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WO2010072192A2 - Security and/or valuable document comprising a conductive structure and method for producing same - Google Patents

Security and/or valuable document comprising a conductive structure and method for producing same Download PDF

Info

Publication number
WO2010072192A2
WO2010072192A2 PCT/DE2009/001717 DE2009001717W WO2010072192A2 WO 2010072192 A2 WO2010072192 A2 WO 2010072192A2 DE 2009001717 W DE2009001717 W DE 2009001717W WO 2010072192 A2 WO2010072192 A2 WO 2010072192A2
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
particles
preparation
conductive
coating
Prior art date
Application number
PCT/DE2009/001717
Other languages
German (de)
French (fr)
Other versions
WO2010072192A3 (en
Inventor
Oliver Muth
Michael Hagemann
Manfred Paeschke
Peter Fleischer
Eckhardt Wefringhaus
Original Assignee
Bundesdruckerei Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bundesdruckerei Gmbh filed Critical Bundesdruckerei Gmbh
Priority to EP09807487.5A priority Critical patent/EP2367966B1/en
Priority to CN200980152232.6A priority patent/CN102264946B/en
Publication of WO2010072192A2 publication Critical patent/WO2010072192A2/en
Publication of WO2010072192A3 publication Critical patent/WO2010072192A3/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073Multistep pretreatment
    • C23C18/208Multistep pretreatment with use of metal first
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1635Composition of the substrate
    • C23C18/1644Composition of the substrate porous substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2053Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment only one step pretreatment
    • C23C18/2066Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073Multistep pretreatment
    • C23C18/2086Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28Sensitising or activating
    • C23C18/30Activating or accelerating or sensitising with palladium or other noble metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/245Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • H05K3/246Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/386Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
    • H05K3/387Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive for electroless plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0209Inorganic, non-metallic particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0212Resin particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0215Metallic fillers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0347Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0716Metallic plating catalysts, e.g. for direct electroplating of through holes; Sensitising or activating metallic plating catalysts
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/072Electroless plating, e.g. finish plating or initial plating

Definitions

  • the invention relates to a method for producing a layer capable of conducting electric current on a substrate with the following method steps: a coating of a first layer is applied to the substrate
  • the substrate with the coating is treated with a second preparation for autocatalytic electroless metal coating.
  • the invention further relates to a conductive structure and a security and / or valuable document having such a conductive structure.
  • Security and / or value documents such as identity cards, passports, ID cards, access control cards, visas, tickets, driver's licenses, motor vehicle papers, personalized securities
  • Cards or personalized smart cards, increasingly have electronic circuits, and other active and passive electronic components, such as integrated semiconductors (ICs), but also chip modules, displays, batteries, coils, capacitors,
  • conductive structures such as interconnects to set up, which electrically connect electronic components with each other or even perform independent functions within a circuit.
  • the latter is given, for example, in the case of an RFID antenna.
  • Substrates made of organic polymer materials is that a good bond between substrate and conductive structure is formed on the basis of organic polymers used in printing inks binders.
  • the invention is therefore based on the technical problem of specifying a method for producing a conductive electrical layer layer on a substrate security and / or value document, wherein the conductive layer forms a good bond with the substrate and at the same time has an improved conductivity.
  • the invention teaches methods for producing a layer conductive for electrical current on a substrate with the following method steps: a) a coating of a first preparation is applied to the substrate, which is an organic binder, a wass ⁇ ges or organic solvent and Contains particles, b) the substrate with the coating becomes one
  • the substrate with the dried coating is treated with a second preparation for autocatalytic electroless metal plating.
  • the invention is based on the recognition that in the course of the drying process stage, the solvent from the
  • Coating is driven off, wherein the coating between the particles and m of Bmdeffenmatnx forms a pore system with interconnected open pores.
  • the volume fraction of the pores is large or small.
  • the electrically conductive particles are surrounded by a thin layer of the binder, wherein the particles m contact areas are connected or bonded together and with the substrate.
  • the porosity then corresponds to the core of a loose Schuttuhg the particles.
  • a deposition takes place not only on the outer surface of the coating, but also on inner surfaces, namely in the pore spaces.
  • the pores become as it were filled with deposited metal and form a network of metal.
  • a conductive structure is obtained which has the conductivity of the metal used, but exhibits a very good adhesion to the substrate due to the binder matrix.
  • the open porosity of the coating after stage b) and before stage c), measured by the mercury method or the xylene method, is typically in the range of 0.005 to 0.45, usually 0.02 to 0.10.
  • PC polycarbonate, especially bisphenol A polycarbonate
  • PET poly(ethylene glycol)
  • PET-G Polyethylene glycol terephthalate
  • PET-F Polymethyl methacrylate
  • ABS acrylonitrile-butadiene-styrene
  • PE polyethylene
  • PP polypropylene
  • PI polyimide or poly-trans-isoprene
  • PVC polyvinyl chloride
  • the substrate may then be, for example, a film or a foil composite of a security and / or value document, in particular an identity card, passport, ID card, access card, visa, ticket, driver's license, motor vehicle paper, personalized security, credit card, or personalized chip cards, be.
  • a security and / or value document in particular an identity card, passport, ID card, access card, visa, ticket, driver's license, motor vehicle paper, personalized security, credit card, or personalized chip cards.
  • any electrical function can be realized with conductive layers.
  • conductor tracks can be designed and configured for the "wired" transmission of electrical signals and / or electrical energy, but a conductive layer can also be a coil structure, more particularly an antenna structure, in particular an antenna structure which is part of an RFID circuit ,
  • the binder contained in the first preparation may in principle be any of the coating technology, including paint technology and printing technology, commonly employed binder or binder compound, the skilled artisan will readily select a binder suitable and compatible with a particular substrate material. Also, the proper choice of composition of the first formulation, which can be readily made by one skilled in the art, will depend on the type of application, for example on the printing technology used.
  • Typical layer thicknesses of a coating of stage a) are in the range of 0.5-100 .mu.m, in particular 5-50 .mu.m, usually 10-30 .mu.m.
  • a suitable binder for example, a polycarbonate derivative based on a gem-disubstituted Dihydroxydiphenylcycloalkans, which may have a weight average molecular weight of at least 10,000, preferably from 20,000 to 300,000.
  • the polycarbonate derivative may contain functional carbonate structural units of the formula (I)
  • R 1 and R 2 are independently hydrogen, halogen, preferably chlorine or bromine, Ci-Cg-alkyl, C 5 -C 6 - cycloalkyl, C 6 -Cio-aryl, preferably phenyl, and C 7 -C 2 - aralkyl, preferably phenyl-Ci-Cj-alkyl, in particular benzyl; m is an integer from 4 to 7, preferably 4 or 5; R 3 and R 4 are individually selectable for each X, independently of one another hydrogen or C 1 -C 6 -alkyl; X is carbon and n is an integer greater than 20, with the proviso that on at least one atom X, R 3 and R 4 are simultaneously alkyl.
  • X, R 3 and R 4 are simultaneously alkyl at 1 to 2 atoms, in particular only at one atom.
  • R 3 and R 4 may be in particular methyl.
  • the X atoms in the alpha position to the diphenyl-substituted C atom (Cl) can not be dialkyl-substituted.
  • the X atoms in beta position to Cl can be disubstituted with alkyl.
  • m 4 or 5.
  • the polycarbonate derivative can be prepared, for example, on the basis of monomers, such as 4,4 '- (3,3,5-trimethylcyclohexane-1,1-diyl) -diphenol.
  • Such a polycarbonate derivative can be prepared, for example, according to the document DE 38 32 396.6 from diphenols of the formula (Ia), the disclosure of which is hereby incorporated in full in the disclosure of this description. It is possible to use both a diphenol of the formula (Ia) to form homopolycarbonates and a plurality of diphenols of the formula (Ia) to form copolycarbonates (meaning of radicals, groups and parameters, as in formula I).
  • diphenols of the formula (Ia) may also be mixed with other diphenols, for example those of the formula (Ib)
  • Suitable other diphenols of the formula (Ib) are those in which Z is an aromatic radical having 6 to 30 C atoms, which may contain one or more aromatic nuclei, may be substituted, and aliphatic radicals or cycloaliphatic radicals other than those of the formula (II) Ia) or heteroatoms may contain as bridge members.
  • diphenols of the formula (Ib) are: hydroquinone, resorcinol, dihydroxydiphenyls, bis (hydroxyphenyl) alkanes, bis (hydroxyphenyl) cycloalkanes, bis (hydroxyphenyl) sulfides, bis (hydroxyphenyl) ether, bis (hydroxyphenyl) ether, bis (hydroxyphenyl) ether, (hydroxyphenyl) ketones, bis (hydroxyphenyl) sulfones, bis (hydroxyphenyl) sulfoxides, alpha, alpha 'bis (hydroxyphenyl) diisopropylbenzenes and their nuclear alkylated and nucleated compounds.
  • Preferred other diphenols are, for example: 4,4'-dihydroxydiphenyl, 2,2-bis (4-hydroxyphenyl) propane, 2,4-bis (4-hydroxyphenyl) -2-methylbutane, 1, 1-bis- ( 4-hydroxyphenyl) -cyclohexane, alpha, alpha -bis (4-hydroxyphenyl) -p-diisopropylbenzene, 2,2-bis (3-methyl-4-) hydroxyphenyl) -propane, 2,2-bis (3-chloro-4-hydroxyphenyl) propane, bis (3,5-dimethyl-4-hydroxyphenyl) -methane, 2,2-Bxs- (3, 5- dimethyl-4-hydroxyphenyl) -propane, bis (3, 5-dimethyl-4-hydroxyphenyl) sulfone, 2,4-bis (3,5-dimethyl-4-hydroxyphenyl) -2-methylbutane, 1,1 Bis- (3,5-dimethyl-4-hydroxyphenyl) -cycl
  • diphenols of the formula (Ib) are, for example: 2,2-bis (4-hydroxyphenyl) propane, 2,2-bis- (3,5-dimethyl-4-hydroxyphenyl) -propane, 2,2-bis - (3, 5-dichloro-4-hydroxyphenyl) -propane, 2,2-bis (3,5-dibromo-4-hydroxyphenyl) -propane and 1,1-bis (4-hydroxyphenyl) -cyclohexane.
  • 2, 2-bis (4-hydroxyphenyl) propane is preferred.
  • the other diphenols can be used both individually and in a mixture.
  • the molar ratio of diphenols of the formula (Ia) to the optionally used other diphenols of the formula (Ib) should be between 100 mol% (Ia) to 0 mol% (Ib) and 2 mol% (Ia) to 98 mol -% (Ib), preferably between 100 mol% (Ia) to 0 mol% (Ib) and 10 mol% (Ia) to 90 mol% (Ib) and especially between 100 mol% (Ia) to 0 mol% (Ib) and 30 mol% (Ia) to 70 mol% (Ib).
  • the high molecular weight polycarbonate derivatives of the diphenols of the formula (Ia), optionally in combination with other diphenols, can be prepared by the known polycarbonate production processes.
  • the various diphenols can be linked together both statistically and in blocks.
  • the polycarbonate derivatives used accordingly can be used per se be branched known manner. If the branching is desired, by condensing small amounts, preferably amounts between 0.05 and 2.0 mol% (based on diphenols used), of trifunctional or more than trifunctional in a known manner
  • Some branching agents having three or more than three phenolic hydroxyl groups are: phloroglucinol, 4,6-dimethyl-2,4,4-tris (4-hydroxyphenyl) -hepten-2, 4, ⁇ -dimethyl-2, 4, 6 tri- (4-hydroxyphenyl) heptane, 1,3,5-tri- (4-hydroxyphenyl) -benzene, 1,1,1-tri- (4-hydroxyphenyl) -ethane, tri- (4-hydroxyphenyl) - phenylmethane, 2,2-bis [4,4-bis (4-hydroxyphenyl) cyclohexyl] propane, 2,4-bis (4-hydroxyphenyl-isopropyl) -phenol, 2, 6-is- (2 -hydroxy-5-methyl-benzyl) -4-methylphenol, 2- (4-hydroxyphenyl) -2- (2,4-dihydroxyphenyl) -prop
  • Suitable compounds are, for example, phenol, tert-butylphenols or other alkyl-substituted phenols.
  • phenols of the formula (Ic) are suitable
  • R is a branched C 8 - and / or C 9 -alkyl radical.
  • the proportion of Ci-1 3 protons between 47 and 89% and the proportion of CH and CH 2 - protons between 53 and 11%;
  • R m o- and / or p-position to the OH group and more preferably the upper limit of the ortho-portion is 20%.
  • the chain terminators are generally used in amounts of 0.5 to 10, preferably 1.5 to 8 mol%, based on diphenols used.
  • the polycarbonate derivatives may preferably be prepared in a manner known per se according to the phase boundary behavior (compare H. Schnell "Chemistry and Physics of Polycarbonates", Polymer Reviews, Vol.
  • the diphenols of the formula (Ia) are dissolved in an aqueous alkaline phase.
  • mixtures of diphenols of the formula (Ia) and the other diphenols, for example those of the formula (Ib), are used.
  • chain terminators of, for example, the formula (Ic) can be added.
  • organic phase reacted with phosgene by the method of interfacial condensation.
  • the reaction temperature is between 0 0 C and 40 0 C.
  • the optionally used branching agents can either be initially charged with the diphenols in the aqueous alkaline phase or added dissolved in the organic solvent prior to phosgenation.
  • the diphenols of the formula (Ia) and, if appropriate, other diphenols (Ib) their mono- and / or bis-chlorocarbonic acid esters may also be used, these being added dissolved in organic solvents.
  • the amount of chain terminators and branching agents then depends on the molar amount of
  • Suitable organic solvents for the chain terminators and optionally for the branching agents and the chloroformates are, for example, methylene chloride, chlorobenzene, in particular mixtures of methylene chloride and chlorobenzene.
  • the chain terminators and branching agents used can be dissolved in the same solvent.
  • condensation serves, for example, methylene chloride
  • the preparation of the polycarbonate derivatives by the interfacial process can be catalyzed in a conventional manner by catalysts such as tertiary amines, in particular tertiary aliphatic amines such as tributylamine or triethylamine; the catalysts can be used in amounts of from 0.05 to 10 mol%, based on moles of diphenols used.
  • the catalysts can be used before starting the Phosphatization or during or after the Phosgem réelle be added.
  • the polycarbonate derivatives can be prepared by the known method in a homogeneous phase, the so-called "Py ⁇ din compiler” and by the known melt transesterification using, for example, diphenyl carbonate instead of phosgene.
  • the polycarbonate derivatives may be linear or branched, they are homopolycarbonates or copolycarbonates based on the diphenols of the formula (Ia). By arbitrary composition with other diphenols, in particular with those of the formula (Ib), the polycarbonate properties can be varied in a favorable manner.
  • the diphenols of the formula (Ia) are present in amounts of from 100 mol% to 2 mol%, preferably in amounts of from 100 mol% to 10 mol% and in particular in amounts of from 100 mol% to 30 mol% %, based on the total amount of 100 mol% of Diphenolem dealt contained in Polycarbonatede ⁇ vaten.
  • the polycarbonate derivative is, for example, a copolymer containing, in particular consisting of, monomer units M1 based on the formula
  • (Ib) in particular bisphenol A, and monomer units M2 based on the geminally disubstituted dihydroxydiphenylcycloalkane, preferably of the 4,4 - (3, 3, 5-trimethylcyclohexan-l, 1-diyl) diphenol, wherein the molar ratio of M2 / M1 is preferably greater than 0.3, in particular greater than 0.4, for example greater than 0.5.
  • Suitable compounds include aliphatic, cycloaliphatic, aromatic hydrocarbons, such as mesitylene, 1,2,4-trimethylbenzene, cumene and solvent naphtha, toluene, xylene; (organic) esters such as methyl acetate, ethyl acetate, butyl acetate, methoxypropyl acetate, ethyl 3-ethoxypropionate, butyglycol acetate. Preference is given to mesitylene, 1,2,4-trimethylbenzene, cumene and solvent naphtha, toluene, xylene, methyl acetate, ethyl acetate,
  • a solvent mixture suitable for the above-described binder in detail comprises, for example, A) 0 to 10% by weight, preferably 1 to 5% by weight, in particular 2 to 3% by weight, mesitylene, B) 10 to 50% by weight.
  • % preferably 25 to 50 wt .-%, in particular 30 to 40 wt .-%, l-methoxy-2-propanol acetate, C) 0 to 20 wt .-%, preferably 1 to 20 wt .-%, in particular 7 to 15% by weight, 1, 2, 4-trimethylbenzene, D) 10 to 50% by weight, preferably 25 to 50% by weight, in particular 30 to 40% by weight, of ethyl 3-ethoxypropionate, E) 0 to 10 wt .-%, preferably 0.01 to 2 wt .-%, in particular 0.05 to 0.5 wt .-%, cumene, and 0 to 80 wt .-%, preferably 1 to 40 wt.
  • the first preparation preferably contains a proportion of solvent, preferably organic solvent, of from 2 to 30% by weight, in particular from 4 to 10% by weight, based on the total weight of the preparation.
  • the particles of the first preparation may in principle also have any composition. They may be inorganic non-metallic or metallic particles, for example metal oxides such as SiO 2 or TiO 2, carbon black, silver, gold, titanium, tin, palladium, copper or other inorganic fillers known in coating technology. However, it is also possible to use polymer particles, for example those known in coating technology as organic fillers.
  • the first preparation preferably has a fraction of 30-99% by weight, in particular 70 to 95% by weight, of particles, preferably electrically conductive particles, in particular metal particles, for example silver particles.
  • the particle size is at least 90%, based on the volume, of the particles used in the range between 0, 1 and 30 .mu.m, in particular between 2 and 20 microns.
  • the particle size distribution can be monomodal, but it can also be set up mixtures of particles of different particle sizes or particle size distributions. For example, in conjunction dlO values of 0.5 to 5 .mu.m and d90 values of 5 to 30 .mu.m can be set up.
  • Particle size and particle size distributions, including d10 and d90 values can be determined by static laser diffraction methods, for example with an LS Particle Size Analyzer
  • Suitable finished first preparations are, for example, well-known preparations such as Conductor Paste DuPont 5029 or 5028 or 5033.
  • the application of the first preparation can be carried out with all well-known printing processes (for example through-, gravure-, portrait- and planographic printing but also inkjet printing, in particular screen printing).
  • printing processes for example through-, gravure-, portrait- and planographic printing but also inkjet printing, in particular screen printing.
  • other application methods customary in coating technology such as spraying, brushing, knife coating, dipping, etc. can also be used. Preference is given to screen printing and stencil printing.
  • the stage b) can be carried out for 0.1 to 100 mm., In particular 1 to 30 mm., At 30 - 200 0 C, in particular 60 to 130 ° C. It is possible in the context of stage b) also in place of the heating or in addition to a negative pressure, for example in the range of 10 to 800 mbar (absolute), in particular 100 to 600 mbar set up.
  • the second preparation may be a wet solution with a metal salt and a reducing agent, and optionally additionally with a complexing agent and / or one or more auxiliaries.
  • the metal salt can be a salt of Ag, Cu, Pd or Co.
  • the term salt also includes complexes of metals or metal ions.
  • the concentration of the metal salt may be in the range of 0.05-50 g / l, preferably 0.3-10 g / l, especially 0.4-2.0 g / l, based on the metal.
  • Counteremergent or complexing agents include EDTA, Rochelle's salt, citric acid, citrates, tartaric acid, propionic acid, acetates, lactic acid, pyrophosphates, pyridium-3-sulfonic acid, tartrates, phosphates, borates, cyanides, thiocyanides, halides, triethylenetetram, and methylamine.
  • the counterions used can be, for example, Na + or K + .
  • Suitable reducing agents are dextrose, glyoxal, Rochelle's salts, crystallized sugar, inverted sugar, co-ions, hydrides, glucams, metal hydrides,
  • Hydrazines such as dimethylammborane, diethylamineborane, triethylammborane, formaldehyde, hypophosphites, gluconates, polyhydric alcohols, etc.
  • Surface-active substances in particular non-ionic, for example, are used as auxiliary agents
  • Ethylene glycol monomer units or nonylphenol ethoxylate as well as commercially available agents, such as Ethylan 1008W, HB1, D253, CO35, CPG660, 1005, CD127P / N, A4, BCD42 or all agents sold under the name Berol (all from Akzo Nobel)
  • the surfactant may be present in concentrations of 0.01-10 g / l, especially 0.1-1.0 g / l, based on the total preparation.
  • auxiliaries are polymers, such as polyethylene glycol having an average molecular weight of 100-4000. This can be done in concentrations of 0.01 - 10 g / l, especially 0.1 - 1.0 g / l, based on the preparation.
  • inorganic or organic acids such as boric acid, in amounts of 0.1 to 300 g / l, based on the preparation may be provided.
  • organic or inorganic bases such as potassium, sodium, lithium,
  • Calcium, or magnesium hydroxide may be provided. These are then present in an amount which preferably adjusts the pH to 5.0-8.5, preferably 6.0-7.5, especially 6.0-7.2, especially 6.8-7.2. In the context of the invention, it is also possible to stabilize the pH value by means of suitable customary buffers. Concrete, suitable second compositions are otherwise described in the document WO 2006/065221 Al.
  • the step c) is preferably carried out a few 0 C, for example 2-5 ° C, below the tanning temperature of the second preparation.
  • Preferred bath temperatures are above 20 ° C., better above 30 ° C., in particular above 50 ° C.
  • the bath temperature should expediently be below 100 ° C., better below 80 ° C.
  • the invention further relates to a conductive structure having a substrate which does not conduct the electrical current and to which an electrical current is arranged on the substrate and connected thereto
  • Conductive layer wherein the conductive layer has a volume of the conductive layer by cross-metallic network, which is arranged in gaps between contained in the conductive layer electrically conductive or non-conductive particles, wherein the particles with each other and with the substrate via a associated organic binder.
  • a conductive structure is obtainable, for example, by the process according to the invention.
  • the invention also includes a security and / or value document containing such a conductive structure, in particular designed as an RFID antenna.
  • HF-RFID antennas printed on polycarbonate films of a thickness of 100 microns.
  • the screen printing paste used was product 5029 from DuPont. This product contains metallic silver particles, an organic binder and an organic solvent. It was dried for 10 min. at 100 ° C.
  • the antennas thus produced had a DC resistance of 30-35 ohms with a layer thickness of 20 microns.
  • Example 2 Inventive example
  • an antenna structure according to Example 1 was made with the same materials and dimensions.
  • This antenna structure was then with a preparation according to the reference WO 2006/065221 at 70 0 C, but a pH of 7.0 for 10 min. treated.
  • the layer thickness changed only insignificantly, a study of the cross-section showed that essentially also within the antenna structure, a deposition of silver had taken place.
  • a measurement of the resistance showed a reduction to 8 - 11 ohms.
  • an RFID chip module was mounted on the antenna and the response field strength was measured as a function of the transmission rate.
  • a transmission rate of 424 kbit / s 1.5 A / m were measured. This value corresponds to a value obtainable with a wire-wound antenna with the same module.

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Abstract

The invention relates to a method for producing a layer that is conductive for electric current on a substrate, comprising the following method steps: a) a coating composed of a first formulation, which contains an organic binder, an aqueous or organic solvent and electrically conductive particles, is applied to the substrate, b) the substrate with the coating is subjected to a drying method stage, wherein the solvent is removed, c) the substrate with the dried coating is treated with a second formulation for autocatalytic electroless metal coating. The invention furthermore relates to a conductive structure obtainable in this way, and to a security and/or valuable document comprising such a conductive structure.

Description

Sicherheits- und/oder Wertdokument mit einer leitfahigen Struktur und Verfahren zu dessen Herstellung Security and / or value document with a conductive structure and method for its production
Gebiet der ErfindungField of the invention
Die Erfindung betrifft ein Verfahren zur Herstellung einer für elektrischen Strom leitfahigen Schicht auf einem Substrat mit den folgenden Verfahrensschritten: auf das Substrat wird eine Beschichtung aus einer erstenThe invention relates to a method for producing a layer capable of conducting electric current on a substrate with the following method steps: a coating of a first layer is applied to the substrate
Zubereitung aufgebracht, welche elektrisch leitende Partikel enthalt, das Substrat mit der Beschichtung wird mit einer zweiten Zubereitung zur autokatalytischen stromlosen Metallbeschichtung behandelt. Die Erfindung betrifft des Weiteren eine so erhältliche Leitstruktur und ein Sicherheits- und/oder Wertdokument mit einer solchen Leitstruktur.Preparation containing electrically conductive particles, the substrate with the coating is treated with a second preparation for autocatalytic electroless metal coating. The invention further relates to a conductive structure and a security and / or valuable document having such a conductive structure.
Stand der Technik und Hintergrund der Erfindung.Prior art and background of the invention.
Sicherheits- und/oder Wertdokumente, wie beispielsweise Personalausweise, Reisepasse, ID-Karten, Zugangskontrollausweise, Visa, Tickets, Fuhrerscheine, Kraftfahrzeugpapiere, personalisierte WertpapiereSecurity and / or value documents, such as identity cards, passports, ID cards, access control cards, visas, tickets, driver's licenses, motor vehicle papers, personalized securities
Kreditkarten, oder personalisierte Chipkarten, weisen zunehmend elektronische Schaltkreise, und sonstige aktive und passive elektronische Bauelemente, wie beispielsweise integrierte Halbleiter (ICs), aber auch Chipmodule, Displays, Batterien, Spulen, Kondensatoren,Credit cards, or personalized smart cards, increasingly have electronic circuits, and other active and passive electronic components, such as integrated semiconductors (ICs), but also chip modules, displays, batteries, coils, capacitors,
Kontaktstellen, usw., auf. In diesem Zusammenhangen ist es oft notwendig, auf oder innerhalb des Sicherheits- und/oder Wertdokumentes leitfähige Strukturen (Leitstrukturen) , beispielsweise Leiterbahnen, einzurichten, welche elektronische Komponenten miteinander elektrisch verbinden oder auch eigenständige Funktionen innerhalb eines Schaltkreises ausüben. Letzteres ist beispielsweise im Falle einer RFID Antenne gegeben.Contact points, etc., on. In this connection it is often necessary, on or within the security and / or value document conductive structures (conductive structures), such as interconnects to set up, which electrically connect electronic components with each other or even perform independent functions within a circuit. The latter is given, for example, in the case of an RFID antenna.
Die Herstellung von solchen Leitstrukturen kann auf verschiedene Weisen erfolgen. Bekannt ist es,The production of such conductive structures can be done in various ways. It is known
Zubereitungen mit elektrisch leitfähigen Partikeln auf ein Substrat aufzubringen. Dabei kann die Auftragung beispielsweise mittels einschlägig bekannter Drucktechnologien erfolgen. Auf diese Weise hergestellte Leitstrukturen besitzen eine relativ geringeApply preparations with electrically conductive particles on a substrate. The application can be done for example by means of known printing technologies. Lead structures produced in this way have a relatively low
Leitfähigkeit, verglichen mit Strukturen aus metallischen Werkstoffen. Dies stört unter anderem in Hinblick auf störende Ohm'sche Verluste, geringere Induktivität, geringere Güte und hohe Ansprechfeldstärken. Ein Vorteil des Aufdruckens einer Leitstruktur insbesondere aufConductivity, compared with structures made of metallic materials. This interferes with, among others, in terms of disturbing Ohm 'sche losses, lower inductance, lower quality and high Ansprechfeldstärken. An advantage of printing a conductive structure in particular
Substrate aus organischen Polymerwerkstoffen ist, dass ein guter Haftverbund zwischen Substrat und Leitstruktur entsteht auf grund der in Druckfarben eingesetzten Bindemittel auf Basis organischer Polymere.Substrates made of organic polymer materials is that a good bond between substrate and conductive structure is formed on the basis of organic polymers used in printing inks binders.
Ferner ist es bekannt, Leitstrukturen auf nicht-leitenden Substraten dadurch herzustellen, dass direkt auf das Substrat oder nach vorheriger Aufbringung einer sogenannten Saat-Schicht (englisch Seed-Layer) ein Metall autokatalytisch und stromlos abgeschieden wird. Hierzu wird im Einzelnen beispielsweise auf die Literaturstelle WO 2006/065221 Al verwiesen. Dabei ist der Seed-Layer typischerweise sehr dünn, meist 1 - 3 μm, und der darauf abgeschiedene Metallfilm ist um ein vielfaches dicker, meist 5 - 50 μm, als der Seed-Layer. Bei dieser Technologie ist der Haftverbund zwischen Seed-Layer und Substrat einerseits sowie zwischen abgeschiedener Metallschicht und Seed-Layer andererseits problematisch. Während dies im Falle von starren Substraten, wie beispielsweise Silizium Substraten nicht notwendigerweise problematisch ist, entstehen daraus jedoch erhebliche Probleme im Falle von flexiblen Substraten, wie beispielsweise Folien aus organischen Polymerwerkstoffen, wie sie im Bereich der Sicherheits- und/oder Wertdokumente eingesetzt werden.Furthermore, it is known to produce conductive structures on non-conductive substrates by depositing a metal autocatalytically and electrolessly directly onto the substrate or after previously depositing a so-called seed layer (English: seed layer). For this purpose, in detail, for example, to the reference WO 2006/065221 Al referenced. The seed layer is typically very thin, usually 1 - 3 microns, and the deposited metal film is many times thicker, usually 5 - 50 microns, as the seed layer. In this technology, the bond between seed layer and substrate on the one hand and between deposited metal layer and seed layer on the other hand is problematic. While this is not necessarily a problem in the case of rigid substrates, such as silicon substrates, however, significant problems arise in the case of flexible substrates, such as films of organic polymer materials, as used in the field of security and / or value documents.
Technisches Problem der ErfindungTechnical problem of the invention
Der Erfindung liegt daher das technische Problem zu Grunde, ein Verfahren zur Herstellung einer für elektrischen Strom leitfähigen Schicht auf einem Substrat Sicherheits- und/oder Wertdokument anzugeben, wobei die leitfähige Schicht einen guten Haftverbund mit dem Substrat eingeht und gleichzeitig eine verbesserte Leitfähigkeit aufweist.The invention is therefore based on the technical problem of specifying a method for producing a conductive electrical layer layer on a substrate security and / or value document, wherein the conductive layer forms a good bond with the substrate and at the same time has an improved conductivity.
Grundzüge der Erfindung und bevorzugte Ausführungsformen Zur Losung dieses technischen Problems lehrt die Erfindung Verfahren zur Herstellung einer für elektrischen Strom leitfahigen Schicht auf einem Substrat mit den folgenden Verfahrensschritten: a) auf das Substrat wird eine Beschichtung aus einer ersten Zubereitung aufgebracht, welche ein organisches Bindemittel, ein wassπges oder organisches Losemittel und Partikel enthalt, b) das Substrat mit der Beschichtung wird einerBroad features of the invention and preferred embodiments To solve this technical problem, the invention teaches methods for producing a layer conductive for electrical current on a substrate with the following method steps: a) a coating of a first preparation is applied to the substrate, which is an organic binder, a wassπges or organic solvent and Contains particles, b) the substrate with the coating becomes one
Trocknungsverfahrensstufe unterzogen, wobei das Losemittel entfernt wird, c) das Substrat mit der getrockneten Beschichtung wird mit einer zweiten Zubereitung zur autokatalytischen stromlosen Metallbeschichtung behandelt.C) the substrate with the dried coating is treated with a second preparation for autocatalytic electroless metal plating.
Die Erfindung beruht auf der Erkenntnis, dass im Zuge der Trocknungsverfahrensstufe das Losemittel aus derThe invention is based on the recognition that in the course of the drying process stage, the solvent from the
Beschichtung ausgetrieben wird, wobei die Beschichtung zwischen den Partikeln und m der Bmdemittelmatnx ein Porensystem mit miteinander verbundenen offenen Poren ausbildet. Je nach Anteil Losemittel m der ersten Zubereitung ist der Volumenanteil der Poren groß oder klein. Im Extremfall der maximalen Porosität sind die elektrisch leitenden Partikel mit einer dünnen Schicht des Bindemittels umgeben, wobei die Partikel m Beruhrungsbereichen miteinander und mit dem Substrat verbunden bzw. verklebt sind. Die Porosität entspricht dann im Kern jener einer losen Schuttuhg der Partikel. Wesentlich für die Erfindung ist nun, dass in der Stufe c) eine Abscheidung nicht nur auf der äußeren Oberflache der Beschichtung, sondern auch auf inneren Oberflachen, nämlich in den Porenraumen, stattfindet. Die Poren werden gleichsam verfullt mit abgeschiedenem Metall und bilden ein Netzwerk aus Metall. Im Ergebnis wird eine leitfähige Struktur erhalten, die die Leitfähigkeit des eingesetzten Metalls aufweist, jedoch auf Grund der Bindemittelmatrix eine sehr gute Haftung auf dem Substrat zeigt.Coating is driven off, wherein the coating between the particles and m of Bmdemittelmatnx forms a pore system with interconnected open pores. Depending on the proportion of solvent m in the first preparation, the volume fraction of the pores is large or small. In the extreme case of the maximum porosity, the electrically conductive particles are surrounded by a thin layer of the binder, wherein the particles m contact areas are connected or bonded together and with the substrate. The porosity then corresponds to the core of a loose Schuttuhg the particles. It is essential for the invention that in step c) a deposition takes place not only on the outer surface of the coating, but also on inner surfaces, namely in the pore spaces. The pores become as it were filled with deposited metal and form a network of metal. As a result, a conductive structure is obtained which has the conductivity of the metal used, but exhibits a very good adhesion to the substrate due to the binder matrix.
Die offene Porosität der Beschichtung nach der Stufe b) und vor der Stufe c) , gemessen mit der Quecksilbermethode oder der Xylolmethode, liegt typischerweise im Bereich von 0,005 bis 0,45, meist von 0,02 bis 0,10.The open porosity of the coating after stage b) and before stage c), measured by the mercury method or the xylene method, is typically in the range of 0.005 to 0.45, usually 0.02 to 0.10.
Während als Substrat grundsätzlich jeden beliebige Material in Frage kommt, ist im Rahmen von Sicherheits- und/oder Wertdokumenten bevorzugt, wenn es sich um ein organisches Polymer, vorzugsweise ausgewählt aus der Gruppe bestehend aus "PC (Polycarbonat , insbesondere Bisphenol A Polycarbonat), PETWhile any material is fundamentally suitable as the substrate, in the context of security and / or value documents it is preferred if it is an organic polymer, preferably selected from the group consisting of "PC (polycarbonate, especially bisphenol A polycarbonate), PET
(Polyethylenglykolterephthalat) , PET-G, PET-F, PMMA (Polymethylmethacrylat) , ABS (Acrylnitril-Butadien- Styrol), PE (Polyethylen) , PP (Polypropylen), PI (Polyimid oder Poly-trans-Isopren) , PVC (Polyvinylchlorid) und(Polyethylene glycol terephthalate), PET-G, PET-F, PMMA (polymethyl methacrylate), ABS (acrylonitrile-butadiene-styrene), PE (polyethylene), PP (polypropylene), PI (polyimide or poly-trans-isoprene), PVC (polyvinyl chloride ) and
Copolymere solcher Polymere", handelt. Insbesondere PC ist bevorzugt auf Grund seiner in diesem technologischen Bereich bekannten vorteilhaften sonstigen Eigenschaften.Copolymers of such polymers. "In particular, PC is preferred because of its other advantageous properties known in this technological field.
Dann kann das Substrat beispielsweise eine Folie oder ein Folienverbund eines Sicherheits- und/oder Wertdokumentes, insbesondere eines Personalausweises, Reisepasses, einer ID-Karte, eines Zugangskontrollausweises, Visums, Tickets, Führerscheines, Kraftfahrzeugpapiers, personalisierten Wertpapiers, einer Kreditkarte, oder personalisierte Chipkarten, sein. Grundsatzlich kann mit leitfahigen Schichten eine beliebige elektrische Funktion realisiert werden. So können beispielsweise Leiterbahnen zur „drahtgebundenen" Übertragung von elektrischen Signalen und/oder elektrischer Energie ausgebildet und gestaltet sein. Es kann sich bei einer leitfahigen Schicht aber auch um eine Spulenstruktur, genauer gesagt Antennenstruktur handeln, insbesondere eine Antennenstruktur, die Teil eines RFID Schaltkreises ist.The substrate may then be, for example, a film or a foil composite of a security and / or value document, in particular an identity card, passport, ID card, access card, visa, ticket, driver's license, motor vehicle paper, personalized security, credit card, or personalized chip cards, be. Basically, any electrical function can be realized with conductive layers. For example, conductor tracks can be designed and configured for the "wired" transmission of electrical signals and / or electrical energy, but a conductive layer can also be a coil structure, more particularly an antenna structure, in particular an antenna structure which is part of an RFID circuit ,
Das in der ersten Zubereitung enthaltene Bindemittel kann grundsätzlich jedes beliebige m der Beschichtungstechnologie, einschließlich der Lacktechnologie und Drucktechnologie, üblicherweise eingesetzte Bindemittel oder Bmdemittelmischung sein, wobei der Fachmann ohne weiteres ein für ein bestimmtes Substratmaterial geeignetes und hiermit kompatibles Bindemittel auswählen wird. Auch wird die geeignete und durch den Fachmann ohne weiteres ausfuhrbare Wahl der Zusammensetzung der ersten Zubereitung von der Art der Aufbringung abhangen, beispielsweise von der eingesetzten Drucktechnologie.The binder contained in the first preparation may in principle be any of the coating technology, including paint technology and printing technology, commonly employed binder or binder compound, the skilled artisan will readily select a binder suitable and compatible with a particular substrate material. Also, the proper choice of composition of the first formulation, which can be readily made by one skilled in the art, will depend on the type of application, for example on the printing technology used.
Typische Schichtdicken einer Beschichtung der Stufe a) liegen im Bereich von 0,5 - 100 μm, insbesondere 5 - 50 μm, meist 10 - 30 μm.Typical layer thicknesses of a coating of stage a) are in the range of 0.5-100 .mu.m, in particular 5-50 .mu.m, usually 10-30 .mu.m.
Em gut geeignetes Bindemittel ist beispielsweise ein Polycarbonatderivat auf Basis eines gemmal disubstituierten Dihydroxydiphenylcycloalkans, welches ein mittleres Molekulargewicht (Gewichtsmittel) von mindestens 10.000, vorzugsweise von 20.000 bis 300.000, aufweisen kann. Im Einzelnen kann das Polycarbonatderivat funktionelle Carbonatstruktureinheiten der Formel (I) enthalten,A suitable binder, for example, a polycarbonate derivative based on a gem-disubstituted Dihydroxydiphenylcycloalkans, which may have a weight average molecular weight of at least 10,000, preferably from 20,000 to 300,000. In particular, the polycarbonate derivative may contain functional carbonate structural units of the formula (I)
Figure imgf000008_0001
Figure imgf000008_0001
(I' (I '
worin R1 und R2 unabhängig voneinander Wasserstoff, Halogen, bevorzugt Chlor oder Brom, Ci-Cg-Alkyl, C5-C6- Cycloalkyl, C6-Cio-Aryl, bevorzugt Phenyl, und C7-Ci2- Aralkyl, bevorzugt Phenyl-Ci-Cj-Alkyl, insbesondere Benzyl; m eine ganze Zahl von 4 bis 7, bevorzugt 4 oder 5; R3 und R4 für jedes X individuell wählbar, unabhängig voneinander Wasserstoff oder Ci-C6-Alkyl; X Kohlenstoff und n eine ganze Zahl größer 20 bedeuten, mit der Maßgabe, dass an mindestens einem Atom X, R3 und R4 gleichzeitig Alkyl bedeuten. Weiterhin bevorzugt ist es, wenn an 1 bis 2 Atomen X, insbesondere nur an einem Atom X, R3 und R4 gleichzeitig Alkyl sind. R3 und R4 können insbesondere Methyl sein. Die X-Atome in alpha-Stellung zu dem Diphenyl-substituierten C-Atom (Cl) können nicht dialkylsubstituiert sein. Die X-Atome in beta-Stellung zu Cl können mit Alkyl disubstituiert sein. Bevorzugt ist m = 4 oder 5. Das Polycarbonatderivat kann beispielsweise auf Basis von Monmeren, wie 4 , 4 ' - (3, 3, 5-trimethylcyclohexan- 1, 1-diyl) diphenol, 4 , 4 ' - (3, 3-dimethylcyclohexan-l, 1- diyl)diphenol, oder 4, 4 ' - (2, 4, 4-trimethylcyclopentan-l, 1- diyl ) diphenol gebildet sein. Ein solches Polycarbonatderivat kann beispielsweise gemäß der Literaturstelle DE 38 32 396.6 aus Diphenolen der Formel (Ia) hergestellt werden, deren Offenbarungsgehalt hiermit vollumfänglich in den Offenbarungsgehalt dieser Beschreibung aufgenommen wird. Es können sowohl ein Diphenol der Formel (Ia) unter Bildung von Homopolycarbonaten als auch mehrere Diphenole der Formel (Ia) unter Bildung von Copolycarbonaten verwendet werden (Bedeutung von Resten, Gruppen und Parametern, wie in Formel I) .wherein R 1 and R 2 are independently hydrogen, halogen, preferably chlorine or bromine, Ci-Cg-alkyl, C 5 -C 6 - cycloalkyl, C 6 -Cio-aryl, preferably phenyl, and C 7 -C 2 - aralkyl, preferably phenyl-Ci-Cj-alkyl, in particular benzyl; m is an integer from 4 to 7, preferably 4 or 5; R 3 and R 4 are individually selectable for each X, independently of one another hydrogen or C 1 -C 6 -alkyl; X is carbon and n is an integer greater than 20, with the proviso that on at least one atom X, R 3 and R 4 are simultaneously alkyl. It is further preferred if X, R 3 and R 4 are simultaneously alkyl at 1 to 2 atoms, in particular only at one atom. R 3 and R 4 may be in particular methyl. The X atoms in the alpha position to the diphenyl-substituted C atom (Cl) can not be dialkyl-substituted. The X atoms in beta position to Cl can be disubstituted with alkyl. Preferably, m = 4 or 5. The polycarbonate derivative can be prepared, for example, on the basis of monomers, such as 4,4 '- (3,3,5-trimethylcyclohexane-1,1-diyl) -diphenol. 4,4 ' - (3,3 dimethylcyclohexane-1,1-diyl) diphenol, or 4,4 '- (2,4,4-trimethylcyclopentane-1,1-diyl) diphenol. Such a polycarbonate derivative can be prepared, for example, according to the document DE 38 32 396.6 from diphenols of the formula (Ia), the disclosure of which is hereby incorporated in full in the disclosure of this description. It is possible to use both a diphenol of the formula (Ia) to form homopolycarbonates and a plurality of diphenols of the formula (Ia) to form copolycarbonates (meaning of radicals, groups and parameters, as in formula I).
Figure imgf000009_0001
Figure imgf000009_0001
(Ia)(Ia)
Ausserdem können die Diphenole der Formel (Ia) auch im Gemisch mit anderen Diphenolen, beispielsweise mit denen der Formel (Ib)In addition, the diphenols of the formula (Ia) may also be mixed with other diphenols, for example those of the formula (Ib)
HO - Z - OH (Ib) , zur Herstellung von hochmolekularen, thermoplastischen, aromatischen Polycarbonatderivaten verwendet werden. Geeignete andere Diphenole der Formel (Ib) sind solche, in denen Z ein aromatischer Rest mit 6 bis 30 C-Atomen ist, der einen oder mehrere aromatische Kerne enthalten kann, substituiert sein kann und aliphatische Reste oder andere cycloaliphatische Reste als die der Formel (Ia) oder Heteroatome als Brückenglieder enthalten kann. Beispiele der Diphenole der Formel (Ib) sind: Hydrochinon, Resorcin, Dihydroxydiphenyle, Bi- (hydroxyphenyl) -alkane, Bis- (hydroxyphenyl) -cycloalkane, Bis- (hydroxyphenyl) -sulfide, Bis- (hydroxyphenyl) -ether, Bis- (hydroxyphenyl) -ketone, Bis- (hydroxyphenyl) -sulfone, Bis- (hydroxyphenyl) - sulfoxide, alpha , alpha ' -Bis- (hydroxyphenyl) - diisopropylbenzole sowie deren kernalkyliette und kernhalogenierte Verbindungen. Diese und weitere geeignete Diphenole sind z.B. in den Literaturstellen US-A 3 028 365, 2 999 835, 3 148 172, 3 275 601, 2 991 273, 3 271 367, 3 062 781, 2 970 131 und 2 999 846, in denHO - Z - OH (Ib), be used for the preparation of high molecular weight, thermoplastic, aromatic polycarbonate derivatives. Suitable other diphenols of the formula (Ib) are those in which Z is an aromatic radical having 6 to 30 C atoms, which may contain one or more aromatic nuclei, may be substituted, and aliphatic radicals or cycloaliphatic radicals other than those of the formula (II) Ia) or heteroatoms may contain as bridge members. Examples of the diphenols of the formula (Ib) are: hydroquinone, resorcinol, dihydroxydiphenyls, bis (hydroxyphenyl) alkanes, bis (hydroxyphenyl) cycloalkanes, bis (hydroxyphenyl) sulfides, bis (hydroxyphenyl) ether, bis (hydroxyphenyl) ether, bis (hydroxyphenyl) ether, (hydroxyphenyl) ketones, bis (hydroxyphenyl) sulfones, bis (hydroxyphenyl) sulfoxides, alpha, alpha 'bis (hydroxyphenyl) diisopropylbenzenes and their nuclear alkylated and nucleated compounds. These and other suitable diphenols are described, for example, in US Pat. Nos. 3,028,365, 2,999,835, 3,148,172, 3,275,601, 2,991,273, 3,271,367, 3,062,781, 2,970,131 and 2,999,846, in US Pat the
Literaturstellen DE-A 1 570 703, 2 063 050, 2 063 052, 2 211 956, der Fr-A 1 561 518 und in der Monographie "H. Schnell, Chemistry and Physics of Polycarbonates, Interscience Publishers, New York 1964", beschrieben, welche hiermit vollumfänglich in den Offenbarungsgehalt der vorliegenden Anmeldung aufgenommen werden. Bevorzugte andere Diphenole sind beispielsweise: 4,4'- Dihydroxydiphenyl, 2, 2-Bis- (4-hydroxyphenyl) -propan, 2,4- Bis~ (4-hydroxyphenyl) -2-methylbutan, 1, 1-Bis- (4- hydroxyphenyl ) -cyclohexan, alpha , alpha -Bis- (4- hydroxyphenyl) -p-diisopropylbenzol , 2 , 2-Bis- (3-methyl-4- hydroxyphenyl) -propan, 2,2-Bis- (3-chlor-4-hydroxyphenyl) - propan, Bis- (3, 5-dimethyl-4-hydroxyphenyl ) -methan, 2,2- Bxs- (3, 5-dimethyl-4-hydroxyphenyl) -propan, Bis- (3, 5- dimethyl-4-hydroxyphenyl) -sulfon, 2, 4-Bis- (3, 5-dimethyl-4- hydroxyphenyl) -2-methylbutan, 1, 1-Bis- ( 3, 5-dimethyl-4- hydroxyphenyl) -cyclohexan, alpha , alpha -Bis- (3, 5- dimethyl-4-hydroxyphenyl) -p-diisopropylbenzol , 2, 2-Bis- (3, 5-dichlor-4-hydroxyphenyl) -propan und 2, 2-Bis- (3, 5- dibrom-4-hydroxyphenyl) -propan. Besonders bevorzugte Diphenole der Formel (Ib) sind beispielsweise: 2,2-Bis-(4- hydroxyphenyl) -propan, 2, 2-Bis- (3, 5-dimethyl-4- hydroxyphenyl) -propan, 2, 2-Bis- (3, 5-dichlor-4- hydroxyphenyl ) -propan, 2,2-Bis-(3, 5-dibrom-4- hydroxyphenyl) -propan und 1, 1-Bis- (4-hydroxyphenyl) - cyclohexan. Insbesondere ist 2, 2-Bis- (4 -hydroxyphenyl ) - propan bevorzugt. Die anderen Diphenole können sowohl einzeln als auch im Gemisch eingesetzt werden. Das molare Verhältnis von Diphenolen der Formel (Ia) zu den gegebenenfalls mitzuverwendenden anderen Diphenolen der Formel (Ib), soll zwischen 100 Mol-% (Ia) zu 0 Mol-% (Ib) und 2 Mol-% (Ia) zu 98 Mol-% (Ib), vorzugsweise zwischen 100 Mol-% (Ia) zu 0 Mol-% (Ib) und 10 Mol-% (Ia) zu 90 Mol-% (Ib) und insbesondere zwischen 100 Mol-% (Ia) zu 0 Mol-% (Ib) und 30 Mol-% (Ia) zu 70 Mol-% (Ib) liegen. Die hochmolekularen Polycarbonatderivate aus den Diphenolen der Formel (Ia), gegebenenfalls in Kombination mit anderen Diphenolen, können nach den bekannten Polycarbonat- Herstellungsverfahren hergestellt werden. Dabei können die verschiedenen Diphenole sowohl statistisch als auch blockweise miteinander verknüpft sein. Die demgemäß eingesetzten Polycarbonatderivate können in an sich bekannter Weise verzweigt sein. Wenn die Verzweigung gewünscht wird, kann sich in bekannter Weise durch Einkondensieren geringer Mengen, vorzugsweise Mengen zwischen 0,05 und 2,0 Mol-% (bezogen auf eingesetzte Diphenole) , an drei- oder mehr als dreifunktionellenReferences DE-A 1 570 703, 2 063 050, 2 063 052, 2 211 956, FR-A 1 561 518 and in the monograph "H. Schnell, Chemistry and Physics of Polycarbonates, Interscience Publishers, New York 1964", which are hereby incorporated in full in the disclosure of the present application. Preferred other diphenols are, for example: 4,4'-dihydroxydiphenyl, 2,2-bis (4-hydroxyphenyl) propane, 2,4-bis (4-hydroxyphenyl) -2-methylbutane, 1, 1-bis- ( 4-hydroxyphenyl) -cyclohexane, alpha, alpha -bis (4-hydroxyphenyl) -p-diisopropylbenzene, 2,2-bis (3-methyl-4-) hydroxyphenyl) -propane, 2,2-bis (3-chloro-4-hydroxyphenyl) propane, bis (3,5-dimethyl-4-hydroxyphenyl) -methane, 2,2-Bxs- (3, 5- dimethyl-4-hydroxyphenyl) -propane, bis (3, 5-dimethyl-4-hydroxyphenyl) sulfone, 2,4-bis (3,5-dimethyl-4-hydroxyphenyl) -2-methylbutane, 1,1 Bis- (3,5-dimethyl-4-hydroxyphenyl) -cyclohexane, alpha, alpha -bis (3,5-dimethyl-4-hydroxyphenyl) -p-diisopropylbenzene, 2,2-bis (3,5) dichloro-4-hydroxyphenyl) -propane and 2, 2-bis (3, 5-dibromo-4-hydroxyphenyl) -propane. Particularly preferred diphenols of the formula (Ib) are, for example: 2,2-bis (4-hydroxyphenyl) propane, 2,2-bis- (3,5-dimethyl-4-hydroxyphenyl) -propane, 2,2-bis - (3, 5-dichloro-4-hydroxyphenyl) -propane, 2,2-bis (3,5-dibromo-4-hydroxyphenyl) -propane and 1,1-bis (4-hydroxyphenyl) -cyclohexane. In particular, 2, 2-bis (4-hydroxyphenyl) propane is preferred. The other diphenols can be used both individually and in a mixture. The molar ratio of diphenols of the formula (Ia) to the optionally used other diphenols of the formula (Ib) should be between 100 mol% (Ia) to 0 mol% (Ib) and 2 mol% (Ia) to 98 mol -% (Ib), preferably between 100 mol% (Ia) to 0 mol% (Ib) and 10 mol% (Ia) to 90 mol% (Ib) and especially between 100 mol% (Ia) to 0 mol% (Ib) and 30 mol% (Ia) to 70 mol% (Ib). The high molecular weight polycarbonate derivatives of the diphenols of the formula (Ia), optionally in combination with other diphenols, can be prepared by the known polycarbonate production processes. The various diphenols can be linked together both statistically and in blocks. The polycarbonate derivatives used accordingly can be used per se be branched known manner. If the branching is desired, by condensing small amounts, preferably amounts between 0.05 and 2.0 mol% (based on diphenols used), of trifunctional or more than trifunctional in a known manner
Verbindungen, insbesondere solchen mit drei oder mehr als drei phenolischen Hydroxylgruppen, erreicht werden. Einige Verzweiger mit drei oder mehr als drei phenolischen Hydroxylgruppen sind: Phloroglucin, 4 , 6-Dimethyl-2, 4, 6- tri- (4-hydroxyphenyl) -hepten-2, 4, β-Dimethyl-2, 4 , 6-tri- (4- hydroxyphenyl) -heptan, 1,3, 5-Tri- (4-hydroxyphenyl) -benzol, 1, 1, 1-Tri- (4-hydroxyphenyl) -ethan, Tri- (4-hydroxyphenyl) - phenylmethan, 2,2-Bis-[4,4-bis- (4-hydroxyphenyl) - cyclohexyl] -propan, 2, 4 -Bis- (4-hydroxyphenyl-isopropyl) - phenol, 2, 6-is- (2-hydroxy-5-methyl-benzyl) -4 -methylphenol, 2- (4-hydroxyphenyl) -2- (2, 4-dihydroxyphenyl) -propan, Hexa- [4- (4-hydroxyphenyl-isoρropyl) -phenyl ] - orthoterephthalsäureester, Tetra- (4-hydroxyρhenyl ) -methan, Tetra- [4- ( 4-hydroxyphenyl-isopropyl ) phenoxy] -methan und 1, 4-Bis- [4 ' , 4 ' ' -dihydroxytriphenyl) -methyl] -benzol. Einige der sonstigen dreifunktionellen Verbindungen sind 2,4- Dihydroxybenzoesäure, Trimesinsäure, Cyanurchlorid und 3, 3-Bi s- (3-methyl-4-hydroxyphenyl) -2-oxo-2, 3-dihydroindol . Als Kettenabbrecher zur an sich bekannten Regelung des Molekulargewichts der Polycarbonatderivate dienen monofunktionelle Verbindungen in üblichen Konzentraten. Geeignete Verbindungen sind z.B. Phenol, tert.- Butylphenole oder andere Alkyl-substituierte Phenole. Zur Regelung des Molekulargewichts sind insbesondere kleine Mengen Phenole der Formel (Ic) geeignet
Figure imgf000013_0001
Compounds, especially those having three or more than three phenolic hydroxyl groups, can be achieved. Some branching agents having three or more than three phenolic hydroxyl groups are: phloroglucinol, 4,6-dimethyl-2,4,4-tris (4-hydroxyphenyl) -hepten-2, 4, β-dimethyl-2, 4, 6 tri- (4-hydroxyphenyl) heptane, 1,3,5-tri- (4-hydroxyphenyl) -benzene, 1,1,1-tri- (4-hydroxyphenyl) -ethane, tri- (4-hydroxyphenyl) - phenylmethane, 2,2-bis [4,4-bis (4-hydroxyphenyl) cyclohexyl] propane, 2,4-bis (4-hydroxyphenyl-isopropyl) -phenol, 2, 6-is- (2 -hydroxy-5-methyl-benzyl) -4-methylphenol, 2- (4-hydroxyphenyl) -2- (2,4-dihydroxyphenyl) -propane, hexa- [4- (4-hydroxyphenyl-iso-propyl) -phenyl] - orthoterephthalic acid ester, tetra (4-hydroxy-phenyl) -methane, tetra- [4- (4-hydroxyphenyl-isopropyl) -phenoxy] -methane and 1,4-bis- [4 ', 4 "-dihydroxytriphenyl) -methyl] -benzene , Some of the other trifunctional compounds are 2,4-dihydroxybenzoic acid, trimesic acid, cyanuric chloride and 3,3-bis (3-methyl-4-hydroxyphenyl) -2-oxo-2,3-dihydroindole. As chain terminators known per se regulation of the molecular weight of the polycarbonate derivatives are monofunctional compounds in conventional concentrates. Suitable compounds are, for example, phenol, tert-butylphenols or other alkyl-substituted phenols. For controlling the molecular weight, in particular small amounts of phenols of the formula (Ic) are suitable
Figure imgf000013_0001
( I c ) worin(I c) wherein
R einen verzweigten C8- und/oder C9-Alkylrest darstellt. Bevorzugt ist im Alkylrest R der Anteil an Ci-13-Protonen zwischen 47 und 89 % und der Anteil der CH- und CH2- Protonen zwischen 53 und 11 %; ebenfalls bevorzugt ist R m o- und/oder p-Stellung zur OH-Gruppe, und besonders bevorzugt die obere Grenze des ortho-Anteils 20 %. Die Kettenabbrecher werden im allgemeinen in Mengen von 0,5 bis 10, bevorzugt 1,5 bis 8 Mol-%, bezogen auf eingesetzte Diphenole, eingesetzt. Die Polycarbonatderivate können vorzugsweise nach dem Phasengrenzflachenverhalten (vgl. H. Schnell "Chemistry and Physics of Polycarbonates", Polymer Reviews, Vol. IX, Seite 33ff., Interscience Publ . 1964) in an sich bekannter Weise hergestellt werden. Hierbei werden die Diphenole der Formel (Ia) in wassrig alkalischer Phase gelost. Zur Herstellung von Copolycarbonaten mit anderen Diphenolen werden Gemische von Diphenolen der Formel (Ia) und den anderen Diphenolen, beispielsweise denen der Formel (Ib), eingesetzt. Zur Regulierung des Molekulargewichts können Kettenabbrecher z.B. der Formel (Ic) zugegeben werden. Dann wird in Gegenwart einer inerten, vorzugsweise Polycarbonat losenden, organischen Phase mit Phosgen nach der Methode der Phasengrenzflachenkondensation umgesetzt. Die Reaktionstemperatur liegt zwischen O0C und 4O0C. Die gegebenenfalls mitverwendeten Verzweiger (bevorzugt 0,05 bis 2,0 Mol-%) können entweder mit den Diphenolen in der wässrig alkalischen Phase vorgelegt werden oder in dem organischen Lösungsmittel gelöst vor Phosgenierung zugegeben werden. Neben den Diphenolen der Formel (Ia) und 5 gegebenenfalls anderen Diphenolen (Ib) können auch deren Mono- und/oder Bis-chlorkohlensäureester mitverwendet werden, wobei diese in organischen Lösungsmitteln gelöst zugegeben werden. Die Menge an Kettenabbrechern sowie an Verzweigern richtet sich dann nach der molaren Menge vonR is a branched C 8 - and / or C 9 -alkyl radical. Preferably, in the alkyl radical R, the proportion of Ci-1 3 protons between 47 and 89% and the proportion of CH and CH 2 - protons between 53 and 11%; Also preferred is R m o- and / or p-position to the OH group, and more preferably the upper limit of the ortho-portion is 20%. The chain terminators are generally used in amounts of 0.5 to 10, preferably 1.5 to 8 mol%, based on diphenols used. The polycarbonate derivatives may preferably be prepared in a manner known per se according to the phase boundary behavior (compare H. Schnell "Chemistry and Physics of Polycarbonates", Polymer Reviews, Vol. IX, page 33 et seq., Interscience Publ. In this case, the diphenols of the formula (Ia) are dissolved in an aqueous alkaline phase. For the preparation of copolycarbonates with other diphenols, mixtures of diphenols of the formula (Ia) and the other diphenols, for example those of the formula (Ib), are used. To regulate the molecular weight, chain terminators of, for example, the formula (Ic) can be added. Then, in the presence of an inert, preferably polycarbonate losenden, organic phase reacted with phosgene by the method of interfacial condensation. The reaction temperature is between 0 0 C and 40 0 C. The optionally used branching agents (preferably 0.05 to 2.0 mol%) can either be initially charged with the diphenols in the aqueous alkaline phase or added dissolved in the organic solvent prior to phosgenation. In addition to the diphenols of the formula (Ia) and, if appropriate, other diphenols (Ib), their mono- and / or bis-chlorocarbonic acid esters may also be used, these being added dissolved in organic solvents. The amount of chain terminators and branching agents then depends on the molar amount of
/ 10 Diphenolat-Resten entsprechend Formel (Ia) und gegebenenfalls Formel (Ib); bei Mitverwendung von Chlorkohlensäureestern kann die Phosgenmenge in bekannter Weise entsprechend reduziert werden. Geeignete organische Lösungsmittel für die Kettenabbrecher sowie gegebenenfalls 15 für die Verzweiger und die Chlorkohlensäureester sind beispielsweise Methylenchlorid, Chlorbenzol, insbesondere Mischungen aus Methylenchlorid und Chlorbenzol. Gegebenenfalls können die verwendeten Kettenabbrecher und Verzweiger im gleichen Solvens gelöst werden. Als 20 organische Phase für die Phasengrenzflächenpoly-/ 10 diphenolate residues corresponding to formula (Ia) and optionally formula (Ib); When using chloroformates the amount of phosgene can be reduced accordingly in a known manner. Suitable organic solvents for the chain terminators and optionally for the branching agents and the chloroformates are, for example, methylene chloride, chlorobenzene, in particular mixtures of methylene chloride and chlorobenzene. Optionally, the chain terminators and branching agents used can be dissolved in the same solvent. As an organic phase for the interfacial poly
/ kondensation dient beispielsweise Methylenchlorid,/ condensation serves, for example, methylene chloride,
Chlorbenzol sowie Mischungen aus Methylenchlorid und Chlorbenzol. Als wässrige alkalische Phase dient beispielsweise NaOH-Lösung. Die Herstellung der 25 Polycarbonatderivate nach dem Phasengrenzflächenverfahren kann in üblicher Weise durch Katalysatoren wie tertiäre Amine, insbesondere tertiäre aliphatische Amine wie Tributylamin oder Triethylamin katalysiert werden; die Katalysatoren können in Mengen von 0,05 bis 10 Mol-%, 30 bezogen auf Mole an eingesetzten Diphenolen, eingesetzt werden. Die Katalysatoren können vor Beginn der Phosgemerung oder wahrend oder auch nach der Phosgemerung zugesetzt werden. Die Polycarbonatderivate können nach dem bekannten Verfahren in homogener Phase, dem sogenannten "Pyπdinverfahren" sowie nach dem bekannten Schmelzeumesterungsverfahren unter Verwendung von beispielsweise Diphenylcarbonat anstelle von Phosgen hergestellt werden. Die Polycarbonatderivate können linear oder verzweigt sein, sie sind Homopolycarbonate oder Copolycarbonate auf Basis der Diphenole der Formel (Ia). Durch die beliebige Komposition mit anderen Diphenolen, insbesondere mit denen der Formel (Ib) lassen sich die Polycarbonateigenschaften in gunstiger Weise variieren. In solchen Copolycarbonaten sind die Diphenole der Formel (Ia) in Mengen von 100 Mol-% bis 2 Mol-%, vorzugsweise in Mengen von 100 Mol-% bis 10 Mol-% und insbesondere in Mengen von 100 Mol-% bis 30 Mol-%, bezogen auf die Gesamtmenge von 100 Mol-% an Diphenolemheiten, in Polycarbonatdeπvaten enthalten. Das Polycarbonatdeπvat ist beispielsweise ein Copolymer enthaltend, insbesondere bestehend aus, Monomereinheiten Ml auf Basis der FormelChlorobenzene and mixtures of methylene chloride and chlorobenzene. The aqueous alkaline phase used is, for example, NaOH solution. The preparation of the polycarbonate derivatives by the interfacial process can be catalyzed in a conventional manner by catalysts such as tertiary amines, in particular tertiary aliphatic amines such as tributylamine or triethylamine; the catalysts can be used in amounts of from 0.05 to 10 mol%, based on moles of diphenols used. The catalysts can be used before starting the Phosphatization or during or after the Phosgemerung be added. The polycarbonate derivatives can be prepared by the known method in a homogeneous phase, the so-called "Pyπdinverfahren" and by the known melt transesterification using, for example, diphenyl carbonate instead of phosgene. The polycarbonate derivatives may be linear or branched, they are homopolycarbonates or copolycarbonates based on the diphenols of the formula (Ia). By arbitrary composition with other diphenols, in particular with those of the formula (Ib), the polycarbonate properties can be varied in a favorable manner. In such copolycarbonates, the diphenols of the formula (Ia) are present in amounts of from 100 mol% to 2 mol%, preferably in amounts of from 100 mol% to 10 mol% and in particular in amounts of from 100 mol% to 30 mol% %, based on the total amount of 100 mol% of Diphenolemheiten contained in Polycarbonatedeπvaten. The polycarbonate derivative is, for example, a copolymer containing, in particular consisting of, monomer units M1 based on the formula
(Ib), insbesondere Bisphenol A, sowie Monomereinheiten M2 auf Basis des geminal disubstituierten Dihydroxydiphenylcycloalkans, vorzugsweise des 4,4 - ( 3, 3, 5-trimethylcyclohexan-l, 1-diyl) diphenols, ist, wobei das Molverhaltnis M2/M1 vorzugsweise großer als 0,3, insbesondere großer als 0,4, beispielsweise großer als 0,5 ist.(Ib), in particular bisphenol A, and monomer units M2 based on the geminally disubstituted dihydroxydiphenylcycloalkane, preferably of the 4,4 - (3, 3, 5-trimethylcyclohexan-l, 1-diyl) diphenol, wherein the molar ratio of M2 / M1 is preferably greater than 0.3, in particular greater than 0.4, for example greater than 0.5.
Als Losemittel der ersten Zubereitung kommen neben Wasser alle in der Beschichtungstechnologie üblichen organischen Losemittel und Losemittelmischungen, auch mit Wasser, in Frage. Lediglich beispielhaft seien vorzugsweise halogenfreie organische Lösungsmittel genannt. In Frage kommen u.a. aliphatische, cycloaliphatische, aromatische Kohlenwasserstoffe, wie Mesitylen, 1,2,4- Trimethylbenzol, Cumol und Solvent Naptha, Toluol, Xylol; (organische) Ester, wie Methylacetat , Ethylacetat, Butylacetat, Methoxypropylacetat, Ethyl-3-ethoxypropionat , Butyglykolacetat . Bevorzugt sind Mesitylen, 1,2,4- Trimethylbenzol, Cumol und Solvent Naptha, Toluol, Xylol, Essigsäuremethylester, Essigsäureethylester,As a solvent of the first preparation come in addition to water all common in coating technology organic solvents and solvent mixtures, including with water, in Question. By way of example only, preferably halogen-free organic solvents may be mentioned. Suitable compounds include aliphatic, cycloaliphatic, aromatic hydrocarbons, such as mesitylene, 1,2,4-trimethylbenzene, cumene and solvent naphtha, toluene, xylene; (organic) esters such as methyl acetate, ethyl acetate, butyl acetate, methoxypropyl acetate, ethyl 3-ethoxypropionate, butyglycol acetate. Preference is given to mesitylene, 1,2,4-trimethylbenzene, cumene and solvent naphtha, toluene, xylene, methyl acetate, ethyl acetate,
Methoxypropylacetat, Ethyl-3-ethoxypropionat , ein oder mehrwertige Cl-ClO Alkyl-, Cycloalkyl-, Aryl- (C6-C10), oder Aralkylalkohole (C6-C10), linear oder verzweigt. Ganz besonders bevorzugt sind: Mesitylen (1,3,5- Trimethylbenzol), 1, 2, 4-Trimethylbenzol, Cumol (2-Methoxypropyl acetate, ethyl 3-ethoxypropionate, mono- or polyvalent C 1 -C 10 -alkyl, cycloalkyl, aryl- (C 6 -C 10), or aralkyl alcohols (C 6 -C 10), linear or branched. Most particularly preferred are: mesitylene (1,3,5-trimethylbenzene), 1,2,4-trimethylbenzene, cumene (2
Phenylpropan) , Solvent Naptha und Ethyl-3-ethoxypropionat . Ein für das vorstehende im Detail erläuterte Bindemittel geeignetes Lösungsmittelgemisch umfasst beispielsweise A) 0 bis 10 Gew.-%, vorzugsweise 1 bis 5 Gew.-%, insbesondere 2 bis 3 Gew.-%, Mesitylen, B) 10 bis 50 Gew.-%, vorzugsweise 25 bis 50 Gew.-%, insbesondere 30 bis 40 Gew.-%, l-Methoxy-2-propanolacetat, C) 0 bis 20 Gew.-%, vorzugsweise 1 bis 20 Gew.-%, insbesondere 7 bis 15 Gew.- %, 1, 2, 4-Trimethylbenzol, D) 10 bis 50 Gew.-%, vorzugsweise 25 bis 50 Gew.-%, insbesondere 30 bis 40 Gew.-%, Ethyl-3-ethoxypropionat, E) 0 bis 10 Gew.-%, vorzugsweise 0,01 bis 2 Gew.-%, insbesondere 0,05 bis 0,5 Gew.-%, Cumol, und 0 bis 80 Gew.-%, vorzugsweise 1 bis 40 Gew.-%, insbesondere 15 bis 25 Gew.-%, Solvent Naphtha, wobei die Summe der Komponenten A) bis E) stets 100 Gew.-% ergibt . Die erste Zubereitung enthalt vorzugsweise einen Anteil an Losemittel, vorzugsweise organischem Losemittel, von 2 - 30 Gew.%, insbesondere 4 bis 10 Gew.-%, bezogen auf das Gesamtgewicht der Zubereitung.Phenylpropane), solvent naptha and ethyl 3-ethoxypropionate. A solvent mixture suitable for the above-described binder in detail comprises, for example, A) 0 to 10% by weight, preferably 1 to 5% by weight, in particular 2 to 3% by weight, mesitylene, B) 10 to 50% by weight. %, preferably 25 to 50 wt .-%, in particular 30 to 40 wt .-%, l-methoxy-2-propanol acetate, C) 0 to 20 wt .-%, preferably 1 to 20 wt .-%, in particular 7 to 15% by weight, 1, 2, 4-trimethylbenzene, D) 10 to 50% by weight, preferably 25 to 50% by weight, in particular 30 to 40% by weight, of ethyl 3-ethoxypropionate, E) 0 to 10 wt .-%, preferably 0.01 to 2 wt .-%, in particular 0.05 to 0.5 wt .-%, cumene, and 0 to 80 wt .-%, preferably 1 to 40 wt. %, in particular 15 to 25 wt .-%, solvent naphtha, wherein the sum of the components A) to E) always gives 100 wt .-%. The first preparation preferably contains a proportion of solvent, preferably organic solvent, of from 2 to 30% by weight, in particular from 4 to 10% by weight, based on the total weight of the preparation.
Die Partikel der ersten Zubereitung können grundsätzlich ebenfalls beliebige Komposition aufweisen. Es kann sich um anorganische nicht-metallische oder metallische Partikel, beispielsweise aus Metalloxiden, wie SiO2 oder TiO2, Ruß, Silber, Gold, Titan, Zinn, Palladium, Kupfer, oder sonstige in der Beschichtungstechnologie bekannte anorganische Füllstoffe, handeln. Es können aber auch Polymerpartikel eingesetzt werden, wie sie in der Beschichtungstechnologie beispielsweise als organische Füllstoffe bekannt sind.The particles of the first preparation may in principle also have any composition. They may be inorganic non-metallic or metallic particles, for example metal oxides such as SiO 2 or TiO 2, carbon black, silver, gold, titanium, tin, palladium, copper or other inorganic fillers known in coating technology. However, it is also possible to use polymer particles, for example those known in coating technology as organic fillers.
Die erste Zubereitung weist vorzugsweise einen Anteil von 30 - 99 Gew.-%, insbesondere 70 bis 95 Gew.-%, an Partikeln, vorzugsweise elektrisch leitfahigen Partikeln, insbesondere Metallpartikeln, beispielsweise Silberpartikeln, auf.The first preparation preferably has a fraction of 30-99% by weight, in particular 70 to 95% by weight, of particles, preferably electrically conductive particles, in particular metal particles, for example silver particles.
Im Rahmen der Erfindung ist es bevorzugt, wenn die Partikelgroße bei zumindest 90%, bezogen auf das Volumen, der eingesetzten Partikel im Bereich zwischen 0, 1 und 30 μm, insbesondere zwischen 2 und 20 μm, liegt. Die Partikelgroßenverteilung kann monomodal sein, es können aber auch Mischungen von Partikeln verschiedener Partikelgroßen bzw. Partikelgroßenverteilungen eingerichtet sein. Beispielsweise können in Verbindung miteinander dlO-Werte von 0,5 bis 5 μm und d90-Werte von 5 bis 30 μm eingerichtet sein. Partikelgroßen und Partikelgroßenverteilungen, einschließlich dlO- und d90- Werte lassen sich über statische Laserbeugungsmethoden, beispielsweise mit einem LS Particle Size AnalyserIn the context of the invention, it is preferred if the particle size is at least 90%, based on the volume, of the particles used in the range between 0, 1 and 30 .mu.m, in particular between 2 and 20 microns. The particle size distribution can be monomodal, but it can also be set up mixtures of particles of different particle sizes or particle size distributions. For example, in conjunction dlO values of 0.5 to 5 .mu.m and d90 values of 5 to 30 .mu.m can be set up. Particle size and particle size distributions, including d10 and d90 values, can be determined by static laser diffraction methods, for example with an LS Particle Size Analyzer
(Beckmann Coulter) nach Standard Verfahren und Standard Auswertungssoftware messen.(Beckmann Coulter) according to standard procedures and standard evaluation software.
Geeignete fertige erste Zubereitungen sind beispielsweise einschlagig bekannte Zubereitungen wie Conductor Paste DuPont 5029 oder 5028 oder 5033.Suitable finished first preparations are, for example, well-known preparations such as Conductor Paste DuPont 5029 or 5028 or 5033.
Die Aufbringung der ersten Zubereitung kann mit allen einschlagig bekannten Druckverfahren (z.B. Durch-, Tief-, Hoch- und Flachdruck aber auch Tmtenstrahldruck, insbesondere Siebdruck) erfolgen. Aber auch andere in der Beschichtungstechnologie üblichen Aufbringungsverfahren, wie Spritzen, Streichen, Rakeln, Tauchen, etc. sind einsetzbar. Bevorzugt sind Siebdruck und Schablonendruck.The application of the first preparation can be carried out with all well-known printing processes (for example through-, gravure-, portrait- and planographic printing but also inkjet printing, in particular screen printing). However, other application methods customary in coating technology, such as spraying, brushing, knife coating, dipping, etc. can also be used. Preference is given to screen printing and stencil printing.
Die Stufe b) kann für 0,1 bis 100 mm., insbesondere 1 bis 30 mm., bei 30 - 200 0C, insbesondere 60 bis 130 °C, durchgeführt werden. Es ist möglich im Rahmen der Stufe b) auch an Stelle der Erwärmung oder zusätzlich hierzu einen Unterdruck, beispielsweise im Bereich von 10 bis 800 mBar (absolut), insbesondere 100 bis 600 mBar, einzurichten.The stage b) can be carried out for 0.1 to 100 mm., In particular 1 to 30 mm., At 30 - 200 0 C, in particular 60 to 130 ° C. It is possible in the context of stage b) also in place of the heating or in addition to a negative pressure, for example in the range of 10 to 800 mbar (absolute), in particular 100 to 600 mbar set up.
Die zweite Zubereitung kann eine wassπge Losung mit einem Metallsalz und einem Reduktionsmittel, sowie optional zusätzlich mit einem Komplexbildner und/oder einem oder mehreren Hilfsstoffen sein. Das Metallsalz kann ein Salz des Ag, Cu, Pd oder Co sein. Der Begriff des Salzes umfasst dabei auch Komplexe der Metalle bzw. Metallionen. Die Konzentration des Metallsalzes kann im Bereich von 0,05 - 50 g/l, vorzugsweise 0,3 - 10 g/l, insbesondere 0,4 - 2,0 g/l, bezogen auf das Metall, liegen. AlsThe second preparation may be a wet solution with a metal salt and a reducing agent, and optionally additionally with a complexing agent and / or one or more auxiliaries. The metal salt can be a salt of Ag, Cu, Pd or Co. The term salt also includes complexes of metals or metal ions. The concentration of the metal salt may be in the range of 0.05-50 g / l, preferably 0.3-10 g / l, especially 0.4-2.0 g / l, based on the metal. When
Gegemonenlieferant bzw. Komplexbildner kommen in Frage EDTA, Rochelle s Salz, Zitronensaure, Citrate, Weinsaure, Propionsäure, Acetate, Milchsaure, Pyrophosphate, Pyridium-3-Sulfonsaure, Tartrate, Phosphate, Borate, cyanide, Thiocyanide, Halogenide, Triethylentetramm, und Methylamin. Bei den vorstehenden Salzen können die eingesetzten Gegenionen beispielsweise Na+ oder K+ sein. Als Reduktionsmittel kommen in Frage Dextrose, Glyoxal, Rochelle s Salze, kristallisierter Zucker, invertierter Zucker, Co-Ionen, Hydride, Glucamme, Metallhydride,Counteremergent or complexing agents include EDTA, Rochelle's salt, citric acid, citrates, tartaric acid, propionic acid, acetates, lactic acid, pyrophosphates, pyridium-3-sulfonic acid, tartrates, phosphates, borates, cyanides, thiocyanides, halides, triethylenetetram, and methylamine. In the case of the above salts, the counterions used can be, for example, Na + or K + . Suitable reducing agents are dextrose, glyoxal, Rochelle's salts, crystallized sugar, inverted sugar, co-ions, hydrides, glucams, metal hydrides,
Hydrazine, Hydrazinsulfate, Borane, wie Dimethylammboran, Diethylaminboran, Triethylammboran, Formaldehyd, Hypophosphite, Gluconate, mehrwertige Alkohole, usw. Als Hilfsmittel kommen oberflächenaktive Substanzen, insbesondere nicht-ionisch, beispielsweise mitHydrazines, hydrazine sulfates, boranes, such as dimethylammborane, diethylamineborane, triethylammborane, formaldehyde, hypophosphites, gluconates, polyhydric alcohols, etc. Surface-active substances, in particular non-ionic, for example, are used as auxiliary agents
Ethylenglycol-Monomeremheiten bzw. Nonylphenolethoxylat in Frage, ebenso wie kommerziell erhaltliche Mittel, wie Ethylan 1008W, HBl, D253, CO35, CPG660, 1005, CD127P/N, A4, BCD42 oder alle unter der Bezeichnung Berol vertriebene Mittel (alle von Akzo Nobel) . Das oberflächenaktive Mittel kann in Konzentrationen von 0,01 - 10 g/l, insbesondere 0,1 - 1,0 g/l, bezogen auf die gesamte Zubereitung, vorliegen. Als Hilfsmittel kommen auch Polymere, wie Polyethylenglycol mit einem mittleren Molekulargewicht von 100 - 4000 da in Frage. Dies können in Konzentrationen von 0,01 - 10 g/l, insbesondere 0,1 - 1,0 g/l, bezogen auf die Zubereitung, vorliegen. Weiterhin können anorganische oder organische Säuren, wie Borsäure, im Mengen von 0,1 - 300g/l, bezogen auf die Zubereitung, vorgesehen sein. Ebenso können organische oder anorganische Basen, wie Kalium- Natrium-, Lithium-,Ethylene glycol monomer units or nonylphenol ethoxylate, as well as commercially available agents, such as Ethylan 1008W, HB1, D253, CO35, CPG660, 1005, CD127P / N, A4, BCD42 or all agents sold under the name Berol (all from Akzo Nobel) , The surfactant may be present in concentrations of 0.01-10 g / l, especially 0.1-1.0 g / l, based on the total preparation. Also suitable as auxiliaries are polymers, such as polyethylene glycol having an average molecular weight of 100-4000. This can be done in concentrations of 0.01 - 10 g / l, especially 0.1 - 1.0 g / l, based on the preparation. Furthermore, inorganic or organic acids, such as boric acid, in amounts of 0.1 to 300 g / l, based on the preparation may be provided. Likewise, organic or inorganic bases, such as potassium, sodium, lithium,
Calcium-, oder Magnesiumhydroxid vorgesehen sein. Diese sind dann in einer Menge zugegen, die den pH vorzugsweise auf 5,0 - 8,5, vorzugsweise 6,0 - 7,5, insbesondere 6,0 - 7,2, speziell 6,8 - 7,2, einstellt. Im Rahmen der Erfindung ist es auch möglich, den pH Wert mittels geeigneter fachüblicher Puffer zu stabilisieren. Konkrete geeignete zweite Zusammensetzungen sind ansonsten in der Literaturstelle WO 2006/065221 Al beschrieben.Calcium, or magnesium hydroxide may be provided. These are then present in an amount which preferably adjusts the pH to 5.0-8.5, preferably 6.0-7.5, especially 6.0-7.2, especially 6.8-7.2. In the context of the invention, it is also possible to stabilize the pH value by means of suitable customary buffers. Concrete, suitable second compositions are otherwise described in the document WO 2006/065221 Al.
Die Stufe c) wird vorzugsweise wenige 0C, beispielsweise 2 - 5 °C, unterhalb der Trϋbungstemperatur der zweiten Zubereitung durchgeführt. Bevorzugte Badtemperaturen liegen über 20 0C, besser über 30 0C, insbesondere über 50 0C. Die Badtemperatur sollte zweckmäßigerweise unter 100 0C, besser unter 80 0C liegen.The step c) is preferably carried out a few 0 C, for example 2-5 ° C, below the tanning temperature of the second preparation. Preferred bath temperatures are above 20 ° C., better above 30 ° C., in particular above 50 ° C. The bath temperature should expediently be below 100 ° C., better below 80 ° C.
Die Erfindung betrifft des Weiteren eine Leitstruktur mit einem den elektrischen Strom nichtleitenden Substrat und einer auf dem Substrat angeordneten und hiermit verbundenen für elektrischen Strom leitfähigenThe invention further relates to a conductive structure having a substrate which does not conduct the electrical current and to which an electrical current is arranged on the substrate and connected thereto
Leitschicht, wobei die Leitschicht ein das Volumen der Leitschicht durchgreifendes metallisches Netzwerk aufweist, das in Zwischenräumen zwischen in der Leitschicht enthaltenen elektrisch leitenden oder nicht- leitenden Partikeln verlaufend angeordnet ist, wobei die Partikel miteinander und mit dem Substrat über ein organisches Bindemittel verbunden sind. Eine solche Leitstruktur ist beispielsweise erhältlich mit dem erfindungsgemäßen Verfahren.Conductive layer, wherein the conductive layer has a volume of the conductive layer by cross-metallic network, which is arranged in gaps between contained in the conductive layer electrically conductive or non-conductive particles, wherein the particles with each other and with the substrate via a associated organic binder. Such a conductive structure is obtainable, for example, by the process according to the invention.
Die Erfindung umfasst auch ein Sicherheits- und/oder Wertdokument enthaltend eine solche Leitstruktur, insbesondere ausgebildet als RFID Antenne.The invention also includes a security and / or value document containing such a conductive structure, in particular designed as an RFID antenna.
Alle Erläuterungen im Rahmen des erfindungsgemäßen Verfahrens gelten analog auch für die erfindungsgemäße Leitstruktur bzw. das erfindungsgemäße Sicherheits- und/oder Wertdokument.All explanations in the context of the method according to the invention also apply analogously to the guide structure according to the invention or the security and / or value document according to the invention.
Im Folgenden wird die Erfindung anhand eines lediglich eine Ausführungsform darstellenden Beispiels näher erläutert .In the following, the invention will be explained in more detail with reference to an example representing only one embodiment.
Beispiel 1: VergleichsbeispielExample 1: Comparative Example
Mit einem Siebdruckautomaten wurden AntennenstrukturenWith a screen printing machine were antenna structures
(HF-RFID-Antennen) auf Polycarbonatfolien einer Dicke von 100 μm gedruckt. Als Siebdruckpaste wurde das Produkt 5029 der Firma DuPont eingesetzt. Dieses Produkt enthält metallische Silberpartikel, ein organisches Bindemittel und ein organisches Lösemittel. Es erfolgte eine Trocknung für 10 min. bei 100 0C.(HF-RFID antennas) printed on polycarbonate films of a thickness of 100 microns. The screen printing paste used was product 5029 from DuPont. This product contains metallic silver particles, an organic binder and an organic solvent. It was dried for 10 min. at 100 ° C.
Die so hergestellten Antennen hatten einen Gleichstromwiderstand von 30 - 35 Ohm bei einer Schichtdicke von 20 μm. Beispiel 2: erfindungsgemaßes BeispielThe antennas thus produced had a DC resistance of 30-35 ohms with a layer thickness of 20 microns. Example 2: Inventive example
Zunächst wurde eine Antennenstruktur gemäß dem Beispiel 1 mit gleichen Materialien und Dimensionen hergestellt.First, an antenna structure according to Example 1 was made with the same materials and dimensions.
Diese Antennenstruktur wurde dann mit einer Zubereitung gemäß der Literaturstelle WO 2006/065221 bei 70 0C jedoch einem pH von 7,0 für 10 min. behandelt. Dabei veränderte sich die Schichtdicke nur unwesentlich, eine Untersuchung des Querschnitts ergab, dass im Wesentlichen auch innerhalb der Antennenstruktur eine Abscheidung von Silber stattgefunden hatte.This antenna structure was then with a preparation according to the reference WO 2006/065221 at 70 0 C, but a pH of 7.0 for 10 min. treated. Here, the layer thickness changed only insignificantly, a study of the cross-section showed that essentially also within the antenna structure, a deposition of silver had taken place.
Eine Messung des Widerstandes ergab eine Reduktion auf 8 - 11 Ohm.A measurement of the resistance showed a reduction to 8 - 11 ohms.
Zur weiteren elektrische Charakterisierung wurde auf die Antenne ein RFID Chipmodul montiert und die Ansprechfeldstarke in Abhängigkeit der Ubertragungsrate gemessen. Bei einer Ubertragungsrate von 424 kbit/s wurden 1,5 A/m gemessen. Dieser Wert entspricht einem mit einer drahtgewickelten Antenne mit dem gleichen Modul erzielbaren Wert.For further electrical characterization, an RFID chip module was mounted on the antenna and the response field strength was measured as a function of the transmission rate. At a transmission rate of 424 kbit / s, 1.5 A / m were measured. This value corresponds to a value obtainable with a wire-wound antenna with the same module.
Die Haftung der Antennenstruktur auf der PC Folie entsprach jener des Beispiels 1. The adhesion of the antenna structure on the PC film corresponded to that of Example 1.

Claims

Patentansprüche : Claims:
1. Verfahren zur Herstellung einer für elektrischen1. A method for producing a for electrical
Strom leitfähigen Schicht auf einem Substrat mit den folgenden Verfahrensschritten:Current conductive layer on a substrate with the following process steps:
a) auf das Substrat wird eine Beschichtung aus einer ersten Zubereitung aufgebracht, welche ein organisches Bindemittel,- ein wässriges oder organisches Lösemittel und Partikel enthält, b) das Substrat mit der Beschichtung wird einer Trocknungsverfahrensstufe unterzogen, wobei das Lösemittel entfernt wird, c) das Substrat mit der getrockneten Beschichtung wird mit einer zweiten Zubereitung zur autokatalytischen stromlosen Metallbeschichtung behandelt.a) on the substrate, a coating of a first composition is applied, which contains an organic binder, - an aqueous or organic solvent and particles, b) the substrate with the coating is subjected to a drying process step, wherein the solvent is removed, c) the Substrate with the dried coating is treated with a second preparation for autocatalytic electroless metal plating.
2. Verfahren nach Anspruch 1, wobei das Substrat eine organisches Polymer, vorzugsweise ausgewählt aus der Gruppe bestehend aus "PC (Polycarbonat , insbesondere Bisphenol A Polycarbonat), PET2. The method of claim 1, wherein the substrate is an organic polymer, preferably selected from the group consisting of "PC (polycarbonate, especially bisphenol A polycarbonate), PET
(Polyethylenglykolterephthalat) , PET-G, PET-F, PMMA (Polymethylmethacrylat) , ABS (Acrylnitril-Butadien- Styrol), PE (Polyethylen) , PP (Polypropylen), PI (Polyimid oder Poly-trans-Isopren) , PVC (Polyvinylchlorid) und Copolymere solcher Polymere", ist. Verfahren nach einem der Ansprüche 1 oder 2, wobei das Substrat eine Folie oder ein Folienverbund eines Sicherheits- und/oder Wertdokumentes, insbesondere eines Personalausweises, Reisepasses, einer ID-Karte, eines Zugangskontrollausweises, Visums, Tickets, Fuhrersehernes, Kraftfahrzeugpapiers , personalisierten Wertpapiers, einer Kreditkarte, oder personalisierte Chipkarten, ist.(Polyethylene glycol terephthalate), PET-G, PET-F, PMMA (polymethyl methacrylate), ABS (acrylonitrile-butadiene-styrene), PE (polyethylene), PP (polypropylene), PI (polyimide or poly-trans-isoprene), PVC (polyvinyl chloride ) and copolymers of such polymers ". Method according to one of claims 1 or 2, wherein the substrate is a film or a foil composite of a security and / or value document, in particular an identity card, passport, ID card, access control card, visa, ticket, driver's note, motor vehicle paper, personalized security, a credit card, or personalized smart cards, is.
Verfahren nach einem der Ansprüche 1 bis 3, wobei die leitfahige Schicht eine Antennenstruktur, insbesondere eines RFID Schaltkreises, ist.Method according to one of claims 1 to 3, wherein the conductive layer is an antenna structure, in particular an RFID circuit.
Verfahren nach einem der Ansprüche 1 bis 4, wobei die Beschichtung mittels einer Druckverfahrenstechnik, insbesondere mittels Siebdruck, in Stufe a) aufgebracht wird.Method according to one of claims 1 to 4, wherein the coating by means of a printing process technique, in particular by screen printing, in step a) is applied.
Verfahren nach einem der Ansprüche 1 bis 5, wobei die erste Zubereitung einen Anteil an Losemittel, vorzugsweise organischem Losemittel, von 2 - 30 Gew.- %, insbesondere 4 bis 10 Gew.-%, bezogen auf das Gesamtgewicht der Zubereitung, enthalt.Method according to one of claims 1 to 5, wherein the first preparation contains a proportion of solvent, preferably organic solvent, from 2 to 30% by weight, in particular 4 to 10 wt .-%, based on the total weight of the preparation.
7. Verfahren nach einem der Ansprüche 1 bis 6, wobei die erste Zubereitung einen Anteil von 30 - 99 Gew.-%, vorzugsweise 70 bis 95 Gew.-%, an Partikel, vorzugsweise elektrisch leitfahigen Partikeln, insbesondere Metallpartikeln, beispielsweise Silberpartikeln, enthalt.7. The method according to any one of claims 1 to 6, wherein the first preparation comprises a proportion of 30 to 99 wt .-%, preferably 70 to 95 wt .-%, of particles, preferably electrically conductive particles, in particular metal particles, for example silver particles containing.
Verfahren nach einem der Ansprüche 1 bis 7, wobei 90 % der Partikel, bezogen auf das Volumen, eine Partikelgroße im Bereich von 0,1 - 30 μm aufweisen.The method of any one of claims 1 to 7, wherein 90% of the particles by volume have a particle size in the range 0.1 to 30 μm.
9. Verfahren nach einem der Ansprüche 1 bis 8, wobei die Stufe b) für 0,1 bis 100 mm., insbesondere 1 bis 30 min., bei 30 - 200 0C, insbesondere 60 bis 130 0C, durchgeführt wird.9. The method according to any one of claims 1 to 8, wherein the stage b) for 0.1 to 100 mm., In particular 1 to 30 min., At 30 - 200 0 C, in particular 60 to 130 0 C, is performed.
10. Verfahren nach einem der Ansprüche 1 bis 9, wobei die zweite Zubereitung eine wassrige Losung mit einem Metallsalz und einem Reduktionsmittel, sowie optional zusätzlich mit einem Komplexbildner und/oder einem oder mehreren Hilfsstoffen ist.10. The method according to any one of claims 1 to 9, wherein the second preparation is an aqueous solution with a metal salt and a reducing agent, and optionally additionally with a complexing agent and / or one or more excipients.
11. Verfahren nach einem der Ansprüche 1 bis 10, wobei der pH-Wert der zweiten Zubereitung mittels Hilfsstoffen auf 6,0 - 8,5, insbesondere 6, 0 - 7,3, vorzugsweise 6,8 - 7,2, eingestellt ist, optional mittels eines Puffers.11. The method according to any one of claims 1 to 10, wherein the pH of the second preparation by means of adjuvants to 6.0 - 8.5, in particular 6, 0 - 7.3, preferably 6.8 - 7.2, is set , optionally by means of a buffer.
12. Leitstruktur mit einem den elektrischen Strom nichtleitenden Substrat und einer auf dem Substrat angeordneten und hiermit verbundenen für elektrischen Strom leitfähigen Leitschicht, wobei die Leitschicht ein das Volumen der Leitschicht durchgreifendes metallisches Netzwerk aufweist, das in Zwischenräumen zwischen in der Leitschicht enthaltenen elektrisch leitenden oder nicht-leitenden Partikeln verlaufend angeordnet ist, wobei die Partikel miteinander und mit dem Substrat über ein organisches Bindemittel verbunden sind, insbesondere erhältlich nach einem der Ansprüche 1 bis 11.12. conductive structure with a non-conducting electrical current substrate and one on the substrate arranged and connected thereto conductive for electrical current conductive layer, wherein the conductive layer has a volume of the conductive layer by cross-metallic network, which is arranged in gaps between contained in the conductive layer electrically conductive or non-conductive particles, wherein the particles with each other and with the substrate via an organic binder, in particular obtainable according to one of claims 1 to 11.
13. Sicherheits- und/oder Wertdokument enthaltend eine Leitstruktur nach Anspruch 12. 13. Security and / or value document containing a lead structure according to claim 12.
PCT/DE2009/001717 2008-12-23 2009-12-04 Security and/or valuable document comprising a conductive structure and method for producing same WO2010072192A2 (en)

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EP2367966A2 (en) 2011-09-28
EP2367966B1 (en) 2013-07-31

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