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WO2006092397A1 - Transistor a effet de champ sensible aux gaz, procede d'utilisation et applications - Google Patents

Transistor a effet de champ sensible aux gaz, procede d'utilisation et applications Download PDF

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Publication number
WO2006092397A1
WO2006092397A1 PCT/EP2006/060331 EP2006060331W WO2006092397A1 WO 2006092397 A1 WO2006092397 A1 WO 2006092397A1 EP 2006060331 W EP2006060331 W EP 2006060331W WO 2006092397 A1 WO2006092397 A1 WO 2006092397A1
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WO
WIPO (PCT)
Prior art keywords
gas
effect transistor
field effect
sensitive
sensitive layer
Prior art date
Application number
PCT/EP2006/060331
Other languages
German (de)
English (en)
Inventor
Ignaz Eisele
Gunter Freitag
Thorsten Knittel
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2006092397A1 publication Critical patent/WO2006092397A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs

Definitions

  • the invention relates to a gas-sensitive field-effect transistor, the gas-sensitive layer of which has work function changes present at the target gas, which are read out with a FET. Furthermore, an operating method and a use are given.
  • Such a limited operating temperature range directly limits the number of sensitive materials available that can be used for a gas-sensitive layer. Since the overlying operating temperature ranges can not be used, above all, chemically active layers with a high potential for selectivity and high signal levels can not be used, since many work reversibly only at a higher temperature range above 180 ° C. Furthermore, conventional gas-sensitive field-effect transistors are very sensitive to temperature fluctuations. In order to keep a signal constant for a small temperature range of only a few 0 C, an extensive adjustment effort is regularly required.
  • the invention has for its object to provide a gas-sensitive field effect transistor, which works stably even at higher temperatures than 18O 0 C.
  • the invention is based on the finding that an expansion of the operating range in the case of gas-sensitive field-effect transistors is achieved by the use of the so-called "silicon-on-chip" field effect transistors.
  • Silicon applied In this layer, the usual features of a field effect transistor, namely drain, channel, channel insulation, source on or applied.
  • the invention provides for the use of a readout transistor in a gas sensitive field effect transistor constructed in SOI (Silicon on Isolator) technology.
  • the maximum of the operating temperature can be increased by about 200 0 C for such a FET.
  • the number of sensitive materials that can be used alone can be substantially increased thereby.
  • FIG. 1 shows a field effect transistor in a lateral embodiment represented by the so-called SOI
  • FIG. 2 shows the part of a gas-sensitive field effect transistor with a vertical transistor and a floating gate electrode, which supplies a potential from a gas-sensitive layer (not shown),
  • FIG. 3 shows the entire view of a gas-sensitive field-effect transistor in which both the SOI technology and the use of a vertical transistor are realized.
  • FIG. 4 shows an exemplary diagram of a hydrogen measurement with an SOI-FET.
  • FIG. 5 shows an input characteristic family of the gas-sensitive transistor
  • FIG. 6 shows input characteristics for different temperatures
  • FIG. 7 shows a section through a field effect transistor of conventional design.
  • the invention achieves, in a first step, substantial increases in operating temperature and stabilization with corresponding advantages, such as increasing the number of sensitive layers that can be used.
  • This first step consists of replacing a conventional lateral-type readout transistor having a conductive substrate with a laterally constructed field-effect transistor for reading out a signal which is, however, constructed on an insulating substrate such as, for example, silicon dioxide. On this insulator, the lateral field effect transistor is applied in SOI technology, which allows much higher operating temperatures than 180 0 C.
  • FIG. 7 shows a laterally constructed field effect transistor according to the prior art for reading a signal at a gas-sensitive layer.
  • the transistor consists of a conductive substrate 10, a bulk silicon 12 placed in a well in the substrate, and the one for a
  • the existing over the channel 11 insulation 54 is the channel insulation.
  • a non-illustrated gas-sensitive layer is applied to the gate 8 and is either in direct contact with the channel insulation 54 or is separated therefrom by a very narrow air gap to be precisely adjusted.
  • a field effect transistor according to this prior art has an upper operating temperature limit of about 180 0 C.
  • FIG. 1 shows a section through an SOI-FET according to the invention for reading out a signal of a gas-sensitive one Layer.
  • bulk silicon 12 is deposited on a bottom substrate, which is represented by an insulation 51.
  • the elements such as drain 2, channel 11, gate 8, source 3 are present in the usual lateral transistor design.
  • a gas-sensitive layer is attached to the gate 8 and is either directly on the insulation 54 or is fixed relative to the insulation 54 over a small air gap.
  • FIG. 3 shows a schematic structure of a SOI-FET with floating gate, in which a vertical transistor is installed as a read-out transistor.
  • a vertical transistor is installed as a read-out transistor.
  • On the insulation 51 is shown in Figure 3, left, in the region of the capacitive voltage divider 6, a conductive layer of silicon / bulk silicon 12 is applied. This is followed by an insulation 52.
  • Gate 9 is covered at the bottom with the gas-sensitive layer 7.
  • the floating gate 4 extends to the channel region of the vertical transistor 1 in Figure 3, to the right.
  • the vertical transistor 1 has layers lying on top of each other with corresponding functions, wherein source 3 is applied to the insulator 51, thereon the layer for the channel 11 and then the layer for the representation of drain 2. At the front side of this layer sequence an insulation 53 is present.
  • the insulation 55 covers the floating gate 4 at the top in total.
  • FIG. 2 shows an enlarged view of the right-hand part from FIG. 3.
  • the insulation 53 on the front side of the vertical transistor 1 can be seen clearly.
  • the floating gate is extended into this frontal area and corresponds to the capacitive voltage divider. 6 according to FIG. 3.
  • an intrinsic layer enclosing the channel region 11 on three sides is indicated.
  • the stage of the vertical transistor 1 in Figure 2 leakage current is the current I ß ⁇ j ⁇ between the source 3 and
  • Drain 2 occurs despite all countermeasures.
  • Figure 5 shows an input characteristic family of the transistor, in which case the gas sensitive FET comprises a vertical transistor.
  • the current I ⁇ s in ⁇ A is plotted against the voltage U Q S measured in volts.
  • the input characteristic curve differs in each case in the voltage Uj3s, the curve at 100 mV being the lowest curve in FIG.
  • the voltage and current indices mean G-gate, S-source and D-drain.
  • FIG. 6 shows input characteristics for various temperatures, with the voltage U Q S being plotted against the current Ij3s as in FIG. If the family of curves is considered above the point of inflection, then the uppermost curve corresponds to the lowest temperature, namely 22 ° C.
  • FIG. 6 to the right, a detail enlargement in the voltage range from -4.4 to -3.3 V is shown. The so-called isothermal point is kept to 300 0 C.
  • the advantages resulting from the invention are in particular the following:
  • the number of sensitive materials can be used to represent the gas sensitive

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention concerne un transistor à effet de champ sensible aux gaz comportant une couche sensible aux gaz (7) dont la sortie varie en présence de gaz cible, et au moins un transistor à effet de champ (FET) de lecture de signal, adjacent à la couche sensible aux gaz (7), recevant directement un potentiel présent, ou espacé par rapport à la couche sensible aux gaz (7) et recevant le potentiel par l'intermédiaire d'une électrode à grille flottante (4). Ledit transistor à effet de champ est de type silicium sur isolateur (SOI), le substrat étant constitué par un isolateur (51) présentant une couche de silicium en vrac (12). Ledit transistor comporte un drain (2), une source (3), un canal (11) et une isolation de canal (54) et une grille (8) présentant une couche sensible aux gaz (7) est fixée directement par l'intermédiaire d'une isolation de canal (54) ou par création d'un entrefer. Le transistor selon l'invention peut être employé dans des capteurs de gaz, de capteurs de pression et des capteurs de gaz d'échappement sur des systèmes de moteur.
PCT/EP2006/060331 2005-03-04 2006-02-28 Transistor a effet de champ sensible aux gaz, procede d'utilisation et applications WO2006092397A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005010032.5 2005-03-04
DE200510010032 DE102005010032A1 (de) 2005-03-04 2005-03-04 Gassensitiver Feldeffekttransistor, Betriebsverfahren und Verwendung

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Publication Number Publication Date
WO2006092397A1 true WO2006092397A1 (fr) 2006-09-08

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DE (1) DE102005010032A1 (fr)
WO (1) WO2006092397A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112666229A (zh) * 2020-12-14 2021-04-16 深圳华中科技大学研究院 一种场效应管氢气传感器及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008006326A1 (de) * 2008-01-28 2009-07-30 Robert Bosch Gmbh Sensorelement eines Gassensors
DE102009000820A1 (de) * 2009-02-12 2010-08-19 Robert Bosch Gmbh Sensorelement eines Gassensors und Verfahren zum Betrieb desselben
DE102011075396A1 (de) 2011-05-06 2012-11-08 Siemens Ag Gassensor

Citations (2)

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Publication number Priority date Publication date Assignee Title
US6111280A (en) * 1997-01-15 2000-08-29 University Of Warwick Gas-sensing semiconductor devices
DE10219726A1 (de) * 2002-05-02 2003-11-27 Eads Deutschland Gmbh Verfahren zur Herstellung eines brückenartigen Halbleiter-Gassensors, sowie Halbleiter-Gassensor mit Brückenstruktur

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Publication number Priority date Publication date Assignee Title
DE10254158A1 (de) * 2002-11-20 2004-06-09 Infineon Technologies Ag Sensorvorrichtung zur Detektion elektrischer Signale einer biologischen Zelle und Detektionsverfahren

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111280A (en) * 1997-01-15 2000-08-29 University Of Warwick Gas-sensing semiconductor devices
DE10219726A1 (de) * 2002-05-02 2003-11-27 Eads Deutschland Gmbh Verfahren zur Herstellung eines brückenartigen Halbleiter-Gassensors, sowie Halbleiter-Gassensor mit Brückenstruktur

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BURGMAIR M ET AL: "Field effect transducers for work function gas measurements: device improvements and comparison of performance", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 95, no. 1-3, 15 October 2003 (2003-10-15), pages 183 - 188, XP004454668, ISSN: 0925-4005 *
EISELE I ET AL: "Low power gas detection with FET sensors", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 78, no. 1-3, 30 August 2001 (2001-08-30), pages 19 - 25, XP004297630, ISSN: 0925-4005 *
KNITTEL TH ET AL: "Combined ammonia and hydrogen gas sensor", PROCEEDINGS OF IEEE SENSORS 2003. 2ND. IEEE INTERNATIONAL CONFERENCE ON SENSORS. TORONTO, CANADA, OCT. 22 - 24, 2003, IEEE INTERNATIONAL CONFERENCE ON SENSORS, NEW YORK, NY : IEEE, US, vol. VOL. 2 OF 2. CONF. 2, 22 October 2003 (2003-10-22), pages 191 - 194, XP010692251, ISBN: 0-7803-8133-5 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112666229A (zh) * 2020-12-14 2021-04-16 深圳华中科技大学研究院 一种场效应管氢气传感器及其制备方法

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