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WO2009127157A1 - 具有射频识别功能的sim卡芯片 - Google Patents

具有射频识别功能的sim卡芯片 Download PDF

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Publication number
WO2009127157A1
WO2009127157A1 PCT/CN2009/071325 CN2009071325W WO2009127157A1 WO 2009127157 A1 WO2009127157 A1 WO 2009127157A1 CN 2009071325 W CN2009071325 W CN 2009071325W WO 2009127157 A1 WO2009127157 A1 WO 2009127157A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
signal
sim card
radio frequency
card chip
Prior art date
Application number
PCT/CN2009/071325
Other languages
English (en)
French (fr)
Inventor
金可威
Original Assignee
上海坤锐电子科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 上海坤锐电子科技有限公司 filed Critical 上海坤锐电子科技有限公司
Publication of WO2009127157A1 publication Critical patent/WO2009127157A1/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/02—Terminal devices

Definitions

  • the present invention relates to the field of mobile communications, and in particular to a SIM card chip with radio frequency identification function.
  • Radio Frequency Identification technology
  • IC cards non-contact integrated circuit cards
  • Radio frequency identification technology is a kind of automatic identification technology.
  • the composition of the radio frequency identification system generally includes at least two parts: (1) electronic label, the English name is Tag; (2) reader, the English name is Reader, and the electronic label is generally saved.
  • an electronic tag is attached to the surface of the object to be identified.
  • the reader also known as a reading device, can read and recognize the electronic data stored in the electronic tag without contact, thereby achieving the purpose of automatically recognizing the object.
  • management functions such as collection, processing, and remote transmission of object identification information can be realized. For most RFID systems, a fixed frequency will be used and a standard protocol will be used to match it.
  • Amplitude Shift Keying takes different values according to the amplitude of the carrier, for example, corresponding to binary 0, the carrier amplitude is 0; corresponding to binary 1, the carrier amplitude is 1.
  • the amplitude modulation technique is simple to implement, but is susceptible to gain variations.
  • Frequency Shift Keying (FSK) modulates the frequency of a carrier by the value of digital data (such as 0 or 1). For example, the carrier frequency corresponding to binary 0 is F1, and the carrier frequency corresponding to binary 1 is F2.
  • the technology has good anti-interference performance, but it occupies a large bandwidth.
  • Phase Shift Keying modulates the carrier phase by the value of the digital data. For example, a phase shift of 180 is used to indicate 1 and a phase shift of 0 is used to represent 0.
  • This modulation technique has the best anti-interference performance, and the phase change can also be used as timing information to synchronize the clocks of the transmitter and receiver, and double the transmission rate.
  • the mature modulation technology of -2- is widely used in various communication systems.
  • RFID technology continues to advance and applications are becoming more and more popular.
  • the market urgently needs all kinds of RFID electronic tags and identification devices.
  • the cardholder deposits a certain amount in the electronic tag in advance, and deducts the transaction amount directly from the stored value account during the transaction.
  • single-function electronic tags also have some disadvantages, such as: electronic tag recharge must go to a special recharge center, relatively large transactions, no way to set a password, and can not combine RFID payment and mobile payment.
  • mobile communication terminals have experienced rapid development for more than 20 years, and have almost become a necessary portable device for consumers.
  • the penetration rate is very high, and there is a tendency to integrate more functions on mobile terminals.
  • It is a mature technology to use the mobile communication network of the mobile phone itself, such as GSM, CDMA, etc., but the effective combination of the mobile phone and the electronic tag, so that the mobile phone is conveniently used like a bus card is the development direction of the current radio frequency identification, and is also provided by the device.
  • Business and mobile operators are currently aggressively exploring the market.
  • the Combi SIM card solution also known as the dual interface SIM card solution, refers to replacing the internal SIM card of the mobile phone with a Combi SIM card, and adding a non-contact IC card application interface based on the function of the SIM card retaining the original contact interface.
  • the non-contact antenna of the non-contact IC card is printed on the plastic film and attached to the surface of the SIM card. 2.
  • the non-contact antenna of the non-contact IC card is attached to the mobile phone as a separate component. , the antenna is led to the front or back of the mobile phone, and the antenna is connected to the C4 and C8 interfaces that are not used by the SIM card.
  • the antenna is attached to the surface of the SIM card or led to the front or back of the mobile phone. During the installation process, the antenna is easily broken and damaged, and the user is inconvenient to use, and at the same time, due to the battery of the mobile phone and the circuit board.
  • the shielding function, the signal of the reader received by the dual interface SIM card and the signal reflected to the reader are very weak. Therefore, dual interface SIM OP090180
  • the NFC solution is a new solution for RFID recognition by companies such as Nokia and Philips in recent years.
  • the basic approach is to add RFID modules for payment to newly designed mobile phones. Special communication between RFID modules and mobile phones is used.
  • the protocols communicate with each other. This method can better solve the problem of using the mobile phone for RFID, but the disadvantage is that the user has to modify the existing mobile phone, or even buy a brand new mobile phone, which is not a method acceptable to all users at this stage, and It is also a great waste of resources for the whole society.
  • FIG. 1 is a schematic diagram of an RF interface circuit of a typical dual interface IC card.
  • the typical dual-interface IC card chip structure diagram introduced by Gemplus is shown in Figure 1.
  • the contact part communication standard conforms to the ISO/IEC7816 standard, and the non-contact part communication standard conforms to the ISO/IEC 14443 TYPEA/TYPEB standard.
  • the typical dual-interface IC card chip is mainly composed of a radio frequency (RF) interface and a central processing unit.
  • RF radio frequency
  • CPU Central Processing Unit
  • interrupt handler random number generator
  • ROM read only memory
  • EEPROM programmable electrical erase read only memory
  • the RF interface is a communication interface between the dual interface IC card and the 13.56 MHz reader;
  • the CPU is a central processing unit of the dual interface IC card, and is mainly used for the communication of the mobile phone and the completion of the 13.56 MHz reader transaction together with the internal software;
  • the interrupt processor is mainly used to process interrupts of various peripherals;
  • the ROM is used to store internal firmware programs;
  • the EEPROM and external RAM are used to store data and intermediate variables of the dual interface IC card; and the CRC module is used to generate cyclic redundancy.
  • the verification code ensures the integrity of the data during communication;
  • the clock module is used for internal clock processing;
  • the ISO/IEC7816 module is the communication interface between the mobile phone and the dual interface IC card, and is the channel through which the mobile phone provides power to the IC card.
  • the RF interface is mainly composed of a 13.56 MHz non-contact antenna, a demodulation circuit, a digital quantization circuit, and a modulation circuit.
  • the signal sent by the reader to the dual interface IC card is received through the 13.56 MHz antenna. Since the signal sent from the reader to the dual interface IC card is a 100% ASK modulated signal, the demodulation circuit in the dual interface IC card uses the diode peak package. Demodulation is performed by means of network detection. After the detection output, the signal will be quantized by the quantization circuit to become the baseband signal required by the logic circuit, and then sent to the CPU for processing. OP090180
  • the dual interface IC card When the dual interface IC card responds to the reader, it is coded by the CPU and sent to the modulation circuit for modulation. The response reflection of the signal is completed by changing the load resistance in the modulation circuit of the RF interface.
  • the dual interface IC card Due to the shielding effect of the mobile phone battery and the circuit board, if the dual interface IC card replaces the existing ordinary SIM card application into the mobile phone environment, the dual interface IC card will not be able to reliably receive the command signal sent by the reader, and the dual interface IC card is issued. The signal will be greatly attenuated after passing through the mobile phone environment, and such a small response signal cannot be received and distinguished by the reader.
  • the invention solves the problem of poor communication quality between the dual interface SIM card and the reader when the prior art dual interface SIM card is applied to the mobile phone environment.
  • the present invention provides a SIM card chip having a radio frequency identification function, comprising at least a radio frequency interface unit, where the radio frequency interface unit includes at least a receiving and amplifying circuit, a demodulating circuit, a modulating circuit, and a transmitting power amplifying circuit, where
  • a receiving amplification circuit for amplifying and transmitting the communication signal obtained by the mobile phone to the demodulation circuit; a demodulation circuit for demodulating the communication signal amplified by the receiving amplification circuit; and a modulation circuit for transmitting the mobile phone
  • the communication signal is modulated
  • a transmit power amplifying circuit for amplifying the communication signal modulated by the modulation circuit.
  • the above-mentioned SIM card chip with radio frequency identification has the following advantages: the communication signal obtained by the mobile phone is amplified by the receiving amplifying circuit to improve the attenuation of the received communication signal due to the shielding of the mobile phone battery and the circuit board. happensing.
  • the modulated mobile phone to be transmitted signal is amplified by the transmission power amplifying circuit to improve the attenuation of the transmitted communication signal due to the shielding of the mobile phone battery and the circuit board.
  • the SIM card manufactured by the above SIM card chip can be used as an ordinary single-interface contact SIM card, or can be used as a dual-interface SIM card and a mobile communication device in the RFID field to realize radio frequency identification such as mobile payment and access control. application.
  • FIG. 1 is a schematic diagram showing the internal structure of a typical dual interface IC card of the prior art
  • FIG. 2 is a schematic diagram of an RF interface circuit of a typical dual interface IC card of the prior art
  • Figure 3a is a junction of a dual interface SIM card including a SIM card chip having radio frequency identification function of the present invention OP090180 structure diagram;
  • Figure 3b is a cross-sectional view of Figure 3a in the A-A direction;
  • FIG. 4 is a schematic diagram of an embodiment of a radio interface unit and a non-contact antenna in a SIM card chip with radio frequency identification function according to the present invention
  • FIG. 5a is a schematic diagram of an example of a receiving and amplifying circuit in the radio frequency interface unit shown in FIG. 4;
  • FIG. 5b is a schematic diagram of an example of a receiving and amplifying circuit in the radio frequency interface unit shown in FIG. 4;
  • FIG. 6b is a schematic diagram of another example of a demodulation circuit in the radio frequency interface unit shown in FIG. 4.
  • FIG. 7 is a transmission power amplification in the radio frequency interface unit shown in FIG. An example of a circuit.
  • the SIM chip with radio frequency identification function comprises a radio frequency interface unit, a CPU, an interrupt processor, a random number generator, a ROM, an EEPROM, an external RAM, a cyclic redundancy check module, a clock module, an ISO/IEC7816 module, and a power pin. , reset pin, clock pin, first antenna pin, second antenna pin, 10 pin, spare pin, ground pin.
  • the non-contact part communication conforms to the ISO/IEC 14443 standard, the ISO/IEC 15693 standard or the IS011784/IS011785 standard.
  • the non-contact antenna 11 of the dual-interface SIM card is directly embedded in the SIM card base 13, and the SIM card chip 12 and the non-contact antenna 11 are in the same plane. Both ends of the antenna 11 are respectively connected to the two contact first antenna pins and the second antenna pins of the SIM card chip 12.
  • the SIM card chip 12 further includes a plurality of gold wires, and the respective pins of the SIM card chip 12 are connected by respective portions of the gold wire and the contact card metal contacts 14.
  • the power supply of the dual interface SIM card is provided by a mobile communication device (such as a mobile phone), that is, the power supply of the SIM card chip 12 is provided by the mobile communication device, and the power supply and the ground wire pass through the contact card metal contacts 14 and the gold wire 151 respectively. , 152 is connected to the power supply pin and ground pin.
  • the interface between the SIM card and the mobile communication device includes a reset pin, a clock pin and a 10-pin in the SIM card chip 12.
  • the communication protocol follows the ISO/IEC 7816 standard.
  • the mobile communication device provides a reset signal to the dual interface SIM card through the reset pin; the clock for the dual interface SIM card is provided by the mobile communication device through the clock pin; the serial communication data between the dual interface SIM card and the mobile communication device passes 10 The pin is made. Alternate pins are generally not used during normal operation.
  • the radio frequency interface unit in the SIM card chip having the radio frequency identification function includes: a receiving and amplifying circuit 20, a demodulating circuit 21, a digital quantizing circuit 22, a modulating circuit 25, and a transmitting power amplifying circuit 26, wherein
  • the receiving and amplifying circuit 20 is configured to amplify and transmit the communication signal obtained by the mobile phone to the demodulation circuit 21; the demodulation circuit 21 is configured to demodulate the communication signal amplified by the receiving and amplifying circuit 20; and the digital quantization circuit 22
  • the communication signal demodulated by the demodulation circuit 21 is converted into a digital signal; the receiving digital circuit interface 23 is configured to decode the digital signal output by the digital quantization circuit 22 according to the used protocol, and send it to the SIM card chip.
  • the transmitting digital circuit interface 24 is configured to receive the digital signal sent by the CPU in the SIM card chip, and digitally encode the digital signal according to the protocol used, and send the encoded signal to the modulation circuit 25;
  • a modulating circuit 25 configured to modulate the encoded mobile phone to be transmitted by the transmitting digital circuit interface 24;
  • the receiving amplifier circuit 20 obtains a signal via the non-contact antenna 27, and the transmission power amplifying circuit 26 amplifies the modulated signal and transmits it via the non-contact antenna 27.
  • radio frequency interface unit is further illustrated by some examples.
  • the signals transmitted by the reader to the dual interface SIM card through the mobile phone battery, circuit board, etc. have different attenuation, so the signal is transmitted via the SIM card.
  • the input of the contactless antenna 27 to the receiving amplifying circuit 20 is quite different.
  • the output terminal of the receiving amplifying circuit 20, that is, the input terminal of the demodulating circuit 21 is expected to have a stable signal to be demodulated for different mobile phone environments.
  • the receiving and amplifying circuit 20 obtains the input signal via the non-contact antenna 27, in addition to being able to achieve amplification of the input signal, the input signal should be able to be processed so that even if the input signal varies greatly, Output The amplitude of the amplified signal of the OP090180 is also small. Thereby, the demodulation circuit 21 is provided as a stable signal to be demodulated.
  • the receiving amplifying circuit 20 can be an automatic gain control circuit.
  • an embodiment of the automatic gain control circuit may include: a controllable gain amplifier 201, a control signal generating circuit 202, a comparator 203, and a level detecting circuit 204.
  • the controllable gain amplifier 201 is configured to determine a corresponding gain according to the gain control signal sent by the control signal generating circuit 202, and amplify the received AC input signal with the gain and output the signal to the demodulation circuit;
  • the level detecting circuit 204 is configured to convert the AC output signal outputted by the controllable gain amplifier 201 into a DC signal, and send it to the comparator 203;
  • the comparator 203 is configured to compare the DC signal sent by the level detecting circuit 204 with the reference signal, and send the corresponding comparison result to the control signal generating circuit 202;
  • the control signal generating circuit 202 is configured to generate and send a corresponding gain control signal to the controllable gain amplifier 201 according to the comparison result sent by the comparator 203.
  • the DC signal and the reference signal are DC voltages.
  • the gain control signal can be a control voltage.
  • the controllable gain amplifier 201 initially has a preset gain that amplifies the AC input signal with the preset gain after the AC input signal transmitted by the non-contact antenna 27 is obtained.
  • the level detecting circuit 204 converts the amplified AC signal outputted by the controllable amplifier 201 into a DC signal.
  • the conversion of the AC signal to a DC signal is here to facilitate comparison of the comparator 203. That is, after the level detecting circuit 204 transmits the converted DC signal to the comparator 203, the comparator 203 can conveniently compare the obtained DC signal with the reference signal.
  • the comparator 203 can perform voltage comparison. Specifically, when the voltage corresponding to the DC signal is greater than the voltage corresponding to the reference signal, the output DC signal is greater than the comparison result of the reference signal; when the voltage corresponding to the DC signal is less than the voltage corresponding to the reference signal, the output DC signal is smaller than the reference signal. Result: when the voltage corresponding to the DC signal is equal to the voltage corresponding to the reference signal, the output DC signal is equal to the reference signal OP090180
  • the control signal generating circuit 202 after obtaining the comparison result sent by the comparator 203, can generate and transmit a corresponding gain control signal to the controllable gain amplifier 201. Specifically, when the comparison result of the DC signal is smaller than the reference signal, a control signal with an increased gain is generated; when the comparison result of the DC signal is greater than the reference signal, a control signal with a reduced gain is generated; and the DC signal is equal to the reference signal. When the comparison result is obtained, a control signal that maintains the gain constant is generated.
  • the gain control signal can be sent to the controllable gain amplifier 201 in a controlled voltage manner, and after the controllable gain amplifier 201 obtains the control voltage, the gain can be increased, the gain can be reduced, or the gain can be maintained unchanged. The amplification of the AC input signal produces a corresponding change.
  • the automatic gain control circuit it can be changed according to the size of the received AC input signal, and when the AC input signal is large, the amplification of the AC input signal can be reduced by reducing the gain. Coefficient; When the AC input signal is small, the amplification factor for the AC input signal is increased by increasing the gain. Therefore, in a case where the variation amplitude of the AC input signal is large, the controllable gain amplifier 201 can still output an AC output signal having a relatively stable amplitude change, so that the demodulation circuit 21 located at the output end of the reception amplification circuit 20 can Get a stable signal input.
  • another embodiment of the automatic gain control circuit may include a controllable gain amplifier 201, a control signal generating circuit 202, a comparator 203, a level detecting circuit 204, and a low pass filter 205.
  • the low-pass filter 205 is configured to filter the interference signal in the DC signal converted by the level detecting circuit 204, thereby providing the comparator 203 a more accurate DC signal to be compared, so that the corresponding gain control is performed. More precise.
  • Other descriptions of the gain amplifier 201, the control signal generating circuit 202, the comparator 203, and the level detecting circuit 204 can be referred to the above example, and will not be described again.
  • the demodulation circuit 20 After the receiving amplifier circuit 20 amplifies the AC input signal received by the non-contact antenna 27, the demodulation circuit 20 demodulates the amplified signal.
  • the demodulation circuit 20 can be applied to, but not limited to, a demodulation circuit that implements a coherent demodulation method or a non-coherent demodulation method.
  • a non-coherent demodulation method such as diode peak envelope demodulation, average envelope demodulation, or the like can be used.
  • Corresponding circuits in the prior art that can implement coherent or non-coherent demodulation methods can be used as the demodulation circuit 20 herein.
  • the demodulation circuit includes a multiplier 210, a low-pass filter 211, and an input signal Vi amplified by the receiving and amplifying circuit 20, and the local carrier signal is processed by the multiplier 210, and then filtered by the low-pass filter 211 to generate The output signal Vo is demodulated.
  • Figure 6b shows a simplified diagram of a circuit for implementing a non-coherent demodulation method for diode peak envelope demodulation.
  • the demodulation circuit includes a detector diode 212, a capacitor C connected at one end to the cathode of the detector diode 212, and a resistor R connected at one end to the cathode of the detector diode 212, and the capacitor C and the resistor R are connected in parallel.
  • the demodulation circuit After receiving the input signal Vi, the demodulation circuit performs non-coherent demodulation of the diode peak envelope demodulation and outputs a demodulated output signal Vo.
  • the signal demodulated by the demodulation circuit 20 is converted into a digital signal via the digital quantization circuit 22.
  • the digital quantization circuit 22 can convert an analog signal output from the demodulation circuit 20 into a digital signal using an analog-to-digital converter (ADC) or a comparator (i.e., Comparator) circuit.
  • ADC analog-to-digital converter
  • Comparator comparator
  • the receiving digital circuit interface 23 decodes the digital signal according to the protocol used and sends it to the CPU in the SIM card chip.
  • the transmitting digital circuit interface 24 after obtaining the digital signal from the CPU in the SIM card chip, digitally encodes it according to the protocol used, and sends the encoded signal to the modulation circuit 25.
  • modulation circuit 25 After the modulation circuit 25 obtains the corresponding signal via the transmitting digital circuit interface 24, modulation is performed to obtain a modulated signal that meets the communication requirements.
  • the modulation circuit 25 can be used without limitation to existing modulation circuits that implement ASK or FSK or PSK. Further, since the modulation circuit 25 uses digital modulation techniques such as ASK or PSK or FSK, it can directly receive the digital signal transmitted from the transmission digital circuit interface 24 when it is modulated.
  • the transmission power amplifying circuit 26 is for amplifying the communication signal modulated by the modulation circuit 25.
  • the transmit power amplifying circuit 26 can be implemented using a class C or class D power amplifier, or other corresponding custom circuits can be used.
  • Fig. 7 is a schematic diagram showing a transmission power amplifying circuit.
  • the amplification circuit shown is a high efficiency resonant power amplifier circuit comprising: first to fourth inverters 261 to 264, a first PNP transistor Q3, a second PNP transistor Q5, a first NPN transistor Q4, and a second NPN transistor.
  • Q6 first to third capacitors C3 to C5, a first resistor R11, a second resistor R12, a first antenna load terminal ANT1, and a second antenna load terminal ANT2.
  • the input of the first inverter 261 receives the first modulated control signal RFTXD1 and the output is coupled to the base of the second NPN transistor Q6.
  • the input of the second inverter 262 receives the second modulated control signal RFTXD2, and the output is coupled to the base of the second PNP transistor Q5.
  • the input of the third inverter 263 receives the third modulated control signal RFTXD3, and the output terminal is connected to the base of the first PNP transistor Q3.
  • the input of the fourth inverter 264 receives the fourth modulated control signal RFTXD4, and the output is coupled to the base of the first NPN transistor Q4.
  • the collector of the second PNP transistor Q5 is grounded, and the emitter is connected to the emitter of the second NPN transistor Q6.
  • the collector of the second NPN transistor Q6 is connected to VCC via a first resistor R11.
  • the collector of the first PNP tube Q3 is grounded, and the emitter is connected to the emitter of the first NPN tube Q4.
  • the collector of the first NPN transistor Q4 is connected to VCC via a second resistor R12.
  • the first end of the first capacitor C3 is connected to the emitter of the second PNP tube Q5 and the emitter of the second NPN tube Q6.
  • the first end of the second capacitor C4 is connected to the emitter of the first PNP tube Q3 and the emitter of the first NPN tube Q4.
  • Both ends of the third capacitor C5 are respectively connected to the second ends of the first capacitor C3 and the second capacitor C4.
  • Both ends of the third capacitor C5 are respectively connected to the first antenna load terminal ANT1 and the second antenna load terminal ANT2.
  • the above amplifying circuit is controlled by the switching of four modulated control signals of RFTXD1, RFTXD2, RFTXD3, and RFTXD4, so that the NPN tubes Q5, Q6, and the PNP tubes Q3, Q4 are alternately turned on/off, thereby simultaneously amplifying the modulated signal.
  • the antenna load end emits a radio frequency signal that meets the frequency requirement.
  • the four modulated control signals RFTXD1, RFTXD2, RFTXD3, and RFTXD4 are generated by the modulation circuit 25.
  • RFTXD1/RFTXD2 and RFTXD3/RFTXD4 are the opposite phase pairs.
  • the phase between RFTXD1 and RFTXD2 is basically the same, between RFTXD3 and RFTXD4.
  • the phases are basically the same.
  • the radio frequency interface unit in the SIM card chip is obtained via the non-contact antenna 27.
  • the command signal is amplified by the receiving and amplifying circuit 20, sent to the demodulating circuit 21 for demodulation, and after demodulating and obtaining the demodulated signal, the digital demodulating signal is converted into a digital signal by the digital quantizing circuit 22, and is received via the receiving digital circuit.
  • the interface 23 transmits the digital signal to the inside of the SIM card chip. Since the receiving amplifying circuit 20 amplifies the received command signal, the attenuation of the command signal by the shielding of the mobile phone battery and the circuit board is compensated, so that the mobile phone can correctly obtain the command letter sent by the reader.
  • the response signal is encoded by the CPU in the SIM card chip, modulated by the modulation circuit 25, and sent to the transmission power amplifying circuit 26 for power amplification, and then passed through the The non-contact antenna 27 is described as being transmitted. Since the transmission power amplifying circuit 26 performs power amplification on the response signal, the power attenuation of the shielding signal to the response signal of the mobile phone battery and the circuit board is compensated, and the attenuation effect of the shielding on the response signal is improved.

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  • Computer Networks & Wireless Communication (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Description

OP090180
一 1一
具有射频识别功能的 S IM卡芯片
本申请要求于 2008 年 4 月 18 日提交中国专利局、 申请号为 200810036253.9、 发明名称为 "具有射频识别功能的 SIM卡芯片 "的中国专利 申请的优先权， 其全部内容通过引用结合在本申请中。
技术领域
本发明涉及移动通信领域， 特别涉及一种具有射频识别功能的 SIM卡芯 片。
背景技术
包括非接触集成电路卡（ Integrated Circuit Card, 简称 IC卡 )在内的射频 识别技术（ Radio Frequency Identification, 以下简称 RFID )技术经过十多年的 发展， 已深入现代生活的各个角落， 被广泛应用于公交、 门禁、 小额电子支付 等领域。射频识别技术是自动识别技术的一种，射频识别系统的组成一般至少 包括两个部分： （1 ) 电子标签， 英文名称为 Tag; ( 2 ) 阅读器， 英文名称为 Reader, 电子标签中一般保存有约定格式的电子数据， 在实际应用中， 电子标 签附着在待识别物体的表面。 阅读器又称为读出装置， 可无接触地读取并识别 电子标签中所保存的电子数据， 从而达到自动识别物体的目的。 进一步， 通过 计算机及计算机网络， 可实现对物体识别信息的釆集、处理及远程传送等管理 功能。 对大多数 RFID系统而言， 将釆用一个固定的频率， 并有一套标准协议 与它相配套。
RFID领域广泛釆用数字调制技术， 如 ASK、 FSK和 PSK调制。 幅度键 控（Amplitude Shift Keying, 简称 ASK )即按载波的幅度受到数字数据的调制 而取不同的值， 例如对应二进制 0, 载波振幅为 0; 对应二进制 1 , 载波振幅 为 1。调幅技术实现起来简单，但容易受增益变化的影响。频移键控（Frequency Shift Keying, 简称 FSK )即按数字数据的值（如 0或 1 )调制载波的频率。 例 如对应二进制 0的载波频率为 F1 , 而对应二进制 1的载波频率为 F2。 该技术 抗干扰性能好， 但占用带宽较大。 相移键控（Phase Shift Keying, 简称 FSK ) 即按数字数据的值调制载波相位。 例如用 180相移表示 1 , 用 0相移表示 0。 这种调制技术抗干扰性能最好，且相位的变化也可以作为定时信息来同步发送 机和接收机的时钟， 并对传输速率起到加倍的作用。这几种调制方式都是现有 OP090180
-2- 的成熟调制技术， 广泛应用于各通信系统中。
近年来， 在轨道交通、 物流管理、 物品防伪、 身份识别等需求推动下， RFID技术的不断进步， 应用越来越普及， 市场迫切需要各类 RFID电子标签 和识别设备。 电子标签内部一般有一个电子钱包，持卡人预先在电子标签中存 入一定的金额， 交易时直接从储值账户中扣除交易金额。但单一功能电子标签 也有一些缺点， 比如： 电子标签充值必须到专门的充值中心、 比较大额的交易 没有办法设置密码以及无法将 RFID支付和移动支付结合起来等。
而与此同时， 移动通信终端经历 20多年的迅速发展， 几乎已经成为消费 者人手必备的随身装置， 普及率非常高， 并且有在移动终端上集成更多功能的 趋势。 利用手机本身的移动通信网络如 GSM、 CDMA等进行支付是现有的成 熟技术，但将手机和电子标签有效结合起来， 让手机像公交卡这样方便使用是 目前射频识别的发展方向， 也是设备提供商和移动运营商目前大力开拓的市 场。
受日本和韩国手机支付的影响， 小额支付是运营商一直期望进入的领域。 由于能够非常好的为实时支付和现场支付提供解决方案，非接触式近距离射频 识别具有极为广阔的应用前景，并将为目前发展緩慢的移动支付产业带来前所 未有的机遇。 而结合移动终端与 RFID技术的一机多用或一"" ^多用将会是未来 十年的新的发展方向。 特别是在 3G 时代， 无处不在的具有无线连接功能的 RFID读写器与非接触式应用的 RFID将是发展的重中之重。 目前业界主要有 两套基于非接触技术的解决方案： Combi SIM卡方案和近场通信（NFC )方案。
Combi SIM卡方案， 又称双界面 SIM卡方案， 指用 Combi SIM卡替换手 机内部 SIM卡，在保留原接触式界面的 SIM卡功能基础上增加非接触 IC卡应 用界面。 比较典型的做法有两种： 一、 非接触 IC卡的非接触天线印刷在塑料 薄膜上， 再贴至 SIM卡表面； 二、 非接触 IC卡的非接触天线作为一个独立的 部件附加在手机中， 将天线引到手机的正面或反面， 天线连接在 SIM卡尚未 使用的 C4和 C8两个接口上。 但这两种方案的缺点是： 天线贴到 SIM卡表面 或者引出到手机正面或反面， 在安装过程中很容易造成天线断裂、 损坏， 并造 成用户使用不方便， 同时由于手机电池和电路板的屏蔽作用， 双界面 SIM卡 能收到的阅读器的信号和反射给阅读器的信号都非常微弱。 因此， 双界面 SIM OP090180
-3 - 卡和阅读器之间通信的质量非常差， 阅读器几乎收不到双界面 SIM卡返回的 应答。
而 NFC方案是近年由 Nokia、 Philips等公司提出有关射频识别的一种新 的方案， 基本的做法是在新设计的手机中加入用于支付的 RFID模块， RFID 模块和手机之间用专门的通信协议进行相互通信。这种方法可以比较好地解决 利用手机进行射频识别的问题，但缺点是用户必须去改造现有的手机， 甚至购 买一个全新的手机， 这在现阶段并不是所有用户都能接受的方法， 而且对整个 社会而言也是很大的资源浪费。
请参阅图 1现有技术典型双界面 IC卡的内部结构示意图和图 2现有技术 典型双界面 IC卡的 RF接口电路示意图。 由 Gemplus公司推出的典型的双界 面 IC卡芯片结构图如图 1所示，接触式部分通信标准符合 ISO/ IEC7816标准， 非接触式部分通信标准符合 ISO/IEC 14443 TYPEA/TYPEB标准。 该典型的双 界面 IC卡芯片主要由射频 （Radio Frequency, 简称 RF )接口、 中央处理器
( Central Processing Unit, 以下简称 CPU )、 中断处理器、 随机数发生器、 只 读存储器 (简称 ROM )、 EEPROM (即可编程的电擦除只读存储器）、外部 RAM
(即随机存取存储器）、 循环冗余校验 （简称 CRC ) 模块、 时钟模块、 ISO/IEC7816等模块组成。 其中， RF接口是双界面 IC卡和 13. 56MHz阅读器 的通信接口； CPU是双界面 IC卡的中央处理器， 和内部软件一起主要用于手 机通信的进行和 13.56MHz阅读器交易的完成； 中断处理器主要用于处理各种 外设的中断； ROM用于存储内部的固件程序； EEPROM和外部 RAM用于存 储双界面 IC卡的数据和中间变量等； CRC模块用于产生循环冗余校验码， 保 证通信过程中数据的完整性； 时钟模块用于内部的时钟处理； ISO/ IEC7816 模块是手机和双界面 IC卡的通信接口， 且是手机提供电源给 IC卡的通道。
如图 2所示， RF接口主要由 13. 56MHz的非接触式天线、 解调电路、 数 字量化电路和调制电路组成。
阅读器发到双界面 IC卡的信号通过 13. 56MHz天线接收下来， 由于阅读 器发到双界面 IC卡的信号是 100% ASK的调制信号，双界面 IC卡中解调电路 釆用二极管峰值包络检波的方式进行解调。检波输出后，信号将经过量化电路 进行量化处理后变成逻辑电路所需的基带信号， 再送 CPU进行处理。 OP090180
一 4一
当双界面 IC卡向阅读器应答信号时， 由 CPU完成编码， 并送到调制电路 进行调制， 通过改变 RF接口中调制电路里的负载电阻完成信号的应答反射。
由于手机电池和电路板的屏蔽作用， 如果双界面 IC 卡替换现有的普通 SIM卡应用到手机环境中， 双界面 IC卡将无法可靠收到阅读器发出的命令信 号， 同时双界面 IC卡发出的信号经手机环境后将大幅衰减， 如此小的应答信 号无法由阅读器接收并区分出来。
发明内容
本发明解决现有技术双界面 SIM卡应用到手机环境中时， 其和阅读器之 间的通信质量较差的问题。
为解决上述问题， 本发明提供一种具有射频识别功能的 SIM卡芯片， 至 少包括射频接口单元， 所述射频接口单元至少包括接收放大电路、 解调电路、 调制电路以及发送功率放大电路， 其中，
接收放大电路， 用于将手机获得的通信信号放大并传输至解调电路； 解调电路， 用于将经接收放大电路放大后的通信信号进行解调； 调制电路， 用于将手机待发送的通信信号进行调制；
发送功率放大电路， 用于将经调制电路调制的通信信号放大。
与现有技术相比， 上述具有射频识别功能的 SIM卡芯片具有以下优点： 通过接收放大电路将手机获得的通信信号放大，以改善由于手机电池和电路板 的屏蔽而使得接收的通信信号衰减的情况。相应地， 通过发送功率放大电路将 调制后的手机待发送信号放大，以改善由于手机电池和电路板的屏蔽而使得发 送的通信信号衰减的情况。
另外，用上述 SIM卡芯片制造的 SIM卡既可作为普通的单界面接触式 SIM 卡用，也可作为双界面 SIM卡和移动通信设备一起用于 RFID领域， 实现移动 支付、 门禁控制等射频识别应用。
附图说明
在说明书附图中：
图 1是现有技术典型双界面 IC卡的内部结构示意图；
图 2是现有技术典型双界面 IC卡的 RF接口电路示意图；
图 3a是包括本发明具有射频识别功能的 SIM卡芯片的双界面 SIM卡的结 OP090180 构示意图；
图 3b是图 3a在 A - A方向上的剖视图；
图 4是本发明具有射频识别功能的 SIM卡芯片中的射频接口单元与非接 触式天线配合的一种实施方式示意图；
图 5a是图 4所示射频接口单元中的接收放大电路的一种实例示意图； 图 5b是图 4所示射频接口单元中的接收放大电路的一种实例示意图； 图 6a是图 4所示射频接口单元中的解调电路的一种实例示意图； 图 6b是图 4所示射频接口单元中的解调电路的另一种实例示意图； 图 7是图 4所示射频接口单元中的发送功率放大电路的一种实例示意图。 具体实施方式
为详细说明本发明的技术内容、 构造特征、 所达成目的及功效， 下面将结 合实施例并配合图式予以详细说明。 本发明具有射频识别功能的 SIM芯片包括射频接口单元、 CPU、 中断处 理器、 随机数发生器、 ROM、 EEPROM、 外部 RAM、 循环冗余校验模块、 时 钟模块、 ISO/IEC7816模块及电源引脚、 复位引脚、 时钟引脚、 第一天线引脚、 第二天线引脚、 10引脚、 备用引脚、 接地引脚。
包括本发明具有射频识别功能的 SIM芯片的双界面 SIM卡用于 RFID领 域时， 非接触式部分通信符合 ISO/IEC 14443 标准、 ISO/IEC 15693 标准或 IS011784/IS011785标准。
结合图 3a和图 3b所示， 所述双界面 SIM卡的非接触式天线 11直接内嵌 在 SIM卡基 13内部， SIM卡芯片 12与该非接触式天线 11处于同一平面， 该 非接触式天线 11的两端分别连接到该 SIM卡芯片 12的两个触点第一天线引 脚和第二天线引脚上。
所述的 SIM卡芯片 12还包括若干根金线， SIM卡芯片 12的各个引脚通 过金线和接触式卡金属触点 14的对应各个部分相连。 所述双界面 SIM卡的供 电电源由移动通信设备（例如手机）提供， 即 SIM卡芯片 12的供电电源由移 动通信设备提供， 电源、 地线分别通过接触式卡金属触点 14和金线 151, 152 接到所述的电源弓 I脚和接地引脚。 OP090180
一 6—
双界面 SIM卡和移动通信设备之间的通讯接口包括 SIM卡芯片 12内的的 复位引脚、 时钟引脚和 10引脚。 通信协议遵循 ISO/IEC7816标准。 移动通信 设备通过复位引脚给双界面 SIM卡提供复位信号； 双界面 SIM卡工作的时钟 由移动通信设备通过时钟引脚提供； 双界面 SIM卡和移动通信设备之间串行 通信的数据通过 10引脚进行。 备用引脚在正常工作时一般不用。
参照图 4所示， 本发明具有射频识别功能的 SIM卡芯片中的射频接口单 元包括： 接收放大电路 20、 解调电路 21、 数字量化电路 22、 调制电路 25、 发 送功率放大电路 26, 其中，
接收放大电路 20,用于将手机获得的通信信号放大并传输至解调电路 21 ; 解调电路 21 , 用于将经接收放大电路 20放大后的通信信号进行解调； 数字量化电路 22,用于将解调电路 21解调后的通信信号转换为数字信号； 接收数字电路接口 23 , 用于将数字量化电路 22输出的数字信号根据所釆 用协议进行解码， 并发送至 SIM卡芯片中的 CPU;
发送数字电路接口 24, 用于接收 SIM卡芯片中 CPU发出的数字信号， 并 根据所釆用协议对该数字信号进行数字编码， 并将编码后信号送到调制电路 25;
调制电路 25 , 用于将发送数字电路接口 24传输的经编码后的手机待发送 通信信号进行调制；
发送功率放大电路 26, 用于将经调制电路 25调制的通信信号放大。
其中， 所述接收放大电路 20经由非接触式天线 27获得信号， 而发送功率 放大电路 26在将调制信号放大后， 经由非接触式天线 27发送。
下面通过一些举例说明对上述射频接口单元进一步说明。
由于 SIM卡在各种手机中的安装位置、 安装方式以及周围机械金属环境 等不同， 阅读器透过手机电池、 电路板等传到双界面 SIM卡的信号有不同的 衰减， 所以信号经由 SIM卡非接触式天线 27送到接收放大电路 20的输入端 有相当的不同。 另一方面， 接收放大电路 20的输出端， 即解调电路 21的输入 端， 希望对不同手机环境都有一个稳定的待解调信号。 因此， 所述接收放大电 路 20经由非接触式天线 27获得输入信号后，除了应能够实现输入信号的放大， 也应能对所述输入信号进行处理， 以使得即使输入信号变化幅度很大， 所输出 OP090180 的经放大的信号的幅度也较小。 从而， 提供解调电路 21—个稳定的待解调信 号。
基于此，所述接收放大电路 20可以为自动增益控制电路。参照图 5a所示， 所述自动增益控制电路的一种实施例可以包括： 可控增益放大器 201、 控制信 号产生电路 202、 比较器 203、 电平检测电路 204。
其中， 所述可控增益放大器 201 , 用于根据控制信号产生电路 202发送的 增益控制信号确定相应的增益，并以该增益对所接收的交流输入信号进行放大 后输出至解调电路；
所述电平检测电路 204, 用于将所述可控增益放大器 201输出的交流输出 信号转换为直流信号， 并发送至比较器 203;
所述比较器 203 , 用于将电平检测电路 204发送的直流信号与基准信号进 行比较， 并将相应比较结果发送至控制信号产生电路 202;
所述控制信号产生电路 202 , 用于根据比较器 203发送的比较结果， 产生 并向所述可控增益放大器 201发送相应的增益控制信号。
其中， 所述直流信号与基准信号为直流电压。 所述增益控制信号可以为控 制电压。
以下对上述自动增益控制电路的工作过程进一步说明如下：
所述可控增益放大器 201初始有一个预置的增益，其在获得非接触式天线 27传送的交流输入信号后， 会以该预置的增益对该交流输入信号进行放大。
而所述电平检测电路 204则会将所述可控增大放大器 201输出的放大后的 交流信号转换为直流信号。此处将所述交流信号转换为直流信号是为了方便比 较器 203的比较。也就是说，在电平检测电路 204将转换后的直流信号发送至 比较器 203后，所述比较器 203就可以很方便地将所获得的直流信号与基准信 号进行比较。
对于比较器 203 , 例如， 当直流信号和基准信号均为直流电压时， 所述比 较器 203就可以进行电压的比较。具体地说，在直流信号对应的电压大于基准 信号对应的电压时，输出直流信号大于基准信号的比较结果； 在直流信号对应 的电压小于基准信号对应的电压时， 输出直流信号小于基准信号的比较结果； 在直流信号对应的电压等于基准信号对应的电压时，输出直流信号等于基准信 OP090180
一 8—
号的比较结果。
而所述控制信号产生电路 202, 在获得比较器 203发送的比较结果后， 就 可以产生并向可控增益放大器 201发送相应的增益控制信号。具体地说， 在获 得直流信号小于基准信号的比较结果时，产生增益增加的控制信号； 在获得直 流信号大于基准信号的比较结果时，产生增益减小的控制信号； 在获得直流信 号等于基准信号的比较结果时， 产生维持增益不变的控制信号。 所述增益控制 信号可以控制电压的方式发送至可控增益放大器 201 , 则所述可控增益放大器 201在获得控制电压后， 就可以相应增加增益、 减小增益或维持增益不变， 以 使得对交流输入信号的放大产生相应改变。
根据以上对所述自动增益控制电路的说明可知，其可以根据所接收的交流 输入信号的大小而相应改变增益，在交流输入信号较大时，通过减小增益来减 小对于交流输入信号的放大系数； 而在交流输入信号较小时， 则通过增加增益 来增加对于交流输入信号的放大系数。从而，使得在交流输入信号的变化幅度 较大的情况下，所述可控增益放大器 201仍能输出幅度变化较稳定的交流输出 信号，使得位于所述接收放大电路 20输出端的解调电路 21能够获得一个稳定 的信号输入。
参照图 5b所示， 所述自动增益控制电路的另一种实施例可以包括： 可控 增益放大器 201、 控制信号产生电路 202、 比较器 203、 电平检测电路 204 以 及低通滤波器 205。 其中， 所述低通滤波器 205是为了滤除电平检测电路 204 转换后的直流信号中的干扰信号，从而提供比较器 203—个更为准确的待比较 直流信号， 使得相应对增益的控制更加精确。 其他例如增益放大器 201、 控制 信号产生电路 202、 比较器 203以及电平检测电路 204的说明可参照上例， 此 处就不再赘述了。
在接收放大电路 20将非接触式天线 27接收的交流输入信号放大后，所述 解调电路 20就会将该放大的信号进行解调。所述解调电路 20可以釆用但不限 于现有实现相干解调方法或不相干解调方法的解调电路。 例如，对于非相干解 调方法， 可以釆用二极管峰值包络解调、 平均包络解调等非相干解调方法。 现 有技术可以实现相干或不相干解调方法的相应电路都可用作此处的解调电路 20。 OP090180
-9- 图 6a所示为一种实现相干解调方法的电路的简易示意图。 所述解调电路 包括乘法器 210、 低通滤波器 211 , 经接收放大电路 20放大后的输入信号 Vi, 与本地载波信号经由乘法器 210的运算后， 由低通滤波器 211滤波后， 生成解 调输出信号 Vo。
图 6b所示为一种实现二极管峰值包络解调的非相干解调方法的电路的简 易示意图。 所述解调电路包括检波二极管 212、 一端与检波二极管 212负极相 连的电容 C以及一端与检波二极管 212负极相连的电阻 R, 且所述电容 C和 电阻 R并联。 该解调电路在接收输入信号 Vi后， 进行二极管峰值包络解调的 非相干解调， 并输出解调输出信号 Vo。
经解调电路 20解调后的信号则经由数字量化电路 22转换为数字信号。所 述的数字量化电路 22 可以釆用模数转换器 (简称 ADC ) 或比较器 (即 Comparator ) 电路将所述解调电路 20输出的模拟信号转化为数字信号。
而在模数转换后， 接收数字电路接口 23就将数字信号根据所釆用协议进 行解码， 并送到 SIM卡芯片中 CPU中。
而发送数字电路接口 24在得到 SIM卡芯片中 CPU发出的数字信号后， 将根据所釆用协议进行数字编码， 并将编码信号送到调制电路 25。
在调制电路 25经由发送数字电路接口 24获得相应信号后，就会进行调制 以获得符合通信要求的调制信号。 所述调制电路 25可以釆用但不限于现有实 现 ASK或 FSK或 PSK的调制电路。 此外， 调制电路 25因为釆用数字调制技 术， 例如 ASK或 PSK或 FSK, 所以进行调制时， 其就可直接接收发送数字电 路接口 24发送的数字信号。
而发送功率放大电路 26, 则用于将经调制电路 25调制的通信信号放大。 所述发送功率放大电路 26可以釆用 C类或 D类功放实现，也可釆用其他相应 的定制电路。
图 7所示为一种发送功率放大电路的示意图。所示放大电路为一种高效率 谐振功率放大器电路， 包括： 第一至第四反相器 261 ~ 264, 第一 PNP管 Q3、 第二 PNP管 Q5, 第一 NPN管 Q4、 第二 NPN管 Q6, 第一至第三电容 C3 ~ C5, 第一电阻 Rll、 第二电阻 R12, 第一天线负载端 ANT1、 第二天线负载端 ANT2。 OP090180
- 10- 其中， 第一反相器 261的输入端接收第一已调制控制信号 RFTXD1 ,输出 端与第二 NPN管 Q6的基极相连。 第二反相器 262的输入端接收第二已调制 控制信号 RFTXD2, 输出端与第二 PNP管 Q5的基极相连。 第三反相器 263 的输入端接收第三已调制控制信号 RFTXD3 ,输出端与第一 PNP管 Q3的基极 相连。第四反相器 264的输入端接收第四已调制控制信号 RFTXD4,输出端与 第一 NPN管 Q4的基极相连。
第二 PNP管 Q5的集电极接地， 射极与第二 NPN管 Q6的射极相连。 第 二 NPN管 Q6的集电极经由第一电阻 R11与 VCC相连。第一 PNP管 Q3的集 电极接地， 射极与第一 NPN管 Q4的射极相连。 第一 NPN管 Q4的集电极经 由第二电阻 R12与 VCC相连。
第一电容 C3的第一端与第二 PNP管 Q5的射极以及第二 NPN管 Q6的射 极相连。 第二电容 C4的第一端与第一 PNP管 Q3的射极以及第一 NPN管 Q4 的射极相连。第三电容 C5的两端分别与第一电容 C3以及第二电容 C4的第二 端相连。 第三电容 C5的两端分别与第一天线负载端 ANT1、 第二天线负载端 ANT2相连。
上述放大电路通过 RFTXD1、 RFTXD2、 RFTXD3、 RFTXD4这四个已调 制控制信号的开关控制， 使得 NPN管 Q5、 Q6, 以及 PNP管 Q3、 Q4交替打 开 /关闭， 从而在对于调制信号放大的同时， 也使得天线负载端发出符合频率 要求的射频信号。 而 RFTXD1、 RFTXD2、 RFTXD3、 RFTXD4这四个已调制 控制信号由调制电路 25产生， RFTXD1/RFTXD2与 RFTXD3/RFTXD4为相位 正好相反的信号对， RFTXD1 与 RFTXD2 之间相位基本一致， RFTXD3 与 RFTXD4之间相位基本一致。
通过以上对射频接口单元的举例说明可以看到，在例如手机与阅读器的通 信时， 当阅读器向手机发送命令信号时， 所述 SIM卡芯片中的射频接口单元 经由非接触式天线 27获得命令信号， 经接收放大电路 20放大后， 送至解调电 路 21解调，并在解调获得解调信号后由数字量化电路 22将模拟的解调信号转 换为数字信号， 并经由接收数字电路接口 23将所述数字信号发送至 SIM卡芯 片内部。 由于接收放大电路 20将接收的命令信号放大， 补偿了手机电池和电 路板的屏蔽对命令信号的衰减， 使得手机能够正确获得阅读器发出的命令信 OP090180
- 11 - 号。
而当手机向阅读器应答信号时， 该应答信号经过 SIM卡芯片内的 CPU编 码后，经所述的调制电路 25进行调制后送到所述的发送功率放大电路 26进行 功率放大， 再通过所述的非接触式天线 27 发射。 由于发送功率放大电路 26 将应答信号进行功率放大， 卜偿了手机电池和电路板的屏蔽对应答信号的功率 衰减， 改善了所述屏蔽对应答信号的衰减影响。
本领域技术人员均应了解，在不脱离本发明的精神或范围的情况下， 可以 对本发明进行各种修改和变型。 因而， 如果任何修改和变型落入所附权利要求 书以及等同物的保护范围内时， 认为本发明涵盖这些修改和变型。

Claims

OP090180 - 12- 权 利 要 求
1. 一种具有射频识别功能的 SIM卡芯片， 至少包括射频接口单元， 其中， 所述射频接口单元至少包括接收放大电路、解调电路、调制电路以及发送功率 放大电路，
接收放大电路， 用于将手机获得的通信信号放大并传输至解调电路； 解调电路， 用于将经接收放大电路放大后的通信信号进行解调； 调制电路， 用于将手机待发送的通信信号进行调制；
发送功率放大电路， 用于将经调制电路调制的通信信号放大。
2. 根据权利要求 1所述的具有射频识别功能的 SIM卡芯片， 其中， 所述接 收放大电路为自动增益控制电路。
3. 根据权利要求 1所述的具有射频识别功能的 SIM卡芯片， 其中， 所述自 动增益控制电路包括： 可控增益放大器、 控制信号产生电路、 比较器、 电平检 测电路，
所述可控增益放大器，用于才艮据控制信号产生电路发送的增益控制信号确 定相应的增益，并以该增益对所接收的交流输入信号进行放大后输出至解调电 路；
所述电平检测电路，用于将所述可控增益放大器输出的交流输出信号转换 为直流信号， 并发送至比较器；
所述比较器， 用于将电平检测电路发送的直流信号与基准信号进行比较， 并将相应比较结果发送至控制信号产生电路；
所述控制信号产生电路， 用于根据比较器发送的比较结果，产生并向所述 可控增益放大器发送相应的增益控制信号。
4. 根据权利要求 3所述的具有射频识别功能的 SIM卡芯片， 其中， 所述自 动增益控制电路还包括低通滤波器，用于滤除电平检测电路转换后的直流信号 中的干扰信号， 并发送至比较器。
5. 根据权利要求 3所述的具有射频识别功能的 SIM卡芯片， 其中， 所述直 流信号与基准信号为直流电压。
6. 根据权利要求 3所述的具有射频识别功能的 SIM卡芯片， 其中， 所述增 益控制信号为控制电压。 OP090180
- 13 -
7. 根据权利要求 1所述的具有射频识别功能的 SIM卡芯片， 其中， 所述发 送功率放大电路为 C类或 D类功放。
8. 根据权利要求 1所述的具有射频识别功能的 SIM卡芯片， 其中， 所述发 送功率放大电路包括： 第一至第四反相器， 第一 PNP管、 第二 PNP管， 第一 NPN管、 第二 NPN管， 第一至第三电容， 第一电阻、 第二电阻， 第一天线负 载端、 第二天线负载端，
第一反相器的输入端接收第一已调制控制信号， 输出端与第二 NPN管的 基极相连，第二反相器的输入端接收第二已调制控制信号，输出端与第二 PNP 管的基极相连， 第三反相器的输入端接收第三已调制控制信号， 输出端与第一 PNP管的基极相连，第四反相器的输入端接收第四已调制控制信号，输出端与 第一 NPN管的基极相连；
第二 PNP管的集电极接地， 射极与第二 NPN管的射极相连， 第二 NPN 管的集电极经由第一电阻与 VCC相连， 第一 PNP管的集电极接地， 射极与第 一 NPN管的射极相连， 第一 NPN管的集电极经由第二电阻与 VCC相连； 第一电容的第一端与第二 PNP管的射极以及第二 NPN管的射极相连，第 二电容的第一端与第一 PNP管的射极以及第一 NPN管的射极相连， 第三电容 的两端分别与第一电容以及第二电容的第二端相连，第三电容的两端分别与第 一天线负载端、 第二天线负载端相连。
9. 根据权利要求 1所述的具有射频识别功能的 SIM卡芯片， 其中， 所述解 调电路的解调方法为相干解调或非相干解调。
10. 根据权利要求 1所述的具有射频识别功能的 SIM卡芯片， 其中， 所述非 相干解调为二极管峰值包络解调或平均包络解调。
11. 根据权利要求 1所述的具有射频识别功能的 SIM卡芯片， 其中， 所述调 制电路的调制方法为 ASK或 FSK或 PSK调制。
PCT/CN2009/071325 2008-04-18 2009-04-17 具有射频识别功能的sim卡芯片 WO2009127157A1 (zh)

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