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WO2009028753A1 - Semiconductor manufacturing apparatus - Google Patents

Semiconductor manufacturing apparatus Download PDF

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Publication number
WO2009028753A1
WO2009028753A1 PCT/KR2007/004458 KR2007004458W WO2009028753A1 WO 2009028753 A1 WO2009028753 A1 WO 2009028753A1 KR 2007004458 W KR2007004458 W KR 2007004458W WO 2009028753 A1 WO2009028753 A1 WO 2009028753A1
Authority
WO
WIPO (PCT)
Prior art keywords
reaction chamber
semiconductor substrates
gas nozzle
pair
boat
Prior art date
Application number
PCT/KR2007/004458
Other languages
French (fr)
Inventor
Taek-Yong Jang
Byung-Il Lee
Young-Ho Lee
Seung Beom Baek
Original Assignee
Terasemicon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Terasemicon Corporation filed Critical Terasemicon Corporation
Publication of WO2009028753A1 publication Critical patent/WO2009028753A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to a semiconductor manufacturing apparatus; and more particularly, to the semiconductor manufacturing apparatus for forming an epitaxial layer on a pair of semiconductor substrates by processing the semiconductor substrates which stand in a vertical direction and face each other.
  • an epitaxial layer is formed by growing a monocrystalline layer having the same or different material as or from a monocrystalline wafer on a surface of the monocrystalline wafer.
  • a semiconductor device may have good characteristics if formed on the epitaxial layer of good quality.
  • a chemical vapor deposition (CVD) is widely used as a method for forming a silicon epitaxial layer, in which a silicon monocrystalline is grown by supplying silicon source gas such as SiCl 4 , SiHCl 3 , SiH 2 Cl 2 or SiH 4 etc. along with carrier gas such as hydrogen onto a silicon wafer heated at a high temperature.
  • silicon source gas such as SiCl 4 , SiHCl 3 , SiH 2 Cl 2 or SiH 4 etc.
  • carrier gas such as hydrogen
  • the semiconductor manufacturing apparatus in accordance with the present invention can improve the productivity significantly in that an epitaxial layer of good quality can be grown on each of the wafers at the same time .
  • Fig. IA provides an explanatory view showing an external appearance of a semiconductor manufacturing apparatus in accordance with the present invention
  • Fig. IB depicts a conceptual view illustrating an arrangement of a process gas nozzle and an exhaust gas nozzle of the semiconductor manufacturing apparatus in accordance with the present invention
  • FIG. 2A represents a deal drawing illustrating a rotary table in accordance with the present invention
  • Figs. 2B and 2C present enlarged views illustrating rotary tables and a driving part connected to the rotary tables, respectively;
  • Fig. 3A provides a cross-sectional view showing the semiconductor manufacturing apparatus which includes the rotary tables;
  • Fig. 3B furnishes an enlarged cross-sectional view illustrating an upper portion of Fig. 3A;
  • Fig. 3C illustrates a diagram showing a detailed view of a portion "A" in Fig. 3A;
  • Fig. 3D depicts a cross-sectional view showing configuration of an anti-corrosive gas nozzle
  • Fig. 4 offers a conceptual view illustrating the semiconductor substrate and a nozzle arranged in a divided heating area
  • Fig. 5A represents a diagram illustrating a profile of Fig. IB
  • Fig. 5B depicts an enlarged cross-sectional view of a lifting part of Fig. 5A.
  • Fig. 5C shows a cross-sectional view corresponding to Fig. 5A. [Best Mode]
  • a semiconductor manufacturing apparatus including: a reaction chamber for providing an airtight process space; a boat for loading/unloading a pair of -semiconductor substrates which are facing each other into/from the reaction chamber, wherein the boat includes a pair of susceptors having a shape of a ring and a pair of rotary tables to be rotatably supported by a plurality of supporting rollers, each of the semiconductor substrates being mounted onto each of the susceptors and each of the susceptors being mounted onto each of the rotary tables, respectively; a pair of heaters, arranged at backsides of the pair of the semiconductor substrates, for performing an epitaxial process in the reaction chamber; a process gas nozzle, installed to encircle an upper fringe of the semiconductor substrates, for supplying a process gas; an exhaust gas nozzle, installed to encircle a lower fringe of the semiconductor substrates, for exhausting the process gas; and an anti-corrosive gas nozzle
  • Fig. IA provides an explanatory view showing an external appearance of a semiconductor manufacturing apparatus in accordance with the present invention
  • Fig. IB depicts a conceptual view illustrating an arrangement of a process gas nozzle and an exhaust gas nozzle of the semiconductor manufacturing apparatus in accordance with the present invention
  • FIG. 2A represents a deal drawing illustrating a rotary table in accordance with the present invention
  • Figs. 2B and 2C present enlarged views illustrating rotary tables and a- driving part connected to the rotary tables, respectively;
  • Fig. 3A provides a cross-sectional view showing the semiconductor manufacturing apparatus which includes the rotary tables;
  • Fig. 3B furnishes an enlarged cross- sectional view illustrating an upper portion of Fig. 3A;
  • Fig. 3C illustrates a diagram showing a detailed view of a portion "A" in Fig. 3A;
  • Fig. 3D depicts a cross- sectional view showing configuration of an anti-corrosive gas nozzle
  • Fig. 4 offers a conceptual view illustrating the semiconductor substrate and a nozzle arranged in a divided heating area
  • Fig. 5A represents a diagram illustrating a profile of Fig. IB
  • Fig. 5B depicts an enlarged cross-sectional view of a lifting part of Fig. 5A
  • Fig. 5C shows a cross-sectional view corresponding to Fig. 5A.
  • Fig. IA provides an explanatory view showing an external appearance of a semiconductor manufacturing apparatus in accordance with the present invention
  • Fig, IB depicts a conceptual view illustrating an arrangement of a process gas nozzle and an exhaust gas nozzle of the semiconductor manufacturing apparatus in accordance with the present invention.
  • the semiconductor manufacturing apparatus in accordance with the present invention includes a reaction chamber 24 for providing an airtight process space.
  • the reaction chamber 24 has room capable of a boat 22 on which a pair of opposed semiconductor substrates 100 and a pair of rotary tables 18 for supporting the semiconductor substrates 100 may be installed.
  • a process gas nozzle 76 is formed at an upper portion of the reaction chamber 24 and an exhaust nozzle 78 is formed at a lower portion of the reaction chamber 24 in order to establish a gas flow from the upper portion toward the lower portion of the reaction chamber 24.
  • a heater 80 for establishing a high temperature environment in the reaction chamber 24 and a driving part 26 connected to a plurality of supporting rollers 20 of the rotary tables 18 are arranged at both sides of the reaction chamber 24.
  • the boat 22 includes a boat cap 82 for providing an airtight space to the reaction chamber 24 by blocking a backside of the rotary tables 18 introduced into the reaction chamber 24, wherein the boat cap 82 is mounted on a moving rail 84.
  • the semiconductor substrates 100 are mounted on a pair of susceptors 10 of the boat 22 by means of an end effector (not shown) and the susceptors 10 are mounted on the rotary tables 18 by means of the end effector.
  • the rotary table 18 is divided into the susceptor 10 and a supporting panel 14.
  • the susceptor 10 is attached to the rotary table 18 through rear attaching means 16. Also, the susceptor 10 holds the semiconductor substrate 100 through front attaching means 12 and the supporting panel 14.
  • the susceptor 10 is open to a front side of the semiconductor substrate (s) 100 (i.e., a process reaction side) in such a manner that a circumference of the front side of the semiconductor substrate 100 interferes with the susceptor 10 slightly.
  • the supporting panel 14 with a shape of a ring is attached to the susceptor 10 by means of the front attaching means 12 in such a manner that a circumference of a backside of the semiconductor substrate 100 interferes with the supporting panel 14 slightly. Accordingly, the semiconductor substrate 100 is not pressurized by the front attaching means 12.
  • the rotary table 18 has a shape of a convex dish in order to closely make the loaded semiconductor substrates 100 face each other, wherein a protrusion of a driving circumference portion 28 is formed at the circumference of the rotary table 18 and in contact with the supporting roller 20.
  • an antifouling ring 30 is preferably protruded on the circumference of the rotary table 18 between the driving circumference portion 28 and the semiconductor substrate 100 so as to surround the semiconductor substrate 100.
  • the antifouling ring 30 serves as a protrusion structure capable of physically coping with the penetration of the minute dust.
  • an atmospheric gas nozzle 38 for supplying an atmospheric gas to space between the rotary tables 18 facing each other is formed at the reaction chamber 24 in order to maintain an atmosphere in the reaction chamber 24 and prevent the penetration of the minute dust.
  • the kind of the provided atmospheric gas may be H2.
  • a purge gas nozzle 38 for supplying purge gas to space between the rotary tables 18 facing each other is formed at the reaction • chamber 24 in order to prevent an unnecessary deposition on an outer wall of the process gas nozzle 76 which may be caused by a back- streaming process gas.
  • the kind of the provided purge gas may be H 2 .
  • the purge gas injected into the reaction chamber 24 is discharged through a purge exhaust pipe 122 formed at a standby chamber 120.
  • the semiconductor substrates 100 stand in a vertical direction and face each other.
  • the rotary tables 18 can be rotated by the supporting rollers 20.
  • any one of the supporting rollers 20 of the rotary tables 18 includes a connecting means 52 having a spline groove used for connecting to a driving shaft 48 of the driving part 26.
  • the driving part 26 includes a supporting frame 94 formed at the outside of the reaction chamber 24, and a rail 142 and a transferring panel 44 for sliding along the rail 142 are formed at the supporting frame 94.
  • a transferring unit 46 for making the transferring panel 44 go and return is formed at the supporting frame 94, and a driving motor 50 having the driving shaft 48 for rotating the supporting rollers 20 is formed at the transferring panel 44.
  • any one of the supporting rollers 20 of the rotary tables 18 includes the connecting means 52 which comes in contact with the driving shaft 48 as described above.
  • the reaction chamber 24 is sealed by the driving part 26 which is in contact therewith. Since the purge gas such as the explosive H 2 is introduced into the reaction chamber 24, it is necessary to prevent the purge gas from being flowing out of the reaction chamber 24. Also, in order to provide a low pressure (a vacuum) environment for carrying out the process and prevent the outflow of a waste gas (a poison gas) during the process, it is necessary to seal the reaction chamber 24.
  • an anti-corrosive gas nozzle 150 which discharges anti-corrosive gas is arranged at a circumference of the heaters 80 (Refer to Figs. 3C and 3D) .
  • the anti-corrosive gas nozzle 150 is necessary to protect a first bellows tube 86 from a corrosion which results from a contact between the first bellows tube 86 and cleaning gas(HF/HCl) that is provided for cleaning a surface of the semiconductor substrates 100 during the epitaxial process. Corrosion on the first bellows tube 80 frees the airtightness between the reaction chamber mounting ring 124 and the heater mounting ring 114, thereby having a bad effect on the characteristics of the epitaxial layer.
  • the anti-corrosive gas nozzle 150 includes a ring- shaped connecting body 152 and a gas outlet 154.
  • the connecting body 152 is installed inside the first bellows tube 86, i.e., around an outer circumference of the heater cover 81 included in the heater 80.
  • a plurality of gas outlets 154 are installed on the connecting body 152 at regular intervals.
  • a supply pipe 156 which supplies the anti-corrosive gas from outside is connected to the connecting body 152.
  • the supply pipe 156 may supply the anti-corrosive gas in order to protect the first bellows tube 86 from the corrosion, wherein the anti-corrosive gas may include H 2 .
  • the anti-corrosive gas which is supplied through the supply pipe 156 discharges through the connecting body 152 and the plurality of the gas outlets 154, and therefore, prevents an inflow of the cleaning gas(HF/HCl) which can cause corrosion on the first bellows tube 86.
  • each element of the heaters 80 including a heater loading part 92 will now be described in more detail with reference to Fig. IA, Fig. IB and Fig 4.
  • the driving part' 26 is omitted in order not to superimpose the driving part 26 on the heater loading part 92.
  • the heaters 80 have a symmetrical structure, only one half of the heaters 80 is shown in the drawings for convenience' sake .
  • each of the rotary tables 18 is rotatably mounted on the boat 22 while the circumferences of the rotary tables 18 are in contact with the supporting rollers 20. Also, each of the rotary tables 18 has a shape of the convex dish which is convex in a direction toward the semiconductor substrate 100 in order to closely face the loaded semiconductor substrates 100 each other inside the contact lines of the supporting rollers 20 and the rotary tables 18.
  • the semiconductor substrates 100 When the semiconductor substrates 100 are loaded on the rotary tables 18, the semiconductor substrates 100 may stand in the vertical direction and face each other, and further, the rotary tables 18 may be rotated by the operation of the supporting rollers 20 as mentioned above.
  • the heater 80 stands by at the outside of the rotary tables 18, and after the loading of the semiconductor substrates 100 is completed, the heater 80 is inserted into a concave groove of the rotary tables 18 by means of the heater loading part 92 to thereby approach the backside of the semiconductor substrates 100.
  • the heater 80 can be separated from the reaction chamber 24, and the first bellows tube 86 can intermediate between the heater 80 and the reaction chamber 24.
  • the first bellows tube 86 is connected to the reaction chamber mounting ring 112 mounted by surrounding an outer circumference of a through hole of the reaction chamber 24 and the heater mounting ring 114 which is combined with the heater 80 and the heater loading part 92 while sealing the space between the reaction chamber mounting ring 112 and the heater mounting ring 114. Moreover, the first bellows tube 86 allows the transfer through the heater loading part 92.
  • the rotary tables 18 are rotated to perform the process.
  • the reaction gas may be injected and discharged from the space between the opposed semiconductor substrates 100, and a high temperature environment may be established by means of the heater 80.
  • the heater 80 has a heating surface which encircles the whole area of the semiconductor substrates 100 in order to heat the opposed semiconductor substrates 100 from the backside of the semiconductor substrates 100.
  • the exhaust nozzle 78 including a lifting part 90 will be described with reference to Figs. IA to 1C and Figs. 5A to 5C.
  • the rotary tables 18 are rotatably installed at the boat 22 while the circumferences of the rotary tables 18 are in contact with the supporting rollers 20 as described above. Further, the rotary tables 18 are in the shape of the convex dish in the faced direction so as to come close to the loaded semiconductor substrates 100 inside the contact lines of the supporting rollers 20.
  • the process gas nozzle 76 is located at the upper portion of the reaction chamber 24 and the exhaust nozzle
  • reaction chamber 24 is located at the lower portion of the reaction chamber 24 in order to establish a gas flow from the upper portion of the reaction chamber 24 toward the lower portion of the reaction chamber 24.
  • the process gas nozzle 76 may be fixed to the reaction chamber 24.
  • the process gas injected through the process gas nozzle 76 is exhausted from the process gas nozzle 76.
  • the process gas may be in a uniform contact with the whole area of the semiconductor substrates 100.
  • the exhaust nozzle 78 is separated from the reaction chamber 24 and is separately provided with the boat 22. Accordingly, the exhaust nozzle 78 stands by at the lower portion of the boat 22 in order to escape the interference with the boat 22 prior to the loading/ unloading of the boat 22 into/from the reaction chamber 24.
  • the exhaust nozzle 78 requires an inlet having a large suction opening in order to collect the reaction gas unlike the process gas nozzle 76. That is, the exhaust nozzle 78 is maximally close between the opposed susceptors
  • the moving range of the boat 22 is large, it is undesirable in terms of the systematic reliability if the boat 22 is provided along with the exhaust nozzle 78 and its peripheral device.
  • the lifting part 90 is formed at the exhaust nozzle 78 to make the exhaust nozzle 78 stand by at the lower portion of the opposed susceptors 10 prior to the loading/unloading of the boat 22 into/from the reaction chamber 24 and be loaded between the susceptors 10 after the loading of the boat 22 is completed.
  • the exhaust nozzle 78 is arranged in a form of a semicircle between the susceptors 10 so as to surround the lower portion of the opposed semiconductor substrates 100. Moreover, the exhaust nozzle 78 is installed at the reaction chamber 24 in such a manner that both ends of the exhaust nozzle 78 are separated from the susceptors 10 when the exhaust nozzle 78 is standing by.
  • the standby chamber 120 in which the exhaust nozzle 78 may stand by is formed at the lower portion of the reaction chamber 24.
  • the purge gas is collected by the standby chamber 120 which is separately provided and fixed to the reaction chamber 24 during the process.
  • the lifting part 90 is located at the lower portion of the reaction chamber 24, wherein the exhaust nozzle 78 and a second bellows tube 88 are combined with the lifting part 90.
  • the second bellows tube 88 which is a part of the reaction chamber 24 and provided to arrange an exhaust pipe 79 of the exhaust nozzle 78, is connected to both a reaction chamber mounting ring 124 mounted by surrounding an outer circumference of a through hole of the standby chamber 120 and a bracket mounting ring 130 mounted on a coupling bracket 126 for lifting the exhaust nozzle 78. Further, the bellows tube 88 seals the space between the reaction chamber mounting ring 124 and the bracket mounting ring 130 because the bellows tube 88 surrounds an outer circumference of the exhaust pipe 79.
  • the lifting part 90 includes a supporting frame 132 formed at the outside of the reaction chamber 24, and the rail 134 and a lifting panel 136 for sliding along the rail 134 formed at the supporting frame 132.
  • the coupling bracket 126 is mounted on the lifting panel 136 to thereby be coupled to the exhaust pipe 79 and the bracket mounting ring 130.
  • a lifting motor 138 is formed at the supporting frame 132 and a transferring bolt 140 is formed near the supporting frame 132, wherein the transferring bolt 140 receives the driving force from the lifting motor 138 by means of a pulley 144.
  • a transferring nut 97 may convert the rotational move into the lineal move (going up and down) by interlocking with the transferring bolt 140, wherein the transferring nut 97 may be moved while combined with the lifting panel 136.
  • the exhaust nozzle 78 goes down to maintain the standby status prior to loading of the semiconductor substrates 100 into the reaction chamber 24 or prior to unloading of the semiconductor substrates 100 from the reaction chamber 24 at the time of the completion of the process.
  • the second bellows tube 88 surrounds the outer circumference of the exhaust pipe 79 while maintaining its tensile status.
  • the transferring bolt 140 is rotated by the pulley 144 and the transferring nut 97 combined with the transferring bolt 140 is lifted, and thus the lifting panel 136 is lifted along the rail 134.
  • the exhaust nozzle 78 is also lifted, and thus a suction portion of the exhaust nozzle 78 is inserted between the susceptors 10 so as to encircle the lower portion of the circumference of the semiconductor substrates 100.
  • the second bellows tube 88 attached to the coupling bracket 126 is compressed to maintain the airtightness between the exhaust pipe 79 and the reaction chamber 24.
  • the driving part 26 moves toward the rotary tables 18 to contact therewith and- the heater 80 is inserted into the inner space of the rotary tables 18 through the heater loading part 92 in order to treat the process of the semiconductor substrates 100.
  • the exhaust nozzle 78 is descended in order to withdraw the boat 22, which is progressed in reverse order of the above-mentioned process.
  • the opposed semiconductor substrates 100 are loaded into the reaction chamber 24 which provides the airtight process space. Thereafter, the transferring unit 46 is driven to treat the semiconductor substrates 100, and one of the supporting rollers 20 of the rotary tables 18 comes in contact with the driving shaft 48 for the drive. In the meantime, a heating surface of the heaters 80 may be arranged maximally close to the backside of the
  • the driving shaft 48 in contact with the driving roller 20, the heaters 80 moved toward the backside of the semiconductor substrates 100, and the exhaust nozzle 78 inserted into the space between the susceptors 10 maintain the airtightness with the reaction chamber 24 by means of the bellows tube 88 while they are moving.
  • the driving part 26 is driven to rotate the rotary tables 18, and thus elevate the temperature of the heating surface of the heaters 80.
  • the atmospheric gas nozzle 38 supplies the atmospheric gas (H 2 gas) toward the respective backsides of the semiconductor substrates 100, thereby- maintaining the atmosphere in the reaction chamber 24.
  • the atmospheric gas nozzle 38 forms the gas curtain between the susceptors 10 and the supporting rollers 20 located at the outer circumference of the rotary tables 18, thereby preventing the minute dust from being- penetrated into the inner space of the rotary tables 18. Furthermore, the purge gas nozzle 38 supplies the purge gas (H 2 gas) toward the outer circumference of the rotary tables 18, thereby preventing a silicon layer from being formed at the outer wall of the process gas nozzle 76 by the back-streaming process gas.
  • H 2 gas purge gas
  • the cleaning gas(HF/HCl) is injected toward the semiconductor substrates 100 during the process mentioned above, which protects the surface of the semiconductor substrates 100 from pollution.
  • the heaters 80 may heat the semiconductor substrates 100 as mentioned above, and further, the heating regions on the semiconductor substrates 100 heated by the heaters 80 having shapes of the concentric circles may be divided into a central portion, a circumference portion and a buffer portion thereof. Accordingly, each of the heating regions may have a different temperature distribution. Further, the heat treatment is performed for the upper and the lower portions of the semiconductor substrates 100 by dividing the heating regions into at least two partitions, i.e., the upper and the lower partitions.
  • the process gas may be preheated and then injected on the condition that the outlet of the process gas nozzle 76 is disposed near the buffer portion of the semiconductor substrates 100.
  • the corrosion may occurs on the first bellows tube 86 if the cleaning gas(HF/HCl) which is injected to protect the surface of the semiconductor substrates 100 from pollution contacts the surface of the first bellows tube 86.
  • the anti-corrosive gas supplied from outside through the supply pipe 156 is injected through the plurality of gas outlets 154, the anti-corrosive gas prevents the cleaning gas from flowing toward the first bellows tube 86 while flowing along a direction of the inflow of the cleaning gas, thereby protecting the first bellows tube 86 from corrosion.

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Abstract

A semiconductor manufacturing apparatus includes: a reaction chamber for providing an airtight process space; a boat for loading/unloading semiconductor substrates into/from the reaction chamber, wherein the boat includes susceptors having a shape of a ring and rotary tables to be rotatably supported by a plurality of supporting rollers, each of the semiconductor substrates being mounted onto each of the susceptors and each of the susceptors being mounted onto each of the rotary tables, respectively; a pair of heaters, arranged at backsides Λof the pair of the semiconductor substrates, for performing an epitaxial process in the reaction chamber; a process gas nozzle, installed to encircle an upper fringe of the semiconductor substrates, for supplying a process gas; an exhaust gas nozzle, installed to encircle a lower fringe of the semiconductor substrates, for exhausting the process gas; and an anti-corrosive gas nozzle which is arranged at a circumference of the heaters.

Description

[DESCRIPTION]
[invention Title]
SEMICONDUCTOR MANUFACTURING APPARATUS
[Technical Field] The present invention relates to a semiconductor manufacturing apparatus; and more particularly, to the semiconductor manufacturing apparatus for forming an epitaxial layer on a pair of semiconductor substrates by processing the semiconductor substrates which stand in a vertical direction and face each other.
[Background Art]
In general, an epitaxial layer is formed by growing a monocrystalline layer having the same or different material as or from a monocrystalline wafer on a surface of the monocrystalline wafer. A semiconductor device may have good characteristics if formed on the epitaxial layer of good quality.
A chemical vapor deposition (CVD) is widely used as a method for forming a silicon epitaxial layer, in which a silicon monocrystalline is grown by supplying silicon source gas such as SiCl4, SiHCl3, SiH2Cl2 or SiH4 etc. along with carrier gas such as hydrogen onto a silicon wafer heated at a high temperature. In addition, when the epitaxial layer is formed, a single type process in which one wafer is processed at a batch is preferably adopted by considering points that a high temperature environment which causes the deflection of the silicon wafer may be established and that it is important to control the distribution of the process gas in order to achieve the uniformity of a film. However, since such a single type process is underproductive, it is necessary to develop a semiconductor manufacturing system capable of growing the epitaxial layer on two or more wafers at the same time.
[Disclosure] [Technical Problem]
However, since a high temperature environment of about 1000 °C is required as a process temperature in order to grow the epitaxial layer, it is difficult in designing a semiconductor manufacturing system even though only two wafers are to be processed at the same time. In specific, it is necessary to develop a semiconductor manufacturing system capable of uniformly controlling all process parameters such as a substrate temperature, a gas pressure, a gas composition and a gas flow and so on for each of the wafers which stand in the vertical direction and face each other, wherein each process parameter may have an effect on characteristics of the epitaxial layer. [Technical Solution]
It is, therefore, a primary object of the present invention to provide a semiconductor manufacturing apparatus for forming an epitaxial layer on a pair of semiconductor substrates which stand in a vertical direction and face each other.
[Advantageous Effect] The semiconductor manufacturing apparatus in accordance with the present invention can improve the productivity significantly in that an epitaxial layer of good quality can be grown on each of the wafers at the same time .
[Description of Drawings]
The above and other objects and features of the present invention will become apparent from the following description of preferred embodiments given in conjunction with the accompanying drawings, in which:
Fig. IA provides an explanatory view showing an external appearance of a semiconductor manufacturing apparatus in accordance with the present invention;
Fig. IB depicts a conceptual view illustrating an arrangement of a process gas nozzle and an exhaust gas nozzle of the semiconductor manufacturing apparatus in accordance with the present invention;
Fig. 2A represents a deal drawing illustrating a rotary table in accordance with the present invention; Figs. 2B and 2C present enlarged views illustrating rotary tables and a driving part connected to the rotary tables, respectively;
Fig. 3A provides a cross-sectional view showing the semiconductor manufacturing apparatus which includes the rotary tables;
Fig. 3B furnishes an enlarged cross-sectional view illustrating an upper portion of Fig. 3A;
Fig. 3C illustrates a diagram showing a detailed view of a portion "A" in Fig. 3A; Fig. 3D depicts a cross-sectional view showing configuration of an anti-corrosive gas nozzle
Fig. 4 offers a conceptual view illustrating the semiconductor substrate and a nozzle arranged in a divided heating area; Fig. 5A represents a diagram illustrating a profile of Fig. IB;
Fig. 5B depicts an enlarged cross-sectional view of a lifting part of Fig. 5A; and
Fig. 5C shows a cross-sectional view corresponding to Fig. 5A. [Best Mode]
In accordance with one aspect of the present invention, there is provided a semiconductor manufacturing apparatus including: a reaction chamber for providing an airtight process space; a boat for loading/unloading a pair of -semiconductor substrates which are facing each other into/from the reaction chamber, wherein the boat includes a pair of susceptors having a shape of a ring and a pair of rotary tables to be rotatably supported by a plurality of supporting rollers, each of the semiconductor substrates being mounted onto each of the susceptors and each of the susceptors being mounted onto each of the rotary tables, respectively; a pair of heaters, arranged at backsides of the pair of the semiconductor substrates, for performing an epitaxial process in the reaction chamber; a process gas nozzle, installed to encircle an upper fringe of the semiconductor substrates, for supplying a process gas; an exhaust gas nozzle, installed to encircle a lower fringe of the semiconductor substrates, for exhausting the process gas; and an anti-corrosive gas nozzle which is arranged at a circumference of the heaters.
[Mode for Invention] In the following detailed description, reference is made to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It is to be understood that the various embodiments of the invention, although different, are not necessarily mutually exclusive. For example, a particular feature, structure, or characteristic described herein in connection with one embodiment may be implemented within other embodiments without departing from the spirit and scope of the invention. In addition, it is to be understood that the location or arrangement of individual elements within each disclosed embodiment may be modified without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, appropriately interpreted, along with the full range of equivalents to which the claims are entitled. In the drawings, like numerals refer to the same or similar functionality throughout the several views.
Fig. IA provides an explanatory view showing an external appearance of a semiconductor manufacturing apparatus in accordance with the present invention; and Fig. IB depicts a conceptual view illustrating an arrangement of a process gas nozzle and an exhaust gas nozzle of the semiconductor manufacturing apparatus in accordance with the present invention;
Fig. 2A represents a deal drawing illustrating a rotary table in accordance with the present invention; and Figs. 2B and 2C present enlarged views illustrating rotary tables and a- driving part connected to the rotary tables, respectively;
Fig. 3A provides a cross-sectional view showing the semiconductor manufacturing apparatus which includes the rotary tables; Fig. 3B furnishes an enlarged cross- sectional view illustrating an upper portion of Fig. 3A; Fig. 3C illustrates a diagram showing a detailed view of a portion "A" in Fig. 3A; and Fig. 3D depicts a cross- sectional view showing configuration of an anti-corrosive gas nozzle
Fig. 4 offers a conceptual view illustrating the semiconductor substrate and a nozzle arranged in a divided heating area; Fig. 5A represents a diagram illustrating a profile of Fig. IB; Fig. 5B depicts an enlarged cross-sectional view of a lifting part of Fig. 5A; and Fig. 5C shows a cross-sectional view corresponding to Fig. 5A.
The present invention will now be described in more detail, with reference to the accompanying drawings. Fig. IA provides an explanatory view showing an external appearance of a semiconductor manufacturing apparatus in accordance with the present invention; and Fig, IB depicts a conceptual view illustrating an arrangement of a process gas nozzle and an exhaust gas nozzle of the semiconductor manufacturing apparatus in accordance with the present invention.
As shown in Figs. IA and IB, the semiconductor manufacturing apparatus in accordance with the present invention includes a reaction chamber 24 for providing an airtight process space. The reaction chamber 24 has room capable of a boat 22 on which a pair of opposed semiconductor substrates 100 and a pair of rotary tables 18 for supporting the semiconductor substrates 100 may be installed.
A process gas nozzle 76 is formed at an upper portion of the reaction chamber 24 and an exhaust nozzle 78 is formed at a lower portion of the reaction chamber 24 in order to establish a gas flow from the upper portion toward the lower portion of the reaction chamber 24.
A heater 80 for establishing a high temperature environment in the reaction chamber 24 and a driving part 26 connected to a plurality of supporting rollers 20 of the rotary tables 18 are arranged at both sides of the reaction chamber 24. In addition, the boat 22 includes a boat cap 82 for providing an airtight space to the reaction chamber 24 by blocking a backside of the rotary tables 18 introduced into the reaction chamber 24, wherein the boat cap 82 is mounted on a moving rail 84.
The semiconductor substrates 100 are mounted on a pair of susceptors 10 of the boat 22 by means of an end effector (not shown) and the susceptors 10 are mounted on the rotary tables 18 by means of the end effector. The rotary table 18 is divided into the susceptor 10 and a supporting panel 14. The susceptor 10 is attached to the rotary table 18 through rear attaching means 16. Also, the susceptor 10 holds the semiconductor substrate 100 through front attaching means 12 and the supporting panel 14.
Referring to Figs. 2A to 3B, the rotary table 18 on which the semiconductor substrate 100 is loaded is described as follows:
The susceptor 10 is open to a front side of the semiconductor substrate (s) 100 (i.e., a process reaction side) in such a manner that a circumference of the front side of the semiconductor substrate 100 interferes with the susceptor 10 slightly. Moreover, the supporting panel 14 with a shape of a ring is attached to the susceptor 10 by means of the front attaching means 12 in such a manner that a circumference of a backside of the semiconductor substrate 100 interferes with the supporting panel 14 slightly. Accordingly, the semiconductor substrate 100 is not pressurized by the front attaching means 12. Next, the rotary table 18 has a shape of a convex dish in order to closely make the loaded semiconductor substrates 100 face each other, wherein a protrusion of a driving circumference portion 28 is formed at the circumference of the rotary table 18 and in contact with the supporting roller 20.
In order to prevent minute dust in the supporting roller 20 from being penetrated into the semiconductor substrates 100, an antifouling ring 30 is preferably protruded on the circumference of the rotary table 18 between the driving circumference portion 28 and the semiconductor substrate 100 so as to surround the semiconductor substrate 100.
That is, the antifouling ring 30 serves as a protrusion structure capable of physically coping with the penetration of the minute dust.
Furthermore, an atmospheric gas nozzle 38 for supplying an atmospheric gas to space between the rotary tables 18 facing each other is formed at the reaction chamber 24 in order to maintain an atmosphere in the reaction chamber 24 and prevent the penetration of the minute dust. Herein, it is desirable to form a gas curtain through the atmospheric gas provided by the atmospheric gas nozzle 38, wherein the kind of the provided atmospheric gas may be H2. What is more, a purge gas nozzle 38 for supplying purge gas to space between the rotary tables 18 facing each other is formed at the reaction • chamber 24 in order to prevent an unnecessary deposition on an outer wall of the process gas nozzle 76 which may be caused by a back- streaming process gas. Herein, the kind of the provided purge gas may be H2.
The purge gas injected into the reaction chamber 24 is discharged through a purge exhaust pipe 122 formed at a standby chamber 120. In the mean time, in case the semiconductor substrates 100 are loaded on the rotary tables 18, the semiconductor substrates 100 stand in a vertical direction and face each other. Also, the rotary tables 18 can be rotated by the supporting rollers 20. As shown in Fig. 2B, any one of the supporting rollers 20 of the rotary tables 18 includes a connecting means 52 having a spline groove used for connecting to a driving shaft 48 of the driving part 26.
After the boat 22 is loaded into the reaction chamber 24 by means of the connecting means 52, the driving part 26 is transferred, resulting in the contact as shown in Fig. 2C.
Then, the driving part 26 includes a supporting frame 94 formed at the outside of the reaction chamber 24, and a rail 142 and a transferring panel 44 for sliding along the rail 142 are formed at the supporting frame 94.
Moreover, a transferring unit 46 for making the transferring panel 44 go and return is formed at the supporting frame 94, and a driving motor 50 having the driving shaft 48 for rotating the supporting rollers 20 is formed at the transferring panel 44. Also, any one of the supporting rollers 20 of the rotary tables 18 includes the connecting means 52 which comes in contact with the driving shaft 48 as described above. At this time, the reaction chamber 24 is sealed by the driving part 26 which is in contact therewith. Since the purge gas such as the explosive H2 is introduced into the reaction chamber 24, it is necessary to prevent the purge gas from being flowing out of the reaction chamber 24. Also, in order to provide a low pressure (a vacuum) environment for carrying out the process and prevent the outflow of a waste gas (a poison gas) during the process, it is necessary to seal the reaction chamber 24.
Moreover, an anti-corrosive gas nozzle 150 which discharges anti-corrosive gas is arranged at a circumference of the heaters 80 (Refer to Figs. 3C and 3D) . The anti-corrosive gas nozzle 150 is necessary to protect a first bellows tube 86 from a corrosion which results from a contact between the first bellows tube 86 and cleaning gas(HF/HCl) that is provided for cleaning a surface of the semiconductor substrates 100 during the epitaxial process. Corrosion on the first bellows tube 80 frees the airtightness between the reaction chamber mounting ring 124 and the heater mounting ring 114, thereby having a bad effect on the characteristics of the epitaxial layer.
The anti-corrosive gas nozzle 150 includes a ring- shaped connecting body 152 and a gas outlet 154. Referring Fig. 3D, the connecting body 152 is installed inside the first bellows tube 86, i.e., around an outer circumference of the heater cover 81 included in the heater 80. Moreover, a plurality of gas outlets 154 are installed on the connecting body 152 at regular intervals.
Furthermore, a supply pipe 156 which supplies the anti-corrosive gas from outside is connected to the connecting body 152. The supply pipe 156 may supply the anti-corrosive gas in order to protect the first bellows tube 86 from the corrosion, wherein the anti-corrosive gas may include H2.
The anti-corrosive gas which is supplied through the supply pipe 156 discharges through the connecting body 152 and the plurality of the gas outlets 154, and therefore, prevents an inflow of the cleaning gas(HF/HCl) which can cause corrosion on the first bellows tube 86.
Next, Each element of the heaters 80 including a heater loading part 92 will now be described in more detail with reference to Fig. IA, Fig. IB and Fig 4. As shown in the drawings, the driving part' 26 is omitted in order not to superimpose the driving part 26 on the heater loading part 92. For explanatory convenience, since each of the heaters 80 have a symmetrical structure, only one half of the heaters 80 is shown in the drawings for convenience' sake .
First, the rotary tables 18 are rotatably mounted on the boat 22 while the circumferences of the rotary tables 18 are in contact with the supporting rollers 20. Also, each of the rotary tables 18 has a shape of the convex dish which is convex in a direction toward the semiconductor substrate 100 in order to closely face the loaded semiconductor substrates 100 each other inside the contact lines of the supporting rollers 20 and the rotary tables 18.
When the semiconductor substrates 100 are loaded on the rotary tables 18, the semiconductor substrates 100 may stand in the vertical direction and face each other, and further, the rotary tables 18 may be rotated by the operation of the supporting rollers 20 as mentioned above.
In the meantime, the heater 80 stands by at the outside of the rotary tables 18, and after the loading of the semiconductor substrates 100 is completed, the heater 80 is inserted into a concave groove of the rotary tables 18 by means of the heater loading part 92 to thereby approach the backside of the semiconductor substrates 100.
In order to allow the moving of the heater 80 through the heater loading part 92 and ensure the airtightness of the reaction chamber 24, the heater 80 can be separated from the reaction chamber 24, and the first bellows tube 86 can intermediate between the heater 80 and the reaction chamber 24.
In the concrete, the first bellows tube 86 is connected to the reaction chamber mounting ring 112 mounted by surrounding an outer circumference of a through hole of the reaction chamber 24 and the heater mounting ring 114 which is combined with the heater 80 and the heater loading part 92 while sealing the space between the reaction chamber mounting ring 112 and the heater mounting ring 114. Moreover, the first bellows tube 86 allows the transfer through the heater loading part 92.
After the heater 80 is mounted on the reaction chamber 24, the rotary tables 18 are rotated to perform the process. During the process, the reaction gas may be injected and discharged from the space between the opposed semiconductor substrates 100, and a high temperature environment may be established by means of the heater 80.
At this time, in order to grow a film on a reaction surface of the semiconductor substrates 100, it is necessary to provide an appropriate high temperature environment on the semiconductor substrates 100. To this end, the heater 80 has a heating surface which encircles the whole area of the semiconductor substrates 100 in order to heat the opposed semiconductor substrates 100 from the backside of the semiconductor substrates 100.
The exhaust nozzle 78 including a lifting part 90 will be described with reference to Figs. IA to 1C and Figs. 5A to 5C. The rotary tables 18 are rotatably installed at the boat 22 while the circumferences of the rotary tables 18 are in contact with the supporting rollers 20 as described above. Further, the rotary tables 18 are in the shape of the convex dish in the faced direction so as to come close to the loaded semiconductor substrates 100 inside the contact lines of the supporting rollers 20.
The process gas nozzle 76 is located at the upper portion of the reaction chamber 24 and the exhaust nozzle
78 is located at the lower portion of the reaction chamber 24 in order to establish a gas flow from the upper portion of the reaction chamber 24 toward the lower portion of the reaction chamber 24.
At this time, since the process gas nozzle 76 is thin enough to evade the interference with the susceptors 10 during the loading/unloading of the boat 22, the process gas nozzle 76 may be fixed to the reaction chamber 24.
The process gas injected through the process gas nozzle 76 is exhausted from the process gas nozzle 76. The process gas may be in a uniform contact with the whole area of the semiconductor substrates 100.
In the meantime, the exhaust nozzle 78 is separated from the reaction chamber 24 and is separately provided with the boat 22. Accordingly, the exhaust nozzle 78 stands by at the lower portion of the boat 22 in order to escape the interference with the boat 22 prior to the loading/ unloading of the boat 22 into/from the reaction chamber 24.
The exhaust nozzle 78 requires an inlet having a large suction opening in order to collect the reaction gas unlike the process gas nozzle 76. That is, the exhaust nozzle 78 is maximally close between the opposed susceptors
10 in order to collect the injected reaction gas.
Herein, since the moving range of the boat 22 is large, it is undesirable in terms of the systematic reliability if the boat 22 is provided along with the exhaust nozzle 78 and its peripheral device.
At this time, in case the exhaust nozzle 78 is fixed to the reaction chamber 24, it can be rubbed with the susceptors 10 (between the susceptors 10) on the moving path of the boat 22, and thus, the minute dust is generated in the reaction chamber 24, thereby contaminating the process space. •
Accordingly, the lifting part 90 is formed at the exhaust nozzle 78 to make the exhaust nozzle 78 stand by at the lower portion of the opposed susceptors 10 prior to the loading/unloading of the boat 22 into/from the reaction chamber 24 and be loaded between the susceptors 10 after the loading of the boat 22 is completed.
In the concrete, the exhaust nozzle 78 is arranged in a form of a semicircle between the susceptors 10 so as to surround the lower portion of the opposed semiconductor substrates 100. Moreover, the exhaust nozzle 78 is installed at the reaction chamber 24 in such a manner that both ends of the exhaust nozzle 78 are separated from the susceptors 10 when the exhaust nozzle 78 is standing by.
In addition, the standby chamber 120 in which the exhaust nozzle 78 may stand by is formed at the lower portion of the reaction chamber 24.
In case the considerable portion of the exhaust nozzle 78 is located in the standby chamber 120, the purge gas is collected by the standby chamber 120 which is separately provided and fixed to the reaction chamber 24 during the process.
In the meantime, the lifting part 90 is located at the lower portion of the reaction chamber 24, wherein the exhaust nozzle 78 and a second bellows tube 88 are combined with the lifting part 90.
To be specific, the second bellows tube 88, which is a part of the reaction chamber 24 and provided to arrange an exhaust pipe 79 of the exhaust nozzle 78, is connected to both a reaction chamber mounting ring 124 mounted by surrounding an outer circumference of a through hole of the standby chamber 120 and a bracket mounting ring 130 mounted on a coupling bracket 126 for lifting the exhaust nozzle 78. Further, the bellows tube 88 seals the space between the reaction chamber mounting ring 124 and the bracket mounting ring 130 because the bellows tube 88 surrounds an outer circumference of the exhaust pipe 79.
Next, the lifting part 90 includes a supporting frame 132 formed at the outside of the reaction chamber 24, and the rail 134 and a lifting panel 136 for sliding along the rail 134 formed at the supporting frame 132.
Moreover, the coupling bracket 126 is mounted on the lifting panel 136 to thereby be coupled to the exhaust pipe 79 and the bracket mounting ring 130. In the meantime, a lifting motor 138 is formed at the supporting frame 132 and a transferring bolt 140 is formed near the supporting frame 132, wherein the transferring bolt 140 receives the driving force from the lifting motor 138 by means of a pulley 144.
A transferring nut 97 may convert the rotational move into the lineal move (going up and down) by interlocking with the transferring bolt 140, wherein the transferring nut 97 may be moved while combined with the lifting panel 136.
Accordingly, the exhaust nozzle 78 goes down to maintain the standby status prior to loading of the semiconductor substrates 100 into the reaction chamber 24 or prior to unloading of the semiconductor substrates 100 from the reaction chamber 24 at the time of the completion of the process.
At this time, the second bellows tube 88 surrounds the outer circumference of the exhaust pipe 79 while maintaining its tensile status. Subsequently, after loading the semiconductor substrates 100 into the reaction chamber 24, by driving the lifting motor 138, the transferring bolt 140 is rotated by the pulley 144 and the transferring nut 97 combined with the transferring bolt 140 is lifted, and thus the lifting panel 136 is lifted along the rail 134. Further, since both the coupling bracket 126 and the bracket mounting ring 130 coupled to the lifting panel 136 are lifted, the exhaust nozzle 78 is also lifted, and thus a suction portion of the exhaust nozzle 78 is inserted between the susceptors 10 so as to encircle the lower portion of the circumference of the semiconductor substrates 100.
At this time, the second bellows tube 88 attached to the coupling bracket 126 is compressed to maintain the airtightness between the exhaust pipe 79 and the reaction chamber 24.
Then, the driving part 26 moves toward the rotary tables 18 to contact therewith and- the heater 80 is inserted into the inner space of the rotary tables 18 through the heater loading part 92 in order to treat the process of the semiconductor substrates 100. After the process treatment is completed, the exhaust nozzle 78 is descended in order to withdraw the boat 22, which is progressed in reverse order of the above-mentioned process. A semiconductor manufacturing process in accordance with the present invention will be described in detail as follows :
The opposed semiconductor substrates 100 are loaded into the reaction chamber 24 which provides the airtight process space. Thereafter, the transferring unit 46 is driven to treat the semiconductor substrates 100, and one of the supporting rollers 20 of the rotary tables 18 comes in contact with the driving shaft 48 for the drive. In the meantime, a heating surface of the heaters 80 may be arranged maximally close to the backside of the
• semiconductor substrates 100 by moving the heaters 80 toward the backside of the semiconductor substrates 100 through the heater loading part 92. In addition, the exhaust nozzle 78 which encircles the lower half portion of the semiconductor substrate 100 is inserted into the space between the opposed susceptors 10 by the lifting part 90.
Herein, the driving shaft 48 in contact with the driving roller 20, the heaters 80 moved toward the backside of the semiconductor substrates 100, and the exhaust nozzle 78 inserted into the space between the susceptors 10 maintain the airtightness with the reaction chamber 24 by means of the bellows tube 88 while they are moving. After the heaters 80 are arranged at the backside of the semiconductor substrates 100 by the heater loading part 92, the driving part 26 is driven to rotate the rotary tables 18, and thus elevate the temperature of the heating surface of the heaters 80. At this time, the atmospheric gas nozzle 38 supplies the atmospheric gas (H2 gas) toward the respective backsides of the semiconductor substrates 100, thereby- maintaining the atmosphere in the reaction chamber 24. Moreover, the atmospheric gas nozzle 38 forms the gas curtain between the susceptors 10 and the supporting rollers 20 located at the outer circumference of the rotary tables 18, thereby preventing the minute dust from being- penetrated into the inner space of the rotary tables 18. Furthermore, the purge gas nozzle 38 supplies the purge gas (H2 gas) toward the outer circumference of the rotary tables 18, thereby preventing a silicon layer from being formed at the outer wall of the process gas nozzle 76 by the back-streaming process gas.
Moreover, the cleaning gas(HF/HCl) is injected toward the semiconductor substrates 100 during the process mentioned above, which protects the surface of the semiconductor substrates 100 from pollution.
The heaters 80 may heat the semiconductor substrates 100 as mentioned above, and further, the heating regions on the semiconductor substrates 100 heated by the heaters 80 having shapes of the concentric circles may be divided into a central portion, a circumference portion and a buffer portion thereof. Accordingly, each of the heating regions may have a different temperature distribution. Further, the heat treatment is performed for the upper and the lower portions of the semiconductor substrates 100 by dividing the heating regions into at least two partitions, i.e., the upper and the lower partitions.
At this time, the process gas may be preheated and then injected on the condition that the outlet of the process gas nozzle 76 is disposed near the buffer portion of the semiconductor substrates 100.
In the meantime, the corrosion may occurs on the first bellows tube 86 if the cleaning gas(HF/HCl) which is injected to protect the surface of the semiconductor substrates 100 from pollution contacts the surface of the first bellows tube 86. Thus, if the anti-corrosive gas supplied from outside through the supply pipe 156 is injected through the plurality of gas outlets 154, the anti-corrosive gas prevents the cleaning gas from flowing toward the first bellows tube 86 while flowing along a direction of the inflow of the cleaning gas, thereby protecting the first bellows tube 86 from corrosion.
While the invention has been shown and described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and the scope of the invention as defined in the following claims .

Claims

[CLAIMS]
[Claim l]
A semiconductor manufacturing apparatus comprising: a reaction chamber for providing an airtight process space; a boat for loading/unloading a pair of semiconductor substrates which are facing each other into/from the reaction chamber, wherein the boat includes a pair of susceptors having a shape of a ring and a pair of rotary tables to be rotatably supported by a plurality of supporting rollers, each of the semiconductor substrates being mounted onto each of the susceptors and each of the susceptors being mounted onto each of the rotary tables, respectively; a pair of heaters, arranged at backsides of the pair of the semiconductor substrates, for performing an epitaxial process in the reaction chamber; a process gas nozzle, installed to encircle an upper fringe of the semiconductor substrates, for supplying a process gas; an exhaust gas nozzle, installed to encircle a lower fringe of the semiconductor substrates, for exhausting the process gas; and an anti-corrosive gas nozzle which is arranged at a circumference of the heaters.
[Claim 2]
The apparatus of claim 1, further comprising: a driving part for rotating the pair of the rotary tables by contacting any one of the plurality of the supporting rollers after the boat is loaded into the reaction chamber.
[Claim 3]
The apparatus of claim 1, further comprising: a heater loading part for moving the pair of the heaters near to the backsides of the semiconductor substrates by inserting the heaters into an inner space of the rotary tables after the boat is loaded into the reaction chamber.
[Claim 4]
The apparatus of claim 1, further comprising: a nozzle lifting part for locating the exhaust gas nozzle at a lower portion of the reaction chamber to avoid an interference between the exhaust gas nozzle and the pair of the susceptors before the boat is loaded into the reaction chamber, and for inserting the exhaust gas nozzle into the pair of the susceptors to encircle the lower fringe of the semiconductor substrates after the boat is loaded into the reaction chamber.
[Claim 5]
The apparatus of claim 1, further comprising: a purge gas nozzle for supplying a purge gas capable of preventing an outer wall of the process gas nozzle from being deposited.
[Claim 6]
The apparatus of claim 1, further comprising: an atmospheric gas nozzle for supplying an atmospheric gas capable of maintaining an atmosphere in the reaction chamber and preventing the backsides of the semiconductor substrates from being deposited.
[Claim 7] The apparatus of claim 1, wherein the anti-corrosive gas nozzle includes a connecting section surrounding the heaters; and a plurality of gas outlets which are arranged on the connecting section at regular intervals.
PCT/KR2007/004458 2007-08-24 2007-09-14 Semiconductor manufacturing apparatus WO2009028753A1 (en)

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