[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

WO2014024297A1 - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法 Download PDF

Info

Publication number
WO2014024297A1
WO2014024297A1 PCT/JP2012/070402 JP2012070402W WO2014024297A1 WO 2014024297 A1 WO2014024297 A1 WO 2014024297A1 JP 2012070402 W JP2012070402 W JP 2012070402W WO 2014024297 A1 WO2014024297 A1 WO 2014024297A1
Authority
WO
WIPO (PCT)
Prior art keywords
dopant
paste
semiconductor substrate
diffusion
type impurity
Prior art date
Application number
PCT/JP2012/070402
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
雅人 米澤
邦彦 西村
成人 太田
浩昭 森川
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to PCT/JP2012/070402 priority Critical patent/WO2014024297A1/ja
Priority to CN201610982274.4A priority patent/CN106409923A/zh
Priority to JP2014529215A priority patent/JP5905966B2/ja
Priority to CN201280075188.5A priority patent/CN104521002B/zh
Publication of WO2014024297A1 publication Critical patent/WO2014024297A1/ja

Links

Images

Classifications

    • H01L31/0216—
    • H01L31/02168—
    • H01L31/0224—
    • H01L31/022425—
    • H01L31/028—
    • H01L31/18—
    • H01L31/1804—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for manufacturing a solar cell.
  • a pn junction In a general single crystal silicon solar cell or polycrystalline silicon solar cell, it is necessary to form a pn junction in order to separate carriers generated by irradiation with sunlight.
  • a p-type silicon substrate is used as the substrate
  • an n-type silicon layer is formed on the light-receiving surface side of the substrate by diffusing a group 5 element such as phosphorus on the light-receiving surface side of the substrate to form a pn junction.
  • the impurity element diffused in the substrate is called a dopant.
  • both sides of the substrate are obtained by thermally diffusing a phosphorus-based dopant to the light receiving surface side of the substrate at a temperature of about 700 ° C. to 1000 ° C.
  • a diffusion layer is formed on the entire surface. Then, if necessary, an unnecessary portion of the diffusion layer is removed to obtain a solar cell diffusion layer.
  • a p-type silicon layer is formed on the light-receiving surface side of the substrate by diffusing a group 3 element such as boron on the light-receiving surface side of the substrate. Forming a pn junction.
  • the selective emitter structure is a semiconductor single-crystal silicon substrate or polycrystalline silicon substrate in which the dopant diffusion concentration in the junction region bonded to the metal electrode is higher than the dopant diffusion concentration in regions other than the junction region.
  • the region other than the bonding region is a light receiving surface.
  • the light-receiving surface has a lower dopant diffusion concentration than the bonding region bonded to the metal electrode. For this reason, the selective emitter structure has an advantage that the recombination of carriers due to impurity levels can be reduced and the optical output current can be increased.
  • each method has a problem that it requires a dedicated device, or it is necessary to perform a plurality of complicated processes, and further, maintenance of the device is difficult. These problems cause an increase in the manufacturing cost of the solar cell.
  • This invention is made in view of the above, Comprising: It aims at obtaining the manufacturing method of the solar cell which can manufacture easily the solar cell excellent in photoelectric conversion efficiency which has a selective emitter structure at low cost. .
  • a method for manufacturing a solar cell according to the present invention contains a second conductivity type impurity element in a part of one surface side of a first conductivity type semiconductor substrate.
  • a first step of applying a paste, and a first heat treatment in an atmosphere of a gas not containing an impurity element of a second conductivity type in the processing chamber, the semiconductor substrate, and the paste in a lower region of the paste in the semiconductor substrate The second conductivity type impurity element is diffused from the first impurity diffusion layer to form a first impurity diffusion layer in which the second conductivity type impurity element is diffused at the first concentration in the lower region of the paste of the semiconductor substrate.
  • a second heat treatment in an atmosphere of a dopant-containing gas containing an impurity element of the second conductivity type in the processing chamber is performed on the semiconductor substrate continuously with the first heat treatment. Then, the second conductivity type impurity element is diffused from the dopant-containing gas into the exposed region where the paste is not applied on the one surface side of the semiconductor substrate, so that the second conductivity type impurity element becomes the first concentration.
  • FIG. 1-1 is a plan view showing a schematic configuration of a solar cell according to an embodiment of the present invention.
  • FIG. 1-2 is a main part sectional view showing a schematic configuration of the solar cell according to the embodiment of the present invention, and is a main part sectional view taken along line AA in FIG. 1-1.
  • FIG. 2 is a flowchart for explaining an example of a method for manufacturing a solar cell according to an embodiment of the present invention.
  • FIG. 3A is a cross-sectional view of the main part for explaining an example of the manufacturing process of the solar cell according to the embodiment of the present invention.
  • FIGS. 3-2 is principal part sectional drawing for demonstrating an example of the manufacturing process of the solar cell concerning embodiment of this invention.
  • FIGS. FIGS. 3-3 is principal part sectional drawing for demonstrating an example of the manufacturing process of the solar cell concerning embodiment of this invention.
  • FIGS. FIGS. 3-4 is principal part sectional drawing for demonstrating an example of the manufacturing process of the solar cell concerning embodiment of this invention.
  • FIGS. FIGS. 3-5 is principal part sectional drawing for demonstrating an example of the manufacturing process of the solar cell concerning embodiment of this invention.
  • FIGS. FIGS. 3-6 is principal part sectional drawing for demonstrating an example of the manufacturing process of the solar cell concerning embodiment of this invention.
  • FIGS. FIGS. 3-7 is principal part sectional drawing for demonstrating an example of the manufacturing process of the solar cell concerning embodiment of this invention.
  • FIGS. FIG. 3-4 is principal part sectional drawing for demonstrating an example of the manufacturing process of the solar cell concerning embodiment of this invention.
  • FIGS. FIGS. 3-4 is principal part sectional drawing for demonstrating an example of the manufacturing process of the solar cell concerning embodiment of this invention.
  • FIGS. FIGS. 3-5 is principal
  • FIG. 4A is a planar image showing the main part of the screen printing plate using a stainless mesh in a state before the durability test (new state).
  • FIG. 4-2 is a planar image showing a main part after a resistance test of a screen printing plate using a stainless mesh.
  • FIG. 5-1 is a planar image showing the main part of the screen printing plate using a resin mesh in the state before the durability test (new state).
  • FIG. 5-2 is a planar image showing the main part after the test of the screen printing plate B using a resin mesh.
  • FIG. 6 is a diagram illustrating an example of diffusion conditions in a two-stage continuous diffusion process (a first diffusion process and a second diffusion process).
  • FIG. 7-1 is a characteristic diagram showing a change in sheet resistance of the light-receiving surface of the p-type silicon substrate after the formation of the n-type impurity diffusion layer according to the flow rate of phosphorus oxychloride (POCl 3 ) gas during the diffusion process.
  • FIG. 7-2 is a schematic diagram showing a measurement position on a p-type silicon substrate in a horizontally long thermal diffusion furnace.
  • FIG. 8 shows a state in which light is irradiated by a halogen lamp to the light-receiving surface side of the semiconductor substrate on which the antireflection film is formed after the formation of the first n-type impurity diffusion layer and the second n-type impurity diffusion layer by the two-stage continuous diffusion process.
  • FIG. 9 shows a state in which infrared rays are irradiated from the light bulb to the light-receiving surface side of the semiconductor substrate on which the antireflection film is formed after the formation of the first n-type impurity diffusion layer and the second n-type impurity diffusion layer by the two-stage continuous diffusion process. Is an image taken with an infrared camera.
  • FIG. 1-1 is a plan view showing a schematic configuration of a solar cell according to an embodiment of the present invention.
  • FIG. 1-2 is a main part sectional view showing a schematic configuration of the solar cell according to the embodiment of the present invention, and is a main part sectional view taken along line AA in FIG. 1-1.
  • an n-type impurity diffusion layer 3 is formed by phosphorous diffusion on the light-receiving surface side of a semiconductor substrate 2 made of p-type silicon (hereinafter referred to as p-type silicon substrate 2).
  • p-type silicon substrate 2 p-type silicon
  • a semiconductor substrate 11 having a junction is formed.
  • an antireflection film 4 made of, for example, a silicon nitride film (SiN film) is formed on the n-type impurity diffusion layer 3.
  • SiN film silicon nitride film
  • the semiconductor substrate 2 is not limited to a p-type silicon substrate, and an n-type polycrystalline silicon substrate or an n-type single crystal silicon substrate may be used.
  • minute unevenness constituting a texture structure for confining light is formed (not shown).
  • the minute unevenness (texture) has a structure that increases the area for absorbing light from the outside on the light receiving surface, suppresses the reflectance on the light receiving surface, and efficiently confines light in the solar cell 1.
  • the antireflection film 4 is made of a silicon nitride film (SiN film) that is an insulating film.
  • the antireflection film 4 is not limited to a silicon nitride film (SiN film), and may be formed of an insulating film such as a silicon oxide film (SiO 2 film) or a titanium oxide film (TiO 2 ) film.
  • a plurality of long and narrow surface silver grid electrodes 5 are arranged side by side on the light receiving surface side of the semiconductor substrate 11, and a surface silver bus electrode 6 electrically connected to the surface silver grid electrode 5 is substantially the same as the surface silver grid electrode 5. They are provided so as to be orthogonal to each other, and are respectively electrically connected to the n-type impurity diffusion layer 3 at the bottom portion.
  • the front silver grid electrode 5 and the front silver bus electrode 6 are made of a silver material.
  • the front silver grid electrode 5 has a width of about 70 ⁇ m to 200 ⁇ m, for example, and is arranged substantially in parallel with an interval of about 2 mm, for example, and collects electricity generated inside the semiconductor substrate 11.
  • the front silver bus electrodes 6 have a width of about 1 mm to 3 mm, for example, and are arranged in two to four per solar cell, and take out the electricity collected by the front silver grid electrode 5 to the outside.
  • the front silver grid electrode 5 and the front silver bus electrode 6 constitute a light receiving surface side electrode 12 which is a first electrode having a comb shape. Since the light receiving surface side electrode 12 blocks sunlight incident on the semiconductor substrate 11, it is desirable to reduce the area as much as possible from the viewpoint of improving the power generation efficiency, and a comb-shaped surface as shown in FIG. In general, the silver grid electrode 5 and the bar-shaped front silver bus electrode 6 are arranged.
  • a silver paste is usually used, for example, lead boron glass is added.
  • This glass has a frit shape and is composed of, for example, lead (Pb) 5-30 wt%, boron (B) 5-10 wt%, silicon (Si) 5-15 wt%, and oxygen (O) 30-60 wt%.
  • lead (Pb) 5-30 wt%
  • boron (B) 5-10 wt%
  • silicon Si 5-15 wt%
  • oxygen (O) 30-60 wt% oxygen
  • zinc (Zn) or cadmium (Cd) may be mixed by several wt%.
  • Such lead boron glass has a property of melting by heating at several hundred degrees C. (for example, 800.degree. C.) and eroding silicon at that time.
  • a method of obtaining electrical contact between a silicon substrate and a silver paste by using the characteristics of the glass frit is used.
  • a back aluminum electrode 7 made of an aluminum material is provided on the entire back surface (surface opposite to the light receiving surface) of the semiconductor substrate 11.
  • the back aluminum electrode 7 constitutes a back electrode.
  • a p + layer (BSF (Back Surface Field)) 8 containing a high-concentration impurity is formed on the surface layer portion on the back surface side of the semiconductor substrate 11.
  • the p + layer (BSF) 8 is provided to obtain the BSF effect, and the electron concentration of the p-type layer (semiconductor substrate 2) is increased by an electric field having a band structure so that electrons in the p-type layer (semiconductor substrate 2) do not disappear. Like that.
  • the n-type impurity diffusion layer 3 is formed in the surface layer portion of the p-type silicon substrate 2 on the light-receiving surface side. That is, in the surface layer portion of the p-type silicon substrate 2 on the light-receiving surface side, a high-concentration impurity diffusion layer (low resistance) in which n-type impurities are diffused at a high concentration is formed in the lower region of the light-receiving surface-side electrode 12 and the vicinity thereof. A first n-type impurity diffusion layer 3a which is a diffusion layer) is formed.
  • a low-concentration impurity diffusion layer (a high-concentration diffusion layer in which n-type impurities are diffused at a low concentration)
  • a second n-type impurity diffusion layer 3b which is a resistance diffusion layer
  • the second diffusion concentration is higher than the first diffusion concentration. Becomes smaller. Further, if the electric resistance value of the first n-type impurity diffusion layer 3a is the first electric resistance value and the electric resistance value of the second n-type impurity diffusion layer 3b is the second electric resistance value, the second electric resistance value is the first electric resistance value. It becomes larger than the electric resistance value.
  • the light receiving surface side electrode 12 described above is formed on the first n-type impurity diffusion layer 3a.
  • a region where the light receiving surface side electrode 12 is not formed and a region where the second n type impurity diffusion layer 3b is formed in the first n-type impurity diffusion layer 3a are light receiving surfaces on which light is incident on the solar cell 1.
  • the first n-type impurity diffusion layer 3a having a low electrical resistance is formed below the light-receiving surface side electrode 12 on the light-receiving surface side, and the p-type silicon substrate 2 is formed. And the electrical resistance (contact resistance) between the light receiving surface side electrode 12 is reduced.
  • a second n-type impurity diffusion layer 3b having a low impurity concentration is formed in the other region on the light receiving surface side to reduce the recombination rate at which electrons are generated and disappear. Therefore, the solar cell 1 according to the embodiment has a selective emitter structure composed of the first n-type impurity diffusion layer 3a and the second n-type impurity diffusion layer 3b.
  • FIG. 2 is a flowchart for explaining an example of a method for manufacturing a solar cell according to an embodiment of the present invention.
  • FIGS. 3-1 to 3-7 are cross-sectional views of relevant parts for explaining an example of the manufacturing process of the solar cell according to the embodiment of the present invention.
  • a p-type silicon substrate 2 that is most frequently used for consumer solar cells is prepared.
  • the p-type silicon substrate 2 is obtained by cutting and slicing a single crystal silicon ingot or polycrystalline silicon ingot formed by cooling and solidifying molten silicon to a desired size and thickness with a wire saw using a band saw or a multi-wire saw. Because it is manufactured, the damage when slicing remains on the surface. Therefore, the surface of the silicon substrate is first etched by dipping the p-type silicon substrate 2 in an acid or heated alkaline solution, for example, an aqueous sodium hydroxide solution or an aqueous potassium hydroxide solution, to remove the damaged layer. A damaged region that occurs at the time of cutting and exists near the surface of the p-type silicon substrate 2 is removed.
  • the thickness of the silicon substrate after removing the damage is, for example, 180 ⁇ m and the outer dimensions are 156 mm ⁇ 156 mm.
  • the silicon substrate may be p-type or n-type.
  • the silicon substrate may be a polycrystalline silicon substrate or single crystal silicon.
  • the p-type silicon substrate 2 is anisotropically etched with a solution of about 80 ° C. to 90 ° C. obtained by adding several to several tens of wt% of isopropyl alcohol (IPA) to several wt% of potassium hydroxide (KOH) aqueous solution.
  • IPA isopropyl alcohol
  • KOH potassium hydroxide
  • Pyramidal micro unevenness is formed on the surface of the mold silicon substrate 2 on the light receiving surface side.
  • a texture structure By forming such a texture structure on the light receiving surface side of the semiconductor substrate, it is possible to cause multiple reflections of light on the surface of the solar cell and efficiently absorb the light incident on the solar cell inside the silicon substrate. It is possible to effectively reduce the reflectance and improve the conversion efficiency.
  • a random pyramid-shaped texture structure is formed by anisotropic etching of the surface of the p-type silicon substrate 2 using alkali.
  • Whichever method is used such as a method of obtaining a honeycomb structure or an inverted pyramid structure on the surface of the p-type silicon substrate 2 by etching through a mask material, or a method using reactive gas etching (RIE).
  • RIE reactive gas etching
  • a dopant-containing paste 21 as a diffusion source-containing coating agent is subjected to a screen printing method. It is applied and formed on one surface of the p-type silicon substrate 2 (FIG. 3-1, step S10). Since the p-type silicon substrate 2 is used here, a dopant-containing paste 21 containing a phosphorus compound is used in order to use, for example, phosphorus as a dopant. As a dopant, a group 5 element can be used in addition to phosphorus. When an n-type silicon substrate is used as the silicon substrate, a dopant-containing paste containing a group 3 element such as boron is used as the dopant.
  • the dopant-containing paste 21 does not sublime and burn (burn out) even at a thermal diffusion temperature (heat treatment temperature) in a first diffusion step described later, and is a neutral resin paste that is not acidic.
  • a dopant-containing paste 21 for example, a solar cell diffusion paste YT-2100-N (manufactured by Hitachi Chemical Co., Ltd.) can be used.
  • this solar cell diffusion paste YT-2100-N manufactured by Hitachi Chemical Co., Ltd.
  • this solar cell diffusion paste YT-2100-N manufactured by Hitachi Chemical Co., Ltd.
  • the first n-type impurity diffusion layer 3a On the first n-type impurity diffusion layer 3a, the light-receiving surface side electrode 12 is formed in a later step, and the first n-type impurity diffusion layer 3a and the light-receiving surface side electrode 12 are brought into electrical contact. An arrangement error occurs when the light receiving surface side electrode 12 is formed. Therefore, the first n-type impurity diffusion layer 3 a has an outer shape that extends slightly outward from the outer shape of the light-receiving surface side electrode 12 at the position where the light-receiving surface side electrode 12 is formed in the plane of the p-type silicon substrate 2. The light receiving surface side electrode 12 is formed in a larger shape.
  • screen printing of the dopant-containing paste 21 is performed using a screen printing plate in which the width of the opening is wider than the width of the light receiving surface side electrode 12.
  • the width of the dopant-containing paste 21 is set to 250 ⁇ m in consideration of the positional deviation of the light receiving surface side electrode 12.
  • the opening area is about 2.2 cm 2 .
  • the amount of the dopant-containing paste 21 used in printing on one p-type silicon substrate 2 is about 50 mg.
  • the specifications of the screen printing plate used for screen printing of the dopant-containing paste 21 in the present embodiment are as follows, for example.
  • a screen printing plate for forming the first n-type impurity diffusion layer 3a formed at the formation position of the surface silver grid electrode 5 in the light receiving surface side electrode 12 is shown.
  • FIG. 4A is a plane image showing the main part of the screen printing plate A using a stainless mesh in a state before the durability test (new state).
  • 4A is an image with a magnification of 50 times
  • FIG. 4A is an image with a magnification of 200 times
  • FIG. 4-2 is a planar image showing the main part after the durability test of the screen printing plate A using a stainless mesh.
  • 4-2 (a) is an image with a magnification of 50 times
  • FIG. 4-2 (b) is an image with a magnification of 200 times.
  • 4A and 4B show the surface state of the periphery of the opening 32 on the forming surface side (opposite to the emulsion coating surface) of the stainless mesh 31 on which the paste is placed in the screen printing plate A.
  • FIG. 4A and 4B show the surface state of the periphery of the opening 32 on the forming surface side (opposite to the emulsion coating surface) of the stainless mesh 31 on which the paste is placed in the
  • FIG. 5-1 is a planar image showing the main part of the screen printing plate B using a resin mesh in the state before the durability test (new state).
  • FIG. 5A is an image with a magnification of 50 times
  • FIG. 5A is an image with a magnification of 200 times.
  • FIG. 5-2 is a planar image showing the main part after the test of the screen printing plate B using a resin mesh.
  • FIG. 5-2 (a) is an image with a magnification of 50 times
  • FIG. 5-2 (b) is an image with a magnification of 200 times.
  • FIGS. 5A and 5B show the surface condition around the opening 34 on the side of the resin mesh 33 on which the paste is placed on the screen printing plate B (on the side opposite to the emulsion coating surface).
  • the stainless mesh or resin mesh in the screen printing plate is corroded.
  • a neutral resin paste is used as the dopant-containing paste 21 instead of an acid, so that corrosion of the screen printing plate can be prevented.
  • a general urethane rubber squeegee and silicon rubber squeegee can be used as the squeegee used for the screen printing of the dopant-containing paste 21.
  • the dopant-containing paste 21 When an acidic paste is used as the dopant-containing paste 21, the squeegee made of urethane rubber or silicon rubber is corroded. However, in the present embodiment, a neutral resin paste is used as the dopant-containing paste 21 instead of an acid, so that squeegee corrosion can be prevented.
  • the dopant-containing paste 21 in a stationary state When the viscosity of the dopant-containing paste 21 in a stationary state is low, when the dopant-containing paste 21 is placed on the screen printing plate, the dopant-containing paste 21 continues to spread on the screen printing plate. For this reason, in the case of continuous printing in which the dopant-containing paste 21 is continuously printed on the plurality of p-type silicon substrates 2, it is preferable to use a wide scraper that reaches the frame of the screen printing plate. Moreover, you may install the small frame which prevents that the dopant containing paste 21 spreads inside the frame of a screen printing plate. Moreover, in order to improve the viscosity itself in the stationary state of the dopant-containing paste 21, for example, a thixotropic agent may be added to the paste.
  • the first n-type impurity diffusion layer 3a on which the light receiving surface side electrode 12 is formed must be formed in a shape larger than the light receiving surface side electrode 12.
  • region of the dopant containing paste 21 must also be made larger than the formation area of the light-receiving surface side electrode 12. Therefore, the area of the opening of the screen printing plate is larger than that of the opening of the screen printing plate used for forming the light receiving surface side electrode 12.
  • the dopant-containing paste 21 may hang down from the opening even when the printing operation is stopped. In this case, bleeding of the dopant-containing paste 21 occurs, and the dopant-containing paste 21 cannot be printed in a desired pattern.
  • the coating width of the first n-type impurity diffusion layer 3a is 250 ⁇ m, that is, the opening width of the screen printing plate is 250 ⁇ m
  • the opening is finely divided in the width direction while the width of the entire opening is 250 ⁇ m.
  • a lifetime killer such as a metal impurity, is used for a transfer system of the p-type silicon substrate 2 in a screen printing machine, a stage on which the p-type silicon substrate 2 is placed, and other contact points with the p-type silicon substrate 2. Try to eliminate existence as much as possible.
  • the used dopant-containing paste 21 after screen printing can be discarded as combustible waste in the same manner as the aluminum-containing paste used at the time of electrode formation.
  • the coating method of the dopant containing paste 21 is not limited to the screen printing method.
  • step S10 a drying process for drying the dopant-containing paste 21 is performed (step S10). If the drying speed of the dopant-containing paste 21 is low after printing the dopant-containing paste 21, the printed dopant-containing paste 21 blurs and a desired print pattern cannot be obtained. For this reason, drying of the dopant-containing paste 21 is preferably performed quickly. For example, it is preferable to dry the dopant-containing paste 21 at a high temperature using an infrared heater or the like.
  • terpineol when terpineol is contained as a solvent in the dopant-containing paste 21, it is preferable to dry the dopant-containing paste 21 at a temperature of 200 ° C. or higher.
  • ethyl cellulose when ethyl cellulose is contained as a resin component in the dopant-containing paste 21, it is preferable to dry the dopant-containing paste 21 at a temperature of 400 ° C. or higher in order to burn the ethyl cellulose. Even when the dopant-containing paste 21 is dried at a temperature lower than 400 ° C., there is no problem because ethyl cellulose can be burned in the subsequent diffusion step.
  • the drying of the dopant-containing paste 21 is preferably performed in an open system, that is, in a flat state in which a space above the printing surface of the dopant-containing paste 21 in the p-type silicon substrate 2 is vacant.
  • terpineol (solvent) contained in the dopant-containing paste 21 is volatilized after other volatilization. It adheres again to the silicon substrate 2 and causes deterioration of the characteristics of the solar cell.
  • the dopant-containing paste 21 is dried in a sealed state, for example, terpineol (solvent) contained in the dopant-containing paste 21 is reattached to the p-type silicon substrate 2 after volatilization, resulting in deterioration of the characteristics of the solar cell.
  • terpineol (solvent) contained in the dopant-containing paste 21 is reattached to the p-type silicon substrate 2 after volatilization, resulting in deterioration of the characteristics of the solar cell.
  • the space between the p-type silicon substrates 2 can be widened to forcibly distribute the dry atmosphere. preferable. Thereby, reattachment to the p-type silicon substrate 2 of volatile components, such as terpineol (solvent), can be prevented.
  • volatile components such as terpineol (solvent)
  • first diffusion process After the dopant containing paste 21 is dried, the p-type silicon substrate 2 is put into a thermal diffusion furnace, and a first diffusion step (first heat treatment) which is a thermal diffusion step of the dopant (phosphorus) by the dopant containing paste 21 is performed (FIG. 1). 3-2, Step S20).
  • This first diffusion process is the first stage of the two stages of continuous diffusion processes.
  • an atmospheric state in which, for example, nitrogen gas (N 2 ), oxygen gas (O 2 ), a mixed gas of nitrogen and oxygen (N 2 / O 2 ), air, or the like is circulated in the thermal diffusion furnace.
  • the flow rate of the atmospheric gas is not particularly limited. Further, the flow rate ratio of each atmosphere in the case of a mixed atmosphere is not particularly limited, and any flow rate may be used.
  • the flow rate of the mixed gas of nitrogen and oxygen (N 2 / O 2 ) is, for example, N 2 : 5.7 SLM, O 2 : 0.6 SLM.
  • the first diffusion step phosphorus oxychloride (POCl 3 ) is not used, and there is no dopant (phosphorus) diffusion source other than the dopant-containing paste 21.
  • the first diffusion step is performed, for example, at a temperature of 870 ° C. to 940 ° C. and held for 5 minutes to 10 minutes. For this reason, thermal diffusion of the dopant (phosphorus) is performed only in the lower part of the region where the dopant-containing paste 21 is printed on the p-type silicon substrate 2. As a result, the dopant (phosphorus) is diffused only in the region extending slightly outside the outer shape of the region where the light receiving surface side electrode 12 is formed in the plane of the p-type silicon substrate 2.
  • the dopant phosphorus
  • the dopant-containing paste 21 is thermally diffused from the dopant-containing paste 21 to a lower region of the printing region of the dopant-containing paste 21 on the surface of the p-type silicon substrate 2 to a high concentration (first diffusion concentration).
  • a first n-type impurity diffusion layer 3a is formed.
  • the first n-type impurity diffusion layer 3a is formed in a region that extends slightly outside the outer shape of the light-receiving surface side electrode 12 in the plane of the p-type silicon substrate 2, and in the solar cell 1, the light-receiving surface side electrode 12 lower regions and their neighboring regions.
  • the first diffusion step when thermal diffusion is performed under a condition containing oxygen gas (O 2 ), the region containing no dopant-containing paste 21 on the surface of the p-type silicon substrate 2 is thermally diffused. Due to the influence of time, a thin oxide film 22 is formed on the surface.
  • O 2 oxygen gas
  • the p-type silicon substrate 2 needs to be quickly put into a thermal diffusion furnace.
  • the dried dopant-containing paste 21 absorbs moisture or the like in the atmosphere, the dopant-containing paste 21 spreads to a region other than the printing region, and a desired printing pattern is destroyed. Therefore, attention must be paid to the moisture absorption of the dopant-containing paste 21 particularly in the humid season.
  • a second diffusion step (second heat treatment) that is a thermal diffusion step of the dopant (phosphorus) with phosphorus oxychloride (POCl 3 ) is subsequently performed (FIG. 3-3, step S30). That is, the p-type silicon substrate 2 is not taken out of the thermal diffusion furnace, and the second diffusion step is continuously performed after the first diffusion step (continuous diffusion treatment).
  • This second diffusion process is the second stage of the two-stage continuous diffusion process.
  • the second diffusion step is performed in the presence of phosphorus oxychloride (POCl 3 ) gas in a thermal diffusion furnace. That is, in the first diffusion step, thermal diffusion was performed under an atmospheric condition that does not include phosphorus oxychloride (POCl 3 ). In the second diffusion step, phosphorus oxychloride (POCl 3 ) was used as a dopant (phosphorus) diffusion source. ) Is carried out under atmospheric conditions.
  • the flow rate of the atmospheric gas is not particularly limited, and may be set as appropriate according to various conditions such as diffusion concentration, diffusion temperature, and diffusion time.
  • the second diffusion step is performed by lowering the temperature from 870 ° C. to 900 ° C. of the first diffusion step to, for example, 800 ° C. to 840 ° C. and holding for 10 minutes to 20 minutes.
  • the second n-type impurity diffusion layer 3b is formed by thermally diffusing the dopant (phosphorus) to the second diffusion concentration.
  • the second n-type impurity diffusion layer 3 b serves as a light receiving surface on which light enters in the solar cell 1.
  • a glassy (phosphosilicate glass, PSG: Phospho-Silicate Glass) layer deposited on the surface during the diffusion process is formed on the surface of the p-type silicon substrate 2 immediately after the second diffusion step (not shown). ).
  • FIG. 6 is a diagram showing an example of diffusion conditions in a two-stage continuous diffusion process (first diffusion process and second diffusion process).
  • the horizontal axis indicates the processing time in the two-stage continuous diffusion process
  • the vertical axis indicates the processing temperature (in-furnace set temperature) (° C.) in the two-stage continuous diffusion process.
  • the oxide film 22 is formed thicker, and the dopant (phosphorus) becomes difficult to diffuse in the second diffusion step. Caution must be taken. For this reason, it is necessary to adjust various conditions such as the flow rate of atmospheric gas, diffusion temperature, and diffusion time.
  • the diffusion conditions when adjusting the diffusion conditions for obtaining a desired light receiving surface sheet resistance value, it is necessary to pay attention to the following matters.
  • the diffusion conditions phosphorus oxychloride (POCl 3 ) on the p-type silicon substrate 2 on which the dopant-containing paste 21 is printed, the diffusion conditions (temperature, pressure, flow rate, etc.) are set so that the silicon substrate contains the dopant.
  • the n-type impurity diffusion layer is formed only by diffusion using conventional phosphorous oxychloride (POCl 3 ) in which the paste 21 is not used, the sheet resistance of the light receiving surface after the formation of the n-type impurity diffusion layer is increased.
  • the following method can be given. That is, the flow rate of the phosphorus oxychloride (POCl 3 ) gas per the same processing quantity is increased as compared with the conventional diffusion with phosphorus oxychloride (POCl 3 ) in which the dopant-containing paste 21 is not printed on the silicon substrate.
  • the flow rate of the phosphorus oxychloride (POCl 3 ) gas per the same processing quantity is increased as compared with the conventional diffusion with phosphorus oxychloride (POCl 3 ) in which the dopant-containing paste 21 is not printed on the silicon substrate.
  • FIG. 7-1 is a characteristic diagram showing a change in sheet resistance of the light-receiving surface of the p-type silicon substrate 52 after the formation of the n-type impurity diffusion layer according to the flow rate of phosphorus oxychloride (POCl 3 ) gas during the diffusion process.
  • the horizontal axis indicates the position of the p-type silicon substrate 52 in the horizontally long thermal diffusion furnace 51
  • the vertical axis indicates the sheet resistance of the light-receiving surface of the p-type silicon substrate 52 after the diffusion process [ ⁇ / ⁇ ].
  • FIG. 7-2 is a schematic diagram showing a measurement position on the p-type silicon substrate 52 in the heat diffusion furnace 51 provided in a horizontally long shape.
  • the numbers on the p-type silicon substrate 52 in FIG. 7-2 correspond to the numbers (measurement positions) on the horizontal axis in FIG.
  • FIG. 7-1 shows the data of Sample 1 in which phosphorus was diffused only with conventional phosphorus oxychloride (POCl 3 ) on the p-type silicon substrate 52 on which the dopant-containing paste was not printed.
  • ⁇ marks indicate that phosphorus is diffused by the two-stage continuous diffusion process (first diffusion process and second diffusion process) on the p-type silicon substrate 52 on which the dopant-containing paste is printed.
  • the data of sample 2 is shown.
  • the flow rate of phosphorus oxychloride (POCl 3 ) in the second diffusion step of sample 2 is the same as that of sample 1.
  • FIG. 7-2 phosphorus oxychloride (POCl 3 ) gas is introduced from the left end side in FIG. 7-2 and exhausted from the right end side.
  • the p-type silicon substrate 52 is vertically arranged with several tens of substrates as a set with a predetermined interval in the horizontal direction. A plurality of sets are arranged at predetermined intervals in the extending direction of the thermal diffusion furnace 51.
  • hundreds of p-type silicon substrates 52 are put in the thermal diffusion furnace 51 to perform continuous diffusion.
  • FIGS. 7-1 and 7-2 show seven sets of p-type silicon substrates 52 from the left end in the thermal diffusion furnace 51.
  • FIG. 7-1 and 7-2 show seven sets of p-type silicon substrates 52 from the left end in the thermal diffusion furnace 51.
  • the flow rate of phosphorus oxychloride (POCl 3 ) in the second diffusion step is the same as that in the case of sample 1, and two steps of continuous diffusion steps (first diffusion step and second diffusion step) are performed.
  • the sheet resistance of the light receiving surface of the p-type silicon substrate 52 after the formation of the n-type impurity diffusion layer increases as the flow direction of phosphorus oxychloride (POCl 3 ) increases. This is because phosphorus oxychloride (POCl 3 ) is consumed by the dopant-containing paste 21 printed on the p-type silicon substrate 52 during the second diffusion step.
  • the second diffusion step As an example of an increase in the flow rate of phosphorus oxychloride (POCl 3 ) gas in the second diffusion step, diffusion using only phosphorus oxychloride (POCl 3 ) with respect to a p-type silicon substrate to which the dopant-containing paste 21 is not applied, for example.
  • the conditions (flow rate conditions) are N 2 : 5.8 SLM, O 2 : 0.9 SLM, POCl 3 : 1.5 SLM
  • the diffusion conditions (flow rate conditions) in N 2 may be set to N 2 : 5.8 SLM, O 2 : 0.9 SLM, and POCl 3 : 2.0 SLM.
  • the flow rate of phosphorus oxychloride (POCl 3 ) gas when 100 p-type silicon substrates are processed at once is shown.
  • the dopant-containing paste 21 is easier to absorb moisture than the vitreous formed on the surface of the p-type silicon substrate 2.
  • the vitreous layer (the lump after the phosphorus compound is dissolved), which is a residue of the dopant-containing paste 21 after the second diffusion process, absorbs moisture in the atmosphere, the dopant is added to the region other than the printing region. The residue of the containing paste 21 spreads and protrudes from the desired print pattern.
  • the removability of the vitreous layer formed on the surface of the p-type silicon substrate 2 becomes nonuniform, and the uniformity of the subsequent antireflection film 4 is also affected. Therefore, especially in the season with high humidity, it is necessary to pay attention to the moisture absorption of the dopant-containing paste 21, and it is necessary to immediately carry out the post-process after the end of the second diffusion process.
  • pn separation step Next, pn separation is performed in order to electrically insulate the back aluminum electrode 7 which is a p-type electrode and the light-receiving surface side electrode 12 which is an n-type electrode, which will be formed later (FIG. 3-4, step). S40). Since n-type impurity diffusion layer 3 is uniformly formed on the surface of p-type silicon substrate 2, the front surface and the back surface are in an electrically connected state. Therefore, when the back aluminum electrode 7 (p-type electrode) and the light-receiving surface side electrode 12 (n-type electrode) are formed as they are, the back aluminum electrode 7 (p-type electrode) and the light-receiving surface side electrode 12 ( n-type electrode) is electrically connected.
  • the second n-type impurity diffusion layer 3b formed in the end face region of the p-type silicon substrate 2 is etched away by dry etching to perform pn separation.
  • a method for removing the influence of the second n-type impurity diffusion layer 3b there is a method of performing end face separation with a laser.
  • the vitreous layer formed on the surface of the p-type silicon substrate 2 in the second diffusion step is removed by immersing the p-type silicon substrate 2 in, for example, a hydrofluoric acid solution and then performing a water washing treatment.
  • a pn junction is formed by the semiconductor substrate 2 made of p-type silicon as the first conductivity type layer and the n-type impurity diffusion layer 3 as the second conductivity type layer formed on the light receiving surface side of the semiconductor substrate 2.
  • a semiconductor substrate 11 having the structure shown in FIG.
  • n-type impurity diffusion layer 3 a selective emitter structure including a first n-type impurity diffusion layer 3a and a second n-type impurity diffusion layer 3b on the light receiving surface side of the p-type silicon substrate 2 is obtained.
  • the vitreous layer (the lump after the phosphorus compound is melted) that is a residue of the dopant-containing paste 21 remains thicker than the vitreous layer on the second n-type impurity diffusion layer 3b, so removal is carefully performed. There is a need to do.
  • the glassy layer resulting from the dopant-containing paste 21 remains on the surface of the p-type silicon substrate 2, the antireflection film 4 becomes cloudy when the antireflection film 4 is formed. And the reflectance in the antireflection film 4 becomes high, that is, the antireflection effect is lost, and the generated current in the solar cell 1 is reduced.
  • vitreous layer including the residue of the dopant-containing paste 21 can be discharged as normal factory waste water.
  • a silicon nitride (SiN) film having a uniform thickness is formed as the antireflection film 4 on the light receiving surface side (n-type impurity diffusion layer 3 side) of the semiconductor substrate 11 ( FIG. 3-6, step S60).
  • the film thickness and refractive index of the antireflection film 4 are set to values that most suppress light reflection.
  • the antireflection film 4 is formed using, for example, a plasma CVD method, and a mixed gas of silane (SiH 4 ) gas and ammonia (NH 3 ) gas is used as a raw material.
  • the antireflection film 4 may be formed by vapor deposition, thermal CVD, or the like. It should be noted that the antireflection film 4 formed in this way is an insulator, and simply forming the light receiving surface side electrode 12 thereon does not act as a solar cell.
  • an electrode is formed by screen printing (step S70).
  • the light-receiving surface side electrode 12 is produced (before firing). That is, an electrode material paste (silver paste) containing silver and glass frit in the shape of the front silver grid electrode 5 and the front silver bus electrode 6 is formed on the antireflection film 4 which is the light receiving surface of the semiconductor substrate 11 by screen printing. After application, the electrode material paste is dried. Next, an electrode material paste containing aluminum (aluminum paste) is applied to the entire back surface of the semiconductor substrate 11 by screen printing, and then the electrode material paste is dried.
  • the light receiving surface side electrode 12 is formed in alignment with the first n type impurity diffusion layer 3a.
  • the first n type impurity diffusion layer 3a is formed on the light receiving surface side of the semiconductor substrate 11 after the antireflection film 4 is formed.
  • the second n-type impurity diffusion layer 3b are difficult to identify.
  • FIG. 8 shows a semiconductor in which the antireflection film 4 is formed after the first n-type impurity diffusion layer 3a and the second n-type impurity diffusion layer 3b are formed by a two-stage continuous diffusion process (first diffusion process and second diffusion process).
  • the antireflection film 4 is formed after the first n-type impurity diffusion layer 3a and the second n-type impurity diffusion layer 3b are formed by the two-stage continuous diffusion process (first diffusion process and second diffusion process). A state in which infrared rays are irradiated on the light receiving surface side of the formed semiconductor substrate 11 is photographed with an infrared camera. This makes it possible to distinguish between the first n-type impurity diffusion layer 3a and the second n-type impurity diffusion layer 3b. This makes it possible to print the silver paste on the second n-type impurity diffusion layer 3b with high accuracy.
  • FIG. 9 shows a semiconductor in which an antireflection film 4 is formed after the first n-type impurity diffusion layer 3a and the second n-type impurity diffusion layer 3b are formed by a two-stage continuous diffusion process (first diffusion process and second diffusion process). It is the image which image
  • the region of the first n-type impurity diffusion layer 3a and the second n-type impurity diffusion layer 3b is identified by photographing with an infrared camera in the state where the light receiving surface side of the semiconductor substrate 11 is irradiated with infrared rays. can do.
  • the first n-type impurity diffusion layer 3a is photographed as a dark line.
  • the electrode paste on the light-receiving surface side and the back surface side of the semiconductor substrate 11 is simultaneously fired at a temperature of about 600 ° C. to 900 ° C., for example, 760 ° C. in the air atmosphere, so that the front side of the semiconductor substrate 11 is contained in the silver paste.
  • the antireflection film 4 is melted with the glass material, the silver material comes into contact with silicon and re-solidifies.
  • the surface silver grid electrode 5 and the surface silver bus electrode 6 as the light receiving surface side electrode 12 are obtained, and conduction between the light receiving surface side electrode 12 and the silicon of the semiconductor substrate 11 is ensured (FIG. 3-7). .
  • Such a process is called a fire-through method.
  • the aluminum paste reacts with the silicon of the semiconductor substrate 11 to obtain the back aluminum electrode 7, and the p + layer 8 is formed immediately below the back aluminum electrode 7.
  • the front silver grid electrode 5 and the back aluminum electrode 7 are shown, and the front silver bus electrode 6 is not shown.
  • the solar cell 1 according to the present embodiment shown in FIGS. 1-1 and 1-2 can be manufactured.
  • the order of arrangement of the paste, which is an electrode material, on the semiconductor substrate 11 may be switched between the light receiving surface side and the back surface side.
  • the dopant-containing paste 21 is applied to the p-type silicon substrate, and the first diffusion step is performed in a state where there is no dopant (phosphorus) diffusion source other than the dopant-containing paste 21.
  • the first n-type impurity diffusion layer 3a is formed.
  • the second diffusion step using phosphorus oxychloride (POCl 3 ) as a dopant (phosphorus) diffusion source is performed without removing the p-type silicon substrate 2 from the thermal diffusion furnace.
  • the second n-type impurity diffusion layer 3b is formed.
  • the p-type silicon substrate 2 is taken out of the thermal diffusion furnace in a two-stage continuous diffusion process including a first diffusion process using the dopant-containing paste 21 and a second diffusion process using phosphorus oxychloride (POCl 3 ). It is carried out without. Thereby, the diffusion process of the dopant (phosphorus) can be efficiently performed, and the first n-type impurity diffusion layer 3a and the second n-type impurity diffusion layer 3b can be easily formed separately to form the selective emitter structure. Accordingly, the selective emitter structure can be formed easily and at low cost without using a dedicated device and without performing a plurality of complicated processes.
  • a photoelectric transistor that achieves a reduction in contact resistance, an improvement in output current, and an improvement in open circuit voltage (Voc) between the light receiving surface side electrode and the n-type impurity diffusion layer by the selective emitter structure.
  • a solar cell excellent in conversion efficiency can be easily formed at low cost.
  • the solar cell module excellent in photoelectric conversion efficiency is realizable by forming several solar cells which have the structure demonstrated by said embodiment, and connecting adjacent solar cells electrically in series or in parallel.
  • one light receiving surface side electrode and the other back surface side electrode of adjacent solar cells may be electrically connected.
  • the method for manufacturing a solar cell according to the present invention is useful when manufacturing a solar cell excellent in photoelectric conversion efficiency easily and at low cost.
  • 1 solar cell 2 semiconductor substrate (p-type silicon substrate), 3 n-type impurity diffusion layer, 3a first n-type impurity diffusion layer, 3b second n-type impurity diffusion layer, 4 antireflection film, 5 surface silver grid electrode, 6 surface Silver bus electrode, 7 back aluminum electrode, 8 p + layer (BSF (Back Surface Field), 11 semiconductor substrate, 12 light receiving surface side electrode, 13 back surface side electrode, 21 dopant containing paste, 22 oxide film, 31 stainless steel mesh, 32 openings Part, 33 resin mesh, 34 openings, 51 thermal diffusion furnace, 52 p-type silicon substrate.
  • BSF Back Surface Field

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
PCT/JP2012/070402 2012-08-09 2012-08-09 太陽電池の製造方法 WO2014024297A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2012/070402 WO2014024297A1 (ja) 2012-08-09 2012-08-09 太陽電池の製造方法
CN201610982274.4A CN106409923A (zh) 2012-08-09 2012-08-09 太阳能电池的制造方法
JP2014529215A JP5905966B2 (ja) 2012-08-09 2012-08-09 太陽電池の製造方法
CN201280075188.5A CN104521002B (zh) 2012-08-09 2012-08-09 太阳能电池的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/070402 WO2014024297A1 (ja) 2012-08-09 2012-08-09 太陽電池の製造方法

Publications (1)

Publication Number Publication Date
WO2014024297A1 true WO2014024297A1 (ja) 2014-02-13

Family

ID=50067578

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/070402 WO2014024297A1 (ja) 2012-08-09 2012-08-09 太陽電池の製造方法

Country Status (3)

Country Link
JP (1) JP5905966B2 (zh)
CN (2) CN104521002B (zh)
WO (1) WO2014024297A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016146471A (ja) * 2015-01-29 2016-08-12 三菱電機株式会社 太陽電池の製造方法
WO2017002265A1 (ja) * 2015-07-02 2017-01-05 三菱電機株式会社 太陽電池セルおよび太陽電池セルの製造方法
US10446291B2 (en) 2015-09-29 2019-10-15 Toyo Aluminium Kabushiki Kaisha Paste composition

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115347091A (zh) * 2022-04-28 2022-11-15 厦门士兰明镓化合物半导体有限公司 一种发光二极管及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124692A (ja) * 2000-10-13 2002-04-26 Hitachi Ltd 太陽電池およびその製造方法
JP2010186900A (ja) * 2009-02-13 2010-08-26 Shin-Etsu Chemical Co Ltd 太陽電池及びその製造方法
JP2012134571A (ja) * 2010-11-17 2012-07-12 Hitachi Chem Co Ltd 太陽電池の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012507855A (ja) * 2008-10-29 2012-03-29 イノヴァライト インコーポレイテッド 多重ドープ接合を基板上に形成するための方法
CN101494253B (zh) * 2009-02-26 2010-07-14 晶澳（扬州）太阳能科技有限公司 一种选择性发射极太阳电池制造过程中的重扩散和轻扩散工艺
CN102468364A (zh) * 2010-11-05 2012-05-23 无锡尚德太阳能电力有限公司 一种选择性发射极太阳电池及其制作方法
CN102122683A (zh) * 2011-01-27 2011-07-13 东方电气集团(宜兴)迈吉太阳能科技有限公司 采用腐蚀浆料法制备单晶硅太阳能电池选择发射极的工艺

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124692A (ja) * 2000-10-13 2002-04-26 Hitachi Ltd 太陽電池およびその製造方法
JP2010186900A (ja) * 2009-02-13 2010-08-26 Shin-Etsu Chemical Co Ltd 太陽電池及びその製造方法
JP2012134571A (ja) * 2010-11-17 2012-07-12 Hitachi Chem Co Ltd 太陽電池の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016146471A (ja) * 2015-01-29 2016-08-12 三菱電機株式会社 太陽電池の製造方法
WO2017002265A1 (ja) * 2015-07-02 2017-01-05 三菱電機株式会社 太陽電池セルおよび太陽電池セルの製造方法
JPWO2017002265A1 (ja) * 2015-07-02 2017-10-05 三菱電機株式会社 太陽電池セルおよび太陽電池セルの製造方法
US10446291B2 (en) 2015-09-29 2019-10-15 Toyo Aluminium Kabushiki Kaisha Paste composition

Also Published As

Publication number Publication date
JPWO2014024297A1 (ja) 2016-07-21
CN104521002B (zh) 2016-11-23
CN104521002A (zh) 2015-04-15
CN106409923A (zh) 2017-02-15
JP5905966B2 (ja) 2016-04-20

Similar Documents

Publication Publication Date Title
JP5236914B2 (ja) 太陽電池の製造方法
US20100032012A1 (en) Solar cell and method of manufacturing the same
US20070215203A1 (en) Electrode Material, Solar Cell, And Method For Producing Solar Cell
JP5220197B2 (ja) 太陽電池セルおよびその製造方法
JP4980494B2 (ja) 太陽電池セルおよびその製造方法
US9997650B2 (en) Solar cell, manufacturing method thereof, and solar cell module
JP6410951B2 (ja) 太陽電池セルおよび太陽電池セルの製造方法
JP5777798B2 (ja) 太陽電池セルの製造方法
US20160233353A1 (en) Solar cell, manufacturing method thereof, and solar cell module
JP5905966B2 (ja) 太陽電池の製造方法
JP4937233B2 (ja) 太陽電池用基板の粗面化方法および太陽電池セルの製造方法
WO2011024587A1 (ja) 導電性ペースト、半導体装置用電極、半導体装置および半導体装置の製造方法
WO2012104997A1 (ja) 太陽電池セルとその製造方法、および太陽電池モジュール
JP6366840B2 (ja) 太陽電池セルおよび太陽電池セルの製造方法
JP2016046400A (ja) 太陽電池セルの製造方法
KR101464002B1 (ko) 태양 전지의 제조 방법
US9330986B2 (en) Manufacturing method for solar cell and solar cell manufacturing system
JP6270889B2 (ja) 太陽電池の製造方法
JP6125042B2 (ja) 太陽電池セルの製造方法
JP2011018748A (ja) 太陽電池セルの製造方法
WO2018008071A1 (ja) 太陽電池セルの評価用基板および太陽電池セルの評価方法
JP2014220462A (ja) 太陽電池の製造方法
JP2013225583A (ja) 太陽電池の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12882764

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2014529215

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12882764

Country of ref document: EP

Kind code of ref document: A1