WO2015011124A1

WO2015011124A1 - Production of a layer element for an optoelectronic semiconductor chip

Info

Publication number: WO2015011124A1
Application number: PCT/EP2014/065692
Authority: WO
Inventors: Markus Burger; Rainer BRADL; Martin Brandl
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2013-07-23
Filing date: 2014-07-22
Publication date: 2015-01-29
Also published as: DE102013214400A1

Abstract

The invention relates to a method for producing a layer element for an optoelectronic semiconductor chip. The method comprises providing an initial layer. The initial layer has a recess. The method also comprises structuring the initial layer in order to form the layer element. The layer element has a cut-out portion, which is formed at least partially from the recess of the initial layer. The invention further relates to a method for producing an optoelectronic component.

Description

description

Production of a Layer Element for an Optoelectronic Semiconductor Chip

The invention relates to a method for producing a layer element for an optoelectronic semiconductor chip. The invention further relates to a method for producing an optoelectronic component.

This patent application claims the priority of German Patent Application 10 2013 214 400.8, the disclosure of which is hereby incorporated by reference. An optoelectronic component may comprise a rule ^¬ optoelectronic semiconductor chip for generating light radiation and at least one conversion material (phosphor) for Strah ^¬ lung conversion. The semiconductor chip may be a so-called surface emitter which emits the radiation substantially via a front surface. On the front, a layer or platelet-shaped conversion element can be arranged, which has the at least one phosphor, so that a surface conversion (chip level conversion, CLC) is present. The conversion plate may have an edge-side recess, via which a front-side contact of the semiconductor chip is free.

Dimensionally accurate conversion elements can be produced, for example, by providing a ceramic layer and carrying out a stamping process. This procedure is complicated and expensive. Another method involves a sur fa ^¬ chiges applying a phosphor particle-containing ^¬ Ma terials on semiconductor chips of a wafer before the Vereinze- lung. Front side contacts of the semiconductor chips can be used for

Example can be exposed using a laser. A laser can also be used in an alternative method in which a full-surface area containing a phosphor particle Layer is structured in conversion elements. In ^comparison to processes such as sawing or cutting, by means of which rectangular conversion elements can be produced without recesses, the use of a laser is complex and expensive. Another disadvantage is a heat input, which can result in damage to phosphor particles.

It is also possible to realize an optoelectronic component, in which another layer element is arranged on a optoelectronic semiconductor ^¬ semiconductor chip instead of a conversion element. The layer element may also have an edge-side recess over which a front-side contact of the semiconductor chip is free.

The object of the present invention is to provide an improved solution for a layer element with a randsei- term recess, which can be arranged on an optoelectronic semiconductor chip.

This problem is solved by the features of the independent Pa ^¬ tentansprüche. Further advantageous embodiments of the invention are specified in the dependent claims. According to one aspect of the invention, a method for producing a layer element for an optoelectronic semiconductor chip is proposed. The method includes providing an initial layer. The provided starting ^¬ layer has a recess. The method further comprises patterning the starting layer to form the layer element. The layer element produced by structuring has a recess, which is formed at least partially from the recess of the starting layer. In the method, instead of a full-surface layer, an output layer is provided which has a recess. The patterning of the starting layer can be carried out in such a way as to produce a platelet-like Layer element is formed, which has a present in a Randbe ^¬ rich recess, wherein the recess at least partially emerges from the recess of the starting layer. In this case, the structuring of the starting layer can take place by means of a mechanical process in which the starting layer is cut through in a simple and rapid manner at corresponding points. Disadvantages of a laser separation process such as a high cost and high costs can be avoided as a result. In structuring the starting layer, the layer element can be singulated.

Due to the edge-side recess, the layer element can be used on an optoelectronic semiconductor chip, which has a front-side contact. The front-side contact can be exempted via the recess of the Schich ^¬ telements.

The recess of the layer element may, for example, have a rectangular shape. Alternatively, the recess may have a curved shape or a radius, or even a different form be ^¬ undesirables. This also applies to the recess of the starting layer, from which the recess of the

Layer element is formed at least in part.

In a further embodiment of the method, the structuring of the starting layer comprises a severing of the starting layer along separating lines running perpendicular to one another. This will make a simple and fast

Structuring the output layer for forming or separating the layer element further favors. The sheet member formed by the struc ^¬ centering along vertically oriented dividing lines may have a rectangle, or a quad ^¬ rat corresponding outer contour, deviating the recess is present at the edge of the rectangular shape or in a corner region. The structuring of the starting layer can also take place along dividing lines which are not perpendicular to one another. In this way, the layer element formed by structuring the starting layer can have a different shape. A possible example is a hexagon corresponding to an outer contour, wherein the recess is present in deviation from the hexagon ^¬ form at the edge or in a corner region. In a further embodiment of the method, the

Structuring the output layer carried out such that a plurality of layer elements are formed, which have a Ausspa ^¬ tion. It is provided that the recesses of a plurality of layer elements are formed from the recess of the starting layer. In other words, in this

Embodiment of the method, the recess of the output layer divided into a plurality of layer elements for forming the dazugehö ^¬ rigen recesses. As a result, the recess of the starting layer can have relatively large lateral dimensions. As a result, a simple provision and structuring of the output ^layer can likewise be made possible.

For example, it is possible for four recesses of correspondingly four layer elements to be formed from the recess of the output layer in the structuring step. In the case of a separation of the starting layer, which, for example, can take place along perpendicular separating lines as described above, four edge-side recesses can emerge from the recess of the starting layer by intersecting two separating lines running perpendicular to one another in a region within the recess.

Rather than implement the recess of the output layer in the four recesses of layer elements, can also be provided that the recess is reacted completely not only in part, but in a single edge-side recess in a Schich ^¬ wick member. It is also possible that from the recess of the starting layer a different number of Ausspa- ments, for example two recesses of correspondingly two layer elements.

With respect to generating a plurality of layer elements is provided in egg ner further embodiment of the method is that the provided output layer has a plurality of recesses on ^¬. Here, the patterning of the output layer is performed such that a plurality of layer elements are formed, each having a formed at least in part from a corresponding recess of the output layer from ^¬ savings. The structuring of the starting layer into the multiple and a recess having layer elements here can be relatively easily and quickly performed. Also in the aforementioned embodiment of the method may be considered that each recess of the starting layer into a plurality of recesses, for example, four Aus ^¬ savings of layer elements, as described above, is implemented.

In one providing the output layer having a plurality of recesses is provided in accordance with another embodiment of the method to perform the patterning of the output layer so that the or (at least) Telement a Schich- two recesses which respectively Wenig ^¬ least the part from a corresponding recess Starting layer are formed. A layer element with a sol ^¬ chen embodiment can be used on an optoelectronic semiconductor chip is used, which has two front-side contacts.

In another embodiment, the (at least one) produced by the process layer element is a Konversi ^¬ onselement to the radiation conversion. In this case, loading, the riding detected output layer from which the conversion element is formed on a ^¬ conversion material. The Kon ^¬ version element can be arranged on an optoelectronic semiconductor chip. During operation of the semiconductor chip can an emitted from the semiconductor chip electromagnetic radiation using the conversion element at least partially ^{¬ be} converted. In a further embodiment of the method, the starting layer has a radiation-transmissive base material in which the conversion material is contained.

As a result, a cost-effective provision of the conversion material having the starting layer is possible. The

Base material may be, for example, silicone. The Konversi ^¬ onsmaterial may for example be in the form of fluorescent Parti ^¬ angles, which are embedded in the base material.

In a further embodiment of the method, which may be used in this context, the provision of the starting layer comprises performing a

Printing process. The printing process allows a simple and inexpensive provision of the starting layer with the recess (s). The printing process can be, for example, a screen printing process or a stencil printing process. If a particle- ^filled base material is used, this is in a liquid or viscous state during printing. The printed starting ^¬ layer can be dried or hardened before structuring.

In the printing process, the starting layer can be printed with the recess (s). In this case, a suitable printing form can be used. The printing form may have an area permeable to printing the output layer and one or a plurality of impermeable areas for forming the recess (s).

It is possible that the starting layer has not only a single conversion material for radiation conversion, but several different conversion materials for radiation conversion. In such an embodiment, the starting layer may also be a radiation-transmissive Have base material such as silicone, in which the different conversion materials, in particular in the form of phosphor particles, contained or embedded.

Using the method also can be instead of a Konversi ^¬ onselements (at least) one other layer element forth ^¬ filters. This can be a clear or transparent, radiation, ^¬ by layer element. The strahlungsdurchläs- sige layer element can come to an optoelectronic semi ^¬ conductor chip for use to enable, for example, an improved coupling out radiation. In such an embodiment, the initial layer may also be a strah ^¬ lung permeable material such as silicone aufwei- sen, and the output layer can be provided by performing a printing process. When printing, the material of the initial layer is in a liquid or zähflüs ^¬ sigen state. The printed starting layer can be dried or hardened before structuring. It is also possible that the output layer and thus also the (Wenig ^¬ least one) layer element have a different radiation-permeable material such as a glass material.

In a further embodiment of the method, the structuring of the starting ^layer comprises carrying out a sawing process or a cutting process. Such processes ^enable a simple and rapid structuring and thereby singulation of the starting layer. The structuring can also take place without damaging a conversion material contained in the starting layer, if appropriate.

According to a further aspect of the invention, a method for producing an optoelectronic component is proposed. In the method, a layered element is produced by carrying out the above-described method or one of the above-described embodiments of the method. Subsequently, the layer ^{element is} arranged on an opto ^¬ electronic semiconductor chip. The optoelectronic semiconductor chip may have a front surface for emitting radiation and a contact present in the region of the front side. In this case, the layer element can be arranged on the front side of the semiconductor ^chip such that the front-side contact is exposed beyond the recess of the layer element and therefore freely accessible for contacting, for example via a bonding wire. It is advantageous that the film element, as indicated above, ^¬ provides Herge in a simple and cost-effective manner can be.

The optoelectronic semiconductor chip can be, for example, a light-emitting diode chip (light emitting diode, LED) designed to generate light radiation. The optoelectronic semiconductor chip may further be a surface emitter which emits a substantial portion of the radiation across the front surface. In one embodiment of the layer element as a conversion element that can cause a surface conversion disposed on the upstream surface of the semiconductor chip derseitigen Kon ^¬ version element. The conversion element can therefore also be referred to as CLC layer or CLC plate. The above-explained and / or reproduced in the dependent claims advantageous embodiments and refinements of the invention can - except for example in cases of clear dependencies or incompatible alternatives - individually or in any combination with each other are used.

The above-described characteristics, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understood in connection with the following description of exemplary embodiments, which are explained in more detail in connection with the schematic drawings. Show it: Figure 1 is a AufSichtsdarstellung a conversion element with a recess;

FIG. 2 shows a top view of an optoelectronic semiconductor chip with a front-side contact;

Figure 3 is a perspective view of an output layer produced by printing having recesses; Figure 4 is a further perspective view of the off ^¬ transition layer with a representation of possible dividing lines along which severing of the output layer can be carried out for forming singulated conversion elements; FIG. 5 is a view similar to FIG. 4 of the starting layer with possible dividing lines for forming conversion elements;

FIG. 6 shows a side view of an optoelectronic component; and

Figures 7 to 9 are further perspective views showing an output layer with possible recesses and dividing lines for forming conversion elements.

On the basis of the following schematic figures, a concept will be described with the aid of which dimensionally stable conversion elements for radiation conversion can be produced in a simple, rapid and cost-effective manner. A production of the conversion elements is carried out in the context of the production of optoelectronic components. In this case, known processes can be carried out from semiconductor technology and from the production of optoelectronic components, and customary materials can be used in this field, so that this is only partially discussed. It is further noted that the figures are merely schematic in nature and are not to scale. In this sense, components shown in the figures and Structures may be exaggerated or oversized for clarity.

FIG. 1 shows a top view of a platelet-shaped conversion element 100 used for radiation conversion. The conversion element 100 has an outer contour which corresponds to a rectangle or a square, wherein a recess 105 is present at the edge or in a corner region, unlike the rectangular shape. The recess 105 of the conversion element 100 may, as shown in Figure 1, egg ^¬ ne rectangular or square geometry. The shape of the conversion element 100 with the edge-side Ausspa ^¬ tion 105 is matched to the shape of a front of a optoelekt ^¬ tronic semiconductor chip 150 to element 100 arrange the CONVERSION thereto.

2 shows a top view of an optoelectronic semiconductor chip 150 designed to generate electromagnetic radiation. Semiconductor chip 150 has a contact 155 at a corner in the region of the front side shown in FIG. 2, via which semiconductor chip 150 is contacted on the front side can. Due to the recess 105, the plate-shaped conversion element 100 can be arranged on the front side of the semiconductor chip 150 in such a way that the contact 155 is exposed via the recess 105 and thus accessible.

The contact 155 may, for example, be in the form of a contact surface which is suitable for contacting with the aid of a bonding wire 165 (bonding pad). This is illustrated in Figure 6 for an optoelectronic device 160 having the semiconductor chip 150 and the front side is arranged on the semi-conductor chip 150 ^¬ conversion platelets 100th The recess 105 can therefore also be referred to as a bond pad recess or bond pad opening.

The optoelectronic semiconductor chip 150 can in particular be a light-emitting diode or LED chip for generating a light Be radiation. The semiconductor chip 150 can furthermore be a surface-emitter produced by thin film technology, in which a substantial part of the generated radiation is emitted via its front side and can thereby be coupled into the conversion element 100 provided in the region of the front side. The front side of the semiconductor chip 150 is also referred to as the light ^{exit side} . With the aid of the conversion element 100, the primary generated by the semiconductor chip 150

Light radiation to be at least partially converted. A surface emitter has a surface conversion. For generating the radiation, electrical energy can be supplied to the semiconductor chip 150 via the front-side contact 155 and a rear-side contact. The back print ^¬ term contact is formed at a front side of the opposite back of the semiconductor chip 150 (not Darge ^¬ asserted). The semiconductor chip 150 may be prepared in a known manner and which in addition to the contacts components such as a semiconductor layer sequence with a ak ^¬ tive zone for generating radiation, so that it will be explained in more detail.

The primary and emitted by the semiconductor chip 150 light radiation may be, for example, a blue light radiation. About the conversion element 100, the primary light radiation is at least partially converted to one or meh ^¬ eral light radiation of a different or more other wavelength ranges, for example in the green to red Spekt ^¬ ralbereich. In this way, can be produced a light ^¬ radiation with a desired color, for example, change to a white light radiation, which can be delivered via the Konversi ^¬ onselement 100th

The radiation conversion takes place with the aid of one or more different conversion materials. To enable borrowed a simple and inexpensive manufacture, as is described in more detail below, includes the conversion element 100, a radiation-transmissive base or Mat ^¬ rixmaterial and disposed therein luminescent particles from egg one or more different conversion materials, or a mixture of phosphor particles of different conversion materials (not shown). The Grundma ^¬ TERIAL may for example be a silicone material. Possible conversion materials or phosphors, which can be considered for the conversion element 100 are gallate the case ^¬ game rare-earth doped garnets, rare earth doped alkaline earth sulfides, rare-earth-doped thio, doped with rare earth aluminates, rare earth doped silicates, rare earth doped Orthosi- silicates, rare earth doped chlorosilicates doped sel ^¬ requested Erdalkalisiliziumnitride earth doped rare earth oxynitrides, rare earth doped aluminum niumoxinitride with, rare earth doped silicon nitride, or rare earth doped sialones.

FIGS. 3 and 4 show a perspective view of a method by means of which a plurality of conversion elements 100 can be produced in a simple, fast and cost-effective manner. At the beginning of the process, a large-area output ^¬ layer 110 as shown in Figure 3, is provided. The starting layer 110 comprises the previously described material composition, ie a radiation-transmissive base material with arranged therein

Phosphor particles (not shown).

The provided output layer 110, which is only partially shown in FIG. 3 and also in other figures, furthermore has a plurality of recesses 115. The recesses 115, which may have a rectangular or square shape, extend completely between opposite main sides of the flat starting layer 110. As indicated in FIG. 3, the recesses 115 are in the form of a grid or in the form of lines and Columns over the surface of the output ^layer 110 ver ^¬ shares arranged. Providing the output layer 110 may be performed using ei ^¬ nes simple and inexpensive printing process. In such an approach, as is indicated schematically in Figure 3, a suitable printing plate 120 is used. The printing form 120 has a region 121 permeable to the printing of the output layer 110 and a plurality of impermeable regions 125 for forming the recesses 115. The impermeable regions 125 are matched to the shape and position of the recesses 115.

It is possible that the printing form 120 is a screen printing form with a screen mesh (not shown). In this Substituted ^¬ staltung the opaque areas may be formed by a layer-structured and arranged on the screen mesh 125 emulsion, which masks the screen fabric or locally in the areas of 125, whereas the range is kiert unmas- 121st

In another possible embodiment, the printing form 120 may be a stencil printing form. Herein, in the transmissive region 121, there may be a lattice structure suitable for printing the output layer 110 and including apertures (not shown). The lattice structure can provide ^adequate stability and enable printing with a homogeneous layer thickness. The impermeable regions 125, in contrast, have no lattice structure and no openings.

In the printing process, the base material with the embedded phosphor particles is applied via the printing form 120 to a support suitable for printing and thereby forming the phosphor layer 110, for example a substrate (not shown). Here, the partikelge ^¬ filled base material in a liquid or viscous inflow is standing. When printing a printing squeegee, not shown, is set a ^¬ which is passed over the printing form 120, so that the previously applied to the printing form base material 120 with the phosphor particles through the transmissive area 121 is pressed through. Thereafter, drying or curing of the printed layer 110 can take place.

Subsequently, the starting layer 110, as indicated in FIG. 4, is structured into individual platelet-shaped conversion elements 100. In this process, a through ^¬ disconnect the output layer 110 along perpendicular zuei ^¬ Nander oriented dividing lines 131, 132. A similar to Figure 4 top view of the output layer 110 with a representation of the separation lines 131 is carried out, 132 is further shown in FIG. 5 In Figure 5, but also in the other figures, are horizontally extending dividing lines by the reference numeral 131, and vertically extending dividing lines with the Be ^¬ reference numbers 132, respectively.

Figure 5 illustrates further, with reference to a hervorge ^¬ levied hatching, an image formed by the separation of the output layer 110 conversion element 100. The Konversi ^¬ onselement 100 has the mold with the edge-side recess 105 as described above on. The severing of the output layer 110 is conducted such that the Ausspa ^¬ tion 105 emerges from a part of a recess 115 of the output layer 110th Is further clear from Figure 5 that are reacted at the cutting recesses 115 of the output layer 110 in each of four recesses 105 corresponding to four Konversionsele ^¬ elements 100th The dividing lines 131, 132 are selected for this purpose such that in a region within a recess 115, a horizontal dividing line 131 and a vertical dividing line 132 intersect.

The provision of recesses 115 in the starting layer 110 thus offers the possibility of structuring the starting layer 110 in a simple manner into a plurality of dimensionally true platelet-shaped conversion elements 100 with peripheral recesses 105. The severing of the starting layer 110 along the straight line and at right angles to each other running dividing lines 131, 132 can be done in a fast feasible mechanical separation process, for example, sawing or cutting. Here, a not shown sawing or cutting device is used. In addition to the high speed, another advantage of the mechanical cutting is that a heat input and thereby a possible damage of phosphor particles on the edge of a conversion element 100, as it can occur in a Lasertrennpro- process, is avoided.

The production of conversion elements 100 explained with reference to FIGS. 3 to 5 is used in the context of the production of optoelectronic components 160. For illustration, Figure 6 shows a side view of a possible embodiment of such an optoelectronic component 160. The component 160 includes an optoelectronic semiconductor chip 150, as already described above, and disposed on a front or light exit side of the semi ^¬ semiconductor chip 150 Conversion element 100 on.

In the manufacture of the device 160, the conversion ^¬ element 100 may, for example, using a non gezeig ^¬ th radiation-transparent adhesive, for example, a silicone adhesive, are adhered to the semiconductor chip 150th In this case, the conversion element 100 is so positioned on the semi-conductor chip 150 ^¬ that the front-side contact 155 of the semiconductor chip remains free 150th

The semiconductor chip 150 is furthermore arranged on a carrier 161, as shown in FIG. Disposing the semiconductor chip 150 on the substrate 161 may take place before, 100 on the semi-conductor chip 150 ^¬ or after the arrangement of the conversion element. Here, the semiconductor chip 150 may, for example, via the aforementioned rear-side contact electrically and mechanically, for example via a solder, with a corresponding counter contact of the support 161 verbun ^¬ (not shown). Figure 6 further illustrates a possible contacting of the front-side contact 155 of the semiconductor chip 150. The front-side contact 155 is connected via a bonding wire 165 to another mating contact, not shown, of the carrier 161. It is possible to realize the optoelectronic component 160 also with a plurality of semiconductor chips 150 arranged on the carrier 161. In this case, a conversion element 100 can be arranged on each semiconductor chip 150. On the basis of the following figures, further embodiments of a method for the production of platelet-shaped conversion elements intended for a surface conversion are described, in which an output layer 110 with recesses 115 is likewise provided, and from this conversion elements are separated out. Identical and equivalent components and structures, possible process steps possible benefits and so will not be described in consequences ^¬ again in detail. Instead, reference is made to the above statements.

FIG. 7 shows a plan view of a printed starting layer 110 with recesses 115, including a representation of dividing lines 131, 132 for cutting through the starting layer 110. The starting layer 110 has such an arrangement of recesses 115, and the dividing lines 131, 132 for the severing of the output layer 110 are such ge selects ^¬ that platelet-shaped conversion elements 101 are ^¬ ge gained with two edge-side recesses 105 of the output layer 110th FIG. 7 clarifies this with reference to a conversion element 101 highlighted by the hatching.

The two recesses 105 of a conversion element 101 are, with respect to the (otherwise) a rectangle or square corresponding outer contour, arranged on diagonally opposite Eckbereichen. A conversion element 101 having such a configuration can be used on a semiconductor chip which has two diagonally opposite diodes. has overlying corners arranged front side contacts (not shown).

In the example shown in Figure 7 patterning the throughput will disconnect the output layer 110 also performs such Runaway ^¬ that recesses 115 of the output layer are implemented by corresponding four ^¬ conversion elements 101 each in four recesses 105,110. The dividing lines 131, 132 are predetermined for this purpose such that in a region within a recess 115, a horizontal dividing line 131 and a vertical dividing line 132 intersect.

FIG. 8 shows a further view of a printed starting layer 110 with recesses 115, as well as dividing lines 131, 132 for cutting through the starting layer 110. The starting layer 110 has such an arrangement of recesses 115, and the dividing lines 131, 132 are selected such that they are platelet-shaped Conversion elements 102 are formed with two edge-side recesses 105 from the initial layer 110. FIG. 8 clarifies this with reference to a conversion element 102 highlighted by the hatching.

In contrast to a conversion element 101 of Figure 7, the two recesses are arranged opposite diagonal 105 at a conversion element 102 but be ^¬ can be found at the ends in the area of the same edge side of the respective conversion element 102. A conversion element 102 may, therefore, on a semiconductor chip for use come, which has two arranged on corners of the same edge side front side contacts (not shown).

Even in the case of the singulation shown in FIG. 8, the output layer 110 is severed in such a way that recesses 115 of the output layer 110 are respectively converted into four recesses 105 of correspondingly four conversion elements 102. The dividing lines 131, 132 are selected for this purpose in such a way that in a region within a recess 115 an ne horizontal dividing line 131 and a vertical dividing line 132 intersect.

Figure 9 shows a further plan view of an overall printed output layer 110, as well as dividing lines 131, 132 for the severing of the output layer 110. Here, the output layer 110 is re-structured in conversion elements 100 with egg ^¬ ner individual edge-side recess 105 as shown in Figure 9, using a hatched by the hatching conversion element 100 is illustrated. The Ausnehmun ^¬ gen 115 of output layer 110 and the dividing lines 131, 132 are in this case, that a recess is not converted only partly but completely in a recess 105 ei ^¬ nes conversion element 100 115 chosen so. Therefore, two dividing lines 131, 132 intersect no longer within, but at the edge of a recess 115th

The embodiments explained with reference to the figures represent preferred or exemplary embodiments of the invention. In addition to the described and illustrated embodiments, further embodiments are conceivable which may include further modifications and / or combinations of features. For example, it is possible to use other materials instead of the above materials. For example, appropriate and radiation-transparent base material such as an epoxy material can be used instead of a silicone material to another for a Dru ^¬ CKEN. The same applies for the above colors or spectral regions, which are replaced by other colors or spectral Kings ^¬ nen.

In a further embodiment, conversion elements can be produced by structuring a recesses 115 having output layer 110, in which edge-side savings ^¬ 105 in contrast to the conversion elements 100, 101, 102 not in a corner, but at another Place, for example, in the region of the center of a side edge, present. In such an embodiment, a recess 115 can be divided into two recesses of correspondingly two conversion elements.

In a further embodiment, an output layer 110 is not only, as indicated in the figures, be in convergence ^¬ sion elements with a matching contour, but in conversion elements having different geometries structured manner. For example, a common structures of an output layer 110 can take place both in conversion elements 100 and in conversion elements 101.

The embodiments described above, which can also be used in combination, can be realized by a corresponding arrangement of recesses 115 in an output layer 110 and definition of dividing lines 131, 132 for the severing of the output layer 110. Furthermore, it is possible to form recesses 105 of conversion elements instead of the shown rectangular shape with a different shape, for example a curved or circular or quarter-circle-shaped contour. Also, a front contact 155 of a semiconductor chip 150 may have a corresponding curved geometry. Such Substituted ^¬ staltungen can be realized with a curved contour or circular shape of recesses 115 an output layer 110th In a further refinement, an output layer 110 and thereby a ^conversion element formed from the output layer 110 may comprise a radiation-transmissive base material in which, in addition to phosphor particles, further particles, for example reflective particles, are arranged. Such a particle-filled material may also be printed to form an initial layer 110. Furthermore, attention is drawn to the possibility of a ^¬ we nigstens a conversion material having output layer 110 with recesses 115 is not using a Druckprozes ^¬ ses, but provide other way. Examples of play can be provided a ceramic layer 110 with output from ^¬ recesses 115, which has at least one conversion material. The ceramic starting layer can be produced by sintering. Recesses 115 may be present or produced before, or after sintering.

In a further embodiment, the structuring of an output layer 110 can be carried out along dividing lines which are not perpendicular to one another but are oriented at a different angle or at different angles to one another. In this way, conversion elements can be formed with other than the outer contours shown in the figures. A possible example is a corresponding one of six ^¬ eck outer contour, deviating from the

Hexagonal shape can be present at the edge or in a corner area a recess.

In addition, the possibility exists of producing other layer elements instead of Kon ^¬ version elements, which can be arranged on optoelectronic semiconductor chips or LED chips bar. These may be clear radiation- ^transmissive layer elements. Such layer elements can be used on semiconductor chips to enable, for example, a modified radiation decoupling. In such an embodiment, the method may also be an off ^¬ junction layer 110 generates with recesses 115, and nachfol ^¬ quietly structured in layer elements with peripheral recesses. It should be noted that with respect to Konversi ^¬ onselemente mentioned details in such layer elements may be used above analogy. For example, a clear layered element produced by the method can be used in the Supervision of Figure 1 have a corresponding contour. Also possible are other contours, as shown with respect to conversion ^¬ elements in the other figures or described above. The output layer used in such an embodiment may further be, for example, formed of a ^pressure-¬ cash radiation-transmissive material such as Sili ^¬ kon or an epoxy material, in which, in contrast to conversion elements no fluorescent particles are contained, and dried prior to patterning or be cured. Alternatively, it is conceivable that the output layer and thus also the layer formed by patterning elements of the output layer have a different strah ^¬ lung permeable material, for example a glass material.

Although the invention has been further illustrated and described in detail by way of preferred embodiments, the invention is not limited by the disclosed examples, and other variations can be derived therefrom by those skilled in the art without departing from the scope of the invention.

Reference sign list

100, 101 conversion element

102 conversion element 105 recess

110 output layer

115 recess

120 printing form

121 Permeable area 125 Impermeable area

131, 132 dividing line

150 semiconductor chip

155 contact

160 component

161 carriers

165 bonding wire

Claims

Patent claims

1. Method for producing a layer element (100, 101, 102) for an optoelectronic semiconductor chip (150), comprising the method steps:

Providing an output layer (110), the output layer (110) having a recess (115); and

Structuring the starting layer (110) to form the layer element (100, 101, 102), the layer ^element (100, 101, 102) having a recess (105) which at least partially consists of the recess (115) of the starting layer ( 110) is formed.

2. Method according to claim 1,

wherein structuring the initial layer (110) includes cutting the initial layer (110) along dividing lines (131, 132) that run perpendicular to one another.

3. The method according to any one of the preceding claims, wherein the structuring of the initial layer (110) is carried out in such a way that a plurality of layer elements (100, 101, 102) are formed, which have a recess (105), and wherein the recesses (105) have several Layer elements (100, 101, 102) are formed from the recess (115) of the starting layer (110).

4. Method according to one of the preceding claims,

wherein the starting layer (110) has a plurality of recesses (115), and the structuring of the ^starting layer (110) is carried out in such a way that ^several layer elements (100, 101, 102) are formed, each ^of which has at least one Part made from a ^{corresponding} recess (115) in the starting layer (110). have formed recess (105).

Method according to one of the preceding claims, wherein the starting layer (110) has a plurality of recesses (115), and wherein the structuring of the starting ^layer (110) is carried out in such a way that the or a layer element (101, 102) has two recesses (105). which are each at least partially formed from a corresponding recess (115) in the starting layer (110).

Method according to one of the preceding claims, wherein the layer element (100, 101, 102) is a ^conversion element, and wherein the starting layer (110) has a conversion material.

Method according to claim 6,

wherein the starting layer (110) has a base material, in ^particular silicone, in which the conversion material is contained.

Method according to one of the preceding claims, wherein the provision of the starting layer (110) having the recess (115) is carried out with the aid of a printing ^process .

Method according to claim 8,

wherein the printing process is a screen printing process or a stencil printing process.

10. Method according to one of claims 8 or 9,

wherein the printed starting layer is hardened ^before structuring.

Method according to one of the preceding claims, wherein structuring the starting layer (110) involves carrying out a sawing process or a cutting process process includes.

Method for producing an optoelectronic component (160), wherein a layer element (100, 101, 102) is produced by carrying out a method according to one of the preceding claims and is subsequently arranged on an optoelectronic semiconductor chip (150).