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WO2010010706A1 - Resist trimming method and trimming apparatus - Google Patents

Resist trimming method and trimming apparatus Download PDF

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Publication number
WO2010010706A1
WO2010010706A1 PCT/JP2009/003463 JP2009003463W WO2010010706A1 WO 2010010706 A1 WO2010010706 A1 WO 2010010706A1 JP 2009003463 W JP2009003463 W JP 2009003463W WO 2010010706 A1 WO2010010706 A1 WO 2010010706A1
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WO
WIPO (PCT)
Prior art keywords
trimming
plasma
space
resist
resist pattern
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PCT/JP2009/003463
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French (fr)
Japanese (ja)
Inventor
松井尚子
小平吉三
横川直明
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キヤノンアネルバ株式会社
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Publication of WO2010010706A1 publication Critical patent/WO2010010706A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Definitions

  • the present invention relates to a resist trimming method and a trimming apparatus for forming an ultrafine resist pattern below the resolution limit of an exposure apparatus.
  • the pattern size has been miniaturized. Since the speed performance of a semiconductor device is mainly determined by the width dimension of a circuit pattern when the materials are the same, miniaturization has been promoted year by year, and a precise exposure process is required accordingly.
  • the miniaturization capability of the exposure process mainly depends on the wavelength of the exposure light source
  • the development of resist materials sensitive to the wavelength from the I-line to the KrF laser, ArF laser, the shorter wavelength light source and the wavelength has been advanced.
  • the shortening of the wavelength of the light source has not caught up with the progress of miniaturization, and the pattern transfer capability has reached its limit, and it is difficult to perform miniaturization in generations with a gate length of 32 nm or later.
  • a technique called resist trimming in which an etching gas such as oxygen is introduced into a vacuum processing chamber, a plasma discharge is generated under reduced pressure, and plasma processing is performed to narrow the width of the resist pattern. (See Patent Document 1).
  • resist trimming using capacitively coupled plasma as shown in Patent Document 1 has the following problems.
  • the resist etching rate that is, the trimming rate is too high, from several hundred to several thousand nm / min. It is difficult to control the dimensions of several tens to several nanometers.
  • the high-density plasma is directly irradiated onto the substrate, which may cause charge-up damage to the processing substrate.
  • the ion density is high, it is difficult to perform isotropic etching by ion bombardment. For example, if the pattern width is intended, the pattern thickness may become too small.
  • the present invention has been proposed in view of the above-described problems, and an object of the present invention is to provide a resist trimming method and a trimming apparatus capable of controlling dimensions with high accuracy by performing resist trimming at a low trimming speed.
  • the resist trimming method of the present invention includes the following steps in order to achieve the above-described object.
  • the first step is a plasma generation step for generating a reactive gas plasma.
  • the second step is a removal step in which ions and electrons are removed from the generated plasma to selectively extract radicals.
  • the third step is a trimming step for trimming the resist pattern by irradiating the resist pattern with plasma from which ions and electrons have been removed.
  • resist trimming can be performed at a low trimming speed, dimensions can be controlled with high accuracy.
  • FIG. 6 is a diagram illustrating a result of evaluating charge-up damage by measuring the IV characteristics of a MOS capacitor (Example 2 / leakage current). The result figure which evaluated the charge-up damage by the measurement of the IV characteristic of a MOS capacitor (Example 2 / breakdown voltage). The result figure which evaluated the charge-up damage by the measurement of the IV characteristic of a MOS capacitor (comparative example / leakage current).
  • a trimming apparatus includes a plasma generation space in which a high-frequency electrode is disposed, a trimming processing space in which an object to be processed can be disposed, a conductive member, a gas introduction unit, an exhaust unit, and a high-frequency power supply unit. And a controller.
  • the conductive member is disposed between the plasma generation space and the trimming processing space, and has a plurality of through holes for communicating both spaces.
  • the gas introduction means introduces a reaction gas into the plasma generation space.
  • the exhaust means exhausts the plasma generation space and the trimming processing space.
  • the high frequency power supply means supplies power to the high frequency electrode.
  • the controller controls the gas introduction unit, the exhaust unit, and the high frequency power supply unit to introduce the plasma from which ions and electrons have been removed into the trimming process space and trim the resist pattern introduced into the trimming process space.
  • FIG. 1 is a schematic diagram illustrating a configuration of a trimming apparatus according to the present embodiment.
  • a trimming apparatus 100 includes a vacuum container 11 that can keep the inside in a vacuum state.
  • a partition plate 1 made of a conductive member (SUS or aluminum) is provided in a horizontal state.
  • the vacuum vessel 11 is grounded by the partition plate 1 and is divided into a plasma generation chamber 3 that forms a plasma discharge space that functions as a plasma generation space, and a trimming processing chamber 4 that functions as a trimming processing space.
  • the partition plate 1 is formed with a plurality of through holes 5 penetrating the plasma generation chamber 3 and the trimming chamber 4 in the vertical direction, thereby blocking electrons and ions.
  • a trimming gas that is a reactive gas is introduced into the plasma generation chamber 3, and high frequency power (for example, 13.56 MHz) is supplied to the high frequency electrode 2 from the high frequency power supply 21 that functions as a high frequency power supply means, thereby capacitively coupled plasma. Is born.
  • a substrate holding mechanism 6 capable of holding the substrate 12 by an electrostatic adsorption action or the like is disposed.
  • a heater 7 is provided inside the substrate holding mechanism 6, and it is possible to uniformly control the substrate temperature by this heater 7 and keep the trimming distribution uniform. It is possible to obtain a trimming shape with a good in-plane distribution by attaching a heater to the entire interior of the partition plate 1 and the vacuum container 11 to uniformly control the temperature of the entire vacuum container 11.
  • the gas introduction system 8 that functions as a gas introduction means introduces gas from a gas supply source to the plasma generation chamber 3, has a mass flow controller (not shown), and is based on a command from the controller 9.
  • the flow rate introduced into the can be adjusted.
  • Trimming gas introduced from the gas introduction system 8 includes O atom, H atom, N atom as a substance that can convert C, H, O, etc. into a component such as CO2 by reaction with an organic compound as a constituent material of the photoresist.
  • a gas containing the above can be used. Radicals containing O atoms can be suitably used because of their high reactivity. For example, C atoms in a photoresist are converted into components such as carbon dioxide.
  • radicals containing H atoms react with C atoms in the photoresist and are converted into components such as CHX.
  • CHX For example, O2, O3, N2, NH3, H2, NOX, CXHY (X and Y are arbitrary numbers, for example, alkanes such as methane and ethane, alkynes such as ethylene), CXHYOZ (X, Y, and Z are arbitrary)
  • alcohols such as CH 3 OH
  • ketones such as methyl ethyl ketone, isopropyl methyl ketone, and methyl propyl ketone
  • aldehydes carboxylic acids, ethers, and esters
  • plasma serving as a radical generation source is generated in the plasma generation chamber 3.
  • the plasma contains electrons, radicals, and ions, but the electrons and ions are blocked by the partition plate 1 charged by high-frequency discharge, and the radicals are selectively introduced into the trimming chamber 4 through the through-holes 5 to form the substrate 12.
  • oxygen plasma is generated.
  • oxygen radicals pass through the through holes 5 and are separated and introduced into the trimming process chamber 4, and the process substrate 12 is irradiated with oxygen radicals.
  • the oxygen radicals are combined with C atoms in the photoresist to become CO2 or CO, or are combined with H atoms and converted to H2O or the like.
  • the gas flow rate in the through hole 5 of the partition plate 1 is u
  • the substantial length of the through hole 5 is L
  • the mutual gas diffusion coefficient is D, uL / D>
  • the length L of the through hole 5 and the gas flow rate u are set so as to satisfy the condition of 1. Thereby, the reverse diffusion of radicals from the partition plate 1 to the plasma generation chamber 3 is prevented.
  • the diameter size of the through holes 5 and the number of the through holes 5 in the partition plate 1 are also related to the amount of electrons and ions blocked, and are set so that the electron density in the trimming processing chamber 4 is set to a target value.
  • the exhaust system 10 that functions as an exhaust means is configured to include a turbo molecular pump (not shown) and the like, and exhausts the trimming processing chamber 4 at a predetermined exhaust speed based on a command from the controller 9.
  • the controller 9 can control process conditions such as high-frequency power, gas flow rate, process pressure, processing time, and substrate temperature by sending commands to the high-frequency power source 21, the gas introduction system 8, the exhaust system 10, the heater 7, and the like. ing.
  • the process pressure is set to a predetermined value by controlling at least one of the gas introduction system 8 and the exhaust system 10 based on an input from a pressure sensor (not shown).
  • the controller 9 includes a general computer, a driver that can transmit commands to various devices, and the like, and executes trimming processing based on a program.
  • the controller 9 having such a configuration includes a control unit 91, It functions as a timer processing unit 92, a trimming speed information storage unit 93, and an end timing calculation unit 94.
  • the control unit 91 is a functional unit that controls the controller 9 in an integrated manner.
  • the timer processing unit 92 is a functional unit for ending the trimming process when the resist pattern is trimmed to a desired size.
  • the trimming speed information storage unit 93 is a functional unit for storing trimming speed information related to the trimming speed.
  • the end timing calculation unit 94 is a functional unit for determining the end timing of the trimming process based on the trimming speed information.
  • the resist trimming method includes the following three steps as main steps.
  • the first step is a plasma generation step for generating plasma of a reactive gas.
  • the second step is a removal step in which ions and electrons are removed from the generated plasma to selectively extract radicals.
  • the third step is a trimming step for trimming the resist pattern by irradiating the resist pattern with plasma from which ions and electrons have been removed.
  • plasma is generated by introducing a reactive gas into the plasma generation space, supplying high frequency power to the high frequency electrode, and causing high frequency discharge. Then, the generated plasma is introduced into the trimming processing space via a conductive member, so that the plasma from which ions and electrons are removed is irradiated.
  • FIGS. 2A and 2B are explanatory views showing a resist trimming method according to this embodiment.
  • the substrate (the substrate portion is not shown) on which the material to be etched 31 and the resist pattern are stacked is placed in the trimming processing chamber 4 in a state where the inside of the vacuum vessel 11 is maintained at a predetermined degree of vacuum. It is carried in and placed on the substrate holding mechanism 6. Then, a trimming gas is introduced into the plasma generation chamber 3 and high frequency power is applied to the high frequency electrode 2 to generate plasma. Plasma diffuses toward the trimming chamber 4, but ions and electrons are blocked by the partition plate 1, and only radicals of trimming gas molecules are introduced into the trimming chamber 4, and the electron density in the trimming chamber 4 is 1 ⁇ . It is maintained at 10 +7 cm ⁇ 3 or less.
  • the surface of the photoresist 32 When exposed to radicals of trimming gas molecules, the surface of the photoresist 32 is oxidized and converted into gas molecules such as carbon dioxide, and the size of the resist pattern is reduced as shown in FIG. 2B.
  • the power supply to the high-frequency electrode 2 is stopped to end the trimming process. For example, when a predetermined processing time elapses, the processing is terminated assuming that the desired size is reached.
  • the predetermined processing time will be described with reference to FIG. FIG. 3 is a map showing the correspondence between the CD and the trimming time (in this example, the line width of the resist pattern).
  • the predetermined processing time is a controller that maps a map showing the correspondence between the CD and the trimming time, corresponding to each process condition (trimming gas type, process pressure, substrate temperature, etc.) and each resist material. 9 and determine based on this.
  • the processing time ⁇ t required to change from the line width CD 0 before processing to the target line width CD 1 is calculated based on the map, and the processing is terminated when the processing time ⁇ t has elapsed.
  • a predetermined processing time may be calculated based on an approximate expression instead of a map, or appropriate correction may be performed.
  • the electron density is 1 ⁇ 10 +7 cm ⁇ 3 or less, and the resist trimming can be performed at a low trimming speed by trimming the resist pattern using the trimming gas. For this reason, it becomes possible to control the dimensions with high accuracy at a level of several tens nm to several nm.
  • the predetermined processing time described above is determined by calculation by the controller 9, but a predetermined value is inputted by the user, and only the timer processing (processing for sending an end signal when the predetermined time elapses) is performed by the controller. 9 may be executed.
  • the end point is determined by timer processing, feedback control may be performed by detecting the actual value using a known film thickness detector or the like.
  • the trimming speed can be made extremely low, so that a desired dimension can be obtained with high accuracy even by a method of determining the processing time based on the trimming speed, There are advantages that the end point detection is easy and the apparatus configuration can be simplified.
  • the present invention is not limited to the embodiment described above.
  • capacitively coupled plasma is generated in the above-described embodiment, an apparatus configuration that generates inductively coupled plasma may be used, or an apparatus configuration that generates ECR or helicon wave plasma may be used.
  • Example 1 in order to confirm that the trimming apparatus 100 shown in FIG. 1 satisfies the requirements for electron density, an electron density measurement test of the trimming chamber 4 was performed.
  • the electron density of the trimming processing chamber 4 was measured using a Langmuir probe to measure the saturation ion current density at a position 11 mm directly above the processing substrate.
  • Oxygen 500 sccm was used as a trimming gas, and argon 50 sccm was used as a carrier gas.
  • a power of 200 W was applied to the high-frequency electrode 2 provided in the plasma generation chamber 3.
  • the process pressure was 20 Pa.
  • FIG. 4 is an electron density measurement result diagram of Example 1. As shown in FIG. 4, the electron density was kept at 1 ⁇ 10 +7 cm ⁇ 3 or less, and it was confirmed that the electron density was lower by 3 digits or more than when the partition plate 1 was not used.
  • Example 2 Next, as Example 2, a test for confirming the effect of reducing the charge-up damage was performed.
  • Example 2 the MOS capacitor was processed using the same apparatus and process conditions as in Example 1.
  • a similar test was performed on a capacitive coupling type device without the partition plate 1.
  • the test was performed with the trimming gas as oxygen at 500 sccm, the pressure as 180 Pa, and the input power as 1000 W.
  • FIG. 5 to 8 are graphs showing the results of evaluating the charge-up damage by measuring the IV characteristics of the MOS capacitor.
  • the numerical values in FIG. 5 (Example 2) and FIG. 7 (Comparative Example) indicate the leakage current (pA) at each point.
  • the absolute value of the leakage current value of the MOS capacitor is large.
  • the numerical value in FIG. 6 (Example 2) and FIG. 8 (comparative example) has shown the breakdown voltage (V), and the absolute value of a breakdown voltage becomes small.
  • Example 3 Next, as Example 3, the trimming speed was measured.
  • Example 3 the substrate having a photoresist formed on the surface was processed and the trimming speed was measured using the same apparatus and process conditions as in Example 1. Further, as a comparative example, the substrate on which the photoresist was formed was processed under the same process conditions as in the comparative example in Example 1, and the trimming speed was measured.
  • FIG. 9 is a measurement result diagram of the trimming speed. As shown in FIG. 9, in the comparative example, the resist trimming speed is very high, 100 to 1000 nm / min. However, it is confirmed that the trimming speed is 10 nm / min or less in the resist trimming method using the radical of this embodiment. It was done.
  • Example 4 Next, as Example 4, the resist trimming speed and in-plane distribution were measured by changing the substrate temperature and the process pressure.
  • Oxygen 500 sccm was used as a trimming gas, and argon 50 sccm was used as a carrier gas. A power of 200 W was applied to the high-frequency electrode 2 provided in the plasma generation chamber 3.
  • the process pressures in the plasma generation chamber 3 and the trimming chamber 4 are both 20 to 50 Pa, and the temperature of the processing substrate is 30 to 100 ° C., which is a low temperature region that does not affect the resist resistance.
  • FIG. 10 is a measurement result diagram of the trimming speed and the temperature of the substrate holding mechanism.
  • the resist trimming rate was 10 nm / min or less, and the trimming rate was kept low.
  • FIG. 11 shows the process pressure and the in-plane distribution, and confirms the in-plane distribution on the 200 mm substrate.
  • the maximum trimming distribution was 3 ⁇ and 5% or less.
  • Example 5 Next, as Example 5, a test for confirming dimensional controllability was performed.
  • the process gas used was 500 sccm of oxygen and 50 sccm of argon as the carrier gas.
  • the high frequency electrode 2 disposed in the plasma generation chamber 3 was supplied with a power of 200 W.
  • the process pressure of the plasma generation chamber 3 and the trimming chamber 4 was 50 Pa, and the temperature of the processing substrate was 100 ° C.
  • CD measurement was performed on a trimming method using inductively coupled plasma in which plasma was irradiated as it was without selecting radicals.
  • the process gas was oxygen 1 sccm, Ar 50 sccm, power 500 W, process pressure 1 Pa, and the processing substrate temperature was 80 ° C.
  • FIG. 12 is a measurement result diagram of the resist pattern CD.
  • the trimming method of the present embodiment can perform resist trimming with much higher accuracy of about 200 sec for performing 50 nm trimming.
  • Example 6 Next, as Example 6, a test for confirming the isotropy of the trimming process was performed.
  • Example 6 The process conditions of Example 6 and Comparative Example were the same as those of Example 5.
  • FIG. 13 is a measurement result diagram of the amount of change in aspect ratio after resist trimming.
  • the amount of change in the horizontal direction after resist trimming is A, and the amount of change in the vertical direction is B.
  • the aspect ratio of trimming tends to be anisotropic due to ion bombardment and the like, but the ion trimming can be reduced and the aspect ratio can be trimmed isotropically by the resist trimming method of this embodiment.

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Abstract

A resist trimming method includes a plasma generating step of generating plasma of a reaction gas; a removing step of removing ions and electrons from the generated plasma and selectively taking radicals; and a trimming step of trimming a resist pattern by irradiating the resist pattern with the plasma from which the ions and the electrons are removed.

Description

レジストトリミング方法及びトリミング装置Resist trimming method and trimming apparatus
　本発明は、露光装置の解像限界以下の超微細レジストパターンを形成するためのレジストトリミング方法及びトリミング装置に関する。 The present invention relates to a resist trimming method and a trimming apparatus for forming an ultrafine resist pattern below the resolution limit of an exposure apparatus.
　近年、半導体の高集積化及びチップサイズの縮小化に伴い、パターンサイズの微細化が推し進められている。半導体装置の速度性能は、材料が同じ場合には主に回路パターンの幅寸法によって決まるため、年々微細化が推し進められており、それに応じて精密な露光工程が要求される。 In recent years, with the high integration of semiconductors and the reduction in chip size, the pattern size has been miniaturized. Since the speed performance of a semiconductor device is mainly determined by the width dimension of a circuit pattern when the materials are the same, miniaturization has been promoted year by year, and a precise exposure process is required accordingly.
　露光工程の微細化能力は、主に露光光源の波長に依存するため、Ｉ線からＫｒＦレーザ、ＡｒＦレーザと、より短い波長の光源とその波長に感度のあるレジスト材料の開発が進められてきた。しかし、近年、光源の短波長化が微細化の進展に追いつかず、パターン転写能力が限界にきており、ゲート長３２ｎｍ以降の世代では微細化を行うことが難しい。 Since the miniaturization capability of the exposure process mainly depends on the wavelength of the exposure light source, the development of resist materials sensitive to the wavelength from the I-line to the KrF laser, ArF laser, the shorter wavelength light source and the wavelength has been advanced. . However, in recent years, the shortening of the wavelength of the light source has not caught up with the progress of miniaturization, and the pattern transfer capability has reached its limit, and it is difficult to perform miniaturization in generations with a gate length of 32 nm or later.
　そこで、露光によって形成できないような微細パターンについて、別の方法でレジストを変形させ、細らせて微細化する技術の開発が行われている。 Therefore, development of a technique for refining a fine pattern that cannot be formed by exposure by deforming the resist by another method and making it finer is underway.
　このような技術として、例えば、真空処理室内に酸素等のエッチングガスを導入し、減圧下でプラズマ放電を発生させ、プラズマ処理を施してレジストパターンの幅を狭くするレジストトリミングという技術が開示されている（特許文献１参照）。 As such a technique, for example, a technique called resist trimming is disclosed in which an etching gas such as oxygen is introduced into a vacuum processing chamber, a plasma discharge is generated under reduced pressure, and plasma processing is performed to narrow the width of the resist pattern. (See Patent Document 1).
特開２００５－３０３０８８号公報Japanese Patent Laying-Open No. 2005-303088
　しかしながら、特許文献１に示すような容量結合型プラズマを利用したレジストトリミングでは、次のような問題があった。 However, resist trimming using capacitively coupled plasma as shown in Patent Document 1 has the following problems.
　第１に、プラズマの電子密度が１×１０+10～１０+12ｃｍ-3と非常に高いために、レジストのエッチング速度、即ちトリミング速度が数百から数千ｎｍ／ｍｉｎと速すぎて、数十ｎｍから数ｎｍレベルの寸法制御が難しい。 First, since the electron density of plasma is as high as 1 × 10 +10 to 10 +12 cm −3 , the resist etching rate, that is, the trimming rate is too high, from several hundred to several thousand nm / min. It is difficult to control the dimensions of several tens to several nanometers.
　第２に、上述したように、プラズマの電子密度やイオン密度が高いと、高密度のプラズマが基板に直接照射されるために、処理基板へのチャージアップダメージを引き起こす可能性がある。 Second, as described above, if the electron density or ion density of the plasma is high, the high-density plasma is directly irradiated onto the substrate, which may cause charge-up damage to the processing substrate.
　第３に、イオン密度が高いと、イオン衝撃により等方的なエッチングを行うことが難しく、例えば、目的のパターン幅にしようとすると、パターン厚さが小さくなりすぎてしまうことがある。 Third, if the ion density is high, it is difficult to perform isotropic etching by ion bombardment. For example, if the pattern width is intended, the pattern thickness may become too small.
　本発明は、上述した問題に鑑み提案されたもので、低いトリミング速度でレジストトリミングを実施することにより、高精度で寸法をコントロールすることが可能なレジストトリミング方法及びトリミング装置を提供することを目的とする。 The present invention has been proposed in view of the above-described problems, and an object of the present invention is to provide a resist trimming method and a trimming apparatus capable of controlling dimensions with high accuracy by performing resist trimming at a low trimming speed. And
　本発明のレジストトリミング方法は、上述した目的を達成するため、以下の工程を含むことを特徴とする。 The resist trimming method of the present invention includes the following steps in order to achieve the above-described object.
　第１の工程は、反応ガスのプラズマを生成するプラズマ生成工程である。第２の工程は、生成したプラズマからイオン及び電子を除去し、ラジカルを選択的に取り出す除去工程である。第３の工程は、イオン及び電子が除去されたプラズマをレジストパターンに照射することで、レジストパターンをトリミングするトリミング工程である。 The first step is a plasma generation step for generating a reactive gas plasma. The second step is a removal step in which ions and electrons are removed from the generated plasma to selectively extract radicals. The third step is a trimming step for trimming the resist pattern by irradiating the resist pattern with plasma from which ions and electrons have been removed.
　本発明によれば、低いトリミング速度でレジストトリミングを実施することができるため、高精度で寸法をコントロールすることが可能となる。 According to the present invention, since resist trimming can be performed at a low trimming speed, dimensions can be controlled with high accuracy.
　添付図面は明細書に含まれ、その一部を構成し、本発明の実施の形態を示し、その記述と共に本発明の原理を説明するために用いられる。 The accompanying drawings are included in the specification, constitute a part thereof, show an embodiment of the invention, and are used to explain the principle of the invention together with the description.
本実施形態に係るトリミング装置の構成を示す概略図。Schematic which shows the structure of the trimming apparatus which concerns on this embodiment. 本実施形態に係るレジストトリミング方法を示す説明図。Explanatory drawing which shows the resist trimming method which concerns on this embodiment. 本実施形態に係るレジストトリミング方法を示す説明図。Explanatory drawing which shows the resist trimming method which concerns on this embodiment. ＣＤとトリミング時間との対応を示すマップ。Map showing correspondence between CD and trimming time. 実施例１の電子密度測定結果図。The electron density measurement result figure of Example 1. FIG. ＭＯＳキャパシタのＩＶ特性の測定により、チャージアップダメージを評価した結果図（実施例２／リーク電流）。FIG. 6 is a diagram illustrating a result of evaluating charge-up damage by measuring the IV characteristics of a MOS capacitor (Example 2 / leakage current). ＭＯＳキャパシタのＩＶ特性の測定により、チャージアップダメージを評価した結果図（実施例２／絶縁破壊電圧）。The result figure which evaluated the charge-up damage by the measurement of the IV characteristic of a MOS capacitor (Example 2 / breakdown voltage). ＭＯＳキャパシタのＩＶ特性の測定により、チャージアップダメージを評価した結果図（比較例／リーク電流）。The result figure which evaluated the charge-up damage by the measurement of the IV characteristic of a MOS capacitor (comparative example / leakage current). ＭＯＳキャパシタのＩＶ特性の測定により、チャージアップダメージを評価した結果図（比較例／絶縁破壊電圧）。The result figure which evaluated charge-up damage by measuring the IV characteristic of a MOS capacitor (comparative example / dielectric breakdown voltage). トリミング速度の測定結果図。The measurement result figure of trimming speed. トリミング速度と基板保持機構の温度の測定結果図。The measurement result figure of the trimming speed and the temperature of the substrate holding mechanism. プロセス圧力と面内分布を示す図。The figure which shows process pressure and in-plane distribution. レジストパターンのＣＤの測定結果図。The measurement result figure of CD of a resist pattern. レジストトリミング後の縦横比の変化量の測定結果図。The measurement result figure of the amount of change of the aspect ratio after resist trimming.
　以下、本発明に係る一実施形態について図面を参照して詳細に説明する。なお、以下に説明する実施形態は、本発明の実現手段としての一例であり、本発明が適用される装置の構成や各種条件によって適宜修正又は変更されるべきものであり、本発明は以下の実施形態に限定されるものではない。 Hereinafter, an embodiment according to the present invention will be described in detail with reference to the drawings. The embodiment described below is an example as means for realizing the present invention, and should be appropriately modified or changed according to the configuration and various conditions of the apparatus to which the present invention is applied. It is not limited to the embodiment.
　［トリミング装置の構成］
　本発明に係るトリミング装置は、高周波電極が配置されたプラズマ生成空間と、被処理体を配置可能なトリミング処理空間と、導電性部材と、ガス導入手段と、排気手段と、高周波電力供給手段と、コントローラとを備えている。導電性部材は、プラズマ生成空間とトリミング処理空間との間に配されており、両空間を連通するための複数の貫通孔を有している。ガス導入手段は、プラズマ生成空間に反応ガスを導入する。排気手段は、プラズマ生成空間及びトリミング処理空間を排気する。高周波電力供給手段は、高周波電極への電力供給を行う。コントローラは、ガス導入手段、排気手段及び高周波電力供給手段を制御することで、イオン及び電子が除去されたプラズマをトリミング処理空間に導入し、当該トリミング処理空間に導入されたレジストパターンをトリミングする。 [Configuration of trimming device]
A trimming apparatus according to the present invention includes a plasma generation space in which a high-frequency electrode is disposed, a trimming processing space in which an object to be processed can be disposed, a conductive member, a gas introduction unit, an exhaust unit, and a high-frequency power supply unit. And a controller. The conductive member is disposed between the plasma generation space and the trimming processing space, and has a plurality of through holes for communicating both spaces. The gas introduction means introduces a reaction gas into the plasma generation space. The exhaust means exhausts the plasma generation space and the trimming processing space. The high frequency power supply means supplies power to the high frequency electrode. The controller controls the gas introduction unit, the exhaust unit, and the high frequency power supply unit to introduce the plasma from which ions and electrons have been removed into the trimming process space and trim the resist pattern introduced into the trimming process space.
　以下、図１を参照して、本実施形態に係るトリミング装置を具体的に説明する。図１は、本実施形態に係るトリミング装置の構成を示す概略図である。 Hereinafter, the trimming apparatus according to the present embodiment will be described in detail with reference to FIG. FIG. 1 is a schematic diagram illustrating a configuration of a trimming apparatus according to the present embodiment.
　図１に示すように、本実施形態に係るトリミング装置１００は、内部を真空状態に保持可能な真空容器１１を備えている。真空容器１１の内部には、導電性部材（ＳＵＳやアルミニウム）からなる隔壁板１が、水平な状態で設けられている。真空容器１１は、この隔壁板１によって接地されるとともに、プラズマ生成空間として機能するプラズマ放電空間を形成するプラズマ生成室３と、トリミング処理空間として機能するトリミング処理室４とに分けられている。この隔壁板１には、プラズマ生成室３とトリミング処理室４とを上下方向に貫通する複数の貫通孔５が形成されており、これにより電子やイオンを遮断する。また、プラズマ生成室３に反応ガスであるトリミングガスを導入し、高周波電力供給手段として機能する高周波電源２１から高周波電極２に高周波電力（例えば、１３．５６ＭＨｚ）を供給することで、容量結合プラズマが生起される。 As shown in FIG. 1, a trimming apparatus 100 according to the present embodiment includes a vacuum container 11 that can keep the inside in a vacuum state. Inside the vacuum vessel 11, a partition plate 1 made of a conductive member (SUS or aluminum) is provided in a horizontal state. The vacuum vessel 11 is grounded by the partition plate 1 and is divided into a plasma generation chamber 3 that forms a plasma discharge space that functions as a plasma generation space, and a trimming processing chamber 4 that functions as a trimming processing space. The partition plate 1 is formed with a plurality of through holes 5 penetrating the plasma generation chamber 3 and the trimming chamber 4 in the vertical direction, thereby blocking electrons and ions. Further, a trimming gas that is a reactive gas is introduced into the plasma generation chamber 3, and high frequency power (for example, 13.56 MHz) is supplied to the high frequency electrode 2 from the high frequency power supply 21 that functions as a high frequency power supply means, thereby capacitively coupled plasma. Is born.
　トリミング処理室４には、静電吸着作用等により基板１２を保持可能な基板保持機構６が配置されている。また、基板保持機構６の内部にはヒータ７が設けられており、このヒータ７によって基板温度を均一にコントロールし、トリミング分布を均一に保つことが可能である。なお、隔壁板１や真空容器１１の内部全体にもヒータを取り付けて真空容器１１の全体の温度を均一にコントロールすることにより、面内分布の良いトリミング形状を得ることが可能である。 In the trimming processing chamber 4, a substrate holding mechanism 6 capable of holding the substrate 12 by an electrostatic adsorption action or the like is disposed. In addition, a heater 7 is provided inside the substrate holding mechanism 6, and it is possible to uniformly control the substrate temperature by this heater 7 and keep the trimming distribution uniform. It is possible to obtain a trimming shape with a good in-plane distribution by attaching a heater to the entire interior of the partition plate 1 and the vacuum container 11 to uniformly control the temperature of the entire vacuum container 11.
　ガス導入手段として機能するガス導入系８は、ガスの供給源からプラズマ生成室３にガスを導入するものであり、図示しないマスフローコントローラを有し、コントローラ９からの指令に基づいてプラズマ生成室３に導入する流量を調整可能になっている。ガス導入系８から導入するトリミングガスとしては、ホトレジストの構成材料となる有機化合物との反応により、Ｃ，Ｈ，ＯなどをＣＯ2などの成分に変換可能な物質としてＯ原子、Ｈ原子、Ｎ原子などを含むガスを用いることができる。Ｏ原子を含むラジカルは反応性が高いため好適に用いることができ、例えば、ホトレジスト中のＣ原子を二酸化炭素などの成分
に変換する。また、Ｈ原子を含むラジカルは、ホトレジスト中のＣ原子と反応して、ＣＨXなどの成分に変換する。例えば、Ｏ2、Ｏ3、Ｎ2、ＮＨ3、Ｈ2、ＮＯX、ＣXＨY（Ｘ，Ｙは任意の数、例えば、メタンやエタンなどのアルカン類、エチレンなどのアルキン類）、ＣXＨYＯZ（Ｘ，Ｙ，Ｚは任意の数、例えば、アルコール類（ＣＨ3ＯＨ等）、ケトン類（メチルエチルケトン、イソプロピルメチルケトン、メチルプロピルケトン等）、アルデヒド類、カルボン酸類、エーテル類、エステル類）などを含むガスを用いることができる。 The gas introduction system 8 that functions as a gas introduction means introduces gas from a gas supply source to the plasma generation chamber 3, has a mass flow controller (not shown), and is based on a command from the controller 9. The flow rate introduced into the can be adjusted. Trimming gas introduced from the gas introduction system 8 includes O atom, H atom, N atom as a substance that can convert C, H, O, etc. into a component such as CO2 by reaction with an organic compound as a constituent material of the photoresist. A gas containing the above can be used. Radicals containing O atoms can be suitably used because of their high reactivity. For example, C atoms in a photoresist are converted into components such as carbon dioxide. Further, radicals containing H atoms react with C atoms in the photoresist and are converted into components such as CHX. For example, O2, O3, N2, NH3, H2, NOX, CXHY (X and Y are arbitrary numbers, for example, alkanes such as methane and ethane, alkynes such as ethylene), CXHYOZ (X, Y, and Z are arbitrary) For example, alcohols (such as CH 3 OH), ketones (such as methyl ethyl ketone, isopropyl methyl ketone, and methyl propyl ketone), aldehydes, carboxylic acids, ethers, and esters) can be used.
　トリミングガスをプラズマ生成室３に導入した状態で、高周波電力を高周波電極２に供給すると、プラズマ生成室３でラジカル発生源となるプラズマが発生する。プラズマは、電子、ラジカル、イオンを含むが、高周波放電により帯電した隔壁板１によって電子やイオンは遮断され、ラジカルが選択的に貫通孔５を通過してトリミング処理室４に導入され、基板１２に照射されることになる。例えば、酸素がプラズマ生成室３に導入された状態で高周波電力をプラズマ生成室３に供給すると、酸素プラズマが発生する。その内、酸素ラジカルのみが貫通孔５を通過して分離されてトリミング処理室４に導入され、酸素ラジカルが処理基板１２に照射される。酸素ラジカルは、ホトレジスト中のＣ原子と結合してＣＯ2やＣＯとなり、あるいはＨ原子と結合しＨ2Ｏなどに変換される。 When a high frequency power is supplied to the high frequency electrode 2 with the trimming gas introduced into the plasma generation chamber 3, plasma serving as a radical generation source is generated in the plasma generation chamber 3. The plasma contains electrons, radicals, and ions, but the electrons and ions are blocked by the partition plate 1 charged by high-frequency discharge, and the radicals are selectively introduced into the trimming chamber 4 through the through-holes 5 to form the substrate 12. Will be irradiated. For example, when high frequency power is supplied to the plasma generation chamber 3 in a state where oxygen is introduced into the plasma generation chamber 3, oxygen plasma is generated. Among them, only oxygen radicals pass through the through holes 5 and are separated and introduced into the trimming process chamber 4, and the process substrate 12 is irradiated with oxygen radicals. The oxygen radicals are combined with C atoms in the photoresist to become CO2 or CO, or are combined with H atoms and converted to H2O or the like.
　なお、上記構成の装置とした場合、隔壁板１の貫通孔５内でのガス流速をｕ、実質的な貫通孔５の長さをＬ、相互ガス拡散係数をＤとすると、ｕＬ／Ｄ＞１の条件を満たすように貫通孔５の長さＬやガス流速ｕを設定する。これにより、隔壁板１からプラズマ生成室３へのラジカルの逆拡散が防止される。また、隔壁板１の貫通孔５の径サイズや貫通孔５の数は、電子やイオンの遮断量にも関係しており、トリミング処理室４における電子密度を目的の値にするように設定される。 In the case of the apparatus having the above configuration, if the gas flow rate in the through hole 5 of the partition plate 1 is u, the substantial length of the through hole 5 is L, and the mutual gas diffusion coefficient is D, uL / D> The length L of the through hole 5 and the gas flow rate u are set so as to satisfy the condition of 1. Thereby, the reverse diffusion of radicals from the partition plate 1 to the plasma generation chamber 3 is prevented. The diameter size of the through holes 5 and the number of the through holes 5 in the partition plate 1 are also related to the amount of electrons and ions blocked, and are set so that the electron density in the trimming processing chamber 4 is set to a target value. The
　排気手段として機能する排気系１０は、図示しないターボ分子ポンプなどを備えて構成され、コントローラ９からの指令に基づいて所定の排気速度でトリミング処理室４を排気する。 The exhaust system 10 that functions as an exhaust means is configured to include a turbo molecular pump (not shown) and the like, and exhausts the trimming processing chamber 4 at a predetermined exhaust speed based on a command from the controller 9.
　コントローラ９は、高周波電源２１、ガス導入系８、排気系１０、ヒータ７などに指令を送ることで、高周波電力、ガス流量、プロセス圧力、処理時間、基板温度などのプロセス条件をコントロール可能になっている。プロセス圧力は、本実施形態では、図示しない圧力センサからの入力に基づき、ガス導入系８及び排気系１０の少なくとも一方をコントロールすることで、所定の値に設定される。なお、コントローラ９は、一般的なコンピュータ、各種装置への指令を送信可能なドライバなどを備えて構成され、プログラムに基づきトリミング処理を実行する。このような構成からなるコントローラ９は、制御部９１、
タイマ処理部９２、トリミング速度情報記憶部９３、終了タイミング演算部９４として機能する。制御部９１は、コントローラ９を統合的に制御する機能部である。タイマ処理部９２は、レジストパターンが所望のサイズにトリミングされた際に、トリミング処理を終了させるための機能部である。トリミング速度情報記憶部９３は、トリミング速度に関するトリミング速度情報を記憶するための機能部である。終了タイミング演算部９４は、トリミング速度情報に基づいて、トリミング処理の終了タイミングを決定するための機能部である。 The controller 9 can control process conditions such as high-frequency power, gas flow rate, process pressure, processing time, and substrate temperature by sending commands to the high-frequency power source 21, the gas introduction system 8, the exhaust system 10, the heater 7, and the like. ing. In the present embodiment, the process pressure is set to a predetermined value by controlling at least one of the gas introduction system 8 and the exhaust system 10 based on an input from a pressure sensor (not shown). The controller 9 includes a general computer, a driver that can transmit commands to various devices, and the like, and executes trimming processing based on a program. The controller 9 having such a configuration includes a control unit 91,
It functions as a timer processing unit 92, a trimming speed information storage unit 93, and an end timing calculation unit 94. The control unit 91 is a functional unit that controls the controller 9 in an integrated manner. The timer processing unit 92 is a functional unit for ending the trimming process when the resist pattern is trimmed to a desired size. The trimming speed information storage unit 93 is a functional unit for storing trimming speed information related to the trimming speed. The end timing calculation unit 94 is a functional unit for determining the end timing of the trimming process based on the trimming speed information.
　［トリミング方法］
　次に、上述した構成のトリミング装置を用いたレジストトリミング方法について説明する。 [Trimming method]
Next, a resist trimming method using the trimming apparatus having the above-described configuration will be described.
　本発明に係るレジストトリミング方法は、以下の３つの工程を主要な工程としている。第１の工程は、反応ガスのプラズマを生成するプラズマ生成工程である。第２の工程は、生成したプラズマからイオン及び電子を除去し、ラジカルを選択的に取り出す除去工程である。第３の工程は、イオン及び電子が除去されたプラズマをレジストパターンに照射することで、レジストパターンをトリミングするトリミング工程である。また、トリミング工程は、プラズマ生成空間に反応ガスを導入し、高周波電極に高周波電力を供給し、高周波放電させることで、プラズマを生成する。そして、生成したプラズマを導電
性部材を介してトリミング処理空間に導入することで、イオン及び電子が除去されたプラズマを照射するようになっている。このトリミング工程では、電子密度が１×１０+7ｃｍ-3以下のプラズマを照射することが好ましい。 The resist trimming method according to the present invention includes the following three steps as main steps. The first step is a plasma generation step for generating plasma of a reactive gas. The second step is a removal step in which ions and electrons are removed from the generated plasma to selectively extract radicals. The third step is a trimming step for trimming the resist pattern by irradiating the resist pattern with plasma from which ions and electrons have been removed. In the trimming step, plasma is generated by introducing a reactive gas into the plasma generation space, supplying high frequency power to the high frequency electrode, and causing high frequency discharge. Then, the generated plasma is introduced into the trimming processing space via a conductive member, so that the plasma from which ions and electrons are removed is irradiated. In this trimming step, it is preferable to irradiate plasma with an electron density of 1 × 10 +7 cm −3 or less.
　以下、図２Ａ，Ｂを参照して、本実施形態に係るレジストトリミング方法について具体的に説明する。図２Ａ，Ｂは、本実施形態に係るレジストトリミング方法を示す説明図である。 Hereinafter, the resist trimming method according to the present embodiment will be described in detail with reference to FIGS. 2A and 2B. 2A and 2B are explanatory views showing a resist trimming method according to this embodiment.
　まず、図２Ａに示すように、真空容器１１内を所定の真空度に維持した状態で、被エッチング材料３１及びレジストパターンが積層した基板（基板部分は図示せず）をトリミング処理室４内に搬入し、基板保持機構６に載置する。そして、プラズマ生成室３にトリミングガスを導入し、高周波電極２に高周波電力を印加してプラズマを生成する。プラズマはトリミング処理室４へ向かって拡散するが、イオンや電子は隔壁板１に遮断され、トリミングガス分子のラジカルのみがトリミング処理室４に導入され、トリミング処理室４内の電子密度が１×１０+7ｃｍ-3以下に維持される。 First, as shown in FIG. 2A, the substrate (the substrate portion is not shown) on which the material to be etched 31 and the resist pattern are stacked is placed in the trimming processing chamber 4 in a state where the inside of the vacuum vessel 11 is maintained at a predetermined degree of vacuum. It is carried in and placed on the substrate holding mechanism 6. Then, a trimming gas is introduced into the plasma generation chamber 3 and high frequency power is applied to the high frequency electrode 2 to generate plasma. Plasma diffuses toward the trimming chamber 4, but ions and electrons are blocked by the partition plate 1, and only radicals of trimming gas molecules are introduced into the trimming chamber 4, and the electron density in the trimming chamber 4 is 1 ×. It is maintained at 10 +7 cm −3 or less.
　トリミングガス分子のラジカルに曝されると、ホトレジスト３２の表面が酸化され、二酸化炭素などの気体分子に変換されて、図２Ｂに示すように、レジストパターンのサイズが小さくなる。 When exposed to radicals of trimming gas molecules, the surface of the photoresist 32 is oxidized and converted into gas molecules such as carbon dioxide, and the size of the resist pattern is reduced as shown in FIG. 2B.
　レジストパターンが所望のサイズになったときに、高周波電極２への電力供給を停止することで、トリミング処理を終了する。これは、例えば、所定の処理時間が経過したとき、所望のサイズになったとして処理を終了する。 When the resist pattern has a desired size, the power supply to the high-frequency electrode 2 is stopped to end the trimming process. For example, when a predetermined processing time elapses, the processing is terminated assuming that the desired size is reached.
　図３を参照して、所定の処理時間について説明する。図３は、ＣＤとトリミング時間（この例では、レジストパターンの線幅）との対応を示すマップである。所定の処理時間は、例えば、図３に示すようにＣＤとトリミング時間との対応を示すマップを、各プロセス条件（トリミングガス種、プロセス圧力、基板温度等）及び各レジスト材料に対応させてコントローラ９に記憶しておき、これに基づいて決定する。具体的には、処理前の線幅ＣＤ0から目的の線幅ＣＤ1にするのに必要な処理時間Δｔをマップに基づいて算出し、当該処理時間Δｔが経過したときに処理を終了させる。もちろん、マップではなく、近似式に基づいて所定の処理時間を算出したり、適切な補正を行ったりしてもよい。 The predetermined processing time will be described with reference to FIG. FIG. 3 is a map showing the correspondence between the CD and the trimming time (in this example, the line width of the resist pattern). For example, as shown in FIG. 3, the predetermined processing time is a controller that maps a map showing the correspondence between the CD and the trimming time, corresponding to each process condition (trimming gas type, process pressure, substrate temperature, etc.) and each resist material. 9 and determine based on this. Specifically, the processing time Δt required to change from the line width CD 0 before processing to the target line width CD 1 is calculated based on the map, and the processing is terminated when the processing time Δt has elapsed. Of course, a predetermined processing time may be calculated based on an approximate expression instead of a map, or appropriate correction may be performed.
　このように、電子密度は１×１０+7ｃｍ-3以下で、トリミングガスを用いてレジストパターンのトリミングを行うことにより、低いトリミング速度でレジストトリミングを実施することができる。このため、数十ｎｍから数ｎｍレベルでの高精度で寸法をコントロールすることが可能となる。 As described above, the electron density is 1 × 10 +7 cm −3 or less, and the resist trimming can be performed at a low trimming speed by trimming the resist pattern using the trimming gas. For this reason, it becomes possible to control the dimensions with high accuracy at a level of several tens nm to several nm.
　また、基板にプラズマを直接照射しないことで、基板への電荷によるチャージアップダメージを無くすことが可能である。さらに、等方的なエッチングを行うことが可能である。 Also, by not directly irradiating the substrate with plasma, it is possible to eliminate the charge-up damage due to the electric charge on the substrate. Furthermore, it is possible to perform isotropic etching.
　なお、上述した所定の処理時間は、コントローラ９が演算により決定しているが、予め定めた値をユーザに入力させ、タイマ処理（所定時間が経過したときに終了信号を送る処理）のみをコントローラ９に実行させてもよい。また、終点をタイマ処理により決定しているが、公知の膜厚検出器などを用いて実値を検出し、フィードバック制御を行うようにしてもよい。但し、本実施形態の場合、ラジカルを選択的に用いることで、トリミング速度を非常に小さくできるので、トリミング速度に基づいて処理時間を決定する方法でも高い精度で所望の寸法を得ることができ、終点検出が容易で、装置構成が簡素にできるという利点がある。 The predetermined processing time described above is determined by calculation by the controller 9, but a predetermined value is inputted by the user, and only the timer processing (processing for sending an end signal when the predetermined time elapses) is performed by the controller. 9 may be executed. Further, although the end point is determined by timer processing, feedback control may be performed by detecting the actual value using a known film thickness detector or the like. However, in the case of the present embodiment, by selectively using radicals, the trimming speed can be made extremely low, so that a desired dimension can be obtained with high accuracy even by a method of determining the processing time based on the trimming speed, There are advantages that the end point detection is easy and the apparatus configuration can be simplified.
　なお、本発明は上述した実施形態に限定されるものではない。例えば、上述した実施形態では容量結合プラズマを生成しているが、誘導結合プラズマを生成する装置構成であってもよいし、ＥＣＲやヘリコン波プラズマを生成する装置構成であってもよい。 Note that the present invention is not limited to the embodiment described above. For example, although capacitively coupled plasma is generated in the above-described embodiment, an apparatus configuration that generates inductively coupled plasma may be used, or an apparatus configuration that generates ECR or helicon wave plasma may be used.
　［実施例１］
　次に、本発明の具体的な実施例について説明する。 [Example 1]
Next, specific examples of the present invention will be described.
　実施例１として、図１に示すトリミング装置１００が電子密度の要件を満たしていることを確認するために、トリミング処理室４の電子密度測定試験を行った。トリミング処理室４の電子密度をＬａｎｇｍｕｉｒプローブを用いて、処理基板直上１１ｍｍの箇所における飽和イオン電流密度を測定した。 As Example 1, in order to confirm that the trimming apparatus 100 shown in FIG. 1 satisfies the requirements for electron density, an electron density measurement test of the trimming chamber 4 was performed. The electron density of the trimming processing chamber 4 was measured using a Langmuir probe to measure the saturation ion current density at a position 11 mm directly above the processing substrate.
　トリミングガスとして酸素５００ｓｃｃｍ、キャリアガスとしてアルゴン５０ｓｃｃｍを使用した。プラズマ生成室３に配備される高周波電極２へはパワー２００Ｗを投入した。プロセス圧力は２０Ｐａとした。 Oxygen 500 sccm was used as a trimming gas, and argon 50 sccm was used as a carrier gas. A power of 200 W was applied to the high-frequency electrode 2 provided in the plasma generation chamber 3. The process pressure was 20 Pa.
　図４は、実施例１の電子密度測定結果図である。図４に示すように、電子密度は１×１０+7ｃｍ-3以下に保たれており、隔壁板１を用いない場合と比較すると、電子密度は３桁以上低いことが確認できた。 FIG. 4 is an electron density measurement result diagram of Example 1. As shown in FIG. 4, the electron density was kept at 1 × 10 +7 cm −3 or less, and it was confirmed that the electron density was lower by 3 digits or more than when the partition plate 1 was not used.
　［実施例２］
　次に、実施例２として、チャージアップダメージの低減効果を確認する試験を行った。 [Example 2]
Next, as Example 2, a test for confirming the effect of reducing the charge-up damage was performed.
　実施例２では、実施例１と同様の装置及びプロセス条件で、ＭＯＳキャパシタに対する処理を行った。 In Example 2, the MOS capacitor was processed using the same apparatus and process conditions as in Example 1.
　比較例として、隔壁板１が存在しない容量結合タイプの装置について同様のテストを実施した。トリミングガスは酸素５００ｓｃｃｍ、圧力は１８０Ｐａ、投入パワーは１０００Ｗとして試験を行った。 As a comparative example, a similar test was performed on a capacitive coupling type device without the partition plate 1. The test was performed with the trimming gas as oxygen at 500 sccm, the pressure as 180 Pa, and the input power as 1000 W.
　測定は８”ウエハ面内５６ポイント、アンテナ比（上部電極とゲート酸化膜の面積比）は７０万倍で測定した。 Measurements were taken at 56 points on the 8 "wafer surface and antenna ratio (area ratio of upper electrode and gate oxide film) at 700,000 times.
　図５～図８は、ＭＯＳキャパシタのＩＶ特性の測定により、チャージアップダメージを評価した結果図である。図５（実施例２）及び図７（比較例）中の数値は、各ポイントのリーク電流（ｐＡ）を示しており、チャージアップダメージがある場合、ＭＯＳキャパシタのリーク電流値の絶対値が大きくなる。また、図６（実施例２）及び図８（比較例）中の数値は、絶縁破壊電圧（Ｖ）を示しており、絶縁破壊電圧の絶対値が小さくなる。 5 to 8 are graphs showing the results of evaluating the charge-up damage by measuring the IV characteristics of the MOS capacitor. The numerical values in FIG. 5 (Example 2) and FIG. 7 (Comparative Example) indicate the leakage current (pA) at each point. When there is a charge-up damage, the absolute value of the leakage current value of the MOS capacitor is large. Become. Moreover, the numerical value in FIG. 6 (Example 2) and FIG. 8 (comparative example) has shown the breakdown voltage (V), and the absolute value of a breakdown voltage becomes small.
　比較例では、リーク電流の絶対値がウエハ面内の中で１Ｅ＋６ｐＡと局所的に高い領域があり、また絶縁破壊電圧も局所的に小さい領域が測定された（図７、図８参照）。このことから、プラズマ中の電子密度が大きいために、わずかなプラズマの不均一によってチャージアップが誘発されることが確認された。一方、実施例２では、リーク電流はウエハ面内均一に４０ｐＡ以下で、絶縁破壊電圧も面内均一でチャージアップダメージがないことが確認された（図５、図６参照）。 In the comparative example, there was a region where the absolute value of the leak current was locally high as 1E + 6 pA in the wafer surface, and a region where the dielectric breakdown voltage was also locally small was measured (see FIGS. 7 and 8). From this, it was confirmed that charge up is induced by slight plasma non-uniformity due to the high electron density in the plasma. On the other hand, in Example 2, it was confirmed that the leakage current was uniformly 40 pA or less in the wafer surface, the dielectric breakdown voltage was uniform in the surface, and there was no charge-up damage (see FIGS. 5 and 6).
　［実施例３］
　次に、実施例３として、トリミング速度の測定を行った。 [Example 3]
Next, as Example 3, the trimming speed was measured.
　実施例３では、実施例１と同様の装置及びプロセス条件で、表面にホトレジストを形成した基板に対して処理を行い、トリミング速度を測定した。また、比較例として、実施例１における比較例と同様のプロセス条件で、ホトレジストを形成した基板に対して処理を行い、トリミング速度を測定した。 In Example 3, the substrate having a photoresist formed on the surface was processed and the trimming speed was measured using the same apparatus and process conditions as in Example 1. Further, as a comparative example, the substrate on which the photoresist was formed was processed under the same process conditions as in the comparative example in Example 1, and the trimming speed was measured.
　図９は、トリミング速度の測定結果図である。図９に示すように、比較例ではレジストのトリミング速度は１００～１０００ｎｍ／ｍｉｎと非常に速いが、本実施例のラジカルを用いたレジストトリミング方法ではトリミング速度は１０ｎｍ／ｍｉｎ以下であることが確認された。 FIG. 9 is a measurement result diagram of the trimming speed. As shown in FIG. 9, in the comparative example, the resist trimming speed is very high, 100 to 1000 nm / min. However, it is confirmed that the trimming speed is 10 nm / min or less in the resist trimming method using the radical of this embodiment. It was done.
　［実施例４］
　次に、実施例４として、レジストのトリミング速度と面内分布を基板温度やプロセス圧力を変化させて測定した。 [Example 4]
Next, as Example 4, the resist trimming speed and in-plane distribution were measured by changing the substrate temperature and the process pressure.
　トリミングガスとして酸素５００ｓｃｃｍと、キャリアガスとしてアルゴン５０ｓｃｃｍを使用した。プラズマ生成室３に配備される高周波電極２へは、パワー２００Ｗを投入した。 Oxygen 500 sccm was used as a trimming gas, and argon 50 sccm was used as a carrier gas. A power of 200 W was applied to the high-frequency electrode 2 provided in the plasma generation chamber 3.
　プラズマ生成室３とトリミング処理室４のプロセス圧力はどちらも２０から５０Ｐａ、処理基板の温度はレジストの耐性に影響がない低温領域である３０から１００℃の領域を使用した。 The process pressures in the plasma generation chamber 3 and the trimming chamber 4 are both 20 to 50 Pa, and the temperature of the processing substrate is 30 to 100 ° C., which is a low temperature region that does not affect the resist resistance.
　図１０は、トリミング速度と基板保持機構の温度の測定結果図である。 FIG. 10 is a measurement result diagram of the trimming speed and the temperature of the substrate holding mechanism.
　図１０に示すように、３０から１００℃のどの温度帯においても、レジストトリミング速度は１０ｎｍ／ｍｉｎ以下と、トリミング速度が低く抑えられることが確認された。 As shown in FIG. 10, in any temperature range from 30 to 100 ° C., it was confirmed that the resist trimming rate was 10 nm / min or less, and the trimming rate was kept low.
　図１１は、プロセス圧力と面内分布を示すもので、２００ｍｍ基板上の面内分布を確認したものである。 FIG. 11 shows the process pressure and the in-plane distribution, and confirms the in-plane distribution on the 200 mm substrate.
　Ｅｄｇｅ ｅｘｃｌｕｓｉｏｎ　５ｍｍ、面内２５ポイントで測定を実施した。 Measurement was performed with Edge exclusion 5 mm and 25 points within the surface.
　図１１に示すように、トリミング分布は３σで最高５％以下を実現した。 As shown in FIG. 11, the maximum trimming distribution was 3σ and 5% or less.
　［実施例５］
　次に、実施例５として、寸法制御性を確認する試験を行った。 [Example 5]
Next, as Example 5, a test for confirming dimensional controllability was performed.
　実施例５として、プロセスガスは酸素５００ｓｃｃｍとキャリアガスとしてアルゴン５０ｓｃｃｍを使用した。プラズマ生成室３に配備される高周波電極２はパワー２００Ｗを投入した。プラズマ生成室３とトリミング処理室４のプロセス圧力は５０Ｐａ、処理基板の温度は１００℃で実施した。 As Example 5, the process gas used was 500 sccm of oxygen and 50 sccm of argon as the carrier gas. The high frequency electrode 2 disposed in the plasma generation chamber 3 was supplied with a power of 200 W. The process pressure of the plasma generation chamber 3 and the trimming chamber 4 was 50 Pa, and the temperature of the processing substrate was 100 ° C.
　比較例として、ラジカルを選択することなく、プラズマをそのまま照射する誘導結合型プラズマを用いたトリミング方法に対してＣＤ測定を実施した。プロセスガスは酸素１ｓｃｃｍ、Ａｒ　５０ｓｃｃｍ、パワーは５００Ｗ、プロセス圧力は１Ｐａ、処理基板の温度は８０℃で実施した。 As a comparative example, CD measurement was performed on a trimming method using inductively coupled plasma in which plasma was irradiated as it was without selecting radicals. The process gas was oxygen 1 sccm, Ar 50 sccm, power 500 W, process pressure 1 Pa, and the processing substrate temperature was 80 ° C.
　図１２は、レジストパターンのＣＤの測定結果図である。 FIG. 12 is a measurement result diagram of the resist pattern CD.
　図１２に示すように、比較例でトリミングを実施した結果、５０ｎｍのトリミングがわずか３０ｓｅｃで終了してしまう。これに対して、本実施例のトリミング方法は、５０ｎｍのトリミングを実施するのに２００ｓｅｃ程度とはるかに精度良いレジストトリミングが実施できることが示された。 As shown in FIG. 12, as a result of performing the trimming in the comparative example, the 50 nm trimming is completed in only 30 seconds. On the other hand, it was shown that the trimming method of the present embodiment can perform resist trimming with much higher accuracy of about 200 sec for performing 50 nm trimming.
　［実施例６］
　次に、実施例６として、トリミング処理の等方性を確認する試験を行った。 [Example 6]
Next, as Example 6, a test for confirming the isotropy of the trimming process was performed.
　実施例６及び比較例のプロセス条件は、実施例５と同様とした。 The process conditions of Example 6 and Comparative Example were the same as those of Example 5.
　図１３は、レジストトリミング後の縦横比の変化量の測定結果図である。 FIG. 13 is a measurement result diagram of the amount of change in aspect ratio after resist trimming.
　レジストトリミング後の横方向の変化量をＡ、縦方向の変化量をＢとした。 The amount of change in the horizontal direction after resist trimming is A, and the amount of change in the vertical direction is B.
　図１３に示すように、本実施例のラジカルを用いたレジストトリミング方法では縦横比がＡ：Ｂ＝１：１であるのに対して、従来法では縦横比がＡ：Ｂ＝１：１．５であった。 As shown in FIG. 13, in the resist trimming method using radicals of this embodiment, the aspect ratio is A: B = 1: 1, whereas in the conventional method, the aspect ratio is A: B = 1: 1. It was 5.
　従来法ではイオン衝撃等のためにトリミングの縦横比が異方的になり易いが、本実施例のレジストトリミング方法によって、イオン衝撃を減らし、縦横比を等方的にトリミングすることができた。 In the conventional method, the aspect ratio of trimming tends to be anisotropic due to ion bombardment and the like, but the ion trimming can be reduced and the aspect ratio can be trimmed isotropically by the resist trimming method of this embodiment.
　以上、本発明の好ましい実施形態を添付図面の参照により説明したが、本発明はかかる実施形態に限定されるものではなく、請求の範囲の記載から把握される技術的範囲において種々な形態に変更可能である。 The preferred embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to such embodiments, and various modifications can be made within the technical scope grasped from the description of the scope of claims. Is possible.
　本願は、２００８年７月２４日提出の日本国特許出願特願２００８－１９０７７８を基礎として優先権を主張するものであり、その記載内容の全てを、ここに援用する。 This application claims priority based on Japanese Patent Application No. 2008-190778 filed on July 24, 2008, the entire contents of which are incorporated herein by reference.

Claims (6)

  1. 　反応ガスのプラズマを生成するプラズマ生成工程と、
    　生成したプラズマからイオン及び電子を除去し、ラジカルを選択的に取り出す除去工程と、
    　前記イオン及び電子が除去されたプラズマをレジストパターンに照射することで、レジストパターンをトリミングするトリミング工程と、を含むことを特徴とするレジストトリミング方法。     A plasma generation step for generating a plasma of the reaction gas;
    A removal step of selectively removing radicals by removing ions and electrons from the generated plasma;
    And a trimming step of trimming the resist pattern by irradiating the resist pattern with plasma from which the ions and electrons have been removed.
  2. 　前記レジストトリミング方法は、高周波電極が配置されたプラズマ生成空間と、レジストパターンを形成した被処理体を配置可能なトリミング処理空間と、前記プラズマ生成空間と前記トリミング処理空間との間に配され、かつ、両空間を連通する複数の貫通孔を有する導電性部材と、を備えたトリミング装置を用いて実行され、
    　前記トリミング工程は、前記プラズマ生成空間に反応ガスを導入し、高周波電極に高周波電力を供給し、高周波放電させることで、プラズマを生成し、生成したプラズマを前記導電性部材を介して前記トリミング処理空間に導入することで、イオン及び電子が除去されたプラズマを照射することを特徴とする請求項１に記載のレジストトリミング方法。     The resist trimming method is arranged between a plasma generation space in which a high-frequency electrode is disposed, a trimming processing space in which an object to be processed on which a resist pattern is formed can be disposed, and between the plasma generation space and the trimming processing space, And a conductive member having a plurality of through holes communicating with both spaces, and a trimming device,
    In the trimming step, plasma is generated by introducing a reactive gas into the plasma generation space, supplying high frequency power to a high frequency electrode, and performing high frequency discharge, and the generated plasma is subjected to the trimming process via the conductive member. The resist trimming method according to claim 1, wherein the resist trimming method is performed by irradiating the plasma from which ions and electrons are removed by introducing the plasma into the space.
  3. 　前記トリミング工程は、電子密度が１×１０+7ｃｍ-3以下のプラズマを照射することを特徴とする請求項１又は２に記載のレジストトリミング方法。 3. The resist trimming method according to claim 1, wherein the trimming step irradiates plasma with an electron density of 1 × 10 +7 cm −3 or less.
  4. 　高周波電極が配置されたプラズマ生成空間と、トリミング処理空間と、前記プラズマ生成空間と前記トリミング処理空間との間に配され、かつ、両空間を連通する複数の貫通孔を有する導電性部材と、
    　前記プラズマ生成空間に反応ガスを導入するガス導入手段と、
    　前記プラズマ生成空間及びトリミング処理空間を排気する排気手段と、
    　前記高周波電極への電力供給を行う高周波電力供給手段と、
    　前記ガス導入手段、前記排気手段及び前記高周波電力供給手段を制御することで、イオン及び電子が除去されたプラズマを前記トリミング処理空間に導入し、当該トリミング処理空間に導入されたレジストパターンをトリミングするトリミング処理を実行するコントローラと、を備えたことを特徴とするトリミング装置。     A plasma generating space in which a high-frequency electrode is disposed, a trimming process space, a conductive member disposed between the plasma generating space and the trimming process space, and having a plurality of through-holes communicating with each other;
    Gas introduction means for introducing a reaction gas into the plasma generation space;
    Exhaust means for exhausting the plasma generation space and the trimming processing space;
    High-frequency power supply means for supplying power to the high-frequency electrode;
    By controlling the gas introduction unit, the exhaust unit, and the high-frequency power supply unit, plasma from which ions and electrons have been removed is introduced into the trimming processing space, and the resist pattern introduced into the trimming processing space is trimmed. A trimming apparatus comprising: a controller that performs trimming processing.
  5. 　前記コントローラは、レジストパターンが所定のサイズにトリミングされた際に、トリミング処理を終了させるタイマ処理部を有することを特徴とする請求項４に記載のトリミング装置。 5. The trimming apparatus according to claim 4, wherein the controller includes a timer processing unit that terminates the trimming process when the resist pattern is trimmed to a predetermined size.
  6. 　前記コントローラは、
    トリミング速度に関するトリミング速度情報を記憶するトリミング速度情報記憶部と、
    　前記トリミング速度情報に基づいて、トリミング処理の終了タイミングを決定する終了タイミング演算部と、を有することを特徴とする請求項５に記載のトリミング装置。     The controller is
    A trimming speed information storage unit for storing trimming speed information related to the trimming speed;
    The trimming apparatus according to claim 5, further comprising: an end timing calculation unit that determines an end timing of the trimming process based on the trimming speed information.
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