WO2015071305A1

WO2015071305A1 - Laser component and method for the production thereof

Info

Publication number: WO2015071305A1
Application number: PCT/EP2014/074370
Authority: WO
Inventors: Matthias Knoerr; Gerhard Holzapfel; Markus Horn
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2013-11-13
Filing date: 2014-11-12
Publication date: 2015-05-21
Also published as: DE102013223115A1

Abstract

A laser component comprises a laser chip (200) with an emission face (201) and a carrier with an upper side (120) and an end side (110) oriented perpendicularly with respect to the upper side. The laser chip is arranged on the upper side of the carrier. The carrier has a cutout (140), which extends over the entire width of the end side, in a junction region between the upper side and the end side. The emission face of the laser chip projects at least partially beyond the cutout. As a result, a distance between the laser chip and the carrier is produced in the surroundings of the emission face, with the result that shadowing of a laser beam emitted at the emission face of the laser chip can be prevented. The cutout has a metallized area (170) which can be wetted by solder, as a result of which a penetration of solder to the emission face can be prevented.

Description

description

The present invention relates to a laser component according to claim 1 and to a method for producing a laser component according to claim 9.

This patent application claims the priority of German Patent Application DE 10 2013 223 115.6, the disclosure of which is hereby incorporated by reference.

Laser devices with semiconductor laser chips are well known in the art. It is customary to arrange the laser chip on a carrier which serves for the electrical contacting of the laser chip and for the dissipation of waste heat from the laser chip. In known laser chips, an active region of the laser chip is arranged closer to an upper side than to a lower side of the laser chip. Usually, the laser chip is arranged on the carrier such that the underside of the laser chip faces the carrier. An An ^¬ order of the laser chip with the carrier facing top would allow an improved dissipation of waste heat from the laser ^¬ chip. However, there is the danger in this arrangement of shading a laser facet of the laser chip in the active region or contamination of the laser facet in the active region with solder.

An object of the present invention is to provide a laser device. This object is achieved by a laser component with the features of claim 1. Another object of the present invention is as ^¬ rin to provide a method of manufacturing a laser device. This object is achieved by a method with the features of claim 9. In the dependent claims various developments are given. A laser device comprises a laser chip having a TERMS ^¬ onsfacette and a carrier having a top surface and a vertically oriented toward the top end side. The laser chip ^¬ is arranged on the upper side of the carrier. The carrier has in a transition region between the top and the end face on a recess which extends over the entire width of the end face. The Emissionsfa ^¬ cette of the laser chip is at least partially over the recess. Advantageously, in the case of this laser component, the recess results in the transitional region between the

Top side and the end face of the carrier in the region of the Emis ^¬ sion facet of the laser chip, a distance between the laser ^¬ chip and the top of the carrier. Thus, a shading of light emitted at the emission facet of the laser chip laser beam is prevented vorteilhaf ^¬ ingly. The resultant through the recess in the transition region between the top and the end of the carrier spacing Zvi ^¬ rule the laser chip and the carrier in the field of emission facet of the laser chip also prevents contamination of the emission facet of the laser chip with solder or other Ver ^¬ bonding material.

In one embodiment of the laser component, the Ausspa ^¬ tion is formed as a chamfer. Advantageously, the recess can thereby create particularly easy.

In another embodiment of the laser component, the recess is formed as a step. Advantageously, the recess can also be produced easily in this variant.

In one embodiment of the laser device has the off ^¬ savings in the direction perpendicular to the end face a depth Zvi ^¬ rule 10 ym and 100 ym on. Such a depth has proven to be sufficient to prevent shading and contamina ^¬ tion of the emission facet of the laser chip of the laser device. The recess has a metallization. Advantageously, the recess in the transition region between the top and the front side of the carrier can be wetted by the Metalli ^¬ tion of solder, whereby a penetration of solder to the emission facet of the laser chip of the laser device can be prevented. The metallization of the recess of the carrier of the laser component leads to the connection of the laser ^{chip ¬} with the carrier used Lot thus away from the zu ^¬ zuenden emission facet of the laser chip.

In one embodiment of the laser device has the Trä ^¬ ger a ceramic material. Advantageously, the support of the laser device can be electrically isolie ^¬ formed rend and good thermal conductivity in this case.

In one embodiment of the laser device, the Emis ^¬ sionsfacette of the laser chip does not protrude beyond the face of the wearer. Advantageously, the emission facet is thereby protected against mechanical damage. The arrangement of the emission facet of the laser chip that does not protrude beyond the end face of the carrier is advantageously made possible by the fact that the emission facet of the laser chip is already protected from contamination and shading by the recess provided on the carrier. As a result, a projection of the emission facet of the laser chip over the front side of the carrier in this laser device is not required.

In one embodiment of the laser device, the laser serchip a top and a top surface of the gegenüberlie ^¬ constricting underside. An active region of the laser chip is positioned closer to the top than at the bottom ^¬ page. The top of the laser chip faces the top of the carrier. Advantageously, this arrangement of the laser chip on the carrier of the laser component enables effective dissipation of waste heat accumulating in the laser chip during operation of the laser component. In the active area of the laser Chips generated waste heat has to overcome only the small Ab ^¬ stand between the active region of the laser chip and the top of the laser chip. In one embodiment of the laser device is a p-doped region of the laser chip to the top of the laser chips ^¬ borders. Advantageously, the laser chip can thereby be produced by growing on an n-doped substrate. A method of manufacturing a laser device comprises a step of providing a backing having a top and a vertically oriented to the top end ^¬ page, wherein the support has in a transition region between the top and the end face of a recess, which extends over the entire width of the front face extends, and a step for arranging a laser chip on the upper side of the carrier such that an emission facet of the La ^¬ serchips at least partially beyond the recess. Advantageously, in this method, only one overall rings risk that the emission facet of the laser chip ^¬ of positioning of the laser chip is contaminated at the top of Trä ^¬ gers by solder currency rend. This is achieved that is given by the provided in the transition region between the top and the end of the carrier recess a distance between the laser chip and the top of Trä ^¬ gers in the area of the emission facet. By this Ab ^¬ stand advantageously also reduces the risk of shading a laser beam emitted by the laser chip by the carrier.

In one embodiment of the method the providing ^¬ comprising provide the wearer steps of providing a support plate having a surface for applying a trench on the surface, and for dividing the carrier plate along a plane which is oriented perpendicular to the surface and through the base of the trench runs to obtain at least two carriers. Advantageously, this method enables a simple and inexpensive production of the carrier. This results in particular from the fact that the method allows a pa ^¬ rallele producing a plurality of carriers in common steps.

In one embodiment of the method, the trench is applied with a V-shaped cross-section. The process made ^¬ light thereby producing a support having an opening formed as a bevel recess in a transition area between a top and a front side of the carrier.

In one embodiment of the method, prior to dicing the carrier plate, a further step is performed for placing the metallization in the trench. Advantageously, the metallization can thereby be provided in a simple and cost-effective manner at a plurality of carriers at the same time. The metallization may advantageously be applied simultaneously with a metallization on the surface of the carrier plate. The above-described characteristics, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understood in connection with the following description of the embodiments, which will be described in detail in conjunction with the drawings. In each case show in a schematic representation

Figure 1 is a perspective view of a carrier; Figure 2 is a plan view of a first laser device with the carrier and a laser chip;

Figure 3 is a sectional side view of the first laser ^¬ device;

Figure 4 is a sectional side view of a carrier plate for the preparation of the carrier; and Figure 5 is a perspective view of another Trä ^¬ gers.

Figure 1 shows a schematic perspective view of a carrier 100 of a first laser device 10. The Trä ^¬ ger 100 may also be referred to as submount. The carrier 100 is intended to carry a laser chip (not shown in FIG. 1) of the first laser component 10, to provide electrical contacts for electrical contacting of the laser chip and to serve as a heat sink for dissipating waste heat produced in the laser chip.

The carrier 100 is formed as a substantially cuboid Plätt ^¬ Chen and may for example comprise a ceramic ma- TERIAL. The carrier 100 has a front side 110 and a to the end face 110 substantially perpendicular orien ^¬ oriented top 120. In parallel to the end face 110 and the upper ^¬ side 120 direction, the carrier 100 has a width 111.

A transition region 130 between the end face 110 and the upper side 120 of the carrier 100 is not formed as a rectangular edge, as would be the case with a complete cuboid ^¬ form of the carrier 100. Instead, the carrier 100 has a recess 140 in the transition region 130 between the end face 110 and the upper side 120. From the saving ^¬ 140 extends across the entire width 111 of the carrier 100. The recess 140 is formed as a chamfer. Thus ^¬ with the transition between the end face 110 and the top 120 of the carrier 100 is chamfered. Instead of a right-angled edge ^¬ two obtuse-angled edges with a ^¬ as arranged between tapered portion are provided. The bevelled area may, for example, have an angle of approximately 45 ° with respect to the front side 110 and the upper side 120. The beveled portion of the recess 140 may also be arranged steeper or flatter. In the direction of the end face 110 of the carrier 100 and parallel to the top 120 of the carrier 100 direction has the recess 140 a depth 141 on. The depth 141 is preferably Zvi ^¬ rule 10 ym and 100 ym.

On the upper side 120 of the carrier 100, a first metallization 150 is arranged. The first metallization 150 preferably completely covers the upper side 120 of the carrier 100. ^¬ additionally to 120 of the carrier is in a laser chip-receiving portion 161 of the top 100 and ^¬ rich in a protective chip Aufnahmebe 162 of the top 120 of the carrier 100, a second metal metallization disposed 160th The second metallization 160 is preferably arranged above the first metallization 150 in the laser chip receptacle area 161 and in the protective chip receptacle area 162. However, the first metallization 150 may also have recesses in the laser chip receptacle area 161 and the protective chip receptacle area 162 in which the second metallization 160 is arranged. The second metallization 160 comprises a metal suitable for making solder joints. The second metallization 160 may comprise a different metal than the first metallization 150.

The laser chip receiving area 161 is provided for receiving a laser chip. The protection chip-receiving portion 162 is for receiving a protection chips, such as a protective diode is provided, which serves to protect the laser chip of the first laser device 10 from being damaged by electrostatically ^¬ diagram discharges. However, the protective chip receiving region 162 and the protective chip can also be omitted. The laser chip receiving region 161 and the protective chip receiving region 162 preferably both directly adjoin the recess 140 in the transition region 130 between the upper side 120 and the front side 110 of the carrier 100.

At the recess 140 in the transition region 130 between the top 120 and the end face 110 of the carrier 100, a third metallization 170 is arranged. The third metallization ^¬ tion 170 covers the tapered surface of the recess 140 in the transition region 130. The third metallization 170 may extend over the entire width 111 of the recess 140 erstre ^¬ ck. However, the third metallization 170 may also be arranged only in the parts of the recess 140 adjoining the laser chip receptacle area 161 and the protective chip receptacle area 162. The third metallization 170 preferably comprises the same material as the second Metalli ^¬ tion 160th

FIG. 2 shows a schematic plan view of the first laser component 10. FIG. 3 shows a schematic sectional view

Side view of the first laser device 10. In the depicting ^¬ lungs of Figures 2 and 3, a laser chip 200 of the first laser device 10 is shown. The laser chip 200 is formed as a semiconductor-based laser diode made ^¬ and has a top surface 220, a top 220 of the opposite bottom side 230 and a oriented perpendicular to the top side 220 and bottom 230 ^¬ emission facet 210. The emission facet 210 can also be referred to as a laser facet.

The laser chip 200 has a p-doped region 240 and an n-doped region 260. In the example shown in FIGS. 2 and 3, the p-doped region 240 adjoins the upper side 220 of the laser chip 200. The n-doped region 260 adjoins the underside 230 of the laser chip 200. However, it is also possible to form the p-doped region 240 on the underside 230 and the n-doped region 260 adjacent to the upper side 220 of the laser chip 200.

Between the p-doped region 240 and the n-doped region 260, an active region 250 of the laser chip 200 is arranged on ^¬ . The active region 250 is a laser-active region of the laser chip 200. The active region 250 is arranged closer to the upper side 220 than to the lower side 230 of the laser chip 200. The laser chip 200 is designed to emit a laser beam in a direction substantially perpendicular to the emission ^facet 210 on the emission ^cassette 210 at a position adjacent to the active region 250. The emission region on the emission facet 210 of the laser chip 200 is thus arranged closer to the upper side 220 than to the underside 230 of the laser chip 200. The laser beam emitted by the laser chip 200 at the emission facet 210 is radiated with a characteristic beam divergence.

The laser chip 200 has a first electrical contact surface and a second electrical contact surface, which are seen before ^¬ to apply an electrical voltage to the laser chip 200. The first electrical contact surface of the laser chip 200 may, for example, on the upper side 220 of the laser chip

200 may be arranged. The second electrical contact surface of the laser chip 200 may be arranged, for example, on the underside 230 of the laser chip 200. The laser chip 200 is arranged in the laser chip receiving region 161 on the upper side 120 of the carrier 100 on the second metallization 160. In this case, the upper side 220 of the laser chip 200 faces the upper side 120 of the carrier 100. It would ^¬ al lerdings also possible to arrange the laser chip 200 in such a manner at the top 120 of the carrier 100 that the bottom 230 of the laser chip 200 of the top 120 of the carrier 100 is supplied ^¬ Wandt.

The laser chip 200 is connected by means of bonding material of an electrically conducting encryption with the second metallization 160 La ^¬ serchip receiving portion 161 at the top 120 of the carrier 100th As a result, there is an electrically conductive connection between the second metallization 160 in the laser chip receiving region 161 of the carrier 100 and the first electrical contact surface of the laser chip 200 arranged on the upper side 220 of the laser chip 200. The connecting material may be, for example, a solder, an electrically conductive adhesive or the like to be a sintered paste. Which is arranged at the bottom 230 of the laser chip 200 second electrical contact area of the laser chip 200 may be connected to a further metallization at ^¬ play, not shown in Figures 2 and 3 bonding wires.

The emission facet 210 of the laser chip 200 is oriented parallel to the end face 110 of the carrier 100 in Wesentli ^¬ chen. The laser chip 200 is in the transition region 130 via the recess 140 via. Thus, 220 of the laser chip 200 is formed a gap between the upper ^¬ page 220 and the carrier 100 through the recess 140 in a region adjacent to the emission facet 210 of the upper ^¬ page. The emission facet 210 preferably does not overlap the end face 110 of the carrier 100, but lies in a common plane with the carrier

End face 110 of the carrier 100 or is set back relative to the front ^¬ side 110 of the carrier 100. The projection of the laser chip 200 via the recess 140 in the transition region 130 is in the direction perpendicular to the emission facet 210 of the laser chip 200 and the end face 110 of the carrier 100 before ^¬ given to at most as large as the depth 141 of the recess 140th

The projection of the part of the laser chip 200 adjoining the emission facet 210 of the laser chip 200 via the recess 140 in the transition region 130 prevents a laser beam emitted at the emission facet 210 near the top 220 of the laser chip 200 from being shaded by the carrier 100. The supernatant of the laser chip 200 through the recess 140 of the carrier 100 prevents such From ^¬ shading, despite the divergence of the light emitted at the emission facet 210 laser beam, despite the proximity of the active region 250 to the top 220 of the laser chip 200 and thus to the upper ^¬ page 120 of Support 100 and also in the case of a relative to the end face 110 of the carrier 100 set back arrangement of the emission facet 210 of the laser chip 200th By the protrusion of the angren ^¬ collapsing to the emission facet 210 portion of the laser chip 200 through the recess 140 in the transition area 130 of the carrier 100, contamination of the emission facet 210 is prevented to that used for fastening the laser chip 200 on the top 120 of the carrier 100 connecting material , Connecting material arranged between the upper side 220 of the laser chip 200 and the second metallization 160 in the laser chip receiving area 161 on the upper side 120 of the carrier 100 can wet the third metallization 170 at the recess 140 and is thereby propagated away from the emission facet 210 of the laser chip 200. This prevents that excess compound mate rial ^¬ passes before the emission facet 210 of the laser chip 200 and there causes a short circuit or shades the serchip by the laser 200 emitted laser beam.

Since the emission facet 210 of the laser chip 200 does not protrude beyond the end face 110 of the carrier 100, the laser chip 200 is protected against damage by external mechanical influences. The carrier 100 protects the La ^¬ serchip 200 from accidental damage during handling of the first laser device 10 Example ^¬, during an assembly of the first laser device 10. For the production of the first laser device 10, first, the carrier 100 with the in the transition area 130 between the End face 110 and the top 120 formed recess 140 is provided. Subsequently, the laser chip 200 is arranged in the described manner in the laser chip receiving area 161 on the upper side 120 of the carrier 100.

FIG. 4 shows a diagrammatic cross-sectional side view illustrating a possibility for producing the carrier 100 with the recess 140 formed in the transition region 130. FIG. 4 shows a section through a carrier plate 300. The carrier plate 300 has the same material as the carrier 100 support plate 300 is formed as in Wesentli ^¬ chen flat plate having a surface 320th The Support plate 300 is provided for the production of at least two Trä ^¬ like 100.

In a first processing step, a trench 330 is applied to the surface 320 of the carrier plate 300. The trench 330 is applied essentially rectilinearly and has a cross section 332 oriented perpendicular to the direction of extension of the trench 330, which is approximately triangular or V-shaped. In the direction parallel to the surface 320 of the carrier plate 300 and perpendicular to the direction of elongation of the trench 330, the trench 330 has a trench width 331. The trench width 331 is selected approximately twice as large as the desired depth 141 of the recess 140 on the carrier 100.

Subsequently, the first metallization 150, the second metallization 160 and the third metallization 170 are applied to the surface 320 of the carrier plate 300. In the

4, only the second metallization 160 and the third metallization 170 can be seen. The second metallization 160 extends in sections of the surface 320 of the carrier plate 300 outside the trench 330. The third metallization 170 is arranged in the region of the trench 330 on the surface 320 of the carrier plate 300. If for the second metallization 160 and the third metal ^¬ capitalization 170 uses the same material as the second metallization blank 160 and applying the third metallization ^¬ tion 170 in a particularly simple manner in a common step.

In a subsequent processing step, the carrier plate 300 is divided at a parting plane 310 in order to obtain at least two carriers 100. The parting plane 310 is oriented perpendicular to the surface 320 of the support plate 300 and extends parallel to the longitudinal extension direction of the trench 330 through the bottom of the trench 330. The cutting of the support plate 300 at the parting plane 310 can be done, for example, by sawing. In the space formed by separating the support plate 300 at the separating plane 310 depending on at least two supports 100 ^¬ weils one half of the trench 330 forms the recess 140. The end faces 110 of the at least two carriers 100 are formed at the parting plane 310th The surface 320 of the carrier plate 300 forms the upper sides 120 of the at least two carriers 100.

The support plate 300 may in addition to the division of the

Dividing plane 310 are divided at further to the longitudinal direction of the trench 330 perpendicular planes to form a larger number ^¬ of carriers 100 from the support plate 300. Thus, the method described advantageously ^¬ example enables cost parallel production of a large number of carriers 100 in a common operation.

Figure 5 shows a schematic perspective view of a support 1000 of a second laser device 20. The second laser device 20 and its support 1000 have large similarities with the first laser device 10 and the support 100 on ^¬ sen. Corresponding components are provided in gur 5 Fi ^¬ by the same reference numerals as in Figures 1 to 4 and subsequently in detail again not be ^¬ written.

The support 1000 of the second laser device 20 has Un ^¬ terschied to the carrier 100 of the first laser device 10 in the transition area 130 between the end face 110 and the top surface 120 instead of the recess 140 a recess 1140th The recess 1140 of the carrier 1000 is not formed as a chamfer but as a step. The recess 1140 of the carrier 1000 extends like the recess 140 of Trä ^¬ gers 100 over the entire width 111 of the carrier 1000. The recess 1140 can be used as a rectangular step with two

Be formed surfaces. An area parallel to the upper side 120 of the carrier 1000 and designed as a right-angled step. th recess 1140 is offset from the top 120 down and has the depth 141. A parallel to the end face 110 of the carrier 1000 surface of the formed as a right-angled step recess 1140 is set back relative to the front side 110 by the depth 141.

The recess 1140 of the carrier 1000 also has a third metallization 170. The third metallization 170 preferably extends over both surfaces of the recess 1140 formed as a step, but at least over the surface adjoining the upper side 120 of the carrier.

Also, in the second laser device 20 of the laser chip 200 through the recess 1140 on standing in the laser chip Aufnah- mebereich 161 at the top 120 of the carrier 1000 angeord ^¬ net. This arrangement offers the same advantages in the second laser device 20 as in the first laser device 10.

The carrier 1000 of the second laser component 20 can be produced in a manner analogous to the production of the carrier 100 of the first laser component 10. In this case, the trench 330 is applied to the surface 320 of the support plate 300, however, with egg ^¬ nem cross section 332, which is not triangular relationship ^¬ V-shaped, but rectangular.

The invention has been further illustrated and described with reference to the preferred Ausführungsbei ^¬ games. However, the invention is not limited to the disclosed examples. On the contrary, other variations can be derived by the person skilled in the art without departing from the scope of the invention. , _c

15

Reference sign list

10 first laser device

20 second laser device

100 carriers

110 front side

111 width

120 top

130 transition area

140 recess

141 depth

150 first metallization

160 second metallization 161 laser chip pickup area

162 protective chip receiving area

170 third metallization

200 laser chip

210 emission facet

220 top

230 bottom

240 p-doped region

250 active area

260 n-doped region

300 carrier plate

310 parting plane

320 surface

330 ditch

331 trench width

332 cross section

1000 carriers

1140 recess

Claims

claims

1. laser component (10, 20)

with a laser chip (200) with an emission facet (210)

and a carrier (100, 1000) having an upper side (120) and an end face (110) oriented perpendicular to the upper side (120),

wherein the laser chip (200) is arranged on the upper side (120) of the carrier (100, 1000),

wherein the carrier (100, 1000) in a transition region (130) between the top (120) and the end face (110) has a recess (140, 1140) which extends over the entire width (111) of the end face (110) wherein the emission facet (210) of the laser chip (200) is at ^¬ least partially over the recess (140, 1140) via ^¬,

wherein the recess (140, 1140) has a metallization (160).

2. Laser component (10) according to claim 1,

wherein the recess (140) is formed as a chamfer.

3. laser component (20) according to claim 1,

wherein the recess (1140) is formed as a step.

4. laser component (10, 20) according to one of the preceding claims,

wherein the recess (140, 1140) in the direction perpendicular to the end face (110) has a depth (141) between 10 ym and

100 ym.

5. laser component (10, 20) according to one of the preceding claims,

wherein the carrier (100, 1000) comprises a ceramic material. Laser component (10, 20) according to one of the preceding claims,

wherein the emission facet (210) of the laser chip (200) does not project beyond the end face (110) of the carrier (100, 1000).

Laser component (10, 20) according to one of the preceding claims,

wherein the laser chip (200) has an upper side (120) and a lower side (230) opposite the upper side (220),

wherein an active area of the laser chip (200) is located closer to the top (220) than to the bottom (230),

wherein the upper side (220) is the carrier (100, 1000) zuge¬ ^wandt .

Laser component (10, 20) according to claim 7,

wherein a p-doped region (240) of the laser chip (200) is adjacent to the top surface (220) of the laser chip (200).

Method for producing a laser component (10, 20) with the following steps:

- providing a carrier (100, 1000) having a top side ^¬ (120) and a perpendicular to the top surface (120) ori ^¬ oriented end face (110)

wherein the carrier (100, 1000) in a transition region (130) between the top (120) and the end face (110) has a recess (140, 1140) which extends over the entire width (111) of the end face (110) wherein the recess (140, 1140) has a metallization (160);

- Arranging a laser chip (200) on the upper side (120) of the carrier (100) such that an emission facet (210) of the laser chip (200) at least partially beyond the recess (140, 1140) protrudes.

10. The method according to claim 9,

wherein providing the carrier (100, 1000) comprises the fol ^¬ constricting steps of:

- providing a carrier plate (300) having a surface (320);

- applying a trench (330) to the surface (320);

- cutting the carrier plate (300) along a plane (310) perpendicular to the surface (320) is oriented and through the bottom of the trench (330) extends to obtain min ^¬ least two carriers (100, 1000).

11. The method according to claim 10,

wherein the trench (330) is applied with a V-shaped cross-section (332).

12. The method according to any one of claims 10 and 11,

wherein, before cutting the support plate (300) is carried out of the fol ^¬ constricting further step of:

- placing the metallization (160) in the trench (330).