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WO2015057051A1 - Sputtering high throughput aluminum film - Google Patents

Sputtering high throughput aluminum film Download PDF

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Publication number
WO2015057051A1
WO2015057051A1 PCT/MY2014/000123 MY2014000123W WO2015057051A1 WO 2015057051 A1 WO2015057051 A1 WO 2015057051A1 MY 2014000123 W MY2014000123 W MY 2014000123W WO 2015057051 A1 WO2015057051 A1 WO 2015057051A1
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WO
WIPO (PCT)
Prior art keywords
metal substrate
power
seem
sputtering
gas
Prior art date
Application number
PCT/MY2014/000123
Other languages
French (fr)
Inventor
Razali Mohd Nor NIK MOHD
Syarina Md Yakin FIRZALAILA
Mohamad Badarudin SITI AISHAH
Bt. Tajudin HARNISAH
Bte Osman NOR AISHAH
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Publication of WO2015057051A1 publication Critical patent/WO2015057051A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Definitions

  • the present invention relates to a method of increasing throughput speed to improve circuit operation while maintaining the grain growth in deposition.
  • Semiconductor chips have several layers of metal, which provides interconnection between various portions of the chip.
  • the circuit operation between various portions of the semiconductor chip can be improved by high voltage device and using very thick metal layer.
  • a major disadvantage associated with the thick metal layer is the throughput speed with which the thick metal can be deposited. Only a few wafers can be processed at a time and significantly, more time is taken for the thick deposition step resulting in a heavy throughput loss.
  • the throughput speed can be increased by increasing sputtering rate by supplying higher Direct Current (DC) power.
  • DC Direct Current
  • the increase in DC power may result in affecting the grain growth of Aluminum-Copper (Al-Cu) film.
  • An embodiment of the invention discloses a method of sputtering a high throughput thick aluminium film with a controlled grain size wherein a metal substrate is identified.
  • the metal substrate thus identified is transferred into a first deposition chamber.
  • sputtering of Al-Cu is initiated thereby forming a layer on said metal substrate by increasing DC power.
  • Al-Cu sputtered metal substrate is introduced into an environment of inert gas, which acts as cooling agent.
  • the cooled metal substrate is re- transfered into a second deposition chamber for quoting second layer of Al-Cu layer thereby converting the sputtered metal substrate into a thick aluminium film with controlled grain size .
  • the metal substrate is made up of alloys of titanium, tungsten, aluminium, copper or any of its family. Further, DC power used for initiating sputtering may range between lOkW to 20kW.
  • the inert gas is argon.
  • the flow rate of argon in an embodiment of the invention ranges between 5-60sccm.
  • the thickness of fist deposited layer is 40-50% of the total thickness of thick aluminium film.
  • the thickness of aluminium film ranges between l-4pm.
  • the sputtering chamber is performed using a single or dual chamber.
  • Figure 1 discloses a flow process of aluminum deposition in a single chamber in an embodiment of the invention.
  • Figure 2 of the invention discloses a schematic construction of a sputtering apparatus of an embodiment of the invention.
  • Figure 3 of the invention discloses a schematic representation of an apparatus for carrying out the invention.
  • Figure 4 of the invention discloses a diagram of aluminum deposition of 40kA Al-Cu of an embodiment of the invention.
  • Figure 5a - 5b illustrates grain size measurement for AlCu 40 kA with different DC power without Argon gas at "Cooling" step.
  • Figure 1 discloses a flow process of aluminum deposition in a single chamber in an embodiment of the invention.
  • very thick metal is desirable.
  • the thick metal can be obtained through continuous processing of wafers.
  • the throughput speed plays a vital role in processing the wafers, as a low throughput speed may lead to longer deposition time.
  • the higher throughput can be achieved by increasing the DC power, however, it can affect the grain size on the Al-Cu film.
  • the grain size growths need to be controlled because metal grain sizes may impact the metal pattern and metal etch.
  • the flow process can be divided into two phases.
  • the DC power of the system is increased thereby there is a significant increase in the sputtering rate and as a result, a thick layer of Al-Cu is deposited (110) .
  • High sputter rate will cause the wafer temperature to be higher during the deposition.
  • the first thick layer of Al-Cu is deposited in single chamber (120) , which is allowed to be cooled. As the wafer temperature increases, the Al-Cu grain size will increase too.
  • front side gas — Argon AO gas is introduced at "Cooling" step in between first and second deposition process (130) .
  • This gas will contribute to heat dissipation and will reduce the wafer temperature after the first deposition step thereby reducing the wafer temperature and restrain the growth of grain size.
  • the cooling process of first deposition layer is followed by second sputtering of a thick layer of Al-Cu (140) .
  • FIG. 2 of the invention discloses a schematic construction of a sputtering apparatus of an embodiment of the invention.
  • Al-Cu is commonly used as interconnect material in the semiconductor industry.
  • One of the methods to deposit AI-Cu is using physical vapor deposition (PVD) .
  • PVD physical vapor deposition
  • a cathode (210) and an anode (220) are placed in a vacuum chamber (230) . Between the electrodes a voltage is applied to create an electron stream. After generation of electron stream, argon is added in the vacuum chamber. The electrons generated inside the chamber collide with the argon and create positively charged argon ions. The positively charged argon ions are strongly attracted to the target (240) , which is placed on the negatively charged cathode (210) .
  • the Argon ions collide with the target surface, dislodging (sputtering) metal atoms.
  • the collision also produces secondary electrons that sustain the plasma discharge.
  • the sputtered atoms travel across to the substrate (wafer) and deposit as a film. This process generates more heat after first deposition step, causing the wafer temperature to be higher compare to deposit with lower DC power. As the wafer temperature is higher after first 'deposition, the AI-Cu grain size will increased too due to higher wafer temperature during second deposition.
  • Table 1 as shown below depicts the grain size measurement of higher DC power as compared with the lower DC power.
  • Table 1 Grain size measurement for AlCu 40 kA with different DC power without Argon gas at "Cooling" step
  • Table 2 as depicted below represents recipe parameters such as wafer positioning, stabilization, strike rate, cooling effect , pumping etc. at a lower DC power i.e. 10.6kW.
  • Table 3 as depicted below represents recipe parameters such a wafer positioning, stabilization, strike rate, cooling effect pumping etc. at a lower DC power i.e. 18k .
  • Figure 3 of the invention discloses a schematic representation of an apparatus for carrying out the invention.
  • the grain size growths need to be controlled because metal grain sizes will give impact to metal pattern and metal etch. Therefore, a single wafer is processed through the Al-Cu single chamber.
  • Figure 4 of the invention discloses a diagram of aluminum deposition of 40kA Al-Cu of an embodiment of the invention.
  • front side gas — Argon (Ar) gas is introduced at "Cooling" step in between first and second deposition process. This gas will contribute to heat dissipation and will reduce the wafer temperature after the first deposition step.
  • wafer positioning (410) is stabilized (420) , which is followed by striking (430) the wafer through Al-Cu sputtering thereby forming the first layer of deposition (440) .
  • the first layer of deposition is cooled (450) and later again get sputtered through Al-Cu deposition as second layer (460), after which the wafer is pumped (470) out.
  • Table 4 as depicted below represents grain size measurement of Al-Cu with and without Argon gas at cooling step.
  • Wafer DC Front Grain size measurement (urn 2 )
  • Table 5 as depicted below represents recipe parameters such as wafer positioning, stabilization, strike rate, cooling effect, pumping etc. for wafer with Argon gas at cooling step.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A method of sputtering a high throughput thick aluminium film with a controlled grain size is provided. The method includes transferring a metal substrate into a deposition chamber and initiating sputtering of Al-Cu layer on the metal substrate by increasing DC power. This is followed by cooling the Al-Cu sputtered metal substrate in an inert gas environment and re-transferring the cooled Al-Cu sputtered metal substrate into another deposition chamber for coating another Al-Cu layer for converting the sputtered metal substrate into a thick aluminium film in which the grain size is controlled.

Description

SPUTTERING HIGH THROUGHPUT ALUMINUM FILM
Field of Invention
The present invention relates to a method of increasing throughput speed to improve circuit operation while maintaining the grain growth in deposition.
Background of the Invention
Semiconductor chips have several layers of metal, which provides interconnection between various portions of the chip. The circuit operation between various portions of the semiconductor chip can be improved by high voltage device and using very thick metal layer. A major disadvantage associated with the thick metal layer is the throughput speed with which the thick metal can be deposited. Only a few wafers can be processed at a time and significantly, more time is taken for the thick deposition step resulting in a heavy throughput loss. The throughput speed can be increased by increasing sputtering rate by supplying higher Direct Current (DC) power. However, the increase in DC power may result in affecting the grain growth of Aluminum-Copper (Al-Cu) film. Due to higher DC power the sputtered atoms are deposited in shorter time, the process induces more heat thereby causing wafer temperature to be higher after first deposition. As a result, Al-Cu grain growth may vary drastically within two depositions. It is observed that grain size is bigger than desirable size, which can create issued with the quality of the metal thus obtained. With a very thick metal layer, the metal grains are often abnormal, which results in loss of yield due to abnormal grain growth. Additionally, with the passage of time the deposition process may vary, which leads to a bad grain structure compared to other portions in the metal layer potentially causing lower conductivity or, in worst cases, potential failure of the circuit during operation. The grain size growths need to be controlled because metal grain sizes will give impact during metal pattern and metal etch, which leads to several disadvantages. As the deposited metal becomes taller on the wafer, defects begin to increase in various parts of the final circuit, which becomes a major disadvantage.
Another disadvantage being, the increase in the thermal budget of the chip during deposition of a thick metal layer which causes many portions of the chip to be subjected to a higher temperature for longer periods of time than is preferred. To overcome the disadvantages as discussed above and several others, a new method is required to fulfill both the throughput and grain size requirement. Summary of the Invention
An embodiment of the invention discloses a method of sputtering a high throughput thick aluminium film with a controlled grain size wherein a metal substrate is identified. The metal substrate thus identified is transferred into a first deposition chamber. In the first deposition chamber sputtering of Al-Cu is initiated thereby forming a layer on said metal substrate by increasing DC power. Thereafter, Al-Cu sputtered metal substrate is introduced into an environment of inert gas, which acts as cooling agent. The cooled metal substrate is re- transfered into a second deposition chamber for quoting second layer of Al-Cu layer thereby converting the sputtered metal substrate into a thick aluminium film with controlled grain size .
In another embodiment of the invention the metal substrate is made up of alloys of titanium, tungsten, aluminium, copper or any of its family. Further, DC power used for initiating sputtering may range between lOkW to 20kW.
In yet another embodiment of the invention, the inert gas is argon. Also, the flow rate of argon in an embodiment of the invention ranges between 5-60sccm. Further , the thickness of fist deposited layer is 40-50% of the total thickness of thick aluminium film. The thickness of aluminium film ranges between l-4pm. In an embodiment, the sputtering chamber is performed using a single or dual chamber. Brief Description of the Drawings
Figure 1 discloses a flow process of aluminum deposition in a single chamber in an embodiment of the invention.
Figure 2 of the invention discloses a schematic construction of a sputtering apparatus of an embodiment of the invention.
Figure 3 of the invention discloses a schematic representation of an apparatus for carrying out the invention. Figure 4 of the invention discloses a diagram of aluminum deposition of 40kA Al-Cu of an embodiment of the invention.
Figure 5a - 5b illustrates grain size measurement for AlCu 40 kA with different DC power without Argon gas at "Cooling" step.
Figure 6a - 6b illustrates grain size measurement for AlCu 40kA (DC power = 18.0kw) with and without Argon gas at "Cooling" step Detailed Description of the Preferred Embodiments
Figure 1 discloses a flow process of aluminum deposition in a single chamber in an embodiment of the invention. In order to improve the circuit operation of higher voltage device, very thick metal is desirable. The thick metal can be obtained through continuous processing of wafers. The throughput speed plays a vital role in processing the wafers, as a low throughput speed may lead to longer deposition time. The higher throughput can be achieved by increasing the DC power, however, it can affect the grain size on the Al-Cu film. The grain size growths need to be controlled because metal grain sizes may impact the metal pattern and metal etch. As depicted in the figure, the flow process can be divided into two phases. In the first phase, the DC power of the system is increased thereby there is a significant increase in the sputtering rate and as a result, a thick layer of Al-Cu is deposited (110) . High sputter rate will cause the wafer temperature to be higher during the deposition. The first thick layer of Al-Cu is deposited in single chamber (120) , which is allowed to be cooled. As the wafer temperature increases, the Al-Cu grain size will increase too. In order to suppress grain size growth at second deposition step, front side gas — Argon (AO gas is introduced at "Cooling" step in between first and second deposition process (130) . This gas will contribute to heat dissipation and will reduce the wafer temperature after the first deposition step thereby reducing the wafer temperature and restrain the growth of grain size. The cooling process of first deposition layer is followed by second sputtering of a thick layer of Al-Cu (140) .
Figure 2 of the invention discloses a schematic construction of a sputtering apparatus of an embodiment of the invention. Al-Cu is commonly used as interconnect material in the semiconductor industry. One of the methods to deposit AI-Cu is using physical vapor deposition (PVD) . As depicted in the schematic construction, a cathode (210) and an anode (220) are placed in a vacuum chamber (230) . Between the electrodes a voltage is applied to create an electron stream. After generation of electron stream, argon is added in the vacuum chamber. The electrons generated inside the chamber collide with the argon and create positively charged argon ions. The positively charged argon ions are strongly attracted to the target (240) , which is placed on the negatively charged cathode (210) . The Argon ions collide with the target surface, dislodging (sputtering) metal atoms.
The collision also produces secondary electrons that sustain the plasma discharge. The sputtered atoms travel across to the substrate (wafer) and deposit as a film. This process generates more heat after first deposition step, causing the wafer temperature to be higher compare to deposit with lower DC power. As the wafer temperature is higher after first 'deposition, the AI-Cu grain size will increased too due to higher wafer temperature during second deposition.
Table 1 as shown below depicts the grain size measurement of higher DC power as compared with the lower DC power.
Table 1 : Grain size measurement for AlCu 40 kA with different DC power without Argon gas at "Cooling" step
Figure imgf000009_0001
Table 2 as depicted below represents recipe parameters such as wafer positioning, stabilization, strike rate, cooling effect , pumping etc. at a lower DC power i.e. 10.6kW. Table 2 : Recipe parameters for wafer #1 - AlCu 40kA (DC power = 10.6kw)
Step # Step name Recipe Details
1 Wafer positioning Step time : 2 sec
DC power : 0 w
Front side gas : 0 seem
Backside gas : 0 seem
2 Stabilization Step time : 15 sec
DC power : 0 w
Front side gas : 28 seem
Backside gas : 7 seem
3 Strike Step time : 3 sec
DC power : 500 w
Front side gas : 28 seem
Backside gas : 5 seem
4 1st AlCu deposition Step time : 131.3 sec
~ 20kA DC power : 10600 w
Front side gas : 28 seem
Backside gas : 5 seem
5 Cooling Step time : 60 sec
DC power : 0 w
Front side gas : 0 seem
Backside gas : 0 seem
6 2nd AlCu deposition Step time :131.3 sec ~ 20 kA DC power : 10600 w
Front side gas : 28 seem
Backside gas : 5 seem
7 Pumping Step time : 10 sec
DC power : 0 w
Front side gas : 0 seem
Backside gas : 0 seem
Table 3 as depicted below represents recipe parameters such a wafer positioning, stabilization, strike rate, cooling effect pumping etc. at a lower DC power i.e. 18k .
Table 3: Recipe parameters for wafer #2 - AlCu 40kA (DC power 18.0kw)
Step # Step name Recipe Details
1 Wafer positioning Step time : 2 sec
DC power : 0 w
Front side gas : 0 seem
Backside gas : 0 seem
2 Stabilization Step time : 15 sec
DC power : 0 w
Front side gas : 28 seem
Backside gas : 7 seem
3 Strike Step time : 3 sec DC power : 500 w
Front side gas : 28 seem
Backside gas : 5 seem
4 1st AlCu deposition Step time : 99.6 sec
~ 20kA DC power : 18000 w
Front side gas : 28 seem
Backside gas : 5 seem
5 Cooling Step time : 60 sec
DC power : 0 w
Front side gas : 0 seem
Backside gas : 0 seem
6 2nd AlCu deposition Step time : 99.6 sec
~ 20 kA DC power : 18000 w
Front side gas : 28 seem
Backside gas : 5 seem
7 Pumping Step time : 10 sec
DC power : 0 w
Front side gas : 0 seem
Backside gas : 0 seem
Figure 3 of the invention discloses a schematic representation of an apparatus for carrying out the invention. The grain size growths need to be controlled because metal grain sizes will give impact to metal pattern and metal etch. Therefore, a single wafer is processed through the Al-Cu single chamber.
Figure 4 of the invention discloses a diagram of aluminum deposition of 40kA Al-Cu of an embodiment of the invention. In order to suppress grain size growth at second deposition step, front side gas — Argon (Ar) gas is introduced at "Cooling" step in between first and second deposition process. This gas will contribute to heat dissipation and will reduce the wafer temperature after the first deposition step. In the figure as depicted herein, after wafer positioning (410) is stabilized (420) , which is followed by striking (430) the wafer through Al-Cu sputtering thereby forming the first layer of deposition (440) . The first layer of deposition is cooled (450) and later again get sputtered through Al-Cu deposition as second layer (460), after which the wafer is pumped (470) out.
Table 4 as depicted below represents grain size measurement of Al-Cu with and without Argon gas at cooling step.
Table 4 : Grain size measurement for AlCu 40kA (DC power = 18.0kw) with and without Argon gas at "Cooling" step
Wafer DC Front Grain size measurement (urn2 )
# power side gas (kw) (seem)
2 18.0 0
Refer figure 6A
105.6 μηι2
3 18.0 60
Refer figure 6B
73.8 μιτι2
Table 5 as depicted below represents recipe parameters such as wafer positioning, stabilization, strike rate, cooling effect, pumping etc. for wafer with Argon gas at cooling step. Table 5: Recipe parameters for wafer #3 - AlCu 40kA (DC power =
18.0kw) with Argon gas at "Cooling" step
Step # Step name Recipe Details
1 Wafer positioning Step time : 2 sec
DC power : 0 w
Front side gas : 0 seem
Backside gas : 0 seem
2 Stabilization Step time : 15 sec
DC power : 0 w
Front side gas : 28 seem
Backside gas : 7 seem
3 Strike Step time : 3 sec
DC power : 500 w Front side gas : 28 seem
Backside gas : 5 seem
1st AlCu deposition ~ Step time : 99.6 sec 20kA DC power : 18000 w
Front side gas : 28 seem Backside gas : 5 seem
Cooling Step time : 60 sec
DC power : 0 w
(introduced Argon (Ar) Front side gas : 40 seem gas) Backside gas : 0 seem
2nd AlCu deposition ~ Step time : 99.6 sec 20 kA DC power : 18000 w
Front side gas : 28 seem Backside gas : 5 seem
Pumping Step time : 10 sec
DC power : 0 w
Front side gas : 0 seem
Backside gas : 0 seem

Claims

Claims :
1. A method of sputtering a high throughput thick aluminium film with a controlled grain size comprising:
a. sputtering (120) a first Al-Cu layer on a metal substrate in first deposition chamber by increasing DC power to obtain Al-Cu sputtered metal substrate; b. cooling (130) said Al-Cu sputtered metal substrate, c. transferring (140) the cooled Al-Cu sputtered metal substrate into a second deposition chamber for coating a second Al-Cu layer to obtain a sputtered metal substrate on thick aluminium film with controlled grain size.
2. The method of claim 1, wherein said Al-Cu sputtered metal substrate is cooled in any inert gas.
3. The method of claim 1, wherein the metal substrate is made up of alloys of aluminium.
4. The method of claim 1, wherein the DC power used for initiating sputtering may range between lOkW to 20k .
5. The method of claim 2, wherein inert gas is argon.
6. The method of claim 5, wherein the flow rate of argon ranges between 5-60sccm.
7. The method of claim 1, wherein the thickness of first layer is 40-50% of the total thickness of thick aluminium film.
8. The method of claim 1, wherein the thickness of aluminium film ranges between 1-4μπι.
9. The method of claim 1, wherein the sputtering is performed using a single chamber.
PCT/MY2014/000123 2013-10-17 2014-05-27 Sputtering high throughput aluminum film WO2015057051A1 (en)

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MYPI2013003797 2013-10-17

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109273350A (en) * 2018-09-11 2019-01-25 上海华虹宏力半导体制造有限公司 The manufacturing method of metallic film
CN117778975A (en) * 2023-12-27 2024-03-29 宁波永新光学股份有限公司 Inhibition method of columnar structure of metal transition layer in preparation of anti-abrasion coating

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429493B1 (en) * 1998-10-20 2002-08-06 Seiko Epson Corporation Semiconductor device and method for manufacturing semiconductor device
US20070037393A1 (en) * 2005-08-11 2007-02-15 Nien-Chung Chiang Process of physical vapor depositing mirror layer with improved reflectivity
US20070138001A1 (en) * 2005-12-19 2007-06-21 Teng-Yuan Ko Method of forming an inductor on a semiconductor substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429493B1 (en) * 1998-10-20 2002-08-06 Seiko Epson Corporation Semiconductor device and method for manufacturing semiconductor device
US20070037393A1 (en) * 2005-08-11 2007-02-15 Nien-Chung Chiang Process of physical vapor depositing mirror layer with improved reflectivity
US20070138001A1 (en) * 2005-12-19 2007-06-21 Teng-Yuan Ko Method of forming an inductor on a semiconductor substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109273350A (en) * 2018-09-11 2019-01-25 上海华虹宏力半导体制造有限公司 The manufacturing method of metallic film
CN109273350B (en) * 2018-09-11 2020-09-29 上海华虹宏力半导体制造有限公司 Method for producing metal thin film
CN117778975A (en) * 2023-12-27 2024-03-29 宁波永新光学股份有限公司 Inhibition method of columnar structure of metal transition layer in preparation of anti-abrasion coating

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