WO2014180471A1 - Solar cell and method for producing same - Google Patents
Solar cell and method for producing same Download PDFInfo
- Publication number
- WO2014180471A1 WO2014180471A1 PCT/DE2014/100162 DE2014100162W WO2014180471A1 WO 2014180471 A1 WO2014180471 A1 WO 2014180471A1 DE 2014100162 W DE2014100162 W DE 2014100162W WO 2014180471 A1 WO2014180471 A1 WO 2014180471A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- boron
- cell substrate
- backside
- dielectric
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 32
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims description 24
- 238000002161 passivation Methods 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 50
- 230000003071 parasitic effect Effects 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- Crystalline silicon solar cells with dielectric back coating are now state of the art. Likewise, backside passivated solar cells exist.
- the behavior of the parasitic contacts is still poorly studied.
- the parasitic contacts seem to be characterized by locally high electrical resistances and high recombination losses.
- no local Al-BSF forms here in contrast to the deliberately prepared contact openings.
- the occurrence of these parasitic contacts is proven: If, for example, a "Centaurus" solar cell dispenses with the laser opening of the backside dielectric, the solar cell should have an efficiency of 0.0% for a 100% dense dielectric, in fact such solar cells have up to 5% efficiency
- Electroluminescence images show a "starry sky", with parasitic contacts distributed over the entire cell surface and on the silver pad edges.
- the invention enables the fabrication of backside dielectrically passivated solar cells using a low cost, rough, textured backside surface provided with a boron-backfilled surface area (boron-BSF), followed by a non-perfectly dense backside dielectric and a full-surface or almost full-surface metallized back.
- boron-BSF now leads to a passivation of the resulting parasitic contacts.
- a boron-doped dielectric applied over the entire area can be applied to the rear side.
- the P0C13 diffusion used in the further process sequence drives the boron into the Si wafer by means of co-diffusion or by a separate heating step.
- the reverse side is completed by a full-surface or almost full-surface metallization.
- the boron-BSF from the boron-doped dielectric leads to a passivation of the resulting parasitic contacts, which results in an improvement in cell parameters.
- the process flow of the new Centaurus-Bor solar cell for multicrystalline wafers is as follows:
- Process sequence 1 1. Texturing wafers on both sides (acidic, eg NH 3 / HF) and cleaning (chemical)
- the result is a solar cell with an alkaline texture on the front.
- the cell edges i.e., the approximately 150-200pm "thick" faces
- the cell backside are acid textured, and this edge treatment results in extremely little breakage.
- the boron doped backside dielectric process is also feasible and useful on monocrystalline material. In this case, however, it would be preferred not to make an acidic texture in step 1.), but an alkaline (e.g., KOH / IPA).
- an alkaline e.g., KOH / IPA.
- Centaurus solar cell concept is supplemented by process points. The additional process steps are shown in italics.
- the AI back side must fire at random through the dielectric and make good contact with the Si wafer.
- Front passivation (PECVD layers) metallization The Al paste used may be more aggressive than standard pastes and will etch locally at random through the PECVD back side.
- the Al paste used is more aggressive than standard pastes and locally randomly etches through the PECVD backside. Especially with a texture on the back, the texture peaks are not / not so thickly covered with the PECVD layer, so that the AI better water into the Si et passivate and saturate the parasitic contacts.
- back surface field see, e.g., N.P. Härder et al., 31st IEEE-PVSC 2005, p.491-494.
- an a-Si: B, a boron-containing dielectric or the like can be deposited.
- process steps 2-4 can be replaced by a process step (deposition of a B-containing dielectric). Annealing can be done either in a separate process step or together with 7.)
- FIG. 1 shows electroluminescent images of dielectrically passivated cells without rear-side contact opening. Both with and without boron diffusion the parasitic contacts are visible as white dots. The boron diffusion does not prevent the contact formation, but causes their passivation.
- a rough back side of a solar cell substrate is understood to mean a non-polished and non-polish- or smooth-etched back side, which has a corresponding roughness.
- the rear side of the solar cell substrate or solar cell is that side which, during operation of the solar cell, is arranged facing away from the incident light.
- at least the back has a texture.
- an aluminum-containing paste is to be understood as a paste in which, after application and contact sintering / firing, a back contact formed by this paste has an electrical conductivity. which is essentially determined by AI included in the back page contact.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020157035167A KR20160034250A (en) | 2013-05-10 | 2014-05-10 | Solar cell and method for producing same |
CN201480039396.9A CN105409010A (en) | 2013-05-10 | 2014-05-10 | Solar cell and method for producing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013104861 | 2013-05-10 | ||
DE102013104861.7 | 2013-05-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014180471A1 true WO2014180471A1 (en) | 2014-11-13 |
Family
ID=51136271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2014/100162 WO2014180471A1 (en) | 2013-05-10 | 2014-05-10 | Solar cell and method for producing same |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR20160034250A (en) |
CN (1) | CN105409010A (en) |
WO (1) | WO2014180471A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3398208A1 (en) * | 2015-12-28 | 2018-11-07 | International Solar Energy Research Center Konstanz E.V. | Method for producing a bifacial solar cell and bifacial solar cell |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0933822A2 (en) * | 1998-01-20 | 1999-08-04 | Sharp Kabushiki Kaisha | Substrate for forming high-strenght thin semiconductor element and method for manufacturing high-strength thin semiconductor element |
US20050133084A1 (en) * | 2003-10-10 | 2005-06-23 | Toshio Joge | Silicon solar cell and production method thereof |
JP3872428B2 (en) * | 2000-10-06 | 2007-01-24 | 信越半導体株式会社 | Manufacturing method of solar cell |
KR20100119293A (en) * | 2009-04-30 | 2010-11-09 | 주식회사 효성 | Solar cell manufactured by aao and the method for manufacturing |
KR20100137271A (en) * | 2009-06-22 | 2010-12-30 | 주식회사 효성 | Method for making of back contact in solar cell |
US20110108098A1 (en) * | 2006-10-09 | 2011-05-12 | Pawan Kapur | Structures and methods for high-efficiency pyramidal three-dimensional solar cells |
US20120037224A1 (en) * | 2009-04-29 | 2012-02-16 | Mitsubishi Electric Corporation | Solar battery cell and method of manufacturing the same |
US20120211066A1 (en) * | 2011-02-21 | 2012-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
-
2014
- 2014-05-10 WO PCT/DE2014/100162 patent/WO2014180471A1/en active Application Filing
- 2014-05-10 KR KR1020157035167A patent/KR20160034250A/en not_active Application Discontinuation
- 2014-05-10 CN CN201480039396.9A patent/CN105409010A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0933822A2 (en) * | 1998-01-20 | 1999-08-04 | Sharp Kabushiki Kaisha | Substrate for forming high-strenght thin semiconductor element and method for manufacturing high-strength thin semiconductor element |
JP3872428B2 (en) * | 2000-10-06 | 2007-01-24 | 信越半導体株式会社 | Manufacturing method of solar cell |
US20050133084A1 (en) * | 2003-10-10 | 2005-06-23 | Toshio Joge | Silicon solar cell and production method thereof |
US20110108098A1 (en) * | 2006-10-09 | 2011-05-12 | Pawan Kapur | Structures and methods for high-efficiency pyramidal three-dimensional solar cells |
US20120037224A1 (en) * | 2009-04-29 | 2012-02-16 | Mitsubishi Electric Corporation | Solar battery cell and method of manufacturing the same |
KR20100119293A (en) * | 2009-04-30 | 2010-11-09 | 주식회사 효성 | Solar cell manufactured by aao and the method for manufacturing |
KR20100137271A (en) * | 2009-06-22 | 2010-12-30 | 주식회사 효성 | Method for making of back contact in solar cell |
US20120211066A1 (en) * | 2011-02-21 | 2012-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
Non-Patent Citations (1)
Title |
---|
N. . HARDER ET AL., 31ST IEEE-PVSC, 2005, pages 491 - 494 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3398208A1 (en) * | 2015-12-28 | 2018-11-07 | International Solar Energy Research Center Konstanz E.V. | Method for producing a bifacial solar cell and bifacial solar cell |
Also Published As
Publication number | Publication date |
---|---|
KR20160034250A (en) | 2016-03-29 |
CN105409010A (en) | 2016-03-16 |
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