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WO2007117576A3 - Gas manifolds for use during epitaxial film formation - Google Patents

Gas manifolds for use during epitaxial film formation Download PDF

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Publication number
WO2007117576A3
WO2007117576A3 PCT/US2007/008541 US2007008541W WO2007117576A3 WO 2007117576 A3 WO2007117576 A3 WO 2007117576A3 US 2007008541 W US2007008541 W US 2007008541W WO 2007117576 A3 WO2007117576 A3 WO 2007117576A3
Authority
WO
WIPO (PCT)
Prior art keywords
film formation
epitaxial film
use during
during epitaxial
gas manifolds
Prior art date
Application number
PCT/US2007/008541
Other languages
French (fr)
Other versions
WO2007117576A2 (en
Inventor
David Ishikawa
Craig R Metzner
Ali Zojaji
Yihwan Kim
Arkadii V Samoilov
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2009504307A priority Critical patent/JP2009533843A/en
Priority to EP07754972A priority patent/EP2021525A2/en
Publication of WO2007117576A2 publication Critical patent/WO2007117576A2/en
Publication of WO2007117576A3 publication Critical patent/WO2007117576A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber (101) adapted to form an epitaxial layer on a substrate; a deposition gas manifold (103) adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold (109), separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber.
PCT/US2007/008541 2006-04-07 2007-04-06 Gas manifolds for use during epitaxial film formation WO2007117576A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009504307A JP2009533843A (en) 2006-04-07 2007-04-06 Gas manifold for use during epitaxial film formation
EP07754972A EP2021525A2 (en) 2006-04-07 2007-04-06 Gas manifolds for use during epitaxial film formation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79022706P 2006-04-07 2006-04-07
US60/790,227 2006-04-07

Publications (2)

Publication Number Publication Date
WO2007117576A2 WO2007117576A2 (en) 2007-10-18
WO2007117576A3 true WO2007117576A3 (en) 2008-10-16

Family

ID=38581635

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/008541 WO2007117576A2 (en) 2006-04-07 2007-04-06 Gas manifolds for use during epitaxial film formation

Country Status (6)

Country Link
EP (1) EP2021525A2 (en)
JP (1) JP2009533843A (en)
KR (1) KR20090006144A (en)
CN (1) CN101415859A (en)
TW (1) TW200805456A (en)
WO (1) WO2007117576A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US7655543B2 (en) * 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
CN101643904B (en) * 2009-08-27 2011-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 Deep silicon etching device and intake system thereof
JP5864360B2 (en) * 2011-06-30 2016-02-17 東京エレクトロン株式会社 Silicon film forming method and apparatus therefor
WO2015191268A1 (en) * 2014-06-13 2015-12-17 Applied Materials, Inc. Dual auxiliary dopant inlets on epi chamber
US20220108875A1 (en) 2019-01-31 2022-04-07 Lam Research Corporation Multi-location gas injection to improve uniformity in rapid alternating processes

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US20030066486A1 (en) * 2001-08-30 2003-04-10 Applied Materials, Inc. Microwave heat shield for plasma chamber
US6590344B2 (en) * 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
US20040182423A1 (en) * 2003-03-07 2004-09-23 Takashi Nakao Method for cleaning a manufacturing apparatus and a manufacturing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
US20030066486A1 (en) * 2001-08-30 2003-04-10 Applied Materials, Inc. Microwave heat shield for plasma chamber
US6590344B2 (en) * 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
US20040182423A1 (en) * 2003-03-07 2004-09-23 Takashi Nakao Method for cleaning a manufacturing apparatus and a manufacturing apparatus

Also Published As

Publication number Publication date
JP2009533843A (en) 2009-09-17
CN101415859A (en) 2009-04-22
TW200805456A (en) 2008-01-16
KR20090006144A (en) 2009-01-14
EP2021525A2 (en) 2009-02-11
WO2007117576A2 (en) 2007-10-18

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