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WO2009040972A1 - Sheet plasma film forming apparatus - Google Patents

Sheet plasma film forming apparatus Download PDF

Info

Publication number
WO2009040972A1
WO2009040972A1 PCT/JP2008/001854 JP2008001854W WO2009040972A1 WO 2009040972 A1 WO2009040972 A1 WO 2009040972A1 JP 2008001854 W JP2008001854 W JP 2008001854W WO 2009040972 A1 WO2009040972 A1 WO 2009040972A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
sheet
substrate
film forming
sheet plasma
Prior art date
Application number
PCT/JP2008/001854
Other languages
French (fr)
Japanese (ja)
Inventor
Takayuki Tsuchiya
Masao Marunaka
Noriaki Miyazaki
Yasukuni Iwasaki
Atsuhiro Terakura
Etsuro Nishida
Daisuke Akaishi
Original Assignee
Shinmaywa Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinmaywa Industries, Ltd. filed Critical Shinmaywa Industries, Ltd.
Publication of WO2009040972A1 publication Critical patent/WO2009040972A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A sheet plasma film forming apparatus is provided with a plasma gun (1); a sheet plasma deforming mechanism for deforming plasma flowing between a cathode (13) and an anode (42) into a sheet shape; a film forming chamber (3) wherein the sheet-like plasma (hereinafter, referred to as sheet plasma) (SP) flows; a first magnetic field generator (36), which generates magnetic field wherein a magnetic line directs toward the sheet plasma (SP) from the substrate (24), on a side close to the sheet plasma (SP) in a space (herein after, referred to as substrate space) (39) formed between the sheet plasma (SP) inside the film forming chamber (3) and the substrate (24); and a second magnetic field generator (37), which generates magnetic field wherein a magnetic line directs toward the substrate (24) from the sheet plasma (SP), on a side close to the substrate (24) in the substrate space (39).
PCT/JP2008/001854 2007-09-26 2008-07-10 Sheet plasma film forming apparatus WO2009040972A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007249409 2007-09-26
JP2007-249409 2007-09-26

Publications (1)

Publication Number Publication Date
WO2009040972A1 true WO2009040972A1 (en) 2009-04-02

Family

ID=40510884

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001854 WO2009040972A1 (en) 2007-09-26 2008-07-10 Sheet plasma film forming apparatus

Country Status (2)

Country Link
TW (1) TW200926906A (en)
WO (1) WO2009040972A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066085A (en) * 2009-09-15 2011-03-31 Shinmaywa Industries Ltd Sputtering system, sputtering method and film-forming system

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011007834A1 (en) * 2009-07-17 2011-01-20 株式会社アルバック Film-forming apparatus and film-forming method
JP5373903B2 (en) * 2009-07-17 2013-12-18 株式会社アルバック Deposition equipment
JP5373904B2 (en) * 2009-07-17 2013-12-18 株式会社アルバック Deposition equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62200530A (en) * 1986-02-27 1987-09-04 Mitsubishi Electric Corp Manufacture of vertical magnetic recording medium
JPH07300669A (en) * 1994-04-28 1995-11-14 Sumitomo Heavy Ind Ltd Sputtering device using sheet plasma
JPH10152774A (en) * 1996-11-21 1998-06-09 Ulvac Japan Ltd Sputtering system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62200530A (en) * 1986-02-27 1987-09-04 Mitsubishi Electric Corp Manufacture of vertical magnetic recording medium
JPH07300669A (en) * 1994-04-28 1995-11-14 Sumitomo Heavy Ind Ltd Sputtering device using sheet plasma
JPH10152774A (en) * 1996-11-21 1998-06-09 Ulvac Japan Ltd Sputtering system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066085A (en) * 2009-09-15 2011-03-31 Shinmaywa Industries Ltd Sputtering system, sputtering method and film-forming system

Also Published As

Publication number Publication date
TW200926906A (en) 2009-06-16

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