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WO2003096769A1 - High frequency reaction processing system - Google Patents

High frequency reaction processing system Download PDF

Info

Publication number
WO2003096769A1
WO2003096769A1 PCT/JP2003/005662 JP0305662W WO03096769A1 WO 2003096769 A1 WO2003096769 A1 WO 2003096769A1 JP 0305662 W JP0305662 W JP 0305662W WO 03096769 A1 WO03096769 A1 WO 03096769A1
Authority
WO
WIPO (PCT)
Prior art keywords
high frequency
outer container
processing system
coupling section
reaction processing
Prior art date
Application number
PCT/JP2003/005662
Other languages
French (fr)
Japanese (ja)
Inventor
Toshiyuki Takamatsu
Original Assignee
Toshiyuki Takamatsu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiyuki Takamatsu filed Critical Toshiyuki Takamatsu
Priority to JP2004508507A priority Critical patent/JP3637397B2/en
Priority to US10/513,427 priority patent/US20050212626A1/en
Publication of WO2003096769A1 publication Critical patent/WO2003096769A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/126—Microwaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/129—Radiofrequency

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A high frequency reaction processing system comprising an outer container (40) made of a dielectric material and having two end faces closing the inner cavity, one or more than one high frequency coupling section (42) disposed at an arbitrary position on the outer surface of the outer container (40), one or more than one inner container (41) made of a dielectric material and having two end faces closing the inner cavity disposed at a position for receiving a high frequency wave incoming through the high frequency coupling section (42) without touching the inner side face of the outer container (40), and a part (43) made of a conductive material, for coating the outer surface of the outer container except for the part provided with the high frequency coupling section (42) and sustaining the potential at a level equal to the ground potential of a high frequency line.
PCT/JP2003/005662 2002-05-07 2003-05-06 High frequency reaction processing system WO2003096769A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004508507A JP3637397B2 (en) 2002-05-07 2003-05-06 High frequency reaction processing equipment
US10/513,427 US20050212626A1 (en) 2002-05-07 2003-05-06 High frequency reaction processing system

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2002167849 2002-05-07
JP2002167850 2002-05-07
JP2002-167849 2002-05-07
JP2002-167850 2002-05-07
JP2002-307626 2002-09-17
JP2002-307627 2002-09-17
JP2002307626 2002-09-17
JP2002307627 2002-09-17
JP2003-38959 2003-01-14
JP2003038959 2003-01-14

Publications (1)

Publication Number Publication Date
WO2003096769A1 true WO2003096769A1 (en) 2003-11-20

Family

ID=29424811

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/005662 WO2003096769A1 (en) 2002-05-07 2003-05-06 High frequency reaction processing system

Country Status (2)

Country Link
JP (1) JP3637397B2 (en)
WO (1) WO2003096769A1 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007520880A (en) * 2004-01-12 2007-07-26 アクセリス テクノロジーズ インコーポレーテッド Gas distribution plate assembly for plasma reactor
JP2008177131A (en) * 2007-01-22 2008-07-31 Shibaura Mechatronics Corp Plasma generating device, plasma treatment device and plasma treatment method
JP2013134837A (en) * 2011-12-26 2013-07-08 Tokyo Electron Ltd Plasma generation device and plasma processing apparatus
JP2014524106A (en) * 2011-06-24 2014-09-18 リカーボン，インコーポレイテッド Microwave resonant cavity
JP2015128742A (en) * 2014-01-07 2015-07-16 マイクロ波化学株式会社 Chemical reaction device, and chemical reaction method
JP2015142904A (en) * 2014-11-13 2015-08-06 マイクロ波化学株式会社 Chemical reaction device and chemical reaction method
KR101614028B1 (en) 2013-05-27 2016-04-20 가부시키가이샤 아도테쿠 프라즈마 테쿠노로지 Cavity resonator of microwave plasma generating apparatus
JP2016520797A (en) * 2013-03-13 2016-07-14 ラドム コーポレイションＲａｄｏｍ Ｃｏｒｐｏｒａｔｉｏｎ Microwave plasma spectrometer using a dielectric resonator.
US10337998B2 (en) 2017-02-17 2019-07-02 Radom Corporation Plasma generator assembly for mass spectroscopy
JPWO2021192810A1 (en) * 2020-03-23 2021-09-30
WO2024024817A1 (en) * 2022-07-27 2024-02-01 株式会社アビット・テクノロジーズ Microwave plasma generation device, microwave plasma processing device, and microwave plasma processing method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471097A (en) * 1987-09-10 1989-03-16 Mitsubishi Electric Corp Plasma device
US5082517A (en) * 1990-08-23 1992-01-21 Texas Instruments Incorporated Plasma density controller for semiconductor device processing equipment
US5235251A (en) * 1991-08-09 1993-08-10 The United States Of America As Represented By The Secretary Of The Air Force Hydraulic fluid cooling of high power microwave plasma tubes
US5262610A (en) * 1991-03-29 1993-11-16 The United States Of America As Represented By The Air Force Low particulate reliability enhanced remote microwave plasma discharge device
JPH0760111A (en) * 1993-08-26 1995-03-07 Toshiba Corp Photochemical reactor
JPH09115894A (en) * 1995-07-10 1997-05-02 Applied Materials Inc Microwave plasma base applicator
JPH09312285A (en) * 1996-02-14 1997-12-02 Applied Materials Inc Double wall microwave plasma applicator
JP2000260596A (en) * 1999-03-11 2000-09-22 Hitachi Ltd Plasma apparatus
JP2003096570A (en) * 2001-09-20 2003-04-03 Kobe Steel Ltd Method and apparatus for plasma treatment
JP2003159314A (en) * 2001-11-27 2003-06-03 Hitachi Ltd Uv sterilizing apparatus

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471097A (en) * 1987-09-10 1989-03-16 Mitsubishi Electric Corp Plasma device
US5082517A (en) * 1990-08-23 1992-01-21 Texas Instruments Incorporated Plasma density controller for semiconductor device processing equipment
US5262610A (en) * 1991-03-29 1993-11-16 The United States Of America As Represented By The Air Force Low particulate reliability enhanced remote microwave plasma discharge device
US5235251A (en) * 1991-08-09 1993-08-10 The United States Of America As Represented By The Secretary Of The Air Force Hydraulic fluid cooling of high power microwave plasma tubes
JPH0760111A (en) * 1993-08-26 1995-03-07 Toshiba Corp Photochemical reactor
JPH09115894A (en) * 1995-07-10 1997-05-02 Applied Materials Inc Microwave plasma base applicator
JPH09312285A (en) * 1996-02-14 1997-12-02 Applied Materials Inc Double wall microwave plasma applicator
JP2000260596A (en) * 1999-03-11 2000-09-22 Hitachi Ltd Plasma apparatus
JP2003096570A (en) * 2001-09-20 2003-04-03 Kobe Steel Ltd Method and apparatus for plasma treatment
JP2003159314A (en) * 2001-11-27 2003-06-03 Hitachi Ltd Uv sterilizing apparatus

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007520880A (en) * 2004-01-12 2007-07-26 アクセリス テクノロジーズ インコーポレーテッド Gas distribution plate assembly for plasma reactor
JP2008177131A (en) * 2007-01-22 2008-07-31 Shibaura Mechatronics Corp Plasma generating device, plasma treatment device and plasma treatment method
JP2014524106A (en) * 2011-06-24 2014-09-18 リカーボン，インコーポレイテッド Microwave resonant cavity
JP2013134837A (en) * 2011-12-26 2013-07-08 Tokyo Electron Ltd Plasma generation device and plasma processing apparatus
US10285256B2 (en) 2013-03-13 2019-05-07 Radom Corporation Microwave plasma spectrometer using dielectric resonator
US10863611B2 (en) 2013-03-13 2020-12-08 Radom Corporation Microwave plasma spectrometer using dielectric resonator
JP2016520797A (en) * 2013-03-13 2016-07-14 ラドム コーポレイションＲａｄｏｍ Ｃｏｒｐｏｒａｔｉｏｎ Microwave plasma spectrometer using a dielectric resonator.
JP2016522533A (en) * 2013-03-13 2016-07-28 ラドム コーポレイションＲａｄｏｍ Ｃｏｒｐｏｒａｔｉｏｎ Plasma generator using dielectric resonator
KR101614028B1 (en) 2013-05-27 2016-04-20 가부시키가이샤 아도테쿠 프라즈마 테쿠노로지 Cavity resonator of microwave plasma generating apparatus
JP2015128742A (en) * 2014-01-07 2015-07-16 マイクロ波化学株式会社 Chemical reaction device, and chemical reaction method
JP2015142904A (en) * 2014-11-13 2015-08-06 マイクロ波化学株式会社 Chemical reaction device and chemical reaction method
US10337998B2 (en) 2017-02-17 2019-07-02 Radom Corporation Plasma generator assembly for mass spectroscopy
US10900907B2 (en) 2017-02-17 2021-01-26 Radom Corporation Portable plasma source for optical spectroscopy
JPWO2021192810A1 (en) * 2020-03-23 2021-09-30
WO2021192810A1 (en) * 2020-03-23 2021-09-30 株式会社エス・エス・ティ High frequency reaction treatment device and high frequency reaction treatment system
JP7289170B2 (en) 2020-03-23 2023-06-09 株式会社エス・エス・ティ High-frequency reaction processing equipment and high-frequency reaction processing system
WO2024024817A1 (en) * 2022-07-27 2024-02-01 株式会社アビット・テクノロジーズ Microwave plasma generation device, microwave plasma processing device, and microwave plasma processing method

Also Published As

Publication number Publication date
JP3637397B2 (en) 2005-04-13
JPWO2003096769A1 (en) 2005-09-15

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