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WO2009028453A1 - Thin film transistor - Google Patents

Thin film transistor Download PDF

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Publication number
WO2009028453A1
WO2009028453A1 PCT/JP2008/065099 JP2008065099W WO2009028453A1 WO 2009028453 A1 WO2009028453 A1 WO 2009028453A1 JP 2008065099 W JP2008065099 W JP 2008065099W WO 2009028453 A1 WO2009028453 A1 WO 2009028453A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
layer composed
active layer
tft
Prior art date
Application number
PCT/JP2008/065099
Other languages
French (fr)
Japanese (ja)
Inventor
Katsura Hirai
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to JP2009530106A priority Critical patent/JPWO2009028453A1/en
Publication of WO2009028453A1 publication Critical patent/WO2009028453A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Provided is a thin film transistor having a high on/off ratio with a stabilized thin film transistor (TFT) element, namely, improved mobility and low off-current, and improved production efficiency. The thin film transistor is provided with a first active layer composed of a metal oxide semiconductor, and a second active layer composed of an organic semiconductor. The thin film transistor is configured by laminating the first and the second active layers.
PCT/JP2008/065099 2007-08-31 2008-08-25 Thin film transistor WO2009028453A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009530106A JPWO2009028453A1 (en) 2007-08-31 2008-08-25 Thin film transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007225516 2007-08-31
JP2007-225516 2007-08-31

Publications (1)

Publication Number Publication Date
WO2009028453A1 true WO2009028453A1 (en) 2009-03-05

Family

ID=40387173

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065099 WO2009028453A1 (en) 2007-08-31 2008-08-25 Thin film transistor

Country Status (2)

Country Link
JP (1) JPWO2009028453A1 (en)
WO (1) WO2009028453A1 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102290440A (en) * 2010-06-21 2011-12-21 财团法人工业技术研究院 Transistor and manufacturing method thereof
CN103268918A (en) * 2012-06-29 2013-08-28 上海天马微电子有限公司 Bipolar thin film transistor and manufacturing method thereof
JP2014517524A (en) * 2011-06-01 2014-07-17 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング Hybrid bipolar TFT
JP2014154734A (en) * 2013-02-08 2014-08-25 Kochi Univ Of Technology Ozone assisted high quality homogeneous metal oxide thin film fabrication technology, and oxide thin film transistor by thin film fabrication technology, and manufacturing method therefor
US8928046B2 (en) 2010-04-16 2015-01-06 Industrial Technology Research Institute Transistor and method of fabricating the same
KR101509115B1 (en) 2011-03-09 2015-04-07 삼성디스플레이 주식회사 Oxide for semiconductor layer for thin film transistor, semiconductor layer for thin film transistor which comprises said oxide, and thin film transistor
US9142682B2 (en) 2012-09-05 2015-09-22 Samsung Display Co., Ltd. Thin film transistor and manufacturing method thereof
WO2017110953A1 (en) * 2015-12-24 2017-06-29 株式会社Flosfia Film forming method
JP2017157856A (en) * 2011-07-08 2017-09-07 株式会社半導体エネルギー研究所 Semiconductor device
JP2018136552A (en) * 2012-08-28 2018-08-30 株式会社半導体エネルギー研究所 Display
JP2018139316A (en) * 2012-11-28 2018-09-06 株式会社半導体エネルギー研究所 Semiconductor device
JP2019087766A (en) * 2009-03-06 2019-06-06 株式会社半導体エネルギー研究所 Semiconductor device
JP2020102636A (en) * 2009-07-17 2020-07-02 株式会社半導体エネルギー研究所 Display device
WO2020162130A1 (en) * 2019-02-04 2020-08-13 富士フイルム株式会社 Method for forming organic semiconductor film

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08228034A (en) * 1994-12-09 1996-09-03 At & T Corp Organic thin film transistor device
JPH09199732A (en) * 1996-01-16 1997-07-31 Lucent Technol Inc Product comprising transistors
JP2002319682A (en) * 2002-01-04 2002-10-31 Japan Science & Technology Corp Transistor and semiconductor device
WO2003016599A1 (en) * 2001-08-09 2003-02-27 Asahi Kasei Kabushiki Kaisha Organic semiconductor element
JP2004006686A (en) * 2002-03-26 2004-01-08 Sanyo Electric Co Ltd Method of forming zinc oxide semiconductor layer, method of manufacturing semiconductor device, and semiconductor device
JP2004256532A (en) * 2003-02-05 2004-09-16 Asahi Kasei Corp Polyacene compound and method for synthesizing the same
JP2004327857A (en) * 2003-04-25 2004-11-18 Pioneer Electronic Corp Method for manufacturing organic transistor and organic transistor
JP2005032774A (en) * 2003-07-07 2005-02-03 Seiko Epson Corp Organic thin film transistor and its manufacturing method
JP2005158765A (en) * 2003-11-20 2005-06-16 Canon Inc Field effect organic transistor and manufacturing method thereof
JP2006080172A (en) * 2004-09-08 2006-03-23 Casio Comput Co Ltd Patterning method of zinc oxide film
JP2006269469A (en) * 2005-03-22 2006-10-05 Casio Comput Co Ltd Thin-film transistor and manufacturing method thereof
WO2008099863A1 (en) * 2007-02-16 2008-08-21 Idemitsu Kosan Co., Ltd. Semiconductor, semiconductor device, and complementary transistor circuit device

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08228034A (en) * 1994-12-09 1996-09-03 At & T Corp Organic thin film transistor device
JPH09199732A (en) * 1996-01-16 1997-07-31 Lucent Technol Inc Product comprising transistors
WO2003016599A1 (en) * 2001-08-09 2003-02-27 Asahi Kasei Kabushiki Kaisha Organic semiconductor element
JP2002319682A (en) * 2002-01-04 2002-10-31 Japan Science & Technology Corp Transistor and semiconductor device
JP2004006686A (en) * 2002-03-26 2004-01-08 Sanyo Electric Co Ltd Method of forming zinc oxide semiconductor layer, method of manufacturing semiconductor device, and semiconductor device
JP2004256532A (en) * 2003-02-05 2004-09-16 Asahi Kasei Corp Polyacene compound and method for synthesizing the same
JP2004327857A (en) * 2003-04-25 2004-11-18 Pioneer Electronic Corp Method for manufacturing organic transistor and organic transistor
JP2005032774A (en) * 2003-07-07 2005-02-03 Seiko Epson Corp Organic thin film transistor and its manufacturing method
JP2005158765A (en) * 2003-11-20 2005-06-16 Canon Inc Field effect organic transistor and manufacturing method thereof
JP2006080172A (en) * 2004-09-08 2006-03-23 Casio Comput Co Ltd Patterning method of zinc oxide film
JP2006269469A (en) * 2005-03-22 2006-10-05 Casio Comput Co Ltd Thin-film transistor and manufacturing method thereof
WO2008099863A1 (en) * 2007-02-16 2008-08-21 Idemitsu Kosan Co., Ltd. Semiconductor, semiconductor device, and complementary transistor circuit device

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019087766A (en) * 2009-03-06 2019-06-06 株式会社半導体エネルギー研究所 Semiconductor device
US11715801B2 (en) 2009-03-06 2023-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11309430B2 (en) 2009-03-06 2022-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10700213B2 (en) 2009-03-06 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2020102636A (en) * 2009-07-17 2020-07-02 株式会社半導体エネルギー研究所 Display device
US8928046B2 (en) 2010-04-16 2015-01-06 Industrial Technology Research Institute Transistor and method of fabricating the same
CN102290440A (en) * 2010-06-21 2011-12-21 财团法人工业技术研究院 Transistor and manufacturing method thereof
KR101509115B1 (en) 2011-03-09 2015-04-07 삼성디스플레이 주식회사 Oxide for semiconductor layer for thin film transistor, semiconductor layer for thin film transistor which comprises said oxide, and thin film transistor
JP2014517524A (en) * 2011-06-01 2014-07-17 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング Hybrid bipolar TFT
US11011652B2 (en) 2011-07-08 2021-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11588058B2 (en) 2011-07-08 2023-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10043918B2 (en) 2011-07-08 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10658522B2 (en) 2011-07-08 2020-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2017157856A (en) * 2011-07-08 2017-09-07 株式会社半導体エネルギー研究所 Semiconductor device
US12132121B2 (en) 2011-07-08 2024-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103268918A (en) * 2012-06-29 2013-08-28 上海天马微电子有限公司 Bipolar thin film transistor and manufacturing method thereof
US10317736B2 (en) 2012-08-28 2019-06-11 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP2018136552A (en) * 2012-08-28 2018-08-30 株式会社半導体エネルギー研究所 Display
US9142682B2 (en) 2012-09-05 2015-09-22 Samsung Display Co., Ltd. Thin film transistor and manufacturing method thereof
JP2018139316A (en) * 2012-11-28 2018-09-06 株式会社半導体エネルギー研究所 Semiconductor device
JP2014154734A (en) * 2013-02-08 2014-08-25 Kochi Univ Of Technology Ozone assisted high quality homogeneous metal oxide thin film fabrication technology, and oxide thin film transistor by thin film fabrication technology, and manufacturing method therefor
WO2017110953A1 (en) * 2015-12-24 2017-06-29 株式会社Flosfia Film forming method
JP7223041B2 (en) 2019-02-04 2023-02-15 富士フイルム株式会社 Method for forming organic semiconductor film
JPWO2020162130A1 (en) * 2019-02-04 2021-12-23 富士フイルム株式会社 Method of forming an organic semiconductor film
WO2020162130A1 (en) * 2019-02-04 2020-08-13 富士フイルム株式会社 Method for forming organic semiconductor film

Also Published As

Publication number Publication date
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