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WO2002029893A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
WO2002029893A1
WO2002029893A1 PCT/JP2000/006859 JP0006859W WO0229893A1 WO 2002029893 A1 WO2002029893 A1 WO 2002029893A1 JP 0006859 W JP0006859 W JP 0006859W WO 0229893 A1 WO0229893 A1 WO 0229893A1
Authority
WO
WIPO (PCT)
Prior art keywords
power source
operating power
circuit
threshold voltage
logic threshold
Prior art date
Application number
PCT/JP2000/006859
Other languages
French (fr)
Japanese (ja)
Inventor
Kouichi Ashiga
Takaaki Noda
Katsuhiro Masujima
Original Assignee
Hitachi, Ltd
Hitachi Device Engeneering Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd, Hitachi Device Engeneering Co., Ltd. filed Critical Hitachi, Ltd
Priority to JP2002533375A priority Critical patent/JPWO2002029893A1/en
Priority to AU2000274531A priority patent/AU2000274531A1/en
Priority to PCT/JP2000/006859 priority patent/WO2002029893A1/en
Publication of WO2002029893A1 publication Critical patent/WO2002029893A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A semiconductor device (1) has a plurality of circuit blocks (BLK1 BLK8) having different operating power source voltages and a common logic threshold voltage in a semiconductor chip (1A). Each circuit block operates with an operating power source voltage which is equal to the potential difference between a low potential level and a high potential level, outputs a signal the amplitude center of which is the logic threshold voltage and corresponds to its operating power source voltage, and receives a signal the amplitude center of which is the logic threshold voltage different from that of the output signal. Even if the operating power source voltage of each built-in circuit block is determined as desired depending on its operating frequency, or each built-in circuit block is programmably switched depending on the operating mode, each circuit block can interface a signal the amplitude center of which is a logic threshold voltage common to the other circuit blocks and corresponds to the operating power source voltage, and therefore any additional circuit such as a level converting circuit is not necessary.
PCT/JP2000/006859 2000-10-03 2000-10-03 Semiconductor device WO2002029893A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002533375A JPWO2002029893A1 (en) 2000-10-03 2000-10-03 Semiconductor device
AU2000274531A AU2000274531A1 (en) 2000-10-03 2000-10-03 Semiconductor device
PCT/JP2000/006859 WO2002029893A1 (en) 2000-10-03 2000-10-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/006859 WO2002029893A1 (en) 2000-10-03 2000-10-03 Semiconductor device

Publications (1)

Publication Number Publication Date
WO2002029893A1 true WO2002029893A1 (en) 2002-04-11

Family

ID=11736554

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/006859 WO2002029893A1 (en) 2000-10-03 2000-10-03 Semiconductor device

Country Status (3)

Country Link
JP (1) JPWO2002029893A1 (en)
AU (1) AU2000274531A1 (en)
WO (1) WO2002029893A1 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005269516A (en) * 2004-03-22 2005-09-29 Denso Corp Integrated circuit device
JP2007180085A (en) * 2005-12-27 2007-07-12 Seiko Epson Corp Integrated circuit device
JP2007184678A (en) * 2006-01-04 2007-07-19 Fujitsu Ltd Semiconductor integrated circuit device
JP2008004848A (en) * 2006-06-23 2008-01-10 Ricoh Co Ltd Trimming method of semiconductor device
US7498750B2 (en) 2004-06-21 2009-03-03 Koninklijke Philips Electronics N.V. Gas discharge lamp driving circuit and method with resonating sweep voltage
JP2009510617A (en) * 2005-09-28 2009-03-12 インテル コーポレイション Power supply and power management for multi-core processors
US7612604B2 (en) 2002-05-07 2009-11-03 Hitachi, Ltd. Semiconductor integrated circuit device
JP2013527941A (en) * 2009-12-14 2013-07-04 ザ・ボーイング・カンパニー System and method for controlling devices operating within different voltage ranges
WO2012122221A3 (en) * 2011-03-10 2013-07-04 Microchip Technology Incorporated Using low voltage regulator to supply power to a source-biased power domain

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299624A (en) * 1992-04-23 1993-11-12 Mitsubishi Electric Corp Semiconductor integrated circuit device
US5289425A (en) * 1991-04-18 1994-02-22 Hitachi, Ltd. Semiconductor integrated circuit device
US5583457A (en) * 1992-04-14 1996-12-10 Hitachi, Ltd. Semiconductor integrated circuit device having power reduction mechanism
EP0843247A2 (en) * 1996-11-19 1998-05-20 Nec Corporation Regulator built-in semiconductor integrated circuit
JPH10209380A (en) * 1997-01-23 1998-08-07 Kawasaki Steel Corp Semiconductor integrated circuit
JPH10228339A (en) * 1997-02-13 1998-08-25 Canon Inc Power supply management device
US5847432A (en) * 1995-01-11 1998-12-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and production method therefor
WO1999034445A1 (en) * 1997-12-26 1999-07-08 Hitachi, Ltd. Semiconductor integrated circuit
JPH11250661A (en) * 1998-12-25 1999-09-17 Hitachi Ltd Semiconductor device
US6060905A (en) * 1996-02-07 2000-05-09 International Business Machines Corporation Variable voltage, variable impedance CMOS off-chip driver and receiver interface and circuits
JP2000164805A (en) * 1998-11-25 2000-06-16 Fujitsu Ltd Internal voltage forming circuit

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289425A (en) * 1991-04-18 1994-02-22 Hitachi, Ltd. Semiconductor integrated circuit device
US5583457A (en) * 1992-04-14 1996-12-10 Hitachi, Ltd. Semiconductor integrated circuit device having power reduction mechanism
JPH05299624A (en) * 1992-04-23 1993-11-12 Mitsubishi Electric Corp Semiconductor integrated circuit device
US5847432A (en) * 1995-01-11 1998-12-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and production method therefor
US6060905A (en) * 1996-02-07 2000-05-09 International Business Machines Corporation Variable voltage, variable impedance CMOS off-chip driver and receiver interface and circuits
EP0843247A2 (en) * 1996-11-19 1998-05-20 Nec Corporation Regulator built-in semiconductor integrated circuit
JPH10209380A (en) * 1997-01-23 1998-08-07 Kawasaki Steel Corp Semiconductor integrated circuit
JPH10228339A (en) * 1997-02-13 1998-08-25 Canon Inc Power supply management device
WO1999034445A1 (en) * 1997-12-26 1999-07-08 Hitachi, Ltd. Semiconductor integrated circuit
JP2000164805A (en) * 1998-11-25 2000-06-16 Fujitsu Ltd Internal voltage forming circuit
JPH11250661A (en) * 1998-12-25 1999-09-17 Hitachi Ltd Semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7612604B2 (en) 2002-05-07 2009-11-03 Hitachi, Ltd. Semiconductor integrated circuit device
JP2005269516A (en) * 2004-03-22 2005-09-29 Denso Corp Integrated circuit device
JP4576862B2 (en) * 2004-03-22 2010-11-10 株式会社デンソー Integrated circuit device
US7498750B2 (en) 2004-06-21 2009-03-03 Koninklijke Philips Electronics N.V. Gas discharge lamp driving circuit and method with resonating sweep voltage
JP2009510617A (en) * 2005-09-28 2009-03-12 インテル コーポレイション Power supply and power management for multi-core processors
JP2007180085A (en) * 2005-12-27 2007-07-12 Seiko Epson Corp Integrated circuit device
JP2007184678A (en) * 2006-01-04 2007-07-19 Fujitsu Ltd Semiconductor integrated circuit device
JP2008004848A (en) * 2006-06-23 2008-01-10 Ricoh Co Ltd Trimming method of semiconductor device
JP2013527941A (en) * 2009-12-14 2013-07-04 ザ・ボーイング・カンパニー System and method for controlling devices operating within different voltage ranges
WO2012122221A3 (en) * 2011-03-10 2013-07-04 Microchip Technology Incorporated Using low voltage regulator to supply power to a source-biased power domain
US8970190B2 (en) 2011-03-10 2015-03-03 Microchip Technology Incorporated Using low voltage regulator to supply power to a source-biased power domain

Also Published As

Publication number Publication date
JPWO2002029893A1 (en) 2004-02-19
AU2000274531A1 (en) 2002-04-15

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