WO2003098349A3 - Systeme d'eclairage notamment destine a la microlithographie - Google Patents
Systeme d'eclairage notamment destine a la microlithographie Download PDFInfo
- Publication number
- WO2003098349A3 WO2003098349A3 PCT/EP2003/004971 EP0304971W WO03098349A3 WO 2003098349 A3 WO2003098349 A3 WO 2003098349A3 EP 0304971 W EP0304971 W EP 0304971W WO 03098349 A3 WO03098349 A3 WO 03098349A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- illumination system
- microlithography
- scanning direction
- image plane
- raster elements
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0043—Inhomogeneous or irregular arrays, e.g. varying shape, size, height
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003236640A AU2003236640A1 (en) | 2002-05-17 | 2003-05-13 | Illumination system for microlithography |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/150,650 US7006595B2 (en) | 1998-05-05 | 2002-05-17 | Illumination system particularly for microlithography |
US10/150,650 | 2002-05-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003098349A2 WO2003098349A2 (fr) | 2003-11-27 |
WO2003098349A3 true WO2003098349A3 (fr) | 2004-09-02 |
Family
ID=29548339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2003/004971 WO2003098349A2 (fr) | 2002-05-17 | 2003-05-13 | Systeme d'eclairage notamment destine a la microlithographie |
Country Status (3)
Country | Link |
---|---|
US (2) | US7006595B2 (fr) |
AU (1) | AU2003236640A1 (fr) |
WO (1) | WO2003098349A2 (fr) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10329141B4 (de) * | 2003-06-27 | 2008-10-23 | Carl Zeiss Smt Ag | Faltungsgeometrien für EUV-Beleuchtungssysteme |
DE10053587A1 (de) * | 2000-10-27 | 2002-05-02 | Zeiss Carl | Beleuchtungssystem mit variabler Einstellung der Ausleuchtung |
US20050002090A1 (en) * | 1998-05-05 | 2005-01-06 | Carl Zeiss Smt Ag | EUV illumination system having a folding geometry |
WO2005031748A1 (fr) * | 2003-08-27 | 2005-04-07 | Carl Zeiss Smt Ag | Systeme collecteur a incidence normale et a reflexion oblique pour des sources lumineuses, en particulier des sources a decharge de plasma uv extreme |
US7116405B2 (en) * | 2003-12-04 | 2006-10-03 | Johnson Kenneth C | Maskless, microlens EUV lithography system with grazing-incidence illumination optics |
EP1732086A4 (fr) * | 2004-02-12 | 2008-04-16 | Japan Science & Tech Agency | Dispositif de traitement à rayons x mous et procédé de traitement à rayons x mous |
US7283209B2 (en) * | 2004-07-09 | 2007-10-16 | Carl Zeiss Smt Ag | Illumination system for microlithography |
US7405809B2 (en) * | 2005-03-21 | 2008-07-29 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
CN101416117B (zh) | 2006-04-07 | 2014-11-05 | 卡尔蔡司Smt有限责任公司 | 微光刻投影光学系统、工具及其制造方法 |
DE102006020734A1 (de) | 2006-05-04 | 2007-11-15 | Carl Zeiss Smt Ag | Beleuchtungssystem für die EUV-Lithographie sowie erstes und zweites optisches Element zum Einsatz in einem derartigen Beleuchtungssystem |
US20080257883A1 (en) | 2007-04-19 | 2008-10-23 | Inbev S.A. | Integrally blow-moulded bag-in-container having an inner layer and the outer layer made of the same material and preform for making it |
US20150266621A1 (en) | 2007-04-19 | 2015-09-24 | Anheuser-Busch Inbev S.A. | Integrally Blow-Moulded Bag-in-Container Having Interface Vents Opening to the Atmosphere at Location Adjacent to Bag's Mouth, Preform for Making It; and Processes for Producing the Preform and Bag-in-Container |
US20080259298A1 (en) * | 2007-04-19 | 2008-10-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2155932A2 (fr) * | 2007-05-31 | 2010-02-24 | Carl Zeiss SMT AG | Procédé pour produire un élément optique par façonnage, élément optique produit au moyen de ce procédé, collecteur, et système d'éclairage |
JP5074226B2 (ja) * | 2008-02-16 | 2012-11-14 | エスアイアイ・ナノテクノロジー株式会社 | 荷電粒子ビーム装置 |
DE102008000967B4 (de) * | 2008-04-03 | 2015-04-09 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die EUV-Mikrolithographie |
JP5223921B2 (ja) * | 2008-07-14 | 2013-06-26 | 株式会社ニコン | 照明光学系、露光装置、及び露光方法 |
DE102008050446B4 (de) * | 2008-10-08 | 2011-07-28 | Carl Zeiss SMT GmbH, 73447 | Verfahren und Vorrichtungen zur Ansteuerung von Mikrospiegeln |
US8283643B2 (en) * | 2008-11-24 | 2012-10-09 | Cymer, Inc. | Systems and methods for drive laser beam delivery in an EUV light source |
CN102356353B (zh) * | 2009-03-19 | 2014-06-11 | 卡尔蔡司Smt有限责任公司 | 微光刻投射曝光设备的照明系统 |
DE102009032939A1 (de) * | 2009-07-14 | 2011-01-20 | Carl Zeiss Smt Ag | Wabenkondensor, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
US8743342B2 (en) * | 2009-11-17 | 2014-06-03 | Nikon Corporation | Reflective imaging optical system, exposure apparatus, and method for producing device |
EP2354853B1 (fr) * | 2010-02-09 | 2013-01-02 | Carl Zeiss SMT GmbH | Élément de trame optique, intégrateur optique et système d'éclairage d'un appareil d'exposition par projection microlithographique |
DE102011004615A1 (de) * | 2010-03-17 | 2011-09-22 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithografie |
DE102012010093A1 (de) * | 2012-05-23 | 2013-11-28 | Carl Zeiss Smt Gmbh | Facettenspiegel |
JP6170564B2 (ja) | 2012-10-27 | 2017-07-26 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の照明システム |
KR102127715B1 (ko) * | 2013-08-09 | 2020-06-29 | 에스케이실트론 주식회사 | 에피텍셜 반응기 |
DE102013218132A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Kollektor |
DE102013218128A1 (de) * | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Beleuchtungssystem |
JP6715241B2 (ja) | 2014-06-06 | 2020-07-01 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の光学系 |
DE102015219057A1 (de) | 2014-12-15 | 2016-06-16 | Carl Zeiss Smt Gmbh | Beleuchtungssystem für die EUV-Projektionslithografie |
DE102018201457A1 (de) * | 2018-01-31 | 2019-08-01 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie |
DE102019214269A1 (de) | 2019-09-19 | 2021-03-25 | Carl Zeiss Smt Gmbh | Facettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage |
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-
2002
- 2002-05-17 US US10/150,650 patent/US7006595B2/en not_active Expired - Fee Related
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2003
- 2003-05-13 WO PCT/EP2003/004971 patent/WO2003098349A2/fr not_active Application Discontinuation
- 2003-05-13 AU AU2003236640A patent/AU2003236640A1/en not_active Abandoned
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2006
- 2006-02-02 US US11/345,880 patent/US7443948B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5644383A (en) * | 1993-11-11 | 1997-07-01 | Canon Kabushiki Kaisha | Scanning exposure apparatus and device manufacturing method using the same |
US6198793B1 (en) * | 1998-05-05 | 2001-03-06 | Carl-Zeiss-Stiftung Trading As Carl Zeiss | Illumination system particularly for EUV lithography |
EP1067437A2 (fr) * | 1999-07-09 | 2001-01-10 | Carl Zeiss | Composants anamorphoseurs pour la réduction d' un rapport hauteur/largeur dans systèmes d' illumination |
Also Published As
Publication number | Publication date |
---|---|
US7443948B2 (en) | 2008-10-28 |
US20060245540A1 (en) | 2006-11-02 |
AU2003236640A8 (en) | 2003-12-02 |
US20030086524A1 (en) | 2003-05-08 |
AU2003236640A1 (en) | 2003-12-02 |
US7006595B2 (en) | 2006-02-28 |
WO2003098349A2 (fr) | 2003-11-27 |
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