WO2005050017A1

WO2005050017A1 - Cryopump

Info

Publication number: WO2005050017A1
Application number: PCT/JP2004/017016
Authority: WO
Inventors: Hidekazu Tanaka
Original assignee: Sumitomo Heavy Industries, Ltd.
Priority date: 2003-11-19
Filing date: 2004-11-16
Publication date: 2005-06-02
Also published as: JPWO2005050017A1

Abstract

A cryopump in which the volume of gas absorbed is increased without increasing the size of the cryopump by providing tubular panels (41, 42) having a surface parallel with the inflow direction of gas at the gas inflow section through which gas flows from a vacuum chamber (8) into a cryopanel (34).

Description

Specification

Cryopump

Technical field

The present invention is used in, for example, a sputtering apparatus, an ion plating apparatus, and a semiconductor manufacturing apparatus, and is a refrigerator-cooled cryopump that obtains a high vacuum by condensing gas molecules into a cryogenic panel and evacuating the panel. About.

Background art

FIG. 1 shows an example of a configuration of a conventional cryopump.

In the figure, reference numeral 10 denotes a cryopump main body, which is connected to a vacuum chamber 8 by a flange 12. The purpose of the cryopump 10 is to increase the degree of vacuum in the vacuum chamber 8. The cryopump 10 includes, for example, a heat shield plate 30, a louver 32, and a cryopanel (also referred to as a two-stage panel) 34, which are cooled by a cryogenic refrigerator 20 connected to the bottom surface thereof. The heat shield plate 30 and the louver 32 are cooled by the one-stage cooling stage (hereinafter, also simply referred to as the one-stage stage) 21 of the cryogenic refrigerator 20, and the louver 32 is cooled through the heat shield plate 30. The cryopanel 34 is cooled by the second (cooling) stage 22. The cryopanel 34 has a shape in which the top of an umbrella is formed in a plane as shown in FIG. 2, is connected to a central cylinder, and has a shape in which several stages are combined.

[0004] However, in the cryopump 10, the condensed gas 9 exhausted and condensed from the vacuum chamber 8 falls on the cryopanel 34 like snow and has a limited amount of occlusion. . Even if the number of stages of the cryopanel was increased, the lower stage could only store gas at the slope of the umbrella, which had little effect on the size of the equipment.

[0005] On the other hand, Japanese Patent Application Laid-Open No. 7-42671 describes that the difference between the pumping speed and the amount of occlusion is to increase the pumping speed by surrounding a certain cryo-panel with a looper-type baffle.

[0006] Further, Japanese Patent Application Laid-Open No. H8-219019 describes that the length of the cryopanel in the gas inflow direction is increased to increase the occlusion amount. [0007] In addition, Japanese Patent Publication No. 7-507855 (US Pat. No. 5,301,511) also describes a configuration similar to that of FIG.

[0008] While enforcing, the periphery of the cryopanel is surrounded by a baffle as described in JP-A-7-42671, or the cryopanel is lengthened as described in JP-A-8-219019. With the method, if the cryopump becomes too large, the problem is not solved. Japanese Patent Application Laid-Open No. 7-42671 describes that cooling may be performed by a refrigerator. However, due to the structure of the refrigerator, if a two-stage stage is installed on the bottom surface and cooled, the overall length of the cryo pump is reduced. However, there is a problem in that the length is considerably long.

[0009] Japanese Patent Publication No. 7-507855 (US Pat. No. 5,301,511) discloses that frost generated by condensed gas prevents narrowing of the gap between the radiation shield and the cryopanel. The object is different from that of the present invention.

Disclosure of the invention

[0010] The present invention has been made to solve the above-described conventional problems, and has as its object to increase the amount of occluded gas without increasing the size of the cryopump.

[0011] The present invention relates to a cryopump having a cryopanel connected to a vacuum chamber for increasing the degree of vacuum, and the gas is supplied to an inflow portion of a gas flowing from the vacuum chamber into the cryopanel. This problem has been solved by providing a condensed gas adsorption member having a surface parallel to the inflow direction.

Further, the condensed gas adsorbing member is opened on the cryopanel side to improve gas escape.

[0013] Further, a plurality of the condensed gas adsorption members are arranged in parallel.

[0014] Further, the outer condensed gas adsorbing member is disposed outside the extension of the cryopanel.

[0015] Further, the interval between the plurality of condensed gas adsorbing members is set to 25 mm or more.

[0016] Further, the condensed gas adsorbing member has a cylindrical shape.

[0017] Further, an inner condensed gas adsorbing member is provided with an L-shaped support portion mounted on the cryopanel.

, And an opening provided therebetween.

[0018] Further, the outer condensed gas adsorbing member has an I-shaped support portion mounted on the cryopanel, It has an opening provided therebetween.

Further, the condensed gas adsorption member is connected to a cooling stage of a refrigerator.

[0020] The present invention also provides a sputtering apparatus and a semiconductor manufacturing apparatus including the cryopump.

According to the present invention, the condensed gas adsorbing member independent of the cryopanel is provided at the gas inflow portion, so that the amount of condensed gas occluded without affecting the amount of occlusion of the conventional cryopanel can be increased. Therefore, it is possible to dramatically increase the amount of condensed gas stored without increasing the size of the apparatus.

[0022] In addition, when the occluded gas increases and the occluded gas cannot be stored any more, it is necessary to stop processes such as sputtering and to raise the temperature of the refrigerator to exhaust the occluded gas. In addition, the intervals at which processes such as sputtering are stopped become longer, and the total operating time is expected to increase, contributing significantly to production.

Brief Description of Drawings

FIG. 1 is a cross-sectional view showing an example of a configuration of a conventional cryopump.

[FIG. 2] A perspective view of an example of the same cryopanel.

FIG. 3 is a cross-sectional view showing a main configuration of a cryopump according to a first embodiment of the present invention.

FIG. 4 is a perspective view showing a configuration of a first cylindrical panel used in the first embodiment.

FIG. 5 is a perspective view showing the configuration of the second cylindrical panel.

[Figure 6] Bottom view

FIG. 7 is a cross-sectional view showing a state where the first and second cylindrical panels are mounted on a two-stage stage.

FIG. 8 is a sectional view showing a configuration of a main part of a second embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

The embodiment of the present invention relates to a cryopump similar to the conventional example shown in FIG. 1 and FIG. 2 as shown in FIG. The two cylindrical panels 41 and 42 having a surface parallel to are arranged on the refrigerator two-stage stage 22 such that the side surfaces thereof are parallel to the gas inflow direction.

The first cylindrical panel 41 having a cylindrical shape made of copper similarly to the cryopanel 34 includes: As shown in FIG. 4, a notch is provided in the lower portion to provide an opening 41A for gas passage, and for example, an L-shaped support portion 41B is attached to the two-stage stage 22 so as to have good heat conduction.

[0027] Similarly to the cryopanel 34, the cylindrical second cylindrical panel 42 formed of copper has an outer diameter larger than that of the first cylindrical panel 41, and is shown in Figs. 5 (perspective view) and 6 (bottom view). As shown in (1), a lower portion is folded to provide an I-shaped support portion 42B having an opening 41A for gas passage, for example, and is attached to the second stage 22 with good heat conduction.

FIG. 7 shows the joined state. Here, it is desirable that the distance L between the cylinders is at least 25 mm so that the sediment does not hinder the gas flow. Note that the joining method is not limited to the bonding, and a screw may be used with a metal such as indium sandwiched therebetween in order to enhance heat conduction.

[0029] The first cylindrical panel 41 and the second cylindrical panel 42 are cooled by the two-stage stage 22 of the cryogenic refrigerator 20 similarly to the conventional cryopanel 34, and separately from the gas storage amount of the cryopanel 34. In addition, the condensed gas 9 can be adsorbed on both sides. Therefore, the amount of occluded gas can be increased.

[0030] In the above embodiment, the force gas in which the cylindrical panel is placed vertically is piled up perpendicular to the direction in which the gas flowing in the direction of gravity flows like snow, so that the gas inflow direction is In the case of the horizontal orientation, as in the second embodiment shown in FIG. 8, even when the cylindrical panels 41 and 42 are placed horizontally, the adsorbed gas is similarly deposited.

In the above embodiment, two cylindrical panels 41 and 42 are added, but one or three or more panels may be used. Further, the shape of the panel is not limited to a cylindrical shape, but may be a rectangular tube shape or a discontinuous plate shape. The number of stages of the cryogenic refrigerator is not limited to two, but may be one or three or more. Further, the direction of the cryogenic refrigerator is not limited to the horizontal type, and may be a vertical type. Industrial potential

The present invention can be used for, for example, a sputtering apparatus, an ion plating apparatus, and a semiconductor manufacturing apparatus.

Claims

The scope of the claims

[I] In a cryo-pump with a cryopanel connected to a vacuum chamber to increase the degree of vacuum,

A cryopump characterized in that a condensed gas adsorbing member having a surface parallel to a gas inflow direction is provided at an inflow portion of a gas flowing from a vacuum chamber to a cryopanel.

[2] The cryopump according to claim 1, wherein the cryopanel side of the condensed gas adsorption member is opened.

3. The cryo pump according to claim 1, wherein a plurality of the condensed gas adsorption members are provided in parallel.

[4] The cryopump according to claim 3, wherein the outer condensed gas adsorbing member is arranged outside an extension of the cryopanel.

5. The cryopump according to claim 3, wherein a distance between the plurality of condensed gas adsorbing members is 25 mm or more.

6. The cryo pump according to claim 1, wherein the condensed gas adsorbing member has a cylindrical shape.

[7] The cryo-device according to claim 6, wherein the inner condensed gas adsorbing member includes an L-shaped support portion mounted on the cryopanel, and an opening provided therebetween. pump.

[8] The cryogenic device according to claim 6, wherein the outer condensed gas adsorbing member includes an I-shaped support portion mounted on the cryopanel and an opening provided therebetween. pump.

[9] The cryopump according to claim 1, wherein the condensed gas adsorption member is connected to a cooling stage of a refrigerator.

[10] A sputtering apparatus comprising the cryopump according to claim 1.

[II] A semiconductor manufacturing apparatus comprising the cryopump according to claim 1.