WO2013122020A1 - Charged particle beam device and operation condition setting device of charged particle beam device - Google Patents

Abstract

The purpose of the invention is to provide an electron microscope device and a dimensional measurement method in said device that, when measuring an arbitrarily defined position of multiple specimens of the same shape, accurately detects a desired measurement pattern and improves device throughput, without detecting an addressing pattern with each measurement. When measuring the arbitrarily defined position of the multiple specimens of the same shape, the measurement of the first specimen uses the addressing pattern to accurately move a field of view to a measurement pattern. When the addressing pattern and measurement pattern for this measurement are detected, a field of view drift that is a drift between a targeted coordinate and an actual coordinate is measured. When the next specimen is measured, said field of view drift is applied to a target coordinate existing when a pattern for said actual coordinate is measured.

Description

Charged particle beam device and operation condition setting device for charged particle beam device

The present invention relates to a charged particle beam apparatus and a charged particle beam apparatus recipe creation apparatus, and more particularly to a charged particle beam apparatus that specifies a desired pattern at high speed and with high accuracy, and an operation condition setting apparatus for the charged particle beam apparatus. .

With the recent miniaturization of semiconductor elements, not only manufacturing apparatuses but also inspection and evaluation apparatuses are required to have high precision corresponding thereto. As a measuring device for evaluating whether or not the shape dimension of a pattern formed on a semiconductor wafer is correct, it may be referred to as a scanning electron microscope having a length measuring function (hereinafter referred to as a length measuring SEM (Scanning Electron Microscope)). )

As disclosed in Patent Document 1, the length measurement SEM irradiates an electron beam onto a wafer, performs image processing on the obtained secondary electron signal, determines the edge of the pattern from the change in brightness, and measures the dimensions. Is a device that derives

The measurement object of the length measurement SEM is very fine, and it is difficult to position the measurement object pattern directly on the irradiation position of the electron beam. As a method for performing such alignment with high accuracy, an image with a magnification lower than the magnification used when performing dimension measurement (an image with a large field of view) is acquired, and the positional relationship with the measurement target pattern is known from the obtained image. There is an alignment method using a pattern. Patent Documents 1 and 2 disclose a technique for moving the visual field using such a pattern for alignment (hereinafter also referred to as an addressing pattern).

Also, in Patent Document 3, a plurality of patterns whose relation to the target position is known are registered as models, a pattern similar to the registered model is detected, and the pattern position and a pre-registered offset are used. A technique for detecting a target position on a sample is described.

Further, in Patent Document 4, when there is no object at the target location, the sample stage is operated so that the field of view moves in a spiral shape until the target object is found around the first field of view. Has been explained.

JP-A-9-166428 (paragraph “0012” -paragraph “0016”, FIG. 4) JP-A-3-291842 JP-A-9-245709 JP-A-6-283125

An alignment method using an addressing pattern as disclosed in Patent Documents 1 to 3 is very effective as a method for aligning a visual field with a fine target pattern. However, since it is necessary to detect a pattern that is not directly related to measurement, the throughput of the apparatus is reduced as compared with a case where such a process is not performed. On the other hand, as in Patent Document 4, when the target portion is not in the first field of view, the method of searching for the surrounding fields one by one takes a long time to search for the target pattern. As described above, if the position of the pattern is to be specified accurately, a corresponding search time is required, and there is a trade-off between increasing the speed of pattern measurement and increasing the accuracy of specifying the pattern.

Hereinafter, a charged particle beam apparatus and an operation condition setting apparatus for the charged particle beam apparatus aiming at achieving both high throughput of the apparatus and high accuracy of pattern identification will be described.

As one aspect for achieving the above object, image data and addressing pattern data formed based on charged particles emitted from a sample by irradiation with a charged particle source and a charged particle beam emitted from the charged particle source. In the charged particle beam apparatus provided with a control device that performs alignment to a target position on the sample using the position information of the addressing pattern registered in advance and the position when the addressing pattern is detected The present invention proposes a charged particle beam apparatus that obtains position information of the target position based on a difference from information.

Also, we propose a charged particle beam operating condition setting device that obtains the position information of the target position based on the difference between the position information of the addressing pattern and the position information when the addressing pattern is detected.

According to the above configuration, it is possible to achieve both high throughput and high accuracy of pattern identification.

It is a figure which shows the whole structure of an electron microscope apparatus. It is a figure explaining the dimension measuring method in an electron microscope apparatus. It is a flowchart which shows the execution procedure of the sample size measuring method of the 1st sheet in an electron microscope apparatus. It is another flowchart which shows the execution procedure of the sample size measuring method of the 1st sheet in an electron microscope apparatus. It is another flowchart which shows the execution procedure of the sample size measuring method of the 1st sheet in an electron microscope apparatus. It is a flowchart which shows the execution procedure of the sample dimension measuring method after the 2nd sheet in an electron microscope apparatus. It is another flowchart which shows the execution procedure of the sample dimension measuring method after the 2nd sheet in an electron microscope apparatus. It is another flowchart which shows the execution procedure of the sample size measuring method after the 2nd sheet in an electron microscope apparatus. It is a combination example of the flowchart which shows the execution procedure of the dimension measuring method in an electron microscope apparatus. It is a schematic block diagram of a semiconductor measurement system. The figure explaining the calculation method of the signal required for the target position for reaching a measurement position, or the movement to a target position, without using an addressing pattern.

In a length measurement SEM, which is one of semiconductor inspection or measurement devices, a wafer is irradiated with an electron beam, the obtained secondary electron signal is image-processed, and the edge of the pattern is discriminated from the change in brightness to determine the dimensions. Is derived. At this time, in order to comply with the 35 nm node design rule, it is preferable to perform dimension measurement at an observation magnification of 300,000 times or more, and the total size of the sample image display screen at this time is 500 nm or less on one side on the wafer. It corresponds to a square. In order to position a pattern to be measured (hereinafter referred to as a measurement pattern) at an arbitrary position on the display screen, visual field positioning accuracy of at least several tens of nm level is required. The problem here is that even if the resolution of the sample stage position detector (for example, laser length measuring instrument) is on the order of sub-nm, the stage and stage position are detected due to continuous stage operation and environmental temperature changes. When the mirror for thermal expansion is gradually thermally expanded and deformed, the relative position of the wafer and the stage position detection mirror is also gradually changed, and the measurement pattern cannot be positioned at an arbitrary position on the display screen.

Similarly, the same applies when the position of the laser interferometer gradually shifts due to the influence of a temperature change or the like.

In the position specifying method using an addressing pattern, an image lower than the dimension measurement magnification (for example, 1 to 20,000 times) is first acquired, and the positional relationship with the measurement pattern is known from the obtained image data. A specific addressing pattern is detected, and the sample stage is moved or the electron beam scanning position is offset based on the position information of the characteristic pattern. It is possible to position to. With this technique, even when there are many other patterns very similar to the measurement pattern in the vicinity of the measurement pattern, it is possible to accurately extract the measurement pattern and perform dimension measurement.

In this embodiment, in order to achieve high throughput while performing high-accuracy alignment, when measuring a plurality of measurement objects on which the same pattern is formed on the design data, an addressing pattern is not detected each time. An apparatus for positioning the field of view on the measurement object will be described.

More specifically, when measuring a plurality of arbitrary positions of a sample having the same shape, the first sample is measured by accurately moving the visual field to the measurement pattern using an addressing pattern. At the time of detecting the addressing pattern and measurement pattern at this time, the visual field shift amount between the target coordinate and the actual coordinate is measured, and the next sample is reflected in the target coordinate when the pattern of the same coordinate is measured. Thereafter, when measuring the second and subsequent samples, the movement to the measurement pattern is performed directly without going through the movement to the addressing pattern. At this time, the visual field is moved to the coordinates reflecting the visual field shift amount when the measurement pattern at the same position of the sample measured immediately before is measured.

Further, in another aspect, in the case of measuring a plurality of arbitrary positions of the sample having the same shape, in the process of accurately moving the visual field to the measurement pattern using the addressing pattern when measuring the first sample, When moving the addressing pattern, measure the visual field deviation between the target coordinates and the actual coordinates, and if the visual field deviation is within the threshold value for a set number of times, pass the addressing pattern from the next measurement point. Without changing the field of view directly to the measurement pattern. Further, this measurement method may be applied to the second and subsequent samples.

Further, in another aspect, in the case of measuring a plurality of arbitrary positions of the sample having the same shape, in the process of accurately moving the visual field to the measurement pattern using the addressing pattern when measuring the first sample, When moving the addressing pattern, measure the amount of visual field deviation between the target coordinates and the actual coordinates. If the visual field deviation is within the set coordinates and within the threshold value, the next measurement point does not pass through the addressing pattern. Move the field of view directly to the measurement pattern. Further, this measurement method may be applied to the second and subsequent samples.

By measuring the sample based on the processing as described above, it is possible to improve the throughput as compared with the technique of specifying the scanning position using the addressing pattern for all patterns.

According to the above configuration, the electron beam scanning position can be moved to the measurement target pattern at high speed, which is effective in speeding up the pattern measurement.

Hereinafter, a position specifying method that selectively uses an addressing pattern will be described in more detail with reference to the drawings. Here, a length measurement SEM (Critical Dimension-Scanning Electron Microscope) will be described as an example of an electron microscope.

FIG. 1 is an overall configuration diagram of an electron microscope apparatus. The electron beam 102 emitted from the electron gun 101 is narrowed down by the objective lens 103 and irradiated onto the sample 104. The deflection signal generated by the deflection signal generator 105 can change the scanning range and the scanning position on the sample 104 by the computer 106, the deflection coil 108 is excited by the deflection amplifier 107, and the electron beam 102 is moved on the sample 104. 2D scanning is performed. A signal (secondary electron signal, reflected electron signal, etc.) generated by the electron beam 102 incident on the sample 104 is converted into an electric signal by the detector 109, subjected to signal processing by the image control unit 110, and an image display CRT 111. Sent to. The computer 106 can read all or a part of the image data in the image control unit 110, and although not shown, the cross hair cursor can be arbitrarily moved on the image display CRT 111 corresponding to the image data. Position information (coordinate information) can be acquired.

On the other hand, the sample stage 112 on which the sample 104 is placed is moved by the stage control unit 113, whereby the scanning position of the electron beam 102 on the sample 104 is changed and the field of view is moved. The same visual field movement can be performed by exciting the image shift coil 115 by the DC amplifier 114 and offsetting the scanning position of the electron beam 102 on the sample 104. The amount of visual field movement is controlled by the computer 106 (control device).

In the above configuration, the following processing is performed. First, a procedure for registering a measurement pattern and an addressing pattern will be described with reference to FIGS. First, a sample 104 (for example, a wafer) including a measurement pattern to be measured is placed on the sample stage 112, and an electron beam 102 is irradiated to display an image on the image display CRT 111.

Next, the sample stage 112 is moved, the addressing pattern is displayed in the display image, the cross hair cursor is set, and a registration instruction is issued to the computer 106. The computer 106 acquires and stores the cursor position information, and stores a part of the image data centered on the cursor position as an addressing pattern. The display image magnification at this time is lower than the dimensional measurement magnification (10,000 to 20,000 times), and the addressing pattern is used at a position adjacent to the measurement pattern (about several μm). The series of procedures described above is an addressing pattern registration procedure (see FIG. 2A).

As the addressing pattern, a pattern that is qualified as an addressing pattern should be selected as compared with the measurement pattern, and it is desirable to select a pattern larger than the measurement pattern. Furthermore, it is desirable to select a more unique shape.

Next, a cross hair cursor is placed on the measurement pattern, and a registration instruction is issued to the computer 106. The computer 106 acquires and stores the cursor position information and the measurement pattern image, and this time, from the position information and the cursor position information of the addressing pattern stored during the addressing pattern registration procedure, the target measurement pattern and Find and store the relative distance between addressing patterns. The magnification of the display image at this time is performed at a dimension measurement magnification (about 300,000 times). The above procedure is a measurement pattern registration procedure (see FIG. 2B). And the above procedure should just be performed once at the beginning of a detection process.

FIG. 10 is a diagram showing the measurement and inspection system including the SEM in more detail. This system includes an SEM main body 1001, an A / D converter 1004, and a control device (including an arithmetic device) 1005.

The SEM main body 1001 irradiates a sample such as a wafer on which an electronic device is manufactured with an electron beam, captures electrons emitted from the sample with a detector 1003, and converts them into a digital signal with an A / D converter 1004. The digital signal is input to the control device 1005 and stored in the memory 1007, and image processing according to the purpose is performed by image processing hardware such as a CPU, ASIC, or FPGA incorporated in the image processing unit 1006. The image processing unit 1006 also has a function of creating a line profile based on the detection signal and measuring a dimension between peaks of the profile.

Further, the control device 1005 is connected to an input device 1014 having an input means, and a display device provided in the input device 1014 displays a GUI (Graphical User Interface) that displays images, inspection results, and the like to the operator. Etc.

It should be noted that part or all of the control and processing in the control device 1005 can be assigned to a CPU or an electronic computer equipped with a memory capable of storing images and processed and controlled. Also, the input device 1014 creates an imaging recipe including the coordinates of an electronic device required for inspection, a pattern matching template used for positioning, imaging conditions, etc. manually or by utilizing electronic device design data It also functions as an imaging recipe creation device.

The input device 1014 includes a template creation unit that cuts out a part of a diagram image or SEM image formed based on design data and uses it as a template. The created template is built in the control device 1005. It is registered in the memory 1007 as a template matching template in the matching processing unit 1008. Template matching is a technique for specifying a location where a captured image to be aligned and a template match based on matching degree determination using a normalized correlation method or the like, and the matching processing unit 1008 performs matching degree determination. Based on the above, a desired position of the captured image is specified.

The deviation amount calculation unit 1009 evaluates the deviation amount based on the principle illustrated in FIG. The position information (x1, y1) of the addressing pattern 1101 is information registered in advance in the memory 1007 as the position where the addressing pattern exists. When the visual field movement is performed based on such coordinate information or visual field movement information (a deflection amount of the deflector, a voltage value applied to the deflector, or a current amount) that has been converted in advance based on the coordinate information, The actual position of the addressing pattern 1103 may not be at (x1, y1). The deviation amount calculation unit 1009 measures this difference. Specifically, the addressing is performed from the difference (Δxd1, Δyd1) between the reference position (for example, the center of the display screen) set on the image data as the position where (x1, y1) exists and the position where the actual addressing pattern 1103 exists. The position (x1 + Δxd1, y1 + Δyd1) where the pattern 1103 exists is obtained. Furthermore, (x1 + Δxd1 + Δxd, y1 + Δyd1 + Δyd) is obtained from (x1 + Δxd1, y1 + Δyd1) and (Δxd, Δyd) stored in advance as a relative distance between the addressing pattern and the measurement target pattern 1102. This value becomes the target position when the field of view is moved to the measurement point of the same coordinate on the second wafer. Further, the field of view is moved to the second and subsequent measurement points by adding (Δxd1 + Δxd, Δyd1 + Δyd) obtained previously to the position information (x1, y1) of the addressing pattern 1101 corresponding to the second and subsequent measurement points. It is also possible to set it as the target position when making it. Since the addressing using the addressing pattern data is not performed at the time of the movement, the visual field movement using the target position is performed instead of the addressing process at the time of alignment of the second sheet or the second and subsequent positions. The movement signal generator 1011 generates a control signal (deflection voltage, deflection current) based on the coordinate information. This information is registered in the memory 1007. Further, the visual field movement amount (deflection current, voltage, etc.) may be registered instead of the coordinate information.

The measurement processing execution unit 1012 performs measurement of the specified measurement target pattern without performing addressing or addressing. The output data creation unit 1013 outputs an error message as described later on the display screen of the input device 1014.

In the embodiment described below, a control device mounted on the SEM or a control device (input device 1014) connected to the SEM via a communication line or the like will be described as an example. However, the processing described below may be performed by a computer program using a general-purpose arithmetic device that executes image processing. Furthermore, the technique described later can be applied to other charged particle beam apparatuses such as a focused ion beam (FIB) apparatus.

The embodiment described below relates to an addressing device, a program for causing a computer to execute addressing, and a storage medium for storing the program.

Next, with reference to FIG. 3, FIG. 4, and FIG. 5, the procedure for measuring the dimension of the first sample using the electron microscope apparatus will be described in detail.

FIG. 3 is an example of a flowchart showing an execution procedure of the dimension measuring method for the first sample in the electron microscope. According to the flowchart shown in FIG. 3, first, based on the position information of the measurement pattern registered in advance in step S10, the visual field is moved to the addressing pattern, and the addressing pattern is detected in step S20. In step S30, collation with an addressing pattern registered in advance is performed. Since the addressing pattern is set larger than the length measurement pattern, the display image magnification at this time is low, and the required value for visual field positioning accuracy is not strict. Here, when the consistency is obtained (Y), the process proceeds to step S40, and the visual field deviation amount between the target coordinates and the actual coordinates (the visual field deviation amount with the pre-registered image) is measured. The visual field shift amount measured here is reflected in the target coordinates when the addressing pattern of the same coordinates is measured when the next sample is measured.

Next, in step S50, the visual field is moved to the measurement pattern based on the relative distance between the addressing pattern and the measurement pattern. The moving means at this time may be either the sample stage 112 or the electron beam scanning position offset, but the latter is desirable in consideration of the apparatus throughput (the registration of the addressing pattern at the position adjacent to the measurement pattern is the electron beam scanning position) This is to enable visual field movement with an offset). Subsequently, the process proceeds to the measurement pattern detection process in step S60, and collation with the measurement pattern registered in advance is performed in step S70. The display image magnification at this time is a dimension measurement magnification.

Here, when the consistency is obtained (Y), the process proceeds to step S80, and the visual field shift amount between the target coordinates and the actual coordinates is measured. The field deviation amount measured here is reflected in the target coordinates when measuring the measurement pattern of the same coordinates when measuring the next sample. Next, the process proceeds to step S90, dimension measurement processing is performed, and dimension measurement is terminated.

If consistency is not obtained in the collation judgment in step S30 and step S70 (N), it is judged that the pattern is not correctly formed on the sample, and the process proceeds to step S120 and step S130, respectively, and an error message is displayed. The image is displayed on the image display CRT 111, and the dimension measurement is completed.

FIG. 4 is a flowchart of another example showing the execution procedure of the dimension measurement method for the first sample in the electron microscope according to the present embodiment. In the flowchart shown in FIG. 4, the rough flow of measurement is the same as that in FIG. 3, but it is determined in step S4100 whether the deviation is within the threshold. Furthermore, when the set number of times is within the threshold value, the process proceeds from the next measurement point to the dimension measurement flowchart of FIG. The feature of the flowchart shown in FIG. 4 is that the field of view moves directly to the measurement pattern without shifting the field of view to the addressing pattern from the middle of the dimension measurement of the first sample, so that the throughput of the apparatus is improved. Further, the operator can arbitrarily set the threshold value and the set number of times shown here.

FIG. 5 is a flowchart of still another example showing the execution procedure of the dimension measurement method for the first sample in the electron microscope according to the present embodiment.

In the flowchart shown in FIG. 5, the rough flow of the measurement is the same as that in FIG. 4, and it is determined in step S5100 whether the deviation is within the threshold. Further, when all the set coordinates are within the threshold value, the process proceeds from the next measurement point to the dimension measurement flowchart of FIG. The characteristic of the flowchart shown in FIG. 5 is that, for example, measurement of several representative points covering the entire sample area is performed in the first half of the measurement, and the stage and stage position detection mirror are thermally expanded and deformed due to continuous operation of the stage, environmental temperature change, etc. After confirming that there is no influence, the visual field can be moved directly to the measurement pattern without moving the visual field to the addressing pattern from the middle of the dimension measurement of the first sample. Further, the threshold value and the set coordinates shown here can be arbitrarily set by the operator.

Next, with reference to FIG. 6, FIG. 7, and FIG. 8, an electron microscope apparatus according to an embodiment of the present invention and a method for measuring the dimensions of the second and subsequent samples in the apparatus will be described in detail.

FIG. 6 is an example of a flowchart showing the execution procedure of the dimension measurement method for the second and subsequent samples in the electron microscope according to the present embodiment. According to the flowchart shown in FIG. 6, the visual field shift to the addressing pattern is not performed, and the visual field shift amount when the same position of the previous sample is measured when the visual field is moved to the measurement pattern in step S610 is reflected. Move the field of view to the coordinates.

Usually, when measuring multiple arbitrary positions of a sample with the same shape, it is often measured continuously, and the measurement time per sheet is from several tens of seconds to several minutes. The amount of visual field shift due to thermal expansion deformation of the stage and the mirror for detecting the position of the stage due to continuous operation, environmental temperature change, etc. is small. That is, by grasping the visual field shift amount of the measurement pattern at the same coordinate when the previous sample was measured, and moving the visual field to the coordinate reflecting this, the measurement pattern can be moved to any place on the screen even with the dimension measurement magnification. Positioning becomes possible.

Also in this case, in step S680, the field deviation amount between the coordinates of the target measurement pattern (the coordinate reflecting the field deviation amount when the same position of the sample measured immediately before) is measured and the actual coordinates is measured. However, since the field-of-view displacement measured here is reflected in the target coordinates when measuring the measurement pattern of the same coordinate at the next sample measurement, gradually while measuring any position of the sample with the same shape It is also possible to cope with visual field shift due to thermal expansion deformation occurring in

FIG. 7 is a flowchart of another example showing the execution procedure of the dimension measurement method for the second and subsequent samples in the electron microscope according to the present embodiment. In the flowchart shown in FIG. 7, the rough flow of measurement is the same as in FIG. 4, but the amount of visual field deviation when measuring the same position of the previous sample when moving the visual field to the addressing pattern in step S710. It is characterized by moving the field of view to the coordinates reflecting. By following this procedure, it becomes possible to reduce the visual field shift amount in step S740 from the sample measured immediately before, and the transition to the dimension measurement flowchart of FIG. 6 can be ensured.

FIG. 8 is a flowchart of still another example showing the execution procedure of the dimension measurement method for the second and subsequent samples in the electron microscope according to the present embodiment. In the flowchart shown in FIG. 8, the rough flow of measurement is the same as that in FIG. 5, but the visual field shift amount when the same position of the sample measured one time before is measured during the visual field movement to the addressing pattern in step S810. It is characterized by moving the field of view to the coordinates reflecting. By following this procedure, it becomes possible to reduce the amount of visual field deviation in step S840 from the sample measured immediately before, and this also ensures the transition to the dimension measurement flowchart of FIG. 6 as in FIG. Can do.

For example, when performing a long measurement such that the measurement time per sheet takes several hours, it is preferable to use FIGS. 7 and 8 for the measurement of the second and subsequent samples in consideration of the visual field shift due to thermal expansion deformation. .

FIG. 9 is a combination example of flowcharts applied when measuring a plurality of arbitrary positions of a sample having the same shape. These combinations can be arbitrarily set by the operator.

When measuring the second and subsequent samples, although not shown in FIG. 1, the temperature change is measured using a thermometer that monitors the environmental temperature and the like around the sample stage 112 and the apparatus, and the computer 106 Therefore, measurement may be performed according to the flowcharts of FIGS. 7 and 8 when necessary.

In this embodiment, the case where a plurality of arbitrary positions of a sample having the same shape is measured has been described for convenience. However, even when measuring a sample having a different shape, if the measurement coordinates are the same, the apparatus throughput is similarly determined. Will improve.

Also, when using the flowcharts of FIGS. 5 and 8, if several addressing patterns and measurement patterns are created at specific coordinates on a sample with different shapes, for example, other measurement coordinate positions are Even if it is not the same, the same effect is produced.

101 Electron gun 102 Electron beam 103 Objective lens 104 Sample 105 Deflection signal generator 106 Computer 107 Deflection amplifier 108 Deflection coil 109 Detector 110 Image controller 111 Image display CRT
112 Sample stage 113 Stage control unit 114 DC amplifier 115 Image shift coil 201 Addressing pattern 202 Measurement pattern 203 Crosshair cursor

Claims (11)

1. Position to the target position on the sample using image data and addressing pattern data formed based on the charged particles emitted from the sample by irradiation of the charged particle source and the charged particle beam emitted from the charged particle source In a charged particle beam apparatus equipped with a control device that performs alignment,
   The control device obtains the position information of the target position based on the difference between the position information of the addressing pattern registered in advance and the position information when the addressing pattern is detected. .
2. In claim 1,
   The control device performs alignment using the addressing pattern data for the first or predetermined plurality of samples, and for the second and subsequent samples or the samples after the predetermined plurality of samples. A charged particle beam apparatus that performs alignment based on position information of the obtained target position.
3. In claim 1,
   The control device executes alignment using the addressing pattern data for the first or predetermined plurality of target positions, and performs the second or subsequent target after the predetermined plurality of target positions. The charged particle beam apparatus is characterized in that the position is aligned based on the position information of the obtained target position.
4. In claim 1,
   The charged particle beam apparatus according to claim 1, wherein when the alignment is performed using the position information of the target position, the control apparatus performs the alignment without using the addressing pattern data.
5. In claim 1,
   The charged particle beam apparatus, wherein the addressing pattern is formed larger than a measurement target pattern existing at the target position.
6. In claim 1,
   The control device executes alignment using the addressing pattern for the first or predetermined plurality of samples, and position information of the pre-registered addressing patterns of the one or plural samples. And the alignment is performed without using the addressing pattern when the difference between the position information when the addressing pattern is detected is within a threshold value, and the alignment is performed. .
7. In claim 1,
   The control device executes alignment using the addressing pattern with respect to the first or predetermined target positions, and the pre-registered addressing pattern with respect to the one or plural target positions. The position adjustment is performed without using the addressing pattern when the difference between the position information and the position information when the addressing pattern is detected is within a threshold value. Particle beam device.
8. Position to the target position on the sample using image data and addressing pattern data formed based on the charged particles emitted from the sample by irradiation of the charged particle source and the charged particle beam emitted from the charged particle source In a charged particle beam apparatus equipped with a control device that performs alignment,
   The control device is obtained from the difference between the alignment to the target position on the sample using the addressing pattern data, the position information of the addressing pattern registered in advance, and the position information when the addressing pattern is detected. A charged particle beam apparatus characterized by switching and executing alignment using position information of the target position.
9. In claim 8,
   The control device is obtained from the difference between the alignment to the target position on the sample using the addressing pattern data, the position information of the addressing pattern registered in advance, and the position information when the addressing pattern is detected. A charged particle beam apparatus that performs alignment without using the addressing pattern data when position information of the target position is registered.
10. An operation condition setting device for a charged particle beam device, which uses the image obtained from the charged particle beam device to cause the charged particle beam device to perform visual field alignment to a measurement target pattern of measurement using the charged particle beam device. In
    Alignment to the target position on the sample using image data and addressing pattern data formed based on the charged particles emitted from the sample, position information of the pre-registered addressing pattern, and detection of the addressing pattern An operating condition setting device for a charged particle beam apparatus, comprising: an arithmetic unit that causes the charged particle beam apparatus to execute based on position information of the target position obtained based on a difference from position information when .
11. In claim 10,
    The arithmetic unit charges the alignment based on position information of the target position obtained based on a difference between position information of the previously registered addressing pattern and position information when the addressing pattern is detected. An operation condition setting device for a charged particle beam device, wherein when the particle beam device is executed, the charged particle beam device is not caused to perform addressing using the addressing pattern data.

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