WO2014104913A1 - Module à diodes électroluminescentes - Google Patents
Module à diodes électroluminescentes Download PDFInfo
- Publication number
- WO2014104913A1 WO2014104913A1 PCT/RU2012/001127 RU2012001127W WO2014104913A1 WO 2014104913 A1 WO2014104913 A1 WO 2014104913A1 RU 2012001127 W RU2012001127 W RU 2012001127W WO 2014104913 A1 WO2014104913 A1 WO 2014104913A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- encapsulation
- light emitting
- semiconductor chips
- light
- module
- Prior art date
Links
- 238000005538 encapsulation Methods 0.000 claims abstract description 84
- 239000004065 semiconductor Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims description 25
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 101100034147 Dictyostelium discoideum iunH gene Proteins 0.000 claims 1
- 238000000605 extraction Methods 0.000 description 34
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- 229910052751 metal Inorganic materials 0.000 description 8
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- 239000000919 ceramic Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
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- 229920001296 polysiloxane Polymers 0.000 description 6
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- 229910002601 GaN Inorganic materials 0.000 description 3
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- 239000002241 glass-ceramic Substances 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- -1 gallium nitride GaN Chemical class 0.000 description 1
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- 230000001788 irregular Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
- G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
- G02B19/0066—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED in the form of an LED array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
Definitions
- the present invention relates generally to light sources based on light emitting semiconductor components, such as light emitting diodes LEDs, as the primary light emitting elements. More particularly, the present invention is related to light emitting modules having a plurality of semiconductorlight emitting chips arranged on a substrate plate. Typically, these kinds of modules are called chip-onboard (COB) light emitting modules. The invention is focused on the extraction of light from such modules.
- COB chip-onboard
- any light source such as an indoor luminary or, for example,, a headlight of a vehicle
- semiconductor light emitting elements like LEDs more and more . often replace the conventionally used incandescent and gas-discharge lamps as the primary light emitting component.
- Semiconductor light emitting components provide many superior characteristics, such as long-term stability, high power efficiency, and compact size of the single element.
- 3aMeHHioiuiiH JIHCT reflectors which redistribute light from the point source, thus transforming it into a beam with desired properties, are used.
- an array of multiple LEDs is used. While the former solution can be used in luminaries whose size and weight is typically not limited very strictly (e.g., in street lamps), whenever a compact (especially, thin and flat, as is the case of the majority of indoor lighting applications) light source module is required, an array of LEDs is the most practical choice.
- An array- of LEDs can be generally formed in two alternative ways: either through combining a number of individual LEDs, each of them being a complete separate component having its own substrate, electrical connections, optical system, packaging, etc., or by placing LED components, possibly as bare semiconductor chips, on a common substrate and using a common system for electrical connections, and, in many cases, also a common optical system as well as a common packaging arrangement encapsulating the LED chip array.
- the latter solution is commonly known in the LED . industry as a "chip-on-board” (COB) module.
- COB chip-on-board
- a "COB”module, or a “COB-type” module presents a number of advantages over an array of complete individual LED components combined into a common device. These advantages include reduced manufacturing costs (via using common electrical connections and optics) , higher output optical power, and more compact .size .
- 3aMeHHK)IIHH JIHCT optical power is observed from COB modules as compared to systems based on complete individual LEDs. This is due to the limitations of the optical system used to collect the light from individual LED chips andguide it from the module, i.e. to extract the generated light from the module.
- anoptical system is designed for a single semiconductor chip, light from the single chip may typically be collected freely in a hemisphere around the chip, resulting in high light extraction efficiency.
- each chip is surrounded by neighboring chips which partly absorb the emission or redirect it in such a way that it possibly never leaves the module.
- the chips of a COB module are encapsulated within an encapsulating material often forming a single encapsulating layer, or simply a single “encapsulation", which is common for all the chips.
- the encapsulation protects the chips from the effects of the ambient conditions.
- the encapsulation may also comprise so called “phosphors" for converting the primary wavelength emitted by the LED chips to one or more other wavelengths. For example, a typical case is the conversion of blue light emitted by GaN-based LEDs into white light required in lighting applications.
- the encapsulation often also forms the primary optical systems of the LED chips for redistributing the light emitted by the LED chips.
- the encapsulation can be shaped to have a lens for each LED chip placed on the substrate plate.
- COB-type module where the encapsulationcomprises lenses is disclosed in US2012/0119231 Al .
- a resin encapsulating body including a phosphor layer therein is formed on a circuitboard to cover the LED
- the encapsulating body includes a bottom portion and a plurality of lens portions integrally formed on the bottomportion, each lens portion being disposedabove a LED chip.
- a separate lens-shaped encapsulation for each individual LED chip of the module.
- Another typicalexample of a COB-type light emitting module where an encapsulation also serves as an optical system is disclosed in CN201363572, whereinthe silicone encapsulation molded above the LED chips form one single cambered lens surface. According to CN201363572, an ideal light spot effect and high light-emitting efficiency can be obtained by use of such encapsulation.
- the primary purpose of the shaped encapsulation serving as an optical system is to redistribute the light emitted by the LED chips so that a desired light pattern is formed.
- the actual efficiency of extraction of light from the module is often ignored, or at least is not optimized.
- efficient light extraction is of crucial importance for the overall efficiency of a light emitting module.
- the conventional lensesdesigned for light pattern shaping also sometimes serve for better light extraction from the individual chips, thereby increasing the light extraction efficiency fromthe individual LEDs, and, therefore, of the entire LED array as a whole.
- the LED chips are packed closely enough, which is often necessary for reaching a sufficiently compact size of the COB, light emitted by an individual chip may still experience interference by the neighboring chips.
- KR100824716 describes a COB-type flat light source modulehaving a textured encapsulation.
- the textured encapsulation which can be textured using an additive or subtractive process, is applied to the LED either prior to or during packaging.
- the textured surface helps to reduce total internal reflection within the encapsulation, thereby improving the extraction efficiency.
- chips can be mounted beneath a single textured encapsulation.
- a mold having irregular surfaces can be used to form multiple encapsulations over many LEDs simultaneously.
- texturing the encapsulation surface in a way that is described in this document is supposed to lead to a very narrow light beam pattern from the array, which is a serious drawback in general lighting applications.
- 3aMenHiomnfi JIHCT means.
- the accurate shapes of the texturing and the large-scale surface features are more or less randomly selected in US2011/0316006, and no systematic and general rules for selecting them are defined.
- turning the general principles into practice in the form of detailed design of the encapsulation still requires burdensome testing and/or simulating.
- WO2009093498 describes an LED package in which the extraction efficiency of light is enhanced for two contrary directions by reducing leakage of light, and provides also for a method for manufacturing such LED package.
- a substrate whereup6n an LED bare chip is mounted is sealed with a transparent resin, and a reflector is placed on the surface thereof.
- Metal reflection films are deposited partially on the reflector, so that the light enters the incident surface of the reflector from the LED bare chip through the sealing resin, and exits the exit surfaces in two contrary directions after being reflected from the reflection surfaces (metal reflection films) .
- This system is very complicated, and it greatly increases the size of the light emitting device and manufacturing costs.
- the purpose of the present invention is to provide a novel chip-on-board type light emitting module with efficient light extraction from the module.
- the light emitting module of the present invention is characterized by what is presented in claim 1.
- the light emitting module of the present invention comprises a substrate plate having contact means thereon for providing an electrical interface of the light emitting module and internal electrical connections within the light emitting module; a plurality of light emitting semiconductor chipsplaced on the substrate plate in a two-dimensional array and electrically connected via connector . structures to the contact means; and a continuous encapsulation on the substrate plate encapsulating the light emitting semiconductor chips and the connector structures, the encapsulation comprising a convex lens portion above each semiconductor chip.
- the light emitting module can be a complete "standalone" module to be operated as such or integrated in a larger device. It can also be a part or building block of a larger light source assembly.
- the module of the present invention can be a separable or non-separable sub-module in a larger module or assembly comprising also other sub-moduleswhich may be different or similar to that of the module according to the present invention.
- the substrate plate can be fabricated according to the principles known in the art.
- the substrate plate can be made of a ceramic material.
- a ceramic substrate plate may provide a highly
- Ceramics is a good choice also from thermal management point of view because a ceramic substrate plate can possess high thermal conductivity required for dissipating excessive heat during the operation of the light emitting module.
- One suitable example is an AI2O3 wafer with thickness, for example, of 0.2 to 2 mm, or an A1N wafer with similar thickness.
- the general principles of the present invention are not limited to any particular substrate plate material.
- the term "upper” in the contexts of the surfaces of the substrate plate, the encapsulation, and the LED chips refers to the surfacesfacing to the hemisphere into which the module emits light.
- the "upper” surface is the surface on which the semiconductor chips are located.
- the “upper” surface is the free surface opposite to the surface facing towards the substrate plate.
- “up” and “down” are not bound to the. real vertical direction but are linked to the direction of the normal of the substrate plate surface.
- contact means is meant here any means suitable for providing an electrical interface of the light emitting module and internal electrical connections within the light emitting module.
- a typical example is a patterned metal plating deposited on the substrate plate.
- Such metal plating can comprise different kinds of contact pads or electrodes, as well as wirings, via which the individual light emitting semiconductor chips of the module can be electrically connected to an external power source .
- the individual light emitting semiconductor chips of the module can be electrically connected to an external power source .
- connection structures can comprise any known structures suitable for electrically connecting the semiconductor chips to the contact means of the substrate plate for supplying electrical current or voltage to the semiconductor chips.
- the semiconductor chips may be connected to appropriate portions of patterned metal plating by means of wire bonding.
- soldered connector structures used e.g. in flip-chip technology . may be used.
- the light emitting semiconductor chips are the primary light emitting elements of the light emitting module. They can be, for example, light emitting diode LED chips of any known type. However, the present invention is not restricted to any particular type of the light emitting semiconductor chips.
- the chips can be attached to the substrate plate by any means known in the art . For example, possible methods for attaching the LEDs on the substrate plate are gluing with any already known LED die attach glue, and soldering.
- the encapsulation can be formed of any known encapsulating material suitable for the purpose of encapsulating the plurality of light emitting semiconductor chips, thereby protecting them against the effects of the possibly harmful substances and moisture present in the environment surrounding the light emitting module .
- examples include siliconesand epoxy, the former being the most common group of encapsulating materials used in the art.
- the key attributes of silicones that make them attractive materials particularly for high-brightness (HB) LEDs and LED-based light emitting modules include their high transparency in the UV-visible region, controlled refractive index, and stable thermo-opto-mechanical
- 3aMeHHH)IIHH JIHCT properties These materials are well known to those skilled in the art and are widely used in production of individual LEDs and COB modules.
- one important property of the encapsulating material is that it should allow formation of an encapsulation with a desired shape of the upper surface thereof. In molding process, such desired shape can be achieved simply by means of a properly shaped mold used during curing the initially substantially liquid encapsulating material.
- the encapsulating material is deposited or applied on the substrate plate in liquid form and solidified to have a flat surface. This flat surface can be then structured afterwards mechanically by using, for example, mechanical cutting tools, or optical tools such as a laser beam. These procedures are also well known to those skilled in the art.
- Continuous means that the encapsulation covers the array of the light emitting semiconductor chips as a continuous layer without any holes in it in the area of the chip array. Thus, the encapsulation covers also the substrate plate between the semiconductor chips.
- the convex lens portions above each semiconductor chip preferably coincide with the chips so that the middle point of each lens portion lies substantially above the middle point of a semiconductor chip.
- the surface of the convex lens portion has a curvature of radius Riens meeting the condition W ⁇ Riens ⁇ 2W, wherein is the width of the semiconductor chips, and the convex lens portions of the adjacent semiconductor chips are connected via a concave combining portion, the surface of which has a curvature of radius Rcomb ⁇ Rlens ⁇
- the width W of the semiconductor chips means the width in the direction of said fictitious plane of observation.
- a light emitting semiconductor chip emits light substantially from the entire width thereof.
- the width used in the definition above should be the former.
- the key element of the present invention is the shape bf the free upper surface of the encapsulation.
- the large-scale shape of the encapsulation surface comprising e.g. lens-like domes, is typically optimized for the purpose of producing a desired light pattern.
- the efficiency of extraction of light from the light emitting module in its turn, is usually improved by means of some small-scale structuring of the encapsulation surface.
- the entire encapsulation is formed and shaped so as to maximize the light extraction.
- the convex lens portion has a radius of curvature as defined above, and the convex lens portions are connected to each other via a cpncave combining portions as defined above.
- the surface of the encapsulation is "wavy" with
- the lowest point of the free upper surface of the encapsulation between the semiconductor chips is above the level of the upper surfaces of the semiconductor chips.
- the thickness of the encapsulation is preferably adjusted so that, except for the peripheral areas of the encapsulation outside the semiconductor chip array, the free upper surface of the encapsulation lies everywhere above the level of the upper surfaces of the semiconductor chips.
- the refraction index of the encapsulating material is preferably greater than that of the air, and smaller than that of the material of the chips. With the typical refraction index of the semiconductor chip materials being 1.76 and refraction index of the air being 1.0, the optimum refraction index of the encapsulating material lies in the range of 1.3 to 1.6.
- Light emitting semiconductor chips such as LED chips are typically is based on multiple quantumwell semiconductor heterostructures, and they emit light with an emission peak around a single wavelength which depends on the semiconductor material used.
- LEDs made of group III nitrides, such as gallium nitride GaN, typically emit in the blue or near-ultraviolet part of the spectrum.
- this light must be converted into white light. This is usually performed by means of a "phosphor" material receiving the light emitted by the LEDs at a primary wavelength and emitting the received energy at one or more longer wavelengths.
- the phosphor material is applied as phosphor particles embedded in a silicone gel or other encapsulating material forming the encapsulation.
- the encapsulation comprises such phosphor material for wavelength conversion of the light emitted by the semiconductor chips .
- the width W of the semiconductor chips meets the condition 0.4 mm ⁇ W ⁇ 1.5 mm, and the distance D between the adjacent chips meets the condition 0.5W ⁇ D ⁇ 2W.
- the width W means the width as defined above, i.e. the width in the direction of said fictitious plane of observation in which the characteristic features of the wavy surface of the encapsulation aredefined.
- FIGS 2a to 2c illustrate the background of the present invention
- FIGS 3 and 4a to 4e show examples of embodiments according to the present invention.
- Figure la shows a schematic cross-section of a LED- based COB-typelight emitting module disclosed in US 2009/0050923.
- the light emitting module is fabricated on a substrate plate.
- a metal plating forming the contact pads as well as the internal electrical connections in the form of conductor wirings is arranged on the substrate plate by using screen printing or plating/lithography process.
- LED chips are placed and attached by gluing on the substrate plate and electrically connected to each other as well as to the metal plating by wire bonding.
- Each LED chip is encapsulated within a dome-shaped silicone encapsulation. This solution supposedly has a drawbackin that when packing the chips in close proximity it is difficult to avoid interference of the neighboring lenses and chips in the output of a single chip .
- Figures lb and lc show a side-view and a cross- section, respectively, of a moduledisclosed in KR100824716.
- the module is fabricated on a substrate plate in which a printed circuit is formed.
- the module has a reflection layer formed in the substrate plate; LED chips; a transparent glass-ceramic layer; and a multi-function optical member located on the transparent glass-ceramic layer. Improved light extraction is achieved by means of the textured surface of the optical member.Also in this example,
- Figure Id shows a LED-based light source module disclosed in CN201363572.
- the module comprises a heat conducting base plate, an array of LEDs on the base plate, and a fluorescent powder and an encapsulation in the form of a molded silicone lens .above the LEDs.
- the molded silicone lens is shaped as a cambered lens. According to the publication, ideal light spot effect and a high light emitting efficiency can be obtained. Thus, this solution is aimed primarily at obtaining a desired light pattern from the module.
- Figure le shows a schematic cross-view of a LED array apparatusdisclosed in US2011/0316006, whereinLED chips are covered with a flat layer of encapsulation material, the surface of which is textured in order to improve light extraction from the module.
- Figure 2a shows a ceramic substrate plate 1 and nine LED chips 2 placed in a two-dimensional (3 x3) array on the substrate plate.
- the distance D between two adjacent chips in a single row and also between two adjacent rows is 1.4 mm.
- the width W of the square LED chips is 1.2 mm.
- Figure 2b shows the same configuration further comprising an encapsulation 3 in the form of a uniform and continuous layer of an encapsulating material.
- the encapsulation encapsulates the LED chips and the substrate plate in the area of the LED array. The encapsulation protects the chips mechanically and also
- 3aMeHHiomiiH JIHCT chemically, i.e. from the possibly harmful effects of the ambient conditions.
- TIR total internal reflections
- the encapsulation forms a single spherical lens 4 covering all the nine LED chips and having a radius of curvature R.
- the lens is superposed on a uniform flat layer 3 of the encapsulation material having a thickness H base .
- the encapsulation according to Figure 2c formed of an encapsulating material having a refractive index of 1.4, provides an enhancement of light extractionby 9% percent as compared to the flat encapsulation of Figure 2b.
- the encapsulation according to Figure 2c formed of an encapsulating material having a refractive index of 1.4, provides an enhancement of light extractionby 9% percent as compared to the flat encapsulation of Figure 2b.
- the module shown in Figure 3 is based on the basic configuration of a . substrate plate and a LED chip array of Figure 2a.
- An encapsulation 5 forms an optical elementand covers all nine LED chips 2 and the ceramic substrate plate 1, as well as the wirebonding6 connecting the LED chips to contact means on the chip (not shown in the drawings) .
- the encapsulation has a "wavy" upper surface comprising convex lens portions 7 at the locations of the LED chips, and concave combining portions 8 between the lens portions. This shape of the encapsulation is designed according to
- 3aMCHHiomnfi JIHCT the principles of the present invention to produce high light extraction.
- the level of the upper surface of the base portion defines the lowest level of the upper surface of the entire encapsulation.
- the lowest point of the upper surface of the concave combining portion lies at least at the height defined by the thickness H baS eOf the base portion.
- the height of theencapsulation over the wirebonding H W i re is 0.65 mm.
- 3aMeHHH)IIHH JIHCT micrometers converting light emitted by the chip at the wavelength 450 rtm into the light with the wavelength 570 nm, improved light extraction by 12% as compared to the structure shown in Figure 2b.
- the simulations also confirmed that the light extraction efficiency is not very sensitive to the placement of the spherical-shaped lenses exactly over the geometrical center of the LED chips. Deviation of the apex of the lens from the axis of the chip by 0.1-0.2 mm decreased light extraction improvement only by 1- 2.5 percentage points.
- Figures4a to 4e show further examples of encapsulations shaped according to the boundary conditions of the present invention.
- all lens portions of the encapsulations have generally a substantially spherical shape, but the curvature radius of the lens portions and . the combining portions vary.
- the exact level of the light extraction improvement varies depending on the actual shape of the encapsulation, in all examples the amount of light emitted by each chip and experiencing total internal reflection at the encapsulation/air interface is 50% at highest, as opposed to a typical value of about 60% in COB-type light emitting modules with a flatsurface of the encapsulation.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
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Abstract
L'invention concerne un module électroluminescent (10) comportant une plaque (1) de substrat; une pluralité de puces électroluminescentes (2) à semi-conducteur placées sur la plaque de substrat; et un enrobage continu (5) sur la plaque de substrat enrobant les puces électroluminescentes à semi-conducteur, l'enrobage comportant une partie (7) de lentille convexe au-dessus de chaque puce à semi-conducteur. Selon la présente invention, dans une coupe de l'enrobage suivant un plan passant par les milieux de deux puces à semi-conducteur adjacentes, la surface de la partie de lentille convexe présente une courbure de rayon Rlentille satisfaisant la condition W ≤ Rlentille ≤ 2W, où W est la largeur des puces à semi-conducteur, et les parties de lentille convexe des puces à semi-conducteur adjacentes sont reliées par l'intermédiaire d'une partie concave (8) de combinaison, dont la surface présente une courbure de rayon Rcomb ≤ Rlentille.
Priority Applications (1)
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PCT/RU2012/001127 WO2014104913A1 (fr) | 2012-12-27 | 2012-12-27 | Module à diodes électroluminescentes |
Applications Claiming Priority (1)
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PCT/RU2012/001127 WO2014104913A1 (fr) | 2012-12-27 | 2012-12-27 | Module à diodes électroluminescentes |
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WO2014104913A1 true WO2014104913A1 (fr) | 2014-07-03 |
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PCT/RU2012/001127 WO2014104913A1 (fr) | 2012-12-27 | 2012-12-27 | Module à diodes électroluminescentes |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180269247A1 (en) * | 2015-11-13 | 2018-09-20 | Toppan Printing Co., Ltd. | Solid-state imaging device and method of manufacturing the same |
JP2020025063A (ja) * | 2018-08-06 | 2020-02-13 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR20210005252A (ko) * | 2018-05-04 | 2021-01-13 | 레드맨 옵토일렉트로닉 컴퍼니 리미티드 | 디스플레이 모듈, 디스플레이 스크린 및 디스플레이 시스템 |
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US20180269247A1 (en) * | 2015-11-13 | 2018-09-20 | Toppan Printing Co., Ltd. | Solid-state imaging device and method of manufacturing the same |
US10986293B2 (en) * | 2015-11-13 | 2021-04-20 | Toppan Printing Co., Ltd. | Solid-state imaging device including microlenses on a substrate and method of manufacturing the same |
KR20210005252A (ko) * | 2018-05-04 | 2021-01-13 | 레드맨 옵토일렉트로닉 컴퍼니 리미티드 | 디스플레이 모듈, 디스플레이 스크린 및 디스플레이 시스템 |
JP2021522560A (ja) * | 2018-05-04 | 2021-08-30 | 深▲せん▼雷曼光電科技股▲ふん▼有限公司Ledman Optoelectronic Co., Ltd. | ディスプレイモジュール、表示スクリーン及びディスプレイシステム |
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JP7257501B2 (ja) | 2018-05-04 | 2023-04-13 | 深▲せん▼雷曼光電科技股▲ふん▼有限公司 | ディスプレイモジュール、表示スクリーン及びディスプレイシステム |
KR102535812B1 (ko) * | 2018-05-04 | 2023-05-23 | 레드맨 옵토일렉트로닉 컴퍼니 리미티드 | 디스플레이 모듈, 디스플레이 스크린 및 디스플레이 시스템 |
JP2020025063A (ja) * | 2018-08-06 | 2020-02-13 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6989782B2 (ja) | 2018-08-06 | 2022-02-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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