WO2011148463A1 - ドープ元素量を制御された析出物質の製造方法 - Google Patents
ドープ元素量を制御された析出物質の製造方法 Download PDFInfo
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- WO2011148463A1 WO2011148463A1 PCT/JP2010/058828 JP2010058828W WO2011148463A1 WO 2011148463 A1 WO2011148463 A1 WO 2011148463A1 JP 2010058828 W JP2010058828 W JP 2010058828W WO 2011148463 A1 WO2011148463 A1 WO 2011148463A1
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D11/00—Solvent extraction
- B01D11/04—Solvent extraction of solutions which are liquid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D9/00—Crystallisation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/18—Stationary reactors having moving elements inside
- B01J19/1887—Stationary reactors having moving elements inside forming a thin film
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
- C01F5/14—Magnesium hydroxide
- C01F5/22—Magnesium hydroxide from magnesium compounds with alkali hydroxides or alkaline- earth oxides or hydroxides
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/003—Preparation involving a liquid-liquid extraction, an adsorption or an ion-exchange
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/02—Compounds of alkaline earth metals or magnesium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Definitions
- the present invention relates to a method for precipitating a substance to be deposited with a controlled amount of doping element.
- Metal compounds such as metal oxides, metal salts, and organometallic compounds are used in a wide range of fields.
- their fine particles are used in a wide range of products such as abrasives, catalysts, cosmetics, electronic devices, magnetic materials, pigments / coating agents, and semiconductors. It is a material used for
- the target characteristics and stability can be improved by doping a metal compound with different elements. Furthermore, since the properties of these metal compounds can be improved by making them into nanoparticles, a method for producing metal compound nanoparticles having a uniform particle diameter with a uniform amount of doping elements is eagerly desired. ing.
- a method for producing a metal oxide with a controlled doping element amount includes a water-soluble metal salt for forming a metal oxide as described in Patent Document 1, and a valence electron of the metal oxide.
- a method comprising a step of firing a deposited precipitate, or a step of contacting metal oxide particles with a solution containing a doping element as described in Patent Document 2, and a contact with the solution containing the doping element And a step of firing the metal oxide particles formed.
- the metal oxide that has become coarse particles is often pulverized by mechanical abrasion or mechanical pulverization using an apparatus such as a ball mill or a bead mill as described in Patent Document 3, and such a method is used.
- an apparatus such as a ball mill or a bead mill as described in Patent Document 3, and such a method is used.
- the metal oxide particles produced in step 1 are difficult to produce as uniform nanoparticles, and when the doped metal oxide is pulverized, it is difficult to obtain particles with a uniform amount of doped elements. was there. Furthermore, since a strong crushing force is applied to the particles (crystals), there is a problem that expected characteristics such as semiconductor characteristics, transparency, spectral characteristics, and durability are not exhibited.
- JP 2010-17649 A Special table 2007-52597 gazette JP 2009-74080 A International Publication WO / 2009/020188 Pamphlet (Semiconductor Application)
- the present invention solves the above-described problems, and an object of the present invention is to provide a method for producing a precipitate, particularly a metal compound, in which the amount of the doped element is controlled.
- the present inventor has made a fluid containing a raw material solution in which a substance to be precipitated is dissolved between the processing surfaces that are arranged opposite to each other and can be separated from each other, and for depositing the substance to be precipitated.
- a fluid containing a deposition solvent and a fluid containing a third solvent added as needed are mixed as a fluid to be treated to precipitate a substance to be deposited, a doping element or a compound containing the doping element is added. Dissolving in at least one of the solvent of the raw material solution, the solvent for precipitation, and the third solvent, and controlling the solubility of the dope element or the compound containing the dope element in the solvent for precipitation.
- the present inventors have found that a precipitate having a controlled amount of doping element can be obtained, and the present invention has been completed.
- the invention according to claim 1 of the present application uses at least two kinds of fluids as the fluid to be treated, and at least one of the fluids is a raw material solution in which a substance to be precipitated is dissolved in a solvent.
- At least one kind of fluid other than the above is at least one kind of precipitation solvent for precipitating the substance to be deposited, and at least one kind of dope element or dope element-containing substance is a solvent of the raw material solution, It is dissolved in at least one of the solvent for precipitation and at least one other solvent other than the raw material solution and the solvent for precipitation.
- the solubility of the doping element or the doping element-containing substance in the precipitation solvent is controlled.
- the fluid to be treated is disposed so as to be opposed to each other, and at least one is relative to the other.
- the deposition method is characterized in that the material to be deposited is controlled by mixing in a thin film fluid formed between at least two processing surfaces that rotate in the same manner, and the amount of the doping element is controlled.
- the substance to be deposited is at least one kind of metal or metal compound
- the solvent for precipitation is a solvent for precipitation for precipitating the at least one kind of metal or metal compound.
- either one of the fluid containing the raw material solution and the fluid containing the deposition solvent passes between the processing surfaces while forming the thin film fluid,
- Either one of the fluid containing the raw material solution and the fluid containing the precipitation solvent is introduced between the processing surfaces through the opening, and the fluid containing the raw material solution and the precipitation solvent are added.
- the invention according to claim 4 of the present application uses at least three kinds of fluids of the first, second, and third as the fluid to be treated, and the first fluid is a fluid containing the raw material solution,
- the second fluid is a dope element-containing substance solution in which the at least one dope element or the dope element-containing substance is dissolved in a solvent
- the third fluid is a fluid containing the precipitation solvent
- the 3 At least a separate introduction path independent from the flow path through which any one of the kinds of fluids passes between the two processing surfaces while forming the thin film fluid and the flow of any one of the fluids is provided.
- the at least two separate introduction paths are independent from each other, and at least one of the at least two processing surfaces has an opening that leads to each of the at least two separate introduction paths.
- Preparation The remaining two kinds of fluids among the three kinds of fluids are introduced between the processing surfaces through the separate openings, and the three kinds of fluids are mixed in the thin film fluid.
- the deposition method according to claim 1 is provided
- the invention according to claim 5 of the present application provides the deposition method according to claim 4, wherein the first fluid and the third fluid are solutions not containing a doping element or a doping element-containing substance. .
- the precipitation solvent is a mixed solvent of a plurality of types of solvents, and at least one of the mixed solvents includes the deposition material and the doping element or doping element.
- a solvent capable of dissolving the contained material, and at least one other solvent among the mixed solvents is capable of dissolving the deposited material, and the solubility of the dope element or the dope element-containing material is mixed.
- Dope element which is smaller than said 1 type of solvent in a solvent, and is contained in said to-be-deposited substance by controlling the mixing ratio of said 1 type of solvent in said mixed solvent, and said 1 type of other solvent The deposition method according to claim 1, wherein the amount is controlled.
- the invention according to claim 7 of the present application provides the deposition method according to claim 1, wherein the amount of the doping element contained in the substance to be deposited is controlled by controlling the temperature of the fluid to be treated. To do.
- the substance to be precipitated that does not substantially contain the dope element is precipitated.
- the precipitation method according to claim 1, wherein the solubility set to be higher is higher than the solubility in the case of depositing a substance to be deposited substantially containing the doping element.
- the production of nanoparticles such as metal compounds with controlled amount of doping element can be performed more easily, at lower energy and at a lower cost. Therefore, it is possible to provide a nano-sized precipitate controlled at a low cost and stably.
- the particle diameter can be easily controlled, various nanoparticles such as a metal compound in which the amount of the doping element according to the purpose is controlled can be provided.
- At least one type of doping element or doping element-containing substance is a solvent for the raw material solution, a solvent for the precipitation, , A nano-sized metal compound that does not contain a doping element even under the condition that it is dissolved in at least one solvent other than the raw material solution and the precipitation solvent, and at least one other solvent It was possible to provide a precipitate such as a low-cost and stably.
- FIG. 1 is a schematic cross-sectional view of a fluid processing apparatus according to an embodiment of the present invention.
- A is a schematic plan view of a first processing surface of the fluid processing apparatus shown in FIG. 1, and
- B is an enlarged view of a main part of the processing surface of the apparatus.
- A) is sectional drawing of the 2nd introduction path of the apparatus,
- B) is the principal part enlarged view of the processing surface for demonstrating the 2nd introduction path.
- It is a TEM photograph of the zinc oxide nanoparticle produced in the Example of this invention. It is a graph which shows the XRD measurement result of the zinc oxide nanoparticle produced in the Example of this invention.
- Examples of the material to be deposited in the present invention include metals, non-metals, and compounds thereof. Although it does not specifically limit as a metal, The simple substance or alloy of all the elements on a chemical periodic table can be mentioned. For example, metal elements such as Ti, Fe, W, Pt, Au, Cu, Ag, Pd, Ni, Mn, Co, Ru, V, Zn, and Zr may be used. Further, non-metallic elements such as B, Si, Ge, N, and C may be used. Although it does not specifically limit as a compound in this invention, If an example is given, the metal or nonmetallic salt mentioned above, an oxide, nitride, carbide, a complex, an organic salt, an organic complex, an organic compound etc. will be mentioned. .
- the metal salt or non-metal salt is not particularly limited, but metal or non-metal nitrate or nitrite, sulfate or sulfite, formate or acetate, phosphate or phosphite, hypophosphite And chloride, oxy salt and acetylacetonate salt.
- the metal oxide or non-metal oxide in the present invention is not particularly limited.
- a metal oxide or non-metal oxide of the formula M x O y a metal hydroxide of M p (OH) q or Non-metallic hydroxides, metal hydroxides or non-metal hydroxides of the formula M r (OH) s O t , metal acids or non-metal acids, their various solvated forms, and these as the main components
- a certain composition in the formula, x, y, p, q, r, s, and t are each an arbitrary integer).
- the metal oxide or non-metal oxide of the formula M x O y is not particularly limited, but examples include TiO 2 , SnO, SnO 2 , Al 2 O 3 , SiO 2 , ZnO, CoO, Co 3 O 4 , Cu 2 O, CuO, Ni 2 O 3 , NiO, MgO, Y 2 O 3 , VO, VO 2 , V 2 O 3 , V 2 O 5 , MnO, MnO 2 , CdO, ZrO 2 , PdO, PdO 2, MoO 3, MoO 2, Cr 2 O 3, CrO 3, etc. In 2 O 3 or RuO 2 and the like.
- the metal hydroxide or non-metal hydroxide of the formula M p (OH) q is not particularly limited, but examples include Sn (OH) 2 , Sn (OH) 4 , Al (OH) 3. , Si (OH) 4 , Zn (OH) 2 , Co (OH) 2 , Co (OH) 3 , CuOH, Cu (OH) 2 , Ni (OH) 3 , Ni (OH) 2 , Mg (OH) 2 , Y (OH) 3 , V (OH) 2 , V (OH) 4 , V (OH) 3 , Mn (OH) 2 , Mn (OH) 4 , Cd (OH) 2 , Zr (OH) 4 , Pd (OH) 2 , Pd (OH) 4 , Mo (OH) 4 , Cr (OH) 3 , Ru (OH) 4 and the like.
- the metal hydroxide oxide or nonmetal hydroxide oxide of the formula M r (OH) s O t is not particularly limited, and
- the metal nitride in the present invention is not particularly limited, for example, boron nitride (BN), carbon nitride (C 3 N 4 ), silicon nitride (Si 3 N 4 ), gallium nitride (GaN), nitride Indium (InN), aluminum nitride (AlN), chromium nitride (Cr 2 N), copper nitride (Cu 3 N), iron nitride (Fe 4 N), iron nitride (Fe 3 N), lanthanum nitride (LaN), nitride Lithium (Li 3 N), magnesium nitride (Mg 3 N 2 ), molybdenum nitride (Mo 2 N), niobium nitride (NbN), tantalum nitride (TaN), titanium nitride (TiN), tungsten nitride (W 2 N), Examples include tungs
- the metal carbide is not particularly limited.
- Metals, non-metals, or compounds thereof as mentioned above can be used as the material to be deposited or the doping element-containing material in the present invention.
- the raw material solution in the present invention at least one kind of deposition substance, or at least one kind of deposition substance and at least one kind of doping element or doping element-containing substance are dissolved (or molecularly dispersed.
- dissolution simply referred to as dissolution.
- the solution is not particularly limited as long as it is a solution. It is possible to carry out the present invention by dissolving these substances to be deposited in a solvent.
- the doping element in the present invention is not particularly limited, but is a metal element such as Na, Mg, Mn, Cu, Ag, Pt, Pd, B, Pb, Fe, Al, Nb, V, Sb, In, and Ga.
- a metal element such as Na, Mg, Mn, Cu, Ag, Pt, Pd, B, Pb, Fe, Al, Nb, V, Sb, In, and Ga.
- non-metallic elements such as B, Si, Ge, N, C, P, and F may be used, and all elements on the chemical periodic table can be listed. It can be implemented by selecting one or more depending on the desired characteristics.
- the present invention can be carried out by dissolving a dope element or a dope element-containing substance in the solvent of the raw material solution or in at least one other solvent other than the raw material solution and the precipitation solvent.
- the dope element or the dope element-containing substance is a solvent other than the raw material solution, the precipitation solvent, the raw material solution, and the other solvent other than the precipitation solvent.
- Examples of the solvent for dissolving the substance to be deposited and the dope element or the dope element-containing substance include water, an organic solvent, and a mixed solvent composed of a plurality of them.
- Examples of the water include tap water, ion-exchanged water, pure water, ultrapure water, and RO water.
- Examples of the organic solvent include alcohol compound solvents, amide compound solvents, ketone compound solvents, ether compound solvents, and aromatic compounds. Examples include solvents, carbon disulfide, aliphatic compound solvents, nitrile compound solvents, sulfoxide compound solvents, halogen compound solvents, ester compound solvents, ionic liquids, carboxylic acid compounds, and sulfonic acid compounds. Each of the above solvents may be used alone or in combination of two or more.
- Basic substances include metal hydroxides such as sodium hydroxide and potassium hydroxide, metal alkoxides such as sodium methoxide and sodium isopropoxide, and amine compounds such as triethylamine, 2-diethylaminoethanol and diethylamine. Can be mentioned.
- acidic substances include inorganic acids such as aqua regia, hydrochloric acid, nitric acid, fuming nitric acid, sulfuric acid, and fuming sulfuric acid, and organic acids such as formic acid, acetic acid, chloroacetic acid, dichloroacetic acid, oxalic acid, trifluoroacetic acid, and trichloroacetic acid. It is done.
- These basic substances or acidic substances can be carried out by mixing with various solvents as described above, or can be used alone.
- an oxidizing agent or a reducing agent in the above solvent.
- an oxidizing agent Nitrate, hypochlorite, permanganate, and a peroxide are mentioned.
- the reducing agent include lithium aluminum hydride, sodium borohydride, hydrazine and hydrazine hydrate, and sulfite.
- the alcohol compound solvent examples include linear alcohols such as methanol, ethanol, n-butanol and n-propanol, isopropanol, 2-butanol, tert-butanol, and 1-methoxy-2-propanol. And branched alcohols such as polyhydric alcohols such as ethylene glycol and diethylene glycol.
- the ketone compound solvent examples include acetone, methyl ethyl ketone, and cyclohexanone.
- the ether compound solvent examples include dimethyl ether, diethyl ether, tetrahydrofuran, propylene glycol monomethyl ether, and the like.
- Examples of the aromatic compound solvent include nitrobenzene, chlorobenzene, and dichlorobenzene.
- Examples of the aliphatic compound solvent include hexane.
- Examples of the nitrile compound solvent include acetonitrile.
- Examples of the sulfoxide compound solvent include dimethyl sulfoxide, diethyl sulfoxide, hexamethylene sulfoxide, sulfolane and the like.
- Examples of the halogen compound solvent include chloroform, dichloromethane, trichloroethylene, iodoform, and the like.
- ester compound solvent examples include ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, 2- (1-methoxy) propyl acetate and the like.
- ionic liquid examples include a salt of 1-butyl-3-methylimidazolium and PF6- (hexafluorophosphate ion).
- Examples of the amide compound solvent include N, N-dimethylformamide, 1-methyl-2-pyrrolidone, 2-pyrrolidinone, 1,3-dimethyl-2-imidazolidinone, 2-pyrrolidinone, ⁇ -caprolactam, formamide, N -Methylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N-methylpropanamide, hexamethylphosphoric triamide and the like.
- Examples of the carboxylic acid compound include 2,2-dichloropropionic acid and squaric acid.
- Examples of the sulfonic acid compound include methanesulfonic acid, p-toluenesulfonic acid, chlorosulfonic acid, trifluoromethanesulfonic acid, and the like.
- the same solvent as described above can be used as the precipitation solvent for precipitating the material to be deposited whose amount of the doping element is controlled by mixing with the raw material solution.
- a solvent for dissolution and a solvent for precipitation can be selected depending on the target substance to be deposited.
- the precipitation solvent as a mixed solvent and to control the mixing ratio.
- the amount of the dope element of the substance to be deposited obtained by controlling the solubility of the substance to be deposited and the doping element or the doping element-containing substance in the precipitation solvent.
- it describes about sodium dope zinc oxide as an example.
- a raw material solution prepared by dissolving zinc oxide powder in an aqueous sodium hydroxide solution (deposited material: zinc oxide, dope element-containing material: sodium hydroxide) is prepared, and methanol or a mixed solvent of methanol and toluene is used as a solvent for precipitation. Adjust.
- the deposited zinc oxide is doped with sodium, and sodium-doped zinc oxide is obtained. Furthermore, by changing the mixing ratio of methanol and toluene (sodium hydroxide is less soluble than methanol. Sodium hydroxide is insoluble in toluene), the concentration of sodium in zinc oxide (doping element amount) can be easily achieved. Can be controlled. Moreover, since this invention is a control method of the amount of doped elements, it includes the case where the amount of doped elements in the to-be-deposited substance is 0%.
- the mixing of the raw material solution and the solvent for precipitation can be performed between processing surfaces that are disposed to face each other so as to be able to approach and leave, and at least one of which rotates relative to the other. It is preferable to use a method of stirring and mixing uniformly in a thin film fluid.
- a device for example, a device having the same principle as that described in Patent Document 4 by the applicant of the present application can be used.
- nanoparticles such as metal compounds in which the amount of doping element is controlled uniformly and uniformly.
- the fluid processing apparatus shown in FIGS. 1 to 3 is the same as the apparatus described in Patent Document 4, and between the processing surfaces in the processing unit in which at least one of which can be approached and separated rotates relative to the other.
- the first fluid containing the workpiece is introduced between the processing surfaces, and an opening communicating between the processing surfaces is provided independently of the flow path into which the fluid is introduced.
- a device for introducing a second fluid containing an object to be processed from another flow path provided between the processing surfaces and mixing and stirring the first fluid and the second fluid between the processing surfaces.
- U indicates the upper side
- S indicates the lower side.
- the upper, lower, front, rear, left and right only indicate a relative positional relationship, and do not specify an absolute position.
- 2A and 3B, R indicates the direction of rotation.
- C indicates the centrifugal force direction (radial direction).
- This apparatus uses at least two kinds of fluids, of which at least one kind of fluid contains at least one kind of object to be processed, and is disposed so as to be able to approach and separate from each other, and at least One is provided with a processing surface that rotates with respect to the other, and the above-mentioned fluids are merged between these processing surfaces to form a thin film fluid, and the object to be processed is processed in the thin film fluid. It is a device to do.
- This fluid processing apparatus includes first and second processing units 10 and 20 that face each other, and at least one of the processing units rotates.
- the opposing surfaces of both processing parts 10 and 20 are processing surfaces.
- the first processing unit 10 includes a first processing surface 1
- the second processing unit 20 includes a second processing surface 2.
- Both the processing surfaces 1 and 2 are connected to the flow path of the fluid to be processed and constitute a part of the flow path of the fluid to be processed.
- the distance between the processing surfaces 1 and 2 can be changed as appropriate, but is usually adjusted to 1 mm or less, for example, a minute distance of about 0.1 ⁇ m to 50 ⁇ m.
- the fluid to be processed that passes between the processing surfaces 1 and 2 becomes a forced thin film fluid forced by the processing surfaces 1 and 2.
- This apparatus can process a single fluid to be processed, but can also process a plurality of fluids to be processed.
- the apparatus When processing a plurality of fluids to be processed, the apparatus is connected to the flow path of the first fluid to be processed, forms a part of the flow path of the first fluid to be processed, A part of the flow path of the second fluid to be treated is formed separately from the treatment fluid.
- this apparatus performs processing of fluid, such as making both flow paths merge and mixing both the to-be-processed fluids between the processing surfaces 1 and 2, and making it react.
- “treatment” is not limited to a form in which the object to be treated reacts, but also includes a form in which only mixing and dispersion are performed without any reaction.
- first holder 11 that holds the first processing part 10
- second holder 21 that holds the second processing part 20
- a contact surface pressure applying mechanism a rotation driving part
- a first introduction part d1, a second introduction part d2, and a fluid pressure imparting mechanism p are provided.
- the first processing portion 10 is an annular body, more specifically, a ring-shaped disk.
- the second processing unit 20 is also an annular ring disk.
- the materials of the first and second processing parts 10 and 20 are metals, ceramics, sintered metals, wear-resistant steels, other metals subjected to hardening treatment, hard materials lining, coating, plating, etc. Can be used.
- at least a part of the first and second processing surfaces 1 and 2 facing each other is mirror-polished in the processing units 10 and 20.
- the surface roughness of this mirror polishing is not particularly limited, but is preferably Ra 0.01 to 1.0 ⁇ m, more preferably Ra 0.03 to 0.3 ⁇ m.
- At least one of the holders can be rotated relative to the other holder by a rotary drive unit (not shown) such as an electric motor.
- Reference numeral 50 in FIG. 1 denotes a rotation shaft of the rotation drive unit.
- the first holder 11 attached to the rotation shaft 50 rotates and is used for the first processing supported by the first holder 11.
- the unit 10 rotates with respect to the second processing unit 20.
- the second processing unit 20 may be rotated, or both may be rotated.
- the first and second holders 11 and 21 are fixed, and the first and second processing parts 10 and 20 are rotated with respect to the first and second holders 11 and 21. May be.
- At least one of the first processing unit 10 and the second processing unit 20 can be approached / separated from at least either one, and both processing surfaces 1 and 2 can be approached / separated. .
- the second processing unit 20 approaches and separates from the first processing unit 10, and the second processing unit 20 is disposed in the storage unit 41 provided in the second holder 21. It is housed in a hauntable manner.
- the first processing unit 10 may approach or separate from the second processing unit 20, and both the processing units 10 and 20 may approach or separate from each other. It may be a thing.
- the accommodating portion 41 is a recess that mainly accommodates a portion of the second processing portion 20 on the side opposite to the processing surface 2 side, and is a groove that has a circular shape, that is, is formed in an annular shape in plan view. .
- the accommodating portion 41 accommodates the second processing portion 20 with a sufficient clearance that allows the second processing portion 20 to rotate.
- the second processing unit 20 may be arranged so that only the parallel movement is possible in the axial direction, but by increasing the clearance, the second processing unit 20 is
- the center line of the processing part 20 may be tilted and displaced so as to break the relationship parallel to the axial direction of the storage part 41. Furthermore, the center line of the second processing part 20 and the storage part 41 may be displaced.
- the center line may be displaced so as to deviate in the radial direction. As described above, it is desirable to hold the second processing unit 20 by the floating mechanism that holds the three-dimensionally displaceably.
- the fluid to be treated includes a first introduction part d1 serving as a flow path through which a fluid flows in a state where pressure is applied by a fluid pressure application mechanism p configured by various pumps, potential energy, and the like, and a second introduction. It is introduced between the processing surfaces 1 and 2 from the part d2.
- the first introduction part d1 is a passage provided in the center of the annular second holder 21, and one end of the first introduction part d1 is formed on both processing surfaces from the inside of the annular processing parts 10, 20. It is introduced between 1 and 2.
- the second introduction part d2 supplies the first processed fluid and the second processed fluid to be reacted to the processing surfaces 1 and 2.
- the second introduction part d ⁇ b> 2 is a fluid passage provided inside the second processing part 20, and one end thereof opens at the second processing surface 2.
- the first fluid to be processed that has been pressurized by the fluid pressure imparting mechanism p is introduced from the first introduction part d1 into the space inside the processing parts 10 and 20, and the first processing surface 1 and the second processing surface 2 are supplied. It passes between the processing surfaces 2 and tries to pass outside the processing portions 10 and 20. Between these processing surfaces 1 and 2, the second fluid to be treated is supplied from the second introduction part d2 and merged with the first fluid to be treated, mixed, stirred, emulsified, dispersed, reacted, crystallized.
- the above-mentioned contact surface pressure applying mechanism applies a force that acts in a direction in which the first processing surface 1 and the second processing surface 2 approach each other to the processing portion.
- the contact pressure applying mechanism is provided in the second holder 21 and biases the second processing portion 20 toward the first processing portion 10.
- the contact surface pressure applying mechanism presses the first processing surface 1 of the first processing unit 10 and the second processing surface 2 of the second processing unit 20 in the approaching direction.
- a thin film fluid having a minute film thickness of nm unit to ⁇ m unit is generated by the balance between the surface pressure and the force for separating the processing surfaces 1 and 2 such as fluid pressure. In other words, the distance between the processing surfaces 1 and 2 is kept at a predetermined minute distance by the balance of the forces.
- the contact surface pressure applying mechanism is arranged between the accommodating portion 41 and the second processing portion 20.
- a spring 43 that biases the second processing portion 20 in a direction approaching the first processing portion 10 and a biasing fluid introduction portion 44 such as air or oil
- the contact surface pressure is applied depending on the fluid pressure. Any one of the spring 43 and the fluid pressure may be applied, and other force such as magnetic force or gravity may be used.
- the second processing unit 20 causes the first treatment by the separation force generated by the pressure or viscosity of the fluid to be treated which is pressurized by the fluid pressure imparting mechanism p against the bias of the contact surface pressure imparting mechanism. A small distance is provided between the processing surfaces 1 and 2 away from the working portion 10.
- the first processing surface 1 and the second processing surface 2 are set with an accuracy of ⁇ m by the balance between the contact surface pressure and the separation force, and the minute distance between the processing surfaces 1 and 2 is set. Is set.
- the separation force includes the fluid pressure and viscosity of the fluid to be processed, the centrifugal force due to the rotation of the processing part, the negative pressure when the urging fluid introduction part 44 is negatively applied, and the spring 43 is pulled.
- the force of the spring when it is used as a spring can be mentioned.
- This contact surface pressure imparting mechanism may be provided not in the second processing unit 20 but in the first processing unit 10 or in both.
- the second processing unit 20 has the second processing surface 2 and the inside of the second processing surface 2 (that is, the first processing surface 1 and the second processing surface 2).
- a separation adjusting surface 23 is provided adjacent to the second processing surface 2 and located on the inlet side of the fluid to be processed to the processing surface 2.
- the separation adjusting surface 23 is implemented as an inclined surface, but may be a horizontal surface.
- the pressure of the fluid to be processed acts on the separation adjusting surface 23 to generate a force in a direction in which the second processing unit 20 is separated from the first processing unit 10. Accordingly, the pressure receiving surfaces for generating the separation force are the second processing surface 2 and the separation adjusting surface 23.
- the proximity adjustment surface 24 is formed on the second processing portion 20.
- the proximity adjustment surface 24 is a surface opposite to the separation adjustment surface 23 in the axial direction (upper surface in FIG. 1), and the pressure of the fluid to be processed acts on the second processing portion 20. A force in a direction to approach the first processing unit 10 is generated.
- the fluid pressure acting on the second processing surface 2 and the separation adjusting surface 23 is understood as a force constituting the opening force in the mechanical seal.
- the projected area A1 of the adjustment surface for proximity 24 projected onto a virtual plane orthogonal to the approaching / separating direction of the processing surface, that is, the protruding and protruding direction of the second processing unit 20 (the axial direction in FIG. 1), and the virtual The area ratio A1 / A2 of the total area A2 of the projected areas of the second processing surface 2 and the separation adjusting surface 23 of the second processing unit 20 projected onto the plane is called the balance ratio K, and the above opening It is important for force adjustment.
- the opening force can be adjusted by the pressure of the fluid to be processed, that is, the fluid pressure, by changing the balance line, that is, the area A1 of the adjustment surface 24 for proximity.
- P1 represents the pressure of the fluid to be treated, that is, the fluid pressure
- K represents the balance ratio
- k represents the opening force coefficient
- Ps represents the spring and back pressure
- the proximity adjustment surface 24 may be implemented with a larger area than the separation adjustment surface 23.
- the fluid to be processed becomes a thin film fluid forced by the two processing surfaces 1 and 2 holding the minute gaps, and tends to move to the outside of the annular processing surfaces 1 and 2.
- the mixed fluid to be processed does not move linearly from the inside to the outside of the two processing surfaces 1 and 2, but instead has an annular radius.
- a combined vector of the movement vector in the direction and the movement vector in the circumferential direction acts on the fluid to be processed and moves in a substantially spiral shape from the inside to the outside.
- the rotating shaft 50 is not limited to what was arrange
- At least one of the first and second processing parts 10 and 20 may be cooled or heated to adjust the temperature.
- the first and second processing parts 10 and 10 are adjusted.
- 20 shows an example in which temperature control mechanisms (temperature control mechanisms) J1 and J2 are provided. Further, the temperature of the introduced fluid to be treated may be adjusted by cooling or heating. These temperatures can also be used for particle precipitation, and can be set to generate Benard convection or Marangoni convection in the fluid to be treated between the first and second processing surfaces 10, 20. Good.
- a groove-like recess 13 extending from the center side of the first processing portion 10 to the outside, that is, in the radial direction is formed on the first processing surface 1 of the first processing portion 10. May be implemented.
- the planar shape of the recess 13 is curved or spirally extending on the first processing surface 1, or is not shown, but extends straight outward, L It may be bent or curved into a letter shape or the like, continuous, intermittent, or branched.
- the recess 13 can be implemented as one formed on the second processing surface 2, and can also be implemented as one formed on both the first and second processing surfaces 1, 2.
- the base end of the recess 13 reaches the inner periphery of the first processing unit 10.
- the tip of the recess 13 extends toward the outer peripheral surface of the first processing surface 1, and the depth (cross-sectional area) gradually decreases from the base end toward the tip.
- a flat surface 16 without the recess 13 is provided between the tip of the recess 13 and the peripheral surface of the first processing surface 1.
- the opening d20 of the second introduction part d2 is provided in the second processing surface 2, it is preferably provided at a position facing the flat surface 16 of the facing first processing surface 1.
- the opening d20 is desirably provided on the downstream side (outside in this example) from the concave portion 13 of the first processing surface 1.
- the flow direction when introduced by the micropump effect is opposed to the flat surface 16 on the outer diameter side from the point that is converted into a laminar flow direction in a spiral shape formed between the processing surfaces 1 and 2. It is desirable to install in the position.
- the distance n in the radial direction from the outermost position of the recess 13 provided in the first processing surface 1 is preferably about 0.5 mm or more.
- the second introduction portion d2 can have directionality, and as shown in FIG. 3A, the introduction direction from the opening d20 of the second processing surface 2 is the second processing surface 2. Is inclined at a predetermined elevation angle ( ⁇ 1).
- the elevation angle ( ⁇ 1) is set to be more than 0 degrees and less than 90 degrees, and in the case of a reaction with a higher reaction rate, it is preferably set at 1 to 45 degrees.
- the introduction direction from the opening d ⁇ b> 20 of the second processing surface 2 has directionality in the plane along the second processing surface 2.
- the introduction direction of the second fluid is a component in the radial direction of the processing surface that is an outward direction away from the center and a component with respect to the rotation direction of the fluid between the rotating processing surfaces. Is forward.
- a line segment in the radial direction passing through the opening d20 and extending outward is defined as a reference line g and has a predetermined angle ( ⁇ 2) from the reference line g to the rotation direction R. This angle ( ⁇ 2) is also preferably set to more than 0 degree and less than 90 degrees.
- This angle ( ⁇ 2) can be changed according to various conditions such as the type of fluid, the reaction speed, the viscosity, the rotational speed of the processing surface, and the direction of the second introduction part d2 is completely different. You can not have it.
- the number of fluids to be treated and the number of flow paths are two, but may be one, or may be three or more.
- the second fluid is introduced between the processing surfaces 1 and 2 from the second introduction part d2, but this introduction part may be provided in the first processing part 10 or may be provided in both. Good.
- the shape, size, and number of the opening for introduction provided in each processing portion are not particularly limited, and can be appropriately changed. Further, an opening of the introduction portion may be provided immediately before or between the first and second processing surfaces 1 and 2 and further upstream.
- the amount of the doping element is controlled by mixing a solvent for precipitation as a second fluid with a solution containing at least one kind of deposited substance and at least one kind of doping element or a raw material solution dissolving the doping element-containing substance as the second fluid. Nanoparticles such as metallic compounds are deposited.
- the apparatus includes a solution containing a raw material solution in which at least one kind of deposition substance and at least one kind of doping element or doping element-containing substance are dissolved as the first fluid, and a deposition solvent as the second fluid.
- nanoparticles such as a metal compound having a controlled doping element amount may be deposited.
- the dope element or the dope element-containing substance may be dissolved in the above-mentioned precipitation solvent, or may be dissolved and mixed in both the raw material solution and the precipitation solution.
- the precipitation reaction of the fine particles is performed while forcibly and uniformly mixing between the processing surfaces 1 and 2 which are disposed so as to be able to approach and separate from each other in the apparatus shown in FIG. Occur.
- the raw material solution is directly introduced as a second fluid into the first fluid film formed between the processing surfaces 1 and 2 from the second introduction part d2 which is a separate flow path.
- the first fluid and the second fluid are disposed between the processing surfaces 1 and 2 whose distance is fixed by the pressure balance between the supply pressure of the fluid to be processed and the pressure applied between the rotating processing surfaces. Can be mixed and a nanoparticle precipitation reaction can be performed.
- the second fluid is introduced from the first introduction part d1 and the first fluid is introduced from the second introduction part d2, contrary to the above. It is also possible to introduce a solution containing.
- the expressions “first” and “second” in each solvent only have a meaning for identification that they are the n-th of a plurality of solvents, and third or more solvents may exist.
- the third introduction part d3 can be provided in the processing apparatus.
- the first introduction part d1 to the first fluid As a raw material solution not containing a doping element-containing substance
- a second introducing part d2 to a second fluid as a second fluid As a second fluid
- a third introducing part d3 to a third fluid as a third fluid containing a deposition solvent respectively. It is possible to introduce.
- a combination of fluids to be processed (first fluid to third fluid) to be introduced into each introduction portion can be set arbitrarily.
- concentration and pressure of each solution can be managed separately, and precipitation reaction and stabilization of the particle diameter of a nanoparticle can be controlled more precisely.
- the fourth or more introduction portions are provided, and the fluid to be introduced into the processing apparatus can be subdivided in this way.
- the dope element or the dope element-containing substance may be dissolved in either the raw material solution or the precipitation solvent, or may be dissolved in both the raw material solution and the precipitation solution and introduced into the processing apparatus. .
- “from the center” means “from the first introduction part d1” of the processing apparatus shown in FIG. 1 described above, and the first fluid is the first processed object described above.
- the fluid refers to the fluid
- the second fluid refers to the aforementioned second fluid to be treated that is introduced from the second introduction part d2 of the processing apparatus shown in FIG.
- Examples 1 to 12 As in Examples 1 to 12, as shown in FIG. 1, between processing surfaces 1 and 2 having processing surfaces that can be approached and separated and arranged opposite to each other, at least one of which rotates relative to the other.
- the raw material solution and the solvent for precipitation are mixed using a reaction apparatus that uniformly diffuses, stirs, and mixes in a thin film fluid that is formed, and a crystallization reaction is performed in the thin film fluid.
- a raw material solution in which zinc oxide powder was dissolved in 30% NaOH aqueous solution was introduced as a second fluid between the processing surfaces at 5 mL / min.
- the first fluid and the second fluid were mixed in the thin film, and sodium-doped zinc oxide nanoparticles were ejected from the processing surface as metal compound nanoparticles.
- Table 1 shows the processing temperature as the feeding temperature of the first fluid and the second fluid.
- This liquid feeding temperature was measured immediately before the mixing portion of the first fluid and the second fluid (in other words, immediately before each fluid was introduced into the processing apparatus).
- the metal compound nanoparticles are loosely agglomerated, and the metal compound nanoparticles are precipitated by a centrifuge ( ⁇ 8000 G) as a washing operation, and the supernatant liquid is removed. After removal, pure water was added to redisperse the metal compound nanoparticles, and sedimented again using a centrifuge. After the above washing operation was performed three times, the finally obtained metal compound nanoparticle paste was vacuum dried at 60 ° C. and ⁇ 0.1 MPaG.
- Example 1 shows the results (Examples 1 to 12) of the experiment conducted by changing the mixing ratio of methanol and toluene and the processing temperature (liquid feeding temperature of the first fluid and the second fluid). Moreover, the TEM photograph of the metal compound (zinc oxide) nanoparticles produced in Example 1 is shown in FIG. 4, and the XRD measurement results are shown in FIG. From Table 1, the amount of sodium added to zinc oxide (dope amount) can be controlled by using a mixed solvent in which the mixing ratio of methanol and toluene is controlled as the zinc oxide precipitation solvent (first fluid). Recognize. Moreover, the addition amount (dope amount) of sodium to zinc oxide was changed by changing the liquid feeding temperature for both the first fluid and the second fluid.
- Examples 13 to 14 As Embodiments 13 to 14, as shown in FIG. 1, between processing surfaces 1 and 2 having processing surfaces which are disposed opposite to each other and which can be approached / separated, at least one of which rotates relative to the other.
- the raw material solution and the solvent for precipitation are mixed using a reaction apparatus that uniformly diffuses, stirs, and mixes in a thin film fluid that is formed, and a crystallization reaction is performed in the thin film fluid.
- a raw material solution in which silver acetate and manganese acetate were dissolved in an aqueous acetic acid solution was introduced as a second fluid between the processing surfaces at 5 mL / min.
- the first fluid and the second fluid were mixed in the thin film, and manganese-doped silver acetate nanoparticles were ejected from the processing surface as metal compound nanoparticles.
- the metal compound nanoparticles are loosely agglomerated, the metal compound nanoparticles are sedimented by a centrifuge ( ⁇ 23000G) as a washing operation, and the supernatant liquid is removed. After removal, pure water was added to redisperse the metal compound nanoparticles, and sedimented again using a centrifuge. After the above washing operation was performed three times, the finally obtained metal compound nanoparticle paste was vacuum dried at 60 ° C. and ⁇ 0.1 MPaG. The obtained metal compound nanoparticle powder was subjected to ICP measurement, and the manganese concentration relative to silver acetate was calculated from the measurement result.
- Table 2 shows the results (Examples 13 to 14) of experiments conducted by changing the mixing ratio of methanol and toluene. From Table 2, it can be seen that the amount of manganese added to silver acetate (doping amount) can be controlled by using a mixed solvent in which the mixing ratio of methanol and toluene is controlled as the silver acetate precipitation solvent (first fluid). .
- Examples 15 to 17 As Embodiments 15 to 17, as shown in FIG. 1, between processing surfaces 1 and 2 having processing surfaces which are disposed opposite to each other and can be moved away from each other, at least one of which rotates relative to the other.
- the raw material solution and the solvent for precipitation are mixed using a reaction apparatus that uniformly diffuses, stirs, and mixes in a thin film fluid that is formed, and a crystallization reaction is performed in the thin film fluid.
- an aqueous sodium hydroxide solution (50% NaOH aq), methanol and hexane (sodium hydroxide is less soluble than methanol. Sodium hydroxide is insoluble in hexane).
- the first fluid and the second fluid were mixed in the thin film, and sodium-doped magnesium hydroxide nanoparticles were discharged from the processing surface as metal compound nanoparticles.
- the metal compound nanoparticles are loosely agglomerated, and as a washing operation, the metal compound nanoparticles are precipitated with a centrifuge ( ⁇ 3500G), and the supernatant liquid is removed. After removal, pure water was added to redisperse the metal compound nanoparticles, and sedimented again using a centrifuge. After the above washing operation was performed three times, the finally obtained metal compound nanoparticle paste was vacuum dried at 60 ° C. and ⁇ 0.1 MPaG.
- the obtained metal compound nanoparticle powder was subjected to ICP measurement, and the concentration of sodium relative to magnesium hydroxide was calculated from the measurement result.
- Table 3 shows the results (Examples 15 to 17) of the experiment performed by changing the mixing ratio of the aqueous sodium hydroxide solution, methanol, and hexane. From Table 3, the amount of sodium added to magnesium hydroxide (doping amount) can be determined by using a mixed solvent in which the mixing ratio of aqueous sodium hydroxide, methanol and hexane is controlled as the magnesium hydroxide precipitation solvent (first fluid). You can see that it is in control.
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Abstract
Description
また請求項8の発明にあっては、請求項1~7の発明における制御の一類型として、少なくとも1種類のドープ元素またはドープ元素含有物質が、上記原料溶液の溶媒と、上記析出用溶媒と、上記原料溶液及び上記析出用溶媒以外のさらに他の少なくとも1種の溶媒との、少なくとも何れかの溶媒に溶解しているという条件下にあっても、ドープ元素を含まないナノサイズの金属化合物等の析出物を安価且つ安定的に提供することができたものである。
本発明における化合物としては、特に限定されないが、一例を挙げると、上記に挙げた金属または非金属の塩、酸化物、窒化物、炭化物、錯体、有機塩、有機錯体、有機化合物などが挙げられる。
この鏡面研磨の面粗度は、特に限定されないが、好ましくはRa0.01~1.0μm、より好ましくはRa0.03~0.3μmとする。
このように、3次元的に変位可能に保持するフローティング機構によって、第2処理用部20を保持することが望ましい。
P=P1×(K-k)+Ps
なお、図示は省略するが、近接用調整面24を離反用調整面23よりも広い面積を持ったものとして実施することも可能である。
この凹部13の先端と第1処理用面1の周面との間には、凹部13のない平坦面16が設けられている。
実施例1~12として、図1に示すように、対向して配設された接近・離反可能な処理用面をもつ、少なくとも一方が他方に対して回転する処理用面1,2の間にできる薄膜流体中で、均一に拡散・攪拌・混合する反応装置を用いて、原料溶液と析出用溶媒とを混合し、薄膜流体中で晶析反応を行う。
吐出された金属化合物ナノ粒子分散液中より不純物を除去するために、金属化合物ナノ粒子を緩く凝集させ、洗浄操作として遠心分離機(×8000G)にて金属化合物ナノ粒子を沈降させ、上澄み液を除去した後、純水を加えて金属化合物ナノ粒子を再分散し、再度遠心分離機を用いて沈降させた。上記洗浄操作を3回行ったあと、最終的に得られた金属化合物ナノ粒子のペーストを60℃、-0.1MPaGにて真空乾燥した。得られた金属化合物ナノ粒子粉末のICP測定を行い、測定結果から酸化亜鉛に対するナトリウム濃度を算出した。
メタノールとトルエンの混合比率と処理温度(第一流体及び第2流体の送液温度)を変更して、実験を行った結果(実施例1~12)を表1に示す。また、実施例1において作製された金属化合物(酸化亜鉛)ナノ粒子のTEM写真を図4に、XRD測定結果を図5に示す。表1より、メタノールとトルエンの混合比を制御した混合溶媒を酸化亜鉛析出用溶媒(第一流体)として用いる事によって、酸化亜鉛へのナトリウムの添加量(ドープ量)が制御できている事がわかる。
また、第1流体及び第2流体ともに送液温度を変化することにより、酸化亜鉛へのナトリウムの添加量(ドープ量)が変化した。
実施例13~14として、図1に示すように、対向して配設された接近・離反可能な処理用面をもつ、少なくとも一方が他方に対して回転する処理用面1,2の間にできる薄膜流体中で、均一に拡散・攪拌・混合する反応装置を用いて、原料溶液と析出用溶媒とを混合し、薄膜流体中で晶析反応を行う。
吐出された金属化合物ナノ粒子分散液中より不純物を除去するために、金属化合物ナノ粒子を緩く凝集させ、洗浄操作として遠心分離機(×23000G)にて金属化合物ナノ粒子を沈降させ、上澄み液を除去した後、純水を加えて金属化合物ナノ粒子を再分散し、再度遠心分離機を用いて沈降させた。上記洗浄操作を3回行ったあと、最終的に得られた金属化合物ナノ粒子のペーストを60℃、-0.1MPaGにて真空乾燥した。得られた金属化合物ナノ粒子粉末のICP測定を行い、測定結果から酢酸銀に対するマンガンの濃度を算出した。
メタノールとトルエンの混合比率を変更して、実験を行った結果(実施例13~14)を表2に示す。表2より、メタノールとトルエンの混合比を制御した混合溶媒を酢酸銀析出用溶媒(第1流体)として用いる事によって、酢酸銀に対するマンガンの添加量(ドープ量)を制御できている事がわかる。
実施例15~17として、図1に示すように、対向して配設された接近・離反可能な処理用面をもつ、少なくとも一方が他方に対して回転する処理用面1,2の間にできる薄膜流体中で、均一に拡散・攪拌・混合する反応装置を用いて、原料溶液と析出用溶媒とを混合し、薄膜流体中で晶析反応を行う。
吐出された金属化合物ナノ粒子分散液中より不純物を除去するために、金属化合物ナノ粒子を緩く凝集させ、洗浄操作として遠心分離機(×3500G)にて金属化合物ナノ粒子を沈降させ、上澄み液を除去した後、純水を加えて金属化合物ナノ粒子を再分散し、再度遠心分離機を用いて沈降させた。上記洗浄操作を3回行ったあと、最終的に得られた金属化合物ナノ粒子のペーストを60℃、-0.1MPaGにて真空乾燥した。得られた金属化合物ナノ粒子粉末のICP測定を行い、測定結果から水酸化マグネシウムに対するナトリウムの濃度を算出した。
水酸化ナトリウム水溶液とメタノールとヘキサンの混合比率を変更して、実験を行った結果(実施例15~17)を表3に示す。表3より、水酸化ナトリウム水溶液とメタノールとヘキサンの混合比を制御した混合溶媒を水酸化マグネシウム析出用溶媒(第1流体)として用いる事によって、水酸化マグネシウムに対するナトリウムの添加量(ドープ量)を制御できている事がわかる。
2 第2処理用面
10 第1処理用部
11 第1ホルダ
20 第2処理用部
21 第2ホルダ
d1 第1導入部
d2 第2導入部
d20 開口部
Claims (8)
- 被処理流動体として少なくとも2種類の流体を用いるものであり、
そのうちで少なくとも1種類の流体は、被析出物質が溶媒に溶解された原料溶液であり、
上記以外の流体で少なくとも1種類の流体は、上記被析出物質を析出させるための少なくとも1種類の析出用溶媒であり、
少なくとも1種類のドープ元素またはドープ元素含有物質が、
上記原料溶液の溶媒と、
上記析出用溶媒と、
上記原料溶液及び上記析出用溶媒以外のさらに他の少なくとも1種の溶媒との、少なくとも何れかの溶媒に溶解しているものであり、
上記の2種又は3種以上の被処理流動体を混合し、ドープ元素量を制御された析出物質の製造方法において、
上記析出用溶媒に対するドープ元素またはドープ元素含有物質の溶解度を制御する事によって、上記被析出物質に含まれるドープ元素量を制御するものであり、
上記被処理流動体を、対向して配設された、接近・離反可能な、少なくとも一方が他方に対して相対的に回転する少なくとも2つの処理用面の間にできる薄膜流体中で混合し、ドープ元素量を制御された被析出物質を析出させる事を特徴とする析出方法。 - 上記被析出物質が、少なくとも1種類の金属または金属化合物であり、
上記析出用溶媒は、上記少なくとも1種類の金属または金属化合物を析出させるための析出用溶媒であることを特徴とする請求項1記載の析出方法。 - 上記原料溶液を含む流体と上記析出用溶媒とを含む流体とのうちいずれか一方が上記薄膜流体を形成しながら上記両処理用面間を通過し、
上記いずれか一方の流体が流される流路とは独立した別途の導入路を備えており、
上記少なくとも2つの処理用面の少なくとも何れかが、上記の導入路に通じる開口部を少なくとも一つ備え、
上記原料溶液を含む流体と上記析出用溶媒とを含む流体とのうちいずれか他方を、上記開口部から上記処理用面の間に導入し、
上記原料溶液を含む流体と上記析出用溶媒とを含む流体とが、上記薄膜流体内で混合されることを特徴とする請求項1に記載の析出方法。 - 被処理流動体として第1、第2、第3の少なくとも3種類の流体を用いるものであり、
上記第1流体は、上記原料溶液を含む流体であり、
上記第2流体は、上記少なくとも1種類のドープ元素またはドープ元素含有物質が溶媒に溶解されたドープ元素含有物質溶液であり、
上記第3流体は、上記析出用溶媒を含む流体であり、
上記3種類の流体のうちいずれか1種の流体が上記薄膜流体を形成しながら上記両処理用面間を通過し、
上記いずれか一方の流体が流される流路とは独立した別途の導入路を少なくとも2つ備えており、
この少なくとも2つの別途の導入路は互いに独立しており、
上記少なくとも2つの処理用面の少なくとも何れかが、上記少なくとも2つの別途の導入路毎に別々に通じる開口部を備え、
上記3種類の流体のうち残りの2種の流体を、上記別々の開口部から上記処理用面の間に導入し、
上記3種類の流体が、上記薄膜流体内で混合されることを特徴とする請求項1記載の析出方法。 - 上記第1流体と上記第3流体とは、ドープ元素またはドープ元素含有物質を含まない溶液であることを特徴とする請求項4記載の析出方法。
- 上記析出用溶媒は、複数種類の溶媒の混合溶媒であり、
上記混合溶媒のうちの少なくとも1種の溶媒は、上記被析出物質及び上記ドープ元素またはドープ元素含有物質を溶解可能な溶媒であり、
上記混合溶媒のうちの少なくとも他の1種の溶媒は、上記被析出物質を溶解可能であり、且つ、上記ドープ元素またはドープ元素含有物質の溶解度が上記混合溶媒における上記1種の溶媒よりも小さい溶媒であり、
上記混合溶媒における上記1種の溶媒と上記他の1種の溶媒との混合比率を制御する事によって、上記被析出物質に含まれるドープ元素量を制御することを特徴とする請求項1記載の析出方法。 - 上記被処理流動体の温度を制御する事によって、上記被析出物質に含まれるドープ元素量を制御することを特徴とする請求項1記載の析出方法。
- 上記析出用溶媒の上記ドープ元素またはドープ元素含有物質に対する溶解度を高く設定することによって、上記ドープ元素を実質的に含まない被析出物質を析出させるものであり、
上記高く設定された溶解度が、上記ドープ元素を実質的に含む被析出物質を析出させる場合の溶解度よりも、高い溶解度である事を特徴とする請求項1記載の析出方法。
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