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WO2008088018A1 - 半導体受光素子 - Google Patents

半導体受光素子 Download PDF

Info

Publication number
WO2008088018A1
WO2008088018A1 PCT/JP2008/050529 JP2008050529W WO2008088018A1 WO 2008088018 A1 WO2008088018 A1 WO 2008088018A1 JP 2008050529 W JP2008050529 W JP 2008050529W WO 2008088018 A1 WO2008088018 A1 WO 2008088018A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
receiving
mesa
receiving device
semiconductor substrate
Prior art date
Application number
PCT/JP2008/050529
Other languages
English (en)
French (fr)
Inventor
Sawaki Watanabe
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to US12/521,940 priority Critical patent/US7924380B2/en
Priority to JP2008554079A priority patent/JP5228922B2/ja
Publication of WO2008088018A1 publication Critical patent/WO2008088018A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

　受光素子１は、半導体基板１０１と、この半導体基板１０１上に設けられた受光層、および半導体基板１０１と受光層の間に受信光以外の光を吸収するフィルタ層１０３を有し、受光層となる第一メサ１１が、少なくとも受信光以外の光を吸収する第三メサ１３により取り囲まれている。その結果、フィルタ層１０３が薄く、受信光以外の光が十分に吸収できなくとも、第三メサ１３で吸収されるため、第一メサ１１への到達を抑制できる。
PCT/JP2008/050529 2007-01-18 2008-01-17 半導体受光素子 WO2008088018A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/521,940 US7924380B2 (en) 2007-01-18 2008-01-17 Semiconductor light-receiving device
JP2008554079A JP5228922B2 (ja) 2007-01-18 2008-01-17 半導体受光素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007009186 2007-01-18
JP2007-009186 2007-01-18

Publications (1)

Publication Number Publication Date
WO2008088018A1 true WO2008088018A1 (ja) 2008-07-24

Family

ID=39636019

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050529 WO2008088018A1 (ja) 2007-01-18 2008-01-17 半導体受光素子

Country Status (3)

Country Link
US (1) US7924380B2 (ja)
JP (1) JP5228922B2 (ja)
WO (1) WO2008088018A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016050833A (ja) * 2014-08-29 2016-04-11 旭化成エレクトロニクス株式会社 赤外線センサ装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6030416B2 (ja) * 2012-11-15 2016-11-24 日本電信電話株式会社 アバランシェフォトダイオードおよびその製造方法
CN103996737B (zh) * 2014-05-07 2017-02-15 中山大学 一种吸收、倍增层分离且具有滤波功能的可见光雪崩光电探测器
CN104078520B (zh) * 2014-06-27 2016-09-14 中山大学 一种具有窄带光谱响应的电子输运可见光光电探测器
JP2017076651A (ja) * 2015-10-13 2017-04-20 富士通株式会社 半導体受光装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832105A (ja) * 1994-07-21 1996-02-02 Hitachi Ltd 光半導体装置
JP2001028454A (ja) * 1999-07-15 2001-01-30 Sumitomo Electric Ind Ltd 半導体受光素子
JP2003243693A (ja) * 2002-02-19 2003-08-29 Oki Electric Ind Co Ltd 半導体受光素子，及び，半導体部品
JP2004047728A (ja) * 2002-07-11 2004-02-12 Hamamatsu Photonics Kk 半導体光源装置
JP2005101113A (ja) * 2003-09-22 2005-04-14 Matsushita Electric Ind Co Ltd 受光素子および光通信モジュール
JP2005108955A (ja) * 2003-09-29 2005-04-21 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法、光通信モジュール

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2671843B2 (ja) 1994-12-27 1997-11-05 日本電気株式会社 半導体光集積素子とその製造方法
JP3046970B1 (ja) 1999-09-14 2000-05-29 住友電気工業株式会社 半導体受光素子
KR100393389B1 (ko) * 2001-02-07 2003-07-31 엘지.필립스 엘시디 주식회사 콜레스테릭 액정 컬러필터를 이용한 반사형 액정표시장치
US6525347B2 (en) * 2001-03-12 2003-02-25 Matsushita Electric Industrial Co., Ltd. Photodetector and unit mounted with photodetector
JP2004241588A (ja) 2003-02-05 2004-08-26 Matsushita Electric Ind Co Ltd 受光素子およびその製造方法ならびに当該受光素子を用いた光モジュール

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832105A (ja) * 1994-07-21 1996-02-02 Hitachi Ltd 光半導体装置
JP2001028454A (ja) * 1999-07-15 2001-01-30 Sumitomo Electric Ind Ltd 半導体受光素子
JP2003243693A (ja) * 2002-02-19 2003-08-29 Oki Electric Ind Co Ltd 半導体受光素子，及び，半導体部品
JP2004047728A (ja) * 2002-07-11 2004-02-12 Hamamatsu Photonics Kk 半導体光源装置
JP2005101113A (ja) * 2003-09-22 2005-04-14 Matsushita Electric Ind Co Ltd 受光素子および光通信モジュール
JP2005108955A (ja) * 2003-09-29 2005-04-21 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法、光通信モジュール

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016050833A (ja) * 2014-08-29 2016-04-11 旭化成エレクトロニクス株式会社 赤外線センサ装置

Also Published As

Publication number Publication date
JPWO2008088018A1 (ja) 2010-05-13
US7924380B2 (en) 2011-04-12
JP5228922B2 (ja) 2013-07-03
US20100044818A1 (en) 2010-02-25

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