WO2009104861A1

WO2009104861A1 - Wire grid polarizer and manufacturing method thereof

Info

Publication number: WO2009104861A1
Application number: PCT/KR2008/007534
Authority: WO
Inventors: Yong Nam Kim; Sung Jin Ryu; Yong Jae Kim; Jong Wook Huh; Ki Won Park
Original assignee: Miraenanotech Co., Ltd.
Priority date: 2008-02-19
Filing date: 2008-12-18
Publication date: 2009-08-27
Also published as: KR100987024B1; KR20090089671A; TW200937052A

Abstract

Provided are a wire grid polarizer and a manufacturing method thereof. A passivation layer formed of polymer, fluoride, nitride or oxide is coated on a nano structure to a predetermined thickness to thereby increase scratch resistance and corrosion resistance while maintaining the shape and characteristic of a nano structure. A top layer is formed after patterning a metal layer and pores are formed between the top layer and the wire grid polarizer to thereby protect the wire grid structure including metal patterns (Al, Ti, Cr, Ag, NiCr, Au), without changing polarization characteristics of a polarization device such as a wire grid polarizer.

Description

WIRE GRID POLARIZER AND MANUFACTURING METHOD

THEREOF

Technical Field

[1] The present disclosure relates to a nanowire grid polarizer and a manufacturing method thereof.

[2] More particularly, the present disclosure relates to a wire grid polarizer and a manufacturing method thereof, in which passivation layer formed of polymer, fluoride, nitride or oxide is coated on a nano structure to a predetermined thickness to thereby increase scratch resistance and corrosion resistance while maintaining the shape and characteristic of a nano structure, and a top layer is formed after patterning a metal layer and pores are formed between the top layer and the wire grid polarizer to thereby protect the wire grid structure having metal patterns (Al, Ti, Cr, Ag, NiCr, Au), without changing polarization characteristics of a polarization device such as a wire grid polarizer. Background Art

[3] Unlike the CRT, the liquid crystals injected between a thin film transistor (TFT) substrate and a color filter substrate are not a light emitting material that emits light by itself, but a light receiving material that emits light by controlling an amount of an external light. Therefore, the LCD requires a separate backlight assembly that irradiates light onto the liquid crystal panel.

[4] Fig. 1 is a sectional view of a related art LCD. Referring to Fig. 1, the related art

LCD includes a backlight assembly 50 for generating light, and a display unit 40 disposed above the backlight assembly 50 for displaying an image using the light generated from the backlight assembly 50. The backlight assembly 50 includes a lamp unit 51 for emitting the light, and a light guide unit for guiding the light emitted from the lamp unit 51 toward a liquid crystal panel 10. Also, the display unit 40 includes the liquid crystal panel 10, a The liquid crystal panel 10 includes a TFT substrate 11 on which electrodes are formed, a color filter substrate 12, and a liquid crystal layer formed between the TFT substrate 11 and the color filter substrate 12.

[5] Specifically, the lamp unit 51 includes a lamp 51a for emitting the light, and a lamp reflector 51b surrounding the lamp 51a. The light emitted from the lamp 51a is incident on a light guide plate 52, which will be described later. The lamp reflector 51b reflects the emitted light toward the light guide plate 52 to thereby increase an amount of light incident on the light guide plate 52. The light guide unit includes the reflection plate 54, the light guide plate 52, and a plurality of optical sheets 53. The light guide plate 52 is disposed on one side of the lamp unit 51 to guide the light emitted from the lamp unit 51. At this point, the light guide plate 52 guides the light toward the liquid crystal panel 10 by changing a path of light emitted from the lamp unit 51. Furthermore, the reflection plate 54 is disposed under the light guide plate 52. Light leaking out from the light guide plate 52 is again reflected toward the light guide plate 52 by the reflection plate 54.

[6] The optical sheets 53 are disposed above the light guide plate 52 to enhance the efficiency of the light emitted from the light guide plate 52.

[7] A nanowire grid polarizer (NWGP) may be inserted into the optical sheets 53 in order to increase the light efficiency.

[8] The nanowire grid polarizer is used for polarizing visible rays having a wavelength of 400 nm to 800 nm. However, the nanowire grid polarizer is subject to defects due to weak scratch resistance in the operator's working procedures and LCD BLU film array process. Furthermore, the nanowire grid polarizer is subject to metal corrosion and degradation when moisture or heat exists.

[9] Due to those limitations, the capability of the nanowire grid polarizer is reduced or destroyed and thus the function of the polarizer is not well operated. Consequently, the image quality is degraded and the light efficiency is lowered.

[10] Moreover, the related art wire grid polarizer has limitations in long-term integration, durability and custody characteristic due to the scratch resistance and corrosion resistance. Specifically, defects occur due to weak scratch resistance in the operator's treatment and the LCD BLU film array process. Also, when moisture or heat exists, or in the similar application examples, conductive components (metal) are easily corroded or degraded. Due to those limitations, the wire grid's capability of separating polarized light of perpendicular rays is reduced or destroyed and thus the functions of the polarizer and the polarization device are lost. Simply sealing the grids in order to overcome those limitations changes characteristics of the polarizer or polarization device because interface is formed on materials and wire grid components used. Thus, the operation or function of the polarizer and the polarization device will be lost.

[11] Recently, wire grid polarizers which have very small prominences. As shown in Fig.

2, these polarizers comprise a glass substrate 1 on which grid prominences are formed, dielectric films 2 and conductive components 3.

[12] In these kinds of wire grid polarizer, the combined part Y of grid prominences Ia and dielectric film 2 has lower index of refraction than base part X of glass substrate 1. This configuration can enhance efficiency of penetration and reflection by shifting a resonance point which changes very rapidly to short- wavelength side.

[13] Also, the wire grid polarizer in the related art requires expensive semiconductor manufacturing equipment and nano-patterning equipment to manufacture since photolithography processes for forming minute patterns together with reactive ion etching process are indispensable. Disclosure of Invention Technical Problem

[14] Embodiments provide a nanowire grid polarizer which is capable of increasing scratch resistance and corrosion resistance, without changing polarization characteristics of the nanowire grid polarizer.

[15] Also, embodiments provide a manufacturing method of a nanowire grid polarizer which is capable of enhancing optical characteristics in the visible light band by forming metal pattern more accurately on minute patterns by a wet etching process using surface boundaries.

[16] In one embodiment, a nanowire grid polarizer includes: a transparent substrate; a nano structure on the transparent substrate; a passivation layer covering at least a portion of the nano structure; metal patterns on the passivation layer; a top layer on the metal patterns; and voids between the top layer and the nano structure and between the metal patterns.

[17] In another embodiment, a method of manufacturing a nanowire grid polarizer includes: forming a nano structure on a transparent substrate; depositing a passivation layer on the nano structure; forming metal patterns on the passivation; and forming a top layer on the metal patterns such that voids are formed.

[18] In farther another embodiment, a nanowire grid polarizer includes: a transparent substrate; a nano structure on the transparent substrate; metal patterns on the nano structure; a passivation layer covering at least a portion of the nano structure or the metal patterns; a top layer on the passivation layer; and voids between the top layer and the passivation layer.

[19] In still farther another embodiment, a method of manufacturing a nanowire grid polarizer includes: forming a nano structure on a transparent substrate; forming metal patterns on the nano structure; forming a passivation layer in at least a portion of the metal patterns or the nano structure; and forming a top layer on the metal patterns such that voids are formed. [20] The details of one or more embodiments are set forth in the accompanying drawings and the description below. Other features will be apparent from the description and drawings, and from the claims.

Brief Description of the Drawings [21] Figs. 1 and 2 are sectional views of a related art LCD.

[22] Fig. 3 is a sectional view for explaining an operation of a backlight unit using an optical sheet according to an embodiment. [23] Figs. 4 through 9 are sectional views illustrating a method of manufacturing a nanowire grid polarizer according to a first embodiment.

[24] Fig. 10 illustrates a method for forming top layer according to an embodiment.

[25] Figs. 11 and 12 are sectional view illustrating a method of manufacturing a wire grid polarizer according to another embodiment. [26] Figs. 13 through 18 are sectional views illustrating a method of manufacturing a nanowire grid polarizer according to a second embodiment. [27] Figs. 19 and 20 are sectional views of a nanowire grid polarizer according to another embodiment.

Best Mode for Carrying Out the Invention [28] Reference will now be made in detail to the embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. [29] Fig. 3 is a sectional view for explaining an operation of a backlight unit using an optical sheet according to an embodiment. [30] The backlight unit includes a lamp unit 60 and an optical sheet. The lamp unit includes a light source 36, a lamp reflector 37, a light guide plate 38, and a reflection plate 39. [31] The optical sheet 41 includes a nanowire grid polarizer according to an embodiment.

The optical sheet 41 may include a diffusion sheet for diffusing light, a condensing sheet for condensing the light, and a diftusion/condensing integrated sheet for diffusing and condensing the light. [32] Light generated from the light source 36 is reflected by the lamp reflector 37 and the reflection plate 39 and is transmitted through the light guide plate 38 to a liquid crystal panel 34. A top polarizer 33 is disposed above the liquid crystal panel 34, and a bottom polarizer 35 disposed under the liquid crystal panel 34. For explanation, a region 31 is defined as a region where the light from the lamp unit 60 does not pass through the optical sheet 41, and a region 32 is defined as a region where the light from the lamp unit 60 passes through the optical sheet.

[33] In the region 31 where the optical sheet 41 is not installed, the bottom polarizer 35 transmits only P- wave components of the light from the lamp unit 60, but blocks S- wave components. Therefore, less than 50% of the generated light is used as a valid light source of the liquid crystal panel.

[34] In the region 32 where the optical sheet 41 is installed, only P- wave components of the light from the lamp unit 60 is transmitted by the bottom polarizer 35, and S-wave components are reflected to the lamp unit 60 by the optical sheet 41 and scattered by the light guide plate 38 so that the polarization is offset. After passing through the light guide plate 38, the light is again reflected toward the liquid crystal panel by the reflection plate 39. At this point, only P-waves components are transmitted, but S-wave components are reflected. The S-wave components pass through the light guide plate 38 and are reflected toward the liquid crystal panel by the reflection plate 39.

[35] In Fig. 3, light intensity is indicated by thickness of an arrow in the region 32 where the optical sheet is arranged. That is, about half of the light from the lamp unit 60 is primarily used as the light source, and the rest half of the light is again used as the light source. In this way, the light use efficiency can be enhanced.

[36] Figs. 4 through 9 are sectional views illustrating a method of manufacturing a nanowire grid polarizer according to a first embodiment. In the nanowire grid polarizer according to the first embodiment, a passivation layer is disposed between a nano structure and a metal pattern.

[37] Referring to Fig. 4, a nano structure 102 is formed over a transparent substrate 101.

The transparent substrate 101 may be a transparent polymer substrate or a thin glass substrate.

[38] Preferably, the thickness of the nano structure 102 is 50-750/M. Preferably, the index of refraction of the transparent substrate 101 is 1.1-2.0 and more preferably 1.4-1.6. Preferably, the nano structure 102 may be formed as a plurality of parallel lines.

[39] The nano structure 102 may be formed using an imprint process, for example, a roll- to-roll type imprint process or a stamp type imprint process. Alternatively, the nano structure 102 may be formed using a method disclosed in US application No. 11/378,909 which is assigned to the assignee of this application, a imprint process using a belt-shaped mold or a roll-to-roll type imprint process.

[40] The nano structure 102 may be formed of a thermosetting resin or a UV curable resin. Preferably, the height of the nano structure 102 is 5~1000nm, more preferably, 90~200nm. The width of the nano structure 102 when measured at the 2/3 point of the height is preferably 5~100nm, and more preferably 70~100nm. The pitch between the nano structure 102 depends upon practical applications but preferably 100~300nm, and more preferably 150~205nm. Preferably, the index of refraction of the nano structure 102 is 1.0-2.0 and more preferably 1.4-1.6.

[41] Referring to Fig. 5, a passivation layer 103 is formed over the nano structure 102.

The passivation layer 103 may be formed of polymer, fluoride, nitride, or oxide. The polymer may be any one of polypropylene, acryl, PVC, and parylene. Also, the polymer may be a polymer generated by condensation polymerization of methylsilane, ethylsilane, methyltrichlorosilane, dimethylsilane, trimethylsilane, tetramethylsilane, trimethylethoxysilane, methyltriethoxysilane, hexamethyldisiloxane, tetramethyl- disilazane, hexamethyldisilane, or tetramethyldisiloxane.

[42] The fluoride may be any one of BaF ₂,CaF₂₅CeF₃₅LaF₃₅PoF ₂,LiF,MgF₂,Na₃AlF₆

,NaF,SrF₂,andYF₃ andthenitridemaybeanyoneofAlN,BN,HfN,NbN,Si₃N₄,TaN,TiN,VN, andZrN. The oxide may be any one of Al₂O₃,Bi₂O₃,CaO,CeO,Cr₂O₃,CuO,Eu₂O₃,Fe₂O₃ ,Ga₂O₃,GeO₂,HfO₂,Y₂O₃,I.C.O,I.T.O,I.Z.O,La₂O₃,MgO,MnO₂,Mn₃θ₄,Nb₂O₅,Nd₂O₃,Ni 0,PoO₅Pr ₆O₁₁₅Sb₂O₃₅SiO₅SiO ₂₅Si_xO_y5SnO₂₅Ta₂O₅JiOJiO₂₅V₂O₅₅WO₂₉₅WO₃₅Yb₂O₃₅Zn O₅ZrO₂₅Y-S-Z₅BaTiO₃₅BaZrO₃₅LaAlO₃₅LaGaO₃₅LiNbO₃₅Li₃PO₄₅PoTiO ₃,PoZr0 ₃,andSr TiO₃. Among them, non-conductive materials may be used.

[43] The thickness of the passivation layer 103 may be less than 3,000 A and preferably

1-lOOOnm, and more preferably 20~30nm. The index of refraction of the passivation layer 103 is preferably 1.1-2.58, and more preferably 1.46-1.63.

[44] The passivation layer 103 may be deposited using chemical vapor deposition (CVD), sputtering, or evaporation. In this case, the deposition shape or range of the passivation layer 103 may be changed by controlling the deposition method, the deposition direction or the processing time. For example, although Fig. 5 shows that the passivation layer 103 is uniformly deposited over the nano structure 102, the present invention is not limited thereto. If the deposition process is finished before the sufficient deposition, the passivation layer 103 may be deposited on only the upper portion of the nano structure. This is because the deposition is first performed from the upper portion of the nano structure 102.

[45] In the case of the sputtering and evaporation process, the passivation layer 103 may be partially deposited on only one side of the nano structure 102 by changing the deposition direction. Mode for the Invention

[46] Referring to Fig. 6, a metal layer 104 is deposited over the passivation layer 103. The metal layer 104 may be any one of Al, Ti, Cr, Ag, Ni/Cr alloy, and Au

[47] The metal layer may be deposited using the sputtering process. Since the metal layer

104 is deposited on the passivation layer 103, the passivation layer 103 also serves as an adhesive layer to adhere the metal layer 104 to the nano structure 102.

[48] As illustrated in Fig. 6, if the metal is deposited on the nano structure 102, surface boundaries 105 having voids 105 are formed inside the metal layer 104 due to inherent characteristics of metal particles.

[49] Specifically, Fig. 6 shows that the surface boundaries 105 are formed inside the metal layer deposited on the nano structure. In particular, the surface boundaries 105 are formed in the metal disposed in a region between wire grid convex portions.

[50] Due to those surface boundaries, surface boundary scattering of carrier electrons is increased and thus resistivity is increased. However, in the current embodiment, the surface boundaries 105 formed inside the metal layer 104 are used in an etching process for patterning the metal layer 104.

[51] That is, when a reactive compound for a wet etching flows into the surface boundaries 105 formed inside the metal layer 104, an etching rate is increased centering on the regions where the surface boundaries 105 are formed. Thus, an etching rate with respect to the metal formed on the nano structure 102 becomes relatively low.

[52] The wet etching may use a nitric acid, a phosphoric acid, a fluoric acid, an acetic acid, or a mixture thereof as an etchant. A dry etching may be used according to embodiments.

[53] Referring to Fig. 7, metal patterns 104 are formed over the passivation layer 103 through the etching process.

[54] The height of the metal pattern 104' is preferably 10~1000nm and more preferably

80~150nm. The width of the metal pattern 104' is preferably 10~200nm, and more preferably 70~100nm. The pitch of the metal pattern 104' therebetween is preferably 20~120nm and more preferably 150~205nm. The index of refraction of the metal pattern 104' is preferably 0.97-6L

[55] According to embodiments, an additional passivation layer may be coated over the metal patterns 104' in order to increase adhesion between the metal patterns 104' and the nano structure 102 or between the nano structure 102 and the transparent substrate 101. [56] Referring to Fig. 8, a top layer material 106 is deposited over the metal patterns 104'.

[57] The top layer material 106 may be any one of polypropylene, acryl, PVC, parylene,

SiOzJTO^nOΛZOΛ^Os^rOz^gOzJZOJiOz^bzOs^gFz^ixOy^nddiamondlikec arbon(DLC). [58] The top layer material 106 may be deposited using PE-CVD, sputtering, or evaporation. [59] As illustrated in Fig. 7, the metal pattern 104' has an apex portion and a valley portion. The apex portion of the metal pattern is a high energy state and the valley portion of the metal pattern is a low energy state. That is, the apex portion is a position which is easy to deposit the material, and the valley portion is a position which is difficult to deposit the material. [60] If the top layer material is deposited using the above-described deposition methods, the deposition thickness increases with time. The speed of increasing the deposition material thickness with the deposition time is different at the apex portion and the valley portion of the metal pattern. [61] Referring to Fig. 10, the material is thinly and uniformly deposited on the metal pattern at the early deposition stage, but much material is deposited on the upper portion of the metal pattern 104' while there is almost no change of the deposition material thickness at the valley portion, as illustrated on the right side of Fig. 10. [62] If the deposition time farther increases in the state of Fig. 8, the top layer materials deposited on the metal patterns 104 are connected together to form a top layer 107.

Simultaneously, the voids 108 are formed between the top layer 107 and the nano structure 102 and between the top layer 107 and the metal patterns 104'. [63] The deposition time taken to connect the top layer materials on the metal patterns may be changed according to the deposition method, the top layer material, and other processing environments. [64] Furthermore, the deposition thickness to be deposited on the metal patterns in order to connect the top layer materials on the metal patterns may be changed according to kinds of the top layer material. [65] When SiO₂ is used as the top layer materials 106, the top layer materials 106 begin to be connected when the top layer materials 106 are deposited on the metal patterns 104' to a thickness of 180nm. When the top layer materials 106 are deposited to about

200-300 nm, the stable top layer 107 is formed. [66] The thickness of the top layer 107 may depend upon material employed but preferably 10~1000nm, and more preferably 200~250nm. Preferably, the index of re- fraction of the top layer 107 is 1.38-2.58.

[67] Referring to Fig. 9, the top surface of the top layer 107 may not be flat after the top layer 107 is formed. Thus, the top surface of the top layer 107 may be planarized through an appropriate polishing process. A chemical mechanical polishing (CMP) process may be used as the polishing process.

[68] According to the current embodiment, if the top layer 107 is formed of a single material while forming the voids 108 between the top layer 107 and the metal patterns 104 and between the top layer 107 and the nano structure 102, optical characteristic, scratch resistance and workability can be enhanced due to the voids 108.

[69] That is, if the voids are formed between the metal patterns of the wire grid polarizer, the polarized light separated from the visible rays and semi visible rays are not changed unnecessarily, and the durability, scratch resistance and workability can be enhanced while maintaining the polarization Sanction.

[70] The deposition thickness of the top layer 107 may be changed variously according to embodiments and may be adjusted preferably up to 10 to 2μm, and more preferably 200~250nm, considering polarization characteristic, durability and scratch resistance necessary for products. Preferably, the index of refraction of the top layer 107 is 1.38-2.58.

[71] Figs. 11 and 12 are sectional view illustrating a method of manufacturing a wire grid polarizer according to another embodiment.

[72] As illustrated in Figs. 11 and 12, the deposition direction of the top layer material

110 may be changed in an inclined direction. That is, the top layer 111 may be formed by inclining the deposition direction of the top layer material 110.

[73] In this way, it is possible to reduce the thickness of the top layer 111 to be deposited on the metal patterns 104' until the voids 112 are formed. That is, the voids are formed while reducing the deposition thickness, thereby enhancing the durability and maintaining the optical characteristic.

[74] The deposition direction of the deposition material being the top layer material 110 may be changed according to the deposition material and the deposition method. Also, various modifications can be made according to embodiments.

[75] The method of depositing the material in the inclined direction may be performed using PE-CVD, sputtering or evaporation, and the method of inclining the material may be performed using a method of inclining the direction of spraying the material.

[76] Figs. 13 through 18 are sectional views illustrating a method of manufacturing a nanowire grid polarizer according to a second embodiment. In the nanowire grid polarizer according to the second embodiment, metal patterns 204 are formed over a nano structure 202, and a passivation layer 203 is formed to cover at least a portion of the nano structure 202 or the metal patterns 204'.

[77] Referring to Fig. 13, the nano structure 202 is formed over a transparent substrate

201. The nano structure 202 may be formed using an imprint process, for example, a roll-to-roll type imprint process or a stamp type imprint process.

[78] Referring to Fig. 14, a metal layer 204 is deposited over the nano structure 202. The deposition may be performed using a sputtering process. As described above, surface boundaries 205 having voids 205 are formed inside the metal layer 204 due to inherent characteristics of metal particles.

[79] Referring to Fig. 15, metal patterns 204 are formed by patterning the metal layer 204 using the same method as the first embodiment.

[80] A passivation layer 203 is formed in at least a portion of the metal patterns 204' or the nano structure 202. The passivation layer 203 may be deposited using chemical vapor deposition (CVD), sputtering, or evaporation.

[81] In this case, the deposition shape or range of the passivation layer 203 may be changed by controlling the deposition method, the deposition direction or the processing time. For example, although Fig. 16 shows that the passivation layer 203 is uniformly deposited over the nano structure 202 or the metal patterns 204', the present invention is not limited thereto. If the deposition process is finished before the sufficient deposition, the passivation layer 203 may be deposited on only the upper portion of the metal patterns 204'. This is because the deposition is first performed from the upper portion of the metal patterns 204'.

[82] The thickness of the passivation layer 203 may be less than 3,000 A

[83] According to embodiments, before the metal patterns 204' are stacked, an additional passivation layer may be stacked in order to increase adhesion between the metal patterns 204' and the nano structure 202.

[84] Referring to Fig. 17, a top layer material 206 is deposited over the metal patterns

204'.

[85] If the deposition time farther increases in the state of Fig. 17, the top layer materials deposited on the metal patterns 204 are connected together to form a top layer 207, as illustrated in Fig. 18. Simultaneously, the voids 208 are formed between the top layer 207 and the nano structure 202 and between the top layer 207 and the metal patterns 204'.

[86] As illustrated in Fig. 16, when the passivation layer 203 is stacked over the nano structure 202 or the metal patterns 204', it may be stacked uniformly over the entire top surface, but may be stacked in other shapes.

[87] For example, as illustrated in Fig. 19, the passivation layer 203 may be formed on only the top surface of the metal patterns 204' and the top layer may be formed on the passivation layer 203. As illustrated in Fig. 20, the passivation layer 203 may be formed except the top surface of the metal patterns 204' and the top layer may be formed thereon.

[88] For example, the structure of Fig. 19 may be obtained by controlling the deposition time in the deposition of the passivation layer 203. The structure of Fig. 20 may be obtained by removing only the passivation layer 203 deposited on the upper end of the metal patterns 204 using a chemical mechanical polishing (CMP) process or a dry etching process.

[89] In the case of the nanowire grid polarizer of Fig. 19, the passivation layer 203 is formed on only the top surface of the metal patterns 204 and thus it protects the surface of the metal layer and prevent the optical scratch, even though it cannot serve to adhere the metal patterns 204 to the nano structure 202.

[90] According to embodiments, the nano structure 202 is not formed and the metal layer

204 can be formed directly on the substrate. Then, the top layer may be deposited on the metal layer 204.

[91] According to the embodiments, since the passivation layer is coated on the nanowire grid polarizer to a predetermined thickness, the adhesion and scratch resistance of the wire grid can be increased while maintaining the polarizing function of the polarizer, thereby enhancing the treatment, integration, durability, and custody characteristics.

[92] According to the embodiments, the corrosion resistance, chemical resistance, abrasion resistance, and heat resistance of the wire grid polarizer can be enhanced by forming the top layer on the components of the wire grid using PE-CVD, sputtering or evaporation.

[93] Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure.

[94] More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art. [95] [96]

Claims

[1] A nanowire grid polarizer, comprising: a transparent substrate; a nano structure on the transparent substrate; a passivation layer covering at least a portion of the nano structure; metal patterns on the passivation layer; a top layer on the metal patterns; and voids between the top layer and the nano structure and between the metal patterns. [2] The nanowire grid polarizer according to claim 1, wherein the passivation layer has a thickness of 3,000 A or less. [3] The nanowire grid polarizer according to claim 1, wherein the passivation layer is formed of any one of polypropylene, acryl, PVC, parylene, SiO₂

,ITO,ZnO,AZO,Al₂O₃,CrO₂,MgO₂,IZO,TiO₂,MgF₂,SixOy,and Nb ₂O₅. [4] The nanowire grid polarizer according to claim 1, wherein the top layer is formed by connection of deposition materials grown on the metal patterns. [5] The nanowire grid polarizer according to claim 1, wherein the top layer is formed of any one of polypropylene, acryl, PVC, parylene, SiO₂

,ITO,ZnO,AZO,Al₂O₃,CrO₂,MgO₂,IZO,TiO₂,Nb₂O₅,MgF₂,SixOy,anddiamondlik ecarbon(DLC). [6] A method of manufacturing a nanowire grid polarizer, the method comprising: forming a nano structure on a transparent substrate; depositing a passivation layer on the nano structure; forming metal patterns on the passivation; and forming a top layer on the metal patterns such that voids are formed. [7] The method according to claim 6, wherein the depositing of the passivation layer on the nano structure comprises forming the passivation layer to cover at least a portion of the nano structure. [8] The method according to claim 6, wherein the forming of the metal patterns on the passivation layer comprises: forming a metal layer on the passivation layer; and etching a portion of the metal layer. [9] The method according to claim 8, wherein the etching a portion of the metal layer comprises: performing a wet etching to render an anisotropy etching by surface boundaries formed in the metal layer. [10] The method according to claim 5, wherein the forming of the top layer comprises: growing top layer materials on the metal patterns; and connecting the grown top layer materials to form the top layer. [11] The method according to claim 10, wherein the growing of the top layer materials on the metal patterns comprises depositing the top layer materials using any one of PE-CVD, sputtering, and evaporation. [12] The method according to claim 10, wherein the forming of the top layer comprises depositing the top layer materials at an inclined angle. [13] The method according to claim 6, further comprising polishing the top surface of the top layer. [14] A nanowire grid polarizer, comprising: a transparent substrate; a nano structure on the transparent substrate; metal patterns on the nano structure; a passivation layer covering at least a portion of the nano structure or the metal patterns; a top layer on the passivation layer; and voids between the top layer and the passivation layer. [15] The nanowire grid polarizer according to claim 14, wherein the passivation layer has a thickness of 3,000 A or less. [16] The nanowire grid polarizer according to claim 14, wherein the passivation layer is formed of any one of polypropylene, acryl, PVC, parylene, SiO₂

,πO,ZnO,AZO,Al₂O₃,CrO₂,MgO₂,IZO,TiO₂,andNb₂O₅. [17] The nanowire grid polarizer according to claim 13, wherein the top layer is formed by connection of deposition materials deposited on the metal patterns. [18] The nanowire grid polarizer according to claim 13, wherein the top layer is formed of any one of polypropylene, acryl, PVC, parylene, SiO₂

,ITO,ZnO,AZO,Al₂O₃,CrO₂,MgO₂,IZO,TiO₂,Nb₂O₅,MgF₂,SixOy,anddiamondlik ecarbon(DLC). [19] A method of manufacturing a nanowire grid polarizer, the method comprising: forming a nano structure on a transparent substrate; forming metal patterns on the nano structure; forming a passivation layer in at least a portion of the metal patterns or the nano structure; and forming a top layer on the metal patterns such that voids are formed. [20] The method according to claim 19, wherein the forming of the metal patterns on the nano structure comprises: depositing a metal layer on the nano structure; and etching a portion of the metal layer. [21] The method according to claim 20, wherein the etching a portion of the metal layer comprises: performing a wet etching to render an anisotropy etching by surface boundaries formed in the metal layer. [22] The method according to claim 19, wherein the forming of the top layer comprises: growing top layer materials on the metal patterns; and connecting the grown top layer materials to form the top layer. [23] The method according to claim 22, wherein the growing of the top layer materials on the metal patterns comprises depositing the top layer materials using any one of PE-CVD, sputtering, and evaporation. [24] The method according to claim 22, wherein the growing of the top layer materials on the metal patterns comprises depositing the top layer materials at an inclined angle.