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WO2002035699A1 - Voltage-controlled oscillator, especially for mobile radiotelephone devices - Google Patents

Voltage-controlled oscillator, especially for mobile radiotelephone devices Download PDF

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Publication number
WO2002035699A1
WO2002035699A1 PCT/DE2001/003611 DE0103611W WO0235699A1 WO 2002035699 A1 WO2002035699 A1 WO 2002035699A1 DE 0103611 W DE0103611 W DE 0103611W WO 0235699 A1 WO0235699 A1 WO 0235699A1
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
controlled oscillator
mems
capacitor
inductor
Prior art date
Application number
PCT/DE2001/003611
Other languages
German (de)
French (fr)
Inventor
Bernd Bienek
Dietmar Gapski
Xihe Tuo
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2002035699A1 publication Critical patent/WO2002035699A1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors

Definitions

  • the invention relates to a voltage-controlled oscillator (VCO), in particular for mobile radio devices, with an oscillating circuit formed by electronic components, which can be tuned by an adjusting element.
  • VCO voltage-controlled oscillator
  • Voltage-controlled oscillators primarily serve to generate vibrations of certain curve shapes, for example sine, rectangle, triangle, sawtooth and pulse.
  • voltage-controlled oscillators are used which have a tunable resonant circuit consisting of inductors (L) and capacitors (C) which are generally connected in parallel.
  • inductors L
  • C capacitors
  • varactor diodes are usually used, which are connected as a pair in a cathode-cathode arrangement in order to at least partially eliminate non-linearities of the capacitance-voltage curve. As a result, however, there is a lower harmonic content.
  • a broadband frequency range and a low phase look is especially in connection with the increasingly widespread mobile devices, such as mobile phones according to the currently coexisting mobile radio standards GSM (Global System for Mobile Communication), DCS1800 (Digital Cellular System), UMTS (Universal Mobile Telecommunication System), D-AMPS (Digital Advanced Mobile Phone System), IS-95, or IS-136 of particular importance.
  • GSM Global System for Mobile Communication
  • DCS1800 Digital Cellular System
  • UMTS Universal Mobile Telecommunication System
  • D-AMPS Digital Advanced Mobile Phone System
  • IS-95 IS-95
  • IS-136 Digital Advanced Mobile Phone System
  • This working mostly in frequency ranges of 900 MHz, 1800 MHz and 1900 MHz cellular systems require well as digi ⁇ tale cordless phones based on the DECT (Digital En- hanced Cordless System) with frequencies at 1700 MHz a wide tuning range.
  • DECT Digital En- hanced Cordless System
  • the invention has for its object to provide a voltage-controlled oscillator with which a broadband frequency range and a low phase noise can be realized in a simple manner.
  • the adjusting element comprises a capacitor-based micro-electro-mechanical system.
  • MEMS micro-electromechanical system
  • the electronic components are mostly made by semiconductor technologies, such as CMOS, bipolar or BICMOS process, whereas the micro-mechanical components are produced by micromachining processes, such as, for example, the area-based etching of the silicon carrier to remove or add structural and functional layers. Accordingly, MEMS are systems that can be used in a wide variety of areas.
  • MEMS-C micro-electromechanical system which is made to work as a capacitor in the sense of the present invention, hereinafter referred to as MEMS-C, is an electrically controlled component which changes the capacitance between its connections by a mechanical change in the geometry.
  • MEMS-C itself is known, so that reference is made to the state of the art with regard to the structure and mode of operation of the MEMS-C.
  • a MEMS-C according to the invention as a component of the setting element of a voltage-controlled oscillator, which enables a broadband frequency range and a low phase noise, makes it possible to considerably simplify the construction of an oscillator and thus to ensure cost-effective production.
  • the RF signal and the DC connection are separated from one another in the MEMS-C, non-elements of the capacitance-voltage curve have no harmful effects on the effectiveness of the phase noise.
  • the MEMS-C has a better quality factor than conventional varactor diodes.
  • the quality factor of the MEMS-C at 1.5 GHz is more than 100 compared to about 40 of a varactor diode, with the result that, in contrast to the use of varactor diodes, no complex designs are required with regard to the required phase noise ,
  • the MEMS-C has a wide tuning range, including game from 0.5 pF to 10.0 pF or more, resulting in a simple manner, a broadband voltage controlled Os ⁇ zillator let realize, without the Q factor m certain ranges of values to be reduced.
  • adjusting element is additionally provided with a varactor diode in order to take into account the most varied requirements which are placed on voltage-controlled oscillators in practice.
  • the requirements that are placed on voltage-controlled oscillators, which, as in the present case, can be broadband tuned, stem primarily from the fact that such oscillators have a high tuning steepness.
  • This tuning element can be, for example, another MEMS-C or - as described above - a capacitance diode. The latter has the additional advantage that capacitance diodes have a large good for small tuning steepnesses.
  • the adjusting element can also be expedient to provide the adjusting element with a micro-electromechanical system switch, MEMS switch, which takes advantage of the advantages of MEMS technology, for example in order to be able to specifically change the inductive part of the resonant circuit.
  • MEMS switch micro-electromechanical system switch
  • the voltage-controlled oscillator as a high-performance oscillator.
  • an oscillator with low noise can also be implemented in the RF or microwave frequency range.
  • the reason for this is that the noise of the oscillator away from the carrier mainly through the Quality of the resonator is determined.
  • a very high power level is then stored in the resonant circuit, which ensures a high distance from the background noise. Because of the high power, it is necessary that the individual components of the resonant circuit are suitable for carrying out high-voltage vibrations.
  • Fig. La is a schematic diagram of a known voltage controlled oscillator with a pair of varactor diodes, which are located in a cathode-cathode arrangement;
  • 1b shows a schematic circuit diagram of a known voltage-controlled oscillator with a capacitor and resonator controlled by switches
  • 1c shows a schematic circuit diagram of a known voltage-controlled oscillator with varactor diodes connected in parallel;
  • FIG. 2 shows a schematic circuit diagram of a voltage-controlled oscillator according to the invention with a MEMS-C
  • Fig. 3 is a schematic diagram of the oscillator of FIG. 2 with an additional varactor diode and
  • FIG. 4 shows a schematic circuit diagram of the oscillator according to FIG. 3 with an additional MEMS switch.
  • La to 1c embodiments of known voltage-controlled oscillators are shown.
  • the oscillator according to FIG. 1 a has an oscillating circuit which consists of a capacitor 1 and a resonator designed as an inductor 2, which are connected in parallel and connected to ground.
  • an adjusting member is provided which extends from a voltage source to a DC clamping ⁇ 3 of, for example, - 8.0 V composed connected pair of varactor diodes 4 to 0.5 V or more.
  • the varactor diodes 4 are located in a cathode-cathode arrangement which is connected in parallel with the capacitor 1 and the inductor 2 and is likewise connected to ground, so that a negative tuning voltage is present in the resonator branch at the voltage specified above.
  • the varactor diodes 4 can alternatively also be connected to the DC voltage source 3 in a manner known per se via further electronic components, such as adjustable resistors or further capacitors, in order to achieve a desired tuning behavior.
  • the voltage-controlled oscillator also referred to below as the VCO
  • the VCO also has a remaining part 5, which is only indicated in the drawings and contains other electronic components required for the functioning of the VCO in a manner known per se.
  • the voltage-controlled oscillator according to FIG. 1b differs from that according to FIG. La mainly in that an additional capacitor 1 is provided and both the capacitors 1 and the inductor 2 can be controlled via switches 6a and 6b.
  • the inductor 2 has a tap which is switched on by the switch 6b is connectable to ground.
  • the voltage-controlled oscillator according to FIG. 1c has three pairs of varactor diodes 4, which are each in a cathode-cathode arrangement and are connected in parallel with the capacitor 1 and the inductor 2.
  • FIGS. 2 to 4 show various embodiments of a voltage-controlled oscillator, in which the setting element has a capacitor-supported micro-electromechanical system 7, MEMS-C, which is known per se.
  • MEMS-C micro-electromechanical system 7
  • the MEMS-C 7 also takes over the function of the capacitor 1 of the VCO according to FIGS. 1 a to 1 c.
  • the MEMS-C 7 is connected on the one hand to the DC voltage source 3 and on the other hand to ground and is connected in parallel to the resonator designed as an inductor 2.
  • Resonators designed as power resonators or MEMS resonators can also be used as resonators.
  • the inductor 2, which is also connected to ground, has a tap which can also be connected to ground by the switch 6b.
  • the inductor 2 is provided with two taps, each of which can be connected to ground via switch 6b.
  • a pair of varactor diodes 4 which are connected in a cathode-cathode arrangement, are connected in parallel between the MEMS-C 7 and the inductor 2 and are connected to a second DC voltage source 3.
  • a line section between the MEMS-C 7 and the inductor 2 can be connected to ground via a first capacitor 1 by means of a micro-electromechanical system switch 8, MEMS switch.
  • the MEMS switch makes it possible lent to specifically change the inductive part of the resonant circuit.
  • the MEMS-C 7 and inductor 2 located in series are connected in parallel to a second capacitor 1 and a varactor diode 4 and connected to the remaining part 5 of the VCO via a third capacitor 1.
  • the MEMS-C 7 is connected to a first DC voltage source 3, whereas both the varactor diode 4 and the second capacitor 1 and the inductor 2 are connected to a second DC voltage source 3.
  • the MEMS-C 7 as an adjustment element, which results in an uncomplicated design of the VCO. Since the MEMS-C 7 also has a high Q factor and a wide tuning range, a targeted design of the broadband and low phase noise ensuring VCO can be realized. As described, the MEMS-C can also be combined with a conventional varactor diode and a switch, such as the MEMS switch described above, depending on the application. Last but not least, it is then possible to achieve an oscillator topology which has the function of known oscillators, such as Colpitts oscillators, but is considerably simplified in terms of its design.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

The invention relates to a voltage-controlled oscillator, especially for mobile radiotelephone devices, comprising an oscillating circuit, which is formed by electronic components and which can be tuned by a tuning element. In order to easily realize a broadband frequency range and a low phase noise in a voltage-controlled oscillator of the aforementioned type, the tuning element is provided with a capacitor back-up microelectromechanical system (7).

Description

Beschreibungdescription
Spannungsgesteuerter Oszillator, insbesondere für MobilfunkgerateVoltage controlled oscillator, especially for mobile radio devices
Die Erfindung betrifft einen spannungsgesteuerten Oszillator (VCO) , insbesondere für Mobilfunkgerate, mit einem durch e- lektronische Bauteile gebildeten Schwingkreis, der durch ein Einstellelement abstimmbar ist.The invention relates to a voltage-controlled oscillator (VCO), in particular for mobile radio devices, with an oscillating circuit formed by electronic components, which can be tuned by an adjusting element.
Spannungsgesteuerte Oszillatoren (voltage controlled oscilla- tors) dienen in erster Linie dazu, Schwingungen bestimmter Kurvenformen, beispielsweise Sinus, Rechteck, Dreieck, Sägezahn und Puls, zu erzeugen. Insbesondere für den Einsatz im Hochfrequenzbereich (HF) , wie etwa für Mobilfunkanwendungen, werden spannungsgesteuerte Oszillatoren verwendet, die einen abstimmbaren Schwingkreis aus in der Regel parallelgeschalteten Induktivitäten (L) und Kondensatoren (C) aufweisen. Zur Abstimmung eines solchen LC-Schwingkreises werden üblicherweise Varaktordioden benutzt, die als Paar in einer Kathode- Kathode-Anordnung geschaltet sind, um Nichtlinearitäten der Kapazitäts-Spannungs-Kurve zumindest teilweise zu eliminieren. Als Folge hiervon ergibt sich jedoch ein geringerer Oberwellengehalt .Voltage-controlled oscillators primarily serve to generate vibrations of certain curve shapes, for example sine, rectangle, triangle, sawtooth and pulse. In particular for use in the high frequency range (HF), such as for mobile radio applications, voltage-controlled oscillators are used which have a tunable resonant circuit consisting of inductors (L) and capacitors (C) which are generally connected in parallel. To tune such an LC resonant circuit, varactor diodes are usually used, which are connected as a pair in a cathode-cathode arrangement in order to at least partially eliminate non-linearities of the capacitance-voltage curve. As a result, however, there is a lower harmonic content.
Um den Quality-Faktor (Q) , der sich im allgemeinen aus der Division der Mittenfrequenz durch die Frequenzbandbreite er- rechnet und demnach die Güte des Schwingkreises angibt, nicht zu vermindern, wird gewöhnlich eine geringe Spannung und hohe Kapazität am Ausgang der Varaktordioden vermieden. Zudem ist es bekannt, parallel geschaltete Varaktordioden vorzusehen, um sowohl ein breitbandiges Frequenzspektrum als auch einen hohen Q-Faktor zu erreichen. Weitere übliche Praktiken inIn order not to reduce the quality factor (Q), which is generally calculated by dividing the center frequency by the frequency bandwidth and therefore indicating the quality of the resonant circuit, a low voltage and high capacitance at the output of the varactor diodes are usually avoided. It is also known to provide varactor diodes connected in parallel in order to achieve both a broadband frequency spectrum and a high Q factor. Other common practices in
Hinsicht auf einen breitbandigen Frequenzbereich und ein ge- ringes Phasenrauschen sind, die Kondensatoren und/oder die Induktivitäten beziehungsweise Resonatoren über Schalter anzusteuern.With regard to a broadband frequency range and a Ring phase noise are to control the capacitors and / or the inductors or resonators via switches.
Ein breitbandiger Frequenzbereich und ein geringes Phasenrau- sehen ist vor allem im Zusammenhang mit den zunehmend stärker verbreiteten Mobilfunkgeräten, wie zum Beispiel Mobiltelefone nach den gegenwärtig nebeneinander existierenden Mobilfunkstandards GSM (Global System for Mobile Communication) , DCS1800 (Digital Cellular System), UMTS (Universal Mobile Te- lecommunication System) , D-AMPS (Digital Advanced Mobile Pho- ne System), IS-95, oder IS-136 von besonderer Bedeutung. Diese meist in Frequenzbereichen von 900 MHz, 1800 MHz und 1900 MHz arbeitenden zellularen Systeme erfordern ebenso wie digi¬ tale schnurlose Telefone nach dem DECT-Standard (Digital En- hanced Cordless System) mit Frequenzen bei 1700 MHz einen breiten Abstimmbereich.A broadband frequency range and a low phase look is especially in connection with the increasingly widespread mobile devices, such as mobile phones according to the currently coexisting mobile radio standards GSM (Global System for Mobile Communication), DCS1800 (Digital Cellular System), UMTS (Universal Mobile Telecommunication System), D-AMPS (Digital Advanced Mobile Phone System), IS-95, or IS-136 of particular importance. This working mostly in frequency ranges of 900 MHz, 1800 MHz and 1900 MHz cellular systems require well as digi ¬ tale cordless phones based on the DECT (Digital En- hanced Cordless System) with frequencies at 1700 MHz a wide tuning range.
Der Erfindung liegt die Aufgabe zugrunde, einen spannungsgesteuerten Oszillator bereitzustellen, mit dem sich ein breitbandiger Frequenzbereich und ein geringes Phasenrauschen auf einfache Weise realisieren lassen.The invention has for its object to provide a voltage-controlled oscillator with which a broadband frequency range and a low phase noise can be realized in a simple manner.
Zur Lösung dieser Aufgabe wird bei einem spannungsgesteuerten Oszillator mit den eingangs genannten Merkmalen vorgeschla¬ gen, daß das Einstellelement ein kondensatorgestütztes mikro- elektromechanisches System aufweist.To solve this object is gen at a voltage controlled oscillator having the features mentioned pre schla ¬ that the adjusting element comprises a capacitor-based micro-electro-mechanical system.
Unter einem mikro-elektromechanischen System, im folgenden MEMS genannt, wird die Integration von mechanischen Elementen, Sensoren, Stellgliedern und elektronischen Bauteilen auf einem gemeinsamen, in der Regel aus Silizium bestehenden Substrat durch die Anwendung von Mikrofertigungsverfahren ver- standen. Die elektronischen Komponenten werden dabei zumeist durch Halbleitertechnologien, wie etwa CMOS-, Bipolar- oder BICMOS-Verfahren, gefertigt, wohingegen die mikro-mechani- schen Komponenten durch Mikrobearbeitungsverfahren, wie zum Beispiel dem bereichsweisen Atzen des Siliziumtragers zum Entfernen oder Hinzufugen struktureller und funktioneller Schichten, erzeugt werden. MEMS stellen demnach Systeme dar, die n den unterschiedlichsten Bereichen Anwendung finden können .A micro-electromechanical system, hereinafter referred to as MEMS, is understood to mean the integration of mechanical elements, sensors, actuators and electronic components on a common substrate, usually made of silicon, through the use of microfabrication processes. The electronic components are mostly made by semiconductor technologies, such as CMOS, bipolar or BICMOS process, whereas the micro-mechanical components are produced by micromachining processes, such as, for example, the area-based etching of the silicon carrier to remove or add structural and functional layers. Accordingly, MEMS are systems that can be used in a wide variety of areas.
Ein sich die Funktionsweise eines Kondensators zu eigen machendes mikro-elektromechanisches System im Sinne der vorlie- genden Erfindung, im folgenden MEMS-C genannt, ist ein elektrisch gesteuertes Bauteil, das durch eine mechanische Änderung der Geometrie die Kapazität zwischen seinen Anschlüssen ändert. Ein MEMS-C selbst ist bekannt, so daß m Hinsicht auf Aufbau und Wirkungsweise des MEMS-C auf den Stand der Technik verwiesen wird.A micro-electromechanical system which is made to work as a capacitor in the sense of the present invention, hereinafter referred to as MEMS-C, is an electrically controlled component which changes the capacitance between its connections by a mechanical change in the geometry. A MEMS-C itself is known, so that reference is made to the state of the art with regard to the structure and mode of operation of the MEMS-C.
Durch das erfmdungsgemäße Vorsehen eines solchen MEMS-C als Bestandteil des Einstellelements eines spannungsgesteuerten Oszillators, der einen breitbandigen Frequenzbereich und ein geringes Phasenrauschen ermöglicht, laßt sich der Aufbau ei- nes Oszillators m erheblichem Maße vereinfachen und damit eine kosteng nstige Fertigung sicherstellen. Da bei dem MEMS- C darüber hinaus das RF-Signal und der Gleichstromanschluß voneinander getrennt sind, haben Nichtlmeaπtaten der Kapa- zitats-Spannungs-Kurve keine schädlichen Auswirkungen auf die Wirksamkeit des Phasenrauschens. Überdies besitzt das MEMS-C einen besseren Quality-Faktor als herkömmliche Varaktordioden. So betragt der Quality-Faktor des MEMS-C bei 1,5 GHz mehr als 100 im Vergleich zu etwa 40 einer Varaktordiode mit der Folge, daß im Unterschied zu der Verwendung von Varaktor- dioden keine aufwendige Gestaltungen m Hinsicht auf ein gefordertes Phasenrauschen erforderlich sind. Nicht zuletzt verfugt das MEMS-C über einen breiten Abstimmbereich, bei- spielsweise von 0,5 pF bis 10,0 pF oder mehr, wodurch sich auf einfache Weise ein breitbandiger spannungsgesteuerter Os¬ zillator realisieren laßt, und zwar ohne den Q-Faktor m bestimmten Wertebereichen zu reduzieren.Providing such a MEMS-C according to the invention as a component of the setting element of a voltage-controlled oscillator, which enables a broadband frequency range and a low phase noise, makes it possible to considerably simplify the construction of an oscillator and thus to ensure cost-effective production. In addition, since the RF signal and the DC connection are separated from one another in the MEMS-C, non-elements of the capacitance-voltage curve have no harmful effects on the effectiveness of the phase noise. In addition, the MEMS-C has a better quality factor than conventional varactor diodes. The quality factor of the MEMS-C at 1.5 GHz is more than 100 compared to about 40 of a varactor diode, with the result that, in contrast to the use of varactor diodes, no complex designs are required with regard to the required phase noise , Last but not least, the MEMS-C has a wide tuning range, including game from 0.5 pF to 10.0 pF or more, resulting in a simple manner, a broadband voltage controlled Os ¬ zillator let realize, without the Q factor m certain ranges of values to be reduced.
Vorteilhafte Ausgestaltungen eines solchen spannungsgesteuerten Oszillators stellen die Gegenstande der Unteranspruche dar. Dabei ist es besonders gunstig, wenn das Einstellelement zusatzlich mit einer Varaktordiode versehen ist, um den unterschiedlichsten Anforderungen, die m der Praxis an span- nungsgesteuerte Oszillatoren gestellt werden, Rechnung zu tragen. Die Anforderungen die an spannungsgesteuerte Oszillatoren, die wie vorliegend breitbandig abstimmbar sind, gestellt werden, rühren m erster Linie daher, daß solche Oszillatoren eine große Abstimmsteilheit aufweisen. Für eine Feinabstimmung oder Phasenmodulation ist es daher zweckmäßig, ein weiteres Einstell- beziehungsweise Abstimmelement mit geringerer Abstimmsteilheit parallel zu schalten. Dieses Abstimmelement kann zum Beispiel ein weiteres MEMS-C oder - wie zuvor beschrieben - eine Kapazitatsdiode sein. Letzteres hat den zusatzlichen Vorteil, daß Kapazitatsdioden für kleine Ab- stimmsteilheiten eine große Gute besitzen.Advantageous embodiments of such a voltage-controlled oscillator are the subject matter of the subclaims. It is particularly advantageous if the adjusting element is additionally provided with a varactor diode in order to take into account the most varied requirements which are placed on voltage-controlled oscillators in practice. The requirements that are placed on voltage-controlled oscillators, which, as in the present case, can be broadband tuned, stem primarily from the fact that such oscillators have a high tuning steepness. For fine tuning or phase modulation, it is therefore expedient to connect a further setting or tuning element with a lower tuning steepness in parallel. This tuning element can be, for example, another MEMS-C or - as described above - a capacitance diode. The latter has the additional advantage that capacitance diodes have a large good for small tuning steepnesses.
Darüber hinaus kann es außerdem zweckmäßig sein, das Einstellelement mit einem mikro-elektromechanischen System- Schalter, MEMS-Schalter, zu versehen, der sich die Vorteile der MEMS-Technologie zu nutze macht, um etwa den induktiven Teil des Schwingkreises gezielt andern zu können.In addition, it can also be expedient to provide the adjusting element with a micro-electromechanical system switch, MEMS switch, which takes advantage of the advantages of MEMS technology, for example in order to be able to specifically change the inductive part of the resonant circuit.
Schließlich besteht eine nutzbringende Weiterbildung darin, den spannungsgesteuerten Oszillator als Hochleistungsoszilla- tor auszugestalten. Auf diese Weise laßt sich ein Oszillator mit geringem Rauschen auch im RF- oder Mikrowellen-Frequenzbereich realisieren. Ursächlich hierfür ist, daß das Rauschen des Oszillators vom Trager entfernt hauptsächlich durch die Güte des Resonators bestimmt wird. Um einen großen Signal - Rauschsockelabstand zu erhalten, ist es daher sinnvoll, eine hohe Oszillatorleistung zu verwenden. Im Schwingkreis wird danach ein sehr hoher Leistungspegel gespeichert, der einen hohen Abstand zum Grundrauschen gewährt. Aufgrund der hohen Leistung ist es erforderlich, daß die einzelnen Bauteile des Schwingkreises geeignet sind, Hochspannungsschwingungen auszuführen. Aufgrund der nicht linearen Kapazitäts-Spannungs- Kurve und der Diodencharakteristik einer Kapazitätsdiode wird die Nutzleistung des Oszillators reduziert. Die elektrische Charakteristik des MEMS-C hingegen verändert sich durch die HochspannungsSchwingungen nicht.Finally, a useful further development consists in designing the voltage-controlled oscillator as a high-performance oscillator. In this way, an oscillator with low noise can also be implemented in the RF or microwave frequency range. The reason for this is that the noise of the oscillator away from the carrier mainly through the Quality of the resonator is determined. In order to obtain a large signal-to-noise ratio, it makes sense to use a high oscillator power. A very high power level is then stored in the resonant circuit, which ensures a high distance from the background noise. Because of the high power, it is necessary that the individual components of the resonant circuit are suitable for carrying out high-voltage vibrations. Due to the non-linear capacitance-voltage curve and the diode characteristic of a capacitance diode, the useful power of the oscillator is reduced. The electrical characteristics of the MEMS-C, however, do not change due to the high-voltage vibrations.
Einzelheiten und weitere Vorteile des Gegenstandes der vorliegenden Erfindung ergeben sich aus der nachfolgenden Be- Schreibung bevorzugter Ausführungsbeispiele. In den zugehörigen Zeichnungen veranschaulichen im einzelnen:Details and further advantages of the subject matter of the present invention result from the following description of preferred exemplary embodiments. The accompanying drawings illustrate in detail:
Fig. la ein schematisches Schaltbild eines bekannten spannungsgesteuerten Oszillators mit einem Paar Varaktordioden, die sich in einer Kathode-Kathode-Anordnung befinden;Fig. La is a schematic diagram of a known voltage controlled oscillator with a pair of varactor diodes, which are located in a cathode-cathode arrangement;
Fig. 1b ein schematisches Schaltbild eines bekannten spannungsgesteuerten Oszillators mit durch Schalter angesteuertem Kondensator und Resonator;1b shows a schematic circuit diagram of a known voltage-controlled oscillator with a capacitor and resonator controlled by switches;
Fig. lc ein schematisches Schaltbild eines bekannten span- nungsgesteuerten Oszillators mit parallel geschalteten Varaktordioden;1c shows a schematic circuit diagram of a known voltage-controlled oscillator with varactor diodes connected in parallel;
Fig. 2 ein schematisches Schaltbild eines erfindungsgemäßen spannungsgesteuerten Oszillators mit einem MEMS-C;2 shows a schematic circuit diagram of a voltage-controlled oscillator according to the invention with a MEMS-C;
Fig. 3 ein schematisches Schaltbild des Oszillators gemäß Fig. 2 mit einer zusätzlichen Varaktordiode undFig. 3 is a schematic diagram of the oscillator of FIG. 2 with an additional varactor diode and
Fig. 4 ein schematisches Schaltbild des Oszillators gemäß Fig. 3 mit einem zusätzlichen MEMS-Schalter. In den Fig. la bis 1c sind Ausfuhrungsformen bekannter spannungsgesteuerter Oszillatoren dargestellt. Der Oszillator gemäß Fig. la weist einen Schwingkreis auf, der aus einem Kondensator 1 und einem als Induktivität 2 ausgebildeten Resona- tor, die parallel geschaltet und mit Masse verbunden sind, besteht. Um den Schwingkreis abzustimmen, ist ein Einstellelement vorgesehen, das sich aus einem an eine Gleichspan¬ nungsquelle 3 von zum Beispiel - 0,5 V oder - 8,0 V angeschlossenen Paar Varaktordioden 4 zusammensetzt. Die Varak- tordioden 4 befinden sich m einer zu dem Kondensator 1 und der Induktivität 2 parallel geschalteten Kathode-Kathode- Anordnung, die gleichfalls mit Masse verbunden ist, so daß bei der oben angegebenen Spannung eine negative Abstimmspan- nung im Resonatorzweig anliegt. Anstelle direkt an der Gleichspannungsquelle 3 angeschlossen zu sein, können die Varaktordioden 4 alternativ auch über weitere elektronische Bauteile, wie etwa regelbare Widerstände oder weitere Kondensatoren, m an sich bekannter Weise an die Gleichspannungsquelle 3 angeschlossen werden, um ein gewünschtes Abstim- mungsverhalten zu erreichen.FIG. 4 shows a schematic circuit diagram of the oscillator according to FIG. 3 with an additional MEMS switch. La to 1c embodiments of known voltage-controlled oscillators are shown. The oscillator according to FIG. 1 a has an oscillating circuit which consists of a capacitor 1 and a resonator designed as an inductor 2, which are connected in parallel and connected to ground. In order to tune the resonant circuit, an adjusting member is provided which extends from a voltage source to a DC clamping ¬ 3 of, for example, - 8.0 V composed connected pair of varactor diodes 4 to 0.5 V or more. The varactor diodes 4 are located in a cathode-cathode arrangement which is connected in parallel with the capacitor 1 and the inductor 2 and is likewise connected to ground, so that a negative tuning voltage is present in the resonator branch at the voltage specified above. Instead of being connected directly to the DC voltage source 3, the varactor diodes 4 can alternatively also be connected to the DC voltage source 3 in a manner known per se via further electronic components, such as adjustable resistors or further capacitors, in order to achieve a desired tuning behavior.
Neben dem so gebildeten abstimmbaren Schwingkreis weist der spannungsgesteuerte Oszillator, im folgenden auch VCO genannt, noch einen m den Zeichnungen nur angedeuteten restlichen Teil 5 auf, der weitere, für die Funktionsweise des VCO erforderliche elektronische Bauteile m an sich bekannter Weise enthalt.In addition to the tunable resonant circuit formed in this way, the voltage-controlled oscillator, also referred to below as the VCO, also has a remaining part 5, which is only indicated in the drawings and contains other electronic components required for the functioning of the VCO in a manner known per se.
Der spannungsgesteuerte Oszillator gemäß Fig. lb unterscheidet sich von dem gemäß Fig. la hauptsächlich darin, daß ein zusätzlicher Kondensator 1 vorgesehen ist und sowohl die Kon- densatoren 1 als auch die Induktivität 2 über Schalter 6a beziehungsweise 6b ansteuerbar sind. Die Induktivität 2 weist zu diesem Zweck eine Anzapfung auf, die durch den Schalter 6b mit Masse verbindbar ist. Im Vergleich hierzu weist der spannungsgesteuerte Oszillator gemäß Fig. 1c drei Paare an Varaktordioden 4 auf, die sich jeweils in einer Kathode-Kathode- Anordnung befinden und zu dem Kondensator 1 und der Indukti- vität 2 parallel geschaltet sind.The voltage-controlled oscillator according to FIG. 1b differs from that according to FIG. La mainly in that an additional capacitor 1 is provided and both the capacitors 1 and the inductor 2 can be controlled via switches 6a and 6b. For this purpose, the inductor 2 has a tap which is switched on by the switch 6b is connectable to ground. In comparison to this, the voltage-controlled oscillator according to FIG. 1c has three pairs of varactor diodes 4, which are each in a cathode-cathode arrangement and are connected in parallel with the capacitor 1 and the inductor 2.
In den Fig. 2 bis 4 sind verschiedene Ausführungsformen eines spannungsgesteuerten Oszillators dargestellt, bei denen das Einstellelement ein an sich bekanntes, kondensatorgestütztes mikro-elektromechanisches System 7, MEMS-C, aufweist. Bei den Oszillatoren gemäß Fig. 2 und 3 übernimmt das MEMS-C 7 dabei zugleich die Funktion des Kondensators 1 des VCO gemäß den Fig. la bis 1c.2 to 4 show various embodiments of a voltage-controlled oscillator, in which the setting element has a capacitor-supported micro-electromechanical system 7, MEMS-C, which is known per se. In the oscillators according to FIGS. 2 and 3, the MEMS-C 7 also takes over the function of the capacitor 1 of the VCO according to FIGS. 1 a to 1 c.
In der Ausführungsform gemäß Fig. 2 ist das MEMS-C 7 einerseits mit der Gleichspannungsquelle 3 und andererseits mit Masse verbunden sowie parallel zu dem als Induktivität 2 ausgebildeten Resonator geschaltet. Als Resonator können dabei auch als Leistungsresonator oder MEMS-Resonator ausgebildete Resonatoren Anwendung finden. Die gleichfalls mit Masse verbundene Induktivität 2 weist eine Anzapfung auf, die durch den Schalter 6b ebenfalls mit Masse verbindbar ist. In derIn the embodiment according to FIG. 2, the MEMS-C 7 is connected on the one hand to the DC voltage source 3 and on the other hand to ground and is connected in parallel to the resonator designed as an inductor 2. Resonators designed as power resonators or MEMS resonators can also be used as resonators. The inductor 2, which is also connected to ground, has a tap which can also be connected to ground by the switch 6b. In the
Ausführungsform gemäß Fig. 3 ist die Induktivität 2 mit zwei Anzapfungen versehen, die jeweils über Schalter 6b mit Masse verbindbar sind. Darüber hinaus ist bei diesem VCO zwischen dem MEMS-C 7 und der Induktivität 2 ein Paar sich in Kathode- Kathode-Anordnung befindende Varaktordioden 4 parallel geschaltet, die mit einer zweiten Gleichspannungsquelle 3 verbunden sind.3, the inductor 2 is provided with two taps, each of which can be connected to ground via switch 6b. In addition, in this VCO, a pair of varactor diodes 4, which are connected in a cathode-cathode arrangement, are connected in parallel between the MEMS-C 7 and the inductor 2 and are connected to a second DC voltage source 3.
Bei dem spannungsgesteuerten Oszillator gemäß Fig. 4 ist durch einen mikro-elektromechanischen System-Schalter 8, MEMS-Schalter, ein Leitungsabschnitt zwischen dem MEMS-C 7 und der Induktivität 2 über einen ersten Kondensator 1 mit Masse verbindbar. Durch den MEMS-Schalter ist es danach mog- lieh, den induktiven Teil des Schwingkreises gezielt zu ändern. Weiterhin sind die in Reihe befindlichen MEMS-C 7 und Induktivität 2 parallel zu einem zweiten Kondensator 1 und einer Varaktordiode 4 geschaltet und über einen dritten Kon- densator 1 mit dem restlichen Teil 5 des VCO verbunden. Das MEMS-C 7 ist bei dieser Ausführungsform an eine erste Gleichspannungsquelle 3 angeschlossen, wohingegen sowohl die Varaktordiode 4 und der zweite Kondensator 1 als auch die Induktivität 2 mit einer zweiten Gleichspannungsquelle 3 verbunden sind.4, a line section between the MEMS-C 7 and the inductor 2 can be connected to ground via a first capacitor 1 by means of a micro-electromechanical system switch 8, MEMS switch. The MEMS switch makes it possible lent to specifically change the inductive part of the resonant circuit. Furthermore, the MEMS-C 7 and inductor 2 located in series are connected in parallel to a second capacitor 1 and a varactor diode 4 and connected to the remaining part 5 of the VCO via a third capacitor 1. In this embodiment, the MEMS-C 7 is connected to a first DC voltage source 3, whereas both the varactor diode 4 and the second capacitor 1 and the inductor 2 are connected to a second DC voltage source 3.
Mit den zuvor beschriebenen Ausführungsformen spannungsgesteuerter Oszillatoren gemäß den Fig. 2 bis 4 lassen sich im Unterschied zu den bekannten VCOs nach den Fig. la bis 1c ein breitbandiger Frequenzbereich und ein geringes Phasenrauschen auf einfache Weise realisieren. Grund hierfür ist das Vorsehen des MEMS-C 7 als Einstellelement, wodurch sich eine unkomplizierte Gestaltung des VCO ergibt. Da das MEMS-C 7 zudem einen hohen Q-Faktor und einen breiten Abstimmbereich aufweist, läßt sich ein zielgerichtetes Design des breitbandigen und ein geringes Phasenrauschen sicherstellenden VCO verwirklichen. Wie geschildert, kann das MEMS-C je nach Anwendungsfall auch mit einer herkömmlichen Varaktordiode und einem Schalter, wie etwa dem oben beschriebenen MEMS-Schalter, kombiniert werden. Nicht zuletzt ist es danach möglich, eine Os- zillator-Topologie zu erzielen, welche die Funktion bekannter Oszillatoren, wie etwa Colpitts-Oszillatoren, aufweist, aber in Hinsicht auf ihre Gestaltung erheblich vereinfacht ist. With the previously described embodiments of voltage-controlled oscillators according to FIGS. 2 to 4, in contrast to the known VCOs according to FIGS. 1 a to 1 c, a broadband frequency range and low phase noise can be implemented in a simple manner. The reason for this is the provision of the MEMS-C 7 as an adjustment element, which results in an uncomplicated design of the VCO. Since the MEMS-C 7 also has a high Q factor and a wide tuning range, a targeted design of the broadband and low phase noise ensuring VCO can be realized. As described, the MEMS-C can also be combined with a conventional varactor diode and a switch, such as the MEMS switch described above, depending on the application. Last but not least, it is then possible to achieve an oscillator topology which has the function of known oscillators, such as Colpitts oscillators, but is considerably simplified in terms of its design.

Claims

Patentansprüche claims
1. Spannungsgesteuerter Oszillator, insbesondere für Mobilfunkgeräte, mit einem durch elektronische Bauteile gebildeten Schwingkreis, der durch ein Einstellelement ab- stimmbar ist, d a d u r c h g e k e n n z e i c h n e t , daß das Einstellelement ein kondensatorgestütztes mikro-elektro- mechanisches System (7) aufweist.1. Voltage-controlled oscillator, in particular for mobile radio devices, with an oscillating circuit formed by electronic components, which can be tuned by an adjusting element, so that the adjusting element has a capacitor-supported micro-electro-mechanical system (7).
2. Spannungsgesteuerter Oszillator nach Anspruch 1, d a d u r c h g e k e n n z e i c h n e t , daß die elektronischen Bauteile wenigstens einen Kondensator (1) und/oder eine Induktivität (2) aufweisen.2. Voltage-controlled oscillator according to claim 1, d a d u r c h g e k e n n z e i c h n e t that the electronic components have at least one capacitor (1) and / or an inductor (2).
3. Spannungsgesteuerter Oszillator nach Anspruch 2, d a d u r c h g e k e n n z e i c h n e t , daß die Induktivität (2) mit zumindest einer Anzapfung versehen ist, die durch einen Schalter (6b) mit Masse verbindbar ist .3. Voltage-controlled oscillator according to claim 2, d a d u r c h g e k e n n z e i c h n e t that the inductor (2) is provided with at least one tap which can be connected to ground by a switch (6b).
4. Spannungsgesteuerter Oszillator nach einem der Ansprüche 1 bis 3, d a d u r c h g e k e n n z e i c h n e t , daß das Einstellelement mit wenigstens einer Varaktordiode (4) versehen ist.4. Voltage-controlled oscillator according to one of claims 1 to 3, d a d u r c h g e k e n z e i c h n e t that the adjusting element is provided with at least one varactor diode (4).
5. Spannungsgesteuerter Oszillator nach Anspruch 4, d a d u r c h g e k e n n z e i c h n e t , daß zwei Varaktordioden (4) in einer Kathode-Kathode- Anordnung geschaltet sind.5. Voltage-controlled oscillator according to claim 4, d a d u r c h g e k e n n z e i c h n e t that two varactor diodes (4) are connected in a cathode-cathode arrangement.
6. Spannungsgesteuerter Oszillator nach einem der Ansprüche 1 bis 5, d a d u r c h g e e n n z e i c h n e t , daß das Einstellelement mit einem mikro-elektromechanischen System-Schalter (8) versehen ist. 6. Voltage-controlled oscillator according to one of claims 1 to 5, characterized in that the adjusting element is provided with a micro-electromechanical system switch (8).
7. Spannungsgesteuerter Oszillator nach Anspruch 6, d a d u r c h g e k e n n z e i c h n e t , daß durch den mikro-elektromechanischen System-Schalter (8) ein Leitungsabschnitt zwischen dem kondensatorgestützten mikro-elektromechanischen System (7) und der Induktivität (2) mit Masse verbindbar ist.7. Voltage-controlled oscillator according to claim 6, d a d u r c h g e k e n n z e i c h n e t that by the micro-electromechanical system switch (8) a line section between the capacitor-based micro-electromechanical system (7) and the inductor (2) can be connected to ground.
8. Spannungsgesteuerter Oszillator nach einem der Ansprüche 1 bis 7, g e k e n n z e i c h n e t d u r c h die Ausgestaltung als Hochleistungsoszillator. 8. Voltage-controlled oscillator according to one of claims 1 to 7, g e k e n n z e i c h n e t d u r c h the design as a high-performance oscillator.
PCT/DE2001/003611 2000-10-26 2001-09-19 Voltage-controlled oscillator, especially for mobile radiotelephone devices WO2002035699A1 (en)

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