WO2016056562A1 - Iridium complex, organic electroluminescence material, organic electroluminescence element, display device, and illumination device - Google Patents
Iridium complex, organic electroluminescence material, organic electroluminescence element, display device, and illumination device Download PDFInfo
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- WO2016056562A1 WO2016056562A1 PCT/JP2015/078371 JP2015078371W WO2016056562A1 WO 2016056562 A1 WO2016056562 A1 WO 2016056562A1 JP 2015078371 W JP2015078371 W JP 2015078371W WO 2016056562 A1 WO2016056562 A1 WO 2016056562A1
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- atom
- iridium complex
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- organic
- general formula
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- 229910052741 iridium Inorganic materials 0.000 title claims abstract description 99
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 239000000463 material Substances 0.000 title claims abstract description 56
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 18
- 238000005286 illumination Methods 0.000 title abstract description 8
- 239000003446 ligand Substances 0.000 claims abstract description 52
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- 239000001257 hydrogen Substances 0.000 claims abstract description 31
- 125000003118 aryl group Chemical group 0.000 claims abstract description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 66
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 49
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims description 39
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- 125000004437 phosphorous atom Chemical group 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 19
- 125000001424 substituent group Chemical group 0.000 claims description 15
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 12
- 125000000623 heterocyclic group Chemical group 0.000 claims description 12
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- 125000006575 electron-withdrawing group Chemical group 0.000 claims description 6
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
Definitions
- the present invention relates to an iridium complex, an organic electroluminescence material using the iridium complex, an organic electroluminescence element, and a display device and an illumination device provided with the organic electroluminescence element. More specifically, the present invention relates to an iridium complex having improved luminous efficiency and durability.
- An organic electroluminescence element (hereinafter also referred to as an organic EL element) has a configuration in which a light emitting layer containing a light emitting compound is sandwiched between a cathode and an anode, and is injected from the anode by applying an electric field.
- a light emitting device that utilizes excitons (excitons) by recombining electrons injected from holes and cathodes in the light emitting layer, and light emission (fluorescence / phosphorescence) when the excitons are deactivated It is.
- An organic EL element is an all-solid-state element composed of an organic material film having a thickness of only a submicron between electrodes, and can emit light at a voltage of about several volts to several tens of volts. Therefore, it is expected to be used for next-generation flat display and lighting.
- organic EL elements As for the development of organic EL elements for practical application, Princeton University has reported on organic EL elements that use phosphorescence from excited triplets, and since then, research on materials that exhibit phosphorescence at room temperature has become active. It is coming. In addition, organic EL elements that utilize phosphorescence emission can in principle achieve a light emission efficiency that is approximately four times that of organic EL elements that utilize fluorescence emission. Research and development of device layer configurations and electrodes are performed all over the world. For example, many compounds have been studied focusing on heavy metal complexes such as iridium complexes. As described above, the phosphorescence emission method is a method having a very high potential.
- an organic EL element using phosphorescence emission is greatly different from an organic EL element using fluorescence emission, and the position of the emission center is controlled.
- the method, particularly how to recombine within the light emitting layer and how to stably emit light, is an important technical issue in improving the efficiency and lifetime of the device.
- the luminous efficiency is determined by the ratio of the radiation speed that transitions with light emission to the non-radiative transition that transitions with heat. It is known that there is a close connection between the non-radiative transition and the structural change of the phosphorescent compound. That is, when a large structural change occurs, the transition occurs with heat, and the light emission efficiency decreases (for example, see Non-Patent Document 1).
- the phosphorescent compound is composed of a transition metal and a ligand.
- a ligand for example, a compound in which an aromatic heterocycle and an aromatic ring (or aromatic heterocycle) are connected by a single bond (hereinafter, also referred to as a biaryl-type ligand) is often used. It is considered that the main cause of the increase in transition is a structural change of the biaryl type ligand. Specifically, the aromatic ring and aromatic heterocycle (or two aromatic heterocycles) constituting the biaryl-type ligand coordinated with the transition metal are bonded with a single bond, Structural changes occur and non-radiative transitions increase.
- the present invention has been made in view of the above-described problems and circumstances, and the problem to be solved is an iridium complex with improved luminous efficiency and durability, an organic electroluminescent material using the iridium complex, an organic electroluminescent element, and the organic It is to provide a display device and a lighting device provided with an electroluminescence element.
- the present inventor is that the bidentate ligand of the iridium complex has a hydrogen bond in the ligand and immobilizes the structure in the process of examining the cause of the above-mentioned problem.
- the present invention has been achieved. That is, the said subject which concerns on this invention is solved by the following means.
- An iridium complex having a bidentate ligand containing an aromatic heterocycle The bidentate ligand is a ligand in which the aromatic heterocycle and another aromatic heterocycle or aromatic ring are bonded by a single bond, and has a hydrogen bond in the ligand.
- a 1 and A 2 each represent an aromatic hydrocarbon ring or an aromatic heterocyclic ring.
- a 3 represents an aromatic heterocyclic ring.
- X 1 , X 5 , X 1a and X 5a represents a nitrogen atom or a carbon atom
- X 2 to X 4 each represents a nitrogen atom, a carbon atom, an oxygen atom, or a sulfur atom
- X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom
- Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group
- n represents 0 or 1
- l represents Represents 1 to 3.
- m represents 0 to 2.
- l + m 3)
- the iridium complex according to any one of items 1 to 3, wherein the iridium complex has a partial structure represented by the following general formula (2).
- a 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring.
- a 3 represents an aromatic heterocyclic ring containing X 1a and X 5a.
- a 4 represents X 6 .
- X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom
- X 2 to X 4 represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom, respectively.
- X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom
- X 7 and X 8 represent CRc and N
- Rc represents a hydrogen atom or a substituent
- ns represents 0 or 1 represents 1.
- l represents 1 to 3.
- m represents 0 to 2.
- l + m 3.
- the iridium complex according to any one of items 1 to 3, wherein the iridium complex has a partial structure represented by the following general formula (3).
- a 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring.
- a 3 represents an aromatic heterocyclic ring.
- X 1 , X 5 , X 1a and X 5a are each represented by X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom, or a sulfur atom
- X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, or a silicon atom.
- Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group
- R 1 represents an electron withdrawing group
- n is 0 or 1
- L represents 1 to 3.
- m represents 0 to 2.
- l + m 3.
- a 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring.
- a 3 represents an aromatic heterocyclic ring.
- X 1 , X 5 , X 1a and X 5a are each represented by X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom, or a sulfur atom, and
- X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, or a silicon atom.
- Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group
- R 2 represents an electron donating group
- n is 0 or 1
- L represents 1 to 3.
- m represents 0 to 2.
- l + m 3.
- iridium complex according to any one of items 1 to 3, wherein the iridium complex has a partial structure represented by the following general formula (5).
- V represents a trivalent linking group. It is linked to L 1 , L 2 and L 3 by a covalent bond.
- L 1 to L 3 are each represented by the following general formula (6).
- X 1 represents a nitrogen atom or a carbon atom.
- X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom, or a sulfur atom.
- X 6 represents an oxygen atom
- Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group
- n is 0 or 1 represents *. * Represents a binding site to V.
- An organic electroluminescent material comprising the iridium complex according to any one of items 1 to 10.
- An organic electroluminescence device having at least a light emitting layer between an anode and a cathode, The said light emitting layer contains the organic electroluminescent material of 11th term
- a display device comprising the organic electroluminescence element according to item 12.
- An illuminating device comprising the organic electroluminescence element according to item 12.
- an iridium complex with improved luminous efficiency and durability an organic electroluminescent material using the iridium complex, an organic electroluminescent element, and a display device and an illumination device including the organic electroluminescent element. be able to.
- the expression mechanism or action mechanism of the effect of the present invention is not clear, but is presumed as follows.
- the overall structure of the iridium complex (hereinafter also referred to as an Ir complex) can be changed. It was possible to suppress the fluctuation in the film constituting the light emitting layer, and to suppress the association / aggregation of the dopants. As a result, the non-radiative transition can be reduced, the light-emitting property of the organic EL element using the iridium complex is improved, and it is presumed that the voltage increase during driving can be suppressed.
- the iridium complex used for an organic EL element it is common to make it react with a ligand using iridium chloride. In this reaction, hydrochloric acid is generated as a by-product. Therefore, when the ligand contains, for example, imidazole, if H is present at the N-position of imidazole, charge exchange occurs between H and Cl, such as formation of hydrochloride. Therefore, it is difficult to synthesize an Ir complex unless some substituent such as a methyl group is introduced at the N position. Therefore, even if H is present at the N position, it was found that by introducing an intramolecular hydrogen bond in the ligand, exchange of charge with hydrochloric acid as a reaction by-product is eliminated, and an Ir complex can be produced. .
- the iridium complex of the present invention is an iridium complex having a bidentate ligand containing an aromatic heterocycle, wherein the bidentate ligand is the aromatic heterocycle and another aromatic heterocycle or aromatic ring. Is a ligand bonded by a single bond, and has a hydrogen bond in the ligand. This feature is a technical feature common to the inventions according to claims 1 to 14.
- the dissociation energy of the hydrogen atom forming the hydrogen bond is preferably 390 kJ / mol or less because it is a hydrogen bond that can suppress the structural change of the ligand.
- the hydrogen atom forming the hydrogen bond is a nitrogen atom, an oxygen atom, a phosphorus atom, or a silicon atom because a strong hydrogen bond is formed.
- the iridium complex has a partial structure represented by the general formula (1) from the viewpoint of manifesting the effect of the present invention.
- the ring formed by X 1 to X 5 in the iridium complex is preferably an imidazole ring or a triazole ring. Thereby, the radiation speed can be increased.
- a 1 in the iridium complex is preferably a benzene ring. Thereby, the radiation speed can be increased.
- the iridium complex has a partial structure represented by the general formula (2) from the viewpoint of manifesting the effect of the present invention.
- the iridium complex has a partial structure represented by the general formula (3) from the viewpoint of manifesting the effect of the present invention.
- the iridium complex has a partial structure represented by the general formula (4) from the viewpoint of manifesting the effect of the present invention.
- the iridium complex has a partial structure represented by the general formula (5) from the viewpoint of manifesting the effect of the present invention.
- the organic electroluminescent material of the present invention is characterized by containing the iridium complex of the present invention. Thereby, an organic EL material with improved luminous efficiency and durability can be obtained.
- the organic electroluminescent device of the present invention is an organic electroluminescent device having at least a light emitting layer between an anode and a cathode, and the light emitting layer contains the organic electroluminescent material of the present invention. To do. Thereby, the organic EL element which improved luminous efficiency and durability can be obtained.
- the organic electroluminescence element of the present invention can be suitably provided in a display device. Thereby, luminous efficiency and durability can be improved.
- the organic electroluminescence element of the present invention can be suitably provided in a lighting device. Thereby, luminous efficiency and durability can be improved.
- the luminous efficiency of the phosphorescent compound is determined by the ratio of the radiative transition that transitions with light emission to the non-radiative transition that transitions with heat. It is known that the non-radiative transition and the structural change of the phosphorescent compound have a close connection, and when a large structural change occurs, the transition occurs with heat and the luminous efficiency is lowered.
- the phosphorescent compound is composed of a transition metal and a ligand.
- a ligand for example, a biaryl type ligand in which an aromatic heterocycle and an aromatic ring (or an aromatic heterocycle) are connected by a single bond is often used, and the main cause of increasing non-radiative transition is biaryl.
- the “biaryl type ligand” is not a compound in which two aromatic rings are connected by a single bond, but a compound in which an aromatic ring and an aromatic heterocyclic ring are connected by a single bond, It is a compound in which aromatic heterocycles are connected by a single bond, and these aromatic rings and / or aromatic heterocycles may further have a substituent.
- the aromatic ring and aromatic heterocycle (or two aromatic heterocycles) constituting the biaryl-type ligand coordinated with the transition metal are single bonds. Since they are coupled, it is considered that structural change occurs and non-radiative transition increases.
- the means for fixing the structure of the biaryl ligand is a means that can also suppress association and aggregation of dopants that cause concentration quenching and excimer emission.
- the association / aggregation between the dopants may occur immediately after the film formation, but it occurs more prominently when electrolysis or local Joule heat is applied to the light-emitting layer thin film over time.
- the association / aggregation of the dopants with the passage of time changes the state of the film in the light emitting layer, which changes the ease of hole flow and the ease of electron flow. It is necessary to suppress the value from changing and causing a voltage increase during driving.
- the manufacturing method of the iridium complex used for an organic EL element it is common to make it react with a ligand using iridium chloride. In this reaction, hydrochloric acid is generated as a by-product. Therefore, when the ligand contains, for example, an imidazole ring, if H is present at the N-position of the imidazole, charge exchange occurs between H and Cl, such as formation of hydrochloride. Therefore, it is difficult to synthesize an Ir complex unless some substituent such as a methyl group is introduced at the N position.
- the light emitting layer unit may have a non-light emitting intermediate layer between a plurality of light emitting layers, and may have a multi-photon unit configuration in which the intermediate layer is a charge generation layer.
- the charge generating layer ITO (indium tin oxide), IZO (indium zinc oxide), ZnO 2, TiN, ZrN , HfN, TiOx, VOx, CuI, InN, GaN, CuAlO 2, CuGaO 2 , conductive inorganic compound layers such as SrCu 2 O 2 , LaB 6 , RuO 2 , double-layer films such as Au / Bi 2 O 3 , SnO 2 / Ag / SnO 2 , ZnO / Ag / ZnO, Bi 2 Multilayer films such as O 3 / Au / Bi 2 O 3 , TiO 2 / TiN / TiO 2 , TiO 2 / ZrN / TiO 2 , fullerenes such as C 60
- the light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode or the electron transport layer and the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.
- the total thickness of the light emitting layer is not particularly limited, but from the viewpoint of improving the stability of the emission color against the drive current and the uniformity of the film, preventing unnecessary application of high voltage during light emission. It is preferably adjusted in the range of 2 nm to 5 ⁇ m, more preferably adjusted in the range of 2 to 200 nm, particularly preferably in the range of 5 to 100 nm.
- the light emitting layer of the organic EL device of the present invention preferably contains a light emitting dopant (phosphorescent dopant, fluorescent light emitting dopant, etc.) compound and a host compound.
- the luminescent dopant (a luminescent dopant, a dopant compound, and only a dopant) is demonstrated.
- a fluorescent luminescent dopant also referred to as a fluorescent dopant, a fluorescent compound, or a fluorescent luminescent compound
- a phosphorescent dopant also referred to as a phosphorescent dopant, a phosphorescent compound, a phosphorescent compound, or the like.
- a phosphorescent dopant is a compound in which light emission from an excited triplet is observed, specifically a compound that emits phosphorescence at room temperature (25 ° C.), and a phosphorescence quantum yield. Is defined as a compound of 0.01 or more at 25 ° C., but a preferable phosphorescence quantum yield is 0.1 or more.
- the phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence dopant according to the present invention achieves the phosphorescence quantum yield (0.01 or more) in any solvent. That's fine.
- the phosphorescent dopant There are two types of light emission of the phosphorescent dopant in principle. One is the recombination of carriers on the host compound to which carriers are transported to generate the excited state of the luminescent host compound, and this energy is used as the phosphorescent dopant. It is an energy transfer type in which light emission from a phosphorescent dopant is obtained by moving to. The other is a carrier trap type in which a phosphorescent dopant becomes a carrier trap, and carrier recombination occurs on the phosphorescent dopant, and light emission from the phosphorescent dopant is obtained. In any case, it is a condition that the excited state energy of the phosphorescent dopant is lower than the excited state energy of the host compound.
- the iridium complex of the present invention has a bidentate ligand containing an aromatic heterocyclic ring.
- the bidentate ligand is a ligand in which the aromatic heterocycle and another aromatic heterocycle or an aromatic ring are bonded by a single bond, and has a hydrogen bond in the ligand.
- the hydrogen bond is a non-covalent bond formed by a hydrogen atom covalently bonded to an atom having a large electronegativity with a lone electron pair of a nitrogen atom, an oxygen atom or a sulfur atom located at a predetermined distance and angle. It is an attractive interaction of sex.
- an atom covalently bonded to a hydrogen atom forming a hydrogen bond can be expressed as X—H. Assume that hydrogen bonds are formed when the distance between them is in the range of 1.4 to 2.5 mm and the angle formed by XH... Y is in the range of 110 to 125 °.
- the hydrogen bond formed in the ligand of the iridium complex of this invention is Gaussian98 (Gaussian98, Revision A.11.4, MJ Frisch, Software for molecular orbital calculation made by Gaussian, USA). et al, Gaussian, Inc., Pittsburgh PA, 2002.)
- B3LYP / 6-31G * as a keyword as a keyword, the structure-optimized iridium complex is hydrogenated based on distance and angle. Judgment was made.
- an atom hydrogen-bonded with the hydrogen atom forming the hydrogen bond is a nitrogen atom, an oxygen atom, a phosphorus atom, or a silicon atom because a strong hydrogen bond is formed.
- the structure change can be suppressed by having a hydrogen bond in the ligand of the iridium complex, the site involved in light emission can be immobilized, and the non-radiative transition is suppressed. can do.
- the iridium complex of the present invention preferably further has interligand hydrogen bonds, intermolecular hydrogen bonds, and other interactions.
- the iridium complex of the present invention preferably has a partial structure represented by the following general formula (1).
- a 1 and A 2 each represent an aromatic hydrocarbon ring or an aromatic heterocyclic ring.
- a 3 represents an aromatic heterocyclic ring.
- X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom.
- X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom.
- X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom.
- Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group.
- n represents 0 or 1.
- l represents 1 to 3.
- m represents 0-2.
- l + m 3.
- the ring formed by X 1 to X 5 in the iridium complex is preferably an imidazole ring or a triazole ring.
- a 1 in the iridium complex is preferably a benzene ring.
- the iridium complex of this invention has the partial structure represented by following General formula (2).
- a 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring.
- a 3 represents an aromatic heterocyclic ring containing X 1a and X 5a .
- a 4 represents an aromatic heterocyclic ring containing X 6 .
- X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom.
- X 2 to X 4 represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom.
- X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom.
- X 7 and X 8 represent CRc and N, and Rc represents a hydrogen atom or a substituent.
- ns represents 0 or 1.
- l represents 1 to 3.
- m represents 0-2.
- l + m 3.
- the iridium complex of this invention has the partial structure represented by following General formula (3).
- a 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring.
- a 3 represents an aromatic heterocyclic ring.
- X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom.
- X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom.
- X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom.
- Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group.
- R 1 represents an electron withdrawing group.
- n 0 or 1.
- l 1 to 3.
- m 0-2.
- l + m 3.
- an alkoxycarbonyl group in addition to the electron withdrawing groups included in the structural formulas of the iridium complexes D-1 to D-38 shown in the following specific examples, an alkoxycarbonyl group, an aryloxycarbonyl group, a sulfamoyl group, an acyl group Amide groups, carbamoyl groups, sulfinyl groups, alkylsulfonyl groups, arylsulfonyl groups, heteroarylsulfonyl groups, cyano groups, nitro groups, and the like are also preferably used.
- the iridium complex of this invention has the partial structure represented by following General formula (4).
- a 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring.
- a 3 represents an aromatic heterocyclic ring.
- X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom.
- X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom.
- X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom.
- Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group.
- R 2 represents an electron donating group.
- n 0 or 1.
- l 1 to 3.
- m 0-2.
- l + m 3.
- an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylthio group, Groups such as cycloalkylthio group, arylthio group, amino group, hydroxy group, mercapto group and silyl group are also preferably used.
- the iridium complex of this invention has a structure represented by following General formula (5).
- V represents a trivalent linking group. It is linked to L 1 , L 2 and L 3 by a covalent bond.
- L 1 to L 3 are each a partial structure represented by the following general formula (6).
- X 1 represents a nitrogen atom or a carbon atom.
- X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom.
- X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom.
- Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group.
- n represents 0 or 1. * Represents a binding site to V.
- the partial structure represented by the general formulas (1) to (6) and the aromatic ring contained in the structure may further have a substituent, and the substituent is bonded to another group to form a condensed ring. It may be formed.
- substituents include an alkyl group (for example, a methyl group, an ethyl group, a trifluoromethyl group, and an isopropyl group), an alkoxy group (for example, a methoxy group and an ethoxy group), and a halogen atom (for example, a fluorine atom).
- Nitro group dialkylamino group (for example, dimethylamino group), trialkylsilyl group (for example, trimethylsilyl group), triarylsilyl group (for example, triphenylsilyl group), triheteroarylsilyl group (for example, triphenylsilyl group) Pyridylsilyl group etc.), benzyl group, aryl group (eg phenyl group etc.), heteroaryl group (eg pyridyl group, carbazolyl group etc.) and the like.
- dialkylamino group for example, dimethylamino group
- trialkylsilyl group for example, trimethylsilyl group
- triarylsilyl group for example, triphenylsilyl group
- triheteroarylsilyl group for example, triphenylsilyl group
- the iridium complex of the present invention is Gaussian 03 (Gaussian 98, Revision C.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.), which is software for molecular orbital calculation manufactured by Gaussian, USA.
- Gaussian 03 Gaussian 98, Revision C.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.
- B3LYP / 6-31G * as a keyword, structural optimization is performed, and using this optimal structure, 6-311 ++ G (2df, 2p) is used as a keyword to perform one-point calculation, and the dissociation energy of the hydrogen atom is calculated. Asked.
- the dissociation energy of a hydrogen atom that forms a hydrogen bond in the ligand of the iridium complex of the present invention is preferably 390 kJ / mol or less, more preferably 375 kJ / mol or less, and 360 kJ / mol or less. It is particularly preferred. Table 1 shows the calculated dissociation energy.
- the dissociation energy of the hydrogen atom forming the hydrogen bond is 390 kJ / mol or less because the hydrogen bond can suppress the structural change of the ligand.
- Fluorescent dopant examples include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, Examples include perylene dyes, stilbene dyes, polythiophene dyes, rare-earth complex phosphors, and compounds having high fluorescence quantum yields typified by laser dyes.
- the light emitting dopant used in the present invention may be used in combination of a plurality of types of compounds, a combination of phosphorescent dopants having different structures, or a combination of a phosphorescent dopant and a fluorescent dopant.
- the luminescent dopant a conventionally known luminescent dopant may be used in combination with the iridium complex of the present invention.
- the compounds described in International Publication No. 2013/061850 can be preferably used, but the present invention is not limited thereto.
- a host compound (also referred to as a light-emitting host or a light-emitting host compound) that can be used in the present invention has a mass ratio in the layer of 20% or more among the compounds contained in the light-emitting layer, and a room temperature ( 25 ° C.) is defined as a compound having a phosphorescence quantum yield of phosphorescence of less than 0.1.
- the phosphorescence quantum yield is preferably less than 0.01.
- the mass ratio in the layer is 20% or more among the compounds contained in a light emitting layer.
- the host compound that can be used in the present invention is not particularly limited, and compounds conventionally used in organic EL devices can be used.
- a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from being increased in wavelength, and has a high Tg (glass transition temperature) is preferable.
- a conventionally well-known host compound may be used independently, and may be used in combination of multiple types. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient. Moreover, it becomes possible to mix different light emission by using multiple types of the iridium complex of this invention used as the said phosphorescence dopant, and / or a conventionally well-known compound, and, thereby, arbitrary luminescent colors can be obtained.
- the host compound used in the present invention may be a low molecular compound, a high molecular compound having a repeating unit, or a low molecular compound (polymerizable host compound) having a polymerizable group such as a vinyl group or an epoxy group. Of course, one or more of such compounds may be used.
- host compounds include compounds described in the following documents. JP-A-2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, 2002-334786, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645, 2002-338579, 2002-105445 gazette, 2002-343568 gazette, 2002-141173 gazette, 2002-352957 gazette, 2002-203683 gazette, 2002-363227 gazette, 2002-231453 gazette, No. 003-3165, No. 2002-234888, No. 2003-27048, No. 2002-255934, No. 2002-260861, No. 2002-280183, No. 2002-299060, No. 2002. -302516, 2002-305083, 2002-305084, 2002-308837, and the like.
- the electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer.
- the electron transport layer can be provided with a single layer or a plurality of layers.
- the electron transport layer only needs to have a function of transmitting electrons injected from the cathode to the light emitting layer.
- any conventionally known compound may be selected and used in combination. Is possible.
- electron transport materials examples include polycyclic aromatic hydrocarbons such as nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, naphthalene perylene, Heterocyclic tetracarboxylic anhydride, carbodiimide, fluorenylidenemethane derivative, anthraquinodimethane and anthrone derivative, oxadiazole derivative, carboline derivative, or carbon atom of the hydrocarbon ring constituting the carboline ring of the carboline derivative Derivatives having a ring structure in which at least one is substituted with a nitrogen atom, hexaazatriphenylene derivatives, and the like can be mentioned.
- polycyclic aromatic hydrocarbons such as nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, naphthalene perylene, Heterocyclic tetrac
- a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron-withdrawing group can also be used as an electron transport material. It is also possible to use a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain.
- metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metals of these metal complexes are In, Mg, Metal complexes replaced with Cu, Ca, Sn, Ga, or Pb can also be used as the electron transport material.
- metal-free or metal phthalocyanine or those having a terminal substituted with an alkyl group or a sulfonic acid group can be used as the electron transport material.
- An inorganic semiconductor such as n-type-Si and n-type-SiC can also be used as an electron transport material.
- the electron transport layer is made of an electron transport material such as a vacuum deposition method, a wet method (also referred to as a wet process, such as a spin coating method, a casting method, a die coating method, a blade coating method, a roll coating method, an ink jet method, a printing method, or a spraying method.
- the film is preferably formed by thinning by a coating method, curtain coating method, LB method (Langmuir Brodgett method, etc.).
- the thickness of the electron transport layer is not particularly limited, but is usually about 5 to 5000 nm, preferably 5 to 200 nm.
- the electron transport layer may have a single layer structure composed of one or more of the above materials.
- an n-type dopant such as a metal compound such as a metal complex or a metal halide may be doped.
- the compounds described in International Publication No. 2013/061850 can be preferably used. It is not limited to.
- cathode a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used.
- electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like.
- a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred.
- the cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the cathode is preferably several hundred ⁇ / ⁇ or less, and the film thickness is usually selected in the range of 10 nm to 5 ⁇ m, preferably 50 to 200 nm.
- the emission luminance is advantageously improved.
- a transparent or semi-transparent cathode can be produced by producing a conductive transparent material, which will be described later in the description of the anode, after producing the above metal with a thickness of 1 to 20 nm on the cathode.
- a transparent or semi-transparent cathode can be produced by producing a conductive transparent material, which will be described later in the description of the anode, after producing the above metal with a thickness of 1 to 20 nm on the cathode.
- Injection layer electron injection layer (cathode buffer layer), hole injection layer >>
- the injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, exists between the anode and the light emitting layer or the hole transport layer, and between the cathode and the light emitting layer or the electron transport layer. You may let them.
- An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance. “Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) 2), Chapter 2, “Electrode Materials” (pages 123 to 166) in detail, and includes a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).
- anode buffer layer hole injection layer
- anode buffer layer hole injection layer
- copper phthalocyanine is used.
- Examples thereof include a buffer layer, a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) and polythiophene, and an orthometalated complex layer represented by tris (2-phenylpyridine) iridium complex.
- a buffer layer a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) and polythiophene
- an orthometalated complex layer represented by tris (2-phenylpyridine) iridium complex.
- cathode buffer layer (electron injection layer) The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc.
- Metal buffer layer typified by, alkali metal compound buffer layer typified by lithium fluoride and potassium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride and cesium fluoride, typified by aluminum oxide Examples thereof include an oxide buffer layer.
- the buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 ⁇ m, although it depends on the material.
- ⁇ Blocking layer hole blocking layer, electron blocking layer>
- the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)” on page 237. There is a hole blocking (hole blocking) layer.
- the hole blocking layer has a function of an electron transport layer in a broad sense, and is made of a hole blocking material that has a function of transporting electrons and has a remarkably small ability to transport holes. The probability of recombination of electrons and holes can be improved by blocking. Moreover, the structure of the electron carrying layer mentioned above can be used as a hole-blocking layer as needed.
- the hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.
- the hole blocking layer includes a carbazole derivative, a carboline derivative, a diazacarbazole derivative (the diazacarbazole derivative is a nitrogen atom in which any one of carbon atoms constituting the carboline ring is cited as the host compound described above. It is preferable to contain the thing replaced by.
- the electron blocking layer has a function of a hole transport layer in a broad sense, and is made of a material that has a function of transporting holes and has an extremely small ability to transport electrons, and transports electrons while transporting holes. By blocking, the recombination probability of electrons and holes can be improved. Moreover, the structure of the positive hole transport layer mentioned later can be used as an electron blocking layer as needed.
- the thickness of the hole blocking layer and the electron transporting layer according to the present invention is preferably 3 to 100 nm, and more preferably 5 to 30 nm.
- the hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer.
- the hole transport layer can be provided as a single layer or a plurality of layers.
- the hole transport material has any of hole injection or transport and electron barrier properties, and may be either organic or inorganic.
- triazole derivatives for example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, conductive polymer oligomers, particularly thiophene oligomers.
- azatriphenylene derivatives such as those described in JP-T-2003-519432 and JP-A-2006-135145 can also be used as hole transport materials.
- the above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
- aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminoph
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
- JP-A-11-251067, J. Org. Huang et. al. A so-called p-type hole transport material as described in a book (Applied Physics Letters 80 (2002), p. 139) can also be used. In the present invention, these materials are preferably used because a light-emitting element with higher efficiency can be obtained.
- the hole transport layer can be formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. it can.
- the layer thickness of the hole transport layer is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- This hole transport layer may have a single layer structure composed of one or more of the above materials.
- a hole transport layer having a high p property doped with impurities can be used.
- examples thereof include JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like.
- an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used.
- an electrode substance include metals such as Au, and conductive transparent materials such as CuI, ITO, SnO 2 , and ZnO.
- an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used.
- a thin film may be formed by vapor deposition or sputtering of these electrode materials, and a pattern of a desired shape may be formed by photolithography, or when pattern accuracy is not required (about 100 ⁇ m or more) A pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material.
- a wet film forming method such as a printing method or a coating method can also be used.
- the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred ⁇ / ⁇ or less.
- the film thickness depends on the material, it is usually selected in the range of 10 to 1000 nm, preferably 10 to 200 nm.
- the support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention is not particularly limited in the type of glass, plastic, etc., and is transparent. Or opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.
- polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate (TAC), cellulose acetate butyrate, cellulose acetate propionate ( CAP), cellulose esters such as cellulose acetate phthalate, cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylates, Arton (trade name, manufactured by JSR) or Appel (
- the surface of the resin film may be formed with an inorganic film, an organic film, or a hybrid film of both, and the water vapor permeability (25 ⁇ 0.5 ° C.) measured by a method according to JIS K 7129-1992. , And a relative humidity (90 ⁇ 2)%) of 0.01 g / m 2 ⁇ 24 h or less is preferable, and the oxygen permeability measured by a method according to JIS K 7126-1987 is also preferable. It is preferably a high-barrier film having 1 ⁇ 10 ⁇ 3 ml / m 2 ⁇ 24 h ⁇ atm or less and a water vapor permeability of 1 ⁇ 10 ⁇ 5 g / m 2 ⁇ 24 h or less.
- the material for forming the barrier layer may be any material as long as it has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen.
- silicon oxide, silicon dioxide, silicon nitride, or the like can be used.
- the method for forming the barrier layer is not particularly limited.
- a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
- the opaque support substrate include metal plates such as aluminum and stainless steel, films, opaque resin substrates, and ceramic substrates.
- the external extraction yield at room temperature for light emission of the organic EL device of the present invention is preferably 1% or more, and more preferably 5% or more.
- the external extraction quantum yield (%) the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element ⁇ 100.
- a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor may be used in combination.
- the ⁇ max of light emission of the organic EL element is preferably 480 nm or less.
- a device comprising an anode / hole injection layer / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / cathode buffer layer (electron injection layer) / cathode Will be described.
- a desired electrode material for example, a thin film made of an anode material is formed on a suitable substrate so as to have a thickness of 1 ⁇ m or less, preferably 10 to 200 nm, to produce an anode.
- a thin film containing an organic compound such as a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, or a cathode buffer layer, which is an element material, is formed thereon.
- a thin film can be formed by a vacuum deposition method, a wet method (also referred to as a wet process), or the like.
- Wet methods include spin coating, casting, die coating, blade coating, roll coating, ink jet, printing, spray coating, curtain coating, and LB, but precise thin films can be formed.
- a method having a high suitability for a roll-to-roll method such as a die coating method, a roll coating method, an ink jet method, or a spray coating method is preferable. Different film formation methods may be applied for each layer.
- liquid medium for dissolving or dispersing the organic EL material such as a luminescent dopant used in the present invention include, for example, ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, Aromatic hydrocarbons such as toluene, xylene, mesitylene and cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin and dodecane, and organic solvents such as dimethylformamide (DMF) and DMSO can be used.
- a dispersion method it can disperse
- a thin film made of a cathode material is formed thereon so as to have a thickness of 1 ⁇ m or less, preferably in the range of 50 to 200 nm, and a desired organic EL device can be obtained by providing a cathode.
- the order can be reversed, and the cathode, cathode buffer layer, electron transport layer, hole blocking layer, light emitting layer, hole transport layer, hole injection layer, and anode can be formed in this order.
- the organic EL device of the present invention is preferably produced from the hole injection layer to the cathode consistently by a single evacuation, but it may be taken out halfway and subjected to different film forming methods. At that time, it is preferable to perform the work in a dry inert gas atmosphere.
- the sealing member may be disposed so as to cover the display area of the organic EL element, and may be a concave plate shape or a flat plate shape. Further, transparency and electrical insulation are not particularly limited.
- Specific examples include a glass plate, a polymer plate / film, and a metal plate / film.
- the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
- the polymer plate include those formed from polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, polysulfone and the like.
- Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
- a polymer film and a metal film can be preferably used because the element can be thinned.
- the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 ⁇ 10 ⁇ 3 ml / m 2 ⁇ 24 h ⁇ atm or less, and measured by a method according to JIS K 7129-1992.
- the water vapor permeability (25 ⁇ 0.5 ° C., relative humidity (90 ⁇ 2)%) is preferably 1 ⁇ 10 ⁇ 3 g / m 2 ⁇ 24 h or less.
- the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. be able to.
- hot-melt type polyamide, polyester, and polyolefin can be mentioned.
- a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
- an organic EL element may deteriorate by heat processing, what can be adhesively cured from room temperature to 80 ° C. is preferable.
- a desiccant may be dispersed in the adhesive.
- coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print like screen printing.
- the electrode and the organic layer are coated on the outside of the electrode facing the support substrate with the organic layer interposed therebetween, and an inorganic or organic layer is formed in contact with the support substrate to form a sealing film.
- a material for forming the film any material may be used as long as it has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen.
- silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can.
- vacuum deposition method sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma
- a polymerization method a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
- an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil can be injected in the gas phase and liquid phase.
- a vacuum is also possible.
- a hygroscopic compound can also be enclosed inside. Examples of the hygroscopic compound include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate).
- metal halides eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.
- perchloric acids eg perchloric acid Barium, magnesium perchlorate, and the like
- anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
- a protective film or a protective plate may be provided on the outer side of the sealing film on the side facing the support substrate with the organic layer interposed therebetween or the sealing film.
- the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate.
- the same glass plate, polymer plate / film, metal plate / film, etc. used for the sealing can be used, but the polymer film is light and thin. Is preferably used.
- the organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1) and can extract only about 15 to 20% of the light generated in the light emitting layer. Is generally said. This is because light incident on the interface (interface between the transparent substrate and air) at an angle ⁇ greater than the critical angle causes total reflection and cannot be taken out of the device, or between the transparent electrode or light emitting layer and the transparent substrate. This is because the light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the element side surface.
- a method for improving the light extraction efficiency for example, a method of forming irregularities on the surface of the transparent substrate to prevent total reflection at the interface between the transparent substrate and the air (US Pat. No. 4,774,435), condensing on the substrate.
- a method of improving the efficiency by imparting a property Japanese Patent Laid-Open No. 63-314795
- a method of forming a reflective surface on the side surface of the element Japanese Patent Laid-Open No. 1-220394
- Japanese Patent Laid-Open No. 1-220394 Japanese Patent Laid-Open No. 1-220394
- Japanese Patent Laid-Open No. 1-220394 Japanese Patent Laid-Open No. 1-220394
- these methods can be used in combination with the organic EL device of the present invention.
- a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, transparent A method of forming a diffraction grating between any one of the electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
- by combining these means it is possible to obtain an element having higher brightness or durability.
- the low refractive index layer include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less. Further, the thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.
- the method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency.
- This method uses the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction or second-order diffraction.
- Light that cannot be emitted due to total internal reflection, etc. is diffracted by introducing a diffraction grating in any layer or medium (in the transparent substrate or transparent electrode), and the light is emitted outside. I want to take it out.
- the introduced diffraction grating desirably has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. Therefore, the light extraction efficiency does not increase so much. However, by making the refractive index distribution a two-dimensional distribution, light traveling in all directions is diffracted, and light extraction efficiency is increased.
- the position where the diffraction grating is introduced may be in any one of the layers or in the medium (in the transparent substrate or the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.
- the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.
- the arrangement of the diffraction grating is preferably two-dimensionally repeated such as a square lattice, a triangular lattice, or a honeycomb lattice.
- the organic EL device of the present invention is processed on the light extraction side of the substrate, for example, so as to provide a microlens array-like structure, or in combination with a so-called condensing sheet, for example, with respect to a specific direction, for example, the device light emitting surface.
- a specific direction for example, the device light emitting surface.
- the luminance in a specific direction can be increased.
- the microlens array quadrangular pyramids having a side of 30 ⁇ m and an apex angle of 90 degrees are arranged two-dimensionally on the light extraction side of the substrate.
- One side is preferably 10 to 100 ⁇ m. If it becomes smaller than this, the effect of diffraction will generate
- the condensing sheet for example, a sheet that is put into practical use in an LED backlight of a liquid crystal display device can be used.
- a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used.
- the shape of the prism sheet for example, the base material may be formed by forming a ⁇ -shaped stripe having a vertex angle of 90 degrees and a pitch of 50 ⁇ m, or the vertex angle is rounded and the pitch is changed randomly. Other shapes may be used.
- a light diffusing plate and a film with a condensing sheet for example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
- the organic EL element of the present invention can be used as an electronic device, a display device, a display, and various light emitting devices.
- light emitting devices include lighting devices (home lighting, interior lighting), clocks and backlights for liquid crystals, billboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light Although the light source of a sensor etc. are mentioned, It is not limited to this, Especially, it can use effectively for the use as a backlight of a liquid crystal display device, and a light source for illumination.
- patterning may be performed by a metal mask, an ink jet printing method, or the like during film formation, if necessary.
- patterning only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire layer of the element may be patterned.
- a conventionally known method is used. Can do.
- the light emission color of the organic EL device of the present invention and the compound according to the present invention is shown in FIG. 7.16 on page 108 of “New Color Science Handbook” (edited by the Japan Color Society, University of Tokyo Press, 1985). It is determined by the color when the result measured with a total of CS-1000 (manufactured by Konica Minolta Co., Ltd.) is applied to the CIE chromaticity coordinates.
- CS-1000 manufactured by Konica Minolta Co., Ltd.
- the display device of the present invention comprises the organic EL element of the present invention.
- the display device of the present invention may be single color or multicolor, the multicolor display device will be described here.
- a shadow mask is provided only at the time of forming a light emitting layer, and a film can be formed on one surface by vapor deposition, casting, spin coating, ink jet, printing, or the like.
- the method is not limited. However, the vapor deposition method, the ink jet method, the spin coating method, and the printing method are preferable.
- the configuration of the organic EL element provided in the display device is selected from the above-described configuration examples of the organic EL element as necessary.
- the manufacturing method of an organic EL element is as having shown to the one aspect
- the multicolor display device can be used as a display device, a display, and various light emission sources.
- a display device or display full-color display is possible by using three types of organic EL elements of blue, red, and green light emission.
- the display device and display include a television, a personal computer, a mobile device, an AV device, a character broadcast display, and an information display in an automobile.
- the driving method when used as a display device for reproducing moving images may be either a simple matrix (passive matrix) method or an active matrix method.
- Light sources include home lighting, interior lighting, clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, light sources for optical sensors, etc.
- the present invention is not limited to these examples.
- FIG. 1 is a schematic view showing an example of a display device composed of organic EL elements. It is a schematic diagram of a display such as a mobile phone that displays image information by light emission of an organic EL element.
- the display 1 includes a display unit A having a plurality of pixels, a control unit B that performs image scanning of the display unit A based on image information, a wiring unit C that electrically connects the display unit A and the control unit B, and the like.
- the control unit B is electrically connected to the display unit A via the wiring unit C, and sends a scanning signal and an image data signal to each of a plurality of pixels based on image information from the outside. Sequentially emit light according to the image data signal, scan the image, and display the image information on the display unit A.
- FIG. 2 is a schematic diagram of a display device using an active matrix method.
- the display unit A includes a wiring unit C including a plurality of scanning lines 5 and data lines 6, a plurality of pixels 3 and the like on a substrate.
- the main members of the display unit A will be described below.
- FIG. 2 shows a case where the light emitted from the pixel 3 (the emitted light L) is extracted in the white arrow direction (downward).
- the scanning line 5 and the plurality of data lines 6 in the wiring portion are each made of a conductive material, and the scanning lines 5 and the data lines 6 are orthogonal to each other in a grid pattern and are connected to the pixels 3 at the orthogonal positions (details are illustrated Not)
- the pixel 3 receives an image data signal from the data line 6 and emits light according to the received image data.
- Full-color display is possible by appropriately arranging pixels in the red region, the green region, and the blue region on the same substrate.
- FIG. 3 is a schematic diagram showing a pixel circuit.
- the pixel includes an organic EL element 10, a switching transistor 11, a driving transistor 12, a capacitor 13, and the like.
- a full color display can be performed by using red, green, and blue light emitting organic EL elements as the organic EL elements 10 in a plurality of pixels, and juxtaposing them on the same substrate.
- an image data signal is applied from the control unit B to the drain of the switching transistor 11 via the data line 6.
- a scanning signal is applied from the control unit B to the gate of the switching transistor 11 via the scanning line 5
- the driving of the switching transistor 11 is turned on, and the image data signal applied to the drain is supplied to the capacitor 13 and the driving transistor 12. Is transmitted to the gate.
- the capacitor 13 is charged according to the potential of the image data signal, and the drive transistor 12 is turned on.
- the drive transistor 12 has a drain connected to the power supply line 7 and a source connected to the electrode of the organic EL element 10, and the power supply line 7 connects to the organic EL element 10 according to the potential of the image data signal applied to the gate. Current is supplied.
- the driving of the switching transistor 11 is turned off.
- the driving of the driving transistor 12 is kept on and the next scanning signal is applied. Until then, the light emission of the organic EL element 10 continues.
- the driving transistor 12 is driven according to the potential of the next image data signal synchronized with the scanning signal, and the organic EL element 10 emits light.
- the organic EL element 10 emits light by the switching transistor 11 and the drive transistor 12 that are active elements for the organic EL element 10 of each of the plurality of pixels, and the light emission of the organic EL element 10 of each of the plurality of pixels 3. It is carried out.
- Such a light emitting method is called an active matrix method.
- the light emission of the organic EL element 10 may be light emission of a plurality of gradations by a multi-value image data signal having a plurality of gradation potentials, or by turning on / off a predetermined light emission amount by a binary image data signal. Good.
- the potential of the capacitor 13 may be held continuously until the next scanning signal is applied, or may be discharged immediately before the next scanning signal is applied.
- a passive matrix light emission drive in which the organic EL element emits light according to the data signal only when the scanning signal is scanned.
- FIG. 4 is a schematic view of a passive matrix display device.
- a plurality of scanning lines 5 and a plurality of image data lines 6 are provided in a lattice shape so as to face each other with the pixel 3 interposed therebetween.
- the scanning signal of the scanning line 5 is applied by sequential scanning, the pixels 3 connected to the applied scanning line 5 emit light according to the image data signal.
- the pixel 3 has no active element, and the manufacturing cost can be reduced.
- the organic EL element of the present invention By using the organic EL element of the present invention, a display device with improved luminous efficiency was obtained.
- the organic EL element of the present invention can also be used for a lighting device.
- the organic EL element of the present invention may be used as an organic EL element having a resonator structure.
- Examples of the purpose of use of the organic EL element having such a resonator structure include a light source of an optical storage medium, a light source of an electrophotographic copying machine, a light source of an optical communication processing machine, and a light source of an optical sensor. It is not limited. Moreover, you may use for the said use by making a laser oscillation.
- the organic EL element of the present invention may be used as a kind of lamp for illumination or exposure light source, a projection device for projecting an image, or a type for directly viewing a still image or a moving image. It may be used as a display device (display).
- the driving method when used as a display device for reproducing a moving image may be either a passive matrix method or an active matrix method.
- a full-color display device can be manufactured by using two or more organic EL elements of the present invention having different emission colors.
- the luminescent compound of the present invention can be applied to an organic EL element that emits substantially white light as a lighting device.
- white light emission can be obtained by simultaneously emitting a plurality of light emission colors and mixing the colors.
- the light emission may include three light emission maximum wavelengths of three primary colors of red, green and blue, or two light emission utilizing a complementary color relationship such as blue and yellow, blue green and orange, etc. It may contain a maximum wavelength.
- the method for forming the organic EL device of the present invention may be simply arranged by providing a mask only when forming a light emitting layer, a hole transport layer, an electron transport layer, or the like, and separately coating with the mask. Since the other layers are common, patterning of a mask or the like is unnecessary, and for example, an electrode film can be formed on one surface by a vapor deposition method, a cast method, a spin coating method, an ink jet method, a printing method, or the like, and productivity is improved. According to this method, unlike a white organic EL device in which light emitting elements of a plurality of colors are arranged in parallel in an array, the elements themselves are luminescent white.
- FIG. 1 One Embodiment of Lighting Device of the Present Invention.
- the non-light emitting surface of the organic EL device of the present invention is covered with a glass case, a 300 ⁇ m thick glass substrate is used as a sealing substrate, and an epoxy photocurable adhesive (LUX The track LC0629B) is applied, and this is overlaid on the cathode and brought into close contact with the transparent support substrate, irradiated with UV light from the glass substrate side, cured, sealed, and illuminated as shown in FIGS.
- a device can be formed.
- FIG. 1 An epoxy photocurable adhesive
- FIG. 5 shows a schematic diagram of the lighting device, and the organic EL element of the present invention (organic EL element 101 in the lighting device) is covered with a glass cover 102 (note that the sealing operation with the glass cover is performed by lighting. This was performed in a glove box under a nitrogen atmosphere (in an atmosphere of high-purity nitrogen gas having a purity of 99.999% or more) without bringing the organic EL element 101 in the apparatus into contact with the air.
- FIG. 6 is a cross-sectional view of the lighting device.
- reference numeral 105 denotes a cathode
- 106 denotes an organic layer
- 107 denotes a glass substrate with a transparent electrode.
- the glass cover 102 is filled with nitrogen gas 108 and a water catching agent 109 is provided.
- This transparent support substrate is fixed to a substrate holder of a commercially available vacuum deposition apparatus, while ⁇ -NPD (N, N′-Diphenyl-N, N′-bis (1-naphthalenyl) -1,1 is attached to a resistance heating boat made of molybdenum.
- the hole-transporting layer was heated by energizing the heating boat containing the host compound OC-4 and the heating boat containing the comparative compound 1 at a deposition rate of 0.1 nm / second and 0.010 nm / second, respectively.
- a 40 nm light-emitting layer was provided by co-evaporation.
- the heating boat containing BCP was energized and heated, and was deposited on the hole blocking layer at a deposition rate of 0.1 nm / second to provide an electron transport layer of 30 nm. Subsequently, lithium fluoride 0.5 nm was deposited as a cathode buffer layer, and aluminum 110 nm was further deposited to form a cathode, thereby fabricating an organic EL device 1-1.
- the external quantum efficiency (EQE) can be expressed by the product of the internal quantum efficiency (IQE) and the light extraction efficiency (OC) (see formula (A)).
- Formula (A): EQE IQE ⁇ OC
- EQE and OC obtained by measurement and analysis are applied to the formula (A) to calculate the internal quantum efficiency of the light emitting material of the organic EL element 1-1.
- the internal quantum efficiency was calculated in the same manner for the organic EL elements 1-2 to 1-20.
- Table 2 shows relative values when the internal quantum efficiency of the organic EL element 1-1 is 100.
- Table 2 shows that the organic EL element using the iridium complex of the present invention has higher internal quantum efficiency (luminous efficiency) than the organic EL element of the comparative example.
- the organic EL element was measured for the resistance value of the light emitting layer before and after driving for 1000 hours under room temperature (25 ° C.) and constant current conditions of 2.5 mA / cm 2 , and the calculation results are shown below.
- the change rate of the resistance value was obtained by calculation.
- Table 2 shows the relative ratio when the rate of change of the resistance value of the organic EL element 1-1 is 100.
- Change rate of resistance value before and after driving
- a value closer to 0 indicates a smaller rate of change before and after driving. From Table 2, it was found that the organic EL device using the iridium complex of the present invention had a smaller change rate of the resistance value of the light emitting layer than the organic EL device of the comparative example, and had an excellent emission lifetime.
- the iridium complex of the present invention can be suitably used in the field of organic EL elements, and further, display devices, displays, home lighting, interior lighting, clocks and liquid crystal backlights equipped with organic EL elements.
- Wide light-emitting sources such as signboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light sources of optical sensors, and general household appliances that require display devices can be suitably used.
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Abstract
The present invention addresses the problem of providing an iridium complex having improved light-emission efficiency and durability, an organic electroluminescence material and organic electroluminescence element which use the iridium complex, and an illumination device and a display device provided with the organic electroluminescence element. This iridium complex has a bidentate ligand including a heteroaromatic ring and is characterized in that the bidentate ligand is a ligand in which the heteroaromatic ring and another heteroaromatic ring or aromatic ring are bonded by a single bond, and the ligand has a hydrogen bond therein.
Description
本発明は、イリジウム錯体と、当該イリジウム錯体を用いる有機エレクトロルミネッセンス材料、有機エレクトロルミネッセンス素子、当該有機エレクトロルミネッセンス素子が具備されている表示装置及び照明装置に関する。より詳しくは、発光効率及び耐久性を改善させたイリジウム錯体等に関するものである。
The present invention relates to an iridium complex, an organic electroluminescence material using the iridium complex, an organic electroluminescence element, and a display device and an illumination device provided with the organic electroluminescence element. More specifically, the present invention relates to an iridium complex having improved luminous efficiency and durability.
有機エレクトロルミネッセンス素子(以下、有機EL素子ともいう。)は、発光する化合物を含有する発光層を、陰極と陽極とで挟んだ構成を有し、電界を印加することにより、陽極から注入された正孔と陰極から注入された電子を発光層内で再結合させることで励起子(エキシトン)を生成させ、このエキシトンが失活する際の光の放出(蛍光・リン光)を利用した発光素子である。また、有機EL素子は、電極と電極の間を厚さが僅かサブミクロン程度である有機材料の膜で構成する全固体素子であり、数V~数十V程度の電圧で発光が可能であることから、次世代の平面ディスプレイや照明への利用が期待されている。
An organic electroluminescence element (hereinafter also referred to as an organic EL element) has a configuration in which a light emitting layer containing a light emitting compound is sandwiched between a cathode and an anode, and is injected from the anode by applying an electric field. A light emitting device that utilizes excitons (excitons) by recombining electrons injected from holes and cathodes in the light emitting layer, and light emission (fluorescence / phosphorescence) when the excitons are deactivated It is. An organic EL element is an all-solid-state element composed of an organic material film having a thickness of only a submicron between electrodes, and can emit light at a voltage of about several volts to several tens of volts. Therefore, it is expected to be used for next-generation flat display and lighting.
実用化に向けた有機EL素子の開発としては、プリンストン大より、励起三重項からのリン光発光を用いる有機EL素子の報告がされ、以来、室温でリン光を示す材料の研究が活発になってきている。
更に、リン光発光を利用する有機EL素子は、以前の蛍光発光を利用する有機EL素子に比べ原理的に約4倍の発光効率が実現可能であることから、その材料開発を初めとして、発光素子の層構成や電極の研究開発が世界中で行われている。例えば、イリジウム錯体等の重金属錯体を中心に多くの化合物が合成検討なされている。
このように、リン光発光方式は大変ポテンシャルの高い方式であるが、リン光発光を利用する有機EL素子においては、蛍光発光を利用する有機EL素子とは大きく異なり、発光中心の位置をコントロールする方法、とりわけ発光層の内部で再結合を行い、いかに発光を安定に行わせることができるかが、素子の効率・寿命を向上させる上で重要な技術的課題となっている。 As for the development of organic EL elements for practical application, Princeton University has reported on organic EL elements that use phosphorescence from excited triplets, and since then, research on materials that exhibit phosphorescence at room temperature has become active. It is coming.
In addition, organic EL elements that utilize phosphorescence emission can in principle achieve a light emission efficiency that is approximately four times that of organic EL elements that utilize fluorescence emission. Research and development of device layer configurations and electrodes are performed all over the world. For example, many compounds have been studied focusing on heavy metal complexes such as iridium complexes.
As described above, the phosphorescence emission method is a method having a very high potential. However, an organic EL element using phosphorescence emission is greatly different from an organic EL element using fluorescence emission, and the position of the emission center is controlled. The method, particularly how to recombine within the light emitting layer and how to stably emit light, is an important technical issue in improving the efficiency and lifetime of the device.
更に、リン光発光を利用する有機EL素子は、以前の蛍光発光を利用する有機EL素子に比べ原理的に約4倍の発光効率が実現可能であることから、その材料開発を初めとして、発光素子の層構成や電極の研究開発が世界中で行われている。例えば、イリジウム錯体等の重金属錯体を中心に多くの化合物が合成検討なされている。
このように、リン光発光方式は大変ポテンシャルの高い方式であるが、リン光発光を利用する有機EL素子においては、蛍光発光を利用する有機EL素子とは大きく異なり、発光中心の位置をコントロールする方法、とりわけ発光層の内部で再結合を行い、いかに発光を安定に行わせることができるかが、素子の効率・寿命を向上させる上で重要な技術的課題となっている。 As for the development of organic EL elements for practical application, Princeton University has reported on organic EL elements that use phosphorescence from excited triplets, and since then, research on materials that exhibit phosphorescence at room temperature has become active. It is coming.
In addition, organic EL elements that utilize phosphorescence emission can in principle achieve a light emission efficiency that is approximately four times that of organic EL elements that utilize fluorescence emission. Research and development of device layer configurations and electrodes are performed all over the world. For example, many compounds have been studied focusing on heavy metal complexes such as iridium complexes.
As described above, the phosphorescence emission method is a method having a very high potential. However, an organic EL element using phosphorescence emission is greatly different from an organic EL element using fluorescence emission, and the position of the emission center is controlled. The method, particularly how to recombine within the light emitting layer and how to stably emit light, is an important technical issue in improving the efficiency and lifetime of the device.
まずは、リン光発光性化合物の発光効率を高くすることが重要である。この発光効率は、発光を伴って遷移する輻射速度と、熱を伴って遷移する無輻射遷移の比によって、発光効率が決まる。この無輻射遷移とリン光発光性化合物の構造変化には、密接なつながりがあることが知られている。すなわち、大きな構造変化が起きると熱を伴って遷移してしまい、発光効率が低下してしまう(例えば、非特許文献1参照。)。
First, it is important to increase the luminous efficiency of the phosphorescent compound. The luminous efficiency is determined by the ratio of the radiation speed that transitions with light emission to the non-radiative transition that transitions with heat. It is known that there is a close connection between the non-radiative transition and the structural change of the phosphorescent compound. That is, when a large structural change occurs, the transition occurs with heat, and the light emission efficiency decreases (for example, see Non-Patent Document 1).
通常、リン光発光性化合物は、遷移金属と配位子から構成される。配位子として、例えば、芳香族複素環と芳香族環(又は芳香族複素環)を単結合でつないでいる化合物(以下、ビアリール型配位子ともいう。)を用いる場合が多く、無輻射遷移が増大する主原因はビアリール型配位子の構造変化であると考えられる。
具体的には、遷移金属と配位結合しているビアリール型配位子を構成する芳香族環及び芳香族複素環(又は二つの芳香族複素環)は、単結合で結合しているため、構造変化が生じ、無輻射遷移が増大する。
このビアリール型配位子の構造を固定化する手段として、一般的な手法は「立体障害を活用した剛直化」である(例えば、特許文献1参照。)。その他にも、ビアリール型配位子の二つの環構造をさらに共有結合でつないだ化合物も知られている(例えば、特許文献2参照。)。 Usually, the phosphorescent compound is composed of a transition metal and a ligand. As the ligand, for example, a compound in which an aromatic heterocycle and an aromatic ring (or aromatic heterocycle) are connected by a single bond (hereinafter, also referred to as a biaryl-type ligand) is often used. It is considered that the main cause of the increase in transition is a structural change of the biaryl type ligand.
Specifically, the aromatic ring and aromatic heterocycle (or two aromatic heterocycles) constituting the biaryl-type ligand coordinated with the transition metal are bonded with a single bond, Structural changes occur and non-radiative transitions increase.
As a means for fixing the structure of this biaryl-type ligand, a general technique is “stiffening utilizing steric hindrance” (see, for example, Patent Document 1). In addition, a compound in which two ring structures of a biaryl type ligand are further connected by a covalent bond is also known (see, for example, Patent Document 2).
具体的には、遷移金属と配位結合しているビアリール型配位子を構成する芳香族環及び芳香族複素環(又は二つの芳香族複素環)は、単結合で結合しているため、構造変化が生じ、無輻射遷移が増大する。
このビアリール型配位子の構造を固定化する手段として、一般的な手法は「立体障害を活用した剛直化」である(例えば、特許文献1参照。)。その他にも、ビアリール型配位子の二つの環構造をさらに共有結合でつないだ化合物も知られている(例えば、特許文献2参照。)。 Usually, the phosphorescent compound is composed of a transition metal and a ligand. As the ligand, for example, a compound in which an aromatic heterocycle and an aromatic ring (or aromatic heterocycle) are connected by a single bond (hereinafter, also referred to as a biaryl-type ligand) is often used. It is considered that the main cause of the increase in transition is a structural change of the biaryl type ligand.
Specifically, the aromatic ring and aromatic heterocycle (or two aromatic heterocycles) constituting the biaryl-type ligand coordinated with the transition metal are bonded with a single bond, Structural changes occur and non-radiative transitions increase.
As a means for fixing the structure of this biaryl-type ligand, a general technique is “stiffening utilizing steric hindrance” (see, for example, Patent Document 1). In addition, a compound in which two ring structures of a biaryl type ligand are further connected by a covalent bond is also known (see, for example, Patent Document 2).
これらの化合物の発光性は良好であり、高いポテンシャルを有する青色リン光発光性化合物であることが報告されている。しかし、ビアリール型配位子の構造を固定化する手段として芳香族基を導入すると、ドーパント同士の会合や凝集を引き起こして、濃度消光やエキシマー発光を併発してしまうという問題がある。
このドーパント同士の会合・凝集は、成膜直後に起こることもあるが、通電経時の発光層薄膜に電解や局所的なジュール熱がかかった場合により顕著に発生する。
このように、通電経時にドーパント同士の会合・凝集が起きることで、発光層内の膜状態が変化することとなり、正孔の流れ易さや電子の流れ易さに変化が起こる。これによって、発光層内の抵抗値が変化し、駆動時の電圧上昇を引き起こしてしまう。 It has been reported that these compounds have good luminescent properties and are blue phosphorescent compounds having high potential. However, when an aromatic group is introduced as a means for immobilizing the structure of the biaryl-type ligand, there is a problem that concentration quenching and excimer emission occur simultaneously due to association and aggregation of dopants.
The association / aggregation between the dopants may occur immediately after the film formation, but it occurs remarkably when electrolysis or local Joule heat is applied to the light-emitting layer thin film over time.
As described above, the association / aggregation of the dopants with the passage of time of energization changes the state of the film in the light emitting layer, which changes the ease of hole flow and the ease of electron flow. As a result, the resistance value in the light emitting layer changes, causing a voltage increase during driving.
このドーパント同士の会合・凝集は、成膜直後に起こることもあるが、通電経時の発光層薄膜に電解や局所的なジュール熱がかかった場合により顕著に発生する。
このように、通電経時にドーパント同士の会合・凝集が起きることで、発光層内の膜状態が変化することとなり、正孔の流れ易さや電子の流れ易さに変化が起こる。これによって、発光層内の抵抗値が変化し、駆動時の電圧上昇を引き起こしてしまう。 It has been reported that these compounds have good luminescent properties and are blue phosphorescent compounds having high potential. However, when an aromatic group is introduced as a means for immobilizing the structure of the biaryl-type ligand, there is a problem that concentration quenching and excimer emission occur simultaneously due to association and aggregation of dopants.
The association / aggregation between the dopants may occur immediately after the film formation, but it occurs remarkably when electrolysis or local Joule heat is applied to the light-emitting layer thin film over time.
As described above, the association / aggregation of the dopants with the passage of time of energization changes the state of the film in the light emitting layer, which changes the ease of hole flow and the ease of electron flow. As a result, the resistance value in the light emitting layer changes, causing a voltage increase during driving.
本発明は、上記問題・状況に鑑みてなされたものであり、その解決課題は、発光効率及び耐久性を改善したイリジウム錯体、当該イリジウム錯体を用いる有機エレクトロルミネッセンス材料及び有機エレクトロルミネッセンス素子並びに当該有機エレクトロルミネッセンス素子が具備されている表示装置及び照明装置を提供することである。
The present invention has been made in view of the above-described problems and circumstances, and the problem to be solved is an iridium complex with improved luminous efficiency and durability, an organic electroluminescent material using the iridium complex, an organic electroluminescent element, and the organic It is to provide a display device and a lighting device provided with an electroluminescence element.
本発明者は、上記課題を解決すべく、上記問題の原因等について検討する過程において、イリジウム錯体の二座配位子が、配位子内に水素結合を有し、構造を固定化することにより、無輻射遷移を抑制することができ、発光効率及び耐久性の改善につながることを見いだし本発明に至った。
すなわち、本発明係る上記課題は、以下の手段により解決される。 In order to solve the above-mentioned problems, the present inventor is that the bidentate ligand of the iridium complex has a hydrogen bond in the ligand and immobilizes the structure in the process of examining the cause of the above-mentioned problem. As a result, it was found that non-radiative transition can be suppressed, leading to improvement in luminous efficiency and durability, and the present invention has been achieved.
That is, the said subject which concerns on this invention is solved by the following means.
すなわち、本発明係る上記課題は、以下の手段により解決される。 In order to solve the above-mentioned problems, the present inventor is that the bidentate ligand of the iridium complex has a hydrogen bond in the ligand and immobilizes the structure in the process of examining the cause of the above-mentioned problem. As a result, it was found that non-radiative transition can be suppressed, leading to improvement in luminous efficiency and durability, and the present invention has been achieved.
That is, the said subject which concerns on this invention is solved by the following means.
1.芳香族複素環を含む二座配位子を有するイリジウム錯体であって、
前記二座配位子が、前記芳香族複素環と他の芳香族複素環又は芳香族環が単結合により結合されている配位子であり、かつ当該配位子内に水素結合を有することを特徴とするイリジウム錯体。 1. An iridium complex having a bidentate ligand containing an aromatic heterocycle,
The bidentate ligand is a ligand in which the aromatic heterocycle and another aromatic heterocycle or aromatic ring are bonded by a single bond, and has a hydrogen bond in the ligand. An iridium complex characterized by
前記二座配位子が、前記芳香族複素環と他の芳香族複素環又は芳香族環が単結合により結合されている配位子であり、かつ当該配位子内に水素結合を有することを特徴とするイリジウム錯体。 1. An iridium complex having a bidentate ligand containing an aromatic heterocycle,
The bidentate ligand is a ligand in which the aromatic heterocycle and another aromatic heterocycle or aromatic ring are bonded by a single bond, and has a hydrogen bond in the ligand. An iridium complex characterized by
2.前記水素結合を形成する水素原子の解離エネルギーが、390kJ/mol以下であることを特徴とする第1項に記載のイリジウム錯体。
2. 2. The iridium complex according to item 1, wherein the dissociation energy of the hydrogen atom forming the hydrogen bond is 390 kJ / mol or less.
3.前記水素結合を形成する水素原子と水素結合している原子が、窒素原子、酸素原子、リン原子又はケイ素原子であることを特徴とする第1項又は第2項に記載のイリジウム錯体。
3. 3. The iridium complex according to item 1 or 2, wherein the hydrogen atom that forms a hydrogen bond is a nitrogen atom, an oxygen atom, a phosphorus atom, or a silicon atom.
4.前記イリジウム錯体が、下記一般式(1)で表される部分構造を有することを特徴とする第1項から第3項までのいずれか一項に記載のイリジウム錯体。
(一般式(1)中、A1及びA2は、それぞれ、芳香族炭化水素環又は芳香族複素環を表す。A3は、芳香族複素環を表す。X1、X5、X1a及びX5aは、それぞれ、窒素原子又は炭素原子を表す。X2~X4は、それぞれ、窒素原子、炭素原子、酸素原子又は硫黄原子を表す。X6は、酸素原子、窒素原子、硫黄原子、リン原子又はケイ素原子を表す。Raは、水素原子、芳香族炭化水素環基、芳香族複素環基、複素環基、アルキル基又はシクロアルキル基を表す。nは0又は1を表す。lは1~3を表す。mは0~2を表す。l+m=3である。)
4). The iridium complex according to any one of items 1 to 3, wherein the iridium complex has a partial structure represented by the following general formula (1).
(In General Formula (1), A 1 and A 2 each represent an aromatic hydrocarbon ring or an aromatic heterocyclic ring. A 3 represents an aromatic heterocyclic ring. X 1 , X 5 , X 1a and X 5a represents a nitrogen atom or a carbon atom, X 2 to X 4 each represents a nitrogen atom, a carbon atom, an oxygen atom, or a sulfur atom, X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, Represents a phosphorus atom or a silicon atom, Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group, n represents 0 or 1, and l represents Represents 1 to 3. m represents 0 to 2. l + m = 3)
5.前記イリジウム錯体におけるX1~X5で形成される環が、イミダゾール環又はトリアゾール環であることを特徴とする第3項に記載のイリジウム錯体。
5. 4. The iridium complex according to item 3, wherein the ring formed by X 1 to X 5 in the iridium complex is an imidazole ring or a triazole ring.
6.前記イリジウム錯体におけるA1が、ベンゼン環であることを特徴とする第4項又は第5項に記載のイリジウム錯体。
6). 6. The iridium complex according to item 4 or 5, wherein A 1 in the iridium complex is a benzene ring.
7.前記イリジウム錯体が、下記一般式(2)で表される部分構造を有することを特徴とする第1項から第3項までのいずれか一項に記載のイリジウム錯体。
(一般式(2)中、A2は、芳香族炭化水素環又は芳香族複素環を表す。A3は、X1a及びX5aを含む芳香族複素環を表す。A4は、X6を含む芳香族複素環を表す。X1、X5、X1a及びX5aは、それぞれ、窒素原子又は炭素原子を表す。X2~X4は、窒素原子、炭素原子、酸素原子又は硫黄原子を表す。X6は、酸素原子、窒素原子、硫黄原子、リン原子又はケイ素原子を表す。X7及びX8は、CRc、Nを表し、Rcは水素原子又は置換基を表す。nsは0又は1を表す。lは1~3を表す。mは0~2を表す。l+m=3である。)
7). The iridium complex according to any one of items 1 to 3, wherein the iridium complex has a partial structure represented by the following general formula (2).
(In General Formula (2), A 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring. A 3 represents an aromatic heterocyclic ring containing X 1a and X 5a. A 4 represents X 6 . X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom, and X 2 to X 4 represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom, respectively. X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom, X 7 and X 8 represent CRc and N, Rc represents a hydrogen atom or a substituent, and ns represents 0 or 1 represents 1. l represents 1 to 3. m represents 0 to 2. l + m = 3.
8.前記イリジウム錯体が、下記一般式(3)で表される部分構造を有することを特徴とする第1項から第3項までのいずれか一項に記載のイリジウム錯体。
(一般式(3)中、A2は、芳香族炭化水素環又は芳香族複素環を表す。A3は、芳香族複素環を表す。X1、X5、X1a及びX5aは、それぞれ、窒素原子又は炭素原子を表す。X2~X4は、それぞれ、窒素原子、炭素原子、酸素原子又は硫黄原子を表す。X6は、酸素原子、窒素原子、硫黄原子、リン原子又はケイ素原子を表す。Raは、水素原子、芳香族炭化水素環基、芳香族複素環基、複素環基、アルキル基又はシクロアルキル基を表す。R1は、電子吸引基を表す。nは0又は1を表す。lは1~3を表す。mは0~2を表す。l+m=3である。)
8). The iridium complex according to any one of items 1 to 3, wherein the iridium complex has a partial structure represented by the following general formula (3).
(In General Formula (3), A 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring. A 3 represents an aromatic heterocyclic ring. X 1 , X 5 , X 1a and X 5a are each represented by X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom, or a sulfur atom, and X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, or a silicon atom. Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group, R 1 represents an electron withdrawing group, and n is 0 or 1 L represents 1 to 3. m represents 0 to 2. l + m = 3.
9.前記イリジウム錯体が、下記一般式(4)で表される部分構造を有することを特徴とする第1項から第3項までのいずれか一項に記載のイリジウム錯体。
(一般式(4)中、A2は、芳香族炭化水素環又は芳香族複素環を表す。A3は、芳香族複素環を表す。X1、X5、X1a及びX5aは、それぞれ、窒素原子又は炭素原子を表す。X2~X4は、それぞれ、窒素原子、炭素原子、酸素原子又は硫黄原子を表す。X6は、酸素原子、窒素原子、硫黄原子、リン原子又はケイ素原子を表す。Raは、水素原子、芳香族炭化水素環基、芳香族複素環基、複素環基、アルキル基又はシクロアルキル基を表す。R2は、電子供与基を表す。nは0又は1を表す。lは1~3を表す。mは0~2を表す。l+m=3である。)
9. The iridium complex according to any one of items 1 to 3, wherein the iridium complex has a partial structure represented by the following general formula (4).
(In General Formula (4), A 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring. A 3 represents an aromatic heterocyclic ring. X 1 , X 5 , X 1a and X 5a are each represented by X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom, or a sulfur atom, and X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, or a silicon atom. Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group, R 2 represents an electron donating group, and n is 0 or 1 L represents 1 to 3. m represents 0 to 2. l + m = 3.
10.前記イリジウム錯体が、下記一般式(5)で表される部分構造を有することを特徴とする第1項から第3項までのいずれか一項に記載のイリジウム錯体。
(一般式(5)中、Vは三価の連結基を表す。L1、L2及びL3と共有結合で連結している。L1~L3は、各々下記一般式(6)で表される部分構造である。)
(一般式(6)中、X1は、窒素原子又は炭素原子を表す。X2~X4は、それぞれ、窒素原子、炭素原子、酸素原子又は硫黄原子を表す。X6は、酸素原子、窒素原子、硫黄原子、リン原子又はケイ素原子を表す。Raは、水素原子、芳香族炭化水素環基、芳香族複素環基、複素環基、アルキル基又はシクロアルキル基を表す。nは0又は1を表す。*は、Vとの結合部位を表す。)
10. The iridium complex according to any one of items 1 to 3, wherein the iridium complex has a partial structure represented by the following general formula (5).
(In the general formula (5), V represents a trivalent linking group. It is linked to L 1 , L 2 and L 3 by a covalent bond. L 1 to L 3 are each represented by the following general formula (6). (Partial structure represented.)
(In General Formula (6), X 1 represents a nitrogen atom or a carbon atom. X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom, or a sulfur atom. X 6 represents an oxygen atom, Represents a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom, Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group, and n is 0 or 1 represents *. * Represents a binding site to V.)
11.第1項から第10項までのいずれか一項に記載のイリジウム錯体を含有することを特徴とする有機エレクトロルミネッセンス材料。
11. An organic electroluminescent material comprising the iridium complex according to any one of items 1 to 10.
12.陽極と陰極の間に、少なくとも発光層を有する有機エレクトロルミネッセンス素子であって、
当該発光層が、第11項に記載の有機エレクトロルミネッセンス材料を含有することを特徴とする有機エレクトロルミネッセンス素子。 12 An organic electroluminescence device having at least a light emitting layer between an anode and a cathode,
The said light emitting layer contains the organic electroluminescent material of 11th term | claim, The organic electroluminescent element characterized by the above-mentioned.
当該発光層が、第11項に記載の有機エレクトロルミネッセンス材料を含有することを特徴とする有機エレクトロルミネッセンス素子。 12 An organic electroluminescence device having at least a light emitting layer between an anode and a cathode,
The said light emitting layer contains the organic electroluminescent material of 11th term | claim, The organic electroluminescent element characterized by the above-mentioned.
13.第12項に記載の有機エレクトロルミネッセンス素子が具備されていることを特徴とする表示装置。
13. 13. A display device comprising the organic electroluminescence element according to item 12.
14.第12項に記載の有機エレクトロルミネッセンス素子が具備されていることを特徴とする照明装置。
14. 13. An illuminating device comprising the organic electroluminescence element according to item 12.
本発明によれば、発光効率及び耐久性を改善したイリジウム錯体、当該イリジウム錯体を用いる有機エレクトロルミネッセンス材料及び有機エレクトロルミネッセンス素子並びに当該有機エレクトロルミネッセンス素子が具備されている表示装置及び照明装置を提供することができる。
According to the present invention, there are provided an iridium complex with improved luminous efficiency and durability, an organic electroluminescent material using the iridium complex, an organic electroluminescent element, and a display device and an illumination device including the organic electroluminescent element. be able to.
本発明の効果の発現機構ないし作用機構については、明確にはなっていないが、以下のように推察している。
イリジウム錯体に、一般的に用いられるビアリール型配位子に水素結合を導入し、ビアリール型配位子の構造を固定化することにより、イリジウム錯体(以下Ir錯体ともいう。)全体の構造変化を抑制することができ、発光層を構成する膜中での変動を小さくすることができ、ドーパント同士の会合・凝集を抑制することができた。これによって、無輻射遷移を低下させることができ、当該イリジウム錯体を用いた有機EL素子の発光性が向上し、駆動時の電圧上昇を抑制することができたものと推察される。 The expression mechanism or action mechanism of the effect of the present invention is not clear, but is presumed as follows.
By introducing a hydrogen bond to a commonly used biaryl-type ligand to the iridium complex and fixing the structure of the biaryl-type ligand, the overall structure of the iridium complex (hereinafter also referred to as an Ir complex) can be changed. It was possible to suppress the fluctuation in the film constituting the light emitting layer, and to suppress the association / aggregation of the dopants. As a result, the non-radiative transition can be reduced, the light-emitting property of the organic EL element using the iridium complex is improved, and it is presumed that the voltage increase during driving can be suppressed.
イリジウム錯体に、一般的に用いられるビアリール型配位子に水素結合を導入し、ビアリール型配位子の構造を固定化することにより、イリジウム錯体(以下Ir錯体ともいう。)全体の構造変化を抑制することができ、発光層を構成する膜中での変動を小さくすることができ、ドーパント同士の会合・凝集を抑制することができた。これによって、無輻射遷移を低下させることができ、当該イリジウム錯体を用いた有機EL素子の発光性が向上し、駆動時の電圧上昇を抑制することができたものと推察される。 The expression mechanism or action mechanism of the effect of the present invention is not clear, but is presumed as follows.
By introducing a hydrogen bond to a commonly used biaryl-type ligand to the iridium complex and fixing the structure of the biaryl-type ligand, the overall structure of the iridium complex (hereinafter also referred to as an Ir complex) can be changed. It was possible to suppress the fluctuation in the film constituting the light emitting layer, and to suppress the association / aggregation of the dopants. As a result, the non-radiative transition can be reduced, the light-emitting property of the organic EL element using the iridium complex is improved, and it is presumed that the voltage increase during driving can be suppressed.
また、有機EL素子に使用されるイリジウム錯体の製造方法として、塩化イリジウムを用いて、配位子と反応させるのが一般的である。この反応では、副生成物として塩酸が生成する。したがって、配位子に、例えばイミダゾールを含む場合に、イミダゾールのN位にHが存在すると、塩酸塩を形成する等のHとClの間に電荷のやりとりが起こってしまう。よって、N位にメチル基等の何らかの置換基を導入しない限り、Ir錯体の合成は困難である。
そこで、N位にHが存在しても、配位子内に分子内水素結合を導入することで、反応副生成物である塩酸と電荷のやりとりをなくし、Ir錯体の製造ができることを見いだした。 Moreover, as a manufacturing method of the iridium complex used for an organic EL element, it is common to make it react with a ligand using iridium chloride. In this reaction, hydrochloric acid is generated as a by-product. Therefore, when the ligand contains, for example, imidazole, if H is present at the N-position of imidazole, charge exchange occurs between H and Cl, such as formation of hydrochloride. Therefore, it is difficult to synthesize an Ir complex unless some substituent such as a methyl group is introduced at the N position.
Therefore, even if H is present at the N position, it was found that by introducing an intramolecular hydrogen bond in the ligand, exchange of charge with hydrochloric acid as a reaction by-product is eliminated, and an Ir complex can be produced. .
そこで、N位にHが存在しても、配位子内に分子内水素結合を導入することで、反応副生成物である塩酸と電荷のやりとりをなくし、Ir錯体の製造ができることを見いだした。 Moreover, as a manufacturing method of the iridium complex used for an organic EL element, it is common to make it react with a ligand using iridium chloride. In this reaction, hydrochloric acid is generated as a by-product. Therefore, when the ligand contains, for example, imidazole, if H is present at the N-position of imidazole, charge exchange occurs between H and Cl, such as formation of hydrochloride. Therefore, it is difficult to synthesize an Ir complex unless some substituent such as a methyl group is introduced at the N position.
Therefore, even if H is present at the N position, it was found that by introducing an intramolecular hydrogen bond in the ligand, exchange of charge with hydrochloric acid as a reaction by-product is eliminated, and an Ir complex can be produced. .
本発明のイリジウム錯体は、芳香族複素環を含む二座配位子を有するイリジウム錯体であって、前記二座配位子が、前記芳香族複素環と他の芳香族複素環又は芳香族環が単結合により結合されている配位子であり、かつ当該配位子内に水素結合を有することを特徴とする。この特徴は、請求項1から請求項14までの請求項に係る発明に共通する技術的特徴である。
The iridium complex of the present invention is an iridium complex having a bidentate ligand containing an aromatic heterocycle, wherein the bidentate ligand is the aromatic heterocycle and another aromatic heterocycle or aromatic ring. Is a ligand bonded by a single bond, and has a hydrogen bond in the ligand. This feature is a technical feature common to the inventions according to claims 1 to 14.
本発明の実施態様としては、前記水素結合を形成する水素原子の解離エネルギーが、390kJ/mol以下であることが、配位子の構造変化を抑制することができる水素結合であるため好ましい。
As an embodiment of the present invention, the dissociation energy of the hydrogen atom forming the hydrogen bond is preferably 390 kJ / mol or less because it is a hydrogen bond that can suppress the structural change of the ligand.
また、前記水素結合を形成する水素原子と水素結合している原子が、窒素原子、酸素原子、リン原子又はケイ素原子であることが強い水素結合を形成するため好ましい。
In addition, it is preferable that the hydrogen atom forming the hydrogen bond is a nitrogen atom, an oxygen atom, a phosphorus atom, or a silicon atom because a strong hydrogen bond is formed.
また、前記イリジウム錯体が、本発明の効果発現の観点から、前記一般式(1)で表される部分構造を有することが好ましい。
Moreover, it is preferable that the iridium complex has a partial structure represented by the general formula (1) from the viewpoint of manifesting the effect of the present invention.
また、前記イリジウム錯体におけるX1~X5で形成される環が、イミダゾール環又はトリアゾール環であることが好ましい。これにより、輻射速度を速くすることができる。
In addition, the ring formed by X 1 to X 5 in the iridium complex is preferably an imidazole ring or a triazole ring. Thereby, the radiation speed can be increased.
また、前記イリジウム錯体におけるA1が、ベンゼン環であることが好ましい。これにより、輻射速度を速くすることができる。
Further, A 1 in the iridium complex is preferably a benzene ring. Thereby, the radiation speed can be increased.
また、前記イリジウム錯体が、本発明の効果発現の観点から、前記一般式(2)で表される部分構造を有することが好ましい。
In addition, it is preferable that the iridium complex has a partial structure represented by the general formula (2) from the viewpoint of manifesting the effect of the present invention.
また、前記イリジウム錯体が、本発明の効果発現の観点から、前記一般式(3)で表される部分構造を有することが好ましい。
Moreover, it is preferable that the iridium complex has a partial structure represented by the general formula (3) from the viewpoint of manifesting the effect of the present invention.
また、前記イリジウム錯体が、本発明の効果発現の観点から、前記一般式(4)で表される部分構造を有することが好ましい。
Moreover, it is preferable that the iridium complex has a partial structure represented by the general formula (4) from the viewpoint of manifesting the effect of the present invention.
また、前記イリジウム錯体が、本発明の効果発現の観点から、前記一般式(5)で表される部分構造を有することが好ましい。
Moreover, it is preferable that the iridium complex has a partial structure represented by the general formula (5) from the viewpoint of manifesting the effect of the present invention.
また、本発明の有機エレクトロルミネッセンス材料は、本発明のイリジウム錯体を含有することを特徴とする。これにより、発光効率及び耐久性を改善した有機EL材料を得ることができる。
The organic electroluminescent material of the present invention is characterized by containing the iridium complex of the present invention. Thereby, an organic EL material with improved luminous efficiency and durability can be obtained.
また、本発明の有機エレクトロルミネッセンス素子は、陽極と陰極の間に、少なくとも発光層を有する有機エレクトロルミネッセンス素子であって、当該発光層が、本発明の有機エレクトロルミネッセンス材料を含有することを特徴とする。これにより、発光効率及び耐久性を改善した有機EL素子を得ることができる。
The organic electroluminescent device of the present invention is an organic electroluminescent device having at least a light emitting layer between an anode and a cathode, and the light emitting layer contains the organic electroluminescent material of the present invention. To do. Thereby, the organic EL element which improved luminous efficiency and durability can be obtained.
本発明の有機エレクトロルミネッセンス素子は、表示装置に好適に具備され得る。これにより、発光効率及び耐久性を改善することができる。
The organic electroluminescence element of the present invention can be suitably provided in a display device. Thereby, luminous efficiency and durability can be improved.
本発明の有機エレクトロルミネッセンス素子は、照明装置に好適に具備され得る。これにより、発光効率及び耐久性を改善することができる。
The organic electroluminescence element of the present invention can be suitably provided in a lighting device. Thereby, luminous efficiency and durability can be improved.
以下、本発明とその構成要素及び本発明を実施するための形態・態様について詳細な説明をする。なお、本願において、「~」は、その前後に記載される数値を下限値及び上限値として含む意味で使用する。
本論に入る前に、イリジウム錯体の配位子に水素結合を導入するに至った経緯と合成上の問題について技術的思想の観点から述べる。 Hereinafter, the present invention, its components, and modes and modes for carrying out the present invention will be described in detail. In the present application, “˜” is used to mean that the numerical values described before and after it are included as a lower limit value and an upper limit value.
Before going into this paper, I will describe the background of the introduction of hydrogen bonds to the ligands of iridium complexes and the problems of synthesis from the viewpoint of technical ideas.
本論に入る前に、イリジウム錯体の配位子に水素結合を導入するに至った経緯と合成上の問題について技術的思想の観点から述べる。 Hereinafter, the present invention, its components, and modes and modes for carrying out the present invention will be described in detail. In the present application, “˜” is used to mean that the numerical values described before and after it are included as a lower limit value and an upper limit value.
Before going into this paper, I will describe the background of the introduction of hydrogen bonds to the ligands of iridium complexes and the problems of synthesis from the viewpoint of technical ideas.
リン光発光性化合物(イリジウム錯体)の発光効率は、発光を伴って遷移する輻射遷移と、熱を伴って遷移する無輻射遷移の比によって、発光効率が決まっている。この無輻射遷移とリン光発光性化合物の構造変化には、密接なつながりがあることが知られており、大きな構造変化が起きると熱を伴って遷移し、発光効率が低下してしまう。
通常、リン光発光性化合物は、遷移金属と配位子から構成される。配位子として、例えば、芳香族複素環と芳香族環(又は芳香族複素環)を単結合でつないでいるビアリール型配位子を用いる場合が多く、無輻射遷移が増大する主原因はビアリール型配位子の構造変化であると考えられる。
なお、本発明において、「ビアリール型配位子」とは、二つの芳香族環を単結合でつないでいる化合物ではなく、芳香族環と芳香族複素環を単結合でつないだ化合物及び二つの芳香族複素環を単結合でつないだ化合物であり、これらの芳香族環及び/又は芳香族複素環はさらに置換基を有していてもよい。 The luminous efficiency of the phosphorescent compound (iridium complex) is determined by the ratio of the radiative transition that transitions with light emission to the non-radiative transition that transitions with heat. It is known that the non-radiative transition and the structural change of the phosphorescent compound have a close connection, and when a large structural change occurs, the transition occurs with heat and the luminous efficiency is lowered.
Usually, the phosphorescent compound is composed of a transition metal and a ligand. As a ligand, for example, a biaryl type ligand in which an aromatic heterocycle and an aromatic ring (or an aromatic heterocycle) are connected by a single bond is often used, and the main cause of increasing non-radiative transition is biaryl. This is thought to be a structural change of the type ligand.
In the present invention, the “biaryl type ligand” is not a compound in which two aromatic rings are connected by a single bond, but a compound in which an aromatic ring and an aromatic heterocyclic ring are connected by a single bond, It is a compound in which aromatic heterocycles are connected by a single bond, and these aromatic rings and / or aromatic heterocycles may further have a substituent.
通常、リン光発光性化合物は、遷移金属と配位子から構成される。配位子として、例えば、芳香族複素環と芳香族環(又は芳香族複素環)を単結合でつないでいるビアリール型配位子を用いる場合が多く、無輻射遷移が増大する主原因はビアリール型配位子の構造変化であると考えられる。
なお、本発明において、「ビアリール型配位子」とは、二つの芳香族環を単結合でつないでいる化合物ではなく、芳香族環と芳香族複素環を単結合でつないだ化合物及び二つの芳香族複素環を単結合でつないだ化合物であり、これらの芳香族環及び/又は芳香族複素環はさらに置換基を有していてもよい。 The luminous efficiency of the phosphorescent compound (iridium complex) is determined by the ratio of the radiative transition that transitions with light emission to the non-radiative transition that transitions with heat. It is known that the non-radiative transition and the structural change of the phosphorescent compound have a close connection, and when a large structural change occurs, the transition occurs with heat and the luminous efficiency is lowered.
Usually, the phosphorescent compound is composed of a transition metal and a ligand. As a ligand, for example, a biaryl type ligand in which an aromatic heterocycle and an aromatic ring (or an aromatic heterocycle) are connected by a single bond is often used, and the main cause of increasing non-radiative transition is biaryl. This is thought to be a structural change of the type ligand.
In the present invention, the “biaryl type ligand” is not a compound in which two aromatic rings are connected by a single bond, but a compound in which an aromatic ring and an aromatic heterocyclic ring are connected by a single bond, It is a compound in which aromatic heterocycles are connected by a single bond, and these aromatic rings and / or aromatic heterocycles may further have a substituent.
具体的には、以下に示すように、遷移金属と配位結合しているビアリール型配位子を構成する芳香族環及び芳香族複素環(又は二つの芳香族複素環)は、単結合で結合しているため、構造変化が生じ、無輻射遷移が増大するものと考えられる。
Specifically, as shown below, the aromatic ring and aromatic heterocycle (or two aromatic heterocycles) constituting the biaryl-type ligand coordinated with the transition metal are single bonds. Since they are coupled, it is considered that structural change occurs and non-radiative transition increases.
また、このビアリール型配位子の構造を固定化する手段が、濃度消光やエキシマー発光を生じさせるドーパント同士の会合や凝集をも抑制することができる手段であることが望まれる。
このドーパント同士の会合・凝集は、成膜直後に起こることもあるが、通電経時の発光層薄膜に電解や局所的なジュール熱がかかった場合に、より顕著に発生する。
このように、通電経時にドーパント同士の会合・凝集が起きることで、発光層内の膜状態が変化し、正孔の流れ易さや電子の流れ易さに変化が起こるため、発光層内の抵抗値が変化し、駆動時の電圧上昇を引き起こしてしまうことを抑制する必要がある。 In addition, it is desirable that the means for fixing the structure of the biaryl ligand is a means that can also suppress association and aggregation of dopants that cause concentration quenching and excimer emission.
The association / aggregation between the dopants may occur immediately after the film formation, but it occurs more prominently when electrolysis or local Joule heat is applied to the light-emitting layer thin film over time.
As described above, the association / aggregation of the dopants with the passage of time changes the state of the film in the light emitting layer, which changes the ease of hole flow and the ease of electron flow. It is necessary to suppress the value from changing and causing a voltage increase during driving.
このドーパント同士の会合・凝集は、成膜直後に起こることもあるが、通電経時の発光層薄膜に電解や局所的なジュール熱がかかった場合に、より顕著に発生する。
このように、通電経時にドーパント同士の会合・凝集が起きることで、発光層内の膜状態が変化し、正孔の流れ易さや電子の流れ易さに変化が起こるため、発光層内の抵抗値が変化し、駆動時の電圧上昇を引き起こしてしまうことを抑制する必要がある。 In addition, it is desirable that the means for fixing the structure of the biaryl ligand is a means that can also suppress association and aggregation of dopants that cause concentration quenching and excimer emission.
The association / aggregation between the dopants may occur immediately after the film formation, but it occurs more prominently when electrolysis or local Joule heat is applied to the light-emitting layer thin film over time.
As described above, the association / aggregation of the dopants with the passage of time changes the state of the film in the light emitting layer, which changes the ease of hole flow and the ease of electron flow. It is necessary to suppress the value from changing and causing a voltage increase during driving.
また、有機EL素子に使用されるイリジウム錯体の製造方法は、塩化イリジウムを用いて、配位子と反応させるのが一般的である。この反応では、副生成物として塩酸が生成する。したがって、配位子に、例えばイミダゾール環を含む場合に、イミダゾールのN位にHが存在すると、塩酸塩を形成する等のHとClの間に電荷のやりとりが起こってしまう。よって、N位にメチル基等の何らかの置換基を導入しない限り、Ir錯体の合成は困難である。
そこで、N位にHが存在しても置換基を導入することなく合成する方法として、配位子内に分子内水素結合を導入することにより、反応副生成物である塩酸と電荷のやりとりをなくし、Ir錯体の製造ができることを見いだした。 Moreover, as for the manufacturing method of the iridium complex used for an organic EL element, it is common to make it react with a ligand using iridium chloride. In this reaction, hydrochloric acid is generated as a by-product. Therefore, when the ligand contains, for example, an imidazole ring, if H is present at the N-position of the imidazole, charge exchange occurs between H and Cl, such as formation of hydrochloride. Therefore, it is difficult to synthesize an Ir complex unless some substituent such as a methyl group is introduced at the N position.
Therefore, as a method of synthesizing without introducing a substituent even if H is present at the N-position, by introducing an intramolecular hydrogen bond into the ligand, charge and reaction with hydrochloric acid, which is a reaction byproduct, can be performed. It was found that an Ir complex could be produced.
そこで、N位にHが存在しても置換基を導入することなく合成する方法として、配位子内に分子内水素結合を導入することにより、反応副生成物である塩酸と電荷のやりとりをなくし、Ir錯体の製造ができることを見いだした。 Moreover, as for the manufacturing method of the iridium complex used for an organic EL element, it is common to make it react with a ligand using iridium chloride. In this reaction, hydrochloric acid is generated as a by-product. Therefore, when the ligand contains, for example, an imidazole ring, if H is present at the N-position of the imidazole, charge exchange occurs between H and Cl, such as formation of hydrochloride. Therefore, it is difficult to synthesize an Ir complex unless some substituent such as a methyl group is introduced at the N position.
Therefore, as a method of synthesizing without introducing a substituent even if H is present at the N-position, by introducing an intramolecular hydrogen bond into the ligand, charge and reaction with hydrochloric acid, which is a reaction byproduct, can be performed. It was found that an Ir complex could be produced.
《有機EL素子の構成層》
本発明の有機EL素子の構成層について説明する。本発明の有機EL素子において、陽極と陰極との間に挟持される各種有機層の層構成の好ましい具体例を以下に示すが、本発明はこれらに限定されない。
(i)陽極/発光層ユニット/電子輸送層/陰極
(ii)陽極/正孔輸送層/発光層ユニット/電子輸送層/陰極
(iii)陽極/正孔輸送層/発光層ユニット/正孔阻止層/電子輸送層/陰極
(iv)陽極/正孔輸送層/発光層ユニット/正孔阻止層/電子輸送層/陰極バッファー層/陰極
(v)陽極/陽極バッファー層/正孔輸送層/発光層ユニット/正孔阻止層/電子輸送層/陰極バッファー層/陰極 << Constituent layers of organic EL elements >>
The constituent layers of the organic EL element of the present invention will be described. In the organic EL device of the present invention, preferred specific examples of the layer structure of various organic layers sandwiched between the anode and the cathode are shown below, but the present invention is not limited thereto.
(I) Anode / light emitting layer unit / electron transport layer / cathode (ii) Anode / hole transport layer / light emitting layer unit / electron transport layer / cathode (iii) Anode / hole transport layer / light emitting layer unit / hole blocking Layer / electron transport layer / cathode (iv) anode / hole transport layer / light emitting layer unit / hole blocking layer / electron transport layer / cathode buffer layer / cathode (v) anode / anode buffer layer / hole transport layer / light emission Layer unit / hole blocking layer / electron transport layer / cathode buffer layer / cathode
本発明の有機EL素子の構成層について説明する。本発明の有機EL素子において、陽極と陰極との間に挟持される各種有機層の層構成の好ましい具体例を以下に示すが、本発明はこれらに限定されない。
(i)陽極/発光層ユニット/電子輸送層/陰極
(ii)陽極/正孔輸送層/発光層ユニット/電子輸送層/陰極
(iii)陽極/正孔輸送層/発光層ユニット/正孔阻止層/電子輸送層/陰極
(iv)陽極/正孔輸送層/発光層ユニット/正孔阻止層/電子輸送層/陰極バッファー層/陰極
(v)陽極/陽極バッファー層/正孔輸送層/発光層ユニット/正孔阻止層/電子輸送層/陰極バッファー層/陰極 << Constituent layers of organic EL elements >>
The constituent layers of the organic EL element of the present invention will be described. In the organic EL device of the present invention, preferred specific examples of the layer structure of various organic layers sandwiched between the anode and the cathode are shown below, but the present invention is not limited thereto.
(I) Anode / light emitting layer unit / electron transport layer / cathode (ii) Anode / hole transport layer / light emitting layer unit / electron transport layer / cathode (iii) Anode / hole transport layer / light emitting layer unit / hole blocking Layer / electron transport layer / cathode (iv) anode / hole transport layer / light emitting layer unit / hole blocking layer / electron transport layer / cathode buffer layer / cathode (v) anode / anode buffer layer / hole transport layer / light emission Layer unit / hole blocking layer / electron transport layer / cathode buffer layer / cathode
更に、発光層ユニットは複数の発光層の間に非発光性の中間層を有していてもよく、該中間層が電荷発生層であるようなマルチフォトンユニット構成であってもよい。この場合、電荷発生層としては、ITO(インジウム・スズ酸化物)、IZO(インジウム・亜鉛酸化物)、ZnO2、TiN、ZrN、HfN、TiOx、VOx、CuI、InN、GaN、CuAlO2、CuGaO2、SrCu2O2、LaB6、RuO2等の導電性無機化合物層や、Au/Bi2O3等の二層膜や、SnO2/Ag/SnO2、ZnO/Ag/ZnO、Bi2O3/Au/Bi2O3、TiO2/TiN/TiO2、TiO2/ZrN/TiO2等の多層膜、またC60等のフラーレン類、オリゴチオフェン等の導電性有機物層、金属フタロシアニン類、無金属フタロシアニン類、金属ポルフィリン類、無金属ポルフィリン類等の導電性有機化合物層等が挙げられる。
本発明の有機EL素子における発光層としては白色発光層であることが好ましく、これらを用いた照明装置であることが好ましい。
本発明の有機EL素子を構成する各層について以下説明する。 Furthermore, the light emitting layer unit may have a non-light emitting intermediate layer between a plurality of light emitting layers, and may have a multi-photon unit configuration in which the intermediate layer is a charge generation layer. In this case, as the charge generating layer, ITO (indium tin oxide), IZO (indium zinc oxide), ZnO 2, TiN, ZrN , HfN, TiOx, VOx, CuI, InN, GaN, CuAlO 2, CuGaO 2 , conductive inorganic compound layers such as SrCu 2 O 2 , LaB 6 , RuO 2 , double-layer films such as Au / Bi 2 O 3 , SnO 2 / Ag / SnO 2 , ZnO / Ag / ZnO, Bi 2 Multilayer films such as O 3 / Au / Bi 2 O 3 , TiO 2 / TiN / TiO 2 , TiO 2 / ZrN / TiO 2 , fullerenes such as C 60 , conductive organic layers such as oligothiophene, metal phthalocyanines And conductive organic compound layers such as metal-free phthalocyanines, metal porphyrins and metal-free porphyrins.
The light emitting layer in the organic EL device of the present invention is preferably a white light emitting layer, and an illumination device using these is preferable.
Each layer which comprises the organic EL element of this invention is demonstrated below.
本発明の有機EL素子における発光層としては白色発光層であることが好ましく、これらを用いた照明装置であることが好ましい。
本発明の有機EL素子を構成する各層について以下説明する。 Furthermore, the light emitting layer unit may have a non-light emitting intermediate layer between a plurality of light emitting layers, and may have a multi-photon unit configuration in which the intermediate layer is a charge generation layer. In this case, as the charge generating layer, ITO (indium tin oxide), IZO (indium zinc oxide), ZnO 2, TiN, ZrN , HfN, TiOx, VOx, CuI, InN, GaN, CuAlO 2, CuGaO 2 , conductive inorganic compound layers such as SrCu 2 O 2 , LaB 6 , RuO 2 , double-layer films such as Au / Bi 2 O 3 , SnO 2 / Ag / SnO 2 , ZnO / Ag / ZnO, Bi 2 Multilayer films such as O 3 / Au / Bi 2 O 3 , TiO 2 / TiN / TiO 2 , TiO 2 / ZrN / TiO 2 , fullerenes such as C 60 , conductive organic layers such as oligothiophene, metal phthalocyanines And conductive organic compound layers such as metal-free phthalocyanines, metal porphyrins and metal-free porphyrins.
The light emitting layer in the organic EL device of the present invention is preferably a white light emitting layer, and an illumination device using these is preferable.
Each layer which comprises the organic EL element of this invention is demonstrated below.
《発光層》
本発明に係る発光層は、電極又は電子輸送層及び正孔輸送層から注入されてくる電子及び正孔が再結合して発光する層であり、発光する部分は発光層の層内であっても発光層と隣接層との界面であってもよい。
発光層の層厚の総和は特に制限はないが、膜の均質性や、発光時に不必要な高電圧を印加することを防止し、かつ、駆動電流に対する発光色の安定性向上の観点から、好ましくは2nm~5μmの範囲に調整され、更に好ましくは2~200nmの範囲に調整され、特に好ましくは5~100nmの範囲に調整される。 <Light emitting layer>
The light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode or the electron transport layer and the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.
The total thickness of the light emitting layer is not particularly limited, but from the viewpoint of improving the stability of the emission color against the drive current and the uniformity of the film, preventing unnecessary application of high voltage during light emission. It is preferably adjusted in the range of 2 nm to 5 μm, more preferably adjusted in the range of 2 to 200 nm, particularly preferably in the range of 5 to 100 nm.
本発明に係る発光層は、電極又は電子輸送層及び正孔輸送層から注入されてくる電子及び正孔が再結合して発光する層であり、発光する部分は発光層の層内であっても発光層と隣接層との界面であってもよい。
発光層の層厚の総和は特に制限はないが、膜の均質性や、発光時に不必要な高電圧を印加することを防止し、かつ、駆動電流に対する発光色の安定性向上の観点から、好ましくは2nm~5μmの範囲に調整され、更に好ましくは2~200nmの範囲に調整され、特に好ましくは5~100nmの範囲に調整される。 <Light emitting layer>
The light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode or the electron transport layer and the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.
The total thickness of the light emitting layer is not particularly limited, but from the viewpoint of improving the stability of the emission color against the drive current and the uniformity of the film, preventing unnecessary application of high voltage during light emission. It is preferably adjusted in the range of 2 nm to 5 μm, more preferably adjusted in the range of 2 to 200 nm, particularly preferably in the range of 5 to 100 nm.
発光層の作製には、後述する発光ドーパントやホスト化合物を用いて、例えば、真空蒸着法、湿式法(ウェットプロセスともいい、例えば、スピンコート法、キャスト法、ダイコート法、ブレードコート法、ロールコート法、インクジェット法、印刷法、スプレーコート法、カーテンコート法、LB法(ラングミュア・ブロジェット(Langmuir Blodgett法))等を挙げることができる。)等により成膜して形成することができる。
本発明の有機EL素子の発光層には、発光ドーパント(リン光発光性ドーパントや蛍光発光性ドーパント等)化合物と、ホスト化合物とを含有することが好ましい。 For the production of the light-emitting layer, a light-emitting dopant or a host compound, which will be described later, is used. Or the like, the ink jet method, the printing method, the spray coating method, the curtain coating method, the LB method (Langmuir Brodgett method, etc.).
The light emitting layer of the organic EL device of the present invention preferably contains a light emitting dopant (phosphorescent dopant, fluorescent light emitting dopant, etc.) compound and a host compound.
本発明の有機EL素子の発光層には、発光ドーパント(リン光発光性ドーパントや蛍光発光性ドーパント等)化合物と、ホスト化合物とを含有することが好ましい。 For the production of the light-emitting layer, a light-emitting dopant or a host compound, which will be described later, is used. Or the like, the ink jet method, the printing method, the spray coating method, the curtain coating method, the LB method (Langmuir Brodgett method, etc.).
The light emitting layer of the organic EL device of the present invention preferably contains a light emitting dopant (phosphorescent dopant, fluorescent light emitting dopant, etc.) compound and a host compound.
(1)発光性ドーパント
発光性ドーパント(発光ドーパント、ドーパント化合物、単にドーパントともいう)について説明する。
発光性ドーパントとしては、蛍光発光性ドーパント(蛍光ドーパント、蛍光性化合物、蛍光発光性化合物ともいう。)、リン光発光性ドーパント(リン光ドーパント、リン光性化合物、リン光発光性化合物等ともいう。)を用いることができる。 (1) Luminescent dopant The luminescent dopant (a luminescent dopant, a dopant compound, and only a dopant) is demonstrated.
As the luminescent dopant, a fluorescent luminescent dopant (also referred to as a fluorescent dopant, a fluorescent compound, or a fluorescent luminescent compound), a phosphorescent dopant (also referred to as a phosphorescent dopant, a phosphorescent compound, a phosphorescent compound, or the like). .) Can be used.
発光性ドーパント(発光ドーパント、ドーパント化合物、単にドーパントともいう)について説明する。
発光性ドーパントとしては、蛍光発光性ドーパント(蛍光ドーパント、蛍光性化合物、蛍光発光性化合物ともいう。)、リン光発光性ドーパント(リン光ドーパント、リン光性化合物、リン光発光性化合物等ともいう。)を用いることができる。 (1) Luminescent dopant The luminescent dopant (a luminescent dopant, a dopant compound, and only a dopant) is demonstrated.
As the luminescent dopant, a fluorescent luminescent dopant (also referred to as a fluorescent dopant, a fluorescent compound, or a fluorescent luminescent compound), a phosphorescent dopant (also referred to as a phosphorescent dopant, a phosphorescent compound, a phosphorescent compound, or the like). .) Can be used.
(1.1)リン光ドーパント
リン光ドーパントは、励起三重項からの発光が観測される化合物であり、具体的には室温(25℃)にてリン光発光する化合物であり、リン光量子収率が、25℃において0.01以上の化合物であると定義されるが、好ましいリン光量子収率は0.1以上である。
上記リン光量子収率は、第4版実験化学講座7の分光IIの398頁(1992年版、丸善)に記載の方法により測定できる。溶液中でのリン光量子収率は種々の溶媒を用いて測定できるが、本発明に係るリン光ドーパントは、任意の溶媒のいずれかにおいて上記リン光量子収率(0.01以上)が達成されればよい。 (1.1) Phosphorescent dopant A phosphorescent dopant is a compound in which light emission from an excited triplet is observed, specifically a compound that emits phosphorescence at room temperature (25 ° C.), and a phosphorescence quantum yield. Is defined as a compound of 0.01 or more at 25 ° C., but a preferable phosphorescence quantum yield is 0.1 or more.
The phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence dopant according to the present invention achieves the phosphorescence quantum yield (0.01 or more) in any solvent. That's fine.
リン光ドーパントは、励起三重項からの発光が観測される化合物であり、具体的には室温(25℃)にてリン光発光する化合物であり、リン光量子収率が、25℃において0.01以上の化合物であると定義されるが、好ましいリン光量子収率は0.1以上である。
上記リン光量子収率は、第4版実験化学講座7の分光IIの398頁(1992年版、丸善)に記載の方法により測定できる。溶液中でのリン光量子収率は種々の溶媒を用いて測定できるが、本発明に係るリン光ドーパントは、任意の溶媒のいずれかにおいて上記リン光量子収率(0.01以上)が達成されればよい。 (1.1) Phosphorescent dopant A phosphorescent dopant is a compound in which light emission from an excited triplet is observed, specifically a compound that emits phosphorescence at room temperature (25 ° C.), and a phosphorescence quantum yield. Is defined as a compound of 0.01 or more at 25 ° C., but a preferable phosphorescence quantum yield is 0.1 or more.
The phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence dopant according to the present invention achieves the phosphorescence quantum yield (0.01 or more) in any solvent. That's fine.
リン光ドーパントの発光は原理としては2種挙げられ、一つはキャリアが輸送されるホスト化合物上でキャリアの再結合が起こって発光性ホスト化合物の励起状態が生成し、このエネルギーをリン光ドーパントに移動させることでリン光ドーパントからの発光を得るというエネルギー移動型である。もう一つはリン光ドーパントがキャリアトラップとなり、リン光ドーパント上でキャリアの再結合が起こり、リン光ドーパントからの発光が得られるというキャリアトラップ型である。いずれの場合においても、リン光ドーパントの励起状態のエネルギーはホスト化合物の励起状態のエネルギーよりも低いことが条件である。
There are two types of light emission of the phosphorescent dopant in principle. One is the recombination of carriers on the host compound to which carriers are transported to generate the excited state of the luminescent host compound, and this energy is used as the phosphorescent dopant. It is an energy transfer type in which light emission from a phosphorescent dopant is obtained by moving to. The other is a carrier trap type in which a phosphorescent dopant becomes a carrier trap, and carrier recombination occurs on the phosphorescent dopant, and light emission from the phosphorescent dopant is obtained. In any case, it is a condition that the excited state energy of the phosphorescent dopant is lower than the excited state energy of the host compound.
ここで、本発明者らが上記本発明の目的を達成するために鋭意研究を重ねた結果、上述のとおり、本発明のイリジウム錯体は、芳香族複素環を含む二座配位子を有し、当該二座配位子が、前記芳香族複素環と他の芳香族複素環又は芳香族環が単結合により結合されている配位子であり、かつ当該配位子内に水素結合を有することで、有機EL素子に用いた際に発光効率及び耐久性を向上させられることを明らかにした。
ここで、水素結合とは、電気陰性度が大きな原子に共有結合で結びついた水素原子が、所定の距離及び角度に位置する窒素原子、酸素原子又は硫黄原子の孤立電子対と形成する非共有結合性の引力的相互作用である。
また、本発明においては、水素結合を形成する水素原子と共有結合する原子をX、水素結合によって結合が形成される原子をYとして、X-H…Yと表すことができ、HとYの間の距離が1.4~2.5Åの範囲内、X-H…Yのなす角が110~125°の範囲内である場合に水素結合を形成しているとする。 Here, as a result of the inventors' diligent research to achieve the object of the present invention, as described above, the iridium complex of the present invention has a bidentate ligand containing an aromatic heterocyclic ring. The bidentate ligand is a ligand in which the aromatic heterocycle and another aromatic heterocycle or an aromatic ring are bonded by a single bond, and has a hydrogen bond in the ligand. Thus, it has been clarified that when used in an organic EL element, the luminous efficiency and durability can be improved.
Here, the hydrogen bond is a non-covalent bond formed by a hydrogen atom covalently bonded to an atom having a large electronegativity with a lone electron pair of a nitrogen atom, an oxygen atom or a sulfur atom located at a predetermined distance and angle. It is an attractive interaction of sex.
In the present invention, an atom covalently bonded to a hydrogen atom forming a hydrogen bond can be expressed as X—H. Assume that hydrogen bonds are formed when the distance between them is in the range of 1.4 to 2.5 mm and the angle formed by XH... Y is in the range of 110 to 125 °.
ここで、水素結合とは、電気陰性度が大きな原子に共有結合で結びついた水素原子が、所定の距離及び角度に位置する窒素原子、酸素原子又は硫黄原子の孤立電子対と形成する非共有結合性の引力的相互作用である。
また、本発明においては、水素結合を形成する水素原子と共有結合する原子をX、水素結合によって結合が形成される原子をYとして、X-H…Yと表すことができ、HとYの間の距離が1.4~2.5Åの範囲内、X-H…Yのなす角が110~125°の範囲内である場合に水素結合を形成しているとする。 Here, as a result of the inventors' diligent research to achieve the object of the present invention, as described above, the iridium complex of the present invention has a bidentate ligand containing an aromatic heterocyclic ring. The bidentate ligand is a ligand in which the aromatic heterocycle and another aromatic heterocycle or an aromatic ring are bonded by a single bond, and has a hydrogen bond in the ligand. Thus, it has been clarified that when used in an organic EL element, the luminous efficiency and durability can be improved.
Here, the hydrogen bond is a non-covalent bond formed by a hydrogen atom covalently bonded to an atom having a large electronegativity with a lone electron pair of a nitrogen atom, an oxygen atom or a sulfur atom located at a predetermined distance and angle. It is an attractive interaction of sex.
In the present invention, an atom covalently bonded to a hydrogen atom forming a hydrogen bond can be expressed as X—H. Assume that hydrogen bonds are formed when the distance between them is in the range of 1.4 to 2.5 mm and the angle formed by XH... Y is in the range of 110 to 125 °.
また、本発明のイリジウム錯体の配位子内で形成される水素結合については、米国Gaussian社製の分子軌道計算用ソフトウェアであるGaussian98(Gaussian98、Revision A.11.4,M.J.Frisch,et al,Gaussian,Inc.,Pittsburgh PA,2002.)を用い、キーワードとしてB3LYP/6-31G*を用いて構造最適化を行い、当該構造最適化したイリジウム錯体について、距離及び角度に基づいて水素結合を判断した。
Moreover, about the hydrogen bond formed in the ligand of the iridium complex of this invention, it is Gaussian98 (Gaussian98, Revision A.11.4, MJ Frisch, Software for molecular orbital calculation made by Gaussian, USA). et al, Gaussian, Inc., Pittsburgh PA, 2002.) Using B3LYP / 6-31G * as a keyword as a keyword, the structure-optimized iridium complex is hydrogenated based on distance and angle. Judgment was made.
前記水素結合を形成する水素原子と水素結合している原子が、窒素原子、酸素原子、リン原子又はケイ素原子であることが強い水素結合を形成するため好ましい。
なお、本発明においては、イリジウム錯体の配位子内に水素結合を有することにより、構造変化を抑制することができるため、発光に関与する部位を固定化することができ、無輻射遷移を抑制することができる。
本発明のイリジウム錯体は、更に配位子間水素結合、分子間水素結合及びその他の相互作用を有していることも好ましい。 It is preferable that an atom hydrogen-bonded with the hydrogen atom forming the hydrogen bond is a nitrogen atom, an oxygen atom, a phosphorus atom, or a silicon atom because a strong hydrogen bond is formed.
In the present invention, since the structure change can be suppressed by having a hydrogen bond in the ligand of the iridium complex, the site involved in light emission can be immobilized, and the non-radiative transition is suppressed. can do.
The iridium complex of the present invention preferably further has interligand hydrogen bonds, intermolecular hydrogen bonds, and other interactions.
なお、本発明においては、イリジウム錯体の配位子内に水素結合を有することにより、構造変化を抑制することができるため、発光に関与する部位を固定化することができ、無輻射遷移を抑制することができる。
本発明のイリジウム錯体は、更に配位子間水素結合、分子間水素結合及びその他の相互作用を有していることも好ましい。 It is preferable that an atom hydrogen-bonded with the hydrogen atom forming the hydrogen bond is a nitrogen atom, an oxygen atom, a phosphorus atom, or a silicon atom because a strong hydrogen bond is formed.
In the present invention, since the structure change can be suppressed by having a hydrogen bond in the ligand of the iridium complex, the site involved in light emission can be immobilized, and the non-radiative transition is suppressed. can do.
The iridium complex of the present invention preferably further has interligand hydrogen bonds, intermolecular hydrogen bonds, and other interactions.
[一般式(1)で表されるイリジウム錯体]
また、本発明のイリジウム錯体は、下記一般式(1)で表される部分構造を有することが好ましい。 [Iridium Complex Represented by General Formula (1)]
The iridium complex of the present invention preferably has a partial structure represented by the following general formula (1).
また、本発明のイリジウム錯体は、下記一般式(1)で表される部分構造を有することが好ましい。 [Iridium Complex Represented by General Formula (1)]
The iridium complex of the present invention preferably has a partial structure represented by the following general formula (1).
一般式(1)中、A1及びA2は、それぞれ、芳香族炭化水素環又は芳香族複素環を表す。A3は、芳香族複素環を表す。X1、X5、X1a及びX5aは、それぞれ、窒素原子又は炭素原子を表す。X2~X4は、それぞれ、窒素原子、炭素原子、酸素原子又は硫黄原子を表す。X6は、酸素原子、窒素原子、硫黄原子、リン原子又はケイ素原子を表す。Raは、水素原子、芳香族炭化水素環基、芳香族複素環基、複素環基、アルキル基又はシクロアルキル基を表す。nは0又は1を表す。lは1~3を表す。mは0~2を表す。l+m=3である。
In General Formula (1), A 1 and A 2 each represent an aromatic hydrocarbon ring or an aromatic heterocyclic ring. A 3 represents an aromatic heterocyclic ring. X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom. X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom. X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom. Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group. n represents 0 or 1. l represents 1 to 3. m represents 0-2. l + m = 3.
一般式(1)中、イリジウム錯体におけるX1~X5で形成される環が、イミダゾール環又はトリアゾール環であることが好ましい。
In general formula (1), the ring formed by X 1 to X 5 in the iridium complex is preferably an imidazole ring or a triazole ring.
また、一般式(1)中、イリジウム錯体におけるA1が、ベンゼン環であることが好ましい。
Further, in the general formula (1), A 1 in the iridium complex is preferably a benzene ring.
[一般式(2)で表されるイリジウム錯体]
また、本発明のイリジウム錯体は、下記一般式(2)で表される部分構造を有することが好ましい。 [Iridium Complex Represented by General Formula (2)]
Moreover, it is preferable that the iridium complex of this invention has the partial structure represented by following General formula (2).
また、本発明のイリジウム錯体は、下記一般式(2)で表される部分構造を有することが好ましい。 [Iridium Complex Represented by General Formula (2)]
Moreover, it is preferable that the iridium complex of this invention has the partial structure represented by following General formula (2).
一般式(2)中、A2は、芳香族炭化水素環又は芳香族複素環を表す。A3は、X1a及びX5aを含む芳香族複素環を表す。A4は、X6を含む芳香族複素環を表す。X1、X5、X1a及びX5aは、それぞれ、窒素原子又は炭素原子を表す。X2~X4は、窒素原子、炭素原子、酸素原子又は硫黄原子を表す。X6は、酸素原子、窒素原子、硫黄原子、リン原子又はケイ素原子を表す。X7及びX8は、CRc、Nを表し、Rcは水素原子又は置換基を表す。nsは0又は1を表す。lは1~3を表す。mは0~2を表す。l+m=3である。
In General Formula (2), A 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring. A 3 represents an aromatic heterocyclic ring containing X 1a and X 5a . A 4 represents an aromatic heterocyclic ring containing X 6 . X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom. X 2 to X 4 represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom. X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom. X 7 and X 8 represent CRc and N, and Rc represents a hydrogen atom or a substituent. ns represents 0 or 1. l represents 1 to 3. m represents 0-2. l + m = 3.
[一般式(3)で表されるイリジウム錯体]
また、本発明のイリジウム錯体は、下記一般式(3)で表される部分構造を有することが好ましい。 [Iridium Complex Represented by General Formula (3)]
Moreover, it is preferable that the iridium complex of this invention has the partial structure represented by following General formula (3).
また、本発明のイリジウム錯体は、下記一般式(3)で表される部分構造を有することが好ましい。 [Iridium Complex Represented by General Formula (3)]
Moreover, it is preferable that the iridium complex of this invention has the partial structure represented by following General formula (3).
一般式(3)中、A2は、芳香族炭化水素環又は芳香族複素環を表す。A3は、芳香族複素環を表す。X1、X5、X1a及びX5aは、それぞれ、窒素原子又は炭素原子を表す。X2~X4は、それぞれ、窒素原子、炭素原子、酸素原子又は硫黄原子を表す。X6は、酸素原子、窒素原子、硫黄原子、リン原子又はケイ素原子を表す。Raは、水素原子、芳香族炭化水素環基、芳香族複素環基、複素環基、アルキル基又はシクロアルキル基を表す。R1は、電子吸引基を表す。nは0又は1を表す。lは1~3を表す。mは0~2を表す。l+m=3である。
ここで、電子吸引基としては、以下の具体例で示すイリジウム錯体D-1~D-38の構造式に含まれる電子吸引基に加え、アルコキシカルボニル基、アリールオキシカルボニル基、スルファモイル基、アシル基、アミド基、カルバモイル基、スルフィニル基、アルキルスルホニル基、アリールスルホニル基、ヘテロアリールスルホニル基、シアノ基及びニトロ基等の基も好ましく用いられる。 In General Formula (3), A 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring. A 3 represents an aromatic heterocyclic ring. X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom. X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom. X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom. Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group. R 1 represents an electron withdrawing group. n represents 0 or 1. l represents 1 to 3. m represents 0-2. l + m = 3.
Here, as the electron withdrawing group, in addition to the electron withdrawing groups included in the structural formulas of the iridium complexes D-1 to D-38 shown in the following specific examples, an alkoxycarbonyl group, an aryloxycarbonyl group, a sulfamoyl group, an acyl group Amide groups, carbamoyl groups, sulfinyl groups, alkylsulfonyl groups, arylsulfonyl groups, heteroarylsulfonyl groups, cyano groups, nitro groups, and the like are also preferably used.
ここで、電子吸引基としては、以下の具体例で示すイリジウム錯体D-1~D-38の構造式に含まれる電子吸引基に加え、アルコキシカルボニル基、アリールオキシカルボニル基、スルファモイル基、アシル基、アミド基、カルバモイル基、スルフィニル基、アルキルスルホニル基、アリールスルホニル基、ヘテロアリールスルホニル基、シアノ基及びニトロ基等の基も好ましく用いられる。 In General Formula (3), A 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring. A 3 represents an aromatic heterocyclic ring. X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom. X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom. X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom. Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group. R 1 represents an electron withdrawing group. n represents 0 or 1. l represents 1 to 3. m represents 0-2. l + m = 3.
Here, as the electron withdrawing group, in addition to the electron withdrawing groups included in the structural formulas of the iridium complexes D-1 to D-38 shown in the following specific examples, an alkoxycarbonyl group, an aryloxycarbonyl group, a sulfamoyl group, an acyl group Amide groups, carbamoyl groups, sulfinyl groups, alkylsulfonyl groups, arylsulfonyl groups, heteroarylsulfonyl groups, cyano groups, nitro groups, and the like are also preferably used.
[一般式(4)で表されるイリジウム錯体]
また、本発明のイリジウム錯体は、下記一般式(4)で表される部分構造を有することが好ましい。 [Iridium Complex Represented by General Formula (4)]
Moreover, it is preferable that the iridium complex of this invention has the partial structure represented by following General formula (4).
また、本発明のイリジウム錯体は、下記一般式(4)で表される部分構造を有することが好ましい。 [Iridium Complex Represented by General Formula (4)]
Moreover, it is preferable that the iridium complex of this invention has the partial structure represented by following General formula (4).
一般式(4)中、A2は、芳香族炭化水素環又は芳香族複素環を表す。A3は、芳香族複素環を表す。X1、X5、X1a及びX5aは、それぞれ、窒素原子又は炭素原子を表す。X2~X4は、それぞれ、窒素原子、炭素原子、酸素原子又は硫黄原子を表す。X6は、酸素原子、窒素原子、硫黄原子、リン原子又はケイ素原子を表す。Raは、水素原子、芳香族炭化水素環基、芳香族複素環基、複素環基、アルキル基又はシクロアルキル基を表す。R2は、電子供与基を表す。nは0又は1を表す。lは1~3を表す。mは0~2を表す。l+m=3である。
ここで、電子供与基としては、以下の具体例で示すイリジウム錯体D-1~D-38の構造式に含まれる電子供与基に加え、アルコキシ基、シクロアルコキシ基、アリールオキシ基、アルキルチオ基、シクロアルキルチオ基、アリールチオ基、アミノ基、ヒドロキシ基、メルカプト基及びシリル基等の基も好ましく用いられる。 In General Formula (4), A 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring. A 3 represents an aromatic heterocyclic ring. X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom. X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom. X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom. Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group. R 2 represents an electron donating group. n represents 0 or 1. l represents 1 to 3. m represents 0-2. l + m = 3.
Here, as the electron donating group, in addition to the electron donating groups included in the structural formulas of the iridium complexes D-1 to D-38 shown in the following specific examples, an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylthio group, Groups such as cycloalkylthio group, arylthio group, amino group, hydroxy group, mercapto group and silyl group are also preferably used.
ここで、電子供与基としては、以下の具体例で示すイリジウム錯体D-1~D-38の構造式に含まれる電子供与基に加え、アルコキシ基、シクロアルコキシ基、アリールオキシ基、アルキルチオ基、シクロアルキルチオ基、アリールチオ基、アミノ基、ヒドロキシ基、メルカプト基及びシリル基等の基も好ましく用いられる。 In General Formula (4), A 2 represents an aromatic hydrocarbon ring or an aromatic heterocyclic ring. A 3 represents an aromatic heterocyclic ring. X 1 , X 5 , X 1a and X 5a each represent a nitrogen atom or a carbon atom. X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom. X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom. Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group. R 2 represents an electron donating group. n represents 0 or 1. l represents 1 to 3. m represents 0-2. l + m = 3.
Here, as the electron donating group, in addition to the electron donating groups included in the structural formulas of the iridium complexes D-1 to D-38 shown in the following specific examples, an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylthio group, Groups such as cycloalkylthio group, arylthio group, amino group, hydroxy group, mercapto group and silyl group are also preferably used.
[一般式(5)で表されるイリジウム錯体]
また、本発明のイリジウム錯体は、下記一般式(5)で表される構造を有することが好ましい。 [Iridium Complex Represented by General Formula (5)]
Moreover, it is preferable that the iridium complex of this invention has a structure represented by following General formula (5).
また、本発明のイリジウム錯体は、下記一般式(5)で表される構造を有することが好ましい。 [Iridium Complex Represented by General Formula (5)]
Moreover, it is preferable that the iridium complex of this invention has a structure represented by following General formula (5).
一般式(5)中、Vは三価の連結基を表す。L1、L2及びL3と共有結合で連結している。L1~L3は、各々下記一般式(6)で表される部分構造である。
In general formula (5), V represents a trivalent linking group. It is linked to L 1 , L 2 and L 3 by a covalent bond. L 1 to L 3 are each a partial structure represented by the following general formula (6).
一般式(6)中、X1は、窒素原子又は炭素原子を表す。X2~X4は、それぞれ、窒素原子、炭素原子、酸素原子又は硫黄原子を表す。X6は、酸素原子、窒素原子、硫黄原子、リン原子又はケイ素原子を表す。Raは、水素原子、芳香族炭化水素環基、芳香族複素環基、複素環基、アルキル基又はシクロアルキル基を表す。nは0又は1を表す。*は、Vとの結合部位を表す。
In General Formula (6), X 1 represents a nitrogen atom or a carbon atom. X 2 to X 4 each represent a nitrogen atom, a carbon atom, an oxygen atom or a sulfur atom. X 6 represents an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom or a silicon atom. Ra represents a hydrogen atom, an aromatic hydrocarbon ring group, an aromatic heterocyclic group, a heterocyclic group, an alkyl group or a cycloalkyl group. n represents 0 or 1. * Represents a binding site to V.
一般式(1)~(6)で表される部分構造及び構造に含まれる芳香族環は、更に置換基を有していても良く、当該置換基が他の基と結合して縮合環を形成していても良い。置換基としては、例えば、アルキル基(例えば、メチル基、エチル基、トリフルオロメチル基、イソプロピル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基等)、ハロゲン原子(例えば、フッ素原子等)、ニトロ基、ジアルキルアミノ基(例えば、ジメチルアミノ基等)、トリアルキルシリル基(例えば、トリメチルシリル等)、トリアリールシリル基(例えば、トリフェニルシリル基等)、トリヘテロアリールシリル基(例えば、トリピリジルシリル基等)、ベンジル基、アリール基(例えば、フェニル基等)、ヘテロアリール基(例えば、ピリジル基、カルバゾリル基等)等が挙げられる。
The partial structure represented by the general formulas (1) to (6) and the aromatic ring contained in the structure may further have a substituent, and the substituent is bonded to another group to form a condensed ring. It may be formed. Examples of the substituent include an alkyl group (for example, a methyl group, an ethyl group, a trifluoromethyl group, and an isopropyl group), an alkoxy group (for example, a methoxy group and an ethoxy group), and a halogen atom (for example, a fluorine atom). , Nitro group, dialkylamino group (for example, dimethylamino group), trialkylsilyl group (for example, trimethylsilyl group), triarylsilyl group (for example, triphenylsilyl group), triheteroarylsilyl group (for example, triphenylsilyl group) Pyridylsilyl group etc.), benzyl group, aryl group (eg phenyl group etc.), heteroaryl group (eg pyridyl group, carbazolyl group etc.) and the like.
[イリジウム錯体の具体例]
以下、本発明の一般式(1)~(6)で表される構造の少なくとも一つを含むイリジウム錯体の具体例を示すが本発明はこれに限定されない。なお、H…Yの「…」が、配位子内の水素結合を表している。また、これらの化合物例については、さらに置換基を有してもよく、当該置換基は、一般式(1)~(6)で用いられる置換基と同義である。これらの具体例に示す本発明のイリジウム錯体については、機能を阻害しない程度に更に置換基を有することも好ましい。 [Specific examples of iridium complexes]
Hereinafter, specific examples of the iridium complex including at least one of the structures represented by the general formulas (1) to (6) of the present invention will be shown, but the present invention is not limited thereto. In addition, "..." of H ... Y represents a hydrogen bond in the ligand. These compound examples may further have a substituent, and the substituent is synonymous with the substituent used in the general formulas (1) to (6). About the iridium complex of this invention shown in these specific examples, it is also preferable to have a substituent further to such an extent that a function is not inhibited.
以下、本発明の一般式(1)~(6)で表される構造の少なくとも一つを含むイリジウム錯体の具体例を示すが本発明はこれに限定されない。なお、H…Yの「…」が、配位子内の水素結合を表している。また、これらの化合物例については、さらに置換基を有してもよく、当該置換基は、一般式(1)~(6)で用いられる置換基と同義である。これらの具体例に示す本発明のイリジウム錯体については、機能を阻害しない程度に更に置換基を有することも好ましい。 [Specific examples of iridium complexes]
Hereinafter, specific examples of the iridium complex including at least one of the structures represented by the general formulas (1) to (6) of the present invention will be shown, but the present invention is not limited thereto. In addition, "..." of H ... Y represents a hydrogen bond in the ligand. These compound examples may further have a substituent, and the substituent is synonymous with the substituent used in the general formulas (1) to (6). About the iridium complex of this invention shown in these specific examples, it is also preferable to have a substituent further to such an extent that a function is not inhibited.
[水素原子の解離エネルギー]
本発明のイリジウム錯体は、米国Gaussian社製の分子軌道計算用ソフトウェアであるGaussian03(Gaussian98、Revision C.11.4,M.J.Frisch,et al,Gaussian,Inc.,Pittsburgh PA,2002.)を用い、キーワードとしてB3LYP/6-31G*を用いて構造最適化を行い、この最適構造を用いて、6-311++G(2df、2p)をキーワードとして、一点計算を行い、水素原子の解離エネルギーを求めた。
水素原子の解離エネルギー(ΔG): X-H→X-+H+
具体的には、“X-H”及び“X-”について、上記のGaussian計算を用いて、構造最適化を行い、それぞれのエネルギーを算出する。この値を使い、X-H→X-(中性化合物とアニオン化合物のエネルギー差)から解離エネルギーとした。
本発明のイリジウム錯体の配位子内の水素結合を形成する水素原子の解離エネルギーは、390kJ/mol以下であることが好ましく、375kJ/mol以下であることがより好ましく、360kJ/mol以下であることが特に好ましい。算出した解離エネルギーを表1に示す。 [Dissociation energy of hydrogen atom]
The iridium complex of the present invention is Gaussian 03 (Gaussian 98, Revision C.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.), which is software for molecular orbital calculation manufactured by Gaussian, USA. Using B3LYP / 6-31G * as a keyword, structural optimization is performed, and using this optimal structure, 6-311 ++ G (2df, 2p) is used as a keyword to perform one-point calculation, and the dissociation energy of the hydrogen atom is calculated. Asked.
Dissociation energy of hydrogen atom (ΔG): XH → X − + H +
Specifically, for “XH” and “X − ”, the structure is optimized using the above Gaussian calculation, and the respective energies are calculated. This value was used as the dissociation energy from XH → X − (energy difference between neutral compound and anion compound).
The dissociation energy of a hydrogen atom that forms a hydrogen bond in the ligand of the iridium complex of the present invention is preferably 390 kJ / mol or less, more preferably 375 kJ / mol or less, and 360 kJ / mol or less. It is particularly preferred. Table 1 shows the calculated dissociation energy.
本発明のイリジウム錯体は、米国Gaussian社製の分子軌道計算用ソフトウェアであるGaussian03(Gaussian98、Revision C.11.4,M.J.Frisch,et al,Gaussian,Inc.,Pittsburgh PA,2002.)を用い、キーワードとしてB3LYP/6-31G*を用いて構造最適化を行い、この最適構造を用いて、6-311++G(2df、2p)をキーワードとして、一点計算を行い、水素原子の解離エネルギーを求めた。
水素原子の解離エネルギー(ΔG): X-H→X-+H+
具体的には、“X-H”及び“X-”について、上記のGaussian計算を用いて、構造最適化を行い、それぞれのエネルギーを算出する。この値を使い、X-H→X-(中性化合物とアニオン化合物のエネルギー差)から解離エネルギーとした。
本発明のイリジウム錯体の配位子内の水素結合を形成する水素原子の解離エネルギーは、390kJ/mol以下であることが好ましく、375kJ/mol以下であることがより好ましく、360kJ/mol以下であることが特に好ましい。算出した解離エネルギーを表1に示す。 [Dissociation energy of hydrogen atom]
The iridium complex of the present invention is Gaussian 03 (Gaussian 98, Revision C.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.), which is software for molecular orbital calculation manufactured by Gaussian, USA. Using B3LYP / 6-31G * as a keyword, structural optimization is performed, and using this optimal structure, 6-311 ++ G (2df, 2p) is used as a keyword to perform one-point calculation, and the dissociation energy of the hydrogen atom is calculated. Asked.
Dissociation energy of hydrogen atom (ΔG): XH → X − + H +
Specifically, for “XH” and “X − ”, the structure is optimized using the above Gaussian calculation, and the respective energies are calculated. This value was used as the dissociation energy from XH → X − (energy difference between neutral compound and anion compound).
The dissociation energy of a hydrogen atom that forms a hydrogen bond in the ligand of the iridium complex of the present invention is preferably 390 kJ / mol or less, more preferably 375 kJ / mol or less, and 360 kJ / mol or less. It is particularly preferred. Table 1 shows the calculated dissociation energy.
前記水素結合を形成する水素原子の解離エネルギーが、390kJ/mol以下であることが、配位子の構造変化を抑制することができる水素結合であるため好ましい。
It is preferable that the dissociation energy of the hydrogen atom forming the hydrogen bond is 390 kJ / mol or less because the hydrogen bond can suppress the structural change of the ligand.
[イリジウム錯体の合成例]
以下に、本発明のイリジウム錯体の合成例について説明するが、本発明はこれに限定されるものではない。上記した具体例のうちイリジウム錯体D-1の合成方法を例にとって説明する。 [Synthesis example of iridium complex]
Although the synthesis example of the iridium complex of this invention is demonstrated below, this invention is not limited to this. Of the specific examples described above, a method for synthesizing the iridium complex D-1 will be described as an example.
以下に、本発明のイリジウム錯体の合成例について説明するが、本発明はこれに限定されるものではない。上記した具体例のうちイリジウム錯体D-1の合成方法を例にとって説明する。 [Synthesis example of iridium complex]
Although the synthesis example of the iridium complex of this invention is demonstrated below, this invention is not limited to this. Of the specific examples described above, a method for synthesizing the iridium complex D-1 will be described as an example.
(工程1)
三口フラスコに、中間体Aを2.0g、塩化イリジウムを1.2g、エトキシエタノールを45ml、水を15ml入れ、窒素雰囲気下にて100℃で4時間加熱撹拌した。
析出した結晶をろ取し、ろ取した結晶をメタノール洗浄して、中間体Bを1.9g得た。 (Process 1)
A three-necked flask was charged with 2.0 g of intermediate A, 1.2 g of iridium chloride, 45 ml of ethoxyethanol, and 15 ml of water, and the mixture was heated and stirred at 100 ° C. for 4 hours in a nitrogen atmosphere.
The precipitated crystals were collected by filtration, and the collected crystals were washed with methanol to obtain 1.9 g of Intermediate B.
三口フラスコに、中間体Aを2.0g、塩化イリジウムを1.2g、エトキシエタノールを45ml、水を15ml入れ、窒素雰囲気下にて100℃で4時間加熱撹拌した。
析出した結晶をろ取し、ろ取した結晶をメタノール洗浄して、中間体Bを1.9g得た。 (Process 1)
A three-necked flask was charged with 2.0 g of intermediate A, 1.2 g of iridium chloride, 45 ml of ethoxyethanol, and 15 ml of water, and the mixture was heated and stirred at 100 ° C. for 4 hours in a nitrogen atmosphere.
The precipitated crystals were collected by filtration, and the collected crystals were washed with methanol to obtain 1.9 g of Intermediate B.
(工程2)
三口フラスコに、工程1で得られた中間体Bを1.8g、アセチルアセトンを0.52g、炭酸カリウムを1.8g、エトキシエタノールを50ml入れ、窒素雰囲気下にて80℃で5時間加熱撹拌した。
析出した結晶をろ取し、ろ取した結晶をメタノール洗浄した後、水洗し、中間体Cを0.96g得た。 (Process 2)
In a three-necked flask, 1.8 g of Intermediate B obtained in Step 1, 0.52 g of acetylacetone, 1.8 g of potassium carbonate, and 50 ml of ethoxyethanol were placed and stirred with heating at 80 ° C. for 5 hours in a nitrogen atmosphere. .
The precipitated crystals were collected by filtration, and the collected crystals were washed with methanol and then washed with water to obtain 0.96 g of Intermediate C.
三口フラスコに、工程1で得られた中間体Bを1.8g、アセチルアセトンを0.52g、炭酸カリウムを1.8g、エトキシエタノールを50ml入れ、窒素雰囲気下にて80℃で5時間加熱撹拌した。
析出した結晶をろ取し、ろ取した結晶をメタノール洗浄した後、水洗し、中間体Cを0.96g得た。 (Process 2)
In a three-necked flask, 1.8 g of Intermediate B obtained in Step 1, 0.52 g of acetylacetone, 1.8 g of potassium carbonate, and 50 ml of ethoxyethanol were placed and stirred with heating at 80 ° C. for 5 hours in a nitrogen atmosphere. .
The precipitated crystals were collected by filtration, and the collected crystals were washed with methanol and then washed with water to obtain 0.96 g of Intermediate C.
(工程3)
三口フラスコに、工程2で得られた中間体Cを0.5g、中間体Aを0.46g、エチレングリコールを50ml入れ、窒素雰囲気下にて150℃で7時間加熱撹拌した。
析出した結晶をろ取し、ろ取した結晶をメタノール洗浄した後、シリカゲルクロマトグラフィーで分離精製し、D-1を0.2g得た。 (Process 3)
In a three-necked flask, 0.5 g of Intermediate C obtained in Step 2, 0.46 g of Intermediate A, and 50 ml of ethylene glycol were placed, and the mixture was heated and stirred at 150 ° C. for 7 hours in a nitrogen atmosphere.
The precipitated crystals were collected by filtration, washed with methanol, and then separated and purified by silica gel chromatography to obtain 0.2 g of D-1.
三口フラスコに、工程2で得られた中間体Cを0.5g、中間体Aを0.46g、エチレングリコールを50ml入れ、窒素雰囲気下にて150℃で7時間加熱撹拌した。
析出した結晶をろ取し、ろ取した結晶をメタノール洗浄した後、シリカゲルクロマトグラフィーで分離精製し、D-1を0.2g得た。 (Process 3)
In a three-necked flask, 0.5 g of Intermediate C obtained in Step 2, 0.46 g of Intermediate A, and 50 ml of ethylene glycol were placed, and the mixture was heated and stirred at 150 ° C. for 7 hours in a nitrogen atmosphere.
The precipitated crystals were collected by filtration, washed with methanol, and then separated and purified by silica gel chromatography to obtain 0.2 g of D-1.
イリジウム錯体D-1の構造は、マススペクトル及び1H-NMRで確認した。
MASS spectrum(ESI):m/z=893[M+]
1H-NMR(CD2Cl2,400MHz)δ:7.71(2H,d,J=28.3Hz) The structure of the iridium complex D-1 was confirmed by mass spectrum and 1 H-NMR.
MASS spectrum (ESI): m / z = 893 [M + ]
1 H-NMR (CD 2 Cl 2 , 400 MHz) δ: 7.71 (2H, d, J = 28.3 Hz)
MASS spectrum(ESI):m/z=893[M+]
1H-NMR(CD2Cl2,400MHz)δ:7.71(2H,d,J=28.3Hz) The structure of the iridium complex D-1 was confirmed by mass spectrum and 1 H-NMR.
MASS spectrum (ESI): m / z = 893 [M + ]
1 H-NMR (CD 2 Cl 2 , 400 MHz) δ: 7.71 (2H, d, J = 28.3 Hz)
[一般的な合成方法]
また、中間体Aと類似の構造を有する化合物を用いて、下記イリジウム錯体の合成を以下の方法により試みたところ合成することができなかった。 [General synthesis method]
Moreover, when the synthesis | combination of the following iridium complex was tried by the following method using the compound which has a structure similar to the intermediate body A, it was not able to synthesize | combine.
また、中間体Aと類似の構造を有する化合物を用いて、下記イリジウム錯体の合成を以下の方法により試みたところ合成することができなかった。 [General synthesis method]
Moreover, when the synthesis | combination of the following iridium complex was tried by the following method using the compound which has a structure similar to the intermediate body A, it was not able to synthesize | combine.
三口フラスコに4-フェニルイミダゾール3.8g(26.3mmol)、IrCl3水和物(Strem Chemicals製)1.96g(6.6mmol)を入れ、アルゴン置換した。
次に、2-エトキシエタノール30mlを三口フラスコに入れ、還流下18時間反応させたところ、沈殿物はなく、均一の黒褐色の溶液となった。溶媒を留去させ、溶液を処理したところ、黒色固形物が得られたが、目的のIr錯体は確認できなかった。 Three-necked flask 4-phenyl imidazole 3.8 g (26.3 mmol), placed IrCl 3 hydrate (manufactured by Strem Chemicals) 1.96g (6.6mmol), was replaced with argon.
Next, 30 ml of 2-ethoxyethanol was placed in a three-necked flask and reacted for 18 hours under reflux. As a result, there was no precipitate and a uniform black-brown solution was obtained. When the solvent was distilled off and the solution was treated, a black solid was obtained, but the target Ir complex could not be confirmed.
次に、2-エトキシエタノール30mlを三口フラスコに入れ、還流下18時間反応させたところ、沈殿物はなく、均一の黒褐色の溶液となった。溶媒を留去させ、溶液を処理したところ、黒色固形物が得られたが、目的のIr錯体は確認できなかった。 Three-necked flask 4-phenyl imidazole 3.8 g (26.3 mmol), placed IrCl 3 hydrate (manufactured by Strem Chemicals) 1.96g (6.6mmol), was replaced with argon.
Next, 30 ml of 2-ethoxyethanol was placed in a three-necked flask and reacted for 18 hours under reflux. As a result, there was no precipitate and a uniform black-brown solution was obtained. When the solvent was distilled off and the solution was treated, a black solid was obtained, but the target Ir complex could not be confirmed.
(1.2)蛍光ドーパント
蛍光ドーパントとしては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、又は希土類錯体系蛍光体等や、レーザー色素に代表される蛍光量子収率が高い化合物が挙げられる。 (1.2) Fluorescent dopant Examples of fluorescent dopants include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, Examples include perylene dyes, stilbene dyes, polythiophene dyes, rare-earth complex phosphors, and compounds having high fluorescence quantum yields typified by laser dyes.
蛍光ドーパントとしては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、又は希土類錯体系蛍光体等や、レーザー色素に代表される蛍光量子収率が高い化合物が挙げられる。 (1.2) Fluorescent dopant Examples of fluorescent dopants include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, Examples include perylene dyes, stilbene dyes, polythiophene dyes, rare-earth complex phosphors, and compounds having high fluorescence quantum yields typified by laser dyes.
[従来公知のドーパントとの併用]
また、本発明に用いられる発光ドーパントは、複数種の化合物を併用して用いてもよく、構造の異なるリン光ドーパント同士の組み合わせや、リン光ドーパントと蛍光ドーパントを組み合わせて用いてもよい。
ここで、発光ドーパントとして、従来公知の発光ドーパントを本発明のイリジウム錯体と併用して用いてもよい。具体的には、国際公開第2013/061850号に記載の化合物を好適に用いることができるが、本発明はこれらに限定されない。 [Combination with conventionally known dopants]
In addition, the light emitting dopant used in the present invention may be used in combination of a plurality of types of compounds, a combination of phosphorescent dopants having different structures, or a combination of a phosphorescent dopant and a fluorescent dopant.
Here, as the luminescent dopant, a conventionally known luminescent dopant may be used in combination with the iridium complex of the present invention. Specifically, the compounds described in International Publication No. 2013/061850 can be preferably used, but the present invention is not limited thereto.
また、本発明に用いられる発光ドーパントは、複数種の化合物を併用して用いてもよく、構造の異なるリン光ドーパント同士の組み合わせや、リン光ドーパントと蛍光ドーパントを組み合わせて用いてもよい。
ここで、発光ドーパントとして、従来公知の発光ドーパントを本発明のイリジウム錯体と併用して用いてもよい。具体的には、国際公開第2013/061850号に記載の化合物を好適に用いることができるが、本発明はこれらに限定されない。 [Combination with conventionally known dopants]
In addition, the light emitting dopant used in the present invention may be used in combination of a plurality of types of compounds, a combination of phosphorescent dopants having different structures, or a combination of a phosphorescent dopant and a fluorescent dopant.
Here, as the luminescent dopant, a conventionally known luminescent dopant may be used in combination with the iridium complex of the present invention. Specifically, the compounds described in International Publication No. 2013/061850 can be preferably used, but the present invention is not limited thereto.
[ホスト化合物]
本発明に用いることができるホスト化合物(発光ホスト、発光ホスト化合物ともいう。)は、発光層に含有される化合物の内で、その層中での質量比が20%以上であり、かつ室温(25℃)においてリン光発光のリン光量子収率が、0.1未満の化合物と定義される。好ましくはリン光量子収率が0.01未満である。また、発光層に含有される化合物の中で、その層中での質量比が20%以上であることが好ましい。 [Host compound]
A host compound (also referred to as a light-emitting host or a light-emitting host compound) that can be used in the present invention has a mass ratio in the layer of 20% or more among the compounds contained in the light-emitting layer, and a room temperature ( 25 ° C.) is defined as a compound having a phosphorescence quantum yield of phosphorescence of less than 0.1. The phosphorescence quantum yield is preferably less than 0.01. Moreover, it is preferable that the mass ratio in the layer is 20% or more among the compounds contained in a light emitting layer.
本発明に用いることができるホスト化合物(発光ホスト、発光ホスト化合物ともいう。)は、発光層に含有される化合物の内で、その層中での質量比が20%以上であり、かつ室温(25℃)においてリン光発光のリン光量子収率が、0.1未満の化合物と定義される。好ましくはリン光量子収率が0.01未満である。また、発光層に含有される化合物の中で、その層中での質量比が20%以上であることが好ましい。 [Host compound]
A host compound (also referred to as a light-emitting host or a light-emitting host compound) that can be used in the present invention has a mass ratio in the layer of 20% or more among the compounds contained in the light-emitting layer, and a room temperature ( 25 ° C.) is defined as a compound having a phosphorescence quantum yield of phosphorescence of less than 0.1. The phosphorescence quantum yield is preferably less than 0.01. Moreover, it is preferable that the mass ratio in the layer is 20% or more among the compounds contained in a light emitting layer.
本発明に用いることができるホスト化合物としては、特に制限はなく、従来有機EL素子で用いられる化合物を用いることができる。代表的にはカルバゾール誘導体、トリアリールアミン誘導体、芳香族誘導体、含窒素複素環化合物、チオフェン誘導体、フラン誘導体、オリゴアリーレン化合物等の基本骨格を有するもの、又は、カルボリン誘導体やジアザカルバゾール誘導体(ここで、ジアザカルバゾール誘導体とは、カルボリン誘導体のカルボリン環を構成する炭化水素環の少なくとも一つの炭素原子が窒素原子で置換されているものを表す。)等が挙げられる。
The host compound that can be used in the present invention is not particularly limited, and compounds conventionally used in organic EL devices can be used. Typically, a carbazole derivative, a triarylamine derivative, an aromatic derivative, a nitrogen-containing heterocyclic compound, a thiophene derivative, a furan derivative, an oligoarylene compound or the like having a basic skeleton, or a carboline derivative or a diazacarbazole derivative (here And the diazacarbazole derivative represents one in which at least one carbon atom of the hydrocarbon ring constituting the carboline ring of the carboline derivative is substituted with a nitrogen atom.
本発明に用いることができる公知のホスト化合物としては正孔輸送能、電子輸送能を有しつつ、かつ、発光の長波長化を防ぎ、なおかつ高Tg(ガラス転移温度)である化合物が好ましい。
また、本発明においては、従来公知のホスト化合物を単独で用いてもよく、又は複数種併用して用いてもよい。ホスト化合物を複数種用いることで、電荷の移動を調整することが可能であり、有機EL素子を高効率化することができる。また、前記リン光ドーパントとして用いられる本発明のイリジウム錯体及び/又は従来公知の化合物を複数種用いることで、異なる発光を混ぜることが可能となり、これにより任意の発光色を得ることができる。 As the known host compound that can be used in the present invention, a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from being increased in wavelength, and has a high Tg (glass transition temperature) is preferable.
Moreover, in this invention, a conventionally well-known host compound may be used independently, and may be used in combination of multiple types. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient. Moreover, it becomes possible to mix different light emission by using multiple types of the iridium complex of this invention used as the said phosphorescence dopant, and / or a conventionally well-known compound, and, thereby, arbitrary luminescent colors can be obtained.
また、本発明においては、従来公知のホスト化合物を単独で用いてもよく、又は複数種併用して用いてもよい。ホスト化合物を複数種用いることで、電荷の移動を調整することが可能であり、有機EL素子を高効率化することができる。また、前記リン光ドーパントとして用いられる本発明のイリジウム錯体及び/又は従来公知の化合物を複数種用いることで、異なる発光を混ぜることが可能となり、これにより任意の発光色を得ることができる。 As the known host compound that can be used in the present invention, a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from being increased in wavelength, and has a high Tg (glass transition temperature) is preferable.
Moreover, in this invention, a conventionally well-known host compound may be used independently, and may be used in combination of multiple types. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient. Moreover, it becomes possible to mix different light emission by using multiple types of the iridium complex of this invention used as the said phosphorescence dopant, and / or a conventionally well-known compound, and, thereby, arbitrary luminescent colors can be obtained.
また、本発明に用いられるホスト化合物としては、低分子化合物でも、繰り返し単位をもつ高分子化合物でもよく、ビニル基やエポキシ基のような重合性基を有する低分子化合物(重合性ホスト化合物)でもよく、このような化合物を1種又は複数種用いても良い。
The host compound used in the present invention may be a low molecular compound, a high molecular compound having a repeating unit, or a low molecular compound (polymerizable host compound) having a polymerizable group such as a vinyl group or an epoxy group. Of course, one or more of such compounds may be used.
公知のホスト化合物の具体例としては、以下の文献に記載の化合物が挙げられる。
特開2001-257076号公報、同2002-308855号公報、同2001-313179号公報、同2002-319491号公報、同2001-357977号公報、同2002-334786号公報、同2002-8860号公報、同2002-334787号公報、同2002-15871号公報、同2002-334788号公報、同2002-43056号公報、同2002-334789号公報、同2002-75645号公報、同2002-338579号公報、同2002-105445号公報、同2002-343568号公報、同2002-141173号公報、同2002-352957号公報、同2002-203683号公報、同2002-363227号公報、同2002-231453号公報、同2003-3165号公報、同2002-234888号公報、同2003-27048号公報、同2002-255934号公報、同2002-260861号公報、同2002-280183号公報、同2002-299060号公報、同2002-302516号公報、同2002-305083号公報、同2002-305084号公報、同2002-308837号公報等である。 Specific examples of known host compounds include compounds described in the following documents.
JP-A-2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, 2002-334786, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645, 2002-338579, 2002-105445 gazette, 2002-343568 gazette, 2002-141173 gazette, 2002-352957 gazette, 2002-203683 gazette, 2002-363227 gazette, 2002-231453 gazette, No. 003-3165, No. 2002-234888, No. 2003-27048, No. 2002-255934, No. 2002-260861, No. 2002-280183, No. 2002-299060, No. 2002. -302516, 2002-305083, 2002-305084, 2002-308837, and the like.
特開2001-257076号公報、同2002-308855号公報、同2001-313179号公報、同2002-319491号公報、同2001-357977号公報、同2002-334786号公報、同2002-8860号公報、同2002-334787号公報、同2002-15871号公報、同2002-334788号公報、同2002-43056号公報、同2002-334789号公報、同2002-75645号公報、同2002-338579号公報、同2002-105445号公報、同2002-343568号公報、同2002-141173号公報、同2002-352957号公報、同2002-203683号公報、同2002-363227号公報、同2002-231453号公報、同2003-3165号公報、同2002-234888号公報、同2003-27048号公報、同2002-255934号公報、同2002-260861号公報、同2002-280183号公報、同2002-299060号公報、同2002-302516号公報、同2002-305083号公報、同2002-305084号公報、同2002-308837号公報等である。 Specific examples of known host compounds include compounds described in the following documents.
JP-A-2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, 2002-334786, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645, 2002-338579, 2002-105445 gazette, 2002-343568 gazette, 2002-141173 gazette, 2002-352957 gazette, 2002-203683 gazette, 2002-363227 gazette, 2002-231453 gazette, No. 003-3165, No. 2002-234888, No. 2003-27048, No. 2002-255934, No. 2002-260861, No. 2002-280183, No. 2002-299060, No. 2002. -302516, 2002-305083, 2002-305084, 2002-308837, and the like.
以下、本発明の有機EL素子の発光層のホスト化合物として用いられる具体例を挙げるが、本発明はこれらに限定されない。なお、以下に示したホスト化合物については機能を阻害しない程度に更に置換基を有することも好ましい。
Hereinafter, although the specific example used as a host compound of the light emitting layer of the organic EL element of this invention is given, this invention is not limited to these. In addition, about the host compound shown below, it is also preferable to have a substituent further to such an extent that a function is not inhibited.
《電子輸送層》
電子輸送層とは電子を輸送する機能を有する材料からなり、広い意味で電子注入層、正孔阻止層も電子輸送層に含まれる。電子輸送層は単層若しくは複数層を設けることができる。
電子輸送層は陰極より注入された電子を発光層に伝達する機能を有していればよく、電子輸送層の構成材料としては従来公知の化合物の中から任意のものを選択し併用することも可能である。 《Electron transport layer》
The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer. The electron transport layer can be provided with a single layer or a plurality of layers.
The electron transport layer only needs to have a function of transmitting electrons injected from the cathode to the light emitting layer. As a constituent material of the electron transport layer, any conventionally known compound may be selected and used in combination. Is possible.
電子輸送層とは電子を輸送する機能を有する材料からなり、広い意味で電子注入層、正孔阻止層も電子輸送層に含まれる。電子輸送層は単層若しくは複数層を設けることができる。
電子輸送層は陰極より注入された電子を発光層に伝達する機能を有していればよく、電子輸送層の構成材料としては従来公知の化合物の中から任意のものを選択し併用することも可能である。 《Electron transport layer》
The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer. The electron transport layer can be provided with a single layer or a plurality of layers.
The electron transport layer only needs to have a function of transmitting electrons injected from the cathode to the light emitting layer. As a constituent material of the electron transport layer, any conventionally known compound may be selected and used in combination. Is possible.
電子輸送層に用いられる従来公知の材料(以下、電子輸送材料という。)の例としては、ニトロ置換フルオレン誘導体、ジフェニルキノン誘導体、チオピランジオキシド誘導体、ナフタレンペリレン等の多環芳香族炭化水素、複素環テトラカルボン酸無水物、カルボジイミド、フレオレニリデンメタン誘導体、アントラキノジメタン及びアントロン誘導体、オキサジアゾール誘導体、カルボリン誘導体、又は、該カルボリン誘導体のカルボリン環を構成する炭化水素環の炭素原子の少なくとも一つが窒素原子で置換されている環構造を有する誘導体、ヘキサアザトリフェニレン誘導体等が挙げられる。
更に、上記オキサジアゾール誘導体において、オキサジアゾール環の酸素原子を硫黄原子に置換したチアジアゾール誘導体、電子吸引性基として知られているキノキサリン環を有するキノキサリン誘導体も電子輸送材料として用いることができる。
これらの材料を高分子鎖に導入した、又はこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。 Examples of conventionally known materials used for the electron transport layer (hereinafter referred to as electron transport materials) include polycyclic aromatic hydrocarbons such as nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, naphthalene perylene, Heterocyclic tetracarboxylic anhydride, carbodiimide, fluorenylidenemethane derivative, anthraquinodimethane and anthrone derivative, oxadiazole derivative, carboline derivative, or carbon atom of the hydrocarbon ring constituting the carboline ring of the carboline derivative Derivatives having a ring structure in which at least one is substituted with a nitrogen atom, hexaazatriphenylene derivatives, and the like can be mentioned.
Furthermore, in the oxadiazole derivative, a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron-withdrawing group can also be used as an electron transport material.
It is also possible to use a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain.
更に、上記オキサジアゾール誘導体において、オキサジアゾール環の酸素原子を硫黄原子に置換したチアジアゾール誘導体、電子吸引性基として知られているキノキサリン環を有するキノキサリン誘導体も電子輸送材料として用いることができる。
これらの材料を高分子鎖に導入した、又はこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。 Examples of conventionally known materials used for the electron transport layer (hereinafter referred to as electron transport materials) include polycyclic aromatic hydrocarbons such as nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, naphthalene perylene, Heterocyclic tetracarboxylic anhydride, carbodiimide, fluorenylidenemethane derivative, anthraquinodimethane and anthrone derivative, oxadiazole derivative, carboline derivative, or carbon atom of the hydrocarbon ring constituting the carboline ring of the carboline derivative Derivatives having a ring structure in which at least one is substituted with a nitrogen atom, hexaazatriphenylene derivatives, and the like can be mentioned.
Furthermore, in the oxadiazole derivative, a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron-withdrawing group can also be used as an electron transport material.
It is also possible to use a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain.
また、8-キノリノール誘導体の金属錯体、例えば、トリス(8-キノリノール)アルミニウム(Alq)、トリス(5,7-ジクロロ-8-キノリノール)アルミニウム、トリス(5,7-ジブロモ-8-キノリノール)アルミニウム、トリス(2-メチル-8-キノリノール)アルミニウム、トリス(5-メチル-8-キノリノール)アルミニウム、ビス(8-キノリノール)亜鉛(Znq)等、及びこれらの金属錯体の中心金属がIn、Mg、Cu、Ca、Sn、Ga又はPbに置き替わった金属錯体も電子輸送材料として用いることができる。
その他、メタルフリー若しくはメタルフタロシアニン、又はそれらの末端がアルキル基やスルホン酸基等で置換されているものも電子輸送材料として用いることができる。
また、n型-Si、n型-SiC等の無機半導体も電子輸送材料として用いることができる。 In addition, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metals of these metal complexes are In, Mg, Metal complexes replaced with Cu, Ca, Sn, Ga, or Pb can also be used as the electron transport material.
In addition, metal-free or metal phthalocyanine, or those having a terminal substituted with an alkyl group or a sulfonic acid group can be used as the electron transport material.
An inorganic semiconductor such as n-type-Si and n-type-SiC can also be used as an electron transport material.
その他、メタルフリー若しくはメタルフタロシアニン、又はそれらの末端がアルキル基やスルホン酸基等で置換されているものも電子輸送材料として用いることができる。
また、n型-Si、n型-SiC等の無機半導体も電子輸送材料として用いることができる。 In addition, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metals of these metal complexes are In, Mg, Metal complexes replaced with Cu, Ca, Sn, Ga, or Pb can also be used as the electron transport material.
In addition, metal-free or metal phthalocyanine, or those having a terminal substituted with an alkyl group or a sulfonic acid group can be used as the electron transport material.
An inorganic semiconductor such as n-type-Si and n-type-SiC can also be used as an electron transport material.
電子輸送層は電子輸送材料を、例えば、真空蒸着法、湿式法(ウェットプロセスともいい、例えば、スピンコート法、キャスト法、ダイコート法、ブレードコート法、ロールコート法、インクジェット法、印刷法、スプレーコート法、カーテンコート法、LB法(ラングミュア・ブロジェット(Langmuir Blodgett法)等を挙げることができる。))等により、薄膜化することで形成することが好ましい。
The electron transport layer is made of an electron transport material such as a vacuum deposition method, a wet method (also referred to as a wet process, such as a spin coating method, a casting method, a die coating method, a blade coating method, a roll coating method, an ink jet method, a printing method, or a spraying method. The film is preferably formed by thinning by a coating method, curtain coating method, LB method (Langmuir Brodgett method, etc.).
電子輸送層の層厚については特に制限はないが、通常は5~5000nm程度、好ましくは5~200nmである。この電子輸送層は上記材料の1種又は2種以上からなる1層構造であってもよい。
また、金属錯体やハロゲン化金属など金属化合物等のn型ドーパントをドープして用いてもよい。 The thickness of the electron transport layer is not particularly limited, but is usually about 5 to 5000 nm, preferably 5 to 200 nm. The electron transport layer may have a single layer structure composed of one or more of the above materials.
Further, an n-type dopant such as a metal compound such as a metal complex or a metal halide may be doped.
また、金属錯体やハロゲン化金属など金属化合物等のn型ドーパントをドープして用いてもよい。 The thickness of the electron transport layer is not particularly limited, but is usually about 5 to 5000 nm, preferably 5 to 200 nm. The electron transport layer may have a single layer structure composed of one or more of the above materials.
Further, an n-type dopant such as a metal compound such as a metal complex or a metal halide may be doped.
本発明の有機EL素子の電子輸送層の形成に好ましく用いられる従来公知の電子輸送材料の一例として、国際公開第2013/061850号に記載の化合物を好適に用いることができるが、本発明はこれらに限定されない。
As an example of a conventionally known electron transport material preferably used for forming the electron transport layer of the organic EL device of the present invention, the compounds described in International Publication No. 2013/061850 can be preferably used. It is not limited to.
《陰極》
一方、陰極としては仕事関数の小さい(4eV以下)金属(電子注入性金属と称する。)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム-カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。 "cathode"
On the other hand, as the cathode, a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like. Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred.
一方、陰極としては仕事関数の小さい(4eV以下)金属(電子注入性金属と称する。)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム-カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。 "cathode"
On the other hand, as the cathode, a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like. Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred.
陰極はこれらの電極物質を蒸着やスパッタリング等の方法で薄膜を形成させることにより、作製することができる。また、陰極としてのシート抵抗は数百Ω/□以下が好ましく、膜厚は通常10nm~5μm、好ましくは50~200nmの範囲で選ばれる。
なお、発光した光を透過させるため、有機EL素子の陽極又は陰極のいずれか一方が透明又は半透明であれば発光輝度が向上し好都合である。
また、陰極に上記金属を1~20nmの膜厚で作製した後に、後述する陽極の説明で挙げる導電性透明材料をその上に作製することで、透明又は半透明の陰極を作製することができ、これを応用することで陽極と陰極の両方が透過性を有する素子を作製することができる。 The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet resistance as the cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 to 200 nm.
In order to transmit the emitted light, if either one of the anode or the cathode of the organic EL element is transparent or translucent, the emission luminance is advantageously improved.
In addition, a transparent or semi-transparent cathode can be produced by producing a conductive transparent material, which will be described later in the description of the anode, after producing the above metal with a thickness of 1 to 20 nm on the cathode. By applying this, an element in which both the anode and the cathode are transmissive can be manufactured.
なお、発光した光を透過させるため、有機EL素子の陽極又は陰極のいずれか一方が透明又は半透明であれば発光輝度が向上し好都合である。
また、陰極に上記金属を1~20nmの膜厚で作製した後に、後述する陽極の説明で挙げる導電性透明材料をその上に作製することで、透明又は半透明の陰極を作製することができ、これを応用することで陽極と陰極の両方が透過性を有する素子を作製することができる。 The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet resistance as the cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 to 200 nm.
In order to transmit the emitted light, if either one of the anode or the cathode of the organic EL element is transparent or translucent, the emission luminance is advantageously improved.
In addition, a transparent or semi-transparent cathode can be produced by producing a conductive transparent material, which will be described later in the description of the anode, after producing the above metal with a thickness of 1 to 20 nm on the cathode. By applying this, an element in which both the anode and the cathode are transmissive can be manufactured.
《注入層:電子注入層(陰極バッファー層)、正孔注入層》
注入層は必要に応じて設け、電子注入層と正孔注入層があり、上記のように陽極と発光層又は正孔輸送層の間、及び陰極と発光層又は電子輸送層との間に存在させてもよい。
注入層とは、駆動電圧低下や発光輝度向上のために電極と有機層間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123~166頁)に詳細に記載されており、正孔注入層(陽極バッファー層)と電子注入層(陰極バッファー層)とがある。 << Injection layer: electron injection layer (cathode buffer layer), hole injection layer >>
The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, exists between the anode and the light emitting layer or the hole transport layer, and between the cathode and the light emitting layer or the electron transport layer. You may let them.
An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance. “Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) 2), Chapter 2, “Electrode Materials” (pages 123 to 166) in detail, and includes a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).
注入層は必要に応じて設け、電子注入層と正孔注入層があり、上記のように陽極と発光層又は正孔輸送層の間、及び陰極と発光層又は電子輸送層との間に存在させてもよい。
注入層とは、駆動電圧低下や発光輝度向上のために電極と有機層間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123~166頁)に詳細に記載されており、正孔注入層(陽極バッファー層)と電子注入層(陰極バッファー層)とがある。 << Injection layer: electron injection layer (cathode buffer layer), hole injection layer >>
The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, exists between the anode and the light emitting layer or the hole transport layer, and between the cathode and the light emitting layer or the electron transport layer. You may let them.
An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance. “Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) 2), Chapter 2, “Electrode Materials” (pages 123 to 166) in detail, and includes a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).
陽極バッファー層(正孔注入層)は、特開平9-45479号公報、同9-260062号公報、同8-288069号公報等にもその詳細が記載されており、具体例として、銅フタロシアニンに代表されるフタロシアニンバッファー層、特表2003-519432号公報や特開2006-135145号公報等に記載されているようなヘキサアザトリフェニレン誘導体バッファー層、酸化バナジウムに代表される酸化物バッファー層、アモルファスカーボンバッファー層、ポリアニリン(エメラルディン)やポリチオフェン等の導電性高分子を用いた高分子バッファー層、トリス(2-フェニルピリジン)イリジウム錯体等に代表されるオルトメタル化錯体層等が挙げられる。
The details of the anode buffer layer (hole injection layer) are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069 and the like. As a specific example, copper phthalocyanine is used. Representative phthalocyanine buffer layer, hexaazatriphenylene derivative buffer layer, oxide buffer layer typified by vanadium oxide, amorphous carbon as described in JP-T-2003-519432, JP-A-2006-135145, etc. Examples thereof include a buffer layer, a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) and polythiophene, and an orthometalated complex layer represented by tris (2-phenylpyridine) iridium complex.
陰極バッファー層(電子注入層)は、特開平6-325871号公報、同9-17574号公報、同10-74586号公報等にもその詳細が記載されており、具体的にはストロンチウムやアルミニウム等に代表される金属バッファー層、フッ化リチウム、フッ化カリウムに代表されるアルカリ金属化合物バッファー層、フッ化マグネシウム、フッ化セシウムに代表されるアルカリ土類金属化合物バッファー層、酸化アルミニウムに代表される酸化物バッファー層等が挙げられる。上記バッファー層(注入層)はごく薄い膜であることが望ましく、素材にもよるがその膜厚は0.1nm~5μmの範囲が好ましい。
The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc. Metal buffer layer typified by, alkali metal compound buffer layer typified by lithium fluoride and potassium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride and cesium fluoride, typified by aluminum oxide Examples thereof include an oxide buffer layer. The buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 μm, although it depends on the material.
《阻止層:正孔阻止層、電子阻止層》
阻止層は、上記のごとく有機化合物薄膜の基本構成層の他に必要に応じて設けられるものである。例えば、特開平11-204258号公報、同11-204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。 <Blocking layer: hole blocking layer, electron blocking layer>
As described above, the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)” on page 237. There is a hole blocking (hole blocking) layer.
阻止層は、上記のごとく有機化合物薄膜の基本構成層の他に必要に応じて設けられるものである。例えば、特開平11-204258号公報、同11-204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。 <Blocking layer: hole blocking layer, electron blocking layer>
As described above, the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)” on page 237. There is a hole blocking (hole blocking) layer.
正孔阻止層とは広い意味では電子輸送層の機能を有し、電子を輸送する機能を有しつつ正孔を輸送する能力が著しく小さい正孔阻止材料からなり、電子を輸送しつつ正孔を阻止することで電子と正孔の再結合確率を向上させることができる。
また、前述する電子輸送層の構成を必要に応じて、正孔阻止層として用いることができる。
本発明の有機EL素子の正孔阻止層は、発光層に隣接して設けられていることが好ましい。
正孔阻止層には、前述のホスト化合物として挙げた、カルバゾール誘導体、カルボリン誘導体、ジアザカルバゾール誘導体(ここで、ジアザカルバゾール誘導体とは、カルボリン環を構成する炭素原子のいずれか一つが窒素原子で置き換わったものをいう。)を含有することが好ましい。 The hole blocking layer has a function of an electron transport layer in a broad sense, and is made of a hole blocking material that has a function of transporting electrons and has a remarkably small ability to transport holes. The probability of recombination of electrons and holes can be improved by blocking.
Moreover, the structure of the electron carrying layer mentioned above can be used as a hole-blocking layer as needed.
The hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.
The hole blocking layer includes a carbazole derivative, a carboline derivative, a diazacarbazole derivative (the diazacarbazole derivative is a nitrogen atom in which any one of carbon atoms constituting the carboline ring is cited as the host compound described above. It is preferable to contain the thing replaced by.
また、前述する電子輸送層の構成を必要に応じて、正孔阻止層として用いることができる。
本発明の有機EL素子の正孔阻止層は、発光層に隣接して設けられていることが好ましい。
正孔阻止層には、前述のホスト化合物として挙げた、カルバゾール誘導体、カルボリン誘導体、ジアザカルバゾール誘導体(ここで、ジアザカルバゾール誘導体とは、カルボリン環を構成する炭素原子のいずれか一つが窒素原子で置き換わったものをいう。)を含有することが好ましい。 The hole blocking layer has a function of an electron transport layer in a broad sense, and is made of a hole blocking material that has a function of transporting electrons and has a remarkably small ability to transport holes. The probability of recombination of electrons and holes can be improved by blocking.
Moreover, the structure of the electron carrying layer mentioned above can be used as a hole-blocking layer as needed.
The hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.
The hole blocking layer includes a carbazole derivative, a carboline derivative, a diazacarbazole derivative (the diazacarbazole derivative is a nitrogen atom in which any one of carbon atoms constituting the carboline ring is cited as the host compound described above. It is preferable to contain the thing replaced by.
一方、電子阻止層とは広い意味では正孔輸送層の機能を有し、正孔を輸送する機能を有しつつ電子を輸送する能力が著しく小さい材料からなり、正孔を輸送しつつ電子を阻止することで電子と正孔の再結合確率を向上させることができる。
また、後述する正孔輸送層の構成を必要に応じて電子阻止層として用いることができる。本発明に係る正孔阻止層、電子輸送層の層厚としては、好ましくは3~100nmであり、更に好ましくは5~30nmである。 On the other hand, the electron blocking layer has a function of a hole transport layer in a broad sense, and is made of a material that has a function of transporting holes and has an extremely small ability to transport electrons, and transports electrons while transporting holes. By blocking, the recombination probability of electrons and holes can be improved.
Moreover, the structure of the positive hole transport layer mentioned later can be used as an electron blocking layer as needed. The thickness of the hole blocking layer and the electron transporting layer according to the present invention is preferably 3 to 100 nm, and more preferably 5 to 30 nm.
また、後述する正孔輸送層の構成を必要に応じて電子阻止層として用いることができる。本発明に係る正孔阻止層、電子輸送層の層厚としては、好ましくは3~100nmであり、更に好ましくは5~30nmである。 On the other hand, the electron blocking layer has a function of a hole transport layer in a broad sense, and is made of a material that has a function of transporting holes and has an extremely small ability to transport electrons, and transports electrons while transporting holes. By blocking, the recombination probability of electrons and holes can be improved.
Moreover, the structure of the positive hole transport layer mentioned later can be used as an electron blocking layer as needed. The thickness of the hole blocking layer and the electron transporting layer according to the present invention is preferably 3 to 100 nm, and more preferably 5 to 30 nm.
《正孔輸送層》
正孔輸送層とは正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層、電子阻止層も正孔輸送層に含まれる。正孔輸送層は単層又は複数層設けることができる。
正孔輸送材料としては、正孔の注入又は輸送、電子の障壁性のいずれかを有するものであり、有機物、無機物のいずれであってもよい。例えば、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体及びピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラザン誘導体、アニリン系共重合体、導電性高分子オリゴマー、特にチオフェンオリゴマー等が挙げられる。
また、特表2003-519432号公報や特開2006-135145号公報等に記載されているようなアザトリフェニレン誘導体も同様に正孔輸送材料として用いることができる。 《Hole transport layer》
The hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer. The hole transport layer can be provided as a single layer or a plurality of layers.
The hole transport material has any of hole injection or transport and electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, conductive polymer oligomers, particularly thiophene oligomers.
In addition, azatriphenylene derivatives such as those described in JP-T-2003-519432 and JP-A-2006-135145 can also be used as hole transport materials.
正孔輸送層とは正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層、電子阻止層も正孔輸送層に含まれる。正孔輸送層は単層又は複数層設けることができる。
正孔輸送材料としては、正孔の注入又は輸送、電子の障壁性のいずれかを有するものであり、有機物、無機物のいずれであってもよい。例えば、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体及びピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラザン誘導体、アニリン系共重合体、導電性高分子オリゴマー、特にチオフェンオリゴマー等が挙げられる。
また、特表2003-519432号公報や特開2006-135145号公報等に記載されているようなアザトリフェニレン誘導体も同様に正孔輸送材料として用いることができる。 《Hole transport layer》
The hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer. The hole transport layer can be provided as a single layer or a plurality of layers.
The hole transport material has any of hole injection or transport and electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, conductive polymer oligomers, particularly thiophene oligomers.
In addition, azatriphenylene derivatives such as those described in JP-T-2003-519432 and JP-A-2006-135145 can also be used as hole transport materials.
正孔輸送材料としては上記のものを使用することができるが、ポルフィリン化合物、芳香族第3級アミン化合物及びスチリルアミン化合物、特に芳香族第3級アミン化合物を用いることが好ましい。
芳香族第3級アミン化合物及びスチリルアミン化合物の代表例としては、N,N,N′,N′-テトラフェニル-4,4′-ジアミノフェニル;N,N′-ジフェニル-N,N′-ビス(3-メチルフェニル)-〔1,1′-ビフェニル〕-4,4′-ジアミン(TPD);2,2-ビス(4-ジ-p-トリルアミノフェニル)プロパン;1,1-ビス(4-ジ-p-トリルアミノフェニル)シクロヘキサン;N,N,N′,N′-テトラ-p-トリル-4,4′-ジアミノビフェニル;1,1-ビス(4-ジ-p-トリルアミノフェニル)-4-フェニルシクロヘキサン;ビス(4-ジメチルアミノ-2-メチルフェニル)フェニルメタン;ビス(4-ジ-p-トリルアミノフェニル)フェニルメタン;N,N′-ジフェニル-N,N′-ジ(4-メトキシフェニル)-4,4′-ジアミノビフェニル;N,N,N′,N′-テトラフェニル-4,4′-ジアミノジフェニルエーテル;4,4′-ビス(ジフェニルアミノ)クオードリフェニル;N,N,N-トリ(p-トリル)アミン;4-(ジ-p-トリルアミノ)-4′-〔4-(ジ-p-トリルアミノ)スチリル〕スチルベン;4-N,N-ジフェニルアミノ-(2-ジフェニルビニル)ベンゼン;3-メトキシ-4′-N,N-ジフェニルアミノスチルベン;N-フェニルカルバゾール、更には米国特許第5061569号明細書に記載されている2個の縮合芳香族環を分子内に有するもの、例えば、4,4′-ビス〔N-(1-ナフチル)-N-フェニルアミノ〕ビフェニル(NPD)、特開平4-308688号公報に記載されているトリフェニルアミンユニットが三つスターバースト型に連結された4,4′,4″-トリス〔N-(3-メチルフェニル)-N-フェニルアミノ〕トリフェニルアミン(MTDATA)等が挙げられる。 The above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-diphenyl-N, N ' - (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis (diphenylamino) quadriphenyl; N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene; 4-N, N-diphenylamino- (2-diphenylvinyl) benzene; 3-methoxy-4'-N, N-diphenylaminostilbene; N-phenylcarbazole, and further two fused aromatic rings described in US Pat. No. 5,061,569. Those possessed in the molecule, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), Japanese Patent Laid-Open No. 4-308688 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (MTDATA), etc., in which the triphenylamine units described in 3 are linked in a three star burst type Is mentioned.
芳香族第3級アミン化合物及びスチリルアミン化合物の代表例としては、N,N,N′,N′-テトラフェニル-4,4′-ジアミノフェニル;N,N′-ジフェニル-N,N′-ビス(3-メチルフェニル)-〔1,1′-ビフェニル〕-4,4′-ジアミン(TPD);2,2-ビス(4-ジ-p-トリルアミノフェニル)プロパン;1,1-ビス(4-ジ-p-トリルアミノフェニル)シクロヘキサン;N,N,N′,N′-テトラ-p-トリル-4,4′-ジアミノビフェニル;1,1-ビス(4-ジ-p-トリルアミノフェニル)-4-フェニルシクロヘキサン;ビス(4-ジメチルアミノ-2-メチルフェニル)フェニルメタン;ビス(4-ジ-p-トリルアミノフェニル)フェニルメタン;N,N′-ジフェニル-N,N′-ジ(4-メトキシフェニル)-4,4′-ジアミノビフェニル;N,N,N′,N′-テトラフェニル-4,4′-ジアミノジフェニルエーテル;4,4′-ビス(ジフェニルアミノ)クオードリフェニル;N,N,N-トリ(p-トリル)アミン;4-(ジ-p-トリルアミノ)-4′-〔4-(ジ-p-トリルアミノ)スチリル〕スチルベン;4-N,N-ジフェニルアミノ-(2-ジフェニルビニル)ベンゼン;3-メトキシ-4′-N,N-ジフェニルアミノスチルベン;N-フェニルカルバゾール、更には米国特許第5061569号明細書に記載されている2個の縮合芳香族環を分子内に有するもの、例えば、4,4′-ビス〔N-(1-ナフチル)-N-フェニルアミノ〕ビフェニル(NPD)、特開平4-308688号公報に記載されているトリフェニルアミンユニットが三つスターバースト型に連結された4,4′,4″-トリス〔N-(3-メチルフェニル)-N-フェニルアミノ〕トリフェニルアミン(MTDATA)等が挙げられる。 The above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-diphenyl-N, N ' - (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis (diphenylamino) quadriphenyl; N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene; 4-N, N-diphenylamino- (2-diphenylvinyl) benzene; 3-methoxy-4'-N, N-diphenylaminostilbene; N-phenylcarbazole, and further two fused aromatic rings described in US Pat. No. 5,061,569. Those possessed in the molecule, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), Japanese Patent Laid-Open No. 4-308688 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (MTDATA), etc., in which the triphenylamine units described in 3 are linked in a three star burst type Is mentioned.
更にこれらの材料を高分子鎖に導入した、又はこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。
また、p型-Si、p型-SiC等の無機化合物も正孔注入材料、正孔輸送材料として使用することができる。 Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
In addition, inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
また、p型-Si、p型-SiC等の無機化合物も正孔注入材料、正孔輸送材料として使用することができる。 Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
In addition, inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
また、特開平11-251067号公報、J.Huang et.al.著文献(Applied Physics Letters 80(2002),p.139)に記載されているような、いわゆるp型正孔輸送材料を用いることもできる。本発明においては、より高効率の発光素子が得られることからこれらの材料を用いることが好ましい。
Also, JP-A-11-251067, J. Org. Huang et. al. A so-called p-type hole transport material as described in a book (Applied Physics Letters 80 (2002), p. 139) can also be used. In the present invention, these materials are preferably used because a light-emitting element with higher efficiency can be obtained.
正孔輸送層は上記正孔輸送材料を、例えば、真空蒸着法、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜化することにより形成することができる。
正孔輸送層の層厚については特に制限はないが、通常は5nm~5μm程度、好ましくは5~200nmである。この正孔輸送層は上記材料の1種又は2種以上からなる1層構造であってもよい。 The hole transport layer can be formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. it can.
The layer thickness of the hole transport layer is not particularly limited, but is usually about 5 nm to 5 μm, preferably 5 to 200 nm. This hole transport layer may have a single layer structure composed of one or more of the above materials.
正孔輸送層の層厚については特に制限はないが、通常は5nm~5μm程度、好ましくは5~200nmである。この正孔輸送層は上記材料の1種又は2種以上からなる1層構造であってもよい。 The hole transport layer can be formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. it can.
The layer thickness of the hole transport layer is not particularly limited, but is usually about 5 nm to 5 μm, preferably 5 to 200 nm. This hole transport layer may have a single layer structure composed of one or more of the above materials.
また、不純物をドープしたp性の高い正孔輸送層を用いることもできる。その例としては、特開平4-297076号公報、特開2000-196140号公報、同2001-102175号公報の各公報、J.Appl.Phys.,95,5773(2004)等に記載されたものが挙げられる。
本発明においては、このようなp性の高い正孔輸送層を用いることが、より低消費電力の素子を作製することができるため好ましい。 Alternatively, a hole transport layer having a high p property doped with impurities can be used. Examples thereof include JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like.
In the present invention, it is preferable to use a hole transport layer having such a high p property because a device with lower power consumption can be produced.
本発明においては、このようなp性の高い正孔輸送層を用いることが、より低消費電力の素子を作製することができるため好ましい。 Alternatively, a hole transport layer having a high p property doped with impurities can be used. Examples thereof include JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like.
In the present invention, it is preferable to use a hole transport layer having such a high p property because a device with lower power consumption can be produced.
《陽極》
有機EL素子における陽極としては、仕事関数の大きい(4eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。このような電極物質の具体例としては、Au等の金属、CuI、ITO、SnO2、ZnO等の導電性透明材料が挙げられる。
また、IDIXO(In2O3-ZnO)等非晶質で透明導電膜を作製可能な材料を用いてもよい。陽極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させ、フォトリソグラフィー法で所望の形状のパターンを形成してもよく、又はパターン精度を余り必要としない場合は(100μm以上程度)、上記電極物質の蒸着やスパッタリング時に所望の形状のマスクを介してパターンを形成してもよい。 "anode"
As the anode in the organic EL element, an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used. Specific examples of such an electrode substance include metals such as Au, and conductive transparent materials such as CuI, ITO, SnO 2 , and ZnO.
Alternatively, an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used. For the anode, a thin film may be formed by vapor deposition or sputtering of these electrode materials, and a pattern of a desired shape may be formed by photolithography, or when pattern accuracy is not required (about 100 μm or more) A pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material.
有機EL素子における陽極としては、仕事関数の大きい(4eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。このような電極物質の具体例としては、Au等の金属、CuI、ITO、SnO2、ZnO等の導電性透明材料が挙げられる。
また、IDIXO(In2O3-ZnO)等非晶質で透明導電膜を作製可能な材料を用いてもよい。陽極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させ、フォトリソグラフィー法で所望の形状のパターンを形成してもよく、又はパターン精度を余り必要としない場合は(100μm以上程度)、上記電極物質の蒸着やスパッタリング時に所望の形状のマスクを介してパターンを形成してもよい。 "anode"
As the anode in the organic EL element, an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used. Specific examples of such an electrode substance include metals such as Au, and conductive transparent materials such as CuI, ITO, SnO 2 , and ZnO.
Alternatively, an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used. For the anode, a thin film may be formed by vapor deposition or sputtering of these electrode materials, and a pattern of a desired shape may be formed by photolithography, or when pattern accuracy is not required (about 100 μm or more) A pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material.
あるいは、有機導電性化合物のように塗布可能な物質を用いる場合には、印刷方式、コーティング方式等の湿式成膜法を用いることもできる。この陽極より発光を取り出す場合には、透過率を10%より大きくすることが望ましく、また陽極としてのシート抵抗は数百Ω/□以下が好ましい。更に膜厚は材料にもよるが、通常10~1000nm、好ましくは10~200nmの範囲で選ばれる。
Alternatively, when a material that can be applied, such as an organic conductive compound, is used, a wet film forming method such as a printing method or a coating method can also be used. When light emission is extracted from the anode, it is desirable that the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred Ω / □ or less. Further, although the film thickness depends on the material, it is usually selected in the range of 10 to 1000 nm, preferably 10 to 200 nm.
《支持基板》
本発明の有機EL素子に用いることのできる支持基板(以下、基体、基板、基材、支持体等ともいう。)としては、ガラス、プラスチック等の種類には特に限定はなく、また透明であっても不透明であってもよい。支持基板側から光を取り出す場合には、支持基板は透明であることが好ましい。好ましく用いられる透明な支持基板としては、ガラス、石英、透明樹脂フィルムを挙げることができる。特に好ましい支持基板は、有機EL素子にフレキシブル性を与えることが可能な樹脂フィルムである。 《Support substrate》
The support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention is not particularly limited in the type of glass, plastic, etc., and is transparent. Or opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.
本発明の有機EL素子に用いることのできる支持基板(以下、基体、基板、基材、支持体等ともいう。)としては、ガラス、プラスチック等の種類には特に限定はなく、また透明であっても不透明であってもよい。支持基板側から光を取り出す場合には、支持基板は透明であることが好ましい。好ましく用いられる透明な支持基板としては、ガラス、石英、透明樹脂フィルムを挙げることができる。特に好ましい支持基板は、有機EL素子にフレキシブル性を与えることが可能な樹脂フィルムである。 《Support substrate》
The support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention is not particularly limited in the type of glass, plastic, etc., and is transparent. Or opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.
樹脂フィルムとしては、例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステル、ポリエチレン、ポリプロピレン、セロファン、セルロースジアセテート、セルローストリアセテート(TAC)、セルロースアセテートブチレート、セルロースアセテートプロピオネート(CAP)、セルロースアセテートフタレート、セルロースナイトレート等のセルロースエステル類又はそれらの誘導体、ポリ塩化ビニリデン、ポリビニルアルコール、ポリエチレンビニルアルコール、シンジオタクティックポリスチレン、ポリカーボネート、ノルボルネン樹脂、ポリメチルペンテン、ポリエーテルケトン、ポリイミド、ポリエーテルスルホン(PES)、ポリフェニレンスルフィド、ポリスルホン類、ポリエーテルイミド、ポリエーテルケトンイミド、ポリアミド、フッ素樹脂、ナイロン、ポリメチルメタクリレート、アクリル又はポリアリレート類、アートン(商品名JSR社製)又はアペル(商品名三井化学社製)といったシクロオレフィン系樹脂等のフィルムを挙げることができる。
Examples of the resin film include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate (TAC), cellulose acetate butyrate, cellulose acetate propionate ( CAP), cellulose esters such as cellulose acetate phthalate, cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylates, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by Mitsui Chemicals) Can be mentioned.
樹脂フィルムの表面には、無機物、有機物の被膜又はその両者のハイブリッド被膜が形成されていてもよく、JIS K 7129-1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%)が0.01g/m2・24h以下のバリアー性フィルムであることが好ましく、更には、JIS K 7126-1987に準拠した方法で測定された酸素透過度が、1×10-3ml/m2・24h・atm以下、水蒸気透過度が、1×10-5g/m2・24h以下の高バリアー性フィルムであることが好ましい。
The surface of the resin film may be formed with an inorganic film, an organic film, or a hybrid film of both, and the water vapor permeability (25 ± 0.5 ° C.) measured by a method according to JIS K 7129-1992. , And a relative humidity (90 ± 2)%) of 0.01 g / m 2 · 24 h or less is preferable, and the oxygen permeability measured by a method according to JIS K 7126-1987 is also preferable. It is preferably a high-barrier film having 1 × 10 −3 ml / m 2 · 24 h · atm or less and a water vapor permeability of 1 × 10 −5 g / m 2 · 24 h or less.
バリアー層を形成する材料としては、水分や酸素等の素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化ケイ素、二酸化ケイ素、窒化ケイ素等を用いることができる。更に該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることがより好ましい。無機層と有機層の積層順については特に制限はないが、両者を交互に複数回積層させることが好ましい。
The material for forming the barrier layer may be any material as long as it has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like can be used. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and organic material layers. Although there is no restriction | limiting in particular about the lamination | stacking order of an inorganic layer and an organic layer, It is preferable to laminate | stack both alternately several times.
バリアー層の形成方法については特に限定はなく、例えば、真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスターイオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができるが、特開2004-68143号公報に記載されているような大気圧プラズマ重合法によるものが特に好ましい。
不透明な支持基板としては、例えば、アルミ、ステンレス等の金属板、フィルムや不透明樹脂基板、セラミック製の基板等が挙げられる。 The method for forming the barrier layer is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma polymerization A plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
Examples of the opaque support substrate include metal plates such as aluminum and stainless steel, films, opaque resin substrates, and ceramic substrates.
不透明な支持基板としては、例えば、アルミ、ステンレス等の金属板、フィルムや不透明樹脂基板、セラミック製の基板等が挙げられる。 The method for forming the barrier layer is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma polymerization A plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
Examples of the opaque support substrate include metal plates such as aluminum and stainless steel, films, opaque resin substrates, and ceramic substrates.
本発明の有機EL素子の発光の室温における外部取り出し収率は、1%以上であることが好ましく、5%以上であるとより好ましい。
ここで、外部取り出し量子収率(%)=有機EL素子外部に発光した光子数/有機EL素子に流した電子数×100である。
また、カラーフィルター等の色相改良フィルター等を併用しても、有機EL素子からの発光色を、蛍光体を用いて多色へ変換する色変換フィルターを併用してもよい。色変換フィルターを用いる場合においては、有機EL素子の発光のλmaxは480nm以下が好ましい。 The external extraction yield at room temperature for light emission of the organic EL device of the present invention is preferably 1% or more, and more preferably 5% or more.
Here, the external extraction quantum yield (%) = the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element × 100.
In addition, a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor may be used in combination. In the case of using a color conversion filter, the λmax of light emission of the organic EL element is preferably 480 nm or less.
ここで、外部取り出し量子収率(%)=有機EL素子外部に発光した光子数/有機EL素子に流した電子数×100である。
また、カラーフィルター等の色相改良フィルター等を併用しても、有機EL素子からの発光色を、蛍光体を用いて多色へ変換する色変換フィルターを併用してもよい。色変換フィルターを用いる場合においては、有機EL素子の発光のλmaxは480nm以下が好ましい。 The external extraction yield at room temperature for light emission of the organic EL device of the present invention is preferably 1% or more, and more preferably 5% or more.
Here, the external extraction quantum yield (%) = the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element × 100.
In addition, a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor may be used in combination. In the case of using a color conversion filter, the λmax of light emission of the organic EL element is preferably 480 nm or less.
《有機EL素子の作製方法》
有機EL素子の作製方法の一例として、陽極/正孔注入層/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層(電子注入層)/陰極からなる素子の作製方法について説明する。
まず、適当な基体上に所望の電極物質、例えば、陽極用物質からなる薄膜を1μm以下、好ましくは10~200nmの膜厚になるように形成させ、陽極を作製する。
次に、この上に素子材料である正孔注入層、正孔輸送層、発光層、正孔阻止層、電子輸送層、陰極バッファー層等の有機化合物を含有する薄膜を形成させる。 << Method for producing organic EL element >>
As an example of a method for producing an organic EL device, a device comprising an anode / hole injection layer / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / cathode buffer layer (electron injection layer) / cathode Will be described.
First, a desired electrode material, for example, a thin film made of an anode material is formed on a suitable substrate so as to have a thickness of 1 μm or less, preferably 10 to 200 nm, to produce an anode.
Next, a thin film containing an organic compound such as a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, or a cathode buffer layer, which is an element material, is formed thereon.
有機EL素子の作製方法の一例として、陽極/正孔注入層/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層(電子注入層)/陰極からなる素子の作製方法について説明する。
まず、適当な基体上に所望の電極物質、例えば、陽極用物質からなる薄膜を1μm以下、好ましくは10~200nmの膜厚になるように形成させ、陽極を作製する。
次に、この上に素子材料である正孔注入層、正孔輸送層、発光層、正孔阻止層、電子輸送層、陰極バッファー層等の有機化合物を含有する薄膜を形成させる。 << Method for producing organic EL element >>
As an example of a method for producing an organic EL device, a device comprising an anode / hole injection layer / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / cathode buffer layer (electron injection layer) / cathode Will be described.
First, a desired electrode material, for example, a thin film made of an anode material is formed on a suitable substrate so as to have a thickness of 1 μm or less, preferably 10 to 200 nm, to produce an anode.
Next, a thin film containing an organic compound such as a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, or a cathode buffer layer, which is an element material, is formed thereon.
薄膜の形成方法としては、例えば、真空蒸着法、湿式法(ウェットプロセスともいう。)等により成膜して形成することができる。
湿式法としては、スピンコート法、キャスト法、ダイコート法、ブレードコート法、ロールコート法、インクジェット法、印刷法、スプレーコート法、カーテンコート法、LB法等があるが、精密な薄膜が形成可能で、かつ高生産性の点から、ダイコート法、ロールコート法、インクジェット法、スプレーコート法などのロール・to・ロール方式適性の高い方法が好ましい。また、層ごとに異なる成膜法を適用してもよい。 As a method for forming a thin film, for example, a thin film can be formed by a vacuum deposition method, a wet method (also referred to as a wet process), or the like.
Wet methods include spin coating, casting, die coating, blade coating, roll coating, ink jet, printing, spray coating, curtain coating, and LB, but precise thin films can be formed. From the viewpoint of high productivity, a method having a high suitability for a roll-to-roll method such as a die coating method, a roll coating method, an ink jet method, or a spray coating method is preferable. Different film formation methods may be applied for each layer.
湿式法としては、スピンコート法、キャスト法、ダイコート法、ブレードコート法、ロールコート法、インクジェット法、印刷法、スプレーコート法、カーテンコート法、LB法等があるが、精密な薄膜が形成可能で、かつ高生産性の点から、ダイコート法、ロールコート法、インクジェット法、スプレーコート法などのロール・to・ロール方式適性の高い方法が好ましい。また、層ごとに異なる成膜法を適用してもよい。 As a method for forming a thin film, for example, a thin film can be formed by a vacuum deposition method, a wet method (also referred to as a wet process), or the like.
Wet methods include spin coating, casting, die coating, blade coating, roll coating, ink jet, printing, spray coating, curtain coating, and LB, but precise thin films can be formed. From the viewpoint of high productivity, a method having a high suitability for a roll-to-roll method such as a die coating method, a roll coating method, an ink jet method, or a spray coating method is preferable. Different film formation methods may be applied for each layer.
本発明に用いられる発光ドーパント等の有機EL材料を溶解又は分散する液媒体としては、例えば、メチルエチルケトン、シクロヘキサノン等のケトン類、酢酸エチル等の脂肪酸エステル類、ジクロロベンゼン等のハロゲン化炭化水素類、トルエン、キシレン、メシチレン、シクロヘキシルベンゼン等の芳香族炭化水素類、シクロヘキサン、デカリン、ドデカン等の脂肪族炭化水素類、ジメチルホルムアミド(DMF)、DMSO等の有機溶媒を用いることができる。
また、分散方法としては、超音波、高剪断力分散やメディア分散等の分散方法により分散することができる。 Examples of the liquid medium for dissolving or dispersing the organic EL material such as a luminescent dopant used in the present invention include, for example, ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, Aromatic hydrocarbons such as toluene, xylene, mesitylene and cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin and dodecane, and organic solvents such as dimethylformamide (DMF) and DMSO can be used.
Moreover, as a dispersion method, it can disperse | distribute by dispersion methods, such as an ultrasonic wave, high shear force dispersion | distribution, and media dispersion | distribution.
また、分散方法としては、超音波、高剪断力分散やメディア分散等の分散方法により分散することができる。 Examples of the liquid medium for dissolving or dispersing the organic EL material such as a luminescent dopant used in the present invention include, for example, ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, Aromatic hydrocarbons such as toluene, xylene, mesitylene and cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin and dodecane, and organic solvents such as dimethylformamide (DMF) and DMSO can be used.
Moreover, as a dispersion method, it can disperse | distribute by dispersion methods, such as an ultrasonic wave, high shear force dispersion | distribution, and media dispersion | distribution.
これらの層の形成後、その上に陰極用物質からなる薄膜を1μm以下、好ましくは50~200nmの範囲の膜厚になるように形成させ、陰極を設けることにより所望の有機EL素子が得られる。
また、順序を逆にして、陰極、陰極バッファー層、電子輸送層、正孔阻止層、発光層、正孔輸送層、正孔注入層、陽極の順に作製することも可能である。
本発明の有機EL素子の作製は、一回の真空引きで一貫して正孔注入層から陰極まで作製するのが好ましいが、途中で取り出して異なる成膜法を施しても構わない。その際、作業を乾燥不活性ガス雰囲気下で行うことが好ましい。 After these layers are formed, a thin film made of a cathode material is formed thereon so as to have a thickness of 1 μm or less, preferably in the range of 50 to 200 nm, and a desired organic EL device can be obtained by providing a cathode. .
Further, the order can be reversed, and the cathode, cathode buffer layer, electron transport layer, hole blocking layer, light emitting layer, hole transport layer, hole injection layer, and anode can be formed in this order.
The organic EL device of the present invention is preferably produced from the hole injection layer to the cathode consistently by a single evacuation, but it may be taken out halfway and subjected to different film forming methods. At that time, it is preferable to perform the work in a dry inert gas atmosphere.
また、順序を逆にして、陰極、陰極バッファー層、電子輸送層、正孔阻止層、発光層、正孔輸送層、正孔注入層、陽極の順に作製することも可能である。
本発明の有機EL素子の作製は、一回の真空引きで一貫して正孔注入層から陰極まで作製するのが好ましいが、途中で取り出して異なる成膜法を施しても構わない。その際、作業を乾燥不活性ガス雰囲気下で行うことが好ましい。 After these layers are formed, a thin film made of a cathode material is formed thereon so as to have a thickness of 1 μm or less, preferably in the range of 50 to 200 nm, and a desired organic EL device can be obtained by providing a cathode. .
Further, the order can be reversed, and the cathode, cathode buffer layer, electron transport layer, hole blocking layer, light emitting layer, hole transport layer, hole injection layer, and anode can be formed in this order.
The organic EL device of the present invention is preferably produced from the hole injection layer to the cathode consistently by a single evacuation, but it may be taken out halfway and subjected to different film forming methods. At that time, it is preferable to perform the work in a dry inert gas atmosphere.
《封止》
本発明に用いられる封止手段としては、例えば、封止部材と電極、支持基板とを接着剤で接着する方法を挙げることができる。
封止部材としては、有機EL素子の表示領域を覆うように配置されていればよく、凹板状でも平板状でもよい。また透明性、電気絶縁性は特に問わない。 <Sealing>
As a sealing means used for this invention, the method of adhere | attaching a sealing member, an electrode, and a support substrate with an adhesive agent can be mentioned, for example.
The sealing member may be disposed so as to cover the display area of the organic EL element, and may be a concave plate shape or a flat plate shape. Further, transparency and electrical insulation are not particularly limited.
本発明に用いられる封止手段としては、例えば、封止部材と電極、支持基板とを接着剤で接着する方法を挙げることができる。
封止部材としては、有機EL素子の表示領域を覆うように配置されていればよく、凹板状でも平板状でもよい。また透明性、電気絶縁性は特に問わない。 <Sealing>
As a sealing means used for this invention, the method of adhere | attaching a sealing member, an electrode, and a support substrate with an adhesive agent can be mentioned, for example.
The sealing member may be disposed so as to cover the display area of the organic EL element, and may be a concave plate shape or a flat plate shape. Further, transparency and electrical insulation are not particularly limited.
具体的には、ガラス板、ポリマー板・フィルム、金属板・フィルム等が挙げられる。ガラス板としては、特にソーダ石灰ガラス、バリウム・ストロンチウム含有ガラス、鉛ガラス、アルミノケイ酸ガラス、ホウケイ酸ガラス、バリウムホウケイ酸ガラス、石英等を挙げることができる。
また、ポリマー板としては、ポリカーボネート、アクリル、ポリエチレンテレフタレート、ポリエーテルサルファイド、ポリサルフォン等から形成されたものを挙げることができる。
金属板としては、ステンレス、鉄、銅、アルミニウム、マグネシウム、ニッケル、亜鉛、クロム、チタン、モリブデン、シリコン、ゲルマニウム及びタンタルからなる群から選ばれる1種以上の金属又は合金からなるものが挙げられる。 Specific examples include a glass plate, a polymer plate / film, and a metal plate / film. Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
Examples of the polymer plate include those formed from polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, polysulfone and the like.
Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
また、ポリマー板としては、ポリカーボネート、アクリル、ポリエチレンテレフタレート、ポリエーテルサルファイド、ポリサルフォン等から形成されたものを挙げることができる。
金属板としては、ステンレス、鉄、銅、アルミニウム、マグネシウム、ニッケル、亜鉛、クロム、チタン、モリブデン、シリコン、ゲルマニウム及びタンタルからなる群から選ばれる1種以上の金属又は合金からなるものが挙げられる。 Specific examples include a glass plate, a polymer plate / film, and a metal plate / film. Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
Examples of the polymer plate include those formed from polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, polysulfone and the like.
Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
本発明においては、素子を薄膜化できるということからポリマーフィルム、金属フィルムを好ましく使用することができる。
更には、ポリマーフィルムは、JIS K 7126-1987に準拠した方法で測定された酸素透過度が1×10-3ml/m2・24h・atm以下、JIS K 7129-1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%)が、1×10-3g/m2・24h以下のものであることが好ましい。
封止部材を凹状に加工するのは、サンドブラスト加工、化学エッチング加工等が使われる。 In the present invention, a polymer film and a metal film can be preferably used because the element can be thinned.
Further, the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 × 10 −3 ml / m 2 · 24 h · atm or less, and measured by a method according to JIS K 7129-1992. The water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)%) is preferably 1 × 10 −3 g / m 2 · 24 h or less.
For processing the sealing member into a concave shape, sandblasting, chemical etching, or the like is used.
更には、ポリマーフィルムは、JIS K 7126-1987に準拠した方法で測定された酸素透過度が1×10-3ml/m2・24h・atm以下、JIS K 7129-1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%)が、1×10-3g/m2・24h以下のものであることが好ましい。
封止部材を凹状に加工するのは、サンドブラスト加工、化学エッチング加工等が使われる。 In the present invention, a polymer film and a metal film can be preferably used because the element can be thinned.
Further, the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 × 10 −3 ml / m 2 · 24 h · atm or less, and measured by a method according to JIS K 7129-1992. The water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)%) is preferably 1 × 10 −3 g / m 2 · 24 h or less.
For processing the sealing member into a concave shape, sandblasting, chemical etching, or the like is used.
接着剤として具体的には、アクリル酸系オリゴマー、メタクリル酸系オリゴマーの反応性ビニル基を有する光硬化及び熱硬化型接着剤、2-シアノアクリル酸エステル等の湿気硬化型等の接着剤を挙げることができる。また、エポキシ系等の熱及び化学硬化型(二液混合)を挙げることができる。また、ホットメルト型のポリアミド、ポリエステル、ポリオレフィンを挙げることができる。また、カチオン硬化タイプの紫外線硬化型エポキシ樹脂接着剤を挙げることができる。
Specific examples of the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. be able to. Moreover, heat | fever and chemical curing types (two-component mixing), such as an epoxy type, can be mentioned. Moreover, hot-melt type polyamide, polyester, and polyolefin can be mentioned. Moreover, a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
なお、有機EL素子が熱処理により劣化する場合があるので、室温から80℃までに接着硬化できるものが好ましい。また、前記接着剤中に乾燥剤を分散させておいてもよい。封止部分への接着剤の塗布は市販のディスペンサーを使ってもよいし、スクリーン印刷のように印刷してもよい。
In addition, since an organic EL element may deteriorate by heat processing, what can be adhesively cured from room temperature to 80 ° C. is preferable. A desiccant may be dispersed in the adhesive. Application | coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print like screen printing.
また、有機層を挟み支持基板と対向する側の電極の外側に当該電極と有機層を被覆し、支持基板と接する形で無機物、有機物の層を形成し封止膜とすることも好適にできる。この場合、当該膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化ケイ素、二酸化ケイ素、窒化ケイ素等を用いることができる。
更に、当該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることが好ましい。これらの膜の形成方法については、特に限定はなく、例えば、真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスターイオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができる。 In addition, it is also preferable that the electrode and the organic layer are coated on the outside of the electrode facing the support substrate with the organic layer interposed therebetween, and an inorganic or organic layer is formed in contact with the support substrate to form a sealing film. . In this case, as a material for forming the film, any material may be used as long as it has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can.
Furthermore, in order to improve the brittleness of the film, it is preferable to have a laminated structure of these inorganic layers and layers made of organic materials. The method for forming these films is not particularly limited. For example, vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
更に、当該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることが好ましい。これらの膜の形成方法については、特に限定はなく、例えば、真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスターイオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができる。 In addition, it is also preferable that the electrode and the organic layer are coated on the outside of the electrode facing the support substrate with the organic layer interposed therebetween, and an inorganic or organic layer is formed in contact with the support substrate to form a sealing film. . In this case, as a material for forming the film, any material may be used as long as it has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can.
Furthermore, in order to improve the brittleness of the film, it is preferable to have a laminated structure of these inorganic layers and layers made of organic materials. The method for forming these films is not particularly limited. For example, vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
封止部材と有機EL素子の表示領域との間隙には、気相及び液相では、窒素、アルゴン等の不活性気体やフッ化炭化水素、シリコンオイルのような不活性液体を注入することが好ましい。また真空とすることも可能である。また、内部に吸湿性化合物を封入することもできる。
吸湿性化合物としては、例えば、金属酸化物(例えば、酸化ナトリウム、酸化カリウム、酸化カルシウム、酸化バリウム、酸化マグネシウム、酸化アルミニウム等)、硫酸塩(例えば、硫酸ナトリウム、硫酸カルシウム、硫酸マグネシウム、硫酸コバルト等)、金属ハロゲン化物(例えば、塩化カルシウム、塩化マグネシウム、フッ化セシウム、フッ化タンタル、臭化セリウム、臭化マグネシウム、ヨウ化バリウム、ヨウ化マグネシウム等)、過塩素酸類(例えば、過塩素酸バリウム、過塩素酸マグネシウム等)等が挙げられ、硫酸塩、金属ハロゲン化物及び過塩素酸類においては無水塩が好適に用いられる。 In the gap between the sealing member and the display area of the organic EL element, an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil can be injected in the gas phase and liquid phase. preferable. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.
Examples of the hygroscopic compound include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate). Etc.), metal halides (eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.), perchloric acids (eg perchloric acid) Barium, magnesium perchlorate, and the like), and anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
吸湿性化合物としては、例えば、金属酸化物(例えば、酸化ナトリウム、酸化カリウム、酸化カルシウム、酸化バリウム、酸化マグネシウム、酸化アルミニウム等)、硫酸塩(例えば、硫酸ナトリウム、硫酸カルシウム、硫酸マグネシウム、硫酸コバルト等)、金属ハロゲン化物(例えば、塩化カルシウム、塩化マグネシウム、フッ化セシウム、フッ化タンタル、臭化セリウム、臭化マグネシウム、ヨウ化バリウム、ヨウ化マグネシウム等)、過塩素酸類(例えば、過塩素酸バリウム、過塩素酸マグネシウム等)等が挙げられ、硫酸塩、金属ハロゲン化物及び過塩素酸類においては無水塩が好適に用いられる。 In the gap between the sealing member and the display area of the organic EL element, an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil can be injected in the gas phase and liquid phase. preferable. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.
Examples of the hygroscopic compound include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate). Etc.), metal halides (eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.), perchloric acids (eg perchloric acid) Barium, magnesium perchlorate, and the like), and anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
《保護膜、保護板》
有機層を挟み支持基板と対向する側の前記封止膜、又は前記封止用フィルムの外側に、素子の機械的強度を高めるために保護膜、又は保護板を設けてもよい。特に封止が前記封止膜により行われている場合には、その機械的強度は必ずしも高くないため、このような保護膜、保護板を設けることが好ましい。これに使用することができる材料としては、前記封止に用いたのと同様なガラス板、ポリマー板・フィルム、金属板・フィルム等を用いることができるが、軽量かつ薄膜化ということからポリマーフィルムを用いることが好ましい。 《Protective film, protective plate》
In order to increase the mechanical strength of the device, a protective film or a protective plate may be provided on the outer side of the sealing film on the side facing the support substrate with the organic layer interposed therebetween or the sealing film. In particular, when the sealing is performed by the sealing film, the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate. As a material that can be used for this, the same glass plate, polymer plate / film, metal plate / film, etc. used for the sealing can be used, but the polymer film is light and thin. Is preferably used.
有機層を挟み支持基板と対向する側の前記封止膜、又は前記封止用フィルムの外側に、素子の機械的強度を高めるために保護膜、又は保護板を設けてもよい。特に封止が前記封止膜により行われている場合には、その機械的強度は必ずしも高くないため、このような保護膜、保護板を設けることが好ましい。これに使用することができる材料としては、前記封止に用いたのと同様なガラス板、ポリマー板・フィルム、金属板・フィルム等を用いることができるが、軽量かつ薄膜化ということからポリマーフィルムを用いることが好ましい。 《Protective film, protective plate》
In order to increase the mechanical strength of the device, a protective film or a protective plate may be provided on the outer side of the sealing film on the side facing the support substrate with the organic layer interposed therebetween or the sealing film. In particular, when the sealing is performed by the sealing film, the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate. As a material that can be used for this, the same glass plate, polymer plate / film, metal plate / film, etc. used for the sealing can be used, but the polymer film is light and thin. Is preferably used.
《光取り出し》
有機EL素子は空気よりも屈折率の高い(屈折率が1.7~2.1程度)層の内部で発光し、発光層で発生した光のうち15~20%程度の光しか取り出せないことが一般的に言われている。これは、臨界角以上の角度θで界面(透明基板と空気との界面)に入射する光は、全反射を起こし素子外部に取り出すことができないことや、透明電極ないし発光層と透明基板との間で光が全反射を起こし、光が透明電極ないし発光層を導波し、結果として光が素子側面方向に逃げるためである。 《Light extraction》
The organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1) and can extract only about 15 to 20% of the light generated in the light emitting layer. Is generally said. This is because light incident on the interface (interface between the transparent substrate and air) at an angle θ greater than the critical angle causes total reflection and cannot be taken out of the device, or between the transparent electrode or light emitting layer and the transparent substrate. This is because the light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the element side surface.
有機EL素子は空気よりも屈折率の高い(屈折率が1.7~2.1程度)層の内部で発光し、発光層で発生した光のうち15~20%程度の光しか取り出せないことが一般的に言われている。これは、臨界角以上の角度θで界面(透明基板と空気との界面)に入射する光は、全反射を起こし素子外部に取り出すことができないことや、透明電極ないし発光層と透明基板との間で光が全反射を起こし、光が透明電極ないし発光層を導波し、結果として光が素子側面方向に逃げるためである。 《Light extraction》
The organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1) and can extract only about 15 to 20% of the light generated in the light emitting layer. Is generally said. This is because light incident on the interface (interface between the transparent substrate and air) at an angle θ greater than the critical angle causes total reflection and cannot be taken out of the device, or between the transparent electrode or light emitting layer and the transparent substrate. This is because the light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the element side surface.
この光の取り出しの効率を向上させる手法としては、例えば、透明基板表面に凹凸を形成し、透明基板と空気界面での全反射を防ぐ方法(米国特許第4774435号明細書)、基板に集光性を持たせることにより効率を向上させる方法(特開昭63-314795号公報)、素子の側面等に反射面を形成する方法(特開平1-220394号公報)、基板と発光体の間に中間の屈折率を持つ平坦層を導入し、反射防止膜を形成する方法(特開昭62-172691号公報)、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法(特開2001-202827号公報)、基板、透明電極層や発光層のいずれかの層間(基板と外界間を含む。)に回折格子を形成する方法(特開平11-283751号公報)等がある。
As a technique for improving the light extraction efficiency, for example, a method of forming irregularities on the surface of the transparent substrate to prevent total reflection at the interface between the transparent substrate and the air (US Pat. No. 4,774,435), condensing on the substrate. A method of improving the efficiency by imparting a property (Japanese Patent Laid-Open No. 63-314795), a method of forming a reflective surface on the side surface of the element (Japanese Patent Laid-Open No. 1-220394), and between the substrate and the light emitter A method of forming an antireflection film by introducing a flat layer having an intermediate refractive index (Japanese Patent Laid-Open No. 62-172691), and introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter. A method (Japanese Patent Laid-Open No. 2001-202827), a method of forming a diffraction grating between any one of the substrate, the transparent electrode layer and the light emitting layer (including between the substrate and the outside) (Japanese Patent Laid-Open No. 11-283751), etc. There is.
本発明においては、これらの方法を本発明の有機EL素子と組み合わせて用いることができるが、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法、又は基板、透明電極層や発光層のいずれかの層間(基板と外界間を含む。)に回折格子を形成する方法を好適に用いることができる。
本発明はこれらの手段を組み合わせることにより、更に高輝度又は耐久性に優れた素子を得ることができる。 In the present invention, these methods can be used in combination with the organic EL device of the present invention. However, a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, transparent A method of forming a diffraction grating between any one of the electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
In the present invention, by combining these means, it is possible to obtain an element having higher brightness or durability.
本発明はこれらの手段を組み合わせることにより、更に高輝度又は耐久性に優れた素子を得ることができる。 In the present invention, these methods can be used in combination with the organic EL device of the present invention. However, a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, transparent A method of forming a diffraction grating between any one of the electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
In the present invention, by combining these means, it is possible to obtain an element having higher brightness or durability.
透明電極と透明基板の間に低屈折率の媒質を光の波長よりも長い厚さで形成すると、透明電極から出てきた光は、媒質の屈折率が低いほど外部への取り出し効率が高くなる。
低屈折率層としては、例えば、エアロゲル、多孔質シリカ、フッ化マグネシウム、フッ素系ポリマー等が挙げられる。透明基板の屈折率は一般に1.5~1.7程度であるので、低屈折率層は屈折率がおよそ1.5以下であることが好ましい。また、更に1.35以下であることが好ましい。
また、低屈折率媒質の厚さは媒質中の波長の2倍以上となるのが望ましい。これは低屈折率媒質の厚さが、光の波長程度になってエバネッセントで染み出した電磁波が基板内に入り込む膜厚になると、低屈折率層の効果が薄れるからである。 When a medium with a low refractive index is formed between the transparent electrode and the transparent substrate with a thickness longer than the wavelength of light, the light extracted from the transparent electrode has a higher extraction efficiency to the outside as the refractive index of the medium is lower. .
Examples of the low refractive index layer include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less.
Further, the thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.
低屈折率層としては、例えば、エアロゲル、多孔質シリカ、フッ化マグネシウム、フッ素系ポリマー等が挙げられる。透明基板の屈折率は一般に1.5~1.7程度であるので、低屈折率層は屈折率がおよそ1.5以下であることが好ましい。また、更に1.35以下であることが好ましい。
また、低屈折率媒質の厚さは媒質中の波長の2倍以上となるのが望ましい。これは低屈折率媒質の厚さが、光の波長程度になってエバネッセントで染み出した電磁波が基板内に入り込む膜厚になると、低屈折率層の効果が薄れるからである。 When a medium with a low refractive index is formed between the transparent electrode and the transparent substrate with a thickness longer than the wavelength of light, the light extracted from the transparent electrode has a higher extraction efficiency to the outside as the refractive index of the medium is lower. .
Examples of the low refractive index layer include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less.
Further, the thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.
全反射を起こす界面若しくはいずれかの媒質中に回折格子を導入する方法は、光取り出し効率の向上効果が高いという特徴がある。この方法は回折格子が一次の回折や二次の回折といったいわゆるブラッグ回折により、光の向きを屈折とは異なる特定の向きに変えることができる性質を利用して、発光層から発生した光のうち層間での全反射等により外に出ることができない光を、いずれかの層間若しくは、媒質中(透明基板内や透明電極内)に回折格子を導入することで光を回折させ、光を外に取り出そうとするものである。
The method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency. This method uses the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction or second-order diffraction. Light that cannot be emitted due to total internal reflection, etc. is diffracted by introducing a diffraction grating in any layer or medium (in the transparent substrate or transparent electrode), and the light is emitted outside. I want to take it out.
導入する回折格子は、二次元的な周期屈折率を持っていることが望ましい。これは発光層で発光する光はあらゆる方向にランダムに発生するので、ある方向にのみ周期的な屈折率分布を持っている一般的な一次元回折格子では、特定の方向に進む光しか回折されず、光の取り出し効率がさほど上がらない。
しかしながら、屈折率分布を二次元的な分布にすることにより、あらゆる方向に進む光が回折され、光の取り出し効率が上がる。 The introduced diffraction grating desirably has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. Therefore, the light extraction efficiency does not increase so much.
However, by making the refractive index distribution a two-dimensional distribution, light traveling in all directions is diffracted, and light extraction efficiency is increased.
しかしながら、屈折率分布を二次元的な分布にすることにより、あらゆる方向に進む光が回折され、光の取り出し効率が上がる。 The introduced diffraction grating desirably has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. Therefore, the light extraction efficiency does not increase so much.
However, by making the refractive index distribution a two-dimensional distribution, light traveling in all directions is diffracted, and light extraction efficiency is increased.
回折格子を導入する位置としては前述のとおり、いずれかの層間若しくは媒質中(透明基板内や透明電極内)でもよいが、光が発生する場所である有機発光層の近傍が望ましい。
このとき、回折格子の周期は媒質中の光の波長の約1/2~3倍程度が好ましい。
回折格子の配列は正方形のラチス状、三角形のラチス状、ハニカムラチス状等、二次元的に配列が繰り返されることが好ましい。 As described above, the position where the diffraction grating is introduced may be in any one of the layers or in the medium (in the transparent substrate or the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.
At this time, the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.
The arrangement of the diffraction grating is preferably two-dimensionally repeated such as a square lattice, a triangular lattice, or a honeycomb lattice.
このとき、回折格子の周期は媒質中の光の波長の約1/2~3倍程度が好ましい。
回折格子の配列は正方形のラチス状、三角形のラチス状、ハニカムラチス状等、二次元的に配列が繰り返されることが好ましい。 As described above, the position where the diffraction grating is introduced may be in any one of the layers or in the medium (in the transparent substrate or the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.
At this time, the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.
The arrangement of the diffraction grating is preferably two-dimensionally repeated such as a square lattice, a triangular lattice, or a honeycomb lattice.
《集光シート》
本発明の有機EL素子は基板の光取り出し側に、例えば、マイクロレンズアレイ状の構造を設けるように加工したり、又はいわゆる集光シートと組み合わせることにより、特定方向、例えば、素子発光面に対し正面方向に集光することにより、特定方向上の輝度を高めることができる。
マイクロレンズアレイの例としては、基板の光取り出し側に一辺が30μmでその頂角が90度となるような四角錐を二次元に配列する。一辺は10~100μmが好ましい。これより小さくなると回折の効果が発生して色付く、大きすぎると厚さが厚くなり好ましくない。 <Condenser sheet>
The organic EL device of the present invention is processed on the light extraction side of the substrate, for example, so as to provide a microlens array-like structure, or in combination with a so-called condensing sheet, for example, with respect to a specific direction, for example, the device light emitting surface. By condensing in the front direction, the luminance in a specific direction can be increased.
As an example of the microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are arranged two-dimensionally on the light extraction side of the substrate. One side is preferably 10 to 100 μm. If it becomes smaller than this, the effect of diffraction will generate | occur | produce and color, and if too large, thickness will become thick and is not preferable.
本発明の有機EL素子は基板の光取り出し側に、例えば、マイクロレンズアレイ状の構造を設けるように加工したり、又はいわゆる集光シートと組み合わせることにより、特定方向、例えば、素子発光面に対し正面方向に集光することにより、特定方向上の輝度を高めることができる。
マイクロレンズアレイの例としては、基板の光取り出し側に一辺が30μmでその頂角が90度となるような四角錐を二次元に配列する。一辺は10~100μmが好ましい。これより小さくなると回折の効果が発生して色付く、大きすぎると厚さが厚くなり好ましくない。 <Condenser sheet>
The organic EL device of the present invention is processed on the light extraction side of the substrate, for example, so as to provide a microlens array-like structure, or in combination with a so-called condensing sheet, for example, with respect to a specific direction, for example, the device light emitting surface. By condensing in the front direction, the luminance in a specific direction can be increased.
As an example of the microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are arranged two-dimensionally on the light extraction side of the substrate. One side is preferably 10 to 100 μm. If it becomes smaller than this, the effect of diffraction will generate | occur | produce and color, and if too large, thickness will become thick and is not preferable.
集光シートとしては、例えば、液晶表示装置のLEDバックライトで実用化されているものを用いることが可能である。このようなシートとして、例えば、住友スリーエム社製輝度上昇フィルム(BEF)等を用いることができる。
プリズムシートの形状としては、例えば、基材に頂角90度、ピッチ50μmの△状のストライプが形成されたものであってもよいし、頂角が丸みを帯びた形状、ピッチをランダムに変化させた形状、その他の形状であってもよい。
また、発光素子からの光放射角を制御するために、光拡散板・フィルムを集光シートと併用してもよい。例えば、(株)きもと製拡散フィルム(ライトアップ)等を用いることができる。 As the condensing sheet, for example, a sheet that is put into practical use in an LED backlight of a liquid crystal display device can be used. As such a sheet, for example, a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used.
As the shape of the prism sheet, for example, the base material may be formed by forming a △ -shaped stripe having a vertex angle of 90 degrees and a pitch of 50 μm, or the vertex angle is rounded and the pitch is changed randomly. Other shapes may be used.
Moreover, in order to control the light emission angle from a light emitting element, you may use together a light diffusing plate and a film with a condensing sheet. For example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
プリズムシートの形状としては、例えば、基材に頂角90度、ピッチ50μmの△状のストライプが形成されたものであってもよいし、頂角が丸みを帯びた形状、ピッチをランダムに変化させた形状、その他の形状であってもよい。
また、発光素子からの光放射角を制御するために、光拡散板・フィルムを集光シートと併用してもよい。例えば、(株)きもと製拡散フィルム(ライトアップ)等を用いることができる。 As the condensing sheet, for example, a sheet that is put into practical use in an LED backlight of a liquid crystal display device can be used. As such a sheet, for example, a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used.
As the shape of the prism sheet, for example, the base material may be formed by forming a △ -shaped stripe having a vertex angle of 90 degrees and a pitch of 50 μm, or the vertex angle is rounded and the pitch is changed randomly. Other shapes may be used.
Moreover, in order to control the light emission angle from a light emitting element, you may use together a light diffusing plate and a film with a condensing sheet. For example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
《用途》
本発明の有機EL素子は、電子デバイス、表示装置、ディスプレイ、各種発光装置として用いることができる。発光装置として、例えば、照明装置(家庭用照明、車内照明)、時計や液晶用バックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるがこれに限定するものではないが、特に液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。 <Application>
The organic EL element of the present invention can be used as an electronic device, a display device, a display, and various light emitting devices. Examples of light emitting devices include lighting devices (home lighting, interior lighting), clocks and backlights for liquid crystals, billboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light Although the light source of a sensor etc. are mentioned, It is not limited to this, Especially, it can use effectively for the use as a backlight of a liquid crystal display device, and a light source for illumination.
本発明の有機EL素子は、電子デバイス、表示装置、ディスプレイ、各種発光装置として用いることができる。発光装置として、例えば、照明装置(家庭用照明、車内照明)、時計や液晶用バックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるがこれに限定するものではないが、特に液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。 <Application>
The organic EL element of the present invention can be used as an electronic device, a display device, a display, and various light emitting devices. Examples of light emitting devices include lighting devices (home lighting, interior lighting), clocks and backlights for liquid crystals, billboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light Although the light source of a sensor etc. are mentioned, It is not limited to this, Especially, it can use effectively for the use as a backlight of a liquid crystal display device, and a light source for illumination.
本発明の有機EL素子においては、必要に応じ成膜時にメタルマスクやインクジェットプリンティング法等でパターニングを施してもよい。パターニングする場合は、電極のみをパターニングしてもよいし、電極と発光層をパターニングしてもよいし、素子全層をパターニングしてもよく、素子の作製においては、従来公知の方法を用いることができる。
In the organic EL device of the present invention, patterning may be performed by a metal mask, an ink jet printing method, or the like during film formation, if necessary. In the case of patterning, only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire layer of the element may be patterned. In the fabrication of the element, a conventionally known method is used. Can do.
本発明の有機EL素子や本発明に係る化合物の発光する色は、「新編色彩科学ハンドブック」(日本色彩学会編、東京大学出版会、1985)の108頁の図7.16において、分光放射輝度計CS-1000(コニカミノルタ(株)製)で測定した結果をCIE色度座標に当てはめたときの色で決定される。
また、本発明の有機EL素子が白色素子の場合には、白色とは、2度視野角正面輝度を上記方法により測定した際に、1000cd/m2でのCIE1931表色系における色度がX=0.33±0.07、Y=0.33±0.1の領域内にあることをいう。 The light emission color of the organic EL device of the present invention and the compound according to the present invention is shown in FIG. 7.16 onpage 108 of “New Color Science Handbook” (edited by the Japan Color Society, University of Tokyo Press, 1985). It is determined by the color when the result measured with a total of CS-1000 (manufactured by Konica Minolta Co., Ltd.) is applied to the CIE chromaticity coordinates.
When the organic EL element of the present invention is a white element, white means that the chromaticity in the CIE1931 color system at 1000 cd / m 2 is X when the 2 ° viewing angle front luminance is measured by the above method. = 0.33 ± 0.07 and Y = 0.33 ± 0.1.
また、本発明の有機EL素子が白色素子の場合には、白色とは、2度視野角正面輝度を上記方法により測定した際に、1000cd/m2でのCIE1931表色系における色度がX=0.33±0.07、Y=0.33±0.1の領域内にあることをいう。 The light emission color of the organic EL device of the present invention and the compound according to the present invention is shown in FIG. 7.16 on
When the organic EL element of the present invention is a white element, white means that the chromaticity in the CIE1931 color system at 1000 cd / m 2 is X when the 2 ° viewing angle front luminance is measured by the above method. = 0.33 ± 0.07 and Y = 0.33 ± 0.1.
《表示装置》
本発明の表示装置について説明する。本発明の表示装置は、本発明の有機EL素子を具備したものである。本発明の表示装置は単色でも多色でもよいが、ここでは多色表示装置について説明する。
多色表示装置の場合は発光層形成時のみシャドーマスクを設け、一面に蒸着法、キャスト法、スピンコート法、インクジェット法、印刷法等で膜を形成できる。
発光層のみパターニングを行う場合、その方法に限定はないが、好ましくは蒸着法、インクジェット法、スピンコート法、印刷法である。 <Display device>
The display device of the present invention will be described. The display device of the present invention comprises the organic EL element of the present invention. Although the display device of the present invention may be single color or multicolor, the multicolor display device will be described here.
In the case of a multicolor display device, a shadow mask is provided only at the time of forming a light emitting layer, and a film can be formed on one surface by vapor deposition, casting, spin coating, ink jet, printing, or the like.
In the case of patterning only the light emitting layer, the method is not limited. However, the vapor deposition method, the ink jet method, the spin coating method, and the printing method are preferable.
本発明の表示装置について説明する。本発明の表示装置は、本発明の有機EL素子を具備したものである。本発明の表示装置は単色でも多色でもよいが、ここでは多色表示装置について説明する。
多色表示装置の場合は発光層形成時のみシャドーマスクを設け、一面に蒸着法、キャスト法、スピンコート法、インクジェット法、印刷法等で膜を形成できる。
発光層のみパターニングを行う場合、その方法に限定はないが、好ましくは蒸着法、インクジェット法、スピンコート法、印刷法である。 <Display device>
The display device of the present invention will be described. The display device of the present invention comprises the organic EL element of the present invention. Although the display device of the present invention may be single color or multicolor, the multicolor display device will be described here.
In the case of a multicolor display device, a shadow mask is provided only at the time of forming a light emitting layer, and a film can be formed on one surface by vapor deposition, casting, spin coating, ink jet, printing, or the like.
In the case of patterning only the light emitting layer, the method is not limited. However, the vapor deposition method, the ink jet method, the spin coating method, and the printing method are preferable.
表示装置に具備される有機EL素子の構成は、必要に応じて上記の有機EL素子の構成例の中から選択される。
また、有機EL素子の製造方法は、上記の本発明の有機EL素子の製造の一態様に示したとおりである。
このようにして得られた多色表示装置に直流電圧を印加する場合には、陽極を+、陰極を-の極性として電圧2~40V程度を印加すると発光が観測できる。また、逆の極性で電圧を印加しても電流は流れずに発光は全く生じない。更に交流電圧を印加する場合には、陽極が+、陰極が-の状態になったときのみ発光する。なお、印加する交流の波形は任意でよい。 The configuration of the organic EL element provided in the display device is selected from the above-described configuration examples of the organic EL element as necessary.
Moreover, the manufacturing method of an organic EL element is as having shown to the one aspect | mode of manufacture of the organic EL element of said invention.
When a DC voltage is applied to the multicolor display device thus obtained, light emission can be observed by applying a voltage of about 2 to 40 V with the positive polarity of the anode and the negative polarity of the cathode. Further, even when a voltage is applied with the opposite polarity, no current flows and no light emission occurs. Further, when an AC voltage is applied, light is emitted only when the anode is in the + state and the cathode is in the-state. The alternating current waveform to be applied may be arbitrary.
また、有機EL素子の製造方法は、上記の本発明の有機EL素子の製造の一態様に示したとおりである。
このようにして得られた多色表示装置に直流電圧を印加する場合には、陽極を+、陰極を-の極性として電圧2~40V程度を印加すると発光が観測できる。また、逆の極性で電圧を印加しても電流は流れずに発光は全く生じない。更に交流電圧を印加する場合には、陽極が+、陰極が-の状態になったときのみ発光する。なお、印加する交流の波形は任意でよい。 The configuration of the organic EL element provided in the display device is selected from the above-described configuration examples of the organic EL element as necessary.
Moreover, the manufacturing method of an organic EL element is as having shown to the one aspect | mode of manufacture of the organic EL element of said invention.
When a DC voltage is applied to the multicolor display device thus obtained, light emission can be observed by applying a voltage of about 2 to 40 V with the positive polarity of the anode and the negative polarity of the cathode. Further, even when a voltage is applied with the opposite polarity, no current flows and no light emission occurs. Further, when an AC voltage is applied, light is emitted only when the anode is in the + state and the cathode is in the-state. The alternating current waveform to be applied may be arbitrary.
多色表示装置は、表示デバイス、ディスプレイ、各種発光光源として用いることができる。表示デバイス、ディスプレイにおいて、青、赤、緑発光の3種の有機EL素子を用いることによりフルカラーの表示が可能となる。
表示デバイス、ディスプレイとしては、テレビ、パソコン、モバイル機器、AV機器、文字放送表示、自動車内の情報表示等が挙げられる。特に静止画像や動画像を再生する表示装置として使用してもよく、動画再生用の表示装置として使用する場合の駆動方式は単純マトリクス(パッシブマトリクス)方式でもアクティブマトリクス方式でもどちらでもよい。
発光光源としては家庭用照明、車内照明、時計や液晶用のバックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、本発明はこれらに限定されない。 The multicolor display device can be used as a display device, a display, and various light emission sources. In a display device or display, full-color display is possible by using three types of organic EL elements of blue, red, and green light emission.
Examples of the display device and display include a television, a personal computer, a mobile device, an AV device, a character broadcast display, and an information display in an automobile. In particular, it may be used as a display device for reproducing still images and moving images, and the driving method when used as a display device for reproducing moving images may be either a simple matrix (passive matrix) method or an active matrix method.
Light sources include home lighting, interior lighting, clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, light sources for optical sensors, etc. The present invention is not limited to these examples.
表示デバイス、ディスプレイとしては、テレビ、パソコン、モバイル機器、AV機器、文字放送表示、自動車内の情報表示等が挙げられる。特に静止画像や動画像を再生する表示装置として使用してもよく、動画再生用の表示装置として使用する場合の駆動方式は単純マトリクス(パッシブマトリクス)方式でもアクティブマトリクス方式でもどちらでもよい。
発光光源としては家庭用照明、車内照明、時計や液晶用のバックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、本発明はこれらに限定されない。 The multicolor display device can be used as a display device, a display, and various light emission sources. In a display device or display, full-color display is possible by using three types of organic EL elements of blue, red, and green light emission.
Examples of the display device and display include a television, a personal computer, a mobile device, an AV device, a character broadcast display, and an information display in an automobile. In particular, it may be used as a display device for reproducing still images and moving images, and the driving method when used as a display device for reproducing moving images may be either a simple matrix (passive matrix) method or an active matrix method.
Light sources include home lighting, interior lighting, clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, light sources for optical sensors, etc. The present invention is not limited to these examples.
以下、本発明の有機EL素子を有する表示装置の一例を図面に基づいて説明する。
図1は有機EL素子から構成される表示装置の一例を示した模式図である。有機EL素子の発光により画像情報の表示を行う、例えば、携帯電話等のディスプレイの模式図である。 Hereinafter, an example of a display device having the organic EL element of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic view showing an example of a display device composed of organic EL elements. It is a schematic diagram of a display such as a mobile phone that displays image information by light emission of an organic EL element.
図1は有機EL素子から構成される表示装置の一例を示した模式図である。有機EL素子の発光により画像情報の表示を行う、例えば、携帯電話等のディスプレイの模式図である。 Hereinafter, an example of a display device having the organic EL element of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic view showing an example of a display device composed of organic EL elements. It is a schematic diagram of a display such as a mobile phone that displays image information by light emission of an organic EL element.
ディスプレイ1は複数の画素を有する表示部A、画像情報に基づいて表示部Aの画像走査を行う制御部B、表示部Aと制御部Bとを電気的に接続する配線部C等を有する。
制御部Bは表示部Aと配線部Cを介して電気的に接続され、複数の画素それぞれに外部からの画像情報に基づいて走査信号と画像データ信号を送り、走査信号により走査線ごとの画素が画像データ信号に応じて順次発光して画像走査を行って画像情報を表示部Aに表示する。 The display 1 includes a display unit A having a plurality of pixels, a control unit B that performs image scanning of the display unit A based on image information, a wiring unit C that electrically connects the display unit A and the control unit B, and the like.
The control unit B is electrically connected to the display unit A via the wiring unit C, and sends a scanning signal and an image data signal to each of a plurality of pixels based on image information from the outside. Sequentially emit light according to the image data signal, scan the image, and display the image information on the display unit A.
制御部Bは表示部Aと配線部Cを介して電気的に接続され、複数の画素それぞれに外部からの画像情報に基づいて走査信号と画像データ信号を送り、走査信号により走査線ごとの画素が画像データ信号に応じて順次発光して画像走査を行って画像情報を表示部Aに表示する。 The display 1 includes a display unit A having a plurality of pixels, a control unit B that performs image scanning of the display unit A based on image information, a wiring unit C that electrically connects the display unit A and the control unit B, and the like.
The control unit B is electrically connected to the display unit A via the wiring unit C, and sends a scanning signal and an image data signal to each of a plurality of pixels based on image information from the outside. Sequentially emit light according to the image data signal, scan the image, and display the image information on the display unit A.
図2はアクティブマトリクス方式による表示装置の模式図である。
表示部Aは基板上に、複数の走査線5及びデータ線6を含む配線部Cと複数の画素3等とを有する。表示部Aの主要な部材の説明を以下に行う。
図2においては、画素3の発光した光(発光光L)が白矢印方向(下方向)へ取り出される場合を示している。 FIG. 2 is a schematic diagram of a display device using an active matrix method.
The display unit A includes a wiring unit C including a plurality ofscanning lines 5 and data lines 6, a plurality of pixels 3 and the like on a substrate. The main members of the display unit A will be described below.
FIG. 2 shows a case where the light emitted from the pixel 3 (the emitted light L) is extracted in the white arrow direction (downward).
表示部Aは基板上に、複数の走査線5及びデータ線6を含む配線部Cと複数の画素3等とを有する。表示部Aの主要な部材の説明を以下に行う。
図2においては、画素3の発光した光(発光光L)が白矢印方向(下方向)へ取り出される場合を示している。 FIG. 2 is a schematic diagram of a display device using an active matrix method.
The display unit A includes a wiring unit C including a plurality of
FIG. 2 shows a case where the light emitted from the pixel 3 (the emitted light L) is extracted in the white arrow direction (downward).
配線部の走査線5及び複数のデータ線6はそれぞれ導電材料からなり、走査線5とデータ線6は格子状に直交して、直交する位置で画素3に接続している(詳細は図示していない)。
画素3は走査線5から走査信号が印加されると、データ線6から画像データ信号を受け取り、受け取った画像データに応じて発光する。
発光の色が赤領域の画素、緑領域の画素、青領域の画素を適宜同一基板上に並置することによって、フルカラー表示が可能となる。 Thescanning line 5 and the plurality of data lines 6 in the wiring portion are each made of a conductive material, and the scanning lines 5 and the data lines 6 are orthogonal to each other in a grid pattern and are connected to the pixels 3 at the orthogonal positions (details are illustrated Not)
When a scanning signal is applied from thescanning line 5, the pixel 3 receives an image data signal from the data line 6 and emits light according to the received image data.
Full-color display is possible by appropriately arranging pixels in the red region, the green region, and the blue region on the same substrate.
画素3は走査線5から走査信号が印加されると、データ線6から画像データ信号を受け取り、受け取った画像データに応じて発光する。
発光の色が赤領域の画素、緑領域の画素、青領域の画素を適宜同一基板上に並置することによって、フルカラー表示が可能となる。 The
When a scanning signal is applied from the
Full-color display is possible by appropriately arranging pixels in the red region, the green region, and the blue region on the same substrate.
次に、画素の発光プロセスを説明する。図3は画素の回路を示した概略図である。
画素は、有機EL素子10、スイッチングトランジスタ11、駆動トランジスタ12、コンデンサー13等を備えている。複数の画素に有機EL素子10として、赤色、緑色及び青色発光の有機EL素子を用い、これらを同一基板上に並置することでフルカラー表示を行うことができる。 Next, the light emission process of the pixel will be described. FIG. 3 is a schematic diagram showing a pixel circuit.
The pixel includes anorganic EL element 10, a switching transistor 11, a driving transistor 12, a capacitor 13, and the like. A full color display can be performed by using red, green, and blue light emitting organic EL elements as the organic EL elements 10 in a plurality of pixels, and juxtaposing them on the same substrate.
画素は、有機EL素子10、スイッチングトランジスタ11、駆動トランジスタ12、コンデンサー13等を備えている。複数の画素に有機EL素子10として、赤色、緑色及び青色発光の有機EL素子を用い、これらを同一基板上に並置することでフルカラー表示を行うことができる。 Next, the light emission process of the pixel will be described. FIG. 3 is a schematic diagram showing a pixel circuit.
The pixel includes an
図3において、制御部Bからデータ線6を介してスイッチングトランジスタ11のドレインに画像データ信号が印加される。そして、制御部Bから走査線5を介してスイッチングトランジスタ11のゲートに走査信号が印加されると、スイッチングトランジスタ11の駆動がオンし、ドレインに印加された画像データ信号がコンデンサー13と駆動トランジスタ12のゲートに伝達される。
3, an image data signal is applied from the control unit B to the drain of the switching transistor 11 via the data line 6. When a scanning signal is applied from the control unit B to the gate of the switching transistor 11 via the scanning line 5, the driving of the switching transistor 11 is turned on, and the image data signal applied to the drain is supplied to the capacitor 13 and the driving transistor 12. Is transmitted to the gate.
画像データ信号の伝達により、コンデンサー13が画像データ信号の電位に応じて充電されるとともに、駆動トランジスタ12の駆動がオンする。駆動トランジスタ12は、ドレインが電源ライン7に接続され、ソースが有機EL素子10の電極に接続されており、ゲートに印加された画像データ信号の電位に応じて電源ライン7から有機EL素子10に電流が供給される。
By transmitting the image data signal, the capacitor 13 is charged according to the potential of the image data signal, and the drive transistor 12 is turned on. The drive transistor 12 has a drain connected to the power supply line 7 and a source connected to the electrode of the organic EL element 10, and the power supply line 7 connects to the organic EL element 10 according to the potential of the image data signal applied to the gate. Current is supplied.
制御部Bの順次走査により走査信号が次の走査線5に移ると、スイッチングトランジスタ11の駆動がオフする。しかし、スイッチングトランジスタ11の駆動がオフしてもコンデンサー13は充電された画像データ信号の電位を保持するので、駆動トランジスタ12の駆動はオン状態が保たれて、次の走査信号の印加が行われるまで有機EL素子10の発光が継続する。順次走査により次に走査信号が印加されたとき、走査信号に同期した次の画像データ信号の電位に応じて駆動トランジスタ12が駆動して有機EL素子10が発光する。
すなわち、有機EL素子10の発光は、複数の画素それぞれの有機EL素子10に対して、アクティブ素子であるスイッチングトランジスタ11と駆動トランジスタ12を設けて、複数の画素3それぞれの有機EL素子10の発光を行っている。このような発光方法をアクティブマトリクス方式と呼んでいる。 When the scanning signal is moved to thenext scanning line 5 by the sequential scanning of the control unit B, the driving of the switching transistor 11 is turned off. However, since the capacitor 13 holds the charged potential of the image data signal even if the driving of the switching transistor 11 is turned off, the driving of the driving transistor 12 is kept on and the next scanning signal is applied. Until then, the light emission of the organic EL element 10 continues. When the scanning signal is next applied by sequential scanning, the driving transistor 12 is driven according to the potential of the next image data signal synchronized with the scanning signal, and the organic EL element 10 emits light.
That is, theorganic EL element 10 emits light by the switching transistor 11 and the drive transistor 12 that are active elements for the organic EL element 10 of each of the plurality of pixels, and the light emission of the organic EL element 10 of each of the plurality of pixels 3. It is carried out. Such a light emitting method is called an active matrix method.
すなわち、有機EL素子10の発光は、複数の画素それぞれの有機EL素子10に対して、アクティブ素子であるスイッチングトランジスタ11と駆動トランジスタ12を設けて、複数の画素3それぞれの有機EL素子10の発光を行っている。このような発光方法をアクティブマトリクス方式と呼んでいる。 When the scanning signal is moved to the
That is, the
ここで、有機EL素子10の発光は複数の階調電位を持つ多値の画像データ信号による複数の階調の発光でもよいし、2値の画像データ信号による所定の発光量のオン、オフでもよい。また、コンデンサー13の電位の保持は次の走査信号の印加まで継続して保持してもよいし、次の走査信号が印加される直前に放電させてもよい。
本発明においては、上述したアクティブマトリクス方式に限らず、走査信号が走査されたときのみデータ信号に応じて有機EL素子を発光させるパッシブマトリクス方式の発光駆動でもよい。 Here, the light emission of theorganic EL element 10 may be light emission of a plurality of gradations by a multi-value image data signal having a plurality of gradation potentials, or by turning on / off a predetermined light emission amount by a binary image data signal. Good. The potential of the capacitor 13 may be held continuously until the next scanning signal is applied, or may be discharged immediately before the next scanning signal is applied.
In the present invention, not only the active matrix method described above, but also a passive matrix light emission drive in which the organic EL element emits light according to the data signal only when the scanning signal is scanned.
本発明においては、上述したアクティブマトリクス方式に限らず、走査信号が走査されたときのみデータ信号に応じて有機EL素子を発光させるパッシブマトリクス方式の発光駆動でもよい。 Here, the light emission of the
In the present invention, not only the active matrix method described above, but also a passive matrix light emission drive in which the organic EL element emits light according to the data signal only when the scanning signal is scanned.
図4は、パッシブマトリクス方式による表示装置の模式図である。図4において、複数の走査線5と複数の画像データ線6が画素3を挟んで対向して格子状に設けられている。
順次走査により走査線5の走査信号が印加されたとき、印加された走査線5に接続している画素3が画像データ信号に応じて発光する。
パッシブマトリクス方式では画素3にアクティブ素子が無く、製造コストの低減が計れる。
本発明の有機EL素子を用いることにより、発光効率が向上した表示装置が得られた。 FIG. 4 is a schematic view of a passive matrix display device. In FIG. 4, a plurality ofscanning lines 5 and a plurality of image data lines 6 are provided in a lattice shape so as to face each other with the pixel 3 interposed therebetween.
When the scanning signal of thescanning line 5 is applied by sequential scanning, the pixels 3 connected to the applied scanning line 5 emit light according to the image data signal.
In the passive matrix system, thepixel 3 has no active element, and the manufacturing cost can be reduced.
By using the organic EL element of the present invention, a display device with improved luminous efficiency was obtained.
順次走査により走査線5の走査信号が印加されたとき、印加された走査線5に接続している画素3が画像データ信号に応じて発光する。
パッシブマトリクス方式では画素3にアクティブ素子が無く、製造コストの低減が計れる。
本発明の有機EL素子を用いることにより、発光効率が向上した表示装置が得られた。 FIG. 4 is a schematic view of a passive matrix display device. In FIG. 4, a plurality of
When the scanning signal of the
In the passive matrix system, the
By using the organic EL element of the present invention, a display device with improved luminous efficiency was obtained.
<照明装置>
本発明の有機EL素子は、照明装置に用いることもできる。
本発明の有機EL素子は、共振器構造を持たせた有機EL素子として用いてもよい。このような共振器構造を有した有機EL素子の使用目的としては、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、これらに限定されない。また、レーザー発振をさせることにより上記用途に使用してもよい。
また、本発明の有機EL素子は、照明用や露光光源のような一種のランプとして使用してもよいし、画像を投影するタイプのプロジェクション装置や、静止画像や動画像を直接視認するタイプの表示装置(ディスプレイ)として使用してもよい。
動画再生用の表示装置として使用する場合の駆動方式は、パッシブマトリクス方式でもアクティブマトリクス方式でもどちらでもよい。または、異なる発光色を有する本発明の有機EL素子を2種以上使用することにより、フルカラー表示装置を作製することが可能である。 <Lighting device>
The organic EL element of the present invention can also be used for a lighting device.
The organic EL element of the present invention may be used as an organic EL element having a resonator structure. Examples of the purpose of use of the organic EL element having such a resonator structure include a light source of an optical storage medium, a light source of an electrophotographic copying machine, a light source of an optical communication processing machine, and a light source of an optical sensor. It is not limited. Moreover, you may use for the said use by making a laser oscillation.
Further, the organic EL element of the present invention may be used as a kind of lamp for illumination or exposure light source, a projection device for projecting an image, or a type for directly viewing a still image or a moving image. It may be used as a display device (display).
The driving method when used as a display device for reproducing a moving image may be either a passive matrix method or an active matrix method. Alternatively, a full-color display device can be manufactured by using two or more organic EL elements of the present invention having different emission colors.
本発明の有機EL素子は、照明装置に用いることもできる。
本発明の有機EL素子は、共振器構造を持たせた有機EL素子として用いてもよい。このような共振器構造を有した有機EL素子の使用目的としては、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、これらに限定されない。また、レーザー発振をさせることにより上記用途に使用してもよい。
また、本発明の有機EL素子は、照明用や露光光源のような一種のランプとして使用してもよいし、画像を投影するタイプのプロジェクション装置や、静止画像や動画像を直接視認するタイプの表示装置(ディスプレイ)として使用してもよい。
動画再生用の表示装置として使用する場合の駆動方式は、パッシブマトリクス方式でもアクティブマトリクス方式でもどちらでもよい。または、異なる発光色を有する本発明の有機EL素子を2種以上使用することにより、フルカラー表示装置を作製することが可能である。 <Lighting device>
The organic EL element of the present invention can also be used for a lighting device.
The organic EL element of the present invention may be used as an organic EL element having a resonator structure. Examples of the purpose of use of the organic EL element having such a resonator structure include a light source of an optical storage medium, a light source of an electrophotographic copying machine, a light source of an optical communication processing machine, and a light source of an optical sensor. It is not limited. Moreover, you may use for the said use by making a laser oscillation.
Further, the organic EL element of the present invention may be used as a kind of lamp for illumination or exposure light source, a projection device for projecting an image, or a type for directly viewing a still image or a moving image. It may be used as a display device (display).
The driving method when used as a display device for reproducing a moving image may be either a passive matrix method or an active matrix method. Alternatively, a full-color display device can be manufactured by using two or more organic EL elements of the present invention having different emission colors.
また、本発明の発光性化合物は、照明装置として、実質的に白色の発光を生じる有機EL素子に適用できる。例えば、複数の発光材料を用いる場合、複数の発光色を同時に発光させて、混色することで白色発光を得ることができる。複数の発光色の組み合わせとしては、赤色、緑色及び青色の三原色の三つの発光極大波長を含有させたものでもよいし、青色と黄色、青緑と橙色等の補色の関係を利用した二つの発光極大波長を含有したものでもよい。
Further, the luminescent compound of the present invention can be applied to an organic EL element that emits substantially white light as a lighting device. For example, when a plurality of light emitting materials are used, white light emission can be obtained by simultaneously emitting a plurality of light emission colors and mixing the colors. As a combination of a plurality of light emission colors, the light emission may include three light emission maximum wavelengths of three primary colors of red, green and blue, or two light emission utilizing a complementary color relationship such as blue and yellow, blue green and orange, etc. It may contain a maximum wavelength.
また、本発明の有機EL素子の形成方法は、発光層、正孔輸送層又は電子輸送層等の形成時のみマスクを設け、マスクにより塗り分ける等単純に配置するだけでよい。他層は共通であるのでマスク等のパターニングは不要であり、一面に蒸着法、キャスト法、スピンコート法、インクジェット法及び印刷法等で、例えば、電極膜を形成でき、生産性も向上する。
この方法によれば、複数色の発光素子をアレー状に並列配置した白色有機EL装置と異なり、素子自体が発光白色である。 In addition, the method for forming the organic EL device of the present invention may be simply arranged by providing a mask only when forming a light emitting layer, a hole transport layer, an electron transport layer, or the like, and separately coating with the mask. Since the other layers are common, patterning of a mask or the like is unnecessary, and for example, an electrode film can be formed on one surface by a vapor deposition method, a cast method, a spin coating method, an ink jet method, a printing method, or the like, and productivity is improved.
According to this method, unlike a white organic EL device in which light emitting elements of a plurality of colors are arranged in parallel in an array, the elements themselves are luminescent white.
この方法によれば、複数色の発光素子をアレー状に並列配置した白色有機EL装置と異なり、素子自体が発光白色である。 In addition, the method for forming the organic EL device of the present invention may be simply arranged by providing a mask only when forming a light emitting layer, a hole transport layer, an electron transport layer, or the like, and separately coating with the mask. Since the other layers are common, patterning of a mask or the like is unnecessary, and for example, an electrode film can be formed on one surface by a vapor deposition method, a cast method, a spin coating method, an ink jet method, a printing method, or the like, and productivity is improved.
According to this method, unlike a white organic EL device in which light emitting elements of a plurality of colors are arranged in parallel in an array, the elements themselves are luminescent white.
[本発明の照明装置の一態様]
本発明の有機EL素子を具備した、本発明の照明装置の一態様について説明する。
本発明の有機EL素子の非発光面をガラスケースで覆い、厚さ300μmのガラス基板を封止用基板として用いて、周囲にシール材として、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを陰極上に重ねて透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止し、図5及び図6に示すような照明装置を形成することができる。
図5は、照明装置の概略図を示し、本発明の有機EL素子(照明装置内の有機EL素子101)はガラスカバー102で覆われている(なお、ガラスカバーでの封止作業は、照明装置内の有機EL素子101を大気に接触させることなく窒素雰囲気下のグローブボックス(純度99.999%以上の高純度窒素ガスの雰囲気下)で行った。)。
図6は、照明装置の断面図を示し、図6において、105は陰極、106は有機層、107は透明電極付きガラス基板を示す。なお、ガラスカバー102内には窒素ガス108が充填され、捕水剤109が設けられている。
本発明の有機EL素子を用いることにより、発光効率が向上した照明装置が得られた。 [One Embodiment of Lighting Device of the Present Invention]
One aspect of the lighting device of the present invention that includes the organic EL element of the present invention will be described.
The non-light emitting surface of the organic EL device of the present invention is covered with a glass case, a 300 μm thick glass substrate is used as a sealing substrate, and an epoxy photocurable adhesive (LUX The track LC0629B) is applied, and this is overlaid on the cathode and brought into close contact with the transparent support substrate, irradiated with UV light from the glass substrate side, cured, sealed, and illuminated as shown in FIGS. A device can be formed.
FIG. 5 shows a schematic diagram of the lighting device, and the organic EL element of the present invention (organic EL element 101 in the lighting device) is covered with a glass cover 102 (note that the sealing operation with the glass cover is performed by lighting. This was performed in a glove box under a nitrogen atmosphere (in an atmosphere of high-purity nitrogen gas having a purity of 99.999% or more) without bringing the organic EL element 101 in the apparatus into contact with the air.
FIG. 6 is a cross-sectional view of the lighting device. In FIG. 6,reference numeral 105 denotes a cathode, 106 denotes an organic layer, and 107 denotes a glass substrate with a transparent electrode. The glass cover 102 is filled with nitrogen gas 108 and a water catching agent 109 is provided.
By using the organic EL element of the present invention, an illumination device with improved luminous efficiency was obtained.
本発明の有機EL素子を具備した、本発明の照明装置の一態様について説明する。
本発明の有機EL素子の非発光面をガラスケースで覆い、厚さ300μmのガラス基板を封止用基板として用いて、周囲にシール材として、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを陰極上に重ねて透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止し、図5及び図6に示すような照明装置を形成することができる。
図5は、照明装置の概略図を示し、本発明の有機EL素子(照明装置内の有機EL素子101)はガラスカバー102で覆われている(なお、ガラスカバーでの封止作業は、照明装置内の有機EL素子101を大気に接触させることなく窒素雰囲気下のグローブボックス(純度99.999%以上の高純度窒素ガスの雰囲気下)で行った。)。
図6は、照明装置の断面図を示し、図6において、105は陰極、106は有機層、107は透明電極付きガラス基板を示す。なお、ガラスカバー102内には窒素ガス108が充填され、捕水剤109が設けられている。
本発明の有機EL素子を用いることにより、発光効率が向上した照明装置が得られた。 [One Embodiment of Lighting Device of the Present Invention]
One aspect of the lighting device of the present invention that includes the organic EL element of the present invention will be described.
The non-light emitting surface of the organic EL device of the present invention is covered with a glass case, a 300 μm thick glass substrate is used as a sealing substrate, and an epoxy photocurable adhesive (LUX The track LC0629B) is applied, and this is overlaid on the cathode and brought into close contact with the transparent support substrate, irradiated with UV light from the glass substrate side, cured, sealed, and illuminated as shown in FIGS. A device can be formed.
FIG. 5 shows a schematic diagram of the lighting device, and the organic EL element of the present invention (
FIG. 6 is a cross-sectional view of the lighting device. In FIG. 6,
By using the organic EL element of the present invention, an illumination device with improved luminous efficiency was obtained.
以下、実施例により本発明を詳細に説明するが、本発明はこれらに限定されない。
陽極として100mm×100mm×1.1mmのガラス基板上にITOを100nm成膜した基板(NHテクノグラス社製NA45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。
この透明支持基板上に、ポリ(3,4-エチレンジオキシチオフェン)-ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を用いて3000rpm、30秒の条件下、スピンコート法により薄膜を形成した後、200℃にて1時間乾燥し、層厚20nmの第1正孔輸送層を設けた。 EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these.
After patterning on a substrate (NA45 manufactured by NH Techno Glass Co., Ltd.) with a 100 nm ITO film formed on a 100 mm × 100 mm × 1.1 mm glass substrate as an anode, the transparent support substrate provided with this ITO transparent electrode was made of isopropyl alcohol. Ultrasonic cleaning, drying with dry nitrogen gas, and UV ozone cleaning were performed for 5 minutes.
On this transparent support substrate, using a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water, 3000 rpm, A thin film was formed by spin coating under conditions of 30 seconds and then dried at 200 ° C. for 1 hour to provide a first hole transport layer having a layer thickness of 20 nm.
陽極として100mm×100mm×1.1mmのガラス基板上にITOを100nm成膜した基板(NHテクノグラス社製NA45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。
この透明支持基板上に、ポリ(3,4-エチレンジオキシチオフェン)-ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を用いて3000rpm、30秒の条件下、スピンコート法により薄膜を形成した後、200℃にて1時間乾燥し、層厚20nmの第1正孔輸送層を設けた。 EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these.
After patterning on a substrate (NA45 manufactured by NH Techno Glass Co., Ltd.) with a 100 nm ITO film formed on a 100 mm × 100 mm × 1.1 mm glass substrate as an anode, the transparent support substrate provided with this ITO transparent electrode was made of isopropyl alcohol. Ultrasonic cleaning, drying with dry nitrogen gas, and UV ozone cleaning were performed for 5 minutes.
On this transparent support substrate, using a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water, 3000 rpm, A thin film was formed by spin coating under conditions of 30 seconds and then dried at 200 ° C. for 1 hour to provide a first hole transport layer having a layer thickness of 20 nm.
この透明支持基板を市販の真空蒸着装置の基板ホルダーに固定し、一方モリブデン製抵抗加熱ボートにα-NPD(N,N′-Diphenyl-N,N′-bis(1-naphthalenyl)-1,1′-biphenyl-4,4′-diamine)を200mg入れ、別のモリブデン製抵抗加熱ボートにホスト化合物OC-4を200mg入れ、別のモリブデン製抵抗加熱ボートにドーパント(比較化合物1)を200mg入れ、別のモリブデン製抵抗加熱ボートにBCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline)を200mg入れ真空蒸着装置に取り付けた。
次いで真空槽を4×10-4Paまで減圧した後、α-NPDの入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/秒で、前記正孔注入層上に蒸着し30nmの正孔輸送層を設けた。 This transparent support substrate is fixed to a substrate holder of a commercially available vacuum deposition apparatus, while α-NPD (N, N′-Diphenyl-N, N′-bis (1-naphthalenyl) -1,1 is attached to a resistance heating boat made of molybdenum. 200 mg of ′ -biphenyl-4,4′-diamin), 200 mg of the host compound OC-4 in another resistance heating boat made of molybdenum, 200 mg of the dopant (Comparative Compound 1) in another resistance heating boat made of molybdenum, Another molybdenum resistance heating boat was charged with 200 mg of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and attached to a vacuum deposition apparatus.
The vacuum chamber was then depressurized to 4 × 10 −4 Pa, heated by energizing the heating boat containing α-NPD, and deposited on the hole injection layer at a deposition rate of 0.1 nm / sec. The hole transport layer was provided.
次いで真空槽を4×10-4Paまで減圧した後、α-NPDの入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/秒で、前記正孔注入層上に蒸着し30nmの正孔輸送層を設けた。 This transparent support substrate is fixed to a substrate holder of a commercially available vacuum deposition apparatus, while α-NPD (N, N′-Diphenyl-N, N′-bis (1-naphthalenyl) -1,1 is attached to a resistance heating boat made of molybdenum. 200 mg of ′ -biphenyl-4,4′-diamin), 200 mg of the host compound OC-4 in another resistance heating boat made of molybdenum, 200 mg of the dopant (Comparative Compound 1) in another resistance heating boat made of molybdenum, Another molybdenum resistance heating boat was charged with 200 mg of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and attached to a vacuum deposition apparatus.
The vacuum chamber was then depressurized to 4 × 10 −4 Pa, heated by energizing the heating boat containing α-NPD, and deposited on the hole injection layer at a deposition rate of 0.1 nm / sec. The hole transport layer was provided.
更にホスト化合物OC-4の入った前記加熱ボートと比較化合物1の入った前記加熱ボートに通電して加熱し、それぞれ蒸着速度0.1nm/秒、0.010nm/秒で、前記正孔輸送層上に共蒸着し40nmの発光層を設けた。
更にBCPの入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/秒で、前記正孔阻止層上に蒸着し30nmの電子輸送層を設けた。
引き続き、陰極バッファー層としてフッ化リチウム0.5nmを蒸着し、更にアルミニウム110nmを蒸着して陰極を形成し、有機EL素子1-1を作製した。 Furthermore, the hole-transporting layer was heated by energizing the heating boat containing the host compound OC-4 and the heating boat containing the comparative compound 1 at a deposition rate of 0.1 nm / second and 0.010 nm / second, respectively. A 40 nm light-emitting layer was provided by co-evaporation.
Furthermore, the heating boat containing BCP was energized and heated, and was deposited on the hole blocking layer at a deposition rate of 0.1 nm / second to provide an electron transport layer of 30 nm.
Subsequently, lithium fluoride 0.5 nm was deposited as a cathode buffer layer, and aluminum 110 nm was further deposited to form a cathode, thereby fabricating an organic EL device 1-1.
更にBCPの入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/秒で、前記正孔阻止層上に蒸着し30nmの電子輸送層を設けた。
引き続き、陰極バッファー層としてフッ化リチウム0.5nmを蒸着し、更にアルミニウム110nmを蒸着して陰極を形成し、有機EL素子1-1を作製した。 Furthermore, the hole-transporting layer was heated by energizing the heating boat containing the host compound OC-4 and the heating boat containing the comparative compound 1 at a deposition rate of 0.1 nm / second and 0.010 nm / second, respectively. A 40 nm light-emitting layer was provided by co-evaporation.
Furthermore, the heating boat containing BCP was energized and heated, and was deposited on the hole blocking layer at a deposition rate of 0.1 nm / second to provide an electron transport layer of 30 nm.
Subsequently, lithium fluoride 0.5 nm was deposited as a cathode buffer layer, and aluminum 110 nm was further deposited to form a cathode, thereby fabricating an organic EL device 1-1.
《有機EL素子1-2~1-20の作製》
有機EL素子1-1の作製において、発光層におけるホスト化合物及びドーパントを表2に記載の化合物に変更した。
それ以外は同様にして、有機EL素子1-2~1-20を各々作製した。 << Production of Organic EL Elements 1-2 to 1-20 >>
In the production of the organic EL device 1-1, the host compound and the dopant in the light emitting layer were changed to the compounds shown in Table 2.
Other than that, organic EL elements 1-2 to 1-20 were produced in the same manner.
有機EL素子1-1の作製において、発光層におけるホスト化合物及びドーパントを表2に記載の化合物に変更した。
それ以外は同様にして、有機EL素子1-2~1-20を各々作製した。 << Production of Organic EL Elements 1-2 to 1-20 >>
In the production of the organic EL device 1-1, the host compound and the dopant in the light emitting layer were changed to the compounds shown in Table 2.
Other than that, organic EL elements 1-2 to 1-20 were produced in the same manner.
《有機EL素子1-1~1-20の評価》
イリジウム錯体(ドーパント)の内部量子効率(%)の算出は、下記の方法に基づいて実施した。 << Evaluation of Organic EL Elements 1-1 to 1-20 >>
Calculation of the internal quantum efficiency (%) of the iridium complex (dopant) was performed based on the following method.
イリジウム錯体(ドーパント)の内部量子効率(%)の算出は、下記の方法に基づいて実施した。 << Evaluation of Organic EL Elements 1-1 to 1-20 >>
Calculation of the internal quantum efficiency (%) of the iridium complex (dopant) was performed based on the following method.
[内部量子効率(IQE)の算出]
具体的には、有機EL素子1-1を5Vで駆動した場合に、外部量子効率測定装置C9920-12(浜松ホトニクス株式会社製)を用いて積分球により、室温で外部取り出し効率(EQE)を測定した。
そして、有機EL素子1-1の発光層の層厚情報と光学定数を用いて、「解析ソフトSetfos(サイバネットシステム株式会社製)」にてモード解析を実施し、有機EL素子内部から素子外部に放出される光の割合、すなわち光取り出し効率(OC)を算出した。 [Calculation of internal quantum efficiency (IQE)]
Specifically, when the organic EL element 1-1 is driven at 5 V, the external extraction efficiency (EQE) is measured at room temperature with an integrating sphere using an external quantum efficiency measuring device C9920-12 (manufactured by Hamamatsu Photonics). It was measured.
Then, using the layer thickness information and the optical constant of the light emitting layer of the organic EL element 1-1, mode analysis is performed by “analysis software Setfos (manufactured by Cybernet System Co., Ltd.)”, from inside the organic EL element to outside the element. The ratio of emitted light, that is, the light extraction efficiency (OC) was calculated.
具体的には、有機EL素子1-1を5Vで駆動した場合に、外部量子効率測定装置C9920-12(浜松ホトニクス株式会社製)を用いて積分球により、室温で外部取り出し効率(EQE)を測定した。
そして、有機EL素子1-1の発光層の層厚情報と光学定数を用いて、「解析ソフトSetfos(サイバネットシステム株式会社製)」にてモード解析を実施し、有機EL素子内部から素子外部に放出される光の割合、すなわち光取り出し効率(OC)を算出した。 [Calculation of internal quantum efficiency (IQE)]
Specifically, when the organic EL element 1-1 is driven at 5 V, the external extraction efficiency (EQE) is measured at room temperature with an integrating sphere using an external quantum efficiency measuring device C9920-12 (manufactured by Hamamatsu Photonics). It was measured.
Then, using the layer thickness information and the optical constant of the light emitting layer of the organic EL element 1-1, mode analysis is performed by “analysis software Setfos (manufactured by Cybernet System Co., Ltd.)”, from inside the organic EL element to outside the element. The ratio of emitted light, that is, the light extraction efficiency (OC) was calculated.
外部量子効率(EQE)は内部量子効率(IQE)と光取り出し効率(OC)の積で表現できる(式(A)参照)。
式(A): EQE=IQE×OC
本発明では、測定及び解析によって得られたEQE及びOCを式(A)に適用し、有機EL素子1-1の発光材料の内部量子効率を算出した。有機EL素子1-2~1-20についても同様にして内部量子効率を算出した。表2には有機EL素子1-1の内部量子効率を100としたときの相対値を記載した。
表2により、本発明のイリジウム錯体を使用した有機EL素子は、比較例の有機EL素子よりも内部量子効率(発光効率)が高いことがわかった。 The external quantum efficiency (EQE) can be expressed by the product of the internal quantum efficiency (IQE) and the light extraction efficiency (OC) (see formula (A)).
Formula (A): EQE = IQE × OC
In the present invention, EQE and OC obtained by measurement and analysis are applied to the formula (A) to calculate the internal quantum efficiency of the light emitting material of the organic EL element 1-1. The internal quantum efficiency was calculated in the same manner for the organic EL elements 1-2 to 1-20. Table 2 shows relative values when the internal quantum efficiency of the organic EL element 1-1 is 100.
Table 2 shows that the organic EL element using the iridium complex of the present invention has higher internal quantum efficiency (luminous efficiency) than the organic EL element of the comparative example.
式(A): EQE=IQE×OC
本発明では、測定及び解析によって得られたEQE及びOCを式(A)に適用し、有機EL素子1-1の発光材料の内部量子効率を算出した。有機EL素子1-2~1-20についても同様にして内部量子効率を算出した。表2には有機EL素子1-1の内部量子効率を100としたときの相対値を記載した。
表2により、本発明のイリジウム錯体を使用した有機EL素子は、比較例の有機EL素子よりも内部量子効率(発光効率)が高いことがわかった。 The external quantum efficiency (EQE) can be expressed by the product of the internal quantum efficiency (IQE) and the light extraction efficiency (OC) (see formula (A)).
Formula (A): EQE = IQE × OC
In the present invention, EQE and OC obtained by measurement and analysis are applied to the formula (A) to calculate the internal quantum efficiency of the light emitting material of the organic EL element 1-1. The internal quantum efficiency was calculated in the same manner for the organic EL elements 1-2 to 1-20. Table 2 shows relative values when the internal quantum efficiency of the organic EL element 1-1 is 100.
Table 2 shows that the organic EL element using the iridium complex of the present invention has higher internal quantum efficiency (luminous efficiency) than the organic EL element of the comparative example.
[インピーダンス分光による有機EL素子の発光層の抵抗値の変化率の測定]
「薄膜の評価ハンドブック」テクノシステム社刊423~425ページに記載の測定方法を参考に、Solartron社製1260型インピーダンスアナライザ及び1296型誘電体インターフェイスを使って、作製した有機EL素子の発光層の抵抗値の測定を行った。 [Measurement of change rate of resistance value of light emitting layer of organic EL element by impedance spectroscopy]
Referring to the measurement method described in pages 423 to 425 of “Thin Film Evaluation Handbook” published by Techno System, the resistance of the light-emitting layer of the organic EL device fabricated using the Solartron 1260 impedance analyzer and 1296 dielectric interface The value was measured.
「薄膜の評価ハンドブック」テクノシステム社刊423~425ページに記載の測定方法を参考に、Solartron社製1260型インピーダンスアナライザ及び1296型誘電体インターフェイスを使って、作製した有機EL素子の発光層の抵抗値の測定を行った。 [Measurement of change rate of resistance value of light emitting layer of organic EL element by impedance spectroscopy]
Referring to the measurement method described in pages 423 to 425 of “Thin Film Evaluation Handbook” published by Techno System, the resistance of the light-emitting layer of the organic EL device fabricated using the Solartron 1260 impedance analyzer and 1296 dielectric interface The value was measured.
有機EL素子を室温(25℃)、2.5mA/cm2の定電流条件下により1000時間駆動した後の駆動前後の発光層の抵抗値を各々測定し、測定結果を下記に示した計算式により計算し抵抗値の変化率を求めた。表2には有機EL素子1-1の抵抗値の変化率を100としたときの相対比率を記載した。
駆動前後の抵抗値の変化率=|(駆動後の抵抗値/駆動前の抵抗値)-1|×100
値が0に近い方が駆動前後の変化率が小さいことを示す。
表2により、本発明のイリジウム錯体を使用した有機EL素子は、比較例の有機EL素子よりも発光層の抵抗値の変化率が小さく、発光寿命が優れていることがわかった。 The organic EL element was measured for the resistance value of the light emitting layer before and after driving for 1000 hours under room temperature (25 ° C.) and constant current conditions of 2.5 mA / cm 2 , and the calculation results are shown below. The change rate of the resistance value was obtained by calculation. Table 2 shows the relative ratio when the rate of change of the resistance value of the organic EL element 1-1 is 100.
Change rate of resistance value before and after driving = | (resistance value after driving / resistance value before driving) −1 | × 100
A value closer to 0 indicates a smaller rate of change before and after driving.
From Table 2, it was found that the organic EL device using the iridium complex of the present invention had a smaller change rate of the resistance value of the light emitting layer than the organic EL device of the comparative example, and had an excellent emission lifetime.
駆動前後の抵抗値の変化率=|(駆動後の抵抗値/駆動前の抵抗値)-1|×100
値が0に近い方が駆動前後の変化率が小さいことを示す。
表2により、本発明のイリジウム錯体を使用した有機EL素子は、比較例の有機EL素子よりも発光層の抵抗値の変化率が小さく、発光寿命が優れていることがわかった。 The organic EL element was measured for the resistance value of the light emitting layer before and after driving for 1000 hours under room temperature (25 ° C.) and constant current conditions of 2.5 mA / cm 2 , and the calculation results are shown below. The change rate of the resistance value was obtained by calculation. Table 2 shows the relative ratio when the rate of change of the resistance value of the organic EL element 1-1 is 100.
Change rate of resistance value before and after driving = | (resistance value after driving / resistance value before driving) −1 | × 100
A value closer to 0 indicates a smaller rate of change before and after driving.
From Table 2, it was found that the organic EL device using the iridium complex of the present invention had a smaller change rate of the resistance value of the light emitting layer than the organic EL device of the comparative example, and had an excellent emission lifetime.
本発明のイリジウム錯体は、有機EL素子の分野で好適に使用することができ、さらには、有機EL素子を備えた表示デバイス、ディスプレイや、家庭用照明、車内照明、時計や液晶用のバックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源、さらには表示装置を必要とする一般の家庭用電気器具等の広い発光光源として好適に利用できる。
The iridium complex of the present invention can be suitably used in the field of organic EL elements, and further, display devices, displays, home lighting, interior lighting, clocks and liquid crystal backlights equipped with organic EL elements. Wide light-emitting sources such as signboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light sources of optical sensors, and general household appliances that require display devices Can be suitably used.
1 ディスプレイ
3 画素
5 走査線
6 データ線
7 電源ライン
10 有機EL素子
11 スイッチングトランジスタ
12 駆動トランジスタ
13 コンデンサー
101 照明装置内の有機EL素子
102 ガラスカバー
105 陰極
106 有機EL層
107 透明電極付きガラス基板
108 窒素ガス
109 捕水剤
A 表示部
B 制御部
C 配線部
L 発光光 DESCRIPTION OF SYMBOLS 1Display 3 Pixel 5 Scan line 6 Data line 7 Power supply line 10 Organic EL element 11 Switching transistor 12 Drive transistor 13 Capacitor 101 Organic EL element 102 in an illuminating device Glass cover 105 Cathode 106 Organic EL layer 107 Glass substrate 108 with a transparent electrode Nitrogen Gas 109 Water capturing agent A Display part B Control part C Wiring part L Light emission
3 画素
5 走査線
6 データ線
7 電源ライン
10 有機EL素子
11 スイッチングトランジスタ
12 駆動トランジスタ
13 コンデンサー
101 照明装置内の有機EL素子
102 ガラスカバー
105 陰極
106 有機EL層
107 透明電極付きガラス基板
108 窒素ガス
109 捕水剤
A 表示部
B 制御部
C 配線部
L 発光光 DESCRIPTION OF SYMBOLS 1
Claims (14)
- 芳香族複素環を含む二座配位子を有するイリジウム錯体であって、
前記二座配位子が、前記芳香族複素環と他の芳香族複素環又は芳香族環が単結合により結合されている配位子であり、かつ当該配位子内に水素結合を有することを特徴とするイリジウム錯体。 An iridium complex having a bidentate ligand containing an aromatic heterocycle,
The bidentate ligand is a ligand in which the aromatic heterocycle and another aromatic heterocycle or aromatic ring are bonded by a single bond, and has a hydrogen bond in the ligand. An iridium complex characterized by - 前記水素結合を形成する水素原子の解離エネルギーが、390kJ/mol以下であることを特徴とする請求項1に記載のイリジウム錯体。 The iridium complex according to claim 1, wherein the dissociation energy of hydrogen atoms forming the hydrogen bond is 390 kJ / mol or less.
- 前記水素結合を形成する水素原子と水素結合している原子が、窒素原子、酸素原子、リン原子又はケイ素原子であることを特徴とする請求項1又は請求項2に記載のイリジウム錯体。 The iridium complex according to claim 1 or 2, wherein an atom hydrogen-bonded with the hydrogen atom forming the hydrogen bond is a nitrogen atom, an oxygen atom, a phosphorus atom or a silicon atom.
- 前記イリジウム錯体が、下記一般式(1)で表される部分構造を有することを特徴とする請求項1から請求項3までのいずれか一項に記載のイリジウム錯体。
- 前記イリジウム錯体におけるX1~X5で形成される環が、イミダゾール環又はトリアゾール環であることを特徴とする請求項3に記載のイリジウム錯体。 The iridium complex according to claim 3, wherein the ring formed by X 1 to X 5 in the iridium complex is an imidazole ring or a triazole ring.
- 前記イリジウム錯体におけるA1が、ベンゼン環であることを特徴とする請求項4又は請求項5に記載のイリジウム錯体。 The iridium complex according to claim 4 or 5, wherein A 1 in the iridium complex is a benzene ring.
- 前記イリジウム錯体が、下記一般式(2)で表される部分構造を有することを特徴とする請求項1から請求項3までのいずれか一項に記載のイリジウム錯体。
- 前記イリジウム錯体が、下記一般式(3)で表される部分構造を有することを特徴とする請求項1から請求項3までのいずれか一項に記載のイリジウム錯体。
- 前記イリジウム錯体が、下記一般式(4)で表される部分構造を有することを特徴とする請求項1から請求項3までのいずれか一項に記載のイリジウム錯体。
- 前記イリジウム錯体が、下記一般式(5)で表される部分構造を有することを特徴とする請求項1から請求項3までのいずれか一項に記載のイリジウム錯体。
- 請求項1から請求項10までのいずれか一項に記載のイリジウム錯体を含有することを特徴とする有機エレクトロルミネッセンス材料。 An organic electroluminescent material comprising the iridium complex according to any one of claims 1 to 10.
- 陽極と陰極の間に、少なくとも発光層を有する有機エレクトロルミネッセンス素子であって、
当該発光層が、請求項11に記載の有機エレクトロルミネッセンス材料を含有することを特徴とする有機エレクトロルミネッセンス素子。 An organic electroluminescence device having at least a light emitting layer between an anode and a cathode,
The said light emitting layer contains the organic electroluminescent material of Claim 11, The organic electroluminescent element characterized by the above-mentioned. - 請求項12に記載の有機エレクトロルミネッセンス素子が具備されていることを特徴とする表示装置。 A display device comprising the organic electroluminescence element according to claim 12.
- 請求項12に記載の有機エレクトロルミネッセンス素子が具備されていることを特徴とする照明装置。 An illuminating device comprising the organic electroluminescence element according to claim 12.
Priority Applications (1)
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US10720587B2 (en) | 2016-07-19 | 2020-07-21 | Universal Display Corporation | Organic electroluminescent materials and devices |
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US11912724B2 (en) | 2021-02-05 | 2024-02-27 | Samsung Electronics Co., Ltd. | Organometallic compound, organic light-emitting device including the same, and electronic apparatus including the organic light-emitting device |
US12004416B2 (en) | 2020-08-31 | 2024-06-04 | Samsung Electronics Co., Ltd. | Organometallic compound and organic light-emitting device including the same |
US12049473B2 (en) | 2019-12-13 | 2024-07-30 | Samsung Electronics Co., Ltd. | Organometallic compound, organic light-emitting device including the same and diagnostic composition including the organometallic compound |
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JP6686891B2 (en) | 2020-04-22 |
JPWO2016056562A1 (en) | 2017-07-27 |
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