WO2012169826A3 - Electricity generating device using a nanowire - Google Patents
Electricity generating device using a nanowire Download PDFInfo
- Publication number
- WO2012169826A3 WO2012169826A3 PCT/KR2012/004539 KR2012004539W WO2012169826A3 WO 2012169826 A3 WO2012169826 A3 WO 2012169826A3 KR 2012004539 W KR2012004539 W KR 2012004539W WO 2012169826 A3 WO2012169826 A3 WO 2012169826A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nanowire
- light
- receiving unit
- generating device
- electricity generating
- Prior art date
Links
- 239000002070 nanowire Substances 0.000 title abstract 9
- 230000005611 electricity Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to an electricity generating device using a nanowire, wherein the device comprises a nanowire constituting an N-type semiconductor and a light-receiving unit constituted from a P-type semiconductor, and wherein the nanowire is constituted from a substance having a piezoelectric effect whereby mechanical energy is converted into electrical energy, and the nanowire is connected to the light-receiving unit in such a way that pressure applied to the light-receiving unit is relayed to the nanowire, while a PN junction is formed when the light-receiving unit and the nanowire are connected. Once the nanowire and the light-receiving unit have been connected and a PN junction has been formed, solar energy can be absorbed so as to generate a current and, at the same time, vibrations or pressure transmitted to the light-receiving unit can be transmitted to the nanowire having the piezoelectric effect so as to generate a current.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110056420A KR101221501B1 (en) | 2011-06-10 | 2011-06-10 | Apparatus of generating electricity by using nano-wires |
KR10-2011-0056420 | 2011-06-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012169826A2 WO2012169826A2 (en) | 2012-12-13 |
WO2012169826A3 true WO2012169826A3 (en) | 2013-03-07 |
Family
ID=47296620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2012/004539 WO2012169826A2 (en) | 2011-06-10 | 2012-06-08 | Electricity generating device using a nanowire |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101221501B1 (en) |
WO (1) | WO2012169826A2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101459625B1 (en) * | 2013-06-19 | 2014-11-07 | 충북대학교 산학협력단 | Electric power generator by using aluminum foil and piezo-electric materials |
WO2015004231A1 (en) * | 2013-07-10 | 2015-01-15 | Universitat Autonoma De Barcelona | Electrode for a nanogenerator with a piezoelectric material made of nanowires |
CN105591166B (en) * | 2014-10-24 | 2017-10-31 | 华中科技大学 | A kind of TRT and its manufacture method based on carbon material |
CN106328802B (en) * | 2016-09-27 | 2019-02-12 | 电子科技大学 | A kind of piezoelectricity bipolar junction transistor |
CN110690312B (en) * | 2019-10-31 | 2024-10-29 | 华南理工大学 | Flexible ultraviolet detector obtained by nondestructive transfer process of GaN nano-pillar array grown on graphene substrate and method |
CN111029337B (en) * | 2019-11-18 | 2021-12-21 | 浙江大学 | Multi-energy collection system based on semiconductor heterogeneous integration |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100062729A (en) * | 2008-12-02 | 2010-06-10 | 삼성전자주식회사 | Apparatus for storing energy and method for manufacturing the same |
KR20100073972A (en) * | 2008-12-22 | 2010-07-01 | 삼성전자주식회사 | Apparatus for generating electrical energy and method for manufacturing the same |
KR20110021637A (en) * | 2009-08-25 | 2011-03-04 | 삼성전자주식회사 | Apparatus for generating electrical energy and method for manufacturing the same |
KR20110040254A (en) * | 2009-10-13 | 2011-04-20 | 삼성전자주식회사 | Apparatus for generating electrical energy |
-
2011
- 2011-06-10 KR KR1020110056420A patent/KR101221501B1/en active IP Right Grant
-
2012
- 2012-06-08 WO PCT/KR2012/004539 patent/WO2012169826A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100062729A (en) * | 2008-12-02 | 2010-06-10 | 삼성전자주식회사 | Apparatus for storing energy and method for manufacturing the same |
KR20100073972A (en) * | 2008-12-22 | 2010-07-01 | 삼성전자주식회사 | Apparatus for generating electrical energy and method for manufacturing the same |
KR20110021637A (en) * | 2009-08-25 | 2011-03-04 | 삼성전자주식회사 | Apparatus for generating electrical energy and method for manufacturing the same |
KR20110040254A (en) * | 2009-10-13 | 2011-04-20 | 삼성전자주식회사 | Apparatus for generating electrical energy |
Also Published As
Publication number | Publication date |
---|---|
WO2012169826A2 (en) | 2012-12-13 |
KR20120137097A (en) | 2012-12-20 |
KR101221501B1 (en) | 2013-01-15 |
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