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WO2008149799A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
WO2008149799A1
WO2008149799A1 PCT/JP2008/060006 JP2008060006W WO2008149799A1 WO 2008149799 A1 WO2008149799 A1 WO 2008149799A1 JP 2008060006 W JP2008060006 W JP 2008060006W WO 2008149799 A1 WO2008149799 A1 WO 2008149799A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
trenches
semiconductor device
adjacent trenches
peripheries
Prior art date
Application number
PCT/JP2008/060006
Other languages
English (en)
French (fr)
Inventor
Masaru Takaishi
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007143217A external-priority patent/JP2008300495A/ja
Priority claimed from JP2007150444A external-priority patent/JP2008305904A/ja
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to US12/601,916 priority Critical patent/US8860129B2/en
Publication of WO2008149799A1 publication Critical patent/WO2008149799A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

　オン抵抗を大幅に低減することが可能な半導体装置を提供する。この半導体装置は、隣接するトレンチ（３）間の各領域がチャネル（９）となるｎ型エピタキシャル層（２）と、複数のトレンチ（３）の各々の内面上にシリコン酸化膜（４）を介して形成された複数の埋め込み電極（５）とを備えている。そして、複数のトレンチ（３）の各々の周辺に形成される全ての空乏層（１０）で隣接するトレンチ（３）間の各領域を塞ぐことにより、隣接するトレンチ（３）間の各領域を流れる電流が遮断される一方、複数のトレンチ（３）の各々の周辺に形成された全ての空乏層（１０）を消滅させることにより、隣接するトレンチ（３）間の各領域を介して電流が流れるように構成されている。
PCT/JP2008/060006 2007-05-30 2008-05-30 半導体装置 WO2008149799A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/601,916 US8860129B2 (en) 2007-05-30 2008-05-30 Semiconductor device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007143217A JP2008300495A (ja) 2007-05-30 2007-05-30 半導体装置
JP2007-143217 2007-05-30
JP2007-150444 2007-06-06
JP2007150444A JP2008305904A (ja) 2007-06-06 2007-06-06 半導体装置

Publications (1)

Publication Number Publication Date
WO2008149799A1 true WO2008149799A1 (ja) 2008-12-11

Family

ID=40093617

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060006 WO2008149799A1 (ja) 2007-05-30 2008-05-30 半導体装置

Country Status (2)

Country Link
US (1) US8860129B2 (ja)
WO (1) WO2008149799A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011001588A1 (ja) * 2009-06-29 2011-01-06 株式会社デンソー 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008149800A1 (ja) 2007-05-30 2008-12-11 Rohm Co., Ltd. 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224277A (ja) * 2002-01-31 2003-08-08 Denso Corp 炭化珪素半導体装置とその製造方法
JP2003229570A (ja) * 2001-11-27 2003-08-15 Nissan Motor Co Ltd 炭化珪素半導体を用いた電界効果トランジスタ
JP2004356383A (ja) * 2003-05-29 2004-12-16 Shindengen Electric Mfg Co Ltd 半導体装置
JP2005101551A (ja) * 2003-08-29 2005-04-14 Fuji Electric Holdings Co Ltd 半導体装置とその製造方法およびその半導体装置を用いた双方向スイッチ素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0339962A3 (en) 1988-04-27 1990-09-26 General Electric Company Field effect semiconductor device
JP3319228B2 (ja) 1994-12-09 2002-08-26 富士電機株式会社 たて型半導体素子およびその製造方法
JP3575331B2 (ja) 1999-05-17 2004-10-13 日産自動車株式会社 電界効果トランジスタ
JP2001007149A (ja) 1999-06-24 2001-01-12 Nec Corp 高出力半導体装置
JP2001168333A (ja) 1999-09-30 2001-06-22 Toshiba Corp トレンチゲート付き半導体装置
US7157785B2 (en) 2003-08-29 2007-01-02 Fuji Electric Device Technology Co., Ltd. Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices
US7368777B2 (en) * 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7405452B2 (en) * 2004-02-02 2008-07-29 Hamza Yilmaz Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
US7462908B2 (en) * 2004-07-14 2008-12-09 International Rectifier Corporation Dynamic deep depletion field effect transistor
JP2006332607A (ja) * 2005-04-28 2006-12-07 Nec Electronics Corp 半導体装置
WO2008149800A1 (ja) 2007-05-30 2008-12-11 Rohm Co., Ltd. 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229570A (ja) * 2001-11-27 2003-08-15 Nissan Motor Co Ltd 炭化珪素半導体を用いた電界効果トランジスタ
JP2003224277A (ja) * 2002-01-31 2003-08-08 Denso Corp 炭化珪素半導体装置とその製造方法
JP2004356383A (ja) * 2003-05-29 2004-12-16 Shindengen Electric Mfg Co Ltd 半導体装置
JP2005101551A (ja) * 2003-08-29 2005-04-14 Fuji Electric Holdings Co Ltd 半導体装置とその製造方法およびその半導体装置を用いた双方向スイッチ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011001588A1 (ja) * 2009-06-29 2011-01-06 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
US8860129B2 (en) 2014-10-14
US20100072546A1 (en) 2010-03-25

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