WO2016088284A1 - ターゲットアッセンブリ - Google Patents
ターゲットアッセンブリ Download PDFInfo
- Publication number
- WO2016088284A1 WO2016088284A1 PCT/JP2015/003004 JP2015003004W WO2016088284A1 WO 2016088284 A1 WO2016088284 A1 WO 2016088284A1 JP 2015003004 W JP2015003004 W JP 2015003004W WO 2016088284 A1 WO2016088284 A1 WO 2016088284A1
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- WIPO (PCT)
- Prior art keywords
- target
- plate
- backing plate
- insulating plate
- insulating
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
Definitions
- the present invention relates to a target assembly assembled to a sputtering apparatus, and more specifically, includes a target made of an insulator and a backing plate joined to one surface of the target via a bonding material, and the backing plate is an outer periphery of the target.
- the present invention relates to one having an extended portion extending outward from the end.
- an insulating film such as an aluminum oxide film or a magnesium oxide film is formed, and the insulating film is formed with high productivity.
- a sputtering apparatus is used. In such a sputtering apparatus, a target appropriately selected according to the composition of a thin film to be formed and a backing plate for cooling the target during film formation by sputtering are integrated in a vacuum chamber that can be evacuated. The assembled target assembly is detachable.
- the backing plate is formed of a metal such as copper having good thermal conductivity, and has an extending portion that extends outward from the outer peripheral end of the target. Then, the target assembly can be fixed at a predetermined position of the sputtering apparatus by using the extended portion.
- an annular shield plate surrounding the periphery of the target is generally disposed to face the extended portion in order to stabilize discharge.
- Japanese Patent Application No. 2014-163095 Japanese Patent Application No. 2014-163095
- a cathode assembly has been proposed in which an insulating film is formed so as to be roughened from the portion to the side surface of the joining portion and from the extended portion to the side surface of the target.
- the backing plate is reused.
- the target assembly is removed from the sputtering apparatus, the bonding material is removed to separate the used target and the backing plate, and the unused target is bonded to the backing plate using the bonding material.
- the target assembly thus obtained is assembled into a sputtering apparatus.
- the present invention suppresses the occurrence of abnormal discharge between the extended portion of the backing plate and the side surface of the target, and prevents the bonding material that joins the target and the backing plate from exuding to the outside. It is an object of the present invention to provide a target assembly that can be reliably prevented and that the backing plate can be easily reused.
- an insulating target and a backing plate bonded to one surface of the target via a bonding material are provided, and the backing plate extends outward from the outer peripheral end of the target.
- the target assembly of the present invention having an extension portion is an annular shape that surrounds the target with a predetermined gap between the target side surface and covers the target side surface of the extension portion and is detachable from the backing plate.
- An insulation plate is further provided.
- the surface on the target side of the extended portion is covered with the annular insulating plate surrounding the target, and the predetermined gap is present between the insulating plate and the target side surface.
- the bonding material that joins the target and the backing plate can be surely exuded to the outside. Can be prevented.
- the insulating plate is detachable, the used target and the backing plate can be easily separated by removing the insulating plate from the backing plate and removing the bonding material when replacing the target.
- the backing plate since it is not necessary to remove or re-form the insulator film, the backing plate can be easily reused.
- the gap between the target and the shield plate it is preferable to have a ridge projecting toward the target side on the inner peripheral edge of the insulating plate facing the surface.
- the insulating plate is thickened, electrons in the plasma are difficult to pass through the gap between the target side surface and the insulating plate, and the margin of the gap can be increased, while the distance from the insulating plate to the shield plate is increased. It becomes short and an abnormal discharge tends to occur between the two.
- the thickness of the inner peripheral edge of the insulating plate can be increased, the margin of the gap between the target side surface and the insulating plate can be prevented while preventing abnormal discharge between the insulating plate and the shield plate. It is advantageous to be able to widen.
- the insulating plate has a plurality of through holes opened at intervals in the circumferential direction, and a spacer inserted between the inner walls of each of the through holes at intervals. It is preferable to provide a flange portion that is fixed to the backing plate, with the backing plate side of the insulating plate facing up, a flange portion that projects radially outward at the lower end portion of the spacer, and the upper surface of this flange portion is in contact with the lower surface of the insulating plate .
- the insulating plate can move in the radial direction by the gap between the inner wall of the through hole and the spacer. The crack of the plate can be prevented.
- the insulating plate is divided into a plurality of arcuate members, each arcuate member has a first stepped portion protruding from the upper part at one end in the circumferential direction and the upper part extending from the lower part at the other circumferential end. It is preferable that a second stepped portion is provided, and the stepped surfaces of the first stepped portion and the second stepped portion of the adjacent arc-shaped members are brought into contact with each other. According to this, since each arc-shaped member can be moved in the radial direction, the gap between the target side surface and the insulating plate can be adjusted substantially uniformly over the entire circumference of the target.
- FIG. 2 is an arrow view of the target assembly shown in FIG. 1 as viewed from the direction of arrow A.
- Sectional drawing which expands and shows the principal part of a target assembly.
- FIG. 4 is a sectional view taken along line IV-IV in FIG. 2. Sectional drawing which expands and shows the principal part of the modification of a target assembly.
- the sputtering apparatus SM includes a vacuum chamber 1 that defines a processing chamber 1a.
- a vacuum pump P such as a turbo molecular pump or a rotary pump is connected to the bottom of the vacuum chamber 1 through an exhaust pipe so that a vacuum can be drawn up to a predetermined pressure (for example, 10 ⁇ 5 Pa).
- the side wall of the vacuum chamber 1 is connected to a gas source (not shown) and connected to a gas pipe 12 having a mass flow controller 11 interposed therebetween. It can be introduced.
- a cathode unit C is provided on the ceiling of the vacuum chamber 1.
- the cathode unit C includes a target assembly 2 and a magnet unit 3.
- the target assembly 2 is a target 21 made of an insulating material that is appropriately selected according to the composition of the thin film to be deposited, and for cooling the target 21 during deposition by sputtering.
- the metal backing plate 22 is integrated, and the target 21 and the backing plate 22 are joined via a bonding material (not shown) such as indium or tin.
- An output from a high-frequency power source having a known structure as a sputtering power source E is connected to the target 21 and AC power is input during sputtering.
- the magnet unit 3 generates a magnetic field in a space below the sputtering surface 21a of the target 21, captures electrons etc. ionized below the sputtering surface 21a during sputtering, and efficiently ionizes the sputtered particles scattered from the target 21. It has a structure.
- the backing plate 22 has an extended portion 22a that extends outwardly and horizontally from the outer peripheral end of the target 21, and the extended portion 22a is attached to the vacuum chamber 1 via the insulating member I.
- the target assembly 2 is assembled
- a flange portion 4a is provided at the upper end of the side wall portion that stands upward from the outer peripheral edge of the shield plate 4, and the flange portion 4a is fixed to the inner surface of the upper wall of the vacuum chamber 1 so that the shield plate 4 is grounded. Has been.
- the shield plate 4 may be floated.
- a joining portion 22b to which the target 21 of the backing plate 22 is joined is projected downward with respect to the extending portion 22a.
- the protruding amount that is, the length from the lower surface of the joining portion 22b to the lower surface of the extending portion 22a is adjusted within a range of 0.5 to 10 mm.
- a gap d4 of, for example, 0.5 to 2 mm is usually provided between the shield plate 4 and the target 21 in order to stabilize the discharge.
- a gap d4 of, for example, 0.5 to 2 mm is usually provided between the shield plate 4 and the target 21 in order to stabilize the discharge.
- the target assembly 2 of the present embodiment surrounds the periphery of the target 21 with a predetermined gap d1 between the side surface of the target 21 and covers the surface of the extended portion 22a on the target 21 side.
- an annular insulating plate 23 that is detachable.
- the insulating plate 23 can be made of an insulating material such as aluminum oxide, and the thickness t1 of the insulating plate 23 is set so that the lower surface of the insulating plate 23 is less than the normal thickness of 2 to 16 mm. It can be set to a range that is not located below the surface (lower surface) of the target 21, for example, a range of 1 mm to 15 mm. However, as shown in FIG.
- the plate thickness t1 can be set to 15 mm or more.
- the insulating plate 23 has a protrusion 23 a that protrudes toward the target 21 at the inner peripheral edge facing the gap between the target 21 and the shield plate 4.
- the plate thickness t2 of the inner peripheral edge portion of the insulating plate 23 including the protrusions 23a can be set in the range of 1.5 mm to 15.5 mm, for example.
- the thickness of the target 21 is relatively thin, the creepage distance from the backing plate 22 to the space where the plasma exists cannot be secured, so the effect of providing the protrusions 23a is enhanced.
- the gap d4 between the shield plate 4 and the target 21 is widened, the protrusion 23a can be formed larger (higher), but the plasma shielding effect due to the installation of the shield plate 4 with the ground potential is lost. Therefore, the plasma density in the vicinity of the gap between the insulating plate 23 and the target 21 is increased, and the ridges 23a are sputtered in the same manner as the target 21 and cause contamination.
- the gap d4 is preferably set in the range of 0.5 mm to 6 mm, more preferably in the range of 0.5 mm to 3.5 mm, and in the range of 1.5 mm to 3.5 mm. Is more preferable.
- the tip (lower end) of the ridge 23 a is preferably located above the lower surface of the shield plate 4, more preferably located between the upper surface and the lower surface of the shield plate 4, and from the upper surface of the shield plate 4. Is also preferably located above.
- the insulating plate 23 has a plurality of (six in FIG. 2) through-holes 23b opened at intervals in the circumferential direction, and the interval d2 is provided between each through-hole 23b and the inner wall surface.
- a spacer 24 is inserted into the hole 23 b, and the insulating plate 23 is fixed to the backing plate 22 through the spacer 24 with screws 25. According to this, since the insulating plate 23 can move in the radial direction by the distance d2, even if the target 21 extends in the radial direction by the radiant heat from the plasma and presses the insulating plate 23, the insulating plate 23 is not cracked. Can be prevented.
- the spacer 24 has a flange portion 24a projecting radially outward at a lower end portion, and the insulating plate 23 is pressed against the backing plate 22 by bringing the upper surface of the flange portion 24a into contact with the lower surface of the insulating plate 23. Exposure of the backing plate 22 is prevented.
- the insulating plate 23 may be integrally formed. However, as shown in FIGS. 2 and 4, it is preferable that the insulating plate 23 is divided into a plurality of (three in FIG. 2) arcuate members 230. .
- Each arcuate member 230 is provided with a first step 23c projecting at the lower end from the upper portion at one end in the circumferential direction and a second step portion 23d projecting at the other end in the circumferential direction from the lower portion.
- the step surfaces of the first step portion 23c and the second step portion 23d of the arc-shaped members 230, 230 are brought into contact with each other.
- each arc-shaped member 230 can be independently moved in the radial direction, and as a result, the gap d1 between the side surface of the target 21 and the insulating plate 23 is adjusted substantially uniformly over the entire circumference of the target 21. be able to.
- the stage 5 is disposed at the bottom of the vacuum chamber 1 so as to face the sputter surface 21a of the target 21, and the substrate W is positioned and held with its film-forming surface facing upward.
- the sputtering apparatus SM has known control means including a microcomputer, a sequencer, etc., and the control means controls the operation of the power source E, the operation of the mass flow controller 11, the operation of the vacuum pump P, and the like. It is supposed to be.
- the aluminum oxide target 21 is bonded to the bonding portion 22b of the backing plate 22 via a bonding material.
- Indium can be used as the bonding material, and a known method can be used as the bonding method.
- the surface of the extended portion 22a on the target 21 side is covered with an insulating plate 23, and screwed to the backing plate 22 via a spacer 24 provided in a through hole 23b of the insulating plate 23.
- the target assembly 2 manufactured in this way is assembled to the sputtering apparatus SM.
- the gap S1 between the side surface of the target 21 and the insulating plate 23 is substantially uniform over the entire circumference of the target 21. Can be adjusted.
- a method of forming an aluminum oxide film on the surface of the substrate W using the sputtering apparatus SM with the target assembly 2 assembled will be described.
- the vacuum exhaust means P is operated to evacuate the processing chamber 1a to a predetermined degree of vacuum (for example, 1 ⁇ 10 ⁇ 5 Pa).
- a predetermined degree of vacuum for example, 1 ⁇ 10 ⁇ 5 Pa.
- the mass flow controller 11 is controlled to introduce argon gas at a predetermined flow rate (at this time, the pressure in the vacuum processing chamber 1a is in the range of 0.01 to 30 Pa).
- AC power is supplied from the sputtering power source E to the target 21 to form plasma in the vacuum chamber 1.
- the sputtering surface 21a of the target 21 is sputtered, and the sputtered particles scattered are adhered and deposited on the surface of the substrate W, whereby an aluminum oxide film is formed.
- the present embodiment even if there is a gap between the target 21 and the shield plate 4, the surface on the target 21 side of the extended portion 22 a of the backing plate 22 is covered with the insulating plate 23, thereby Electrons are prevented from being charged in the extended portion 22a, and abnormal discharge between the backing plate 22 and the target 21 can be suppressed. As a result, a bonding material that joins the target 21 and the backing plate 22 Can be surely prevented. Moreover, since the insulating plate 23 is detachable, when the target 21 is replaced, the used target 21 and the backing plate 22 can be easily separated by removing the insulating plate 23 from the backing plate 22 and removing the bonding material B. In addition, it is not necessary to remove or re-form the insulator film as in the previous application, and therefore, the backing plate 22 can be easily reused.
- the thickness t1 of the insulating plate 23 is increased, electrons in the plasma are difficult to pass through the gap d1 between the side surface of the target 21 and the insulating plate 23, and the margin of the gap d1 can be increased.
- the distance d3 to the plate 4 is shortened, and abnormal discharge is likely to occur between them.
- the thickness t2 of the inner peripheral edge portion of the insulating plate 23 can be increased without shortening the distance d3, so that the gap between the insulating plate 23 and the shield plate 4 can be increased. This is advantageous in that it is possible to widen the margin of the gap d1 while preventing the occurrence of abnormal discharge.
- the insulating plate 23 is divided into a plurality of arc-shaped members 230, and the first stepped portion 23 c with the lower part protruding from the upper part at one circumferential direction end of each arc-shaped member 230, and the lower part at the other circumferential end.
- each arc-shaped member 230 can be independently moved in the radial direction, the gap d1 between the side surface of the target 21 and the insulating plate 23 can be adjusted substantially uniformly over the entire circumference of the target 21. Is advantageous.
- the present invention is not limited to the above.
- aluminum oxide has been described as an example of the material of the target 21 and the insulating plate 23, the present invention is not limited to this, and other insulators such as magnesium oxide can be selected as appropriate, and the materials of the target 21 and the insulating plate 23 are different. May be.
- the insulating plate 23 in addition to a plate made of only an insulator, a plate of a base material such as metal covered with an insulator film by a thermal spraying method or the like can be used.
- the bonding portion between the target 21 and the bonding portion 22b. are formed on the inner peripheral surface of the insulating plate 23 so that a predetermined gap exists between the recesses 21b and 22c.
- the labyrinth structure is advantageous because electrons in the plasma are more difficult to reach the extended portion 22a.
- the following experiment was performed using the sputtering apparatus SM.
- a ⁇ 200 mm Si substrate is used as the substrate W
- a ⁇ 300 mm aluminum oxide target 21 and a copper backing plate 22 are joined as indium via an indium
- the plate thickness t1 is 1.5 mm.
- the extending portion 22a is covered with an insulating plate 23 having a thickness t2 of 2.3 mm.
- the film forming conditions are as follows: argon gas flow rate: 29 sccm (pressure in the processing chamber 1a: 0.15 Pa), input power to the target 21: 13.56 MHz, 4000 W (Vpp: 2300 V), and the target 21 and the insulating plate 23
- the gaps d1 were adjusted to 0.15 mm, 0.2 mm, 0.25 mm, and 0.3 mm to form films, respectively.
- Vdc the charging potential of the backing plate 22 due to electrons flowing into the backing plate 22
- SM Sputtering device
- 2 Target assembly, 21 ... Target made of insulating material, 22 ... Backing plate, 22a ... Extension part, 23 ... Insulating plate, 23a ... Projection, 23b ... Through hole, 23c ... First step part , 23d: second stepped portion, 24: spacer, 24a: flange portion, 230: arc-shaped member, 4: shield plate.
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Abstract
Description
Claims (4)
- 絶縁物製のターゲットと、このターゲットの一方の面にボンディング材を介して接合されるバッキングプレートとを備え、バッキングプレートがターゲットの外周端より外方に延出した延出部分を有するターゲットアッセンブリにおいて、
ターゲット側面との間に所定の隙間を存してターゲットの周囲を囲い、延出部分のターゲット側の面を覆う、バッキングプレートに着脱自在な環状の絶縁プレートを更に備えることを特徴とするターゲットアッセンブリ。 - 請求項1記載のターゲットアッセンブリであって、スパッタリング装置への組付状態にてターゲット側面との間に所定の隙間を存してターゲットの周囲を囲う環状のシールド板が配置されるものにおいて、
ターゲットとシールド板との間の隙間を臨む絶縁プレートの内周縁部に、ターゲット側に向けて凸設させた突条を有することを特徴とするターゲットアッセンブリ。 - 絶縁プレートは、周方向に間隔を存して開設された複数の透孔を有し、各透孔の内壁との間に間隔を存して透孔に内挿されるスペーサを介してバッキングプレートに固定され、絶縁プレートのバッキングプレート側を上とし、スペーサの下端部に径方向外側に張り出すフランジ部を設け、このフランジ部の上面を絶縁プレートの下面に当接させることを特徴とする請求項1又は2記載のターゲットアッセンブリ。
- 絶縁プレートは複数の円弧状部材に分割され、各円弧状部材の周方向一端に上部よりも下部が張り出す第1段差部を有すると共に周方向他端に下部よりも上部が張り出す第2段差部を設け、隣接する円弧状部材の第1段差部と第2段差部の段差面を相互に当接させることを特徴とする請求項3記載のターゲットアッセンブリ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2016562198A JP6359118B2 (ja) | 2014-12-03 | 2015-06-16 | ターゲットアッセンブリ |
KR1020177018003A KR101977819B1 (ko) | 2014-12-03 | 2015-06-16 | 타겟 어셈블리 |
US15/527,754 US10435783B2 (en) | 2014-12-03 | 2015-06-16 | Target assembly |
SG11201704051SA SG11201704051SA (en) | 2014-12-03 | 2015-06-16 | Target assembly |
CN201580065926.1A CN107002229B (zh) | 2014-12-03 | 2015-06-16 | 靶组件 |
Applications Claiming Priority (2)
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JP2014244802 | 2014-12-03 | ||
JP2014-244802 | 2014-12-03 |
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WO2016088284A1 true WO2016088284A1 (ja) | 2016-06-09 |
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PCT/JP2015/003004 WO2016088284A1 (ja) | 2014-12-03 | 2015-06-16 | ターゲットアッセンブリ |
Country Status (7)
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US (1) | US10435783B2 (ja) |
JP (1) | JP6359118B2 (ja) |
KR (1) | KR101977819B1 (ja) |
CN (1) | CN107002229B (ja) |
SG (1) | SG11201704051SA (ja) |
TW (1) | TWI641710B (ja) |
WO (1) | WO2016088284A1 (ja) |
Cited By (2)
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---|---|---|---|---|
JP2022518037A (ja) * | 2019-01-25 | 2022-03-11 | アプライド マテリアルズ インコーポレイテッド | 物理的気相堆積ターゲットアセンブリ |
JP7510457B2 (ja) | 2022-04-06 | 2024-07-03 | 株式会社アルバック | プラズマ処理装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108578913B (zh) * | 2018-04-20 | 2021-01-01 | 上海联影医疗科技股份有限公司 | 一种x射线靶组件及放疗设备 |
CN116940705B (zh) * | 2021-07-16 | 2024-03-08 | 株式会社爱发科 | 成膜方法和成膜装置 |
DE102022000936A1 (de) * | 2022-03-17 | 2023-09-21 | Singulus Technologies Aktiengesellschaft | Beschichtungsmodul mit verbesserter Kathodenanordnung |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57194254A (en) * | 1981-05-25 | 1982-11-29 | Ulvac Corp | Cathode for insulator target in rf sputtering |
JPS60197873A (ja) * | 1984-03-19 | 1985-10-07 | Ulvac Corp | スパツタリング装置における絶縁物タ−ゲツト用ア−スシ−ルド装置 |
JPH11504986A (ja) * | 1995-05-11 | 1999-05-11 | マテリアルズ リサーチ コーポレーション | 冷却液を隔離したスパッタリング装置及びそのスパッタリングターゲット |
JP2013129871A (ja) * | 2011-12-21 | 2013-07-04 | Sumitomo Metal Mining Co Ltd | マグネトロンスパッタリングカソード及びこれを備えたスパッタリング装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW332222B (en) | 1990-10-31 | 1998-05-21 | Materials Res Corporation | Sputtering apparatus with isolated coolant and sputtering target therefor the invention relates to a replaceable sputtering target device comprising a round target unit, a recessed rim having an annular rim, an annular rim rear face, tension members and annular waterproof surface. |
US6689254B1 (en) * | 1990-10-31 | 2004-02-10 | Tokyo Electron Limited | Sputtering apparatus with isolated coolant and sputtering target therefor |
JP4215232B2 (ja) * | 2002-02-01 | 2009-01-28 | キヤノンアネルバ株式会社 | マグネトロンカソード及びそれを用いたスパッタリング装置 |
AU2003284294A1 (en) | 2002-10-21 | 2004-05-13 | Cabot Corporation | Method of forming a sputtering target assembly and assembly made therefrom |
KR100972812B1 (ko) * | 2004-03-24 | 2010-07-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 선택가능한 듀얼 포지션 마그네트론 |
CN201068469Y (zh) * | 2007-05-15 | 2008-06-04 | 北京京东方光电科技有限公司 | 可延长靶材使用寿命的平面磁控溅射靶 |
JP5414340B2 (ja) * | 2009-04-24 | 2014-02-12 | 株式会社アルバック | スパッタリング方法 |
CN102906302B (zh) | 2010-06-03 | 2015-01-28 | 株式会社爱发科 | 溅射成膜装置 |
US9249500B2 (en) | 2013-02-07 | 2016-02-02 | Applied Materials, Inc. | PVD RF DC open/closed loop selectable magnetron |
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2015
- 2015-06-16 WO PCT/JP2015/003004 patent/WO2016088284A1/ja active Application Filing
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57194254A (en) * | 1981-05-25 | 1982-11-29 | Ulvac Corp | Cathode for insulator target in rf sputtering |
JPS60197873A (ja) * | 1984-03-19 | 1985-10-07 | Ulvac Corp | スパツタリング装置における絶縁物タ−ゲツト用ア−スシ−ルド装置 |
JPH11504986A (ja) * | 1995-05-11 | 1999-05-11 | マテリアルズ リサーチ コーポレーション | 冷却液を隔離したスパッタリング装置及びそのスパッタリングターゲット |
JP2013129871A (ja) * | 2011-12-21 | 2013-07-04 | Sumitomo Metal Mining Co Ltd | マグネトロンスパッタリングカソード及びこれを備えたスパッタリング装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022518037A (ja) * | 2019-01-25 | 2022-03-11 | アプライド マテリアルズ インコーポレイテッド | 物理的気相堆積ターゲットアセンブリ |
JP7365417B2 (ja) | 2019-01-25 | 2023-10-19 | アプライド マテリアルズ インコーポレイテッド | 物理的気相堆積ターゲットアセンブリ |
JP7510457B2 (ja) | 2022-04-06 | 2024-07-03 | 株式会社アルバック | プラズマ処理装置 |
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KR101977819B1 (ko) | 2019-05-13 |
KR20170089918A (ko) | 2017-08-04 |
SG11201704051SA (en) | 2017-06-29 |
TW201621072A (zh) | 2016-06-16 |
JP6359118B2 (ja) | 2018-07-18 |
CN107002229B (zh) | 2019-05-07 |
JPWO2016088284A1 (ja) | 2017-08-10 |
TWI641710B (zh) | 2018-11-21 |
CN107002229A (zh) | 2017-08-01 |
US20170268097A1 (en) | 2017-09-21 |
US10435783B2 (en) | 2019-10-08 |
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