[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

WO2007144590A1 - Nanostructured systems and a method of manufacture of the same - Google Patents

Nanostructured systems and a method of manufacture of the same Download PDF

Info

Publication number
WO2007144590A1
WO2007144590A1 PCT/GB2007/002157 GB2007002157W WO2007144590A1 WO 2007144590 A1 WO2007144590 A1 WO 2007144590A1 GB 2007002157 W GB2007002157 W GB 2007002157W WO 2007144590 A1 WO2007144590 A1 WO 2007144590A1
Authority
WO
WIPO (PCT)
Prior art keywords
pores
substance
nanostructured system
approximately
nanostructured
Prior art date
Application number
PCT/GB2007/002157
Other languages
French (fr)
Inventor
Robert James Pollard
Robert Morrison Bowman
John Martin Gregg
Anatoly Zayats
Gregory Wurtz
Paul Evans
Original Assignee
The Queen's University Of Belfast
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Queen's University Of Belfast filed Critical The Queen's University Of Belfast
Publication of WO2007144590A1 publication Critical patent/WO2007144590A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes

Definitions

  • the invention relates to nanostructured systems and a method for the manufacture of the same.
  • a nanostructured system comprising a first structure, and a second structure attached to the first structure, the second structure comprising a first material containing one or more pores, and a second material comprising one or more elements, wherein the or at least some of the pores contain an element of the second material and a space between at least a part of the element of the second material and at least a part of the pore.
  • the or the at least some of the pores may contain a space between substantially all of the element of the second material and the pore.
  • the or each or some of the spaces may be at least partially filled with at least one substance.
  • the nanostructured system may then act as, for example, a sensor.
  • the substance can be solid, liquid or gas.
  • the substance may be, for example, air.
  • the substance may comprise, for example, one or more molecules.
  • the substance may comprise, for example, one or more nanoparticles.
  • the substance may be, for example, a bio-substance.
  • the nanostructured system may then act as a biosensor.
  • the substance may be, for example, a substance capable of a non linear optical response.
  • the nanostructured system may then act as a photonic sensor or an optical transistor.
  • the substance may be, for example, a substance capable of stimulation.
  • the stimulation may comprise, for example, optical stimulation.
  • the nanostructured system may then act as a laser.
  • the stimulation may comprise mechanical stimulation, and/or electrical stimulation, and/or magnetic stimulation.
  • the nanostructured system may then act as an electromechanical actuator.
  • the first material may comprise the same material as the second material.
  • the first material may comprise a different material from the second material.
  • the or each or some of the elements of the second material may be elongate in shape.
  • the or each or some of the elongate elements of the second material may be oriented within a pore with a major axis of the element substantially perpendicular to the first structure.
  • the or each or some of the elongate elements of the second material may comprise a wire of the second material.
  • the or each or some of the elongate elements may be substantially cylindrical in shape.
  • the or each or some of the elongate elements may be substantially conical in shape.
  • the or each or some of the elongate elements may have a shape comprising two or more sides.
  • the or each or some of the elongate elements may be substantially solid.
  • the or each or some of the elongate elements may be substantially hollow.
  • the or each or some of the hollow elongate elements may be at least partially filled with at least one substance.
  • the substance can be solid, liquid or gas.
  • the substance may be, for example, air.
  • the substance may comprise, for example, one or more molecules.
  • the substance may comprise, for example, one or more nanoparticles.
  • the substance may be, for example, a bio-substance.
  • the nanostructured system may then act as a biosensor.
  • the substance may be, for example, a substance capable of a non linear optical response.
  • the nanostructured system may then act as a photonic sensor or an optical transistor.
  • the substance may be, for example, a substance capable of stimulation.
  • the stimulation may comprise, for example, optical stimulation.
  • the nanostructured system may then act as a laser.
  • the stimulation may comprise mechanical stimulation, and/or electrical stimulation, and/or magnetic stimulation.
  • the nanostructured system may then act as an electromechanical actuator.
  • the or each or some of the elements of the second material may comprise a conductive material.
  • the or each or some of the elements of the second material may comprise a metallic material, for example, any of silver, gold, cobalt, nickel, platinum, iron, palladium, copper or combinations thereof .
  • the or each or some of the elements of the second material may comprise an insulator material, for example any of Ta 2 O 5 , SiO 2 , AI 2 O 3 , BaTiO 3 , PZT, SrTiO 3 .
  • the or each or some of the elements of the second material may comprise a semiconductor material, for example, any of gallium, GaN, ZnO, InO, silicon, TiO 2 , carbon nanostructures or combinations thereof.
  • the or each or some of the elements of the second material may comprise a first end which is attached to the first structure.
  • the first end of the or each or some of the elements of the second material may be in electrically contact with the first structure.
  • the or each or some of the elements of the second material may have a width in the region of approximately 2nm to approximately 10OOnm, for example approximately 10nm to approximately 100nm.
  • the or each or some of the elements of the second material may have a length in the region of approximately 2nm to approximately 50 micrometres, for example approximately 2nm to approximately 2 micrometres, for example approximately 2nm to approximately 500nm.
  • the second structure may comprise one or more layers.
  • the or each or some of the layers may comprise a first material containing one or more pores and one or more elements of a second material, the or at least some of the pores containing an element of the second material and a space between at least a part of the element of the second material and at least a part of the pore.
  • the second structure may have a thickness in the region of " lOOnm to 50 micrometres.
  • the or each or some of the pores of the first material may have, for example, a substantially cylindrical shape, or a shape comprising two or more sides.
  • the or each or some of the pores of the first material may have a width in the region of approximately 2nm to approximately " lOOOnm, for example approximately 10nm to approximately 100nm.
  • lOOOnm a width in the region of approximately 2nm to approximately " lOOOnm, for example approximately 10nm to approximately 100nm.
  • these may have a separation in the region of approximately 2nm to approximately 1000nm, for example approximately 20nm to approximately 500nm.
  • the first material of the second structure may comprise an insulator material.
  • the insulator material may be formed by anodisation of a metallic material, for example any of alumina, TiO 2 , Ta 2 O 5 .
  • the first material may comprise a semiconductor material, for example porous silicon.
  • the first material may comprise a metallic material.
  • the first structure may comprise one or more layers. When the first structure comprises two or more layers, these may be attached together.
  • the or each layer may be at least substantially transparent to electromagnetic radiation.
  • the or each layer may comprise conductive material.
  • the or each layer may comprise a metallic conductive material, for example any of aluminium, tantalum, platinum, iridium, SrRuO 3 , gold, or combinations thereof.
  • the or each layer may act as an electrode.
  • the first structure may have a thickness in the region of approximately 1 nm to approximately " lOOOnm.
  • the nanostructured system may further comprise a third structure.
  • the third structure may be attached to the first structure.
  • the third structure may act as a substrate for the nanostructured system, providing a mechanical support for the nanostructured system.
  • the third structure may comprise one or more layers.
  • the third structure may comprise silicon.
  • the third structure may comprise a glass material.
  • a method of manufacturing a nanostructured system comprising the steps of: forming a first structure, and forming a second structure attached to the first structure, comprising forming a first material containing one or more pores on a surface of the first structure, placing an element of a second material in the or at least some of the pores, and treating the first material to remove material from the or the at least some of the pores to provide a space between at least a part of the element of the second material and at least a part of the pore.
  • the first material of the second structure may comprise an insulator material.
  • Forming the insulator first material on the surface of the first structure may comprise placing at least one layer of conductive material on the first structure, and treating the layer of conductive material to form the insulator material. Treating the layer of conductive material may comprise anodisation of the conductive material to form the insulator material. Anodisation of the conductive material may comprise electrochemical growth of the insulator material.
  • the layer of conductive material may comprise aluminium, which may be treated by. anodisation to form the insulator material comprising alumina.
  • Treating the layer of conductive material to form the insulator material may also cause formation of the one or more pores in the insulator material.
  • the one or more pores may form along a growth direction of the insulator material.
  • the one or more pores may have a length which is controlled by the thickness of the layer of conductive material.
  • the one or more pores may have a size and separation which is controlled by choosing conditions for the treating of the layer of conductive material.
  • the or each or some of the pores of the insulator material may have, for example, a substantially cylindrical shape, or a shape comprising two or more sides.
  • the or each or some of the pores of insulator material may have a width in the region of approximately 2nm to approximately 1000nm, for example approximately 10nm to approximately 100nm.
  • these may have a separation in the region of approximately 2nm to approximately 1000nm, for example approximately 20nm to approximately 500nm.
  • Treating the layer of conductive material to form the insulator material may cause formation of a plurality of pores in the insulator material, which pores are arranged in a pattern of pores which is at least partially dictated by one or more characteristics of the layer of conductive material, for example the surface topography and thickness of the material.
  • the pattern may approximate a hexagonal pattern.
  • Treating the layer of conductive material to form the insulator material may cause formation of a plurality of pores in the insulator material, which pores are arranged in a pre-determined pattern of pores.
  • the predetermined pattern of pores may be a regular or irregular pattern of pores. This may be achieved by processing the layer of conductive material prior to treatment thereof to form the insulator material.
  • the processing may comprise multi-stage anodisation of the layer of conductive material.
  • the processing may comprise texturing the layer of conductive material. Texturing may, for example, comprise imprinting the layer of conductive material or lithographic treatment of the layer of conductive material.
  • Formation of the one or more pores in the insulator material may further comprise a process to extend the or each pore to reach the first structure. This may involve a milling process, for example an argon ion milling process, or a chemical etching process.
  • An element of the second material may be placed in the or at least some of the pores of the insulator material by, for example, an electro-deposition method, or a physical vapour deposition method, or a chemical vapour deposition method, or a chemical solution deposition method.
  • the or each or some of the elements of the second material may be elongate in shape.
  • the or each or some of the elongate elements of the second material may be oriented within a pore with a major axis of the element substantially perpendicular to the first structure.
  • the or each or some of the elements of the second material may comprise a wire of the second material.
  • the or each or some of the wires may be substantially cylindrical in shape.
  • the or each or some of the wires may be processed to be substantially conical in shape, or comprise a shape having two or more sides.
  • the or each or some of the wires may be substantially solid.
  • the or each or some of the wires may be substantially hollow.
  • the substance can be solid, liquid or gas.
  • the substance may be, for example, air.
  • the substance may comprise, for example, one or more molecules.
  • the substance may comprise, for example, one or more nanoparticles.
  • the substance may be, for example, a bio-substance.
  • the nanostructured system may then act as a biosensor.
  • the substance may be, for example, a substance capable of a non linear optical response.
  • the nanostructured system may then act as a photonic sensor or an optical transistor.
  • the substance may be, for example, a substance capable of stimulation.
  • the stimulation may comprise, for example, optical stimulation.
  • the nanostructured system may then act as a laser.
  • the stimulation may comprise mechanical stimulation, and/or electrical stimulation, and/or magnetic stimulation.
  • the nanostructured system may then act as an electromechanical actuator.
  • the or each or some of the elements of the second material may comprise a first end which is attached to the first structure.
  • the first end of the or each or some of the elements of the second material may be in electrically contact with the first structure.
  • the or each or some of the elements of the second material may have a width in the region of approximately 2nm to approximately 1000nm, for example approximately 10nm to approximately 100nm.
  • the or each or some of the elements of the second material may have a length in the region of approximately 2nm to approximately 50 micrometres, for example approximately 2nm to approximately 2 micrometres, for example approximately 2nm to approximately 500nm.
  • the or each or some of the elements of the second material may comprise a conductive material.
  • the or each or some of the elements of the second material may comprise a metallic material, for example, any of silver, gold, cobalt, nickel, platinum, iron, palladium, copper or combinations thereof.
  • the or each or some of the elements of the second material may comprise an insulator material, for example any of Ta 2 O 5 , SiO 2 , AI 2 O 3 , BaTiO 3 , PZT, SrTiO 3 .
  • the or each or some of the elements of the second material may comprise a semiconductor material, for example, any of gallium, GaN, ZnO, InO, silicon, TiO 2 , carbon nanostructures or combinations thereof.
  • Treating the layer of insulator material to remove material from the or the at least some of the pores may comprise etching insulator material containing the pore.
  • Etching the insulator material containing a pore may comprise channelling an etching substance along the element of the second material contained in the pore and etching outwards from the element of the second material.
  • the first structure may be formed on a substrate structure.
  • the first structure may be formed on the substrate structure by a deposition method, for example, a sputtering deposition method, or a PLD method, or an electrodeposition method, or an evaporation method, or a chemical method.
  • the method may further comprise at least partially filling the space contained in the or each or some of the pores with at least one substance.
  • the substance can be solid, liquid or gas.
  • the substance may be, for example, air.
  • the substance may comprise, for example, one or more molecules.
  • the substance may comprise, for example, one or more nanoparticles.
  • the substance may be, for example, a bio-substance.
  • the nanostructured system may then act as a biosensor.
  • the substance may be, for example, a substance capable of a non linear optical response.
  • the nanostructured system may then act as a photonic sensor or an optical transistor.
  • the substance may be, for example, a substance capable of stimulation.
  • the stimulation may comprise, for example, optical stimulation.
  • the nanostructured system may then act as a laser.
  • the stimulation may comprise mechanical stimulation, and/or electrical stimulation, and/or magnetic stimulation.
  • the nanostructured system may then act as an electromechanical actuator.
  • the architecture of the nanostructured system comprising the one or more pores containing an element of a second material and a space, opens up unique and new opportunities for passive and active devices containing a nanostructured system.
  • the method of manufacturing the nanostructured system provides for fast, easy and large-scale manufacturing of this new nanostructured system architecture.
  • a device comprising at least one nanostructured system according to the first aspect of the invention.
  • the device may comprise an electrode used to allow operation of the device.
  • the electrode may be patterned to allow selective addressing of a desired number of the elements of the second material of the second structure and the pores containing the elements of a nanostructured system.
  • the electrode may be patterned to comprise electrode elements having a surface area of approximately 500nm 2 to approximately 100 ⁇ m 2 .
  • Figure 1 is a schematic cross sectional representation of a nanostructured system according to the first aspect of the invention
  • Figure 2 is a schematic plan representation of the nanostructured system of Figure 1 .
  • Figure 3 is a schematic representation of the variation of a particular resonance of an optical signature for different substances of different refractive index.
  • Figures 1 and 2 show a nanostructured system 1 , comprising a first structure 2, a second structure 3, comprising a first, insulator, material 5, a plurality of pores 6, and a plurality of elements of a second, conductive, material 7.
  • the nanostructured system further comprises a substrate 4.
  • the first structure 2 comprises two layers, an approximately 5nm thick layer of gold conductive material, on top of a transparent approximately 10nm thick layer of Ta 2 O 5 .
  • the Ta 2 O 5 acts as an effective adhesion layer between the first structure 2 and the substrate 4.
  • the gold layer of the first structure 2 acts as an electrode to enable the subsequent growth of the elements of conductive material 7 of the second structure 3.
  • the first structure 2 is formed on the substrate 4, by a deposition process.
  • the substrate 4 provides a mechanical support for the first and second structures.
  • the substrate 4 comprises SiO 2 .
  • the second structure 3 comprises insulator material 5, formed from an approximately 500nm thick layer of alumina.
  • the insulator material 5 contains a plurality of pores 6.
  • Each pore 6 is cylindrical in shape, and has a length of approximately 500nm and a diameter of approximately 35nm. The pore separation measured as the pore centre to centre distance is approximately 100nm.
  • Each pore 6 contains an element of conductive material in the form of a gold wire 7, and a space 8 between substantially all of the wire 7 and the pore 6.
  • Each wire is cylindrical in shape, and has a length of approximately 400nm and a diameter of approximately 15nm.
  • Each space 8 comprises a tubular shaped space between a wire 7 and a pore 6. Each tubular space has a length of approximately 400nm, an inner diameter of approximately 15nm and an outer diameter of approximately 35nm.
  • the second structure 3 is formed on a surface of the first structure 2 by firstly depositing a layer of aluminium on the surface of the first structure 2. The aluminium layer is then treated by anodisation, to form the alumina insulator material 5. This comprises electrochemical growth of the alumina insulator material 5.
  • the anodisation process also causes formation of the plurality of pores 6 in the alumina insulator material 5.
  • the pores 6 will form along a growth direction of the alumina insulator material.
  • the length of the pores 6 is controlled by the thickness of the layer of aluminium deposited on the surface of the first structure 2.
  • the diameter and separation of the pores 6 is controlled by choosing conditions for the anodisation of the aluminium layer. This will create at least a semi-regular assembly of pores 6 in the alumina insulator material 5.
  • the pores 6 may extend through the whole thickness of the alumina insulator material 5, from the surface of the second structure 3 which is adjacent the first structure 2 to the 'free' surface of the second structure 3.
  • the alumina insulator material 5 is etched, using sodium hydroxide solution, to ensure that the pores 6 extend through the whole thickness thereof.
  • a gold wire 7 is then placed in each pore 6 of the alumina insulator material 5, by an electro-deposition method. Each wire 7 will at least substantially fill the width of each pore 6. The length of each wire 7 is tunable from a few nanometres to the length of each pore 6, in this embodiment a length of 400nm has been chosen. Each elongate wire 7 is oriented within a pore 6 with its major axis substantially perpendicular to the first structure 2.
  • the alumina insulator material 5 is then treated to remove material from each pore 6. This comprises etching portions of the alumina insulator material 5 containing each pore 6. For each pore, etching the alumina insulator material 5 containing each pore 6 comprises channelling a sodium hydroxide etching substance along the gold wire 7 in the pore 6, and etching outwards from the wire 7. This forms a space 8 between substantially all of each wire 7 and the pore 6 containing it.
  • Each space 8 may be filled, at least initially, with air. Subsequently, at least some of the spaces 8 may be filled with a substance, which allows the nanostructured system to adopt different functionalities. For example, the spaces 8 may be filled with different substances having different refractive indices.
  • the nanostructured system comprising each different substance will have a unique optical signature.
  • Figure 3 describes the variation of a particular resonance of the optical signature for different substances of different refractive index. This figure illustrates the variation of the particular resonance of the optical signature, for a first space outer diameter of approximately 35nm and a second space outer diameter of approximately 20nm.
  • the size of the spaces 8 determines, for the optical signature resonance, both the wavelength at which the resonance occurs, and its sensitivity to changes in the refractive index of the substance filling the spaces 8.
  • the nanostructured system of the first embodiment of the invention may be used in an optical transistor. This can be used for radiation modulation and switching.
  • the optical transistor comprises the nanostructured system, which contains a substance in the spaces 8 which exhibits a non linear refractive Kerr effect, first and second lasers, and a detector.
  • the first laser is a control laser, and is used to irradiate the nanostructured system to change the refractive index of the Kerr substance.
  • the second laser is a signal laser, and the intensity of a signal thereof transmitted through the nanostructured system is monitored by the detector. Varying the incident intensity of the control laser radiation, will change the refractive index of the Kerr substance. This will modulate the wavelength position of the optical resonance of the nanostructured system, which, in turn, modulates the transmission of radiation at the wavelength of the second laser.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Molecular Biology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)

Abstract

A nanostructured system (1) comprising a first structure (2), and a second structure (3) attached to the first structure, the second structure comprising a first material (5) containing one or more pores (6), and a second material (7) comprising one or more elements, wherein the or at least some of the pores (6) contain an element of the second material (7) and a space (8) between at least a part of the element of the second material and at least a part of the pore. The or the at least some of the pores may contain a space between substantially the entire element of the second material and the pore. The or each or some of the spaces may be at least partially filled with at least one substance. The nanostructured system may then act as, for example, a sensor.

Description

Nanostructured Systems and a Method of manufacture of the same
The invention relates to nanostructured systems and a method for the manufacture of the same.
In recent years there has been an ever-increasing interest in the development of nanostructured systems, for a wide variety of applications for example biosensing, solar cells, nano-actuators. For these applications it is important to have extensive control over specific properties of the nanostructured system. Control has to be obtained over the geometry of the system, and the materials used and their architectural arrangement. Also key to a successful application of nanostructured systems is a cost effective manufacturing route. The invention seeks to address the issues of control and manufacture.
According to a first aspect of the present invention there is provided a nanostructured system comprising a first structure, and a second structure attached to the first structure, the second structure comprising a first material containing one or more pores, and a second material comprising one or more elements, wherein the or at least some of the pores contain an element of the second material and a space between at least a part of the element of the second material and at least a part of the pore.
The or the at least some of the pores may contain a space between substantially all of the element of the second material and the pore.
The or each or some of the spaces may be at least partially filled with at least one substance. The nanostructured system may then act as, for example, a sensor. The substance can be solid, liquid or gas. The substance may be, for example, air. The substance may comprise, for example, one or more molecules. The substance may comprise, for example, one or more nanoparticles. The substance may be, for example, a bio-substance. The nanostructured system may then act as a biosensor. The substance may be, for example, a substance capable of a non linear optical response. The nanostructured system may then act as a photonic sensor or an optical transistor. The substance may be, for example, a substance capable of stimulation. The stimulation may comprise, for example, optical stimulation. The nanostructured system may then act as a laser. The stimulation may comprise mechanical stimulation, and/or electrical stimulation, and/or magnetic stimulation. The nanostructured system may then act as an electromechanical actuator.
The first material may comprise the same material as the second material. The first material may comprise a different material from the second material.
The or each or some of the elements of the second material may be elongate in shape. The or each or some of the elongate elements of the second material may be oriented within a pore with a major axis of the element substantially perpendicular to the first structure. The or each or some of the elongate elements of the second material may comprise a wire of the second material. The or each or some of the elongate elements may be substantially cylindrical in shape. The or each or some of the elongate elements may be substantially conical in shape. The or each or some of the elongate elements may have a shape comprising two or more sides. The or each or some of the elongate elements may be substantially solid. The or each or some of the elongate elements may be substantially hollow. The or each or some of the hollow elongate elements may be at least partially filled with at least one substance. The substance can be solid, liquid or gas. The substance may be, for example, air. The substance may comprise, for example, one or more molecules. The substance may comprise, for example, one or more nanoparticles. The substance may be, for example, a bio-substance. The nanostructured system may then act as a biosensor. The substance may be, for example, a substance capable of a non linear optical response. The nanostructured system may then act as a photonic sensor or an optical transistor. The substance may be, for example, a substance capable of stimulation. The stimulation may comprise, for example, optical stimulation. The nanostructured system may then act as a laser. The stimulation may comprise mechanical stimulation, and/or electrical stimulation, and/or magnetic stimulation. The nanostructured system may then act as an electromechanical actuator.
The or each or some of the elements of the second material may comprise a conductive material. The or each or some of the elements of the second material may comprise a metallic material, for example, any of silver, gold, cobalt, nickel, platinum, iron, palladium, copper or combinations thereof . The or each or some of the elements of the second material may comprise an insulator material, for example any of Ta2O5, SiO2, AI2O3, BaTiO3, PZT, SrTiO3. The or each or some of the elements of the second material may comprise a semiconductor material, for example, any of gallium, GaN, ZnO, InO, silicon, TiO2, carbon nanostructures or combinations thereof.
The or each or some of the elements of the second material may comprise a first end which is attached to the first structure. The first end of the or each or some of the elements of the second material may be in electrically contact with the first structure.
The or each or some of the elements of the second material may have a width in the region of approximately 2nm to approximately 10OOnm, for example approximately 10nm to approximately 100nm. The or each or some of the elements of the second material may have a length in the region of approximately 2nm to approximately 50 micrometres, for example approximately 2nm to approximately 2 micrometres, for example approximately 2nm to approximately 500nm.
The second structure may comprise one or more layers. The or each or some of the layers may comprise a first material containing one or more pores and one or more elements of a second material, the or at least some of the pores containing an element of the second material and a space between at least a part of the element of the second material and at least a part of the pore. The second structure may have a thickness in the region of "lOOnm to 50 micrometres.
The or each or some of the pores of the first material may have, for example, a substantially cylindrical shape, or a shape comprising two or more sides. The or each or some of the pores of the first material may have a width in the region of approximately 2nm to approximately "lOOOnm, for example approximately 10nm to approximately 100nm. When the second structure contains two or more pores, these may have a separation in the region of approximately 2nm to approximately 1000nm, for example approximately 20nm to approximately 500nm.
The first material of the second structure may comprise an insulator material. The insulator material may be formed by anodisation of a metallic material, for example any of alumina, TiO2, Ta2O5. The first material may comprise a semiconductor material, for example porous silicon. The first material may comprise a metallic material. The first structure may comprise one or more layers. When the first structure comprises two or more layers, these may be attached together. The or each layer may be at least substantially transparent to electromagnetic radiation. The or each layer may comprise conductive material. The or each layer may comprise a metallic conductive material, for example any of aluminium, tantalum, platinum, iridium, SrRuO3, gold, or combinations thereof. The or each layer may act as an electrode. The first structure may have a thickness in the region of approximately 1 nm to approximately "lOOOnm.
The nanostructured system may further comprise a third structure. The third structure may be attached to the first structure. The third structure may act as a substrate for the nanostructured system, providing a mechanical support for the nanostructured system. The third structure may comprise one or more layers. The third structure may comprise silicon. The third structure may comprise a glass material.
According to a second aspect of the present invention there is provided a method of manufacturing a nanostructured system, comprising the steps of: forming a first structure, and forming a second structure attached to the first structure, comprising forming a first material containing one or more pores on a surface of the first structure, placing an element of a second material in the or at least some of the pores, and treating the first material to remove material from the or the at least some of the pores to provide a space between at least a part of the element of the second material and at least a part of the pore. The first material of the second structure may comprise an insulator material. Forming the insulator first material on the surface of the first structure may comprise placing at least one layer of conductive material on the first structure, and treating the layer of conductive material to form the insulator material. Treating the layer of conductive material may comprise anodisation of the conductive material to form the insulator material. Anodisation of the conductive material may comprise electrochemical growth of the insulator material. The layer of conductive material may comprise aluminium, which may be treated by. anodisation to form the insulator material comprising alumina.
Treating the layer of conductive material to form the insulator material may also cause formation of the one or more pores in the insulator material. The one or more pores may form along a growth direction of the insulator material. The one or more pores may have a length which is controlled by the thickness of the layer of conductive material. The one or more pores may have a size and separation which is controlled by choosing conditions for the treating of the layer of conductive material.
The or each or some of the pores of the insulator material may have, for example, a substantially cylindrical shape, or a shape comprising two or more sides. The or each or some of the pores of insulator material may have a width in the region of approximately 2nm to approximately 1000nm, for example approximately 10nm to approximately 100nm. When the second structure contains two or more pores, these may have a separation in the region of approximately 2nm to approximately 1000nm, for example approximately 20nm to approximately 500nm.
Treating the layer of conductive material to form the insulator material may cause formation of a plurality of pores in the insulator material, which pores are arranged in a pattern of pores which is at least partially dictated by one or more characteristics of the layer of conductive material, for example the surface topography and thickness of the material. The pattern may approximate a hexagonal pattern.
Treating the layer of conductive material to form the insulator material may cause formation of a plurality of pores in the insulator material, which pores are arranged in a pre-determined pattern of pores. The predetermined pattern of pores may be a regular or irregular pattern of pores. This may be achieved by processing the layer of conductive material prior to treatment thereof to form the insulator material. The processing may comprise multi-stage anodisation of the layer of conductive material. The processing may comprise texturing the layer of conductive material. Texturing may, for example, comprise imprinting the layer of conductive material or lithographic treatment of the layer of conductive material.
Formation of the one or more pores in the insulator material may further comprise a process to extend the or each pore to reach the first structure. This may involve a milling process, for example an argon ion milling process, or a chemical etching process.
An element of the second material may be placed in the or at least some of the pores of the insulator material by, for example, an electro-deposition method, or a physical vapour deposition method, or a chemical vapour deposition method, or a chemical solution deposition method.
The or each or some of the elements of the second material may be elongate in shape. The or each or some of the elongate elements of the second material may be oriented within a pore with a major axis of the element substantially perpendicular to the first structure. The or each or some of the elements of the second material may comprise a wire of the second material. The or each or some of the wires may be substantially cylindrical in shape. The or each or some of the wires may be processed to be substantially conical in shape, or comprise a shape having two or more sides. The or each or some of the wires may be substantially solid. The or each or some of the wires may be substantially hollow. The substance can be solid, liquid or gas. The substance may be, for example, air. The substance may comprise, for example, one or more molecules. The substance may comprise, for example, one or more nanoparticles. The substance may be, for example, a bio-substance. The nanostructured system may then act as a biosensor. The substance may be, for example, a substance capable of a non linear optical response. The nanostructured system may then act as a photonic sensor or an optical transistor. The substance may be, for example, a substance capable of stimulation. The stimulation may comprise, for example, optical stimulation. The nanostructured system may then act as a laser. The stimulation may comprise mechanical stimulation, and/or electrical stimulation, and/or magnetic stimulation. The nanostructured system may then act as an electromechanical actuator.
The or each or some of the elements of the second material may comprise a first end which is attached to the first structure. The first end of the or each or some of the elements of the second material may be in electrically contact with the first structure.
The or each or some of the elements of the second material may have a width in the region of approximately 2nm to approximately 1000nm, for example approximately 10nm to approximately 100nm. The or each or some of the elements of the second material may have a length in the region of approximately 2nm to approximately 50 micrometres, for example approximately 2nm to approximately 2 micrometres, for example approximately 2nm to approximately 500nm.
The or each or some of the elements of the second material may comprise a conductive material. The or each or some of the elements of the second material may comprise a metallic material, for example, any of silver, gold, cobalt, nickel, platinum, iron, palladium, copper or combinations thereof. The or each or some of the elements of the second material may comprise an insulator material, for example any of Ta2O5, SiO2, AI2O3, BaTiO3, PZT, SrTiO3. The or each or some of the elements of the second material may comprise a semiconductor material, for example, any of gallium, GaN, ZnO, InO, silicon, TiO2, carbon nanostructures or combinations thereof.
Treating the layer of insulator material to remove material from the or the at least some of the pores may comprise etching insulator material containing the pore. Etching the insulator material containing a pore may comprise channelling an etching substance along the element of the second material contained in the pore and etching outwards from the element of the second material.
The first structure may be formed on a substrate structure. The first structure may be formed on the substrate structure by a deposition method, for example, a sputtering deposition method, or a PLD method, or an electrodeposition method, or an evaporation method, or a chemical method.
The method may further comprise at least partially filling the space contained in the or each or some of the pores with at least one substance. The substance can be solid, liquid or gas. The substance may be, for example, air. The substance may comprise, for example, one or more molecules. The substance may comprise, for example, one or more nanoparticles. The substance may be, for example, a bio-substance. The nanostructured system may then act as a biosensor. The substance may be, for example, a substance capable of a non linear optical response. The nanostructured system may then act as a photonic sensor or an optical transistor. The substance may be, for example, a substance capable of stimulation. The stimulation may comprise, for example, optical stimulation. The nanostructured system may then act as a laser. The stimulation may comprise mechanical stimulation, and/or electrical stimulation, and/or magnetic stimulation. The nanostructured system may then act as an electromechanical actuator.
The architecture of the nanostructured system comprising the one or more pores containing an element of a second material and a space, opens up unique and new opportunities for passive and active devices containing a nanostructured system. A wide selection of the first material, the second material, and a substance placed in a space between these materials, can be made which allows the nanostructured system to exhibit a variety of functionalities in different applications. The method of manufacturing the nanostructured system, provides for fast, easy and large-scale manufacturing of this new nanostructured system architecture.
According to a third aspect of the invention there is provided a device comprising at least one nanostructured system according to the first aspect of the invention.
The device may comprise an electrode used to allow operation of the device. The electrode may be patterned to allow selective addressing of a desired number of the elements of the second material of the second structure and the pores containing the elements of a nanostructured system. The electrode may be patterned to comprise electrode elements having a surface area of approximately 500nm2 to approximately 100μm2.
An embodiment of the invention will now be described, by way of example only, with reference to the accompanying drawings, in which
Figure 1 is a schematic cross sectional representation of a nanostructured system according to the first aspect of the invention;
Figure 2 is a schematic plan representation of the nanostructured system of Figure 1 , and
Figure 3 is a schematic representation of the variation of a particular resonance of an optical signature for different substances of different refractive index.
Figures 1 and 2 show a nanostructured system 1 , comprising a first structure 2, a second structure 3, comprising a first, insulator, material 5, a plurality of pores 6, and a plurality of elements of a second, conductive, material 7. The nanostructured system further comprises a substrate 4.
The first structure 2 comprises two layers, an approximately 5nm thick layer of gold conductive material, on top of a transparent approximately 10nm thick layer of Ta2O5. The Ta2O5 acts as an effective adhesion layer between the first structure 2 and the substrate 4. The gold layer of the first structure 2 acts as an electrode to enable the subsequent growth of the elements of conductive material 7 of the second structure 3. The first structure 2 is formed on the substrate 4, by a deposition process. The substrate 4 provides a mechanical support for the first and second structures. The substrate 4 comprises SiO2.
The second structure 3 comprises insulator material 5, formed from an approximately 500nm thick layer of alumina. The insulator material 5 contains a plurality of pores 6. Each pore 6 is cylindrical in shape, and has a length of approximately 500nm and a diameter of approximately 35nm. The pore separation measured as the pore centre to centre distance is approximately 100nm. Each pore 6 contains an element of conductive material in the form of a gold wire 7, and a space 8 between substantially all of the wire 7 and the pore 6. Each wire is cylindrical in shape, and has a length of approximately 400nm and a diameter of approximately 15nm. Each space 8 comprises a tubular shaped space between a wire 7 and a pore 6. Each tubular space has a length of approximately 400nm, an inner diameter of approximately 15nm and an outer diameter of approximately 35nm.
The second structure 3 is formed on a surface of the first structure 2 by firstly depositing a layer of aluminium on the surface of the first structure 2. The aluminium layer is then treated by anodisation, to form the alumina insulator material 5. This comprises electrochemical growth of the alumina insulator material 5.
The anodisation process also causes formation of the plurality of pores 6 in the alumina insulator material 5. The pores 6 will form along a growth direction of the alumina insulator material. The length of the pores 6 is controlled by the thickness of the layer of aluminium deposited on the surface of the first structure 2. The diameter and separation of the pores 6 is controlled by choosing conditions for the anodisation of the aluminium layer. This will create at least a semi-regular assembly of pores 6 in the alumina insulator material 5.
The pores 6 may extend through the whole thickness of the alumina insulator material 5, from the surface of the second structure 3 which is adjacent the first structure 2 to the 'free' surface of the second structure 3. However, in this case, the alumina insulator material 5 is etched, using sodium hydroxide solution, to ensure that the pores 6 extend through the whole thickness thereof.
A gold wire 7 is then placed in each pore 6 of the alumina insulator material 5, by an electro-deposition method. Each wire 7 will at least substantially fill the width of each pore 6. The length of each wire 7 is tunable from a few nanometres to the length of each pore 6, in this embodiment a length of 400nm has been chosen. Each elongate wire 7 is oriented within a pore 6 with its major axis substantially perpendicular to the first structure 2.
The alumina insulator material 5 is then treated to remove material from each pore 6. This comprises etching portions of the alumina insulator material 5 containing each pore 6. For each pore, etching the alumina insulator material 5 containing each pore 6 comprises channelling a sodium hydroxide etching substance along the gold wire 7 in the pore 6, and etching outwards from the wire 7. This forms a space 8 between substantially all of each wire 7 and the pore 6 containing it.
Each space 8 may be filled, at least initially, with air. Subsequently, at least some of the spaces 8 may be filled with a substance, which allows the nanostructured system to adopt different functionalities. For example, the spaces 8 may be filled with different substances having different refractive indices. The nanostructured system comprising each different substance will have a unique optical signature. Figure 3 describes the variation of a particular resonance of the optical signature for different substances of different refractive index. This figure illustrates the variation of the particular resonance of the optical signature, for a first space outer diameter of approximately 35nm and a second space outer diameter of approximately 20nm.
In such nanostructured systems, the size of the spaces 8 determines, for the optical signature resonance, both the wavelength at which the resonance occurs, and its sensitivity to changes in the refractive index of the substance filling the spaces 8.
The nanostructured system of the first embodiment of the invention may be used in an optical transistor. This can be used for radiation modulation and switching. The optical transistor comprises the nanostructured system, which contains a substance in the spaces 8 which exhibits a non linear refractive Kerr effect, first and second lasers, and a detector. The first laser is a control laser, and is used to irradiate the nanostructured system to change the refractive index of the Kerr substance. The second laser is a signal laser, and the intensity of a signal thereof transmitted through the nanostructured system is monitored by the detector. Varying the incident intensity of the control laser radiation, will change the refractive index of the Kerr substance. This will modulate the wavelength position of the optical resonance of the nanostructured system, which, in turn, modulates the transmission of radiation at the wavelength of the second laser.

Claims

1. A nanostructured system comprising a first structure, and a second structure attached to the first structure, the second structure comprising a first material containing one or more pores, and a second material comprising one or more elements, wherein the or at least some of the pores contain an element of the second material and a space between at least a part of the element of the second material and at least a part of the pore.
2. A nanostructured system according to claim 1 , in which the or at least some of the pores contain a space between substantially all of the element of the second material and the pore.
3. A nanostructured system according to claim 1 or claim 2, in which the or each or some of the spaces are at least partially filled with at least one substance.
4. A nanostructured system according to claim 3, in which the substance is air.
5. A nanostructured system according to claim 3, in which the substance comprises one or more nanoparticles.
6. A nanostructured system according to claim 3, in which the substance is a bio-substance.
7. A nanostructured system according to claim 3, in which the substance comprises a substance capable of a non linear optical response.
8. A nanostructured system as claimed in claim 3, in which the substance comprises a substance capable of any of optical stimulation, mechanical stimulation, electrical stimulation, magnetic stimulation.
9. A nanostructured system according to any preceding claim, in which the first material comprises the same material as the second material.
10. A nanostructured system according to any of claims 1 to 8, in which the first material comprises a different material from the second material.
11. A nanostructured system according to any preceding claim, in which the or each or some of the elements of the second material are elongate in shape, and are oriented within a pore with a major axis of the element substantially perpendicular to the first structure.
12. A nanostructured system according to claim 11 , in which the or each or some of the elongate elements are substantially cylindrical in shape.
13. A nanostructured system according to claim 11 , in which the or each or some of the elongate elements are substantially conical in shape.
14. A nanostructured system according to any of claims 11 to13, in which the or each or some of the elongate elements are hollow and are at least partially filled with at least one substance.
15. A nanostructured system according to claim 14, in which the substance comprises one or more nanoparticles.
16. A nanostructured system according to claim 14, in which the substance is a bio-substance.
17. A nanostructured system according to claim 14, in which the substance is a substance capable of a non linear optical response.
18. A nanostructured system according to claim 14, in which the substance is a substance capable of any of optical stimulation, mechanical stimulation, electrical stimulation, magnetic stimulation.
19. A nanostructured system according to any preceding claim, in which the or each or some of the elements of the second material comprise a conductive material.
20. A nanostructured system according to any of claims 1 to 18, in which the or each or some of the elements of the second material comprise an insulator material.
21. A nanostructured system according to any of claims 1 to 18, in which the or each or some of the elements of the second material comprise a semiconductor material.
22. A nanostructured system according to any preceding claim, in which the or each or some of the elements of the second material have a width in the region of approximately 2nm to approximately 10OOnm, and a length in the region of approximately 2nm to approximately 50 micrometres.
23. A nanostructured system according to any preceding claim, in which the second structure comprises one or more layers, and the or each or some of the layers comprise a first material containing one or more pores and one or more elements of a second material, the or at least some of the pores containing an element of the second material and a space between at least a part of the element of the second material and at least a part of the pore.
24. A nanostructured system according to any preceding claim, in which the or each or some of the pores of the first material have a width in the region of approximately 2nm to approximately 1000nm, and a separation in the region of approximately 2nm to approximately 1000nm.
25. A method of manufacturing a nanostructured system, comprising the steps of: forming a first structure, and forming a second structure attached to the first structure, comprising forming a first material containing one or more pores on a surface of the first structure, placing an element of a second material in the or at least some of the pores, and treating the first material to remove material from the or the at least some of the pores to provide a space between at least a part of the element of the second material and at least a part of the pore.
26. A method according to claim 25, in which the first material of the second structure comprises an insulator material, and forming the insulator first material on the surface of the first structure comprises placing at least one layer of conductive material on the first structure, and treating the layer of conductive material by anodisation to form the insulator material.
27. A method according to claim 26, in which treating the layer of conductive material to form the insulator material also causes formation of the one or more pores in the insulator material.
28. A method according to claim 27, in which the pores are arranged in a pattern of pores which is at least partially dictated by one or more characteristics of the layer of conductive material.
29. A method according to claim 27, in which the pores are arranged in a pre-determined pattern of pores.
30. A method according to claim 29, in which the pre-determined pattern of pores is achieved by texturing the layer of conductive material prior to treatment thereof to form the insulator material.
31. A method according to any of claims 25 to 30, in which an element of the second material is placed in the or at least some of the pores of the insulator material by a deposition method.
32. A method according to any of claims 25 to 31 , in which treating the layer of insulation material to remove material from the or the at least some of the pores comprises etching insulator material containing the pore.
33. A method according to claim 32 in which, etching the insulator material containing a pore comprises channelling an etching substance along the element of the second material contained in the pore and etching outwards from the element of the second material.
34. A method according to any of claims 25 to 33, which further comprises at least partially filling the space contained in the or each or some of the pores with at least one substance.
35. A device comprising at least one nanostructured system according to any of claims 1 to 24.
36. A device according to claim 35, which comprises an electrode used to allow operation of the device, which electrode is patterned to allow selective addressing of a desired number of the elements of the second material of the second structure and the pores containing the elements of a nanostructured system.
37. A device according to claim 36, in which the electrode is patterned to comprise electrode elements having a surface area of approximately
500nm2 to approximately 100μm2.
PCT/GB2007/002157 2006-06-12 2007-06-12 Nanostructured systems and a method of manufacture of the same WO2007144590A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0611557A GB0611557D0 (en) 2006-06-12 2006-06-12 Nanostructured systems and a method of manufacture of the same
GB0611557.0 2006-06-12

Publications (1)

Publication Number Publication Date
WO2007144590A1 true WO2007144590A1 (en) 2007-12-21

Family

ID=36745701

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2007/002157 WO2007144590A1 (en) 2006-06-12 2007-06-12 Nanostructured systems and a method of manufacture of the same

Country Status (2)

Country Link
GB (1) GB0611557D0 (en)
WO (1) WO2007144590A1 (en)

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0310029A2 (en) * 1987-09-28 1989-04-05 Noboru Tsuya Substrate for a magnetic disk and process for its production
WO1992019795A1 (en) * 1991-05-07 1992-11-12 Alcan International Limited Process for producing articles comprising anodized films exhibiting areas of different colour and the articles thus produced
US5470636A (en) * 1991-03-15 1995-11-28 Yamaha Corporation Magnetic recording medium and method of producing it
EP0951047A2 (en) * 1998-03-27 1999-10-20 Canon Kabushiki Kaisha Nanostructure, electron emitting device, carbon nanotube device, and method of producing the same
US20030001274A1 (en) * 2001-05-11 2003-01-02 Toru Den Structure having pores and its manufacturing method
WO2004040644A2 (en) * 2002-10-31 2004-05-13 Infineon Technologies Ag Memory cell, memory cell arrangement, structuring arrangement and method for production of a memory cell
EP1420414A1 (en) * 2002-11-15 2004-05-19 Samsung Electronics Co., Ltd. Nonvolatile memory device utilising vertical nanotube
EP1445601A2 (en) * 2003-01-30 2004-08-11 Fuji Photo Film Co., Ltd. Localized surface plasmon sensor chips, processes for producing the same, and sensors using the same
WO2004097894A2 (en) * 2002-08-28 2004-11-11 University Of Pittsburgh Self-organized nanopore arrays with controlled symmetry and order
US20050047244A1 (en) * 2003-03-28 2005-03-03 Nantero, Inc. Four terminal non-volatile transistor device
US20050121659A1 (en) * 2002-04-09 2005-06-09 Matsushita Electric Industrial Co., Ltd. Non-volatile memory and the fabrication method thereof
US20050271811A1 (en) * 2004-02-25 2005-12-08 The Queen's University Of Belfast Method of manufacturing nanostructure arrays
WO2006003620A1 (en) * 2004-06-30 2006-01-12 Koninklijke Philips Electronics N.V. Method for manufacturing an electric device with a layer of conductive material contacted by nanowire

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0310029A2 (en) * 1987-09-28 1989-04-05 Noboru Tsuya Substrate for a magnetic disk and process for its production
US5470636A (en) * 1991-03-15 1995-11-28 Yamaha Corporation Magnetic recording medium and method of producing it
WO1992019795A1 (en) * 1991-05-07 1992-11-12 Alcan International Limited Process for producing articles comprising anodized films exhibiting areas of different colour and the articles thus produced
EP0951047A2 (en) * 1998-03-27 1999-10-20 Canon Kabushiki Kaisha Nanostructure, electron emitting device, carbon nanotube device, and method of producing the same
US20030001274A1 (en) * 2001-05-11 2003-01-02 Toru Den Structure having pores and its manufacturing method
US20050121659A1 (en) * 2002-04-09 2005-06-09 Matsushita Electric Industrial Co., Ltd. Non-volatile memory and the fabrication method thereof
WO2004097894A2 (en) * 2002-08-28 2004-11-11 University Of Pittsburgh Self-organized nanopore arrays with controlled symmetry and order
WO2004040644A2 (en) * 2002-10-31 2004-05-13 Infineon Technologies Ag Memory cell, memory cell arrangement, structuring arrangement and method for production of a memory cell
EP1420414A1 (en) * 2002-11-15 2004-05-19 Samsung Electronics Co., Ltd. Nonvolatile memory device utilising vertical nanotube
EP1445601A2 (en) * 2003-01-30 2004-08-11 Fuji Photo Film Co., Ltd. Localized surface plasmon sensor chips, processes for producing the same, and sensors using the same
US20050047244A1 (en) * 2003-03-28 2005-03-03 Nantero, Inc. Four terminal non-volatile transistor device
US20050271811A1 (en) * 2004-02-25 2005-12-08 The Queen's University Of Belfast Method of manufacturing nanostructure arrays
WO2006003620A1 (en) * 2004-06-30 2006-01-12 Koninklijke Philips Electronics N.V. Method for manufacturing an electric device with a layer of conductive material contacted by nanowire

Also Published As

Publication number Publication date
GB0611557D0 (en) 2006-07-19

Similar Documents

Publication Publication Date Title
KR101078125B1 (en) Nonvolatile Nano-channel Memory Device using Mesoporous Material
Younis et al. High-performance nanocomposite based memristor with controlled quantum dots as charge traps
US9181085B2 (en) Method for manufacturing printed product by aligning and printing fine particles
JP5575103B2 (en) Nanowire structure
US20140197369A1 (en) Nanoparticle-based memristor structure
US6790787B2 (en) Structure having narrow pores
US8941908B2 (en) Porous electrode sheet, method for producing the same, and display device
KR101709823B1 (en) Methods for controlling density, porosity, and/or gap size within nanotube fabric layers and films
JP2006510229A (en) Self-organized nanopore arrays with controlled symmetry and order
US20070100086A1 (en) Method of fabricating a three-dimensional nanostructure
JP3854620B2 (en) Method for patterning colloidal self-assembled photonic crystal and method for producing inverted opal structure three-dimensional photonic crystal optical waveguide using the same
KR20140106082A (en) Gas sensor and method for manufacturing gas sensor
CN101467030A (en) Hydrogen sensor
US9956740B2 (en) Bowl-shaped structure, method for manufacturing same, and bowl array
CN107290326B (en) Chip device and manufacturing method thereof
Singh et al. Universal method for the fabrication of detachable ultrathin films of several transition metal oxides
EP2522041B1 (en) Electrically actuated switch
US20180371631A1 (en) Exposed segmented nanostructure arrays
WO2007144590A1 (en) Nanostructured systems and a method of manufacture of the same
US7842938B2 (en) Programmable metallization cells and methods of forming the same
CN107111200A (en) Conductive support for electrochromic device, the electrochromic device and its autofrettage for including the conductive support
KR101444336B1 (en) Gas sensor and method for manufacturing gas sensor
KR101960526B1 (en) Silver nanowire film and method for manufacturing thereof
WO2007144596A1 (en) Improvements relating to plasmonic coupling devices
KR102679933B1 (en) Photosensitive variable electronic device using photoreactive polymer-based nanocomposite

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07733166

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: DZP2008000725

Country of ref document: DZ

122 Ep: pct application non-entry in european phase

Ref document number: 07733166

Country of ref document: EP

Kind code of ref document: A1