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WO2010135444A3 - Simultaneous sample modification and monitoring - Google Patents

Simultaneous sample modification and monitoring Download PDF

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Publication number
WO2010135444A3
WO2010135444A3 PCT/US2010/035433 US2010035433W WO2010135444A3 WO 2010135444 A3 WO2010135444 A3 WO 2010135444A3 US 2010035433 W US2010035433 W US 2010035433W WO 2010135444 A3 WO2010135444 A3 WO 2010135444A3
Authority
WO
WIPO (PCT)
Prior art keywords
monitoring
sample
sample modification
simultaneous sample
charged particle
Prior art date
Application number
PCT/US2010/035433
Other languages
French (fr)
Other versions
WO2010135444A2 (en
Inventor
Rainer Knippelmeyer
Colin A. Sanford
Lawrence Scipioni
William B. Thompson
Original Assignee
Carl Zeiss Nts, Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Nts, Llc filed Critical Carl Zeiss Nts, Llc
Publication of WO2010135444A2 publication Critical patent/WO2010135444A2/en
Publication of WO2010135444A3 publication Critical patent/WO2010135444A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

Systems (100, 200) and methods for simultaneously modifying a sample (154) and monitoring sample modification. In some embodiments, a single charged particle beam (122) is used to simultaneously monitor and modify the sample. In certain embodiments, one charged particle beam is used to monitor the sample while a different charged particle beam (132) is used to simultaneously modify the sample.
PCT/US2010/035433 2009-05-20 2010-05-19 Simultaneous sample modification and monitoring WO2010135444A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17997209P 2009-05-20 2009-05-20
US61/179,972 2009-05-20

Publications (2)

Publication Number Publication Date
WO2010135444A2 WO2010135444A2 (en) 2010-11-25
WO2010135444A3 true WO2010135444A3 (en) 2011-04-07

Family

ID=42358062

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/035433 WO2010135444A2 (en) 2009-05-20 2010-05-19 Simultaneous sample modification and monitoring

Country Status (1)

Country Link
WO (1) WO2010135444A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016119791A1 (en) * 2016-10-18 2018-04-19 scia Systems GmbH Method and device for processing a surface of a substrate by means of a particle beam

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622782A (en) * 1968-09-16 1971-11-23 Minnesota Mining & Mfg Blocking apparatus and method utilizing a low-energy ion beam
US5055696A (en) * 1988-08-29 1991-10-08 Hitachi, Ltd. Multilayered device micro etching method and system
US20020066863A1 (en) * 2000-09-20 2002-06-06 Chao Peter S. Real time monitoring simultaneous imaging and exposure in charged particle beam systems
US20070158558A1 (en) * 2003-10-16 2007-07-12 Ward Billy W Ion sources, systems and methods
EP2031633A1 (en) * 2007-08-27 2009-03-04 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Gas ion source with high mechanical stability

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622782A (en) * 1968-09-16 1971-11-23 Minnesota Mining & Mfg Blocking apparatus and method utilizing a low-energy ion beam
US5055696A (en) * 1988-08-29 1991-10-08 Hitachi, Ltd. Multilayered device micro etching method and system
US20020066863A1 (en) * 2000-09-20 2002-06-06 Chao Peter S. Real time monitoring simultaneous imaging and exposure in charged particle beam systems
US20070158558A1 (en) * 2003-10-16 2007-07-12 Ward Billy W Ion sources, systems and methods
EP2031633A1 (en) * 2007-08-27 2009-03-04 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Gas ion source with high mechanical stability

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LUCILLE A GIANNUZZI ET AL: "Introduction to Focused Ion Beams, FIB-SIMS, QUANTITATIVE THREE-DIMENSIONAL ANALYSIS USING FOCUSED ION BEAM MICROSCOPY", 1 January 2005, INTRODUCTION TO FOCUSED ION BEAMS : INSTRUMENTATION, THEORY, TECHNIQUES AND PRACTICE, SPRINGER, NEW YORK, US, PAGE(S) 276 - 280,281, ISBN: 978-0-387-23116-7, XP002540689 *
PREWETT P D ET AL: "Microcircuit machining using focused ion beams-a note on the role of SIMS for end point detection", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL LNKD- DOI:10.1016/0167-9317(89)90138-X, vol. 10, no. 1, 1 September 1989 (1989-09-01), pages 1 - 9, XP024739618, ISSN: 0167-9317, [retrieved on 19890901] *

Also Published As

Publication number Publication date
WO2010135444A2 (en) 2010-11-25

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