WO2015132852A1

WO2015132852A1 - Adhesive tape for semiconductor processing

Info

Publication number: WO2015132852A1
Application number: PCT/JP2014/055269
Authority: WO
Inventors: 有理玉川; 郷史大田; 朗矢吹; 服部　聡
Original assignee: 古河電気工業株式会社
Priority date: 2014-03-03
Filing date: 2014-03-03
Publication date: 2015-09-11
Also published as: TW201441332A; KR20160046884A; KR101886939B1; CN105684131A; CN105684131B; TWI553087B

Abstract

Provided is an adhesive tape for semiconductor processing, which does not contaminate a semiconductor element with a dissolved adhesive in cases where a cleaning liquid for cleaning the residue of a bonding agent that is used for bonding a support member to a semiconductor wafer is poured on the adhesive during the production process for the semiconductor element using the support member, and which has strong adhesion required during the physical/mechanical separation of the support member. An adhesive tape for semiconductor processing according to the present invention is obtained by forming a radiation curable adhesive layer on at least one surface of a base resin film, and is characterized in that: the gel fraction of the adhesive layer before irradiation of ultraviolet light is from 65% to 100% (inclusive); and the peak value of the adhesive layer before irradiation of ultraviolet light in a probe tack test is 100-600 kPa.

Description

Adhesive tape for semiconductor processing

The present invention relates to an adhesive tape for semiconductor processing used for dicing a semiconductor wafer in a process of manufacturing a semiconductor device. More specifically, the present invention relates to a semiconductor processing adhesive tape used for manufacturing a semiconductor element using a support member.

In thin processing the back surface of the semiconductor wafer on which the wiring pattern is formed, in order to protect the pattern surface of the semiconductor wafer and fix the semiconductor wafer itself, after attaching a protective sheet on the pattern surface, polishing on the back surface, It is common to perform thin processing such as grinding. As such a protective sheet, a sheet obtained by applying an acrylic adhesive or the like on a base material made of a plastic film is generally used. However, in recent years, with the thinning and miniaturization of IC cards and mobile phones, the thickness of the semiconductor chip has been required to be 50 μm or less. In the process using the conventional protective tape, the semiconductor wafer is formed only with the protective tape. The wafer cannot be supported, and the semiconductor wafer is warped after grinding, or is bent when stored in a wafer cassette, making it difficult to handle the semiconductor wafer and making handling and conveyance automated.

In order to solve this problem, a method has been proposed in which a glass substrate, a ceramic substrate, a silicon wafer substrate, or the like is bonded to a semiconductor wafer via an adhesive to provide support to the semiconductor wafer (see, for example, Patent Document 1). . Thus, by using a support member such as a glass substrate, a ceramic substrate, or a silicon wafer substrate instead of the protective sheet, the handling property of the semiconductor wafer is greatly improved, and the conveyance can be automated.

When a semiconductor wafer is handled using a support member, a process of peeling the support member from the semiconductor wafer is necessary after the backside grinding of the semiconductor wafer. The support member is peeled by (1) dissolving or decomposing the adhesive between the support member and the semiconductor wafer with chemicals, and (2) irradiating the adhesive between the support member and the semiconductor wafer with laser light. In general, it is carried out by a method such as photolysis. However, the method (1) requires a long time for diffusing chemicals in the adhesive, and the method (2) requires a long time for laser scanning. There was a problem. In addition, each method has a problem that it is necessary to prepare a special substrate as a support member.

For this reason, a method of physically and mechanically peeling the support member after forming a peeling hook has been proposed (see, for example, Patent Documents 2 and 3). This method eliminates the need for long-time treatments required for conventional dissolution or decomposition of adhesives by chemicals or photodecomposition by laser scanning, and enables processing in a short time. After the support member is peeled from the semiconductor wafer, the adhesive residue on the semiconductor wafer generated when the support member is peeled is then washed with a chemical.

The semiconductor wafer whose back surface has been ground is then transferred to a dicing process and cut into individual chips. As described above, when the thickness of the semiconductor chip is 50 μm or less, the semiconductor wafer alone is the one after grinding. Since the semiconductor wafer becomes extremely difficult to handle due to warpage of the semiconductor wafer and bending when stored in the wafer cassette, the ground surface of the semiconductor wafer immediately before the back surface grinding of the semiconductor wafer prior to peeling of the support member. In general, a dicing tape is bonded to the ring frame and supported and fixed to the ring frame. Therefore, the cleaning of the adhesive residue on the semiconductor wafer caused by the peeling of the support member with the chemical is performed in a state where the semiconductor wafer is adhered to the dicing tape, and the dicing tape has high solvent resistance. Desired.

As a dicing tape having high solvent resistance, it has been proposed that the pressure-sensitive adhesive layer contains an energy ray-curable acrylic resin composition and has a gel fraction of 70% or more (see, for example, Patent Document 4). .

JP 2006-135272 A Special table 2011-510518 gazette US Patent Application Publication No. 2011/0272092 JP 2009-224621 A

However, the pressure-sensitive adhesive tape for semiconductor processing described in Patent Document 4 has strong adhesiveness required for physical and mechanical peeling of the support member as described in Patent Documents 2 and 3 described above. However, when the support member is peeled from the semiconductor wafer, there is a problem that the semiconductor wafer is peeled off from the semiconductor processing adhesive tape.

Therefore, the present invention provides a pressure-sensitive adhesive even when a cleaning liquid for cleaning the adhesive residue that has bonded the support member to the semiconductor wafer is applied to the pressure-sensitive adhesive in the manufacturing process of the semiconductor element using the support member. An object of the present invention is to provide a pressure-sensitive adhesive tape for semiconductor processing that does not dissolve and contaminate a semiconductor element, and has strong adhesiveness required for physical and mechanical peeling of a support member. To do.

As a result of intensive studies to achieve the above object, the inventors of the present invention are pressure-sensitive adhesive tapes for semiconductor processing having a pressure-sensitive adhesive layer on a base resin film, the gel fraction of which is specified. By setting the probe tack to a specific value, the adhesive dissolves even when the adhesive is washed with cleaning liquid in the semiconductor device manufacturing process, including the physical and mechanical peeling process of the support member. Thus, it has been found that the semiconductor element is not contaminated and can have strong adhesiveness required for physical and mechanical peeling of the support member. The present invention has been made based on this finding.

That is, the semiconductor processing pressure-sensitive adhesive tape according to the present invention is a pressure-sensitive adhesive tape for semiconductor processing in which a radiation-curable pressure-sensitive adhesive layer is formed on at least one surface of a base resin film, and before the pressure-sensitive adhesive layer is irradiated with ultraviolet rays. The gel fraction is 65% or more and 100% or less, and the peak value of the probe tack test before UV irradiation of the pressure-sensitive adhesive layer is 200 to 600 kPa.

In the semiconductor processing pressure-sensitive adhesive tape, the pressure-sensitive adhesive layer contains at least an acrylic polymer having a radiation-curable carbon-carbon double bond in the molecule, a photopolymerization initiator, and polypropylene oxide. It is preferable that polypropylene oxide is contained in an amount of 0.1% by mass or more and 2.0% by mass or less based on the total solid content of the pressure-sensitive adhesive layer.

Further, in the above adhesive tape for semiconductor processing, the polypropylene oxide preferably has a number average molecular weight of more than 3000 and 10,000 or less.

The semiconductor processing pressure-sensitive adhesive tape preferably has a parallel light transmittance of light having a wavelength of 1064 nm incident from the base resin film side of 88% or more and less than 100%.

The semiconductor processing adhesive tape preferably has a surface roughness Ra on the side opposite to the adhesive layer of the base resin film of 0.1 μm or more and 0.3 μm or less. The surface roughness Ra is more preferably 0.12 μm or more and 0.19 μm or less.

According to the present invention, in the manufacturing process of the semiconductor element using the support member, even when the cleaning liquid for cleaning the adhesive residue that has bonded the support member to the semiconductor wafer is applied to the adhesive, Does not dissolve and contaminate the semiconductor element, and can have strong adhesion required for physical and mechanical peeling of the support member.

Hereinafter, embodiments of the present invention will be described in detail.

In the adhesive tape for semiconductor processing according to the embodiment of the present invention, at least one adhesive layer is formed on at least one side of the base resin film.

In the adhesive tape for semiconductor processing according to the embodiment of the present invention, the gel fraction of the adhesive layer is 65% or more, preferably 70% or more, more preferably 80% or more. The gel fraction is the gel fraction with respect to chemicals for dissolving or decomposing the adhesive used to bond the support member to the semiconductor wafer during backside grinding of the semiconductor wafer, preferably the gel fraction with respect to methyl isobutyl ketone. Rate. If the gel fraction is too small, the chemical resistance of the pressure-sensitive adhesive layer is low, and the above chemicals are used in the manufacturing process of semiconductor elements in which the adhesive tape for semiconductor processing may be exposed to chemicals such as methyl isobutyl ketone and its derivatives. As a result, the melted adhesive will contaminate the semiconductor chip.

In the present invention, the gel fraction means the ratio of the crosslinked pressure-sensitive adhesive component excluding the cross-linked component in the pressure-sensitive adhesive layer. The method described below was used for calculation of the gel fraction. In the present invention, the gel fraction is a state where the pressure-sensitive adhesive layer surface is protected by a separator or the like immediately after the pressure-sensitive adhesive layer is formed, and is measured for the pressure-sensitive adhesive layer before irradiation with energy rays.

(Calculation of gel fraction)
The separator was removed from the semiconductor processing adhesive tape cut to a size of 50 mm × 50 mm, and its mass A was weighed. Next, this weighed sample of the adhesive tape for semiconductor processing was allowed to stand for 48 hours in a state immersed in, for example, 100 g of methyl isobutyl ketone (MIBK), and then dried in a constant temperature layer at 50 ° C., and its mass B was weighed. Further, the pressure-sensitive adhesive layer of the sample was wiped off using 100 g of ethyl acetate, and then the mass C of the sample was weighed, and the gel fraction was calculated by the following formula (1).
Gel fraction (%) = (BC) / (AC) (1)

Also, the peak value of the probe tack test before the irradiation of the adhesive layer is 200 to 600 kPa. When the peak value of the probe tack test is too small, the adhesiveness of the pressure-sensitive adhesive layer to the adherend is insufficient, and it becomes difficult to peel off the support member. If the peak value of the probe tack test is too large, adhesive residue and chipping are likely to occur. The method described below is used for the probe tack measurement.

(Measurement of probe tack)
The probe tack is measured by using, for example, a tacking tester TAC-II manufactured by Resuka Co., Ltd. In the measurement mode, Constant Load is used in which the probe is pushed down to the set pressurization value and controlled to hold the pressurization value until the set time elapses. After peeling the separator, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is turned up, and a probe made of SUS304 having a diameter of 3.0 mm is brought into contact with the upper side. The speed at which the probe is brought into contact with the measurement sample is 30 mm / min, the contact load is 0.98 N, and the contact time is 1 second. Thereafter, the probe is peeled upward at a peeling speed of 600 mm / min, and the force required for peeling is measured. The probe temperature is 23 ° C., and the plate temperature is 23 ° C.

Hereinafter, each component of the adhesive tape for semiconductor processing of this embodiment will be described in detail.

(Base resin film)
As the base resin film, when UV is used as radiation for curing the pressure-sensitive adhesive layer, the base resin film needs to be light transmissive. Further, in the case where it is necessary to make a laser incident through the adhesive tape for semiconductor processing, it is necessary to be light transmissive as well. In order for the laser to enter through the adhesive tape for semiconductor processing, the parallel light transmittance of the adhesive tape for semiconductor processing needs to be 88% or more and less than 100%, but the diffused light is reduced by applying the adhesive layer. Therefore, it is not necessary to consider diffused light with the base resin film alone, and the parallel light transmittance of the base resin film is not necessarily 88% or more and less than 100%.
On the other hand, when it is not necessary to form a modified region on a semiconductor wafer by using an electron beam as radiation and making a laser incident through an adhesive tape for semiconductor processing, the base resin film is not necessarily transparent. There is no need.

Materials constituting the base resin film include polyolefins such as polyethylene, polypropylene, ethylene-propylene copolymer, and polybutene, ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer, and ethylene- (Meth) acrylic acid ester copolymer such as ethylene copolymer, polyethylene terephthalate, polybutylene terephthalate, polycarbonate, polymethyl methacrylate engineering plastics, soft polyvinyl chloride, semi-rigid polyvinyl chloride, polyester, polyurethane, Polymer materials such as polyamide, polyimide natural rubber and synthetic rubber are preferred. Moreover, what mixed 2 or more types chosen from these groups, or what was multilayered may be sufficient, and it can select arbitrarily by adhesiveness with an adhesive layer. More preferably, the base resin film is a film using an ionomer of an ethylene-acrylic acid copolymer.

The thickness of the base resin film is not particularly limited, but is preferably 10 to 500 μm, more preferably 40 to 400 μm, and particularly preferably 70 to 250 μm.

The surface roughness (arithmetic mean roughness Ra) of the surface opposite to the surface that the adhesive layer of the base resin film contacts is not particularly limited, but it is necessary to make the laser incident through the adhesive tape for semiconductor processing. In this case, the thickness is preferably 0.1 to 0.3 μm, more preferably 0.12 to 0.19 μm. When it is necessary to make a laser incident through an adhesive tape for semiconductor processing, the surface roughness (arithmetic average roughness Ra) of the surface of the base resin film opposite to the surface in contact with the adhesive layer is 0. When the diameter is larger than 3 μm, a method called stealth dicing (with a dicing tape attached to the back surface of the semiconductor wafer, a laser beam having transparency to the dicing tape is used, and a condensing point is formed inside the semiconductor wafer. At the same time, it is made incident from the back surface of the semiconductor wafer via a dicing tape, and a modified region is formed inside the semiconductor wafer along the planned cutting line of the semiconductor wafer by multiphoton absorption, and the planned cutting line starts from this modified region. In the method of cutting the semiconductor wafer by dividing the semiconductor wafer along the The surface where wear agent layer is in contact is diffused by the surface of the surface on the opposite side can not be efficiently forming a modified region by multiphoton absorption within the semiconductor wafer. On the other hand, when the surface roughness (arithmetic average roughness Ra) of the surface opposite to the surface with which the adhesive layer of the base resin film contacts is smaller than 0.1 μm, the surface with which the adhesive layer of the base resin film contacts The slipping property of the opposite surface becomes low, and it is difficult to uniformly extend the chip interval when the interval between the divided chips is expanded by the expanding process. The surface roughness of the surface of the base resin film opposite to the surface that is in contact with the pressure-sensitive adhesive layer is the solution casting method by adjusting the surface roughness of the cooling roll during film extrusion in the case of the T-die method or calendar method. In this case, it can be controlled by adjusting the surface roughness of the drum or belt. It can also be controlled by coating various resins on a film having an arbitrary surface roughness.

The surface of the base resin film that contacts the pressure-sensitive adhesive layer may be subjected to corona treatment or treatment with a primer or the like in order to improve adhesion.

(Adhesive layer)
The pressure-sensitive adhesive layer is an energy ray-curable acrylic resin composition of an acrylic pressure-sensitive adhesive mainly comprising an acrylic compound having an unsaturated double bond in the molecule and a photopolymerization initiator and a curing agent as subcomponents. It is formed using.

Examples of the acrylic compound having an unsaturated double bond in the molecule include pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2 -Ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, methoxyethyl acrylate, ethoxyethyl acrylate or similar methacrylates, or functional groups such as acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, hydroxy Alkyl acrylates, hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N-methylolacrylamide N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl acrylate , Glycidyl methacrylate, allyl glycidyl ether, vinyl acetate, styrene, acrylonitrile, vinyl alcohol, one or more polymers, or a mixture of several polymers (hereinafter referred to as “(compound 1)”) And a photopolymerizable carbon-carbon double bond introduced.

Here, in order to increase the gel fraction of the pressure-sensitive adhesive layer, as proposed in Patent Document 4, a high-molecular weight acrylic resin composition is selected, and these are crosslinked by a crosslinking agent. When this is used, the adhesiveness of the tape for semiconductor processing tends to be lowered, and the strong adhesiveness required when the support member is physically and mechanically peeled is impaired.

Thus, the acrylic compound having a functional group that is copolymerized with (Compound 1) is not particularly limited, but the acrylic compound and the curing agent are used in forming a crosslinked structure obtained by reacting with a crosslinking agent described later. The acrylic compound having a functional group preferably has a large molecular weight in order to achieve both an increase in the molecular weight of the acrylic pressure-sensitive adhesive (that is, an increase in the number of crosslinking points) and a flexibility (tack force) of the pressure-sensitive adhesive. Is preferably 100 or more, and more preferably 115 or more. For example, when hydroxyalkyl acrylates are used as an acrylic compound having a functional group, 2-hydroxypropyl acrylate (molecular weight 130), 4-hydroxybutyl acrylate (molecular weight 144), 2-hydroxyethyl acrylate (molecular weight 116), 1 1,4-cyclohexanedimethanol monoacrylate (molecular weight 198) is preferred. When hydroxyalkyl acrylamides are used as the acrylic compound having a functional group, N- (2-hydroxyethyl) acrylamide (molecular weight 115), N- (2- Hydroxypropyl) acrylamide (molecular weight 129) is preferred. By using a monomer having a large molecular weight as the acrylic compound having a functional group, the molecular movement at the crosslinking point is facilitated, and the pressure-sensitive adhesive layer can be made flexible.

As a method for introducing a photopolymerizable carbon-carbon double bond into (Compound 1), there is a functional group in the side chain of (Compound 1), a functional group capable of addition reaction with this, and a photopolymerizable carbon- The method of adding the compound which has a carbon double bond to (compound 1) is mentioned. As the compound having a functional group capable of addition reaction with (Compound 1) and a photopolymerizable carbon-carbon double bond, when the side chain to be subjected to the addition reaction is a carboxyl group or an acid anhydride, glycidyl ( When (meth) acrylate etc. are mentioned and the side chain which is the object of addition reaction is an epoxy group, (meth) acrylic acid etc. are mentioned, and when the side chain which is the object of addition reaction is a hydroxyl group 2, monoisocyanate alkyl (meth) acrylate and the like.

The acrylic compound having an unsaturated double bond in the molecule preferably has a weight average molecular weight of 100,000 to 2,000,000, more preferably a weight average molecular weight of 300,000 to 1500,000, from the viewpoint of chemical resistance. When the weight average molecular weight is 100,000 or less, the chemical resistance of the resin is low, and thus the adhesive layer is dissolved by the cleaning liquid used when removing the support member, and the semiconductor substrate may be contaminated. On the other hand, a high molecular weight material having a weight average molecular weight of 1,000,000 or more has a very high viscosity, and thus it is difficult to produce it in a state suitable for use as an adhesive.

The photopolymerization initiator that can be used in the present invention is not particularly limited, and any conventionally known photopolymerization initiator can be used. For example, benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone, 4,4′-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethylanthraquinone, t- And anthraquinones such as butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triarylimidazole dimer (rophine dimer), acridine compounds, and the like. Can be used alone or in combination of two or more.

The addition amount of the photopolymerization initiator is preferably 0.1 to 15 parts by mass with respect to 100 parts by mass of the acrylic compound into which the photopolymerizable carbon-carbon double bond has been introduced. It is more preferable to set it as a mass part.

The curing agent is a compound selected from polyisocyanates, melamine / formaldehyde resins, and epoxy resins, and can be used alone or in combination of two or more. The cross-linked structure resulting from the reaction with the acrylic compound can increase the molecular weight of the acrylic pressure-sensitive adhesive including the acrylic compound and the curing agent, and improve the solvent resistance after the pressure-sensitive adhesive is applied.

The polyisocyanates are not particularly limited, and examples thereof include 4,4′-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4′-diphenyl ether diisocyanate, 4,4 ′-[2,2-bis (4 -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate , Lysine diisocyanate, lysine triisocyanate and the like. Specifically, Coronate L (manufactured by Nippon Polyurethane Industry Co., Ltd.) etc. can be used as a commercial product. Can.

As the melamine / formaldehyde resin, specifically, Nikalac MX-45 (manufactured by Sanwa Chemical Co., Ltd.), Melan (manufactured by Hitachi Chemical Co., Ltd.), etc. can be used as commercially available products.

In the present invention, it is particularly preferable to use polyisocyanates.

Although it does not restrict | limit especially as a kind of crosslinking agent, As mentioned above, the molecular weight of the acrylic adhesive containing an acrylic compound and a hardening | curing agent is formed in the crosslinked structure formation obtained by making it react with the functional group of (Compound 1). In order to achieve both increase (that is, increase in the number of crosslinking points) and flexibility (tack force) of the same adhesive, those having a large molecular weight per functional group are preferred, and the molecular weight per functional group of the cross-linking agent is preferably It is desirable that it is 150 or more, more preferably 200 or more. For example, when polyisocyanates are used as the crosslinking agent, those having a large molecular weight per isocyanate group are preferred. The allophanate type and adduct type are preferred to the biuret type and isocyanurate type. If the acrylic compound and the acrylic pressure-sensitive adhesive containing the curing agent have the same number of cross-linking points, that is, if the molecular weight after formation of the crosslinked structure of the acrylic pressure-sensitive adhesive containing the acrylic compound and the curing agent is substantially equal, the acrylic compound And acrylic adhesives containing curing agents have the same solvent resistance. At this time, the use of one having a large molecular weight per isocyanate group facilitates the molecular movement at the cross-linking point. The acrylic pressure-sensitive adhesive containing the compound and the curing agent becomes more flexible and can increase the tack force.

The addition amount of the curing agent is not particularly limited, but is preferably 0.1 to 15 parts by mass with respect to 100 parts by mass of the acrylic compound having an unsaturated double bond in the molecule. More preferably, it is 10 parts by mass. If the amount is less than 0.1 parts by mass, the effect of improving the cohesive force tends to be insufficient. If the amount exceeds 15 parts by mass, the curing reaction proceeds rapidly during the blending and application of the adhesive to form a crosslinked structure. Therefore, workability may be impaired.

In addition, the ratio of the acrylic compound having an unsaturated double bond in the molecule and the crosslinking agent capable of reacting with the acrylic compound to the total solid content of the pressure-sensitive adhesive layer is preferably 85% by mass or more.

In addition, the semiconductor processing pressure-sensitive adhesive tape is bonded to the ground surface of the semiconductor wafer immediately after the back surface grinding of the semiconductor wafer and prior to peeling of the support member. When bonded to the wafer surface immediately before the back surface grinding and before the oxide film formation, there is a problem that subsequent peeling becomes difficult. Therefore, it is preferable to add polypropylene oxide in order to facilitate subsequent peeling even when bonded to the wafer surface immediately after the back surface grinding and before forming the oxide film.

The polypropylene oxide is not particularly limited and can be appropriately selected from conventional polypropylene oxide. The number average molecular weight of polypropylene oxide is preferably more than 3000 and 10,000 or less, and more preferably 4000 to 10,000. If the number average molecular weight of the polypropylene oxide is too large, the affinity between the polypropylene oxide and the acrylic polymer (X) is poor, and the adherend is contaminated. If the number average molecular weight of the polypropylene oxide is too small, the water resistance of the pressure-sensitive adhesive layer becomes insufficient, the pressure-sensitive adhesive layer swells with cutting water, and a dicing line meanders.

From the viewpoint of contamination of the adherend, polyoxypropylene-glyceryl ether having a number average molecular weight of more than 3000 and not more than 10,000, and more preferably 4000 to 10,000 is preferable. By using a polyoxypropylene-glyceryl ether having a number average molecular weight within this range, the number of hydroxyl groups in the polypropylene oxide molecule increases from 2 to 3, so that the polypropylene oxide is crosslinked in the crosslinked structure by reaction with a crosslinking agent such as polyisocyanate. The probability of being taken in is increased, and the polypropylene oxide moves to the adherend interface, thereby reducing the contamination of the adherend surface.

Polypropylene oxide having a number average molecular weight of more than 3000 and not more than 10,000 includes Uniol D-4000 (number average molecular weight 4000) (trade name, manufactured by NOF Corporation), Preminol S4007 (number average molecular weight 5000) (( Trade name), manufactured by Asahi Glass Co., Ltd., Preminol S4011 (number average molecular weight 10,000) ((trade name), manufactured by Asahi Glass Co., Ltd.), and the like. As polyoxypropylene-glyceryl ether having a number average molecular weight of more than 3000 and not more than 10,000, Uniol TG-4000 (number average molecular weight 4000) ((trade name), manufactured by NOF Corporation)), Preminol S3006 (number average) Molecular weight 5000) ((trade name), manufactured by Asahi Glass Co., Ltd.), Preminol S3011 (number average molecular weight 10000) ((trade name), manufactured by Asahi Glass Co., Ltd.) and the like are exemplified, but not limited thereto.

The blending amount of polypropylene oxide having a number average molecular weight of more than 3000 and 10,000 or less is 100 parts by mass of the acrylic polymer (X) and / or acrylic polymer (Y) having a radiation-curable carbon-carbon double bond in the molecule. On the other hand, it can be appropriately selected from the range of 0.1 to 3.0 parts by mass, preferably 0.5 to 2.0 parts by mass. If the blending amount of polypropylene oxide is too small, the dicing adhesive tape or sheet is bonded to the unstable wafer grinding surface where the natural oxide film is not formed on the entire surface, making it thinner than the large-diameter semiconductor wafer. The semiconductor chip cannot be picked up efficiently. When the blending amount of polypropylene oxide is too large, the adhesiveness before radiation curing becomes insufficient, the end of the chip is peeled off during dicing, and cutting dust adheres to the back surface of the chip.

In the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, if necessary, for example, a tackifier, an anti-aging agent, a filler, a colorant, a flame retardant, an antistatic agent, a softener, an ultraviolet absorber. In addition, known additives such as antioxidants, plasticizers, and surfactants may be included.

Furthermore, the acrylic resin composition forming the pressure-sensitive adhesive layer used in the present invention includes an ultraviolet curable monomer, an ultraviolet curable oligomer, a tackifier, a tackifier, a surfactant, and the like as necessary. A modifier can be blended, but the addition of these materials reduces the gel fraction of the adhesive and may impair the chemical resistance, so an acrylic compound having an unsaturated double bond in the molecule It is preferable to set it as 20 mass parts or less with respect to 100 mass parts, More preferably, it is 10 mass parts or less, More preferably, it is more preferable to set it as 5 mass parts or less.

The thickness of the pressure-sensitive adhesive layer is preferably 5 μm or more and 70 μm or less, more preferably 8 μm or more and 50 μm or less, and further preferably 10 μm or more and 30 μm or less. If the pressure-sensitive adhesive layer is too thin, it will not be able to follow the unevenness of the electrode, causing the problem that cutting water and cutting waste will enter during dicing, and conversely if it is too thick, chipping will increase during dicing. The quality of the element deteriorates.

In the present invention, the energy beam for curing the pressure-sensitive adhesive layer is preferably radiation, and examples of the radiation include light rays such as ultraviolet rays (UV), electron beams, and the like.
In the present invention, the pressure-sensitive adhesive layer preferably contains all of the following compounds (a) to (c).
(A) An acrylic compound having an unsaturated double bond consisting of the following compounds (a1) to (a3) and having a weight average molecular weight of 100,000 to 2,000,000 (a1) pentyl acrylate, n-butyl acrylate , Isobutyl acrylate, ethyl acrylate, methyl acrylate, hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, methoxyethyl acrylate, ethoxyethyl acrylate or similar methacrylates, acrylic acid, Methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, hydroxyalkyl acrylates, hydroxyalkyl methacrylates, glycol monoa Chlorates, glycol monomethacrylates, N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, anhydrous One or more polymers selected from itaconic acid, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, vinyl acetate, styrene, acrylonitrile, vinyl alcohol, or several polymers (A2) The acrylic compound having a functional group copolymerized with the compound (a1) may be hydroxyalkyl acrylates or hydroxyalkyl acrylamides. (A3) As a compound having a functional group capable of addition reaction with the compound (a1) and a photopolymerizable carbon-carbon double bond, the side chain subject to the addition reaction is a carboxyl group Alternatively, when it is an acid anhydride, glycidyl (meth) acrylate, and when the side chain targeted for the addition reaction is an epoxy group, (meth) acrylic acid, the side chain targeted for the addition reaction is a hydroxyl group. In some cases, the diisocyanate alkyl (meth) acrylate (b) photopolymerization initiator (c) 0.1 to 15 parts by mass of polyisocyanates with respect to 100 parts by mass of the compound (a)

The method for forming the pressure-sensitive adhesive layer on the base resin film is not particularly limited. For example, the above-mentioned acrylic resin composition can be formed by applying and drying the base resin film on a base resin film by a commonly used coating method. It can produce by sticking the adhesive layer apply | coated on the base resin film and transferring to a base resin film.

Further, if necessary, a synthetic resin film that is usually used as a separator for protecting the pressure-sensitive adhesive layer may be attached to the pressure-sensitive adhesive layer side until it is put to practical use. Examples of the constituent material of the synthetic resin film include synthetic resin films such as polyethylene, polypropylene, and polyethylene terephthalate, and paper. The surface of the synthetic resin film may be subjected to release treatment such as silicone treatment, long-chain alkyl treatment, fluorine treatment, etc., as necessary, in order to enhance the peelability from the pressure-sensitive adhesive layer 3. The thickness of the synthetic resin film is usually about 10 to 100 μm, preferably about 25 to 50 μm.

In addition, for the semiconductor processing adhesive tape according to the embodiment of the present invention, when it is necessary to make the laser light incident through the semiconductor processing adhesive tape, for example, when it is used in the above-described method called stealth dicing The parallel light transmittance of light having a wavelength of 1064 nm incident from the base resin film side is 88% or more and less than 100%, which prevents the laser light from being attenuated or diffused before reaching the semiconductor wafer. From the viewpoint of suitably forming the modified layer inside the semiconductor wafer. Of course, when it is not necessary to make a laser beam incident through the adhesive tape for semiconductor processing, there is no particular limitation on the parallel light transmittance of a light beam having a wavelength of 1064 nm.

Next, the support member will be described.

(Support material)
The support member is made of a material selected from the group consisting of silicon, sapphire, crystal, metal (eg, aluminum, copper, steel), various glasses and ceramics. The surface of the support member to which the adhesive is applied can also include other deposited materials. For example, it is possible to deposit silicon nitride on a silicon wafer, thereby changing the bonding characteristics.

(Paste of support member)
When affixing the support member, an adhesive solution of an adhesive described later is applied to the circuit forming surface of the semiconductor wafer, and then the applied adhesive is dried in an oven or a hot plate. Moreover, in order to obtain the required thickness of the adhesive (adhesive layer), the application of the adhesive liquid and the preliminary drying may be repeated a plurality of times.

Further, in applying the adhesive liquid of the adhesive to the circuit forming surface of the semiconductor wafer, before applying the adhesive liquid of the adhesive, as shown in JP-A-2009-528688, By depositing the plasma polymer separation layer on the circuit surface, the support member may be separated between the circuit formation surface of the semiconductor wafer and the plasma polymer separation layer.

Also, when the adhesive liquid is applied to the circuit forming surface of the semiconductor wafer with a spin coater, a bead portion that is raised one step at the periphery may be formed. In this case, it is preferable to remove the bead portion with a solvent before the adhesive liquid is pre-dried.

(adhesive)
As the adhesive, a commercially available adhesive can be used in the present invention. For example, WaferBONDTM material (WaferBONDTM HT 10.10 for slide bonding process, WaferBONDTM CR200 for chemical bonding process) sold by Brewer Sciences (Roller, Missouri), ELASTOSIL LR 3070, a material manufactured by WACKER, etc. Is mentioned.

Also preferred are resins or polymers that exhibit high adhesion to semiconductor materials, glass or metals, and particularly preferred are, for example, (a) UV curable resins such as reactive epoxies and acrylics at high solids, (B) Thermosetting resins of the same family such as two-part epoxy or silicone adhesives, (c) Thermoplastic acrylic resins, styrene resins, vinyl halide (fluorine-free) resins or vinyl ester polymers And the copolymers are coated with polyamides, polyimides, polysulfones, polyethersulfones, or polyurethanes in a molten state or as a solution coating, and dried by baking after coating to form the support member and the semiconductor wafer. Further, (d) cyclic olefins and polyolefin rubbers (for example, polyisobutylene) Or (e) tackifying resins which is based on hydrocarbons.

As the adhesive, water is used at the time of polishing, so a water-insoluble polymer compound is preferable, and a high softening point is desirable. As such a high molecular compound, a novolac resin, an epoxy resin, an amide resin, a silicon resin, an acrylic resin, a urethane resin, polystyrene, polyvinyl ether, polyvinyl acetate, a modified product thereof, or a mixture thereof is dissolved in a solvent. Can be mentioned. Among them, the acrylic resin material is preferable because it has a heat resistance of 200 ° C. or higher, generates less gas, and hardly generates cracks. In addition, novolak resin has no scum and is inferior to acrylic resin material in terms of heat resistance, amount of generated gas, and generation of cracks, but is preferable in terms of high softening point and easy peeling of the solvent after bonding. In addition to this, a plasticizer may be mixed to prevent cracks during film formation.

The solvent is preferably one that can dissolve the above-mentioned resin and can be uniformly formed on the wafer, such as ketones (for example, acetone, methyl ethyl ketone, cyclohexane, methyl isobutyl ketone, methyl isoamyl ketone, 2-heptanone, etc.), many Monohydric alcohols or derivatives thereof (for example, ethylene glycol, propylene glycol, diethylene glycol, ethylene glycol monoacetate, propylene glycol monoacetate, diethylene glycol monoacetate or their monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether) Etc.), cyclic ethers (eg, dioxane), esters (eg, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, Methyl bottles, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate, etc.) or aromatic hydrocarbons (e.g., benzene, toluene, xylene, etc.). Among these, the above ketones or derivatives thereof are particularly preferable.

These may be used alone or in combination of two or more. In order to improve the uniformity of the film thickness, an activator may be added thereto.

(Cleaning solution for adhesive residue)
As a cleaning liquid for removing the adhesive residue remaining on the semiconductor wafer 1 after peeling the adhesive and the support member from the semiconductor wafer, in addition to the organic solvent used for the adhesive, monohydric alcohols (for example, , Methanol, ethanol, propanol, isopropanol, butanol, etc.), lactones (eg, γ-butyrolactone, etc.), lactams (eg, γ-butyrolactam, etc.), ethers (eg, diethyl ether, anisole, etc.), aldehydes ( For example, dimethylformaldehyde, dimethylacetaldehyde, etc.) may be used. Of these, the aforementioned ketones or derivatives thereof are particularly preferable.

These may be used alone or in combination of two or more. Moreover, in order to wash | clean an adhesive residue efficiently, you may add an activator to these.

Next, the present invention will be described in more detail based on examples. EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples.

Example 1
The photopolymerizable carbon-carbon duplex is bonded to the 2-hydroxypropyl acrylate side chain terminal OH group of a copolymer of 2-ethylhexyl acrylate (70 mol%), methacrylic acid (1 mol%), and 2-hydroxypropyl acrylate (29 mol%). As a compound having a bond and a functional group, an acrylic compound (A1: molecular weight 700000) having a photopolymerizable carbon-carbon double bond obtained by addition reaction of the NCO group of 2-methacryloyloxyethyl isocyanate was obtained. To 100 parts by mass of this compound (A1), 1 part by mass of trimethylolpropane-modified hexamethylene diisocyanate as polyisocyanate and 5.0 parts by mass of BASF Corp .: Irgacure 184 as a photopolymerization initiator were added and combined. A resin composition which is a radiation curable adhesive was prepared. This resin composition was applied onto a release treatment surface of a polyethylene terephthalate separator that had been subjected to a release treatment in advance so that the thickness of the pressure-sensitive adhesive layer after drying was 10 μm, and was dried at 80 ° C. for 10 minutes. Then, the adhesive tape for semiconductor processing was produced by pasting together with the corona treatment surface of the low density polyethylene by which the surface was previously corona-treated, and transferring an adhesive to a base resin film.

(Example 2)
A photopolymerizable carbon-carbon double bond and a 4-hydroxybutyl acrylate side chain terminal OH group of a copolymer of ethyl acrylate (70 mol%), methacrylic acid (1 mol%), 4-hydroxybutyl acrylate (29 mol%) and As a compound having a functional group, an acrylic compound having a photopolymerizable carbon-carbon double bond (A2: molecular weight of 180,000) was obtained by addition reaction of the NCO group of 2-methacryloyloxyethyl isocyanate. To 100 parts by mass of this compound (A2), 1 part by mass of trimethylolpropane-modified hexamethylene diisocyanate as polyisocyanate and 5 parts by mass of BASF Co., Ltd .: Irgacure 184 as a photopolymerization initiator were added and combined, followed by radiation curing. A resin composition that is a pressure-sensitive adhesive was prepared. This resin composition was applied onto a release treatment surface of a polyethylene terephthalate separator that had been subjected to a release treatment in advance so that the thickness of the pressure-sensitive adhesive layer after drying was 10 μm, and was dried at 80 ° C. for 10 minutes. Thereafter, the corona treatment of the ionomer film (base resin film) of the ethylene-acrylic acid copolymer prepared so that the surface is corona-treated in advance and the surface roughness of the opposite surface is 0.3. The adhesive tape for semiconductor processing was produced by sticking to the surface and transferring the adhesive to the base resin film.

Example 3
A semiconductor processing pressure-sensitive adhesive tape was produced in the same manner as in Example 1 except that 3 parts by mass of trimethylolpropane-modified hexamethylene diisocyanate was added as a polyisocyanate.

Example 4
A semiconductor processing pressure-sensitive adhesive tape was produced in the same manner as in Example 1 except that 0.1 part by mass of trimethylolpropane-modified hexamethylene diisocyanate was blended as the polyisocyanate.

(Example 5)
A semiconductor processing adhesive tape was prepared in the same manner as in Example 1 except that 20.0 parts by mass of pentaerythritol tetraacrylate as an ultraviolet curable resin was further added to the radiation curable adhesive of Example 1.

(Example 6)
Adhesive tape for semiconductor processing in the same manner as in Example 1 except that 0.1 parts by mass of Asahi Glass Co., Ltd. Preminol S3011 (number average molecular weight 10,000) was further added as a polypropylene oxide to the radiation curable adhesive of Example 1. Was made.

(Example 7)
Adhesive tape for semiconductor processing in the same manner as in Example 1 except that 1.0 part by mass of Asahi Glass Co., Ltd. Preminol S3006 (number average molecular weight 5000) was further added as a polypropylene oxide to the radiation curable adhesive of Example 1. Was made.

(Example 8)
In the same manner as in Example 1, except that 2.0 parts by mass of Uniol TG-4000 (number average molecular weight 4000) manufactured by NOF Corporation was added as polypropylene oxide to the radiation curable pressure-sensitive adhesive of Example 1. An adhesive tape was prepared.

Example 9
Adhesive tape for semiconductor processing in the same manner as in Example 1, except that 2.5 parts by mass of Asahi Glass Co., Ltd. Preminol S3006 (number average molecular weight 5000) was further blended with the radiation curable adhesive of Example 1 as polypropylene oxide. Was made.

(Example 10)
As the base resin film, the surface was subjected to corona treatment in advance, and the same procedure as in Example 1 was used except that low-density polyethylene prepared so that the surface roughness on the opposite side was 0.19 μm was used. An adhesive tape for semiconductor processing was produced.

(Example 11)
As the base resin film, except that an ionomer film of an ethylene-acrylic acid copolymer prepared so that the surface roughness of the surface on the opposite side was previously given and the surface roughness on the opposite side was 0.12 μm was used. In the same manner as in Example 1, an adhesive tape for semiconductor processing was produced.

Example 12
Example 1 except that an ethylene-methacrylic acid copolymer prepared so that the surface roughness of the opposite surface was 0.1 μm was used as the base resin film in advance. In the same manner, an adhesive tape for semiconductor processing was produced.

(Example 13)
Example except that an ethylene-vinyl acetate copolymer film prepared so that the surface roughness of the opposite surface was 0.08 μm was used as the base resin film in advance. In the same manner as in Example 1, a semiconductor processing adhesive tape was produced.

(Comparative Example 1)
An adhesive tape for semiconductor processing was prepared in the same manner as in Example 1 except that 30.0 parts by mass of pentaerythritol tetraacrylate as an ultraviolet curable resin was further added to the radiation curable adhesive of Example 1.

(Comparative Example 2)
A photopolymerizable carbon-carbon double group is bonded to the 2-hydroxyethyl acrylate side chain terminal OH group of a copolymer of 2-ethylhexyl acrylate (75 mol%), methacrylic acid (1 mol%), and 2-hydroxyethyl acrylate (24 mol%). As a compound having a bond and a functional group, an acrylic compound (A1: molecular weight 800000) having a photopolymerizable carbon-carbon double bond obtained by addition reaction of the NCO group of 2-methacryloyloxyethyl isocyanate was obtained. 1 part by mass of Nippon Polyurethane Industry Co., Ltd .: Coronate L as a polyisocyanate and 5.0 parts by mass of Irgacure 184 as a photopolymerization initiator are added to 100 parts by mass of this compound (A1). And the resin composition which is a radiation curable adhesive was prepared. This resin composition was applied onto the release treatment surface of the polyethylene terephthalate separator that had been previously subjected to a release treatment so that the thickness of the pressure-sensitive adhesive layer after drying was 10 μm, and was dried at 80 ° C. for 10 minutes. Thereafter, the corona treatment surface of the ethylene-vinyl acetate copolymer film (base resin film) prepared so that the surface is corona-treated in advance and the surface roughness of the opposite surface is 0.41; The adhesive tape for semiconductor processing was produced by sticking together and transferring an adhesive to a base resin film.

(Comparative Example 3)
An adhesive tape for semiconductor processing was produced in the same manner as in Example 1 except that 5 parts by mass of trimethylolpropane-modified hexamethylene diisocyanate was blended as the polyisocyanate.

(Comparative Example 4)
An adhesive tape for semiconductor processing was prepared in the same manner as in Example 1 except that 0.05 part by mass of trimethylolpropane-modified hexamethylene diisocyanate was used as a polyisocyanate manufactured by Nippon Polyurethane Industry Co., Ltd.

For each sample of Examples 1 to 13 and Comparative Examples 1 to 4, gel fraction, probe tack, solvent resistance, support member peelability, pick-up property, adhesion of adhesive residue to the back surface of the semiconductor chip (adhesive residue) ) And an evaluation test on the penetration of cutting dust was performed as follows. The obtained results are summarized in Tables 1 and 2 below.

<Gel fraction>
The separator was removed from the semiconductor processing adhesive tape cut to a size of 50 mm × 50 mm, and its mass A was weighed. Next, this weighed sample of the dicing tape for semiconductor processing was left for 48 hours in a state immersed in 100 g of methyl isobutyl ketone (MIBK), and then dried in a constant temperature layer at 50 ° C., and its mass B was weighed. Further, the pressure-sensitive adhesive layer of the sample was wiped off using 100 g of ethyl acetate, and then the mass C of the sample was weighed, and the gel fraction was calculated by the following formula (1).
Gel fraction (%) = (BC) / (AC) (1)

<Probe tack>
This was carried out using a TAC-II tacking tester manufactured by Leska. As the measurement mode, “Constant Load” was used in which the probe was pushed to the set pressure value and kept controlled until the set time passed. After the separator was peeled off, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing was turned up, and a probe made of SUS304 having a diameter of 3.0 mm was brought into contact from above. The speed at which the probe is brought into contact with the measurement sample is 30 mm / min, the contact load is 0.98 N, and the contact time is 1 second. Thereafter, the probe was peeled upward at a peeling speed of 600 mm / min, the force required for peeling was measured, and the peak value was read. The probe temperature was 23 ° C. and the plate temperature was 23 ° C.

<Surface roughness Ra>
The surface of the adhesive tape for semiconductor processing obtained in Examples and Comparative Examples is fixed by pasting the surface side to which the adhesive is applied to a smooth mirror wafer, and the arithmetic surface on the surface side where the adhesive is not applied Roughness Ra was measured at any five locations in the extrusion direction (MD direction) of the base resin film using a surface roughness measuring instrument (trade name: Surf Test SJ-301, manufactured by Mitutoyo Corporation), and the average value was measured. Asked.

<Parallel light transmittance>
The parallel light transmittance at a wavelength of 1064 nm from the surface of the pressure-sensitive adhesive tape for semiconductor processing obtained in Examples and Comparative Examples from the side where the pressure-sensitive adhesive is not applied was measured by a transmittance meter (trade name: UV3101PC & MPC-3100, manufactured by Shimadzu Corporation). ) Was used to measure the average value at five arbitrary locations. This apparatus has an integrating sphere type light-receiving part and is capable of measuring the total light transmittance. The parallel light transmittance was measured by separating the fixed position of the sample by 70 mm from the integrating sphere entrance window.

<Solvent resistance>
After bonding the adhesive tape for semiconductor processing obtained in Examples and Comparative Examples to an 8-inch semiconductor wafer and fixing it to the ring frame, while spraying methyl isobutyl ketone (MIBK) as an organic solvent from the semiconductor wafer side, Spin cleaning was performed by rotating at 20 rpm. After cleaning / drying, observe the adhesive layer in the area of the semiconductor processing dicing tape where the semiconductor wafer is not applied. If the adhesive is not dissolved or swollen, it is judged as OK and the adhesive is dissolved. Or the thing by which swelling was seen was set as x and it was set as the failure.

<Support member peelability>
By using the method disclosed in US Patent Application Publication No. 2011/0272092, a plasma polymer separation layer, a silicone rubber adhesive layer, and a support member are formed on a 6-inch silicon wafer having a thickness of about 700 μm. A structure 1 in which 2.5 mm glass plates were sequentially laminated was obtained. The adhesive tape for semiconductor processing obtained in Examples and Comparative Examples is bonded to the rear surface of the wafer (the surface on which the plasma polymer separation layer or the like is not laminated) of the structure 1 obtained as described above, and is placed on the ring frame. After fixing, the support member peelability was evaluated by using a Des-Bonder DB12T manufactured by Suss Microtec. The product that was peeled off between the plasma polymer separation layer of the support member and the wafer surface was marked as ○, and it was judged to be acceptable. No separation between the plasma polymer separation layer of the support member and the wafer surface, and between the wafer back and the adhesive tape for semiconductor processing Those that were peeled off were marked as x and rejected.

<Pickup property>
The pickup property was evaluated according to the following procedure.

(1) An 8-inch semiconductor wafer was ground to a thickness of 50 μm under the following conditions.
(Grind condition)
Grinder: “DFG-840” manufactured by DISCO Corporation
1 axis: # 600 whetstone (rotation speed: 4800 rpm, down speed: P1: 3.0 μm / sec, P2: 2.0 μm / sec)
Biaxial: # 2000 grinding wheel (rotation speed: 5500 rpm, down speed: P1: 0.8 μm / sec, P2: 0.6 μm / sec)
The back surface of the silicon wafer was ground by 30 μm on two axes, and then ground so that the final thickness of the silicon wafer was 50 μm.

(2) Within 5 minutes after completion of grinding in (1) (hereinafter referred to as condition (ii)) or after standing for 24 hours (hereinafter referred to as condition (i)), the dicing tape of each example was added to the above-mentioned (1) In addition to being adhered to the ground surface of the semiconductor wafer obtained in the above, it was fixed to a ring frame.

(3) The semiconductor wafer fixed to the ring frame in (2) was fully cut into a 15 × 10 mm square along the set division planned line under the following conditions using a dicing apparatus (DAD340 manufactured by DISCO). .
(Dicing conditions)
Dicer: “DFD-340” manufactured by DISCO Corporation
Blade: “27HECC” manufactured by DISCO Corporation
Blade rotation speed: 40000 rpm
Dicing speed: 100mm / sec
Dicing depth: 25μm
Cut mode: Down cut dicing size: 10.0 × 10.0mm

(4) After 7 days have passed since the adhesive tape for semiconductor processing was adhered, from the base resin film side of the adhesive tape for semiconductor processing, after irradiating ultraviolet rays at 100 mJ / mm 2 to cure the adhesive layer, The separated semiconductor chip was picked up using a die picker device (CAP-300II manufactured by Canon Machinery Co., Ltd.). Pick up 50 arbitrary semiconductor chips under the following pickup conditions, count the number of semiconductor chips successfully picked up, and if all 50 semiconductor chips are successfully picked up under the above conditions (i) and (ii) ◎ Although all 50 semiconductor chips were successfully picked up under condition (i), a picking error occurred under condition (ii) as ◯, and a picking up error occurred under condition (i) as x. , ◎ and ○ were judged to be acceptable, and x was judged to be unacceptable.
(Pickup conditions)
Die bonder: “CAP-300II” manufactured by Canon Machinery Inc.
Number of pins: 4-pin spacing: 7.8 x 7.8 mm
Pin tip curvature: 0.25mm
Pin push-up amount: 0.40mm

<Adhesive residue>
The back surface of the semiconductor chip obtained by the evaluation of the pick-up property was observed with a microscope, and when there was no adhesive residue, it was judged as “good”, and when the adhesive residue was generated, it was judged as “poor”.

<Infiltration of cutting dust>
The back side of the semiconductor chip obtained by evaluating the pick-up property was observed with a microscope, and when there was no cutting dust intrusion, ○, when some cutting dust intrusion occurred, the level with no problem in practical use was passed and passed. It was judged as “No”, and those that could cause problems in actual use due to severe penetration of cutting dust were evaluated as “x”.

<Chip division ratio>
After bonding the adhesive tape for semiconductor processing obtained in Examples and Comparative Examples to a 100 μm thick 8-inch semiconductor wafer and fixing it to the ring frame, it was passed through the adhesive tape for semiconductor processing under the stealth dicing conditions shown below. After forming a modified region inside the semiconductor wafer by irradiating with a laser, using an expanding device (DDS Co., Ltd., DDS2300), the adhesive tape for semiconductor processing is expanded under the conditions of 300 mm / second and 10 mm withdrawal, The wafer was divided into chips. Thereafter, the number of chips that were completely separated into pieces by visual inspection was counted, and those that were divided by 98% or more of the whole were ○, and those that were 90% or more and less than 98% were set as acceptable Δ, and passed. Judgment, less than 90% was judged as x and rejected.
<Stealth dicing conditions>
-Equipment: Nd-YAG laser-Wavelength: 1064 nm
・ Repetition frequency: 100 kHz
・ Pulse width: 30 ns
・ Cut speed: 100 mm / sec ・ Cut chip size: 5 mm × 5 mm

<Chip spacing ratio>
The semiconductor wafer used for the evaluation of the chip division rate described above was observed using an optical microscope, and 20 chips randomly extracted from the chips that were successfully divided, and the adjacent chips on the top, bottom, left, and right of the chips, respectively. The interval between the chips was measured. Of these chip intervals, the ratio of the average value of the chip intervals between the upper and lower adjacent chips and the average value of the chip intervals between the left and right adjacent chips (average value of the chip intervals between the upper and lower adjacent chips / right and left An average chip spacing between adjacent chips) of 0.8 or more and 1.25 or less is marked as very good, and 0.6 or more and less than 0.8% and more than 1.25 and 1.67 or less. Is relatively good ○, 0.4 to less than 0.6% and greater than 1.67 to 2.5 or less as acceptable Δ, passed, otherwise In addition, when the chip split ratio was evaluated, the test was rejected as x.

As shown in Tables 1 and 2, Examples 1 to 13 in which the gel fraction of the pressure-sensitive adhesive layer is 65% or more and the peak value of the probe tack test before the ultraviolet irradiation of the pressure-sensitive adhesive layer is 200 to 600 kPa The semiconductor processing pressure-sensitive adhesive tape is acceptable in all evaluation items, and can be used practically without problems in the production of semiconductor elements including a glass support process. In particular, the pressure-sensitive adhesive layer comprises at least an acrylic polymer having a radiation-curable carbon-carbon double bond in the molecule, a photopolymerization initiator, and polypropylene oxide, and the polypropylene oxide is a radiation-curable pressure-sensitive adhesive layer. In Examples 6 to 8, which are 0.1% by mass or more and 2.0% by mass or less with respect to the total solid content, the pickup property is further excellent, and there is no occurrence of cutting dust intrusion, which is particularly excellent. It was a thing. In Example 9 in which the polypropylene oxide exceeds 2.0 mass% with respect to the total solid content of the radiation-curable pressure-sensitive adhesive layer, the pick-up property was superior to Examples 1 to 5, but the intrusion of cutting dust was one. Although it occurred in the department, it was at a level where there was no problem in actual use. In Examples 1 to 13, in which the parallel light transmittance of light having a wavelength of 1064 nm incident from the base resin film side of the adhesive tape for semiconductor processing is 88% or more and less than 100%, all of them have practical problems in terms of chip division rate. This is suitable for stealth dicing that divides the wafer into chips using an expander after forming a modified region inside the semiconductor wafer by irradiating a laser through an adhesive tape for semiconductor processing. I was able to. In particular, in Examples 10 to 13 in which the parallel light transmittance was 93 to 99%, all resulted in excellent chip division ratios. In addition, Examples 1 to 12 in which the surface roughness Ra on the side opposite to the pressure-sensitive adhesive layer of the base resin film was 0.1 μm or more and 0.3 μm or less gave excellent results in the chip spacing ratio.

On the other hand, in Comparative Example 1 in which the gel fraction of the adhesive layer is less than 65%, dissolution or swelling of the adhesive is observed in the solvent resistance test, and in Comparative Examples 2 and 3 in which the tack force is less than 200 kPa, In Comparative Example 3 in which peeling was unsuccessful and the tack force was greater than 600 kPa, adhesive residue was generated on the back surface of the chip, indicating that none was suitable for manufacturing a semiconductor device including a glass support process. In Comparative Example 2 in which the parallel light transmittance of light having a wavelength of 1064 nm incident from the base resin film side in the adhesive tape for semiconductor processing was less than 88%, the chip division ratio was insufficient.

Claims

After a support member that provides supportability to the semiconductor wafer is bonded and the back surface of the semiconductor wafer is polished, the support member is bonded to the polishing surface of the semiconductor wafer prior to peeling of the support member. Is a semiconductor processing adhesive tape used for dicing the semiconductor wafer,
A radiation curable pressure-sensitive adhesive layer is formed on at least one surface of the base resin film,
The pressure-sensitive adhesive layer contains all of the following compounds (a) to (c):
(A) An acrylic compound having an unsaturated double bond consisting of the following compounds (a1) to (a3) and having a weight average molecular weight of 100,000 to 2,000,000 (a1) pentyl acrylate, n-butyl acrylate , Isobutyl acrylate, ethyl acrylate, methyl acrylate, hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, methoxyethyl acrylate, ethoxyethyl acrylate or similar methacrylates, acrylic acid, Methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, hydroxyalkyl acrylates, hydroxyalkyl methacrylates, glycol monoa Chlorates, glycol monomethacrylates, N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, anhydrous One or more polymers selected from itaconic acid, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, vinyl acetate, styrene, acrylonitrile, vinyl alcohol, or several polymers (A2) The acrylic compound having a functional group copolymerized with the compound (a1) may be hydroxyalkyl acrylates or hydroxyalkyl acrylamides. (A3) As a compound having a functional group capable of addition reaction with the compound (a1) and a photopolymerizable carbon-carbon double bond, the side chain subject to the addition reaction is a carboxyl group Alternatively, when it is an acid anhydride, glycidyl (meth) acrylate, and when the side chain targeted for the addition reaction is an epoxy group, (meth) acrylic acid, the side chain targeted for the addition reaction is a hydroxyl group. In some cases, the diisocyanate alkyl (meth) acrylate (b) photopolymerization initiator (c) 0.1 to 15 parts by mass of the polyisocyanate with respect to 100 parts by mass of the compound (a) The gel fraction with respect to methyl isobutyl ketone, which is a cleaning liquid for cleaning the adhesive residue used for pasting the support member before ultraviolet irradiation, is 65% or more and 100% or less. Next,
Further, a SUS304 probe having a diameter of 3.0 mm at 23 ° C. before the UV irradiation of the pressure-sensitive adhesive layer was contacted for 1 second at a speed of 30 mm / min and a contact load of 0.98 N, and then the probe was 600 mm. The compounds (a) to (c) of the pressure-sensitive adhesive layer are adjusted so that the peak value of the probe tack test for measuring the force required to peel upward at a peeling rate of / min is 200 to 600 kPa. An adhesive tape for semiconductor processing.
The pressure-sensitive adhesive layer further contains polypropylene oxide,
The pressure-sensitive adhesive tape for semiconductor processing according to claim 1, wherein the polypropylene oxide is contained in an amount of 0.1% by mass or more and 2.0% by mass or less based on the total solid content of the pressure-sensitive adhesive layer.
3. The pressure-sensitive adhesive tape for semiconductor processing according to claim 2, wherein the polypropylene oxide has a number average molecular weight of more than 3000 and 10,000 or less.
The adhesive tape for semiconductor processing according to any one of claims 1 to 3, wherein the parallel light transmittance of light having a wavelength of 1064 nm incident from the base resin film side is 88% or more and less than 100%.
The semiconductor processing adhesive according to any one of claims 1 to 4, wherein the surface roughness Ra of the base resin film opposite to the adhesive layer is 0.1 µm or more and 0.3 µm or less. tape.
The semiconductor processing adhesive according to any one of claims 1 to 5, wherein the surface roughness Ra of the base resin film opposite to the adhesive layer is from 0.12 µm to 0.19 µm. tape.