WO2012043611A1

WO2012043611A1 - Organic el display device and method for manufacturing same

Info

Publication number: WO2012043611A1
Application number: PCT/JP2011/072154
Authority: WO
Inventors: 勇毅小林; 充浩向殿; 悦昌藤田; 別所　久徳
Original assignee: シャープ株式会社
Priority date: 2010-09-30
Filing date: 2011-09-28
Publication date: 2012-04-05

Abstract

Disclosed is an organic EL display device which comprises: a substrate; an organic EL element that has a first electrode that is formed on the substrate, an edge cover that covers an edge portion of the first electrode, an organic layer including an organic light emitting layer, and a second electrode; and an optical reflector on the lateral surface of the edge cover. The optical reflector is arranged between the edge cover and the organic layer so as to be in contact with the organic layer.

Description

Organic EL display device and manufacturing method thereof

The present invention relates to an organic EL display device and a manufacturing method thereof.
This application claims priority based on Japanese Patent Application No. 2010-220133 filed in Japan on September 30, 2010, the contents of which are incorporated herein by reference.

Generally, electroluminescence (EL: ELECTRO Luminescence) light-emitting elements have high visibility because they are self-luminous. Moreover, since the EL light emitting device is a completely solid device, it has excellent impact resistance and is easy to handle. For this reason, the EL light emitting element is attracting attention as a light emitting element in various display devices. The EL light emitting element includes an inorganic EL element using an inorganic compound as a light emitting material and an organic EL element using an organic compound as a light emitting material. Among these, organic EL elements have been actively researched for practical use since the applied voltage can be significantly reduced.

An organic EL display device, which is a light emitting device using such organic EL elements, has full-color display by creating various colors typified by white by juxtaposing pixels emitting red, green, and blue as one unit. It is carried out.

In the case of an organic EL display device, in order to achieve full color display, a method of forming red, green, and blue pixels by coating an organic light emitting layer by a mask vapor deposition method using a shadow mask is generally used. However, such a method requires improvement in mask processing accuracy, mask alignment accuracy, and mask size.

Manufacture of large-sized displays requires the production and processing of masks that support large substrates, leading to an increase in display manufacturing costs due to larger masks. Therefore, for example, an organic EL display device having a light emitting layer that emits blue to blue-green light, and a green layer composed of a phosphor layer that absorbs blue to blue-green light emitted from the organic EL display device as excitation light and emits green light. There has been proposed a method for realizing full-color display by combining a pixel, a red pixel composed of a phosphor layer that emits red light, and a blue pixel composed of a blue color filter that improves color purity (for example, Patent Documents). 1).

However, in the method described in Patent Document 1, since the light emission from the phosphor layer is isotropic, loss when taking out the light emission from the phosphor layer to the outside is large, and the obtained light emission efficiency is low.

For this reason, for example, by providing a partition wall between adjacent fluorescent layers and forming a reflective film on the side surface of the partition wall, the light irradiated on the side surface is reflected on the front side (outgoing side), and the front side ( A method for efficiently extracting light from the emission side) has been proposed (see, for example, Patent Document 2).

Japanese Patent No. 2795932 International Publication No. 2006/022123

However, only by forming a reflective film on the side surface of the partition wall, among the light that isotropically spread from the phosphor layer, the light irradiated toward the side surface can be reflected to the front side (outgoing side). The light (fluorescent component) spreading toward the organic EL element, which is the direction opposite to the emission side, is still lost, and there is a limit to the increase in the amount of light that can be extracted from the front side (emission side).

One embodiment of the present invention has been made in view of such a conventional situation, and an object thereof is to provide a high-efficiency (high luminance) organic EL display device and a manufacturing method thereof.

An organic EL display device according to an aspect of the present invention includes a substrate, a first electrode formed on the substrate, an edge cover that covers an end of the first electrode, an organic layer including an organic light emitting layer, and a second electrode An organic EL element including: a phosphor layer that is excited by the excitation light generated in the organic EL element to emit light; a barrier that surrounds the side of the phosphor layer; and a first part that covers a part of the edge cover. An optical reflector and a second optical reflector covering the barrier are provided.

In the organic EL display device according to an aspect of the present invention, the first optical reflector may be formed so as to further cover the first electrode.

In the organic EL display device according to an aspect of the present invention, the tip of the barrier may be in close contact with the edge cover.

In the organic EL display device according to an aspect of the present invention, the first and second optical reflectors may have a reflectance with respect to visible light of 80% or more.

In the organic EL display device according to an aspect of the present invention, the first and second optical reflectors may contain aluminum or silver.

In the organic EL display device according to an aspect of the present invention, at least one of the edge cover and the barrier may have a tapered portion formed in a tapered shape.

In the organic EL display device according to an aspect of the present invention, the height of the barrier may be larger than the thickness of the phosphor layer.

In the organic EL display device according to an aspect of the present invention, the phosphor layer may contain an inorganic phosphor.

The organic EL display device according to one embodiment of the present invention may further include an active element that drives the organic EL element.

In the organic EL display device according to an aspect of the present invention, the first optical reflector is a first reflective film that covers a part of the edge cover, and the second optical reflector is a first reflective film that covers the barrier. Two reflective films may be used.

An organic EL display device according to an aspect of the present invention includes a substrate, a first electrode formed on the substrate, an edge cover that covers an end of the first electrode, an organic layer including an organic light emitting layer, and a second electrode An organic EL element comprising: a phosphor layer that is excited by the excitation light generated in the organic EL element and emits light; a barrier that surrounds the side of the phosphor layer and is formed of a first reflector; and the edge A second optical reflector covering a part of the surface of the cover;

An organic EL display device according to an aspect of the present invention includes a substrate, a first electrode formed on the substrate, an edge cover that covers an end of the first electrode, an organic layer including an organic light emitting layer, and a second electrode And an optical reflector on the side surface of the edge cover, the optical reflector being in contact with the organic layer and provided between the edge cover and the organic layer.

In the organic EL display device according to an aspect of the present invention, the optical reflector may be formed so as to further cover the first electrode.

In the organic EL display device according to an aspect of the present invention, the optical reflector may have a reflectance with respect to visible light of 80% or more.

In the organic EL display device according to one aspect of the present invention, the optical reflector may contain aluminum or silver.

In the organic EL display device according to an aspect of the present invention, the edge cover may have a tapered portion formed in a tapered shape.

The organic EL display device according to an aspect of the present invention may further include an active element that drives the organic EL element.

In the organic EL display device according to an aspect of the present invention, the optical reflector may be a reflective film that covers a side surface of the edge cover.

A method for manufacturing an organic EL display device according to an aspect of the present invention includes a first electrode formed on one side of a substrate, an edge cover covering an edge portion of the first electrode, an organic layer including at least an organic light emitting layer, and a first electrode An organic EL element having two electrodes; a phosphor layer that emits light by being excited by excitation light generated in the organic EL element; and a barrier that surrounds the phosphor layer, and a part of at least a surface of the edge cover And a method of manufacturing an organic EL display device in which an optical reflector is formed on at least a part of the surface of the barrier, the method including the step of forming the phosphor layer by a screen printing method, an ink jet method, or a nozzle coating method. .

According to one embodiment of the present invention, a highly efficient (high brightness) organic EL display device and a method for manufacturing the same can be provided.

1 is a cross-sectional view illustrating an organic EL display device according to a first embodiment of the present invention. 10 is a cross-sectional view showing an organic EL display device according to Comparative Example 1. FIG. 10 is a cross-sectional view showing an organic EL display device according to Comparative Example 1. FIG. 10 is a cross-sectional view showing an organic EL display device according to Comparative Example 1. FIG. 1 is a cross-sectional view illustrating an organic EL display device according to Example 1. FIG. 1 is a cross-sectional view illustrating an organic EL display device according to Example 1. FIG. 1 is a cross-sectional view illustrating an organic EL display device according to Example 1. FIG. 10 is a cross-sectional view showing an organic EL display device according to Comparative Example 2. FIG. 6 is a cross-sectional view showing an organic EL display device according to Example 2. FIG. 6 is a cross-sectional view showing an organic EL display device according to Example 3. FIG. 6 is a cross-sectional view showing an organic EL display device according to Example 3. FIG. 6 is a cross-sectional view showing an organic EL display device according to Example 3. FIG. FIG. 10 is a cross-sectional view illustrating an organic EL display device according to a modification example of Example 3. FIG. 10 is a cross-sectional view illustrating an organic EL display device according to another modification of Example 3. 6 is a cross-sectional view showing an organic EL display device according to Example 4. FIG. 6 is a cross-sectional view showing an organic EL display device according to Example 4. FIG. 6 is a cross-sectional view showing an organic EL display device according to Example 4. FIG. It is a schematic diagram which shows the structural example of the control part of the organic electroluminescence display of this invention. It is an external view which shows the mobile telephone which is an example of application of the organic electroluminescence display of this invention. It is an external view which shows the thin television which is one application example of the organic electroluminescence display of this invention. It is sectional drawing which shows the organic electroluminescence display which concerns on the comparative example 3. It is sectional drawing which shows the organic electroluminescence display which concerns on the comparative example 3. 10 is a cross-sectional view showing an organic EL display device according to Example 5. FIG. 10 is a cross-sectional view showing an organic EL display device according to Example 5. FIG.

(First embodiment)
Hereinafter, an organic EL display device according to one embodiment of the present invention will be described with reference to the drawings. Note that the embodiment described below is specifically described for better understanding of the gist of the invention, and does not limit one embodiment of the present invention unless otherwise specified. In addition, in the drawings used in the following description, in order to make the characteristics of one embodiment of the present invention easier to understand, a part that is a main part may be shown in an enlarged manner for convenience. It is not always the same as actual.

FIG. 1 is a schematic cross-sectional view showing an example of an organic EL display device according to an embodiment of the present invention.
The organic EL display device 1 includes a first substrate 10, an organic EL element 19, and a second substrate (sealing substrate) 21. The first substrate 10 includes, for example, a TFT (Thin Film Transistor) circuit 18. The organic EL element 19 is formed on the one surface side 10 a of the first substrate 10. The second substrate 21 is formed to face the first substrate 10.

The organic EL element 19 includes a first electrode (pixel electrode) 11, an edge cover 12, a reflective film (optical reflector) 13, an organic layer (organic EL layer) 14, and a second electrode (counter electrode) 15. I have. The first electrode 11 is arranged on the one surface side 10 a of the first substrate 10. The edge cover 12 covers the edge portion (end portion) of the first electrode 11. The reflective film 13 covers the first electrode 11 and the edge cover 12. The organic layer 14 is formed on the reflective film (optical reflector) 13 in order. The organic layer 14 includes at least an organic light emitting layer.

On the other hand, the second substrate (sealing substrate) 21 includes a phosphor layer 22 (a blue phosphor layer 22B, a green phosphor layer 22G, and a red phosphor layer 22R) on one surface side 21a facing the first substrate 10. ) And a barrier 23 are formed. The phosphor layer 22 is excited by the excitation light generated in the organic EL element 19 and emits light. The barrier 23 surrounds the side of the phosphor layer 22. Furthermore, a reflective film (optical reflector) 17 is formed on the surface of the barrier 23.

Hereinafter, although each structural member which comprises the organic electroluminescence display 1 which concerns on 1 aspect of this invention mentioned above, and its formation method are demonstrated concretely, 1 aspect of this invention is limited to these structural members and formation method. It is not a thing.

As the first substrate 10 used in the present embodiment, for example, an inorganic substrate made of glass, quartz, etc., a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, etc., an insulating substrate such as a ceramic substrate made of alumina, Alternatively, a metal substrate made of aluminum (Al), iron (Fe), or the like, or a substrate coated with an insulator made of silicon oxide (SiO ₂ ), an organic insulating material, or the like on the substrate, a metal substrate made of Al, etc. And a substrate obtained by subjecting the surface of the substrate to insulation treatment by a method such as anodic oxidation.

Furthermore, a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material are more preferable. This eliminates moisture permeation that occurs when a plastic substrate is used as the substrate of an organic EL display device (organic EL elements are known to deteriorate even with a small amount of moisture). Is possible. Also, leakage (short) due to protrusions on the metal substrate that can occur when the metal substrate is used as an organic EL substrate (the organic layer has a very thin film thickness of about 100 nm to 200 nm. It is known that leakage (short circuit) occurs.

Further, when forming the TFT circuit 18 for active matrix driving, it is preferable to use a substrate that does not melt at a temperature of 500 ° C. or less and does not cause distortion. In addition, since a general metal substrate has a coefficient of thermal expansion different from that of glass, it is difficult to form a TFT on the metal substrate with a conventional production apparatus, but the linear expansion coefficient is 1 × 10 ⁻⁵ / ° C. or less. By using a metal substrate which is an iron-nickel alloy of this type and adjusting the linear expansion coefficient to glass, it becomes possible to form TFTs on the metal substrate at low cost using a conventional production apparatus.

In the case of a plastic substrate, since the heat resistant temperature is lower than that of a glass substrate, the TFT circuit 18 is formed on the glass substrate and then transferred to the plastic substrate, thereby transferring the TFT onto the plastic substrate. It is possible to do.
Further, when the phosphor layer 22 is on the second electrode 15 side, that is, when light emitted from the organic layer 14 is taken out from the side opposite to the first substrate 10, there is no restriction on the transparency of the substrate. When the phosphor layer 22 is on the first electrode 15 side, that is, when light emitted from the organic layer 14 is taken out through the first substrate 10, in order to take out light emitted from the organic layer 14 to the outside as a substrate to be used. It is necessary to use a transparent or translucent substrate.

The TFT circuit 18 formed on the first substrate 10 is formed in advance on the one surface 10a of the first substrate 10 before the organic EL element 19 is formed, and functions as a switching device and a driving device.
As the TFT circuit 18 used in the present embodiment, for example, a known TFT circuit may be used. Further, a metal-insulator-metal (MIM) diode can be used in place of the TFT circuit 18.

The TFT circuit 18 that can be used for an active drive type organic EL display and an organic EL display device can be formed using a known material, structure, and formation method. As an active layer material of the TFT circuit, for example, amorphous silicon (amorphous silicon), polycrystalline silicon (polysilicon), microcrystalline silicon, inorganic semiconductor materials such as cadmium selenide, zinc oxide, indium oxide-gallium oxide, etc. -Oxide semiconductor materials such as zinc oxide or organic semiconductor materials such as polythiophene derivatives, thiophene oligomers, poly (p-ferylene vinylene) derivatives, naphthacene and pentacene. Examples of the structure of the TFT circuit 18 include a staggered type, an inverted staggered type, a top gate type, and a coplanar type.

Examples of the method for forming the active layer constituting the TFT circuit 18 include the following methods. (1) Method of ion doping impurities into amorphous silicon formed by plasma induced chemical vapor deposition (PECVD) method, (2) Amorphous by low pressure chemical vapor deposition (LPCVD) method using silane (SiH ₄ ) gas After forming silicon and crystallizing amorphous silicon by solid phase growth to obtain polysilicon, ion doping by ion implantation, (3) LPCVD using Si ₂ H ₆ gas or SiH ₄ gas Amorphous silicon is formed by the PECVD method used, annealed by a laser such as an excimer laser, and the amorphous silicon is crystallized to obtain polysilicon, followed by ion doping (low temperature process), (4) LPCVD method or PECVD A polysilicon layer is formed by the method 10 A gate insulating film formed by thermal oxidation at 0 ℃ above, thereon, a gate electrode of the n ⁺ polysilicon, then, a method of performing ion doping (high temperature process), (5) an organic semiconductor material (6) A method for obtaining a single crystal film of an organic semiconductor material.

The gate insulating film of the TFT circuit 18 used in this embodiment can be formed using a known material. Examples thereof include SiO ₂ formed by PECVD, LPCVD, etc., or SiO ₂ obtained by thermally oxidizing a polysilicon film.

Further, the signal electrode line, the scanning electrode line, the common electrode line, the first drive electrode, and the second drive electrode of the TFT circuit 18 used in this embodiment can be formed using a known material, for example, tantalum. (Ta), aluminum (Al), copper (Cu), and the like. The TFT of the organic EL panel according to this embodiment can be formed with the above-described configuration, but is not limited to these materials, structures, and formation methods.

An interlayer insulating film that can be used for an active drive type organic EL display device can be formed using a known material, for example, silicon oxide (SiO ₂ ), silicon nitride (SiN, or Si ₂ N). ₄ ), an inorganic material such as tantalum oxide (TaO or Ta ₂ O ₅ ), or an organic material such as an acrylic resin or a resist material.
Examples of the formation method include dry processes such as chemical vapor deposition (CVD) and vacuum deposition, and wet processes such as spin coating. Moreover, it can also pattern by the photolithographic method etc. as needed.

When light emitted from the organic layer 14 is taken out from the opposite side (second electrode 15 side) of the first substrate 10, external light is incident on the TFT circuit 18 formed on the one surface 10a of the first substrate 10, For the purpose of preventing changes in the characteristics of the TFT circuit 18, it is also preferable to form a light-shielding insulating film having light-shielding properties. In addition, the above insulating film and a light-shielding insulating film can be used in combination. Examples of the light-shielding interlayer insulating film include, for example, pigments or dyes such as phthalocyanine and quinaclonone dispersed in a polymer resin such as polyimide, color resist, black matrix material, and inorganic insulating materials such as Ni _x Zn _y Fe ₂ O ₄ Etc. However, this embodiment is not limited to these materials and forming methods.

In the active drive type organic EL display device 1, when the TFT circuit 18 is formed on the one surface side 10 a of the first substrate 10, unevenness is formed on the surface thereof, and the organic EL element 19 is formed by, for example, a pixel. There is a possibility that phenomena such as an electrode defect, an organic layer defect, a disconnection of the second electrode, a short circuit between the first electrode and the counter electrode, and a decrease in breakdown voltage may occur. In order to prevent these phenomena, a planarizing film may be provided on the interlayer insulating film.

Such a planarizing film can be formed using a known material, and examples thereof include inorganic materials such as silicon oxide, silicon nitride, and tantalum oxide, and organic materials such as polyimide, acrylic resin, and resist material. Examples of the method for forming the planarizing film include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method. However, the present embodiment is not limited to these materials and the forming method. Further, the planarization film may have a single layer structure or a multilayer structure.

The first electrode (pixel electrode) 11 and the second electrode (counter electrode) 15 function as a pair as an anode or a cathode of the organic EL element 19. That is, when the first electrode 11 is an anode, the second electrode 15 is a cathode, and when the first electrode 11 is a cathode, the second electrode 15 is an anode. Specific compounds and formation methods are exemplified below, but the present embodiment is not limited to these materials and formation methods.

As an electrode material for forming the first electrode 11 and the second electrode 15, a known electrode material can be used. In the case of an anode, from the viewpoint of more efficiently injecting holes into the organic EL layer, a metal such as gold (Au), platinum (Pt), nickel (Ni) having a work function of 4.5 eV or more, In addition, an oxide (ITO) composed of indium (In) and tin (Sn), an oxide (SnO ₂ ) of tin (Sn), an oxide (IZO) composed of indium (In) and zinc (Zn), and the like are transparent electrodes. As a material.

Moreover, as an electrode material for forming the cathode, lithium (Li), calcium (Ca), cerium (Ce), a work function of 4.5 eV or less from the viewpoint of more efficiently injecting electrons into the organic EL layer, Examples thereof include metals such as barium (Ba) and aluminum (Al), and alloys such as Mg: Ag alloy and Li: Al alloy containing these metals.

The first electrode 11 and the second electrode 15 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above materials. It is not limited to these formation methods. If necessary, the formed electrode can be patterned by a photolithographic fee method or a laser peeling method, or a patterned electrode can be directly formed by combining with a shadow mask. The film thickness is preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance is increased, which may increase the drive voltage.

When light emission from the organic layer 14 is extracted from the first electrode 11 side when the microcavity effect is used to improve the color purity, the light emission efficiency, the front luminance, etc. of the present embodiment, the second electrode It is preferable to use a translucent electrode as 15. In addition, when taking out light emitted from the organic layer 14 from the second electrode 15 side, it is preferable to use a translucent electrode as the first electrode 15.

As the material used here, it is possible to use a metal translucent electrode alone or a combination of a metal translucent electrode and a transparent electrode material, but as a translucent electrode material, from the viewpoint of reflectance and transmittance Silver is preferred. The film thickness of the semitransparent electrode is preferably 5 nm to 30 nm. When the film thickness is less than 5 nm, light cannot be sufficiently reflected, and interference effects cannot be obtained sufficiently. On the other hand, when the film thickness exceeds 30 nm, the light transmittance is lowered, so that the luminance and efficiency may be lowered.

In addition, as the electrode paired with the translucent electrode, it is preferable to use an electrode with high reflectivity that reflects light. Preferred electrode materials include, for example, reflective metal electrodes such as aluminum, silver, gold, aluminum-lithium alloys, aluminum-neodymium alloys, and aluminum-silicon alloys, and a combination of a transparent electrode and the reflective metal electrode (reflective electrode). An electrode etc. are mentioned.

The organic layer (organic EL layer) 14 including at least an organic light emitting layer may be a single layer structure of an organic light emitting layer or a multilayer structure of an organic light emitting layer and a charge transport layer, and specifically includes the following configurations. However, the present embodiment is not limited to these.
(1) Organic light emitting layer (2) Hole transport layer / organic light emitting layer (3) Organic light emitting layer / electron transport layer (4) Hole transport layer / organic light emitting layer / electron transport layer (5) Hole injection layer / Hole transport layer / organic light emitting layer / electron transport layer (6) hole injection layer / hole transport layer / organic light emitting layer / electron transport layer / electron injection layer (7) hole injection layer / hole transport layer / organic Light emitting layer / Hole prevention layer / Electron transport layer (8) Hole injection layer / Hole transport layer / Organic light emitting layer / Hole prevention layer / Electron transport layer / Electron injection layer (9) Hole injection layer / Hole Transport layer / electron prevention layer / organic light emitting layer / hole prevention layer / electron transport layer / electron injection layer These organic light emission layers, hole injection layer, hole transport layer, hole prevention layer, electron prevention layer, electron transport layer Each layer of the electron injection layer may have a single layer structure or a multilayer structure.

The organic light emitting layer may be composed only of the organic light emitting material exemplified below, or may be composed of a combination of a light emitting dopant and a host material, and optionally, a hole transport material, an electron transport material, and an additive An agent (donor, acceptor, etc.) or the like may be included, and these materials may be dispersed in a polymer material (binding resin) or an inorganic material.
From the viewpoint of luminous efficiency and lifetime, a material in which a luminescent dopant is dispersed in a host material is preferable.

As the organic light emitting material, a known light emitting material for an organic EL element can be used.
Such light-emitting materials are classified into low-molecular light-emitting materials, polymer light-emitting materials, and the like. Specific examples of these compounds are given below, but the present embodiment is not limited to these materials. The light-emitting material may be classified into a fluorescent material, a phosphorescent material, and the like, and it is preferable to use a phosphorescent material with high light emission efficiency from the viewpoint of reducing power consumption.

Specific compounds are exemplified below, but the present embodiment is not limited to these materials.
As the light-emitting dopant optionally contained in the light-emitting layer, a known dopant material for organic EL elements can be used. As such a dopant material, for example, as an ultraviolet light emitting material, p-quaterphenyl, 3,5,3,5 tetra-t-butylsecphenyl, 3,5,3,5 tetra-t-butyl-p -Fluorescent materials such as quinckphenyl. As blue light emitting materials, fluorescent light emitting materials such as styryl derivatives, bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic), bis (4 ′, 6′-difluoro) And phosphorescent organometallic complexes such as phenylpolydinato) tetrakis (1-pyrazolyl) borate iridium (III) (FIr6).
In the case where the phosphor layer 22 is not provided on the second substrate 21, a full color display is provided by providing an organic EL element having a red light emitting layer, an organic EL element having a green light emitting layer, and an organic EL element having a blue light emitting layer. Is possible. Examples of red light-emitting materials include tris (1-phenylisoquinolinate-C2, N) -iridium (III), tris (dibenzoylmethane) -mono- (1,10-phenanthroline) europium (III), 5 6,11,12-tetraphenylnaphthacene and the like. Examples of green luminescent materials include tris (2-phenylpyridinate-C2, N) -iridium (III), coumarin 6,5,12-dihydro-5,12 dimethylquino [2,3-b] acridine-7,14 -Dione and the like.

Also, as a host material when using a dopant, a known host material for an organic EL element can be used. Examples of such host materials include the low-molecular light-emitting materials, the polymer light-emitting materials, 4,4′-bis (carbazole) biphenyl, 9,9-di (4-dicarbazole-benzyl) fluorene (CPF), 3 , 6-bis (triphenylsilyl) carbazole (mCP), carbazole derivatives such as (PCF), aniline derivatives such as 4- (diphenylphosphoyl) -N, N-diphenylaniline (HM-A1), 1,3- And fluorene derivatives such as bis (9-phenyl-9H-fluoren-9-yl) benzene (mDPFB) and 1,4-bis (9-phenyl-9H-fluoren-9-yl) benzene (pDPFB).

The charge injection / transport layer is used to more efficiently inject charges (holes, electrons) from the electrode and transport (injection) to the light emitting layer, and the charge injection layer (hole injection layer, electron injection layer). It is classified as a transport layer (hole transport layer, electron transport layer). Each of the charge injection layer and the charge transport layer may be composed only of the charge injection / transport material exemplified below. Each of the charge injection layer and the charge transport layer may optionally contain an additive (donor, acceptor, etc.) or the like in the charge injection / transport material exemplified below. Each of the charge injection layer and the charge transport layer may have a structure in which a charge injection / transport material exemplified below is dispersed in a polymer material (binding resin) or an inorganic material.

As the charge injecting and transporting material, known charge transporting materials for organic EL elements and organic photoconductors can be used. Such charge injecting and transporting materials are classified into hole injecting and transporting materials and electron injecting and transporting materials. Specific examples of these compounds are given below, but this embodiment is not limited to these materials. .

Examples of the hole injection transport material include oxides such as vanadium oxide (V ₂ O ₅ ) and molybdenum oxide (MoO ₂ ), inorganic p-type semiconductor materials, porphyrin compounds, N, N′-bis (3-methylphenyl) ) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine (NPD) Compounds, low molecular weight materials such as hydrazone compounds, quinacridone compounds, styrylamine compounds, polyaniline (PANI), polyaniline-camphor sulfonic acid (PANI-CSA), 3,4-polyethylenedioxythiophene / polystyrene sulfonate (PEDOT / PSS) ), Poly (triphenylamine) derivatives (Poly-TPD), polyvinylcarbazole (PVCz), Examples thereof include polymer materials such as poly (p-phenylene vinylene) (PPV) and poly (p-naphthalene vinylene) (PNV).

In addition, as a material used for the hole injection layer in terms of more efficient injection and transport of holes from the anode, the highest occupied molecular orbital (HOMO) is better than the hole injection transport material used for the hole transport layer. It is preferable to use a material having a low energy level, and as the hole transport layer, it is preferable to use a material having higher hole mobility than the hole injection transport material used for the hole injection layer.

In addition, in order to further improve the hole injecting and transporting properties, it is preferable to dope the hole injecting and transporting material with an acceptor. As the acceptor, a known acceptor material for organic EL elements can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.

Acceptor materials include Au, Pt, W, Ir, POCl ₃ , AsF ₆ , Cl, Br, I, vanadium oxide (V ₂ O ₅ ), molybdenum oxide (MoO ₂ ), and other inorganic materials, TCNQ (7, 7 , 8,8, -tetracyanoquinodimethane), TCNQF ₄ (tetrafluorotetracyanoquinodimethane), TCNE (tetracyanoethylene), HCNB (hexacyanobutadiene), DDQ (dicyclodicyanobenzoquinone), etc. And compounds having a nitro group such as TNF (trinitrofluorenone) and DNF (dinitrofluorenone), and organic materials such as fluoranyl, chloranil and bromanyl.
Among these, compounds having a cyano group such as TCNQ, TCNQF ₄ , TCNE, HCNB, DDQ and the like are more preferable because they can increase the carrier concentration more effectively.

Examples of the electron injecting and transporting material include n-type semiconductor inorganic materials, oxadiazole derivatives, triazole derivatives, thiopyrazine dioxide derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, diphenoquinone derivatives, fluorenone derivatives, benzodifuran derivatives, etc. Low molecular materials; polymer materials such as poly (oxadiazole) (Poly-OXZ) and polystyrene derivatives (PSS) can be mentioned. In particular, examples of the electron injection material include fluorides such as lithium fluoride (LiF) and barium fluoride (BaF ₂ ), and oxides such as lithium oxide (Li ₂ O).

The material used for the electron injection layer is a material having an energy level of the lowest unoccupied molecular orbital (LUMO) higher than that of the electron injection and transport material used for the electron transport layer in that the electron injection and transport from the cathode are performed more efficiently. It is preferable to use a material having a higher electron mobility than the electron injecting and transporting material used for the electron injecting layer.

In addition, in order to further improve the electron injecting and transporting properties, it is preferable to dope the electron injecting and transporting material with a donor. As the donor, a known donor material for organic EL can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.

Donor materials include inorganic materials such as alkali metals, alkaline earth metals, rare earth elements, Al, Ag, Cu, In, anilines, phenylenediamines, benzidines (N, N, N ′, N′-tetraphenyl) Benzidine, N, N'-bis- (3-methylphenyl) -N, N'-bis- (phenyl) -benzidine, N, N'-di (naphthalen-1-yl) -N, N'-diphenyl- Benzidine, etc.), triphenylamines (triphenylamine, 4,4′4 ″ -tris (N, N-diphenyl-amino) -triphenylamine, 4,4′4 ″ -tris (N-3- Methylphenyl-N-phenyl-amino) -triphenylamine, 4,4′4 ″ -tris (N- (1-naphthyl) -N-phenyl-amino) -triphenylamine, etc.), triphenyldia Compounds having an aromatic tertiary amine skeleton such as amines (N, N′-di- (4-methyl-phenyl) -N, N′-diphenyl-1,4-phenylenediamine), phenanthrene, pyrene, perylene Organic materials such as condensed polycyclic compounds such as anthracene, tetracene and pentacene (however, the condensed polycyclic compound may have a substituent), TTF (tetrathiafulvalene), dibenzofuran, phenothiazine and carbazole. Among these, a compound having an aromatic tertiary amine as a skeleton, a condensed polycyclic compound, and an alkali metal are more preferable because the carrier concentration can be increased more effectively.

The organic layer 19 composed of a light emitting layer, a hole transport layer, an electron transport layer, a hole injection layer, an electron injection layer, and the like uses an organic EL layer forming coating solution in which the above materials are dissolved and dispersed in a solvent. Known coating methods such as spin coating method, dipping method, doctor blade method, discharge coating method, spray coating method, ink jet method, letterpress printing method, intaglio printing method, screen printing method, printing method such as microgravure coating method, etc. Wet process, known dry processes such as resistance heating vapor deposition, electron beam (EB) vapor deposition, molecular beam epitaxy (MBE), sputtering, organic vapor deposition (OVPD), etc., or laser transfer It can be formed by a method or the like. In addition, when forming an organic EL layer by a wet process, the coating liquid for organic layer formation may contain the additive for adjusting the physical properties of coating liquid, such as a leveling agent and a viscosity modifier.

The thickness of each organic layer is usually about 1 nm to 1000 nm, preferably 10 nm to 200 nm. If the film thickness is less than 10 nm, the properties (charge injection characteristics, transport characteristics, confinement characteristics) that are originally required may not be obtained. In addition, pixel defects due to foreign matters such as dust may occur. On the other hand, when the film thickness exceeds 200 nm, the drive voltage increases due to the resistance component of the organic layer, leading to an increase in power consumption.

In the organic EL display device 1 according to an embodiment of the present invention, an edge portion (end portion) of the first electrode 11 formed on the first substrate 10 side between the first electrode 11 and the second electrode 15. The edge cover 12 is formed for the purpose of preventing leakage between the first electrode 11 and the second electrode 15. Here, the edge cover 12 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, a resistance heating vapor deposition method or the like using an insulating material, and a known dry and wet photolithography. However, the present embodiment is not limited to these forming methods.

In addition, a known material can be used as a material constituting the insulating layer, and it is not particularly limited in this embodiment, but it is necessary to transmit light. For example, SiO, SiON, SiN, SiOC, SiC, HfSiON , ZrO, HfO, LaO and the like. The film thickness is preferably 100 nm to 2000 nm. When the film thickness is 100 nm or less, the insulation is not sufficient, and leakage occurs between the first electrode 11 and the second electrode 15, which causes an increase in power consumption and non-light emission. In addition, when the film thickness is 2000 nm or more, the film forming process takes time, resulting in deterioration of productivity and disconnection of the second electrode 15 at the edge cover 12.

Here, the organic EL element 19 has a microcavity structure (light-emitting) due to an interference effect between a reflective electrode and a translucent electrode used as the first electrode 11 and the second electrode 15 composed of an anode and a cathode, or a dielectric multilayer film. It is preferable to have a microresonator structure. Thereby, it is possible to condense the light emitted from the organic EL element 19 toward the front direction (that is, in the direction of the second substrate (sealing substrate) 21) (provide directivity). In addition, it is possible to reduce the light emission loss that escapes to the surroundings. Furthermore, it is possible to increase the light emission efficiency in the front.

This makes it possible to more efficiently propagate the light emission energy generated in the light emitting layer of the organic EL element 19 to the phosphor layer, and to increase the front luminance. Further, the emission spectrum can be adjusted due to the interference effect, and the emission spectrum can be adjusted by adjusting to a desired emission peak wavelength and half width. Therefore, it is possible to control the spectrum so that the red and green phosphors can be excited more effectively. Further, it is possible to improve the color purity of the blue pixel.

In addition, the organic EL display device according to the present embodiment is electrically connected to an external drive circuit (scanning line electrode circuit, data signal electrode circuit, power supply circuit) for driving. Here, the first substrate 10 constituting the organic EL display device is a glass substrate, more preferably a metal substrate, a plastic substrate, and more preferably a metal substrate or a substrate obtained by coating an insulating material on a plastic substrate. May be.

In addition, the organic EL display device according to this embodiment may be directly connected to an external circuit and driven. In the organic EL display device according to this embodiment, a switching circuit such as a TFT circuit is arranged in a pixel, and an external driving circuit (scanning line electrode circuit) for driving the organic EL element 19 to a wiring to which the TFT circuit or the like is connected. (Source driver), data signal electrode circuit (gate driver), power supply circuit) may be electrically connected.

The active substrate on which the organic EL elements constituting the active drive type organic EL display device are formed is on a glass substrate, more preferably on a metal substrate, on a plastic substrate, and more preferably on a metal substrate or a plastic substrate. A TFT circuit 18 is disposed on a substrate coated with an insulating material on a plurality of scanning signal lines, data signal lines, and intersections between the scanning signal lines and the data signal lines. *

The organic EL element according to the present embodiment may be driven by, for example, a voltage driven digital gradation method. Alternatively, the organic EL element according to this embodiment may be driven by a current drive analog gradation method.

The phosphor layer 22 is composed of a blue phosphor layer 22B, a red phosphor layer 22R, a green phosphor layer 22G, and the like that absorb the excitation light of the blue light emitting organic EL element and emit light in blue, green, and red, respectively. . However, for the blue phosphor layer 22G, a light scattering layer that scatters the excitation light having the directivity of the blue light emitting organic EL element and can extract it to the outside by isotropic light emission may be applied.

In addition, it is preferable to add phosphors that emit cyan and yellow to the pixels as necessary. Here, by setting the color purity of each pixel emitting light to cyan and yellow outside the triangle connected by the color purity points of red, green, and blue light emitting pixels on the chromaticity diagram, red, The color reproduction range can be further expanded as compared with a display device using pixels that emit three primary colors of green and blue.

The phosphor layer 22 may be composed of only the phosphor material exemplified below. The phosphor layer 22 may contain a phosphor material exemplified below, and optionally an additive or the like. The phosphor layer 22 may have a configuration in which a phosphor material exemplified below is dispersed in a polymer material (binding resin) or an inorganic material.
A known phosphor material can be used as the phosphor material constituting the phosphor layer 22. Such phosphor materials are classified into organic phosphor materials and inorganic phosphor materials. Specific examples of these compounds are given below, but the present embodiment is not limited to these materials. .

Organic phosphor materials include blue fluorescent dyes, stilbenzene dyes: 1,4-bis (2-methylstyryl) benzene, trans-4,4′-diphenylstilbenzene, coumarin dyes: 7-hydroxy- 4-methylcoumarin and the like can be mentioned.

Further, as a green fluorescent dye, a coumarin dye: 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1-gh) coumarin (coumarin 153), 3- ( 2'-benzothiazolyl) -7-diethylaminocoumarin (coumarin 6), 3- (2'-benzoimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 7), naphthalimide dyes: basic yellow 51, solvent yellow 11, Solvent yellow 116 etc. are mentioned.

The red fluorescent dye includes cyanine dye: 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran, pyridine dye: 1-ethyl-2- [4- ( p-dimethylaminophenyl) -1,3-butadienyl] -pyridinium-perchlorate, and rhodamine dyes: rhodamine B, rhodamine 6G, rhodamine 3B, rhodamine 101, rhodamine 110, basic violet 11, sulforhodamine 101 and the like. .

As the inorganic phosphor material, blue phosphors such as Sr ₂ P ₂ O ₇ : Sn ⁴⁺ , Sr ₄ Al ₁₄ O ₂₅ : Eu ²⁺ , BaMgAl ₁₀ O ₁₇ : Eu ²⁺ , SrGa ₂ S _{4 are used.} : Ce ³⁺ , CaGa ₂ S ₄ : Ce ³⁺ , (Ba, Sr) (Mg, Mn) Al ₁₀ O ₁₇ : Eu ²⁺ , (Sr, Ca, Ba ₂ , 0 Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu ²⁺ , BaAl ₂ SiO ₈ : Eu ²⁺ , Sr ₂ P ₂ O ₇ : Eu ²⁺ , Sr ₅ (PO ₄ ) ₃ Cl: Eu ²⁺ , (Sr, Ca, Ba) ₅ (PO _{_{^{4) 3 Cl: Eu 2+,}}} BaMg 2 Al 16 O 27: Eu 2+, (Ba, Ca) 5 (PO 4) 3 Cl: Eu 2+, Ba 3 MgSi 2 O 8: Eu 2+, Sr 3 MgSi ₂ O _8: Eu ²⁺ and the like.

Further, as the green phosphor, (BaMg) Al ₁₆ O ₂₇ : Eu ²⁺ , Mn ²⁺ , Sr ₄ Al ₁₄ O ₂₅ : Eu ²⁺ , (SrBa) Al ₁₂ Si ₂ O ₈ : Eu ²⁺ , (BaMg) ) ₂ SiO ₄ : Eu ²⁺ , Y ₂ SiO ₅ : Ce ³⁺ , Tb ³⁺ , Sr ₂ P ₂ O ₇ —Sr ₂ B ₂ O ₅ : Eu ² +, (BaCaMg) ₅ (PO ₄ ) ₃ Cl : Eu ²⁺ , Sr ₂ Si ₃ O ₈ -2SrCl ₂ : Eu ²⁺ , Zr ₂ SiO ₄ , MgAl ₁₁ O ₁₉ : Ce ³⁺ , Tb ³⁺ , Ba ₂ SiO ₄ : Eu ²⁺ , Sr ₂ SiO ₄ : Eu ²⁺ , (BaSr) SiO ₄ : Eu ^{2+ and the} like.

As red phosphors, Y ₂ O ₂ S: Eu ³⁺ , YAlO ₃ : Eu ³⁺ , Ca ₂ Y ₂ (SiO ₄ ) ₆ : Eu ³⁺ , LiY ₉ (SiO ₄ ) ₆ O ₂ : Eu ³⁺ , YVO ₄ : Eu ³⁺ , CaS: Eu ³⁺ , Gd ₂ O ₃ : Eu ³⁺ , Gd ₂ O ₂ S: Eu ³⁺ , Y (P, V) O ₄ : Eu ³⁺ , Mg ₄ GeO _5.5 F: Mn ⁴⁺ , Mg ₄ GeO ⁶ : Mn ⁴⁺ , K ₅ Eu _2.5 (WO ₄ ) _6.25 , Na ₅ Eu _2.5 (WO ₄ ) _6.25 , K ₅ Eu _2.5 (MoO ₄ ) _6.25 , Na ₅ Eu _2.5 (MoO ₄ ) _{6.25 and the} like.

The inorganic phosphor may be subjected to a surface modification treatment as necessary. Examples of the surface modification treatment include chemical treatment using a silane coupling agent, physical treatment using addition of fine particles on the order of submicrons, and combinations thereof.
In consideration of stability such as deterioration due to excitation light and deterioration due to light emission, it is preferable to use an inorganic material. Further, when an inorganic material is used, the average particle size (d ₅₀ ) is preferably 0.5 μm to 50 μm.

If the average particle size is 1 μm or less, the luminous efficiency of the phosphor is drastically reduced. In addition, when the average particle size is 50 μm or more, it becomes very difficult to form a flat film, and depletion occurs between the phosphor layer and the organic EL element (organic EL element (refractive index: About 1.7) and the inorganic phosphor layer (refractive index: about 2.3) depletion (refractive index: 1.0)) The light from the organic EL element does not efficiently reach the inorganic phosphor layer, and the phosphor The luminous efficiency of the layer is reduced.

In addition, the phosphor layer is formed by using a phosphor layer forming coating solution obtained by dissolving and dispersing the phosphor material and the resin material in a solvent, using a spin coating method, a dipping method, a doctor blade method, a discharge coating method, a spraying method. Known wet processes such as coating methods such as coating methods, ink jet methods, letterpress printing methods, intaglio printing methods, screen printing methods, printing methods such as micro gravure coating methods, etc. ) It can be formed by a known dry process such as a vapor deposition method, molecular beam epitaxy (MBE) method, sputtering method, organic vapor deposition (OVPD) method, or a laser transfer method.

The phosphor layer 22 can be patterned by a photolithography method using a photosensitive resin as a polymer resin.
Here, as the photosensitive resin, one of photosensitive resins (photo-curable resist material) having a reactive vinyl group such as acrylic acid resin, methacrylic acid resin, polyvinyl cinnamate resin, and hard rubber resin. It is possible to use one kind or a mixture of plural kinds.

Also, wet process such as ink jet method, relief printing method, intaglio printing method, screen printing method, dispenser method, resistance heating vapor deposition method using shadow mask, electron beam (EB) vapor deposition method, molecular beam epitaxy (MBE) method, It is also possible to directly pattern the phosphor material by a known dry process such as a sputtering method, an organic vapor deposition (OVPD) method, or a laser transfer method.

The thickness of the phosphor is usually about 100 nm to 100 μm, but preferably 1 μm to 100 μm. If the film thickness is less than 100 nm, it is impossible to sufficiently absorb the blue light emitted from the organic EL element 19, so that the light emission efficiency is lowered, and the color purity due to the blue transmitted light being mixed with the required color. Deterioration occurs. Further, in order to increase the absorption of light emitted from the organic EL element 19 and reduce blue transmitted light to such an extent that the color purity is not adversely affected, the film thickness is preferably 1 μm or more. Further, when the film thickness exceeds 100 μm, the blue light emission from the organic EL element is already sufficiently absorbed, so that the efficiency is not increased, but only the material is consumed and the material cost is increased.

On the other hand, when a light scattering layer is applied instead of the blue phosphor layer 22B, the light scattering particles may be made of an organic material or an inorganic material, but may be made of an inorganic material. It is preferable. This makes it possible to diffuse or scatter light having directivity from the organic EL element 19 more isotropically and effectively. Further, by using an inorganic material, it is possible to provide a light scattering layer that is stable to light and heat.

Moreover, it is preferable that the light scattering particles have high transparency. Moreover, when using it mixing with a resin material, it is preferable that the refractive index ratio with a resin material is contained in the numerical range mentioned above.

When an inorganic material is used as the light scattering particle, for example, the main component is an oxide of at least one metal selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin, and antimony. Examples thereof include particles (fine particles).

Moreover, when using particles (inorganic fine particles) made of an inorganic material as the light scattering particles, for example, silica beads (refractive index: 1.44), alumina beads (refractive index: 1.63), titanium oxide. Examples thereof include beads (refractive index: anatase type: 2.50, rutile type: 2.70), zirconia oxide beads (refractive index: 2.05), and zinc oxide beads (refractive index: 2.00).

When particles (organic fine particles) made of an organic material are used as the light scattering particles, for example, polymethyl methacrylate beads (refractive index: 1.49), acrylic beads (refractive index: 1.50), acrylic- Styrene copolymer beads (refractive index: 1.54), melamine beads (refractive index: 1.57), high refractive index melamine beads (refractive index: 1.65), polycarbonate beads (refractive index: 1.57), Styrene beads (refractive index: 1.60), crosslinked polystyrene beads (refractive index: 1.61), polyvinyl chloride beads (refractive index: 1.60), benzoguanamine-melamine formaldehyde beads (refractive index: 1.68), Examples thereof include silicone beads (refractive index: 1.50).

The resin material used by mixing with the light scattering particles described above is preferably a translucent resin. Examples of the resin material include melamine resin (refractive index: 1.57), nylon (refractive index: 1.53), polystyrene (refractive index: 1.60), melamine beads (refractive index: 1.57). , Polycarbonate (refractive index: 1.57), polyvinyl chloride (refractive index: 1.60), polyvinylidene chloride (refractive index: 1.61), polyvinyl acetate (refractive index: 1.46), polyethylene (refractive Ratio: 1.53), polymethyl methacrylate (refractive index: 1.49), poly MBS (refractive index: 1.54), medium density polyethylene (refractive index: 1.53), high density polyethylene (refractive index: 1.54), tetrafluoroethylene (refractive index: 1.35), polytrifluoroethylene chloride (refractive index: 1.42), polytetrafluoroethylene (refractive index: 1.35), and the like.

The barrier 23 surrounding the phosphor layer 22 can be formed by patterning a resin material such as a photosensitive polyimide resin, an acrylic resin, a methallyl resin, a novolac resin, or an epoxy resin by a photolithography technique or the like. Further, in order to prevent contrast leakage due to light leakage or external light, a material obtained by patterning a material containing light-shielding particles such as carbon fine particles or metal oxides in the above-described photosensitive resin material may be used. . Further, the barrier may be formed by directly patterning the non-photosensitive resin material by screen printing or the like.

In addition, the barrier 23 may be formed of a material that reflects visible light, in addition to the reflective film (optical reflector) 17 on the surface thereof. By doing so, it is possible to change the fluorescent component that escapes laterally from the phosphor layer in the external light extraction direction. Examples of such a reflective material include reflective metals such as aluminum, silver, gold, aluminum-lithium alloy, aluminum-neodymium alloy, and aluminum-silicon alloy, but high reflectivity over the entire visible light range. From the viewpoint of having aluminum, aluminum or silver is preferable. The materials listed here are merely examples, and the present embodiment is naturally not limited to these materials.

障壁 Moreover, it is preferable that the barrier 23 surrounding the side of the phosphor layer 22 is formed thicker than the phosphor layer 22. As a result, the phosphor layer 22 can be prevented from coming into contact with the organic EL element 19 and being damaged. As the shape of the barrier 23, various shapes surrounding the phosphor layer 22 such as a lattice shape and a stripe shape can be adopted.

The reflective film (optical reflector) 13 that covers the first electrode 11 and the edge cover 12 and the reflective film (optical reflector) 17 that forms the surface of the barrier 23 are, for example, aluminum, silver, gold, aluminum-lithium alloy, aluminum- Examples thereof include reflective metals such as neodymium alloy and aluminum-silicon alloy, and aluminum or silver is preferable from the viewpoint of having a high reflectance over the entire visible light region. The materials listed here are merely examples, and the present embodiment is naturally not limited to these materials. Moreover, the

reflective films

13 and 17 of this embodiment are formed by, for example, a screen printing method, a dispenser method, a resistance heating vapor deposition method, an electron beam (EB) vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, or the like. Can do. The reflective film (optical reflector) 13 and the reflective film (optical reflector) 17 are not necessarily made of the same material, and may be formed of different materials. For example, since the reflective film 13 functions as a part of the first electrode 11, the material of the reflective film 13 may be appropriately selected according to the work function of the first electrode 11.

It is also preferable to provide a color filter on the second substrate (sealing substrate) 21 at a position from the phosphor layer 22 toward the external light extraction surface (light emission surface). For example, it may be provided directly on the external light extraction surface (light emission surface) of the phosphor layer 22, or the phosphor layer 22 is formed on the second substrate 21 for sealing the organic EL element 19. If present, it can be provided between the phosphor layer 22 and the second substrate 21 or on the external light extraction surface (light emission surface) of the second substrate 21.

公知 Known color filters can be used as such color filters. By providing the color filter, the color purity of red, green, and blue pixels can be increased, and the color reproduction range of the organic EL display device can be expanded. Further, a blue color filter is formed on the blue phosphor layer 22B, a green color filter is formed on the green phosphor layer 22G, and a red color filter is formed on the red phosphor layer 22R. Thus, the excitation light that excites each phosphor is absorbed.

This makes it possible to reduce or prevent light emission of the phosphor layer due to external light, and to reduce or prevent a decrease in contrast. By forming such a color filter, it is possible to prevent the excitation light that is not absorbed and transmitted by the phosphor layer 22 from leaking to the outside, and therefore, by mixing light emitted from the phosphor layer 22 and the excitation light, It is possible to prevent a decrease in the color purity of light emission.

As the 2nd board | substrate (sealing board | substrate) 21 used by this embodiment, the thing similar to the 1st board | substrate 11 can be used, for example, an inorganic material board | substrate which consists of glass, quartz, etc., polyethylene terephthalate, polycarbazole, An insulating substrate such as a plastic substrate made of polyimide, a ceramic substrate made of alumina, or the like, or a metal substrate made of aluminum (Al), iron (Fe), or the like, or silicon oxide (SiO ₂ ), organic on the substrate Examples of the substrate include a substrate coated with an insulating material made of an insulating material or the like, and a substrate obtained by subjecting the surface of a metal substrate made of Al or the like to an insulating treatment by a method such as anodization. It is not limited.

In addition, the conventional sealing film, protective film, and adhesive layer may be used as the sealing film, protective film, and adhesive layer for bonding and sealing the first substrate 11 and the second substrate (sealing substrate) 21. This embodiment is not particularly limited. Moreover, the same layer can be used for the sealing film and the protective film. For example, the sealing film and the protective film can be formed as a sealing film by applying a resin material using a spin coating method, an ODF, or a laminating method. In addition, after forming an inorganic film such as SiO, SiON, SiN, etc. by plasma CVD, ion plating, ion beam, sputtering, etc., the resin material is further spin-coated, ODF, laminated. It can also be set as a sealing film by apply | coating or bonding.

Such a sealing film can prevent oxygen and moisture from entering the light emitting element from the outside. Moreover, when bonding the 1st board | substrate 11 and the 2nd board | substrate (sealing board | substrate) 21, it is possible to adhere | attach with a conventional ultraviolet curable resin, a thermosetting resin, etc. as an adhesive layer. Moreover, it is also possible to fill inert gas, such as nitrogen gas and argon gas, between the 1st board | substrate 11 and the 2nd board | substrate (sealing board | substrate) 21, for example. Furthermore, it is preferable to mix a hygroscopic agent such as barium oxide in the enclosed inert gas because deterioration of the organic EL element 19 due to moisture can be effectively reduced.

FIG. 10 is a schematic diagram showing a configuration example of the control portion of the organic EL display device according to one embodiment of the present invention.
The organic EL display device 1 includes a first substrate 10, a pixel portion G, a gate signal side drive circuit 51, a data signal side drive circuit 52, a wiring 53, a current supply line 54, a second substrate (sealing substrate) 21, and an FPC ( (Flexible printed circuits) 55 and an external drive circuit 56.

The external driving circuit 56 sequentially selects the scanning lines (scanning lines) of the pixel portion G by the gate signal side driving circuit 51, and the data signal side for each pixel element arranged along the selected scanning line. Pixel data is written by the drive circuit 52. That is, the gate signal side driving circuit 51 sequentially drives the scanning lines, and the data signal side driving circuit 52 outputs the pixel data to the data lines, whereby the driven scanning lines and the data lines from which the data is output intersect. The pixel element arranged at the position to be driven is driven.

The operation of the organic EL display device according to one embodiment of the present invention having the configuration described in detail above will be described.
As shown in FIG. 1, the light emitted from the phosphor layer 22 by the excitation light emitted from the organic EL element 19 is isotropically radiated from each

phosphor

22B, 22R, 22G. Of the light emitted from the phosphor layer 22, the light emitted toward the second substrate (sealing substrate) 21 side is taken out from the second substrate (sealing substrate) 21 side as it is (FIG. 1). (See the solid arrow in).

On the other hand, of the light emitted from the phosphor layer 22, the light toward the barrier 23 and the light toward the organic EL element 19 side, that is, the first substrate 10 (see the dotted arrow in FIG. 1) are on the surface of the barrier 23. The light is reflected by the formed reflective film (optical reflector) 17 and the reflective film (optical reflector) 13 that covers the first electrode 11 and the edge cover 12. As a result, light emitted toward the barrier 23 or light directed toward the first substrate 10 other than light emitted directly from the second substrate (sealing substrate) 21 side out of the light emitted from the phosphor layer 22. Are reflected by the reflective films (optical reflectors) 13 and 17 and can be taken out from the second substrate (sealing substrate) 21 side.

In addition, the excitation light emitted from the organic EL element 19 that excites the phosphor layer 22 is also directed to the first substrate 10 in addition to the excitation light directed directly from the organic EL element 19 to each

phosphor

22B, 22R, 22G. Components such as excitation light confined in the organic EL element 19 and scattered components in a direction not absorbed by the phosphor layer 22 are also reflected toward the phosphor layer 22 by the reflective film (optical reflector) 13. As a result, the amount of excitation light absorbed by the phosphor layer 22 can be increased (fluorescence quantum yield increased), and the amount of light emitted from the phosphor layer 22 itself can be increased.

As described above, excitation light is reflected toward the phosphor layer 22 by the reflective film (optical reflector) 13, and fluorescence is reflected by the reflective films (optical reflectors) 13 and 17 on the second substrate (sealing substrate) 21. By reflecting toward the side, it is possible to reduce loss of excitation light and fluorescence, increase the amount of emitted fluorescence, and reduce power consumption.

In the above-described embodiment, the reflective film (optical reflector) 13 covers the first electrode 11 and the edge cover 12, but the first electrode 11 is not a transparent electrode and has high light reflectivity. When the material is formed of a reflective metal such as aluminum, silver, gold, aluminum-lithium alloy, aluminum-neodymium alloy, aluminum-silicon alloy, etc., the first electrode 11 is also used as a reflective film to reflect The film (optical reflector) 13 may have a structure that covers only the edge cover 12.

In the above-described embodiment, the reflection film (optical reflector) 17 forms the surface of the barrier 23. The entire barrier 23 is made of a material having high light reflectivity, such as aluminum, silver, gold, aluminum-lithium. It may be formed of a reflective metal such as an alloy, an aluminum-neodymium alloy, or an aluminum-silicon alloy.

The organic EL display device 1 according to an embodiment of the present invention can be applied to, for example, a mobile phone shown in FIG. A cellular phone 60 shown in FIG. 11 includes an audio input unit 61, an audio output unit 62, an antenna 63, an operation switch 64, a display unit 65, a housing 66, and the like. The organic EL display device of this embodiment can be suitably applied as the display unit 61. By applying the organic EL display device 1 according to an embodiment of the present embodiment to the display unit 65 of the mobile phone 60, it is possible to display a high contrast image with low power consumption.

In addition, the organic EL display device 1 according to an embodiment of the present invention can be applied to, for example, a flat-screen television shown in FIG. A thin television 70 shown in FIG. 12 includes a display unit 71, speakers 72, a cabinet 73, a stand 74, and the like. The organic EL display device of this embodiment can be suitably applied as the display unit 71. By applying the organic EL display device 1 according to an embodiment of the present invention to the display unit 71 of the flat-screen television 70, it is possible to display a high-contrast image with low power consumption.

Examples of the present invention and conventional comparative examples will be described in detail below, but the present invention is not limited to these examples.
(Comparative Example 1)
2A to 2C are cross-sectional views showing a conventional organic EL display device 100 of Comparative Example 1. FIG.
A red phosphor layer 102R, a green phosphor layer 102G, a blue phosphor layer 102B and a barrier 103 are formed on a glass substrate 101 having a thickness of 0.7 mm, and the red phosphor layer 102R, the green phosphor layer 102G, The sealing substrate 101 provided with the blue phosphor layer 102B was formed. The barrier 103 surrounds the red phosphor layer 102R, the green phosphor layer 102G, and the blue phosphor layer 102B.

The barrier 103 was formed by patterning a photosensitive epoxy resin with a width of 5 μm, a film thickness of 60 μm, and a forward taper shape at a pitch of 200 μm on the sealing substrate 101.
Next, a red phosphor layer 102R, a green phosphor layer 102G, and a blue phosphor layer 102B were formed on the substrate 101. In order to form the red phosphor layer 102R, first, 15 g of ethanol and 0.22 g of γ-glycidoxypropyltriethoxysilane were added to 0.16 g of Aerosil having an average particle diameter of 5 nm, and the mixture was stirred at room temperature for 1 hour. This mixture and 20 g of red phosphor K ₅ Eu _2.5 (WO ₄ ) _6.25 were transferred to a mortar and mixed well, then heated in an oven at 70 ° C. for 2 hours and further in an oven at 120 ° C. for 2 hours to modify the surface. K ₅ Eu _2.5 (WO ₄ ) _6.25 was obtained.

Next, 30 g of polyvinyl alcohol dissolved in a mixed solution of water / dimethyl sulfoxide = 1/1 (300 g) was added to 10 g of K ₅ Eu _2.5 (WO ₄ ) _6.25 subjected to surface modification, and the mixture was stirred by a disperser. A phosphor forming coating solution was prepared. The red phosphor-forming coating solution prepared above was applied to the region surrounded by the barrier 103 by screen printing. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a red phosphor layer 102R having a thickness of 50 μm.

Next, in order to form the green phosphor layer 102G, first, 15 g of ethanol and 0.22 g of γ-glycidoxypropyltriethoxysilane were added to 0.16 g of aerosil having an average particle diameter of 5 nm and stirred for 1 hour at room temperature in an open system. did. This mixture and 20 g of green phosphor Ba ₂ SiO ₄ : Eu ²⁺ were transferred to a mortar and mixed well, and then heated in a 70 ° C. oven for 2 hours and further in a 120 ° C. oven for 2 hours to modify the surface. Ba ₂ SiO ₄ : Eu ²⁺ was obtained.

Next, 30 g of polyvinyl alcohol dissolved in a mixed solution (300 g) of water / dimethyl sulfoxide = 1/1 was added to 10 g of Ba ₂ SiO ₄ : Eu ²⁺ subjected to surface modification, and the green fluorescence stirred by a disperser was added. A body-forming coating solution was prepared. The green phosphor-forming coating solution prepared above was applied to the area surrounded by the barrier 103 by screen printing. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a green phosphor layer 102G having a thickness of 50 μm.

Next, in order to form the blue phosphor layer 102B, first, 7-hydroxy-4-methylcoumarin (coumarin 4) (0.02 mol / kg (solid content ratio)) is mixed with an epoxy thermosetting resin by a stirrer. A stirred blue phosphor-forming coating solution was prepared. The blue scattering layer forming coating solution prepared above was applied to the region surrounded by the barrier 103 by screen printing. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a blue phosphor layer 9B having a thickness of 50 μm.

On the other hand, on the glass substrate 105 with a thickness of 0.7 mm, a silver film is formed by sputtering to have a film thickness of 100 nm, and an indium-tin oxide (ITO) film is formed thereon by a sputtering method so as to have a film thickness of 20 nm. Then, the first electrode 106 was formed. Thereafter, the first electrode 106 was patterned into stripes with a width of 160 μm and a pitch of 200 μm by a conventional photolithography method.

Next, SiO ₂ was laminated on the first electrode 106 with a film thickness of 200 nm by a sputtering method, and a patterned edge cover 107 was formed by a conventional photolithography method so as to cover only the edge portion of the first electrode 106. . Here, the short side is covered with SiO ₂ by 10 μm from the end of the first electrode 106. This was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 120 ° C. for 1 hour.

Next, this substrate 105 was fixed to a substrate holder in a resistance heating evaporation apparatus, and the pressure was reduced to a vacuum of 1 × 10 ⁻⁴ Pa or less, and an organic layer 108 including an organic light emitting layer was formed by a resistance heating evaporation method.
In order to form the organic layer 108, first, a hole injection layer having a thickness of 100 nm is formed by resistance heating vapor deposition using 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) as a hole injection material. did. Next, N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPD) is used as a hole transport material. A hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.

Next, a blue organic light emitting layer (thickness: 30 nm) is formed on the hole transport layer. This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium ( III) (FIrpic) (blue phosphorescent light emitting dopant) was prepared by co-evaporation at a deposition rate of 1.5 Å / sec and 0.2 Å / sec.

A hole blocking layer (thickness: 10 nm) was formed on the blue organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). Next, an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq ₃ ). Next, an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).

After this, a translucent electrode was formed as the second electrode 109. First, the substrate 105 was fixed in a metal deposition chamber. Next, a shadow mask for forming the second electrode 109 (a mask having an opening so that the second electrode 109 can be formed in a stripe shape having a width of 500 μm and a pitch of 600 μm in a direction opposite to the stripe of the first electrode 106) And the substrate 105 are aligned, and magnesium and silver are co-deposited in a desired pattern on the surface of the electron injection layer by vapor deposition at a rate of 0.1 Å / sec and 0.9 Å / sec respectively. (Thickness: 1 nm).

Furthermore, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance in the second electrode 109. did. Thereby, the second electrode 109 was formed. Here, as an organic EL element, a microcavity effect (interference effect) appears between the reflective electrode (first electrode) 106 and the semi-transmissive electrode (second electrode) 109, and the front luminance can be increased. Thus, it is possible to more efficiently propagate light emission energy from the organic EL element to the phosphor layer 102. Similarly, the emission peak is adjusted to 460 nm and the half-value width is adjusted to 50 nm by the microcavity effect.

Next, an inorganic protective layer made of SiO _{2 having} a thickness of 3 μm was formed by patterning from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions by a plasma CVD method (not shown).

The organic EL element side substrate 105 (see FIG. 2A) and the phosphor layer side substrate 101 (see FIG. 2B) produced as described above are aligned by the alignment marker formed outside the display unit. Went. The sealing substrate 101 on which the phosphor layer is formed in advance is coated with a thermosetting resin. The two substrates are brought into close contact with each other through the thermosetting resin and cured by heating at 80 ° C. for 2 hours. It was. The bonding step was performed in a dry air environment (water content: −80 ° C.) for the purpose of preventing deterioration of the organic EL element due to water.
Finally, an organic EL display device was formed by connecting terminals formed in the periphery to an external power source (see FIG. 2C).

Example 1
3A to 3C are cross-sectional views showing the organic EL display device 110 according to the first embodiment of the present invention.
A red phosphor layer 112R, a green phosphor layer 112G, a blue phosphor layer 112B and a barrier 113 are formed on a glass substrate 111 having a thickness of 0.7 mm, and the red phosphor layer 112R, the green phosphor layer 112G, The sealing substrate 111 provided with the blue phosphor layer 112B was formed. The barrier 113 surrounds the red phosphor layer 112R, the green phosphor layer 112G, and the blue phosphor layer 112B.

First, on the substrate 111, a photosensitive epoxy resin having a width of 5 μm, a film thickness of 60 μm, and a pattern with a forward taper shape at a pitch of 200 μm was formed, and the barrier 113 was produced.
Next, aluminum was formed to a thickness of 500 nm as the reflective film 401 by an EB vapor deposition method on the surface of the barrier 113 that was not in contact with the substrate 111.

Next, a red phosphor layer 112R, a green phosphor layer 112G, and a blue phosphor layer 112B were formed on the substrate 111.
In order to form the red phosphor layer 112R, first, 15 g of ethanol and 0.22 g of γ-glycidoxypropyltriethoxysilane were added to 0.16 g of Aerosil having an average particle diameter of 5 nm, and the mixture was stirred at room temperature for 1 hour. This mixture and 20 g of red phosphor K ₅ Eu _2.5 (WO ₄ ) _6.25 were transferred to a mortar, mixed well, and then heated in an oven at 70 ° C. for 2 hours and further in an oven at 120 ° C. for 2 hours to modify the surface. K ₅ Eu _2.5 (WO ₄ ) _6.25 was obtained.

Next, 30 g of polyvinyl alcohol dissolved in a mixed solution of water / dimethyl sulfoxide = 1/1 (300 g) was added to 10 g of K ₅ Eu _2.5 (WO ₄ ) _6.25 subjected to surface modification, and the mixture was stirred by a disperser. A phosphor forming coating solution was prepared. The red phosphor-forming coating solution prepared above was applied to the area surrounded by the barrier 113 by screen printing. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a red phosphor layer 112R having a thickness of 50 μm.

Next, in order to form the green phosphor layer 112G, first, 15 g of ethanol and 0.22 g of γ-glycidoxypropyltriethoxysilane were added to 0.16 g of aerosil having an average particle diameter of 5 nm, and the mixture was stirred for 1 hour at an open system room temperature. did. This mixture and 20 g of green phosphor Ba ₂ SiO ₄ : Eu ²⁺ were transferred to a mortar and mixed well, and then heated in a 70 ° C. oven for 2 hours and further in a 120 ° C. oven for 2 hours to modify the surface. Ba ₂ SiO ₄ : Eu ²⁺ was obtained.

Next, 30 g of polyvinyl alcohol dissolved in a mixed solution (300 g) of water / dimethyl sulfoxide = 1/1 was added to 10 g of Ba ₂ SiO ₄ : Eu ²⁺ subjected to surface modification, and the green fluorescence stirred by a disperser was added. A body-forming coating solution was prepared. The green phosphor-forming coating solution prepared above was applied to the area surrounded by the barrier 113 by screen printing. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a green phosphor layer 112G having a thickness of 50 μm.

Next, in order to form the blue phosphor layer 112B, first, 7-hydroxy-4-methylcoumarin (coumarin 4) (0.02 mol / kg (solid content ratio)) is mixed with an epoxy thermosetting resin and stirred with a stirrer. A blue phosphor-forming coating solution was prepared. The blue scattering layer forming coating solution prepared above was applied to the area surrounded by the barrier 8 by screen printing. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg conditions) for 4 hours to form a blue phosphor layer 112B having a thickness of 50 μm.

On the other hand, a film of silver is formed on a glass substrate 115 having a thickness of 0.7 mm so as to have a film thickness of 100 nm by sputtering, and indium-tin oxide (ITO) is formed thereon so as to have a thickness of 20 nm. A first electrode 116 was formed by sputtering.
Thereafter, the first electrode 116 was patterned into stripes with a width of 160 μm and a pitch of 200 μm by a conventional photolithography method.

Next, SiO ₂ was laminated on the first electrode 116 with a film thickness of 200 nm by sputtering, and a patterned edge cover 117 was formed by conventional photolithography so as to cover only the edge portion of the first electrode 116. . Here, the short side is covered with SiO ₂ by 10 μm from the end of the first electrode 116. This was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 120 ° C. for 1 hour.

Next, silver was laminated to a thickness of 100 nm by resistance heating vapor deposition so as to cover the first electrode 116 and part of the edge cover 117. Here, the reflective film 402 is formed by covering the edge cover 117 with silver by 5 μm from both ends.

Next, the substrate 115 was fixed to a substrate holder in a resistance heating evaporation apparatus, and the pressure was reduced to a vacuum of 1 × 10 ⁻⁴ Pa or less, and an organic layer 118 including an organic light emitting layer was formed by a resistance heating evaporation method.
First, as a hole injection material, 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used, and a hole injection layer having a thickness of 100 nm was formed by resistance heating vapor deposition.
Next, N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPD) is used as a hole transport material. A hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.

Next, a blue organic light emitting layer (thickness: 30 nm) was formed on the hole transport layer. This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium ( III) (FIrpic) (blue phosphorescent light emitting dopant) was prepared by co-evaporation at a deposition rate of 1.5 Å / sec and 0.2 Å / sec.

Next, a hole blocking layer (thickness: 10 nm) was formed on the blue organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
Next, an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq ₃ ).
Next, an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).

After this, a translucent electrode was formed as the second electrode 119. First, the substrate 115 was fixed to a metal deposition chamber. Next, a shadow mask for forming the second electrode 119 (a mask having an opening so that the second electrode 119 can be formed in a stripe shape having a width of 500 μm and a pitch of 600 μm in a direction opposite to the stripe of the first electrode 116. ) And the substrate 115, and magnesium and silver are co-deposited on the surface of the electron injection layer by a vacuum deposition method at a deposition rate of 0.1 Å / sec and 0.9 Å / sec respectively in a desired pattern. Formation (thickness: 1 nm). Furthermore, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode 119. To do. Thereby, the second electrode 119 is formed.

Here, as an organic EL element, a microcavity effect (interference effect) appears between the reflective electrode (first electrode) 116 and the semi-transmissive electrode (second electrode) 119, and it is possible to increase the front luminance. Light emission energy from the EL element can be more efficiently propagated to the phosphor layer. Similarly, the emission peak is adjusted to 460 nm and the half-value width is adjusted to 50 nm by the microcavity effect.

Next, an inorganic protective layer made of SiO _{2 having} a thickness of 3 μm is patterned by plasma CVD from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions (not shown). As described above, the substrate 115 including the organic EL element is manufactured.

The organic EL element side substrate 115 (see FIG. 3A) and the phosphor layer side substrate 111 (see FIG. 3B) manufactured as described above are aligned by the alignment marker formed outside the display unit. Went. In addition, the thermosetting resin was previously apply | coated to the fluorescent substance sealing board | substrate, both board | substrates were sealed through thermosetting resin, and it hardened | cured by heating at 80 degreeC for 2 hours. The bonding step was performed in a dry air environment (water content: −80 ° C.) for the purpose of preventing deterioration of the organic EL element due to water.
Finally, the organic EL display device 110 was completed by connecting terminals formed in the periphery to an external power source (see FIG. 3C).

Here, a red phosphor layer 112R, a green phosphor layer 112G, and a blue phosphor layer 112B are used as an excitation light source capable of arbitrarily switching the blue light emitting organic EL by applying a desired current to a desired stripe electrode by an external power source. The blue light was converted into red, green, and blue, respectively, and isotropic light emission of red, green, and blue was obtained, and a full-color display with lower power consumption and higher luminance than Comparative Example 1 could be obtained.

(Comparative Example 2)
FIG. 4 is a cross-sectional view showing a conventional organic EL display device 120 of Comparative Example 2.
After producing the substrate 121 provided with the phosphor layer 122 in the same manner as in Comparative Example 1, an acrylic resin was spin coated to minimize the surface height imbalance of the substrate 121, and the entire surface of the substrate 121 was formed by spin coating. The planarization layer 501 was formed by heating at 120 ° C. for 30 minutes.

Next, an indium-tin oxide (ITO) film was formed on the planarizing layer 501 by a sputtering method so as to have a thickness of 200 nm, whereby the first electrode 126 was formed. Thereafter, the first electrode 126 is patterned into stripes with a width of 160 μm and a pitch of 200 μm by a conventional photolithography method.

Next, SiO ₂ was laminated to a thickness of 200 nm on the first electrode 126 by sputtering, and a patterned edge cover 127 was formed by conventional photolithography so as to cover only the edge portion of the first electrode 126. . Here, the short side is covered with SiO ₂ by 10 μm from the end of the first electrode 126. This was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 120 ° C. for 1 hour.

Next, the substrate 121 was fixed to a substrate holder in a resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum of 1 × 10 ⁻⁴ Pa or less, and an organic layer 128 including an organic light emitting layer was formed by a resistance heating vapor deposition method.
First, as a hole injection material, 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used, and a hole injection layer having a thickness of 25 nm was formed by resistance heating vapor deposition.
Next, N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPD) is used as a hole transport material. A 30 nm thick hole transport layer was formed by resistance heating vapor deposition.

Next, a hole blocking layer (thickness: 10 nm) was formed on the light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
Next, an electron transport layer (thickness: 20 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq ₃ ).
Next, an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).

After this, a reflective electrode was formed as the second electrode 129. First, the substrate 121 was fixed to a metal deposition chamber. Next, a shadow mask for forming the second electrode 129 (a mask having an opening so that the second electrode 129 can be formed in a stripe shape having a width of 500 μm and a pitch of 600 μm in a direction opposite to the stripe of the first electrode 126. ) And the substrate 121 were aligned, and aluminum was formed in a desired pattern (thickness: 100 m) on the surface of the electron injection layer by a vacuum deposition method at a deposition rate of 1 kg / sec.

The substrate 121 and the sealing substrate 125 produced as described above are sealed through a thermosetting resin previously applied to the sealing substrate 125 side, and cured by heating at 80 ° C. for 2 hours. went. The above bonding step was performed in a dry air environment (water content: −80 ° C.) for the purpose of preventing deterioration of the organic EL element due to moisture.
Finally, the organic EL display device 120 was completed by connecting terminals formed in the periphery to an external power source.

(Example 2)
FIG. 5 is a cross-sectional view showing an organic EL display device 130 of Example 2 of the present invention.
After producing the substrate 131 having the phosphor layer 132 in the same manner as in Example 1, acrylic resin was spin-coated with an acrylic resin to a thickness of 20 μm to minimize imbalance in the surface height of the substrate 131. The planarization layer 502 was formed by forming the entire surface and heating at 120 ° C. for 30 minutes.

Next, an indium-tin oxide (ITO) film was formed on the planarizing layer 502 by a sputtering method so as to have a thickness of 200 nm, whereby a first electrode 136 was formed. Thereafter, the first electrode 136 was patterned into stripes with a width of 160 μm and a pitch of 200 μm by a conventional photolithography method.

Next, SiO ₂ was laminated to a thickness of 200 nm on the first electrode 136 by sputtering, and a patterned edge cover 137 was formed by conventional photolithography so as to cover only the edge portion of the first electrode 136. . Here, a short side of 10 μm from the end of the first electrode 136 is covered with SiO ₂ . This was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 120 ° C. for 1 hour.

Next, silver was laminated with a film thickness of 100 nm by resistance heating vapor deposition so as to cover a part of the edge cover 137. Here, the reflective film 403 is formed by covering the edge cover 137 with silver by 5 μm from both ends.

Next, the substrate 131 was fixed to a substrate holder in a resistance heating evaporation apparatus, and the pressure was reduced to a vacuum of 1 × 10 ⁻⁴ Pa or less, and an organic layer 138 including an organic light emitting layer was formed by a resistance heating evaporation method.
First, as a hole injection material, 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used, and a hole injection layer having a thickness of 25 nm was formed by resistance heating vapor deposition.
Next, N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPD) is used as a hole transport material. A 30 nm thick hole transport layer was formed by resistance heating vapor deposition.

Thereafter, a reflective electrode was formed as the second electrode 139. First, the substrate 131 was fixed to a metal deposition chamber. Next, a shadow mask for forming the second electrode 139 (a mask having an opening so that the second electrode 139 can be formed in a stripe shape having a width of 500 μm and a pitch of 600 μm in a direction opposite to the stripe of the first electrode 136) And the substrate 131 were aligned, and aluminum was formed in a desired pattern (thickness: 100 m) on the surface of the electron injection layer by a vacuum deposition method at a deposition rate of 1 kg / sec.

The substrate 131 and the sealing substrate 135 manufactured as described above are sealed with a thermosetting resin previously applied to the sealing substrate 135 side, and cured by heating at 80 ° C. for 2 hours. went. The above bonding step was performed in a dry air environment (water content: −80 ° C.) for the purpose of preventing deterioration of the organic EL element due to moisture.
Finally, the organic EL display device 130 was completed by connecting terminals formed in the periphery to an external power source.

Here, a blue light emitting organic EL is used as an excitation light source that can be arbitrarily switched by applying a desired current to a desired striped electrode from an external power source, and a red phosphor layer 132R, a green phosphor layer 132G, and a blue phosphor layer. In 132B, light emission was converted from blue light to red, green, and blue, respectively, and isotropic light emission of red, green, and blue was obtained, and a full color display with lower power consumption and higher luminance than Comparative Example 2 could be obtained. .

(Example 3)
6A to 6C are cross-sectional views showing an organic EL display device 140 according to Embodiment 3 of the present invention.
As in Example 1, an organic EL element including a sealing substrate 141 on which a phosphor layer 142 was formed, a first electrode 146, an organic layer 148 including an organic light emitting layer, a second electrode 149, and a reflective film 406 was formed. A substrate 145 was produced.

Thereafter, the organic EL layer deposited on the upper surface of the edge cover 147 of the substrate 145 on which the organic EL element is formed, the second electrode 149, and the inorganic protective layer (not shown) by a width of 15 μm based on the center of the edge cover 147, It was removed by reactive ion etching.

The organic EL element side substrate 145 (see FIG. 6A) and the phosphor layer side substrate 141 (see FIG. 6B) manufactured as described above are sealed with an alignment marker formed outside the display portion. The reflective film 405 formed on the surface of the barrier 143 of the stop substrate 141 is directly on the edge cover 147 having a width of 15 μm from which the organic layer 148, the second electrode 149, and the inorganic protective layer (not shown) are removed by the ashing. Alignment was performed. In addition, the thermosetting resin was apply | coated to the sealing substrate 141 in advance, both board | substrates were sealed through the thermosetting resin, and it hardened | cured by heating at 80 degreeC for 2 hours. The bonding step was performed in a dry air environment (water content: −80 ° C.) for the purpose of preventing deterioration of the organic EL element due to water.
Finally, the organic EL display device 140 was completed by connecting terminals formed in the periphery to an external power source (see FIG. 6C).

Here, by applying a desired current to a desired striped electrode from an external power source, the blue light-emitting organic EL is used as an excitation light source that can be arbitrarily switched, and the red phosphor layer 142R, the green phosphor layer 142G, and the blue phosphor layer 142B. The light emitted from the blue light is converted into red, green, and blue, respectively, and isotropic light emission of red, green, and blue can be obtained. Thus, a full color display with lower power consumption and higher luminance than that of Example 1 can be obtained. .

In Example 3, the organic layer 148, the second electrode 149, and the inorganic protective layer (not shown) deposited on the upper surface of the edge cover were removed by the reactive ion etching method. Is not limited to this. The organic layer 148, the second electrode 149, and the inorganic protective layer (not shown) deposited on the upper surface of the edge cover are subjected to a reactive gas etching method, a reactive ion beam etching method, an ion beam etching method, and a reactive laser beam etching. It may be removed by another dry etching method such as a method, or may be removed by a wet etching method.

In any of the methods described above, it is necessary to perform the treatment before attaching the substrate on which the organic layer is formed and the substrate on which the phosphor layer is formed. In the step of bonding the substrate on which the body layer is formed, a barrier provided on the substrate on which the phosphor layer is formed, and the organic layer deposited on the upper surface of the edge cover provided on the substrate on which the organic layer is formed, and the second The organic layer deposited on the upper surface of the edge cover, the second electrode, and the inorganic protective layer can be removed by applying pressure so as to penetrate the electrode and the inorganic protective layer.

At this time, it is preferable that the pressurization is small so that the substrate on which the organic layer is formed by pressurization and the substrate on which the phosphor layer is formed are not damaged. For example, the shape of the barrier is a spindle shape or a strong taper shape. However, one embodiment of the present invention is not limited to this, and the pressure may be reduced by another shape, or the pressure may be reduced by a method other than the shape.

As a modification of the above-described third embodiment, for example, as shown in FIG. 7, bonding may be performed so that a part of the barrier 143 a enters the inside of the edge cover 147 a. By bonding the substrate 141 and the substrate 145 with such a structure, it is possible to reduce the fluorescence component / excitation light component that propagates through the edge cover 147a and enters the adjacent pixels, and further reduces power consumption.

Further, as another modification example of the above-described third embodiment, for example, as illustrated in FIG. 8, the barrier 143 b and the substrate 145 may be bonded to each other via the edge cover 147 b.
By bonding the substrate 141 and the substrate 145 with such a structure, the fluorescence component and the excitation light component that propagate through the edge cover 147b and enter the adjacent pixels can be reduced to the utmost limit. It is possible to reduce power consumption.

Example 4
9A to 9C are cross-sectional views showing an organic EL display device 150 of Example 4 of the present invention.
A red phosphor layer 152R, a green phosphor layer 152G, a blue phosphor layer 152B, and a barrier 153 are formed on a 0.7 mm glass substrate 151. The red phosphor layer 152R, the green phosphor layer 152G, and the blue phosphor A sealing substrate 151 having a body layer 152B was formed. The barrier 153 surrounds the red phosphor layer 152R, the green phosphor layer 152G, and the blue phosphor layer 152B.

First, on the substrate 151, a silver paste was patterned in a forward taper shape with a width of 5 μm, a film thickness of 60 μm, and a pitch of 200 μm by a screen printing method, whereby a barrier 153 was manufactured.
Next, a red phosphor layer 152R, a green phosphor layer 152G, and a blue phosphor layer 152B were formed on the substrate 151 in the same manner as in Example 1 to produce a sealing substrate 151.

Next, similarly to Example 1, a substrate 155 on which an organic EL element including the first electrode 156, the organic layer 158 including the organic light emitting layer, the second electrode 159, and the reflective film 407 was formed.
The organic EL element side substrate 155 (see FIG. 9A) and the phosphor layer side substrate 151 (see FIG. 9B) manufactured as described above are aligned by the alignment marker formed outside the display unit. Went. In addition, the thermosetting resin is applied to the sealing substrate 151 on which the phosphor layer is formed in advance. The both substrates are tightly sealed through the thermosetting resin and cured by heating at 80 ° C. for 2 hours. Went. The above bonding step was performed in a dry air environment (water content: −80 ° C.) for the purpose of preventing deterioration of the organic EL element due to moisture.
Finally, the organic EL display device 150 was completed by connecting terminals formed in the periphery to an external power source (see FIG. 9C).
Here, a red phosphor layer 152R, a green phosphor layer 152G, and a blue phosphor layer 152B are used as an excitation light source capable of arbitrarily switching the blue light-emitting organic EL by applying a desired current to a desired stripe electrode by an external power source. The blue light was converted into red, green, and blue, respectively, and isotropic light emission of red, green, and blue was obtained, and a full color display with lower power consumption and higher brightness than that of Example 1 could be obtained.
In addition, you may use together the technique of Example 3 mentioned above in such Example 4. FIG. In this way, the power consumption can be further reduced by a synergistic effect. Needless to say, the modifications of the third embodiment (FIGS. 7 and 8) can be used together.

(Comparative Example 3)
13A to 13B are cross-sectional views showing a conventional organic EL display device 160 of Comparative Example 3. FIG.

A silver film is formed on a 0.7 mm thick glass substrate 165 by sputtering to have a film thickness of 100 nm, and an indium-tin oxide (ITO) film is formed thereon by sputtering to a film thickness of 20 nm. A first electrode 166 was formed. Thereafter, the first electrode 166 was patterned into stripes with a width of 160 μm and a pitch of 200 μm by a conventional photolithography method.

Next, SiO ₂ was laminated on the first electrode 166 to a thickness of 200 nm by sputtering, and a patterned edge cover 167 was formed by conventional photolithography so as to cover only the edge portion of the first electrode 166. . Here, the short side is covered with SiO ₂ by 10 μm from the end of the first electrode 166. This was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 120 ° C. for 1 hour.

Next, the substrate 165 was fixed to a substrate holder in a resistance heating evaporation apparatus, and the pressure was reduced to a vacuum of 1 × 10 ⁻⁴ Pa or less, and an organic layer 168 including an organic light emitting layer was formed by resistance heating evaporation.
In order to form the organic layer 168, first, 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) is used as a hole injecting material by resistance heating vapor deposition to form a film on the red light emitting organic EL element portion. A hole injection layer having a thickness of 50 nm, a green light emitting organic EL element portion having a thickness of 150 nm, and a blue light emitting organic EL element portion having a thickness of 100 nm was formed. Next, N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPD) is used as a hole transport material. A hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.

Next, a red organic light-emitting layer (thickness: 30 nm) was formed on the hole transport layer of the red light-emitting organic EL element part by a mask coating method using a shadow mask. This red organic light emitting layer comprises 3-phenyl-4 (1′-naphthyl) -5-phenyl-1,2,4-triazole (TAZ) (host material) and bis (2- (2′-benzo [4 , 5-α] thienyl) pyridinate-N, C3 ′) iridium (acetylacetonate) (btp2Ir (acac)) (red phosphorescent dopant) with a deposition rate of 1.4 Å / sec and 0.15 Å / sec, respectively. And produced by co-evaporation.
Next, a green organic light emitting layer (thickness: 30 nm) was formed on the hole transport layer of the green light emitting organic EL element part by a mask coating method using a shadow mask. The green organic light-emitting layer comprises TAZ (host material) and tris (2-phenylpyridine) iridium (III) (Ir (ppy) ₃ ) (green phosphorescent dopant) with a deposition rate of 1.5 Å / second, It was made by co-evaporation at 0.2 liter / second.
Next, a blue organic light-emitting layer (thickness: 30 nm) was formed on the hole transport layer of the blue light-emitting organic EL element part by a mask coating method using a shadow mask. This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium ( III) (FIrpic) (blue phosphorescent light emitting dopant) was prepared by co-evaporation at a deposition rate of 1.5 Å / sec and 0.2 Å / sec.

Next, a hole blocking layer (thickness: 10 nm) using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) on the red organic light emitting layer, the green organic light emitting layer, and the blue organic light emitting layer. ) Was formed. Next, an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq ₃ ). Next, an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).

Thereafter, a semitransparent electrode was formed as the second electrode 169. First, the substrate 165 was fixed to a metal deposition chamber. Next, a shadow mask for forming the second electrode 169 (a mask having an opening so that the second electrode 169 can be formed in a stripe shape having a width of 500 μm and a pitch of 600 μm in a direction opposite to the stripe of the first electrode 166) And the substrate 165 are aligned, and magnesium and silver are co-deposited on the surface of the electron injection layer by a vacuum deposition method at a deposition rate of 0.1 Å / sec and 0.9 Å / sec, respectively, in a desired pattern. (Thickness: 1 nm).

Furthermore, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode 169. did. Thereby, the second electrode 169 was formed. Here, as an organic EL element, a microcavity effect (interference effect) appears between the reflective electrode (first electrode) 166 and the semi-transmissive electrode (second electrode) 169, and the front luminance can be increased. Thus, the light emission energy from the organic EL element can be extracted to the outside more efficiently. Similarly, the emission peak is adjusted to 460 nm and the half-value width is adjusted to 50 nm by the microcavity effect.

The organic EL element side substrate 165 (see FIG. 13A) and the substrate 161 manufactured as described above were aligned with an alignment marker formed outside the display portion. In addition, the thermosetting resin is applied to the sealing substrate 161 on which the phosphor layer is formed in advance. The both substrates are brought into close contact with each other through the thermosetting resin and cured by heating at 80 ° C. for 2 hours. It was. The bonding step was performed in a dry air environment (water content: −80 ° C.) for the purpose of preventing deterioration of the organic EL element due to water.
Finally, an organic EL display device was formed by connecting terminals formed in the periphery to an external power source (see FIG. 13B).

(Example 5)
14A to 14B are sectional views showing an organic EL display device 170 of Example 5 of the present invention.

A silver film is formed on a glass substrate 175 having a thickness of 0.7 mm by sputtering to have a film thickness of 100 nm, and an indium-tin oxide (ITO) film is formed thereon by sputtering to a thickness of 20 nm. To form a first electrode 176.
Thereafter, the first electrode 176 was patterned into stripes with a width of 160 μm and a pitch of 200 μm by a conventional photolithography method.

Next, SiO ₂ was laminated on the first electrode 176 to a thickness of 200 nm by sputtering, and a patterned edge cover 117 was formed by conventional photolithography so as to cover only the edge portion of the first electrode 176. . Here, a structure in which the short side of the first electrode 176 from the end by 10 μm is covered with SiO ₂ is employed. This was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 120 ° C. for 1 hour.

Next, silver was laminated with a film thickness of 100 nm by resistance heating vapor deposition so as to cover the first electrode 176 and part of the edge cover 177. Here, the reflective film 408 is formed by covering the edge cover 177 with silver by 5 μm from both ends.

Next, this substrate 175 was fixed to a substrate holder in a resistance heating evaporation apparatus, and the pressure was reduced to a vacuum of 1 × 10 ⁻⁴ Pa or less, and an organic layer 178 including an organic light emitting layer was formed by resistance heating evaporation.
In order to form the organic layer 178, first, 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) is used as a hole injecting material, and a film is formed on the red light emitting organic EL element portion by resistance heating vapor deposition. A hole injection layer having a thickness of 50 nm, a green light emitting organic EL element portion having a thickness of 150 nm, and a blue light emitting organic EL element portion having a thickness of 100 nm was formed.
Next, N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPD) is used as a hole transport material. A hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.

After this, a translucent electrode was formed as the second electrode 179. First, the substrate 175 was fixed to a metal deposition chamber. Next, a shadow mask for forming the second electrode 179 (a mask having an opening so that the second electrode 179 can be formed in a stripe shape having a width of 500 μm and a pitch of 600 μm in a direction opposite to the stripe of the first electrode 176. ) And the substrate 175, and the surface of the electron injection layer is co-deposited with magnesium and silver at a deposition rate of 0.1 Å / sec and 0.9 Å / sec, respectively, by a vacuum evaporation method to form magnesium silver in a desired pattern. Formation (thickness: 1 nm). Furthermore, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode 179. To do. Thereby, the second electrode 179 is formed.

Here, as the organic EL element, a microcavity effect (interference effect) appears between the reflective electrode (first electrode) 176 and the semi-transmissive electrode (second electrode) 179, and the front luminance can be increased. Light emission energy from the EL element can be extracted to the outside more efficiently. Similarly, the emission peak is adjusted to 460 nm and the half-value width is adjusted to 50 nm by the microcavity effect.

Next, an inorganic protective layer made of SiO _{2 having} a thickness of 3 μm is patterned by plasma CVD from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions (not shown). Thus, the substrate 175 provided with the organic EL element is manufactured.

The organic EL element side substrate 115 (see FIG. 14A) and the substrate 171 manufactured as described above were aligned with an alignment marker formed outside the display portion. In addition, the thermosetting resin was apply | coated to the board | substrate 171 in advance, both board | substrates were sealed through the thermosetting resin, and it hardened | cured by heating at 80 degreeC for 2 hours. The bonding step was performed in a dry air environment (water content: −80 ° C.) for the purpose of preventing deterioration of the organic EL element due to water.
Finally, the organic EL display device 110 was completed by connecting terminals formed in the periphery to an external power source (see FIG. 14B).

Here, by applying a desired current to a desired striped electrode from an external power source, red, green, and blue light emission can be obtained from the red organic EL element, the green organic EL element, and the blue organic EL element, respectively. A full color display with lower power consumption and higher luminance than in Example 3 could be obtained.

A highly efficient (high luminance) organic EL display device and a manufacturing method thereof can be provided.

DESCRIPTION OF SYMBOLS 1 ... Organic EL display apparatus, 10 ... 1st board | substrate (board | substrate), 11 ... 1st electrode, 12 ... Edge cover part, 13 ... Reflective film (optical reflector), 14 ... Organic layer (organic EL layer), 15 ... Second electrode (counter electrode), 17 ... reflective film (optical reflector), 19 ... organic EL element, 21 ... second substrate (sealing substrate), 22 ... phosphor layer, 23 ... barrier.

Claims

A substrate,
An organic EL device having a first electrode formed on the substrate, an edge cover covering an end of the first electrode, an organic layer including an organic light emitting layer, and a second electrode;
A phosphor layer that is excited by the excitation light generated in the organic EL element and emits light;
A barrier surrounding the sides of the phosphor layer;
A first optical reflector covering a part of the edge cover;
An organic EL display device comprising a second optical reflector covering the barrier.
The organic EL display device according to claim 1, wherein the first optical reflector is formed to further cover the first electrode.
2. The organic EL display device according to claim 1, wherein the tip of the barrier is in close contact with the edge cover.
The organic EL display device according to claim 1, wherein the first and second optical reflectors have a reflectance of 80% or more with respect to visible light.
The organic EL display device according to claim 1, wherein the first and second optical reflectors contain aluminum or silver.
2. The organic EL display device according to claim 1, wherein at least one of the edge cover and the barrier has a tapered portion formed in a tapered shape.
2. The organic EL display device according to claim 1, wherein a height of the barrier is larger than a thickness of the phosphor layer.
The organic EL display device according to claim 1, wherein the phosphor layer contains an inorganic phosphor.
The organic EL display device according to claim 1, further comprising an active element that drives the organic EL element.
The first optical reflector is a first reflective film that covers a part of the edge cover,
The organic EL display device according to claim 1, wherein the second optical reflector is a second reflective film that covers the barrier.
A substrate,
An organic EL device having a first electrode formed on the substrate, an edge cover covering an end of the first electrode, an organic layer including an organic light emitting layer, and a second electrode;
A phosphor layer that is excited by the excitation light generated in the organic EL element and emits light;
A barrier that surrounds the sides of the phosphor layer and is formed of a first reflector;
An organic EL display device including a second optical reflector that covers a part of the surface of the edge cover.
A substrate,
An organic EL device having a first electrode formed on the substrate, an edge cover covering an end of the first electrode, an organic layer including an organic light emitting layer, and a second electrode;
Comprising an optical reflector on the side of the edge cover;
The optical reflector is an organic EL display device in contact with the organic layer and provided between an edge cover and the organic layer.
The organic EL display device according to claim 12, wherein the optical reflector is formed so as to further cover the first electrode.
The organic EL display device according to claim 12, wherein the optical reflector has a reflectance with respect to visible light of 80% or more.
The organic EL display device according to claim 12, wherein the optical reflector contains aluminum or silver.
The organic EL display device according to claim 12, wherein the edge cover has a tapered portion formed in a tapered shape.
The organic EL display device according to claim 12, further comprising an active element that drives the organic EL element.
13. The organic EL display device according to claim 12, wherein the optical reflector is a reflective film that covers a side surface of the edge cover.
A substrate,
An organic EL device comprising a first electrode formed on one side of the substrate, an edge cover covering an edge portion of the first electrode, an organic layer including an organic light emitting layer, and a second electrode;
A phosphor layer that is excited by the excitation light generated in the organic EL element and emits light;
A barrier surrounding the phosphor layer;
A method of manufacturing an organic EL display device comprising an optical reflector on a part of the surface of the edge cover and a part of the surface of the barrier,
An organic EL display device manufacturing method comprising a step of forming the phosphor layer by a screen printing method, an ink jet method, or a nozzle coating method.