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WO2004021452A3 - Integrated photosensitive structures and passivation method - Google Patents

Integrated photosensitive structures and passivation method Download PDF

Info

Publication number
WO2004021452A3
WO2004021452A3 PCT/DE2003/002873 DE0302873W WO2004021452A3 WO 2004021452 A3 WO2004021452 A3 WO 2004021452A3 DE 0302873 W DE0302873 W DE 0302873W WO 2004021452 A3 WO2004021452 A3 WO 2004021452A3
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
layer
way
integrated
integrated circuit
Prior art date
Application number
PCT/DE2003/002873
Other languages
German (de)
French (fr)
Other versions
WO2004021452A2 (en
Inventor
Konrad Bach
Original Assignee
X Fab Semiconductor Foundries
Konrad Bach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10239642A external-priority patent/DE10239642B3/en
Priority claimed from DE10239643A external-priority patent/DE10239643B3/en
Application filed by X Fab Semiconductor Foundries, Konrad Bach filed Critical X Fab Semiconductor Foundries
Priority to DE10393435T priority Critical patent/DE10393435D2/en
Priority to PCT/DE2003/002873 priority patent/WO2004021452A2/en
Priority to EP03750301A priority patent/EP1535339A2/en
Priority to AU2003269691A priority patent/AU2003269691A1/en
Publication of WO2004021452A2 publication Critical patent/WO2004021452A2/en
Publication of WO2004021452A3 publication Critical patent/WO2004021452A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention relates to a CMOS/BiCMOS integrated circuit having at least one integrated photosensitive structure (1), such as a photodiode, a photogate, or a photoresistor. Only one individual layer (2) is arranged on the photosensitive area of the circuit, as the last applied layer of a passivation layer system (3; 2) sealing the integrated circuit. Said one layer (2) has an optical thickness (d) for high transmission. In this way, the covering layers can be formed in the region of the photo-sensitive structures of the circuit in such a way that light reflection losses are reduced and the uniformity of the light transparency (transmission) is increased in the distribution above a respective silicon chip, especially in relation to several silicon chips together.
PCT/DE2003/002873 2002-08-29 2003-08-29 Integrated photosensitive structures and passivation method WO2004021452A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE10393435T DE10393435D2 (en) 2002-08-29 2003-08-29 Integrated photosensitive structures and passivation processes
PCT/DE2003/002873 WO2004021452A2 (en) 2002-08-29 2003-08-29 Integrated photosensitive structures and passivation method
EP03750301A EP1535339A2 (en) 2002-08-29 2003-08-29 Integrated photosensitive structures and passivation method
AU2003269691A AU2003269691A1 (en) 2002-08-29 2003-08-29 Integrated photosensitive structures and passivation method

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10239642A DE10239642B3 (en) 2002-08-29 2002-08-29 Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit
DE10239643A DE10239643B3 (en) 2002-08-29 2002-08-29 Method for passivation of CMOS or BiCMOS ICs with integrated photosensitive structures
DE10239642.6 2002-08-29
DE10239643.4 2002-08-29
PCT/DE2003/002873 WO2004021452A2 (en) 2002-08-29 2003-08-29 Integrated photosensitive structures and passivation method

Publications (2)

Publication Number Publication Date
WO2004021452A2 WO2004021452A2 (en) 2004-03-11
WO2004021452A3 true WO2004021452A3 (en) 2004-07-22

Family

ID=31981773

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/002873 WO2004021452A2 (en) 2002-08-29 2003-08-29 Integrated photosensitive structures and passivation method

Country Status (1)

Country Link
WO (1) WO2004021452A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1935035A2 (en) 2005-10-10 2008-06-25 X-FAB Semiconductor Foundries AG Production of self-organized pin-type nanostructures, and the rather extensive applications thereof
DE102005048366A1 (en) 2005-10-10 2007-04-19 X-Fab Semiconductor Foundries Ag A process for the preparation of low-defect self-organized needle-like structures with nano-dimensions in the range below the usual light wavelengths with high aspect ratio
DE102006046131B4 (en) 2006-09-28 2020-06-25 X-Fab Semiconductor Foundries Ag Process for manufacturing an optical interface for integrated optical applications
DE102009012546A1 (en) 2009-03-10 2010-09-23 X-Fab Semiconductor Foundries Ag Mono anti-reflection silicon nitride layer for use on switching circuits with e.g. photodiodes, by single-step plasma enhanced chemical vapor deposition method, is designed as protective layer against data degradation of elements
DE102010010016B4 (en) 2010-03-03 2014-09-11 X-Fab Semiconductor Foundries Ag Method and arrangement for homogenizing the reflection losses of photodiodes in integrated circuits
EP2677545A1 (en) 2012-06-22 2013-12-25 ams AG Method of producing a photodiode with improved responsivity
DE112014006650A5 (en) 2014-08-08 2017-01-26 X-Fab Semiconductor Foundries Ag Anti-reflection of the back of a semiconductor wafer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5101253A (en) * 1984-09-01 1992-03-31 Canon Kabushiki Kaisha Photo sensor with monolithic differential amplifier
US6043115A (en) * 1999-03-25 2000-03-28 United Microelectronics Corp. Method for avoiding interference in a CMOS sensor
US6069378A (en) * 1996-12-05 2000-05-30 Denso Corporation Photo sensor integrated circuit
US6130422A (en) * 1998-06-29 2000-10-10 Intel Corporation Embedded dielectric film for quantum efficiency enhancement in a CMOS imaging device
US6407440B1 (en) * 2000-02-25 2002-06-18 Micron Technology Inc. Pixel cell with high storage capacitance for a CMOS imager

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5101253A (en) * 1984-09-01 1992-03-31 Canon Kabushiki Kaisha Photo sensor with monolithic differential amplifier
US6069378A (en) * 1996-12-05 2000-05-30 Denso Corporation Photo sensor integrated circuit
US6130422A (en) * 1998-06-29 2000-10-10 Intel Corporation Embedded dielectric film for quantum efficiency enhancement in a CMOS imaging device
US6043115A (en) * 1999-03-25 2000-03-28 United Microelectronics Corp. Method for avoiding interference in a CMOS sensor
US6407440B1 (en) * 2000-02-25 2002-06-18 Micron Technology Inc. Pixel cell with high storage capacitance for a CMOS imager

Also Published As

Publication number Publication date
WO2004021452A2 (en) 2004-03-11

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