WO2010038888A1 - 窒化酸化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマcvd装置 - Google Patents
窒化酸化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマcvd装置 Download PDFInfo
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- WO2010038888A1 WO2010038888A1 PCT/JP2009/067306 JP2009067306W WO2010038888A1 WO 2010038888 A1 WO2010038888 A1 WO 2010038888A1 JP 2009067306 W JP2009067306 W JP 2009067306W WO 2010038888 A1 WO2010038888 A1 WO 2010038888A1
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- gas
- silicon nitride
- plasma cvd
- nitride oxide
- oxide film
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- 238000000034 method Methods 0.000 title claims abstract description 81
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- 239000010703 silicon Substances 0.000 title claims abstract description 32
- 238000003860 storage Methods 0.000 title claims description 11
- 230000008569 process Effects 0.000 title abstract description 21
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000007789 gas Substances 0.000 claims abstract description 194
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 80
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 27
- 125000004429 atom Chemical group 0.000 claims abstract description 12
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 12
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 9
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims description 91
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 81
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 81
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 29
- 230000007246 mechanism Effects 0.000 claims description 26
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical group C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005049 silicon tetrachloride Substances 0.000 claims description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract description 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 216
- 210000002381 plasma Anatomy 0.000 description 34
- 239000004065 semiconductor Substances 0.000 description 23
- 239000000460 chlorine Substances 0.000 description 20
- 229910052739 hydrogen Inorganic materials 0.000 description 19
- 239000001257 hydrogen Substances 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 239000000758 substrate Substances 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 230000005855 radiation Effects 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 13
- 239000010410 layer Substances 0.000 description 13
- 239000011261 inert gas Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000010494 dissociation reaction Methods 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 5
- 230000005593 dissociations Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 208000018459 dissociative disease Diseases 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
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- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Definitions
- the present invention relates to a silicon nitride oxide film and a method for forming the same, a computer-readable storage medium used in this method, and a plasma CVD apparatus.
- silicon is oxidized or nitrided as a method for forming a high-quality silicon dioxide film (SiO 2 film), silicon nitride film (SiN film), or silicon nitride oxide film (SiON film).
- a technique of combining a thermal oxidation method, a plasma oxidation method, a plasma nitridation method, or the like is employed.
- oxidation treatment or nitriding treatment cannot be applied, and a SiO 2 film or a SiN film is deposited by a CVD (Chemical Vapor Deposition) method. is necessary.
- Patent Document 1 introduces a reaction of tetraisocyanate silane, which is a silicon-based raw material that does not contain hydrogen, and a tertiary amine gas into a reaction vessel to cause reaction.
- tetraisocyanate silane which is a silicon-based raw material that does not contain hydrogen
- a tertiary amine gas into a reaction vessel to cause reaction.
- a method for manufacturing a silicon-based insulating film in which a silicon-based insulating film not containing silicon is deposited on a substrate by a hot wall CVD method.
- Patent Document 2 SiCl 4 gas, N 2 O gas, and NO gas are introduced into a low pressure CVD apparatus, and low pressure CVD is performed at a film forming temperature of 850 ° C. and a pressure of 2 ⁇ 10 2 Pa.
- Oxynitride films that do not substantially contain hydrogen-related bonding groups such as Si groups, —OH groups, and hydrogen-related bonds such as Si—H bonds, Si—OH bonds, and N—H bonds are formed. A method to do this has also been proposed.
- Patent Document 3 a semiconductor device manufacturing method including a step of forming a SiN film or a SiON film by high-density plasma CVD using an inorganic Si-based gas not containing H and N 2 , NO, N 2 O, or the like. Has been proposed.
- Patent Document 1 can be processed at a low temperature of about 200 ° C., but is not a film formation technique using plasma. Moreover, the method of the above-mentioned Patent Document 2 is satisfactory because there is a concern that the thermal budget is increased in that it requires a film forming temperature as high as 850 ° C. in addition to the film forming technique using plasma. is not.
- Patent Document 1 and Patent Document 2 dissociates in plasma having a high electron temperature, and forms active species (etchant) having an etching action. The efficiency will be reduced. That is, SiCl 4 gas was unsuitable as a plasma CVD raw material.
- Patent Document 3 it is described that SiCl 4 gas can be used as “an inorganic Si-based gas not containing H”, but the gas used for forming the SiN film in the examples is SiF 4 , and SiCl No practical verification has been made regarding the formation of a film by the plasma CVD method using four gases as raw materials, and there is no speculation.
- Patent Document 3 does not disclose any specifics about the contents of the high-density plasma, and therefore provides a solution for how to solve the above-described etchant generation problem when SiCl 4 gas is used. Not done.
- the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for forming a silicon oxynitride film having an extremely small amount of hydrogen contained in the film and a high insulating property with a high quality by a plasma CVD method. Is to provide.
- the silicon oxynitride film forming method of the present invention is a plasma CVD apparatus that forms a film by introducing a microwave into a processing vessel by means of a planar antenna having a plurality of holes, and is processed by the plasma CVD method.
- a silicon nitride oxide film forming method for forming a silicon nitride oxide film on a body The pressure in the processing vessel is set within a range of 0.1 Pa to 6.7 Pa, and plasma CVD is performed using a processing gas containing a compound gas composed of silicon atoms and chlorine atoms, nitrogen gas, and oxygen gas.
- SIMS secondary ion mass spectrometry
- the silicon nitride oxide film does not detect an N—H bond peak by measurement with a Fourier transform infrared spectrophotometer (FT-IR).
- FT-IR Fourier transform infrared spectrophotometer
- the compound composed of silicon atoms and chlorine atoms is silicon tetrachloride (SiCl 4 ).
- the flow rate ratio of the compound gas composed of silicon atoms and chlorine atoms with respect to the total processing gas is in the range of 0.06% to 2%.
- the flow rate ratio of the nitrogen gas to the total processing gas is in a range of 32% or more and 99.8% or less.
- the flow rate ratio of the oxygen gas to the total processing gas is in a range of 0.1% to 10%.
- the silicon nitride oxide film according to the present invention is formed by any one of the above methods for forming a silicon nitride oxide film.
- a computer-readable storage medium is a computer-readable storage medium storing a control program that runs on a computer, When the control program is executed, In a plasma CVD apparatus for forming a film by introducing a microwave into a processing container using a planar antenna having a plurality of holes, the pressure in the processing container is within a range of 0.1 Pa to 6.7 Pa.
- SIMS secondary ion mass spectrometry
- the computer controls the plasma CVD apparatus so that plasma CVD is performed to form a silicon nitride oxide film having a hydrogen atom concentration of 9.9 ⁇ 10 20 atoms / cm 3 or less.
- a plasma CVD apparatus is a plasma CVD apparatus for forming a silicon nitride oxide film on an object to be processed by a plasma CVD method,
- a processing container having an opening in the upper part for accommodating the object to be processed;
- a dielectric member that closes the opening of the processing container;
- a planar antenna provided on the dielectric member and having a plurality of holes for introducing microwaves into the processing vessel;
- a gas introduction unit connected to a gas supply mechanism for supplying a processing gas into the processing container;
- An exhaust mechanism for evacuating the inside of the processing vessel;
- the pressure is set in the range of 0.1 Pa to 6.7 Pa, and the gas of the compound composed of silicon atoms and chlorine atoms, nitrogen gas, and oxygen gas is connected from the gas inlet connected to the gas supply mechanism.
- the concentration of hydrogen atoms in the film measured by secondary ion mass spectrometry is 9.9 ⁇ 10 20 atoms / cm 3 or less by supplying a processing gas containing And a control unit that controls the plasma CVD to form the silicon nitride oxide film.
- the amount of hydrogen contained in the film is extremely small.
- a high-quality silicon nitride oxide film with high insulation can be formed by a plasma CVD method.
- the silicon nitride oxide film obtained by the method of the present invention does not cause an adverse effect on the device due to hydrogen and is excellent in insulation, so that high reliability can be imparted when used in the device. Therefore, the method of the present invention has a high utility value when manufacturing a silicon nitride oxide film used for a gate insulating film or the like.
- FIG. 1 is a schematic sectional view showing an example of a plasma CVD apparatus suitable for forming a silicon nitride oxide film.
- FIG. 2 is a drawing showing the structure of a planar antenna.
- FIG. 3 is an explanatory diagram showing the configuration of the control unit.
- FIG. 4 is a drawing showing a process example of a method for forming a silicon nitride oxide film of the present invention.
- FIG. 5 is a graph showing the results of measuring the concentration of Si, N, and O in the silicon nitride oxide film by XPS.
- FIG. 6 is a graph showing the measurement results of the gate leakage current of a MOS transistor fabricated using a silicon nitride oxide film.
- FIG. 7 is an explanatory diagram showing a schematic configuration of a MOS type semiconductor memory device to which the method of the present invention can be applied.
- FIG. 1 is a cross-sectional view schematically showing a schematic configuration of a plasma CVD apparatus 100 that can be used in the method for forming a silicon nitride oxide film of the present invention.
- the plasma CVD apparatus 100 generates plasma by introducing microwaves into a processing container using a planar antenna having a plurality of slot-shaped holes, particularly a RLSA (Radial Line Slot Antenna). It is configured as an RLSA microwave plasma processing apparatus that can generate microwave-excited plasma having a density and a low electron temperature.
- RLSA Random Line Slot Antenna
- the plasma CVD apparatus 100 treatment with plasma having a plasma density of 1 ⁇ 10 10 to 5 ⁇ 10 12 / cm 3 and a low electron temperature of 0.7 to 2 eV is possible. Therefore, the plasma CVD apparatus 100 can be suitably used for the purpose of forming a silicon nitride oxide film by plasma CVD in the manufacturing process of various semiconductor devices.
- the plasma CVD apparatus 100 includes, as main components, an airtight processing vessel 1 and a gas introduction unit 14 connected to a gas supply mechanism 18 that supplies gas into the processing vessel 1 via a gas introduction pipe 22a, 15, an exhaust device 24 as an exhaust mechanism for evacuating the inside of the processing container 1, a microwave introducing mechanism 27 that is provided above the processing container 1 and introduces microwaves into the processing container 1, and these plasmas And a control unit 50 that controls each component of the CVD apparatus 100.
- the gas supply mechanism 18 is integrated into the plasma CVD apparatus 100, but it is not always necessary to integrate it integrally. Of course, the gas supply mechanism 18 may be externally attached to the plasma CVD apparatus 100.
- the processing container 1 is formed of a grounded substantially cylindrical container. Note that the processing container 1 may be formed of a rectangular tube-shaped container.
- the processing container 1 has a bottom wall 1a and a side wall 1b made of a material such as aluminum.
- a processing table 1 is provided with a mounting table 2 for horizontally supporting a silicon wafer (hereinafter simply referred to as a “wafer”) W as an object to be processed.
- the mounting table 2 is made of a material having high thermal conductivity, such as ceramics such as AlN.
- the mounting table 2 is supported by a cylindrical support member 3 extending upward from the center of the bottom of the exhaust chamber 11.
- the support member 3 is made of ceramics such as AlN, for example.
- the mounting table 2 is provided with a cover ring 4 that covers the outer edge portion thereof and guides the wafer W.
- the cover ring 4 is an annular member made of a material such as quartz, AlN, Al 2 O 3 , or SiN.
- a resistance heating type heater 5 as a temperature adjusting mechanism is embedded in the mounting table 2.
- the heater 5 is heated by the heater power supply 5a to heat the mounting table 2 and uniformly heats the wafer W, which is a substrate to be processed, with the heat.
- the mounting table 2 is provided with a thermocouple (TC) 6.
- TC thermocouple
- the heating temperature of the wafer W can be controlled in a range from room temperature to 900 ° C., for example.
- the mounting table 2 has wafer support pins (not shown) for supporting the wafer W and moving it up and down.
- Each wafer support pin is provided so as to protrude and retract with respect to the surface of the mounting table 2.
- a circular opening 10 is formed at a substantially central portion of the bottom wall 1a of the processing container 1.
- An exhaust chamber 11 that communicates with the opening 10 and projects downward is provided on the bottom wall 1a.
- An exhaust pipe 12 is connected to the exhaust chamber 11 and is connected to an exhaust device 24 via the exhaust pipe 12.
- a metal plate 13 having a function as a lid (lid) for opening and closing the processing container 1 is disposed at the upper end of the side wall 1b forming the processing container 1.
- An opening is formed in the plate 13, and an inner peripheral lower portion thereof protrudes toward the inner side (inside the processing container 1 space) to form an annular support portion 13 a.
- the plate 13 is provided with a gas introduction part 40, and the gas introduction part 40 is provided with an annular gas introduction part 14 having a first gas introduction hole.
- An annular gas introduction part 15 having a second gas introduction hole is provided on the side wall 1b of the processing container 1. That is, the gas introduction parts 14 and 15 are provided in two upper and lower stages. Each gas introduction part 14 and 15 is connected to the gas supply mechanism 18 which supplies process gas and the gas for plasma excitation.
- the gas introduction parts 14 and 15 may be provided in a nozzle shape or a shower head shape. Further, the gas introduction part 14 and the gas introduction part 15 may be provided in a single shower head.
- a loading / unloading port 16 for loading / unloading the wafer W between the plasma CVD apparatus 100 and a transfer chamber (not shown) adjacent to the plasma CVD apparatus 100 is provided on the side wall 1b of the processing container 1.
- a gate valve 17 for opening and closing 16 is provided.
- the gas supply mechanism 18 includes, for example, a nitrogen gas (N 2 ) supply source 19a, an oxygen-containing gas (O-containing gas) supply source 19b, a silicon-containing gas (Si-containing gas) supply source 19c, an inert gas supply source 19d, and a cleaning gas.
- a supply source 19e is provided.
- the nitrogen gas (N 2 ) supply source 19 a and the oxygen-containing gas supply source 19 b are connected to the upper gas introduction unit 14.
- the silicon-containing gas supply source 19c, the inert gas supply source 19d, and the cleaning gas supply source 19e are connected to the lower gas introduction section 15.
- the cleaning gas supply source 19e is used when an unnecessary film attached in the processing container 1 is cleaned.
- the gas supply mechanism 18 may have a purge gas supply source used when replacing the atmosphere in the processing container 1 as a gas supply source (not shown) other than the above, for example.
- nitrogen gas (N 2 ) is used.
- Nitrogen gas (N 2 ) can be preferably used in the present invention because it does not contain hydrogen in its molecule.
- a gas (Si n Cl 2n + 2 ) composed of Si atoms and Cl atoms such as tetrachlorosilane (SiCl 4 ) or hexachlorodisilane (Si 2 Cl 6 ) is used.
- SiCl 4 , Si 2 Cl 6 and Si 3 Cl 8 can be preferably used in the present invention because they do not contain hydrogen in the molecule.
- oxygen-containing gas for example, O 2 , NO, N 2 O, or the like can be used.
- a rare gas can be used as the inert gas.
- the rare gas is useful for generating stable plasma as a plasma excitation gas.
- Ar gas, Kr gas, Xe gas, and He gas can be added and used.
- the rare gas can be used as a carrier gas for supplying a Si-containing gas such as SiCl 4 .
- Nitrogen gas (N 2 ) or oxygen-containing gas reaches the gas inlet 14 from the nitrogen gas (N 2 ) supply source 19a or the oxygen-containing gas supply source 19b of the gas supply mechanism 18 through the gas lines 20a and 20b,
- the gas is introduced into the processing container 1 from a gas introduction hole (not shown) of the gas introduction part 14.
- the silicon-containing gas, the inert gas, and the cleaning gas reach the gas introduction unit 15 from the silicon-containing gas supply source 19c, the inert gas supply source 19d, and the cleaning gas supply source 19e through the gas lines 20c to 20e, respectively.
- the gas is introduced into the processing container 1 from a gas introduction hole (not shown) of the gas introduction part 15.
- Each gas line 20a to 20e connected to each gas supply source is provided with mass flow controllers 21a to 21e and front and rear opening / closing valves 22a to 22e.
- the supplied gas can be switched and the flow rate can be controlled.
- a rare gas for plasma excitation such as Ar is an arbitrary gas and is not necessarily supplied simultaneously with the processing gas, but is preferably added from the viewpoint of stabilizing the plasma.
- the exhaust device 24 as an exhaust mechanism includes a high-speed vacuum pump such as a turbo molecular pump. As described above, the exhaust device 24 is connected to the exhaust chamber 11 of the processing container 1 through the exhaust pipe 12. By operating the exhaust device 24, the gas in the processing container 1 uniformly flows into the space 11a of the exhaust chamber 11, and is further exhausted to the outside through the exhaust pipe 12 from the space 11a. Thereby, the inside of the processing container 1 can be depressurized at a high speed, for example, to 0.133 Pa.
- the microwave introduction mechanism 27 includes a transmission plate 28, a planar antenna 31, a slow wave material 33, a conductive cover member 34, a waveguide 37, and a microwave generator 39 as main components.
- the transmission plate 28 that transmits microwaves is provided on a support portion 13 a that protrudes toward the inner periphery of the plate 13.
- the transmission plate 28 is made of a dielectric, for example, ceramics such as quartz, Al 2 O 3 , and AlN.
- a gap between the transmission plate 28 and the support portion 13a is hermetically sealed through a seal member 29. Therefore, the inside of the processing container 1 is kept airtight.
- the planar antenna 31 is provided above the transmission plate 28 so as to face the mounting table 2.
- the planar antenna 31 has a disk shape.
- the shape of the planar antenna 31 is not limited to a disk shape, and may be a square plate shape, for example.
- the planar antenna 31 is locked to the upper end of the plate 13.
- the planar antenna 31 is made of, for example, a copper plate, a nickel plate, a SUS plate or an aluminum plate whose surface is plated with gold or silver.
- the planar antenna 31 has a number of slot-shaped microwave radiation holes 32 that radiate microwaves.
- the microwave radiation holes 32 are formed through the planar antenna 31 in a predetermined pattern.
- each microwave radiation hole 32 has an elongated rectangular shape (slot shape), and two adjacent microwave radiation holes form a pair.
- the adjacent microwave radiation holes 32 are typically arranged in a “T” shape, an “L” shape, or a “V” shape, for example.
- the microwave radiation holes 32 arranged in combination in a predetermined shape for example, T shape
- the length and arrangement interval of the microwave radiation holes 32 are determined according to the wavelength ( ⁇ g) of the microwave.
- the interval between the microwave radiation holes 32 is arranged to be ⁇ g / 4 to ⁇ g.
- the interval between adjacent microwave radiation holes 32 formed concentrically is indicated by ⁇ r.
- the microwave radiation hole 32 may have another shape such as a circular shape or an arc shape.
- the arrangement form of the microwave radiation holes 32 is not particularly limited, and may be arranged in a spiral shape, a radial shape, or the like in addition to a concentric shape.
- a slow wave material 33 having a dielectric constant larger than that of a vacuum is provided on the upper surface of the planar antenna 31.
- the slow wave material 33 has a function of adjusting the plasma by shortening the wavelength of the microwave because the wavelength of the microwave becomes longer in vacuum.
- planar antenna 31 and the transmission plate 28 and the slow wave member 33 and the planar antenna 31 may be brought into contact with or separated from each other, but are preferably brought into contact with each other.
- a conductive cover member 34 is provided on the upper portion of the processing container 1 so as to cover the planar antenna 31 and the slow wave material 33.
- the conductive cover member 34 is made of a metal material such as aluminum or stainless steel.
- the upper end of the plate 13 and the conductive cover member 34 are sealed by a seal member 35.
- a cooling water channel 34 a is formed inside the conductive cover member 34. By allowing cooling water to flow through the cooling water channel 34a, the conductive cover member 34, the slow wave member 33, the planar antenna 31 and the transmission plate 28 can be cooled.
- the conductive cover member 34 is grounded.
- An opening 36 is formed at the center of the upper wall (ceiling) of the conductive cover member 34, and a waveguide 37 is connected to the opening 36.
- the other end of the waveguide 37 is connected to a microwave generator 39 that generates a microwave via a matching circuit 38.
- the waveguide 37 extends in the horizontal direction connected to the coaxial waveguide 37a having a circular cross section extending upward from the opening 36 of the conductive cover member 34 and the upper end of the coaxial waveguide 37a. And a rectangular waveguide 37b.
- An inner conductor 41 extends in the center of the coaxial waveguide 37a.
- the inner conductor 41 is connected and fixed to the center of the planar antenna 31 at its lower end. With such a structure, the microwave is efficiently and uniformly propagated radially and uniformly to the planar antenna 31 via the inner conductor 41 of the coaxial waveguide 37a.
- the microwave generated by the microwave generator 39 is propagated to the planar antenna 31 via the waveguide 37 and further into the processing container 1 via the transmission plate 28.
- the microwave frequency for example, 2.45 GHz is preferably used, and 8.35 GHz, 1.98 GHz, or the like can be used.
- the control unit 50 includes a computer, and includes, for example, a process controller 51 including a CPU, a user interface 52 connected to the process controller 51, and a storage unit 53 as illustrated in FIG.
- the process controller 51 is a component related to process conditions such as temperature, pressure, gas flow rate, and microwave output (for example, the heater power supply 5a, the gas supply mechanism 18, the exhaust device 24, the microwave). This is a control means for controlling the generator 39 and the like in an integrated manner.
- the user interface 52 includes a keyboard on which a process administrator manages command input to manage the plasma CVD apparatus 100, a display that visualizes and displays the operating status of the plasma CVD apparatus 100, and the like.
- the storage unit 53 stores a recipe in which a control program (software) for realizing various processes executed by the plasma CVD apparatus 100 under the control of the process controller 51 and processing condition data are recorded. Yes.
- an arbitrary recipe is called from the storage unit 53 by an instruction from the user interface 52 and is executed by the process controller 51, so that the processing container 1 of the plasma CVD apparatus 100 is controlled under the control of the process controller 51.
- the recipes such as the control program and processing condition data may be stored in a computer-readable storage medium such as a CD-ROM, a hard disk, a flexible disk, a flash memory, a DVD, or a Blu-ray disk. Alternatively, it may be transmitted from other devices as needed via, for example, a dedicated line and used online.
- a silicon nitride oxide film deposition process by a plasma CVD method using the RLSA type plasma CVD apparatus 100 will be described.
- the gate valve 17 is opened, and the wafer W is loaded into the processing container 1 from the loading / unloading port 16 and mounted on the mounting table 2.
- Nitrogen gas (N 2 ) ), oxygen-containing gas, Si-containing gas and, if necessary, an inert gas are introduced into the processing vessel 1 through the gas introduction parts 14 and 15 at a predetermined flow rate, respectively.
- the inside of the processing container 1 is set to a predetermined pressure. The conditions at this time will be described later.
- a microwave having a predetermined frequency, for example, 2.45 GHz, generated by the microwave generator 39 is guided to the waveguide 37 through the matching circuit 38.
- the microwave guided to the waveguide 37 sequentially passes through the rectangular waveguide 37 b and the coaxial waveguide 37 a and is supplied to the planar antenna 31 through the inner conductor 41.
- the microwaves propagate radially from the coaxial waveguide 37 a toward the planar antenna 31.
- the microwave is radiated from the slot-shaped microwave radiation hole 32 of the planar antenna 31 to the space above the wafer W in the processing chamber 1 through the transmission plate 28.
- An electromagnetic field is formed in the processing container 1 by the microwave transmitted through the transmission plate 28 from the planar antenna 31 and radiated to the processing container 1, and only Si and Cl such as nitrogen gas (N 2 ) and SiCl 4 gas are used.
- the contained gas and the oxygen-containing gas are turned into plasma.
- the dissociation of the source gas efficiently proceeds in the plasma, and a silicon nitride oxide (SiON) thin film is deposited by the reaction of active species such as SiCl 3 , SiCl 2 , SiCl, Si, O, and N.
- the silicon nitride oxide film attached to the chamber is supplied with ClF 3 gas as a cleaning gas into the chamber and heated at 100 to 500 ° C., preferably 200 to 300 ° C. Is removed by cleaning.
- ClF 3 gas as a cleaning gas into the chamber and heated at 100 to 500 ° C., preferably 200 to 300 ° C. Is removed by cleaning.
- NF 3 is used as the cleaning gas, plasma is generated at room temperature to 300 ° C.
- the above conditions are stored as recipes in the storage unit 53 of the control unit 50. Then, the process controller 51 reads the recipe and sends a control signal to each component of the plasma CVD apparatus 100 such as the heater power source 5a, the gas supply mechanism 18, the exhaust device 24, the microwave generator 39, etc. Plasma CVD processing under conditions is realized.
- FIG. 4 is a process diagram showing a silicon nitride oxide film manufacturing process performed in the plasma CVD apparatus 100.
- a plasma CVD process is performed on an arbitrary underlying layer (for example, Si substrate) 60 using a plasma CVD apparatus 100.
- This plasma CVD process is performed under the following conditions using a process gas containing SiCl 4 gas, nitrogen gas (N 2 ) as a gas containing only Si and Cl, and O 2 gas as an oxygen-containing gas.
- the treatment pressure is set in the range of 0.1 Pa to 6.7 Pa, preferably in the range of 0.1 Pa to 4 Pa.
- the lower the processing pressure the better.
- the lower limit value of 0.1 Pa in the above range is a value set based on restrictions on the apparatus (limit of high vacuum). When the processing pressure exceeds 6.7 Pa, dissociation of the SiCl 4 gas does not proceed and sufficient film formation cannot be performed.
- the flow rate ratio of the silicon-containing gas to the total gas flow rate is preferably 0.06% or more and 2% or less.
- the flow rate of the silicon-containing gas is preferably set to 0.5 mL / min (sccm) or more and 2 mL / min (sccm) or less.
- the ratio of the nitrogen gas (N 2 ) flow rate to the total gas flow rate is preferably 32% or more and 99.8% or less.
- the flow rate of nitrogen gas (N 2 ) is 100 mL / min (sccm) or more and 1000 mL / min (sccm) or less, preferably 300 mL / min (sccm) or more and 1000 mL / min (sccm) or less, and 300 mL / min (sccm) or more. More preferably, it is set to 600 mL / min (sccm) or less.
- the ratio of the oxygen-containing gas flow rate to the total gas flow rate is preferably 0.1% or more and 10% or less, and is 0.2% or more and 5% or less. Is more preferable.
- the flow rate of the oxygen-containing gas is preferably 1 mL / min (sccm) or more and 10 mL / min (sccm) or less, more preferably 2 mL / min (sccm) or more and 10 mL / min (sccm) or less.
- the inert gas when adding the inert gas, it is preferable to supply it at a nitrogen gas flow rate or less. It is preferable that the flow ratio of the inert gas (for example, Ar gas / total gas flow) is 0% or more and 66% or less with respect to the total gas flow.
- the flow rate of the inert gas is preferably set to 0 mL / min (sccm) or more and 200 mL / min (sccm) or less.
- the processing temperature of the plasma CVD processing is more preferably set to a temperature of the mounting table 2 within a range of 300 ° C. or higher, preferably 400 ° C. or higher and 600 ° C. or lower, and 400 ° C. or higher and 550 ° C. or lower.
- the microwave output in the plasma CVD apparatus 100 is preferably in the range of 0.25 to 2.56 W / cm 2 as the power density per area of the transmission plate 28. More preferably, it is 0.75 to 2.56 W / cm 2 .
- the microwave output can be selected, for example, within a range of 500 to 5000 W, more preferably within a range of 1500 to 5000 W, and a power density within the above range depending on the purpose.
- a silicon nitride oxide film (SiON film) 70 can be deposited.
- a silicon nitride oxide film can be formed with a film thickness in the range of 2 nm to 50 nm, preferably in the range of 2 nm to 10 nm, for example.
- the silicon nitride oxide film 70 obtained as described above has excellent insulating properties and does not contain hydrogen atoms (H) derived from the film forming raw material. That is, the silicon nitride oxide film 70 is an insulating film having an extremely low hydrogen content. Therefore, adverse effects (for example, NBTI, etc.) on the device due to hydrogen can be prevented, and the reliability of the device can be improved. For this reason, the silicon nitride oxide film 70 formed by the method of the present invention can be preferably used for applications requiring high reliability such as a gate insulating film (tunnel insulating film) of a semiconductor memory device.
- a gate insulating film tunneling film
- a nitrogen-containing gas, a compound gas composed of silicon atoms and chlorine atoms (Si-containing gas), and an oxygen-containing gas are used as film forming materials.
- Si-containing gas a compound gas composed of silicon atoms and chlorine atoms
- an oxygen-containing gas are used as film forming materials.
- a silicon nitride oxide film with an extremely small amount of hydrogen atoms (H) can be formed. It is considered that the SiCl 4 gas used in the present invention undergoes a dissociation reaction in steps of the following steps i) to iv) in plasma.
- the dissociation reaction shown in i) to iv) is easy to proceed due to the high energy of the plasma, and the SiCl 4 molecules are scattered and highly dissociated. It is easy to be in a state. Therefore, a large amount of etchants such as Cl ions, which are active species having an etching action, are generated from SiCl 4 molecules, the etching becomes dominant, and the silicon nitride oxide film cannot be deposited. For this reason, SiCl 4 gas has not been used as a film forming material for plasma CVD performed on an industrial scale.
- the plasma CVD apparatus 100 used in the method of the present invention has a low electron temperature by a configuration in which a plasma is generated by introducing a microwave into the processing container 1 by a planar antenna 31 having a plurality of slots (microwave radiation holes 32). Plasma can be formed. Therefore, by using the plasma CVD apparatus 100 and controlling the processing pressure and the flow rate of the processing gas within the above ranges, even if SiCl 4 gas is used as a film forming raw material, the plasma energy is low, so the dissociation is SiCl 3 , The ratio of staying in SiCl 2 is large, a low dissociation state is maintained, and film formation becomes dominant.
- the dissociation of SiCl 4 molecules is suppressed up to the stage i) or ii) by the low electron temperature / low energy plasma, thereby suppressing the formation of the etchant (Cl ions, etc.) that adversely affects the film formation. Therefore, the film formation becomes dominant.
- the plasma according to the method of the present invention has a low electron temperature and a high electron density, it is easy to dissociate SiCl 4 gas, a large amount of SiCl 3 ions are generated, and nitrogen gas (N 2 ) is also dissociated in the high concentration plasma to become N ions. Then, it is considered that SiON is generated by reacting SiCl 3 ions and N ions in an atmosphere containing activated oxygen. Therefore, a silicon nitride oxide film can be formed by using nitrogen gas (N 2 ). Therefore, it has become possible to form a high-quality silicon nitride oxide film with little damage in ions and extremely low hydrogen content using plasma CVD using SiCl 4 gas as a raw material.
- the plasma CVD apparatus 100 has a feature that it is easy to control the deposition rate (film formation rate) of the silicon nitride oxide film because the processing gas is gradually dissociated by mild plasma having a low electron temperature. Therefore, for example, film formation can be performed while controlling the film thickness from a thin film of about several nm to a relatively thick film of about several tens of nm.
- a polysilicon layer having a thickness of 150 nm is formed on the formed silicon nitride oxide film, patterning is performed using a photolithography technique, a polysilicon electrode is formed, and a MOS structure transistor is manufactured.
- the gate leakage current was measured for the MOS structure transistor using the silicon nitride oxide film as the gate insulating film according to a conventional method.
- WVG silicon dioxide film formed by LPCVD and thermal oxidation under the following conditions
- WVG a method of generating and supplying water vapor by burning O 2 and H 2 using a water vapor generator
- Processing temperature (mounting table): 400 ° C
- Microwave power 3 kW (power density 1.53 W / cm 2 ; per transmission plate area)
- Processing pressure 2.7 Pa SiCl 4 flow rate; 1 mL / min (sccm)
- N 2 gas flow rate 450 mL / min (sccm)
- Ar gas flow rate 40 mL / min (sccm)
- FIG. 5 is a graph showing the results of measuring the concentrations of Si atoms, O atoms, and N atoms in the SiON film by XPS analysis, and examining the correlation with the O 2 flow rate in plasma CVD on the horizontal axis.
- FIG. 5 shows that the N concentration decreases in inverse proportion as the O 2 flow rate in plasma CVD is increased.
- the obtained SiON film had a hydrogen atom concentration of 9.9 ⁇ 10 20 atoms / cm 3 or less as measured by secondary ion mass spectrometry (RBS-SIMS). Further, in this SiON film, the peak of the N—H bond is not detected by measurement with a Fourier transform infrared spectrophotometer (FT-IR), and the N—H bond is at a level below the detection lower limit in the film. confirmed.
- FT-IR Fourier transform infrared spectrophotometer
- the silicon nitride oxide film formed by the method of the present invention has a larger gate leakage current on the low electric field side than the SiO 2 film by LPCVD or thermal oxidation, but on the high electric field side, LPCVD or thermal It was difficult to break down as compared with the oxidized SiO 2 film, and it was shown that the gate leakage current was small. From this result, it was confirmed that the silicon nitride oxide film formed by the method of the present invention was superior to the SiO 2 film formed by the LPCVD method or the thermal oxidation method in terms of insulation and durability.
- FIG. 6 shows that in the silicon nitride oxide film (curves ac in FIG. 6) formed by the method of the present invention, the gate leakage current decreases as the nitrogen concentration in the film decreases. Therefore, in order to improve the electrical characteristics (gate leakage current suppression) of the silicon nitride oxide film, the ratio of the oxygen-containing gas flow rate to the total gas flow rate (for example, O 2 gas / total gas flow rate) in plasma CVD. It was confirmed that the percentage is preferably 0.1% to 10%, more preferably 0.2% to 5%.
- a deposition gas containing SiCl 4 gas, nitrogen gas (N 2 ), O 2 gas, and Ar gas is used, and SiCl 4 gas or nitrogen gas (
- N 2 ), O 2 gas, etc. By performing plasma CVD by selecting the flow rate ratio and processing pressure of N 2 ), O 2 gas, etc., a silicon nitride oxide film with high quality and extremely few hydrogen atoms contained in the film is manufactured on the wafer W. it can.
- the silicon nitride oxide film thus formed can be advantageously used as, for example, a gate insulating film of a MOS type semiconductor memory device.
- the method of the present invention can be applied to the formation of a silicon nitride oxide film as a gate insulating film of a MOS type semiconductor memory device, for example. As a result, a MOS semiconductor memory device having a small gate leakage current and excellent electrical characteristics can be manufactured.
- FIG. 7 is a cross-sectional view showing a schematic configuration of the MOS type semiconductor memory device 201.
- the MOS type semiconductor memory device 201 includes a p-type silicon substrate 101 as a semiconductor layer, a plurality of insulating films stacked on the p-type silicon substrate 101, and a gate electrode 103 formed thereon. ,have.
- a first insulating film 111, a second insulating film 112, a third insulating film 113, a fourth insulating film 114, and a fifth insulating film are provided.
- the second insulating film 112, the third insulating film 113, and the fourth insulating film 114 are all silicon nitride films, and form a silicon nitride film stack 102a.
- a first source / drain 104 and a second source / drain 105 which are n-type diffusion layers are formed on the silicon substrate 101 at a predetermined depth from the surface so as to be located on both sides of the gate electrode 103.
- a channel forming region 106 is formed between the two.
- the MOS semiconductor memory device 201 may be formed in a p-well or p-type silicon layer formed in a semiconductor substrate. Although this embodiment will be described taking an n-channel MOS device as an example, it may be implemented with a p-channel MOS device. Accordingly, the contents of the present embodiment described below can be applied to all n-channel MOS devices and p-channel MOS devices.
- the first insulating film 111 is a gate insulating film (tunnel insulating film), and the hydrogen concentration in the film formed by the plasma CVD apparatus 100 on the surface of the silicon substrate 101 is 9.9 ⁇ 10 20 atoms / cm 3 or less. And extremely few silicon nitride oxide films (SiON films).
- the film thickness of the first insulating film 111 is preferably in the range of 2 nm to 10 nm, for example, and more preferably in the range of 4 nm to 7 nm.
- the second insulating film 112 constituting the silicon nitride film stack 102a is a silicon nitride film (SiN film; the composition ratio of Si and N is not necessarily stoichiometrically formed on the first insulating film 111. However, the value varies depending on the film forming conditions.
- the film thickness of the second insulating film 112 is preferably in the range of 2 nm to 20 nm, for example, and more preferably in the range of 3 nm to 5 nm.
- the third insulating film 113 is a silicon nitride film (SiN film) formed on the second insulating film 112.
- the film thickness of the third insulating film 113 is preferably in the range of 2 nm to 30 nm, for example, and more preferably in the range of 4 nm to 10 nm.
- the fourth insulating film 114 is a silicon nitride film (SiN film) formed on the third insulating film 113.
- the fourth insulating film 114 has a film thickness similar to that of the second insulating film 112, for example.
- the fifth insulating film 115 is a silicon dioxide film (SiO 2 film) deposited on the fourth insulating film 114 by, for example, a CVD method.
- the fifth insulating film 115 functions as a block layer (barrier layer) between the electrode 103 and the fourth insulating film 114.
- the film thickness of the fifth insulating film 115 is preferably in the range of 2 nm to 30 nm, for example, and more preferably in the range of 5 nm to 8 nm.
- the gate electrode 103 is made of, for example, a polycrystalline silicon film formed by a CVD method, and functions as a control gate (CG) electrode. Further, the gate electrode 103 may be a film containing a metal such as W, Ti, Ta, Cu, Al, Au, or Pt.
- the gate electrode 103 is not limited to a single layer, and for the purpose of reducing the specific resistance of the gate electrode 103 and increasing the operation speed of the MOS type semiconductor memory device 201, for example, tungsten, molybdenum, tantalum, titanium, platinum, silicide thereof, A laminated structure including a nitride, an alloy, or the like can also be used.
- the gate electrode 103 is connected to a wiring layer (not shown).
- the silicon nitride film stacked body 102a constituted by the second insulating film 112, the third insulating film 113, and the fourth insulating film 114 mainly stores charges. It is an area.
- a silicon substrate 101 on which an element isolation film (not shown) is formed by a technique such as a LOCOS (Local Oxidation of Silicon) method or an STI (Shallow Trench Isolation) method is prepared.
- a SiON film is formed as the insulating film 111. That is, in the plasma CVD apparatus 100, SiCl 4 , N 2 , O 2, and Ar are used as process gases, plasma CVD is performed with the above pressure and gas flow ratio set, and the hydrogen concentration in the film is increased on the silicon substrate 101.
- An extremely small SiON film of 9.9 ⁇ 10 20 atoms / cm 3 or less is deposited.
- the second insulating film 112, the third insulating film 113, and the fourth insulating film 114 are sequentially formed on the first insulating film 111 by, for example, a plasma CVD method.
- a fifth insulating film 115 is formed on the fourth insulating film 114.
- the fifth insulating film 115 can be formed by, for example, a CVD method. Further, a polysilicon film, a metal layer, a metal silicide layer, or the like is formed on the fifth insulating film 115 by, for example, a CVD method to form a metal film that becomes the gate electrode 103.
- the metal film and the fifth insulating film 115 to the first insulating film 111 are etched using a patterned resist as a mask by using a photolithography technique, so that the patterned gate electrode 103 and the plurality of gate electrodes 103 A gate laminated structure having an insulating film is obtained.
- an n-type impurity is ion-implanted at a high concentration into the silicon surface adjacent to both sides of the gate stacked structure to form the first source / drain 104 and the second source / drain 105.
- the MOS type semiconductor memory device 201 having the structure shown in FIG. 7 can be manufactured.
- the MOS type semiconductor memory device 201 manufactured using the SiON film having an extremely small amount of hydrogen atoms contained in the film as the first insulating film 111 is very reliable and can be driven stably. .
- the silicon nitride film stack 102a has three layers including the second insulating film 112 to the fourth insulating film 114 is described as an example.
- the present invention can also be applied to the manufacture of a MOS semiconductor memory device having a silicon nitride film stack in which two layers or four or more layers are stacked.
- the silicon nitride oxide film formed by the method of the present invention can be preferably used for, for example, a gate insulating film of a transistor in addition to a gate insulating film of a MOS type semiconductor memory device.
- Second source / drain 111 ... 1st insulating film 112 ... 2nd insulating film 113 ... 3rd insulating film 114 ... 4th insulating film 115 ... 5th insulating film 201 ...
- MOS type semiconductor Mori apparatus W semiconductor wafer (substrate)
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Abstract
Description
前記処理容器内の圧力を0.1Pa以上6.7Pa以下の範囲内に設定し、シリコン原子と塩素原子からなる化合物のガスと窒素ガスと酸素ガスとを含む処理ガスを用い、プラズマCVDを行うことにより、二次イオン質量分析(SIMS)によって測定される膜中の水素原子の濃度が、9.9×1020atoms/cm3以下である窒化酸化珪素膜を形成する工程を備えている。
前記制御プログラムは、実行時に、
複数の孔を有する平面アンテナにより処理容器内にマイクロ波を導入してプラズマを生成して成膜を行うプラズマCVD装置において、前記処理容器内の圧力を0.1Pa以上6.7Pa以下の範囲内に設定し、シリコン原子と塩素原子からなる化合物のガスと窒素ガスと酸素ガスとを含む処理ガスを用いてプラズマCVDを行うことにより、二次イオン質量分析(SIMS)によって測定される膜中の水素原子の濃度が、9.9×1020atoms/cm3以下である窒化酸化珪素膜を形成するプラズマCVDが行われるように、コンピュータに前記プラズマCVD装置を制御させるものである。
被処理体を収容する上部に開口を有する処理容器と、
前記処理容器の前記開口を塞ぐ誘電体部材と、
前記誘電体部材上に設けられ、前記処理容器内にマイクロ波を導入するための複数の孔を有する平面アンテナと、
前記処理容器内に処理ガスを供給するガス供給機構に接続するガス導入部と、
前記処理容器内を減圧排気する排気機構と、
前記処理容器内において、圧力を0.1Pa以上6.7Pa以下の範囲内に設定し、前記ガス供給機構に接続するガス導入部からシリコン原子と塩素原子からなる化合物のガスと窒素ガスと酸素ガスとを含む処理ガスを供給してプラズマCVDを行うことにより、二次イオン質量分析(SIMS)によって測定される膜中の水素原子の濃度が、9.9×1020atoms/cm3以下である窒化酸化珪素膜を形成するプラズマCVDが行われるように制御する制御部と、を備えている。
図2は平面アンテナの構造を示す図面である。
図3は制御部の構成を示す説明図である。
図4は本発明の窒化酸化珪素膜の形成方法の工程例を示す図面である。
図5は窒化酸化珪素膜中のSi、N、Oの濃度をXPSで測定した結果を示すグラフ図面である。
図6は窒化酸化珪素膜を使用して作製したMOSトランジスタのゲートリーク電流の測定結果を示すグラフ図面である。
図7は本発明方法を適用可能なMOS型半導体メモリ装置の概略構成を示す説明図である。
以下、本発明の実施の形態について図面を参照して詳細に説明する。図1は、本発明の窒化酸化珪素膜の形成方法に利用可能なプラズマCVD装置100の概略構成を模式的に示す断面図である。
本発明の窒化酸化珪素膜の形成方法では、成膜原料として窒素含有ガスと、シリコン原子と塩素原子からなる化合物のガス(Si含有ガス)と、酸素含有ガスを用いることによって、膜中に含まれる水素原子(H)の量が極端に少ない窒化酸化珪素膜を形成することができる。本発明で使用するSiCl4ガスは、プラズマ中では、以下のi)~iv)に示す段階を踏んで解離反応が進行するものと考えられている。
i)SiCl4→SiCl3+Cl
ii)SiCl3→SiCl2+Cl+Cl
iii)SiCl2→SiCl+Cl+Cl+Cl
iv)SiCl→Si+Cl+Cl+Cl+Cl
[ここで、Clはイオンを意味する]
処理温度(載置台):400℃
マイクロ波パワー:3kW(パワー密度1.53W/cm2;透過板面積あたり)
処理圧力;2.7Pa
SiCl4流量;1mL/min(sccm)
N2ガス流量;450mL/min(sccm)
O2ガス流量;0(添加せず)、1、2、3、4、5および6mL/min(sccm)で変化させた。
Arガス流量;40mL/min(sccm)
処理温度:780℃
処理圧力;133Pa
SiH2Cl2ガス+NH3ガス;100+1000mL/min(sccm)
処理温度:950℃
処理圧力;40kPa
水蒸気;O2/H2流量=900/450mL/min(sccm)
次に、図7を参照しながら、本実施の形態に係る窒化酸化珪素膜の形成方法を半導体メモリ装置の製造過程に適用した例について説明する。図7は、MOS型半導体メモリ装置201の概略構成を示す断面図である。MOS型半導体メモリ装置201は、半導体層としてのp型のシリコン基板101と、このp型のシリコン基板101上に積層形成された複数の絶縁膜と、さらにその上に形成されたゲート電極103と、を有している。シリコン基板101とゲート電極103との間には、第1の絶縁膜111と、第2の絶縁膜112と、第3の絶縁膜113と、第4の絶縁膜114と、第5の絶縁膜115とが設けられている。このうち、第2の絶縁膜112、第3の絶縁膜113および第4の絶縁膜114は、いずれも窒化珪素膜であり、窒化珪素膜積層体102aを形成している。
2…載置台
3…支持部材
5…ヒータ
12…排気管
14,15…ガス導入部
16…搬入出口
17…ゲートバルブ
18…ガス供給機構
19a…窒素ガス(N2)供給源
19b…酸素含有ガス供給源
19c…シリコン含有ガス供給源
19d…不活性ガス供給源
24…排気装置
27…マイクロ波導入機構
28…透過板
29…シール部材
31…平面アンテナ
32…マイクロ波放射孔
37…導波管
39…マイクロ波発生装置
50…制御部
100…プラズマCVD装置
101…シリコン基板
102a…窒化珪素膜積層体
103…ゲート電極
104…第1のソース・ドレイン
105…第2のソース・ドレイン
111…第1の絶縁膜
112…第2の絶縁膜
113…第3の絶縁膜
114…第4の絶縁膜
115…第5の絶縁膜
201…MOS型半導体メモリ装置
W…半導体ウエハ(基板)
Claims (9)
- 複数の孔を有する平面アンテナにより処理容器内にマイクロ波を導入してプラズマを生成して成膜を行うプラズマCVD装置において、プラズマCVD法によって被処理体上に窒化酸化珪素膜を形成する窒化酸化珪素膜の形成方法であって、
前記処理容器内の圧力を0.1Pa以上6.7Pa以下の範囲内に設定し、シリコン原子と塩素原子からなる化合物のガスと窒素ガスと酸素ガスとを含む処理ガスを用い、プラズマCVDを行うことにより、二次イオン質量分析(SIMS)によって測定される膜中の水素原子の濃度が、9.9×1020atoms/cm3以下である窒化酸化珪素膜を形成する工程を備えていることを特徴とする窒化酸化珪素膜の形成方法。 - 全処理ガスに対する前記酸素ガスの流量比率が、0.1%以上10%以下の範囲内であることを特徴とする請求項1に記載の窒化酸化珪素膜の形成方法。
- 前記窒化酸化珪素膜は、フーリエ変換赤外分光光度計(FT−IR)による測定でN−H結合のピークが検出されないことを特徴とする請求項1又は2に記載の窒化酸化珪素膜の形成方法。
- 前記シリコン原子と塩素原子からなる化合物が、四塩化珪素(SiCl4)であることを特徴とする請求項1ないし請求項3のいずれか1項に記載の窒化酸化珪素膜の形成方法。
- 全処理ガスに対する前記シリコン原子と塩素原子からなる化合物のガスの流量比率が0.06%以上2%以下の範囲内であることを特徴とする請求項1から請求項4のいずれか1項に記載の窒化酸化珪素膜の形成方法。
- 全処理ガスに対する前記窒素ガスの流量比率が、32%以上99.8%以下の範囲内であることを特徴とする請求項1から請求項5のいずれか1項に記載の窒化酸化珪素膜の形成方法。
- 請求項1から請求項6のいずれか1項に記載の窒化酸化珪素膜の形成方法により形成された窒化酸化珪素膜。
- コンピュータ上で動作する制御プログラムが記憶されたコンピュータ読み取り可能な記憶媒体であって、
前記制御プログラムは、実行時に、
複数の孔を有する平面アンテナにより処理容器内にマイクロ波を導入してプラズマを生成して成膜を行うプラズマCVD装置において、前記処理容器内の圧力を0.1Pa以上6.7Pa以下の範囲内に設定し、シリコン原子と塩素原子からなる化合物のガスと窒素ガスと酸素ガスとを含む処理ガスを用いてプラズマCVDを行うことにより、二次イオン質量分析(SIMS)によって測定される膜中の水素原子の濃度が、9.9×1020atoms/cm3以下である窒化酸化珪素膜を形成するプラズマCVDが行われるように、コンピュータに前記プラズマCVD装置を制御させるものであることを特徴とするコンピュータ読み取り可能な記憶媒体。 - プラズマCVD法により被処理体上に窒化酸化珪素膜を形成するプラズマCVD装置であって、
被処理体を収容する上部に開口を有する処理容器と、
前記処理容器の前記開口を塞ぐ誘電体部材と、
前記誘電体部材上に設けられ、前記処理容器内にマイクロ波を導入するための複数の孔を有する平面アンテナと、
前記処理容器内に処理ガスを供給するガス供給機構に接続するガス導入部と、
前記処理容器内を減圧排気する排気機構と、
前記処理容器内において、圧力を0.1Pa以上6.7Pa以下の範囲内に設定し、前記ガス供給機構に接続するガス導入部からシリコン原子と塩素原子からなる化合物のガスと窒素ガスと酸素ガスとを含む処理ガスを供給してプラズマCVDを行うことにより、二次イオン質量分析(SIMS)によって測定される膜中の水素原子の濃度が、9.9×1020atoms/cm3以下である窒化酸化珪素膜を形成するプラズマCVDが行われるように制御する制御部と、
を備えたことを特徴とするプラズマCVD装置。
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JP2006128591A (ja) * | 2004-01-13 | 2006-05-18 | Tokyo Electron Ltd | 半導体装置の製造方法及び成膜システム |
JP2007189173A (ja) * | 2006-01-16 | 2007-07-26 | Tokyo Electron Ltd | 成膜方法、成膜装置及び記憶媒体 |
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US20110189862A1 (en) | 2011-08-04 |
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