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WO2014057612A1 - Film de graphène ainsi que procédé de fabrication de celui-ci, et film conducteur transparent mettant en œuvre ce film de graphène - Google Patents

Film de graphène ainsi que procédé de fabrication de celui-ci, et film conducteur transparent mettant en œuvre ce film de graphène Download PDF

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Publication number
WO2014057612A1
WO2014057612A1 PCT/JP2013/005432 JP2013005432W WO2014057612A1 WO 2014057612 A1 WO2014057612 A1 WO 2014057612A1 JP 2013005432 W JP2013005432 W JP 2013005432W WO 2014057612 A1 WO2014057612 A1 WO 2014057612A1
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Prior art keywords
substrate
graphene
film
graphene film
contact
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PCT/JP2013/005432
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English (en)
Japanese (ja)
Inventor
健志 藤井
まり子 佐藤
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富士電機株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO

Definitions

  • the present invention relates to a graphene film manufacturing method and a graphene film. More specifically, the present invention relates to a method for producing a graphene film and a graphene film that can be transferred onto a substrate having an uneven surface.
  • single-layer graphene the mobility of carriers (electrons) is about 15000 cm 2 / V ⁇ s, which is known to be higher by one digit or more than silicon. Focusing on this point, various industrial applications of single-layer graphene have been proposed. Its application destinations are diverse, including applications to transistors exceeding Si, spin injection devices, gas sensors for detecting single molecules, and the like. In particular, the application of graphene to conductive thin films and transparent conductive films has attracted attention and is being actively developed.
  • Non-Patent Document 3 reports that a graphene thin film with good film quality can be uniformly formed on a Cu foil by a CVD method. Specifically, by placing a Cu foil inside the CVD furnace, introducing hydrogen while raising the temperature to 1000 ° C., and supplying a hydrocarbon-based gas such as methane there, the surface of the Cu foil Graphene is deposited on the film.
  • the graphene thus formed As an application of a conductive thin film or a transparent conductive film, it is necessary to peel it off from the Cu surface and form it on a target substrate.
  • PMMA Polymethyl methacrylate
  • the Cu foil is removed by etching.
  • the graphene / PMMA film is attached to the final substrate so that the graphene is in contact with the substrate.
  • PMMA is dissolved in an organic solvent such as acetone, graphene can be formed on the surface of the final substrate.
  • the D peak of Raman spectroscopy which is said to be caused by crystal defects, is not observed, and exhibits very good crystallinity. That is, the conventional transfer method can be said to be an effective method when transferring to a flat substrate.
  • the inventors of the present application also attempted to produce a graphene film on a solar cell by using a conventional transfer method similar to Non-Patent Document 3. As a result, graphene could not be transferred onto the solar cell.
  • the inventor of the present application as a cause that could not be transferred, in the solar cell, in order to improve the light confinement efficiency in the electrode formed on the surface of the substrate or in contact with the substrate, texture that is uneven about 30 nm or more This is because the surface of the solar cell to be transferred (the surface of the semiconductor layer on the light receiving surface side) has a texture structure of about 30 nm.
  • the flatness of the graphene is about 1 nm, and the graphene can contact the convex part of the texture during the transfer, but the graphene does not contact the concave part.
  • the graphene peeled off due to insufficient contact between the graphene and the substrate.
  • the present invention aims to solve the above problems. That is, the present invention provides a method for uniformly transferring a graphene film on a substrate having graphene and unevenness by reducing or eliminating contact failure between the graphene and a surface having unevenness such as a texture. This opens up the possibility of applying graphene films to applications such as batteries.
  • the inventor of the present application notices that when graphene is transferred onto an uneven surface having a texture structure such as a solar cell, the unevenness on the surface may cause a reduction in transfer efficiency. It was. Therefore, the inventors of the present application searched for a method for efficiently adhering graphene to an uneven surface. Then, it was confirmed that the graphene itself has a concavo-convex structure so that the graphene fits the concavo-convex surface of the transfer target during transfer, and the efficiency of adhesion of graphene is improved and the transfer efficiency is improved.
  • the second substrate is preferably PMMA (polymethyl methacrylate) or PDMS (polydimethylsiloxane).
  • a graphene film is provided.
  • the first substrate and the second substrate are names used in the present application to distinguish the transition metal substrate and the temporary support film of the resin from each other or other substrates, respectively.
  • the third substrate is an arbitrary substrate of an arbitrary material as long as the first substrate and the second substrate are different substrates.
  • the third substrate is an object that is a substrate or base made of any material including the materials of the first and second substrates.
  • the graphene film formed on the surface of the third substrate is continuously used as a substrate to be supported thereafter. In that case, the third substrate is determined from the viewpoint of the application to which the graphene film is applied.
  • a layer on the light-receiving surface side of the thin film solar cell can be given.
  • This layer also inherits the irregularities formed on the substrate or the like and has irregularities of about 30 nm or more on the surface.
  • the graphene film is used as a transparent electrode layer of a thin film solar cell.
  • Patent Document 1 describes that in a thin-film solar cell made of an amorphous material, the height difference of peaks and valleys (unevenness) on the surface of the lower electrode layer, which is an electrode in contact with the substrate, is 50 nm to 150 nm.
  • the uppermost layer of the solar cell takes over the unevenness on the surface of the lower electrode layer, and the uppermost layer also has an unevenness of about 30 nm.
  • the graphene film having unevenness can be used as a transparent conductive film of a solar cell.
  • the unevenness of the surface layer of the solar cell has randomness. For this reason, even if the first substrate is simply provided with regular irregularities and transferred, the graphene film may not fit well on the surface layer of the solar cell.
  • the unevenness pattern existing in the surface layer on the light-receiving surface side of the solar cell is taken in advance and the unevenness is provided on the surface of the first substrate using this mold, the unevenness of the graphene film is Fits the irregularities of the surface layer of the solar cell.
  • the upper limit is 10 layers. In that case, it is advantageous that the light transmittance in the film thickness direction of the graphene film provided in the present invention is 70% or more.
  • Graphene refers to a substance in a state in which carbon atoms are bonded to each other by sp 2 bonds and formed into a film or a layer having one or more atomic layers. Therefore, in the present application, the meaning of the term graphene includes not only single-layer graphene but also a sheet of carbon atoms including a plurality of atomic layers. In addition, when calling it a graphene film
  • Concavity and convexity refers to a structure raised from a flat state. Therefore, there are various shapes in the method of raising, and it is not limited. In the present application, it refers to a portion having a height of approximately 30 nm or more.
  • “contacting” and “pasting” do not necessarily include only those that are in close contact with each other. For example, what is placed, supported, or placed on the substrate while taking over the unevenness of the substrate is also included in “contact” and “stick”.
  • the use of a graphene film having irregularities on the irregularities on the surface which is the cause of the decrease in transfer efficiency, improves the adhesion efficiency of the graphene film, and the graphene film having high transfer efficiency This opens up the possibility of applying the graphene film to any application that uses electrical conductivity.
  • FIG. 1 is an explanatory diagram of each step of the process of the graphene film manufacturing method of the present embodiment.
  • the surface of the first substrate 11 that is a transition metal substrate is etched to have a concavo-convex of about 30 nm or more like the surface 11a shown in FIG. Forming a surface.
  • a graphene 10 having a sheet-like crystal structure of one or more carbon atoms is grown by supplying a source material containing carbon to the surface 11a.
  • the graphene 10 can be grown by a CVD method or a PVD method (physical vapor deposition).
  • the CVD method heats a transition metal substrate maintained at various conditions such as an ultrahigh vacuum of 1 ⁇ 10 ⁇ 7 Pa or less, a low pressure of about 10 to 10,000 Pa, and an atmospheric pressure to about 600 to 1200 ° C.
  • a hydrocarbon gas such as methane containing carbon atoms is sprayed onto the transition metal substrate in that state. By this treatment, methane gas is cracked (dissociative adsorption). Carbon atoms derived from the supplied gas receive a catalytic effect on the surface of the transition metal substrate, migrate to a long distance, reach the nucleus of graphene, and graphene grows.
  • the transition metal substrate may be formed of a thin film with the surface being a single crystal surface.
  • graphene can be grown by MBE (molecular beam epitaxy) or PLD (pulse laser deposition) as a method for growing graphene by the PVD method.
  • MBE molecular beam epitaxy
  • PLD pulse laser deposition
  • atomic carbon is generated by heating graphite to 1200 to 2000 ° C. in an ultra-high vacuum, and the atomic carbon converted into a molecular beam is supplied onto the surface of the heated transition metal substrate.
  • the graphene film is formed by the catalytic effect of the transition metal substrate.
  • PLD ablate graphite with an KrF excimer laser in an ultra-high vacuum, so that instantaneously evaporated carbon is supplied in a molecular beam state. When the carbon molecular beam is supplied to the heated transition metal substrate, graphene is formed on the surface of the transition metal substrate.
  • the transition metal for the first substrate described above Fe, Co, Ni, Cu, Mo, Ru, Rh, Pd, W, Re, Ir, Pt, or an alloy thereof can be used.
  • the form of the transition metal substrate can be a foil, a thin film, a bulk, and a single crystal or a polycrystal thereof. The most typical of these transition metal substrates is copper foil.
  • the transition metal substrate serves as a support substrate for graphene and, as described above, serves as a catalyst for cracking (decomposing) the supplied carbon-containing gas and promotes the growth of graphene having a sheet-like crystal structure. Indicates.
  • a second substrate 12 that is a resin support film is formed so as to be in contact with the surface of the graphene 10.
  • the second substrate 12 is formed while maintaining the state of the graphene 10 formed on the surface of the first substrate.
  • the second substrate 12 is made of a material capable of holding the graphene 10.
  • the most typical second substrate 12 is obtained by volatilizing a solvent or polymerizing a precursor from a precursor such as a solvent-soluble resin dissolved in a solvent or a prepolymer before becoming a polymer. It is solidified.
  • the resin support film to be the second substrate 12, for example, can exhibit a certain degree of support function, is not affected by the subsequent removal of the first substrate 11, and is final if necessary.
  • the material is selected from materials satisfying the condition that it can be removed without affecting the graphene 10.
  • the graphene 10 at this stage is sandwiched between the first substrate 11 (transition metal substrate) and the second substrate 12 (resin support substrate) (FIG. 1D).
  • the transition metal substrate which is the first substrate 11 is removed.
  • etching with an acid can be employed. This removal process is selected from a technique that does not alter the graphene 10.
  • the graphene 10 is attached to the second substrate 12 and the surface is exposed.
  • the surface of the graphene 10 on the side in contact with the first substrate 11 faces the third substrate 13, which is another substrate, with respect to the surface 13 a of the third substrate 13. paste. Concavities and convexities called texture are formed on the surface 13 a of the third substrate 13.
  • the third substrate 13 is a substrate different from both the first substrate 11 and the second substrate 12.
  • the second substrate 12 is removed as shown in FIG.
  • any technique that hardly affects the graphene 10 and the third substrate 13 can be employed.
  • the third substrate 13 is an inorganic substance such as a silicon substrate or a glass substrate
  • the second substrate 12 can be removed with an organic solvent that dissolves the material of the resin support substrate.
  • the material and properties of the second substrate 12 (resin support film) are those that can be removed in this step.
  • the graphene film can be manufactured by forming the graphene 10 on the surface of the third substrate 13.
  • a technique of scraping the metal uniformly and randomly is optimal.
  • the method it is desirable to use wet etching with acid or dry etching by reactive ion etching.
  • the height of the etching needs to be larger than the unevenness of the third substrate, which is a transfer target, and a structure called a texture such as a solar cell generally has an unevenness of 30 nm or more. 30 nm or more is desirable.
  • the second substrate 14 (resin support substrate) employed in the present embodiment can be made of any material that can satisfy the above-described conditions.
  • a suitable material for the second substrate 12 is PMMA (polymethyl methacrylate) or PDMS (polydimethylsiloxane).
  • PMMA and PDMS can be easily applied with a solution dissolved in a solvent, and it is also easy to volatilize the solvent to form a temporary support film of resin. Furthermore, it can withstand a process (etching process) for removing the first substrate 11 and can easily remove the second substrate itself. Furthermore, a film as much as required for transferring the graphene 10 can be formed.
  • PMMA and PDMS satisfying these conditions are suitable materials used as the second substrate 12 (resin support substrate) in the present embodiment.
  • the shape of the unevenness of the first substrate is inherited, and has the same unevenness of about 30 nm. Therefore, when transferred onto the uneven third substrate, the graphene film The unevenness of the third substrate and the unevenness of the third substrate enter alternately to fit the shape, and the graphene film can adhere to the third substrate, so that the graphene film can be transferred efficiently.
  • the height index of the unevenness can be calculated from a height difference measured by, for example, a scanning electron microscope, a transmission electron microscope, an atomic force microscope, or the like.
  • the unevenness of the texture structure of a general third substrate using this method is, for example, about 30 nm in the semiconductor layer on the light receiving surface side of the solar cell. Therefore, in the preferable configuration of the graphene film, the unevenness is preferably 30 nm or more.
  • the graphene film provided in the present embodiment preferably has 1 or more and 10 or less atomic layers of graphene.
  • the reason is related to the application of the graphene film.
  • Graphene is known to exhibit high mobility, particularly in single layer graphene.
  • the graphene film is used as a transparent conductive film or the like in applications where light transmission is required, there is an upper limit in the number of layers from the viewpoint of transmittance.
  • the upper limit is 10 layers. It is.
  • Example 1 is a sample of a graphene film manufactured according to the above-described embodiment.
  • the materials, amounts used, ratios, processing contents, processing procedures, directions of elements or members, specific arrangements, and the like shown in the following examples can be appropriately changed without departing from the gist of the present invention. Therefore, the scope of the present invention is not limited to the following specific examples. Further, reference is made to the already described drawings.
  • the first substrate 11 As the first substrate 11, a 10 mm square Cu polished (chemical mechanical polished) Cu foil (100 ⁇ m thick) was employed. The arithmetic average roughness Ra of this substrate is about 1 nm.
  • the first substrate 11 is immersed in a mixed solution of 5 ml of hydrochloric acid, 5 ml of hydrogen peroxide, and 25 ml of water for 10 seconds, washed with running water for 5 minutes, and dried, so that the surface of the first substrate 11 has 30 nm unevenness 11a. Formed.
  • the first substrate 11 was placed in a CVD reactor and evacuated to 1 ⁇ 10 ⁇ 3 Pa. Then, the first substrate 11 was heated to 1000 ° C.
  • the substrate was immersed in a mixed solution of 10 ml of hydrochloric acid, 10 ml of hydrogen peroxide and 50 ml of pure water, and etched until the Cu foil as the first substrate 11 was completely removed. Then, the laminated body of the graphene 10 and the 2nd board
  • the third substrate 13 was pressed against the surface of textured SnO / glass (Asahi-U manufactured by Asahi Glass) and heated at 180 ° C. for 30 minutes. By this heating, the PMMA was softened, and the graphene 10 was brought into close contact with the SnO surface of the third substrate 13 that was a SnO / glass substrate.
  • the PMMA of the second substrate 12 was removed from the surface of the graphene 10 by immersing in acetone for 5 minutes. Further, the sample was washed with ultrapure water for 5 minutes to obtain a graphene film sample in which the graphene 10 was disposed on the third substrate 13 as shown in FIG.
  • Example 1 which is a graphene film manufactured according to the present embodiment was observed. It was found that the graphene was transferred uniformly. However, in the micrograph, the difference in density between the graphene and the ground is small, and it is difficult to illustrate in black and white, so illustration is omitted. Thus, the effect of the present invention was demonstrated.

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Abstract

L'invention a pour objectif de transférer uniformément un film de graphène sur un substrat possédant un graphène et des irrégularités, en réduisant ou supprimant les défauts de connexion entre le graphène et une surface sur laquelle se trouvent des irrégularités telles que des irrégularités de structure, ou similaire. Le procédé de l'invention comporte : une étape au cours de laquelle les irrégularités sont formées à la surface d'un premier substrat consistant en un substrat de métal de transition ; une étape au cours de laquelle au moins une couche de graphène qui possède une structure cristalline sous forme de feuille d'atomes de carbone, est mise en croissance par alimentation dudit premier substrat en substance de matière première contenant du carbone ; une étape au cours de laquelle est formé un second substrat qui est en contact avec la surface de graphène, et qui consiste en un film de support temporaire de résine ; une étape au cours de laquelle ledit premier substrat est retiré ; une étape au cours de laquelle un stratifié dudit second substrat et dudit graphène s'oppose à la surface d'un troisième substrat, et ce stratifié est collé vers une surface dudit graphène côté contact dudit premier substrat ; et une étape au cours de laquelle ledit second substrat est retiré.
PCT/JP2013/005432 2012-10-09 2013-09-13 Film de graphène ainsi que procédé de fabrication de celui-ci, et film conducteur transparent mettant en œuvre ce film de graphène WO2014057612A1 (fr)

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Cited By (4)

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JP2015227507A (ja) * 2014-06-02 2015-12-17 コリア インスティチュート オブ エナジー リサーチ 窒素ドープされた炭素表面を有する金属−炭素ハイブリッド複合体及びその製造方法
JP2017512181A (ja) * 2015-03-26 2017-05-18 中国科学院上海微系統与信息技術研究所 グラフェンの成長方法
CN114296571A (zh) * 2021-12-14 2022-04-08 重庆石墨烯研究院有限公司 一种显示屏石墨烯触控膜的制备方法
CN114800989A (zh) * 2022-04-21 2022-07-29 常州富烯科技股份有限公司 石墨烯纤维、模具、石墨烯纤维增强导热垫片、制备方法

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Cited By (7)

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Publication number Priority date Publication date Assignee Title
JP2015227507A (ja) * 2014-06-02 2015-12-17 コリア インスティチュート オブ エナジー リサーチ 窒素ドープされた炭素表面を有する金属−炭素ハイブリッド複合体及びその製造方法
US9700877B2 (en) 2014-06-02 2017-07-11 Korea Institute Of Energy Research Metal-carbon hybrid composite having nitrogen-doped carbon surface and method for manufacturing the same
JP2017512181A (ja) * 2015-03-26 2017-05-18 中国科学院上海微系統与信息技術研究所 グラフェンの成長方法
CN114296571A (zh) * 2021-12-14 2022-04-08 重庆石墨烯研究院有限公司 一种显示屏石墨烯触控膜的制备方法
CN114296571B (zh) * 2021-12-14 2024-04-09 重庆石墨烯研究院有限公司 一种显示屏石墨烯触控膜的制备方法
CN114800989A (zh) * 2022-04-21 2022-07-29 常州富烯科技股份有限公司 石墨烯纤维、模具、石墨烯纤维增强导热垫片、制备方法
CN114800989B (zh) * 2022-04-21 2023-08-11 常州富烯科技股份有限公司 石墨烯纤维、模具、石墨烯纤维增强导热垫片、制备方法

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