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WO2009087773A1 - Procédé de fabrication de panneau d'affichage à plasma et procédé de fabrication de structure de substrat pour panneau d'affichage à plasma - Google Patents

Procédé de fabrication de panneau d'affichage à plasma et procédé de fabrication de structure de substrat pour panneau d'affichage à plasma Download PDF

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Publication number
WO2009087773A1
WO2009087773A1 PCT/JP2008/050199 JP2008050199W WO2009087773A1 WO 2009087773 A1 WO2009087773 A1 WO 2009087773A1 JP 2008050199 W JP2008050199 W JP 2008050199W WO 2009087773 A1 WO2009087773 A1 WO 2009087773A1
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WO
WIPO (PCT)
Prior art keywords
glass
flow rate
forming
electrode
ito
Prior art date
Application number
PCT/JP2008/050199
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English (en)
Japanese (ja)
Inventor
Mikio Hamano
Hiroshi Yamanaka
Takashi Kawasaki
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP2008/050199 priority Critical patent/WO2009087773A1/fr
Publication of WO2009087773A1 publication Critical patent/WO2009087773A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H01J11/34—Vessels, containers or parts thereof, e.g. substrates
    • H01J11/38—Dielectric or insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
    • H01J11/12—AC-PDPs with at least one main electrode being out of contact with the plasma with main electrodes provided on both sides of the discharge space
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H01J11/22—Electrodes, e.g. special shape, material or configuration
    • H01J11/24—Sustain electrodes or scan electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems

Definitions

  • the present invention relates to a method for manufacturing a plasma display panel (hereinafter referred to as “PDP”) and a method for manufacturing a substrate structure for a PDP.
  • PDP plasma display panel
  • FIG. 6 is an exploded perspective view showing an example of the structure of a conventional AC-driven surface discharge PDP.
  • This PDP has a front side substrate structure 1 and a back side substrate structure 2.
  • a plurality of display electrodes 3 are arranged on the glass substrate 1a.
  • the display electrode 3 includes a transparent electrode 3a and a metal electrode 3b, respectively.
  • the display electrode 3 is covered with a dielectric layer 4 for AC driving.
  • the dielectric layer 4 is covered with a protective film 5.
  • address electrodes 6 extending in the direction intersecting the display electrodes 3 (column direction) are arranged on the glass substrate 2a.
  • the address electrode 6 is covered with a dielectric layer 9.
  • Partitions 7 are arranged on both sides of the address electrode 6 to divide cells in the column direction.
  • a phosphor layer 8 is formed on the dielectric layer 9 and on the side surface of the partition wall 7 to generate red (R), green (G), and blue (B) visible light when excited by ultraviolet rays.
  • the address electrode 6 may be disposed in the dielectric layer 4 of the front substrate structure 1 so as to intersect the display electrode 3.
  • a discharge gas such as Ne—Xe is sealed in the discharge space to produce a PDP.
  • an ITO (INDIUM TIN OXIDE, a mixture of indium oxide In 2 O 3 and tin oxide SnO 2 ) film 31a is formed on the substrate 1a to obtain the structure shown in FIG.
  • the ITO film 31a is patterned into an electrode shape to form a transparent electrode (hereinafter referred to as “ITO electrode”) 3a made of ITO, thereby obtaining the structure shown in FIG.
  • ITO electrode transparent electrode
  • a narrow metal electrode 3b is formed at the center on the ITO electrode 3a to obtain the structure shown in FIG.
  • the display electrode 3 is comprised by the ITO electrode 3a and the metal electrode 3b.
  • the metal electrode may be provided on the edge on the transparent electrode.
  • the dielectric layer 4 is formed so as to cover the display electrode 3, and the structure shown in FIG.
  • a protective film 5 is formed on the dielectric layer 4 to obtain the structure shown in FIG. 7E, and the manufacture of the front side substrate assembly 1 is completed.
  • the dielectric layer 4 covering the display electrode 3 is formed by forming a glass layer so as to cover the display electrode 3 and firing the glass layer.
  • a glass paste containing glass frit, a binder, and a solvent is applied on a substrate on which an electrode is formed, and then the solvent is dried (paste method), or a glass sheet containing glass frit and a binder is pasted on the substrate. (Sheet method). JP 2007-178774 A
  • bubbles may be generated during the firing due to a reaction at the interface between the display electrode 3 and the glass layer. This bubble is usually removed by the glass flowing.
  • a glass frit made of so-called lead-free glass that does not substantially contain lead may be used as the material of the dielectric layer 4. Since the lead-free glass generally has a high softening point, it is difficult to remove bubbles due to the flow of the glass, and the bubbles 4a may remain in the dielectric layer 4 even after firing (see FIG. 8).
  • the bubble residue in the dielectric layer 4 causes a problem of insulation failure after it is made into a panel, and the yield rate is greatly reduced. In the case of the front side substrate structure, the light transmittance is reduced by the bubble residue. Reduce the display brightness.
  • the present invention has been made in view of such circumstances, and provides a method for manufacturing a substrate structure for a PDP that can reduce bubble residues remaining in a dielectric layer after firing.
  • the method for manufacturing a substrate structure for a PDP according to the present invention includes a step of forming an ITO electrode on a substrate, forming a glass layer so as to cover the ITO electrode, and firing the glass layer to form a dielectric layer.
  • the glass in the glass layer is a glass frit that does not substantially contain lead, and the ITO electrode forming step forms an ITO film by sputtering in a mixed gas atmosphere containing a rare gas and an oxygen gas.
  • the flow rate ratio of the oxygen gas to the total flow rate of the mixed gas (hereinafter also referred to as “oxygen gas flow rate ratio”) is 1.0 to 2.5%.
  • the inventors of the present invention have found that when an ITO film is formed by sputtering under the above mixed gas, the larger the oxygen gas flow rate ratio, the less likely the bubble residue that remains in the dielectric layer is generated. It has been found that when the gas flow rate ratio is 1.0% or more, the number of foam residues generated is extremely reduced. In addition, when the oxygen gas flow rate ratio is 1.0% or more, the present inventors increase the sheet resistance of the ITO film as the oxygen gas flow rate ratio increases. However, the oxygen gas flow rate ratio is 2.5% or less. It has been found that the degree of increase in sheet resistance is small if any.
  • the present inventors suppress the generation of foam residue while suppressing an excessive increase in sheet resistance of the ITO film by setting the oxygen gas flow rate ratio to 1.0% to 2.5%. It was found experimentally that the present invention could be completed.
  • the oxygen gas flow ratio may be 1.5 to 2.0%.
  • the glass frit may be made of glass mainly composed of B 2 O 3 , SiO 2 and ZnO. The various embodiments shown here can be combined with one another.
  • FIG. 5 is a cross-sectional view showing the manufacturing process of the PDP substrate structure of one embodiment of the present invention in the order of steps (a) to (f). It is a graph which shows the relationship between the flow rate ratio of oxygen gas with respect to the total flow rate of mixed gas, and the sheet resistance of an ITO film
  • FIG. 10 is a cross-sectional view showing a manufacturing process of a conventional PDP front side substrate structure in the order of steps (a) to (e). It is sectional drawing which shows an example of the bubble which remains in a dielectric material layer.
  • Front side substrate structure 1a Front side substrate 2: Back side substrate structure 2a: Back side substrate 3: Display electrode 3a: Transparent electrode 3b: Metal electrode 4: Dielectric layer 4a: Bubbles in the dielectric layer 5: Protection Layer 6: Address electrode 7: Partition 8: Phosphor layer 9: Dielectric layer 15: Glass layer 31a: ITO film
  • FIGS. 1 (a) to 1 (f) are cross-sectional views showing the manufacturing process of the PDP substrate structure of the present embodiment.
  • description will be given by taking as an example a method of manufacturing a front-side substrate assembly having a display electrode 3 composed of an ITO electrode 3a and a metal electrode 3b and a dielectric layer 4 covering the display electrode 3.
  • the display electrode 3 composed of the ITO electrode 3a and the metal electrode 3b is formed on the substrate 1a, and the glass layer 15 is formed so as to cover the display electrode 3.
  • the step of forming the ITO film 31a by sputtering in a mixed gas atmosphere containing oxygen gas, and the flow rate ratio of the oxygen gas to the total flow rate of the mixed gas is 1.0 to 2.5%.
  • FIG. 1A an ITO film 31a is formed on a substrate 1a.
  • an ITO electrode (transparent electrode) 3a is formed by patterning the ITO film 31a into an electrode shape.
  • FIG. 1C a metal electrode 3b is formed on the ITO electrode 3a.
  • the display electrode 3 composed of the ITO electrode 3a and the metal electrode 3b is formed by the steps so far.
  • the type of the substrate 1a is not particularly limited, and the substrate 1a is made of a transparent substrate such as a glass substrate.
  • the ITO film 31a is formed by sputtering. This sputtering is performed under a mixed gas containing a rare gas and an oxygen gas.
  • the mixed gas preferably contains substantially only a rare gas and oxygen gas, but may contain other components.
  • the ratio of the total flow rate of the rare gas and oxygen gas to the total flow rate of the mixed gas is, for example, 80 to 100%, specifically, for example, 80, 85, 90, 95, 99, 99.9, 99.99. , 100%.
  • This flow rate ratio may be within a range between any two of the numerical values exemplified here, or may be any one or more.
  • the kind of noble gas is not specifically limited, For example, it is Ar gas.
  • the pressure of the mixed gas is not particularly limited, but is, for example, 0.1 to 10 Pa, and specifically, for example, 0.1, 0.5, 1, 2, 5, 10 Pa.
  • the pressure of the mixed gas may be within a range between any two of the numerical values exemplified here.
  • the flow rate ratio of oxygen gas to the total flow rate of the mixed gas is 1.0 to 2.5%, preferably 1.5 to 2.0%. This is because it has been experimentally confirmed that the generation of foam residue can be suppressed while suppressing an excessive increase in sheet resistance of the ITO film within this range.
  • the oxygen gas flow rate ratio is, for example, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.. 9, 2.0, 2.1, 2.2, 2.3, 2.4, and 2.5%.
  • the oxygen gas flow ratio may be within a range between any two of the numerical values exemplified here.
  • the type of the sputtering target is not particularly limited as long as an ITO film can be formed.
  • the sputtering target is a sintered body mainly composed of In 2 O 3 and SnO 2 .
  • the substrate temperature at the time of sputtering is not particularly limited, but is preferably a temperature equal to or higher than the crystallization temperature of the ITO film.
  • the ITO film becomes a polycrystalline film, and the electric resistance is lower than that of the amorphous (amorphous) ITO film.
  • the sputtering is preferably magnetron sputtering performed by arranging a magnet on the back surface of the target. This is because the ITO film is formed at a high rate.
  • the ITO film 31a can be patterned by forming a resist mask on the ITO film 31a and etching the ITO film 31a using the resist mask as a mask. As a result, an ITO electrode 3a patterned into an electrode shape is formed. Instead of patterning the ITO film 31a after the formation of the ITO film 31a, the ITO film 31a is formed with a mask having an electrode-shaped opening, so that the ITO film 31a is patterned when the ITO film 31a is formed. May be performed. In this case, the formed ITO film 31a becomes the ITO electrode 3a as it is.
  • the configuration and material of the metal electrode 3b are not particularly limited.
  • the metal electrode 3b has a three-layer structure of Cr / Cu / Cr, but is not limited thereto, and may be formed of, for example, Ag, Au, Al, Cu, Cr, or the like.
  • the metal electrode 3b uses a thick film forming technique such as screen printing for Ag and Au, and a thin film forming technique such as a vapor deposition method and a sputtering method and an etching technique for other metals, thereby obtaining a predetermined number and thickness. It can be formed with a height, width and spacing.
  • the shapes of the ITO electrode 3a and the metal electrode 3b are not particularly limited, and may be T-shaped or ladder-shaped.
  • the shapes of the ITO electrode 3a and the metal electrode 3b may be the same or different from each other.
  • the ITO electrode 3a may be T-shaped or ladder-shaped, and the metal electrode 3b may be straight.
  • Two display electrodes 3 are paired to form a display line.
  • an electrode arrangement form an arrangement in which a non-discharge region (also referred to as a reverse slit) is provided between electrode pairs, and electrodes are arranged at equal intervals.
  • the adjacent electrodes are arranged by any one of the ALIS type arrangements in which the entire discharge area is a discharge area.
  • This pair includes a scan electrode used for address discharge with the address electrode and a sustain electrode used for sustain discharge with the scan electrode.
  • a glass layer 15 is formed so as to cover the display electrode 3.
  • the glass layer 15 may contain glass and become the dielectric layer 4 by firing.
  • the glass in the glass layer 15 is a glass frit that does not substantially contain lead.
  • the glass layer 15 is formed by, for example, applying a glass paste containing glass frit, a binder, and a solvent on a substrate on which display electrodes are formed, and then drying the solvent (paste method), or by using a glass sheet containing glass frit and a binder. It can form by sticking on a board
  • the thickness of the glass layer 15 is not particularly limited, but is, for example, 10 to 30 ⁇ m.
  • the glass frit is not particularly limited as long as it contains substantially no lead.
  • Examples of the glass frit include glass containing B 2 O 3 , SiO 2, and ZnO as main components.
  • the softening point of the glass is not particularly limited, but is, for example, 450 to 600 ° C.
  • the dielectric layer 4 is formed by firing the glass layer 15 as shown in FIG.
  • the firing temperature is not particularly limited, but is, for example, 500 to 650 ° C.
  • bubbles generated at the time of firing may not be removed and remain in the dielectric layer 4 to cause problems such as a decrease in dielectric strength of the dielectric layer 4.
  • the dielectric The bubble residue in the layer 4 can be reduced, and this can suppress the occurrence of problems such as a decrease in dielectric strength of the dielectric layer 4.
  • a protective film 5 is formed on the dielectric layer 4 to complete the manufacture of the substrate structure for PDP of this embodiment.
  • the protective film 5 is made of a metal (more specifically, a divalent metal) oxide such as magnesium oxide, calcium oxide, strontium oxide, or barium oxide, and is preferably made of magnesium oxide.
  • the protective film 5 is formed by vapor deposition, sputtering, coating, or the like.
  • PDP Front side substrate assembly 1 provided with display electrode 3, dielectric layer 4, and protective film 5 on glass substrate 1a, address electrode 6, dielectric layer 9, and partition wall on glass substrate 2a 7 and a backside substrate structure 2 having a phosphor layer 8 are faced to each other so that a peripheral portion is bonded with a sealing material to obtain a panel having an airtight discharge space inside.
  • a PDP can be manufactured by enclosing a discharge gas (for example, neon mixed with about several percent of xenon) in the discharge space.
  • the front-side substrate assembly 1 can be manufactured using the method for manufacturing a PDP substrate assembly of the present invention.
  • an ITO film 31a was formed on the entire surface of the glass substrate 1a by sputtering.
  • a fired body containing In 2 O 3 and SnO 2 as main components was used as the sputtering target.
  • Sputtering was performed in a mixed gas atmosphere of oxygen gas and argon gas.
  • the ITO film 31a was formed to have a physical film thickness of about 0.16 ⁇ m.
  • the gas pressure of the mixed gas is about 0.7 Pa, and the flow rate ratio of oxygen gas to the total flow rate of the mixed gas (oxygen gas flow rate / mixed gas flow rate) is 0.25, 0.5, 1.0, 1.5, 2
  • the ITO film 31a was formed under five conditions of 0.0%.
  • FIG. 2 is a graph showing the relationship between the flow rate ratio of oxygen gas to the total flow rate of the mixed gas (oxygen gas flow rate ratio) and the sheet resistance of the ITO film 31a. Referring to this graph, when the oxygen gas flow rate ratio is 0.25 to 0.5%, the sheet resistance of the ITO film 31a is relatively small, and when the oxygen gas flow rate ratio exceeds 0.5%, the ITO film 31a It can be seen that the sheet resistance has become relatively large.
  • ITO film 31a is patterned into an electrode shape to form ITO electrode 3a, and metal electrode 3b having a three-layer structure of Cr / Cu / Cr is formed on ITO electrode 3a. did.
  • a low-melting glass paste was applied so as to cover the display electrode 3 composed of the ITO electrode 3a and the metal electrode 3b, and baked at a temperature of 650 ° C. or less to form the dielectric layer 4.
  • a lead-free glass frit mixed with a resin and a solvent was used as the low melting point glass paste.
  • Lead-free glass frit is composed mainly of SiO 2 (silicon oxide), B 2 O 3 (boron oxide), ZnO (zinc oxide), NaO (sodium oxide), Al 2 O 3 (aluminum oxide), CuO (copper oxide). ), In 2 O 3 (indium oxide), SnO 2 (tin oxide), and the like.
  • the content of PbO (lead oxide) is not more than the RoHS specified value.
  • the “bubble defect” means a bubble having a diameter of 50 ⁇ m or more.
  • the number of bubble defects was measured with an inspection device capable of recognizing such size bubbles.
  • FIG. 3 is a graph showing the relationship between the oxygen gas flow rate ratio and the number of bubble defects in the dielectric layer. Referring to FIG. 3, it can be seen that the number of bubble defects could be drastically reduced by setting the oxygen gas flow rate ratio at the time of forming the ITO film 31a to 1.0% or more.
  • the oxygen gas flow rate ratio is preferably 1.0% or more.
  • the oxygen gas flow rate ratio is 2.5% or less, the degree of increase in sheet resistance of the ITO film 31a is not so large. Therefore, it can be seen that by setting the oxygen gas flow rate ratio to 1.0 to 2.5%, it is possible to suppress the generation of foam residue while suppressing an excessive increase in the sheet resistance of the ITO film 31a. Note that when the oxygen gas flow rate ratio is set to 1.0 to 2.5%, the sheet resistance of the ITO electrode 3a slightly increases, but the resistance as the display electrode 3 is mainly determined by the metal electrode 3b, and therefore the ITO electrode 3a. The increase in the resistance value is considered not to be a problem.
  • etching rate of the ITO film 31a before dielectric firing was measured by the following method. First, an ITO film 31a formed on the glass substrate 1a was cut into small pieces, and half of the ITO film surface was masked as a sample. After the sample was etched for 15, 30, 45, 60, 75, and 90 seconds, the masking was removed, the level difference was measured with a stylus meter, and the etching rate was calculated.
  • FIG. 4 is a graph showing the relationship between the oxygen gas flow rate ratio and the etching rate of the ITO film 31a. Referring to FIG. 4, it was found that the etching rate tends to be slower as the oxygen gas flow ratio during the formation of the ITO film increases. It was also found that the etching rate of the ITO film before firing the dielectric that drastically reduces the bubble defects in the dielectric after firing the dielectric was 0.8 nm / second or less.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Gas-Filled Discharge Tubes (AREA)

Abstract

Cette invention porte sur un procédé, pour fabriquer une structure de substrat pour panneau d'affichage à plasma (PDP), qui peut réduire la quantité d'un résidu de mousse qui reste dans une couche diélectrique après la cuisson. Le procédé de fabrication est caractérisé par le fait qu'il consiste à former une électrode transparente faite d'ITO sur un substrat, à former une couche de verre de façon à couvrir l'électrode transparente, et à cuire la couche de verre pour former une couche diélectrique, le verre dans la couche de verre étant une fritte de verre sensiblement exempte de plomb, l'étape de fabrication de l'électrode transparente comportant l'étape de fabrication d'un film ITO par pulvérisation cathodique dans une atmosphère de mélange gazeux contenant un gaz rare et un gaz oxygène, et le rapport de débit du gaz oxygène sur le débit total du mélange gazeux étant de 1,0 à 2,5 %.
PCT/JP2008/050199 2008-01-10 2008-01-10 Procédé de fabrication de panneau d'affichage à plasma et procédé de fabrication de structure de substrat pour panneau d'affichage à plasma WO2009087773A1 (fr)

Priority Applications (1)

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PCT/JP2008/050199 WO2009087773A1 (fr) 2008-01-10 2008-01-10 Procédé de fabrication de panneau d'affichage à plasma et procédé de fabrication de structure de substrat pour panneau d'affichage à plasma

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Application Number Priority Date Filing Date Title
PCT/JP2008/050199 WO2009087773A1 (fr) 2008-01-10 2008-01-10 Procédé de fabrication de panneau d'affichage à plasma et procédé de fabrication de structure de substrat pour panneau d'affichage à plasma

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WO2009087773A1 true WO2009087773A1 (fr) 2009-07-16

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000112400A (ja) * 1998-10-01 2000-04-21 Asahi Glass Co Ltd プラズマディスプレイパネル用透明導電膜および電極
JP2003342734A (ja) * 2002-05-24 2003-12-03 Konica Minolta Holdings Inc 透明導電膜、その形成方法及びそれを有する物品
JP2004319188A (ja) * 2003-04-14 2004-11-11 Mitsui Chemicals Inc 透明電極およびプラズマ表示素子
JP2007134317A (ja) * 2005-10-13 2007-05-31 Asahi Glass Co Ltd プラズマディスプレイパネル前面板用ガラス基板
JP2007305528A (ja) * 2006-05-15 2007-11-22 Fujitsu Hitachi Plasma Display Ltd プラズマディスプレイパネルおよびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000112400A (ja) * 1998-10-01 2000-04-21 Asahi Glass Co Ltd プラズマディスプレイパネル用透明導電膜および電極
JP2003342734A (ja) * 2002-05-24 2003-12-03 Konica Minolta Holdings Inc 透明導電膜、その形成方法及びそれを有する物品
JP2004319188A (ja) * 2003-04-14 2004-11-11 Mitsui Chemicals Inc 透明電極およびプラズマ表示素子
JP2007134317A (ja) * 2005-10-13 2007-05-31 Asahi Glass Co Ltd プラズマディスプレイパネル前面板用ガラス基板
JP2007305528A (ja) * 2006-05-15 2007-11-22 Fujitsu Hitachi Plasma Display Ltd プラズマディスプレイパネルおよびその製造方法

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