[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

WO2008021125A3 - procédé de préparation d'un film mis en motifs avec un solvant de développement - Google Patents

procédé de préparation d'un film mis en motifs avec un solvant de développement Download PDF

Info

Publication number
WO2008021125A3
WO2008021125A3 PCT/US2007/017624 US2007017624W WO2008021125A3 WO 2008021125 A3 WO2008021125 A3 WO 2008021125A3 US 2007017624 W US2007017624 W US 2007017624W WO 2008021125 A3 WO2008021125 A3 WO 2008021125A3
Authority
WO
WIPO (PCT)
Prior art keywords
film
developing solvent
exposed
substrate
preparing
Prior art date
Application number
PCT/US2007/017624
Other languages
English (en)
Other versions
WO2008021125A2 (fr
Inventor
Herman C G D C Meynen
Brian Harkness
Original Assignee
Dow Corning
Herman C G D C Meynen
Brian Harkness
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning, Herman C G D C Meynen, Brian Harkness filed Critical Dow Corning
Priority to JP2009524622A priority Critical patent/JP5117498B2/ja
Priority to EP07836621.8A priority patent/EP2052292B1/fr
Priority to KR1020147022523A priority patent/KR20140110086A/ko
Priority to KR1020097003068A priority patent/KR101540275B1/ko
Priority to CN2007800302565A priority patent/CN101501571B/zh
Priority to US12/377,246 priority patent/US8227181B2/en
Publication of WO2008021125A2 publication Critical patent/WO2008021125A2/fr
Publication of WO2008021125A3 publication Critical patent/WO2008021125A3/fr
Priority to US13/494,640 priority patent/US20120256303A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention concerne un procédé de préparation d'un film mis en motifs sur un substrat consistant à appliquer une composition de silicone sur un substrat pour constituer un film de la composition de silicone. Une partie du film est exposée à un rayonnement pour obtenir un film partiellement exposé possédant une région exposée et une région non exposée. Le film partiellement exposé est chauffé pendant un temps suffisant et à une température suffisante pour sensiblement insolubiliser la région exposée dans un solvant de développement comprenant un composant siloxane. On retire la région non exposée du film partiellement exposé avec le solvant de développement pour faire apparaître une région exempte de film sur le substrat et pour constituer le film mis en motifs comprenant la région exposée qui reste sur le substrat. La région exempte de film est sensiblement exempte de silicone résiduelle du fait de la présence du composant siloxane dans le solvant de développement.
PCT/US2007/017624 2006-08-14 2007-08-08 procédé de préparation d'un film mis en motifs avec un solvant de développement WO2008021125A2 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009524622A JP5117498B2 (ja) 2006-08-14 2007-08-08 現像溶媒によるパターン化フィルムの調製方法
EP07836621.8A EP2052292B1 (fr) 2006-08-14 2007-08-08 Procédé de préparation d'un film mis en motifs avec un solvant de développement
KR1020147022523A KR20140110086A (ko) 2006-08-14 2007-08-08 현상 용매로 패턴 형성 필름을 제조하는 방법
KR1020097003068A KR101540275B1 (ko) 2006-08-14 2007-08-08 현상 용매로 패턴 형성 필름을 제조하는 방법
CN2007800302565A CN101501571B (zh) 2006-08-14 2007-08-08 使用显影溶剂制备图案化膜的方法
US12/377,246 US8227181B2 (en) 2006-08-14 2007-08-08 Method of preparing a patterned film with a developing solvent
US13/494,640 US20120256303A1 (en) 2006-08-14 2012-06-12 Method of preparing a patterned film with a developing solvent

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82227806P 2006-08-14 2006-08-14
US60/822,278 2006-08-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/494,640 Division US20120256303A1 (en) 2006-08-14 2012-06-12 Method of preparing a patterned film with a developing solvent

Publications (2)

Publication Number Publication Date
WO2008021125A2 WO2008021125A2 (fr) 2008-02-21
WO2008021125A3 true WO2008021125A3 (fr) 2008-04-17

Family

ID=38988074

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/017624 WO2008021125A2 (fr) 2006-08-14 2007-08-08 procédé de préparation d'un film mis en motifs avec un solvant de développement

Country Status (8)

Country Link
US (2) US8227181B2 (fr)
EP (1) EP2052292B1 (fr)
JP (1) JP5117498B2 (fr)
KR (2) KR20140110086A (fr)
CN (1) CN101501571B (fr)
MY (1) MY153136A (fr)
TW (1) TWI417941B (fr)
WO (1) WO2008021125A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519513B2 (en) 2012-01-04 2013-08-27 Freescale Semiconductor, Inc. Semiconductor wafer plating bus
US9920280B2 (en) * 2016-02-25 2018-03-20 The United States Of America, As Represented By The Secretary Of The Navy Non-aqueous siloxane solvent compositions for cleaning a metal or plastic surface
KR102610448B1 (ko) * 2016-08-12 2023-12-07 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2738131B2 (ja) * 1990-05-28 1998-04-08 信越化学工業株式会社 パターン形成方法
US6617674B2 (en) * 2001-02-20 2003-09-09 Dow Corning Corporation Semiconductor package and method of preparing same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2676182A (en) * 1950-09-13 1954-04-20 Dow Corning Copolymeric siloxanes and methods of preparing them
JPS56157464A (en) * 1980-05-09 1981-12-04 Toshiba Silicone Co Ltd Coat formation
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
US4510176A (en) * 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
US4510094A (en) * 1983-12-06 1985-04-09 Minnesota Mining And Manufacturing Company Platinum complex
US4584355A (en) * 1984-10-29 1986-04-22 Dow Corning Corporation Silicone pressure-sensitive adhesive process and product with improved lap-shear stability-I
US4585836A (en) * 1984-10-29 1986-04-29 Dow Corning Corporation Silicone pressure-sensitive adhesive process and product with improved lap-shear stability-II
US4591622A (en) * 1984-10-29 1986-05-27 Dow Corning Corporation Silicone pressure-sensitive adhesive process and product thereof
DE4423195A1 (de) * 1994-07-01 1996-01-04 Wacker Chemie Gmbh Triazenoxid-Übergangsmetall-Komplexe als Hydrosilylierungskatalysatoren
US5454970A (en) * 1994-08-11 1995-10-03 Dow Corning Corporation Octamethyltrisiloxane containing azeotropes
US6114254A (en) * 1996-10-15 2000-09-05 Micron Technology, Inc. Method for removing contaminants from a semiconductor wafer
TW345681B (en) * 1996-12-13 1998-11-21 Taiwan Semiconductor Mfg Co Ltd Method for removing covering layer on the peripheral edge portion of wafer
US6033589A (en) * 1997-09-30 2000-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method for depositing a coating layer on a wafer without edge bead formation
US6287477B1 (en) * 1999-10-18 2001-09-11 Honeywell International Inc. Solvents for processing silsesquioxane and siloxane resins
KR100480235B1 (ko) * 2002-07-18 2005-04-06 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
AU2003261279A1 (en) * 2003-07-28 2005-03-07 Dow Corning Corporation Method for etching a patterned silicone layyer
US7270931B2 (en) * 2003-10-06 2007-09-18 International Business Machines Corporation Silicon-containing compositions for spin-on ARC/hardmask materials
CN100480329C (zh) * 2004-02-02 2009-04-22 陶氏康宁公司 Mq和t丙基硅氧烷树脂组合物
JP4541080B2 (ja) * 2004-09-16 2010-09-08 東京応化工業株式会社 反射防止膜形成用組成物およびこれを用いた配線形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2738131B2 (ja) * 1990-05-28 1998-04-08 信越化学工業株式会社 パターン形成方法
US6617674B2 (en) * 2001-02-20 2003-09-09 Dow Corning Corporation Semiconductor package and method of preparing same

Also Published As

Publication number Publication date
CN101501571B (zh) 2013-08-21
JP2010500629A (ja) 2010-01-07
KR20140110086A (ko) 2014-09-16
JP5117498B2 (ja) 2013-01-16
US20100178472A1 (en) 2010-07-15
KR20090038013A (ko) 2009-04-17
US8227181B2 (en) 2012-07-24
WO2008021125A2 (fr) 2008-02-21
TW200818260A (en) 2008-04-16
EP2052292B1 (fr) 2014-02-26
KR101540275B1 (ko) 2015-07-29
EP2052292A2 (fr) 2009-04-29
CN101501571A (zh) 2009-08-05
MY153136A (en) 2014-12-31
US20120256303A1 (en) 2012-10-11
TWI417941B (zh) 2013-12-01

Similar Documents

Publication Publication Date Title
EP2319892A4 (fr) Composition d'adhésif photosensible, adhésif en film photosensible, motif d adhésif, tranche de semi-conducteur avec un adhésif, dispositif à semi-conducteur et composant électronique
WO2008127404A3 (fr) Dispositif optique de biopolymère à nanomotifs et procédé de fabrication de celui-ci
WO2008005208A3 (fr) Précurseur de forme d'impression et procédé servant à préparer une empreinte à partir du précurseur
WO2006060758A3 (fr) Procedes d'exposition destines a la gestion thermique de procedes de lithographie par impression
TW200707125A (en) Immersion lithography and treatment method thereof
WO2005109095A3 (fr) Procede d'impression de lithographies a une temperature constante
JP2011505973A5 (fr)
WO2010064185A3 (fr) Appareils électroniques comportant des substrats de plastique
WO2008009575A3 (fr) Bases photolatentes pour adhésifs
BRPI0814505A2 (pt) Método para fixar um filme sobre um substrato curvado
MXPA05012539A (es) Composicion desmoldante y proceso con la misma.
TW200739137A (en) Method for forming surface unevenness
FR2903811B1 (fr) Dispositif electronique comprenant des composants electroniques relies a un substrat et mutuellement connectes et procede de fabrication d'un tel dispositif
TW200745764A (en) Coating compositions for photolithography
WO2009028455A1 (fr) Feuille adhésive détachable et procédé de protection d'un film de revêtement incomplètement durci
WO2010107851A3 (fr) Fabrication rapide d'un support microélectronique temporaire pour substrats inorganiques
DE602006018976D1 (de) Verfahren zum abtrennen von hochtemperaturfilmen und/oder vorrichtungen von metallsubstraten
TWI266373B (en) Pattern forming method and method of manufacturing semiconductor device
WO2006023037A3 (fr) Materiaux silicones photopolymerisables formant des membranes semi-permeables pour capteurs
WO2008021125A3 (fr) procédé de préparation d'un film mis en motifs avec un solvant de développement
WO2007103539A3 (fr) Fabrication de matériaux inorganiques mettant en oeuvre des modèles à liaison labile
WO2006019581A3 (fr) Appareil et procede servant a effectuer le developpement thermique d'elements d'impression flexographique
WO2009158383A3 (fr) Procédé de fabrication d'un ruban adhésif durcissable et d'une couche isolante sur un support conducteur
TW200801815A (en) Method for forming pattern and composition for forming organic thin film using therefor
TW201205528A (en) Electronic apparatus and method of fabricating the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780030256.5

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 12377246

Country of ref document: US

Ref document number: 2007836621

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2009524622

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020097003068

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07836621

Country of ref document: EP

Kind code of ref document: A2