WO2007117000A1 - Semiconductor laser module for excitation - Google Patents
Semiconductor laser module for excitation Download PDFInfo
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- WO2007117000A1 WO2007117000A1 PCT/JP2007/057843 JP2007057843W WO2007117000A1 WO 2007117000 A1 WO2007117000 A1 WO 2007117000A1 JP 2007057843 W JP2007057843 W JP 2007057843W WO 2007117000 A1 WO2007117000 A1 WO 2007117000A1
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- excitation
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- semiconductor laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094049—Guiding of the pump light
- H01S3/094053—Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/0222—Gas-filled housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02235—Getter material for absorbing contamination
Definitions
- the present invention relates to a laser package in a pumping semiconductor laser module that has high output and high reliability used in an optical amplifier.
- EDFAs Er-doped fiber amplifiers
- semiconductor lasers with wavelengths of 980 and 1480 nm as pumping light sources.
- EDFAs tend to increase in output with the evolution of optical networks and circuits. For this reason, pumping semiconductor lasers have also increased in output, especially in the 980 nm band.
- the EDF A excitation laser used in the optical network is generally a single-mode laser, but the energy density increases as the laser output increases. Opportunities also increase. Optical damage may occur due to adhesion of impurities on the laser chip emission surface.
- impurities are known to be organic substances, the inside of the laser package is sealed with a dry inert gas containing a small amount of oxygen in order to prevent the deposition of impurities.
- a technique for stopping is disclosed (see Patent Document 1).
- an organic substance is oxidized with oxygen and decomposed into moisture and carbon dioxide gas, and the generated gas component is adsorbed by an adsorbent disposed in a package.
- organic impurities can be oxidized with oxygen to prevent the impurities from adhering to the laser light emitting surface.
- Patent Document 1 Japanese Patent No. 3452214
- the oxygen is added to the sealing gas of the laser package while excluding moisture, while the reaction between oxygen and organic impurities and the package material force are released hydrogen and Moisture is inevitably generated by this reaction.
- the reaction between oxygen and organic impurities and the package material force are released hydrogen and Moisture is inevitably generated by this reaction.
- At least a photocatalyst having a photocatalytic action and a phosphor that generates excitation light that absorbs laser light and activates the photocatalyst are incorporated in the package.
- An excitation semiconductor laser module is provided. This semiconductor laser module is different from the conventional technology in which oxygen is contained in the sealed gas in the package.
- FIG. 1 is a diagram showing an example of an embodiment of the present invention.
- the present invention can be used not only for communication systems in the field of optical communication but also for application fields of optical transmission such as evaluation and measurement.
- a semiconductor pumping array used for an optical fiber amplifier or an optical fiber laser is used.
- a trace amount of moisture and organic impurities contained in the sealing gas inside the package can be removed, which prevents failures such as optical damage of the laser chip. Therefore, it is possible to manufacture a semiconductor laser module for excitation with high output and high reliability.
- FIG. 1 shows an example of an embodiment of the present invention.
- the laser chip 1 emits laser light from the emission surface when an electric current is supplied from the outside.
- the laser light is coupled to the output fiber 3 by an optical coupling means such as a lens and is output to the outside.
- an optical coupling means such as a lens
- a part of the laser beam is not necessarily output to the outside (usually about 30%) is scattered inside the package 2.
- the light scattered inside the package 2 is absorbed by the phosphor 5, and the phosphor 5 generates fluorescence having a wavelength that activates a photocatalyst different from the laser light wavelength.
- the generated fluorescence is absorbed by the photocatalyst 4, and organic impurities present in a trace amount in the package sealing gas are decomposed by the photocatalytic reaction.
- the reaction product is adsorbed by the adsorbent and removed from the sealing gas.
- Laser chip 1 was a GaAs laser chip with an oscillation wavelength of 980 nm.
- the phosphor 5 using Yb (Itsuterubiu beam) and Tm (thulium) trace (total of about 0.8 wt 0/0) the added yttrium oxide-based ceramics are infrared visible conversion phosphor.
- a WO—TiO-based catalyst that can generate a catalytic function even by irradiation with visible light was used.
- the concentration of WO was about 3% by weight. Phosphor and light
- the catalyst body was in the shape of a chip having a size of about 3 mm square and a thickness of about 0.5 mm.
- the knocker was a mini-DIL type, and the chip-like photocatalyst and phosphor were fixed inside the package lid with an inorganic adhesive. After the laser chip assembly was accommodated inside the package, the lid was fixed to the package body by welding.
- the laser light of 980 nm scattered inside the package is absorbed by a coordinated multiphoton absorption process by Yb and Tm ions contained in the phosphor, and the phosphor generates fluorescence around 470 nm. Since photocatalyst 4 contains a WO component, it is around 500 nm.
- the mini-DIL type laser module manufactured as described above was kept in a thermostatic chamber set at a temperature of 70 ° C and continuously operated by supplying current so that the fiber output became 200 mW. Even after 5000 hours, the output remained within 1% of the fluctuation, and no reduction in output was observed. As a result, a semiconductor laser module for excitation having high output and high reliability was obtained by using the present invention.
- Infrared photostimulable phosphor is Ca S (calcium sulphate) with Eu (Yuguchi Pium), Sm (Samarium), Nd (Neodymium) added in small amounts (total 1.2% by weight). Was used. The size was about 3 mm square and the thickness was about 0.5 mm, and it was fixed to the back of the knocker lid.
- a mini-DIL type laser module was produced in the same manner as in Example 1 except that the infrared photostimulable phosphor was irradiated with ultraviolet rays prior to welding the lid to the package body.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Semiconductor Lasers (AREA)
Abstract
Disclosed is a semiconductor laser module for excitation, which is characterized in that at least a photocatalyst body having a photocatalytic activity and a phosphor which absorbs a laser light and generates an excitation light for activating the photocatalyst body are arranged in a package.
Description
明 細 書 Specification
励起用半導体レーザモジュール 技術分野 Semiconductor laser module for excitation technology
[0001] 本発明は、光増幅装置に用いる高出力にして信頼性の高!、励起用半導体レーザ モジュールにおけるレーザパッケージに関する。 The present invention relates to a laser package in a pumping semiconductor laser module that has high output and high reliability used in an optical amplifier.
発明の背景 Background of the Invention
[0002] 光ファイバ増幅器やファイバレーザ等の光励起型の光増幅装置においては、励起光 源として半導体レーザが多く用いられている。中でも、光ネットワーク構築に不可欠な デバイスである Er添カ卩光ファイバ増幅器(EDFA、 Er— Doped Fiber Amplifier) では、波長 980および 1480nm帯の半導体レーザが励起光源として用いられている 。 EDFAは、光ネットワーク及び回路の進化に伴って高出力化される傾向があるが、 そのため、励起用半導体レーザも高出力化されており、特に、 980nm帯の励起レー ザで著しい。 In optically pumped optical amplifiers such as optical fiber amplifiers and fiber lasers, semiconductor lasers are often used as pumping light sources. In particular, Er-doped fiber amplifiers (EDFAs), which are indispensable devices for optical network construction, use semiconductor lasers with wavelengths of 980 and 1480 nm as pumping light sources. EDFAs tend to increase in output with the evolution of optical networks and circuits. For this reason, pumping semiconductor lasers have also increased in output, especially in the 980 nm band.
[0003] 光ネットワークで使われる EDF Aの励起用レーザは、単一モード発振するレーザが 一般に用いられるが、レーザ出力の増大に対して、エネルギー密度も高くなることか らレーザチップにおける光損傷の機会も増大する。光損傷は、レーザチップ出射面 における不純物の付着等によって発生する場合がある。レーザパッケージ内におい て、このような不純物は、有機物由来の物質であることが知られていることから、不純 物付着を防止するために、レーザパッケージ内部を酸素を微量含む乾燥不活性ガス で封止する技術が開示されている (特許文献 1参照)。 [0003] The EDF A excitation laser used in the optical network is generally a single-mode laser, but the energy density increases as the laser output increases. Opportunities also increase. Optical damage may occur due to adhesion of impurities on the laser chip emission surface. In the laser package, since such impurities are known to be organic substances, the inside of the laser package is sealed with a dry inert gas containing a small amount of oxygen in order to prevent the deposition of impurities. A technique for stopping is disclosed (see Patent Document 1).
[0004] 本技術は、酸素によって有機物を酸ィ匕して水分と炭酸ガスに分解し、生成したガス成 分はパッケージ内に配置した吸着剤で吸着するというものである。このように、有機物 不純物を酸素によって酸ィヒ分解してしまうことによりレーザ光出射面における不純物 の付着を防止することが出来る。 [0004] In the present technology, an organic substance is oxidized with oxygen and decomposed into moisture and carbon dioxide gas, and the generated gas component is adsorbed by an adsorbent disposed in a package. In this way, organic impurities can be oxidized with oxygen to prevent the impurities from adhering to the laser light emitting surface.
特許文献 1:特許第 3452214号公報 Patent Document 1: Japanese Patent No. 3452214
発明の概要 Summary of the Invention
[0005] 前述した例えば特許第 3452214号公報に記載されている方法は、確かに有機不
純物は分解できるものの、一方で、酸素の存在によってレーザチップが酸ィ匕等の悪 影響を受ける。そのため、酸素による悪影響を防止しつつ、このような機能を発揮さ せるためには、封止ガス成分における酸素濃度の厳密な管理が必要であった。 [0005] The method described in, for example, Japanese Patent No. 3452214 described above is certainly organic. Although pure products can be decomposed, on the other hand, the presence of oxygen causes the laser chip to be adversely affected by oxidation and so on. Therefore, in order to exhibit such a function while preventing the adverse effects of oxygen, it is necessary to strictly control the oxygen concentration in the sealing gas component.
[0006] また、水分は、レーザチップを駆動させるための回路に対して悪影響を及ぼすため、 レーザパッケージ内を乾燥ガスで封入する必要がある。しかし、乾燥ガスで封止した としても封止ガス中の水分を完全に除去することはできず微量な水分が含まれる。ま た、ノ ッケージ材料等力も水素が発生するため、封止ガス中に酸素が含まれると反 応して水分を発生する。この水素の発生を防止するためには、パッケージ自体を高 温で長時間加熱して脱水素化処理する必要があった。 [0006] In addition, since moisture adversely affects the circuit for driving the laser chip, it is necessary to enclose the laser package with a dry gas. However, even if it is sealed with a dry gas, the moisture in the sealing gas cannot be completely removed, and a trace amount of moisture is contained. In addition, since the knocking material isotropic force also generates hydrogen, if oxygen is contained in the sealing gas, moisture is generated in response. In order to prevent the generation of hydrogen, it was necessary to heat the package itself at a high temperature for a long time to perform dehydrogenation treatment.
[0007] このように従来の技術においては、レーザパッケージの封止ガスに対して水分を排除 しつつ酸素添加している力 一方で酸素と有機物不純物との反応やパッケージ材料 力 放出される水素との反応により必然的に水分が発生する。このような酸素の存在 によるチップ等への悪影響や有機物不純物の除去、さらに水分の除去をも同時に行 うためには、パッケージの封止ガスの成分を厳密にコントロールしなければならなかつ た。そのため、パッケージ封止工程が煩雑となる等の問題があった。 As described above, in the conventional technology, the oxygen is added to the sealing gas of the laser package while excluding moisture, while the reaction between oxygen and organic impurities and the package material force are released hydrogen and Moisture is inevitably generated by this reaction. In order to simultaneously remove the adverse effects on the chip and the like due to the presence of oxygen, the removal of organic impurities, and the removal of moisture at the same time, it was necessary to strictly control the component of the package sealing gas. Therefore, there is a problem that the package sealing process becomes complicated.
[0008] 本発明に依れば、パッケージ内に少なくとも、光触媒作用を有する光触媒体と、レ 一ザ光を吸収して該光触媒体を活性化させる励起光を発生する蛍光体とが内装され ていることを特徴とする励起用半導体レーザモジュールが提供される。この半導体レ 一ザモジュールは、パッケージ内の封入ガスに酸素を含有させた従来の技術とは異 なるものである。 [0008] According to the present invention, at least a photocatalyst having a photocatalytic action and a phosphor that generates excitation light that absorbs laser light and activates the photocatalyst are incorporated in the package. An excitation semiconductor laser module is provided. This semiconductor laser module is different from the conventional technology in which oxygen is contained in the sealed gas in the package.
図面の簡単な説明 Brief Description of Drawings
[0009] [図 1]本発明の実施形態の一例を示す図である。 FIG. 1 is a diagram showing an example of an embodiment of the present invention.
詳細な説明 Detailed description
[0010] 本発明は、光通信分野における通信システムはもちろん、評価'測定など光伝送の 応用分野にも利用できるものである。 [0010] The present invention can be used not only for communication systems in the field of optical communication but also for application fields of optical transmission such as evaluation and measurement.
[0011] 本発明によれば、光ファイバ増幅器や光ファイバレーザに用いる半導体励起レー
、て、ノ ッケージ内部の封止ガス中に含まれる微量な水分や有機 物不純物を除去することができ、これによつてレーザチップの光損傷等の故障が防止
できることから、高出力で信頼性の高い励起用半導体レーザモジュールを作製する ことができる。 According to the present invention, a semiconductor pumping array used for an optical fiber amplifier or an optical fiber laser is used. In addition, a trace amount of moisture and organic impurities contained in the sealing gas inside the package can be removed, which prevents failures such as optical damage of the laser chip. Therefore, it is possible to manufacture a semiconductor laser module for excitation with high output and high reliability.
[0012] 図 1に、本発明の実施形態の一例を示す。レーザチップ 1は外部から電流を供給す ると出射面からレーザ光を出射するが、レーザ光はレンズ等の光結合手段によって 出力ファイバ 3に結合されて外部に出力される。このとき、レーザ光は全てが外部に 出力される訳ではなぐ一部(通常は 30%程度)はパッケージ 2内部に散乱される。 FIG. 1 shows an example of an embodiment of the present invention. The laser chip 1 emits laser light from the emission surface when an electric current is supplied from the outside. The laser light is coupled to the output fiber 3 by an optical coupling means such as a lens and is output to the outside. At this time, a part of the laser beam is not necessarily output to the outside (usually about 30%) is scattered inside the package 2.
[0013] パッケージ 2内部に散乱された光は、蛍光体 5に吸収され、蛍光体 5はレーザ光波 長と異なる光触媒を活性化させる波長の蛍光を発生する。発生した蛍光は、光触媒 体 4に吸収され、光触媒反応によりパッケージ封止ガス中に微量に存在する有機物 不純物は分解される。反応生成物は、吸着体により吸着され、封止ガス中より除去さ れる。 The light scattered inside the package 2 is absorbed by the phosphor 5, and the phosphor 5 generates fluorescence having a wavelength that activates a photocatalyst different from the laser light wavelength. The generated fluorescence is absorbed by the photocatalyst 4, and organic impurities present in a trace amount in the package sealing gas are decomposed by the photocatalytic reaction. The reaction product is adsorbed by the adsorbent and removed from the sealing gas.
実施例 1 Example 1
[0014] 以下、本発明を実施例により説明する。ただし、本発明は実施例に限定されるもの ではない。 Hereinafter, the present invention will be described with reference to examples. However, the present invention is not limited to the examples.
[0015] 図 1に基づいて実施した。レーザチップ 1には、発振波長が 980nm帯の GaAs系の レーザチップを用いた。蛍光体 5には、赤外可視変換蛍光体である Yb (イツテルビゥ ム)および Tm (ツリウム)を微量 (合計約 0. 8重量0 /0)添加された酸化イットリウム系セ ラミックスを用いた。光触媒体 4には、可視光照射によっても触媒機能を生じるように した WO— TiO系触媒を用いた。 WOの濃度は約 3重量%とした。蛍光体および光[0015] Based on FIG. Laser chip 1 was a GaAs laser chip with an oscillation wavelength of 980 nm. The phosphor 5, using Yb (Itsuterubiu beam) and Tm (thulium) trace (total of about 0.8 wt 0/0) the added yttrium oxide-based ceramics are infrared visible conversion phosphor. For the photocatalyst 4, a WO—TiO-based catalyst that can generate a catalytic function even by irradiation with visible light was used. The concentration of WO was about 3% by weight. Phosphor and light
3 2 3 3 2 3
触媒体は約 3mm角で厚さが 0. 5mm程度のチップ状とした。ノ ッケージは、ミニ DIL 型であり、チップ状の光触媒体と蛍光体はパッケージ蓋の内側に無機系接着剤で固 定した。レーザチップアセンブリをパッケージ内部に収容した後、蓋をパッケージ本 体に溶接固定した。 The catalyst body was in the shape of a chip having a size of about 3 mm square and a thickness of about 0.5 mm. The knocker was a mini-DIL type, and the chip-like photocatalyst and phosphor were fixed inside the package lid with an inorganic adhesive. After the laser chip assembly was accommodated inside the package, the lid was fixed to the package body by welding.
[0016] パッケージ内部に散乱された 980nmのレーザ光は、蛍光体に含有される Ybおよ び Tmイオンによる協調的な多光子吸収過程により吸収され、蛍光体は 470nm付近 に蛍光を発生する。光触媒体 4は、 WO成分を含有していることから、 500nm付近ま [0016] The laser light of 980 nm scattered inside the package is absorbed by a coordinated multiphoton absorption process by Yb and Tm ions contained in the phosphor, and the phosphor generates fluorescence around 470 nm. Since photocatalyst 4 contains a WO component, it is around 500 nm.
3 Three
で吸収域が広がっており、この波長域においても光触媒機能を発揮する。なお、触 媒機能は、次の反応により発現する。
[0017] TiO +h v → TiO *(e— +h+) In this wavelength range, the photocatalytic function is exhibited. The catalyst function is expressed by the following reaction. [0017] TiO + hv → TiO * (e— + h +)
2 2 twenty two
WO +xe— + xH+→ H WO WO + xe— + xH + → H WO
3 x 3 3 x 3
2H 0+4h+→ O +4H+ 2H 0 + 4h + → O + 4H +
2 2 twenty two
[0018] 上記反応により、パッケージ内部の封止ガス中に含まれる水分が分解されて酸素を 発生する。発生した酸素により、封止ガス中に含まれる微量な有機物不純物は酸ィ匕 分解され、水分と炭酸ガスとなる。即ち、封止ガスに酸素が含有されない乾燥ガスを 用いたとしても微量に残存する水分を除去し、同時に、有機物不純物も除去できる利 点がある。 [0018] By the above reaction, moisture contained in the sealing gas inside the package is decomposed to generate oxygen. Due to the generated oxygen, a trace amount of organic impurities contained in the sealing gas is decomposed into oxygen and becomes moisture and carbon dioxide. That is, even if a dry gas containing no oxygen is used as the sealing gas, there is an advantage that a trace amount of remaining water can be removed and at the same time organic impurities can be removed.
[0019] 上記により作製されたミニ DIL型レーザモジュールに対して、温度 70°Cに設定した 恒温槽内に保持し、ファイバ出力が 200mWとなるよう電流を供給して連続動作させ た。 5000時間経過後も、出力は、 1%程度以内の変動であり、出力の低減も認めら れな力つた。この結果により、本発明を用いることにより高出力で高い信頼性を有す る励起用半導体レーザモジュールが得られた。 [0019] The mini-DIL type laser module manufactured as described above was kept in a thermostatic chamber set at a temperature of 70 ° C and continuously operated by supplying current so that the fiber output became 200 mW. Even after 5000 hours, the output remained within 1% of the fluctuation, and no reduction in output was observed. As a result, a semiconductor laser module for excitation having high output and high reliability was obtained by using the present invention.
[0020] このように、封止ガス中に酸素を含有させる必要がなぐ従って成分の厳密なコント ロールが必要でない上に、封止ガス中に含まれる微量の水分力 酸素が発生するた め、封止ガス中に含まれる水分と有機物不純物の除去を同時に行うことができる利点 がある。なお、水素や炭酸ガスは、必要に応じて吸着剤を設置することにより吸着さ せることによって封止ガス中から除去することも可能である。また、本実施例では、蛍 光体に Yb、 Tm添カ卩のセラミックスを用いている力 これに限定されるものではなぐ 光触媒を活性化させる光を発する組成であればょ ヽ。 [0020] As described above, it is not necessary to contain oxygen in the sealing gas. Therefore, strict control of the components is not necessary, and a very small amount of water and oxygen contained in the sealing gas is generated. There is an advantage that moisture and organic impurities contained in the sealing gas can be removed simultaneously. Hydrogen and carbon dioxide gas can be removed from the sealing gas by adsorbing them by installing an adsorbent as necessary. Further, in this embodiment, the force using Yb and Tm-added ceramics as the phosphor is not limited to this, and any composition that emits light that activates the photocatalyst can be used.
実施例 2 Example 2
[0021] 蛍光体に赤外輝尽蛍光体を用いた実施例につ!ヽて示す。赤外輝尽蛍光体は、 Ca S (硫ィ匕カルシウム)に Eu (ユウ口ピウム)、 Sm (サマリウム)、 Nd (ネオジム)を微量 (合 計約 1. 2重量%)添カ卩したものを用いた。大きさは約 3mm角で厚さは約 0. 5mmで あり、ノ ッケージ蓋の裏に固定した。赤外輝尽蛍光体には、蓋のパッケージ本体への 溶接に先立って紫外線を照射した他は、実施例 1と同様にしてミニ DIL型レーザモジ ユールを作製した。 [0021] An example using an infrared photostimulable phosphor as a phosphor will be described below. Infrared photostimulable phosphor is Ca S (calcium sulphate) with Eu (Yuguchi Pium), Sm (Samarium), Nd (Neodymium) added in small amounts (total 1.2% by weight). Was used. The size was about 3 mm square and the thickness was about 0.5 mm, and it was fixed to the back of the knocker lid. A mini-DIL type laser module was produced in the same manner as in Example 1 except that the infrared photostimulable phosphor was irradiated with ultraviolet rays prior to welding the lid to the package body.
[0022] 上記レーザモジュールを実施例 1と同様にして試験したところ、 5000時間経過後も
安定に動作することが示された
[0022] The laser module was tested in the same manner as in Example 1. Shown to work stably
Claims
[1] パッケージ内に少なくとも、光触媒作用を有する光触媒体と、レーザ光を吸収して該 光触媒体を活性化させる励起光を発生する蛍光体とが内装されて!ヽることを特徴と する励起用半導体レーザモジュール。 [1] Excitation characterized in that at least a photocatalyst having a photocatalytic action and a phosphor generating excitation light that absorbs laser light and activates the photocatalyst are contained in the package! Semiconductor laser module.
[2] 蛍光体が、赤外可視変換蛍光体もしくは赤外輝尽蛍光体であることを特徴とする請 求項 1記載の励起用半導体レーザモジュール。 [2] The semiconductor laser module for excitation according to claim 1, wherein the phosphor is an infrared-visible conversion phosphor or an infrared photostimulable phosphor.
[3] 光触媒体が、少なくとも WOをその成分とする TiO系光触媒体であることを特徴とす [3] The photocatalyst is a TiO photocatalyst containing at least WO as a component.
3 2 3 2
る請求項 1または 2に記載の励起用半導体レーザモジュール。
The pumping semiconductor laser module according to claim 1 or 2.
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JP2002346394A (en) * | 2001-05-25 | 2002-12-03 | Akiba:Kk | Highly efficient photocatalyst composition, paint and substrate using the same and method for coating object using the same |
JP2003243761A (en) * | 2002-02-19 | 2003-08-29 | Matsushita Electric Ind Co Ltd | Semiconductor package |
JP2004146496A (en) * | 2002-10-23 | 2004-05-20 | Toyoda Gosei Co Ltd | Light-emitting device |
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