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WO2011072490A1 - 一种化学机械抛光液 - Google Patents

一种化学机械抛光液 Download PDF

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Publication number
WO2011072490A1
WO2011072490A1 PCT/CN2010/002061 CN2010002061W WO2011072490A1 WO 2011072490 A1 WO2011072490 A1 WO 2011072490A1 CN 2010002061 W CN2010002061 W CN 2010002061W WO 2011072490 A1 WO2011072490 A1 WO 2011072490A1
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WIPO (PCT)
Prior art keywords
polishing liquid
mechanical polishing
chemical mechanical
liquid according
copper
Prior art date
Application number
PCT/CN2010/002061
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English (en)
French (fr)
Inventor
何华锋
王晨
Original Assignee
安集微电子（上海）有限公司
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Publication of WO2011072490A1 publication Critical patent/WO2011072490A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a chemical mechanical polishing liquid, and in particular to a chemical mechanical polishing liquid containing abrasive particles, an oxidizing agent, a polyhydroxy compound, an organic base and water.
  • TSV technology (Through-Silicon-Via) is the latest technology to achieve interconnection between chips by making vertical conduction between the chip and the chip, between the wafer and the wafer. Unlike previous IC package bonding and bump overlay technology, TSV has the advantage of maximizing the density of stacked chips in the three-dimensional direction, minimizing the size of the interconnect, and shortening the interconnect to improve chip speed and low power consumption.
  • backside thinning requires polishing at the same time, and has a very high polishing rate for both silicon and copper materials.
  • Polishing of silicon is usually carried out under alkaline conditions, and a higher polishing speed can be obtained.
  • US2002032987 discloses a polishing solution using an alcoholamine as an additive to increase the removal rate of polysilicon, wherein the additive is preferably 2-(dimethylamino).
  • US2002151252 discloses a polishing fluid comprising a complexing agent having a plurality of carboxylic acid structures for increasing the rate of polysilicon removal, wherein the preferred complexing agents are EDTA (ethylenediaminetetraacetic acid) and DTPA (diethyltriamine). Pentaacetic acid).
  • EDTA ethylenediaminetetraacetic acid
  • DTPA diethyltriamine
  • EP1072662 discloses a polishing liquid containing a lone pair of electrons and a double bond to generate a delocalized organic substance to increase the removal rate of polysilicon.
  • the preferred compound is a confirmation.
  • Terpenoid compounds and their salts are also included in the polishing liquid containing a lone pair of electrons and a double bond to generate a delocalized organic substance to increase the removal rate of polysilicon.
  • US2006014390 discloses a polishing liquid for increasing the removal rate of polycrystalline silicon, which comprises from 4.25% to 18.5% by weight of abrasive and from 0.05% to 1.5% by weight of an additive.
  • the additive is mainly selected from organic bases such as quaternary ammonium salts, quaternary ammonium bases and ethanolamines.
  • the polishing liquid further contains a nonionic surfactant such as a homopolymer or copolymerization product of ethylene glycol or propylene glycol.
  • CN101497765A significantly improves the polishing speed of silicon by utilizing the synergistic action of biguanide and azole materials.
  • the polishing of copper is usually carried out under acidic conditions, using a high oxidation potential of an oxidizing agent (hydrogen peroxide) under acidic conditions, and easy coordination and dissolution of copper under acidic conditions to achieve a high polishing rate.
  • an oxidizing agent hydrogen peroxide
  • CN1705725A discloses a polishing liquid for polishing a copper metal surface, the polishing liquid being between 2.5 and 4.0, and removing the surface of the copper metal by the action of an oxidizing agent (hydrogen peroxide, etc.), a chelating agent and a passivating agent.
  • an oxidizing agent hydrogen peroxide, etc.
  • a chelating agent and a passivating agent.
  • CN1787895 A discloses a CMP composition
  • a CMP composition comprising a fluid agent together with an oxidizing agent, a chelating agent, an inhibitor, an abrasive, and a solvent.
  • a CMP composition advantageously increases the material selectivity in the CMP process and can be used to polish the surface of a copper component on a semiconductor substrate without creating depressions or other unfavorable planarization in the polished copper. defect.
  • CN01818940A discloses that a copper polishing slurry can be formed by further combining with an oxidizing agent such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole to increase the copper removal rate. This higher polishing rate is achieved while maintaining local PH stability and significantly reducing overall and localized corrosion.
  • an oxidizing agent such as hydrogen peroxide
  • a corrosion inhibitor such as benzotriazole
  • Polishing of copper is sometimes carried out under alkaline conditions, such as: CN1644640A discloses an aqueous composition for polishing copper under alkaline conditions, the composition comprising from 0.001% to 6% by weight of a non-ferrous metal inhibitor, and from 0.05% to 10% by weight of the metal.
  • the agent is a copper remover for accelerating the removal of copper in a percentage by weight of 0.01% to 25%, an abrasive of 0.5% to 40% by weight, etc., and the removal of copper is enhanced by the interaction of the copper remover imidazole and BTA. rate.
  • CN1398938A discloses a chemical mechanical global planarization polishing liquid for multi-scale integrated circuit multilayer copper wiring, which is used for improving the removal rate of copper.
  • the composition of the polishing liquid is as follows: the weight percentage of the abrasive is 18% to 50%, the chelating agent The weight percentage is from 0.1% to 10%, the weight percent of the complexing agent is from 0.005% to 25%, the weight percent of the active agent is from 0.1% to 10%, the weight percent of the oxidizing agent is from 1% to 20%, and deionized water.
  • polishing under acidic conditions although a high copper polishing speed can be obtained, the polishing speed for silicon is generally low. The reason is that under acidic conditions, the polishing speed of silicon is generally lower than that under alkaline conditions.
  • the oxidant oxidizes the surface of elemental silicon to silicon dioxide, compared with silicon. Silica is more difficult to remove.
  • polishing under alkaline conditions if no oxidizing agent is applied, although a high silicon polishing speed can be obtained, the polishing speed for copper is generally low. The reason is that copper needs to be oxidized before it is easily removed. However, if an oxidizing agent is added, similar to that under acidic conditions, the oxidizing agent oxidizes the surface of elemental silicon to silica, which is more difficult to remove. In addition, under alkaline conditions, oxidants such as hydrogen peroxide are very unstable and will rapidly decompose and fail.
  • the specific oxidizing agent and polyhydroxy compound of the present invention significantly improve the polishing rate of copper in an alkaline polishing environment while increasing the polishing speed of silicon.
  • the technical problem solved by the invention is that the polishing rate of copper under alkaline conditions is significantly improved by adding a specific oxidizing agent and a polyhydroxy compound, so that the polishing speed of silicon and copper can be "simultaneously" improved under alkaline polishing conditions.
  • the chemical mechanical polishing liquid of the present invention contains abrasive particles, an oxidizing agent, a polyhydroxy compound, an organic base and water.
  • the abrasive particles are selected from one or more of SiO 2 , A1 2 0 3 , Zr0 2 , CeO 2 , SiC, Fe 2 O 3 , Ti 2 2 and/or Si 3 N 4 . It is preferably Si0 2 .
  • the abrasive particles have a mass percentage of 2 to 25%, preferably 5 to 15%.
  • the oxidizing agent is one or more selected from the group consisting of perchlorate, nitrate, iodate, monopersulfate and/or 3-nitrobenzenesulfonate.
  • the iodate salt is a potassium salt
  • the nitrate salt is an ammonium nitrate salt and/or a potassium salt.
  • the oxidizing agent has a mass percentage of 1 to 3%.
  • the polyhydroxy compound is a saccharide.
  • the saccharide is glucose and/or lactose
  • the organic base is an organic amine and/or a quaternary ammonium base
  • the organic amine is ethylenediamine and/or piperazine
  • the quaternary ammonium base is four.
  • Methyl ammonium hydroxide is Methyl ammonium hydroxide.
  • the organic base has a mass percentage of 1 to 10%.
  • a pH adjuster is contained.
  • the chemical mechanical polishing liquid of the present invention has a pH of from 10.0 to 12.0.
  • the positive progress of the present invention is that the polishing speed of copper under alkaline conditions is remarkably improved, so that the polishing speed of silicon and copper is significantly improved at the same time under alkaline polishing conditions.
  • Table 1 shows the formulations of the chemical mechanical polishing liquids of the present invention in Examples 1 to 25 and Comparative Examples 1 to 3, according to the components listed in Table 1 and their contents, uniformly mixed in deionized water, and adjusted with a pH adjusting agent.
  • a chemical mechanical polishing solution can be prepared at the desired pH.
  • Polishing machine is Logitech (UK) 1PM52 type, polytex polishing pad, 4cm X 4cm square wafer (Wafer), grinding pressure 3psi, grinding table speed 70 rev / min, grinding head rotation speed 150 rev / min, polishing
  • the droplet acceleration is 100 ml/min.
  • Example 12 873 3797.6 From the data of Comparative Examples 1-3, it was found that the removal rates of copper and silicon were very low in the presence of only the abrasive.
  • Example 7 From the data of Example 7 and Example 12, it was found that, by changing the concentration of the abrasive only when the oxidizing agent and the polyhydroxy compound were unchanged, it was found that the polishing agent concentration was not significantly improved in the removal rate of copper and silicon.
  • the improvement of the embodiment 7 is better than that of the embodiment 12.
  • Example 6 From the data of Example 6 and Example 9, it was found that the amount of oxidizing agent was increased, and the removal rates of copper and silicon were remarkably improved.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Description

一种化学机械抛光液 技术领域
本发明涉及一种化学机械抛光液，具体涉及一种含有研磨颗粒，氧化剂， 多羟基化合物， 有机碱和水的化学机械抛光液。
技术背景
TSV技术 （Through-Silicon-Via)是通过在芯片和芯片之间、 晶圆和晶 圆之间制作垂直导通， 实现芯片之间互连的最新技术。 与以往的 IC封装键 合和使用凸点的叠加技术不同， TSV优势在于能够使芯片在三维方向堆叠的 密度最大， 外形尺寸最小， 缩短了互连从而改善芯片速度和低功耗的性能。
TSV技术中晶背减薄技术（backside thinning)需要抛光时，对硅和铜两 种材料同时具有非常高的抛光速度。
对硅的抛光通常都在碱性条件下进行，可以获得较高的抛光速度。例如： US2002032987公开了一种用醇胺作为添加剂的抛光液， 以提高多晶硅 (Poly silicon) 的去除速率（removal rate), 其中添加剂优选 2- (二甲氨基）
-2-甲基 -1-丙醇。
US2002151252 公开了一种含具有多个羧酸结构的络合剂的抛光液， 用 于提高多晶硅去除速率， 其中优选的络合剂是 EDTA (乙二胺四乙酸） 和 DTPA (二乙基三胺五乙酸）。
EP1072662公开了一种含孤对电子和双键产生离域结构的有机物的抛光 液， 以提高多晶硅（Poly silicon)的去除速率（removal rate), 优选化合物是 确认本 胍类的化合物及其盐。
US2006014390 公开了一种用于提高多晶硅的去除速率的抛光液， 其包 含重量百分比为 4.25%〜18.5%研磨剂和重量百分比为 0.05%〜1.5%的添加 剂。其中添加剂主要选自季铵盐、 季胺碱和乙醇胺等有机碱。 此外， 该抛光 液还包含非离子型表面活性剂， 例如乙二醇或丙二醇的均聚或共聚产物。
CN101497765A通过利用双胍和唑类物质的协同作用， 显著提高了硅的 抛光速度。
对铜的抛光通常都在酸性条件下进行， 利用氧化剂（双氧水）在酸性条 件下的高氧化电势， 以及铜在酸性条件下易配位、溶解，实现高的抛光速度。 例如：
CN1705725A公开一种抛光铜金属表面的抛光液， 该抛光液处在 2.5至 4.0之间， 在氧化剂（双氧水等）、 螯合剂和钝化剂的作用下， 去除铜金属的 表面。
CN1787895 A公开了一种 CMP组合物， 其包含流体剂以及氧化剂、 鳌 合剂、 抑制剂、 研磨剂和溶剂。 在酸性条件下， 这种 CMP组合物有利地增 加在 CMP方法中的材料选择性， 可用于抛光半导体衬底上铜元件的表面， 而不会在抛光的铜内产生凹陷或其他不利的平坦化缺陷。
CN01818940A 公开了一种铜抛光浆料可通过进一步与氧化剂如过氧化 氢， 和 /或腐蚀抑制剂如苯并三唑相组合而形成， 提高了铜的移除速率。在 获得这较高的抛光速率的同时维持了局部 PH的稳定性， 并显著减少了整体 和局部腐蚀。
对铜的抛光有时也会在碱性条件下进行， 例如： CN1644640A公开一种在碱性条件下用于抛光铜的水性组合物， 该组合 物包含重量百分比为 0.001%至 6%的非铁金属抑制剂， 重量百分比为 0.05% 至 10%该金属的配位剂，重量百分比为 0.01%至 25%用于加速铜的去除的铜 去除剂， 重量百分比为 0.5%至 40%的研磨剂等， 通过铜去除剂咪唑和 BTA 的相互作用， 提高了铜的去除速率。
CN1398938A中公开一种超大规模集成电路多层铜布线用化学机械全局 平面化抛光液， 用于提高铜的去除速率， 抛光液的组成成分如下： 磨料的重 量百分比 18%至 50%, 螯合剂的重量百分比 0.1%至 10%， 络合剂的重量百 分比 0.005%至 25%， 活性剂的重量百分比 0.1%至 10%， 氧化剂的重量百分 比 1%至 20%， 和去离子水。
在现有技术中， 在酸性条件下抛光， 虽然可以获得很高的铜抛光速度， 但是对硅的抛光速度通常较低。原因是在酸性条件下， 硅的抛光速度普遍低 于在碱性条件下的抛光速度， 另外， 如果在酸性条件下加入氧化剂， 氧化 剂将单质硅的表面氧化成二氧化硅， 与硅相比， 二氧化硅更难去除。
在碱性条件下抛光，如果不加氧化剂，虽然可以获得很高的硅抛光速度， 但是对铜的抛光速度通常较低。 原因是铜需要氧化后才易被去除。但是， 如 果加了氧化剂， 和在酸性条件下类似， 氧化剂会将单质硅的表面氧化成二氧 化硅， 更难去除。 除此之外， 在碱性条件下， 双氧水等氧化剂很不稳定， 会 迅速分解失效。
本发明特定的氧化剂和多羟基化合物， 在提高硅的抛光速度的同时， 又 显著提高了在碱性抛光环境下的铜的抛光速度。 发明概要
本发明解决的技术问题是通过加入特定的氧化剂和多羟基化合物显著 提高了在碱性条件下的铜的抛光速度， 使得在碱性抛光条件下， 硅和铜的抛 光速度能 "同时"显著提高的问题。
本发明的化学机械抛光液， 含有研磨颗粒， 氧化剂， 多羟基化合物， 有 机碱和水。
本发明中，所述的研磨颗粒选自 Si02、 A1203、 Zr02、 Ce02、 SiC、 Fe203、 Ti02和 /或 Si3N4中的一种或多种。 较佳地为 Si02。
本发明中，所述的研磨颗粒的质量百分含量为 2~25%，较佳地为 5~15%。 本发明中， 所述的氧化剂选自高氯酸盐、 硝酸盐、 碘酸盐、 单过硫酸盐 和 /或 3-硝基苯磺酸盐中的一种或多种。 所述的碘酸盐为钾盐， 所述的硝酸 盐为硝酸铵盐和 /或钾盐。
本发明中， 所述的氧化剂的质量百分含量为 1~3%。
本发明中，所述的多羟基化合物为糖类。所述的糖类为葡萄糖和 /或乳糖， 所述的有机碱为有机胺和 /或季铵碱， 所述的有机胺为乙二胺和 /或哌嗪， 所 述的季铵碱为四甲基氢氧化铵。
本发明中， 所述的有机碱的质量百分含量为 1~10%。
本发明中， 含有 pH调节剂。 本发明的化学机械抛光液的 pH值为 10.0〜12.0。
本发明的积极进步效果在于： 显著提高了在碱性条件下的铜的抛光速 度， 使得在碱性抛光条件下， 硅和铜的抛光速度同时被显著地提高。 发明内容
制备实施例 下面用实施例来进一步说明本发明， 但本发明并不受其限制。下述实施 例中， 百分比均为质量百分比。
羝
表 1给出了本发明的化学机械抛光液实施例 1~25及对比例 1〜3的配方， 按表 1中所列组分及其含量， 在去离子水中混合均匀， 用 pH调节剂调到所 需 pH值， 即可制得化学机械抛光液。
表 1本发明的化学机械抛光液制备实施例 1~25及对比例 1~3
研磨颗粒 氧化剂 多羟基化合物 有机碱 PH 浓度 浓度 浓度 浓度
种类 种类 种类 种类
(%) (%) (%) (%)
葡萄
实施例 1 Si02 2% 高氯酸铵 1% 1% 哌嗪 1% 1 1.14
糖
葡萄 四甲基氢氧
实施例 2 SiOz 2% 1% 1% 10.00% 10.543
糖 化铵
四甲基氢氧
实施例 3 SiOz 5% 3% 乳糖 2% 10.00% 10.537
化铰
葡萄 四甲基氢氧
实施例 4 Si02 5% 硝酸铵 3% 1% 10.00% 10
糖 化铵
单过硫酸氢 葡萄 四甲基氢氧
实施例 5 Si02 5% 1% 2% 10.00% 10.8
钟 糖 化铵
实施例 6 Si02 15% 碘酸钾 1% 乙二胺 1.00% 1 1.1
葡萄
实施例 7 Si02 15% 碘酸钾 1% 2% 乙二胺 5.00% 1 1.088
糖
葡萄
实施例 8 Si02 15% 碘酸钾 2% 2% 乙二胺 1.00% 1 1.152
糖
实施例 9 Si02 15% 碘酸钾 2% 哌嗪 1.00% 10.945 实施例 3-硝基苯磺
Si02 15% 1% 乙二胺 1.00% 10.846 10 酸钠 实施例 3-硝基苯磺 葡萄
Si02 15% 1% 2% 乙二胺 1.00% 10.746
1 1 酸钠 糖
实施例 葡萄
Si02 25% 碘酸钾 1% 2% 哌嗪 1.00% 10.746
12 糖
实施例 葡萄 四甲基氢氧
Si02 2% 高氯酸铵 1% 2% 10.00% 10.57 13 羝羝 糖 化铵
觀翻趙
实施例 隳 葡萄 四甲基氢氧
Si02 2% 3% 2% 10.00% 10 14 糖 化铰
实施例 四甲基氢氧
Si02 5% 高氯酸铵 1% 10.00% 1 1.877 15 化铵
实施例 四甲基氢氧
Si02 5% 高氯酸铵 1% 1% 10.00% 12 16 糖 化铵
实施例 葡萄
Fe203 5% 高氯酸铰 3% 2% 乙二胺 5.00% 11.05 17 糖
实施例 葡萄
Ti02 5% 3% 2% 乙二胺 5.00% 1 1.1 18 糖
实施例 四甲基氢氧
Si02 15% 3% 乳糖 2% 10.00% 10.61 1 19 化铰
实施例
A1203 15% 高氯酸铵 3% 乳糖 2% 哌嗪 1.00% 1 1.152 20
实施例 四甲基氢氧
S13N4 15% 高氯酸铰 1% 乳糖 2% 10.00% 10.64 21 化铰
实施例 葡萄
SiC 15% 3% 2% 哌嗪 1.00% 1 1.23 22 糖
实施例 葡萄 四甲基氢氧
Si02 25% 3% 2% 10.00% 10.6 23 糖 化铰
实施例 葡萄 四甲基氢氧
Ce02 25% 硝酸铵 2% 2% 10.00% 10.535 24 糖 化铵 实施例 Zr02 25% 3% 乳糖 1% 哌嗪 1.00% 1 1.22 25
四甲基氢氧
对比例 1 Si02 2% 0.10% 10.528
化铵 四甲基氢氧
对比例 2 Si02 5% 0.10% 10.547
化铵
四甲基氢氧
对比例 3 Si02 15% 0.10% 10.551
化铵
效果实施例
抛光条件：抛光机台为 Logitech (英国） 1PM52型， polytex抛光垫， 4cm X 4cm正方形晶圆 （Wafer), 研磨压力 3psi， 研磨台转速 70转 /分钟， 研磨 头自转转速 150转 /分钟， 抛光液滴加速度 100ml/分钟。
表 2实施例 1~6以及对比例 1~3的效果实施例
Cu的去除速率 多晶硅的去除速率
A/min A/min
对比例 1 224 1581.6
对比例 2 376 1704
对比例 3 392 1904.4
实施例 1 919 191 1
实施例 2 731 1879.6
实施例 3 1296 1960.4
实施例 4 1 196 1900
实施例 5 2097 1907.9
实施例 6 807 4490
实施例 7 896 3826.4
实施例 8 1 135 4968.4
实施例 9 1005 4762.8
实施例 10 902 3992.4
实施例 1 1 1 107 3892.4
实施例 12 873 3797.6 从对比例 1-3的数据中可以发现，在只有研磨剂存在的情况下， 铜和硅 的去除速率都很低。
从实施例 1-2和对比例 1的数据中可以发现，在研磨剂浓度相同的情况 下， 加入我们特定的氧化剂和多羟基化合物后， 铜和硅的去除速率有明显的 提高。
从实施例 3-5和对比例 2的数据中可以发现，在研磨剂浓度相同的情况 下， 加入我们特定的氧化剂和多羟基化合物后， 铜和硅的去除速率有明显的 提 (¾。
从实施例 6-11和对比例 3的数据中可以发现， 在研磨剂浓度相同的情 况下， 加入我们特定的氧化剂和多羟基化合物后， 铜和硅的去除速率有明显 的提高。
从实施例 7和实施例 12的数据中可以发现， 在氧化剂和多羟基化合物 不变的情况下， 通过只改变研磨剂的浓度后发现， 提高研磨剂的浓度对铜和 硅的去除速率没有明显的提高， 说明实施例 7的条件优于实施例 12。
从实施例 10和 11的数据中可以发现，多羟基化合物的存在能提高铜的 去除速率。
从实施例 6和实施例 9的数据中可以发现，提高氧化剂的量，铜和硅的 去除速率都有明显的提高。

Claims

权利要求 、 一种化学机械抛光液， 含有研磨颗粒， 氧化剂， 多羟基化合物， 有机碱 和水。 、根据权利要求 1所述的化学机械抛光液，所述的研磨颗粒选自 Si02、Al203、ΖιΌ2、 Ce02、 SiC、 Fe203、 Ti02和 /或 Si3N4中的一种或多种。 、 根据权利要求 1所述的化学机械抛光液， 所述的研磨颗粒的质量百分含 量为 2〜25%。 、 根据权利要求 1所述的化学机械抛光液， 所述的氧化剂选自高氯酸盐、 硝酸盐、 碘酸盐、 单过硫酸盐和 /或 3-硝基苯磺酸盐中的一种或多种。 、 根据权利要求 4所述的化学机械抛光液， 所述的碘酸盐为钾盐。 、 根据权利要求 4所述的化学机械抛光液， 所述的硝酸盐为硝酸铵盐和 /或 钾盐。 、 根据权利要求 1所述的化学机械抛光液， 所述的氧化剂的质量百分含量 为卜 3%0 、 根据权利要求 1所述的化学机械抛光液， 所述的多羟基化合物为糖类。 、根据权利要求 8所述的化学机械抛光液，所述的糖类为葡萄糖和 /或乳糖。0、根据权利要求 1所述的化学机械抛光液，所述的有机碱为有机胺和 /或季 铵碱。
1、 根据权利要求 10所述的化学机械抛光液， 所述的有机胺为乙二胺和 /或 哌嗪。
2、 根据权利要求 10所述的化学机械抛光液， 所述的季铵碱为四甲基氢氧 化铵。 、根据权利要求 1所述的化学机械抛光液， 所述的有机碱的质量百分含 为卜 10%。
、 根据权利要求 1所述的化学机械抛光液， 含有 pH调节剂。
、 根据权利要求 1所述的化学机械抛光液， pH值为 10.0~12.0。
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