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WO2007020939A1 - Pâte de polissage - Google Patents

Pâte de polissage Download PDF

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Publication number
WO2007020939A1
WO2007020939A1 PCT/JP2006/316096 JP2006316096W WO2007020939A1 WO 2007020939 A1 WO2007020939 A1 WO 2007020939A1 JP 2006316096 W JP2006316096 W JP 2006316096W WO 2007020939 A1 WO2007020939 A1 WO 2007020939A1
Authority
WO
WIPO (PCT)
Prior art keywords
fullerene
polishing
polishing slurry
water
fullerene derivative
Prior art date
Application number
PCT/JP2006/316096
Other languages
English (en)
Japanese (ja)
Inventor
Takashi Miyoshi
Yasuhiro Takaya
Ken Kokubo
Kenji Matsubayashi
Takumi Oshima
Original Assignee
Vitamin C60 Bioresearch Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vitamin C60 Bioresearch Corporation filed Critical Vitamin C60 Bioresearch Corporation
Priority to JP2007531007A priority Critical patent/JPWO2007020939A1/ja
Publication of WO2007020939A1 publication Critical patent/WO2007020939A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Definitions

  • the present invention relates to a polishing slurry used for chemical mechanical polishing (CMP).
  • LSI Large Scale Integrated Circuit
  • multilayer wiring technology using copper as a wiring material is known.
  • CMP is applied as a planarization process for each layer.
  • CMP is indispensable in the damascene process in which copper is buried in a groove for wiring formed in advance by sputtering, and then the copper on the surface is removed to form a copper wiring. In this way, CMP is one of the important elemental technologies for further miniaturization and high integration of LSI.
  • Patent Document 1 discloses a slurry for CMP containing a silica abrasive capable of polishing a copper-based metal film.
  • Patent Document 1 JP 2004-071673 A
  • Polishing slurries used in conventional CMP use silica-based particles or alumina-based particles as polishing abrasive grains, so those having a large particle size can reach several hundred nm and have large variations in particle size. there were. Furthermore, since silica-based particles or alumina-based particles are likely to aggregate, it has been difficult to maintain uniform dispersibility of the abrasive cannons in the polishing slurry. Therefore, the flatness when copper wiring is polished using conventional CMP polishing slurry is about 500 nm in 30 mm square, and 7 to 8 layers is the limit when applied to the polishing power of a multilayer wiring structure. Met. In order to achieve higher integration of LSIs, it is necessary to polish the copper wiring more evenly. The conventional polishing slurry for CMP meets this requirement. It is becoming difficult to
  • the present invention has been made in view of these problems, and an object of the present invention is to provide a polishing slurry that can further improve the flatness of the surface when a metal or semiconductor is polished by CMP. Is in the provision of.
  • One embodiment of the present invention is a polishing slurry used for polishing a semiconductor or metal, which contains water and fullerene or a fullerene derivative, and the particle size of the fullerene or the fullerene derivative is less than lOOnm. It is characterized by that.
  • a fullerene single molecule is a very small sphere having a particle size of 0.7 lnm.
  • Fullerene molecules are as hard as diamonds.
  • the particle size of the abrasive particles in the polishing slurry is important.
  • the particle size of the fullerene or fullerene derivative exceeds lOOnm, scratches are generated on the substrate because the particle size of the abrasive grains is too large.
  • the particle size of fullerene or fullerene derivative is greater than or equal to lOOnm, the absolute value of the variation in particle size becomes large, which causes undulation in the substrate and makes flatness difficult.
  • the particle size of fullerene or fullerene derivative is set to less than lOOnm, it is possible to achieve flatness of 2 nm or less in 20 m square. As a result, the flatness of the substrate surface is dramatically improved, and it becomes possible to manufacture LSIs having a wiring structure with ten or more layers.
  • the “particle size of fullerene or fullerene derivative” means the size of the fullerene or fullerene derivative in water, and the fullerene or fullerene derivative in water is a single molecule, cluster or aggregate. Either form may be sufficient.
  • Another aspect of the present invention is a polishing slurry used for polishing a semiconductor or metal, containing water and fullerene or a fullerene derivative, wherein the fullerene or fullerene derivative is dissolved in water.
  • “fullerene or fullerene derivative is dissolved in water” means a state in which water containing fullerene or a fullerene derivative is not suspended and is transparent.
  • fullerene or a fullerene derivative is dissolved in water and is present in water as a single molecule or a cluster of several fullerene molecules associated. For this reason, the polishing slurry of the polishing slurry is extremely fine and the particle size is kept uniform at the molecular level, so that flatness that is difficult to achieve with conventional CMP can be obtained.
  • the fullerene derivative in order to make the particle size of the fullerene derivative in water less than lOOnm or to make the fullerene derivative water-soluble, the fullerene derivative preferably has a hydroxyl group.
  • an oxidizing agent, a preservative, and a chelating agent may be further contained.
  • a polishing slurry further containing an oxidizing agent, a preservative, and a chelating agent is suitable for polishing a metal.
  • the oxidizing agent forms a fragile oxide film on the metal surface.
  • the preservative suppresses the corrosion of the oxidizing agent.
  • the chelating agent serves to dissolve the oxide film formed by the oxidizing agent into the slurry as complex ions. In such an aqueous solution, fullerene nanoparticles that rotate under constant pressure with a polishing pad act as polishing particles and play a role in smoothly removing fragile oxide films without scratching or roughness. .
  • a semiconductor or metal can be polished more flatly.
  • FIG. 1 is a schematic view showing a configuration of a general CMP apparatus used in the present embodiment.
  • FIG. 3 FT-IR ⁇ vector diagram of water-insoluble C ( ⁇ ) ⁇ 5 ⁇ ⁇ of reaction raw material.
  • FIG. 5 is a graph showing the relationship between polishing time and surface roughness.
  • FIG. 6 is an example of an AFM observation image of the substrate surface obtained by a polishing experiment using the polishing slurry of this example.
  • FIG. 7 is an example of an AFM observation image of the substrate surface obtained by a polishing experiment using the polishing slurry of this example.
  • polishing surface plate 10 polishing surface plate, 12 polishing pad, 20 pressure head, 30 substrate, 40 polishing slurry supply means, 50 polishing slurry.
  • FIG. 1 is a schematic diagram showing a configuration of a general CMP apparatus used in the present embodiment.
  • the CMP apparatus 1 includes a polishing surface plate 10, a polishing pad 12, a pressure head 20, and polishing slurry supply means 40.
  • the polishing surface plate 10 has a mechanism that can rotate at a predetermined rotation speed.
  • a polishing pad 12 is affixed to the polishing surface plate 10.
  • the polishing pad 12 is not particularly limited, and for example, non-woven fabric, foamed polyurethane, porous fluorocarbon resin, etc. can be used.
  • the pressure head 20 has a mechanism that can rotate at a predetermined rotation speed and a mechanism that pressurizes the polishing platen 10 with a predetermined pressure.
  • a substrate 30 that also has metal or Z and semiconductor power is attached to the pressure head 20 with the surface to be polished facing the polishing surface plate 10.
  • the polishing slurry supply means 40 includes piping, a pump (not shown), and the like, and can continuously supply the polishing slurry 50 onto the polishing pad 12 during polishing.
  • the polishing slurry according to the embodiment of the present invention is a polishing slurry containing water and fullerene or a fullerene derivative, and has a particle size force of less than SlOOnm.
  • fullerene is not limited as long as it satisfies the purpose, but may be, for example, C60, C70 or higher, and a mixture thereof. Among these fullerenes, C60 is preferable.
  • the fullerene or fullerene derivative may be in the form of a single molecule, a cluster or an aggregate in the aqueous solution of the polishing slurry.
  • the particle size of the fullerene or fullerene derivative By setting the particle size of the fullerene or fullerene derivative to less than lOOnm, flatness of 2 nm or less in a 20 ⁇ m square can be realized. This dramatically improves the flatness of the substrate surface and enables the manufacture of LSIs with a dozen levels of wiring structures.
  • the fullerene or fullerene derivative is dissolved in water.
  • Fullerene or fullerene induction The polishing slurry in which the body is dissolved in water is transparent, and the particle size of fullerene or fullerene derivative is naturally less than lOOnm. Since the fullerene or fullerene derivative is dissolved in water, it becomes difficult for abrasive particles to remain on the surface of the semiconductor or metal, and the polishing slurry can be easily removed after the polishing process.
  • the fullerene derivative preferably has a hydroxyl group. Further, it is expected that the fullerene derivative can further improve water solubility without increasing the number of hydroxyl groups by further having a hydrophilic group such as an amino group. it can.
  • the functional group of the fullerene derivative is not limited to the above-described hydroxyl group and amino group as long as it improves water solubility. For example, a carboxyl group, a sulfo group, a morphono group, and a salt thereof can be used as the functional group of the fullerene derivative.
  • the means for dissolving fullerene in water is not limited to the use of fullerene derivatives in which substituents such as hydroxyl groups are introduced into fullerene, but inclusion bodies of fullerene, cyclodextrin, PVP and the like (hereinafter referred to as fullerene inclusion). Body)).
  • fullerene inclusion it is possible to dissolve fullerene without changing the structure of fullerene itself.
  • the fullerene may be dispersed in water by adding it to a large amount of water and stirring.
  • the metal is polished, it is preferable to further contain an oxidizing agent, a preservative, and a chelating agent.
  • the oxidizing agent oxidizes the surface of the metal to be polished.
  • the oxidizing agent is not particularly limited, and examples thereof include aqueous hydrogen peroxide, sodium hydroxide, and potassium hydroxide.
  • the preservative suppresses the corrosion of the oxidizing agent.
  • Preservatives are not particularly limited, but BTA
  • the chelating agent dissolves the acid film formed by the oxidizing agent into the slurry as complex ions.
  • the chelating agent is not particularly limited, and examples thereof include compounds such as malonic acid, citrate, phosphoric acid, nitric acid, malic acid, and ammonium compounds thereof.
  • the type and amount of the oxidizing agent, preservative, and chelating agent are determined depending on the metal material to be polished. It can be changed as appropriate according to the quality.
  • An example of a polishing slurry that can be applied to copper polishing is shown below.
  • Ammonium phosphate (chelating agent) 0.5-: LOwt%
  • the pH of the polishing slurry may be adjusted with a pH adjusting agent such as hydroxide or ammonia.
  • a polishing slurry was prepared using full water and highly water-soluble polyhydroxylene fullerene, which was estimated to have an average of 36 hydroxyl groups modified on fullerene C60, and the resulting copper film was deposited on a silicon wafer. ! A polishing experiment using CMP was conducted.
  • the resulting precipitate is precipitated using a centrifuge, separated by decantation, further washed twice with 50 mL of ether, and then vacuum-dried for 18 hours to dissolve the water-soluble reaction product.
  • a light ocher powder 0.097 g of fullerene hydroxide was obtained.
  • Fig. 2 shows the FT-IR ⁇ vector of the powder thus obtained.
  • C-C and C-0 stretch in based 1620, 1370 showed a broad absorption around 1080cm- 1.
  • These absorption patterns are very similar to the spectrum of the water-insoluble hydroxide-fullerene (Fig. 3) reported by LY Chiang et al. (J. Am. Chem. Soc, 1992, 114, 10154), and the relative intensity ratio of each absorption is slightly different. It was suggested that there is.
  • fullerene hydroxide prepared as described above 0.02 g was dissolved in 20 ml of ultrapure water, and then stirred by ultrasonic vibration. The obtained fullerene aqueous solution was uniformly dispersed with ultrasonic waves to prepare a 0.1 wt% polyhydroxyl-fullerene aqueous solution. Next, the fullerene aqueous solution was passed through an lOOnm filter. As a result, a light yellow uniform filtrate exactly the same as the aqueous solution before filtration was obtained. From this, it was estimated that the fullerene particles in the fullerene aqueous solution were less than lOOnm.
  • FIG. 5 shows the relationship between the polishing time and the surface roughness.
  • the roughness before polishing in the 5 ⁇ m square is more than lOnm in RMS, and a large swell of about 40 nm is seen from the cross-sectional curve.
  • RMS RMS force
  • the polishing time increases, the roughness improves exponentially, and the surface finish is good with an RMS force of S2 nm or less (RMS is 0.339 nm in the cross-section curve) in about 6 minutes.
  • RMS is 0.339 nm in the cross-section curve
  • FIG. 6 and FIG. 7 are examples of AFM observation images of the substrate surface obtained by a polishing experiment using the polishing slurry of this example.
  • Figure 6 shows an AFM image when the measurement area is 20 m square. The RMS at this time was 1.644 nm.
  • Figure 7 shows an AFM image when the measurement area is 5 m square. The RMS at this time was 0.722 nm, and an ultra-smooth surface with a roughness of 1 nm or less was obtained.
  • the number of force hydroxyl groups in which the average number of hydroxyl groups of the fullerene hydroxide is 36 is not limited thereto.
  • a fullerene hydroxide having an average number of hydroxyl groups of 40 can be prepared by the following procedure, and can be used as polishing particles of polishing slurry.
  • Example 2 Following the same procedure as in Example 1 but stir the water-insoluble solution of water-insoluble hydroxide-fullerene in hydrogen peroxide solution at 60 ° C for 4 days to confirm that the solution became completely uniform yellow and transparent. After further reaction for 10 days, the color of the solution gradually faded and became pale yellow and transparent. Further, by the same operation, 0.13 g of a milky white powder of water-soluble hydroxylated fullerene was obtained. [0044] An FT-IR measurement of the powder thus obtained confirmed that the spectrum was almost the same as that of hydroxy-fullerene having an average number of hydroxyl groups of 36 (Fig. 8).
  • a semiconductor or metal can be polished more flatly. More specifically, the polishing slurry of the present invention is useful as a chemical mechanical polishing polishing particle for flattening the surface of a semiconductor or metal, and has great industrial applicability.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne une pâte de polissage utilisée pour polir un conducteur ou un métal. La pâte de polissage se caractérise en ce qu’elle contient de l’eau, du fullerène ou un dérivé de fullerène, et le diamètre de la particule du fullerène ou du dérivé de fullerène est inférieur ou égal à 100 nm. Une planéité inférieure ou égale à 2 dans 20 µm carré est obtenue en disposant d’un diamètre de particule du fullerène ou du dérivé de fullerène inférieur ou égal à 100 nm.
PCT/JP2006/316096 2005-08-16 2006-08-16 Pâte de polissage WO2007020939A1 (fr)

Priority Applications (1)

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JP2007531007A JPWO2007020939A1 (ja) 2005-08-16 2006-08-16 研磨スラリー

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JP2005-236163 2005-08-16
JP2005236163 2005-08-16

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011000899A1 (fr) * 2009-07-03 2011-01-06 Commissariat à l'énergie atomique et aux énergies alternatives Procédé de modification de la structure cristalline d'un élément en cuivre
JP2012248594A (ja) * 2011-05-26 2012-12-13 Kyushu Institute Of Technology 研磨剤
JP2013526483A (ja) * 2010-04-07 2013-06-24 ガバ・インターナショナル・ホールディング・アクチェンゲゼルシャフト スズおよび硝酸イオンを含む口腔ケア組成物
WO2015001939A1 (fr) * 2013-07-03 2015-01-08 三島光産株式会社 Procédé de polissage de précision et machine à polir
KR20190081989A (ko) * 2017-12-29 2019-07-09 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US20190382618A1 (en) * 2018-06-19 2019-12-19 Samsung Electronics Co., Ltd. Hydroxyl fullerene dispersion, method of preparing the same, polishing slurry including the same, and method of manufacturing a semiconductor device
US20200071613A1 (en) * 2018-08-30 2020-03-05 Samsung Electronics Co., Ltd. Slurry composition for chemical mechanical polishing, method of preparing the same, and method of fabricating semiconductor device by using the same
KR20200058017A (ko) * 2018-11-19 2020-05-27 삼성전자주식회사 연마 슬러리 및 반도체 소자의 제조 방법
US10961414B2 (en) 2018-07-23 2021-03-30 Samsung Electronics Co., Ltd. Polishing slurry, method of manufacturing the same, and method of manufacturing semiconductor device
CN112812691A (zh) * 2019-11-15 2021-05-18 三星电子株式会社 抛光浆料和制造半导体器件的方法
WO2021124597A1 (fr) 2019-12-20 2021-06-24 昭和電工株式会社 Procédé de polissage, procédé de fabrication de dispositif mécanique et dispositif mécanique
US11254840B2 (en) 2019-03-13 2022-02-22 Samsung Electronics Co., Ltd. Polishing slurry and method of manufacturing semiconductor device

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JP2003297779A (ja) * 2002-03-29 2003-10-17 Sumitomo Bakelite Co Ltd 研磨用組成物並びに研磨方法
JP2003347244A (ja) * 2002-05-29 2003-12-05 Mitsubishi Electric Corp 半導体ウエハの研磨方法
JP2005146036A (ja) * 2003-11-12 2005-06-09 Sanwa Kenma Kogyo Kk 精密研磨剤
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Cited By (25)

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US9620412B2 (en) 2009-07-03 2017-04-11 Commissariat à l'énergie atomique et aux énergies alternatives Method for modifying the crystalline structure of a copper element
FR2947571A1 (fr) * 2009-07-03 2011-01-07 Commissariat Energie Atomique Procede de restauration d'un element en cuivre
WO2011000899A1 (fr) * 2009-07-03 2011-01-06 Commissariat à l'énergie atomique et aux énergies alternatives Procédé de modification de la structure cristalline d'un élément en cuivre
US8926950B2 (en) 2010-04-07 2015-01-06 Gaba International Holding Ag Oral care composition comprising stannous and nitrate ions
JP2013526483A (ja) * 2010-04-07 2013-06-24 ガバ・インターナショナル・ホールディング・アクチェンゲゼルシャフト スズおよび硝酸イオンを含む口腔ケア組成物
JP2012248594A (ja) * 2011-05-26 2012-12-13 Kyushu Institute Of Technology 研磨剤
WO2015001939A1 (fr) * 2013-07-03 2015-01-08 三島光産株式会社 Procédé de polissage de précision et machine à polir
KR20190081989A (ko) * 2017-12-29 2019-07-09 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
KR102210254B1 (ko) * 2017-12-29 2021-02-01 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US20190382618A1 (en) * 2018-06-19 2019-12-19 Samsung Electronics Co., Ltd. Hydroxyl fullerene dispersion, method of preparing the same, polishing slurry including the same, and method of manufacturing a semiconductor device
US10961414B2 (en) 2018-07-23 2021-03-30 Samsung Electronics Co., Ltd. Polishing slurry, method of manufacturing the same, and method of manufacturing semiconductor device
KR102653892B1 (ko) * 2018-08-30 2024-04-02 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물, 그의 제조 방법, 및 그를 이용한 반도체 소자의 제조 방법
US20200071613A1 (en) * 2018-08-30 2020-03-05 Samsung Electronics Co., Ltd. Slurry composition for chemical mechanical polishing, method of preparing the same, and method of fabricating semiconductor device by using the same
CN110872472A (zh) * 2018-08-30 2020-03-10 三星电子株式会社 浆料组合物、其制备方法和利用其制造半导体装置的方法
KR20200025541A (ko) * 2018-08-30 2020-03-10 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물, 그의 제조 방법, 및 그를 이용한 반도체 소자의 제조 방법
US10829690B2 (en) 2018-08-30 2020-11-10 Samsung Electronics Co., Ltd. Slurry composition for chemical mechanical polishing, method of preparing the same, and method of fabricating semiconductor device by using the same
KR20200058017A (ko) * 2018-11-19 2020-05-27 삼성전자주식회사 연마 슬러리 및 반도체 소자의 제조 방법
KR102718281B1 (ko) * 2018-11-19 2024-10-15 삼성전자주식회사 연마 슬러리 및 반도체 소자의 제조 방법
US11254840B2 (en) 2019-03-13 2022-02-22 Samsung Electronics Co., Ltd. Polishing slurry and method of manufacturing semiconductor device
US11795347B2 (en) 2019-03-13 2023-10-24 Samsung Electronics Co., Ltd. Polishing slurry and method of manufacturing semiconductor device
EP3822327A1 (fr) * 2019-11-15 2021-05-19 Samsung Electronics Co., Ltd. Suspension de polissage et procédé de fabrication de dispositif semi-conducteur
CN112812691A (zh) * 2019-11-15 2021-05-18 三星电子株式会社 抛光浆料和制造半导体器件的方法
CN112812691B (zh) * 2019-11-15 2024-04-09 三星电子株式会社 抛光浆料和制造半导体器件的方法
WO2021124597A1 (fr) 2019-12-20 2021-06-24 昭和電工株式会社 Procédé de polissage, procédé de fabrication de dispositif mécanique et dispositif mécanique
EP4079450A4 (fr) * 2019-12-20 2023-02-15 Showa Denko K.K. Procédé de polissage, procédé de fabrication de dispositif mécanique et dispositif mécanique

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