WO2007116522A1 - Method of removing diamond coating - Google Patents
Method of removing diamond coating Download PDFInfo
- Publication number
- WO2007116522A1 WO2007116522A1 PCT/JP2006/307588 JP2006307588W WO2007116522A1 WO 2007116522 A1 WO2007116522 A1 WO 2007116522A1 JP 2006307588 W JP2006307588 W JP 2006307588W WO 2007116522 A1 WO2007116522 A1 WO 2007116522A1
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- WO
- WIPO (PCT)
- Prior art keywords
- diamond
- film
- coated
- etching
- diamond film
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/08—Removing material, e.g. by cutting, by hole drilling
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Definitions
- the present invention relates to a method for removing a diamond film, and more particularly to a method for removing a diamond film with as little brazing of the main body as possible.
- Patent Document 1 Japanese Examined Patent Publication No. 59-27753
- Patent Document 2 Patent No. 2519037
- Patent Document 3 Patent No. 3439423
- FIG. 5 (a) shows a diamond-coated curving tool 100, which is an example of a diamond-coated member.
- the figure shows an end mill with the cutting edge omitted, and the tool base material corresponding to the main body is made of cemented carbide, and the diamond coating is applied to the surface of the blade 102 provided with the outer peripheral blade. 104 is coated.
- the diamond-coated cutting tool 100 has a tool diameter of 10 mm, a length (edge length) of the blade portion 102 which is a processing portion is 30 mm, and a film thickness of the diamond film 104 is about 20 m.
- the obtained tool base material 106 As shown in (b) of FIG. 5, while the reduction amount ⁇ D of the blade diameter at the blade base portion is about 30 ⁇ m, the blade diameter reduction at the tip end portion is
- the quantity A D was about 180 / z m.
- the tip of the diamond coated tool 100 was about 180 / z m.
- the temperature of the part was high, the film removal rate was faster, and the diameter size was greatly reduced.
- the hatched area in FIG. 5 (a) represents the diamond film 104
- the hatched area in FIG. 5 (b) is the film removal area from which the diamond film 104 is removed.
- the present invention has been made against the background described above, and an object of the present invention is to make it possible to remove a diamond coating without brazing the main body of the diamond-coated member as much as possible.
- the first invention is a method for removing the diamond coating of a diamond-coated member having a diamond coating coated on the surface of the main body, the main force of the diamond covering member,
- the film is characterized in that the diamond film is removed by applying an ion beam to the film for etching.
- the diamond coating is etched by irradiating an ion beam generated using an inert gas as a loading gas. And the step of
- a third aspect of the present invention in the method of removing a diamond coating according to the second aspect, (a) irradiating the diamond coating with an ion beam generated by using a chemically active gas for diamond as a working gas. It has a first etching step of etching, and (b) a second etching step of switching the working gas to an inert gas to generate an ion beam and irradiating the diamond film to perform etching.
- any one of oxygen, hydrogen and nitrogen is used as the working gas in the first etching step. It is characterized by
- the diamond-coated member is processed by coating the diamond film on at least a processing portion.
- the tool is characterized in that (b) the main body is a tool base made of cemented carbide.
- the ion beam is irradiated to the diamond film to etch, thereby mainly removing the main body of the sputtering film and removing the main force of the diamond film.
- the diamond film can be removed more uniformly than when plasma is used. And since the film can be removed relatively uniformly in this manner, even if the film is completely removed from the diamond film, the influence on the main body is reduced without fear that the main body will be largely corroded. Since the change is suppressed, it becomes possible to reuse the main body as it is or with just a slight modification, and the diamond-coated member can be regenerated inexpensively.
- the etching process is performed by irradiating the diamond film with an ion beam generated by using an inert gas as a working gas, the diamond film is removed by the sputtering phenomenon due to the ion irradiation. It will be done. Therefore, although the film removal rate is reduced, the diamond film is more uniformly removed, and while the film is completely removed, it is possible to minimize the shape change and the dimensional change of the main body. .
- the diamond coating is removed by chemical reactions such as oxidation and nitridation in addition to sputtering due to ion irradiation since the first etching step is performed by etching with a beam. Therefore, after the diamond film is efficiently removed in the first etching step, the working gas is switched to move to the second etching step, thereby completely removing the film of the diamond film while changing the shape and dimensions of the main body. It is possible to suppress the change and the film removal processing time is shortened.
- the first etching step and the second etching step it is only necessary to basically switch the cooking gas, and therefore, while the diamond-coated member is held in the predetermined etching treatment container, the first etching step and the first etching step are carried out. 2Etching process can be performed continuously.
- FIG. 1 is a schematic configuration view illustrating an example of a diamond film deposition apparatus capable of suitably carrying out the method of the present invention.
- FIG. 2 is a view showing an example of a diamond-coated machining tool in which the diamond coating is removed by the apparatus of FIG. 1, (a) is a front view, (b) is a surface portion of the blade coated with the diamond coating. It is an expanded sectional view.
- FIG. 3 A flow chart for explaining the procedure for removing a diamond film using the diamond film removal apparatus shown in FIG.
- FIG. 4 A diagram for explaining the dimensional change of the tool substrate when the diamond film is removed according to the flow chart of FIG. 3. (a) shows the condition before removal and (b) shows the condition after removal. .
- FIG. 5 A diagram for explaining the dimensional change of the tool substrate when the diamond coating is removed by the conventional method.
- A) shows the condition before removing film
- (b) shows the condition after removing film.
- Step S2 First etching process
- Step S3 Second Etching Step
- the present invention is suitably applied to, for example, cutting tools such as end mills, drills, taps and cutting tools, or diamond-coated working tools such as rolling dies, but a diamond-coated semiconductor device coated with a diamond coating. It can be applied to film removal of various diamond coated members, etc.
- a superhard tool material such as cemented carbide is suitably used as a tool base on which a diamond film is coated.
- the surface of the tool substrate can be subjected to a predetermined pretreatment such as roughening treatment or provision of another coating as a base. The same applies to the case of a diamond-coated semiconductor device.
- the diamond-coated member can also be applied when other coatings such as TiN, TiCN, TiAIN and the like are provided at least under the diamond coating which is fine if it is coated.
- a CVD method such as a microwave plasma CVD method, a hot filament CVD method, or a high frequency plasma CVD method is suitably used.
- a CVD method such as a microwave plasma CVD method, a hot filament CVD method, or a high frequency plasma CVD method.
- the film thickness of the diamond film is thinner than 5 m, sufficient action such as abrasion resistance can not be obtained, while if it exceeds 25 ⁇ m, it is not preferable because the film easily peels off.
- the range of m is appropriate, and about 8 to 20 ⁇ m is desirable.
- the ion beam etching should be performed by relatively moving the ion beam gun emitting the ion beam and the diamond covering member as necessary so that the ion beam is uniformly irradiated to the diamond film. Hoped.
- the portions other than the coating area of the diamond film to be etched may be masked with a masking agent such as a photoresist.
- the working gas is a source of ions for generating an ion beam, and the working gas is ionized and irradiated to the diamond film.
- the inert gas of the second invention argon, krypton, xenon and radon are preferably used.
- oxygen, hydrogen and nitrogen are suitably used as the chemically active gas for diamond used in the first etching step of the third invention as in the fourth invention.
- other working It is also possible to use
- ion beam etching is performed using an optically active gas in the first etching step, but in the practice of the first and second aspects of the invention, ion beam etching other than ion beam etching is carried out. It is also possible to roughen the diamond coating using a diamond deposition technique followed by ion beam etching using a working gas such as an inert gas.
- FIG. 1 is a schematic block diagram of a diamond film removal apparatus 10 capable of removing a diamond film according to the method of the present invention using an ion beam etching apparatus, and a diamond coated tool 12 is etched by a chuck 14.
- the rotary table 18 in the processing vessel 16 is disposed concentric with its center line S.
- the diamond-coated tool 12 corresponds to a diamond-coated member, and the figure shows the case of an end mill.
- the tool base 20 made of cemented carbide is a shank 22.
- a blade 24 is provided on the body.
- the blade portion 24 is provided with an outer peripheral blade 26 and a bottom blade 28 as cutting edges, and the surface of the blade portion 24 is coated with a diamond film 30 by a coating apparatus such as a microwave plasma CVD apparatus. .
- the film thickness of the diamond film 30 is in the range of 8 to 20 ⁇ m, and is about 20 ⁇ m in this embodiment.
- FIG. 2 (a) is a front view of the diamond coated tool 12 as seen from the direction perpendicular to the axis
- FIG. 2 (b) is an enlarged view of the surface portion of the blade 24 coated with the diamond coating 30. It is a sectional view.
- the hatched portion in FIG. 2 (a) represents a diamond film 30, which is disposed on the rotary table 18 with the blade 24 coated with the diamond film 30 facing upward.
- the diamond-coated processing tool 12 is a second-hand product in which the diamond coating 30 is worn or damaged due to use, or a defective product produced due to a coating defect of the diamond coating 30 at the time of production.
- the tool base 20 corresponds to the main body, and the blade portion 24 corresponds to the cover portion.
- the diamond film deposition apparatus 10 of FIG. 1 has a pair of ion beams having an ion source.
- the diamond film 30 is etched away by the ion beam emitted from the guns 32a, 32b.
- the working gas supply device 40 is for supplying a working gas (working gas) serving as a source of ions of the ion beam to the ion beam guns 32a and 32b.
- working gas working gas
- two types of oxygen gas and argon gas are switched.
- the ion beam guns 32a and 32b emit oxygen ion beams and argon ion beams according to the type of working gas.
- the inside of the etching processing container 16 is decompressed by a vacuum pump 42.
- the degree of pressure (Pressure) is set to 0.1 lPa, and the acceleration voltage of ions is 3. OkV. It is.
- the ion beam guns 32a and 32b also have a distance of about 200 mm to the diamond coated tool 12.
- the diamond coated tool 12 is applied with a bias of 50 kHz and 500 V by the bias power supply 44.
- the ion source current is 500 mA at one time.
- the rotary table 18 is rotationally driven at a predetermined rotational speed around a center line S by a rotary drive 46 having an electric motor, a reduction gear, etc., and the diamond-coated machining tool 12 is also integrated with the rotary table 18. It is rotated around its axis (rotation) so that the ion beam is irradiated substantially uniformly over the entire circumference of the blade portion 24.
- a vertical moving table 48 is disposed above the rotary table 18, and the ion beam guns 32a and 32b are disposed via two axes of irradiation angle adjusting devices 34a and 34b, respectively, and the diamond coating process is performed.
- the attitude of the ion beam guns 32a and 32b with respect to the fixture 12, that is, the irradiation angle can be adjusted.
- the ion beam guns 32a and 32b are moved closer to and away from the diamond coated processing tool 12 together with the irradiation angle adjusting devices 34a and 34b according to the diameter size and the like of the diamond coated processing tool 12. Is provided.
- the vertical moving table 48 is, for example, a shaft of the diamond-coated machining tool 12 fixed to the rotary table 18 in the vertical direction by an axial moving device 50 having a feed screw which is rotationally driven in both forward and reverse directions by an electric motor. It can be moved linearly in a direction parallel to the heart (center line S).
- the rotary drive unit 46 and the axial movement unit 50 are respectively controlled by an electronic control unit 52 having a microcomputer or the like, and the diamond coated tool 12 is rotationally driven around its axis, and the ion beam gun 32 By moving the a 32 b up and down, the ion beam is irradiated over the entire length of the blade 24 coated with the diamond coating 30.
- the irradiation time of the ion beam is appropriately determined according to the length dimension of the blade portion 24, the film thickness of the diamond film 30, and the like.
- a mask agent such as a photoresist is provided as necessary on portions other than the coating region of the diamond film 30, ie, the shank 22, and etching by ion beam is prevented.
- step S1 of FIG. 3 after the diamond-coated processing tool 12 is placed on the rotary table 18, the inside of the etching processing container 16 is decompressed to, for example, about 0.1 kPa by the vacuum pump 42.
- step S2 the ion beam guns 32a and 32b are moved up and down while rotationally driving the diamond-coated machining tool 12 about the axis by the rotary drive unit 46 and the axial movement unit 50, while oxygen as working gas from the baking gas supply unit 40
- An oxygen ion beam is applied to the diamond film 30 for etching by supplying a gas to the ion beam guns 32a, 32b.
- Oxygen gas is chemically active against diamond, and in addition to the sputtering phenomenon caused by the irradiation of oxygen ions, the diamond film 30 can be efficiently removed by the oxidation reaction, but the diamond film 30 is completely removed.
- the processing is performed for a predetermined time (for example, about 5 hours) which is previously determined so as to end before.
- This step S2 is a first etching step.
- An argon ion beam is formed on the diamond film 30 by performing step S3 and switching the working gas supplied from the working gas supply device 40 to the ion beam guns 32a and 32b to oxygen gas and argon gas as well. Irradiate and etch. Since argon gas is an inert gas, it does not cause a chemical reaction with diamond, but removes the diamond film 30 based on the sputtering phenomenon by irradiation of argon ions. As described above, since the diamond film 30 is removed only based on the sputtering phenomenon, although the film deposition rate is slow, it is possible to uniformly remove the film, and the predetermined time (eg, 3) can completely remove the diamond film 30. Process about time).
- the predetermined time eg, 3
- This step S3 is a second etching step.
- the series of etching processes is completed, and the tool substrate 20 with the diamond film 30 removed is taken out of the etching vessel 16 and, if necessary, after regrinding the outer peripheral blade 26 and the bottom blade 28.
- the diamond coating 30 is coated on the blade portion 24 by a coating apparatus such as a microwave plasma CVD apparatus, thereby being regenerated as a diamond coated processing tool 12.
- etching is performed by irradiating the diamond film 30 with an ion beam, and the sputtering phenomenon is mainly performed, and the force of the diamond film 30 is also removed, so that the microwave plasma is removed. It is possible to uniformly remove the diamond coating 30 compared to the case of using. And since the film can be removed relatively uniformly in this manner, even when the diamond film 30 is completely removed, the influence on the tool substrate 20 that the tool substrate 20 is not likely to be largely corroded is reduced. The small shape change and dimensional change are suppressed, and the tool base 20 can be reused as it is or with only a small amount of handle, and the diamond-coated cover tool 12 can be regenerated inexpensively. it can.
- step S3 since etching is performed by irradiating the diamond film 30 with an argon ion beam generated using argon gas as a working gas, in step S3, the diamond film is formed by sputtering exclusively by irradiation of argon ions. I am afraid that will be removed. Therefore, although the film deposition rate is reduced, the diamond film 30 is uniformly removed, and the shape variation and dimensional change of the tool substrate 20 are minimized while completely removing the diamond film 30. It can be suppressed.
- step S2 oxygen is etched with oxygen ion beam generated using oxygen gas chemically active to diamond as the working gas.
- the diamond coating 30 is removed also by the oxidation reaction. Therefore, after the diamond coating 30 is efficiently removed in this step S2, the working gas is switched to shift to the step S3, and etching is performed with an argon ion beam to completely remove the film of the diamond coating 30 while the tool is being removed. It is possible to suppress the shape change and the dimensional change of the base material 20, and the film removal processing time is shortened. Also, in steps S2 and S3, it is only necessary to switch the working gas. While being held within 16, their steps S2 and S3 can be performed sequentially.
- the film has a tool diameter of 10 mm, a length of the blade 24 (blade length) of 30 mm, and a film of about 20 ⁇ m on the blade 24.
- the thickness of the diamond-coated diamond tool 12 coated with a thick diamond film 30 is subjected to a film removal treatment according to the procedure of FIG. 3 using the above-described diamond film removal apparatus 10 of FIG. Explain the change.
- the etching time by the oxygen ion beam irradiation in step S2 is 5 hours
- the etching time by the argon ion beam irradiation in step S3 is 3 hours.
- the tool base 20 obtained by the film removing treatment with such ion beam has a reduction amount A D of the blade diameter of the blade base portion of about
- the reduction amount A D of the blade diameter at the tip end is about 6 m, which is a decrease compared to the conventional method of Fig. 5
- FIG. 4 (a) is a schematic view of the diamond-coated machining tool 12 with the outer peripheral blade 26 etc. omitted, as in FIG. 5 (a).
- the diamond film is mainly removed by sputtering by irradiating the diamond film with an ion beam for etching, so that the main force of the diamond film is also removed.
- the diamond film can be removed more uniformly than when plasma is used. And since the film can be removed relatively uniformly in this manner, even when the film is completely removed from the diamond film, the effect on the main body which may partially erode the main body partially is reduced, so that the shape change and the size are reduced. The change is suppressed, and the body can be reused as it is or with only a slight hand. That is, the present invention is preferable when the diamond coating of a diamond-coated member such as an end mill, a tap, or a drill is removed and the main body such as tool base material is reused to regenerate the diamond-coated member. Used properly.
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Abstract
As shown in Fig. 3, diamond coating (30) is irradiated with oxide ion beams to thereby efficiently etch the diamond coating (30) by both of sputtering phenomenon and oxidation in step S2. Thereafter, in step S3, irradiation with argon ion beams is carried out to thereby etch the diamond coating (30) by sputtering phenomenon only. In this etching by ion beams, the diamond coating (30) can be removed more uniformly than in the use of microwave plasma, so that the danger of partial grave erosion of tool base material (20) can be avoided. Further, the tool base material (20) as it is or after minor rework can be reutilized, and there can be attained inexpensive reproduction of diamond coating working tool (12).
Description
明 細 書 Specification
ダイヤモンド被膜の脱膜方法 Film removal method of diamond film
技術分野 Technical field
[0001] 本発明はダイヤモンド被膜の脱膜方法に係り、特に、本体をできるだけ疵付けるこ となくダイヤモンド被膜を脱膜する方法に関するものである。 [0001] The present invention relates to a method for removing a diamond film, and more particularly to a method for removing a diamond film with as little brazing of the main body as possible.
背景技術 Background art
[0002] エンドミルやタップ、バイト、転造ダイス等の加工工具、或 、は半導体レーザ、半導 体センサ等の半導体装置において、工具基材等の本体の表面にダイヤモンド被膜 をコーティングして耐摩耗性や表面硬さなどを向上させるようにしたものがある(特許 文献 2参照)。そして、このようなダイヤモンド被覆部材のダイヤモンド被膜が摩耗 したり損傷したりした場合、或 ヽは製造時にコーティング不良などで不良品が発生し た場合に、工具基材ゃ半導体装置などの本体を再使用するため、マイクロ波プラズ マ CVD装置の反応炉内でマイクロ波によりダイヤモンド被覆部材を加熱するとともに 、酸素プラズマによりダイヤモンド被膜を燃焼させて除去 (脱膜)することが提案され ている (特許文献 3参照)。 [0002] In processing tools such as end mills, taps, cutting tools, rolling dies, or semiconductor devices such as semiconductor lasers and semiconductor sensors, the surface of a body such as a tool base is coated with a diamond film to resist wear. There are some which have improved the hardness and surface hardness (see Patent Document 2). And, if the diamond film of such a diamond-coated member is worn or damaged, or if a defective product is generated due to a coating defect or the like at the time of manufacture, the main body of the tool substrate, semiconductor device, etc. For use, it has been proposed to heat the diamond-coated member by microwaves in a reactor of a microwave plasma CVD apparatus and burn off (de-film) the diamond film by oxygen plasma (Patent Document 1) 3).
特許文献 1:特公昭 59 - 27753号公報 Patent Document 1: Japanese Examined Patent Publication No. 59-27753
特許文献 2:特許第 2519037号公報 Patent Document 2: Patent No. 2519037
特許文献 3:特許第 3439423号公報 Patent Document 3: Patent No. 3439423
発明の開示 Disclosure of the invention
発明が解決しょうとする課題 Problem that invention tries to solve
[0003] し力しながら、このような酸素プラズマによるダイヤモンド被膜の脱膜方法では、超 硬合金等にて構成されて ヽる本体まで浸食してしま!ヽ、本体が変形したり径寸法が 減少したりする問題があった。例えば、長尺のダイヤモンド被覆部材においては、温 度分布が不均一になることから脱膜速度がばらつき、総てのダイヤモンド被膜を確実 に脱膜しょうとすると、温度が高くて脱膜速度が早い部分では本体が大きく浸食され る。 [0003] On the other hand, in such a film removal method of a diamond film by oxygen plasma, such a body is made of cemented carbide and the like, and erodes to the main body! There was a problem that the body was deformed or the diameter size was reduced. For example, in the case of a long diamond-coated member, the film deposition rate varies because the temperature distribution becomes uneven, and if it is intended to reliably remove all the diamond coatings, the temperature is high and the film deposition rate is fast. In the part, the body is greatly eroded.
[0004] 図 5の (a)は、ダイヤモンド被覆部材の一例であるダイヤモンド被覆カ卩ェ工具 100を
示す図で、切れ刃を省略したエンドミルであり、本体に相当する工具基材は超硬合 金にて構成されているとともに、外周刃が設けられている刃部 102の表面にはダイヤ モンド被膜 104がコーティングされている。このダイヤモンド被覆カ卩ェ工具 100は、ェ 具直径が 10mm、加工部である刃部 102の長さ(刃長)が 30mmで、ダイヤモンド被 膜 104の膜厚は約 20 mである。そして、このようなダイヤモンド被覆カ卩ェ工具 100 に対して、マイクロ波プラズマ CVD装置を使用して以下の脱膜条件でダイヤモンド被 膜 104の脱膜を行ったところ、得られた工具基材 106は、図 5の (b)に示すように、刃 元部分の刃径の減少量 Δ D は約 30 μ mであるのに対し、先端部分の刃径の減少 [0004] FIG. 5 (a) shows a diamond-coated curving tool 100, which is an example of a diamond-coated member. The figure shows an end mill with the cutting edge omitted, and the tool base material corresponding to the main body is made of cemented carbide, and the diamond coating is applied to the surface of the blade 102 provided with the outer peripheral blade. 104 is coated. The diamond-coated cutting tool 100 has a tool diameter of 10 mm, a length (edge length) of the blade portion 102 which is a processing portion is 30 mm, and a film thickness of the diamond film 104 is about 20 m. Then, when the film deposition of the diamond coating film 104 was performed on such a diamond coated tool 100 under the following film deposition conditions using a microwave plasma CVD apparatus, the obtained tool base material 106 As shown in (b) of FIG. 5, while the reduction amount Δ D of the blade diameter at the blade base portion is about 30 μm, the blade diameter reduction at the tip end portion is
2 2
量 A D は約 180 /z mであった。この場合は、ダイヤモンド被覆カ卩ェ工具 100の先端 The quantity A D was about 180 / z m. In this case, the tip of the diamond coated tool 100
1 1
部分の温度が高くて、脱膜速度が速くなり、径寸法が大きく減少した。図 5(a)の斜線 部はダイヤモンド被膜 104を表しており、図 5(b)の斜線部は、ダイヤモンド被膜 104 を脱膜した脱膜領域である。これ等の図は必ずしも正確な寸法比率で表したもので はなぐ特に (b)の脱膜領域の形状は径寸法の違いを極端に大きくしたものである。 The temperature of the part was high, the film removal rate was faster, and the diameter size was greatly reduced. The hatched area in FIG. 5 (a) represents the diamond film 104, and the hatched area in FIG. 5 (b) is the film removal area from which the diamond film 104 is removed. These figures are not necessarily expressed with the correct dimensional ratio, and in particular, the shape of the film removal area in (b) is an extremely large difference in diameter size.
《脱膜条件》 << Membrane removal condition >>
•酸素プラズマ • Oxygen plasma
•マイクロ波 2. OkW • Microwave 2. Okw
,圧力 5torr , Pressure 5 torr
•温度 850°C • Temperature 850 ° C
[0005] 本発明は以上の事情を背景として為されたもので、その目的とするところは、ダイヤ モンド被覆部材の本体をできるだけ疵付けることなくダイヤモンド被膜を脱膜できるよ うにすることにある。 The present invention has been made against the background described above, and an object of the present invention is to make it possible to remove a diamond coating without brazing the main body of the diamond-coated member as much as possible.
課題を解決するための手段 Means to solve the problem
[0006] かかる目的を達成するために、第 1発明は、本体の表面にダイヤモンド被膜がコー ティングされているダイヤモンド被覆部材のそのダイヤモンド被膜をその本体力も脱 膜する方法であって、前記ダイヤモンド被膜にイオンビームを照射してエッチングす ることにより、そのダイヤモンド被膜を前記本体力ゝら脱膜することを特徴とする。 [0006] In order to achieve the above object, the first invention is a method for removing the diamond coating of a diamond-coated member having a diamond coating coated on the surface of the main body, the main force of the diamond covering member, The film is characterized in that the diamond film is removed by applying an ion beam to the film for etching.
[0007] 第 2発明は、第 1発明のダイヤモンド被膜の脱膜方法において、不活性ガスをヮー キングガスとして生成したイオンビームを前記ダイヤモンド被膜に照射してエッチング
を行う工程を有することを特徴とする。 According to a second aspect of the present invention, in the method of removing a diamond coating according to the first aspect, the diamond coating is etched by irradiating an ion beam generated using an inert gas as a loading gas. And the step of
[0008] 第 3発明は、第 2発明のダイヤモンド被膜の脱膜方法において、 (a)ダイヤモンドに 対して化学的に活性なガスをワーキングガスとして生成したイオンビームを前記ダイ ャモンド被膜に照射してエッチングを行う第 1エッチング工程と、 (b)前記ワーキング ガスを不活性ガスに切り替えてイオンビームを生成し、前記ダイヤモンド被膜に照射 してエッチングを行う第 2エッチング工程と、を有することを特徴とする。 According to a third aspect of the present invention, in the method of removing a diamond coating according to the second aspect, (a) irradiating the diamond coating with an ion beam generated by using a chemically active gas for diamond as a working gas. It has a first etching step of etching, and (b) a second etching step of switching the working gas to an inert gas to generate an ion beam and irradiating the diamond film to perform etching. Do.
[0009] 第 4発明は、第 3発明のダイヤモンド被膜の脱膜方法において、前記第 1エツチン グ工程では、前記ワーキングガスとして酸素、水素、および窒素のうちの何れかのガ スが用いられることを特徴とする。 According to a fourth aspect of the present invention, in the method of removing a diamond coating according to the third aspect, any one of oxygen, hydrogen and nitrogen is used as the working gas in the first etching step. It is characterized by
[0010] 第 5発明は、第 1発明〜第 4発明の何れかのダイヤモンド被膜の脱膜方法において 、 (a)前記ダイヤモンド被覆部材は、少なくとも加工部に前記ダイヤモンド被膜がコー ティングされている加工工具で、(b)前記本体は、超硬合金にて構成されている工具 基材である、ことを特徴とする。 According to a fifth aspect of the present invention, in the method for removing a diamond film according to any one of the first to fourth inventions, (a) the diamond-coated member is processed by coating the diamond film on at least a processing portion. The tool is characterized in that (b) the main body is a tool base made of cemented carbide.
発明の効果 Effect of the invention
[0011] 第 1発明のダイヤモンド被膜の脱膜方法によれば、ダイヤモンド被膜にイオンビー ムを照射してエッチングすることにより、スパッタリング現象をメインにしてダイヤモンド 被膜が本体力も除去されるため、マイクロ波プラズマを用いる場合よりもダイヤモンド 被膜を均一に脱膜できる。そして、このように比較的均一に脱膜できることから、ダイ ャモンド被膜を完全に脱膜する場合でも、本体が部分的に大きく浸食される恐れが なぐ本体への影響が小さくなつて形状変化や寸法変化が抑制されるため、本体をそ のまま或いは僅かに手を加えるだけで再使用できるようになり、ダイヤモンド被覆部 材を安価に再生できる。 According to the method of removing a diamond film of the first aspect of the present invention, the ion beam is irradiated to the diamond film to etch, thereby mainly removing the main body of the sputtering film and removing the main force of the diamond film. The diamond film can be removed more uniformly than when plasma is used. And since the film can be removed relatively uniformly in this manner, even if the film is completely removed from the diamond film, the influence on the main body is reduced without fear that the main body will be largely corroded. Since the change is suppressed, it becomes possible to reuse the main body as it is or with just a slight modification, and the diamond-coated member can be regenerated inexpensively.
[0012] 第 2発明では、不活性ガスをワーキングガスとして生成したイオンビームをダイヤモ ンド被膜に照射してエッチングを行う工程を有するため、その工程では専らイオンの 照射によるスパッタリング現象でダイヤモンド被膜が除去されることになる。したがって 、その脱膜速度は遅くなるものの、ダイヤモンド被膜が更に均一に除去されるようにな り、ダイヤモンド被膜を完全に脱膜しつつ、本体の形状変化や寸法変化を最小限に 抑えることができる。
[0013] 第 3発明では、上記不活性ガスをワーキングガスとして生成したイオンビームでエツ チングを行う第 2エッチング工程に先立って、ダイヤモンドに対して化学的に活性な ガスをワーキングガスとして生成したイオンビームでエッチングを行う第 1エッチングェ 程を有するため、その第 1エッチング工程では、イオンの照射によるスパッタリング現 象に加えて酸化ゃ窒化等の化学反応でもダイヤモンド被膜が除去される。したがつ て、第 1エッチング工程で効率的にダイヤモンド被膜を除去した後、ワーキングガスを 切り替えて第 2エッチング工程へ移行することにより、ダイヤモンド被膜を完全に脱膜 しつつ本体の形状変化や寸法変化を抑制することが可能で、脱膜処理時間が短縮 される。また、第 1エッチング工程および第 2エッチング工程では、基本的にヮーキン グガスを切り替えるだけで良 、ため、ダイヤモンド被覆部材を所定のエッチング処理 容器内に保持したまま、それ等の第 1エッチング工程および第 2エッチング工程を連 続して行うことができる。 In the second aspect of the invention, since the etching process is performed by irradiating the diamond film with an ion beam generated by using an inert gas as a working gas, the diamond film is removed by the sputtering phenomenon due to the ion irradiation. It will be done. Therefore, although the film removal rate is reduced, the diamond film is more uniformly removed, and while the film is completely removed, it is possible to minimize the shape change and the dimensional change of the main body. . In the third invention, prior to the second etching step in which etching is performed with the ion beam generated using the above inert gas as the working gas, ions generated using the gas chemically active as diamond as the working gas In the first etching step, the diamond coating is removed by chemical reactions such as oxidation and nitridation in addition to sputtering due to ion irradiation since the first etching step is performed by etching with a beam. Therefore, after the diamond film is efficiently removed in the first etching step, the working gas is switched to move to the second etching step, thereby completely removing the film of the diamond film while changing the shape and dimensions of the main body. It is possible to suppress the change and the film removal processing time is shortened. Also, in the first etching step and the second etching step, it is only necessary to basically switch the cooking gas, and therefore, while the diamond-coated member is held in the predetermined etching treatment container, the first etching step and the first etching step are carried out. 2Etching process can be performed continuously.
図面の簡単な説明 Brief description of the drawings
[0014] [図 1]本発明方法を好適に実施できるダイヤモンド被膜脱膜装置の一例を説明する 概略構成図である。 FIG. 1 is a schematic configuration view illustrating an example of a diamond film deposition apparatus capable of suitably carrying out the method of the present invention.
[図 2]図 1の装置によってダイヤモンド被膜が脱膜されるダイヤモンド被覆加工工具の 一例を示す図で、 (a)は正面図、 (b)はダイヤモンド被膜がコーティングされた刃部の 表面部分の拡大断面図である。 [FIG. 2] is a view showing an example of a diamond-coated machining tool in which the diamond coating is removed by the apparatus of FIG. 1, (a) is a front view, (b) is a surface portion of the blade coated with the diamond coating. It is an expanded sectional view.
[図 3]図 1のダイヤモンド被膜脱膜装置を用いてダイヤモンド被膜を脱膜する際の手 順を説明するフローチャートである。 [FIG. 3] A flow chart for explaining the procedure for removing a diamond film using the diamond film removal apparatus shown in FIG.
[図 4]図 3のフローチャートに従ってダイヤモンド被膜を脱膜した場合の工具基材の 寸法変化を説明する図で、 (a)は脱膜前の状態、(b)は脱膜後の状態である。 [FIG. 4] A diagram for explaining the dimensional change of the tool substrate when the diamond film is removed according to the flow chart of FIG. 3. (a) shows the condition before removal and (b) shows the condition after removal. .
[図 5]従来方法でダイヤモンド被膜を脱膜した場合の工具基材の寸法変化を説明す る図で、 (a)は脱膜前の状態、(b)は脱膜後の状態である。 [FIG. 5] A diagram for explaining the dimensional change of the tool substrate when the diamond coating is removed by the conventional method. (A) shows the condition before removing film, (b) shows the condition after removing film.
符号の説明 Explanation of sign
[0015] 12 :ダイヤモンド被覆加工工具 (ダイヤモンド被覆部材) 20:工具基材 (本体) [0015] 12: Diamond coated processing tool (diamond coated member) 20: tool base (main body)
24 :刃部 (加工部) 30 :ダイヤモンド被膜 24: Blade part (processed part) 30: Diamond film
ステップ S 2:第 1エッチング工程
ステップ S3:第 2エッチング工程 Step S2: First etching process Step S3: Second Etching Step
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0016] 本発明は、例えばエンドミルやドリル、タップ、バイト等の切削工具、或いは転造ダイ ス等のダイヤモンド被覆加工工具に好適に適用されるが、ダイヤモンド被膜がコーテ イングされたダイヤモンド被覆半導体装置など種々のダイヤモンド被覆部材の脱膜に 適用され得る。 The present invention is suitably applied to, for example, cutting tools such as end mills, drills, taps and cutting tools, or diamond-coated working tools such as rolling dies, but a diamond-coated semiconductor device coated with a diamond coating. It can be applied to film removal of various diamond coated members, etc.
[0017] ダイヤモンド被膜がコーティングされる工具基材としては超硬合金などの超硬質ェ 具材料が好適に用いられる。密着性を高めるために、工具基材の表面に粗面化処 理を施したり、他の被膜を下地として設けたりするなど、所定の前処理を行うことがで きる。ダイヤモンド被覆半導体装置の場合も同様である。 A superhard tool material such as cemented carbide is suitably used as a tool base on which a diamond film is coated. In order to enhance the adhesion, the surface of the tool substrate can be subjected to a predetermined pretreatment such as roughening treatment or provision of another coating as a base. The same applies to the case of a diamond-coated semiconductor device.
[0018] ダイヤモンド被覆部材は、少なくともダイヤモンド被膜がコーティングされておれば 良ぐそのダイヤモンド被膜の下に TiN、 TiCN、 TiAIN等の他の被膜が設けられて いる場合にも適用され得る。 [0018] The diamond-coated member can also be applied when other coatings such as TiN, TiCN, TiAIN and the like are provided at least under the diamond coating which is fine if it is coated.
[0019] ダイヤモンド被膜のコーティングには、マイクロ波プラズマ CVD法やホットフィラメン ト CVD法、高周波プラズマ CVD法等の CVD法が好適に用いられる。ダイヤモンド被 膜の膜厚は、例えば 5 mより薄いと十分な耐摩耗性等の作用が得られない一方、 2 5 μ mを越えると剥離し易くなるなどして好ましくないため、 5〜25 μ mの範囲内が適 当で、 8〜20 μ m程度が望ましい。 For the coating of the diamond film, a CVD method such as a microwave plasma CVD method, a hot filament CVD method, or a high frequency plasma CVD method is suitably used. For example, if the film thickness of the diamond film is thinner than 5 m, sufficient action such as abrasion resistance can not be obtained, while if it exceeds 25 μm, it is not preferable because the film easily peels off. The range of m is appropriate, and about 8 to 20 μm is desirable.
[0020] イオンビームによるエッチングは、ダイヤモンド被膜に対して均一にイオンビームが 照射されるように、必要に応じてそのイオンビームを発射するイオンビームガンとダイ ャモンド被覆部材とを相対移動させて行うことが望まし 、。エッチングを施すべきダイ ャモンド被膜のコーティング領域以外の部分は、フォトレジスト等のマスク剤でマスキ ングしておけば良い。 [0020] The ion beam etching should be performed by relatively moving the ion beam gun emitting the ion beam and the diamond covering member as necessary so that the ion beam is uniformly irradiated to the diamond film. Hoped. The portions other than the coating area of the diamond film to be etched may be masked with a masking agent such as a photoresist.
[0021] ワーキングガスは、イオンビームを生成するイオンの源で、ワーキングガスがイオン ィ匕されてダイヤモンド被膜に照射される。第 2発明の不活性ガスとしては、アルゴンや クリプトン、キセノン、ラドンが好適に用いられる。また、第 3発明の第 1エッチング工程 で用いられるダイヤモンドに対して化学的に活性なガスとしては、第 4発明のように酸 素や水素、窒素が好適に用いられる。第 1発明の実施に際しては、他のワーキングガ
スを使用することも可能である。 [0021] The working gas is a source of ions for generating an ion beam, and the working gas is ionized and irradiated to the diamond film. As the inert gas of the second invention, argon, krypton, xenon and radon are preferably used. In addition, oxygen, hydrogen and nitrogen are suitably used as the chemically active gas for diamond used in the first etching step of the third invention as in the fourth invention. In the implementation of the first invention, other working It is also possible to use
[0022] 第 3発明では、第 1エッチング工程でィ匕学的に活性なガスを用いてイオンビームェ ツチングを行うが、第 1発明や第 2発明の実施に際しては、イオンビームエッチング以 外のダイヤモンド脱膜技術を用いてダイヤモンド被膜を荒取りし、その後に不活性ガ ス等のワーキングガスを用いてイオンビームエッチングを行うことも可能である。 実施例 In the third aspect of the invention, ion beam etching is performed using an optically active gas in the first etching step, but in the practice of the first and second aspects of the invention, ion beam etching other than ion beam etching is carried out. It is also possible to roughen the diamond coating using a diamond deposition technique followed by ion beam etching using a working gas such as an inert gas. Example
[0023] 以下、本発明の実施例を、図面を参照しつつ詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
図 1は、本発明方法に従ってダイヤモンド被膜を脱膜できるダイヤモンド被膜脱膜 装置 10の概略構成図で、イオンビームエッチング装置を利用したものであり、ダイヤ モンド被覆カ卩ェ工具 12はチャック 14によりエッチング処理容器 16内の回転テープ ル 18上に、その中心線 Sと同心に配置される。ダイヤモンド被覆カ卩ェ工具 12はダイ ャモンド被覆部材に相当するもので、図はエンドミルの場合であり、図 2に示すように 、超硬合金にて構成されている工具基材 20にはシャンク 22および刃部 24がー体に 設けられている。刃部 24には、切れ刃として外周刃 26および底刃 28が設けられてい るとともに、その刃部 24の表面にはマイクロ波プラズマ CVD装置などのコーティング 装置によりダイヤモンド被膜 30がコーティングされて 、る。ダイヤモンド被膜 30の膜 厚は 8〜20 μ mの範囲内で、本実施例では約 20 μ mである。 FIG. 1 is a schematic block diagram of a diamond film removal apparatus 10 capable of removing a diamond film according to the method of the present invention using an ion beam etching apparatus, and a diamond coated tool 12 is etched by a chuck 14. The rotary table 18 in the processing vessel 16 is disposed concentric with its center line S. The diamond-coated tool 12 corresponds to a diamond-coated member, and the figure shows the case of an end mill. As shown in FIG. 2, the tool base 20 made of cemented carbide is a shank 22. And a blade 24 is provided on the body. The blade portion 24 is provided with an outer peripheral blade 26 and a bottom blade 28 as cutting edges, and the surface of the blade portion 24 is coated with a diamond film 30 by a coating apparatus such as a microwave plasma CVD apparatus. . The film thickness of the diamond film 30 is in the range of 8 to 20 μm, and is about 20 μm in this embodiment.
[0024] 図 2の (a)は、ダイヤモンド被覆カ卩ェ工具 12を軸心と直角方向から見た正面図で、( b)はダイヤモンド被膜 30がコーティングされた刃部 24の表面部分の拡大断面図で ある。また、図 2(a)の斜線部はダイヤモンド被膜 30を表しており、ダイヤモンド被膜 3 0がコーティングされた刃部 24が上向きになる姿勢で前記回転テーブル 18上に配置 される。このダイヤモンド被覆加工工具 12は、使用によりダイヤモンド被膜 30が摩耗 したり損傷したりした中古品、或いは製造時にダイヤモンド被膜 30のコーティング不 良などによって生じた不良品であり、図 1ではダイヤモンド被覆カ卩ェ工具 12が回転テ 一ブル 18と同心に 1本配置されているだけである力 中心線 Sと平行に複数のダイヤ モンド被覆加工工具 12を配置して同時に脱膜処理を行うことも可能である。工具基 材 20は本体に相当し、刃部 24はカ卩ェ部に相当する。 [0024] FIG. 2 (a) is a front view of the diamond coated tool 12 as seen from the direction perpendicular to the axis, and FIG. 2 (b) is an enlarged view of the surface portion of the blade 24 coated with the diamond coating 30. It is a sectional view. The hatched portion in FIG. 2 (a) represents a diamond film 30, which is disposed on the rotary table 18 with the blade 24 coated with the diamond film 30 facing upward. The diamond-coated processing tool 12 is a second-hand product in which the diamond coating 30 is worn or damaged due to use, or a defective product produced due to a coating defect of the diamond coating 30 at the time of production. For example, it is possible to place a plurality of diamond-coated tools 12 in parallel with the force center line S so that the film removal processing can be performed simultaneously. is there. The tool base 20 corresponds to the main body, and the blade portion 24 corresponds to the cover portion.
[0025] 図 1のダイヤモンド被膜脱膜装置 10は、イオン発生源を有する一対のイオンビーム
ガン 32a、 32bから発射されるイオンビームによりダイヤモンド被膜 30をエッチングし て除去するものである。ワーキングガス供給装置 40は、イオンビームのイオンの源と なるワーキングガス(Working gas)をイオンビームガン 32a、 32bに供給するためのも ので、本実施例では 2種類の酸素ガスおよびアルゴンガスを切り替えて供給できるよ うになつており、イオンビームガン 32a、 32bからはワーキングガスの種類に応じて酸 素イオンビームおよびアルゴンイオンビームが発射される。エッチング処理容器 16内 は真空ポンプ 42によって減圧されるようになっており、本実施例では真空度 (Pressur e)が 0. lPaとされるとともに、イオンの加速電圧(acceleration voltage)は 3. OkVで ある。また、イオンビームガン 32a、 32b力もダイヤモンド被覆カ卩ェ工具 12までの距離 は約 200mmで、そのダイヤモンド被覆カ卩ェ工具 12にはバイアス電源 44により 50k Hz、 500Vの負荷バイアス(Bias)が印加されるようになっており、イオン発生源の電 流値 (Ion source current)は 500mAであつに。 The diamond film deposition apparatus 10 of FIG. 1 has a pair of ion beams having an ion source. The diamond film 30 is etched away by the ion beam emitted from the guns 32a, 32b. The working gas supply device 40 is for supplying a working gas (working gas) serving as a source of ions of the ion beam to the ion beam guns 32a and 32b. In this embodiment, two types of oxygen gas and argon gas are switched. The ion beam guns 32a and 32b emit oxygen ion beams and argon ion beams according to the type of working gas. The inside of the etching processing container 16 is decompressed by a vacuum pump 42. In this embodiment, the degree of pressure (Pressure) is set to 0.1 lPa, and the acceleration voltage of ions is 3. OkV. It is. The ion beam guns 32a and 32b also have a distance of about 200 mm to the diamond coated tool 12. The diamond coated tool 12 is applied with a bias of 50 kHz and 500 V by the bias power supply 44. The ion source current is 500 mA at one time.
[0026] 前記回転テーブル 18は、電動モータや減速機等を有する回転駆動装置 46により 、中心線 Sまわりに所定の回転速度で回転駆動され、ダイヤモンド被覆加工工具 12 も回転テーブル 18と一体的に軸心まわりに回転(自転)させられ、刃部 24の全周に 略均等にイオンビームが照射されるようになっている。また、回転テーブル 18の上方 には上下移動台 48が配設されており、前記イオンビームガン 32a、 32bがそれぞれ 2 軸の照射角度調整装置 34a、 34bを介して配設されており、ダイヤモンド被覆加工ェ 具 12に対するイオンビームガン 32a、 32bの姿勢、すなわち照射角度を調整できるよ うになつている。上下移動台 48にはまた、ダイヤモンド被覆加工工具 12の径寸法等 に応じてイオンビームガン 32a、 32bを照射角度調整装置 34a、 34bと共にダイヤモ ンド被覆加工工具 12に対して接近、離間させる接近離間装置が設けられている。 The rotary table 18 is rotationally driven at a predetermined rotational speed around a center line S by a rotary drive 46 having an electric motor, a reduction gear, etc., and the diamond-coated machining tool 12 is also integrated with the rotary table 18. It is rotated around its axis (rotation) so that the ion beam is irradiated substantially uniformly over the entire circumference of the blade portion 24. In addition, a vertical moving table 48 is disposed above the rotary table 18, and the ion beam guns 32a and 32b are disposed via two axes of irradiation angle adjusting devices 34a and 34b, respectively, and the diamond coating process is performed. The attitude of the ion beam guns 32a and 32b with respect to the fixture 12, that is, the irradiation angle can be adjusted. In the vertical movement table 48, the ion beam guns 32a and 32b are moved closer to and away from the diamond coated processing tool 12 together with the irradiation angle adjusting devices 34a and 34b according to the diameter size and the like of the diamond coated processing tool 12. Is provided.
[0027] 上記上下移動台 48は、例えば電動モータによって正逆両方向へ回転駆動される 送りねじを有する軸方向移動装置 50により上下方向、すなわち回転テーブル 18に 固定されたダイヤモンド被覆加工工具 12の軸心(中心線 S)と平行な方向へ、直線移 動させられるようになつている。そして、マイクロコンピュータ等を有する電子制御装置 52により、回転駆動装置 46および軸方向移動装置 50がそれぞれ制御され、ダイヤ モンド被覆カ卩ェ工具 12が軸心まわりに回転駆動されるとともに、イオンビームガン 32
a、 32bが上下移動させられることにより、ダイヤモンド被膜 30がコーティングされた刃 部 24の全長に亘つてその全周にイオンビームが照射される。イオンビームの照射時 間は、刃部 24の長さ寸法やダイヤモンド被膜 30の膜厚等に応じて適宜定められる。 なお、ダイヤモンド被膜 30のコーティング領域以外の部分、すなわちシャンク 22には 、フォトレジスト等のマスク剤が必要に応じて設けられ、イオンビームによるエッチング が防止される。 The vertical moving table 48 is, for example, a shaft of the diamond-coated machining tool 12 fixed to the rotary table 18 in the vertical direction by an axial moving device 50 having a feed screw which is rotationally driven in both forward and reverse directions by an electric motor. It can be moved linearly in a direction parallel to the heart (center line S). The rotary drive unit 46 and the axial movement unit 50 are respectively controlled by an electronic control unit 52 having a microcomputer or the like, and the diamond coated tool 12 is rotationally driven around its axis, and the ion beam gun 32 By moving the a 32 b up and down, the ion beam is irradiated over the entire length of the blade 24 coated with the diamond coating 30. The irradiation time of the ion beam is appropriately determined according to the length dimension of the blade portion 24, the film thickness of the diamond film 30, and the like. A mask agent such as a photoresist is provided as necessary on portions other than the coating region of the diamond film 30, ie, the shank 22, and etching by ion beam is prevented.
[0028] 次に、このようなダイヤモンド被膜脱膜装置 10を用いてダイヤモンド被膜 30を脱膜 する手順を、図 3のフローチャートに従って説明する。図 3のステップ S1では、ダイヤ モンド被覆加工工具 12を回転テーブル 18上に配置した後、真空ポンプ 42によりェ ツチング処理容器 16内を例えば 0. lPa程度まで減圧する。ステップ S2では、回転 駆動装置 46および軸方向移動装置 50によりダイヤモンド被覆加工工具 12を軸心ま わりに回転駆動しつつイオンビームガン 32a、 32bを上下移動させる一方、ヮーキン グガス供給装置 40からワーキングガスとして酸素ガスをイオンビームガン 32a、 32b に供給することにより、酸素イオンビームをダイヤモンド被膜 30に照射してエッチング する。酸素ガスは、ダイヤモンドに対して化学的に活性で、酸素イオンの照射による スパッタリング現象に加えて酸ィ匕反応によりダイヤモンド被膜 30を効率的に除去でき るが、ダイヤモンド被膜 30が完全に除去される前に終了するように予め定められた所 定の時間(例えば 5時間程度)だけ処理を行う。このステップ S2は、第 1エッチングェ 程である。 Next, a procedure for removing the diamond film 30 by using such a diamond film removal apparatus 10 will be described according to the flowchart of FIG. In step S1 of FIG. 3, after the diamond-coated processing tool 12 is placed on the rotary table 18, the inside of the etching processing container 16 is decompressed to, for example, about 0.1 kPa by the vacuum pump 42. In step S2, the ion beam guns 32a and 32b are moved up and down while rotationally driving the diamond-coated machining tool 12 about the axis by the rotary drive unit 46 and the axial movement unit 50, while oxygen as working gas from the baking gas supply unit 40 An oxygen ion beam is applied to the diamond film 30 for etching by supplying a gas to the ion beam guns 32a, 32b. Oxygen gas is chemically active against diamond, and in addition to the sputtering phenomenon caused by the irradiation of oxygen ions, the diamond film 30 can be efficiently removed by the oxidation reaction, but the diamond film 30 is completely removed. The processing is performed for a predetermined time (for example, about 5 hours) which is previously determined so as to end before. This step S2 is a first etching step.
[0029] 続!、て、ステップ S3を実行し、ワーキングガス供給装置 40からイオンビームガン 32 a、 32bに供給するワーキングガスを酸素ガス力もアルゴンガスに切り替えることにより 、アルゴンイオンビームをダイヤモンド被膜 30に照射してエッチングする。アルゴンガ スは不活性ガスであるため、ダイヤモンドと化学反応を起こすことはなぐ専らアルゴ ンイオンの照射によるスパッタリング現象に基づ 、てダイヤモンド被膜 30を除去する 。このようにスパッタリング現象のみに基づいてダイヤモンド被膜 30を除去することか ら、脱膜速度は遅いものの均一に脱膜することが可能で、ダイヤモンド被膜 30を完 全に除去できる所定の時間(例えば 3時間程度)だけ処理を行う。このステップ S3は 、第 2エッチング工程である。
[0030] これにより一連のエッチング処理は終了し、ダイヤモンド被膜 30が脱膜された工具 基材 20はエッチング処理容器 16から取り出され、必要に応じて外周刃 26や底刃 28 を再研削した後、マイクロ波プラズマ CVD装置などのコーティング装置により刃部 24 にダイヤモンド被膜 30がコーティングされることにより、ダイヤモンド被覆加工工具 12 として再生される。 [0029] An argon ion beam is formed on the diamond film 30 by performing step S3 and switching the working gas supplied from the working gas supply device 40 to the ion beam guns 32a and 32b to oxygen gas and argon gas as well. Irradiate and etch. Since argon gas is an inert gas, it does not cause a chemical reaction with diamond, but removes the diamond film 30 based on the sputtering phenomenon by irradiation of argon ions. As described above, since the diamond film 30 is removed only based on the sputtering phenomenon, although the film deposition rate is slow, it is possible to uniformly remove the film, and the predetermined time (eg, 3) can completely remove the diamond film 30. Process about time). This step S3 is a second etching step. Thus, the series of etching processes is completed, and the tool substrate 20 with the diamond film 30 removed is taken out of the etching vessel 16 and, if necessary, after regrinding the outer peripheral blade 26 and the bottom blade 28. The diamond coating 30 is coated on the blade portion 24 by a coating apparatus such as a microwave plasma CVD apparatus, thereby being regenerated as a diamond coated processing tool 12.
[0031] ここで、本実施例では、ダイヤモンド被膜 30にイオンビームを照射してエッチングを 行うことにより、スパッタリング現象をメインにしてダイヤモンド被膜 30が工具基材 20 力も除去されるため、マイクロ波プラズマを用いる場合よりもダイヤモンド被膜 30を均 一に脱膜できる。そして、このように比較的均一に脱膜できることから、ダイヤモンド被 膜 30を完全に脱膜する場合でも、工具基材 20が部分的に大きく浸食される恐れが なぐ工具基材 20への影響が小さくなつて形状変化や寸法変化が抑制され、そのェ 具基材 20をそのまま或いは僅か〖こ手をカ卩えるだけで再使用できるようになり、ダイヤ モンド被覆カ卩ェ工具 12を安価に再生できる。 Here, in the present embodiment, etching is performed by irradiating the diamond film 30 with an ion beam, and the sputtering phenomenon is mainly performed, and the force of the diamond film 30 is also removed, so that the microwave plasma is removed. It is possible to uniformly remove the diamond coating 30 compared to the case of using. And since the film can be removed relatively uniformly in this manner, even when the diamond film 30 is completely removed, the influence on the tool substrate 20 that the tool substrate 20 is not likely to be largely corroded is reduced. The small shape change and dimensional change are suppressed, and the tool base 20 can be reused as it is or with only a small amount of handle, and the diamond-coated cover tool 12 can be regenerated inexpensively. it can.
[0032] また、ステップ S3では、アルゴンガスをワーキングガスとして生成したアルゴンイオン ビームをダイヤモンド被膜 30に照射してエッチングを行うため、そのステップ S3では 、専らアルゴンイオンの照射によるスパッタリング現象でダイヤモンド被膜 30が除去さ れること〖こなる。したがって、脱膜速度は遅くなるものの、ダイヤモンド被膜 30がー層 均一に除去されるようになり、ダイヤモンド被膜 30を完全に脱膜しつつ、工具基材 20 の形状変化や寸法変化を最小限に抑えることができる。 Further, in step S3, since etching is performed by irradiating the diamond film 30 with an argon ion beam generated using argon gas as a working gas, in step S3, the diamond film is formed by sputtering exclusively by irradiation of argon ions. I am afraid that will be removed. Therefore, although the film deposition rate is reduced, the diamond film 30 is uniformly removed, and the shape variation and dimensional change of the tool substrate 20 are minimized while completely removing the diamond film 30. It can be suppressed.
[0033] また、上記ステップ S3に先立って行われるステップ S2では、ダイヤモンドに対して 化学的に活性な酸素ガスをワーキングガスとして生成した酸素イオンビームでエッチ ングを行うため、そのステップ S2では、酸素イオンの照射によるスパッタリング現象に 加えて酸ィ匕反応でもダイヤモンド被膜 30が除去される。したがって、このステップ S2 で効率的にダイヤモンド被膜 30を除去した後、ワーキングガスを切り替えてステップ S3へ移行し、アルゴンイオンビームでエッチングが行われることにより、ダイヤモンド 被膜 30を完全に脱膜しつつ工具基材 20の形状変化や寸法変化を抑制することが 可能で、脱膜処理時間が短縮される。また、ステップ S2および S3ではワーキングガ スを切り替えるだけで良 、ため、ダイヤモンド被覆カ卩ェ工具 12をエッチング処理容器
16内に保持したまま、それ等のステップ S2および S3を連続して行うことができる。 Further, in step S2 performed prior to step S3, oxygen is etched with oxygen ion beam generated using oxygen gas chemically active to diamond as the working gas. In addition to the sputtering phenomenon by ion irradiation, the diamond coating 30 is removed also by the oxidation reaction. Therefore, after the diamond coating 30 is efficiently removed in this step S2, the working gas is switched to shift to the step S3, and etching is performed with an argon ion beam to completely remove the film of the diamond coating 30 while the tool is being removed. It is possible to suppress the shape change and the dimensional change of the base material 20, and the film removal processing time is shortened. Also, in steps S2 and S3, it is only necessary to switch the working gas. While being held within 16, their steps S2 and S3 can be performed sequentially.
[0034] ここで、前記図 5のダイヤモンド被覆カ卩ェ工具 100と同様に工具直径が 10mm、刃 部 24の長さ(刃長)が 30mmで、その刃部 24に約 20 μ mの膜厚でダイヤモンド被膜 30がコーティングされているダイヤモンド被覆カ卩ェ工具 12に対して、前記図 1のダイ ャモンド被膜脱膜装置 10を用いて図 3の手順に従って脱膜処理を行った場合の寸 法変化を説明する。ステップ S2の酸素イオンビームの照射によるエッチング処理時 間は 5時間で、ステップ S3のアルゴンイオンビームの照射によるエッチング処理時間 は 3時間である。そして、このようなイオンビームによる脱膜処理によって得られたェ 具基材 20は、図 4の (b)に示すように、刃元部分の刃径の減少量 A D は約 で Here, as in the case of the diamond-coated cover tool 100 shown in FIG. 5, the film has a tool diameter of 10 mm, a length of the blade 24 (blade length) of 30 mm, and a film of about 20 μm on the blade 24. The thickness of the diamond-coated diamond tool 12 coated with a thick diamond film 30 is subjected to a film removal treatment according to the procedure of FIG. 3 using the above-described diamond film removal apparatus 10 of FIG. Explain the change. The etching time by the oxygen ion beam irradiation in step S2 is 5 hours, and the etching time by the argon ion beam irradiation in step S3 is 3 hours. And, as shown in (b) of FIG. 4, the tool base 20 obtained by the film removing treatment with such ion beam has a reduction amount A D of the blade diameter of the blade base portion of about
2 2
、先端部分の刃径の減少量 A D は約 6 mであり、図 5の従来方法に比較して減少 The reduction amount A D of the blade diameter at the tip end is about 6 m, which is a decrease compared to the conventional method of Fig. 5
1 1
量 A D 、 A D が何れも大幅に減少するとともに、それ等の減少量 A D 、 A Dの差 As the quantities A D and A D both decrease substantially, the difference between their reduction quantities A D and A D
1 2 1 2 も小さくなる。これにより、工具基材 20を再使用する際の外周刃 26等の再研削が不 要か大幅に軽減され、工具基材 20を再使用してダイヤモンド被覆加工工具 12を再 生する際のコストが低減される。なお、図 4の (a)は、図 5の (a)と同様に、外周刃 26等 を省略して示したダイヤモンド被覆加工工具 12の概略図である。 1 2 1 2 also becomes smaller. As a result, regrinding of the peripheral blade 26 or the like when reusing the tool base 20 is unnecessary or significantly reduced, and the cost when reusing the tool base 20 and regenerating the diamond-coated processing tool 12 is reduced. Is reduced. 4 (a) is a schematic view of the diamond-coated machining tool 12 with the outer peripheral blade 26 etc. omitted, as in FIG. 5 (a).
[0035] 以上、本発明の実施例を図面に基づいて詳細に説明したが、これはあくまでも一実 施形態であり、本発明は当業者の知識に基づいて種々の変更,改良を加えた態様 で実施することができる。 Although the embodiment of the present invention has been described in detail based on the drawings, this is merely an embodiment, and the present invention is an embodiment to which various changes and improvements are added based on the knowledge of those skilled in the art. Can be implemented in
産業上の利用可能性 Industrial applicability
[0036] 本発明のダイヤモンド被膜の脱膜方法によれば、ダイヤモンド被膜にイオンビーム を照射してエッチングすることにより、スパッタリング現象をメインにしてダイヤモンド被 膜が本体力も除去されるため、マイクロ波プラズマを用いる場合よりもダイヤモンド被 膜を均一に脱膜できるようになる。そして、このように比較的均一に脱膜できることか ら、ダイヤモンド被膜を完全に脱膜する場合でも、本体が部分的に大きく浸食される 恐れがなぐ本体への影響が小さくなつて形状変化や寸法変化が抑制され、その本 体をそのまま或いは僅かに手をカ卩えるだけで再使用できるようになる。すなわち、ェ ンドミルやタップ、ドリル等のダイヤモンド被覆部材のダイヤモンド被膜を脱膜し、ェ 具基材等の本体を再使用してダイヤモンド被覆部材を再生する場合に、本発明は好
適に利用される。
According to the method of removing a diamond film of the present invention, the diamond film is mainly removed by sputtering by irradiating the diamond film with an ion beam for etching, so that the main force of the diamond film is also removed. The diamond film can be removed more uniformly than when plasma is used. And since the film can be removed relatively uniformly in this manner, even when the film is completely removed from the diamond film, the effect on the main body which may partially erode the main body partially is reduced, so that the shape change and the size are reduced. The change is suppressed, and the body can be reused as it is or with only a slight hand. That is, the present invention is preferable when the diamond coating of a diamond-coated member such as an end mill, a tap, or a drill is removed and the main body such as tool base material is reused to regenerate the diamond-coated member. Used properly.
Claims
[1] 本体の表面にダイヤモンド被膜がコーティングされて 、るダイヤモンド被覆部材の 該ダイヤモンド被膜を該本体力 脱膜する方法であって、 [1] A method for removing the diamond coating of a diamond-coated member, wherein the surface is coated with a diamond coating on the surface of the main body,
前記ダイヤモンド被膜にイオンビームを照射してエッチングすることにより、該ダイヤ モンド被膜を前記本体から脱膜する The diamond film is removed from the main body by etching by irradiating the diamond film with an ion beam.
ことを特徴とするダイヤモンド被膜の脱膜方法。 A method for removing a diamond film, characterized in that
[2] 不活性ガスをワーキングガスとして生成したイオンビームを前記ダイヤモンド被膜に 照射してエッチングを行う工程を有する [2] has a step of irradiating the diamond film with an ion beam generated using an inert gas as a working gas to perform etching
ことを特徴とする請求項 1に記載のダイヤモンド被膜の脱膜方法。 The method for removing a diamond film according to claim 1, wherein the diamond film is removed.
[3] ダイヤモンドに対して化学的に活性なガスをワーキングガスとして生成したイオンビ ームを前記ダイヤモンド被膜に照射してエッチングを行う第 1エッチング工程と、 前記ワーキングガスを不活性ガスに切り替えてイオンビームを生成し、前記ダイヤ モンド被膜に照射してエッチングを行う第 2エッチング工程と、 [3] A first etching step of irradiating the diamond film with an ion beam generated by using a gas chemically active to diamond as a working gas for etching, and switching the working gas to an inert gas to perform ion etching A second etching step of generating a beam and irradiating the diamond film for etching;
を有することを特徴とする請求項 2に記載のダイヤモンド被膜の脱膜方法。 The method according to claim 2, further comprising:
[4] 前記第 1エッチング工程では、前記ワーキングガスとして酸素、水素、および窒素の うちの何れかのガスが用いられる [4] In the first etching step, any one of oxygen, hydrogen, and nitrogen is used as the working gas.
ことを特徴とする請求項 3に記載のダイヤモンド被膜の脱膜方法。 The method for removing a diamond film according to claim 3, characterized in that:
[5] 前記ダイヤモンド被覆部材は、少なくとも加工部に前記ダイヤモンド被膜がコーティ ングされて!/ヽる加工工具で、 [5] The diamond-coated member is coated with the diamond film at least at the processing portion! / With processing tools,
前記本体は、超硬合金にて構成されて!ヽる工具基材である、 The body is made of cemented carbide! It is a tool base that beats,
ことを特徴とする請求項 1〜4の何れか 1項に記載のダイヤモンド被膜の脱膜方法。
The method for removing a diamond film according to any one of claims 1 to 4, characterized in that:
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PCT/JP2006/307588 WO2007116522A1 (en) | 2006-04-10 | 2006-04-10 | Method of removing diamond coating |
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WO (1) | WO2007116522A1 (en) |
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WO2009084552A1 (en) * | 2007-12-27 | 2009-07-09 | Nagata Seiki Co., Ltd. | Blade member, and edge working apparatus for the blade member |
JP2016002603A (en) * | 2014-06-13 | 2016-01-12 | 学校法人 芝浦工業大学 | Film removing method and film removing device |
KR20170013308A (en) * | 2015-04-08 | 2017-02-06 | 신메이와 고교 가부시키가이샤 | Covering material stripping method and stripping device using ion irradiation |
CN112111726A (en) * | 2020-09-30 | 2020-12-22 | 久钻科技(成都)有限公司 | Coating stripping tool for surface coating of inner hole of macroporous mold and using method thereof |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009084552A1 (en) * | 2007-12-27 | 2009-07-09 | Nagata Seiki Co., Ltd. | Blade member, and edge working apparatus for the blade member |
JP2009153877A (en) * | 2007-12-27 | 2009-07-16 | Nagata Seiki Co Ltd | Blade member and processing device for blade edge of blade member |
US8522645B2 (en) | 2007-12-27 | 2013-09-03 | Nagata Seiki Co., Ltd. | Blade member, and edge working apparatus for the blade member |
JP2016002603A (en) * | 2014-06-13 | 2016-01-12 | 学校法人 芝浦工業大学 | Film removing method and film removing device |
KR20170013308A (en) * | 2015-04-08 | 2017-02-06 | 신메이와 고교 가부시키가이샤 | Covering material stripping method and stripping device using ion irradiation |
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EP3168857A4 (en) * | 2015-04-08 | 2017-07-12 | Shinmaywa Industries, Ltd. | Covering material stripping method and stripping device using ion irradiation |
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KR101864877B1 (en) * | 2015-04-08 | 2018-06-07 | 신메이와 고교 가부시키가이샤 | Covering material stripping method and stripping device using ion irradiation |
TWI697026B (en) * | 2015-04-08 | 2020-06-21 | 日商新明和工業股份有限公司 | Membrane stripping method and film stripping device by ion irradiation |
CN112111726A (en) * | 2020-09-30 | 2020-12-22 | 久钻科技(成都)有限公司 | Coating stripping tool for surface coating of inner hole of macroporous mold and using method thereof |
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