[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

WO2007111729A2 - Appareil et procédé permettant d'effectuer un traitement électrochimique et mécanique à l'aide d'éléments facilitant un écoulement fluidique - Google Patents

Appareil et procédé permettant d'effectuer un traitement électrochimique et mécanique à l'aide d'éléments facilitant un écoulement fluidique Download PDF

Info

Publication number
WO2007111729A2
WO2007111729A2 PCT/US2006/061748 US2006061748W WO2007111729A2 WO 2007111729 A2 WO2007111729 A2 WO 2007111729A2 US 2006061748 W US2006061748 W US 2006061748W WO 2007111729 A2 WO2007111729 A2 WO 2007111729A2
Authority
WO
WIPO (PCT)
Prior art keywords
conductive layer
conductive
pad assembly
substrate
pad
Prior art date
Application number
PCT/US2006/061748
Other languages
English (en)
Other versions
WO2007111729A3 (fr
Inventor
You Wang
Renhe Jia
Stan D. Tsai
Yongqi Hu
Zhihong Wang
Jie Diao
Gerald John Alonzo
Lakshmanan Karuppiah
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/327,527 external-priority patent/US20070153453A1/en
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2008549519A priority Critical patent/JP2009522809A/ja
Publication of WO2007111729A2 publication Critical patent/WO2007111729A2/fr
Publication of WO2007111729A3 publication Critical patent/WO2007111729A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating

Definitions

  • Embodiments of the present invention generally relate to a processing apparatus for planarizing or polishing a substrate. More particularly, the invention relates to polishing pad design with fluid flow assist elements for planarizing or polishing a semiconductor wafer by electrochemical mechanical planarization.
  • a substrate such as a semiconductor wafer.
  • the substrate may become non-planar and require planarization, in which previously deposited material is removed from the substrate to form a generally even, planar or level surface.
  • the process is useful in removing undesired surface topography and surface defects, such as rough surfaces, agglomerated materials, crystal lattice damage and scratches.
  • the planarization process is also useful in forming features on the substrate by removing excess deposited material used to fill the features and to provide an even or level surface for subsequent deposition and processing.
  • Electrochemical Mechanical Planarization is one exemplary process which is used to remove materials from the substrate.
  • ECMP typically uses a polishing pad having conductive elements and combines physical abrasion with electrochemical activity that enhances the removal of materials.
  • the polishing pad is attached to an apparatus having a rotating platen assembly that is adapted to couple the pad to a power source.
  • the apparatus also has a substrate carrier, such as a polishing head, that is mounted on a carrier assembly above the pad that holds a substrate.
  • the polishing head places the substrate in contact with the polishing pad and is adapted to provide downward pressure, controllably urging the substrate against the polishing pad.
  • the polishing pad is moved relative to the substrate by an external driving force.
  • FIG. 8 depicts a simplified conventional pad 806.
  • Contaminants 810 may accumulate on apertures 808 of the polishing pad 806 and/or on the upper surface of the conductive electrodes 804.
  • the contaminants 810 insulate the conductive electrodes 804 from the process fluid, thereby adversely influencing the electrochemical activity between the conductive electrodes 804 and substrate.
  • apertures 808 are blind holes, it is difficult to flush contaminants 810 disposed in the apertures 808 from the pad 806.
  • the contaminants 810 detrimentally generate defects in a substrate surface during polishing.
  • the accumulated contaminants may disadvantageously deteriorate the conductivity of the conductive electrodes and the qualities of the polishing pad, resulting in consumable part lifetime degradation and higher process cost. [0005] Therefore, there is a need for an improved polishing pad.
  • the apparatus includes a first conductive layer having an upper surface adapted to contact a substrate, a conductive carrier coupled to and disposed below the first conductive layer, a second conductive layer disposed below the conductive carrier with an isolation layer therebetween, and a plurality of fluid flow assist elements disposed below the second conductive layer.
  • an apparatus in another embodiment, includes a rotatable platen having a removable pad assembly disposed thereon.
  • a fluid delivery is positionable to provide a process fluid to an upper surface of the pad assembly.
  • the pad assembly includes a first conductive layer adapted to contact a substrate, a second conductive layer, an isolation layer separates the conductive layers, and a plurality of fluid flow assist elements defining a lateral flow network defined between the pad assembly and the platen.
  • the method includes contacting a surface of a pad assembly disposed on a platen with a substrate, flowing process fluid from the surface of the pad assembly through apertures towards the platen and into contact with an electrode, draining the apertures, and biasing the substrate relative to the electrode.
  • Figure 1 is a top view of one embodiment of a processing system
  • Figure 2A is a sectional view of an exemplary ECMP station with a fluid flow assist element disposed in a pad assembly;
  • Embodiments of the present invention generally describe a pad assembly having fluid flow assist elements that aid the dynamic flow and circulation of the process fluid through the pad assembly.
  • the fluid flow assist elements facilitate the release and cleaning of the processing byproduct by providing channels defined between the fluid flow assist elements, thus sweeping byproduct from the pad assembly and maintaining more stabile electrochemical environment in the system.
  • Figure 1 depicts a plan view of one embodiment of a processing system 100 generally having a factory interface 120, a loading robot 116, and one or more polishing modules 105.
  • the loading robot 116 is disposed proximate the factory interface 120 and the polishing module 105 to facilitate the transfer of substrates 114 therebetween.
  • the polishing module 105 generally includes at least a first electrochemical mechanical planarization (ECMP) station 102, and optionally, at least one conventional chemical mechanical planarization (CMP) station 106 disposed in an environmentally controlled enclosure 188.
  • ECMP electrochemical mechanical planarization
  • CMP chemical mechanical planarization
  • An example of a processing system 100 that may be adapted to practice the invention is the REFLEXION ® LK Ecmp system available from Applied Materials, Inc. located in Santa Clara, California.
  • Other planarizing modules including that from other manufactures, may be adapted to practice the invention.
  • the planarizing module 105 shown in Figure 1 includes a first ECMP station 102, a second ECMP station 103, and one CMP station 106. It is to be -
  • the carousel 112 generally supports a plurality of carrier heads 152, each of which retains one substrate 114 during processing.
  • the carousel 112 moves the carrier heads 152 between the transfer station 110 and stations 102, 103 and 106.
  • One carousel that may used is generally described in United States Patent No. 5,804,507, issued September 8, 1998, entitled “Radially Oscillating Carousel Processing System for Chemical Mechanical Polishing".
  • a controller 140 comprising a central processing unit (CPU) 142, memory 144 and support circuits 146 is connected to the polishing system 100.
  • CPU central processing unit
  • the carrier head may be a TITAN HEADTM or TITAN PROFILERTM wafer carrier manufactured by Applied Materials, Inc. It is contemplated that other carrier head 186 may be utilized to use in the polishing system 100.
  • the platen assembly 230 is rotationally disposed on a base 108 and supports a pad assembly 222. The platen assembly 230 is supported above the base 108 by a bearing 238 so that the platen assembly 230 may be rotated relative to the base 108. An area of the base 108 circumscribed by the bearing 238 is open and provides a conduit for the electrical, mechanical, pneumatic, control signals and connections communicating with the platen assembly 230.
  • a process fluid delivery system 255 is generally disposed adjacent the platen assembly 230.
  • the process fluid delivery system 255 includes a nozzle or outlet 204 coupled to a process fluid source 248.
  • the outlet 204 flows process fluid, such as electrolyte, from the process fluid source 248 onto the process surface 125 of the pad assembly 222.
  • the process fluid generally provides an electrical path for biasing the substrate 114 and driving an electro-chemical process to remove and/or deposit material on the substrate 114.
  • the process fluid may be delivered from other portion of the system, such as from the bottom of the platen 230, to the processing surface 125 of the pad assembly 222 to provide a uniform distribution of the process fluid on the surface of the pad assembly.
  • the isolation layer 214 may be made of a soft material that is configured to provide compressibility to the pad assembly 222.
  • the isolation layer may be made of a polymer material, such as an open cell foamed polymers, closed cell foamed polymers, a MYLAR ® material, heat activated adhesives, or combinations thereof
  • the isolation layer 214 may have a hardness of about 60 Shore A to about 100 Shore A.
  • the pad base 210 is a polyethylene terephthalate (PET) material, and derivatives thereof, such as a MYLAR ® polymer sheet.
  • PET polyethylene terephthalate
  • the PET material has a density between about 1.25 grams/cm 2 to about 1.45 grams/cm 2 and a modulus of elasticity between about 700,000 psi to about 760,000 psi.
  • the pad base 210 material may have a hardness of about 30 Shore A to about 90 Shore A, and is typically harder than the isolation layer 214.
  • the channels 386 allows the byproduct to be released therefrom, preventing the contaminant restrained, accumulated or trapped on the second conductive layer 312 as the platen assembly 330 rotates, thus maintaining more stabile electrochemical activity within each of the plurality of functional cells 307. Additionally, channels 386 prevent the contaminants and particles accumulated on the surface of the first conductive layer 311 , eliminating defects generation to substrates processed thereon. Alternatively, byproduct and spent process fluid may be released through at least one perforation 302 performing as a drain formed through pad base 310 and/or the platen assembly 330. The consistent electrochemical activity may provide a higher removal rate, and/or an improved consistency in the removal rate, thus decreasing process time and increasing throughput.
  • Figure 6 depicts another embodiment of a pad assembly 600 with fluid flow assist element defined in a pad base 614.
  • the pad base 614 has a plurality of channels 602 build into the upper surface of the pad base 614 to serve as fluid assist element.
  • a portion of the channels 602 built in the pad base 614 have an opening exposed to apertures formed in the first and the second conductive layers 608, 604.
  • another potion of the channels 616 formed underneath the second conductive layer 604 is laterally coupled to a second end of the apertures formed through the second conductive layer 604.
  • the channels 702 may be build into the platen assembly 714 as needed. It is noted that the configuration, distribution, numbers, sides, and shapes of the channels in the present invention may be varied as needed.
  • an apparatus with fluid flow assist element for electrochemical mechanical polishing is provided in this invention.
  • the fluid flow assist element facilitates the dynamic flow and circulation of the process fluid, thereby advantageously maintaining a stabile electrochemical activity in the system and a better control of the consumable parts maintenance.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)

Abstract

L'invention concerne un appareil et un procédé permettant d'effectuer un traitement électrochimique et mécanique à l'aide d'éléments facilitant un écoulement fluidique. Dans un mode de réalisation de l'invention, l'appareil comprend une première couche conductrice présentant une surface supérieure conçue pour être en contact avec un substrat, une seconde couche conductrice située sous la première couche conductrice, une couche isolante située entre les couches conductrices, et une pluralité d'ouvertures, chaque ouverture présentant une première extrémité traversant la première couche conductrice, et une seconde extrémité traversant la seconde couche conductrice, les secondes extrémités d'au moins deux ouvertures étant latéralement reliées par un canal.
PCT/US2006/061748 2006-01-05 2006-12-07 Appareil et procédé permettant d'effectuer un traitement électrochimique et mécanique à l'aide d'éléments facilitant un écoulement fluidique WO2007111729A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008549519A JP2009522809A (ja) 2006-01-05 2006-12-07 流量アシスト素子による電気化学機械的処理のための装置及び方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/327,527 US20070153453A1 (en) 2006-01-05 2006-01-05 Fully conductive pad for electrochemical mechanical processing
US11/327,527 2006-01-05
US11/431,231 2006-05-10
US11/431,231 US20070151867A1 (en) 2006-01-05 2006-05-10 Apparatus and a method for electrochemical mechanical processing with fluid flow assist elements

Publications (2)

Publication Number Publication Date
WO2007111729A2 true WO2007111729A2 (fr) 2007-10-04
WO2007111729A3 WO2007111729A3 (fr) 2008-10-02

Family

ID=38541594

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/061748 WO2007111729A2 (fr) 2006-01-05 2006-12-07 Appareil et procédé permettant d'effectuer un traitement électrochimique et mécanique à l'aide d'éléments facilitant un écoulement fluidique

Country Status (1)

Country Link
WO (1) WO2007111729A2 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040163950A1 (en) * 2003-02-25 2004-08-26 Ismail Emesh Planar plating apparatus
US20050274627A1 (en) * 2004-06-10 2005-12-15 Cabot Microelectronics Corporation Electrochemical-mechanical polishing system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040163950A1 (en) * 2003-02-25 2004-08-26 Ismail Emesh Planar plating apparatus
US20050274627A1 (en) * 2004-06-10 2005-12-15 Cabot Microelectronics Corporation Electrochemical-mechanical polishing system

Also Published As

Publication number Publication date
WO2007111729A3 (fr) 2008-10-02

Similar Documents

Publication Publication Date Title
US20070151867A1 (en) Apparatus and a method for electrochemical mechanical processing with fluid flow assist elements
US6776693B2 (en) Method and apparatus for face-up substrate polishing
KR200331354Y1 (ko) 전기화학적 기계적 연마를 위한 전도성 연마 부품
US7678245B2 (en) Method and apparatus for electrochemical mechanical processing
JP5916617B2 (ja) ブラシコンディショニングおよびパッドコンディショニングのための装置および方法
US7520968B2 (en) Conductive pad design modification for better wafer-pad contact
US20030213703A1 (en) Method and apparatus for substrate polishing
US7842169B2 (en) Method and apparatus for local polishing control
US20070135024A1 (en) Polishing pad and polishing apparatus
US20070227901A1 (en) Temperature control for ECMP process
US6613200B2 (en) Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform
US20060070872A1 (en) Pad design for electrochemical mechanical polishing
US7815787B2 (en) Electrolyte retaining on a rotating platen by directional air flow
US20090061743A1 (en) Method of soft pad preparation to reduce removal rate ramp-up effect and to stabilize defect rate
US20080035474A1 (en) Apparatus for electroprocessing a substrate with edge profile control
US20040072445A1 (en) Effective method to improve surface finish in electrochemically assisted CMP
WO2007094869A2 (fr) Procédé électrochimique de conditionnement d'un tampon de polissage ecmp
US20080277787A1 (en) Method and pad design for the removal of barrier material by electrochemical mechanical processing
US8012000B2 (en) Extended pad life for ECMP and barrier removal
WO2007111729A2 (fr) Appareil et procédé permettant d'effectuer un traitement électrochimique et mécanique à l'aide d'éléments facilitant un écoulement fluidique
US20080293343A1 (en) Pad with shallow cells for electrochemical mechanical processing
JP5675626B2 (ja) 研磨パッド端部の延伸
US7699972B2 (en) Method and apparatus for evaluating polishing pad conditioning
EP1648658A2 (fr) Cabine, systeme et article pour le traitement electrochimiomecanique
TW200401357A (en) Web pad design for chemical mechanical polishing

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 06850248

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2008549519

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06850248

Country of ref document: EP

Kind code of ref document: A2