WO2002035603A1

WO2002035603A1 - Wafer prover device, and ceramic substrate used for wafer prover device

Info

Publication number: WO2002035603A1
Application number: PCT/JP2001/003770
Authority: WO
Inventors: Atsushi Ito; Yasuji Hiramatsu; Yasutaka Ito
Original assignee: Ibiden Co., Ltd.
Priority date: 2000-10-18
Filing date: 2001-05-01
Publication date: 2002-05-02

Abstract

A wafer prover device which is capable of canceling stray capacitors existing in measuring circuits and hence free from noise and malfunction due to stray capacitors, characterized by comprising a wafer prover having a chuck top conductor layer formed on the surface of a ceramic substrate and a guard electrode disposed on the ceramic substrate, and a power source, wherein the power source applies voltage such that the chuck top conductor layer and the guard electrode are at substantially the same potential.

Description

Wafer prober device and ceramic substrate used in wafer prober device

Technical field

The present invention relates to a wafer prober device and a ceramic substrate which are mainly used in the semiconductor industry, include a thin and light wafer prober having excellent temperature rise / fall characteristics, and do not malfunction. Background art

Semiconductors are extremely important products required in various industries. Semiconductor chips are manufactured by, for example, slicing a silicon single crystal to a predetermined thickness to produce a silicon wafer, and then applying various types of silicon wafers to the silicon wafer. It is manufactured by forming circuits and the like.

In the manufacturing process of this semiconductor chip, a probing process is required to measure and check whether the electrical characteristics operate as designed at the silicon wafer stage, and a so-called prober is used for that purpose. .

As such a prober, for example, Japanese Patent No. 2587279, Japanese Patent Publication No. Hei 3-40947, Japanese Patent Application Laid-Open No. Hei 11-31724, etc. A wafer prober having a chuck top made of metal such as stainless steel or stainless steel is disclosed.

In such a wafer prober, for example, a silicon wafer is placed on a wafer prober, a probe card having tester pins is pressed against the silicon wafer, and a continuity test is performed by applying a voltage while heating and cooling.

However, the following problems have been encountered with the wafer propeller having such a metal chuck top.

First, since it is made of metal, the thickness of the chuck top must be as thick as about 15 mm. The reason why the chuck top is made thicker is that a thin metal plate is pressed by the tester pin of the probe card, and the metal plate of the chuck top is warped or distorted. Damaged silicon wafer This is because they are damaged or tilted.

For this reason, there is a problem that the force required to increase the thickness of the chuck top results in an increase in the weight and a bulkiness of the chuck top.

Despite the use of a metal with high thermal conductivity, the temperature rise and fall characteristics are poor, and the temperature of the chuck top plate does not quickly follow changes in voltage or current, so temperature control is performed. It is difficult to control the temperature if a silicon wafer is placed at a high temperature.

The inventors of the present invention have conducted intensive studies to solve the above problems, and as a result, instead of a metal chuck top, a rigid ceramic has been used as a substrate, a conductor layer has been provided on the surface thereof, and this has been used as a chuck top conductor. It was recalled that the ceramic substrate was provided with a heating means.

However, since the ceramic substrate has a high dielectric constant, a silicon wafer is placed on the chuck top conductor layer, and when a tester pin with a probe force with tester pins is pressed against this silicon wafer, a continuity test is performed. A stray capacitor was generated in the measurement circuit due to the high dielectric property of the ceramic substrate, and noise was generated due to the stray capacitor, causing a malfunction of the wafer prober device. Summary of the Invention

The present invention has been made in view of the above-described problems, and can cancel a storage capacitor interposed in a measurement circuit, so that noise due to the storage capacitor does not occur and no malfunction occurs. An object of the present invention is to provide a wafer prober device and a ceramic substrate used in the wafer prober device.

In the wafer prober device of the present invention, a chuck top conductor layer is formed on a surface of a ceramic substrate, and a wafer prober having a guard electrode disposed on the ceramic substrate (hereinafter, a chuck top conductor layer is formed on the surface thereof). And a ceramic substrate on which a guard electrode is disposed) and a power source device including a power supply, A wafer prober device, wherein a voltage is applied by the power supply so that the chuck top conductor layer and the guard electrode have substantially the same potential.

Further, the ceramic substrate of the present invention is characterized in that a chuck top conductor layer and a guard electrode are respectively disposed on both main surfaces thereof, and a ground electrode is disposed on the guard electrode via an insulator. This is a ceramic substrate used in a wafer prober device.

The ceramic substrate of the present invention is used in the above-described wafer prober device, and specifically functions as a stage for probing a semiconductor wafer (a so-called chuck top). As described above, the ceramic substrate is a component of the wafer prober device, and therefore will be described below together with the wafer prober device. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a cross-sectional view schematically showing an example of a wafer prober device including a wafer prober of the present invention.

FIG. 2 is a plan view of the wafer prober shown in FIG.

FIG. 3 is a bottom view of the wafer prober shown in FIG.

FIG. 4 is a sectional view taken along line AA of the wafer prober shown in FIG.

FIG. 5 is a cross-sectional view schematically showing one example of a wafer prober constituting the wafer prober device of the present invention.

FIG. 6 is a cross-sectional view schematically showing one example of a wafer prober constituting the wafer prober device of the present invention.

FIG. 7 is a cross-sectional view schematically showing one example of a wafer prober constituting the wafer prober device of the present invention.

FIG. 8 is a cross-sectional view schematically showing one example of a wafer prober constituting the wafer prober device of the present invention.

FIG. 9 is a cross-sectional view schematically showing a case where the wafer prober used in the present invention is combined with a support.

FIG. 10 shows (a) a combination of the wafer prober used in the present invention with another support. A case which has a longitudinal sectional view schematically showing, (b), the B- _t Figure 1 1 is a B line cross-sectional view, (a) ~ (d) is a wafer prober to be used in the present invention It is sectional drawing which shows a part of manufacturing process typically.

FIGS. 12A to 12G are cross-sectional views schematically showing a part of the manufacturing process of the wafer prober used in the present invention. Explanation of reference numerals

101, 201, 301, 401, 501 Wafer prober

2, 72 Chuck top conductor layer

3, 73 ceramic substrate

5, 75 guard electrode

6, 76 Ground electrode

7 groove

8, 78 Suction hole

10 Insulation

1 1 Support

12 outlet

1 3 Suction port

14 Refrigerant inlet

1 5 Support column

1 6, 17, 18, 87 Through hole

1 80 blind hole

1 9, 190, 191 External terminal pins

4 1, 42, 7 1 Heating element

4 1 0 Protective layer

43 metal wire

44 ぺ Noreche element

440 thermoelectric element

441 ceramic substrate 5 2 Part where conductor layer is not formed Detailed disclosure of invention

A wafer prober device according to the present invention includes a wafer prober having a chuck top conductor layer formed on a surface of a ceramic substrate, and a guard electrode disposed on the ceramic substrate, and a wafer prober device including a power supply. A voltage is applied by the power supply so that the chuck top conductor layer and the guard electrode have substantially the same potential.

“Approximately” means that the potential difference between the chuck top conductor layer and the guard electrode is within 10% of the potential of the chuck top conductor layer.

In the present invention, a voltage is applied to the chuck top conductor layer formed on the surface of the ceramic substrate and the guard electrode provided on the ceramic substrate so as to have the same potential. An intervening stray capacitor can be canceled, and generation of noise due to the stray capacitor can be prevented. As a result, no malfunction occurs in the wafer prober device. Further, in the present invention, since a rigid ceramic substrate is used, and a guard electrode and a ground electrode or a ground electrode are disposed on the ceramic substrate, these have a reinforcing effect, and are provided by the tester pins of the probe card. Even when the chuck top is pressed, the chuck top does not warp, and the thickness of the chuck top can be made smaller than that of metal.

In addition, since the thickness of the chuck top can be made smaller than that of a metal, even if the ceramic has a lower thermal conductivity than the metal, the heat capacity is reduced as a result, and the temperature rise and temperature fall characteristics can be improved. .

FIG. 1 is a conceptual diagram schematically showing an embodiment of a wafer prober device including a wafer prober of the present invention. 2 is a plan view of the wafer prober shown in FIG. 1, FIG. 3 is a bottom view thereof, and FIG. 4 is a cross-sectional view of the wafer prober shown in FIG.

The wafer prober i 01 constituting this wafer prober device has a circular shape in plan view. A concentric groove 7 is formed on the surface (adsorption surface) of the ceramic substrate 3, and a plurality of suction holes 8 for sucking a silicon wafer are provided in a part of the groove 7. The chuck top conductor layer 2 for connecting to the electrode of the silicon wafer is formed in a circular shape on most of the ceramic substrate 3 including 7.

On the other hand, a guard electrode 5 and a ground electrode 6 are provided inside the ceramic substrate 3, and the guard electrode 5 is connected to a constant voltage power supply via through holes 16, external terminal pins (not shown), and wiring. 3 Connected to 1.

A heating element 41 having a concentric circular shape in plan view as shown in FIG. 3 is provided on the bottom surface of the ceramic substrate 3 for controlling the temperature of the silicon wafer. The external terminal pin 191 is connected and fixed.

The guard electrode 5 is an electrode provided to cancel the stray capacitor interposed in the measurement circuit due to the ceramic substrate having a relatively high dielectric constant. (That is, the same potential as the ground potential of the chuck top conductor layer 2 in FIG. 1). That is, a voltage of 100 V is normally applied between the ground electrode 6 and the chuck top conductor layer 2 and between the duland electrode 6 and the guard electrode 5, and the chuck top conductor layer 2 The same ground potential is applied to the guard electrode 5 and the guard electrode 5 to cancel the stray capacitor.

The ground electrode 6 is provided for canceling noise from the temperature control means, and is grounded. A predetermined voltage (V ₂ ) is applied to the heating element 41 to generate heat to a predetermined temperature. Have been. The voltage applied to the heating element 41 is DC.

In the wafer prober device shown in FIGS. 1 to 4, the guard electrode 5 and the ground electrode 6 are formed inside the ceramic substrate 3, but the guard electrode and the round electrode are provided on the surface of the ceramic substrate. It may be.

FIG. 8 shows a chuck substrate in which a chuck top conductor layer and a guard electrode are provided on both main surfaces of a ceramic substrate, respectively, and a ground electrode is provided on the guard electrode via an insulator. It is sectional drawing which shows typically.

In this wafer prober (ceramic substrate), a chuck top conductor layer 72 is formed on the suction surface, and a guard electrode 75 is formed on the bottom surface. Ceramic 扳 77 such as anolemina is formed on the guard electrode 75. Arranged and placed on ceramic plate 7 7 A ground electrode 76 is provided.

Note that the ceramic plate 77 is connected via an insulating layer 74 formed on the ceramic substrate 73, and between the ceramic substrate 73 and the ceramic plate 77 is insulated from the guard electrode 75. The suction hole 78 is formed so as to penetrate the ceramic substrate 73, the insulating layer 74 and the ceramic plate 77.

The insulating layer 74 is formed, for example, by applying an inorganic adhesive such as silica sol to the bottom surface of a ceramic substrate, and then stacking a ceramic plate 77 thereon and subjecting the ceramic plate to heat treatment. Has properties and adhesive strength.

In this wafer prober (ceramic substrate 73), a heating element 71 is provided inside. The heating element may be provided in contact with the ground electrode via an insulator such as silicon rubber, resin, or ceramic.

The wafer prober (ceramic substrate) configured as described above has the same function as the wafer prober (ceramic substrate) shown in FIG.

The wafer prober constituting the wafer prober device of the present invention has, for example, a configuration as shown in FIGS. In the following, each member constituting the wafer prober device and other embodiments of the wafer prober device of the present invention will be sequentially described in detail.

As described above, the ceramic substrate 3 constituting the wafer prober is provided with the guard electrode 5 for canceling the storage capacitor and the ground electrode 6 for canceling noise from the temperature control means.

Desirably, these conductor layers are provided in a lattice shape as shown in FIG. The adhesion between the ceramics above and below the conductor layer can be improved, and cracks do not occur even when a thermal shock is applied, and peeling does not occur at the interface between the guard electrode 5, the ground electrode 6 and the ceramic. is there.

The portion of the lattice where the conductor is not formed may be rectangular as shown in FIG. 4, or may be circular or elliptical. If the non-conductor-formed portion is rectangular, a radius may be provided at the corner.

Examples of the guard electrode 5 and the ground electrode 6 include copper, titanium, chromium, and nickel. Kel, noble metals (gold, silver, platinum, etc.), at least one selected from refractory metals such as tungsten and molybdenum, or at least one selected from conductive ceramics such as tungsten carbide and molybdenum force Can be used. It is preferable that at least a part of the guard electrode 5 and the Z or the ground electrode 6 is made of the conductive ceramic.

The thickness of the shield electrode 5 and the ground electrode 6, l~2 0 _M m is desirable. If the thickness of these electrodes is less than 1, the resistance will increase, while if it exceeds 2, the thermal shock resistance will decrease.

The constant voltage power supplies 31, 32, 33, 81, 82, and 83 are not particularly limited, and a commonly used device for generating a constant voltage can be used. The constant-voltage power supplies 31 and 81 are inserted between the guard electrodes 5 and 75 and the ground electrodes 6 and 76, and between the chuck top conductor layers 2 and 72 and the ground electrodes 6 and 76. These voltages are controlled. Further, another constant voltage power supply 33, 83 is connected to the tester pins of the probe card 601 to control the voltage of the probe card 601.

In the wafer prober 101 shown in FIG. 1, the constant voltage power supplies 31, 32, and 33 are used. However, in the present invention, a constant current power supply can be used instead of these constant voltage power supplies. .

The ceramic substrate used in the wafer prober device of the present invention is desirably at least one selected from the group consisting of ceramics such as nitride ceramics, carbide ceramics and oxide ceramics.

Examples of the nitride ceramic include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride, and the like.

Examples of the carbide ceramic include metal carbide ceramics, for example, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, tansten carbide, and the like.

Examples of the oxide ceramic include metal oxide ceramics, such as alumina, zirconia, cordierite, and mullite.

These ceramics may be used alone or in combination of two or more. Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high.

Aluminum nitride is the most preferable among the nitride ceramics. This is because the thermal conductivity is as high as 18 O W / m · K.

It is desirable that the above ceramic contains 100 to 200 ppm of carbon. This is because the electrode pattern in the ceramic is concealed and high radiant heat is obtained. The carbon may be one or both of crystalline or non-detectable amorphous by X-ray diffraction.

The thickness of the ceramic substrate of the chuck top in the present invention needs to be thicker than the chuck top conductor layer, and specifically, desirably 1 to 1 Omm.

In the present invention, a chuck top conductor layer is formed on the surface (adsorption surface) of the ceramic substrate because the back surface of the silicon wafer is used as an electrode. The thickness of the chuck top conductor layer is preferably 1 to 20 m. If the ratio is less than 1 / Π1, the resistance becomes too high to act as an electrode, while if it exceeds 20 μπι, the conductor tends to peel off due to the stress of the conductor.

As the chuck top conductor layer, for example, at least one metal selected from high melting point metals such as copper, titanium, chromium, nickel, noble metals (gold, silver, platinum, etc.), tungsten, and molybdenum can be used. it can.

The chuck top conductor layer may be a porous body made of metal or conductive ceramic. In the case of a porous body, it is not necessary to form a groove for suction and suction as described later, and it is possible to not only prevent damage to the wafer due to the presence of the groove, but also to uniformly suction and suction the entire surface. It is because it can realize.

As such a porous body, a metal sintered body can be used.

When a porous body is used, its thickness can be 1 to 200 μπι. For joining the porous body and the ceramic substrate, solder or brazing material is used. It is desirable that the chuck top conductor layer contains nickel. This is because the hardness is high and the tester pin is hardly deformed even when pressed. In addition, migration is difficult in the chuck top conductor layer containing nickel.

As a specific configuration of the chuck top conductor layer, for example, Sputtering, titanium, molybdenum, and nickel are sputtered in this order, and nickel is further deposited by electroless plating or electrolytic plating. And the like.

Alternatively, titanium, molybdenum, and nickel may be sputtered in this order, and copper and nickel may be further deposited by electroless plating. This is because the resistance of the chuck top electrode can be reduced by forming the copper layer.

Further, titanium and copper may be sputtered in this order, and nickel may be deposited thereon by electroless plating or electroless plating.

It is also possible to sputter chromium and copper in this order, and further deposit nickel thereon by electroless plating or electroless plating. Titanium and chromium can improve the adhesion with ceramic, and molybdenum can improve the adhesion with nickel.

Preferably, the thickness of titanium and chromium is 0.1 to 0.5 /: m, the thickness of molybdenum is 0.5 to 7.0 μπι, and the thickness of nickel is 0.4 to 2.5 μπι.

It is desirable that a noble metal layer (gold, silver, platinum, palladium) is formed on the surface of the chuck top conductor layer.

The noble metal layer can prevent contamination due to migration of the base metal. The thickness of the noble metal layer is desirably 0.01 to 15 / xm.

In the present invention, it is desirable to provide a temperature control means on the ceramic substrate. This is because the conduction test of the silicon wafer can be performed while heating or cooling.

The temperature control means may be a Peltier element in addition to the heating element 41 shown in FIG. When a heating element is provided, an outlet for a refrigerant such as air may be provided as a cooling means.

A plurality of heating elements may be provided. In this case, it is desirable that the pattern of each layer be formed so as to complement each other, and that the pattern be formed on any layer when viewed from the heating surface. For example, the structures are staggered with respect to each other.

Examples of the heating element include a sintered body of metal or conductive ceramic, metal foil, and gold. And the like. As the metal sintered body, at least one selected from tungsten and molybdenum is preferable. This is because these metals are relatively hard to oxidize and have a sufficient resistance value to generate heat.

Also, as the conductive ceramic, at least one selected from carbides of tungsten and molybdenum can be used.

Further, when a heating element is formed outside the ceramic substrate, it is desirable to use a noble metal (gold, silver, palladium, platinum) or nickel as the metal sintered body. Specifically, silver, silver-palladium, or the like can be used.

The metal particles used in the metal sintered body may be spherical, scaly, or a mixture of spherical and scaly.

A metal oxide may be added to the metal sintered body. The reason for using the metal oxide is to make the nitride ceramic or the carbide ceramic adhere to the metal particles. Although it is not clear why the metal oxide improves the adhesion between the nitride ceramic or the carbide ceramic and the metal particles, an oxide film is slightly formed on the surface of the metal particles and the surface of the nitride ceramic or the carbide ceramic. It is considered that these oxide films are sintered and integrated through the metal oxide, and the metal particles and the nitride ceramic or the carbide ceramic adhere to each other.

The metal oxide, for example, lead oxide, zinc oxide, silica, boron oxide (B ₂ 0 _3), alumina, said thoria, at least one selected from titania good preferable. This is because these oxides can improve the adhesion between the metal particles and the nitride ceramic or the carbide ceramic without increasing the resistance value of the heating element. The metal oxide is 0.1% by weight or more and 10% by weight with respect to the metal particles. /. It is desirable to be less than. This is because the resistance value does not become too large, and the adhesion between the metal particles and the nitride ceramic or the carbide ceramic can be improved.

Further, lead oxide, zinc oxide, silica, boron oxide (B ₂ 0 _3), alumina, Germany thoria, ratio of titania, in case of the 1 0 0 parts by weight of the total amount of metal oxides, oxidation lead 1 ~ 10 parts by weight, silica is 1 ~ 30 parts by weight, boron oxide is 5 ~ 50 parts by weight, zinc oxide is 20 ~ 70 parts by weight, alumina is 1 ~ 10 parts by weight, yttria is 1 ~ 5 parts by weight 0 parts by weight, preferably 1 to 50 main parts of titania. However, the sum of these is 100 times It is desirable that the amount be adjusted within a range not exceeding a part by mass. This is because these ranges are ranges in which the adhesion to the nitride ceramic can be particularly improved.

When the heating element is provided on the surface of the ceramic substrate, it is desirable that the surface of the heating element be covered with a metal layer 410 (see FIG. 12 (e)). The heating element is a sintered body of metal particles, and when exposed, is easily oxidized, and this oxidation changes the resistance value. Therefore, oxidation can be prevented by coating the surface with a metal layer.

The thickness of the metal layer is preferably 0.1 to 10 / m. This is because the heating element can be prevented from being oxidized without changing the resistance value of the heating element.

The metal used for the coating may be a non-oxidizing metal. Specifically, at least one selected from gold, silver, palladium, platinum, and nickel is preferable. Of these, nickel is more preferred. The heating element needs a terminal to connect to the power supply, and this terminal is attached to the heating element via solder, but nickel prevents heat diffusion of the solder. Kovar terminal pins can be used as connection terminals.

When the heating element is formed inside the heater plate, no coating is required since the heating element surface is not oxidized. When the heating element is formed inside the heater plate, a part of the surface of the heating element may be exposed.

As the metal foil used as the heating element, it is preferable to use a nickel foil or a stainless steel foil which is patterned by etching or the like to form a heating element.

The patterned metal foil may be bonded with a resin film or the like.

Examples of the metal wire include a tungsten wire and a molybdenum wire. When a Peltier element is used as the temperature control means, it is advantageous that both heat generation and cooling can be performed by changing the direction of current flow.

As shown in FIG. 7, the Peltier element is formed by connecting p-type and n-type thermoelectric elements 440 in series and bonding them to a ceramic plate 41 or the like.

Examples of the Peltier element include a silicon-germanium-based material, a bismuth-antimony-based material, and a lead / tellurium-based material.

The suction surface of the wafer prober used in the present invention has grooves 7 and air as shown in FIG. It is desirable that the suction hole 8 is formed. A plurality of suction holes 8 are provided to achieve uniform suction. This is because the silicon wafer W can be suctioned by placing the silicon wafer W thereon and sucking air from the suction holes 8.

As the wafer prober device in the present invention, for example, as shown in FIG. 1, a heating element 41 is provided on the bottom surface of a ceramic substrate 3, and a guard electrode 5 is provided between the heating element 41 and the chuck top conductor layer 2. Prober device that combines a wafer prober 101 with a layer and a ground electrode 6 layer, respectively, with a constant voltage power supply 31 etc., as shown in Fig. 5, flat inside the ceramic substrate 3 A wafer prober 201 having a configuration in which a guard electrode 5 and a ground electrode 6 are provided between the heating element 42 and the chuck top conductor layer 2 is provided with a constant voltage power supply or a constant current. A wafer prober device combined with a power supply (not shown). As shown in FIG. 6, a metal wire 43 serving as a heating element is buried inside a ceramic substrate 3, and the metal wire 43 and the chuck top conductor layer 2 are connected to each other. Guard electrode 5 and g A wafer prober device in which a wafer prober 301 provided with a ground electrode 6 is combined with a constant voltage power supply or a constant current power supply (not shown), as shown in FIG. 7, a Peltier element 4 4 (thermoelectric element (Composed of 440 and a ceramic substrate 441) are formed outside the ceramic substrate 3, and a guard electrode 5 and a ground electrode 6 are provided between the Peltier element 44 and the chuck top conductor layer 2. Wafer prober 401 is combined with a constant voltage power supply or a constant current power supply (not shown). Each wafer prober always has a groove 7 and a suction hole 8.

Further, as shown in FIG. 8, the wafer prober device of the present invention has a chuck top conductor layer 72 and a guard electrode 75 on both main surfaces of a ceramic substrate 73, respectively. There is also a wafer prober device in which a wafer prober 501 having a configuration in which a ground electrode 76 is disposed via a ceramic 扳 77 as an insulator is combined with a constant voltage power supply 81 or the like.

In the wafer prober used in the present invention, the heating elements 42, 43, 71 are formed inside the ceramic substrates 3, 73 as shown in FIGS. 1 to 8 (FIGS. 5, 6, 8), and the ceramics are formed. Since the guard electrode 5 and the ground electrode 6 (Figs. 1 to 7) are formed inside the circuit board 3, connection parts (through holes) 16 and 17 to connect these to external terminals are provided. 18, 87 are required.

The through holes 16, 17, 18, and 87 extend from near the ends of the guard electrode 5 and the ground electrode 6, are exposed at the bottom of the ceramic substrate through blind holes 180, and have external terminal pins 19, 18. 190 may be connected, or exposed through a blind hole (not shown) near the side surface, and connected by an external terminal.

Snorre-holes 16, 17, 18, and 87 are formed by filling a refractory metal such as tungsten paste or molybdenum paste, or a conductive ceramic such as tungsten carbide or molybdenum carbide.

Further, the diameter of the connection portions (through holes) 16, 17, 18, and 87 is desirably 0.1 to 1 Omm. This is because cracks and distortion can be prevented while preventing disconnection. External terminal pins are connected using these through holes 16, 17, 18, and 87 as connection pads (see Fig. 12 (g)).

Regarding the formation of the blind hole (not shown), after the green sheet is created, a through hole may be provided in the dary sheet by punching or the like. After the ceramic substrate is created, sand blasting, drilling, or the like is performed. A blind hole may be formed. Connection is made with solder or brazing material. Silver brazing, palladium brazing, aluminum brazing or gold brazing are used as brazing materials. Au—Ni alloy is desirable for gold brazing. This is because Au—Ni alloy has excellent adhesion to tungsten.

The ratio of Au_Ni is preferably [81.5 to 82.5 (weight./.)] And [18.5 to 17.5 (weight ° / ₀ )].

The thickness of the Au—Ni layer is preferably 0.1 to 50 m. This is because the range is sufficient to secure the connection. When used in a high vacuum of 10-6 to 10-5 Pa at a high temperature of 50 O to 1000 ° C, the Au—Cu alloy deteriorates, but the Au—Ni alloy has no such deterioration and is advantageous. is there. Further, the amount of impurity elements in the Au—Ni alloy is desirably less than 1 part by weight when the total amount is 100 parts by weight.

In the present invention, a thermocouple can be embedded in a ceramic substrate as needed. This is because the temperature of the heating element is measured with a thermocouple, and the temperature can be controlled by changing the voltage and current based on the data.

The size of the junction of the metal wires of the thermocouple is the same as the strand diameter of each metal wire, or It should be larger and 0.5 mm or less. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. As a result, the temperature controllability is improved and the temperature distribution on the suction surface of the wafer is reduced.

Examples of the thermocouple include K-type, R-type, B-type, S-type, E-type, J-type, and T-type thermocouples, as described in J Jt S—C—1602 (1980). .

Type K is a combination of NiZCr alloy and Ni alloy, Type R is a combination of Pt-13% Rh alloy and Pt, Type B is Pt-30% Rh alloy and Pt-65% Combination of Rh alloy, S type is Pt—combination of 10% Rh alloy and Pt, E type is ^^ 11 1: Combination of alloy and 011 ZN i alloy, J type is Fe and CuZN i alloy The T type is a combination of Cu and Cu / Ni alloy.

FIG. 9 is a cross-sectional view schematically showing a support 11 for installing the wafer prober used in the present invention having the above-described configuration.

The support base 11 has a refrigerant outlet 12 formed therein, and the refrigerant is blown from the refrigerant inlet 14. Further, air is sucked from the suction port 13 and the silicon wafer (not shown) placed on the wafer prober is sucked into the groove 7 through the suction hole 8.

FIG. 10A is a longitudinal sectional view schematically showing another example of the support base, and FIG. 10B is a sectional view taken along line BB in FIG. 10A. As shown in FIG. 10, the support base 21 is provided with a large number of support columns 15 so that the wafer prober is not warped by the pressing of the tester pins of the probe card.

The support can be made of aluminum alloy, stainless steel, or the like.

Further, the support bases 11 and 21 are provided with wires and terminals (not shown) for taking out the wires from the guard electrode 5, the ground electrode 6, and the heating element 41. Assemble a wafer prober device for conducting a continuity test on a silicon wafer by connecting it to a constant voltage power supply or the like (not shown) using the above method.

Then, for example, a voltage of 100 V is applied between the ground electrode 6 and the chuck top conductor layer 2 and between the ground electrode and the guard electrode 5, and the same is applied to the chuck top conductor layer 2 and the guard electrode 5. By applying a ground potential, Next, an example of a method of manufacturing a wafer prober (ceramic substrate) constituting the wafer prober apparatus of the present invention will be described with reference to the cross-sectional views shown in FIGS.

(1) First, a green sheet 30 is obtained by mixing a ceramic powder such as an oxide ceramic, a nitride ceramic, and a carbide ceramic with a binder and a solvent. As the above-mentioned ceramic powder, for example, aluminum nitride, silicon carbide and the like can be used, and if necessary, a sintering aid such as yttria may be added.

Further, as the binder, at least one selected from an acrylic binder, ethyl cellulose, butyl cellulose-based solve, and polybutyl alcohol is desirable. Further, the solvent is preferably at least one selected from _α -terbineol and glycol.

A paste obtained by mixing these is shaped into a sheet by a doctor blade method to produce a green sheet 30.

The green sheet 30 may be provided with a through hole for inserting a support pin of a silicon wafer and a concave portion for burying a thermocouple as needed. The through hole and the recess can be formed by punching or the like.

The thickness of the green sheet 30 is preferably about 0.1 to 5 mm.

Next, a guard electrode and a ground electrode are printed on the green sheet 30.

Printing is performed so as to obtain a desired aspect ratio in consideration of the shrinkage ratio of the green sheet 30, thereby obtaining a guard electrode print 50 and a ground electrode print 60.

The printed body is formed by printing a conductive paste containing conductive ceramic, metal particles, and the like.

Tungsten or molybdenum carbide is most suitable as the conductive ceramic particles contained in these conductive pastes. This is because it is not easily oxidized and the thermal conductivity is not easily reduced.

Further, as the metal particles, for example, tungsten, molybdenum, platinum, nickel, and the like can be used. The average particle size of the conductive ceramic particles and metal particles is preferably 0.1 to 5 / zm. These particles are too large or too small to print the paste. As such a paste, 85 to 97 parts by weight of metal particles or conductive ceramic particles, at least one kind of binder selected from acrylic, ethyl cellulose, butyl cellulose solvent and polybutyl alcohol 1.5 to 10 A paste prepared by mixing at least 1.5 to 10 parts by weight of at least one solvent selected from parts by weight, α-terpineol, glycol, ethyl alcohol and butanol is most suitable.

Further, holes formed by punching or the like are filled with a conductive paste to obtain through-hole prints 160 and 170.

Next, as shown in FIG. 11A, a green sheet 30 having prints 50, 60, 160, and 170 and a green sheet 30 having no print are laminated. The reason why the green sheet 30 having no printed body is laminated on the heat generating body forming side is to prevent the end face of the through hole from being exposed and being oxidized during firing for forming the heat generating body. If the heating element is to be baked while the end face of the through hole is exposed, it is necessary to sputter a metal that is difficult to oxidize, such as Eckel, and more preferably to coat it with Au-Ni gold brazing. You may.

(2) Next, as shown in FIG. 11 (b), the laminate is heated and pressed to sinter the green sheet and the conductive paste.

The heating temperature is preferably from 1,000 to 2,000 ° C., and the pressurization is preferably from 10 to 2 OMPa. The heating and pressurization are performed in an inert gas atmosphere. Argon, nitrogen, and the like can be used as the inert gas. In this step, through holes 16 and 17, guard electrode 5 and ground electrode 6 are formed.

(3) Next, as shown in FIG. 11 (c), grooves 7 are provided on the surface of the sintered body. The groove 7 is formed by a drill, a sandblast, or the like.

(4) Next, as shown in FIG. 11 (d), a conductive paste is printed on the bottom surface of the sintered body and fired to produce a heating element 41.

(5) Next, as shown in Fig. 12 (e), the adsorption surface (groove forming surface) is sputtered with titanium, molybdenum, nickel, etc., and then electroless nickel plated. The backing conductor layer 2 is provided. At this time, a protective layer 410 is also formed on the surface of the heating element 41 by electroless nickel plating or the like.

(6) Next, as shown in FIG. 12 (f), a suction hole 8 penetrating from the groove 7 to the bottom surface and a blind hole 180 for connecting an external terminal are provided.

It is desirable that at least a part of the inner wall of the blind hole 180 be made conductive, and that the made inner wall be connected to a guard electrode, a ground electrode, or the like.

(7) Finally, as shown in Fig. 12 (g), after printing the solder paste on the mounting part of the surface of the heating element 41, put the external terminal pin 191, heat it, and reflow it . The heating temperature is preferably from 200 to 500 ° C.

External terminals 19 and 190 are also provided in the blind hole 180 through a brazing filler metal. Furthermore, if necessary, a bottomed hole can be provided and a thermocouple can be embedded therein.

For solder, alloys such as silver-lead, lead-tin, and bismuth soot can be used. The thickness of the solder layer is desirably 0.1 to 50 μm. This is because the range is sufficient to secure the connection by soldering.

Thereafter, the wiring from the constant voltage power supply 31 is connected to the external terminal 19 connected to the guard electrode 5 via a socket or the like, and similarly, the chuck top conductor layer 2, the heating element 41, the ground electrode 6, The wafer prober device is assembled by connecting the wiring from the probe card 60 1 and the like to the constant voltage power supplies 31, 32, and 33.

In the above description, the wafer prober 101 (see FIG. 1) is taken as an example. However, when manufacturing the wafer prober 201 (see FIG. 5), the heating element may be printed on a green sheet. Further, when manufacturing the wafer prober 301 (see FIG. 6), a guard plate, a metal plate as a ground electrode, and a metal wire as a heating element may be embedded in ceramic powder and sintered.

Furthermore, when manufacturing the wafer prober 401 (see Fig. 7), the Peltier element must be joined via a sprayed metal layer.

When manufacturing the wafer prober 501 (see Fig. 8), a heating element is printed on a dur- ing sheet to form a ceramic substrate, and a guard electrode is formed on the bottom surface. The ceramic plate on which the electrodes are provided may be joined with an inorganic adhesive. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the present invention will be described in more detail.

(Example 1) Production of wafer prober 101 (see Fig. 1) and assembly of wafer prober device

(1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.100 weight parts, yttria (average particle size: 0.4 μπι), 4 weight parts, acrylic binder: 11.5 weight parts, dispersant: 0.5 weight A green sheet having a thickness of 0.47 mm was formed by a doctor blade method using a composition obtained by mixing 53 parts by weight of alcohol consisting of 1 part of ethanol and 1 part of ethanol with ethanol.

(2) 80 this green sheet. After drying for 5 hours at C, through holes for through holes for connecting the heat generator and external terminal pins were formed by punching.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 / m, 3.0 parts by weight of an atalyl-based binder, 3.5 parts by weight of an α-terbineol solvent, and 0.3 parts by weight of a dispersant are mixed to conduct electricity. Sex paste Α.

Also, 100 parts by weight of tungsten particles having an average particle diameter of 3 μπι, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of a terbineol solvent, and 0.2 parts by weight of a dispersant are mixed to form a conductive paste. did.

Next, a grid-shaped guard electrode printed body 50 and a ground electrode printed body 60 were printed and printed on the green sheet by screen printing using the conductive paste. In addition, conductive paste B was filled in through holes for through holes for connection with terminal pins.

Furthermore, 50 printed green sheets and unprinted green sheets are stacked on one another. C, a laminated body was produced by unifying with a pressure of 8 MPa (see Fig. 11 ( _a )).

(4) Next, the laminate was degreased in nitrogen gas at 600 ° C for 5 hours, and hot-pressed at 1890 ° C and a pressure of 15 MPa for 3 hours to obtain an aluminum nitride plate having a thickness of 4 mm. Was. The obtained plate was cut into a circular shape having a diameter of 23 Oram to obtain a ceramic plate (see FIG. 11 (b)). The size of through holes 16 and 17 is The diameter was 3. Omm and the depth was 3. Omm.

The thickness of the guard electrode 5 and the ground electrode 6 was 10 μπι, the position of the guard electrode 5 was 0.2 mm from the suction surface, and the position of the duland electrode 6 was 3.0 nam from the suction surface.

(5) After polishing the plate-like body obtained in (4) above with a diamond grindstone, a mask is placed, and a blast treatment using SiC or the like is performed to form a concave portion for a thermocouple on a suction surface (not shown). Also, a groove 7 (0.5 mm wide, 0.5 mm deep) for silicon wafer suction was provided (see Fig. 11 (c)).

(6) Further, the heating element 41 was printed on the surface facing the suction surface. For printing, a conductive paste was used. The conductive paste used was Solvent PS 603D manufactured by Tokuka Chemical Laboratory, which is used to form through holes in printed wiring boards. This conductive paste is a silver-zinc lead paste, and 100 parts by weight of silver is a metal oxide composed of zinc oxide, zinc oxide, silica, boron oxide, and alumina (each weight ratio is 5Z55Z1 OZ25-5). 7.5 parts by weight.

The silver was scaly with an average particle size of 4.5 μm.

(7) The heater plate on which the conductive paste was printed was heated and baked at 780 ° C. to sinter silver and lead in the conductive paste and to bake it on the ceramic substrate 3. Further, the heater plate was immersed in an electroless nickel plating bath composed of an aqueous solution containing 3 Og / l of nickel sulfate, 30 gZl of boric acid, 30 gZl of ammonium chloride, and 60 gZl of Rossier salt, and the silver sintered body 41 A nickel layer 410 having a thickness of 1 μΐη and a boron content of 1% by weight or less was deposited on the surface. Thereafter, the heater plate was annealed at 120 for 3 hours.

The heating element made of a sintered body of silver had a thickness of 5 / im, a width of 2.4 mm, and a sheet resistivity of 7.7ΙΒΩ square (Fig. 11 (d)).

(8) A titanium layer, a molybdenum layer, and a nickel layer were sequentially formed on the surface where the grooves 7 were formed by sputtering. As a device for sputtering, SV-4540 manufactured by Japan Vacuum Engineering Co., Ltd. was used. The sputtering conditions were as follows: atmospheric pressure: 0.6 Pa, temperature: 100 ° C, power: 200 W. Sputtering time was adjusted for each metal within the range of 30 seconds to 1 minute. The thickness of the obtained film was 0.3 m for the titanium layer, 2 m for the molybdenum layer, and 1 μm for the nickel layer from the image of the X-ray fluorescence spectrometer.

(9) sulphate nickel 30 gZ l, boric acid 30 _§ 1, electroless nickel plating bath comprising an aqueous solution containing a] chloride Anmoniumu 30 g / 1 and the mouth Ssheru salt 60 gZ, and nickel sulfate 250 to 350 gZ l, chloride The ceramic plate obtained in (8) above is immersed in an electrolytic nickel plating bath containing nickel 40-70 gZ1, boric acid 30-50 g / 1, and adjusted to pH 2.4-4.5 with sulfuric acid. Then, a nickel layer having a thickness of 7 μιη and a boron content of 1% by weight or less was deposited on the surface of the metal layer formed by sputtering, and annealed at 120 ° C. for 3 hours.

The heating element surface does not conduct current and is not covered with electrolytic nickel plating.

In addition, an electroless plating solution containing gold cyanide 2 H, ammonium chloride 75 g /], sodium taenoate 50 g_ / 1, and sodium hypophosphite 10 g / 1 on the surface under the conditions of 93 93 For 1 minute to form a 1 im-thick gold-plated layer on the nickel plating layer 15 (see FIG. 12 (e)).

(10) An air suction hole 8 that escapes from the groove 7 to the bottom surface was formed by drilling, and a blind hole 180 was provided to expose the through holes 6 and 17 (see Fig. 12 (f)). N i-Au alloy to the blind bore 180 (Au 8 1. 5 wt. / _0, N i 18. 4 wt%, impurities 0.1 wt%) using gold braze consisting of heating reflow one 970 ° C Then, Kovar external terminal pins i9 and 190 were connected (see Fig. 12 (g)). Also, Kovar external terminal pins 191 were formed on the heating element via solder (tin 9Z lead 1).

(11) Next, a plurality of thermocouples for temperature control were buried in the recesses to obtain a wafer probe heater 101.

(12) The wafer prober 101 was placed on a stainless steel support having the cross-sectional shape shown in FIG. 9 via a heat insulating material 10 made of ceramic fiber (trade name of ibiden). The support table 11 has a cooling gas injection nozzle 12 for adjusting the temperature of the wafer prober 101 and sucking air from the suction port 13 to suck the silicon wafer.

Further, the support 11 has a guard electrode 5, a ground electrode 6, and a heating element 41. Since wiring and terminals (not shown) for taking out these wirings are provided, connection to a constant voltage power supply and the like (not shown) is performed using these wirings and the like, and a silicon wafer is provided. A wafer prober device capable of conducting a continuity test was assembled.

A voltage of 100 V is applied between the ground electrode and the chuck top conductor layer 2 and between the ground electrode and the guard electrode 5, and the same ground potential is applied to the chuck top conductor layer 2 and the guard electrode 5. Gave.

(Example 2) Manufacture of wafer prober 201 (see Fig. 5) and assembly of wafer prober device

(1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μη) 100 weight parts, yttria (average particle diameter 0.4;! M) 4 weight parts, acrylyl binder 11.5 weight parts A composition obtained by mixing 0.5 part by weight of a dispersant and 53 parts by weight of alcohol composed of 1-butanol and ethanol was molded by a doctor blade method to obtain a green sheet having a thickness of 0.47 mm. .

(2) After drying this green sheet at 80 for 5 hours, a through-hole for a through-hole for connecting a heat generator and an external terminal pin was provided by punching.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 Aim, 3.0 parts by weight of an acryl-based binder, 3.5 parts by weight of a terbineol solvent, and 0.3 parts by weight of a dispersant are mixed to conduct electricity. Sex paste Α.

Also, 100 parts by weight of tungsten particles having an average particle diameter of 3 jum, 1.9 parts by weight of an acrylic binder, 3.7 parts of an α-terbineol solvent, and 0.2 parts by weight of a dispersant are mixed to form a conductive paste. Β

Next, a grid-shaped printed body for a guard electrode and a printed body for a ground electrode were printed on a green sheet by screen printing using this conductive paste. Further, the heating element was printed as a concentric pattern as shown in FIG.

In addition, conductive paste B was filled in the through-holes for through-holes for connection with terminal pins.

Further, 50 sheets of printed green sheets and unprinted green sheets were laminated and integrated at 130 ° C. and a pressure of 8 MPa to produce a laminate.

(4) Next, this laminate was degreased in nitrogen gas at 600 ° C. for 5 hours, Hot pressing was performed at a pressure of 15 MPa for 3 hours to obtain a 3 mm-thick aluminum nitride plate. This was cut into a circular shape having a diameter of 23 O mm to obtain a ceramic plate. The size of the through hole was 2. Omm in diameter and 3. Omm in depth.

In addition, the thickness of the guard electrode 5 and the durand electrode 6 is 6 μm, the formation position of the guard electrode 5 is 0.7 mm from the suction surface, and the formation position of the ground electrode 6 is 1.4 -mm from the suction surface. The formation position of the heating element was 2.8 mm from the adsorption surface.

(5) After polishing the plate-like body obtained in (4) above with a diamond grindstone, a mask is placed, and the surface is subjected to blasting treatment with SiC or the like to form concave portions (not shown) for thermocouples and Grooves 7 (width 0.5 mm, depth 0.5 mm) for silicon wafer suction were provided.

(6) Titanium, molybdenum, and nickel layers were formed on the surface where the grooves 7 were formed by sputtering. As a device for sputtering, SV-4540 manufactured by Japan Vacuum Engineering Co., Ltd. was used. Sputtering conditions were as follows: atmospheric pressure: 0.6 Pa, temperature: 100 V, power: 200 W. Sputtering time was adjusted from 30 seconds to 1 minute for each metal.

The obtained film showed 0.5 // m for titanium, 4 / m for molybdenum, and 1.5 / x iri for nickel from the image of the fluorescent X-ray analyzer.

(7) An electroless nickel plating bath consisting of an aqueous solution containing nickel sulfate 3 O gZl, boric acid 30 gZl, ammonium chloride 30 g Z1, mouthshell salt 60 g / 1

The ceramic plate 3 obtained in (6) is immersed to deposit a nickel layer having a thickness of 7 μm and a boron content of 1% by weight or less on the surface of the metal layer formed by sputtering. For 3 hours.

In addition, electroless gold plating solution consisting of 2 g / 1 potassium gold cyanide, 75 gZ1 salt ammonium salt, 50 g / I sodium taenoate and 10 g / 1 sodium hypophosphite on the surface. It was immersed at 93 ° C for 1 minute to form a 1 µm thick gold-plated layer on the nickel plating layer.

(8) An air suction hole 8 was formed from the groove 7 to the bottom surface by drilling, and a blind hole 180 for exposing the through holes 16 and 17 was provided. This blind holes 1 8 0 N i - A u alloys (. A u 8 1. 5 wt / _0, N il 8. 4 wt%, impurities 0.1 wt%) using gold braze consisting of 9 7 0 Heat reflow at ° C to make Kovar external Terminal pins 19 and 190 were connected. External terminals 19 and 190 can be made of W.

(9) A plurality of thermocouples for temperature control were buried in the recesses to obtain a wafer prober heater 201.

(10) The wafer prober 201 was placed on a stainless steel support having a cross-sectional shape as shown in FIG. The support base 11 is formed with a support column 15 for preventing the wafer prober from warping, and is configured to be able to suck air from the suction port 13 to suck a silicon wafer.

-Further, since the support 21 is provided with wires, terminals, etc. (not shown) for taking out the wires from the guard electrode 5, the ground electrode 6, and the heating element 41, these are provided. A wafer prober device capable of conducting a continuity test of a silicon wafer by assembling with a constant voltage power supply or the like (not shown) using the wiring or the like was assembled.

Then, a voltage of 100 V is applied between the ground electrode and the chuck top conductor layer 2 and between the ground electrode and the guard electrode 5, and the same ground potential is applied to the chuck top conductor layer 2 and the guard electrode 5. Gave.

(Example 3) Production of wafer prober 301 (see Fig. 6) and assembly of wafer prober device

(1) A grid-like electrode was formed by punching a tungsten foil having a thickness of 10 μιη.

Two pieces of grid-like electrodes (they serve as guard electrode 5 and ground electrode 6, respectively) and tungsten wire were aluminum nitride powder (manufactured by Tokuyama, average particle size 1.1 μχα) 100 parts by weight, yttria ( Average particle size 0.4 μη) Along with 4 parts by weight, put in a mold and hot-press in nitrogen gas at 189 ° C and a pressure of 15 MPa for 3 hours to obtain a 3 mm thick aluminum nitride A plate was obtained. This was cut into a circular shape having a diameter of 23 Omm to obtain a plate-like body.

(2) The steps (5) to (10) of Example 2 were performed on this plate-like body to obtain a wafer prober 301, and a wafer prober 301 was drawn in the same manner as in Example 1. The wafer was mounted on the support 11 shown in FIG. 9 and a wafer blower device was assembled in the same manner as in Example 1. Then, a voltage of 100 V is applied between the ground electrode and the chuck top conductor layer 2 and between the ground electrode and the guard electrode 5, and the same ground is applied to the chuck top conductor layer 2 and the guard electrode 5. An electric potential was applied.

(Example 4) Manufacture of wafer blower 401 (see Fig. 7) and assembly of wafer prober device

After performing (1) to (5) and (8) to (10) in Example 1, nickel was further sprayed on the surface facing the adsorption surface, and thereafter, a lead-tellurium-based Peltier device The wafer prober 401 was obtained, and the wafer prober 401 was placed on the support base 11 shown in FIG. 9 in the same manner as in Example 1, and the wafer prober 401 was mounted in the same manner as in Example 1. The device was assembled.

A voltage of 100 V is applied between the ground electrode and the chuck top conductor layer 2 and between the ground electrode and the guard electrode 5, and the same ground is applied to the chuck top conductor layer 2 and the guard electrode 5. An electric potential was applied.

(Example 5) Production of wafer prober using silicon carbide as a ceramic substrate and assembly of wafer prober device

A wafer prober was manufactured in the same manner as in Example 3 except for the matters or conditions described below.

That is, 100 parts by weight of a silicon carbide powder having an average particle diameter of 1.0 μπα was used, and two grid-like electrodes (each serving as a guard electrode 5 and a ground electrode 6) were used. and, the surface of tetraethoxysilane 1 0 wt ° / _0, hydrochloric 0. 5 wt% and water 8 9. the sol solution using coated tungsten wire consisting of 5 by weight%, the temperature of 1 9 0 0 ° C Baked. It should be noted that the sol solution becomes Sio _{2 by} firing to form an insulating layer.

Next, the wafer prober 401 obtained in the fifth embodiment was placed on the support 11 shown in FIG. 9 in the same manner as in the first embodiment, and the wafer prober apparatus was operated in the same manner as in the first embodiment. Was assembled.

Then, a voltage of 100 V is applied between the ground electrode and the chuck top conductor layer 2 and between the ground electrode and the guard electrode 5, and the same ground is applied to the chuck top conductor layer 2 and the guard electrode 5. An electric potential was applied.

(Embodiment 6) Production and wafer production of a wafer prober using alumina as a ceramic substrate Assembling the haploaver device

Except for the steps or conditions described below, in the same manner as in Example 1, 100 parts by weight of _d- alumina powder (manufactured by Tokuyama, average particle size: 1.5 Aim) for producing a wafer prober, acrylic binder 1 1. A mixture of 5 parts by weight, 0.5 part by weight of a dispersant, and 53 parts by weight of alcohol composed of 1-butanol and ethanol was molded using a doctor blade method to form a green sheet having a thickness of 0.5 mm. Obtained. The firing temperature was set at 1000.

Next, the wafer prober obtained in Example 6 was placed on the support 11 shown in FIG. 9 as in Example 1, and a wafer prober device was assembled in the same manner as in Example 1. Was.

(Example 7) Production of wafer prober including porous chuck top conductor layer and assembly of wafer prober device

(1) Tungsten powder having an average particle diameter of 3 μιη is placed in a disk-shaped molding jig and hot-pressed in nitrogen gas at a temperature of 1890¾ at a pressure of 15ΜΡa for 3 hours to obtain a diameter of 20 Omm and a thickness of 20 Omm. A 110 m tungsten porous check top conductor layer was obtained.

(2) Next, the same steps as (1) to (4) and (5) to (7) in Example 1 were performed to obtain a ceramic substrate having a guard electrode, a ground electrode, and a heating element. Was.

(3) The porous chuck top conductor layer obtained in (1) above was placed on a ceramic substrate via a powder of gold solder (same as (10) in Example 1) and reflowed at 970 ° C. .

(4) The same steps as (10) to (12) of Example 1 were performed to obtain a wafer prober.

In the wafer prober obtained in this example, the semiconductor wafer is uniformly adsorbed on the chuck top conductor layer. Next, the wafer prober obtained in Example 7 was placed on the support 11 shown in FIG. 9 in the same manner as in Example 1, and a wafer prober device was assembled in the same manner as in Example 1. Was.

(Comparative Example 1)

After manufacturing a wafer prober in the same manner as in Example 1, a wafer prober apparatus was assembled in the same manner as in Example 1.

Then, a voltage of 100 V is applied between the ground electrode and the chuck top conductor layer 2, no circuit is formed between the duland electrode and the guard electrode 5, and the chuck top conductor layer 2 is formed. And the potential of the guard electrode 5 were different.

Evaluation method

A non-defective silicon wafer W is placed on the wafer prober manufactured in the above example and the comparative example placed on the support table, as shown in FIG. Then, the probe card 601 was pressed to perform a continuity test to check for malfunction. The results are shown in Table 1 below.

Table 1 Whether there is a malfunction Example 1 te Example 2 te Example 3

Example 4 to Example 5 to Example 6

Comparative Example 1 Yes As is clear from Table 1 above, the wafer prober device (Examples 1 to 7) having a guard electrode and applying the same ground potential to the chuck top conductor layer 2 and the guard electrode 5 makes a correct determination. On the other hand, in the wafer prober device (Comparative Example 1) in which a guard electrode was provided but the same ground potential was not applied to the chuck conductor layer 2 and the guard electrode 5, an erroneous determination was made due to noise. I will. Industrial applicability

As described above, in the wafer prober device of the present invention, since a voltage is applied so that the chuck top conductor layer and the guard electrode have substantially the same potential, the stray capacitor interposed in the measurement circuit is removed. It is possible to provide a wafer prober device that can cancel, does not generate noise due to the storage capacitor, and does not malfunction.

Further, the ceramic substrate used in the wafer prober of the present invention is the ceramic substrate used in the above-described wafer prober device. By using this ceramic substrate, noise due to the stray capacitor does not occur, and malfunctions occur. It is possible to provide a wafer prober device that does not generate any.

Claims

The scope of the claims

1. A wafer prober having a chuck top conductor layer formed on a surface of a ceramic substrate and a guard electrode provided on the ceramic substrate, and a wafer prober device including a power supply, A wafer prober, wherein a voltage is applied so that the chuck top conductor layer and the guard electrode have substantially the same potential.

2. A ceramic substrate on which a chuck top conductor layer is formed and a guard electrode is disposed, and a wafer prober device including a power supply, wherein the power supply includes: A voltage is applied so that the layer and the guard electrode have substantially the same potential.

3. A chuck probe conductor layer and a guard electrode are respectively disposed on both main surfaces thereof, and a duland electrode is disposed on the guard electrode via an insulator, which is used for a wafer prober device. Ceramic substrate.