WO2009031408A1 - Exhaust member for semiconductor single crystal production - Google Patents
Exhaust member for semiconductor single crystal production Download PDFInfo
- Publication number
- WO2009031408A1 WO2009031408A1 PCT/JP2008/064835 JP2008064835W WO2009031408A1 WO 2009031408 A1 WO2009031408 A1 WO 2009031408A1 JP 2008064835 W JP2008064835 W JP 2008064835W WO 2009031408 A1 WO2009031408 A1 WO 2009031408A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- treated
- exhaust member
- iron
- exhaust
- exhaust pipe
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Chemically Coating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Even when the flow of a dopant, a dopant oxide, an amorphous material in a furnace into an exhaust pipe is continued for a long period of time, the suppression of unfavorable phenomena of the fixation of them onto the internal surface of an exhaust member and the formation of an amorphous layer can avoid cleaning work, which requires a large man-hour, and can finish the cleaning work simply in a short time. When the surface, to be treated, of an exhaust member such as an exhaust pipe is formed of an iron and steel material, the surface to be treated is plated with chromium having a higher chemical activity than iron. Alternatively, when the surface to be treated in an exhaust member such as an exhaust pipe is formed of an iron and steel material, the surface to be treated is plated with fluororesin-added electroless nickel.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-227695 | 2007-09-03 | ||
| JP2007227695A JP2009057264A (en) | 2007-09-03 | 2007-09-03 | Evacuation member for manufacturing semiconductor single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009031408A1 true WO2009031408A1 (en) | 2009-03-12 |
Family
ID=40428728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/064835 WO2009031408A1 (en) | 2007-09-03 | 2008-08-20 | Exhaust member for semiconductor single crystal production |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2009057264A (en) |
| WO (1) | WO2009031408A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010059028A (en) * | 2008-09-05 | 2010-03-18 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Evacuation member for apparatus for manufacturing semiconductor single crystal |
| CN109797426A (en) * | 2019-03-11 | 2019-05-24 | 上海新昇半导体科技有限公司 | A kind of crystal pulling apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6828674B2 (en) | 2017-12-20 | 2021-02-10 | 株式会社Sumco | Cleaning method, silicon single crystal manufacturing method, and cleaning equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000219591A (en) * | 1999-01-28 | 2000-08-08 | Mitsubishi Materials Silicon Corp | Device and method for cleaning inert gas evacuation system of single crystal pulling-up machine |
| JP2002275632A (en) * | 2001-03-19 | 2002-09-25 | Tokyo Electron Ltd | Treatment equipment |
| JP2004249267A (en) * | 2002-12-25 | 2004-09-09 | Daido Steel Co Ltd | Method for preventing adherence of evaporated component of trapping apparatus and trapping apparatus |
| JP2005187842A (en) * | 2003-12-24 | 2005-07-14 | Nippon Futsuso Kogyo Kk | Exhaust system and its maintenance method |
-
2007
- 2007-09-03 JP JP2007227695A patent/JP2009057264A/en not_active Withdrawn
-
2008
- 2008-08-20 WO PCT/JP2008/064835 patent/WO2009031408A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000219591A (en) * | 1999-01-28 | 2000-08-08 | Mitsubishi Materials Silicon Corp | Device and method for cleaning inert gas evacuation system of single crystal pulling-up machine |
| JP2002275632A (en) * | 2001-03-19 | 2002-09-25 | Tokyo Electron Ltd | Treatment equipment |
| JP2004249267A (en) * | 2002-12-25 | 2004-09-09 | Daido Steel Co Ltd | Method for preventing adherence of evaporated component of trapping apparatus and trapping apparatus |
| JP2005187842A (en) * | 2003-12-24 | 2005-07-14 | Nippon Futsuso Kogyo Kk | Exhaust system and its maintenance method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010059028A (en) * | 2008-09-05 | 2010-03-18 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Evacuation member for apparatus for manufacturing semiconductor single crystal |
| CN109797426A (en) * | 2019-03-11 | 2019-05-24 | 上海新昇半导体科技有限公司 | A kind of crystal pulling apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009057264A (en) | 2009-03-19 |
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