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WO2013162129A1 - Device for driving q-switch element - Google Patents

Device for driving q-switch element Download PDF

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Publication number
WO2013162129A1
WO2013162129A1 PCT/KR2012/007476 KR2012007476W WO2013162129A1 WO 2013162129 A1 WO2013162129 A1 WO 2013162129A1 KR 2012007476 W KR2012007476 W KR 2012007476W WO 2013162129 A1 WO2013162129 A1 WO 2013162129A1
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Prior art keywords
voltage
switching
unit
high voltage
pulse
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PCT/KR2012/007476
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French (fr)
Korean (ko)
Inventor
김종원
김정현
서영석
박경수
백영준
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원테크놀로지 주식회사
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Publication of WO2013162129A1 publication Critical patent/WO2013162129A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping

Definitions

  • the present invention relates to a cue switching element driving device, and more particularly, to a cue switching element driving device used in medical laser equipment, in order to prolong the life of a Pockels Cell, to manufacture a cue-switching device driving device.
  • the present invention relates to a cue-switching element driving apparatus for outputting a time stable high voltage and performing optimal cue-switching by impedance matching with a Pockels cell.
  • treatment with a laser should cause minimal pain in the patient during treatment and leave a minimum scar on the patient after treatment.
  • medical laser equipment uses a Q-switching method.
  • Q-switching it is treated with high energy in a very short time, so there is less scar after treatment and the patient's pain is less than that without using Q-switching method after treatment.
  • Q-switching is generally performed using linear optical effects.
  • These devices are called Pockels cells, which have a longitudinal electric field depending on the direction of the electric field applied to the nonlinear crystal. It has a structure and a transverse electric field structure.
  • the direction of the electric field applied to the crystal is the same as the direction of the light propagation, and the voltage is applied by making an electrode with metal deposition on the end surface of the crystal to apply the electric field. In this case, the size of the effective aperture of the Pockels cell can be increased.
  • the direction of the electric field applied to the crystal is applied in a direction perpendicular to the direction of the light propagation. In this case, the electric field is applied from the side of the crystal, and thus, the low electric field can be driven.
  • Pockels cells typically require voltages from a few hundred volts to tens of kilovolts (kV), high voltage amplifiers are needed to maintain large modulation depths.
  • kV kilovolts
  • the disadvantage is that the light output to be modulated is small.
  • KD * P DKDP
  • KTP Potassium Titanyl Phosphate
  • BBO ⁇ -barium Borate
  • LiNbO 3 Lithium Niobate
  • LiTaO 3 Lithium Tantalate
  • Ammonium Dihydrogen Phosphate NH 4 H 2 PO 4 , ADP.
  • DKDP is mainly used as a Q-switching device of medical laser equipment used in dermatology.
  • the horizontal or vertical polarized laser light passes, and when the voltage is removed, the laser light cannot pass. It may work the opposite way.
  • Medical laser equipment that requires high-speed Q-switching passes the laser when voltage is applied and the way the laser light passes when the voltage is removed can cause a lot of stress on the DKDP. The laser does not pass when voltage is applied.
  • the present invention aims to provide a queue-switching device driving device capable of solving the problem of difficult to implement high-voltage high-speed switching of several nanoseconds (ns) when using a transformer.
  • an object of the present invention is to provide a queue-switching device driving device capable of extending the life of a Pockels cell by optimally matching the impedance between the queue-switching device driving device and the Pockels cell.
  • the queue switching element driving apparatus of the present invention for solving the above-mentioned conventional problems and achieving the above object,
  • a power supply unit generating power;
  • a PWM switching pulse generator for receiving the power generated by the power supply and generating a PWM switching pulse;
  • a high voltage generator configured to primarily boost the PWM switching pulse generated by the PWM switching pulse generator and the power generated by the power supply to high voltage;
  • a voltage doubling unit for boosting the voltage of the high-pressure generating unit secondly;
  • a high voltage switching unit for turning on / off the high voltage generated by the voltage doubling unit;
  • a control unit for monitoring and controlling the high voltage boosted by the voltage doubling unit and generating a control pulse signal for controlling the high voltage switching unit;
  • An impedance matching unit for matching the impedance of the high voltage switched by the high voltage switching unit;
  • a cue-switching element unit configured to receive the impedance-matched final output voltage from the impedance matching unit and cue-switch the laser pulse.
  • the impedance matching unit is constituted by a self-biased FET, and the voltage doubler uses a double voltage circuit method using a combination of a concentrator and a diode. do.
  • the cue-switching element portion is characterized in that using the DKDP element, and further comprises a pre-processing power factor improvement circuit for improving the power factor of the high-voltage generating unit.
  • the cue-switching element driving apparatus of the present invention is capable of controlling the cue-switching pulse by speeding up several nanoseconds (ns), and matching the impedance to reduce the ringing, resulting in the There is an effect that can extend the life.
  • FIG. 1 is a block diagram of a cue-switching device driving apparatus according to the present invention.
  • FIG. 2 is a view showing a pulse waveform input to a conventional cue-switching drive element
  • FIG. 3 is a diagram illustrating an embodiment of a pulse waveform input to a cue-switching device according to the present invention.
  • the Q-switching device driving apparatus of the present invention includes a power supply 101, a PWM switching pulse generator 102, a high voltage generator 103, a voltage multiplier 104, and a high voltage switch. 105, a control unit 106, an impedance matching unit 107, and a cue-switching element 110.
  • the power supply 101 generates a DC voltage.
  • the PWM switching pulse generator 102 receives the power generated from the power supply 101 to generate a PWM switching pulse.
  • the PWM switching pulse generator 102 generates an oscillation frequency for performing a switching operation of several nanoseconds (ns) in order to increase the energy level of the laser light oscillated from the laser oscillation medium.
  • the high voltage generation unit 103 boosts the PWM switching pulse generated by the PWM switching pulse generation unit 102 and the power generated by the power supply unit 101 to a high voltage, and the voltage doubling unit 104 generates a high voltage.
  • the voltage of the first step-up is increased to the second step.
  • the voltage doubling unit 104 uses a double voltage circuit method by a combination of a capacitor and a diode.
  • the high voltage switching unit 105 switches the high voltage generated by the voltage doubling unit 104.
  • the switching refers to switching, that is, turning on / off the high voltage boosted from the high voltage generator 103 and the voltage doubling unit 104 by the high voltage switching unit 105.
  • the high voltage switching unit 105 performs a fast switching operation of the high voltage output from the voltage doubling unit 104 by several nanoseconds (ns) according to the oscillation frequency generated by the PWM switching pulse generator 102.
  • the control unit 106 monitors and controls the high voltage boosted by the voltage doubling unit 104 and generates a control pulse signal for controlling the high voltage switching unit 105.
  • the controller 106 monitors the output voltage of the voltage multiplier 104, when the boosted high voltage exceeds the reference voltage, the controller 106 limits the output high voltage of the voltage multiplier 104 to match the reference voltage.
  • the impedance matching unit 107 performs impedance matching to match the impedance of the high voltage switched by the high voltage switching unit 105.
  • the impedance matching cancels the ringing phenomenon that may occur from the high speed switching of the high voltage switching unit 105.
  • the impedance matching unit 107 is composed of a self-biased FET.
  • the cue-switching driving element 110 receives an impedance matched final output voltage from the impedance matching unit 107 to cue-switch the laser pulse.
  • the cue-switching driving element 110 uses a DKDP element, and more preferably a Pockels Cell.
  • FIG. 2 is a diagram illustrating a pulse waveform input to a conventional cue-switching driving element. As shown in Fig. 2, the voltage of the pulse waveform changes with time. The cue-switching operates until the relaxation time t2 after the fall time t1 of the pulse waveform. Except for the time t1 to t2, the high voltage is always applied to the queue-switching element, thereby shortening the life of the Pockels cell.
  • FIG. 3 is a diagram illustrating an embodiment of a pulse waveform input to a cue-switching device according to the present invention.
  • the pulse waveform input to the cue-switching element of the present invention preferably the Pockels cell, operates during the rise time t3 until the relaxation time t4 after the rise.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

The present invention relates to a device for driving a Q-switch element, and more specifically, to a device for driving a Q-switch element comprising: a power supply portion for generating power; a PWM switching pulse generation portion for receiving inputted power that is generated by the power supply portion and generating a PWM switching pulse; a high-voltage generation portion for primarily boosting the PWM switching pulse that is generated by the PWM switching pulse generation portion and the power that is generated by the power supply portion to a high voltage; a voltage multiplying portion for secondarily boosting the voltage of the high-voltage generation portion; a high-voltage switching portion for turning on/off the high voltage that is generated by the voltage multiplying portion; a control portion for monitoring and controlling the high voltage that is boosted by the voltage multiplying portion, and generating a control pulse signal for controlling the high-voltage switching portion; an impedance matching portion for matching the impedance of the high voltage that is switched by means of the high-voltage switching portion; and a Q-switching element portion for receiving inputted final output voltage, which is impedance-matched by the impedance matching portion, and Q-switching a laser pulse.

Description

큐 스위칭 소자 구동장치Queue switching element drive
본 발명은 큐 스위칭 소자 구동장치에 관한 것으로, 더욱 상세하게는 의료용 레이저 장비에 사용되는 큐 스위칭 소자 구동장치에 있어서, 포켈스셀(Pockels Cell)의 수명을 연장하기 위하여, 큐-스위칭 소자 구동장치 제작 시 안정된 고전압을 출력하고, 포켈스셀과의 임피던스 매칭에 의해 최적의 큐-스위칭을 하도록 하는 큐-스위칭 소자 구동장치에 관한 것이다.The present invention relates to a cue switching element driving device, and more particularly, to a cue switching element driving device used in medical laser equipment, in order to prolong the life of a Pockels Cell, to manufacture a cue-switching device driving device. The present invention relates to a cue-switching element driving apparatus for outputting a time stable high voltage and performing optimal cue-switching by impedance matching with a Pockels cell.
일반적으로 의료 분야에서 레이저로 치료할 경우 치료시 환자에게 최소한의 통증을 유발 하도록 해야 하고 치료 후 환자에게 최소한의 흉터를 남겨야 한다. 상기의 효과를 얻기 위해서 의료용 레이저 장비에서는 Q-스위칭 방식을 사용한다. Q-스위칭에 의해 치료를 할 경우 아주 짧은 시간에 높은 에너지로 치료하기 때문에 치료 후 Q-스위칭 방식을 사용하지 않을 때보다 치료 후 흉터가 적으며 환자의 고통을 최소화 할 수 있다.In general, in the medical field, treatment with a laser should cause minimal pain in the patient during treatment and leave a minimum scar on the patient after treatment. In order to achieve the above effects, medical laser equipment uses a Q-switching method. In case of treatment by Q-switching, it is treated with high energy in a very short time, so there is less scar after treatment and the patient's pain is less than that without using Q-switching method after treatment.
Q-스위칭을 위해서 일반적으로 선형 광학 효과를 이용하여 Q-스위칭을 하게 되는데 이 소자들을 포켈스 셀(Pockels cell)이라고 하며 여기에는 비선형 결정에 인가하는 전기장의 방향에 따라 세로 전장(Longitudinal electric field)구조와 교차 전장(Transverse electric field)구조를 갖는다. 상기에서 세로 전장 구조는 결정에 인가한 전기장의 방향이 빛이 진행하는 방향과 동일한 것으로 전기장을 가해주기 위해서 결정체의 끝 단면에 금속 증착을 한 전극을 만들어 전압을 인가하게 된다. 이 경우 포켈스 셀의 유효 구경(aperture)의 크기를 크게 할 수 있다는 장점이 있다. 상기에서 교차 전장 구조는 결정에 인가한 전기장의 방향이 빛이 진행하는 방향에 수직한 방향으로 인가 되며 이 경우에는 전기장이 결정의 측면에서 인가 되어 낮은 전압에서 구동을 할 수 있다는 장점이 있다.For Q-switching, Q-switching is generally performed using linear optical effects. These devices are called Pockels cells, which have a longitudinal electric field depending on the direction of the electric field applied to the nonlinear crystal. It has a structure and a transverse electric field structure. In the vertical electric field structure, the direction of the electric field applied to the crystal is the same as the direction of the light propagation, and the voltage is applied by making an electrode with metal deposition on the end surface of the crystal to apply the electric field. In this case, the size of the effective aperture of the Pockels cell can be increased. In the above-described cross-field structure, the direction of the electric field applied to the crystal is applied in a direction perpendicular to the direction of the light propagation. In this case, the electric field is applied from the side of the crystal, and thus, the low electric field can be driven.
일반적으로 포켈스 셀은 수백 볼트(V)에서 수십 키로볼트(kV)의 전압을 요구하기 때문에 큰 변조 깊이(Large modulation depth)를 유지하기 위해서는 고전압 증폭기가 필요하다. LiNbO3와 같이 비선형성이 강한 결정이나 전극 간격이 좁은 집적광학 변조기(Inerated optical modulator)의 경우에는 낮은 전압에서도 가능하지만 이 경우 변조하려는 빛의 출력이 작다는 단점이 있다.Because Pockels cells typically require voltages from a few hundred volts to tens of kilovolts (kV), high voltage amplifiers are needed to maintain large modulation depths. In the case of a highly nonlinear crystal such as LiNbO 3 or an integrated optical modulator with a narrow electrode gap, even at a low voltage, the disadvantage is that the light output to be modulated is small.
투명한 결정체 물질들은 비선형 편광과 연관되어 있는 여러 종류의 광 비선형성을 나타내게 된다. Q-스위칭에 사용되는 비선형 결정으로는 Potassium Di-deuterium Phosphate (KD*P = DKDP), Potassium Titanyl Phosphate (KTP), β-barium Borate (BBO), Lithium Niobate (LiNbO3), Lithium Tantalate (LiTaO3), 그리고 Ammonium Dihydrogen Phosphate (NH4H2PO4, ADP)등이 있다. 이들 각각의 결정들은 Q-스위칭을 할 레이저의 특성 즉 평균 출력이 높은 레이저나 높은 반복율을 갖는 레이저에 따라 선택 된다. 일반적으로 피부과에서 사용되는 의료용 레이저 장비의 Q-스위칭 소자로 DKDP를 주로 사용 한다.Transparent crystalline materials exhibit several types of optical nonlinearities associated with nonlinear polarization. Non-linear crystals used for Q-switching include Potassium Di-deuterium Phosphate (KD * P = DKDP), Potassium Titanyl Phosphate (KTP), β-barium Borate (BBO), Lithium Niobate (LiNbO 3 ), Lithium Tantalate (LiTaO 3 ) And Ammonium Dihydrogen Phosphate (NH 4 H 2 PO 4 , ADP). Each of these crystals is selected according to the characteristics of the laser to be Q-switched, that is, the laser having a high average power or the laser having a high repetition rate. In general, DKDP is mainly used as a Q-switching device of medical laser equipment used in dermatology.
하나의 실예로 DKDP 소자에 의해 Q-스위칭을 하기 위해서는 DKDP에 약 3~5kV의 높은 고전압을 인가하면 수평 또는 수직 편파의 레이저광이 통과하고 전압인가를 제거하면 레이저광이 통과할 수 없도록 작용하거나 그 반대로 작용할 수도 있다. 고속 Q-스위칭을 요구하는 의료용 레이저 장비는 전압을 인가할 때 레이저가 통과하고 전압을 제거 했을 때 레이저광이 통과하는 방식은 DKDP에 많은 스트레스를 줄 수 있으므로 주로 전압을 제거 했을 때 레이저가 통과하고 전압을 인가 했을때 레이저가 통과하지 않는 방식을 사용한다.For example, in order to perform Q-switching by the DKDP device, when a high voltage of about 3 to 5 kV is applied to the DKDP, the horizontal or vertical polarized laser light passes, and when the voltage is removed, the laser light cannot pass. It may work the opposite way. Medical laser equipment that requires high-speed Q-switching passes the laser when voltage is applied and the way the laser light passes when the voltage is removed can cause a lot of stress on the DKDP. The laser does not pass when voltage is applied.
상기와 같은 방식들을 구현하기 위해서 종래 기술에서는 고압 변압기를 사용하여 수 나노초(ns)를 요구하는 의료용 레이저 장비에서는 고속 스위칭을 할 수 없었을 뿐만 아니라 고압 고속 펄스로 동작할 때 변압기에서 울림 현상이 발생하는 문제점이 있었다.In order to implement the above schemes, in the prior art, high-speed switching is not possible in medical laser equipment requiring several nanoseconds (ns) using a high-voltage transformer, and a ringing phenomenon occurs in the transformer when operating with a high-voltage high-speed pulse. There was a problem.
뿐만 아니라 Q-스위칭 구동 장치와 포켈스 셀과의 임피던스를 맞추는데 어려움이 많이 있다.In addition, there is a lot of difficulty in matching the impedance of the Q-switching drive and the Pockels cell.
본 발명은 상기 기술한 단점을 보완하기 위하여, 변압기를 사용했을 때 수 나노 초(ns)의 고압 고속 스위칭을 구현하기 힘든 문제점을 해결 가능한 큐-스위칭 소자 구동장치를 제공하는 것을 목적으로 한다.The present invention aims to provide a queue-switching device driving device capable of solving the problem of difficult to implement high-voltage high-speed switching of several nanoseconds (ns) when using a transformer.
또한, 큐-스위칭 소자 구동장치와 포켈스셀과의 임피던스를 최적으로 매칭함으로써 포켈스셀의 수명을 연장 가능한 큐-스위칭 소자 구동장치를 제공하는 것을 목적으로 한다.In addition, an object of the present invention is to provide a queue-switching device driving device capable of extending the life of a Pockels cell by optimally matching the impedance between the queue-switching device driving device and the Pockels cell.
상기한 종래 문제점을 해결하고 상기 목적을 달성하기 위한 본 발명의 큐 스위칭 소자 구동장치는,The queue switching element driving apparatus of the present invention for solving the above-mentioned conventional problems and achieving the above object,
전원을 발생하는 전원공급부; 상기 전원공급부에서 발생한 전원을 입력받아 PWM 스위칭 펄스를 발생하는 PWM 스위칭 펄스 발생부; 상기 PWM 스위칭 펄스 발생부에서 생성된 PWM 스위칭 펄스와, 상기 전원공급부에서 발생된 전원을 고압으로 1차 승압시키는 고압발생부; 상기 고압발생부의 전압을 2차 승압시키는 전압배가부; 상기 전압배가부에서 생성된 고전압을 온/오프하는 고압스위칭부; 상기 전압배가부에서 승압된 고전압을 모니터링하여 제어하고, 상기 고압스위칭부를 제어하기 위한 제어 펄스 신호를 생성하는 제어부; 상기 고압스위칭부에 의해 스위칭 된 고전압의 임피던스를 맞추기 위한 임피던스 매칭부; 및, 상기 임피던스 매칭부로부터 임피던스 매칭된 최종 출력전압을 입력 받아, 레이저 펄스를 큐-스위칭 하는 큐-스위칭 소자부;를 포함하여 구성하는 것을 특징으로 한다.A power supply unit generating power; A PWM switching pulse generator for receiving the power generated by the power supply and generating a PWM switching pulse; A high voltage generator configured to primarily boost the PWM switching pulse generated by the PWM switching pulse generator and the power generated by the power supply to high voltage; A voltage doubling unit for boosting the voltage of the high-pressure generating unit secondly; A high voltage switching unit for turning on / off the high voltage generated by the voltage doubling unit; A control unit for monitoring and controlling the high voltage boosted by the voltage doubling unit and generating a control pulse signal for controlling the high voltage switching unit; An impedance matching unit for matching the impedance of the high voltage switched by the high voltage switching unit; And a cue-switching element unit configured to receive the impedance-matched final output voltage from the impedance matching unit and cue-switch the laser pulse.
본 발명의 큐 스위칭 소자 구동장치에 있어서, 상기 임피던스 매칭부는 자가 바이어스 방식의 FET로 구성하는 것을 특징으로 하고, 상기 전압배가부는 콘센더 및 다이오드의 조합에 의한 배전압 회로방식을 사용하는 것을 특징으로 한다.In the apparatus for driving a queue switching element of the present invention, the impedance matching unit is constituted by a self-biased FET, and the voltage doubler uses a double voltage circuit method using a combination of a concentrator and a diode. do.
또한, 상기 큐-스위칭 소자부는 DKDP소자를 사용하는 것을 특징으로 하며, 고압발생부의 역률을 개선하기 위한 전처리 역률 개선 회로를 추가적으로 구성하는 것을 특징으로 한다.In addition, the cue-switching element portion is characterized in that using the DKDP element, and further comprises a pre-processing power factor improvement circuit for improving the power factor of the high-voltage generating unit.
이러한 본 발명의 특징에 따르면, 본 발명의 큐-스위칭 소자 구동장치는 큐-스위칭 펄스를 수 나노초(ns) 대로 고속화 하여 제어 가능하고, 임피던스를 매칭하여 링깅을 감소시킴으로써 결과적으로 큐-스위칭 소자의 수명을 연장시킬 수 있다는 효과가 있다.According to this aspect of the present invention, the cue-switching element driving apparatus of the present invention is capable of controlling the cue-switching pulse by speeding up several nanoseconds (ns), and matching the impedance to reduce the ringing, resulting in the There is an effect that can extend the life.
도 1은 본 발명에 따른 큐-스위칭 소자 구동장치의 블럭도,1 is a block diagram of a cue-switching device driving apparatus according to the present invention;
도 2는 종래의 큐-스위칭 구동 소자에 입력되는 펄스 파형을 나타낸 도면,2 is a view showing a pulse waveform input to a conventional cue-switching drive element,
도 3은 본 발명에 따른 큐-스위칭 소자에 입력되는 펄스 파형의 실시 예를 나타낸 도면.3 is a diagram illustrating an embodiment of a pulse waveform input to a cue-switching device according to the present invention.
이하, 본 발명의 바람직한 실시 예를 첨부한 도면을 참고로 하여 상세하게 설명한다. Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.
도 1은 본 발명에 따른 큐-스위칭 소자 구동장치의 블럭도이다. 도 1에 도시한 바와 같이, 본 발명의 큐-스위칭 소자 구동장치는 전원공급부(101), PWM 스위칭 펄스 발생부(102), 고압 발생부(103), 전압배가부(104), 고압 스위칭부(105), 제어부(106), 임피던스 매칭부(107) 및 큐-스위칭 소자(110)로 구성된다.1 is a block diagram of a cue-switching device driving apparatus according to the present invention. As shown in FIG. 1, the Q-switching device driving apparatus of the present invention includes a power supply 101, a PWM switching pulse generator 102, a high voltage generator 103, a voltage multiplier 104, and a high voltage switch. 105, a control unit 106, an impedance matching unit 107, and a cue-switching element 110.
전원공급부(101)는 DC 전압을 발생한다. PWM 스위칭 펄스 발생부(102)는 전원공급부(101)에서 발생한 전원을 입력받아 PWM 스위칭 펄스를 발생한다. PWM 스위칭 펄스 발생부(102)는 레이저 발진용 매질체로부터 발진되는 레이저광의 에너지 준위를 높이기 위하여 수 나노초(ns) 대의 스위칭 동작을 수행하기 위한 발진주파수를 생성한다.The power supply 101 generates a DC voltage. The PWM switching pulse generator 102 receives the power generated from the power supply 101 to generate a PWM switching pulse. The PWM switching pulse generator 102 generates an oscillation frequency for performing a switching operation of several nanoseconds (ns) in order to increase the energy level of the laser light oscillated from the laser oscillation medium.
*고압발생부(103)는 PWM 스위칭 펄스 발생부(102)에서 생성된 PWM 스위칭 펄스와, 전원공급부(101)에서 발생된 전원을 고압으로 1차 승압시키고, 전압배가부(104)는 고압발생부(103)에서 1차 승압된 의 전압을 2차 승압시킨다. 전압배가부(104)는 콘덴서 및 다이오드의 조합에 의한 배전압 회로방식을 사용한다.The high voltage generation unit 103 boosts the PWM switching pulse generated by the PWM switching pulse generation unit 102 and the power generated by the power supply unit 101 to a high voltage, and the voltage doubling unit 104 generates a high voltage. In step 103, the voltage of the first step-up is increased to the second step. The voltage doubling unit 104 uses a double voltage circuit method by a combination of a capacitor and a diode.
고압스위칭부(105)는 전압배가부(104)에서 생성된 고전압을 스위칭한다. 여기서, 스위칭은, 고압발생부(103)와 전압배가부(104)로부터 승압된 고전압을 고압스위칭부(105)에서 스위칭(Switching), 즉 온/오프 시킴을 말한다. 고압스위칭부(105)는 PWM 스위칭 펄스 발생부(102)에서 생성된 발진 주파수에 따라서, 전압배가부(104)에서 출력된 고전압을 수 나노초(ns) 대로 빠른 스위칭 동작을 수행한다.The high voltage switching unit 105 switches the high voltage generated by the voltage doubling unit 104. Here, the switching refers to switching, that is, turning on / off the high voltage boosted from the high voltage generator 103 and the voltage doubling unit 104 by the high voltage switching unit 105. The high voltage switching unit 105 performs a fast switching operation of the high voltage output from the voltage doubling unit 104 by several nanoseconds (ns) according to the oscillation frequency generated by the PWM switching pulse generator 102.
제어부(106)에서는 전압배가부(104)에서 승압된 고전압을 모니터링하여 제어하고, 상기 고압스위칭부(105)를 제어하기 위한 제어 펄스 신호를 생성한다. 제어부(106)에서 전압배가부(104)의 출력전압을 모니터링 할 때, 승압된 고전압이 기준 전압을 초과하는 경우, 전압배가부(104)의 출력 고전압을 기준 전압에 맞추도록 제한한다.The control unit 106 monitors and controls the high voltage boosted by the voltage doubling unit 104 and generates a control pulse signal for controlling the high voltage switching unit 105. When the controller 106 monitors the output voltage of the voltage multiplier 104, when the boosted high voltage exceeds the reference voltage, the controller 106 limits the output high voltage of the voltage multiplier 104 to match the reference voltage.
임피던스 매칭부(107)는 고압스위칭부(105)에 의해 스위칭 된 고전압의 임피던스를 맞추기 위해 임피던스 매칭을 수행한다. 임피던스 매칭에 의해, 고압스위칭부(105)의 고속 스위칭으로부터 발생 가능한 링깅(Ringing) 현상이 상쇄된다. 더욱 바람직하게는, 임피던스 매칭부(107)는 자가 바이어스 방식의 FET로 구성된다.The impedance matching unit 107 performs impedance matching to match the impedance of the high voltage switched by the high voltage switching unit 105. The impedance matching cancels the ringing phenomenon that may occur from the high speed switching of the high voltage switching unit 105. More preferably, the impedance matching unit 107 is composed of a self-biased FET.
그리고, 큐-스위칭 구동소자(110)는 임피던스 매칭부(107)로부터 임피던스 매칭된 최종 출력전압을 입력 받아, 레이저 펄스를 큐-스위칭 한다. 본 발명의 큐-스위칭 소자 구동장치에서는, 큐-스위칭 구동소자(110)를 DKDP 소자를 사용하며, 더욱 바람직하게는 포켈스 셀(Pockels Cell)을 사용한다.The cue-switching driving element 110 receives an impedance matched final output voltage from the impedance matching unit 107 to cue-switch the laser pulse. In the cue-switching element driving apparatus of the present invention, the cue-switching driving element 110 uses a DKDP element, and more preferably a Pockels Cell.
도 2는 종래의 큐-스위칭 구동 소자에 입력되는 펄스 파형을 나타낸 도면이다. 도 2에 도시한 바와 같이, 펄스 파형의 전압이 시간에 따라 변화한다. 펄스 파형의 하강 시간(t1) 후 완화 시간(t2)까지 큐-스위칭이 동작한다. t1 내지 t2 시간 외에는 큐-스위칭 소자에 항상 고전압이 걸려 있으므로 포켈스 셀의 수명을 단축시킬 수 있다.2 is a diagram illustrating a pulse waveform input to a conventional cue-switching driving element. As shown in Fig. 2, the voltage of the pulse waveform changes with time. The cue-switching operates until the relaxation time t2 after the fall time t1 of the pulse waveform. Except for the time t1 to t2, the high voltage is always applied to the queue-switching element, thereby shortening the life of the Pockels cell.
도 3은 본 발명에 따른 큐-스위칭 소자에 입력되는 펄스 파형의 실시 예를 나타낸 도면이다. 도 3에 도시한 바와 같이, 본 발명의 큐-스위칭 소자, 바람직하게는 포켈스 셀에 입력되는 펄스 파형은, 상승 시간(t3)동안 상승 후 완화 시간(t4)까지 큐-스위칭이 동작한다. 3 is a diagram illustrating an embodiment of a pulse waveform input to a cue-switching device according to the present invention. As shown in Fig. 3, the pulse waveform input to the cue-switching element of the present invention, preferably the Pockels cell, operates during the rise time t3 until the relaxation time t4 after the rise.
이상에서 설명한 바와 같이, 본 발명의 상세한 설명에서는 본 발명의 바람직한 실시 예에 관하여 설명하였으나, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자라면 본 발명의 범주에서 벗어나지 않는 한도 내에서 여러 가지 변형이 가능함은 물론이다. 따라서 본 발명의 권리 범위는 설명된 실시 예에 국한되어 정해져서는 안되며, 후술하는 청구범위뿐만 아니라, 이와 균등한 것들에 의해 정해져야 한다.As described above, in the detailed description of the present invention has been described with respect to preferred embodiments of the present invention, those skilled in the art to which the present invention pertains various modifications without departing from the scope of the present invention Of course this is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents thereof, as well as the following claims.

Claims (5)

  1. 전원을 발생하는 전원공급부; A power supply unit generating power;
    상기 전원공급부에서 발생한 전원을 입력받아 PWM 스위칭 펄스를 발생하는 PWM 스위칭 펄스 발생부;A PWM switching pulse generator for receiving the power generated by the power supply and generating a PWM switching pulse;
    상기 PWM 스위칭 펄스 발생부에서 생성된 PWM 스위칭 펄스와, 상기 전원공급부에서 발생된 전원을 고압으로 1차 승압시키는 고압발생부;A high voltage generator configured to primarily boost the PWM switching pulse generated by the PWM switching pulse generator and the power generated by the power supply to high voltage;
    상기 고압발생부의 전압을 2차 승압시키는 전압배가부;A voltage doubling unit for boosting the voltage of the high-pressure generating unit secondly;
    상기 전압배가부에서 생성된 고전압을 온/오프하는 고압스위칭부;A high voltage switching unit for turning on / off the high voltage generated by the voltage doubling unit;
    상기 전압배가부에서 승압된 고전압을 모니터링하여 제어하고, 상기 고압스위칭부를 제어하기 위한 제어 펄스 신호를 생성하는 제어부;A control unit for monitoring and controlling the high voltage boosted by the voltage doubling unit and generating a control pulse signal for controlling the high voltage switching unit;
    상기 고압스위칭부에 의해 스위칭 된 고전압의 임피던스를 맞추기 위한 임피던스 매칭부; 및,An impedance matching unit for matching the impedance of the high voltage switched by the high voltage switching unit; And,
    상기 임피던스 매칭부로부터 임피던스 매칭된 최종 출력전압을 입력 받아, 레이저 펄스를 큐-스위칭 하는 큐-스위칭 소자부;를 포함하여 구성하는 것을 특징으로 하는 큐-스위칭 소자 구동장치.And a cue-switching element unit configured to receive the impedance-matched final output voltage from the impedance matching unit and cue-switch the laser pulse.
  2. 제 1항에 있어서, The method of claim 1,
    상기 임피던스 매칭부는 자가 바이어스 방식의 FET로 구성하는 것을 특징으로 하는 큐-스위칭 소자 구동장치.And the impedance matching unit is configured as a self-biased FET.
  3. 제 1항에 있어서, The method of claim 1,
    상기 전압배가부는 콘센더 및 다이오드의 조합에 의한 배전압 회로방식을 사용하는 것을 특징으로 하는 큐-스위칭 소자 구동장치.And the voltage multiplier uses a double voltage circuit by a combination of a concentrator and a diode.
  4. 제 1항에 있어서, The method of claim 1,
    상기 큐-스위칭 소자부는 DKDP소자를 사용하는 것을 특징으로 하는 큐-스위칭 소자 구동장치.And the cue-switching element unit uses a DKDP element.
  5. 제 1항에 있어서, The method of claim 1,
    상기 고압발생부의 역률을 개선하기 위한 전처리 역률 개선 회로를 추가적으로 구성하는 것을 특징으로 하는 큐-스위칭 소자 구동장치.And a pre-processing power factor improving circuit for improving the power factor of the high-pressure generator.
PCT/KR2012/007476 2012-04-26 2012-09-19 Device for driving q-switch element WO2013162129A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243951A (en) * 1978-06-12 1981-01-06 Rca Corporation High repetition rate driver circuit for modulation of injection lasers
KR20020060342A (en) * 2001-01-10 2002-07-18 한민수 Igniter circuit of the high intensity discharge lamp
US20030214983A1 (en) * 2002-05-20 2003-11-20 Shandong University Electrooptic Q-switch element made of crystal
KR100821563B1 (en) * 2007-12-18 2008-04-14 주식회사 루트로닉 Shock-Switching Driver of Laser Generator for High Density Laser Generation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243951A (en) * 1978-06-12 1981-01-06 Rca Corporation High repetition rate driver circuit for modulation of injection lasers
KR20020060342A (en) * 2001-01-10 2002-07-18 한민수 Igniter circuit of the high intensity discharge lamp
US20030214983A1 (en) * 2002-05-20 2003-11-20 Shandong University Electrooptic Q-switch element made of crystal
KR100821563B1 (en) * 2007-12-18 2008-04-14 주식회사 루트로닉 Shock-Switching Driver of Laser Generator for High Density Laser Generation

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