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WO2009003150A2 - Photovoltaïques à collecte latérale - Google Patents

Photovoltaïques à collecte latérale Download PDF

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Publication number
WO2009003150A2
WO2009003150A2 PCT/US2008/068446 US2008068446W WO2009003150A2 WO 2009003150 A2 WO2009003150 A2 WO 2009003150A2 US 2008068446 W US2008068446 W US 2008068446W WO 2009003150 A2 WO2009003150 A2 WO 2009003150A2
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
elements
collection
collector
trenches
Prior art date
Application number
PCT/US2008/068446
Other languages
English (en)
Other versions
WO2009003150A3 (fr
Inventor
Stephen Fonash
Wook Jun Nam
Original Assignee
Solarity, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2008/050780 external-priority patent/WO2008086482A2/fr
Priority claimed from US11/972,491 external-priority patent/US8294025B2/en
Application filed by Solarity, Inc. filed Critical Solarity, Inc.
Priority to US12/666,768 priority Critical patent/US20110023955A1/en
Priority to EP08781048A priority patent/EP2171763A2/fr
Publication of WO2009003150A2 publication Critical patent/WO2009003150A2/fr
Publication of WO2009003150A3 publication Critical patent/WO2009003150A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates generally to electronic and opto-electronic devices and a production method for the production of electronic and opto-electronic devices from an interpenetrating network configuration of nano structured high surface to volume ratio porous thin films with organic/inorganic metal, semiconductor or insulator material positioned within the interconnected void volume of the nano structure.
  • the present application relates more specifically to lateral collection photovoltaic (LCP) structures.
  • the absorption and the collection lengths in the horizontal structure of Figure 1 are essentially parallel means they are not independent.
  • the appropriate collection length or lengths of the top active layer must be at least long enough to allow carriers generated by absorption in the top active layer to be collected and the appropriate collection length or lengths of the bottom active layer should be at least long enough to allow carriers generated by absorption in the bottom active layer to be collected and should be at least as long as the absorption length in that material for effective operation.
  • one electrode is a composite wherein a conductor is separated by an insulator, which is part of each collector element, from the opposing electrode and this opposing electrode is a conductor covering a surface.
  • the collection structure is a composite containing both the anode and cathode collecting elements for lateral collection. The opposing electrode may or may not be in contact with a conductor covering a surface.
  • a further embodiment is directed to a photovoltaic device having a first conductive layer, a collection structure in physical and electrical contact with the first conductive layer, an active layer disposed adjacent to the first conductive layer and in contact with all surfaces of the collection structure, and a second conductive layer disposed opposite the first conductive layer and in contact with the active layer.
  • the active layer has an absorption length and a collection length.
  • the collection structure includes a plurality of collector elements positioned substantially perpendicular to the conductive layer. The plurality of collector elements extending from the first conductive layer by a distance corresponding to the absorption length of the active layer and the plurality of collector elements being spaced apart by a distance corresponding to two times the collection length of the active layer.
  • Figure 5 illustrates a collecting structure with fin-like elements.
  • Figure 7 illustrates growth of the absorbing active layer using a catalyst layer positioned among the collector elements.
  • Figure 8 illustrates a patterned catalyst on the substrate.
  • Figure 15 illustrates a cross-section of a photovoltaic device with the composite electrode structure of Figure 14.
  • Figures 27A-27H illustrate an exemplary lateral collection structure fabricated using metal seed, VLS catalyst, or both layers is disposed across the whole substrate. Atty. Docket No. 25416-0002
  • the lateral collection photovoltaic structure of Figure 2 can be fabricated from an interpenetrating network of a film material and a metal, semiconductor, or insulator material forming a large interface area.
  • the high surface area to volume film material can include collector structure 110, i.e., an array of one or more collector elements, e.g., an array of nano- and/or micro-protrusions, separated by voids or a void matrix, on a a conductive layer 112, which conductive layer 112 is on a non-conductive substrate 114.
  • the substrate can be a conductive material and can operate as the Atty. Docket No. 25416-0002
  • the collection structure 110 can be designed with the excitons determining the lateral collection length and thereby determining the inter-element or collector structure array spacing C. If free carriers are the principal entities collected at the collector element surfaces, the collection structure 110 can be designed so that the carrier collected is the one with the lower mobility. In this case, the collection length of the free carrier is the lateral collection length and the lateral collection length determines the collector structure spacing C. Whether the collecting elements of the collection structure 110 are principally collecting excitons or free carriers, the collection structure 110 provides a collecting interface within the appropriate collection length of essentially all of the active material. The collection structure 110 may or may not itself be an absorber.
  • the active materials have all the possibilities discussed above, as do the conductor materials.
  • the catalyst may be disposed on a patterned conductor by techniques such as self-assembly (e.g., catalyst particles tethered onto patterned Au using thiol bonds) or it may be patterned using, for example, any of the etching or deposition techniques discussed above for patterning a deposited material as well as by other techniques such as ink jet printing or the dip pen approach.
  • the collector elements themselves are then grown from a precursor at the catalyst positions at the required temperature. For example, if the collector structure 110 is to be silicon, then the precursor is a silicon bearing compound such as silane and the temperature, using gold (Au) as the catalyst, can be around 550 0 C or less.
  • Material bearing a dopant may also be used with the catalyst or with the precursor if the silicon (Si) is to be doped. Any residual catalyst present after growth may be removed from the collector elements using an etchant specific to the catalyst (e.g., a gold etchant for an Au catalyst for Si growth).
  • Nanoparticle catalysts for collector growth can be employed to automatically attain advantageous aspect ratios (AAV) in Figures 3-5, i.e., greater than one, for collector structures 110 where W is a measure of the collector element characteristic width. For example, if a nanoparticle catalyst for carbon nanotubes or wires is stamped onto a surface in the collector pattern, nanotube or wire growth can be exploited to give essentially perpendicular collector elements with advantageous aspect ratios. These stuctures can be used, as manufactured, as the collector elements, or coated (e.g., by electro-chemical means). Atty. Docket No. 25416-0002
  • the collector structure 110 which may be on a substrate including glass, metal foil, or plastic, is positioned by being pressed (in layed) into an already present active (absorber) material thereby also resulting in the structure of Figure 6.
  • Collector structures 110 for this in lay approach are produced in the same way collector structures 110 are produced in the discussion above, e.g., they may be produced by etching or deposition and techniques used may employ block-co-polymers, printing or stamping techniques, optical or e-beam lithography, and deposition/lift off or other approaches such as electrochemical deposition.
  • the collector elements may be on a conducting surface or be the entire electrode themselves.
  • the catalyst 128 may be positioned with the collector elements present. If desired, the catalyst 128 may be kept off the top surfaces of the collector elements by means such as masking. Alternatively, the catalyst 128 may be positioned before the collector elements are present. In this embodiment, the catalyst 128 is deposited using standard approaches with the requisite pattern needed to accommodate the collector structure 110 to be used. This pattern may be generated using approaches comprising block-co-polymer, stamping, imprinting, or beam or optical lithography methods and lift-off and/or etching. After VLS growth, the collector may be positioned with the absorber regions dictating the collector pattern by, for example, using deposition. Lift-off and/or etching may be used also.
  • the structures of Figures 10 and 11 can be positioned and produced using catalytic approaches.
  • the nano-particles 130 seen in Figure 10 act as a catalyst for the growth of the nano-elements 132 penetrating the active layer 116.
  • the nano-particles 130 may or may not remain after the nano-element 132 growth.
  • the metal nano-particles 130 can be designed to remain after growth to be used to generate plasmons to enhance light absorption on the active layer 116.
  • the collection of only one carrier is done at an angle to the absorption length direction.
  • the two electrodes are each formed, in general, of an independent array ofnano- and/or micro-scale elements.
  • the electrodes 134, 136 may be treated (e.g., with a plasma) or coated with films or with monolayers using self-assembly to adjust the workfunctions. Additionally, the electrode materials may also have energy band steps (off-sets) that act to block holes (at the cathode) or block electrons (at the anode) to assist in carrier collection.
  • energy band steps off-sets
  • sequential biasing of the first pattern with the first solution applied to the substrate may be used to obtain the electrochemical deposition of the first electrode 134 and sequential biasing of the second pattern with the second solution applied to the substrate may be used to obtain the electrochemical deposition of the second electrode 136.
  • the c-Si can be etched for the counter- electrode elements as shown in Figure 23E, a seed layer can be applied having a thickness of about lOOnm as shown in Figure 23F and the counter-electrode element is deposited, for example, by electrodeposition.
  • the actual SPC step may be done before or after the creation of the trenches used for the fabrication of the counter-electrode elements.
  • This figure shows high work function Ni counter-electrode elements, as an example. Since the first electrode was taken to be the cathode in Figure 23E, the counter- electrode can be composed of a high work function material, such as Ni or p-Si. The latter may be created by another application of a VLS catalyst layer at the bottom of the trenches which will house the anode and subsequent VLS deposition.
  • SISPC thereby removing impurities that may affect photo-carrier collection. SISPC is then done and the result is shown Figure 24D. The remainder of the processing proceeds as discussed above. After the material to undergo SISPC (a-Si in this example) is deposited, the etching of the second set of trenches may be accomplished before or after SISPC.
  • Figure 27D shows anodization being used to turn the second metal layer areas adjacent to the completed set of trenches into an insulating region.
  • Figure 27E shows Ni, as an example, being electro-deposited thereby forming the first set of electrode elements. Since Ni was chosen in this example, these elements constitute the anode.
  • Figure 27F shows the trenches being completed for the counter-electrode elements and being filled.
  • Al is shown as an exemplary low work function material.
  • Figures 27G and 27H depict the resist removal and the active layer positioning. Here the deposition of Si, which may be a-Si or polycrystalline, is shown, as an example. If the former is used, then Ni may be used for SPC. In that alternative, Al would be filled into the second set of trenches after SPC or would not be used for the low work function cathode material.
  • the completed structure is shown in Figure 27H.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne des structures photovoltaïques à collecte latérale comprenant des microéléments et des nanoéléments de collecte, utilisés pour collecter des porteuses photoproduites. Selon un mode de réalisation de l'invention, les éléments de collecte sont mis en réseau sur un substrat conducteur. Dans d'autres versions, les éléments de collecte sont sensiblement perpendiculaires au substrat conducteur. Dans un autre mode de réalisation, les éléments à l'échelle micro ou nano de collecte ne sont pas en contact direct physique et électrique avec le substrat conducteur. Dans une autre version, les deux électrodes cathode et anode sont mises en réseau de manière latérale. Dans une autre version, les éléments de collecte d'une électrode sont un matériau composite, un conducteur étant séparé par un élément isolant, lequel fait partie de chaque élément collecteur, à partir de l'électrode opposée résidant sur le substrat. Dans un autre mode de réalisation de l'invention, l'ensemble d'une structure d'électrode est un matériau composite contenant à la fois les éléments de collecte de l'anode et de la cathode pour la collecte. Un matériau actif est positionné parmi les éléments collecteurs.
PCT/US2008/068446 2007-06-26 2008-06-26 Photovoltaïques à collecte latérale WO2009003150A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/666,768 US20110023955A1 (en) 2007-06-26 2008-06-26 Lateral collection photovoltaics
EP08781048A EP2171763A2 (fr) 2007-06-26 2008-06-26 Photovoltaïques à collecte latérale

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US94625007P 2007-06-26 2007-06-26
US60/946,250 2007-06-26
USPCT/US2008/050780 2008-01-10
PCT/US2008/050780 WO2008086482A2 (fr) 2007-01-10 2008-01-10 Structures photovoltaïques à zone collectrice latérale
US11/972,491 2008-01-10
US11/972,491 US8294025B2 (en) 2002-06-08 2008-01-10 Lateral collection photovoltaics

Publications (2)

Publication Number Publication Date
WO2009003150A2 true WO2009003150A2 (fr) 2008-12-31
WO2009003150A3 WO2009003150A3 (fr) 2010-01-28

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US (1) US20110023955A1 (fr)
EP (1) EP2171763A2 (fr)
KR (1) KR20100051055A (fr)
WO (1) WO2009003150A2 (fr)

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