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WO2005123317A1 - Elimination de bourrelet sur bordure par electropolissage - Google Patents

Elimination de bourrelet sur bordure par electropolissage Download PDF

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Publication number
WO2005123317A1
WO2005123317A1 PCT/US2005/020537 US2005020537W WO2005123317A1 WO 2005123317 A1 WO2005123317 A1 WO 2005123317A1 US 2005020537 W US2005020537 W US 2005020537W WO 2005123317 A1 WO2005123317 A1 WO 2005123317A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
edge
voltage
electrode
ecmp
Prior art date
Application number
PCT/US2005/020537
Other languages
English (en)
Inventor
Alain Duboust
Antoine P. Manens
Liang-Yuh Chen
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/087,878 external-priority patent/US7303462B2/en
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2005123317A1 publication Critical patent/WO2005123317A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Definitions

  • Embodiments of the invention generally relate to removal of a deposited conductive layer along an edge of -a substrate. More particularly, embodiments of the invention relate to an electrode configured to polish a substrate edge during electrochemical mechanical processing of a substrate face.
  • a conductive layer on a substrate such as a copper layer used to fill features formed within a dielectric material
  • a substrate such as a copper layer used to fill features formed within a dielectric material
  • the excess copper on the face can cause problems such as shorts in the circuit.
  • the excess copper extending onto the edge of the substrate can lead to delamination of the copper layer and other problems even if the edge portion is part of an unusable section of the substrate. Therefore, the excess copper must be removed from both the edge and the face of the substrate prior to subsequent processing of the substrate, which may include the addition and removal of additional layers of conducting, semiconducting, and dielectric materials in order to form multilevel interconnects of the integrated circuit.
  • Electrochemical Mechanical Processing provides one technique used to remove the excess copper from the face of the substrate surface by electrochemical dissolution while concurrently polishing the substrate with reduced mechanical abrasion as compared to conventional Chemical Mechanical Polishing (CMP) processes.
  • Electrochemical dissolution is performed by applying a bias between a cathode and the substrate surface to remove the copper from the substrate surface into a surrounding electrolyte.
  • the bias may be applied to the substrate surface by a conductive contact disposed on or through a polishing material upon which the substrate is processed.
  • the mechanical component of the Ecmp polishing process is provided by a relative motion between the substrate and the polishing material that enhances the removal of the copper from the substrate. Direct contact between the substrate and the polishing material removes a passivation layer protecting the copper, thereby enabling the polishing and planarization via Ecmp.
  • EBR edge bead removal
  • the invention generally relates to methods and apparatus for removal of a deposited conductive layer along an edge of a substrate using an electrode configured to electro polish a substrate edge.
  • the electro polishing of the substrate edge may occur simultaneously during electrochemical mechanical processing (Ecmp) of a substrate face.
  • a power source applies a bias between the substrate and at least two electrodes.
  • the electrodes form a first electrode zone proximate the substrate edge at a sufficient potential to electro polish the substrate edge, thereby removing the conductive layer from the substrate edge.
  • a second electrode zone with a lower potential than the first electrode zone is aligned proximate the substrate face during processing to enable Ecmp of the substrate face.
  • Figure 1 is a side view, partially in cross-section, of a processing station of an electrochemical mechanical processing (Ecmp) system.
  • Ecmp electrochemical mechanical processing
  • Figure 2 is a partial sectional view of one embodiment of a polishing pad assembly illustrating a two zone counter electrode configuration capable of removing copper from an edge of a substrate.
  • Figure 3 is a bottom view of a five zone counter electrode used in an Ecmp system that can simultaneously polish a face of the substrate as well as the edge of the substrate thus eliminating the need for a conventional edge bead removal step.
  • Figure 4 is a graph illustrating the contribution of each zone of the counter electrode (as described in Figure 3) on the polishing profile and the edge of the substrate.
  • Figure 5 is a graph illustrating copper thickness on a substrate before and after Ecmp using an electrode to provide edge bead removal via electro polishing.
  • the invention generally relates to the edge bead removal (EBR) from a substrate by an electro polishing process.
  • the electro polishing process may occur simultaneously during electrochemical mechanical processing (Ecmp) of the substrate using one or more electrodes positioned proximate to the edge of the substrate and having a sufficient potential to selectively electro polish the edge. While an exemplary Ecmp station will be described herein for utilizing the electrode to electro polish the edge, it is contemplated that that the electrode may be utilized without a polishing pad in stations other than an Ecmp platen in order to electro polish the edge of the substrate. Further, any Ecmp platen and polishing pad may be utilized for polishing the substrate when the electrode is part of an Ecmp station. For example, other Ecmp stations may use different carrier heads and/or different platen assemblies than those described herein without departing from the scope of the invention.
  • FIG. 1 depicts a partial sectional view of an exemplary processing station 100 employing one embodiment of a polishing pad assembly 106 capable of removing an edge bead from a substrate 120.
  • the processing station 100 includes a carrier head assembly 118 adapted to hold the substrate 120 against a platen assembly 142 disposed in an Ecmp platen 132. Relative motion provided between the substrate 120 and the platen assembly 142 polishes the substrate 120. The relative motion may be rotational, lateral, or some combination thereof and may be provided by either or both of the carrier head assembly 118 and the platen assembly 142.
  • An arm 164 coupled to a base 130 supports the carrier head assembly 118 over the Ecmp platen 132.
  • the carrier head assembly 118 generally includes a drive system 102 coupled to a carrier head 122 for providing at least rotational motion to the carrier head 122.
  • the carrier head 122 additionally may actuate toward the Ecmp platen 132 such that the substrate 120 retained in the carrier head 122 disposes against a processing surface 104 of the Ecmp platen 132 during processing.
  • the carrier head 122 includes a housing 124 and a retaining ring 126 that define a center recess, which retains the substrate 120.
  • the carrier head 122 may be a TITAN HEADTM or TITAN PROFILERTM wafer carrier manufactured by Applied Materials, Inc., of Santa Clara, California.
  • the Ecmp platen 132 generally includes the platen assembly 142 having an upper platen 114 and a lower platen 148 rotationally disposed on a base 158.
  • a bearing 154 between the platen assembly 142 and the base 158 facilitates rotation of the platen assembly 142 relative to the base 158.
  • a motor 160 provides the rotational motion to the platen assembly 142.
  • a top surface 116 of the upper platen 114 supports the polishing pad assembly 106 thereon.
  • the lower platen 148 couples to the upper platen 114 by any conventional coupling, such as a plurality of fasteners (not shown).
  • a plurality of locating pins 146 (one is shown in Figure 1 ) disposed between the upper and lower platens 114, 148 ensure alignment therebetween.
  • the upper platen 114 and the lower platen 148 may optionally be fabricated from a single, unitary member.
  • a plenum 138 defined in the platen assembly 142 may be partially formed in at least one of the upper or lower platens 114, 148.
  • a recess 144 partially formed in the lower, surface of the upper platen 114 defines the plenum 138.
  • At least one hole 108 formed in the upper platen 114 allows electrolyte provided to the plenum 138 from an electrolyte source 170 to flow through the platen assembly 142 and into contact with the substrate 120 during processing.
  • a cover 150 coupled to the upper platen 114 encloses the recess 144 and partially bounds the plenum 138.
  • a pipe (not shown) may dispense the electrolyte onto the top surface of the polishing pad assembly 106.
  • At least one contact assembly 134 is disposed on the platen assembly 142 along with the polishing pad assembly 106.
  • the at least one contact assembly 134 extends at least to or beyond the upper surface of the polishing pad assembly 106 and is adapted to electrically couple the substrate 120 to a power source 166.
  • Counter electrodes (described below) of the polishing pad assembly 106 couple to different terminals of the power source 166 so that an electrical potential may be established between the substrate 120 and the counter electrodes.
  • the contact assembly 134 biases the substrate 120 by electrically coupling the substrate 120 to one terminal of the power source 166 during processing while the substrate 120 is held against the polishing pad assembly 106.
  • the polishing pad assembly 106 couples to another terminal of the power source 166.
  • the electrolyte which is introduced from the electrolyte source 170 and is disposed into the Ecmp platen, completes an electrical circuit between the substrate 120 and the counter electrodes.
  • the electrically conductive electrolyte assists in the removal of material from the surface and edge of the substrate 120.
  • Figure 2 depicts a partial sectional view of the polishing pad assembly 106 and the platen assembly 142 of Figure 1.
  • the polishing pad assembly 106 includes at least a conductive layer 210 and an upper layer 212 having a processing surface 214.
  • at least one permeable passage 218 disposed at least through the upper layer 212 extends at least to the conductive layer 210 in order to allow the electrolyte to establish a conductive path between the substrate 120 and the conductive layer 210.
  • Figure 2 schematically depicts only a few of the passages 218, which are preferably more numerous than shown.
  • the use of adhesives, bonding, compression molding, or the like may combine the conductive layer 210 and upper layer 212 of the polishing pad assembly 106 into a unitary assembly.
  • Examples of polishing pad assemblies that may be adapted to benefit from the invention are described in United States Patent Application Serial No. 10/455,941 , filed June 6, 2003 by Y. Hu et al. (entitled “CONDUCTIVE POLISHING ARTICLE FOR ELECTROCHEMICAL MECHANICAL POLISHING", attorney docket number 4100P4) and United States Patent Application Serial No. 10/455,895, filed June 6, 2003 by Y. Hu et al.
  • the conductive layer 210 typically includes a corrosion resistant conductive material, such as metals, conductive alloys, metal coated fabrics, conductive polymers, conductive pads, and the like. Conductive metals include Sn, Ni, Cu, Au, and the like. Conductive metals also include a corrosion resistant metal such as Sn, Ni, or Au coated over an active metal such as Cu, Zn, Al, and the like.
  • Conductive alloys include inorganic alloys and metal alloys such as bronze, brass, stainless steel, or palladium-tin alloys, among others. Magnetic attraction, static attraction, vacuum, adhesives, or the like holds the conductive layer 210 on the top surface 116 of the upper platen 114 of the platen assembly 142. Other layers, such as release films, liners, and other adhesive layers, may be disposed between the conductive layer 210 and the upper platen 114 to facilitate ease of handling, insertion, and removal of the polishing pad assembly 106 in the processing station 100.
  • the conductive layer 210 includes at least an inner counter electrode 209 and an outer counter electrode 211 that are separated from one another by a gap 213 or other dielectric spacer.
  • a first terminal 202 facilitates coupling of the inner electrode 209 to the power source 166
  • a second terminal 203 facilitates coupling of the outer electrode 211 to the power source 166.
  • stainless steel screws respectively secure leads 204, 205 of the power source 166 with the terminals 202, 203.
  • the power source 166 supplies a first voltage to the outer electrode 211 that is higher than a second voltage supplied to the inner electrode 209.
  • the conductive layer 210 comprises at least two independent electrode zones defined by the electrodes 209, 211 and isolated from each other.
  • the conductive layer 210 should also be fabricated of a material compatible with electrolyte chemistries to minimize cross-talk between zones of the electrodes 209, 211.
  • metals stable in the electrolyte chemistries are able to minimize zone cross-talk.
  • the outer electrode 211 substantially circumscribes an outer perimeter of the polishing pad assembly 106 such that the zone of the outer electrode 211 extends at least to an edge 220 of the substrate 120 as the substrate 120 and the platen assembly 142 move relative to each other.
  • the zone of the inner electrode 209 extends across an area corresponding to a face 221 of the substrate 120 as the substrate 120 and the platen assembly 142 move relative to each other. Proximity of the outer electrode 211 with respect to the edge 220 and the inner electrode 209 with respect to the face 221 ensures that the zones of the electrodes 209, 211 extend to the appropriate portions of the substrate 120.
  • the zones of each of the electrodes 209, 211 substantially remain proximate the edge 220 and the face 221 of the substrate 120, respectively.
  • the head may sweep such that sometimes the edge 220 is in proximity of the inner counter electrode 209.
  • the first voltage applied to the inner electrode results in the typical Ecmp process of the face 221 of the substrate 120 due to a combination of electrochemical dissolution and abrasion from direct contact of a copper layer 222 with the processing surface 214.
  • the contact between the copper layer 222 and the processing surface 214 removes a passivation layer from the copper layer 222 and enables polishing and planarization of the face 221.
  • the copper layer 222 extends onto the edge 220 of the substrate 120 and has not been removed in a separate edge bead removal (EBR) step prior to the Ecmp polishing of the substrate 120.
  • EBR edge bead removal
  • Ecmp may not remove the copper layer 222 around the edge 220 since the copper layer 222 around the edge 220 lacks contact with the processing surface 214.
  • the high voltage difference between the outer electrode 211 and the substrate 120 removes the copper layer 222 along the edge 220 of the substrate 120 during Ecmp without requiring the separate EBR step.
  • the power source 166 supplies the second voltage to the outer electrode 211 such that the voltage difference between the outer electrode 211 and the substrate 120 is sufficient to remove the copper layer 222 under the action of the bias without requiring any abrasion from the processing surface 214. While the passivation layer protects the copper layer 222 from the voltage difference between the substrate 120 and the inner electrode 209 at the first voltage, the passivation layer does not protect the copper layer 222 from the high voltage difference between the substrate 120 and the outer electrode 211 at the second voltage.
  • the second voltage supplied to the outer electrode 211 enables removal or polishing of the copper layer 222 around the edge 220 of the substrate 120 via an electro polishing process. Control of the copper layer 222 removal from the edge 220 of the substrate 120 simply requires adjusting the voltage supplied to the outer electrode 211.
  • the outer electrode 211 selectively removes the copper layer 222 from the edge 220 of the substrate 120 and possibly a small perimeter of the face 221 adjacent the edge 220 since the outer electrode 211 only faces or is proximate the edge 220. Therefore, the outer electrode 211 only electro polishes the edge 220 while the remainder of the substrate 120 facing or proximate the inner electrode 209 is polished via the Ecmp technique.
  • the amount of the copper layer 222 removed around the perimeter of the face 221 depends on the level of the second voltage of the outer electrode 211 and the proximity of the outer electrode 211 to the perimeter of the face 221.
  • the electro polishing of the edge 220 may occur simultaneously with Ecmp of the face 221 such that removal of the copper layer 222 from the edge 220 does not affect throughput during processing of the substrate 120.
  • the voltage supplied to the inner electrode 209 depends on the working range of the Ecmp system and chemistry used therewith in order to obtain the required Ecmp performance such as rate, polishing profile, planarization, defects and surface roughness.
  • the power source 166 preferably supplies a positive bias of approximately zero volts (V) (usually grounded) to the substrate 120 and supplies the first voltage to the inner electrode 209 at preferably from zero V to approximately -5 V, most preferably approximately -2 V or -3 V.
  • the power source 166 supplies the second voltage to the outer electrode 211 at a sufficient voltage to electro polish the copper layer 222.
  • the power source 166 preferably supplies the second voltage to the outer electrode 211 at preferably -4 V to -20 V, most preferably approximately -10 V.
  • additional electrodes providing additional zones may be utilized to tailor Ecmp performance to obtain good uniformity across the face 221 of the substrate 120.
  • the number of zones varies from 3 to 5 with the outermost zone dedicated to electro polishing the copper layer 222 from the edge 220 such as provided by the outer electrode 211.
  • Figure 3 shows a bottom view of a five zone conductive layer 310 for use in an Ecmp platen that provides simultaneous polishing of the substrate and the edge bead removal.
  • the conductive layer 310 includes five electrodes 306, 307, 308, 309, 311 that provide the five zones.
  • a gap 313 separates the electrodes 306, 307, 308, 309, 311 , which each include respective terminals 316, 317, 318, 319, 321 for coupling to a power source.
  • Figure 4 shows a graph illustrating an affect that each zone from the electrodes 306, 307, 308, 309, 311 has in contributing to a profile of a substrate at locations along its radius.
  • Curves 406, 407, 408, 409, 411 respectively represent the percentage that the electrodes 306, 307, 308, 309, 311 affect the profile.
  • the zone formed by an outer one of the electrodes only removes copper from the edge of the substrate. Due to the relative movement between the substrate and the conductive layer 310 during processing, the zone formed by the electrode adjacent the outer electrode may also remove copper from the edge of the substrate. Therefore, the bias of the outer electrode and optionally the electrode adjacent the outer electrode provide a sufficiently high voltage difference with respect to the substrate to remove copper via electro polishing while the bias of the remaining electrodes enable Ecmp.
  • Figure 5 shows a graph illustrating copper thickness on a substrate directly before Ecmp as indicated by curve 501 and after Ecmp as indicated by curve 502 using at least two electrode zones to provide edge bead removal via electro polishing while enabling Ecmp of the face of the substrate.
  • the thickness at the edge of the wafer e.g., corresponding to a radius of 146- 150 mm
  • the curve 502 shows the face (e.g., corresponding to a radius between zero and 146 mm) having been polished via Ecmp.
  • the curve 502 further illustrates at point 503 the affect of electro polishing the conductive layer from the edge since the thickness at this point goes to zero.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un procédé et un dispositif permettant d'éliminer une couche conductrice déposée le long d'une bordure de substrat au moyen d'une électrode qui assure l'électropolissage de bordure de substrat, l'opération pouvant se dérouler simultanément avec le traitement électrochimique et mécanique d'une face de substrat. Selon une variante, une source d'alimentation applique une polarisation entre le substrat et au moins deux électrodes. Les électrodes forment une première zone d'électrode près de la bordure du substrat à un potentiel suffisant pour l'électropolissage de ladite bordure, ce qui permet d'éliminer la couche conductrice de la bordure du substrat. Une seconde zone d'électrode ayant un potentiel inférieur à celui de la première zone est alignée près de la face du substrat durant le traitement, pour l'électropolissage de la face du substrat.
PCT/US2005/020537 2004-06-11 2005-06-09 Elimination de bourrelet sur bordure par electropolissage WO2005123317A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US57909804P 2004-06-11 2004-06-11
US60/579,098 2004-06-11
US11/087,878 US7303462B2 (en) 2000-02-17 2005-03-22 Edge bead removal by an electro polishing process
US11/087,878 2005-03-22

Publications (1)

Publication Number Publication Date
WO2005123317A1 true WO2005123317A1 (fr) 2005-12-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/020537 WO2005123317A1 (fr) 2004-06-11 2005-06-09 Elimination de bourrelet sur bordure par electropolissage

Country Status (2)

Country Link
TW (1) TWI333235B (fr)
WO (1) WO2005123317A1 (fr)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020153097A1 (en) * 2001-04-23 2002-10-24 Nutool, Inc. Electroetching process and system
US20030116444A1 (en) * 2001-12-21 2003-06-26 Basol Bulent M Electrochemical edge and bevel cleaning process and system
US20040007478A1 (en) * 1998-12-01 2004-01-15 Basol Bulent M. Electroetching system and process
US20040023610A1 (en) * 2000-02-17 2004-02-05 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US20040053512A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Process control in electrochemically assisted planarization
US20040082289A1 (en) * 2000-02-17 2004-04-29 Butterfield Paul D. Conductive polishing article for electrochemical mechanical polishing
US20040173461A1 (en) * 2003-03-04 2004-09-09 Applied Materials, Inc. Method and apparatus for local polishing control
US20050016960A1 (en) * 1999-09-07 2005-01-27 Takeshi Nogami Method for producing semiconductor device, polishing apparatus, and polishing method
US20050173260A1 (en) * 2003-03-18 2005-08-11 Basol Bulent M. System for electrochemical mechanical polishing

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040007478A1 (en) * 1998-12-01 2004-01-15 Basol Bulent M. Electroetching system and process
US20050016960A1 (en) * 1999-09-07 2005-01-27 Takeshi Nogami Method for producing semiconductor device, polishing apparatus, and polishing method
US20040023610A1 (en) * 2000-02-17 2004-02-05 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US20040082289A1 (en) * 2000-02-17 2004-04-29 Butterfield Paul D. Conductive polishing article for electrochemical mechanical polishing
US20020153097A1 (en) * 2001-04-23 2002-10-24 Nutool, Inc. Electroetching process and system
US20030116444A1 (en) * 2001-12-21 2003-06-26 Basol Bulent M Electrochemical edge and bevel cleaning process and system
US20040053512A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Process control in electrochemically assisted planarization
US20040173461A1 (en) * 2003-03-04 2004-09-09 Applied Materials, Inc. Method and apparatus for local polishing control
US20050173260A1 (en) * 2003-03-18 2005-08-11 Basol Bulent M. System for electrochemical mechanical polishing

Also Published As

Publication number Publication date
TW200540983A (en) 2005-12-16
TWI333235B (en) 2010-11-11

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