WO2007072818A1 - Liquid producing apparatus, liquid immersion exposure apparatus, and method for manufacturing device - Google Patents

Abstract

Disclosed is a liquid producing apparatus (16) which comprises measuring devices (61K and the like) for measuring the state of a liquid (LQ) to be supplied into an exposure apparatus (EX). The liquid producing apparatus (16) outputs the measured results obtained by the measuring devices (61K and the like) to the exposure apparatus (EX).

Description

 Specification

 Liquid manufacturing apparatus, immersion exposure apparatus, and device manufacturing method

 Technical field

 The present invention relates to a liquid manufacturing apparatus used in an immersion exposure apparatus that exposes a substrate through a liquid.

The present invention relates to an immersion exposure apparatus that exposes a substrate through a liquid, and a device manufacturing method.

 This application claims priority based on Japanese Patent Application No. 2005-365626 filed on December 19, 2005, the contents of which are incorporated herein by reference.

 Background art

 [0002] Semiconductor devices, liquid crystal display devices, and the like are manufactured by a so-called photolithography technique in which a photosensitive substrate is exposed to form a pattern on the substrate. As an exposure apparatus used in this photolithography process, for example, an immersion exposure apparatus disclosed in Patent Document 1 below has been proposed. This immersion exposure apparatus forms an immersion area on a substrate with a liquid such as water or an organic solvent, and irradiates the substrate with exposure light through the liquid. Patent Document 1: Pamphlet of International Publication No. 99Z49504

 Disclosure of the invention

 Problems to be solved by the invention

 In an immersion exposure apparatus, it is important to maintain a liquid in a desired state in order to accurately perform exposure processing and measurement processing via the liquid. For this reason, when there is an abnormality in the liquid, it is important to take appropriate measures promptly according to the abnormality.

 The present invention relates to a liquid manufacturing apparatus suitable for an immersion exposure apparatus that exposes a substrate through a liquid, an immersion exposure apparatus that can accurately perform exposure processing and measurement processing using the liquid, and the immersion exposure apparatus. It is an object to provide a device manufacturing method using an exposure apparatus.

 Means for solving the problem

The present invention employs the following configuration.

According to the first aspect of the present invention, there is provided a liquid manufacturing apparatus that manufactures an exposure liquid supplied to an immersion exposure apparatus that exposes a substrate, the measuring apparatus measuring the state of the exposure liquid. And a liquid manufacturing apparatus that outputs a measurement result of the measurement apparatus to the exposure apparatus.

 [0006] According to the first aspect of the present invention, the liquid manufacturing apparatus is provided with the measuring device that measures the state of the liquid, and the measurement result is output to the exposure apparatus. Whether or not the force is in a desired state can be determined by the immersion exposure apparatus. If there is an abnormality in the liquid, it is possible to quickly take appropriate measures according to the abnormality. Therefore, the exposure process and the measurement process in the immersion exposure apparatus using the liquid from the liquid manufacturing apparatus can be performed with high accuracy.

 [0007] According to the second aspect of the present invention, there is provided an immersion exposure apparatus for exposing a substrate, the liquid manufacturing apparatus for manufacturing a liquid, and the state of the liquid manufactured by the liquid manufacturing apparatus. A liquid production system having an apparatus, a flow path through which the liquid fed from the liquid production system flows, and a valve for opening and closing the flow path, and the liquid production system via the flow path An exposure apparatus is provided in which exposure light is irradiated onto the substrate through a liquid supplied onto the substrate.

 [0008] According to the second aspect of the present invention, when there is an abnormality in the liquid supplied from the liquid production apparatus, it is possible to quickly perform an appropriate treatment according to the abnormality. Therefore, exposure processing and measurement processing using a liquid can be performed with high accuracy.

 [0009] According to a third aspect of the present invention, there is provided a device manufacturing method using the exposure apparatus described above. According to the third aspect of the present invention, the device can be manufactured in a state where the exposure accuracy and the measurement accuracy are favorably maintained, and thus a device that exhibits desired performance can be manufactured. The invention's effect

 [0010] According to the present invention, it is possible to perform exposure processing and measurement processing with high precision in an immersion exposure apparatus, and a device having desired performance can be manufactured using the immersion exposure apparatus. . Brief Description of Drawings

 FIG. 1 is a schematic block diagram that shows one embodiment of an exposure apparatus of the present invention.

 FIG. 2 is a schematic configuration diagram showing a pure water production apparatus and a liquid supply unit.

 FIG. 3 is a schematic configuration diagram showing a measurement device.

 FIG. 4 is a flowchart showing an example of a semiconductor device manufacturing process.

Explanation of symbols [0012] 2 ... Optical element, 10 ... Liquid supply mechanism, 11 ... Liquid supply unit, 16 ... Pure water production device, 17- Temperature control device, 20 ... First liquid recovery mechanism, 21 ... · 1st liquid recovery unit, 60 ··· Measurement device, 61 to 6 4 ··· Measurement device, 61K to 64K ··· Branch pipe, 70 ··· First nozzle member, 161 ··· Pure water production device, 173 ··· Deaeration device · “Filter, AR1… Projection area, AR2 Immersion area, EX… Exposure device, INF… Notification device, MRY… Storage device, LQ… Liquid, P… Substrate, PL… Projection optical system, PST… Substrate stage

 BEST MODE FOR CARRYING OUT THE INVENTION

 Hereinafter, the present invention will be described with reference to the drawings. The present invention is not limited to the following embodiment.

 FIG. 1 is a schematic block diagram showing an embodiment of an exposure apparatus according to the present invention.

 [0014] In FIG. 1, the exposure apparatus EX includes a mask stage MST that can move while holding the mask M, a substrate stage PST that can move while holding the substrate P, and a mask stage MST. Illumination optical system IL that illuminates the held mask M with exposure light EL, and projection optical system PL that projects the pattern image of mask M illuminated with exposure light EL onto substrate P held on substrate stage PST And a control device CONT that controls the overall operation of the exposure apparatus EX. The control device CONT is connected to a notification device INF that notifies information related to the exposure process. The notification device INF includes a display device (display device), an alarm device that issues an alarm (warning) using sound or light, and the like. Further, a storage device MRY that stores information relating to the exposure process is connected to the control device CONT.

The exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which an immersion method is applied, and a liquid supply mechanism 10 that supplies the liquid LQ to the image plane side of the projection optical system PL, and collects the liquid LQ. And a first liquid recovery mechanism 20. While at least the pattern image of the mask M is projected onto the substrate P, the exposure apparatus EX uses a liquid LQ supplied from the liquid supply mechanism 10 to a part of the substrate P including the projection area AR1 of the projection optical system PL. An immersion area AR2 that is larger than the projection area AR1 and smaller than the substrate P is locally formed. That is, the exposure apparatus EX uses a local immersion liquid that fills the liquid LQ between the optical element 2 at the image plane side end of the projection optical system PL and the substrate P surface disposed on the image plane side of the projection optical system PL. The method is adopted. The substrate P is irradiated with the exposure light EL via the liquid LQ between the projection optical system PL and the substrate P and the projection optical system PL. As a result, the substrate P is exposed. The control device CONT supplies the liquid LQ onto the substrate P using the liquid supply mechanism 10 and recovers the liquid LQ on the substrate P using the first liquid recovery mechanism 20 so that the liquid is supplied onto the substrate P. LQ immersion area AR2 is locally formed.

 [0016] A first nozzle member 70, which will be described in detail later, is disposed in the vicinity of the image plane of the projection optical system PL. The first nozzle member 70 is an annular member provided so as to surround the optical element 2. During the exposure of the substrate P, the first nozzle member 70 is disposed above the substrate P (substrate stage PST) and faces at least one force of the substrate P and the substrate stage PST to the lower surface of the first nozzle member 70. In the present embodiment, the first nozzle member 70 constitutes a part of each of the liquid supply mechanism 10 and the first liquid recovery mechanism 20.

 In the present embodiment, the exposure apparatus EX is a scanning exposure apparatus that exposes the substrate P with an image of a pattern formed on the mask M while moving the mask M and the substrate P in the respective scanning directions synchronously. (So-called scanning stepper). In the following explanation, the direction parallel to the optical axis AX of the projection optical system PL is the Z-axis direction, the synchronous movement direction (scanning direction) of the mask M and the substrate P in the plane perpendicular to the Z-axis direction is the X-axis direction, The direction perpendicular to the Z-axis direction and X-axis direction (non-scanning direction) is the Y-axis direction. The rotation (inclination) directions around the X, Y, and Z axes are the ΘΘ, 0 Y, and 0 Z directions, respectively.

 The exposure apparatus EX includes a base BP provided on the floor surface, and a main column 1 installed on the base BP. The main column 1 is formed with an upper support portion 7 and a lower support portion 8 that protrude inward. The illumination optical system IL is supported by a support frame 3 fixed to the upper part of the main column 1.

[0019] The illumination optical system IL includes an exposure light source, an optical integrator that equalizes the illuminance of the light beam emitted from the exposure light source, a condenser lens that collects the exposure light EL from the optical integrator, a relay lens system, and an exposure It has a variable field stop that sets the illumination area on the mask M with light EL in a slit shape. The predetermined illumination area on the mask M is illuminated with the exposure light EL having a uniform illuminance distribution by the illumination optical system IL. Illumination optical system IL force As the exposure light EL emitted, far ultraviolet light (DUV light) such as bright lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248nm) are also emitted. , Vacuum ultraviolet light (VUV) such as ArF excimer laser light (wavelength 193nm) and F laser light (wavelength 157nm) Light). In this embodiment, ArF excimer laser light is used.

 In the present embodiment, pure water is used as the liquid LQ. Pure water transmits not only ArF excimer laser light but also far ultraviolet light (DUV light) such as emission lines (g-line, h-line, i-line) emitted from mercury lamp force and KrF excimer laser light (wavelength 248 nm). Is possible.

 Mask stage MST is movable while holding mask M. A plurality of gas bearings (air bearings) 45 are provided on the lower surface of the mask stage MST. Mask stage MST is supported on the upper surface (guide surface) of mask surface plate 4 by air bearing 45. Openings MK1 and MK2 that allow the pattern image of the mask M to pass through are formed at the center of the mask stage MST and the mask surface plate 4, respectively. The mask surface plate 4 is supported on the upper support portion 7 of the main column 1 via a vibration isolator 46. The anti-vibration device 46 separates the mask surface plate 4 and the main column 1 so that the vibration of the main column 1 is not transmitted to the mask surface plate 4 that supports the mask stage MST.

 [0022] The mask stage MST can be moved two-dimensionally in the XY plane on the mask surface plate 4 and slightly rotated in the ΘZ direction by the mask stage drive device MSTD including a linear motor controlled by the control device CONT. Is possible.

 [0023] A reflecting mirror 41 is provided on the mask stage MST. A laser interferometer 42 is provided at a predetermined position. The position of the mask M on the mask stage MST in the two-dimensional direction and the rotation angles in the 0 X, 0 Y, and 0 Z directions are measured in real time by the laser interferometer 42. The measurement result of the laser interferometer 42 is output to the control device CONT. The control device CONT controls the mask stage driving device MSTD based on the measurement result of the laser interferometer 42, and controls the position of the mask M held by the mask stage MST.

 [0024] The reflecting mirror 41 may include not only a plane mirror but also a corner cube (retro reflector). Instead of fixing the reflecting mirror 41 to the mask stage, for example, an end surface (side surface) of the mask stage MST. The reflective surface may be formed by mirror finishing. Further, the mask stage MST may be configured to be capable of coarse and fine movement disclosed in, for example, Japanese Patent Laid-Open No. 8-130179 (corresponding US Pat. No. 6,721,034).

Projection optical system PL projects an image of the pattern of mask M onto substrate で at a predetermined projection magnification β. Projection optical system PL includes a plurality of optical elements including optical element 2 provided at the end thereof. These optical elements are supported by a lens barrel PK. In the present embodiment, the projection optical system PL is a reduction system having a projection magnification j8 of 1Z4, 1/5, or 1Z8, for example, and forms a reduced image of the mask pattern in a projection area conjugate with the illumination area described above. The projection optical system PL may be any of a reduction system, a unity magnification system, and an enlargement system. Further, the projection optical system PL may not be a refraction element, but may be a reflection system, or may be a catadioptric system including a reflection element and a refraction element. In the present embodiment, only the optical element 2 at the end of the projection optical system PL is in contact with the liquid LQ in the liquid immersion area AR2.

 A flange PF is provided on the outer periphery of the lens barrel PK that holds the projection optical system PL. The projection optical system PL is supported by the lens barrel surface plate 5 via the flange PF. The lens barrel surface plate 5 is supported on the lower support portion 8 of the main column 1 via a vibration isolator 47. That is, the lens barrel base plate 5 and the main column 1 are separated by the vibration isolator 47 so that the vibration of the main column 1 is not transmitted to the lens barrel base plate 5 that supports the projection optical system PL. .

 The substrate stage PST is movable while supporting a substrate holder PH that holds the substrate P. A plurality of gas bearings (air bearings) 48 are provided on the lower surface of the substrate stage PST. The substrate stage PST is supported on the upper surface (guide surface) of the substrate surface plate 6 by air bearings 48. The substrate surface plate 6 is supported on the base BP via a vibration isolator 49. In addition, the vibration isolator 49 prevents the vibration force of the base BP (floor) and main column 1 from being transmitted to the substrate surface plate 6 that supports the substrate stage PST. BP (floor surface) is separated.

 [0028] The substrate stage PST is in the XY plane on the substrate surface plate 6 with the substrate P held by the substrate holder PH by the substrate stage driving device PSTD including a linear motor controlled by the control device CONT. It can be moved two-dimensionally and can be rotated slightly in the θZ direction. Furthermore, the substrate stage PST can also move in the Z-axis direction, ΘX direction, and ΘY direction.

[0029] A reflecting mirror 43 is provided on the substrate stage PST. A laser interferometer 44 is provided at a predetermined position. The position and rotation angle of the substrate P on the substrate stage PST in a two-dimensional direction are measured in real time by the laser interferometer 44. In addition, force exposure equipment EX, which is not shown, has positional information on the surface of the substrate P supported by the substrate stage PST. It has a focus / leveling detection system to detect The focus / leveling detection system detects the position information of the substrate P surface in the Z-axis direction and the tilt information of the substrate P in the ΘX and ΘY directions.

 [0030] The focus' leveling detection system detects the tilt information (rotation angle) in the Θ X and Θ Y directions of the substrate by measuring the position information in the Z-axis direction of the substrate at each of the multiple measurement points. To do. Furthermore, for example, if the position information of the substrate in the Z-axis, ΘX, and ΘY directions can be measured using a laser interferometer, the position information in the z-axis direction can be measured during the substrate exposure operation. There is no need to provide a focus and repelling detection system. At least during exposure operations, the position of the substrate in the Z axis, Θ X and Θ Y directions may be controlled using the measurement results of the laser interferometer.

 [0031] The measurement result of the laser interferometer 44 is output to the control device CONT. The detection result of the focus' repelling detection system is also output to the control device CONT. The control device CONT controls the substrate stage drive device PSTD based on the detection result of the focus leveling detection system, controls the focus position and tilt angle of the substrate P, and projects the surface of the substrate P to the projection optical system. The position of the substrate P in the X-axis direction and the Y-axis direction is controlled based on the measurement result of the laser interferometer 44 while matching with the PL image plane.

 A recess 50 is provided on the substrate stage PST, and a substrate holder PH for holding the substrate P is disposed in the recess 50. An upper surface 51 formed around the recess 50 of the substrate stage PST is a flat surface that is substantially the same height (level) as the surface of the substrate P held by the substrate holder PH. There may be a step between the surface of the substrate P held by the substrate holder PH and the upper surface 51 of the substrate stage PST. Note that the upper surface 51 of the substrate stage PST may have a height substantially the same as the surface of the substrate P only in a part thereof, for example, a predetermined region surrounding the substrate P. In this embodiment, the substrate holder PH and the substrate stage PST are configured separately, and the substrate holder PH is fixed to the concave portion of the substrate stage PST by, for example, vacuum suction. It can be integrated with PST.

The liquid supply mechanism 10 includes a liquid supply unit 11 capable of delivering the liquid LQ, and a supply pipe 13 having one end connected to the liquid supply unit 11. The other end of the supply pipe 13 is connected to the first nozzle member 70. In this embodiment, the liquid supply mechanism 10 is a liquid LQ. Pure water is supplied, and a pure water production apparatus 16 is connected to the liquid supply unit 11 via a connection pipe 19.

 FIG. 2 is a schematic diagram showing an example of the configuration of the pure water production apparatus 16 and the liquid supply unit 11.

 The pure water production device 16 is produced by a pure water production device 161 that purifies pure water having a predetermined purity by purifying, for example, tap water or pure water containing suspended solids, impurities, etc., and a pure water production device 161. A measuring device 60 for measuring the state of pure water (liquid LQ) supplied to the supply unit 11 (at least one of the properties and components of the liquid LQ) is provided.

 [0035] The pure water producing device 161 of the pure water producing apparatus 16 is supplied with tap water or pure water via the connecting pipe 18 from the factory. The pure water generator 161 includes a liquid reforming member such as an ion exchange membrane and a particle filter, and a liquid reforming device such as an ultraviolet light irradiation device (UV lamp). Adjust the specific resistance value of the liquid, the number of foreign substances (fine particles, bubbles), total organic carbon (TOC), dissolved gas concentration, and the amount of viable bacteria to the desired values within the allowable range. To do.

 [0036] The measuring device 60 measures the state of the liquid LQ (including at least one of the properties and components of the liquid LQ) delivered from the pure water producer 161. The measurement items of the measuring device 60 are the specific resistance value of the liquid LQ, the total organic carbon in the liquid LQ, the number of particles (including bubbles) in the liquid LQ, the dissolved gas concentration of the liquid LQ (dissolved oxygen concentration (DO: dissolved oxygen), and at least one of Z or dissolved nitrogen concentration (DN: dissolved nitrogen), silica concentration in liquid LQ, metal ion concentration in liquid LQ, etc. The measurement items of the measuring device 60 are selected in consideration of the adverse effects on the substrate P to be exposed and the adverse effects on the components (such as the optical element 2) that make up the exposure device EX, in order to measure the selected measurement items. In addition, the measuring device 60 has at least one measuring instrument. The measuring instrument includes a resistivity meter for measuring the resistivity value, a TOC meter for measuring total organic carbon, a particle counter for measuring the number of foreign particles including fine particles and bubbles in the liquid LQ, and dissolution. A DO meter for measuring oxygen (dissolved oxygen concentration), a DN meter for measuring dissolved nitrogen (dissolved nitrogen concentration), or a silica meter for measuring silica concentration can be used.

[0037] In the present embodiment, the measuring device 60 includes a TOC meter 61 for measuring the total organic carbon in the liquid LQ, and a participant for measuring the number of foreign matters including fine particles and bubbles in the liquid LQ. Counter 62, dissolved gas concentration meter 63 for measuring dissolved gas concentration in liquid LQ (including dissolved oxygen concentration and Z or dissolved nitrogen concentration), and resistivity meter 64.

 FIG. 3 is a schematic configuration diagram of the measuring device 60. As shown in Fig. 3, the TOC meter 61 of the measuring device 60 is connected to a branch pipe (branch flow path) 61K branched from the middle of the pipe forming the flow path of the liquid LQ sent from the pure water generator 161. It is connected. Part of the liquid LQ sent from the pure water generator 161 flows through the branch pipe 61K and flows into the TOC meter 61. The TOC meter 61 measures the total organic carbon (TOC) of the liquid LQ flowing through the branch flow path formed by the branch pipe 61K. Similarly, the particle counter 62, the dissolved gas concentration meter 63, and the specific resistance meter 64 are branched pipes 62K, 63Κ branched from the middle of the pipe forming the flow path of the liquid LQ sent from the pure water generator 161. , 64Κ, and the number of foreign substances (fine particles and bubbles), dissolved gas concentration, and resistivity in the liquid LQ flowing through the branch channel formed by these branch pipes 62Κ, 63Κ, 64Κ, respectively. measure.

 In the present embodiment, the branch pipes 61K to 64K form independent branch flow paths, and the measuring instruments 61 to 64 are connected to the branch flow paths, respectively. In other words, the plurality of measuring instruments 61 to 64 are connected in parallel to the flow path of the liquid LQ sent from the pure water producer 161 via the branch pipes 61 to 64. Note that one branch channel may be formed for the channel of the liquid LQ sent from the pure water production device 161, and a plurality of measuring instruments may be connected in series to some of the branch channels. That is, the state of the liquid LQ flowing into one branch pipe may be measured by the first measuring instrument, and the liquid LQ that has passed through the first measuring instrument may be measured by the second measuring instrument. Further, the liquid LQ used for measurement by each of the measuring instruments 61 to 64 is recovered through a recovery pipe 23 described later.

In the present embodiment, since the liquid LQ is constantly supplied to the measuring device 60 while the liquid LQ is being sent from the pure water producer 161, the measuring device 60 is in a state of liquid LQ (property, and Ζ or component) can be measured at all times, including during and before exposure of the substrate Ρ. That is, the measuring device 60 can measure the state of the liquid LQ in parallel with the operation performed by the exposure device (for example, the immersion exposure operation for the substrate). The measurement result of the measuring device 60 is output to the control device CONT. The control device CONT of the exposure device IV is based on the measurement result of the measurement device 60, and the state of the liquid LQ delivered from the pure water production device 16 The state (property and Z or component) can be monitored at any time.

 The liquid LQ sent from the pure water production device 16 is sent to the liquid supply unit 11 of the liquid supply mechanism 10 via the connection pipe 19 and supplied to the temperature adjustment device 17 of the liquid supply unit 11.

 The temperature control device 17 is manufactured by the pure water manufacturing device 16 and adjusts the temperature of the liquid (pure water) LQ supplied to the supply pipe 13. One end of the temperature control device 17 is connected to the connection pipe 19, and the other end is connected to the supply pipe 13. The temperature controller 17 is provided on the downstream side of the rough temperature controller 171 for roughly adjusting the temperature of the liquid LQ, and controls the amount per unit time of the liquid LQ that flows to the supply pipe 13. A flow controller 172 called a mass flow controller, and a degassing device 173 for reducing the dissolved gas concentration (including dissolved oxygen concentration and Z or dissolved nitrogen concentration) in the liquid LQ that has passed through the flow controller 1 72 The filter 174 removes foreign matter (fine particles, bubbles, etc.) in the liquid LQ deaerated by the degassing device 173, and a fine temperature controller 175 that finely adjusts the temperature of the liquid LQ that has passed through the filter 174. ing.

 [0042] The rough temperature controller 171 adjusts the temperature of the liquid LQ sent from the pure water production device 16 via the connection pipe 19 to, for example, about ± 0.1 ° C with respect to the target temperature (for example, 23 ° C). Coarse! Adjust temperature with accuracy. The flow controller 172 is arranged between the rough temperature controller 171 and the degassing device 173, and the flow rate per unit time of the liquid LQ degassed by the rough temperature controller 171 to the degassing device 173 side. To control.

 [0043] The degassing device 173 is disposed between the rough temperature controller 171 and the fine temperature controller 175, specifically, between the flow controller 172 and the filter 174. The delivered liquid LQ is degassed, and the dissolved gas concentration in the liquid LQ is reduced to the desired value. As the degassing device 173, it is possible to use a device including a degassing filter that separates liquid LQ using a filter such as a hollow fiber membrane filter and removes the separated gas components using a vacuum system. it can.

[0044] The filter 174 is disposed between the rough temperature controller 171 and the fine temperature controller 175, specifically, between the deaerator 173 and the fine temperature controller 175. Removes foreign matter in the delivered liquid LQ. When passing through the flow controller 172 and the deaerator 173, there is a possibility that a slight amount of particles may enter the liquid LQ. Filter downstream of the flow controller 172 and the deaerator 173 174 A foreign object can be removed by the ruta 174. As the filter 174, a known filter such as a hollow fiber membrane filter and Z or particle filter can be used. As the deaeration device 173, for example, a device disclosed in US Patent Publication No. 2005Z0219490 can be used.

[0045] The fine temperature controller 175 is disposed between the rough temperature controller 171 and the supply pipe 13, more specifically between the filter 174 and the supply pipe 13, so that the temperature of the liquid LQ can be accurately determined. Make adjustments. For example, the fine temperature controller 175 sets the temperature (temperature stability, temperature uniformity) of the liquid LQ delivered from the filter 174 with a high accuracy of about ± 0. adjust. The liquid LQ whose temperature has been adjusted by the temperature control device 17 is supplied onto the substrate P via the supply pipe 13 and the first nozzle member 70.

 [0046] The first liquid recovery mechanism 20 is for recovering the liquid LQ on the image plane side of the projection optical system PL, and includes a first liquid recovery unit 21 capable of recovering the liquid LQ, and a first liquid recovery A recovery pipe 23 having one end connected to the part 21 is provided. The other end of the recovery pipe 23 is connected to the first nozzle member 70. The first liquid recovery unit 21 includes, for example, a vacuum system (a suction device) 26 such as a vacuum pump, a gas-liquid separator 27 that separates the recovered liquid LQ and gas, and the like. As a vacuum system, the vacuum system of the factory where the exposure apparatus EX is installed may be used instead of the vacuum pump in the exposure apparatus EX!

 The first nozzle member 70 constituting a part of the liquid supply mechanism 10 and the first liquid recovery mechanism 20 is held by a first nozzle holding member 52, and the first nozzle holding member 52 is the main column 1. Connected to the lower support 8.

[0048] The liquid supply operation of the liquid supply unit 11 is controlled by the control device CONT. In order to form the liquid immersion area A R2, the control device CONT controls the valve 19B arranged in the connection pipe 19 between the pure water production device 16 and the liquid supply unit 11 so that the pure water production device 16 The manufactured liquid LQ is sent to the liquid supply unit 11, and the liquid LQ is sent from the liquid supply unit 11 to the supply pipe 13. The liquid LQ delivered from the liquid supply unit 11 flows through the supply pipe 13, then flows into one end of the supply flow channel formed inside the first nozzle member 70, and is provided in the first nozzle member 70. An optical path space on the image plane side of the projection optical system PL (a space between the optical element 2 and the substrate P in the exposure of the substrate P) is supplied from a supply port (not shown). [0049] The other end of the recovery pipe 23 is connected to one end of a recovery channel formed inside the first nozzle member 70. On the other hand, the other end of the recovery channel formed inside the first nozzle member 70 is connected to a recovery port (not shown) provided in the first nozzle member 70.

 [0050] The liquid recovery operation of the first liquid recovery unit 21 is controlled by the control device CONT. The control device CONT operates the first liquid recovery part 21 of the first liquid recovery mechanism 20 in order to recover the liquid LQ. For example, during the exposure of the substrate P, the operation of the first liquid recovery unit 21 causes the liquid LQ on the substrate P to be recovered from a recovery port (not shown) provided above the substrate P, and the first nozzle member 70. It flows into the recovery pipe 23 through the internal recovery flow path. Thereafter, the liquid LQ is recovered to the first liquid recovery unit 21 via the recovery pipe 23.

 [0051] In the present embodiment, one pure water production apparatus 16 is arranged for one exposure apparatus EX (see FIG. 1), but the present invention is not limited to this. One pure water production apparatus 16 can be shared by multiple exposure units EX.

 [0052] Further, if the pure water production apparatus 16 is arranged on a floor different from the floor on which the exposure apparatus EX is installed (for example, under the floor), the space in the clean room in which the exposure apparatus EX is installed can be used more effectively. That's right.

 Next, a method for exposing the substrate P by projecting the pattern image of the mask M onto the substrate P using the exposure apparatus EX having the above-described configuration will be described with reference to the drawings.

 The control device CONT starts supplying the liquid LQ to the substrate P by the liquid supply mechanism 10 with the optical element 2 of the projection optical system PL facing at least one of the upper surface 51 of the substrate P and the substrate stage PST. To do. Further, the control device CONT starts the liquid recovery by the first liquid recovery mechanism 20 almost simultaneously with the start of the supply of the liquid LQ by the liquid supply mechanism 10. The liquid LQ in the immersion area AR2 formed for immersion exposure of the substrate P is in contact with the lower surface of the optical element 2 and the lower surface of the first nozzle member 70.

[0054] After forming the liquid immersion area AR2, the control device CONT irradiates the substrate P with the exposure light EL in a state where the projection optical system PL and the substrate P face each other, and projects the pattern image of the mask M. The substrate P is exposed by projecting onto the substrate P via the system PL and the liquid LQ. Even when the substrate P is exposed, the control device CONT performs the recovery of the liquid LQ by the first liquid recovery mechanism 20 in parallel with the supply of the liquid LQ by the liquid supply mechanism 10. When exposing substrate P, remove substrate P. While moving the supporting substrate stage PST in the X-axis direction (scanning direction), the pattern image of the mask M is projected onto the substrate P via the projection optical system PL and the liquid LQ.

 The exposure apparatus EX in the present embodiment projects the pattern image of the mask M onto the substrate P while moving the mask M and the substrate P in the X-axis direction (scanning direction). During the scanning exposure of the shutter area, a partial pattern image of the mask M is projected into the projection area AR1 through the liquid LQ in the immersion area AR2 and the projection optical system PL, and the mask M is in the X direction (or Synchronously with the movement in the + X direction) at the velocity V, the substrate P moves in the + X direction (or the X direction) at the velocity β · ν (β is the projection magnification) with respect to the projection area AR1.

 [0056] The state (including properties and soot or components) of the liquid LQ supplied from the pure water production device 16 to the liquid supply unit 11 of the liquid supply mechanism 10 is constantly measured (monitored) by the measurement device 60. . The measurement result of the measurement device 60 is output to the control device CONT, and the control device CONT stores the measurement result (monitor information) of the measurement device 60 in the storage device MRY.

 In the present embodiment, the control device CONT stores the measurement result of the measurement device 60 in the storage device MRY in association with time. In the following description, information in which the measurement result of the measuring device 60 is stored in association with the passage of time is referred to as “log information” as appropriate.

 [0058] The control device CONT determines whether or not the measurement result of the measurement device 60 is abnormal force. Then, the control device CONT controls the exposure operation based on the determination result.

Here, the measurement result of the measuring device 60 is abnormal if at least one measured value of a plurality of items (specific resistance value, TOC, number of particles, dissolved gas concentration) measured by the measuring device 60 is allowed. This refers to the situation where the exposure process and measurement process via the liquid LQ cannot be performed in the desired state because it is out of range. For example, when the specific resistance value of liquid LQ is smaller than the allowable value (for example, 18.2Μ Ω 'cm at 25 ° C) (abnormal), there are many metal ions such as sodium ions in the liquid LQ. May be included. If the immersion area AR2 is formed on the substrate P with the liquid LQ containing a lot of metal ions, the metal ions of the liquid LQ may adhere to the device pattern (wiring pattern) on the substrate P, causing malfunction of the device. There is sex. In addition, if the value of total organic carbon in the liquid LQ is greater than the allowable value (for example, 5. Oppb, more preferably 1. Oppb), the light transmittance of the liquid LQ may be reduced. There is sex. In that case, exposure accuracy via liquid LQ and liquid LQ The measurement accuracy by the optical measuring unit thus deteriorated. Specifically, when the light transmittance of the liquid LQ decreases, the exposure amount on the substrate P varies, and the exposure line width formed on the substrate P varies. In addition, the liquid temperature rises because the liquid LQ absorbs as much light energy as the light transmittance decreases due to the decrease in light transmittance. Due to this temperature rise, the pattern image formed through the projection optical system PL and the liquid LQ may be deteriorated. Also, the amount of foreign matter including fine particles and Z or bubbles in the liquid LQ is more than the allowable value (for example, 0.1 or more in lml, more preferably 0.01). In many cases, there is a high possibility that a pattern transferred onto the substrate P via the liquid LQ will be defective. Also, if the dissolved gas concentration in the liquid LQ is greater than the allowable value (for example, 3ppb for dissolved oxygen, more preferably lppb. For dissolved nitrogen, 3ppm for example) The possibility that bubbles are generated is increased. If bubbles are generated in the liquid LQ, the pattern transferred onto the substrate P is likely to be defective as described above.

 [0059] When it is determined that the measurement result of the measurement device 60 is not abnormal, the control device CONT continues the operation being performed, for example, the immersion exposure operation. On the other hand, when determining that the measurement result of the measurement device 60 is abnormal, the control device CONT stops the operation being performed, for example, the exposure operation. When the measurement result of the measuring device 60 is abnormal, the control device CONT controls the valve 19B provided in the connection pipe 19 between the pure water manufacturing device 16 and the liquid supply unit 11 to control the pure water manufacturing device 16 The liquid supply to the liquid supply unit 11 is stopped. As a result, the temperature regulators 171, 175, degassing device 173, filter 174, etc. that are arranged in the liquid supply unit 11 may be damaged by abnormal liquid LQ, and the life of various replacement parts may be shortened. Can reduce adverse effects.

 [0060] When the measurement result of the measurement device 60 is determined to be abnormal, the control device CONT issues an alarm (warning) by the notification device INF, and the liquid LQ supplied from the pure water production device 16 is abnormal. This can be notified by the notification device INF.

[0061] Further, based on the measurement result of the measuring device 60, the control device CONT can identify a plurality of abnormalities of the liquid LQ, and can notify the countermeasure by the notifying device INF. For example, when it is determined that the specific resistance value of the liquid LQ is abnormal based on the measurement result of the specific resistance meter 64 of the measurement device 60, the control device CONT performs maintenance of the ion exchange membrane of the pure water production apparatus 161. (point Display of the content prompting the “replacement” is displayed (notified) by the notification device INF. If it is determined that the total organic carbon in the liquid LQ is abnormal based on the measurement result of the TOC meter 61 of the measuring device 60, the control device CONT performs maintenance on the UV lamp of the pure water producer 161 ( The display of the content prompting the inspection (replacement) is displayed (notified) by the notification device INF. If it is determined that the number (amount) of foreign matter (fine particles, bubbles) in the liquid LQ is abnormal based on the measurement result of the particle counter 62 of the measuring device 60, the control device CONT Display (notify) the information that prompts maintenance (inspection / replacement) of the particle filter in the notification device INF. In addition, when it is determined that the dissolved gas concentration in the liquid LQ is abnormal based on the measurement result of the dissolved gas concentration meter 63 of the measuring device 60, the control device CONT removes the degassing device 173 of the temperature adjustment device 17 from the degassing device 173. Increase your ability.

 Note that the control device CONT can always notify the measurement result (monitor information) of the measurement device 60 by the notification device IN F, or can notify the measurement result of the measurement device 60 at a predetermined interval by the notification device IN F. It is also possible to notify, and the time change (log information) of the measurement result of the measuring device 60 can be notified by the notifying device INF.

 [0063] In addition, when the measurement result of the measurement device 60 is abnormal, the control device CONT performs adjustments to continue various operations without stopping the various operations performed by the exposure apparatus EX. You can also. For example, during the exposure of the substrate P, the light transmittance of the liquid LQ may fluctuate due to the fluctuation of the TOC in the liquid LQ. If the light transmittance of the liquid LQ fluctuates, the exposure amount (integrated exposure amount) on the substrate P will fluctuate, and as a result, the exposure line width of the device pattern formed in the shot area may become abnormal. There is sex. Therefore, the relationship between the TOC in the liquid Q and the light transmittance of the liquid LQ at that time is obtained in advance and stored in the storage device MRY, and the control device CONT stores the stored information and the measurement device 60 (TOC meter). By controlling the exposure amount based on the measurement result of 61), a pattern with a desired line width can be obtained.

[0064] As described above, the measurement device 60 for measuring the state of the liquid LQ (including at least one of the properties and components) is provided in the pure water production device 16, and based on the measurement result. V, whether or not the liquid LQ for forming the immersion area AR2 is in a desired state (it can be determined whether or not it is abnormal. And if the measurement result of the measuring device 60 is abnormal) Preventing deterioration in accuracy of measurement and exposure performed by the exposure system EX by promptly taking appropriate measures to bring the liquid LQ into the desired state and controlling the operation of the exposure system EX It is out.

 [0065] In the above-described embodiment, the measuring device 60 always measures the state of the liquid LQ delivered from the pure water production device 16, but at predetermined time intervals or at predetermined times (for example, Let's measure the state of liquid LQ at the top of the lot).

 In the above-described embodiment, the exposure apparatus EX (for example, between the liquid supply unit 11 and the first nozzle member 70 and between the Z or the first nozzle member 70 and the first liquid recovery unit 21). In the meantime, a measuring device similar to the measuring device provided in the pure water producing device 16 may be provided. In this case, the deterioration of the liquid LQ in the exposure apparatus EX can be detected by comparing the measurement result of the measurement apparatus 60 in the pure water production apparatus 16 with the measurement result of the measurement apparatus in the exposure apparatus EX. it can.

 [0067] In the above-described embodiment, the control device CONT controls the operation of the exposure apparatus EX based on the measurement result of the measurement apparatus 60 of the pure water production apparatus 16, but the state of the exposure apparatus EX (During exposure, measurement, error occurrence, etc.) is output to the pure water production device 16, and the pure water production device 16 controls the operation of the pure water production device 16 itself based on the information from the exposure device EX. (For example, optimize the pure water production operation).

 [0068] In the above-described embodiment, the temperature adjustment device 17 of the liquid supply unit 11 includes the filter 174, the deaeration device 173, and the flow rate controller 172. At least one of these may be omitted. Good.

 [0069] In the above-described embodiment, the pure water (liquid LQ) produced by the pure water production apparatus 16 is supplied to the first nozzle member via the liquid supply unit 11 including the temperature control apparatus 17. Force supplied to 70 The liquid supply unit 11 may be omitted, and pure water (liquid LQ) produced by the pure water production apparatus 16 may be directly sent to the supply pipe 13.

[0070] The liquid LQ in the above-described embodiment is pure water. Pure water has the advantage that it can be easily obtained in large quantities at semiconductor manufacturing factories and the like, and has no adverse effect on the photoresist, optical elements (lenses), etc. on the substrate P. In addition, pure water has no negative impact on the environment and the content of impurities is extremely low, so that the surface of the substrate P and the front end surface of the projection optical system PL The effect | action which wash | cleans the surface of the provided optical element is also expectable.

In each of the above embodiments, the exposure apparatus EX exposes the substrate P by filling the optical path space on the exit side of the optical element 2 of the projection optical system PL with the liquid LQ. As disclosed in Publication No. 2004 Z019128, the light path space on the incident side of the optical element 2 of the projection optical system PL may be filled with the liquid LQ. In this case, the liquid manufacturing apparatus (pure water manufacturing apparatus) for manufacturing the liquid LQ (pure water) supplied to the optical path space on the incident side of the optical element 2 is also provided with a measuring device for measuring the state of the liquid LQ. Is desired.

[0072] It should be noted that the liquid LQ of this embodiment may be a liquid other than pure water that is pure water! /. For example, if the light source of the exposure light EL is F laser, the liquid LQ transmits F laser light.

 twenty two

 Possible perfluorinated polyether (PFPE), fluorinated oil, etc. can be used.

[0073] The liquid LQ may have a refractive index of about 1.6 to 1.8. Examples of liquid Q include, for example, isopropanol having a refractive index of about 1.50, daricerol (glycerin) t having a refractive index of about 1.61, a C—H bond, and a predetermined liquid having an O—H bond, Specific liquids (organic solvents) such as hexane, heptane, decane, etc., and predetermined liquids such as decalin, bicyclohexyl, etc. Alternatively, any two or more of these predetermined liquids may be mixed, or pure water may be added (mixed) with the predetermined liquid. Alternatively, as the liquid LQ, in pure water, H +, Cs +, K +, Cl_, SO 2_,

 Four

A base or acid such as PO ^2_ may be added (mixed). Furthermore, A1 acid in pure water

Four

 It may be one obtained by adding (mixing) fine particles such as chemical compounds. These liquid LQs can transmit ArF excimer laser light. In addition, as the liquid LQ, a photosensitive material (or a protective film (topcoat film) or a coating film) coated on the surface of the projection optical systems PL and Z or the substrate P having a small light absorption coefficient and a small temperature dependency. It is preferably stable with respect to an antireflection film or the like.

 The optical element 2 can be made of, for example, quartz (silica). Alternatively, it may be formed of a single crystal material of a fluoride compound such as calcium fluoride (fluorite), barium fluoride, strontium fluoride, lithium fluoride, sodium fluoride, and BaLiF. In addition, the final optics

 Three

The element may be formed of lutetium aluminum garnet (LuAG). And a single crystal material of a fluoride compound such as sodium fluoride. [0075] At least one optical element of the projection optical system may be formed of a material having a refractive index higher than that of quartz and Z or fluorite (for example, 1.6 or more). For example, as disclosed in WO 2005Z059617 pamphlet, sapphire, diacid germanium, etc., or as disclosed in WO 2005Z059618 pamphlet, salt potassium (with a refractive index of about 1 75) etc. can be used.

 In each of the above embodiments, the exposure apparatus provided with the projection optical system having a plurality of optical elements has been described as an example. However, a projection optical system constituted by one optical element may be used. Alternatively, the present invention can be applied to an exposure apparatus and an exposure method that do not use a projection optical system. Even when the projection optical system is not used, the exposure light is irradiated onto the substrate through an optical member such as a mask or a lens, and an immersion region is formed in a predetermined space between the optical member and the substrate. The

 In each of the above embodiments, the position information of the mask stage and the substrate stage is measured using the interferometer system. However, the present invention is not limited to this, and for example, a scale (diffraction grating) provided on the upper surface of the substrate stage is detected. You can use an encoder system! In this case, it is preferable that the hybrid system includes both the interferometer system and the encoder system, and the measurement result of the encoder system is calibrated (calibrated) using the measurement result of the interferometer system. Further, the position of the substrate stage may be controlled by switching between the interferometer system and the encoder system or using both.

 [0078] Further, the present invention relates to JP-A-10-163099, JP-A-10-214783, JP 2000-505958, US Pat. No. 6,341,007, US Pat. No. 6,400,441. , U.S. Patent 6,549,269, U.S. Patent 6,590,634, U.S. Patent 6,208,407, U.S. Patent 6,262,796, etc. It can also be applied to a multi-stage type exposure apparatus.

Note that the substrate P in each of the above embodiments is not limited to a semiconductor wafer for manufacturing semiconductor devices, but also a glass substrate for display devices, a ceramic wafer for thin film magnetic heads, a mask used in an exposure apparatus, or Reticle masters (synthetic quartz, silicon wafers) are applied. The substrate is not limited to a circular shape, but a rectangle, etc. Other shapes may be used.

 [0080] As the exposure apparatus EX, in addition to a step-and-scan type scanning exposure apparatus (scanning stepper) that exposes the substrate P while synchronously moving the mask M and the substrate P, mask M and The present invention can also be applied to a static exposure type projection exposure apparatus (stepper) that exposes the pattern of the mask M while the substrate P is stationary.

 [0081] Further, as the exposure apparatus EX, a reduced image of the first pattern is projected with the first pattern and the substrate P substantially stationary, for example, a refractive optical system (for example, including a reflective element at a 1Z8 reduction magnification). It can also be applied to an exposure apparatus that uses a projection optical system) to perform batch exposure on the substrate P. In this case, after that, with the second pattern and the substrate P almost stationary, a reduced image of the second pattern is collectively exposed on the substrate P by partially overlapping the first pattern using the projection optical system. It can also be applied to a stitch type batch exposure apparatus. In addition, the stitch type exposure apparatus can also be applied to a step 'and' stitch type exposure apparatus in which at least two patterns are partially overlapped and transferred on the substrate P, and the substrate P is sequentially moved.

 [0082] Further, the present invention relates to JP-A-10-163099, JP-A-10-214783, JP 2000-505958, US Pat. No. 6,341,007, US Pat. No. 6,400,441. , U.S. Patent 6,549,269, U.S. Patent 6,590,634, U.S. Patent 6,208,407, U.S. Patent 6,262,796, etc. Applicable.

 [0083] Further, as disclosed in JP-A-11 135400, JP-A-2000-164504, US Pat. No. 6,897,963, and the like, a substrate stage for holding the substrate P and various measurements are performed. The present invention can also be applied to an exposure apparatus that includes a measurement stage equipped with a sensor or the like.

 Further, in the above-described embodiment, a force that employs an immersion exposure apparatus in which the surface of the substrate is locally covered with a liquid. The present invention provides an exposure as disclosed in JP-A-6-124873. The present invention is also applicable to an immersion exposure apparatus in which the entire target substrate surface is covered with a liquid.

[0084] The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the substrate P, but for manufacturing a liquid crystal display element or a display. It can be widely applied to an exposure apparatus, an exposure apparatus for manufacturing a thin film magnetic head, an imaging device (CCD), a micromachine, a MEMS, a DNA chip, a reticle or a mask, and the like.

 [0085] It should be noted that as long as it is permitted by the laws and regulations of the country designated or selected in this international application, the disclosures of all published publications and US patents related to the exposure apparatus and the like cited in the above embodiments and modifications are incorporated. As a part of the description of the text.

 The exposure apparatus EX is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Thus, adjustments are made to achieve electrical accuracy.

 The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection, and the like between the various subsystems. It is a matter of course that there is an assembly process for each subsystem before the assembly process for the exposure system. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. It is desirable to manufacture the exposure apparatus in a clean room where the temperature and cleanliness are controlled.

 [0088] As shown in FIG. 4, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, Substrate processing processes such as step 203 for manufacturing a substrate as a base material, a step of exposing the substrate by the exposure apparatus EX of the above-described embodiment, a step of developing the exposed substrate, heating (curing) of the developed substrate, and an etching step Including step 204, device assembly step (including dicing process, bonding process, and packaging process) 205, inspection step 206, and the like.

Claims

 The scope of the claims

 [I] A liquid production apparatus for producing an exposure liquid supplied to an immersion exposure apparatus for exposing a substrate,

 A liquid manufacturing apparatus comprising a measuring device for measuring the state of the exposure liquid, and outputting a measurement result of the measuring device to the exposure device.

 2. The liquid manufacturing apparatus according to claim 1, wherein the liquid is pure water.

 [3] The measurement device measures at least one of a property and a component of the liquid.

The liquid production apparatus according to 1 or 2.

[4] The measuring device includes at least one of the number of particles in the liquid, the dissolved gas concentration in the liquid, the specific resistance value of the liquid, the total organic carbon in the liquid, and the silica concentration in the liquid. The liquid manufacturing apparatus according to any one of claims 1 to 3, wherein one of them is measured.

[5] An immersion exposure apparatus for exposing a substrate,

 A liquid production system comprising: a liquid production apparatus for producing a liquid; and a measurement device for measuring a state of the liquid produced by the liquid production apparatus;

 A flow path through which the liquid delivered from the liquid production system flows;

 A valve for opening and closing the flow path,

 An exposure apparatus that irradiates the substrate with exposure light through the liquid supplied from the liquid manufacturing system to the substrate through the flow path.

6. The exposure apparatus according to claim 5, further comprising a storage device that stores a measurement result of the measurement apparatus.

7. The exposure apparatus according to claim 6, wherein the storage device stores the measurement result in association with time.

 8. The exposure apparatus according to any one of claims 5 to 7, further comprising a control device that controls an exposure operation based on a measurement result of the measurement apparatus.

[9] The liquid according to claims 5 to 8, wherein the liquid is pure water! The exposure apparatus according to claim 1,

[10] The measurement device measures at least one of a property and a component of the liquid.

The exposure apparatus according to any one of 5-9.

[II] The measurement device is a device that measures at least one of the number of particles in a liquid, the concentration of dissolved gas in the liquid, the specific resistance value of the liquid, the total organic carbon in the liquid, and the concentration of silica in the liquid. Claim 5 ~: The exposure apparatus according to any one of LO.

12. The exposure apparatus according to claim 5, wherein opening and closing of the flow path is controlled using the valve based on a measurement result of the measurement apparatus.

[13] The apparatus further includes a liquid adjusting device that adjusts the temperature of the liquid supplied from the liquid manufacturing device,

 13. The exposure apparatus according to claim 12, wherein the valve is disposed between the liquid manufacturing apparatus and the liquid adjustment apparatus.

14. The exposure apparatus according to claim 13, wherein the liquid adjusting device has a deaeration device.

[15] Exposing the substrate using the exposure apparatus according to any one of claims 5 to 14, and developing the exposed substrate;

 A device manufacturing method including: