WO2005115637A1

WO2005115637A1 - Forming method, unit and material for pattern films, and product gained by said method

Info

Publication number: WO2005115637A1
Application number: PCT/JP2005/010003
Authority: WO
Inventors: Masahiro Yoshimura; Tomoaki Watanabe; Polwatta Gallage Chammika Ruwan Gallage; Takeshi Fujiwara; Don Guo; Mitsuo Takeda; Motohiro Arakawa; Yumiko Mori
Original assignee: Japan Science And Technology Agency; Tokyo Institute Of Technology; Nippon Shokubai Co., Ltd.
Priority date: 2004-05-28
Filing date: 2005-05-25
Publication date: 2005-12-08
Also published as: JP2008500151A; TW200606021A; KR20070033990A

Abstract

An object of the present invention relates to formation of pattern films and is to provide such a method, a unit, a material, and a product, wherein the method is a wet process and enables the film formation at a low temperature applicable also to a film base material, such as a resin film, and further enables, for example, direct patterning and the formation of a film having a uniform thickness, at low cost and with ease. As a means of achieving this object, a forming method for pattern films according to the present invention is a forming method for a film having a desired pattern on a surface of a base material, characterized in that a desired pattern 8 is formed on the surface of the base material 7 by supplying an ink 2 that includes a film forming material to the surface of the aforementioned base material 7 from a nozzle 1a in a state where heat has been applied to the aforementioned base material 7. And a forming unit for pattern films according to the present invention is characterized by comprising a means for supplying an ink that includes a film forming material to a surface of a base material from a nozzle and a means for heating the base material.

Description

DESCRIPTION

Forming Method, Unit and Material for Pattern Films, and Product Gained by Said Method

TECHNICAL FIELD The present invention relates to a forming method for pattern films, such as a metal oxide film having a desired pattern, a unit and a material that are used for this method, and a product that is gained by this method. BACKGROUND ART Metal oxides, such as ITO and Sn0₂ are utilized for conductive thin films that form electrodes (including transparent electrodes) which are utilized in display devices, such as LCD's, PDP's and touch panels. Such conductive thin films have conventionally been formed by first generating a metal oxide on a substrate, such as a glass plate, as a continuous film by a vapor phase process, such as sputtering or vapor deposition in a vacuum, and after that, forming a desired pattern by a post process, such as an etching process with photo-resist masks. The above described vapor phase process, however, has a problem where its productivity is poor due to a large amount of loss of the metal material caused by volatilization, and moreover its cost becomes extremely high, which becomes a big obstacle to reduce the price of products for display devices. In addition, requirements for the post processes further bring about a still more increase in cost and result in necessity of time, and are therefore great factors of this obstacle. In view of the above described facts, development of film formation technology by a wet process where metal oxide films (ceramic films) which can be used as such as transparent conductive films, high dielectric element films or resistor element films can be efficiently and easily formed on a substrate by heating a film forming material in liquid form that has been applied to a base material without wasting the metal material has been urgently required in recent years, leading to proposals for a variety of technologies, such as: (1) Application liquids which include a metal complex, a metal alkoxide and the like, and which can generate metal oxides as a result of application of heat (see, for example, patent documents 1 to 5 below); (2) Film formation methods for the crystallization of metal oxides at a low temperature, which are achieved by modifying excitation methods after application (see, for example, patent documents 6 and 7 below); and (3) Film formation methods for the crystallization of metal oxides by modifying an application method (a thermal plasma spray method or a spray thermal decomposition method) (see, for example, patent documents 8 to 11 below). [Patent Document 1] JP-A-279437/1999 (Kokai) [Patent Document 2] JP-A-207059/2000 (Kokai) [Patent Document 3] Japanese Patent No. 2136606 [Patent Document 4] Japanese Patent No. 3161471 [Patent Document 5] JP-A-169800/1996 (Kokai) [Patent Document 6] JP-A-157855/1997 (Kokai) [Patent Document 7] JP-A-256862/2000 (Kokai) [Patent Document 8] JP-A-009003/1993 (Kokai) [Patent Document 9] Japanese Patent No. 3271906 [Patent Document 10] Japanese Patent No. 3286954 [Patent Document 11] JP-A-078779/2002 (Kokai) There are the following problems, however, with the above described proposals, concerning the film formation technology by means of a wet process, and a solution for these problems have been required. Namely, in recent years, the miniaturization, an increase in the density, the energy conservation and reduction in the price of respective electronic apparatuses have been required, and the demand has been particularly high in the field of semiconductor mounting on printed wire boards or the like, which is regarded as the core part of the electronics technology, and thus, the technological development for forming electronic circuits with ease and high density has been sought. In order to increase the density of electronic circuits, it is important to reduce the thickness of respective passive elements which form electronic circuits, and in addition, it has become increasingly important to change substrates on which these elements are formed from substrates such as ceramics to film (particularly resin film) substrates which can be reduced in size (thickness) and weight. As can be expected, metal oxides have been used as the material that forms the above described passive elements. For example, barium titanate and the like are utilized for high dielectric elements, and ruthenium oxide, tin oxide and the like are utilized for resistor elements where a predetermined surface resistance value in a range from approximately 10° Ω/D to 10⁸ Ω/α is gained. Any of the above described methods (1) to (3), however, has a problem where it is difficult to provide a base material in film form, and other problems, as described below. According to the above described technology (1) for generating a metal oxide film using an application liquid, a conventional application method is used without modification, in a manner where an application layer having a desired pattern is gained at one time in a dipping manner (by an immersing method) and by an etching process with photo-resist masks, and therefore, it is necessary for all the material compounds within the entirety of this application layer to be thermally decomposed at the same time, and therefore, it is necessary to heat the base material after application has been completed to a considerably high temperature for a long period of time in order to form a metal oxide film that has suitable properties for practical use (applicable to a desired use), and therefore, this technology is of little practical use, taking into consideration the potential of film formation on a film base material such as resin film. According to the above described film formation method (2), the application layer on a base material is irradiated with UV having a short wavelength or with an excimer laser. However, also in this method, similarly to the case of the above described (1), the conventional application method is used without modification, in a manner where an application layer having a desired pattern is gained at one time in a dipping manner (by an immersing method) and by an etching process with photo-resist masks, and all the material compounds within the entirety of this application layer are converted to metal oxides at the same time, and therefore, it is necessary to enhance the energy density of irradiation rays or lengthen the time of irradiation, in order to form a metal oxide film that has suitable properties for practical use. Thus, application of heat at a low temperature has not yet actually been achieved, and therefore, it is considered to be of little practical use, similarly to the above described case (1), taking into consideration the potential of film formation on a film base material. As for the above described film formation method (3), there is a problem with a technology that uses a thermal plasma spray method, where the cost of a unit is high and continuous production is difficult, and there is a problem with a technology that uses a spray thermal decomposition method, where it is necessary to keep the temperature of a substrate at a considerably high temperature (for example, approximately 400°C) for a long period of time in order to form a metal oxide film that has properties for practical use since, also in this method, an application layer having a desired pattern is gained at the same time in a spray manner and by an etching process with photo-resist masks and all the material compounds within the entirety of this application layer are converted to metal oxides at the same time. And it is difficult to convert the base material to film form, and in addition, as to both a thermal plasma spray method and a spray thermal decomposition method, the amount of attachment to a base material is small, relative to the amount of used raw material liquid, leading to a large amount of waste (low yield) and making the cost high. In addition, there is also a problem with a technology that uses a thermal plasma spray method or a spray thermal decomposition method, where it is difficult to control the film thickness so as to make it uniform, from a microscopic point of view (concerning, for example, a surface resistance value). Furthermore, similarly to the above described vapor process, all of the above described technologies (1) to (3) are methods for forming a continuous film on a base material and require a post process, such as an etching process with photo-resist masks, after the formation of a film, as can be expected, in order to form a desired film pattern, and therefore, cannot be said to be methods for high productivity, from the point of view of cost and required time. The above described problems with a wet process are not limited to a case where the film comprises a metal oxide, but rather, occur similarly also in a case where the film comprises a material such as a metal or a resin other than a metal oxide. DISCLOSURE OF THE INVENTION OBJECT OF THE INVENTION Thus, an object to be achieved by the present invention is to provide a forming method for pattern films, a unit and a material that are used in this method, and a product gained by this method, wherein the method is a wet process and is applicable also to a film base material, such as a resin film, and further enables, for example, direct patterning and the formation of a film having a uniform thickness, at low cost and with ease. SUMMARY OF THE INVENTION The present inventors have carried out diligent research in order to solve the above described problems. In its process, they decided to focus on a method for supplying an application liquid to a base material and an excitation method for gaining a desired film from the application layer on a base material, in order to carry out the formation of a pattern film by a wet process. Thus, as to the above described supplying method, an application liquid supplying method which can supply an application liquid in the state of micro liquid droplets (microscopic liquid droplets) to a base material by means of a microscopic nozzle where the distance between the end of the nozzle and the surface of the base material is extremely short, that is to say, in such as a so-called inkjet manner, is adopted, and thereby, it has been respectively found that the amount of waste of the application liquid that is used may be nullified, and the amount of supply of the application liquid per one time may be reduced so as to avoid heating at a high temperature for a long period of time by adopting an application liquid supplying manner for gaining a desired pattern through repeated supply of the application liquid to the same place, that is to say, a repeated supply manner. It has been found that pattern formation (direct patterning) which can not be implemented by an application layer formation method using a conventional dipping (immersing) manner can be quite easily carried out at the same time as the application layer formation in an application liquid supplying manner for ejecting an application liquid in microscopic liquid droplet form from a nozzle, such as an inkjet manner, wherein the relative positional relationship between the above described nozzle and the base material is controlled at the time of supply of an application liquid, in a manner where the point of supply of the application liquid can be arbitrarily and strictly gained, and thereby, a desired pattern formation can be arbitrarily and surely performed, as in an inkjet manner printer. It has also been found that an application layer having a desired thickness can be uniformly formed with extremely high precision in an application liquid supplying manner for ejecting an application liquid in microscopic liquid droplet form from a nozzle, such as an inkjet manner, wherein an application liquid can be supplied to a base material with little waste, as described above, and thereby, the speed of supply of an application liquid from a nozzle and the control speed of the above described positional relationship (speed of movement and the number of applications to the same place) can be strictly controlled. On the other hand, as for the above described excitation method, a base material is attached to an apparatus that can heat a base material, which is in the state in which heat has been applied in advance before application, and then, a metal oxide is immediately crystallized when an application liquid has reached the surface of the base material. In this manner, it has been found that a desired pattern film can be easily formed at a temperature that is significantly lower (for example, a temperature lower by 150°C to 300°C) than the conventional art and in a short period of time, because the entirety of the application layer is not heated at the same time as in the prior art. The present invention has been completed on the basis of this knowledge. Accordingly, a forming method for pattern films according to the present invention is a forming method for a film having a desired pattern on a surface of a base material, characterized in that a desired pattern is formed on the surface of the base material by supplying an ink that includes a film forming material to the surface of the aforementioned base material from a nozzle in a state where heat has been applied to the aforementioned base material. A forming unit for pattern films according to the present invention is a unit that is used to implement the above forming method for pattern films according to the present invention, characterized by comprising a means for supplying an ink that includes a film forming material to a surface of a base material from a nozzle and a means for heating the base material. An ink according to the present invention is a material that is used to implement the above forming method for pattern films according to the present invention, characterized by comprising a film forming material. In addition, a thin film element and an electronic circuit according to the present invention are products that are gained by the above forming method for pattern films according to the present invention. EFFECTS OF THE INVENTION By the forming method for pattern films according to the present invention, even in the case where a resin film (polymer film) comprising polyimide, polyester or the like, to say nothing of a glass substrate or a ceramic substrate such as alumina, is used as a base material, formation of a pattern film can be easily carried out by a wet process at a film formation temperature that can be withstood by the base material, and in addition, direct patterning and formation of a film having a uniform thickness can be carried out with a high yield in a short period of time and at low cost. Accordingly, this is very useful in the field where products such as thin film elements and electronic circuits are manufactured as a technology for forming a pattern film which has the properties required for transparent electrodes, element films for electronic circuits and the like at low cost. In addition, a conventionally utilized ink is also applicable to the formation of an application layer, and therefore, it is possible to say that the industrial demand for such a technology is very high, and that the industrial ripple effect is extremely large. The above described working effects of the forming method for pattern films according to the present invention are not limited to the mounting of electronic circuits, but rather, can be gained also in the formation of a film other than one for the mounting of electronic circuits. The above described forming method for pattern films according to the present invention can be easily carried out if the forming unit for pattern films and the ink according to the present invention are used. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing a mam er of supplying an ink from a nozzle, where: (a) is a manner in which the ink is brought into contact with the base material directly from the nozzle; and (b) is a manner which involves causing the ink to fly in the microscopic liquid droplet form from the nozzle and then attain the surface of the base material. Fig. 2 is a diagram showing an example of the unit according to the present invention that is used to implement the method according to the present invention. Fig. 3 is a diagram showing the main portion of another example of the unit according to the present invention that is used to implement the method according to the present invention. Fig. 4 shows SEM images of a surface (a) and a cross section (b) of a glass substrate with a pattern film gained in Example 1. Fig. 5 is a diagram showing an example of a pattern film gained in Example 18, where (b) is an enlargement of (a). (Explanation of the Symbols in the Drawing Figures) 1 : Inkj et head having a j et nozzle 1 a 2: Ink 3: Ink bottle 5: XY stage

6: Base material holder with a heater 7: Base material 8: Pattern 9: C0₂ laser irradiation means DETAILED DESCRIPTION OF THE INVENTION In the following, the present invention is described in detail, but the scope of the present invention is not limited to these descriptions, and appropriate modifications can be implemented in addition to the illustrations below, as long as the scope does not deviate from the gist of the present invention. [Forming Method for Pattern Films] In the forming method for pattern films according to the present invention (hereinafter sometimes referred to as "method according to the present invention"), as described above, it is important that, when a film having a desired pattern is formed on a surface of a base material, a desired pattern is formed on the surface of the base material by supplying an ink that includes a film forming material to the aforementioned surface of the base material from a nozzle in a state where heat has been applied to the base material. (Ink) In the method according to the present invention, a liquid that includes a film forming material, that is to say, a metal oxide precursor that becomes a metal oxide through the application of heat, a solution in which a resin is dissolved, a dispersion that contains microscopic metal particles or microscopic resin particles comprising ultramicroscopic particles in the order of nano grains or the like is used as an ink that is used in a nozzle ejecting supply manner, such as an inkjet manner. In the following, the film forming material from among the components that constitute the ink according to the present invention is first described. The film forming material comprises a main material and a sub-material. The main material is a material that becomes a film when the material itself causes a chemical change, such as a metal oxide precursor that is described in detail below, or a material that becomes a film having the same composition, such as metal oxide particles, metal particles, resin particles, or particle-resin composites. On the other hand, the sub-material is a material that enhances the solubility of the main material so as to help its conversion to an ink, a material for promoting a chemical change of the main material, or a material for helping and improving the properties of the main material. The metal oxide precursor, which is one type of material that can be used as the main material, may be any of a variety of metal compounds, without any particular limitations in terms of its type, that have been conventionally known to function as so-called precursors and can generate a metal oxide in the final form of a film in response to heat that has been applied to the base material, and organometallic complexes, metal alkoxides and inorganometallic complexes, for example, are preferably cited. Metal carboxylates such as metal formates, metal acetates, metal propionates, metal stearates, metal naphthenates and metal oxalates, basic salts of these metal carboxylates, as well as complexes where a variety of monodentate ligands or multidentate ligands have coordinated on metal atoms, for example, can be cited as the above described organometallic complexes, and only one type from these may be used, or two or more types may be used together, without particular limitation. Bidentate ligands, such as dicarboxylic acids, oxy carboxylic acids, dioxy compounds, oxy oximes, oxy aldehydes and derivatives of these, dioxy compounds, diketone compounds, keto ester compounds, oxy quinones, tropones, N-oxide compounds, amino carboxylic acids and compounds similar to these, hydroxyl amines, oxines, aldimines, oxy oximes, oxy azo compounds, nitrosonaphthols, triazenes, biurets, formazanes, dithizones, biguanides, glyoximes, dioxy compounds, benzoin oximes, diamines, hydrazine derivatives and dithioethers; tridentate ligands, such as aspartic acid and diethylenetriamine; tetradentate ligands, such as porphines, azaporphines and phthalocyanines; and pentadentate ligands, such as ethylenediaminetetraacetic acid and trissalicylaldehydediimine, for example, can be cited as the above described multidentate ligands, and only one type from these may be used, or two or more types may be used together, without particular limitation. Metal alkoxide monomers, such as titanium tetra-n-butoxide, zirconium tetra-n-butoxide, indium tris-methoxy propoxide, tin (IV) tetraisobutoxide and aluminum tris-sec-isopropoxide, and (partial) hydrolysates of these, as well as hydrolyzed and condensed products of these (such as titanium tetra-n-butoxide tetramer), for example, can be cited as the above described metal alkoxides, and only one type from these may be used, or two or more types may be used together, without particular limitation. Inorganic salts, such as metal sulfates, metal carbonates, metal nitrates and metal halides, as well as metal ammine complexes, for example, can be cited as the above described inorganometallic complexes, and in particular, such as metal nitrates, metal carbonates and metal ammine complexes are preferable, taking it into consideration that acid radicals little remain in a film at low temperatures. In addition, compounds of which the number of valences of the metal atom has been changed by heating the above described variety of metal compounds that have been conventionally known in a solvent if necessary, and compounds of which the portion of ligands is replaced with other groups (such as metal alkoxy carboxylate) are also preferably cited as the metal oxide precursor. From among these metal oxide precursors, organometallic complexes and metal alkoxides are preferable, taking it into consideration that the components, other than the metal oxide, of a metal oxide film that is gained by a method according to the present invention can be easily removed through the application of heat. In addition, organometallic complexes are more preferable, taking it into consideration that the temperature at the time of the above described heat application is low and the metal oxide crystal can be easily generated at a low temperature, and from among these, metal carboxylates and basic salts of these, as well as complexes of oxy carboxylic acids and diketone compounds are particularly preferable. The following can be cited as concrete examples classified as to metal species of the metal oxide precursor. That is to say, in the case where ruthenium oxide (Ru0₂) is generated as the metal oxide, Ru compound complexes of which the ligands are β-diketones, β-keto esters and β-dicarboxylic acids, such as ruthenium trisacetylacetonate, as well as compounds which are gained by heat-processing these in the below described solvent, such as alcohol, are cited. In the case where zinc oxide (ZnO), indium oxide (ln₂0₃) or ferrite is generated, metal carboxylates, such as Zn, In or Fe (alternatively, Co, Ni, Mn, Ba or the like) formates, acetates, propionates and oxalates, Zn compound complexes, In compound complexes or Fe compound complexes (alternatively, Co compound complexes, Ni compound complexes, Mn compound complexes and Ba compound complexes) of which the ligands are oxy carboxylates, can be cited. In the case where ITO is generated, metal carboxylates, such as In formate, acetate, propionate and oxalate, as well as In compound complexes of which the ligands are oxy carboxylic acids, can be cited, and Sn (IV) carboxylates and Sn (IV) alkoxides can also be cited. In the case where cerium oxide (Ce0 ) is generated, metal carboxylates, such as Ce acetate, Ce compound complexes of which the ligands are oxy carboxylic acids, Ce nitrate and the like can be cited. In the case where titanium oxide (Ti0₂) is generated, metal alkoxide compounds, such as Ti tetrabutoxide, metal carboxylates, such as Ti acetate, Ti compound complexes of which the ligands are β-diketones and the like can be cited. In the product that is gained by the forming method for pattern films according to the present invention, the pattern film is not necessarily formed only by a metal oxide (ceramic), but ratlier, the pattern film may comprise a metal or a resin, or a metal or a resin may be mixed into a metal oxide in the pattern film. In a passive element film, for example, the dielectric is a layered body of barium titanate/a metal. Depending on the desired resistance values, examples of the resistor include: films of metals such as nickel; films of electrically conductive oxides derived from such as ruthenium oxide and tin oxide; and composite films comprising dispersions of electrically conductive particles (e.g. carbon black) in resins. Electrodes and wires, for example, comprise: electrically conductive films derived from metals or oxides; or films including electrically conductive polymers. In the present invention, metal oxide particles are also adoptable as the main material of the film forming material. However, for the formation therefrom into metal films at low temperatures, it is preferred that their particle diameters are fine.

Specifically, the particle diameters are favorably not larger than 20 nm, more favorably not larger than 10 nm. As to the metal oxide particles, usually, those which are dispersed and contained in solvents are used as the film forming material. Examples of the main material to obtain the metal film therefrom include metal precursors, and besides, metal particles. Favorable examples of the metal precursors include organometallic complexes, metal alkoxides, and inorganometallic complexes of metals such as copper, silver, gold, and metals of the platinum group, in other words, the same compounds as aforementioned as specific examples of the metal oxide precursor. In addition, if necessary, it can also favorably be adopted that a reducing agent for promoting the metalation is used as a sub-raw material in the ink. As to the metal precursors, usually, those which are dissolved in solvents or therein dispersed and contained are used as the film forming material. In addition, as to the metal particles, it is preferred, for the formation therefrom into metal films at low temperatures, that their particle diameters are fine. Specifically, the particle diameters are favorably not larger than 20 nm, more favorably not larger than 10 nm. As to the metal particles, usually, those which are dispersed and contained in solvents are used as the film forming material. Examples of the main material to obtain the resin film therefrom include resins themselves, resin precursors, and resin particles. Examples of the resin precursors include: various monomers and oligomers (e.g. acrylic types, styrenic types, epoxy types) which can form the resins by polymerization, condensation, or crosslinking; and crosslinking agents. As to these main materials, usually, those which are dissolved in solvents or therein dispersed and contained are used as the film forming material. In addition, in cases of such raw material systems as tend to proceed with their curing in a step in which raw materials for forming the resin film are mixed together, it is favorably adopted that the film forming material is divided into at least two portions, which are spraywise supplied from their respective different nozzles. In addition, as to the resin particles, it is preferred, for the formation therefrom into uniform films, that their particle diameters are fine. Specifically, the particle diameters are favorably not larger than 50 nm, more favorably not larger than 20 nm. As to the resin particles, usually, those which are dispersed and contained in solvents are used as the film forming material. As other main materials, in the present invention, it is possible to also adopt carbon black, metal sulfides, metal nitrides, metal oxide nitrides, and precursors or particles which can form such as alloys. In addition, in cases of so-called composite films such as composite films comprising dispersions of particles (e.g. metal oxide particles, metal particles, or other particles) in resins and composite films comprising metals and metal oxides, it is permissible to use, as the film forming material, materials obtained in a way that a precursor of each component is used as the main material and dissolved or dispersed into ink, and it is also possible to use, as the film forming material, so-called paint compositions in which the aforementioned particles are dispersed and contained and the aforementioned resins are dissolved. Incidentally, even as to the main material, a number of types are jointly used in one pattern film. As the main material in the case where a pattern film comprising a metal oxide in combination with a metal and/or a resin is gained, there is utilized a metal oxide precursor in combination with microscopic metal particles and/or microscopic resin particles (wherein the resin may be a resin in solution form). Examples of the sub-material include the below-described reaction promotors and additives, and these sub-materials may be used in combinations of at least two kinds respectively, if necessary. As to the reaction promotors as the sub-materials, examples of those which promote the film formation by chemically exciting such as oxidization reaction of the main material include the following 1) to 3): 1) in cases where the metal oxide film is obtained: oxidizing agents such as hydrogen peroxide (incidentally, in cases where the metal alkoxide is used as the precursor: catalysts for hydrolysis and condensation); 2) in cases where the metal film is obtained: as aforementioned, reducing agents such as aldehydes and organic amines; and 3) in cases where the resin film is obtained: initiators and catalysts for promoting the polymerization and condensation reactions. The additive as a sub-material is added to the ink if necessary, in order to enhance the stability of the main material in its solubility, or in order to make the main material soluble at a high concentration, and mixed in the range where the effects of the present invention are not damaged. As for such additives, basic substances, such as amine, acid substances, such as carboxylic acids, non-ionic, anionic, cationic and amphoteric surfactants, aromatic rings having π electrons, unsaturated aliphatic hydrocarbons having an unsaturated bond, such as double bond of C = C, and besides, the above described compounds that are listed as polydentate ligands, such as bidentate ligands, are preferably cited. These additives are preferable, taking it into consideration that a small amount of these can take large effects. For example, an amount of use of 0.01 to 5 in the molar ratio relative to the metal atoms in the metal compound precursor can take the effects of an increase in the solubility, and these additives are also preferable taking it into consideration that they do not negatively affect the crystallinity of the gained film. The solvent for making a metal oxide precursor, a resin, microscopic metal particles, or microscopic resin particles be contained in a liquid is not particularly limited, but rather, may be any solvent, as long as this solvent maintains the liquid state in a manner that is appropriate for it to be supplied as microscopic liquid droplets in an inkjet manner as a whole, and excellent application to a base material can be achieved. Water and/or organic solvents, for example, are preferably used as this solvent. Organic solvents having a relatively high polarity, such as alcohols, ketones, aldehydes and esters, are preferable as the above described organic solvent, taking it into consideration that they have a high affinity with and can easily dissolve the metal compound precursor. In particular, ethanol is preferable, from the viewpoint of low toxicity, and solvents having a low boiling point, such as methanol, ethanol and isopropanol, are preferable, taking it into consideration that they allow of easy formation of a film without solvent residue at a low temperature. In the case where a base material having high resistance to heat is used, a film having excellent crystallinity can be easily gained, by making a solvent having a high boiling point be contained as a solvent component, and such a solvent is preferably adopted. Though the content of the main material of the film forming material, that is to say, the metal oxide precursor, resin, microscopic metal particles or microscopic resin particles in the ink (when calculated as metal oxide in the case of a metal oxide film) is not particularly limited, as long as the liquid state that is appropriate for the above described nozzle ejecting manner, such as an inkjet, can be maintained, and appropriate applicability to a base material can be gained, it is preferable for the content to be 0.01 wt% to 20 wt%, it is more preferable for the content to be 0.1 wt% to 10 wt%, and it is still more preferable for the content to be 0.5 wt% to 3 wt%, relative to the entire ink. The amount of the main material of the film forming material or the solvent may be adjusted so that the content of the main material of the film forming material is in the above described range. In the case where the above described content is less than 0.01 wt%, there is a risk that the productivity may be lowered, and in the case where the content exceeds 20 wt%, there is a risk that the film may not have a uniform thickness or may have a low crystallinity. A method for preparing the ink that includes the metal oxide precursor can be illustrated as follows, according to the type of gained metal oxide. In the case of an Ru0 film: It is preferable for the above described Ru oxide precursor to be dissolved in a solvent, and it is particularly preferable to heat-dissolve the above precursor with an alcohol as the solvent. In the case of an ln₂0₃ film: It is preferable to heat-dissolve the above described In oxide precursor in an organic solvent (specifically, alcohol). Furthermore, it is preferable to cause an additive such as amine to coexist as a dissolving aid at the time of preparation. In the case of an ITO film: It is preferable to mix Sn (IV) carboxylate and/or Sn (IV) alkoxides at a rate of Sn/In = 0.1 to 10 atomic percent into the above described liquid prepared for an ln₂0₃ film. Furthermore, it is preferable to cause an additive such as amine to coexist as a dissolving aid at the time of preparation. In the case of a ferrite film: It is preferable to heat-dissolve any of the metal oxide precursors of the following (i) to (v) in an organic solvent (specifically, alcohol), depending on the type of the metal oxide. Furthermore, it is preferable to cause an additive such as amine to coexist as a dissolving aid at the time of preparation, (i) In the case of a magnetite (Fe₃0₄) film, it is preferable to use an iron compound, such as basic iron

(III) acetate or iron (III) acrylate. (ii) In the case of a nickel ferrite (NiFe 0₄) film, it is preferable to use the above described iron compound and a metal carboxylate, such as nickel (II) acetate together, (iii) In the case of a cobalt ferrite (CoFe 0₄) film, it is preferable to use the above described iron compound and a metal carboxylate, such as cobalt (II) acetate together, (iv) In the case of a manganese ferrite (MnFe 0₄) film, it is preferable to use the above described iron compound and a metal carboxylate, such as manganese (II) acetate together, (v) In the case of a barium ferrite (BaFe₂0₄) film, it is preferable to use the above described iron compound and a metal carboxylate, such as barium (II) acetate, or a hydroxide, such as barium hydroxide together. In the case of a ZnO film: It is preferable to heat-dissolve the above described Zn oxide precursor in an organic solvent (specifically, alcohol). Furthermore, it is preferable to cause an additive such as amine to coexist as a dissolving aid at the time of preparation. In the case of a ZnO (M) film: In the case of a film of a solid solution oxide (ZnO (M)) which is gained by doping a metal element M of a different type than Zn into ZnO, it is preferable to mix a carboxylate or alkoxide of the metal element M of a different type than Zn at a rate of M/Zn = 0.1 to 10 atomic percent into the above described liquid prepared for a ZnO film. It is preferable for the metal element M of a different type than Zn to be a metal element of a valence of III, such as In or Al. Furthermore, it is preferable to cause an additive such as amine to coexist as a dissolving aid at the time of preparation. In the case of a Ce0₂ film: It is preferable to dissolve the above described Ce oxide precursor in a solvent of water, an alcohol, such as ethanol, or a mixture of these. In the case of a Ti0₂ film: It is preferable to dissolve the above described Ti oxide precursor in an organic solvent (specifically, an alcohol, such as ethanol). Furthermore, it is preferable to cause an additive such as acetylacetone to coexist as a dissolving aid at the time of preparation, if necessary. Though the viscosity of the ink that includes the film forming material is not particularly limited, it is preferable for it to be, for example, 0.1 cm poise to 100 cm poise, so that it can be supplied satisfactorily in an inkjet manner, and it is more preferable for it to be 1 cm poise to 50 cm poise. In the case where the above described viscosity is less than 0.1 cm poise, there is a risk that a film with a microscopic line width may be difficult to gain, and in the case where it exceeds 100 cm poise, there is a risk that a film having low density or low physical strength may be gained. Though the surface tension of the ink that includes the film forming material is not particularly limited, it is preferable for it to be, for example, 1 dy/cm to 200 dy/cm, so that it can be supplied satisfactorily in an inkjet manner, and it is more preferable for it to be 10 dy/cm to 100 dy/cm. In the case where the above described surface tension is either less than 1 dy/cm or exceeds 200 dy/cm, it becomes difficult to generate liquid droplets by an inkjet method in a piezo manner. (Base Material) The material of the base material that can be used in the method according to the present invention is not particularly limited, but inorganic substances, such as ceramics, including oxides, nitrides, carbonates and the like, and glass; a variety of resins, such as polyester resins, including PET, PBT and PEN, polycarbonate resins, polyphenylene sulfide resin, polyether sulfone resin, polyether imide resin, polyimide resin, amorphous polyolefin resin, polyallylate resins, aramid resins, polyether ether ketone resins, heat resistant resin, such as liquid crystal polymers, and besides, conventionally known resins, such as (meth)acrylic resins, PVC resins, PVDC resins, PVA resins, EVOH resins, polyimide resins, polyamide imide resins, fluororesins, including PTFE, PVF, PGF and ETFE, epoxy resins and polyolefin resins, and materials obtained by vapor deposition of such as aluminum, alumina, or silica onto these various resins (e.g. films, sheets); a variety of metals, such as silver, copper and silicon; and composites of organic substances and inorganic substances, such as glass fiber composite epoxy resins and silica composite epoxy resins, are preferably cited. In addition, the materials of the above described base materials are not particularly limited also in functional aspects, and they may be selected from among, for example: optically, transparent and opaque; electrically, insulators, conductors, p-type or n-type semiconductors, low dielectrics and high dielectrics; and magnetic and non-magnetic substances; in accordance with the application, purpose of use and the like. Though a variety of resins are appropriate for use as the material of the base material, talcing into consideration the effect of lowering the temperature of film formation as a result of the use of an ink according to the present invention, yet heat resistant resins are still preferable, and resins having excellent insulating properties, such as polyimide resins, are more preferable. Film form (including sheet form), plate form, fiber form, layer form and the like, for example, can be cited as the shape and form of the base material, which may be selected in accordance with the application, purpose of use and the like, and thus, the shape and form is not particularly limited, but film form and the like are preferable, taking miniaturization and reduction in weight of the system into consideration. So-called secondary processed products, such as copper pasted films and printed circuit boards, including glass epoxy layer boards and built up layer boards, can also be used as the base material. (Formation of Pattern Film) When the method according to the present invention is implemented, the aforementioned ink and base material are used, and the ink is supplied to a surface of the base material from a nozzle in a state where heat has been applied to the base material, whereby a desired pattern is formed on the surface of the base material. How to supply the ink from the nozzle to the surface of the base material is not particularly limited. For example, there can be adopted such as: a manner as shown in Fig. 1 (a) in which the ink 2 discharged from the nozzle la contacts directly with the base material 7; and besides, a so-called inkjet manner as shown in Fig. 1 (b) which involves causing the ink 2 to fly in the microscopic liquid droplet form from the nozzle la and then attain the surface of the base material 7. In the latter case, the liquid droplet having been ejected from the outlet of the nozzle may attain the surface of the base material while almost maintaining its size or while involving the microminiaturization of the liquid droplet diameter by vaporization of volatile components (e.g. solvents) in the ink or elimination of such as ligands constituting the precursor in the ink. In addition, the liquid droplet may be divided into at least two while flying. It is permitted that, by such as heat radiation from the surface of the base material, a substance having attained the surface of the base material has already been converted into a substance different from the precursor in the liquid droplet having been ejected from the outlet of the nozzle. However, what is important in the present invention is a feature thereof that the application layer having a desired pattern is directly formed. Accordingly, it is important that the liquid droplet getting ejected from the nozzle, or the effective component in this liquid droplet, attains only a pattern film forming place on the surface of the base material. For the above attainment, it is necessary to appropriately select such as nozzle diameter, supply speed from the nozzle, distance between the nozzle and the surface of the base material, temperature of the surface of the base material, and solvent composition of the ink. Their respective favorable conditions are mentioned below. Examples of the gained pattern include single independent patterns in dot form, such as resistors, high dielectrics or transparent electrodes in an electronic circuits, patterns in dot form aligned at uniform intervals, such as photonic crystals, patterns in stripe form, patterns in rectangular form, patterns in parallel lines, patterns in grid form, patterns in concentric form, patterns where grids are formed in each mesh of a grid and the like. The supply of the ink to the surface of the base material is favorably carried out by supplying repeatedly the ink to the same place on the surface of the base material, except cases such as where a single minute pattern in dot form, like the single independent pattern in dot form among the above various patterns, is desired to be formed from a single microscopic liquid droplet ejected from the outlet of the nozzle. The supply of the ink to the surface of the base material is carried out in microscopic liquid droplet form and repeatedly, whereby the microscopic liquid droplets that have reached the surface of the base material are immediately converted to a film by receiving heat from the base material before the next supply. For example, in the case where the film is a metal oxide film, the metal oxide precursor is immediately converted to a film by receiving heat from the base material. In the case where a dispersion that includes microscopic metal particles or microscopic resin particles is used as an ink, the ink that has reached the surface of the base material receives heat from the base material and thereby the solvent is vaporized, thus leaving a metal film or a resin film behind. In this way, the next ink is supplied extremely thinly onto an extremely thin film that has been gained, and the microscopic liquid droplets of this ink that have been supplied next also receive heat from the base material and is thereby immediately converted to an extremely thin film to thus pile up on the preceding extremely thin film. The ink is repeatedly supplied to the surface of the base material by, for example, reciprocating the jet nozzle relative to the base material, so that the above described process is repeated, and thus, a desired film thickness of a desired pattern can be gained. By the method according to the present invention, a pattern film having a desired thickness can be completely formed in a short period of time and at a low heating temperature in the above way. When the above described method according to the present invention is implemented, an ink that includes film forming materials of different types may be supplied from the same nozzle. However, there are cases where it is better not to mix different types of film forming materials in one ink, and also there are cases where it is better to change the type of the solvent or the viscosity of the ink depending on the type of the film forming material. Therefore, in such cases, inks that include different types of film forming materials may be separately supplied from a number of nozzles separated into different systems. For example, an ink that includes only the main material of the film forming material is supplied from a nozzle in the first system, and an ink that includes only a sub-material is supplied from a nozzle in the second system. In the case where the first main material is a metal oxide precursor and a main material other than this is also desired to be added to the pattern film, an ink that includes the second main material is additionally supplied from a nozzle in the third system. For example, when a compound film comprising at least two kinds of metal components (e.g. ferrite, alloys) is formed, if at least two film forming materials, each of which comprises a precursor of each component, are limited, then films having various metal compositions can be formed by supplying the materials from their respective different nozzles at their respective desired speeds. There is a merit that it is unnecessary to prepare the film forming material one by one according to the composition of the film. Even if, in this way, inks that include different main materials, such as metal particles, resin particles, carbon black and a resin, as well as inks that include sub-materials, are separately supplied, they are combined with the first main material at the same supply spot, so that a desired film can be formed. Though heating is the only energy supplying source for the film formation from the supplied film forming material, that is to say, the only excitation means, in the above description, yet excitation means other than heating through conduction of heat from the base material, for example, a means for local irradiation of such as light, heat, electromagnetic waves (e.g. microwaves), and ultrasonic waves and other excitation means, may be used in combination at the same time as, before, or after the supply of an ink to the surface of the base material in order to reduce thermal dose, promote film formations not caused by heating only, and obtain a good quality film even on base materials with low thermal conductivity. For example, there can be cited: means for irradiation of lasers such as ultraviolet laser, visible laser, and infrared laser; and ultraviolet lamp irradiation means such as mercury lamps. In the following, the nozzle, as the ink supplying means, and the heating means, as the film formation exciting means, are described in detail. Though any nozzle may be utilized in the forming method for pattern films according to the present invention, as long as it is a nozzle that can supply an ink in microscopic liquid droplet form, and is not particularly limited to a nozzle in an inkjet manner, yet an inkjet manner is cited as an example in the below description, for the purpose of facilitating its understanding. In general, a part that is provided with a jet nozzle is referred to as an inkjet head, and the number of the jet nozzles provided to the inkjet head is not particularly limited, that is, only one jet nozzle may be provided to the inkjet head (single head) or two or more jet nozzles may be provided to the inkjet head (multi head). In the case of the multi head, the number of the jet nozzles may be appropriately selected in accordance with the ratio of the width of the line of the film to be manufactured to the size of liquid droplets to be jetted (line width/size of liquid droplets). A film having a desired pattern can be easily formed, without any resist, by adopting the inkjet manner, and this manner is very excellent in productivity also from the point of view of time and cost, and can provide very precise pattern formation. When an ink is supplied in reciprocating movements in an inkjet manner, any application unit can be used without particular limitation, as long as it is a unit that can eject an inlc in microscopic liquid droplet form from a jet nozzle. However, it is preferable to apply an inlc in the above described manner by using the below described forming unit for films according to the present invention. The size of liquid droplets of an ink that is ejected from a jet nozzle depends on the tube diameter (inner diameter) of this nozzle, the viscosity and surface tension of the ink, the ink supplying speed and the like and is not particularly limited. However, it is preferable for the maximum diameter to be not greater than 2000 μm, in point of easily forming a metal oxide crystal film having a uniform form and a uniform film thickness distribution at a lower temperature, and it is more preferable for it to be not greater than 500 μm, and it is particularly preferable for it to be not greater than 100 μm. Though, in general, the size of liquid droplets has a lower limit in the micrometers according to current inkjet technology, it can be considered that the formation of liquid droplets having a size in the nanometers will also be possible in the future, and the method according to the present invention will be applicable also in such a case and can provide still greater effects in point of such as lowering the temperature of film formation. Though the speed of inlc supply to the surface of the base material from a jet nozzle is not particularly limited, it is preferable for the speed to be 1 picoliter/min to 10 milliliters/min per jet nozzle, talcing the range of high practical use into consideration, and it is more preferable for the speed to be 10 picoliters/min to 50 microliters/min. The thickness of the gained metal oxide film can be controlled by adjusting the speed of ink supply and also by appropriately adjusting the number of times of applications when the system allows repetitive application (layering) to a portion to which an inlc has once been applied. For example, in the case where a metal oxide film is formed as a resistor element, the resistance value can be easily controlled by controlling the thickness. Here, it can be considered that the reduction of the speed of ink supply to one femtoliter/min or less also becomes possible accompanying the development of the technology of microminiaturizing the tube diameter of jet nozzles and the technology of controlling the increasing speed of inkjet heads or supports to which base materials are secured, and the method according to the present invention will be applicable also in such a case and can provide still greater effects in point of such as lowering the temperature of film formation. In addition, the method according to the present invention can be applied in a preferable manner, even in the case where an ink is supplied through a high speed jet that exceeds 10 milliliters/min. When an inlc is supplied from a jet nozzle, in general, ejecting (jet) is repeated at definite intervals, and this is called pulse supply. In the pulse supply, it is preferable for the pulse width (that is to say, the period of time taken for one-time jet) to be one microsecond to one millisecond, and it is more preferable for it to be 20 microseconds to 50 microseconds. On the other hand, it is preferable for the pulse intervals (that is to say, the period of time from the start of a nth-time jet to the start of a (n + l)th-time jet) to be one microsecond to one millisecond, and it is more preferable for it to be 40 microseconds to 100 microseconds. It is preferable to control the pulse width and the pulse intervals in the above described ranges, in that a film which is uniform in terms of the crystal structure (diameter of crystal grains and orientation of the crystal) and the film thickness distribution can be easily gained. The supply of the inlc to the surface of the base material is carried out in a state where heat has been applied to the base material. That is to say, heat is applied to the base material in advance and/or successively (either continuously or intermittently) so as to gain the state where the base material has a desired temperature when an ink is applied to the surface of the base material. In this way, a method for gaining the state where heat has been applied only to the base material side to which an inlc is supplied is adopted as the method for exciting the metal oxide precursor, and thereby, the temperature under which a film of such as metal oxide is formed can be significantly lowered, in comparison with such as the case where the entirety of the base material is heated after the formation of the application layer. Thus, damaging to the base material as a result of heat can be effectively reduced in the case where the above described variety of resins, for example, are used as the base material. In particular, in the case where an electronic circuit is manufactured by forming metal oxides as a variety of element films, the method according to the present invention can be said to be very appropriate, since, in general, an insulating resin such as a polyimide resin is used as the base material. The temperature of the base material, in general, slightly differs, depending on the type of supplied ink (more specifically, the type of components that become the above described metal oxide), but it is preferable for the temperature to be, for example, in a range from 100°C to 400°C, it is more preferable for the temperature to be in a range from 100°C to 300°C, and it is most preferable for the temperature to be in a range from 100°C to 250°C. In the case where the above described temperature is lower than 100°C, there is a risk that the objective formation of a film of such as metal oxide (crystal) may not be sufficiently achieved, while in the case where the temperature exceeds 400°C, there is a risk that damaging to the base material may become grave, and in addition, the productivity may be lowered, from the point of view of time and cost. The method for heating the base material is not particularly limited, and a known heating unit and method may be adopted. A method for heating a base material by placing the base material on a heater in sheet form, for example, a hot plate, and a method for heating a base material by means of a warm and hot wind fan heater are, for example, generally known, but the method is not limited to these, and a means such as a method for heating a base material by irradiating the base material with ultraviolet rays can also be adopted. By the method according to the present invention, such as a metal oxide film or a metal film can be formed substantially simultaneously with the supply of an ink to the surface of the base material, and in addition, the inlc can be supplied little by little by microscopic amounts, and also, can be layered, and therefore, ideal crystal generation and crystal growth can be promoted, and furthermore, a tough metal oxide film having high physical strength can be formed. (Types of Film) A film that has been formed by the method according to the present invention is useful as a film having a variety of functions, depending on the type of generated metal oxide. Ruthenium oxide (Ru0₂), tin oxide-derived metal oxides, such as antimony doped tin oxide, indium oxide-derived metal oxides, such as tin doped indium oxide, zinc oxide-derived metal oxides, such as In and/or Al doped zinc oxide, titanium oxide-derived metal oxides and the like, for example, are useful as resistor element films. Tin oxide-derived metal oxides, such as antimony doped tin oxide, indium oxide-derived metal oxides, such as tin doped indium oxide, zinc oxide-derived metal oxides, such as In and/or Al doped zinc oxide, and titanium oxide-derived metal oxides are useful as transparent conductive films. Single layer films comprising ferrite-derived metal oxides, such as magnetite, cobalt ferrite and nickel ferrite, as well as layered films of any of these ferrite-derived metal oxides and one of the above described metal oxides that are useful as the transparent conductive films are useful as magnetic films and electromagnetic noise blocking films. Titanate-derived metal oxides, such as barium titanate and strontium titanate, are useful as high dielectric films. Hafnium oxide, zirconium oxide, cerium oxide and aluminum oxide are useful as insulating films. Titanium oxide, zirconium oxide and bismuth oxide are useful as highly refractive films. Metal oxides gained by doping magnetic ions, such as Fe, Co, Ni and Mn, into semiconductor substances, such as titanium oxide and zinc oxide, are useful as thin magnetic semiconductor films. Metal oxides gained by doping lanthanoid-derived metal ions or metal ions, such as Mn, Ag and Cu, into yttrium oxide or zinc oxide are useful as fluorescent films. The method according to the present invention can preferably be adopted in a process for manufacturing an electronic apparatus or a semiconductor mounting board in order to form a functional metal oxide film, such as a conductive film or a high dielectric film. In a manufacturing process for a semiconductor mounting board, for example, the present invention can preferably be adopted in the case where a high dielectric element film, such as barium titanate, a resistor element film, such as one of Ru0₂, Sn0₂ or ITO, or an electromagnetic noise cutting film, such as ferrite, is formed on a mounting board (as the base material) where metal wires, such as of Ag or Cu, and/or semiconductor parts, such as LSI, have been mounted on an insulating board, such as an alumina board, a polyimide board or a glass epoxy layered board. In addition, the present invention can be preferably adopted in the case where a material obtained in a way that electrode wires, such as Ag electrodes, are formed on a portion of such as a PET film or glass is used as the base material and thereon a transparent conductive film pattern is formed or a condenser element is formed by layering a metal film and a barium titanate film (for example, a high dielectric film, such as barium titanate, is formed on the base material on the surface of which a metal film is formed). Besides the above metal oxide film, examples of the film obtained in the present invention include other films such as metal film, organic film, and composite film. Their application fields are not particularly limited, but include many different fields. However, if the above film is exemplified in the semiconductor mounting field, it is exemplified as follows. Films of metals such as silver, copper, gold, and group of platinum are useful as electrodes and electrical wiring. Films of metals such as nickel and ruthenium are useful as resistor element films. Composite films which comprise electrically insulating materials (e.g. resins) and electrically conductive particles (e.g. carbon black particles, tin-doped indium oxide particles) dispersed and contained therein are useful as resistor element films. Films of resins such as polyimide resins are useful as electrically insulating films. Films comprising electrically conductive polymers are_? according to their electric resistances, useful as resistor element films, transparent electrically conductive films, and electrical wiring. [Forming Unit for Pattern Films] A forming unit for pattern films according to the present invention (hereinafter sometimes referred to as "unit according to the present invention") is, as described above, a unit that is used to form a pattern film, and comprises, as concrete means, a means (A) for supplying an ink that includes a film forming material to a surface of a base material from a nozzle and a means (B) for heating the base material. The unit according to the present invention can be appropriately used to implement the above described forming method for pattern films according to the present invention. In the unit according to the present invention, an ink and a base material which are aforementioned. The means (A) for supplying an ink provided to the unit according to the present invention may be a means for allowing an inlc to be supplied to the surface of a base material (that is to say, for example, a means for allowing an ink to be supplied by being sprayed onto the surface of a base material via a jet nozzle that can eject an ink in the form of microscopic liquid droplets), and a variety of supplying manners that have been adopted for conventionally known application units of inkjet manners and the like can be used. A piezo manner for controlling the ejecting (e.g. timing of supply) of an ink by means of a piezoelectric film (controlled by turning on and off the application of a voltage), a manner for controlling the ejecting (e.g. timing of supply) of an ink by means of an air pressure and electromagnetic valve, an electrostatic manner and the like, for example, can be cited, and in particular, it is preferable to supply an ink in a piezo manner, in that microscopic liquid droplets can be easily ejected at short pulse intervals. For example, concretely speaking, the means (A) for supplying an inlc is provided with an ink bottle 3 for containing an inlc 2 and piping (supply lines) 4 for sending an inlc 2 to a jet nozzle of the inkjet head 1 from the ink bottle 3, in addition to an inkjet head 1 having a jet nozzle la, as can be seen in Fig 2. In Fig 2, an XY stage is denoted by 5, a base material holder with a heater that is secured to the top of the XY stage is denoted by 6, a base material that is attached to the top of the base material holder 6 is denoted by 7, a pattern that is formed on the surface of the base material 7 is denoted by 8, and a C0₂ laser irradiation means which is used if necessary is denoted by 9. The ink bottle 3 is provided with a controller 13 for the back pressure of the inkjet head 1, and the piping (supply lines) 4 is provided with a pulse controller 14, and the XY stage 5 is provided with an XY direction controller 15. A laser controller is denoted by 16. In addition, control signals are inputted into these controllers by a personal computer 10. The inkjet head 1 may be provided with only one jet nozzle (single head) or two or more jet nozzles, specifically, in a number of systems, (multi head) with no particular limitation in the number of jet nozzles or the number of systems. In the case of a multi head, the number of jet nozzles may be appropriately selected in accordance with the ratio of the line width of the film to be manufactured to the size of liquid droplets to be sprayed (line width/size of liquid droplets). The tube diameter (inner diameter) of a jet nozzle is not particularly limited, and any diameter ranging from a size in the microns to a size in the millimeters can be applied, and it is preferable for the diameter to be not greater than 1000 μm, in that an application layer for gaining a pattern film having a uniform form and a uniform film thickness distribution can be easily formed at a lower temperature, and it is more preferable for the diameter to be not greater than 100 μm. Here, the present invention can sufficiently preferably be applied also to the following tube diameters if, in the future, tube diameters that can form dots or thin lines in the nanometers or in the angstroms or on the atomic level can be realized as a result of developments in microminiaturization in the nozzle tube diameter and technological improvement in the mechanism for ejecting an inlc in response to the demand of miniaturization in electronic apparatuses, increase in the density of mounting on semiconductor mounting boards and microminiaturization of passive elements and metal wires. The means (B) for heating a base material that is provided to the unit according to the present invention may be a means for allowing heat to be applied to a base material 7 at a desired temperature, and can be appropriately selected and adopted from among conventionally known heating units. In general, as can be seen in Fig 2, a base material holder 6 comprising a heater in sheet form, such as a hot plate, that can heat a base material 7 by placing the base material thereon, and a fan heater that can apply heat to a base material by sending warm or hot wind to the base material can be adopted as examples of the means, but the means is not limited to these, and, for example, a means for heating by irradiating a base material with ultraviolet rays, such as a UV irradiation unit, may also be adopted. Concretely speaking, it is preferable for the means (B) for heating a base material to also be a base material holder to which a base material can be secured, in addition to being a unit that can apply heat, as described above. The unit according to the present invention is favorably provided further with a means (C) for controlling the relative positional relationship between the base material and the nozzle. In a working mode in which the unit according to the present invention is provided further with this means (C), the unit is provided with, for example, the XY stage 5, as can be seen in Fig 2, as the means (C), and the inkjet head 1 in the above described means (A) for supplying an ink is scannable and/or the base material holder 6 that can apply heat in the above described means (B) for heating a base material is moveable, so that the relative positions of the above described inkjet head 1 and base material holder 6 can be arbitrarily controlled with high precision and at high speed (preferably, in at least the reciprocating directions, and more preferably, in both directions X and Y). Thus, an application layer having a pattern in a desired form can be easily formed by controlling the above described relative positions and by controlling the supply of ink by means of the above described means (A) for supplying an inlc. Here, in the control of the above described relative positions, it is preferable for the relative speed between the inkjet head 1 and the base material holder 6 to be in a range from 0.1 mm/sec to 1000 mm/sec, talcing the high practical use range into consideration, though the speed is not particularly limited. Fig 3 shows another example of the means (C) for controlling the relative positional relationship between the base material and the nozzle in the unit according to the present invention, where the inkjet head 1 is moveable in a reciprocating manner in the right and left directions of the drawing figure along a rail 11. In Fig 2, a base material holder with a heater is denoted by 6, a base material that is attached to the top of the base material holder 6 is denoted by 7, a thermocouple for measuring the surface temperature of the base material 7 is denoted by 12, and a personal computer for inputting a control signal into the controller of inkjet head 1 is denoted by 10. In this example, the base material 7 does not move, and the spot to which an ink is supplied is changed only by the movement of the inkjet head 1. A type comprising the combination of Figs. 2 and 3, and a type such that both the nozzle and the substrate are arbitrarily movable, are also included in the working modes of the unit according to the present invention. In the unit according to the present invention, though the size of the space (distance) between the nozzle la of the inkjet head in the above described means (A) for supplying an inlc and the base material that is secured to the base material holder that can apply heat in the above described means (B) for heating the base material is not particularly limited, it is preferable for the space to be set in a range from 0.1 mm to 50 mm, it is more preferable for the upper limit of the space to be 20 mm, and it is still more preferable for the upper limit to be 10 mm, taking the high practical use range into consideration. In the case where the space between the nozzle la of the inkjet head and the base material 7 is too small, there is a risk that: the temperature of the jet nozzle la (inkjet head 1) rises, due to the heat radiated from the base material 1, and the reaction of generating a metal oxide and the like is induced within the jet nozzle, and the solvent in the ink is evaporated, so that the viscosity increases or a film forming material is deposited, and as a result of this, the jet nozzle is clogged, or the crystallinity of the gained metal oxide film is lowered, or the uniformity of the film thickness distribution of the application layer is damaged. In order to avoid such a situation, it is effective to cool the jet nozzle (inkjet head). The unit according to the present invention can be sufficiently applied also to film formation where the above described space is smaller than 0.1 mm, if the unit is provide with a mechanism that can control the space between the nozzle and the base material with high precision, and in addition, is provided with a mechanism that can cool the jet nozzle la (inkjet head 1). The unit according to the present invention may be provided with the aforementioned means for irradiation of such as light, heat, electromagnetic waves, and ultrasonic waves (e.g. the C0₂ laser irradiation means 9) and other excitation means, in addition to the above described means (A) for supplying an inlc, means (B) for heating the base material, and means (C) for controlling the positional relationship. As for the constitutional mode of the unit according to the present invention, the respective means of the above described means (A) for supplying an ink, means (B) for heating the base material, and means (C) for controlling the positional relationship, as well as other means, may be provided in the state where portions thereof or the entirety are integrated, or may be provided in the state where they are independent from each other, and the mode in which these means are provided to the unit is not particularly limited. In the case where a pattern film comprising metal oxide or the like is foπned by using the unit according to the present invention, the speed of ink supply, the size of the liquid droplets of ink and the number of times of repeating the supply of ink can be appropriately controlled, and the film thickness of the film that is gained in this manner can be controlled so as to be in a range from a super lattice level to a size in the millimeters. [Advantages of Method and Unit of Present Invention] If the unit according to the present invention is used, then film formation, such as generation of a metal oxide crystal, can be performed on the surface of a base material substantially simultaneously with the supply of an inlc to the surface of this base material from a jet nozzle, and therefore, the film structure, such as the crystal structure (that is to say, the diameter of the crystal grains and the orientation of the crystal), in the gained film, can sufficiently be controlled. With regard to this, the forming method for pattern films according to the present invention can be said to be a technology of very high superiority to: a conventional technology of gaining a crystal film by exciting an ink through such as application of heat after the ink has once been applied, and a conventional technology for sketching with an inkjet by using an ink that contains metal nano-particles. A pattern film having a desired shape and a desired structure, not to mention a film having a large area and a long film, can be easily formed if the method according to the present invention is implemented using the unit according to the present invention. For example, there can be easily formed: (i) primary structure patterns, such as dots, thin lines, two-dimensional continuous films (daubing all over) and films in disk form, (ii) secondary structure patterns, such as structures where thin lines are arranged at predetermined intervals, structures where thin lines cross two-dimensionally (lattice form or mesh form), and structures where films in the shape of such as dots, disks, and squares are regularly arranged, and besides, (iii) pattern films having such as layered structures which comprise pattern films in any shape of which the compositions and functions are different from each other and structures where pattern films in any shape of which the compositions and functions are different from each other are arranged alternately or cross each other. [Products Comprising Pattern Films] A variety of thin film elements, electronic circuits and the like can be cited as products which are gained by the above described forming method for pattern films according to the present invention. As examples of products according to the present invention comprising a variety of metal oxides (ceramics) and the like, that is to say, examples of pattern films that are practically used, cases of pattern films where a film in a dot form is formed singly or where a number of films are formed at arbitrary or predetermined intervals can be used as resistors and high dielectric bodies in dot form in an electronic circuit or as transparent electrodes, and besides, cases of dot arrangements at uniform intervals can be used as photonic crystals. In addition, cases of pattern films where a film in thin line form having an arbitrary width is singly formed or where a number of films are formed at arbitrary or predetermined intervals can be used as transparent electrodes in a display device, such as an LCD, an organic EL or a touch panel, or in a light emitting device, besides a resistor element film and a high dielectric element film in an electronic circuit. Furthermore, in the method and unit according to the present invention, prior functional parts and electronic circuits can be formed as thin film elements by combining at least two film patterns. For example, a film, in which a Ti0₂ film or metal oxide (e.g. barium titanate)-derived dielectric film and a metal film are layered alternately in the direction vertical to the base material or arranged in a row alternately in the in-plane direction of the base material, is useful as a condenser element. It is possible to form such as a wiring having a controlled resistance value by: forming a transparent electrically conductive film (comprising such as tin-doped indium oxide or aluminum-doped zinc oxide) in the shape of an XY matrix and then joining this film to a metal (e.g. silver) film to be used as a collector; or joining a metal film to a ruthenium oxide film or a film comprising a composite of carbon black and a resin. It is possible to form an electronic circuit by forming the aforementioned passive element film (e.g. resistor film) or condenser element film and an electrical wiring on the base material. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention is more specifically illustrated by the following Examples of some preferred embodiments in comparison with Comparative Examples not according to the present invention. However,, the present invention is not limited to these. Hereinafter, for convenience, the units "weight part(s)" and "liter(s)" may be simply referred to as "part(s)" and "L" respectively. In addition, the unit "weight %" may be referred to as "wt %". The measuring methods and evaluation methods in the Examples and the Comparative Examples, and the forming units for pattern films used in the Examples and the Comparative Examples, are described below. <Existence or Absence of Fine Particulate Metal Oxide in Ink> The gained inlc was observed using a transmission electronic microscope in order to confirm whether or not there existed any fine particulate material. If any fine particulate material was recognized, then elemental analysis by means of an EDX was carried out under the observation with the electronic microscope in order to confirm whether or not any fine particulate metal oxide was contained. <Crystallinity of Film> The existence or absence of the crystallinity of a film portion of a gained base material with a film was confirmed, identified, and evaluated by carrying out thin film X-ray diffraction measurement using a thin film X-ray diffraction unit (made by Mac Science Company, product name: MXP-3VA (model)) under the below described measurement conditions. Concretely speaking, the following measurement conditions were used. (Measurement Conditions): X-rays: CuKαl rays (wavelength: 1.54056 A), 40 kV, 40 mA Scan range: 2Θ = 20° to 80° Scan speed: l°/min Incident angle of X-rays: 0.5° Here, in the case where the diffraction peak intensity was low or the peak was broad in the above described measurement, Raman spectrometry was also carried out for the evaluation, if necessary, in order to enhance the reliability of the evaluation. The Raman spectrometry was carried out using a Raman analyzer (made by Atago Bussan Co., Ltd., product name: T64000) wherein a visible or ultraviolet laser was used as excitation light for the measurement. <Thickness of Film> The cross section of the gained base material with a film was observed using an SEM or measured using a surface shape measuring unit (made by ULVAC, Inc., product name: Delctak 3030). <Appearance of Film> The transparency and hue of the film portion of the gained base material with a film were observed by the eye. <(Surface) Resistance Value of Film> The surface resistance value of the film portion of the gained base material with a film was measured by a four-terminal four-probe method at a limiter voltage of 10 V using a low resistivity meter (product name: Lorester GP) made by Mitsubishi Chemical Corporation. In addition, if the film portion had a pattern in microscopic shape, and as a result, the measurement using the above described low resistivity meter was difficult, then an electrode was formed by means of sputtering or from a conductive paste, and the resistance value (Ω/ϋ) of the film portion was measured using a tester and, if necessary, converted to a surface resistance value. In the case where electrodes (facing electrodes) were provided to film portions by means of wiring and conductive paste, the resistance value between both electrodes was measured with the above described tester, and the resistance value was determined and, if necessary, converted to a surface resistance value. <Temperature of Base Material> The temperature of the base material when the base material was heated was measured by means of a thermocouple. <Forming Unit for Pattern Films> The below described two types of inkjet sketching units were prepared as forming units for pattern films. An inkjet sketching unit (No. 1) is a unit that can print in an inkjet manner, comprising the following components: a base material holder with a heater for heating a base material; an inkjet head which is provided above the base material holder and which can continuously move in a reciprocating manner (scan); and an ink bottle and ink supplying lines for supplying an ink (e.g. substance in liquid form that includes a metal oxide precursor) to (60) jet nozzles (inner diameter: 65 μm) that constitute the inkjet head. Here, the ink supplying lines branch off so as to correspond to the number of the jet nozzles, and the distance between the inkjet head and the base material holder can be set and changed arbitrarily in a range from 1 mm to 50 mm. When this unit is utilized, the precursor solution that has been put inside the ink bottle is fed to the jet nozzles that constitute the inkjet head via the ink supplying lines, and the inlc is ejected from the nozzle ends while the inkjet head is moved, and thus, the ink is ejected to the surface of a base material that is secured to the base material holder, whereby an application layer in a desired pattern shape is formed on the surface of the base material. Another inkjet sketching unit (No. 2) is a unit that can print in an inkjet manner and comprises the following components: a base material holder with a heater for heating a base material which holder can continuously move (scan); an inkjet head that is secured (unmovable) above the base material holder; and an ink bottle and an ink supplying line for supplying an ink (e.g. substance in liquid form that includes a metal oxide precursor) to (one) jet nozzle (inner diameter: 60 μm) that constitutes the inkjet head. Here, the base material holder is movable in both the X direction and the Y direction relative to the position of the inkjet head with a precision of 10 μm while controlling the period of time and the speed of the movement in coordination with the timing of ejecting of the inlc from the inkjet head. The distance between the inkjet head and the base material holder can be arbitrarily set and changed in a range from 1 mm to 50 mm. When this unit is utilized, the precursor solution that has been put in the ink bottle is fed to the jet nozzle that constitutes the inkjet head via the ink supplying line, and the ink is ejected from the nozzle end while the base material holder to which a substrate is secured is being moved, whereby an application layer in a desired pattern shape is formed on the surface of a base material. [Ink Synthesizing Example 1] A reactor made of anti-pressure glass which could be heated from the outside and which was provided with a mixer, a reflux condenser, a thermometer and a nitrogen or air gas inlet was prepared. One part of cerium(III) nitrate hexahydrate and 231 parts of ion-exchanged water were sequentially put into the above described reactor and stirred for one hour at 25°C under an air atmosphere, whereby 232 parts of a Ce containing precursor solution (concentration as Ce0₂: 0.14 wt%),were gained, and this was used as the ink (SI) for the inkjet. Here, no fine particulate metal oxide was recognized in the gained precursor solution. [Ink Synthesizing Example 2] 6 parts of titanium tetraisopropoxide, 192 parts of ethanol, which was used as the solvent, and 2 parts of acetylacetone were sequentially put into the same reactor as that of Ink Synthesizing Example 1 and stirred for one hour at 25 °C under a nitrogen atmosphere, whereby 200 parts of a Ti containing precursor solution (concentration as Ti0₂: 0.9 wt%) were gained, and this was used as the inlc (S2) for the inkjet. Here, no fine particulate metal oxide was recognized in the gained precursor solution. [Ink Synthesizing Example 3] 18 parts of zinc acetate, 0.29 parts of indium acetate, 281 parts of

2-butoxyethanol, which was used as the solvent, and 20 parts of triethylamine, which was used as the additive, were sequentially put into the same reactor as that of Ink Synthesizing Example 1 and stirred under a nitrogen atmosphere, while the temperature was raised from 25°C, and then the resultant mixture was heat-retained at 110°C for 30 minutes, and after that, cooled, whereby 319 parts of a Zn and In containing precursor solution (concentration as ZnO: 2.5 wt%, In/Zn = 1 atomic %) were gained, and this was used as the ink (S3) for the inkjet. Here, no fine particulate metal oxide was recognized in the gained precursor solution. [Ink Synthesizing Example 4] 14 parts of indium acetate, 1 part of tetraisobutoxytin(IV), 245 parts of 2-butoxyethanol, which was used as the solvent, and 6 parts of n-propylamine, which was used as the additive, were sequentially put into the same reactor as that of Ink Synthesizing Example 1 and stirred under a nitrogen atmosphere, while the temperature was raised from 25°C, and then the resultant mixture was heat-retained at 120°C for 30 minutes, and after that, cooled, whereby 266 parts of an In and Sn containing precursor solution (concentration as ln₂0₃: 2.5 wt%, Sn/In = 5 atomic %) were gained. The gained solution was diluted with ethanol so as to have a concentration as ln₂0₃ of 0.25 wt%, and the resultant dilution was used as the inlc (S4) for the inkjet. Here, no fine particulate metal oxide was recognized in the gained precursor solution. [Ink Synthesizing Example 5] 11.46 parts of basic salt of iron (III) acetate, 7.47 parts of nickel (II) acetate anhydride, 205 parts of benzyl alcohol, which was used as the solvent, and 11 parts of n-propylamine, which was used as the additive, were sequentially put into the same reactor as that of Ink Synthesizing Example 1 and stirred under a nitrogen atmosphere, while the temperature was raised from 25 °C, and then the resultant mixture was heat-retained at 110°C for 30 minutes, and after that, cooled, whereby 234 parts of an Ni and Fe containing precursor solution (concentration as NiFe₂0₄: 3 wt%, Ni/Fe = 1/1 (atomic ratio)) was gained, and this was used as the ink (S5) for the inkjet. Here, no fine particulate metal oxide was recognized in the gained precursor solution. [Ink Synthesizing Example 6] 20 parts of ruthenium (III) trisacetylacetonate, 196.6 parts of benzyl alcohol, which was used as the solvent, and 6 parts of acetic acid, which was used as the additive, were sequentially put into the same reactor as that of Ink Synthesizing

Example 1 and stirred under a nitrogen atmosphere, while the temperature was raised from 25°C, and then the resultant mixture was heat-retained at 140°C for 20 minutes, and after that, cooled. Thereafter 222.6 parts of 2-butoxyethanol was added and mixed, whereby 445 parts of an Ru containing precursor solution (concentration as Ru0₂: 1.5 wt%) was gained. The gained solution was diluted with 2-propanol so as to have a concentration as Ru0₂ of 0.5 wt%, and the resultant dilution was used as the ink (S6) for the inkjet. Here, no fine particulate metal oxide was recognized in the gained precursor solution. [Ink Synthesizing Example 7] In the same manner as of Ink Synthesizing Example 6, there was gained 445 parts of an Ru containing precursor solution (concentration as Ru0₂: 1.5 wt%). The same amount of 2-propanol as the gained solution was added to the gained solution to dilute it to a concentration as Ru0₂ of 0.75 wt%, and the resultant dilution was used as the ink (S7) for the inkjet. [Example 1] 1) The inkjet sketching unit (No. 1) was used, and the ink (SI) was put into the ink bottle thereof. 2) A glass substrate was secured to the base material holder and was heat-retained in advance so as to have a surface temperature of 150°C. 3) The distance between the surface of the glass substrate and the inkjet head was fixed to 10 mm. 4) The ink (SI) was fed at a supplying speed of 1 mL/min from the ink bottle while the inkjet head was being moved in a reciprocating manner over a distance of 180 mm at a speed of 360 mm/sec, whereby the ink was ejected onto the glass substrate from the jet nozzles. Here, the number of times of reciprocations was 100, and the ejection of the ink (SI) from the jet nozzles was carried out only to a specific portion having a length of 20 mm in the moving distance of 180 mm only when the head was moving in either a forward or backward direction. In this way, the steps 1) to 4) were carried out, whereby there was gained a substrate (glass substrate with a film) where a film in rectangular form having a length of 20 mm and a width of 7 mm was formed on the surface of the glass substrate. . The appearance of the film portion of the gained glass substrate with a pattern film was almost transparent, though it was slightly whitened, and the thickness of flie film portion was 8 μm. Fig. 4 shows SEM images of the surface and cross section of the glass substrate with a film. In addition, as a result of the thin film X-ray diffractometry of the film portion, it was confirmed that cerium (IV) oxide (Ce0₂) crystals were formed. [Comparative Example 1] A glass substrate with a film was gained by the same process as of Example 1, except that: the glass substrate was not heat-retained in advance in the step 2), and the glass substrate was heated for 180 minutes in a heating furnace of 150°C after the step 4). The film portion of the thus gained glass substrate with a film had an irregularly spread form, the appearance of the film portion was whitened, and the thickness of the film portion was 0.6 μm. As a result of the thin film X-ray diffractometry of the film portion of the gained glass substrate with a film, no diffraction peak assigned to the cerium (IV) oxide crystals was recognized. [Comparative Example 2] The ink (SI) was applied to the surface of a glass substrate by means of a bar coater and dried at normal temperature, and after that, heated for ten minutes in a heating furnace of 300°C, where a glass substrate with a film was gained. The appearance of the film portion of the gained glass substrate with a film was whitened, and the surface thereof was powdery, and the adhesion to the glass substrate was so low that the film easily peeled from the glass substrate. As a result of the thin film X-ray diffractometry of the film portion of the gained glass substrate with a film, no diffraction peak assigned to the cerium (IV) oxide crystals was recognized. [Examples 2 to 6] A variety of base materials with films were gained by the same process as of

Example 1, except that: the types of the ink and base materials, as well as the conditions for film formation, were selected as shown in Table 1. The results of evaluation of the appearance, the thickness, the length and the width of the film portion of the gained base materials with pattern films are shown in Table 1. As a result of the thin film X-ray diffractometry of the film portion of each of the base materials with films that were gained in Examples 3 to 6, the formation of metal oxide crystals, as shown in Table 1, was confirmed. Also, as a result of the thin film X-ray diffractometry of the film portion of the base material with a film that was gained in Example 2, a diffraction pattern assigned to anatase type Ti0₂ was recognized, but the diffraction peak was broad, and therefore, Raman spectrometry was carried out to make assurance double sure. As a result of this, it was confirmed that anatase type Ti0₂ crystals were formed. The results of evaluation of the surface resistance of the respective films of Examples 3 and 4 are also shown in Table 1.

Table 1

[Example 7] 1) The inkjet sketching unit (No. 2) was used, and the ink (S7) was put into the ink bottle thereof. 2) A glass substrate was secured to the base material holder and was heat-retained in advance so as to have a surface temperature of 260°C. Here, this glass substrate was a glass substrate with wire electrodes where two wire electrodes made of silver having a width of 1 mm and a length of 10 mm were formed at an interval of 1 mm in the direction of the length of the wires, and the resistance of each wire electrode itself measured by a tester was 3 Ω, wherein the space between the wire electrodes was not conductive and had a resistance of not less than 1 MΩ. 3) The distance between the surface of the glass substrate and the inkjet head was fixed to 10 mm. 4) The base material holder was moved and adjusted so that the position of the inkjet head (the position of the jet nozzle end) would be over a position 0.5 mm inside from whichever end of one wire electrode was closer to the other wire electrode on the glass substrate (this position is referred to as reference position (0,

0)). 5) The ejection of the ink (S7) was started, and at the same time as this start, the base material holder started to be moved at a speed of 0.4 mm/sec in a manner where the position of the inkjet head was moving from over the reference position to over the above described other wire electrode (this moving direction is referred to as the direction of the X axis), and then, after 5 seconds, the base material holder was stopped (total distance of movement: 2 mm), and the ejection of the ink (S7) was also stopped. During this movement, the ejection of the inlc was intermittently carried out. Concretely speaking, the inlc was ejected once every movement of 30 μm of the base material holder (the amount of the ejection per one time: 200 picoliters). After that, the base material holder was moved so that the position of the inkjet head would return to the ejection start position (reference position). In the above way, the operation from the start of the ejection of the ink to the return of the position of the inkjet head is referred to as one cycle. 6) After the completion of the first cycle, the base material holder was moved so that the position of the inkjet head would shift by 30 μm from the reference position in the direction (direction of the Y axis) perpendicular to the direction of the X axis. The position of the inkjet head after this movement is referred to as position (0, 1). The operation of the second cycle was carried out starting from the reference position (0, 1) in the same manner as in the above described step 5). 7) After that, the same steps as of the above described 6) were repeated, so that the operations up to the nth cycle (cycle where the ejection starts from position (0, n

- 1)) were carried out. In the above way, the steps 1) to 7) were carried out, whereby there was gained a substrate (glass substrate with a film) where a rectangular film having a length of approximately 2 mm and a width corresponding to the number of the cycles was formed between both wire electrodes on the surface of the glass substrate. The appearance of the film portion of the gained glass substrate with a pattern film was in black line form. In addition, the X-ray diffractometry was difficult for the film of n ≤ 100 because of the size of the area. Therefore, a film of n = 500 was manufactured, and the thin film X-ray diffractometry was carried out on the film portion of this film, and as a result, the formation of ruthenium oxide (Ru0₂) crystals was confirmed. Next, the resistance value between both wire electrodes (including the resistance value (3 Ω) of the wire electrodes themselves) was measured. The results are shown in Table 2. Table 2

[Example 8] The same process as of Example 7 was carried out except that: the ink (SI) was used instead of the inlc (S7), and a metal silicon substrate was used instead of the glass substrate (however, the wire electrodes were installed in the same manner) and heat-retained in advance so as to have a surface temperature of 150°C. As a result, there was gained a substrate (metal silicon substrate with a film) where a rectangular film having a length of approximately 2 mm and a width corresponding to the number of the cycles was formed between both wire electrodes on the surface of the metal silicon substrate. The appearance of the film portion of the gained metal silicon substrate with a pattern film was in translucent line form. In addition, as a result of the thin film X-ray diffractometry of the film portion of n = 500, the formation of cerium (IV) oxide crystals was confirmed. The following Examples 9 to 11 are examples where complex oxides were gained by supplying a number of types of inks simultaneously from different nozzles. [Example 9] The same manner as of Example 1 was carried out except that: the number of the ink supplying lines was 60, and 10 out of these had ink bottles containing aqueous hydrogen peroxide (H₂0₂ content: 0.5 wt%) as ink supplying sources, while the remaining 50 had ink bottles containing the inlc (SI) (gained in Ink Synthesizing Example 1) as ink supplying sources. Thin film X-ray diffractometry was carried out on the film portion of the gained substrate with a pattern film. As a result, it was confirmed that cerium (IV) oxide crystals were formed. The X-ray diffraction peak assigned to cerium oxide was sharper than the X-ray diffraction peak of the film portion of the substrate with the film gained in Example 1, and thus, it was confirmed that the crystallinity was excellent. [Example 10] The same manner as of Example 5 was carried out except that: the number of the inlc supplying lines was 60, and 40 out of these had ink bottles containing the ink (S8) (gained in the below described Synthesizing Example 8) as ink supplying sources, and 10 had ink bottles containing the ink (S9) (gained in the below described Synthesizing Example 9) as inlc supplying sources, and the remaining 10 had ink bottles containing the ink (S10) (gained in the below described Synthesizing Example 10) as ink supplying sources. Thin film X-ray diffractometry was carried out on the film portion of the gained substrate with a pattern film. As a result, no diffraction peak assigned to a single oxide of Co, Ni or Fe was observed, but rather, a diffraction pattern assigned to ferrite was gained. Compositional analysis was carried out on the film portion. As a result, it was confirmed that: the atomic ratio of Co : Ni : Fe was 1 : 1 : 4, and thus, the composition of the film was Cθo.5Nio.5θ'Fe₂θ3. [Example 11] The same manner as of Example 10 was carried out except that: 40 out of the 60 inlc supplying lines had ink bottles containing the inlc (S8) as ink supplying sources, and 5 had ink bottles containing the ink (S9) as ink supplying sources, and the remaining 15 had ink bottles containing the ink (S10) as ink supplying sources. Thin film X-ray diffractometry was carried out on the film portion of the gained substrate with a pattern film. As a result, no diffraction peak assigned to a single oxide of Co, Ni or Fe was observed, but rather, a diffraction pattern assigned to ferrite was gained. Compositional analysis was carried out on the film portion. As a result, it was confirmed that: the atomic ratio of Co : Ni : Fe was 3 : 1 : 5, and thus, the composition of the film was Cθo.75Nio.25θ*Fe2θ3. [Ink Synthesizing Example 8] The same reactor as of Synthesizing Example 1 was used, and into this reactor there were sequentially put 19 parts of basic salt of iron (III) acetate, 213 parts of benzyl alcohol as a solvent, and 18 parts of n-propylamine as an additive, and these materials were stirred under a nitrogen atmosphere, while the temperature was raised from 25 °C, and then the resultant mixture was retained at 110°C for 30 minutes, and after that, cooled, whereby 250 parts of an Fe containing precursor solution (concentration as Fe: 0.4 mol/kg) was gained. This solution was used as the ink

(58) for the inkjet. Here, no fine particulate metal oxide was recognized in the gained precursor solution. [Ink Synthesizing Example 9] The same reactor as of Synthesizing Example 1 was used, and into this reactor there were sequentially put 25 parts of nickel (II) acetate tetrahydrate, 213 parts of ethanol as a solvent, and 12 parts of n-propylamine as an additive, and these materials were stirred under a nitrogen atmosphere, while the temperature was raised from 25 °C, and then the resultant mixture was retained at 110°C for 30 minutes, and after that, cooled, whereby 250 parts of an Ni containing precursor solution (concentration as Ni: 0.4 mol/kg) was gained. This solution was used as the ink

(59) for the inkjet. Here, no fine particulate metal oxide was recognized in the gained precursor solution. [Ink Synthesizing Example 10] The same reactor as of Synthesizing Example 1 was used, and into this reactor there were sequentially put 18 parts of cobalt (II) acetate anhydride, 220 parts of 1-propanol as a solvent, and 12 parts of n-propylamine as an additive, and these materials were stirred under a nitrogen atmosphere, while the temperature was raised from 25°C, and then the resultant mixture was retained at 110°C for 30 minutes, and after that, cooled, whereby 250 parts of a Co containing precursor solution (concentration as Co: 0.4 mol/kg) was gained. This solution was used as the ink (S10) for the inkjet. Here, no fine particulate metal oxide was recognized in the gained precursor solution. The following Examples 12 to 13 are examples where other exciting means were used together with the exciting means by application of heat from the substrate. [Example 12] A base material with a pattern film was gained in the same manner as of

Example 4, except that: the substrate was changed to polyimide, and the portion onto which the ink was ejected was continuously irradiated with an infrared laser beam

(C0₂ gas laser, wavelength: 0.6 μm, 100 W) while the ink was ejected from the jet nozzle onto the surface of the glass substrate Thin film X-ray diffractometry was carried out on the film portion of the gained substrate with a film. As a result, it was confirmed that the film comprised

In₂θ3 crystals. The surface resistance of the film was measured and, as a result, confirmed to be 0.5 x 10² Ω/π (1 10³ Ω/π in Example 4, see Table 1), and thus, it was found that this film is superior in conductivity to the film gained in Example 4. [Example 13] A base material with a pattern film was gained in the same manner as of Example 3, except that: the entirety of the substrate was continuously irradiated with light from a mercury lamp (1000 mJ/cm²) while the ink was ejected from the jet nozzle onto the surface of the glass substrate. Thin film X-ray diffractometry was carried out on the film portion of the gained substrate with a film. As a result, it was confirmed that the film comprised

ZnO crystals. The surface resistance of the film was measured and, as a result, confirmed to be 5 x 10⁴ Ω/o (1 x 10⁶ Ω/D in Example 3, see Table 1), and thus, it was found that this film is superior in conductivity to the film gained in Example 3. The following Examples 14 to 17 and Comparative Example 3 are examples where materials other than metal oxide precursors were utilized as the film forming materials. [Example 14] A base material with a pattern film where a rectangular film having a length of

20 mm and a width of 7 mm was formed was gained in the same manner as of

Example 1, except that: the inlc was changed to an Ag ultramicroscopic particle dispersion where an Ag ultramicroscopic particle powder was dispersed in ethanol (average particle diameter of Ag: 8 nm, concentration as Ag: 0.1 wt%), the base material was changed to a polyimide film, the temperature of the surface of the base material was changed to 180°C, and the number of times of reciprocations of the inkjet head was changed to 50 times. The surface resistance of the gained film was measured and found to be not greater than 10 Ω/π, so this film had excellent adhesion to the base material. [Comparative Example 3] A base material with a pattern film was gained in the same manner as of

Example 14, except that: the base material was not heated (surface temperature of base material: 25°C), and instead, a heating process was carried out at 100°C in order to remove the solvent from the application layer after the formation of the application layer with a pattern on the surface of the base material. Neither of the length and width of the gained film stayed in the range of operation of the inkjet head, namely, the length of 20 mm and the width of 7 mm, but rather, the gained film spread both in the direction of the length and in the direction of the width, and in addition, the film thickness was uneven (the film thickness becomes gradually thinner toward the outside in the vicinity of the opposite ends in the direction of the width). Therefore, the value of the surface resistance of the film deflected much without stability during the measurement, so the film could not be said to be a conductive coating film. The gained film also had so low adhesion to the base material as to easily peel from the base material. [Example 15] A base material with a pattern film where a rectangular film having a length of 20 mm and a width of 7 mm was formed was gained in the same manner as of Example 1, except that: the inlc was changed to a ZnO ultramicroscopic particle dispersion where a ZnO ultramicroscopic particle powder was dispersed in 1-butanol (average particle diameter: 10 nm, concentration as ZnO: 0.1 wt%), and the temperature of the surface of the base material was changed to 400°C. The gained film was a film having excellent ultraviolet ray absorbing properties, good transparency excellent in visible light transmissibility, and uniformity in film thickness distribution. [Example 16] A base material with a pattern film where a rectangular film having a length of

20 mm and a width of 7 mm was formed was gained in the same manner as of Example 1, except that: the ink was changed to an ITO ultramicroscopic particle paint where In₂θ3 (ITO) ultramicroscopic particles containing 2 wt% of Sn were dispersed in an acrylic resin solution (average particle diameter of ITO: 25 nm, ITO : acrylic resin (weight ratio) = 7 : 2, solid component concentration: 0.1 wt%, solvent: toluene-1-butanol-mixed solvent), and the temperature of the surface of the base material was changed to 120°C. The gained film was a film in which the ITO ultramicroscopic particles were dispersed in a matrix of the acrylic resin and which was excellent in visible light transmissibility, transparency, and infrared-ray blocking properties and had uniformity in film thickness distribution and such an excellent conductivity that the surface resistance was 3 x 10⁵. [Example 17] A base material with a pattern film where a rectangular film having a length of 20 mm and a width of 7 mm was formed was gained in the same manner as of Example 1, except that: the ink was changed to an acrylic emulsion (solid component concentration: 0.1 wt%, solvent: water). The gained film was a film comprising an acrylic resin and having excellent transparency and uniform film thickness distribution. The following Examples 18 and 19 are examples where an inkjet head with a number of jet nozzles was used. [Example 18] An inkjet unit with an inkjet head having total 60 jet nozzles of 60 μm in hole diameter, which were arranged in numbers of 10 in the lateral direction and in numbers of 6 in the longitudinal direction at intervals of 400 μm both in the longitudinal and lateral directions, was used as the inkjet unit (No. 1). The ink (SI) of Synthesizing Example 1 was utilized as the ink. While the ink supplying speed and the head scanning speed (not less than 40 mm/second as the scanning speed) were controlled so that the ejecting speed would be 360 dpi (drops/inch) and while the jet nozzles were moved in a reciprocating manner over the length of 20 mm in the lateral direction (X direction), the inlc was sent to a glass substrate (its surface temperature had been retained at 285°C in advance), thus being ejected and supplied onto the surface of the glass substrate from the jet nozzles. Here, the number of times of the reciprocations was 20, and the ejection of the ink from the jet nozzles was carried out only when the head was being moved in the forward direction. As a result of the above described operation, a base material with films having a pattern where six films in line form having a width of 130 μm and a length of 20 mm were arranged at definite intervals was gained. After the above described operation, the same six film patterns were gained as a result of the same operation in a position shifted by 7 mm in the Y direction on the surface of the base material. Next, the same operation was carried out except that the direction of the movement of the head was changed to the Y direction. Thereby a base material with films having a pattern where films with a width of 130 μm were formed longitudinally was gained. Optical microscopic images of the gained pattern films in grid form are shown in Figs. 5 (a) and (b). Raman spectroscopy was carried out on the gained films. As a result, it was confirmed that the material of the films was Ce0₂. [Example 19] A base material with pattern films where films having a width of 130 μm and a length of 20 mm were formed in grid form was gained in the same manner as of Example 18, except that: the ink was changed to the ink (S4) that was gained in Synthesizing Example 4, and the temperature of the surface of the substrate was changed to 250°C. It was confirmed from the results of electron beam diffraction and elemental analysis that the gained films were In₂U3 crystal films that contained Sn in a ratio of 5 atomic % to In. INDUSTRIAL APPLICATION The forming method for pattern films according to the present invention is appropriate as, for example, a method for forming a variety of metal oxide pattern films and other pattern films that are usable as element films (thin film elements) for electronic circuits, such as high dielectric element films and resistor element films, as well as electronic circuits, such as transparent electrodes, on surfaces of resin film base materials, comprising such as polyimide or polyester, and other base materials. The forming unit for pattern films and the ink according to the present invention can be appropriately utilized to implement the above described method according to the present invention.

Claims

1. A forming method for pattern films, which is a forming method for a film having a desired pattern on a surface of a base material, characterized in that a desired pattern is formed on the surface of the base material by supplying an ink that includes a film forming material to the surface of said base material from a nozzle in a state where heat has been applied to said base material.

2. The forming method for pattern films according to Claim 1, wherein the supply of said ink from the nozzle is carried out in an inkjet manner.

3. The forming method for pattern films according to Claim 1 or 2, wherein a number of nozzles, each of which is the same as said nozzle, are provided, and inks that include film forming materials of types that are different from each other are separately supplied from said number of nozzles respectively.

4. The forming method for pattern films according to Claim 3, wherein one type from among the different types of film forming materials is a material that becomes a film when the material itself causes a chemical reaction and another type is a reaction promotor.

5. The forming method for pattern films according to any one of Claims 1 to 4, wherein an application layer and/or a film that have been formed on said base material is irradiated with at least one member selected from the group consisting of light, heat, electromagnetic waves, and ultrasonic waves at the same time as and/or after being supplied with heat from the base material.

6. The forming method for pattern films according to any one of Claims 1 to 5, wherein the base material is a resin film.

7. A forming unit for pattern films, which is a unit used to implement the forming method for pattern films as recited in any one of Claims 1 to 6, characterized by comprising a means for supplying an ink that includes a film forming material to a surface of a base material from a nozzle and a means for heating the base material.

8. The forming unit for pattern films according to Claim 7, further comprising a means for controlling the relative positional relationship between said base material and nozzle.

9. The forming unit for pattern films according to Claim 7 or 8, further comprising a means for irradiating an application layer and/or a film that have been formed on the base material with at least one member selected from the group consisting of light, heat, electromagnetic waves, and ultrasonic waves.

10. An ink, which is a material that is used to implement the forming method for pattern films as recited in any one of Claims 1 to 6, characterized by comprising a film forming material.

11. A thin film element, which is gained by the forming method for pattern films as recited in any one of Claims 1 to 6.

12. An electronic circuit, which is gained by the forming method for pattern films as recited in any one of Claims 1 to 6.