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WO2013164940A1 - Method for injecting dopant into base body to be processed, and plasma doping apparatus - Google Patents

Method for injecting dopant into base body to be processed, and plasma doping apparatus Download PDF

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Publication number
WO2013164940A1
WO2013164940A1 PCT/JP2013/060509 JP2013060509W WO2013164940A1 WO 2013164940 A1 WO2013164940 A1 WO 2013164940A1 JP 2013060509 W JP2013060509 W JP 2013060509W WO 2013164940 A1 WO2013164940 A1 WO 2013164940A1
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WO
WIPO (PCT)
Prior art keywords
gas
processing container
supply unit
plasma
inert gas
Prior art date
Application number
PCT/JP2013/060509
Other languages
French (fr)
Japanese (ja)
Inventor
正弘 堀込
博一 上田
正浩 岡
政宏 山崎
剛直 根本
Original Assignee
東京エレクトロン株式会社
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Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to US14/397,953 priority Critical patent/US20150132929A1/en
Publication of WO2013164940A1 publication Critical patent/WO2013164940A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/336—Changing physical properties of treated surfaces
    • H01J2237/3365—Plasma source implantation

Definitions

  • Embodiments of the present invention relate to a method of injecting a dopant into a substrate to be processed and a plasma doping apparatus that can be used to implement the method.
  • a doping process for injecting a dopant into a partial region of a substrate to be processed is performed.
  • a MOS transistor is known.
  • a doping process is performed to form an extension region, a source region, and a drain region such as LDD (Lightly Doped Drain). Has been done.
  • LDD Lightly Doped Drain
  • the plasma doping method is a technique in which a dopant gas is injected into a substrate to be processed by generating a plasma of a doping gas in a processing vessel.
  • An example of such a plasma doping method is described in Patent Document 1.
  • an oxide of a dopant may be generated in the processing container and become a particle source.
  • the particles adhere to the substrate to be processed and generate defects, causing a semiconductor device to fail.
  • One aspect of the present invention is a method for implanting a dopant into a substrate to be processed.
  • a step of preparing a substrate to be processed in a processing container and (b) a doping gas containing AsH 3 , an inert gas, and an H 2 gas are supplied into the processing container.
  • the ratio of the hydrogen partial pressure to the total gas pressure in the processing vessel is set to 0.0015 or more and 0.003 or less.
  • the plasma excitation energy may be microwaves.
  • arsenic oxide In plasma doping using a doping gas containing AsH 3 , that is, arsine, arsenic oxide, that is, As 2 O 3, can be generated by the reaction of arsenic and oxygen in the processing chamber.
  • arsenic oxide can be a particle source, in the present method, since the amount of hydrogen described above is present, the amount of arsenic oxide reduced by hydrogen increases, and as a result, the number of particles is greatly reduced.
  • an inert gas is supplied into the processing container, plasma excitation energy is applied to the processing container to generate a plasma of the inert gas, and then into the processing container.
  • a doping gas, an inert gas, and an H 2 gas may be supplied to provide plasma excitation energy in the processing container.
  • a wafer that is, a dummy wafer is prepared in the processing container
  • an inert gas is supplied into the processing container
  • a step of applying plasma excitation energy may be further included.
  • the dummy wafer can be accommodated in the processing container and the inside of the processing container can be cleaned as a pretreatment for the step of injecting the dopant into the substrate to be processed.
  • arsine remaining in the treatment vessel is activated by plasma, and arsenic oxide can be reduced by hydrogen generated thereby. As a result, the number of particles can be reduced.
  • the inert gas may be He gas. Since the He gas has a smaller mass than other inert gases such as Ar gas, it is possible to suppress the deformation of the structure of the semiconductor device by using the He gas as the inert gas.
  • the plasma doping apparatus includes a processing container, a mounting table, first to third supply units, an energy supply unit, and a control unit.
  • the mounting table is provided in the processing container.
  • the first supply unit supplies a doping gas containing AsH 3 in the processing container.
  • the second supply unit supplies an inert gas into the processing container.
  • the third supply unit supplies H 2 gas into the processing container.
  • the energy supply unit provides plasma excitation energy in the processing container.
  • the control unit controls the first supply unit, the second supply unit, and the third supply unit.
  • the control unit includes a first supply unit, a second supply unit, and a third supply unit such that a ratio of a partial pressure of hydrogen to a total gas pressure in the processing container is 0.0015 or more and 0.003 or less. Control the supply section. According to this apparatus, since the amount of hydrogen in the processing container is set to the above-described amount by the control unit, the amount of arsenic oxide reduced by hydrogen is increased, and the number of particles is greatly reduced.
  • the energy supply unit may supply microwaves as plasma excitation energy.
  • control unit supplies an inert gas into the processing container, provides plasma excitation energy in the processing container to generate an inert gas plasma, and then a doping gas in the processing container
  • the first supply unit, the second supply unit, the third supply unit, and the energy supply unit are controlled so as to supply the plasma excitation energy into the processing container by supplying an inert gas and H 2 gas. May be.
  • the doping gas can be supplied into the processing container after the inert gas is supplied and the plasma is ignited, the arsine is polymerized at the time of the plasma ignition to become a particle source. It is suppressed.
  • control unit may control the second supply unit and the energy supply unit so as to supply an inert gas into the processing container and to apply plasma excitation energy into the processing container.
  • the control by the control unit can be performed as a pretreatment before implanting the dopant into the substrate to be processed.
  • arsine remaining in the treatment vessel is activated by plasma, and arsenic oxide can be reduced by hydrogen generated thereby. As a result, the number of particles can be reduced.
  • the second supply unit may supply He gas as an inert gas.
  • He gas As the inert gas, it is possible to suppress deformation of the structure of the semiconductor device.
  • a plasma doping method and a plasma doping apparatus capable of reducing the number of particles are provided.
  • FIG. 1 is a cross-sectional view schematically showing a plasma doping apparatus according to an embodiment. It is a top view which shows the slot plate of one Embodiment.
  • 3 is a flowchart illustrating an embodiment of a method for injecting a dopant into a substrate to be processed.
  • 6 is a graph showing the evaluation results of Experimental Example 1. It is a graph which shows the evaluation result of Experimental example 2 and a comparative experimental example.
  • FIG. 1 is a diagram illustrating a plasma doping apparatus according to an embodiment.
  • the processing container 12 defines a space in which the substrate to be processed W is accommodated and processed.
  • the processing container 12 includes a side wall 12a, a bottom portion 12b, an upper portion 12c, and a lid portion 12d.
  • the side wall 12a has a substantially cylindrical shape.
  • the bottom part 12b is connected to the lower end of the side wall 12a.
  • An exhaust port 12e is formed in the bottom portion 12b, and an exhaust device 16 such as a vacuum pump is connected to the exhaust port 12e via a pressure regulator 14.
  • the pressure regulator 14 controls the exhaust amount based on the pressure measurement value in the processing container 12.
  • the upper part 12c is connected to the upper end of the side wall 12a, and a dielectric window 18 is provided so as to close the opening formed in the upper part 12c.
  • the dielectric window 18 is a substantially disk-shaped member made of quartz, and is sandwiched between the upper portion 12c and the lid portion 12d, and an O-ring is provided between the dielectric window 18 and the upper portion 12c.
  • a sealing member 20 may be provided. Thereby, the inside of the processing container 12 is sealed.
  • a mounting table 22 is provided so as to face the dielectric window 18.
  • the mounting table 22 can be supported by an insulating cylindrical support 24 that extends upward from the bottom 12b side.
  • the mounting table 22 has an electrostatic chuck on its upper surface, and the substrate W to be processed can be electrostatically attracted by the electrostatic chuck.
  • a temperature adjusting mechanism 23 such as a heater for adjusting the temperature of the substrate W to be processed is provided inside the mounting table 22.
  • the mounting table 22 also serves as a high frequency bias electrode.
  • a high frequency power source 28 is connected to the mounting table 22 via a matching unit 26.
  • the high frequency power supply 28 applies a high frequency bias voltage having a predetermined power of 13.56 MHz, for example, to the mounting table 22 via the matching unit 26.
  • the matching unit 26 accommodates a matching unit for matching between the impedance on the high-frequency power source 28 side and the impedance on the load side such as an electrode, plasma, and the processing container 12, and the matching unit is included in this matching unit. Includes a blocking capacitor for generating a self-bias. Note that the high-frequency bias voltage can be supplied as needed during plasma doping.
  • the plasma doping apparatus 10 further includes gas supply sources 30, 32, and 34.
  • the gas supply source 30 includes a flow rate controller 30c such as a gas source 30a, a valve 30b, and a mass flow controller.
  • the gas source 30a is a doping gas source.
  • the gas supply source 30 supplies the doping gas by controlling the flow rate.
  • the doping gas contains arsine (AsH 3 ) and is a gas in which arsine is diluted with an inert gas. This dilution gas is He gas. In one embodiment, the ratio of the arsine partial pressure to the total doping gas pressure is, for example, 0.7%.
  • the dilution gas may be other inert gas such as Ar gas.
  • the gas supply source 32 includes a gas source 32a, a valve 32b, and a flow rate controller 32c such as a mass flow controller.
  • the gas source 32a is a gas source of an inert gas.
  • the gas supply source 32 supplies an inert gas with a controlled flow rate.
  • the inert gas is He gas.
  • the dilution gas may be other inert gas such as Ar gas.
  • the gas supply source 34 includes a gas source 34a, a valve 34b, and a flow rate controller 34c such as a mass flow controller.
  • the gas source 34a is a gas source of hydrogen (H 2 ) gas.
  • the gas supply source 34 supplies hydrogen gas by controlling the flow rate.
  • the gas supply sources 30, 32, and 34 are connected to the flow splitter FS.
  • the flow splitter FS branches the supplied gas into the gas flow path 36 and the gas flow path 38.
  • the gas flow path 36 is provided inside a coaxial waveguide described later.
  • the gas flow path 36 is defined by a pipe provided inside the coaxial waveguide and an injector 40 provided at the center opening of the dielectric window 18.
  • the injector 40 further provides a gas injection hole 42 continuous with the gas flow path.
  • the gas injection holes 42 inject gas downward from the upper side of the mounting table 22 toward the mounting table 22.
  • the gas injection hole 42 and the gas flow path 36 may be referred to as “central introduction portion”.
  • the gas flow path 38 extends annularly in the side wall 12a.
  • the gas flow path 38 is located between the mounting table and the dielectric window 18 in the height direction.
  • a plurality of gas injection holes 44 are connected to the gas flow path 38. These gas injection holes 44 are arranged in an annular shape, and inject gas from the outside toward the central axis with respect to the central axis of the processing container 12.
  • the gas injection hole 44 and the gas flow path 38 may be referred to as “periphery introduction part”.
  • the gas flow path 36, the gas injection hole 42, the gas flow path 38, and the gas injection hole 44 together with the gas supply source 30 constitute a first supply unit of one embodiment, and the gas supply source 32.
  • the second supply unit of the embodiment is configured together with the gas supply source 34, and the third supply unit of the embodiment is configured.
  • the plasma doping apparatus 10 further includes an energy supply unit 50 that supplies plasma excitation energy into the processing container.
  • the energy supply unit 50 is configured to supply microwaves as plasma excitation energy into the processing container 12 from a radial line slot antenna.
  • the microwave generator 52, the tuner 54, and the waveguide are provided.
  • a tube 56, a mode converter 58, a coaxial waveguide 60, and an antenna 62 are included.
  • the microwave generator 52 generates, for example, 2.45 GHz TE mode microwave.
  • the microwave generator 52 is connected to a mode converter 58 via a tuner 54 and a waveguide 56.
  • the mode converter 58 converts the mode of the microwave generated by the microwave generator 52 and propagating through the tuner 54 and the waveguide 56 into the TEM mode.
  • the mode converter 58 is connected to the upper end of the coaxial waveguide 60.
  • the lower end of the coaxial waveguide 60 is connected to the antenna 62.
  • the antenna 62 is provided in the central opening of the lid 12d of the processing container 12.
  • the antenna 62 includes a dielectric window 18, a slot plate 64, a dielectric plate 66, and a cooling jacket 68.
  • the slot plate 64 is provided immediately above the dielectric window 18.
  • the slot plate 64 is connected to the lower end of the inner conductor of the coaxial waveguide 60.
  • FIG. 2 is a plan view showing a slot plate according to an embodiment. As shown in FIG. 2, the slot plate 64 is a substantially disk-shaped metal member.
  • the slot plate 64 is provided with a plurality of slot pairs 64a. Each of the plurality of slot pairs 64a includes slot holes 64b and 64c extending in a direction intersecting or orthogonal to each other.
  • the plurality of slot pairs 64 a are arranged in the radial direction and the circumferential direction on the slot plate 64.
  • the dielectric plate 66 is a substantially disk-shaped member made of quartz, and is sandwiched between the cooling jacket 68 and the slot plate 64.
  • the cooling jacket 68 is provided to cool the dielectric plate 66 and the like, and a coolant channel is provided therein.
  • the lower end of the outer conductor of the coaxial waveguide 60 is connected to the upper portion of the cooling jacket 68.
  • the microwave propagating from the coaxial waveguide 60 propagates from the slot hole of the slot plate 64 to the dielectric window 18 while being reflected between the slot plate 64 and the cooling jacket 68.
  • the microwave transmitted through the dielectric window 18 generates an electric field immediately below the dielectric window 18 and generates plasma in the processing container 12.
  • plasma can be excited by microwaves without using a magnetic field.
  • a so-called plasma generation region is formed in the region immediately below the dielectric window 18, in which the plasma electron temperature is relatively higher than in other regions.
  • a plasma diffusion region in which plasma generated in the plasma generation region diffuses is formed below the plasma generation region.
  • This plasma diffusion region is a region where the electron temperature of plasma is relatively low, and plasma doping is performed on the substrate to be processed W in this region. Therefore, the plasma doping apparatus 10 can suppress damage to the substrate to be processed W during plasma doping. Further, since the plasma doping apparatus 10 can generate high-density plasma, efficient plasma doping can be performed.
  • the plasma doping apparatus 10 further includes a control unit 70.
  • the control unit 70 has a programmable CPU (central processing unit), and controls each unit by sending a control signal to each unit of the plasma doping apparatus 10. Specifically, the control unit 70 controls the pressure regulator 14, the exhaust device 16, the temperature adjustment mechanism 23, the high frequency power supply 28, the matching unit 26, the microwave generator 52, and the gas supply units 30, 32, and 34. .
  • a plasma doping method performed in the plasma doping apparatus 10 under the control of the control unit 70 will be described as an embodiment of a method for injecting a dopant into a substrate to be processed.
  • FIG. 3 is a flow diagram illustrating one embodiment of a method for implanting a dopant into a substrate to be processed.
  • method M10 includes a pretreatment step S1.
  • the pretreatment step S1 is a process for removing arsenic oxide generated by the previously performed process, that is, As 2 O 3 particles.
  • This particle is, for example, a combination of As (arsenic) in arsine contained in the doping gas and oxygen contained in a member in the plasma doping apparatus 10, for example, the dielectric window 18, or in the processing vessel 12 after plasma doping May be generated by a reaction between the arsine remaining in the substrate and oxygen used during plasma cleaning in the processing chamber 12.
  • a dummy wafer is mounted on the mounting table 22, and an inert gas is supplied to the gas supply source 32 and a microwave is supplied to the energy supply unit 50 under the control of the control unit.
  • an inert gas is supplied to the gas supply source 32 and a microwave is supplied to the energy supply unit 50 under the control of the control unit.
  • plasma of an inert gas is generated in the processing container 12.
  • arsine remaining in the treatment container 12 is activated by the plasma of the inert gas.
  • the hydrogen generated by the activation of arsine reduces arsenic oxide and generates arsine again.
  • the pretreatment step S1 the number of arsenic oxide particles is reduced.
  • the substrate W to be processed is prepared in the processing container 12 in step S2. Specifically, the substrate to be processed W is transferred into the processing container 12 by the transfer device, and the substrate to be processed W is placed on the mounting table 22.
  • this step S3 may include step S4 and step S5.
  • plasma is ignited in the processing container 12 to which the inert gas is supplied prior to the doping gas injection.
  • step S ⁇ b> 4 an inert gas is supplied to the gas supply source 32 and a microwave is supplied to the energy supply unit 50 under the control of the control unit 70.
  • plasma of an inert gas is generated in the processing container 12.
  • This step S4 is performed, for example, for 7 seconds.
  • plasma can be ignited at a pressure higher than step S5 described later, for example, 40 Pa.
  • this step S4 since plasma of an inert gas is generated without supplying a doping gas, polymerization of arsine under high pressure is suppressed, and as a result, generation of particles can be suppressed.
  • step S5 dopant is implanted into the substrate to be processed W in step S5.
  • the gas supply source 30 under the control of the control unit 70, the gas supply source 30 is supplied with a doping gas, the gas supply source 32 is supplied with an inert gas, and the gas supply source 34 is supplied with hydrogen (H 2 ) gas.
  • the microwave is supplied to the energy supply unit 50.
  • arsine is dissociated to generate active species such as arsenic ions or arsenic radicals, and these active species react with the substrate to be processed W, thereby performing plasma doping.
  • step S5 the control of the gas supply sources 30, 32, and 34 by the control unit 70 causes the ratio of the partial pressure of hydrogen to the total pressure of the gas supplied into the processing container 12, that is, (hydrogen partial pressure) / (Total pressure) is set to 0.0015 or more and 0.003 or less.
  • (hydrogen partial pressure) / (total pressure) is set to 0.0015 or more and 0.003 or less.
  • (hydrogen partial pressure) / (total pressure) to a value in this range, the number of arsenic oxide particles is reduced.
  • a member in the processing vessel 12 for example, a quartz dielectric window 18 and arsenic can react to produce As 2 O 3, but (hydrogen partial pressure) / (total pressure). Is present in the processing container 12, the hydrogen efficiently reduces As 2 O 3 and generates arsine again.
  • step S5 when (hydrogen partial pressure) / (total pressure) is 0.003 or less, the amount of hydrogen becomes excessive, and the silicon of the substrate W to be processed can be suppressed from being etched by hydrogen.
  • the etched portion is counted as a particle as a crystal defect.
  • step S5 the number of generated particles can be reduced.
  • the inert gas used in step S4 and step S5 of the method M10 described above may be He gas.
  • He gas having a lower mass than Ar gas As the inert gas, it is possible to suppress deformation of the structure of the semiconductor device formed on the substrate W to be processed.
  • samples 11 to 11 were obtained by treating 11 silicon substrates using (hydrogen partial pressure) / (total pressure) as a variable parameter.
  • the flow rates of H 2 gas, doping gas, inert gas (He gas), and (hydrogen partial pressure) / (total pressure) when samples 1 to 11 were obtained are as shown in Table 1. there were.
  • the doping gas a gas containing arsine having a partial pressure ratio to the total pressure of 0.7% and He having a partial pressure ratio to the total pressure of 99.3% was used.
  • Experimental Example 2 the effects of the steps S1 and S4 were confirmed by performing plasma doping on a silicon substrate to be processed having a diameter of 300 mm using a doping gas after performing the steps S1 and S4.
  • the conditions of each process of Experimental Example 2 were as follows.
  • the number of particles adhering to the substrate to be processed obtained in Experimental Example 2 is 100 or less, whereas the number of particles adhering to the substrate to be processed obtained in Comparative Experimental Example is 10,000 or more. there were.

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Abstract

Provided is a method for injecting a dopant into a base body to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a base body to be processed; and (b) a step for injecting a dopant into the base body by supplying a doping gas containing AsH3, an inert gas, and H2 gas to the inside of the processing container, and applying plasma excitation energy to the inside of the processing container. In the step of injecting the dopant, the ratio of hydrogen partial pressure to the gas total pressure in the processing container is set within the range of 0.0015-0.003.

Description

被処理基体にドーパントを注入する方法、及びプラズマドーピング装置Method of implanting dopant into substrate to be processed and plasma doping apparatus
　本発明の実施形態は、被処理基体にドーパントを注入する方法、及び該方法の実施に用いることができるプラズマドーピング装置に関するものである。 Embodiments of the present invention relate to a method of injecting a dopant into a substrate to be processed and a plasma doping apparatus that can be used to implement the method.
　半導体装置の製造においては、被処理基体の一部領域にドーパントを注入するドーピング処理が行われる。このような半導体装置としては、例えば、ＭＯＳトランジスタが知られており、ＭＯＳトランジスタの製造においては、ＬＤＤ（Ｌｉｇｈｔｌｙ　Ｄｏｐｅｄ　Ｄｒａｉｎ）といった拡張領域、ソース領域、及びドレイン領域の形成のために、ドーピング処理が行われている。このようなドーピング処理を行う方法の一つとして、イオンビーム注入法が知られている。 In the manufacture of a semiconductor device, a doping process for injecting a dopant into a partial region of a substrate to be processed is performed. As such a semiconductor device, for example, a MOS transistor is known. In the manufacture of a MOS transistor, a doping process is performed to form an extension region, a source region, and a drain region such as LDD (Lightly Doped Drain). Has been done. As one of methods for performing such a doping process, an ion beam implantation method is known.
　一方、近年になって、フィン型ＭＯＳトランジスタのような立体的構造を有する半導体装置の開発が進められている。しかしながら、イオンビーム注入法は、このような立体的表面、即ち、異なる方向に向いた複数の面に対して均一にイオンを照射することはできない。そのため、立体的表面に比較的均一にドーパントを注入し得るプラズマドーピング方法が注目されてきている。 On the other hand, in recent years, development of a semiconductor device having a three-dimensional structure such as a fin-type MOS transistor has been advanced. However, the ion beam implantation method cannot uniformly irradiate such a three-dimensional surface, that is, a plurality of surfaces oriented in different directions. Therefore, a plasma doping method that can inject a dopant relatively uniformly into a three-dimensional surface has attracted attention.
　プラズマドーピング方法は、処理容器内でドーピングガスのプラズマを発生させて、被処理基体にドーパントを注入する技術である。このようなプラズマドーピング方法の一例は、特許文献１に記載されている。 The plasma doping method is a technique in which a dopant gas is injected into a substrate to be processed by generating a plasma of a doping gas in a processing vessel. An example of such a plasma doping method is described in Patent Document 1.
特開平６－２５２０８３号公報JP-A-6-252083
　プラズマドーピング方法では、処理容器内にドーパントの酸化物が発生して、パーティクル源となることがある。パーティクルは、被処理基体に付着して欠陥を発生させ、半導体装置の不良を引き起こす。 In the plasma doping method, an oxide of a dopant may be generated in the processing container and become a particle source. The particles adhere to the substrate to be processed and generate defects, causing a semiconductor device to fail.
　したがって、パーティクル数を低減可能なプラズマドーピング方法及びプラズマドーピング装置が求められている。 Therefore, there is a need for a plasma doping method and a plasma doping apparatus that can reduce the number of particles.
　本発明の一側面は、被処理基体にドーパントを注入する方法である。この方法は、（ａ）処理容器内に被処理基体を準備する工程と、（ｂ）処理容器内に、ＡｓＨ３を含むドーピングガス、不活性ガス、及び、Ｈ２ガスを供給し、当該処理容器内にプラズマ励起エネルギーを与えて、被処理基体にドーパントを注入する工程と、を含む。ドーパントを注入する工程においては、処理容器内におけるガスの全圧に対する水素の分圧の比が０．００１５以上０．００３以下に設定される。一実施形態においては、プラズマ励起エネルギーはマイクロ波であってもよい。 One aspect of the present invention is a method for implanting a dopant into a substrate to be processed. In this method, (a) a step of preparing a substrate to be processed in a processing container, and (b) a doping gas containing AsH 3 , an inert gas, and an H 2 gas are supplied into the processing container. Applying plasma excitation energy into the container and implanting the dopant into the substrate to be processed. In the step of injecting the dopant, the ratio of the hydrogen partial pressure to the total gas pressure in the processing vessel is set to 0.0015 or more and 0.003 or less. In one embodiment, the plasma excitation energy may be microwaves.
　ＡｓＨ３、即ちアルシンを含むドーピングガスを用いたプラズマドーピングでは、処理容器内においてヒ素と酸素が反応することにより、ヒ素酸化物、即ち、Ａｓ２Ｏ３が発生し得る。ヒ素酸化物はパーティクル源となり得るが、本方法では、上述した量の水素が存在するので、水素により還元されるヒ素酸化物の量が増加し、その結果、パーティクルの数が大きく低減される。 In plasma doping using a doping gas containing AsH 3 , that is, arsine, arsenic oxide, that is, As 2 O 3, can be generated by the reaction of arsenic and oxygen in the processing chamber. Although arsenic oxide can be a particle source, in the present method, since the amount of hydrogen described above is present, the amount of arsenic oxide reduced by hydrogen increases, and as a result, the number of particles is greatly reduced.
　一実施形態では、ドーパントを注入する工程において、処理容器内に不活性ガスを供給し、処理容器内にプラズマ励起エネルギーを与えて、不活性ガスのプラズマを生成し、その後に、処理容器内にドーピングガス、不活性ガス、及び、Ｈ２ガスを供給して、処理容器内にプラズマ励起エネルギーを与えてもよい。この実施形態によれば、不活性ガスを供給してプラズマを着火した後に、ドーピングガスを処理容器内に供給することができるので、プラズマ着火時にアルシンが重合してパーティクル源となることが抑制される。 In one embodiment, in the step of injecting the dopant, an inert gas is supplied into the processing container, plasma excitation energy is applied to the processing container to generate a plasma of the inert gas, and then into the processing container. A doping gas, an inert gas, and an H 2 gas may be supplied to provide plasma excitation energy in the processing container. According to this embodiment, since the doping gas can be supplied into the processing container after the inert gas is supplied and the plasma is ignited, it is suppressed that arsine is polymerized and becomes a particle source during the plasma ignition. The
　一実施形態の方法は、処理容器内に被処理基体を準備する工程の前に、処理容器内にウェハ、即ち、ダミーウェハを準備し、処理容器内に不活性ガスを供給し、処理容器内にプラズマ励起エネルギーを与える工程を更に含んでいてもよい。この実施形態によれば、被処理基体にドーパントを注入する工程の前処理として、ダミーウェハを処理容器内に収容して、処理容器内をクリーニングすることができる。この前処理では、処理容器内に残留しているアルシンをプラズマによって活性化させ、これにより発生する水素によりヒ素酸化物を還元することができる。その結果、パーティクル数を減少させることが可能である。 In one embodiment, before the step of preparing a substrate to be processed in a processing container, a wafer, that is, a dummy wafer is prepared in the processing container, an inert gas is supplied into the processing container, A step of applying plasma excitation energy may be further included. According to this embodiment, the dummy wafer can be accommodated in the processing container and the inside of the processing container can be cleaned as a pretreatment for the step of injecting the dopant into the substrate to be processed. In this pretreatment, arsine remaining in the treatment vessel is activated by plasma, and arsenic oxide can be reduced by hydrogen generated thereby. As a result, the number of particles can be reduced.
　一実施形態では、不活性ガスはＨｅガスであってもよい。ＨｅガスはＡｒガスといった他の不活性ガスよりも質量が小さいので、不活性ガスとしてＨｅガスを用いることにより、半導体装置の構造の変形を抑制することが可能となる。 In one embodiment, the inert gas may be He gas. Since the He gas has a smaller mass than other inert gases such as Ar gas, it is possible to suppress the deformation of the structure of the semiconductor device by using the He gas as the inert gas.
　また、本発明の別の一側面は、プラズマドーピング装置に関する。このプラズマドーピング装置は、処理容器、載置台、第１～第３の供給部、エネルギー供給部、及び、制御部を備えている。載置台は、処理容器内に設けられている。第１の供給部は、処理容器内にＡｓＨ３を含むドーピングガスを供給する。第２の供給部は、処理容器内に不活性ガスを供給する。第３の供給部は、処理容器内にＨ２ガスを供給する。エネルギー供給部は、処理容器内にプラズマ励起エネルギーを与える。制御部は、第１の供給部、第２の供給部、及び第３の供給部を制御する。制御部は、処理容器内におけるガスの全圧に対する水素の分圧の比が０．００１５以上０．００３以下となるように、第１の供給部、第２の供給部、及び、第３の供給部を制御する。この装置によれば、制御部によって処理容器内の水素が上述した量に設定されるので、水素により還元されるヒ素酸化物の量が増加し、パーティクルの数が大きく低減される。なお、一実施形態においては、エネルギー供給部は、プラズマ励起エネルギーとしてマイクロ波を供給してもよい。 Another aspect of the present invention relates to a plasma doping apparatus. The plasma doping apparatus includes a processing container, a mounting table, first to third supply units, an energy supply unit, and a control unit. The mounting table is provided in the processing container. The first supply unit supplies a doping gas containing AsH 3 in the processing container. The second supply unit supplies an inert gas into the processing container. The third supply unit supplies H 2 gas into the processing container. The energy supply unit provides plasma excitation energy in the processing container. The control unit controls the first supply unit, the second supply unit, and the third supply unit. The control unit includes a first supply unit, a second supply unit, and a third supply unit such that a ratio of a partial pressure of hydrogen to a total gas pressure in the processing container is 0.0015 or more and 0.003 or less. Control the supply section. According to this apparatus, since the amount of hydrogen in the processing container is set to the above-described amount by the control unit, the amount of arsenic oxide reduced by hydrogen is increased, and the number of particles is greatly reduced. In one embodiment, the energy supply unit may supply microwaves as plasma excitation energy.
　一実施形態においては、制御部は、処理容器内に不活性ガスを供給し、処理容器内にプラズマ励起エネルギーを与えて不活性ガスのプラズマを生成し、その後に、処理容器内にドーピングガス、不活性ガス、及び、Ｈ２ガスを供給して、処理容器内にプラズマ励起エネルギーを与えるよう、第１の供給部、第２の供給部、第３の供給部、及び、エネルギー供給部を制御してもよい。この実施形態の装置によれば、不活性ガスを供給してプラズマを着火した後に、ドーピングガスを処理容器内に供給することができるので、プラズマ着火時にアルシンが重合してパーティクル源となることが抑制される。 In one embodiment, the control unit supplies an inert gas into the processing container, provides plasma excitation energy in the processing container to generate an inert gas plasma, and then a doping gas in the processing container, The first supply unit, the second supply unit, the third supply unit, and the energy supply unit are controlled so as to supply the plasma excitation energy into the processing container by supplying an inert gas and H 2 gas. May be. According to the apparatus of this embodiment, since the doping gas can be supplied into the processing container after the inert gas is supplied and the plasma is ignited, the arsine is polymerized at the time of the plasma ignition to become a particle source. It is suppressed.
　一実施形態においては、制御部は、処理容器内に不活性ガスを供給し、処理容器内にプラズマ励起エネルギーを与えるよう、第２の供給部、及びエネルギー供給部を制御してもよい。この制御部による制御は、被処理基体にドーパントを注入する前の前処理として実施され得る。この前処理により、処理容器内に残留しているアルシンをプラズマにより活性化させ、これにより発生する水素によりヒ素酸化物を還元することができる。その結果、パーティクル数を減少させることが可能である。 In one embodiment, the control unit may control the second supply unit and the energy supply unit so as to supply an inert gas into the processing container and to apply plasma excitation energy into the processing container. The control by the control unit can be performed as a pretreatment before implanting the dopant into the substrate to be processed. By this pretreatment, arsine remaining in the treatment vessel is activated by plasma, and arsenic oxide can be reduced by hydrogen generated thereby. As a result, the number of particles can be reduced.
　一実施形態においては、第２の供給部は、不活性ガスとしてＨｅガスを供給してもよい。不活性ガスとしてＨｅガスを用いることにより、半導体装置の構造の変形を抑制することが可能となる。 In one embodiment, the second supply unit may supply He gas as an inert gas. By using He gas as the inert gas, it is possible to suppress deformation of the structure of the semiconductor device.
　以上説明したように、本発明の側面及び実施形態によれば、パーティクル数を低減可能なプラズマドーピング方法及びプラズマドーピング装置が提供される。 As described above, according to aspects and embodiments of the present invention, a plasma doping method and a plasma doping apparatus capable of reducing the number of particles are provided.
一実施形態に係るプラズマドーピング装置を概略的に示す断面図である。1 is a cross-sectional view schematically showing a plasma doping apparatus according to an embodiment. 一実施形態のスロット板を示す平面図である。It is a top view which shows the slot plate of one Embodiment. 被処理基体にドーパントを注入する方法の一実施形態を示す流れ図である。3 is a flowchart illustrating an embodiment of a method for injecting a dopant into a substrate to be processed. 実験例１の評価結果を示すグラフである。6 is a graph showing the evaluation results of Experimental Example 1. 実験例２及び比較実験例の評価結果を示すグラフである。It is a graph which shows the evaluation result of Experimental example 2 and a comparative experimental example.
　以下、図面を参照して種々の実施形態について詳細に説明する。なお、各図面において同一又は相当の部分に対しては同一の符号を附すこととする。 Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals.
　まず、一実施形態に係るプラズマドーピング装置について説明する。図１は、一実施形態に係るプラズマドーピング装置を示す図である。図１に示すプラズマドーピング装置１０は、処理容器１２を備えている。処理容器１２は、その内部に被処理基体Ｗを収容して処理する空間を画成している。 First, a plasma doping apparatus according to an embodiment will be described. FIG. 1 is a diagram illustrating a plasma doping apparatus according to an embodiment. A plasma doping apparatus 10 shown in FIG. The processing container 12 defines a space in which the substrate to be processed W is accommodated and processed.
　一実施形態においては、処理容器１２は、側壁１２ａ、底部１２ｂ、上部１２ｃ、及び蓋部１２ｄを含んでいる。側壁１２ａは略筒形状を有している。底部１２ｂは、側壁１２ａの下端に接続している。底部１２ｂには、排気口１２ｅが形成されており、当該排気口１２ｅには、圧力調整器１４を介して、真空ポンプといった排気装置１６が接続されている。圧力調整器１４は、処理容器１２内の圧力計測値に基づいて、排気量を制御する。 In one embodiment, the processing container 12 includes a side wall 12a, a bottom portion 12b, an upper portion 12c, and a lid portion 12d. The side wall 12a has a substantially cylindrical shape. The bottom part 12b is connected to the lower end of the side wall 12a. An exhaust port 12e is formed in the bottom portion 12b, and an exhaust device 16 such as a vacuum pump is connected to the exhaust port 12e via a pressure regulator 14. The pressure regulator 14 controls the exhaust amount based on the pressure measurement value in the processing container 12.
　側壁１２ａの上端には上部１２ｃが接続されており、上部１２ｃに形成された開口を閉じるように誘電体窓１８が設けられている。この誘電体窓１８は、石英製の略円板状の部材であり、上部１２ｃと蓋部１２ｄとの間に挟持されており、誘電体窓１８と上部１２ｃとの間には、Ｏリングといった封止部材２０が設けられ得る。これにより、処理容器１２の内部は、密閉されている。 The upper part 12c is connected to the upper end of the side wall 12a, and a dielectric window 18 is provided so as to close the opening formed in the upper part 12c. The dielectric window 18 is a substantially disk-shaped member made of quartz, and is sandwiched between the upper portion 12c and the lid portion 12d, and an O-ring is provided between the dielectric window 18 and the upper portion 12c. A sealing member 20 may be provided. Thereby, the inside of the processing container 12 is sealed.
　処理容器１２内には、誘電体窓１８と対面するように、載置台２２が設けられている。載置台２２は、底部１２ｂ側から上方に延在する絶縁性の筒状支持部２４によって支持され得る。この載置台２２は、その上面に静電チャックを有しており、静電チャックにより被処理基体Ｗを静電吸着することができる。載置台２２の内部には、被処理基体Ｗの温度を調整するためのヒータといった温度調整機構２３が設けられている。 In the processing container 12, a mounting table 22 is provided so as to face the dielectric window 18. The mounting table 22 can be supported by an insulating cylindrical support 24 that extends upward from the bottom 12b side. The mounting table 22 has an electrostatic chuck on its upper surface, and the substrate W to be processed can be electrostatically attracted by the electrostatic chuck. A temperature adjusting mechanism 23 such as a heater for adjusting the temperature of the substrate W to be processed is provided inside the mounting table 22.
　また、載置台２２は高周波バイアス電極を兼ねている。この載置台２２には、マッチングユニット２６を介して高周波電源２８が接続されている。高周波電源２８は、例えば、１３．５６ＭＨｚの所定電力の高周波バイアス電圧をマッチングユニット２６を介して載置台２２に与える。マッチングユニット２６は、高周波電源２８側のインピーダンスと、主に電極、プラズマ、処理容器１２といった負荷側のインピーダンスとの間で整合をとるための整合器を収容しており、この整合器の中には自己バイアス生成用のブロッキングコンデンサが含まれている。なお、高周波バイアス電圧は、プラズマドーピング中に必要に応じて供給され得る。 The mounting table 22 also serves as a high frequency bias electrode. A high frequency power source 28 is connected to the mounting table 22 via a matching unit 26. The high frequency power supply 28 applies a high frequency bias voltage having a predetermined power of 13.56 MHz, for example, to the mounting table 22 via the matching unit 26. The matching unit 26 accommodates a matching unit for matching between the impedance on the high-frequency power source 28 side and the impedance on the load side such as an electrode, plasma, and the processing container 12, and the matching unit is included in this matching unit. Includes a blocking capacitor for generating a self-bias. Note that the high-frequency bias voltage can be supplied as needed during plasma doping.
　プラズマドーピング装置１０は、ガス供給源３０，３２，３４を更に備えている。ガス供給源３０は、ガス源３０ａ、弁３０ｂ、及び、マスフローコントローラといった流量制御器３０ｃを含んでいる。ガス源３０ａは、ドーピングガスのガス源である。ガス供給源３０は、ドーピングガスを流量制御して供給する。ドーピングガスは、アルシン（ＡｓＨ３）を含有しており、アルシンが不活性ガスによって希釈されたガスである。この希釈ガスはＨｅガスである。一実施形態では、ドーピングガスの全圧に対するアルシンの分圧の比は、例えば、０．７％である。なお、希釈ガスは、Ａｒガスといった他の不活性ガスであってもよい。 The plasma doping apparatus 10 further includes gas supply sources 30, 32, and 34. The gas supply source 30 includes a flow rate controller 30c such as a gas source 30a, a valve 30b, and a mass flow controller. The gas source 30a is a doping gas source. The gas supply source 30 supplies the doping gas by controlling the flow rate. The doping gas contains arsine (AsH 3 ) and is a gas in which arsine is diluted with an inert gas. This dilution gas is He gas. In one embodiment, the ratio of the arsine partial pressure to the total doping gas pressure is, for example, 0.7%. The dilution gas may be other inert gas such as Ar gas.
　ガス供給源３２は、ガス源３２ａ、弁３２ｂ、及び、マスフローコントローラといった流量制御器３２ｃを含んでいる。ガス源３２ａは、不活性ガスのガス源である。ガス供給源３２は、不活性ガスを流量制御して供給する。一実施形態では、不活性ガスはＨｅガスである。なお、希釈ガスは、Ａｒガスといった他の不活性ガスであってもよい。 The gas supply source 32 includes a gas source 32a, a valve 32b, and a flow rate controller 32c such as a mass flow controller. The gas source 32a is a gas source of an inert gas. The gas supply source 32 supplies an inert gas with a controlled flow rate. In one embodiment, the inert gas is He gas. The dilution gas may be other inert gas such as Ar gas.
　また、ガス供給源３４は、ガス源３４ａ、弁３４ｂ、及び、マスフローコントローラといった流量制御器３４ｃを含んでいる。ガス源３４ａは、水素（Ｈ２）ガスのガス源である。ガス供給源３４は、水素ガスを流量制御して供給する。 The gas supply source 34 includes a gas source 34a, a valve 34b, and a flow rate controller 34c such as a mass flow controller. The gas source 34a is a gas source of hydrogen (H 2 ) gas. The gas supply source 34 supplies hydrogen gas by controlling the flow rate.
　ガス供給源３０、３２、及び、３４は、フロースプリッタＦＳに接続されている。フロースプリッタＦＳは、供給されたガスを、ガス流路３６及びガス流路３８に分岐させる。ガス流路３６は、後述する同軸導波管の内部に設けられている。一実施形態においては、ガス流路３６は、同軸導波管の内部に設けられた配管と誘電体窓１８の中央の開口に設けられたインジェクタ４０とによって画成されている。インジェクタ４０は、ガス流路に連続するガス噴射孔４２を更に提供している。このガス噴射孔４２は、載置台２２の上方から当該載置台２２に向けて下方にガスを噴射する。なお、以下の説明では、ガス噴射孔４２及びガス流路３６を、「中央導入部」ということがある。 The gas supply sources 30, 32, and 34 are connected to the flow splitter FS. The flow splitter FS branches the supplied gas into the gas flow path 36 and the gas flow path 38. The gas flow path 36 is provided inside a coaxial waveguide described later. In one embodiment, the gas flow path 36 is defined by a pipe provided inside the coaxial waveguide and an injector 40 provided at the center opening of the dielectric window 18. The injector 40 further provides a gas injection hole 42 continuous with the gas flow path. The gas injection holes 42 inject gas downward from the upper side of the mounting table 22 toward the mounting table 22. In the following description, the gas injection hole 42 and the gas flow path 36 may be referred to as “central introduction portion”.
　ガス流路３８は、側壁１２ａ内において環状に延在している。ガス流路３８は、高さ方向においては、載置台と誘電体窓１８との間に位置している。ガス流路３８には、複数のガス噴射孔４４が接続している。これらガス噴射孔４４は、環状に配列されており、処理容器１２の中心軸線に対して外側から当該中心軸線に向けてガスを噴射する。なお、以下の説明では、ガス噴射孔４４及びガス流路３８を、「周辺導入部」ということがある。 The gas flow path 38 extends annularly in the side wall 12a. The gas flow path 38 is located between the mounting table and the dielectric window 18 in the height direction. A plurality of gas injection holes 44 are connected to the gas flow path 38. These gas injection holes 44 are arranged in an annular shape, and inject gas from the outside toward the central axis with respect to the central axis of the processing container 12. In the following description, the gas injection hole 44 and the gas flow path 38 may be referred to as “periphery introduction part”.
　これらガス流路３６、ガス噴射孔４２、ガス流路３８、及びガス噴射孔４４は、ガス供給源３０と共に、一実施形態の第１の供給部を構成しており、また、ガス供給源３２と共に一実施形態の第２の供給部を構成しており、更に、ガス供給源３４と共に、一実施形態の第３の供給部を構成している。 The gas flow path 36, the gas injection hole 42, the gas flow path 38, and the gas injection hole 44 together with the gas supply source 30 constitute a first supply unit of one embodiment, and the gas supply source 32. The second supply unit of the embodiment is configured together with the gas supply source 34, and the third supply unit of the embodiment is configured.
　また、プラズマドーピング装置１０は、処理容器内にプラズマ励起エネルギーを供給するエネルギー供給部５０を更に備えている。一実施形態においては、エネルギー供給部５０は、ラジアルラインスロットアンテナから、プラズマ励起エネルギーとしてマイクロ波を処理容器１２内に供給するように構成されており、マイクロ波発生器５２、チューナー５４、導波管５６、モード変換器５８、同軸導波管６０、及びアンテナ６２を含んでいる。 The plasma doping apparatus 10 further includes an energy supply unit 50 that supplies plasma excitation energy into the processing container. In one embodiment, the energy supply unit 50 is configured to supply microwaves as plasma excitation energy into the processing container 12 from a radial line slot antenna. The microwave generator 52, the tuner 54, and the waveguide are provided. A tube 56, a mode converter 58, a coaxial waveguide 60, and an antenna 62 are included.
　マイクロ波発生器５２は、例えば、２．４５ＧＨｚのＴＥモードのマイクロ波を発生する。マイクロ波発生器５２は、チューナー５４及び導波管５６を介してモード変換器５８に接続されている。モード変換器５８は、マイクロ波発生器５２によって発生され、チューナー５４及び導波管５６を介して伝播するマイクロ波のモードをＴＥＭモードへ変換する。このモード変換器５８には、同軸導波管６０の上端が接続されている。同軸導波管６０の下端はアンテナ６２に接続されている。 The microwave generator 52 generates, for example, 2.45 GHz TE mode microwave. The microwave generator 52 is connected to a mode converter 58 via a tuner 54 and a waveguide 56. The mode converter 58 converts the mode of the microwave generated by the microwave generator 52 and propagating through the tuner 54 and the waveguide 56 into the TEM mode. The mode converter 58 is connected to the upper end of the coaxial waveguide 60. The lower end of the coaxial waveguide 60 is connected to the antenna 62.
　アンテナ６２は、処理容器１２の蓋部１２ｄの中央開口内に設けられている。アンテナ６２は、誘電体窓１８、スロット板６４、誘電体板６６、及び冷却ジャケット６８を含んでいる。スロット板６４は、誘電体窓１８の直上に設けられている。このスロット板６４には、同軸導波管６０の内側導体の下端が接続されている。図２は、一実施形態のスロット板を示す平面図である。図２に示すように、スロット板６４は、略円板状の金属製の部材である。スロット板６４には、複数のスロット対６４ａが設けられている。複数のスロット対６４ａの各々は、互いに交差又は直交する方向に延在するスロット孔６４ｂ及び６４ｃを含んでいる。これら複数のスロット対６４ａは、スロット板６４において径方向及び周方向に配列されている。 The antenna 62 is provided in the central opening of the lid 12d of the processing container 12. The antenna 62 includes a dielectric window 18, a slot plate 64, a dielectric plate 66, and a cooling jacket 68. The slot plate 64 is provided immediately above the dielectric window 18. The slot plate 64 is connected to the lower end of the inner conductor of the coaxial waveguide 60. FIG. 2 is a plan view showing a slot plate according to an embodiment. As shown in FIG. 2, the slot plate 64 is a substantially disk-shaped metal member. The slot plate 64 is provided with a plurality of slot pairs 64a. Each of the plurality of slot pairs 64a includes slot holes 64b and 64c extending in a direction intersecting or orthogonal to each other. The plurality of slot pairs 64 a are arranged in the radial direction and the circumferential direction on the slot plate 64.
　誘電体板６６は、石英製の略円板状の部材であり、冷却ジャケット６８とスロット板６４との間に挟まれている。冷却ジャケット６８は、誘電体板６６等を冷却するために設けられており、その内部には、冷媒用の流路が設けられている。この冷却ジャケット６８の上部には、同軸導波管６０の外側導体の下端が接続されている。 The dielectric plate 66 is a substantially disk-shaped member made of quartz, and is sandwiched between the cooling jacket 68 and the slot plate 64. The cooling jacket 68 is provided to cool the dielectric plate 66 and the like, and a coolant channel is provided therein. The lower end of the outer conductor of the coaxial waveguide 60 is connected to the upper portion of the cooling jacket 68.
　プラズマドーピング装置１０では、同軸導波管６０から伝播するマイクロ波が、スロット板６４と冷却ジャケット６８との間で反射されながらスロット板６４のスロット孔から誘電体窓１８に伝播する。誘電体窓１８を透過したマイクロ波は、当該誘電体窓１８の直下に電界を生じさせ、処理容器１２内にプラズマを発生させる。このように、プラズマドーピング装置１０では、磁場を用いることなく、マイクロ波によりプラズマを励起することができる。 In the plasma doping apparatus 10, the microwave propagating from the coaxial waveguide 60 propagates from the slot hole of the slot plate 64 to the dielectric window 18 while being reflected between the slot plate 64 and the cooling jacket 68. The microwave transmitted through the dielectric window 18 generates an electric field immediately below the dielectric window 18 and generates plasma in the processing container 12. Thus, in the plasma doping apparatus 10, plasma can be excited by microwaves without using a magnetic field.
　このプラズマドーピング装置１０においてマイクロ波プラズマを発生させると、誘電体窓１８の直下の領域においては、それ以外の領域と比べて相対的にプラズマの電子温度が高い、所謂プラズマ生成領域が形成される。また、プラズマ生成領域の下方には、当該プラズマ生成領域で生成されたプラズマが拡散するプラズマ拡散領域が形成される。このプラズマ拡散領域は、プラズマの電子温度が比較的低い領域であり、この領域において被処理基体Ｗに対するプラズマドーピングが行われる。したがって、プラズマドーピング装置１０は、プラズマドーピング時に被処理基体Ｗに対するダメージを抑制することができる。また、プラズマドーピング装置１０は、高密度のプラズマを生成することができるので、効率的なプラズマドーピングを行うことができる。 When microwave plasma is generated in the plasma doping apparatus 10, a so-called plasma generation region is formed in the region immediately below the dielectric window 18, in which the plasma electron temperature is relatively higher than in other regions. . In addition, a plasma diffusion region in which plasma generated in the plasma generation region diffuses is formed below the plasma generation region. This plasma diffusion region is a region where the electron temperature of plasma is relatively low, and plasma doping is performed on the substrate to be processed W in this region. Therefore, the plasma doping apparatus 10 can suppress damage to the substrate to be processed W during plasma doping. Further, since the plasma doping apparatus 10 can generate high-density plasma, efficient plasma doping can be performed.
　本プラズマドーピング装置１０は、更に制御部７０を備えている。制御部７０は、プログラム可能なＣＰＵ（中央処理装置）を有し、プラズマドーピング装置１０の各部に制御信号を送出することにより、当該各部を制御する。具体的に、制御部７０は、圧力調整器１４、排気装置１６、温度調整機構２３、高周波電源２８、マッチングユニット２６、マイクロ波発生器５２、及び、ガス供給部３０，３２，３４を制御する。 The plasma doping apparatus 10 further includes a control unit 70. The control unit 70 has a programmable CPU (central processing unit), and controls each unit by sending a control signal to each unit of the plasma doping apparatus 10. Specifically, the control unit 70 controls the pressure regulator 14, the exhaust device 16, the temperature adjustment mechanism 23, the high frequency power supply 28, the matching unit 26, the microwave generator 52, and the gas supply units 30, 32, and 34. .
　以下、制御部７０の制御によりでプラズマドーピング装置１０において実施されるプラズマドーピング方法を、被処理基体にドーパントを注入する方法の一実施形態として説明する。 Hereinafter, a plasma doping method performed in the plasma doping apparatus 10 under the control of the control unit 70 will be described as an embodiment of a method for injecting a dopant into a substrate to be processed.
　図３は、被処理基体にドーパントを注入する方法の一実施形態を示す流れ図である。一実施形態においては、方法Ｍ１０は、前処理工程Ｓ１を含む。この前処理工程Ｓ１は、先に行われた処理によって発生するヒ素酸化物、即ち、Ａｓ２Ｏ３のパーティクルを除去するための処理である。このパーティクルは、例えば、ドーピングガスに含まれるアルシン中のＡｓ（ヒ素）とプラズマドーピング装置１０内の部材、例えば、誘電体窓１８に含まれる酸素との結合、或いは、プラズマドーピング後に処理容器１２内に残存するアルシンと処理容器１２内のプラズマクリーニング時に用いられた酸素との反応によって発生し得る。 FIG. 3 is a flow diagram illustrating one embodiment of a method for implanting a dopant into a substrate to be processed. In one embodiment, method M10 includes a pretreatment step S1. The pretreatment step S1 is a process for removing arsenic oxide generated by the previously performed process, that is, As 2 O 3 particles. This particle is, for example, a combination of As (arsenic) in arsine contained in the doping gas and oxygen contained in a member in the plasma doping apparatus 10, for example, the dielectric window 18, or in the processing vessel 12 after plasma doping May be generated by a reaction between the arsine remaining in the substrate and oxygen used during plasma cleaning in the processing chamber 12.
　前処理工程Ｓ１では、ダミーウェハを載置台２２上に載置し、制御部７０による制御により、ガス供給源３２に不活性ガスを供給させ、エネルギー供給部５０にマイクロ波を供給させる。これにより、不活性ガスのプラズマが処理容器１２内に発生する。前処理工程Ｓ１では、不活性ガスのプラズマにより、処理容器１２内に残留しているアルシンが活性化される。アルシンが活性化することにより発生する水素は、ヒ素酸化物を還元して、再びアルシンを発生させる。その結果、前処理工程Ｓ１では、ヒ素酸化物のパーティクル数の低減がもたらされる。 In the pre-processing step S1, a dummy wafer is mounted on the mounting table 22, and an inert gas is supplied to the gas supply source 32 and a microwave is supplied to the energy supply unit 50 under the control of the control unit. As a result, plasma of an inert gas is generated in the processing container 12. In the pretreatment step S1, arsine remaining in the treatment container 12 is activated by the plasma of the inert gas. The hydrogen generated by the activation of arsine reduces arsenic oxide and generates arsine again. As a result, in the pretreatment step S1, the number of arsenic oxide particles is reduced.
　次いで、方法Ｍ１０では、工程Ｓ２において、処理容器１２内に被処理基体Ｗが準備される。具体的には、搬送装置によって処理容器１２内に被処理基体Ｗが搬送され、当該被処理基体Ｗが載置台２２上に載置される。 Next, in the method M10, the substrate W to be processed is prepared in the processing container 12 in step S2. Specifically, the substrate to be processed W is transferred into the processing container 12 by the transfer device, and the substrate to be processed W is placed on the mounting table 22.
　次いで、方法Ｍ１０では、工程Ｓ３において、被処理基体Ｗに対するプラズマドーピングが実施される。一実施形態においては、この工程Ｓ３は、工程Ｓ４及び工程Ｓ５を含み得る。工程Ｓ４では、ドーピングガスの注入に先立って、不活性ガスが供給された処理容器１２内においてプラズマが着火される。具体的に、工程Ｓ４では、制御部７０による制御により、ガス供給源３２に不活性ガスを供給させ、エネルギー供給部５０にマイクロ波を供給させる。これにより、不活性ガスのプラズマが処理容器１２内に発生する。この工程Ｓ４は、例えば、７秒間実施される。また、工程Ｓ４では、後述する工程Ｓ５よりも高い圧力、例えば、４０Ｐａの圧力で、プラズマが着火され得る。かかる工程Ｓ４では、ドーピングガスを供給することなく不活性ガスのプラズマを発生させるので、高圧下でのアルシンの重合が抑制され、その結果、パーティクルの発生が抑制され得る。 Next, in the method M10, plasma doping is performed on the substrate to be processed W in step S3. In one embodiment, this step S3 may include step S4 and step S5. In step S4, plasma is ignited in the processing container 12 to which the inert gas is supplied prior to the doping gas injection. Specifically, in step S <b> 4, an inert gas is supplied to the gas supply source 32 and a microwave is supplied to the energy supply unit 50 under the control of the control unit 70. As a result, plasma of an inert gas is generated in the processing container 12. This step S4 is performed, for example, for 7 seconds. In step S4, plasma can be ignited at a pressure higher than step S5 described later, for example, 40 Pa. In this step S4, since plasma of an inert gas is generated without supplying a doping gas, polymerization of arsine under high pressure is suppressed, and as a result, generation of particles can be suppressed.
　次いで、方法Ｍ１０では、工程Ｓ５において被処理基体Ｗに対するドーパントの注入が行われる。具体的に、工程Ｓ５では、制御部７０による制御により、ガス供給源３０にドーピングガスを供給させ、ガス供給源３２に不活性ガスを供給させ、ガス供給源３４に水素（Ｈ２）ガスを供給させ、エネルギー供給部５０にマイクロ波を供給させる。この工程Ｓ５においては、アルシンが解離してヒ素イオン又はヒ素ラジカルといった活性種が発生し、これら活性種が被処理基体Ｗと反応することにより、プラズマドーピングが行われる。 Next, in the method M10, dopant is implanted into the substrate to be processed W in step S5. Specifically, in step S5, under the control of the control unit 70, the gas supply source 30 is supplied with a doping gas, the gas supply source 32 is supplied with an inert gas, and the gas supply source 34 is supplied with hydrogen (H 2 ) gas. Then, the microwave is supplied to the energy supply unit 50. In this step S5, arsine is dissociated to generate active species such as arsenic ions or arsenic radicals, and these active species react with the substrate to be processed W, thereby performing plasma doping.
　また、工程Ｓ５では、制御部７０によるガス供給源３０，３２，３４の制御により、処理容器１２内に供給されるガスの全圧に対する水素の分圧の比、即ち、（水素分圧）／（全圧）が、０．００１５以上０．００３以下に設定される。この範囲の値に、（水素分圧）／（全圧）が設定されることにより、ヒ素酸化物のパーティクル数が低減される。ここで、プラズマドーピング時には、処理容器１２内の部材、例えば、石英製の誘電体窓１８とヒ素とが反応してＡｓ２Ｏ３が生成され得るが、（水素分圧）／（全圧）が０．００１５以上の水素が処理容器１２内に存在することにより、当該水素がＡｓ２Ｏ３を効率良く還元して、再びアルシンを発生させる。また、（水素分圧）／（全圧）が０．００３以下であることにより、水素の量が過剰となり、被処理基体Ｗのシリコンが水素によりエッチングされることを抑制することができる。そのエッチング箇所は結晶の欠陥としてパーティクルとしてもカウントされる。その結果、工程Ｓ５によれば、発生するパーティクルの数を低減することができる。 In step S5, the control of the gas supply sources 30, 32, and 34 by the control unit 70 causes the ratio of the partial pressure of hydrogen to the total pressure of the gas supplied into the processing container 12, that is, (hydrogen partial pressure) / (Total pressure) is set to 0.0015 or more and 0.003 or less. By setting (hydrogen partial pressure) / (total pressure) to a value in this range, the number of arsenic oxide particles is reduced. Here, during plasma doping, a member in the processing vessel 12, for example, a quartz dielectric window 18 and arsenic can react to produce As 2 O 3, but (hydrogen partial pressure) / (total pressure). Is present in the processing container 12, the hydrogen efficiently reduces As 2 O 3 and generates arsine again. Moreover, when (hydrogen partial pressure) / (total pressure) is 0.003 or less, the amount of hydrogen becomes excessive, and the silicon of the substrate W to be processed can be suppressed from being etched by hydrogen. The etched portion is counted as a particle as a crystal defect. As a result, according to step S5, the number of generated particles can be reduced.
　以上説明した方法Ｍ１０の工程Ｓ４及び工程Ｓ５において用いられる不活性ガスは、Ｈｅガスであり得る。不活性ガスとして、Ａｒガスよりも質量の低いＨｅガスを用いることにより、被処理基体Ｗに形成する半導体装置の構造の変形を抑制することが可能となる。 The inert gas used in step S4 and step S5 of the method M10 described above may be He gas. By using He gas having a lower mass than Ar gas as the inert gas, it is possible to suppress deformation of the structure of the semiconductor device formed on the substrate W to be processed.
　以下、プラズマドーピング装置１０を用いた実験例について説明する。 Hereinafter, an experimental example using the plasma doping apparatus 10 will be described.
　（実験例１） (Experiment 1)
　実験例１では、（水素分圧）／（全圧）を可変のパラメータとして、１１個のシリコン製の被処理基体を処理して、サンプル１～１１を得た。サンプル１～１１を得たときのＨ２ガスの流量、ドーピングガスの流量、不活性ガス（Ｈｅガス）の流量、及び、（水素分圧）／（全圧）は、表１に示す通りであった。なお、ドーピングガスとしては、当該ドーピングガスの全圧に対する分圧の比が０．７％のアルシンと当該全圧に対する分圧の比が９９．３％のＨｅを含むガスを用いた。
Figure JPOXMLDOC01-appb-T000001
 In Experimental Example 1, samples 11 to 11 were obtained by treating 11 silicon substrates using (hydrogen partial pressure) / (total pressure) as a variable parameter. The flow rates of H 2 gas, doping gas, inert gas (He gas), and (hydrogen partial pressure) / (total pressure) when samples 1 to 11 were obtained are as shown in Table 1. there were. Note that as the doping gas, a gas containing arsine having a partial pressure ratio to the total pressure of 0.7% and He having a partial pressure ratio to the total pressure of 99.3% was used.
Figure JPOXMLDOC01-appb-T000001
　また、サンプル１～１１を得たときのその他の条件は以下の通りであった。
被処理基体の直径：３００ｍｍ
被処理基体の温度：６０℃
中央導入部のガス流量と周辺導入部のガス流量の比：　　　２０：８０
マイクロ波電力：３．０ｋＷ
高周波バイアス電力：４５０Ｗ
処理容器内圧力：２０Ｐａ
処理時間：４０秒 The other conditions when samples 1 to 11 were obtained were as follows.
Diameter of substrate to be treated: 300mm
Temperature of substrate to be treated: 60 ° C
Ratio of gas flow rate in the central introduction part and gas flow rate in the peripheral introduction part: 20:80
Microwave power: 3.0kW
High frequency bias power: 450W
Processing vessel pressure: 20 Pa
Processing time: 40 seconds
　実験例１では、ケーエルエー・テンコール社製ウェハ表面検査装置「Ｓｕｒｆｓｃａｎ　ＳＰ２ＸＰ」を用いて、サンプル１～１１の被処理基体の表面に付着した０．００４２μｍ以上のサイズのパーティクルの個数を計測した。その結果を図４に示す。図４に示すグラフの横軸は、サンプル１～１１を得たときの（水素分圧）／（全圧）を示しており、縦軸は計測されたパーティクル数を示している。図４に示すように、実験例１では、（水素分圧）／（全圧）を０．００１５以上０．００３以下に設定することにより、パーティクル数を１００個以下に維持できることが確認された。 In Experimental Example 1, the number of particles having a size of 0.0042 μm or more adhered to the surface of the substrate to be processed of Samples 1 to 11 was measured using a wafer surface inspection apparatus “Surfscan SP2XP” manufactured by KLA-Tencor. The result is shown in FIG. The horizontal axis of the graph shown in FIG. 4 indicates (hydrogen partial pressure) / (total pressure) when samples 1 to 11 are obtained, and the vertical axis indicates the number of particles measured. As shown in FIG. 4, in Experimental Example 1, it was confirmed that the number of particles could be maintained at 100 or less by setting (hydrogen partial pressure) / (total pressure) to 0.0015 or more and 0.003 or less. .
　（実験例２） (Experimental example 2)
　実験例２では、工程Ｓ１及び工程Ｓ４を実施後に、ドーピングガスを用いて直径３００ｍｍのシリコン製の被処理基体にプラズマドーピングを行うことにより、工程Ｓ１及び工程Ｓ４の効果を確認した。実験例２の各工程の条件は、以下の通りであった。 In Experimental Example 2, the effects of the steps S1 and S4 were confirmed by performing plasma doping on a silicon substrate to be processed having a diameter of 300 mm using a doping gas after performing the steps S1 and S4. The conditions of each process of Experimental Example 2 were as follows.
　（工程Ｓ１）
ダミーウェハの温度：６０℃
不活性ガス（Ｈｅガス）の流量：１０００ｓｃｃｍ
中央導入部のガス流量と周辺導入部のガス流量の比：　　　２０：８０
マイクロ波電力：３．０ｋＷ
高周波バイアス電力：４５０Ｗ
処理容器内圧力：２０Ｐａ
処理時間：１００秒 (Process S1)
Dummy wafer temperature: 60 ° C
Flow rate of inert gas (He gas): 1000 sccm
Ratio of gas flow rate in the central introduction part and gas flow rate in the peripheral introduction part: 20:80
Microwave power: 3.0kW
High frequency bias power: 450W
Processing vessel pressure: 20 Pa
Processing time: 100 seconds
　（工程Ｓ４）
被処理基体の温度：６０℃
不活性ガス（Ｈｅガス）の流量：１０００ｓｃｃｍ
中央導入部のガス流量と周辺導入部のガス流量の比：　　　２０：８０
マイクロ波電力：３．０ｋＷ
高周波バイアス電力：４５０Ｗ
処理容器内圧力：４０Ｐａ
処理時間：７秒 (Process S4)
Temperature of substrate to be treated: 60 ° C
Flow rate of inert gas (He gas): 1000 sccm
Ratio of gas flow rate in the central introduction part and gas flow rate in the peripheral introduction part: 20:80
Microwave power: 3.0kW
High frequency bias power: 450W
Processing vessel pressure: 40 Pa
Processing time: 7 seconds
　（工程Ｓ４後のプラズマドーピング）
被処理基体の温度：６０℃
不活性ガス（Ｈｅガス）の流量：９０２ｓｃｃｍ
ドーピングガスの流量：９８ｓｃｃｍ
ドーピングガスの全圧に対するアルシンの分圧の比：０．７％
ドーピングガスの全圧に対するＨｅガスの分圧の比：９９．３％
中央導入部のガス流量と周辺導入部のガス流量の比：　　　２０：８０
マイクロ波電力：３．０ｋＷ
高周波バイアス電力：４５０Ｗ
処理容器内圧力：４０Ｐａ
処理時間：４０秒 (Plasma doping after step S4)
Temperature of substrate to be treated: 60 ° C
Flow rate of inert gas (He gas): 902 sccm
Doping gas flow rate: 98 sccm
Ratio of partial pressure of arsine to total pressure of doping gas: 0.7%
Ratio of partial pressure of He gas to total pressure of doping gas: 99.3%
Ratio of gas flow rate in the central introduction part and gas flow rate in the peripheral introduction part: 20:80
Microwave power: 3.0kW
High frequency bias power: 450W
Processing vessel pressure: 40 Pa
Processing time: 40 seconds
　また、比較実験例において、工程Ｓ１及び工程Ｓ４を行わずに、実験例２と同条件のプラズマドーピング（工程Ｓ４）を実施した。そして、実験例２及び比較実験例で得た被処理基体のそれぞれについて、ケーエルエー・テンコール社製ウェハ表面検査装置「Ｓｕｒｆｓｃａｎ　ＳＰ２ＸＰ」を用いて、当該被処理基体に付着した０．０４２μｍ以上のサイズのパーティクルの個数を計測した。その結果を図５に示す。図５の（ａ）及び（ｂ）は、パーティクルのサイズを横軸としパーティクル数を縦軸とするグラフであり、実験例２及び比較実験例で得た被処理基体に付着していたパーティクル数をそれぞれ示している。図５の（ａ）及び（ｂ）を比較すれば明らかなように、工程Ｓ１及び工程Ｓ４を実施することにより、大幅にパーティクル数を削減できることが確認された。なお、実験例２で得た被処理基体に付着していたパーティクルの個数は１００個以下であり、一方、比較実験例で得た被処理基体に付着していたパーティクルの個数は１００００個以上であった。 Further, in the comparative experimental example, plasma doping (process S4) under the same conditions as in experimental example 2 was performed without performing steps S1 and S4. And about each of the to-be-processed base | substrate obtained by Experimental example 2 and the comparative experimental example, the size of 0.042 micrometer or more adhering to the said to-be-processed base | substrate is used using the wafer surface inspection apparatus "Surfscan SP2XP" by KL-Tencor. The number of particles was measured. The result is shown in FIG. 5A and 5B are graphs in which the particle size is the horizontal axis and the number of particles is the vertical axis, and the number of particles adhered to the substrate to be processed obtained in Experimental Example 2 and Comparative Experimental Example. Respectively. As is clear from a comparison of FIGS. 5A and 5B, it was confirmed that the number of particles can be greatly reduced by performing the steps S1 and S4. The number of particles adhering to the substrate to be processed obtained in Experimental Example 2 is 100 or less, whereas the number of particles adhering to the substrate to be processed obtained in Comparative Experimental Example is 10,000 or more. there were.
　以上の結果から、アルシンを含むドーピングガスを用いたプラズマドーピング中に、（水素分圧）／（全圧）を０．００１５以上０．００３以下に設定し、更に、被処理基体へのドーパントの注入に先立って、工程Ｓ１及び工程Ｓ４を行うことにより、パーティクル数をより削減できることが確認された。 From the above results, during the plasma doping using the doping gas containing arsine, (hydrogen partial pressure) / (total pressure) is set to 0.0015 or more and 0.003 or less, and further, the dopant to the substrate to be processed is set. It was confirmed that the number of particles can be further reduced by performing the steps S1 and S4 prior to the implantation.
　１０…プラズマドーピング装置、１２…処理容器、１４…圧力調整器、１６…排気装置、１８…誘電体窓、２２…載置台、２３…温度調整機構、２８…高周波電源、３０…ガス供給源（ドーピングガス）、３２…ガス供給源（不活性ガス）、３４…ガス供給源（水素ガス）、５０…エネルギー供給部、６０…同軸導波管、６２…アンテナ、６４…スロット板、６６…誘電体板、６８…冷却ジャケット、７０…制御部、Ｗ…被処理基体。 DESCRIPTION OF SYMBOLS 10 ... Plasma doping apparatus, 12 ... Processing container, 14 ... Pressure regulator, 16 ... Exhaust device, 18 ... Dielectric window, 22 ... Mounting stand, 23 ... Temperature adjustment mechanism, 28 ... High frequency power supply, 30 ... Gas supply source ( Doping gas), 32 ... gas supply source (inert gas), 34 ... gas supply source (hydrogen gas), 50 ... energy supply unit, 60 ... coaxial waveguide, 62 ... antenna, 64 ... slot plate, 66 ... dielectric Body plate, 68... Cooling jacket, 70... Control unit, W.

Claims (10)

  1. 　被処理基体にドーパントを注入する方法であって、
    　処理容器内に被処理基体を準備する工程と、
    　前記処理容器内に、ＡｓＨ３を含むドーピングガス、不活性ガス、及び、Ｈ２ガスを供給し、該処理容器内にプラズマ励起エネルギーを与えて、前記被処理基体にドーパントを注入する工程と、
    を含み、
    　前記ドーパントを注入する工程においては、前記処理容器内におけるガスの全圧に対する水素の分圧の比が０．００１５以上０．００３以下である、
    方法。     A method of injecting a dopant into a substrate to be processed,
    Preparing a substrate to be processed in a processing container;
    Supplying a doping gas containing AsH 3 into the processing container, an inert gas, and H 2 gas, supplying plasma excitation energy into the processing container, and injecting a dopant into the substrate to be processed;
    Including
    In the step of injecting the dopant, the ratio of the partial pressure of hydrogen to the total pressure of the gas in the processing vessel is 0.0015 or more and 0.003 or less.
    Method.
  2. 　前記ドーパントを注入する工程では、前記処理容器内に前記不活性ガスを供給し、該処理容器内にプラズマ励起エネルギーを与えて、該不活性ガスのプラズマを生成し、その後に、前記処理容器内に前記ドーピングガス、前記不活性ガス、及び、前記Ｈ２ガスを供給して、該処理容器内にプラズマ励起エネルギーを与える、請求項１に記載の方法。 In the step of injecting the dopant, the inert gas is supplied into the processing container, plasma excitation energy is applied to the processing container, and plasma of the inert gas is generated. 2. The method according to claim 1, wherein the doping gas, the inert gas, and the H 2 gas are supplied to provide a plasma excitation energy in the processing chamber.
  3. 　前記処理容器内に被処理基体を準備する工程の前に、前記処理容器内にウェハを準備し、前記処理容器内に前記不活性ガスを供給し、該処理容器内にプラズマ励起エネルギーを与える工程を更に含む、請求項１又は２に記載の方法。 Before preparing the substrate to be processed in the processing container, preparing a wafer in the processing container, supplying the inert gas into the processing container, and providing plasma excitation energy in the processing container The method according to claim 1, further comprising:
  4. 　前記不活性ガスはＨｅガスである、請求項１～３の何れか一項に記載の方法。 The method according to any one of claims 1 to 3, wherein the inert gas is He gas.
  5. 　前記プラズマ励起エネルギーは、マイクロ波である、請求項１～４の何れか一項に記載の方法。 The method according to any one of claims 1 to 4, wherein the plasma excitation energy is microwaves.
  6. 　処理容器と、
    　前記処理容器内に設けられた載置台と、
    　前記処理容器内にＡｓＨ３を含むドーピングガスを供給する第１の供給部と、
    　前記処理容器内に不活性ガスを供給する第２の供給部と、
    　前記処理容器内にＨ２ガスを供給する第３の供給部と、
    　前記処理容器内にプラズマ励起エネルギーを与えるエネルギー供給部と、
    　前記第１の供給部、前記第２の供給部、及び前記第３の供給部を制御する制御部と、
    を備え、
    　前記制御部は、前記処理容器内におけるガスの全圧に対する水素の分圧の比が０．００１５以上０．００３以下となるように、前記第１の供給部、前記第２の供給部、及び、前記第３の供給部を制御する、
    プラズマドーピング装置。     A processing vessel;
    A mounting table provided in the processing container;
    A first supply unit for supplying a doping gas containing AsH 3 into the processing container;
    A second supply unit for supplying an inert gas into the processing container;
    A third supply unit for supplying H 2 gas into the processing container;
    An energy supply unit for providing plasma excitation energy in the processing vessel;
    A control unit for controlling the first supply unit, the second supply unit, and the third supply unit;
    With
    The control unit includes the first supply unit, the second supply unit, and the ratio of a partial pressure of hydrogen to a total pressure of gas in the processing container of 0.0015 or more and 0.003 or less, and Controlling the third supply unit;
    Plasma doping equipment.
  7. 　前記制御部は、前記処理容器内に前記不活性ガスを供給し、該処理容器内にプラズマ励起エネルギーを与えて該不活性ガスのプラズマを生成し、その後に、前記処理容器内に前記ドーピングガス、前記不活性ガス、及び、前記Ｈ２ガスを供給して、該処理容器内にプラズマ励起エネルギーを与えるよう、前記第１の供給部、前記第２の供給部、前記第３の供給部、及び、前記エネルギー供給部を制御する、請求項６に記載のプラズマドーピング装置。 The control unit supplies the inert gas into the processing container, applies plasma excitation energy to the processing container to generate plasma of the inert gas, and then generates the doping gas into the processing container. The first supply unit, the second supply unit, the third supply unit, so as to supply the inert gas and the H 2 gas to give plasma excitation energy in the processing container, The plasma doping apparatus according to claim 6, wherein the energy supply unit is controlled.
  8. 　前記制御部は、前記処理容器内に前記不活性ガスを供給し、該処理容器内にプラズマ励起エネルギーを与えるよう、前記第２の供給部、及び前記エネルギー供給部を制御する、請求項６又は７に記載のプラズマドーピング装置。 The control unit controls the second supply unit and the energy supply unit so that the inert gas is supplied into the processing container and plasma excitation energy is supplied into the processing container. 8. The plasma doping apparatus according to 7.
  9. 　前記第２の供給部は、前記不活性ガスとしてＨｅガスを供給する請求項６～８の何れか一項に記載のプラズマドーピング装置。 The plasma doping apparatus according to any one of claims 6 to 8, wherein the second supply unit supplies He gas as the inert gas.
  10. 　前記エネルギー供給部は、プラズマ励起エネルギーとしてマイクロ波を供給する、請求項６～９の何れか一項に記載のプラズマドーピング装置。 The plasma doping apparatus according to any one of claims 6 to 9, wherein the energy supply unit supplies microwaves as plasma excitation energy.
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