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WO2007115509A1 - Élément magnétique logique à couches magnétiques toroïdales multiples, et procédé de traitement logique l'utilisant - Google Patents

Élément magnétique logique à couches magnétiques toroïdales multiples, et procédé de traitement logique l'utilisant Download PDF

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Publication number
WO2007115509A1
WO2007115509A1 PCT/CN2007/001174 CN2007001174W WO2007115509A1 WO 2007115509 A1 WO2007115509 A1 WO 2007115509A1 CN 2007001174 W CN2007001174 W CN 2007001174W WO 2007115509 A1 WO2007115509 A1 WO 2007115509A1
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WIPO (PCT)
Prior art keywords
magnetic
layer
multilayer film
ring
input signal
Prior art date
Application number
PCT/CN2007/001174
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English (en)
French (fr)
Inventor
Xiufeng Han
Zhongming Zeng
Yunan Han
Lixian Jiang
Zilong Peng
Wenshan Zhan
Original Assignee
Institute Of Physics, Chinese Academy Of Sciences
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Application filed by Institute Of Physics, Chinese Academy Of Sciences filed Critical Institute Of Physics, Chinese Academy Of Sciences
Priority to US12/296,812 priority Critical patent/US8236576B2/en
Publication of WO2007115509A1 publication Critical patent/WO2007115509A1/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/155—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements with cylindrical configuration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/16—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/53165—Magnetic memory device

Definitions

  • the present invention relates to a magnetic logic element and a method of operating the same, and more particularly to a magnetic logic element having a toroidal magnetic multilayer film and a logic processing method. Background technique
  • the device can also be a memory device for normal transient electronic output.
  • William C. Black, Jr. and B. Das of Iowa State University in 2000 proposed a magnetic logic based on magnetoresistance effect.
  • the Siemens Research Institute of Germany demonstrated a reconfigurable magnetic logic component through experiments.
  • the Paul Drade Institute in Berlin proposed a simpler way to switch between various logic components (A).
  • the logic core unit is magnetically tunneled.
  • the track structure is formed, and its working mode diagram and sectional structure diagram are respectively shown in FIGS. 1a and b.
  • a single magnetic logic element can represent the following basic logic functions, AND function (AND), or “Function (OR), "NAND” function (NAND) and “or non-function” (NOR).
  • the input signal lines are all disposed on the magnetic multilayer film, and the effective magnetic field acting on the magnetic multilayer film unit is relatively small, so that a large operating current is required, and at the same time, the spatial distribution of the magnetic field is uneven. The adverse effects will be brought about.
  • the geometry of the magnetic multilayer film unit used in the prior art adopts a non-closed structure, such as a square, a rectangle, a circle, an ellipse, etc., and the structure will bring a large retreat in a high density and small size.
  • the object of the present invention is to overcome the problem that the magnetic logic element of the prior art uses a magnetic multilayer film of a non-closed structure, so that the magnetic logic performance of the magnetic logic unit is not uniform and uniform, and a large operating current is required; a closed-type magnetic multilayer film unit for eliminating the demagnetizing field of the magnetic multilayer film itself and reducing shape anisotropy, thereby providing a closed type magnetic multilayer film without demagnetizing field and weak shape anisotropy
  • the logic element is directly driven by the polarization-current and the current-induced Oersted field driving by the polarization current and the spin-transfer switching effect
  • the magnetic layer magnetic moment is reversed to realize a low-power logic operation method.
  • the object of the present invention is achieved by the following technical solutions:
  • the magnetic logic component having the annular magnetic multilayer film provided by the invention comprises depositing a conductive metal layer on the substrate, etching the input signal lines A, B and C, and outputting the signal line 0; or at the input signal line Depositing a conductive metal layer on B, C, etching to obtain an output signal line 0, and depositing a unit having an annular magnetic multilayer film; characterized in that: the unit having the annular magnetic multilayer film is disposed at Input signal lines A, B and C, and output signal line 0, and processed into a closed loop type magnetic multilayer film unit, and then deposit a conductive metal layer on the annular magnetic multilayer film unit, which is obtained by etching The output signal line 0' and the input signal lines A', B' and C'; or a metal conductive layer is deposited on the output signal line 0', and etched into input signal lines A', B' and C'.
  • the closed-ring type magnetic multilayer film unit is disclosed in Chinese Patent Application No. 200510135365.6, 200610111166.9, 200710063352.1, which includes layers of a conventional magnetic multilayer film, and the magnetic
  • the cross section of the multilayer film is a closed rectangular ring or an elliptical ring or other polygonal closed shape, wherein the rectangular inner ring has a width of 10 to 100000 nm, the rectangular outer ring has a width of 20 to 200000 nm, and the ratio of the width to the length of the rectangular inner ring.
  • the operation mode diagram of the magnetic logic element having the annular magnetic multilayer film provided by the present invention is as shown in FIG. 2 or FIG. 5 and FIG. 6, and the magnetic logic element having the annular magnetic multilayer film is logically processed, including the following. Steps:
  • Logic setting Apply a current of the order of milliamperes or less than the magnitude of milliamperes through two input signal lines A, A', B, B', or three input signal lines A, A', B, B , C, C, the same or different values of the current flowing through each input signal line, and all pass through the magnetic multilayer film, respectively assigning "0" and "1" to the magnetic multi-function
  • the layer film unit is directly driven by the polarization current using a closed circular magnetic field generated by the spin transfer torque effect and the current to realize the inversion of the magnetic moment of each magnetic layer, thereby setting the logic of the logic element;
  • This logic operation is performed by activating only two input signal lines ⁇ , ⁇ ⁇ , ⁇ ', or three input signal lines ⁇ , ⁇ ', ⁇ , ⁇ ', C, C'; Input signal lines A, A', B, B, or three input signal lines A, AB, B', C, generate the same magnetic field with the same direction of current, a selected initial state It is flipped to change the output value from "1" to "0", thereby obtaining various logic states, and the magnitude of the magnetoresistance effect of the magnetic multilayer film is used as an output signal.
  • the present invention also provides a magnetic logic element having a toroidal magnetic multilayer film comprising depositing a conductive metal layer on the substrate, etching the input signal lines, B and C, and outputting signal line 0; or at the input Depositing a conductive metal layer on the signal lines, B and C, etching to obtain an output signal line 0, and depositing a unit having a ring-shaped magnetic multilayer film; wherein: the unit having the annular magnetic multilayer film is Provided on the input signal lines A, B and C, and the output signal line 0, and processed into a closed loop type magnetic multilayer film unit, and a metal core disposed at a geometric center position of the closed loop magnetic multilayer film unit, Depositing a conductive metal layer on the metal core-containing annular magnetic multilayer film unit, and etching to obtain an output signal line 0' and input signal lines A', B' and C' ; or at an output signal line 0' Depositing a metal conductive layer on the input signal lines A', B' and C', where
  • the ring-shaped closed type magnetic multilayer film containing the metal core is disclosed in the application of the Chinese Patent Application No. 200510135370.7, 200610011167.3, 200710063352.1, which includes the layers of the conventional magnetic multilayer film, Also included is a metal core located at a geometric center of the annular multilayer film, the magnetic multilayer film having a closed rectangular ring or an elliptical ring or other polygonal closed shape, wherein the rectangular inner ring has a width of 10 to 100,000 nm
  • the width of the rectangular outer ring is 20 ⁇ 200000mn, the ratio of the width of the inner ring to the length is 1: 1 ⁇ 5; the short axis of the inner ring of the ellipse is 10 ⁇ 100000nm, and the ratio of the short axis to the long axis is 1: 1 ⁇ 5, the short axis of the elliptical outer ring is 20 to 200000 nm;
  • the inner side of the polygonal closed ring is 10 to 100000
  • the length of the metal core is higher than the height of the unit having the annular magnetic multilayer film to contact the input signal lines A', B' and C' or one of them.
  • the material of the metal core is a metal material having a small electrical resistivity, and is preferably Au, Ag, Pt, Ta, W, Ti, Cu or Al.
  • the function of the metal core is to apply a current from the outside, and the magnetization state of the magnetic multilayer film is manipulated by the ring magnetic field generated by the current, so that the logical operation of the magnetic multilayer film logic unit can be more conveniently performed.
  • the input signal line C is a function line in this scheme, and since it does not directly pass through the magnetic multilayer film, the current limit allowed to pass is large, which may occur.
  • a strong annular magnetic field makes it easy to control the magnetization state of the ring-closed magnetic multilayer film.
  • the magnetic multilayer film unit has two kinds of numerical outputs (0, and 1), but there are 4 different initial states, two of which are parallel states, and two completely anti-parallel states, so that it can be configured.
  • a variety of different logic states The specific process is divided into two steps. In the first step, current is passed through two or three input lines to set the polarity of the logic element to one of the above four states.
  • the second step is to perform this logical operation by activating only the two input lines (ie A and B) or the three input lines (A, B, and C). It is worth noting that only when two or three input lines pass current, a magnetic field of the same polarity is generated, and a selected initial state is inverted, so that the output value is changed from "1" to "0", thereby obtaining Multiple logical states.
  • the magnetic logic component having the annular magnetic multilayer film performs a logic processing method, and the method comprises the following steps:
  • Logic setting Apply a current of mA or less in milliamperes to the two input signal lines A, A', B, B, or three input signal lines A, A, B, B ', C, C, the value of the current flowing through each input line is the same or different, and passes through the metal core of the ring-closed magnetic multilayer film without passing through the magnetic multilayer film; or two inputs Line A and B pass current through the magnetic multilayer film, and the other input signal line C, also called function line, passes current through the metal core, assigning "0" and "1” to them respectively, thereby turning the logic element Logical setting
  • This logic operation is performed by activating only two input signal lines A, A, B, B', or three input signal lines A, AB, B', C, C;
  • the input signal line ⁇ , ⁇ ', ⁇ , ⁇ ' or three input signal lines ⁇ , ⁇ ', ⁇ , ⁇ ', C, C generate a magnetic field of the same polarity when passing currents in the same direction, a selected
  • the initial state will be flipped, and the output value will be changed from "1" to "0".
  • the polarization current will be directly driven by the closed-loop magnetic field generated by the spin transfer torque effect and the current to realize the magnetic moment of each magnetic layer.
  • the annular magnetic multilayer film or the annular metal core-containing magnetic multilayer film used as the logic unit of the present invention is classified according to the formed material, including a pin-free type and a pinned type.
  • the first core structure of the magnetic multilayer film includes: a lower buffer conductive layer (BL:), a hard magnetic layer (hereinafter referred to as HFM), an intermediate layer (11), a soft magnetic layer (hereinafter referred to as SFM) and upper cover layer (CL).
  • the second core structure of the magnetic multilayer film includes: lower buffer conductive layer (BL), lower hard magnetic layer (HFM1), first intermediate layer (11), soft magnetic layer (SFM), a second intermediate layer (12), an upper hard magnetic layer (HFM2), and an upper cover layer (CL).
  • the hard magnetic layer (HFM), the lower hard magnetic layer (HFM1), and the upper hard magnetic layer (HFM2) material are made of a ferromagnetic material such as Co, Fe, Ni, CoFe, NiFeCo, and have a thickness of 2 to 20 nm;
  • the intermediate layer (1), the first intermediate layer (11), and the second intermediate layer (12) are composed of a metal layer or an insulator barrier layer, wherein the metal layer material is Ti, ⁇ , ⁇ , Cr, Ru, Cu , V or TiC, insulator barrier layer material such as A1 2 0 3 , MgO, TiO, ZnO, (ZnMn)0, CrO, VO, or TiCO, the thickness of the intermediate layer is 0.6 ⁇ 10nm;
  • the soft magnetic layer is composed of a ferromagnetic material having a high spin polarization ratio and a small coercive force, including: Co, Fe, Ni or their metal alloys NiFe, CoFeSiB, NiFeSiB, or non- Crystal Co 10 o -x .
  • the structure includes: a lower buffer conductive layer (BL), an antiferromagnetic pinning layer (AFM), a pinned magnetic layer (FM1), an intermediate layer (1), a free soft magnetic layer (FM2), and an upper cover layer for pinning
  • the second core structure of the magnetic multilayer film comprises: a lower buffer conductive layer (BL), an antiferromagnetic pinning layer (AFM), an artificial antiferromagnetic coupling magnetic layer, an intermediate layer (1), free soft Magnetic layer (FM2) and upper cover layer (CL).
  • the third core structure of the magnetic multilayer film includes: a lower buffer conductive layer (BL), a lower antiferromagnetic pinning layer (AFM1), a pinned magnetic layer (FM1), a first intermediate Layer (11), free soft magnetic layer (FM2), second intermediate layer (12), upper pinned magnetic layer (FM3), upper antiferromagnetic pinning layer (AFM2) and upper cover layer for pinning type
  • the fourth core structure of the magnetic multilayer film comprises: a lower buffer conductive layer (BL), a lower antiferromagnetic pinning layer (AFM1), an artificial antiferromagnetic coupling magnetic layer, a first intermediate layer (11), and free Soft magnetic layer (FM2), 'Second intermediate layer (12), artificial antiferromagnetic coupling magnetic layer, upper antiferromagnetic pinning layer (AFM2) and upper cover layer (CL).
  • the artificial antiferromagnetic coupling magnetic layer is composed of a layer of Ru sandwiched between two layers of pinned magnetic layer (FM1) or free soft magnetic layer (FM2) or upper pinned magnetic layer (FM3).
  • the constituent materials of the antiferromagnetic pinning layer (AFM), the lower antiferromagnetic pinning layer (AFM1) and the upper antiferromagnetic pinning layer (AFM2) include Ir, Fe, Rh, Pt or Pd and Mn.
  • the material of the pinned magnetic layer (FM1), the free soft magnetic layer (FM2), the upper pinned magnetic layer (FM3), and the artificial antiferromagnetic coupling magnetic layer is a ferromagnetic material, a semimetal magnetic material or Magnetic semiconductor material, each magnetic layer has a thickness of 2 ⁇ 10 nm;
  • the ferromagnetic material includes: 3d transition group magnetic metal such as Fe, Co, Ni, etc., ferromagnetic alloy such as Co-Fe, Co-Fe-B, Ni-Fe, Co-Fe-Ni, Gd-Y, Pr, Nd , Sm, Gd, Tb, Dy, Ho, Er and other rare earth metals and ferromagnetic alloys thereof;
  • 3d transition group magnetic metal such as Fe, Co, Ni, etc.
  • ferromagnetic alloy such as Co-Fe, Co-Fe-B, Ni-Fe, Co-Fe-Ni, Gd-Y, Pr, Nd , Sm, Gd, Tb, Dy, Ho, Er and other rare earth metals and ferromagnetic alloys thereof;
  • the semi-metal magnetic material comprises: Fe 3 0 4 , Cr0 2 , Lao. 7 Sr a3 Mn0 3 and Co 2 MnSi, etc.
  • the magnetic semiconductor material comprises: F, Co, Ni, V, Mn doped ZnO, Ti0 2 , Hf0 2 and Sn0 2 also include: Mn-doped GaAs, InAs, GaN and ZnTe;
  • the Ru layer has a thickness of 0.7 to 0.9 nm.
  • the constituent material of the intermediate layer (1), the first intermediate layer (II) and the second intermediate layer (12) is an insulating oxide such as MgO, A1 2 0 3 , A1N, Ta 2 0 5 or Hf0 2 , or
  • the metal material such as Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC has a thickness of 0.6 to 10 nm.
  • the annular closed type magnetic multilayer film unit of the present invention or the annular metal core-containing magnetic multilayer film unit has a lower buffer conductive layer at the bottom of the multilayer film core structure except for the above multilayer film core structure ( BL), and the upper portion of the multilayer film core structure is composed of an upper cover layer (CL);
  • the lower buffer conductive layer (BL) is composed of a metal material, preferably Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu, Al or Si-Al alloy, etc., having a thickness of 2 to 200 nm;
  • the cover layer (CL) is composed of a metal material which is not easily oxidized and has a large electrical resistance, preferably Ta, Cu, Ru, Pt, Ag, Au, Cr or the like or an alloy thereof has a thickness of 2 to 200 nm.
  • the magnetic logic element based on the annular closed type magnetic multilayer film provided by the invention has the advantages that: the magnetic multilayer film unit adopts a ring-closed structure, which can effectively reduce the high demagnetizing field brought about by high density and small size. And shape anisotropy energy, thereby reducing the reversal field of the magnetic free layer, thereby reducing the current and power consumption required for logic operations; In addition, since the input line directly passes through the magnetic multilayer film, the adverse effects due to the uneven spatial distribution of the magnetic field are avoided, which is advantageous for the stability of the working performance of the logic element and the extension of the life of the device.
  • a non-closed structure such as a square, a rectangle, an ellipse or the like is used, which will bring about a large demagnetizing field and shape anisotropy energy at a high density and small size.
  • the use of the annular closed structure of the present invention is advantageous for reducing the demagnetizing field and shape anisotropy energy of the magnetic logic element, thereby reducing the reversal field of the magnetic free layer, thereby reducing the current and work required for logic operation. Consumption.
  • the annular closed structure adopted by the invention is more advantageous for directly driving the magnetic moment of each magnetic layer by using a spin-transformed moment effect and a closed loop magnetic field generated by a current to realize a low-power logic operation operation. .
  • FIGS. 1a and 1b are respectively a working mode diagram and a cross-sectional structural view of a prior art magnetic logic element
  • FIGS. 2a and 2b are magnetic diagrams of the metal-free core rectangular ring-type pinned magnetic multi-layer film of the present invention, respectively.
  • 3a and 3b are respectively a cross-sectional structural view of a magnetic multilayer film unit in a magnetic logic element of a metal-free core ring-type pinned magnetic blank film of the present invention.
  • FIGS. 4a and 4b are respectively cross-sectional structural views of a magnetic multilayer film unit in a magnetic logic element of a metal-free core ring-type pinned magnetic multilayer film of the present invention.
  • Fig. 5 is a view showing the operation of a magnetic logic element of the metal-free core ring-type pin-type magnetic blank film of the present invention.
  • Figure 6 is a schematic view showing the operation of the magnetic logic element of the metal coreless ring-type pinned magnetic multilayer film of the present invention.
  • FIG. 7a and 7b are respectively cross-sectional structural views of a magnetic multilayer film unit in a magnetic logic element including a metal core annular closed type non-pinned magnetic multilayer film of the present invention.
  • Figures 8a and 8b are respectively cross-sectional structural views of a magnetic multilayer film unit in a magnetic logic element of the present invention comprising a metal core annular closed pinned magnetic multilayer film.
  • Figure 9 is a diagram showing the operation of a magnetic logic element of the present invention comprising a metal core annular closed type pinned magnetic multilayer film.
  • Figure 10 is a view showing the operation of a magnetic logic element including a metal core annular closed type pinned magnetic multilayer film of the present invention.
  • HFM hard magnetic layer 1
  • I intermediate layer 2
  • SFM soft magnetic layer 3
  • HFM1 lower hard magnetic layer 11.
  • II is a first intermediate layer 21, a second intermediate layer 22, an upper hard magnetic layer 12 of HFM2, an AFM is an antiferromagnetic pinning layer 4, FM1 is a pinned magnetic layer 5, and FM2 is a free soft magnetic layer 6.
  • AFM1 is the lower antiferromagnetic pinning layer 41
  • FM3 is the upper pinned magnetic layer 7
  • AFM2 is the upper antiferromagnetic pinning layer 42
  • BL the lower buffer conductive layer 8
  • CL is the upper cover layer 9
  • input signal Lines A, B, C and A', B', C', output signal line O'0, MC are metal core 10, substrate 13.
  • a magnetic logic element based on a ring-closed magnetic multilayer film is prepared using a high vacuum magnetron sputtering apparatus and a magnetron sputtering process.
  • a Si ⁇ thick Si0 2 /Si substrate 13 is selected, and the substrate 13 is cleaned by a conventional method.
  • a conductive metal layer Pt having a thickness of 100 nm is sequentially deposited, and then the existing micromachining is applied.
  • the technology that is, first, after being glued, pre-baked, and then exposed on a UV exposure machine according to the pattern of the input signal line and the output signal line, followed by development, fixing, post-baking, and then ion etching
  • the shape of the input and output signal lines is engraved, and finally the glue is removed by immersion to obtain three parallel input signal lines A, B and C, and one output signal line 0; or in three parallel
  • the above-mentioned deposited conductive metal layer Pt is repeated, and an output signal line 0 (shown in FIG. 2a) is formed by using the existing micromachining technique; a thickness of lOnm is sequentially deposited thereon.
  • Ru lower buffer conductive layer 8 Co hard magnetic layer 1 having a thickness of 5 nm, A1 intermediate layer 2 having a thickness of 1 nm, plasma oxidized to A10, Co soft magnetic layer 3 having a thickness of 2 nm, and Ru covered with a thickness of 5 nm Layer 9.
  • the substrate is exposed, then developed, fixed, post-baked, and then the magnetic multilayer film is etched into a ring shape by ion etching, and finally immersed in a de-glue to remove the glue, thereby forming a rectangular closed annular geometry, the inner diameter of the ring It is 200 nm, the outer diameter is 250 nm, and the width is 50 nm.
  • the ratio of the short side of the rectangular ring to the inner width of the long side is 1:1.
  • a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, etc., is deposited to a thickness of 100 nm.
  • Si0 2 insulating layer covering each annular multilayer film Buried and isolated from each other, etched using micromachining techniques in the prior art, that is, first positioned on the focused ion beam device where the annular multilayer film is deposited, followed by focused ion beam etching on Si0 2
  • the insulating layer is etched to expose the annular magnetic multilayer film buried under the insulating layer.
  • a metal conductive layer Cu with a thickness of 100 nm is deposited by a high vacuum magnetron sputtering device.
  • the growth conditions are as described above, and the input signal lines A', B', C, and the output signals are processed by a conventional semiconductor micromachining process.
  • Line 0' that is, first, after being glued, pre-baked, and then exposed on a UV exposure machine, using a photolithographic plate having a pattern to be processed, followed by development, fixing, post-baking, and then magnetically etching the film by ion etching.
  • the upper metal conductive layer is shaped into the shape of the input and output signal lines, and finally degummed with a de-gelling agent to obtain the logic element of the present invention having the annular magnetic multilayer film.
  • the three input signal lines (A, B, and C) pass through the ring-closed magnetic multilayer film unit, and the currents flowing through each input line have the same intensity, and "0" and "1" are respectively assigned to them.
  • the combination of the input signals A, B, and C determines the magnetization direction of each magnetic layer in the magnetic multilayer film, and outputs the magnitude of the magnetoresistance effect of the magnetic multilayer film unit as an output signal from the output signal line.
  • the logic function is implemented in two steps, the first step is to set the logic; the second step is to perform the logic operation.
  • the two basic logic functions—an AND function (AND) and a non-function (OR) are explained.
  • AND function the first step, logic setting: Apply current to the input lines (A, B, and C) so that the magnetization directions of the hard magnetic layer (HFM) 1 and the soft magnetic layer (SFM) 3 are counterclockwise. direction.
  • the logic function is performed. Only when the reverse current (that is, the current that generates a clockwise magnetic field) is simultaneously applied to the input lines A and B, the magnetization direction of the soft magnetic layer (SFM) 3 can be reversed. Switch to clockwise direction.
  • the OR gate performs a similar operation, but at the beginning, the magnetization direction of the hard magnetic layer (HFM) 1 is counterclockwise, and the magnetization direction of the soft magnetic layer (SFM) 3 is clockwise.
  • Switching the magnetization directions of hard magnetic layer (HFM) 1 and soft magnetic layer (SFM) 3 can implement two other basic logic functions, NOT AND (NAND, NAND) or 0101 (; ⁇ 01, or NOT). All of the input signal lines have current to switch the magnetization directions of the hard magnetic layer (HFM) 1 and the soft magnetic layer (SFM) 3.
  • the magnetic field required to switch the magnetization direction of the soft magnetic layer (SFM) 3 is smaller than the magnetic field required to switch the magnetization direction of the hard magnetic layer (HFM) 1, and therefore, the polarities of the upper and lower layers can be switched independently of each other.
  • a second magnetic logic element based on a ring-closed magnetic multilayer film includes an input signal line, an output signal line, and a ring-closed magnetic multilayer film unit.
  • the core structure of the annular closed type magnetic multi-layer unit is: a lower hard magnetic layer (HFM1) 11 composed of 5 nm thick CoFe, and a first intermediate layer (11) 21 composed of a thickness of 2.4 mn Ru. a soft magnetic layer (SFM) 3 composed of 4 nm NiFeSiB, a second intermediate layer (12) 22 composed of 2.2 nm Au, and a 4 nm thick CoFe formed on the second intermediate layer.
  • Upper hard magnetic layer (HFM2) 12 The annular closed type is a circular ring with an inner ring side length of 200 nm and an outer ring side length of 300 nm.
  • the core structure is a double pseudo spin valve structure, and the soft magnetic layer (SFM) 3 has a small coercive force, which may be referred to as a free layer, and its magnetization direction is easily changed.
  • the upper and lower hard magnetic layers (HFM1) 11 and (HFM2) 12 have large coercive force, their magnetization directions are relatively fixed, and their flip fields are the same, which is equivalent to a magnetic layer, so based on this
  • the operational mode of the magnetic logic element of the structure is the same as in the first embodiment.
  • the third process of the magnetic logic element based on the annular closed type magnetic multilayer film of the present invention is the same as that of the first embodiment, and includes: an input signal line, an output signal line, and A ring-closed magnetic multilayer film unit.
  • the core structure of the ring-closed magnetic multilayer film unit is: a pinned magnetic layer composed of an antiferromagnetic pinning layer (AFM) 4 and a 3 nm thick CoFeB composed of an antiferromagnetic material IrMn having a thickness of 10 nm ( FM1)5, an intermediate layer (1)2 consisting of 1.0 nm A1 2 0 3 thickness, a free soft magnetic layer (FM2) 6 having a thickness of 3 run CoFeB.
  • the annular closed type is circular with an inner ring size of 300 mn and an outer ring size of 400 nm.
  • the fourth process of the magnetic logic element based on the annular closed type magnetic multilayer film of the present invention is the same as that of the first embodiment, and includes: an input signal line, an output signal line, and a ring-closed magnetic multilayer film unit.
  • the core structure of the ring-closed magnetic multilayer film unit is: an antiferromagnetic pinning layer (AFM) 4 composed of PtPdMn having a thickness of 12 nm, and an artificial antiferromagnetic coupling magnetic layer CoFe (2 nm) / Ru ( Pinned magnetic layer (FM1)5 consisting of 0.8 nm)/CoFeB (4 nm), an intermediate layer (1)2 with a thickness of 2.0 nm MgO (001), and a free soft magnetic layer consisting of 4 nm CoFeB (FM2) 6.
  • AFM antiferromagnetic pinning layer
  • CoFe 2 nm
  • Ru Pinned magnetic layer (FM1)5 consisting of 0.8 nm)/CoFe
  • the annular closed type is elliptical, and the inner and outer axes of the inner ring are 400 nm and 600 nm, respectively, and the outer and minor axes of the outer ring are 800 nm and 1000 nm, respectively.
  • the mode of operation of the magnetic logic element based on this structure is the same as that of Embodiment 1.
  • Example 5
  • the fifth process of the present invention is the same as the first embodiment of the magnetic logic element based on the annular closed type magnetic multilayer film, and includes the following steps: an input signal line, an output signal line, and a ring-closed magnetic multilayer film unit. .
  • the core structure of the ring-closed magnetic multilayer film unit is:: A lower antiferromagnetic pinning layer (AFM1) 41 composed of PtMn having a thickness of 12 nm, from CoFe(2 nm)/Ru(0.8 nm)/CoFeB a pinned magnetic layer (FM1) 5 composed of (4 nm); a first intermediate layer (11) 21 composed of MgO having a thickness of 1.8 nm; a free soft magnetic layer (FM2) composed of 6 nm thick CoFeB 6; a second intermediate layer (12) 22 composed of 2.0 nm MgO; an upper portion composed of an artificial antiferromagnetically coupled magnetic layer CoFeB (4 nm) / Ru (0.8 nm) / CoFe (4 nm) Pinned magnetic layer (FM3) 7, an upper antiferromagnetic pinning layer (AFM2) 42 composed of 12 nm thick PtMn.
  • a lower antiferromagnetic pinning layer (AFM1) 41 composed
  • the ring-shaped closed type is rectangular, and the long and short sides of the inner rectangle of the ring are 1000 nm and 2000 mn, respectively, and the long and short sides of the outer rectangle of the ring are 1500 nm and 2500 nm, respectively.
  • the magnetic multilayer film structure is referred to as a double barrier layer magnetic tunnel junction, and the free soft magnetic layer (FM2) 6 has a small coercive force, which is called a free layer, and its magnetization direction is easily changed.
  • the pinned magnetic layer (FM1) 5 and the upper pinned magnetic layer (FM3) 7 are pinned by antiferromagnetic PtMn, and the magnetization directions of the two layers are relatively fixed, and their flip fields are the same, equivalent to a layer of magnetic The layer, therefore, the mode of operation of the magnetic logic element based on this structure is the same as in the first embodiment.
  • the sixth magnetic-based logic element based on the ring-closed magnetic multilayer film of the present invention is prepared in the same manner as in the first embodiment except that the ring-shaped closed magnetic multilayer is etched.
  • the film After the film, it is insulated with silicon dioxide, and then the micro-machining technique of the prior art is used, that is, first, the geometric center position of the annular multilayer film is positioned on the focused ion beam device, and then the focused ion beam etching method is used for the Si0.
  • the insulating layer is etched to form a columnar hole of a certain size, and then the metal material is deposited at the hole position by a focused ion beam assisted deposition method to form a metal core 10 of a corresponding size and shape.
  • the structure comprises: an input signal line, an output signal line and a closed annular magnetic multilayer film unit, and a metal core 10 in the middle of the closed loop, wherein the input line number line is connected to the metal core or one of the input signal lines is arranged in the closed loop The middle is connected to the metal core 10.
  • the core structure of the annular magnetic multilayer film is: a FeMn having a thickness of 12 nm constitutes an antiferromagnetic pinning layer (AFM) 4, and a Co 2 MnSi having a thickness of 15 nm is formed thereon as a pinned magnetic layer ( FM1)5, A1N with a thickness of 2.5 nm as the intermediate layer (1)2, and an artificial antiferromagnetically coupled magnetic layer Ni 79 Fe 21 (3 nm) /Ru(0/85 nm) / Ni 79 Fe 21 (3 Nm) A free soft magnetic layer (FM2) 6.
  • AFM2 MnSi having a thickness of 15 nm is formed thereon as a pinned magnetic layer ( FM1)5, A1N with a thickness of 2.5 nm as the intermediate layer (1)2, and an artificial antiferromagnetically coupled magnetic layer Ni 79 Fe 21 (3 nm) /Ru(0/85 nm) / Ni 79 Fe 21 (3 Nm)
  • FM2 free soft magnetic layer
  • the elliptical ring has a minor axis inner diameter of 500 nm, a minor axis outer diameter of 800 nm, a major axis inner diameter of 700 nm, a major axis outer diameter of 100 nm, and a ratio of a minor axis to a major axis inner diameter of the elliptical ring of 1:1.4.
  • the metal core 10 disposed at the geometric center of the annular closed type magnetic multilayer film is an A1 metal core having a short axis of 50 nm and a long axis of 80 nm elliptical shape, the length of which is exposed to the magnetic multilayer film unit, and is connected to the input signal line. A', B, B ⁇ C, C contact.
  • the magnetization state of the magnetic multilayer film does not change; when two lines have an input current at the same time, the magnetization direction of the free soft magnetic layer (FM2) 6 is reversed; When three input lines have current, the magnetization direction of the pinned magnetic layer (FM1) 5 can also be changed.
  • the current limit of the current allowed to pass is large, and a strong annular magnetic field is generated, which is advantageous for logic operation. , which in turn reduces the power consumption of the component.
  • the logic function is implemented in two steps, the first step is to set the logic; the second step is to perform the logic operation.
  • the first step is to set the logic; the second step is to perform the logic operation.
  • the input line passes the current, giving a "0" signal.
  • the magnetization direction of the pinned magnetic layer (FM1) 5 and the free soft magnetic layer (FM2) 6 are counterclockwise. This is the initial state of the AND logic.
  • the output is 0.
  • Other logic functions such as OR (not), NOT AND (NAND, NAND), and NOT OR (NOR, NO) are similar to Embodiment 1.
  • this scheme can also implement the XOR function, in which an input line acts as a function line.
  • an input line acts as a function line.
  • the effective magnetic field generated by the input line on the magnetic multilayer film is large, thereby facilitating the pinned magnetic layer (FM1).
  • the reversal of the magnetization direction. Therefore, the magnetization direction of the pinned magnetic layer (FM1) 5 is also reversed when two other input lines are simultaneously applied.
  • the specific operation process is as follows:
  • the first step is logic setting: input lines C, C' apply current, and at the same time, input lines ⁇ , ⁇ ', ⁇ , ⁇ ' pass current, that is, give "0" signal, at this time, pinned magnetic layer (FM1) 5 and the free soft magnetic layer (FM2) 6 are magnetized in a counterclockwise direction; then input the input lines ⁇ , ⁇ , and B, B' with "1" signal, input lines C, C, nowhere Current, at this time, the magnetization direction of the free soft magnetic layer (FM2) is clockwise, which is the initial state of the XOR logic.
  • the second step the logic process: First, give the input line. , C applies a current signal, when the input lines eight, A, and B, B, the signal makes the output low impedance, that is "0"; when the input lines A, A' and B, B, the signal only When the free soft magnetic layer (FM2) is arranged counterclockwise, the output is high impedance, which is "1”; when the input signal lines A, A' and B' are “1", the output is low impedance. , which is "0".
  • FM2 free soft magnetic layer
  • the magnetic logic element based on the annular closed type core-containing magnetic multilayer film can not only realize more logic functions, but also facilitate the operation of the magnetization state of the multilayer film, thereby reducing the power consumption of the element. . No 7
  • the seventh magnetic closure circuit based on the annular closed type magnetic multilayer film of the present invention has the same specific process as the sixth embodiment, and includes: an input signal line, an output signal line, and a closed ellipse.
  • the core structure of the annular magnetic multilayer film is: an IrMn having a thickness of 10 nm constitutes an antiferromagnetic pinning layer (AFM) 4, a CoFe having a thickness of 4 nm is used as a pinned magnetic layer (FM1) 5, and has a thickness of 2.5.
  • mnMgO constitutes the intermediate layer (1) 2, a free soft magnetic layer (FM2) 6 composed of CoFeB having a thickness of 4 nm.
  • the elliptical ring has an inner minor axis of 200 nm, an inner major axis of 300 nm, an outer minor axis of 400 nm, and an outer major axis of 500 nm.
  • the metal core 10 disposed at the geometric center of the annular closed type magnetic multilayer film is an elliptical Au core having an elliptical shape with a minor axis of 20 nm and a long axis of 30 ran; the length of which exposes the magnetic multilayer film unit, and The input signal lines C, C' are in contact.
  • the eighth magnetic ring-shaped magnetic multilayer film-based magnetic logic element of the present invention has the same specific process as the sixth embodiment, and includes: an input signal line, an output signal line, and a closed ellipse.
  • the core structure of the annular magnetic multilayer film is: - a thickness of 5 nm of Co constitutes a hard magnetic layer (HFM) 1 , a thickness of 2.5 nm MgO constitutes an intermediate layer (1) 2, and a thickness of 2 nm of CoFeB Soft magnetic layer (SFM) 3.
  • the elliptical ring has an inner minor axis of 400 nm, an inner major axis of 500 nm, an outer minor axis of 600 nm, and an outer major axis of 700 nm.
  • the metal core disposed at the geometric center of the annular closed type magnetic multilayer film was an elliptical Au core having an elliptical shape with a minor axis of 40 nm and a long axis of 50 nm. Its length exposes the magnetic multilayer film unit and is connected to the input signal line. , C contact.
  • the ninth magnetic-based logic element based on the ring-closed magnetic multilayer film of the present invention has the same specific process as the sixth embodiment, and includes: an input signal line and an output signal line. And a closed elliptical annular magnetic multilayer film unit and a metal core intermediate the closed elliptical ring.
  • the core structure of the annular magnetic multilayer film is: a thickness of 5 nm of Co constitutes a lower hard magnetic layer (HFM1) 11 , a thickness of 2.5 nm MgO constitutes a first intermediate layer (11) 21, and a thickness of 2 nm A soft magnetic layer (SFM) 3 composed of CoFeB, a second intermediate layer (12) 22 having a thickness of 2.5 nm, and an upper hard magnetic layer (HFM2) 12 having a thickness of 5 mn.
  • the elliptical ring has an inner minor axis of 300 nra, an inner major axis of 800 nm, an outer minor axis of 500 nm, and an outer major axis of 1000 nm.
  • the metal core disposed at the geometric center of the annular closed type magnetic multilayer film is an elliptical Au core having an elliptical shape with a short axis of 30 nm and a long axis of 80 nm; the length of the magnetic multilayer film unit is exposed and input Signal line in, A', B, B, C, C contact.
  • the lower buffer layer 8 of the above embodiments 2-9 is also the same as that of the first embodiment.
  • the mode of operation of the magnetic logic element having the magnetic multilayer film unit of the above embodiments 7-9 is the same as that of the embodiment 6. It should be noted that, in this embodiment, the ring shape may be a square ring, a ring, and a polygonal ring.
  • the magnetic multilayer film in this embodiment may also be other structures as described above.

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Description

技术领域
本发明涉及一种磁逻辑元件及其操作方法， 具体地说是涉及一种具有环状磁性多 层膜的磁逻辑元件及进行逻辑处理方法。 背景技术
自 20世纪 80年代末期 Baibich等人在磁性多层膜系统中观察到巨磁电阻效应以 来，由磁性层 /非磁性层 /磁性层构成的层叠结构体系的研究一直是科研人员普遍关注的 重要课题。 这种具有高磁电阻效应的磁性单元不仅可以广泛应用于磁传感器、 磁记录 读出磁头等领域， 而且可开发出具有抗辐射、 非易失性的磁性随机存取存储器 (MRAM 近年来， 一些研究小组提出， 磁记忆单元也可设计用来进行计算， 即提 出了磁逻辑概念。 逻辑功能的实现通常通过逻辑运算的选择和执行两个步骤， 这种磁 逻辑装置既可成为可编程的逻辑装置， 也可成为通常的瞬态电子输出的记忆装置。 如 2000年依阿华州立大学的 William C. Black, Jr.与 B. Das提出一种基于磁阻效应的磁逻 辑，两年后，.德国西门子研究公司通过实验演示一种可重配置的磁逻辑元件。紧接着， 柏林 Paul Drade研究所提出了一种更简单的方法来实现各种计算元件在不同逻辑状 态之间的切换（A. Ney, C. Pampuch, R. Koc 和 K. Η. Pioog,《自然》第 425卷第 485-487 页）。 其逻辑核心单元由磁性隧道结构成， 其工作模式图和剖面结构图分别如图 la和 b所示， 在这种磁阻元件中虽然只有两种输出数值（0和 1 )， 但却有四种不同的初始 状态， 其中两种为平行状态，两种为反平行状态， 这样就可以配置出不同的逻辑状态。 '这样的一个单个磁逻辑元件可表示以下的基本逻辑函数， "与" 函数 （AND)、 "或" 函数 （OR)、 "与非"函数（NAND)和 "或非"函数 （NOR)。 ·
然而， 现有技术中输入信号线均设置在磁性多层膜之上， 其作用在磁性多层膜单 元上的有效磁场比较小， 因而需要较大的操作电流， 同时， 由于磁场空间分布不均匀 会带来的不利影响。 另外， 现有技术使用的磁性多层膜单元的几何结构均采用非闭合 结构， 如方形、 矩形、 圆形和椭圆形等， 这种结构在高密度小尺寸下将会带来较大的 退磁场和形状各向异性， 从而增大磁性自由层的反转场， 进而增大逻辑元件工作的电 流和功耗； 同时， 在这种图型之中也可能存在涡流磁畴， 这些给逻辑单元的磁电性能 的均勾性和一致性也带来许多不利的影响。 发明内容
本发明的目的在于克服现有磁逻辑元件使用非闭合结构的磁性多层膜， 使得磁逻 辑单元的磁电性能的均匀性和一致性不好， 以及需要较大操作电流的缺陷；'采用环状 闭合型磁性多层膜单元， 来消除磁性多层膜自身的退磁场和减小形状各向异性， 从而 提供一种无退磁场和弱形状各向异性的、 闭合型的磁性多层膜的逻辑元件， 并通过极 化电流禾 !j用自旋转移力失巨效应 (spin torque & spin-transfer switching effect)和电流产生 的闭合环状磁场 (current- induced Oersted field driving )直接驱动， 实现各磁性层磁矩的 翻转， 实现低功耗的逻辑运算操作方法。 本发明的目的是通过如下的技术方案实现的：
本发明提供的具有环状磁性多层膜的磁逻辑元件，包括在衬底上沉积导电金属层， 经刻蚀出输入信号线 A、 B和 C， 以及输出信号线 0; 或在输入信号线 、 B和 C上沉积 一导电金属层， 刻蚀得到输出信号线 0， 和沉积具有环状磁性多层膜的单元； 其特征 在于： 所述的具有环状磁性多层膜的单元是设置在输入信号线 A、 B和 C， 以及输出信 号线 0上， 并加工成闭合环型的磁性多层膜单元， 再在该具有环状磁性多层膜单元上 沉积导电金属层， 经刻蚀得到输出信号线 0' 和输入信号线 A' 、 B ' 及 C ' ； 或在输 出信号线 0' 上沉积金属导电层， 刻蚀成输入信号线 A' 、 B ' 及 C' 。 在上述的技术方案中， 所述的闭合环型的磁性多层膜单元， 如在中国专利申请号 200510135365.6、 200610111166.9、 200710063352.1中所公开， 其包括常规的磁性多层 膜的各层， 且该磁性多层膜的横截面呈闭合的矩形环或者椭圆环或者其它多边形闭合 形状， 其中矩形内环的宽度为 10〜100000nm， 矩形外环的宽度为 20〜200000nm， 矩 形内环的宽度与长度的比值为 1 : 1〜5； 椭圆内环的短轴为 10〜100000nm， 短轴与长 轴的比值为 1 : 1〜5， 椭圆外环的短轴为 20〜200000nm; 多边形闭合环的内边边长为 10〜100000nm， 外边的边长为 20〜200000nm， 闭合环的宽度在 10〜100000nm之间。 本发明提供的具有环状磁性多层膜的磁逻辑元件的工作模式图如图 2或图 5、图 6 所示， 具有环状磁性多层膜的磁逻辑元件进行逻辑处理的方法， 包括以下步骤：
1 )逻辑设定： 施加毫安量级或小于毫安量级强度的电流流过两条输入信号线 A、 A'、 B、 B'， 或三条输入信号线 A、 A'、 B、 B，、 C， C , 每条输入信号线中流过的 电流强度相同或不同的值， 且均穿过磁性多层膜， 分别将 "0"和 " 1 "分配给磁性多 层膜单元，通过极化电流利用自旋转移力矩效应和电流产生的闭合环状磁场直接驱动， 来实现各磁性层磁矩的翻转， 从而把逻辑元件的逻辑设定；
2)逻辑操作：通过只激活两条输入信号线 Α、 Α Β、 Β' , 或三条输入信号线 Α、 Α'、 Β、 Β'、 C， C' 来执行这项逻辑操作； 只有当两条输入信号线 A、 A'、 B、 B， 或三条输入信号线 A、 A B、 B'、 C， 通过相同方向的电流时产生了极性相同的 磁场， 一种选定的初始状态才会被翻转， 使输出值从 " 1 "变" 0"， 从而得到多种逻辑 状态， 并通过磁性多层膜的磁电阻效应的大小作为输出信号。 本发明还提供一种具有环状磁性多层膜的磁逻辑元件， 包括在衬底上沉积导电金 属层， 经刻蚀出的输入信号线 、 B和 C， 以及输出信号线 0; 或在输入信号线 、 B 和 C上沉积一导电金属层， 刻蚀得到输出信号线 0， 和沉积具有环状磁性多层膜的单 元； 其特征在于： 所述的具有环状磁性多层膜的单元是设置在输入信号线 A、 B和 C， 以及输出信号线 0上， 并加工成闭合环型的磁性多层膜单元， 以及在闭合环形的磁性 多层膜单元的几何中心位置设置一金属芯，再在该含金属芯的具有环状磁性多层膜单 元上沉积导电金属层， 经刻蚀得到输出信号线 0' 和输入信号线 A' 、 B ' 及 C' ; 或 在输出信号线 0' 上沉积金属导电层，刻蚀成输入信号线 A' 、 B ' 及 C' ， 其中输入 信号线 A、 A，、 B、 C， C 中至少有一条与所述的金属芯相连接， 该金属芯的 形状与闭合环形的磁性多层膜单元的形状相匹配，其横截面为相应的矩形或椭圆形或 者多边形。 在上述的技术方案中，所述的含有金属芯的环状闭合型磁性多层膜如在中国专利 申请号 200510135370.7、 200610011167.3、 200710063352.1的申请中公开， 其包括常 规的磁性多层膜的各层， 还包括位于该环状多层膜的几何中心位置的一个金属芯， 该 磁性多层膜的横截面呈闭合的矩形环或者椭圆环或者其它多边形闭合形状，其中矩形 内环的宽度为 10〜100000nm， 矩形外环的宽度为 20〜200000mn, 矩形内环的宽度与 长度的比值为 1 : 1〜5； 椭圆内环的短轴为 10〜100000nm， 短轴与长轴的比值为 1 : 1〜5，椭圆外环的短轴为 20〜200000nm;多边形闭合环的内边边长为 10〜100000nm， 外边的边长为 20〜200000nm， 闭合环的宽度在 10〜100000nm之间；还包括位于该闭 合环状多层膜的几何中心位置的一个金属芯，该金属芯的横截面为矩形或椭圆形或多 边形， 其中， 矩形的宽度为 5〜50000nm， 宽度与长度的比值为 1 : 1〜5； 椭圆形的短 轴为 5〜50000nm，椭圆形的短轴与长轴比值为 1 : 1〜5, 多边形金属芯的各边长分别 为 5〜50000nm, 金属芯的形状与闭合形状的磁性多层膜的形状相匹配。 该金属芯的 长度为高于所述的具有环状磁性多层膜的单元高度，以接触到所述的输入信号线 A' 、 B' 及 C' 或其中的一条为宜。 所述的金属芯的材料为电阻率较小的金属材料， 优选 Au、 Ag、 Pt、 Ta、 W、 Ti、 Cu或 Al等。 该金属芯的作用是从外部施加电流， 通过电流产生的环形磁场操控磁性 多层膜的磁化状态， 从而可以更方便的进行磁性多层膜逻辑单元的逻辑操作。 与前述的具有环状磁性多层膜的磁逻辑元件相比，输入信号线 C在此方案中为功 能线， 由于其没有直接穿过磁性多层膜， 允许通过的电流极限较大， 会产生一个较强 的环状磁场， 因此可以方便控制环状闭合型磁性多层膜的磁化状态。 在这种结构中， 磁性多层膜单元有两种数值输出 （0， 和 1 )， 但有 4种不同的初始状态， 其中两种平 行态， 两种完全的反平行状态， 这样可以配置出多种不同的逻辑状态。 具体过程分两 步， 第一步， 让电流流过两条、 或三条输入线， 从而把逻辑元件的极性设定为上述 4 种状态中的某一种。第二步， 则是通过只激活上面两条输入线（即 A和 B)或三条输 入线 （A、 B和 C)来执行这项逻辑操作。 值得注意的是， 只有当两条或三条输入线 通过电流时产生了极性相同的磁场，一种选定的初始状态才会被翻转，使输出值从" 1 " 变 "0"， 从而得到多种逻辑状态。 . 所述的具有环状磁性多层膜的磁逻辑元件进行逻^:处理的方法， 其特征在于： 包 括以下步骤：
1 )逻辑设定： 施加毫安量级或小于毫安量级强度的电流流过两条输入信号线 A、 A'、 B、 B，， 或三条输入信号线 A、 A，、 B、 B'、 C， C， 每条输入线中流过的电流强 度相同或不同的值，且均穿过环状闭合型磁性多层膜的金属芯，而不穿过磁性多层膜； 或两条输入线 A、 B通电流穿过磁性多层膜， 另一条输入信号线 C， 也称为功能线， 通电流穿过金属芯， 分别将 "0"和 "1 "分配给它们， 从而把逻辑元件的逻辑设定；
2)逻辑操作： 通过只激活两条输入信号线 A、 A，、 B、 B'， 或三条输入信号线 A、 A B、 B'、 C， C， 来执亍这项逻辑操作； 只有当两条输入信号线 Α、 Α'、 Β、 Β' 或三条输入信号线 Α、 Α'、 Β、 Β'、 C， C 通过相同方向的电流时产生了极性相同的 磁场， 一种选定的初始状态才会被翻转， 使输出值从 " 1 "变 " 0"， 通过极化电流利用 自旋转移力矩效应和电流产生的闭合环状磁场直接驱动，来实现各磁性层磁矩的翻转， 从而得到多种逻辑状态， 并通过磁性多层膜的磁电阻效应的大小作为输出信号。 本发明所述的用做逻辑单元的环状磁性多层膜或环状含金属芯的磁性多层膜， 按 照形成的材料分类， 包括无钉扎型的和钉扎型的。
对于无钉扎型的， 其磁性多层膜的第一种核心结构包括： 下部缓冲导电层 (BL：)、 硬磁层 (以下简称 HFM)、 中间层 (11)、 软磁层 (以下简称 SFM)和上部覆盖层 (CL)。 • X寸于无钉扎型的， 其磁性多层膜的第二种核心结构包括： 下部缓冲导电层 (BL)、 下部硬磁性层 (HFM1)、 第一中间层 (11)、 软磁层 (SFM)、 第二中间层 (12)、 上部硬磁性 层 (HFM2)和上部覆盖层 (CL)。
所述的硬磁层（HFM)、 下部硬磁性层 (HFM1)、 上部硬磁性层 (HFM2)材料由 Co, Fe， Ni， CoFe, NiFeCo等铁磁材料构成， 厚度为 2〜20 nm;
所述的中间层 （1)、 第一中间层 (11)、 第二中间层 (12)由金属层或者绝缘体势垒层 构成， 其中金属层材料如 Ti， Ζη, ΖηΜη, Cr, Ru, Cu, V或 TiC， 绝缘体势垒层材 料如 A1203， MgO, TiO， ZnO， (ZnMn)0, CrO, VO, 或 TiCO， 中间层的厚度为 0.6~10nm;
所述的软磁层（SFM) 的组成材料为自旋极化率高， 矫顽力较小的铁磁材料， 包 括： Co， Fe, Ni或它们的金属合金 NiFe， CoFeSiB, NiFeSiB, 或非晶 Co10o-x.yFexBy (0<x<100, 0<y < 20), 或 Heusler合金， 如 Co2MnSi， Co2Cra6Fe 4Al; 软磁层材料优 选 Co9oFelc， Co75Fe25, Co40Fe4oB20, 或 Ni79Fe21 ; 所述的软磁层的厚度为 l〜20nm; 对于钉扎型的， 其磁性多层膜的第一种核心结构包括： 下部缓冲导电层 (BL)、 反 铁磁钉扎层 (AFM)、 被钉扎磁性层 (FM1)、 中间层 (1)、 自由软磁层 (FM2)和上部覆盖层 对于钉扎型的， 其磁性多层膜的第二种核心结构包括： 下部缓冲导电层 (BL)、 反 铁磁钉扎层 (AFM)、 人工反铁磁耦合磁性层、 中间层 (1)、 自由软磁层 (FM2) 和上部覆 盖层 (CL)。
对于钉扎型的， 其磁性多层膜的第三种核心结构包括： 下部缓冲导电层 (BL)、 下 部反铁磁钉扎层 (AFM1)、 被钉扎磁性层 (FM1)、 第一中间层 (11)、 自由软磁层 (FM2)、 第二中间层 (12)、 上部被钉扎磁性层 (FM3)、 上部反铁磁钉扎层 (AFM2)和上部覆盖层 对于钉扎型的， 其磁性多层膜的第四种核心结构包括： 下部缓冲导电层 (BL)、 下 部反铁磁钉扎层 (AFM1)、人工反铁磁耦合磁性层、第一中间层 (11)、自由软磁层 (FM2)、 '第二中间层 (12)、 人工反铁磁耦合磁性层、 上部反铁磁钉扎层 (AFM2)和上部覆盖层 (CL)。
所述的人工反铁磁耦合磁性层由两层被钉扎磁性层 （FM1 ) 或自由软磁层（FM2) 或上部被钉扎磁性层 （FM3) 中间夹一层 Ru构成。
所述的反铁磁钉扎层 （AFM)、 下部反铁磁钉扎层 (AFM1)和上部反铁磁钉扎层 (AFM2)的组成材料包括由 Ir、 Fe、 Rh、 Pt或 Pd与 Mn的合金材料制成的、 或 CoO、 MO、 PtCr等反铁磁性材料， 其厚度为 6〜20 nm;
所述的被钉扎磁性层（FM1 )、 自由软磁层 （FM2)、 上部被钉扎磁性层 （FM3 )、 人工反铁磁耦合磁性层的组成材料为铁磁性材料、半金属磁性材料或磁性半导体材料， 各磁性层的厚度均为 2〜10 nm;
所述铁磁性材料包括： Fe、 Co、 Ni等 3d过渡族磁性金属， Co-Fe、 Co-Fe-B、 Ni-Fe、 Co-Fe-Ni、 Gd-Y等铁磁性合金， Pr、 Nd、 Sm、 Gd、 Tb、 Dy、 Ho、 Er等稀土金属及 其铁磁合金；
所述半金属磁性材料包括： Fe304、 Cr02、 Lao.7Sra3Mn03和 Co2MnSi等 Heussler 所述磁性半导体材料包括： F、 Co、 Ni、 V、 Mn掺杂的 ZnO、 Ti02、 Hf02和 Sn02， 也包括： Mn掺杂的 GaAs、 InAs、 GaN和 ZnTe;
所述的 Ru层的厚度为 0.7〜0.9 nm。
所述的中间层（1)、 第一中间层 （II )和第二中间层 (12) 的组成材料为 MgO、 A1203、 A1N、 Ta205或 Hf02等绝缘氧化物， 或金属材料如 Ti, Zn， ZnMn, Cr, Ru, Cu， V或 TiC， 其厚度为 0.6〜10 nm。
本发明的环状闭合型磁性多层膜单元， 或环状含金属芯的磁性多层膜单元除具有 上述多层膜核心结构外， 均在多层膜核心结构的底部有下部缓冲导电层 (BL)， 和多层 膜核心结构的上部有上部覆盖层 (CL)组成； 所述的下部缓冲导电层 (BL)由金属材料组 成，优选 Ta、 Ru、 Cr、 Au、 Ag、 Pt、 Ta、 W、 Ti、 Cu、 Al或 Si-Al合金等， 厚度为 2〜 200nm;所述的覆盖层 (CL)由不易被氧化的且具有较大电阻的金属材料组成，优选 Ta、 Cu、 Ru、 Pt、 Ag、 Au、 Cr等或其合金， 厚度为 2〜200nm。 本发明提供的基于环状闭合型磁性多层膜的磁逻辑元件的优点在于： 磁性多层膜 单元采用环状闭合型结构， 能有效减小高密度小尺寸下带来的较高的退磁场和形状各 向异性能， 从而减小磁性自由层的反转场， 进而降低逻辑操作所需的电流和功耗； 另 外， 由于输入线直接穿过磁性多层膜， 避免了由于磁场空间分布不均匀而带来的不利 影响， 有利于逻辑元件工作性能的稳定和器件寿命的延长。 在现有技术中采用非闭合结构， 如方形、 矩形、 椭圆形等， 这种结构在高密度小 尺寸下将会带来较大的退磁场和形状各向异性能。 而本发明的采用环状闭合型结构有 利于减小这种磁逻辑元件的退磁场和形状各向异性能，从而减小磁性自由层的反转场， 进而降低逻辑操作所需的电流和功耗。 本发明采用的环形闭合状结构更有利于通过极 化电流利用自旋转移力矩效应和电流产生的闭合环状磁场直接驱动， 来实现各磁性层 磁矩的翻转， 实现低功耗的逻辑运算操作。 附图说明
图 la与图 lb分别是现有技术的磁逻辑元件的工作模式图和剖面结构图； 图 2a与图 2b分别是本发明的无金属芯矩形环状闭合型无钉扎磁性多层膜的磁逻 辑元件中的一种工作模式图和剖面结构图；
图 3a与图 3b分别是本发明的无金属芯环状闭合型无钉扎磁性多层膜的磁逻辑元 件中的磁性多层膜单元的一种剖面结构图。
图 4a与图 4b分别是本发明的无金属芯环状闭合型钉扎磁性多层膜的磁逻辑元件 中的磁性多层膜单元的一种剖面结构图。
图 5是本发明的无金属芯环状闭合型无钉扎磁性多层膜的磁逻辑元件的工作模式 图。
图 6是本发明的无金属芯环状闭合型钉扎磁性多层膜的磁逻辑元件的工作模式 图。
图 7a与图 7b分别是本发明的含有金属芯环状闭合型无钉扎磁性多层膜的磁逻辑 元件中的磁性多层膜单元的一种剖面结构图。
图 8a与图 8b分别是本发明的含有金属芯环状闭合型钉扎磁性多层膜的磁逻辑元 件中的磁性多层膜单元的一种剖面结构图。
图 9是本发明的含有金属芯环状闭合型无钉扎磁性多层膜的磁逻辑元件的工作模 式图。
图 10是本发明的含有金属芯环状闭合型钉扎磁性多层膜的磁逻辑元件的工作模 式图。
其中， HFM为硬磁层 1、 I为中间层 2、 SFM为软磁层 3， HFM1为下部硬磁性层 11、 II为第一中间层 21、 12第二中间层 22、 HFM2上部硬磁性层 12， AFM为反铁磁 钉扎层 4、 FM1为被钉扎磁性层 5、 FM2为自由软磁层 6， AFM1为下部反铁磁钉扎层 41、 FM3为上部被钉扎磁性层 7、 AFM2为上部反铁磁钉扎层 42， BL为下部缓冲导 电层 8， CL为上部覆盖层 9， 输入信号线 A、 B、 C以及 A'、 B'、 C'， 输出信号线 O' 0， MC为金属芯 10， 衬底 13。 具体实施方式
实施例 1
下面结合制备方法和附图对本发明的第一种基于环状闭合型磁性多层膜的磁逻辑 元件的结构来详细地进行说明：
参考图 2a、 图 2b和图 3a所示， 利用高真空磁控溅射设备和磁控溅射工艺， 制备 第一种基于环状闭合型磁性多层膜的磁逻辑元件。首先选择 Ιιηπι厚的 Si02/Si衬底 13， 将衬底 13经过常规方法清洗， 在清洗干净的衬底 13上， 依次沉积厚度为 lOOnm的导 电金属层 Pt， 然后釆用现有的微加工技术， 即首先经过涂胶、 前烘， 再在紫外曝光机 上， 根据所需的输入信号线和输出信号线的图形对片基进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把输入和输出信号线的形状刻出， 最后用去胶剂浸泡进行 去胶， 即得到 3条平行设置的输入信号线 A、 B和 C， 以及一条输出信号线 0; 或者在 3条平行的输入信号线 A、 B和 C上， 再重复上述沉积导电金属层 Pt、采用现有的微加 工技术刻出一条输出信号线 0 (如图 2a所示）； 在其上依次沉积厚度为 lOnm的 Ru下 部缓冲导电层 8， 厚度为 5nm的 Co硬磁层 1， 厚度为 lnm的 A1中间层 2， 再经等离 子体氧化为 A10， 厚度为 2nm的 Co软磁层 3和厚度为 5nm的 Ru覆盖层 9。 上述多 层膜的生长条件： 备底真空： 5χ10'δ帕； ¾射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜 1.1埃 /秒； 生长 时间：薄膜厚度 /生长速率；在沉积硬磁层 1和软磁层 3时，施加 150Oe平面诱导磁场。 沉积好的磁性多层膜采用现有技术中的微加工技术， 即首先在制备好的磁性多层膜上 经过涂胶、 前烘， 再在电子束曝光机上， 根据所需的环状图形对片基进行曝光， 接着 显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多层膜刻成环形， 最后用去胶剂浸泡 进行去胶， 即形成矩形闭合环状几何结构， 环的内径为 200nm, 外径为 250nm， 宽度 为 50nm, 矩形环的短边与长边内宽度的比值为 1:1。 然后在此刻蚀成形的环状磁性多 层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉冲激光沉积、 电 化学沉积、分子束外延等，沉积一层 lOOnm厚的 Si02绝缘层，将各环状多层膜进行掩 埋并且相互隔离， 釆用现有技术中的微加工技术进行刻蚀， 即首先在聚焦离子束设备 上定位到沉积有环状多层膜的位置，接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行 刻蚀， 使得绝缘层下掩埋的环状磁性多层膜暴露。 最后利用高真空磁控溅射设备沉积 一层厚度为 lOOnm的金属导电层 Cu, 生长条件如前所述， 用常规半导体微加工工艺 加工出输入信号线 A'、 B'、 C， 和输出信号线 0'， 即首先经过涂胶、 前烘， 再在紫 外曝光机上， 利用带有待加工图案的光刻版进行曝光， 接着显影、 定影、 后烘， 然后 用离子刻蚀方法把磁性多层膜上的金属导电层刻成输入和输出信号线的形状， 最后用 去胶剂浸泡进行去胶， 即得到本发明的具有环状磁性多层膜的此逻辑元件。
三条输入信号线（A、 B和 C)均穿过环状闭合型磁性多层膜单元，每条输入线中 流过的电流强度均相同， 分别将 "0"和 " 1 "分配给它们， 利用输入信号 A、 B、 C 的组合， 决定磁性多层膜中各磁性层的磁化方向， 将通过磁性多层膜单元的磁电阻效 应的大小作为输出信号， 由输出信号线输出。 在这一方案中， 实现逻辑功能分两步， 第一步进行逻辑设定； 第二步进行逻辑操作。 如果只有输入线 A有输入电流， 其各层 的磁化均不变化； 当输入线 A和 B同时有电流输入时， 软磁性层 （SFM) 3的磁化方 向可以翻转； 当输入线八、 B和 C同时有电流输入时， 硬磁性层 （HFM) 1的磁化方 向可以翻转。
首先说明最基本的两种逻辑函数—一 "与" 函数（AND)和 "非" 函数（OR)。 对于 AND函数， 第一步， 逻辑设定： 给输入线 （A、 B和 C)均施加上电流， 使硬磁 层（HFM) 1、软磁层（SFM) 3的磁化方向均是逆时针方向。第二步， 进行逻辑功能， 只有当反向电流（即产生一个顺时针磁场的电流）同时施加在输入线 A和 B上时， 才 能把软磁层（SFM) 3的磁化方向从逆时针方向切换到顺时针方向。 OR门通过类似的 操作， 但在开始时， 硬磁层（HFM) 1的磁化方向是逆时针方向， 而软磁层（SFM) 3 的磁化方向则是顺时针方向。 切换硬磁层 （HFM) 1和软磁层 （SFM) 3 的磁化方向 可以实现另两种基本的逻辑函数， 即 NOT AND (NAND, 与非）或 0101 (；^01， 或非）。 所有输入信号线都有电流就可以使硬磁层（HFM) 1和软磁层（SFM) 3的磁 化方向切换。切换软磁层（SFM) 3的磁化方向所需的磁场小于切换硬磁层（HFM) 1 的磁化方向所需的磁场， 因此， 上、 下两层的极性可以相互独立地切换。
通过适当的组合， 可以构造出任何公知的已知逻辑。 实施例 2
本实施的第二种基于环状闭合型磁性多层膜的磁逻辑元件其制备方法与实施例 1 相同。 '
参考图 5和图 3 b，第二种基于环状闭合型磁性多层膜的磁逻辑元件包括：输入信 号线、 输出信号线和环状闭合型磁性多层膜单元。 该环状闭合型磁性多层单元的核心 结构为：一个由厚度为 5 nm CoFe构成的下部硬磁层（HFM1)11，一个由厚度为 2.4 mn Ru构成的第一中间层 （11)21， 一个厚度为 4 nm NiFeSiB构成的软磁层（SFM)3， 一个 由厚度为 2.2 nmAu构成的第二中间层（12)22，一个形成第二中间层之上的由厚度为 4 nm CoFe构成的上部硬磁层（HFM2)12。 环状闭合型为圆形环， 内环边长为 200 nm， 外环边长为 300 nm。
在这种方案中， 核心结构为双伪自旋阀结构， 软磁层 (SFM)3的矫顽力较小， 可以 称为自由层， 其磁化方向容易改变。 上、 下两硬磁性层 （HFM1 ) 11 和 （HFM2) 12 的矫顽力较大， 它们的磁化方向相对固定， 它们的翻转场也一样的， 相当于一层磁性 层， 所以， 基于这种结构的磁逻辑元件的操作模式同于实施例 1。 实施例 3
如图 6和图 4a所示，本发明的第三种基于环状闭合型磁性多层膜的磁逻辑元件其 制备方法的具体过程与实施例 1相同， 包括： 输入信号线、 输出信号线和环状闭合型 磁性多层膜单元。 该环状闭合型磁性多层膜单元的核心结构为： 一个由厚度为 10 nm 的反铁磁材料 IrMn构成反铁磁钉扎层（AFM) 4和 3nm厚 CoFeB组成的被钉扎磁性 层（FM1)5， 一个厚度为 1.0 nm A1203构成的中间层（1)2， 一个由厚度为 3 run CoFeB 的自由软磁层 (FM2)6。 环状闭合型为圆形， 其内环的尺寸为 300 mn， 外环的尺寸为 400 nm。
基于这种结构的磁逻辑元件的操作模式同实施例 1。 实施例 4
本发明的第四种基于环状闭合型磁性多层膜的磁逻辑元件其制备方法的具体过程 与实施例 1相同， 包括： 输入信号线、 输出信号线和环状闭合型磁性多层膜单元。 该 环状闭合型磁性多层膜单元的核心结构为：一个由厚度为 12nm的 PtPdMn构成反铁磁 钉扎层（AFM) 4， 由人工反铁磁耦合磁性层 CoFe(2 nm)/Ru(0.8 nm)/CoFeB(4 nm)构成 的被钉扎磁性层（FM1)5， 一个厚度为 2.0 nm MgO (001 )的中间层 （1)2， 一个厚度为 4 nm CoFeB组成的自由软磁层（FM2)6。 环状闭合型为椭圆， 其内环的长轴和短轴尺 寸分别为 400 nm和 600 nm, 其外环的长轴和短轴尺寸分别为 800 nm和 1000 nm。 基于这种结构的磁逻辑元件的操作模式同于实施例 1。 实施例 5
本发明的第五种基于环状闭合型磁性多层膜的磁逻辑元件其制备方法的具体过程 与实施例 1相同， 包括： 输入信号线、 输出信号线和环状闭合型磁性多层膜单元。 该 环状闭合型磁性多层膜单元的核心结构为：： 一个由厚度为 12nm的 PtMn构成下部反 铁磁钉扎层 （ AFM1 ) 41， 由 CoFe(2 nm)/Ru(0.8 nm)/CoFeB(4 nm)构成的被钉扎磁性 层（FM1)5; —个厚度为 1.8 nm的 MgO构成的第一中间层 （11)21 ; —个厚度为 6 nm CoFeB构成的自由软磁层（FM2)6;—个厚度为 2.0 nm MgO构成的第二中间层（12)22; 一个由人工反铁磁耦合磁性层 CoFeB(4 nm)/Ru(0.8 nm)/CoFe(4 nm)构成的上部被钉扎 磁性层（FM3 ) 7, 一个由 12nm厚的 PtMn构成的上部反铁磁钉扎层 (AFM2)42。环状 闭合型为矩形， 环的内矩形长边和短边分别为 1000 nm和 2000 mn， 环的外矩形长边 和短边分别为 1500 nm和 2500 nm。
在这种方案中，磁性多层膜结构称为双势垒层磁性隧道结， 自由软磁层 (FM2)6的 矫顽力较小， 称为自由层， 其磁化方向容易改变。 被钉扎磁性层 （FM1 ) 5 和上部被 钉扎磁性层（FM3 ) 7被反铁磁性 PtMn钉扎， 这两层的磁化方向相对固定， 它们的翻 转场是一样的， 相当于一层磁性层， 所以， 基于这种结构的磁逻辑元件的操作模式同 实施例 1。 实施例 6
如图 10和图 8a所示， 本发明的第六种基于环状闭合型磁性多层膜的磁逻辑元件 其制备方法与实施例 1相^ U 只是在刻蚀出环状闭合型磁性多层膜后， 用二氧化硅绝 缘， 然后采用现有技术中的微加工技术， 即首先在聚焦离子束设备上定位到环状多层 膜的几何中心位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 形成一定 尺寸的柱状孔洞， 之后利用聚焦离子束辅助沉积方法在孔洞位置沉积金属材料， 即形 成一个相应尺寸和形状的金属芯 10。 其结构包括： 输入信号线、 输出信号线和闭合环 状磁性多层膜单元， 以及闭合环中间的金属芯 10， 其中， 输入线号线与金属芯相连或 其中一条输入信号线布置在闭合环的中间与金属芯 10相连。该环状磁性多层膜的核心 结构为： 一个厚度为 12nm的 FeMn构成反铁磁钉扎层（AFM) 4， 在其上形成一个厚 度为 15 nm的 Co2MnSi作为被钉扎磁性层（FM1)5,厚度为 2.5 nm的 A1N作为中间层 (1)2， 一个由人工反铁磁耦合磁性层 Ni79Fe21 (3 nm) /Ru(0/85 nm)/ Ni79Fe21 (3 nm)构 成的自由软磁层（FM2)6。 该椭圆环的短轴内径为 500nm, 短轴外径为 800nm， 长轴 内径为 700nm， 长轴外径为 lOOOnm, 椭圆环的短轴与长轴内径的比值为 1:1.4。 布置 在环状闭合型磁性多层膜的几何中心的金属芯 10为短轴为 50nm， 长轴为 80nm椭圆 型的 A1金属芯， 其长度露出磁性多层膜单元， 并与输入信号线八、 A'、 B、 B\ C、 C 接触。
在这一方案中， 当只有一条输入线有电流时， 磁性多层膜的磁化状态不变； 当同 时有两条线有输入电流时， 自由软磁层 （FM2) 6 的磁化方向会翻转； 当三条输入线 均有电流时， 被钉扎磁性层（FM1 ) 5 的磁化方向也可以改变。 与现有技术和实施例 1-5相比， 由于输入线没有直接穿过磁性多层膜，其电流允许通过的电流极限较大，会 产生一个较强的环状磁场， 有利于实现逻辑操作， 进而降低元件的功耗。
这方案中， 实现逻辑功能分两步， 第一步进行逻辑设定； 第二步进行逻辑操作。 首先说明一下两种逻辑函数一一 "与" 函数（AND)和 "非" 函数（OR)。
对于 AND函数， 第一步， 输入线均通过电流， 给 " 0"信号， 此时， 被钉扎磁性 层（FM1 ) 5、 自由软磁层 （FM2) 6的磁化方向均逆时针方向， 这就是 AND逻辑的 初始状态， 此时， 输出为 0。 其逻辑操作类似于第一实施例， 在此略去详细过程。 其 他逻辑函数如 OR (非）、 NOT AND (NAND, 与非）和 NOT OR (NOR, 或非）也类 似于实施例 1。
另外， 这种方案还可实现 XOR函数功能， 在此函数逻辑操作中一条输入线充当 功能线。 当该条输入线中有电流经过时， 由于它会产生一个环状的磁场， 使得输入线 在磁性多层膜上产生的有效作用磁场较大， 从而有利于被钉扎磁性层 （FM1 ) 5 的磁 化方向的反转。 因此， 当有另外两条输入线同时作用时被钉扎磁性层（FM1 ) 5 的磁 化方向也随之翻转。 具体操作过程如下：
第一步， 逻辑设定： 输入线 C、 C' 施加电流， 同时， 输入线 Α、 Α'、 Β、 Β' 通 以电流， 即均给 "0"信号， 此时， 被钉扎磁性层 （FM1 ) 5 和自由软磁层 （FM2) 6 的磁化方向均呈逆时针方向排列； 然后再给输入线 Α、 Α， 和 B、 B' 以 " 1 "信号， 输入线 C、 C， 不通电流， 此时， 自由软磁层（FM2) 的磁化方向呈顺时针方向排列， 这就是 XOR逻辑的初始状态。
第二步， 逻辑过程： 首先， 给输入线。、 C 施加电流信号， 当输入线八、 A， 和 B、 B， 的信号均使输出为低阻态时， 即为 "0"; 当输入线 A、 A' 和 B、 B， 的信号 只有一个使自由软磁层 （FM2) 逆时针方向排列时， 此时输出为高阻态， 即为 " 1 "; 当输入信号线 A、 A' 和 B' 信号 "1 "， 输出为低阻态， 即为 "0"。 从本实施例可知， 基于环状闭合型且含芯线的磁性多层膜的磁逻辑元件不仅能实 现更多的逻辑功能， 还有利于多层膜磁化状态的操作， 进而降低元件的功耗。 实無 7
如图 8a所示，本发明的第七种基于环状闭合型磁性多层膜的磁逻辑元件，其制备 方法的具体过程与实施例 6相同， 包括： 输入信号线、 输出信号线和闭合椭圆环状磁 性多层膜单元以及出于闭合椭圆环中间的金属芯 10。 该环状磁性多层膜的核心结构 为: 一个厚度为 10 nm的 IrMn构成反铁磁钉扎层 （AFM) 4， 厚度为 4nm的 CoFe作 为被钉扎磁性层（FM1 ) 5，厚度为 2.5 mnMgO构成中间层 (1)2，一个由厚度为 4 nm的 CoFeB构成的自由软磁层（FM2) 6。该椭圆形环的内短轴为 200nm， 内长轴为 300nm， 外短轴为 400nm， 外长轴为 500nm。 布置在环状闭合型磁性多层膜的几何中心的金属 芯 10为椭圆形的 Au芯， 尺寸为短轴为 20nm，长轴为 30ran的椭圆形；其长度露出磁 性多层膜单元， 并与输入信号线 C、 C' 接触。 实施例 8
如图 7a所示，本发明的第八种基于环状闭合型磁性多层膜的磁逻辑元件，其制备 方法的具体过程与实施例 6相同， 包括： 输入信号线、 输出信号线和闭合椭圆环状磁 性多层膜单元以及出于闭合椭圆环中间的金属芯。 该环状磁性多层膜的核心结构为： —个厚度为 5 nm的 Co构成硬磁层（HFM) 1 , 厚度为 2.5 nmMgO构成中间层 (1)2， 一个由厚度为 2 nm的 CoFeB构成的软磁层（SFM) 3。该椭圆形环的内短轴为 400nm， 内长轴为 500nm， 外短轴为 600nm， 外长轴为 700nm。 布置在环状闭合型磁性多层膜 的几何中心的金属芯为椭圆形的 Au芯，尺寸为短轴为 40nm，长轴为 50nm的椭圆形。 其长度露出磁性多层膜单元， 并与输入信号线。、 C 接触。 实施例 9
如图 9和图 7b所示， 本发明的第九种基于环状闭合型磁性多层膜的磁逻辑元件， 其制备方法的具体过程与实施例 6相同， 包括： 输入信号线、 输出信号线和闭合椭圆 环状磁性多层膜单元以及出于闭合椭圆环中间的金属芯。 该环状磁性多层膜的核心结 构为： 一个厚度为 5 nm的 Co构成下部硬磁层（HFM1 ) 11 , 厚度为 2.5 nmMgO构成 第一中间层 (11)21， 一个由厚度为 2 nm的 CoFeB构成的软磁层（SFM) 3， 厚度为 2.5 nm的 MgO构成第二中间层 (12)22， 厚度为 5 mn的 Co构成上部硬磁层 （HFM2) 12。 该椭圆形环的内短轴为 300nra，内长轴为 800nm，外短轴为 500nm，外长轴为 1000nm。 布置在环状闭合型磁性多层膜的几何中心的金属芯为椭圆形的 Au芯， 尺寸为短轴为 30nm,长轴为 80nm的椭圆形；其长度露出磁性多层膜单元，并与输入信号线入、 A'、 B、 B，、 C、 C 接触。
以上实施例 2-9的下部缓冲导电层 8， 上部覆盖层 9也同实施例 1相同。
以上实施例 7-9的具有磁性多层膜单元的磁逻辑元件的操作模式同实施例 6。 值得注意的是， 本实施例中环状也可以是方形环、 圆环以及多边形环， 本实施例 中的磁性多层膜也可以是如前所述的其他结构。
虽然本发明这里已联系一些特定的实施例加以叙述， 但仍清楚可见， 对那些熟练 本技术的人士说来， 显然本发明还会有很多选择方案， 修改型和变型。 为此， 应把在 所附权利要求的精神实质和范围内的， 所有一些修改型和变型都包括在本发明之内。

Claims

权利要求
1、一种具有环状磁性多层膜的磁逻辑元件， 包括在衬底上沉积导电金属层， 经刻 蚀出的输入信号线 （A)、 (B) 和 （C)， 以及输出信号线 （0) ; 或在输入信号线 （A)、
(B) 和 （CO上沉积一导电金属层， 刻蚀得到输出信号线 （0)， 和沉积具有环状磁性 多层膜的单元； 其特征在于： 所述的具有环状磁性多层膜的单元是设置在输入信号线
(A)、 (B)和 （C)， 以及输出信号线 （0)上， 并加工成闭合环型的磁性多层膜单元， 再在该闭合环型的磁性多层膜单元上沉积导电金属层， 经刻蚀得到输出信号线 （0' ) 和输入信号线 (Λ， )、 （Β' ) 及（C' )； 或在输出信号线 （0' ) 上沉积金属导电层， 刻蚀成输入信号线 （Α' )、 （Β ' )及（ )。
2、按权利要求 1所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于：所述的 闭合环型的磁性多层膜单元的横截面呈闭合的矩形环、 椭圆环或者多边形环。
3、按权利要求 2所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于： 所述的 闭合的矩形环磁性多层膜的内环的宽度为 10〜100000nm， 外环的宽度为 20〜 200000nm, 矩形内环的宽度与长度的比值为 1 :' 1〜5。
4、按权利要求 2所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于： 所述的 闭合的椭圆环磁性多层膜的内环的短轴为 10〜100000nm，短轴与长轴的比值为 1 : 1〜 5， 椭圆外环的短轴为 20〜200000nm。
5、按权利要求 2所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于：所述的 闭合的多边形磁性多层膜的内边边长为 10〜100000nm，外边的边长为 20〜200000nm， 闭合环的宽度在 10〜100000nm之间。
6、一种应用权利要求 1所述的具有环状磁性多层膜的磁逻辑元件进行逻辑处理的 方法， 其特征在于： 包括以下步骤：
1 )逻辑设定：施加毫安量级或小于毫安量级强度的电流流过两条输入信号线（A)、 (A，）、（B)、 （B，）， 或三条输入信号线 （A)、 （A，）、（B)、 （B，）、 （C)， ( C，）每条 输入线中流过的电流强度相同或不同的值， 且均穿过磁性多层膜， 分别将 "0"和 " 1 " 分配给磁性多层膜单元， 通过极化电流利用自旋转移力矩效应和电流产生的闭合环状 磁场直接驱动， 来实现各磁性层磁矩的翻转， 从而把逻辑元件的逻辑设定；
2)逻辑操作： 通过只激活两条输入信号线 （A)、 （A' )、 （B)、 （B，）， 或三条输 入信号线 （A)、 （A' )、 （B)、 （B，）、 （C)， (C )来执行这项逻辑操作； 只有当两条 输入信号线（Α)、 （Α，）、 （Β)、 (Β' )或三条输入信号线 （Α)、 （Α，）、 （Β)、 (Β' ),
(C), (C，）通过相同方向的电流时产生了极性相同的磁场， 一种选定的初始状态被 翻转， 使输出值从 " 1 "变" 0"， 从而得到多种逻辑状态， 并通过磁性多层膜的磁电阻 效应的大小作为输出信号。
7、一种具有环状磁性多层膜的磁逻辑元件，包括在衬底上沉积导电金属层， 经刻 蚀出的输入信号线 （A)、 (B)和 （C)， 以及输出信号线 （0); 或在输入信号线 （A)、
(B)和 （C)上沉积一导电金属层， 再刻蚀得到输出信号线 0， 和沉积具有环状磁性 多层膜的单元； 其特征在于： 所述的具有环状磁性多层膜的单元是设置在输入信号线
(A)、 (B) 和 （C)， 以及输出信号线（0)上， 并加工成闭合环型的磁性多层膜单元， 以及在闭合环形的磁性多层膜单元的几何中心位置设置一金属芯， 再在该含有金属芯 的具有环状磁性多层膜单元上沉积导电金属层， 经刻蚀得到输出信号线（0' )和输入 信号线 ， )、 （Β' )及（c， ）； 或在输出信号线（ο' )上沉积金属导电层， 刻蚀成 输入信号线（A， )、（B， )及（(；， ）， 其中输入信号线（A)、（A，）、（B)、（B，）、（C)，
(C )至少有一条与其相连接， 该金属芯的形状与闭合环形的磁性多层膜单元的形状 相匹配， 其横截面为相应的矩形或椭圆形或者多边形； 金属芯的高度为露出闭合环形 的磁性多层膜单元。
8、如权利要求 7所述的基于环状闭合型磁性多层膜的磁逻辑元件， 其特征在于： 所述磁性多层膜单元的矩形环的内环的宽度为 10〜100000nm， 矩形外环的宽度为 20〜200000nm， 矩形内环的宽度与长度的比值为 1 : 1〜5； 所述的金属芯横截面的矩 形的宽度为 5〜50000nm， 宽度与长度的比值为 1 : 1〜5。
9、如权利要求 7所述的基于环状闭合型磁性多层膜的磁逻辑元件， 其特征在于： 所述磁性多层膜单元的椭圆环的内环的短轴为 10〜100000nm， 短轴与长轴的比值为 1： 1〜5， 椭圆外环的短轴为 20〜200000nm; 所述的金属芯横截面的椭圆形的短轴为 5〜50000nm， 椭圆形的短轴与长轴比值为 1 : 1〜5。 10、如权利要求 7所述的基于环状闭合型磁性多层膜的磁逻辑元件，其特征在于: 所述磁性多层膜单元的多边形闭合环的内边边长为 10〜100000nm， 外边的边长为 20〜200000nm， 闭合环的宽度在 10~100000nm之间； 所述的金属芯横截面的多边形 的各边长为 5〜5OOO0nm。
11、 按权利要求 7所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于： 所述 的金属芯的材料为 Au、 Ag、 Pt、 Ru、 W、 Ti、 Cu或 Al。
12、 一种应用权利要求 7所述的具有环状磁性多层膜的磁逻辑元件进行逻辑处理 的方法， 实现低功耗的逻辑运算操作， 其特征在于： 包括以下步骤：
1 )逻辑设定：施加毫安量级或小于毫安量级强度的电流流过两条输入信号线（ A；)、 (A，）、 （B)、 （B，）， 或三条输入信号线 （A)、 （A，）、 (B), (B，）、 （C)， (C，）每条 输入线中流过的电流强度相同或不同的值，且均穿过环状闭合型磁性多层膜的金属芯， 而不穿过磁性多层膜； 或两条输入线（A)、 (B)通电流穿过磁性多层膜单元， 另一条 输入信号线 （C) 为功能线， 通电流穿过金属芯， 分别将 "0"和 " 1 "分配给磁性多 层膜单元， 通过极化电流利用自旋转移力矩效应和电流产生的闭合环状磁场直接驱动 来实现各磁性层磁矩的翻转， 从而把逻辑元件的逻辑设定；
2)逻辑操作： 通过只激活两条输入信号线 （A)、 （A' )、 （B)、 （B' )， 或三条输 入信号线 （A)、 （A' )、 （B)、 （B，）、 （C)， (C )来执行这项逻辑操作； 只有当两条 输入信号线 （A)、 （A，）、 （B)、 (B，）或三条输入信号线 （A)、 (A，）、 (B)、 （B，）、
(C)， （C' )通过相同方向的电流时产生了极性相同的磁场， 一种选定的初始状态才 会被翻转， 使输出值从" 1 "变" 0"， 从而得到多种逻辑状态， 并通过磁性多层膜的磁 电阻效应的大小作为输出信号。
13、 按权利要求 1或 7所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于： 所述的导电金属层为电阻率小的 Au、 Ag、 Pt、 Ti、 Cu或 Al材料。
14、 按权利要求 1或 7所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于- 所述的磁性多层膜单元为在下部缓冲导电层 （8) 上， 顺序沉积硬磁层 （1 )、 中间层
(2)和软磁层（3); 或在在下部缓冲导电层 （8)上， 顺序沉积下部硬磁性层 （11)、 第一中间层 （21 )、 软磁层 （3)、 第二中间层 (22)、 上部硬磁性层 （12)和上部覆盖 层 （9)。
15、 按权利要求 14所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于： 所 述的硬磁层 （1 )、 下部硬磁性层 （11 )、 上部硬磁性层 （12 )材料由沉积以下： Co, Fe， Ni， CoFe或 NiFeCo铁磁材料构成， 其厚度为 2〜20 nm;
所述的中间层 （2)、 第一中间层 （21 )、 第二中间层 （22 ) 由金属层或者绝缘体 势垒层构成， 其中金属层材料包括 Ti， Zn， ZnMn, Cr， Ru， Cu， V或 TiC; 绝缘体 势垒层材料包括 A1203， MgO, TiO， ZnO， (ZnMn)O, CrO, VO, 或 TiCO; 其中 间层的厚度为 0.5〜10nm;
所述的软磁层（3 ) 的组成材料为自旋极化率高， 矫顽力较小的铁磁材料， 包括： Co, Fe, Ni或它们的金属合金 MFe， CoFeSiB, NiFeSiB, 或非晶 Co1(^x.yFexBy其中 0<x<100, 0<y < 20; 或 Heusler合金， 如 Co2MnSi， Co2Cr0.6Fe0.4Al; 所述的软磁层的 厚度为 l〜20nm。
16、 按权利要求 15所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于： 所 述的软磁层材料为 CosoFeK), Co75Fe25， Co4oFe4oB2o， 或 Ni79Fe21。
17、 按权利要求 1或 7所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于： 所述的磁性多层膜单元为在下部缓冲导电层 （8) 上， 顺序沉积反铁磁钉扎层 （4)、 被钉扎磁性层 （5)、 中间层 （2)、 自由软磁层 （6)和上部覆盖层 （9);
或在单元为在下部缓冲导电层 （8 )上， 顺序沉积反铁磁钉扎层 （4)、 人工反铁 磁耦合磁性层、 中间层 （2)、 自由软磁层 （6)和上部覆盖层 （9);
或在单元为在下部缓冲导电层（8)上， 顺序沉积下部反铁磁钉扎层（41 )、 被钉 扎磁性层（5)、 第一中间层（21 )、 自由软磁层（6)、 第二中间层 （22)、 上部被钉扎 磁性层（7)、 上部反铁磁钉扎层 （42)和上部覆盖层 （9〉；
或在单元为在下部缓冲导电层（8)上， 顺序沉积下部反铁磁钉扎层 （41 )、 人工 反铁磁耦合磁性层、 第一中间层（21 )、 自由软磁层 （6)、 第二中间层 ( 22)、 人工反 铁磁耦合磁性层、 上部反铁磁性层 （42)和上部覆盖层 （9)。
所述的人工反铁磁親合磁性层由两层被钉扎磁性层 （5) 或自由软磁层 （6) 或上 部被钉扎磁性层 （7) 中间夹一层 Ru构成。 18、 按权利要求 17所述的具有环状磁性多层膜的磁逻辑元件， 其特征在于： 所述的反铁磁钉扎层 （4)、 下部反铁磁钉扎层 （41 ) 和上部反铁磁钉扎层 （42) 的组成材料， 包括 Ir、 Fe、 Rh、 Pt或 Pd与 Mn的合金材料、 CoO、 NiO或 PtCr反铁 磁性材料， 其厚度为 6〜20 nm;
所述的被钉扎磁性层 （5)、 自由软磁层 （6)、 上部被钉扎磁性层（7)、 人工反铁 磁耦合磁性层的组成材料为铁磁性材料、 半金属磁性材料或磁性半导体材料；
其中所述的被钉扎磁性层 （5)、 自由软磁层 （6)、 上部被钉扎磁性层 （7)、 人工 反铁磁耦合磁性层的厚度均为 2〜10 nm;
所述的铁磁性材料包括： Fe、 Co、 Ni 3d过渡族磁性金属， Co-Fe、 Co-Fe-B、 Ni-Fe、 Co-Fe-Ni、 Gd-Y铁磁性合金， Pr、 Nd、 Sm、 Gd、 Tb、 Dy、 Ho、 Er稀土金属及其铁 磁合金；
所述的半金属磁性材料包括： Fe304、 Cr02、 Lao.7Sr0.3Mn03和 Co2MnSi Heussler 口 itt ;
所述的磁性半导体材料包括： Fe、 Co、 Ni、 V、 Mn掺杂的 ZnO、 Ti02、 Hf02或 Sn02， 也包括： Mn掺杂的 GaAs、 InAs、 GaN或 ZnTe;
所述的 Ru层的厚度为 0.7〜0.9 nm。
所述的中间层 （2)、 第一中间层 （21 )和第二中间层 （22) 的组成材料为 MgO、 A1203、 A1N、 Ta205或 ΗίΌ2绝缘氧化物， 或金属材料， 该金属材料为 Ti， Zn, ZnMn, Cr， Ru, Cu， V或 TiC， 其厚度为 0.6〜10 nm。
PCT/CN2007/001174 2006-04-11 2007-04-11 Élément magnétique logique à couches magnétiques toroïdales multiples, et procédé de traitement logique l'utilisant WO2007115509A1 (fr)

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CN100477316C (zh) 2009-04-08
US8236576B2 (en) 2012-08-07
US20090273972A1 (en) 2009-11-05

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